U.S. patent application number 14/691336 was filed with the patent office on 2016-09-15 for stacked damascene structures for microelectronic devices.
The applicant listed for this patent is Jinseok Kim, Ki-Don LEE. Invention is credited to Jinseok Kim, Ki-Don LEE.
Application Number | 20160268199 14/691336 |
Document ID | / |
Family ID | 56739938 |
Filed Date | 2016-09-15 |
United States Patent
Application |
20160268199 |
Kind Code |
A1 |
LEE; Ki-Don ; et
al. |
September 15, 2016 |
STACKED DAMASCENE STRUCTURES FOR MICROELECTRONIC DEVICES
Abstract
A microelectronic device includes a dual-damascene interconnect
structure and a single-damascene line structure directly on the
dual-damascene interconnect structure. The dual-damascene
interconnect structure and the single-damascene line structure may
each include multiple line segments that are arranged in a brick
wall pattern. The brick wall pattern may also be used with two or
more single-damascene line structures. Various microelectronic
devices and related fabrication methods are described.
Inventors: |
LEE; Ki-Don; (Austin,
TX) ; Kim; Jinseok; (Bucheon-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
LEE; Ki-Don
Kim; Jinseok |
Austin
Bucheon-si |
TX |
US
KR |
|
|
Family ID: |
56739938 |
Appl. No.: |
14/691336 |
Filed: |
April 20, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62131523 |
Mar 11, 2015 |
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 23/5226 20130101;
H01L 21/76838 20130101; H01L 23/528 20130101; H01L 23/5283
20130101; H01L 23/58 20130101; H01L 23/53238 20130101 |
International
Class: |
H01L 23/528 20060101
H01L023/528; H01L 23/532 20060101 H01L023/532; H01L 23/58 20060101
H01L023/58; H01L 23/522 20060101 H01L023/522 |
Claims
1. A microelectronic device comprising: a microelectronic
substrate; a dual-damascene interconnect structure on the
microelectronic substrate, the dual-damascene interconnect
structure comprising a conductive via and a first conductive line
directly on the conductive via opposite the microelectronic
substrate; and a single-damascene line structure directly on the
dual-damascene interconnect structure, the single-damascene line
structure comprising a second conductive line on the first
conductive line opposite the conductive via.
2. The microelectronic device of claim 1: wherein the
dual-damascene interconnect structure further comprises a first
barrier layer that extends on a bottom surface of the conductive
via, on a sidewall of the conductive via, on a bottom surface of
the first conductive line outside the conductive via and on a
sidewall of the first conductive line, and wherein the
single-damascene line structure further comprises a second barrier
layer that extends between a top surface of the first conductive
line and a bottom surface of the second conductive line and on a
sidewall of the second conductive line.
3. The microelectronic device of claim 2 wherein the first barrier
layer does not extend between the conductive via and the first
conductive line.
4. The microelectronic device of claim 1: wherein the
dual-damascene interconnect structure further comprises a first
intermetal dielectric layer on the microelectronic substrate,
wherein the first conductive line and the conductive via extend
into the first intermetal dielectric layer, and wherein the
single-damascene line structure further comprises: a second
intermetal dielectric layer on the first intermetal dielectric
layer opposite the substrate, wherein the second conductive line
extends into the second intermetal dielectric layer; and a capping
layer between the first and second intermetal dielectric
layers.
5. The microelectronic device of claim 2: wherein the
dual-damascene interconnect structure further comprises a first
intermetal dielectric layer on the microelectronic substrate,
wherein the first conductive line, the conductive via and the first
barrier layer extend into the first intermetal dielectric layer,
and wherein the single-damascene line structure further comprises:
a second intermetal dielectric layer on the first intermetal
dielectric layer opposite the substrate, wherein the second
conductive line extends into the second intermetal dielectric
layer; and a capping layer between the first and second intermetal
dielectric layers, the capping layer being coplanar with a portion
of the second barrier layer that extends between the top surface of
the first conductive line and the bottom surface of the second
conductive line and electrically connecting the first and second
conductive lines.
6. The microelectronic device of claim 1 wherein a top surface of
the first conductive line is congruent to a bottom surface of the
second conductive line.
7. The microelectronic device of claim 1: wherein the first
conductive line comprises a plurality of first conductive line
segments including at least one first gap therebetween, wherein the
second conductive line comprises a plurality of second conductive
line segments including at least one second gap therebetween, and
wherein the at least one first gap is laterally offset from the at
least one second gap.
8. The microelectronic device of claim 7, wherein the first
conductive line segments, the second conductive line segments and
the first and second gaps are arranged in a brick wall pattern so
as not to fail by electromigration effects.
9. The microelectronic device of claim 7: wherein the
dual-damascene interconnect structure further comprises a first
barrier layer that extends on a bottom surface of the conductive
via, on a sidewall of the conductive via, on bottom surfaces of the
first conductive line segments outside the conductive via and on
sidewalls of the first conductive line segments, and wherein the
single-damascene line structure further comprises a second barrier
layer that extends between top surfaces of the first conductive
line segments and bottom surfaces of the second conductive line
segments and on sidewalls of the second conductive line
segments.
10. The microelectronic device of claim 1 wherein the first and
second conductive lines are sufficiently short so as to not fail by
electromigration effects.
11. The microelectronic device of claim 1 wherein the
single-damascene line structure is a first single-damascene line
structure, the microelectronic device further comprising: a second
single-damascene line structure directly on the first
single-damascene line structure opposite the dual-damascene
interconnect structure, the second single-damascene line structure
comprising a third conductive line on the second conductive line
opposite the first conductive line.
12. A microelectronic device comprising: a microelectronic
substrate; a first conductive line on the microelectronic
substrate, the first conductive line comprising a plurality of
first conductive line segments including at least one first gap
therebetween; and a second conductive line directly on the first
conductive line opposite the microelectronic substrate, the second
conductive line comprising a plurality of second conductive line
segments including at least one second gap therebetween; wherein
the at least one first gap is laterally offset from the at least
one second gap.
13. The microelectronic device of claim 12 wherein the first and
second conductive lines are damascene conductive lines.
14. The microelectronic device of claim 12 wherein each of the
first and second conductive line segments is sufficiently short so
as to not fail by electromigration effects.
15. The microelectronic device of claim 12: wherein the first
conductive line comprises a first barrier layer that extends on
bottom surfaces of the first conductive line segments and on
sidewalls of the first conductive line segments, and wherein the
second conductive line comprises a second barrier layer that
extends on bottom surfaces of the second conductive line segments
and on sidewalls of the second conductive line segments.
