U.S. patent application number 15/055783 was filed with the patent office on 2016-09-08 for plasma processing apparatus.
This patent application is currently assigned to TOKYO ELECTRON LIMITED. The applicant listed for this patent is TOKYO ELECTRON LIMITED. Invention is credited to Yuki HOSAKA, Toshiki NAKAJIMA, Mayo UDA, Yoshihiro UMEZAWA.
Application Number | 20160260582 15/055783 |
Document ID | / |
Family ID | 56847326 |
Filed Date | 2016-09-08 |
United States Patent
Application |
20160260582 |
Kind Code |
A1 |
HOSAKA; Yuki ; et
al. |
September 8, 2016 |
PLASMA PROCESSING APPARATUS
Abstract
A baffle structure of a plasma processing apparatus includes a
first member and at least one second member. The first member
includes a cylindrical portion extending between a placement table
and a processing container. A plurality of vertically elongated
through holes are formed in the cylindrical portion to be arranged
in the circumferential direction. The at least one second member is
disposed in the outside of the cylindrical portion of the first
member in the radial direction. The at least one second member is
arranged to form a cylindrical body having an inner diameter larger
than the outer diameter of the cylindrical portion. The vertical
positions of a plurality of second members may be individually
changed. Or, the horizontal position of a single second member may
be changed. Or, the single second member may be made to be
inclined.
Inventors: |
HOSAKA; Yuki; (Miyagi,
JP) ; UMEZAWA; Yoshihiro; (Miyagi, JP) ;
NAKAJIMA; Toshiki; (Miyagi, JP) ; UDA; Mayo;
(Miyagi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TOKYO ELECTRON LIMITED |
Tokyo |
|
JP |
|
|
Assignee: |
TOKYO ELECTRON LIMITED
Tokyo
JP
|
Family ID: |
56847326 |
Appl. No.: |
15/055783 |
Filed: |
February 29, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01J 37/32091 20130101;
C23C 16/4412 20130101; C23C 16/50 20130101; H01J 37/3244 20130101;
H01J 37/32834 20130101; H01J 37/32633 20130101; H01J 37/32009
20130101; C23C 16/455 20130101 |
International
Class: |
H01J 37/32 20060101
H01J037/32; C23C 16/44 20060101 C23C016/44; C23C 16/455 20060101
C23C016/455; C23C 16/50 20060101 C23C016/50 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 5, 2015 |
JP |
2015-043334 |
Claims
1. A plasma processing apparatus for performing a plasma processing
on an object to be processed ("workpiece"), the plasma processing
apparatus comprising: a processing container; a placement table
provided within the processing container and including a placement
region on which the workpiece is placed; a baffle structure
interposed between the placement table and the processing container
at a location below the placement region to define a first space in
which the placement region is disposed and a second space below the
placement region, the baffle structure including: a first member
that includes a cylindrical portion extending between the placement
table and the processing container, a plurality of vertically
elongated through holes being formed to be arranged in a
circumferential direction, and at least one second member disposed
in an outside of the cylindrical portion of the first member in a
radial direction, the second member being configured to be arranged
to form a cylindrical body having an inner diameter larger than an
outer diameter of the cylindrical portion; a gas supply portion
connected to the first space; an exhaust apparatus connected to the
second space; and a driving mechanism configured to: move the at
least one second member in a vertical direction, individually move
a plurality of circumferential areas of the cylindrical body in the
vertical direction, and move the at least one member in the radial
direction, or make the at least one second member inclined with
respect to the vertical direction.
2. The plasma processing apparatus of claim 1, wherein the at least
one second member is a plurality of second members, the plurality
of second members are configured to be arranged in the
circumferential direction to form the cylindrical body, and the
driving mechanism is configured to individually move the plurality
of second members in the vertical direction.
3. The plasma processing apparatus of claim 1, wherein the at least
one second member is a single second member, and the driving
mechanism is configured to move the single second member in the
vertical direction and in the radial direction.
4. The plasma processing apparatus of claim 1, wherein the at least
one second member is a single second member, and the driving
mechanism is configured to move the single second member in the
vertical direction and make the single second member inclined with
respect to the vertical direction.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based on and claims priority from
Japanese Patent Application No. 2015-043334, filed on Mar. 5, 2015,
with the Japan Patent Office, the disclosure of which is
incorporated herein in its entirety by reference.
TECHNICAL FIELD
[0002] An exemplary embodiment of the present disclosure relates to
a plasma processing apparatus.
BACKGROUND
[0003] In manufacturing an electronic device such as, for example,
a semiconductor device or a flat panel display (FPD), a plasma
processing is performed on an object to be processed ("workpiece")
in order to process the workpiece.
[0004] As described in Japanese Patent Laid-Open Publication No.