16. The microelectronic device of claim 12 further comprising: a
first intermetal dielectric layer on the microelectronic substrate,
wherein the first conductive line segments extend into the first
intermetal dielectric layer; a second intermetal dielectric layer
on the first intermetal dielectric layer opposite the substrate,
wherein the second conductive line segments extend into the second
intermetal dielectric layer; and a capping layer between the first
and second intermetal dielectric layers.
17. The microelectronic device of claim 15 further comprising: a
first intermetal dielectric layer on the microelectronic substrate,
wherein the first conductive line segments extend into the first
intermetal dielectric layer; a second intermetal dielectric layer
on the first intermetal dielectric layer opposite the substrate,
wherein the second conductive line segments extend into the second
intermetal dielectric layer; and a capping layer between the first
and second intermetal dielectric layers, the capping layer being
coplanar with the second barrier layer that extends on bottom
surfaces of the second conductive line segments and electrically
connecting the first and second conductive lines.
18. A microelectronic device comprising: a damascene structure; and
a single-damascene line structure directly on the damascene
structure, wherein the damascene structure and the single-damascene
line structure each comprise a plurality of line segments that are
arranged in a brick wall pattern.
19. (canceled)
20. The microelectronic device of claim 18 wherein the damascene
structure comprises a dual-damascene interconnect structure or a
single-damascene line structure.
21. (canceled)
Description
CLAIM OF PRIORITY
[0001] This application claims the benefit of U.S. Provisional
Application No. 62/131,523, filed Mar. 11, 2015, entitled Brick
Pattern of Stacked Layers to Maximize Short Length EM and Yield,
the disclosure of which is hereby incorporated herein by reference
in its entirety as if set forth fully herein.
FIELD
[0002] The present inventive concepts generally relate to
microelectronic devices and, more particularly, to wiring
structures for microelectronic devices.
BACKGROUND
[0003] Microelectronic devices, such as integrated circuit devices,
are widely used in consumer, commercial and other applications. A
microelectronic device generally includes a substrate, such as a
semiconductor substrate, that includes therein/thereon a large
number of active devices, such as transistors, and passive devices,
such as resistors and capacitors. A wiring structure on the
substrate is used to selectively electrically connect the active
and/or passive devices to form circuits.
[0004] As the integration density of microelectronic devices
continues to increase, and the performance of microelectronic
devices continues to increase, the active and passive devices and
the wiring structure may continue to scale down. Such scaling down
may increase the number of interconnections in the wiring
structure, which may produce more defects and/or decrease the
production yield of the microelectronic device. Scaling down of the
wiring structure may also increase the resistance thereof, which
can decrease performance. Scaling down of the wiring structure may
also increase the aspect ratios thereof, which may increase the
difficulty of the fabrication process and thereby reduce the yield
and/or reliability of the microelectronic devices. Finally, scaling
down of the wiring structure may produce a smaller cross-section
thereof, and increased performance requirements may cause the
wiring structure to operate at higher frequencies, which may
increase electromigration issues.
[0005] Wiring structures of microelectronic devices often are
fabricated using a damascene process in which an underlying
insulating layer is patterned with open trenches and/or vias where
a conductor will be formed. A thick metal layer (e.g., copper) that
significantly overfills the trenches and vias is deposited on the
insulating layer, and Chemical-Mechanical Planarization (CMP) is
used to remove the metal that extends above the top of the
insulating layer. Metal sunken within the insulating layer is not
removed, and becomes the patterned conductor. Single-damascene
processes generally form and fill a single feature, such as a
trench or via, with metal. Dual-damascene processes generally form
and fill two features with metal at once. For example, a via and a
trench overlying the via may both be filled with a single metal
deposition using dual damascene.
SUMMARY
[0006] Various embodiments described herein may provide
microelectronic devices that comprise a damascene structure and a
single-damascene line structure directly on the damascene
structure. In some embodiments, the damascene structure comprises a
dual-damascene interconnect structure or a single-damascene line
structure. In some embodiments, the damascene structure and the
single-damascene line structure each comprise a plurality of line
segments that are arranged in a brick wall pattern. The brick wall
pattern may also be used with two or more single-damascene line
structures.
[0007] More specifically, a microelectronic device according to
various embodiments described herein may comprise a microelectronic
substrate, a dual-damascene interconnect structure on the
microelectronic substrate and a single-damascene line structure
directly on the dual-damascene interconnect structure. The
dual-damascene interconnect structure may comprise a conductive via
and a first conductive line directly on the conductive via opposite
the microelectronic substrate. The single-damascene line structure
may comprise a second conductive line on the first conductive line
opposite the conductive structure.
[0008] In some embodiments, the dual-damascene interconnect
structure further comprises a first barrier layer that extends on a
bottom surface of the conductive via, on a sidewall of the
conductive via, on a bottom surface of the first conductive line
outside the conductive via and on a sidewall of the first
conductive line. Moreover, the single-damascene line structure may
further comprise a second barrier layer that extends between a top
surface of the first conductive line and a bottom surface of the
second conductive line and on a sidewall of the second conductive
line. In some embodiments, the first barrier layer does not extend
between the conductive via and the first conductive line.
[0009] In other embodiments, the dual-damascene interconnect
structure further comprises a first intermetal dielectric layer on
the microelectronic substrate, wherein the first conductive line
and the conductive via extend into the first intermetal dielectric
layer. Moreover, the single-damascene structure may further
comprise a second intermetal dielectric layer on the first
intermetal dielectric layer opposite the substrate, wherein the
second conductive line extends into the second intermetal
dielectric layer, and a capping layer between the first and second
intermetal dielectric layers.
[0010] In yet other embodiments, the dual-damascene interconnect
structure further comprises a first intermetal dielectric layer on
the microelectronic substrate, wherein the first conductive line,
the conductive via and the first barrier layer extend into the
first intermetal dielectric layer. Moreover, the single-damascene
line structure further comprises a second intermetal dielectric
layer on the first intermetal dielectric layer opposite the
substrate, wherein the second conductive line extends into the
second intermetal dielectric layer, and a capping layer between the
first and second intermetal dielectric layers, the capping layer
being coplanar with a portion of the second barrier layer that
extends between the top surface of the first conductive line and
the bottom surface of the second conductive line and electrically
connecting the first and second conductive lines.
[0011] In some embodiments, a top surface of the first conductive
line is congruent to a bottom surface of the second conductive
line.
[0012] Moreover, in some embodiments, the first conductive line
segments, the second conductive line segments and the first and
second gaps are arranged in a brick wall pattern so as not to fail
by electromigration effects.
[0013] In some embodiments, the first conductive line comprises a
plurality of first conductive line segments including at least one
first gap therebetween. The second conductive line comprises a
plurality of second conductive line segments including at least one
second gap therebetween. Moreover, the at least one first gap is
laterally offset from the at least one second gap. In some
embodiments, each of the first and second conductive line segments
is sufficiently short so as to not fail by electromigration
effects.
[0014] Moreover, in some embodiments, the dual-damascene
interconnect structure further comprises a first barrier layer that
extends on a bottom surface of the conductive via, on a sidewall of
the conductive via, on bottom surfaces of the first conductive line
segments outside the conductive via and on sidewalls of the first
conductive line segments. Moreover, the single-damascene line
structure further comprises a second barrier layer that extends
between top surfaces of the first conductive line segments and
bottom surfaces of the second conductive line segments and on
sidewalls of the second conductive line segments.
[0015] In some embodiments the single-damascene line structure is a
first single-damascene line structure and the microelectronic
device further comprises a second single-damascene line structure
directly on the first single-damascene line structure opposite the
dual-damascene interconnect structure, the second single-damascene
line structure comprising a third conductive line on the second
conductive line opposite the first conductive line.
[0016] A microelectronic device according to yet other embodiments
described herein comprises a microelectronic substrate, a first
conductive line on the microelectronic substrate and a second
conductive line directly on the first conductive line opposite the
microelectronic substrate. The first conductive line comprises a
plurality of first conductive line segments including at least one
first gap therebetween. The second conductive line comprises a
plurality of second conductive line segments, including at least
one second gap therebetween. The at least one first gap is
laterally offset from the at least one second gap.
[0017] In some embodiments, the first and second conductive lines
are damascene conductive lines.
[0018] In some embodiments, each of the first and second conductive
line segments is sufficiently short so as not to fail by
electromigration effects.
[0019] Moreover, in some embodiments, the first conductive line
comprises a first barrier layer that extends on bottom surfaces of
the first conductive line segments and on sidewalls of the first
conductive line segments. The second conductive line comprises a
second barrier layer that extends on bottom surfaces of the second
conductive line segments and on sidewalls of the second conductive
line segments.
[0020] Some embodiments further comprise a first intermetal
dielectric layer on the microelectronic substrate, a second
intermetal dielectric layer on the first intermetal dielectric
opposite the substrate and a capping layer between the first and
second intermetal dielectric layers. The first conductive line
segments extend into the first intermetal dielectric layer and the
second conductive line segments extend into the second intermetal
dielectric layer.
[0021] Other embodiments further comprise a first intermetal
dielectric layer on the microelectronic substrate, wherein the
first conductive line segments extend into the first intermetal
dielectric layer. A second intermetal dielectric layer is provided
on the first intermetal dielectric layer opposite the substrate,
wherein the second conductive line segments extend into the second
intermetal dielectric layer. A capping layer is provided between
the first and second intermetal dielectric layers, the capping
layer being coplanar with the second barrier layer that extends on
bottom surfaces of the second conductive line segments and
electrically connecting the first and second conductive lines.
[0022] Methods of fabricating a microelectronic device are also
provided according to various embodiments described herein. These
methods comprise etching a via and a first trench that are
connected to one another, in a first dielectric layer on a
microelectronic substrate; lining a bottom surface and a sidewall
of the via and a bottom surface and a sidewall of the first trench
with a first barrier layer; forming a unitary metal via and first
line on the first barrier layer that lines the bottom surface and
sidewall of the via and the bottom surface and sidewall of the
first trench; etching a second trench in a second dielectric layer
that is on the first dielectric layer, the second trench exposing
at least a portion of a top surface of the first line; lining the
at least a portion of the top surface of the first line and a
sidewall of the second trench with a second barrier layer; and
forming a second line on the second barrier layer that lines the at
least a portion of the top surface of the first line and the
sidewall of the second trench.
[0023] The various other microelectronic devices described above
may also be fabricated using analogous fabrication methods.
[0024] Other methods and devices according to various embodiments
described herein will be or become apparent to one with skill in
the art upon review of the following drawings and detailed
description. It is intended that all such additional methods and
devices be included within this description, be within the scope of
the present inventive concepts, and be protected by the
accompanying claims. Moreover, it is intended that all embodiments
disclosed herein can be implemented separately or combined in any
way and/or combination.
BRIEF DESCRIPTION OF THE DRAWINGS
[0025] FIG. 1 is a schematic cross-sectional diagram illustrating a
microelectronic device according to various embodiments described
herein.
[0026] FIGS. 2A-2D are a top view, a cross-sectional view along the
line 2B of FIG. 2A, a cross-sectional view along line 2C of FIG.
2A, and a cross-sectional view along the line 20 of FIG. 2A,
respectively, of a stacked damascene structure according to various
embodiments described herein.
[0027] FIGS. 3A-3D are a top view, a cross-sectional view along the
line 3B of FIG. 3A, a cross-sectional view along the line 3C of
FIG. 3A, and a cross-sectional view along the line 3D of FIG. 3A,
respectively, of a conventional dual-damascene structure that does
not have a single-damascene structure stacked thereon.
[0028] FIG. 4 is a schematic cross-sectional view of
microelectronic devices according to yet other embodiments
described herein.
[0029] FIG. 5A graphically illustrates normalized electromigration
lifetime vs. line length in microns for various current
densities.
[0030] FIG. 5B is a schematic cross-sectional view of a short line
length dual-damascene line that corresponds to the dashed circle 5B
of FIG. 5A.
[0031] FIG. 5C is a schematic cross-sectional view of a long line
length dual-damascene line that corresponds to the dashed circle 5C
of FIG. 5A.
[0032] FIG. 5D is a schematic cross-sectional view of a long line
that comprises short length line segments according to various
embodiments described herein that corresponds to the dashed circle
5D of FIG. 5A.
[0033] FIG. 6 is a cross-sectional view illustrating a
microelectronic device including stacked damascene structures
according to various embodiments described herein.
[0034] FIG. 7 is a cross-sectional view illustrating a
microelectronic device including stacked damascene line segment
structures according to various embodiments described herein.
[0035] FIG. 8 is a cross-sectional view illustrating a
microelectronic device including stacked damascene line segment
structures according to yet other embodiments described herein.
[0036] FIG. 9 is a cross-sectional view of a microelectronic device
including a second single-damascene line structure on a first
single-damascene line structure according to various embodiments
described herein.
[0037] FIGS. 10A-10F are cross-sectional views illustrating methods
of fabricating microelectronic devices and devices so fabricated
according to various embodiments described herein.
[0038] FIGS. 11A-11F are cross-sectional views illustrating methods
of fabricating microelectronic devices and devices so fabricated
according to various other embodiments described herein.
[0039] FIG. 12 is a schematic block diagram of a system including a
microelectronic device according to various embodiments described
herein.
[0040] FIG. 13 is a perspective view illustrating a mobile phone
that may include the system of FIG. 12.
DETAILED DESCRIPTION
[0041] Various embodiments described herein can provide
microelectronic devices that include a dual-damascene interconnect
structure and a single-damascene line structure directly on the
dual-damascene interconnect structure. By stacking a
single-damascene line structure directly on a dual-damascene
interconnect structure, the line redundancy can be increased, to
thereby allow improved yields, notwithstanding scaling down of the
wiring structures. Moreover, lower resistance may be provided that
can at least partially offset the increased resistance that may be
caused by scaling down. Lower aspect ratios may also be used, to
thereby allow increased yield and reliability of devices,
notwithstanding scaling down.
[0042] Moreover, in some embodiments, the dual-damascene
interconnect structure and the single-damascene line structure may
each comprise a plurality of line segments that are arranged in a
brick wall pattern. This can provide improved electromigration
performance, by providing short-length interconnects, and can also
reduce or eliminate the need for metal capping, copper alloying
and/or microstructure control in order to reduce weaker
electromigration performance and higher electromigration demand
that is produced by scaling down. The electromigration challenges
in scaling down of wiring are described, for example, in the
International Technology Roadmap for Semiconductors (ITRS) 2011
Edition Interconnect at Page 20.
[0043] FIG. 1 is a schematic cross-sectional diagram illustrating a
microelectronic device according to various embodiments described
herein. Referring now to FIG. 1, the microelectronic device
includes a microelectronic substrate MS which may comprise a bulk,
single element and/or compound semiconductor substrate and/or a
single element and/or compound semiconductor layer or layers on a
semiconductor or non-semiconductor substrate. Various other first
conductive, insulating and/or semiconductor layers 01 may be
provided on the microelectronic substrate MS. The microelectronic
substrate MS and/or the first other layers 01 can include active
and/or passive microelectronic devices therein and/or thereon.
[0044] A wiring structure W is provided on the microelectronic
substrate MS, either directly or on the first other layers 01. The
wiring structure W includes a dual-damascene interconnect structure
D-D, and a single-damascene line structure S-D directly on the
dual-damascene interconnect structure D-D. Both the dual-damascene
interconnect structure D-D and the single-damascene line structure
S-D are embedded in one or more insulating layers I. Both the
single-damascene S-D and dual-damascene D-D structures provide
unitary metal structures which may comprise copper. Additional
layers, such as barrier layers, may be provided in these
structures, as will be described below. Various other second
conductive, insulating and/or semiconductor layers 02 may also be
provided on the wiring structure W.
[0045] FIG. 2A is a top view, FIG. 2B is a cross-sectional view
along the line 2B of FIG. 2A, FIG. 2C is a cross-sectional view
along line 2C of FIG. 2A, and FIG. 2D is a cross-sectional view
along the line 20 of FIG. 2A, of stacked damascene structures
according to various embodiments described herein. Moreover, FIG.
3A is a top view, FIG. 3B is a cross-sectional view along the line
3B, FIG. 3C is a cross-sectional view along the line 3C and FIG. 3D
is a cross-sectional view along the line 3D, of a conventional
dual-damascene structure that does not have a single-damascene
structure stacked thereon.
[0046] As will be described in more detail below, the
single-damascene structure S-D of FIGS. 2A-2D may be fabricated
using the same mask or reticle that was used to fabricate the
trench of the dual-damascene structure D-D of FIGS. 2B-2D. Thus, an
additional mask or reticle may not be needed. Moreover, comparing
FIGS. 2B and 3B, with the stacking of layers for the line
structures, the trench metal resistance can be reduced. Moreover,
with a larger cross-sectional area, resistance may be decreased,
but capacitance may be up, resulting in the same level of
resistive-capacitive (RC) delay in the line structures.
[0047] Also, comparing FIGS. 2C and 20 with FIGS. 3C and 3D, with
stacking of line structures, as the resistance decreases, a high
aspect ratio for the trench process is not needed. Rather, as can
be seen in FIGS. 2C and 2D, relatively low aspect ratios may be
used compared to FIGS. 3C and 3D because multiple lower aspect
ratio layers are used to build up a structure with a high aspect
ratio. Thus, various embodiments described herein can improve yield
and reliability.
[0048] As to defects, the stacking of layers in FIGS. 2A-2D can
provide a defect redundancy compared to the single layer of FIGS.
3A-30, which can reduce the sensitivity to defects, and can improve
yields and reliability. Finally, with stacking, a single-damascene
structure S-D is added on top of the dual-damascene structure D-D,
which can provide a metal capping layer between the
single-damascene structure S-D and the dual-damascene structure
D-D, as will described in detail below. This can improve
electromigration performance. As such, a potentially expensive and
unreliable electro-less metal capping process that may be needed in
future designs may not be needed. Accordingly, stacked damascene
structures of FIGS. 1-2D can provide many potential advantages
relative to a conventional dual-damascene structure of FIGS.
3A-3D.
[0049] FIG. 4 is a schematic cross-sectional view of
microelectronic devices according to yet other embodiments
described herein. Comparing FIG. 1 to FIG. 4, the conductive line
of the dual-damascene D-D structure is divided into a plurality of
conductive line segments LS1 including at least one first gap G1
therebetween. The single-damascene structure S-D is also divided
into a plurality of second conductive line segments LS2 including
at least one second gap G2 therebetween. As shown in FIG. 4,
comparing the D-D and S-D structures, the number of line segments
need not be the same, nor need their lengths nor gap widths be the
same. However, as shown in FIG. 4, the at least one first gap G1 is
laterally offset from the at least one second gap G2. This provides
a "brick wall" pattern of stacked line segments.
[0050] It will also be understood that in FIGS. 1, 2A-2D and 4, the
dual-damascene structure D-D can be a dual-damascene structure
without vias in some embodiments. In other embodiments, the
dual-damascene structure D-D may be replaced by a single-damascene
structure as well.
[0051] Configurations of FIG. 4 can provide improved
electromigration (EM) performance. As is known, electromigration is
a process by which a metal conductor changes shape under the
influence of an electric current flowing through it, and eventually
leads to the breaking of the conductor. The brick wall structure of
FIG. 4 can improve the electromigration resistance of the wiring
structure as will be described in detail in connection with FIGS.
5A-5D.
[0052] Specifically, FIG. 5A graphically illustrates normalized EM
lifetime vs. line length in microns for various current densities.
FIG. 5A is based on standard Blech EM equations. As illustrated in
FIG. 5B, short length dual-damascene lines, for example having
lengths of about 10 .mu.m or less, can have long EM lifetimes.
Thus, according to various embodiments described herein, the first
and second conductive lines of FIGS. 1-2D may be sufficiently short
so as not to fail by electromigration effects. In contrast, as
illustrated in FIG. 5C, long length lines, for example about 100
.mu.m or more, can have short EM lifetimes. However, as illustrated
in FIG. 5D, short length line segments using stacked damascene
structures according to various embodiments described herein, can
provide a long line length, while providing short length line
segments for a long electromigration lifetime.
[0053] Thus, in FIG. 5D, the first damascene layer and the second
damascene layer can be broken into multiple short line segments,
each having a length which may, in some embodiments, be less than
about 5 .mu.m, and the break points or gaps may be staggered,
resulting in a brick wall pattern, also referred to as a "brick
pattern". The current flows from one short line segment to another
short line segment in another layer. It is known that EM improves
significantly with shorter line length, which can allow a 200% to
500% higher current density limit for circuit designs. This is the
well known short length EM effect. With the brick pattern of FIG. 4
and FIG. 5D, a long line (stacked) can be broken into multiple
short line chain structures, without intermediate vias
therebetween. This can increase the current density design limit by
about 200% to about 500% at Direct Current (DC).
[0054] If various embodiments described herein are not used,
designers can replace a long line with serially linked
dual-damascene (line and via) interconnects for short length EM
benefits. But this may require a massive redesign of the
microelectronic device and will also increase the number of vias
which can provide weak points for reliability and yield, in a given
high current path. In contrast, the brick pattern of FIGS. 4 and 5D
can be applied to one or two selected levels to fix EM violations
that are found in the design checker, without the need to massively
revise the entire layout. This can save a lot of design time.
[0055] Moreover, if a brick pattern is not used, designers may need
to widen the interconnects to avoid EM violations. Unfortunately,
however, increasing a line width may also result in a massive
multi-level layout revision. Finally, it is possible to adjust the
RC parameters of the line by changing a ratio of metal and gaps.
For example, in some embodiments, the smaller the gap, the higher
the reliability of the device and the lower the resistance of the
brick wall pattern stacked line.
[0056] Even more specifically, the EM short line effect states that
the shorter the line length, the longer the EM lifetime. Thus,
below a critical length (Lc), the line will not fail by EM over the
expected life of the microelectronic device. Stated differently,
below the critical length, the line will not fail by
electromigration effects. The critical length Lc is inversely
proportional to the current density J. Thus, assume the product of
J and Lc is about 3000 A/cm, which is a generally accepted industry
standard. The Lc is about 30 .mu.m for J=10 mA/.mu.m.sup.2, 15
.mu.m for J=20 mA/.mu.m.sup.2 and 10 .mu.m for J=30 mA/.mu.m.sup.2.
For example, if the current density is 30 mA/.mu.m.sup.2, EM
lifetime follows the leftmost line in the graph of FIG. 5A. A short
length line of FIG. 5B may have a length that is close to Lc, and
may be less than about 30 .mu.m long in some embodiments, less than
about 15 .mu.m long in some embodiments, less than about 10 .mu.m
long in some embodiments, and less than about 5 .mu.m long in other
embodiments. In contrast, a long line, such as illustrated in FIG.
5C, may have a length of between about 100 .mu.m and 1,000 .mu.m,
and may have a short EM lifetime. Thus, by breaking the long line
of FIG. 5C into, for example, 10 .mu.m components in a brick
pattern, as shown in FIG. 5D, the EM lifetime may be 10,000 times
longer. For practical purposes, each of the first and second
conductive line segments is sufficiently short so as not to fail by
electromigration effects.
[0057] FIG. 6 is a cross-sectional view illustrating a
microelectronic device including stacked damascene structures
according to various embodiments described herein. FIG. 6 may be
regarded as a more detailed embodiment of FIG. 1. Referring now to
FIG. 6, the microelectronic device comprises a microelectronic
substrate 10 which may be any of the microelectronic substrates MS
that were described in connection with FIG. 1. For simplicity, any
intervening layers (corresponding to element 01 in FIG. 1) are not
illustrated. A dual-damascene interconnect structure 20 is provided
on the microelectronic substrate 10. The dual-damascene
interconnect structure 20 may provide a more detailed embodiment of
the dual-damascene structure D-D of FIG. 1. The dual-damascene
interconnect structure 20 comprises a conductive via 22 and a first
conductive line 24 directly on the conductive via 22 opposite the
microelectronic substrate 10. The conductive via 22 may have a
height of between several tens of nanometers and several microns in
some embodiments, and may be circular; elliptical, ellipsoidal or
polygonal in cross-section. The first conductive line 24 may be
between several tens of nanometers and several microns in thickness
in some embodiments. The conductive via 22 and first conductive
line 24 provide a unitary metal structure comprising, for example,
copper. A single-damascene line structure 30 is also provided
directly on the dual-damascene interconnect structure 20. The
single-damascene line structure 30 may provide a more detailed
embodiment of the single-damascene structure S-D of FIG. 1. The
single-damascene line structure 30 comprises a second conductive
line 34 on the first conductive line 24 opposite the conductive via
22. The second conductive line 34 may be between several tens of
nanometers and several microns thick in some embodiments and may
also comprise copper.
[0058] Still referring to FIG. 6, in other embodiments, the
dual-damascene interconnect structure 20 further comprises a first
barrier layer 26 that extends on a bottom surface 228 of the
conductive via 22, on a sidewall 22S of the conductive via 22, on a
bottom surface 24B of the first conductive line 24 outside the
conductive via 22 and on a sidewall 24S of the first conductive
line 24. The single-damascene line structure 30 further comprises a
second barrier layer 36 that extends between a top surface 24T of
the first conductive line 24 and a bottom surface 34B of the second
conductive line 34, and on a sidewall 34S of the second conductive
line 34. It will be understood that the conductive via 22, first
conductive line 24 and second conductive line 34 may include one or
more sidewalls depending upon the shape thereof. For example, a
circular, elliptical or ellipsoidal structure may have a single
sidewall, whereas a polygonal structure may have three or more
sidewalls.
[0059] Accordingly, in embodiments of FIG. 6, the conductive via 22
and the first conductive line 24 may be encapsulated by the first
and second barrier layers 26 and 36, respectively. The barrier
layers 26 and 36 may comprise tantalum and/or other conventional
materials that act as a barrier to diffusion of copper into
surrounding materials. The thickness of the barrier layers 26 and
36 may be between a few Angstroms and several tens of nanometers in
some embodiments. Multi-layer barrier layers may also be
provided.
[0060] It should also be noticed that in FIG. 6 the first barrier
layer 26 does not extend between the conductive via 22 and the
first conductive line 24. Stated differently, the conductive via 22
and the first conductive line 24 form a unitary structure
comprising, for example, copper.
[0061] Still referring to FIG. 6, the dual-damascene interconnect
structure 20 may further comprise a first intermetal dielectric
layer 28 on the microelectronic substrate 10, such that the first
conductive line 24 and the conductive via 22 extend into, and in
some embodiments completely through, the first intermetal
dielectric layer 28. The first intermetal dielectric layer may
comprise silicon dioxide and/or other insulating materials,
including multiple sublayers. Moreover, the single-damascene line
structure 30 may further comprise a second intermetal dielectric
layer 38 on the first intermetal dielectric layer 28 opposite the
substrate 10. The second conductive line 34 extends into the second
intermetal dielectric layer 38 and in some embodiments completely
through the second intermetal dielectric layer 38. The second
intermetal dielectric layer 38 may comprise silicon dioxide and/or
other dielectric materials, including multiple sublayers. A capping
layer 32 is provided between the first and second intermetal
dielectric layers 28 and 38, respectively. The capping layer 32 may
comprise silicon nitride and/or other insulating materials that are
different from the first and second intermetal dielectric layers 28
and 38. Multiple sublayers also may be used.
[0062] In some embodiments, the capping layer 32 is a first capping
layer, and a second capping layer 42 may be provided on the second
intermetal dielectric layer 38 and on the second conductive line 34
opposite the substrate 10. The first and second intermetal
dielectric layers 28 and 38, respectively, may be between several
tens of nanometers and several microns thick in some embodiments.
The first and second capping layers 32 and 42 may be between a few
.ANG.ngstroms and several tens of nanometers thick in some
embodiments.
[0063] Still referring to FIG. 6, the capping layer 32 may be
coplanar with a portion of the second barrier layer 36 that extends
between the top surface 24T of the first conductive line 24 and the
bottom surface 34B of the second conductive line 34 and
electrically connecting the first and second conductive lines 24
and 34.
[0064] Moreover, in some embodiments, the top surface 24T of the
first conductive line 24 is congruent to (i.e., same size and shape
as) the bottom surface 34B of the second conductive line 34. Thus,
in fabrication, the same reticle or mask may be used to fabricate a
trench in the first intermetal dielectric layer 28 and in the
second intermetal dielectric layer 38 for the first conductive line
24 and the second conductive line 34, respectively.
[0065] FIG. 7 is a cross-sectional view of other embodiments
described herein that may correspond to more detailed embodiments
of FIG. 4. In FIG. 7, the first conductive line 24 comprises a
plurality of first conductive line segments 24' including at least
one first gap 25 therebetween. The first gap(s) 25 may be filled by
the first intermetal dielectric layer 28 in some embodiments. The
second conductive line 34 comprises a plurality of second
conductive line segments 34' including at least one second gap 35
therebetween. The second gap(s) 35 may be filled by the second
intermetal dielectric layer 38 in some embodiments. The at least
one first gap 25 is laterally offset from the at least one second
gap 35. In some embodiments, each of the first line segments 24'
and second line segments 34' are the same length, and each of the
gaps 25 and 35 are the same width. However, in other embodiments,
two or more of the first conductive line segments 24' may be of
different length, two or more of the first gaps 25 may be of
different widths, two or more of the second conductive line
segments 34' may be of different lengths and/or two or more of the
second gaps 35 may be of different widths, as long as the first and
second gaps 25 and 35 are laterally offset from one another, so as
to provide a brick wall structure. In some embodiments, each of the
first and second conductive line segments 24' and 34' is
sufficiently short so as not to fail by electromigration effects.
For example, in some embodiments, each of the first and second line
segments 24' and 34' may be less than about 10 .mu.m long.
[0066] Still referring to FIG. 7, in these embodiments, the first
barrier layer 26 also extends on sidewalls of the first conductive
line segments 24', and the second barrier layer 36 also extends on
sidewalls of the second conductive line segments 34'.
[0067] It will also be understood that in FIGS. 6 and 7, the
dual-damascene structure 20 can be a dual-damascene structure
without vias in some embodiments. In other embodiments, the
dual-damascene structure 20 may be replaced by a single-damascene
structure as well.
[0068] In other embodiments, the brick wall structure of FIG. 7 may
be embodied using two conductive lines that are directly on one
another. The two conductive lines may comprise two stacked
single-damascene lines rather than a single-damascene line stacked
on a dual-damascene interconnect, as was illustrated in FIG. 7.
[0069] Specifically, referring to FIG. 8, other embodiments
described herein may include a first conductive line 50 on a
microelectronic substrate 10. The first conductive line 50
comprises a plurality of first conductive line segments 24'
including at least one first gap 25 therebetween. The first gap(s)
25 may be filled by the first intermetal dielectric layer 28 in
some embodiments. A second conductive line 60 is provided directly
on the first conductive line 50 opposite the microelectronic
substrate 10. The second conductive line 60 comprises a plurality
of second conductive line segments 34' including at least one
second gap 35 therebetween. The second gap(s) 35 may be filled by
the second intermetal dielectric layer 38 in some embodiments. The
at least one first gap 25 is laterally offset from the at least one
second gap 35. The first and second conductive line segments 50 and
60 may be configured as was described in connection with FIG. 7. A
first barrier layer 26 and a second barrier layer 36 also may be
provided as was described in connection with FIG. 7. In some
embodiments, the first and second conductive lines 50 and 60 are
single-damascene conductive lines. First and second intermetal
dielectric layers 28 and 38 and a capping layer 32 may also be
provided, as was described in connection with FIG. 7.
[0070] It will also be understood that in all of the embodiments
described in FIGS. 1, 4 and 5-8, a plurality of single-damascene
lines may be stacked upon the dual-damascene line or the lowermost
single-damascene line, to provide three or more conductive line
structures. For example, FIG. 9 illustrates a second
single-damascene line structure 70 on a first single-damascene line
structure 30. A third conductive line 54, a third intermetal
dielectric layer 58 and a third barrier layer 56 are also
illustrated.
[0071] FIGS. 10A-10F are cross-sectional views illustrating methods
of fabricating microelectronic devices according to various
embodiments described herein. The methods of FIGS. 10A-10F can be
used to fabricate microelectronic devices of, for example, FIG.
6.
[0072] Referring to FIG. 10A, a via V and a first trench T1 that
are connected to one another are etched in a first dielectric layer
28 on a microelectronic substrate 10. The via V may be etched prior
to the first trench T1 or after the first trench T1 in a "trench
first dual-damascene process" or a "via first dual-damascene
process". A via-pattern-mask or reticle and a trench-pattern-mask
or reticle are used to etch the via V and the first trench T1.
[0073] Then, referring to FIG. 10B, a bottom surface and a sidewall
of the via V and a bottom surface and a sidewall of the first
trench T1 are lined with a first barrier layer 26. The barrier
layer may be formed, for example by physical vapor deposition of
tantalum. Multi-layer barriers 26 may also be used.
[0074] Then, referring to FIG. 10C, a unitary metal via 22 and
first conductive line 24 are formed on the first barrier layer 26
that lines the bottom surface and sidewall of the via V and the
bottom surface and sidewall of the first trench T1. The unitary
metal via 22 and first conductive line 24 may be fabricated by
depositing a seed copper layer on the barrier layer 26, depositing
a copper layer using electrolytic plating, and chemical-mechanical
polishing to planarize the first conductive line 24.
[0075] Referring now to FIG. 10D, a capping layer 32 is formed and
patterned, and a second dielectric layer 38 is formed and
patterned. It will be understood that the capping layer 32 and the
second intermetal dielectric layer 38 may both be blanket deposited
and then patterned using the same reticle or mask. Moreover, the
reticle or mask that is used to pattern the capping layer 32 and
the second intermetal dielectric layer 38 may be the same as that
which was used to pattern the first trench T1 in FIG. 10A. Thus,
FIG. 10D illustrates etching a second trench T2 in a second
dielectric layer 38 that is on the first dielectric layer 28,
wherein the second trench T2 exposes at least a portion of a top
surface of the first conductive line 24. In some embodiments, the
entire top surface of the first conductive line 24 is exposed.
[0076] Referring to FIG. 10E, the exposed portion of the top
surface of the first conductive line 24, and in some embodiments
the entire top surface of the first conductive line 24, and a
sidewall of the second trench T2, are lined with a second barrier
layer 36.
[0077] Referring to FIG. 10F, a second conductive line 34 is then
formed on the second barrier layer 36 that lines the at least a
portion of the top surface of the first conductive line 24 and a
sidewall of the second trench T2. The second conductive line 34 may
be formed by a seed layer deposition followed by electrolytic
plating of copper and chemical-mechanical polishing to planarize
the second conductive line 34. A second capping layer 42 may then
be added as was illustrated in FIG. 6. It will also be understood
that the operations of FIGS. 10D, 10E and 10F may be repeated to
form a plurality of stacked single-damascene lines as was
illustrated, for example, in FIG. 9.
[0078] FIGS. 11A-11F are cross-sectional views illustrating the
fabrication of a microelectronic device according to various other
embodiments described herein. The operations of FIGS. 11A-11F may
form microelectronic devices as illustrated, for example, in FIG.
7.
[0079] As illustrated in FIG. 11A, a via V and a plurality of first
trenches T1' are etched in a first dielectric layer 28 on a
microelectronic substrate 10. At least one of the first trenches
T1' is connected to the via V. The first trenches T1' may all have
a length that is less than a critical length, as was described
above.
[0080] Referring to FIG. 11B, a first barrier layer 26 is then
formed on the floor and sidewall of the via V, and on the floor and
sidewalls of the first trenches T1'.
[0081] Referring to FIG. 11C, a unitary metal via 22 and a
plurality of first conductive line segments 24' are formed on the
first barrier layer 26. It will be understood that in these
embodiments, only one Of the first conductive line segments 24' may
form a unitary structure with the metal via 22.
[0082] Referring to FIG. 110, a plurality of second trenches T2'
are etched in a second dielectric layer 38 that is on the first
dielectric layer 28. The second trenches T2' expose at least a
portion of top surfaces of the first conductive line segments 24'.
It will be understood that the second trenches T2' are offset from
the first trenches T1' of FIG. 11B. Thus, the plurality of second
trenches T2' may be etched using a different reticle or mask than
was used to etch a plurality of first trenches T1'. In other
embodiments, the same reticle or mask may be used, with a lateral
offset applied.
[0083] Referring to FIG. 11E, bottom surfaces and sidewalls of the
plurality of second trenches T2' are lined with a second barrier
layer 36.
[0084] Referring to FIG. 11F, a plurality of second conductive line
segments 34' are formed on the second barrier layer 36 that lines
the bottom surfaces and the sidewalls of the second trenches T2'.
Additional processing may be performed to obtain the structure of
FIG. 7.
[0085] FIG. 12 is a schematic block diagram of a system including a
microelectronic device according to various embodiments described
herein.
[0086] Referring to FIG. 12, the system 1100 may comprise a
controller 1110, an input/output device 1120, a memory device 1130,
an interface 1140, and a bus 1150. The controller 1110, the
input/output device 1120, the memory device 1130, and the interface
1140 may communicate with each other through the bus 1150. The bus
1150 may correspond to a path over which data can be moved between
system elements.
[0087] The controller 1110 may comprise a microprocessor, a digital
signal processor, a microcontroller and/or a similar device that
can control an operating program. The input/output device 1120 may
comprise a keypad, a keyboard, or a display. The memory device 1130
may not only save code or data for executing the controller 1110
but also save data executed by the controller 1110. The memory
device 1130 and/or other blocks of FIG. 12 may comprise a
microelectronic device, according to any of the embodiments
described herein.
[0088] The system 1100 may be applied to a product that can
transport information, e.g., a PDA (personal digital assistant), a
portable computer, a web tablet, a wireless phone, a mobile phone,
a digital music player and/or a memory card.
[0089] The system 1100 of FIG. 12 may be applied to other various
products. FIG. 13 is a perspective view illustrating a mobile phone
1200 including the system 1100 of FIG. 12. In addition, the system
1100 of FIG. 13 may be applied to a portable notebook, a MP3
player, navigation system, a solid state disk (SSD), a car and/or a
household appliance.
[0090] Embodiments of the inventive concepts have been described
above with reference to the accompanying drawings, in which example
embodiments are shown. The inventive concepts may, however, be
embodied in many different forms and should not be construed as
limited to the embodiments set forth herein. Rather, these
embodiments are provided so that this disclosure will be thorough
and complete, and will fully convey the scope of the inventive
concepts to those skilled in the art. Like numbers refer to like
elements throughout the drawings and specification. As used herein
the expression "and/or" includes any and all combinations of one or
more of the associated listed items.
[0091] The previous description was presented to enable one of
ordinary skill in the art to make and use the inventive concepts
and is provided in the context of a patent application and its
requirements. Various modifications to the embodiments and the
generic principles and features described herein will be readily
apparent. The embodiments are mainly described in terms of
particular methods and devices provided in particular
implementations. However, the methods and devices may operate
effectively in other implementations. The embodiments have been
described with respect to devices having certain elements. However,
the devices may include fewer or additional elements than those
shown, and variations in the arrangement and type of the elements
may be made without departing from the scope of the inventive
concepts. The embodiments have also been described in the context
of particular methods having certain steps or operations. However,
the methods and devices may operate effectively for other methods
having different and/or additional steps/operations and
steps/operations in different orders that are not inconsistent with
the embodiments. Thus, the present inventive concepts are not
intended to be limited to the embodiments shown, but is to be
accorded the widest scope consistent with the principles and
features described herein.
[0092] It will be understood that, although the terms first,
second, etc. may be used herein to describe various elements, these
elements should not be limited by these terms. These terms are only
used to distinguish one element from another. For example, a first
element could be termed a second element, and, similarly, a second
element could be termed a first element, without departing from the
scope of the inventive concepts.
[0093] It will also be understood that when an element is referred
to as being "coupled to" or "connected to" or "on" another element,
it can be directly coupled to, connected to or on the other element
or intervening elements may also be present. In contrast, when an
element is referred to as being "directly coupled to" or "directly
connected to" or "directly on" another element, there are no
intervening elements present. Other words used to describe the
relationship between elements should be interpreted in a like
fashion (i.e., "between" versus "directly between", "adjacent"
versus "directly adjacent", etc.).
[0094] Relative terms such as "below" or "above" or "upper" or
"lower" or "horizontal" or "vertical" may be used herein to
describe a relationship of one element, layer or region to another
element, layer or region as illustrated in the figures. It will be
understood that these terms are intended to encompass different
orientations of the device in addition to the orientation depicted
in the figures. It will also be understood that terms, such as
"top", "bottom" and "sidewall" of an element, layer or region are
described relative to an underlying substrate. Thus, a "bottom" of
an element, layer or region is the surface of the element, layer or
region that is closest to a substrate, a "top" of the element,
layer or region is the surface of the element, layer or region that
is furthest away from the substrate, and a "sidewall" is a surface
that connects the top and bottom of the element, layer or
region.
[0095] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
the invention. As used herein, the singular forms "a", "an" and
"the" are intended to include the plural forms as well, unless the
context clearly indicates otherwise. It will be further understood
that the terms "comprises", "comprising", "includes" and/or
"including" when used in this specification, specify the presence
of stated features, elements, and/or components, but do not
preclude the presence or addition of one or more other features,
elements, components, and/or groups thereof.
[0096] Embodiments of the inventive concepts have been described
above with reference to cross-section illustrations that are
schematic illustrations of idealized embodiments (and intermediate
structures) of the inventive concepts. The thickness of layers and
regions in the drawings may be exaggerated for clarity.
Additionally, variations from the shapes of the illustrations as a
result, for example, of manufacturing techniques and/or tolerances,
are to be expected. Thus, embodiments of the invention should not
be construed as limited to the particular shapes of regions
illustrated herein but are to include deviations in shapes that
result, for example, from manufacturing.
[0097] All embodiments can be combined in any way and/or
combination.
[0098] Unless otherwise defined, all terms (including technical and
scientific terms) used herein have the same meaning as commonly
understood by one of ordinary skill in the art to which this
disclosure belongs. It will be further understood that terms, such
as those defined in commonly used dictionaries, should be
interpreted as having a meaning that is consistent with their
meaning in the context of the relevant art and will not be
interpreted in an idealized or overly formal sense unless expressly
so defined herein.
[0099] Many different embodiments have been disclosed herein, in
connection with the above description and the drawings. It will be
understood that it would be unduly repetitious and obfuscating to
literally describe and illustrate every combination and
subcombination of these embodiments. Accordingly, the present
specification, including the drawings, shall be construed to
constitute a complete written description of all combinations and
subcombinations of the embodiments described herein, and of the
manner and process of making and using them, and shall support
claims to any such combination or subcombination.
[0100] As appreciated by the present inventive entity, devices and
methods of forming devices according to various embodiments
described herein may be embodied in microelectronic devices such as
integrated circuits, wherein a plurality of devices according to
various embodiments described herein are integrated in the same
microelectronic device. Accordingly, the cross-sectional view(s)
illustrated herein may be replicated in two different directions,
which need not be orthogonal, in the microelectronic device. Thus,
a plan view of the microelectronic device that embodies devices
according to various embodiments described herein may include a
plurality of the devices in an array and/or in a two-dimensional
pattern that is based on the functionality of the microelectronic
device.
[0101] The devices according to various embodiments described
herein may be interspersed among other devices depending on the
functionality of the microelectronic device. Moreover, devices
according to various embodiments described herein may be replicated
in a third direction that may be orthogonal to the two different
directions, to provide three-dimensional integrated circuits.
[0102] Accordingly, the cross-sectional view(s) illustrated herein
provide support for a plurality of devices according to various
embodiments described herein that extend along two different
directions in a plan view and/or in three different directions in a
perspective view. For example, when a single via or line is
illustrated in a cross-sectional view of a device/structure, the
device/structure may include a plurality of vias, lines and other
structures thereon, as would be illustrated by a plan view of the
device.
[0103] In the drawings and specification, there have been disclosed
typical embodiments of the inventive concepts and, although
specific terms are employed, they are used in a generic and
descriptive sense only and not for purposes of limitation, the
scope of the inventive concepts being set forth in the following
claims.
* * * * *