2001-196313, a plasma processing apparatus used for the plasma
processing generally includes a processing container, a placement
table, a gas supply unit, and an exhaust apparatus. The placement
table places thereon a workpiece such as, for example, a wafer, and
is provided within the processing container. The gas supply unit
supplies a processing gas into the processing container. The
exhaust apparatus is connected to a space within the processing
container. More specifically, an exhaust path, in which a gas
flows, is formed between a side wall of the processing container
and the placement table. The exhaust apparatus exhausts the gas
through the exhaust path.
[0005] In the plasma processing apparatus described in Japanese
Patent Laid-Open Publication No. 2001-196313, the exhaust path
extends circumferentially around the placement table, and hence,
the exhaust apparatus is connected to the exhaust path at a
position deviated from the center of the placement table in the
radial direction. Accordingly, conductance from the exhaust path to
the exhaust apparatus becomes different in the circumferential
direction. As a result, the flow of the gas on the placement table
may become uneven, which may deteriorate in-plane uniformity of the
plasma processing of the workpiece.
SUMMARY
[0006] An aspect of the present disclosure provides a plasma
processing apparatus for performing a plasma processing on a
processing target object. The plasma processing apparatus includes
a processing container, a placement table, a baffle structure, a
gas supply portion, an exhaust apparatus, and a driving mechanism.
The placement table is provided within the processing container.
The placement table includes a placement area on which the
processing target object is placed. The baffle structure is
interposed between the placement table and the processing container
at a location below the placement area to define a first space in
which the placement area is disposed and a second space below the
placement area, within the processing container. The baffle
structure includes a first member and at least one second member.
The first member includes a cylindrical portion that extends
between the placement table and the processing container. A
plurality of vertically elongated through holes are formed in the
cylindrical portion to be arranged in the circumferential
direction. The at least one second member is provided in the
outside of the cylindrical portion of the first member in the
radial direction. The at least one second member is configured to
be able to be arranged to form a cylindrical body that has a larger
inner diameter than the outer diameter of the cylindrical portion.
The gas supply portion is connected to the first space. The exhaust
apparatus is connected to the second space. The driving mechanism
is configured to move the at least one second member in the
vertical direction, individually move a plurality of
circumferential areas of the cylindrical body in the vertical
direction, move the at least one member in a radial direction, or
make the at least one second member inclined with respect to the
vertical direction.
[0007] The foregoing summary is illustrative only and is not
intended to be in any way limiting. In addition to the illustrative
aspects, embodiments, and features described above, further
aspects, embodiments, and features will become apparent by
reference to the drawings and the following detailed
description.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG. 1 is a view schematically illustrating a plasma
processing apparatus according to an exemplary embodiment.
[0009] FIG. 2 is a perspective view schematically illustrating a
first member, a plurality of second members, and a driving
mechanism of a baffle structure in the plasma processing apparatus
according to the exemplary embodiment.
[0010] FIG. 3 is a perspective view schematically illustrating the
first member, the plurality of the second members, and the driving
mechanism of the baffle structure in the plasma processing
apparatus according to the exemplary embodiment.
[0011] FIG. 4 is a plan view illustrating a cylindrical portion of
the first member and body portions of the plurality of the second
members of the baffle structure illustrated in FIGS. 2 and 3 when
they are viewed from the top side thereof.
[0012] FIG. 5 is a view illustrating the baffle structure and the
driving mechanism according to the exemplary embodiment.
[0013] FIG. 6 is a cutaway perspective view illustrating the first
member and the second members of the baffle structure according to
the exemplary embodiment.
[0014] FIG. 7 is a cutaway perspective view illustrating the first
member and the second members of the baffle structure according to
the exemplary embodiment.
[0015] FIG. 8 is a view illustrating an exemplary embodiment of a
control system associated with the baffle structure.
[0016] FIG. 9 is a perspective view schematically illustrating a
first member, a second member, and a driving mechanism of a baffle
structure in a plasma processing apparatus according to another
exemplary embodiment.
[0017] FIG. 10 is a plan view illustrating the first member, the
second member, and the driving mechanism of the baffle structure
illustrated in FIG. 9 when they are viewed from a side portion
thereof.
[0018] FIGS. 11A and 11B are plan views illustrating a cylindrical
portion of the first member and the second member of the baffle
structure illustrated in FIGS. 9 and 10 when they are viewed from
the top side thereof.
[0019] FIG. 12 is a perspective view schematically illustrating a
first member, a second member, and a driving mechanism of a baffle
structure in a plasma processing apparatus according to another
exemplary embodiment.
[0020] FIG. 13 is a plan view illustrating the first member, the
second member, and the driving mechanism of the baffle structure
illustrated in FIG. 12 when they are viewed from a side portion
thereof.
[0021] FIG. 14 is a plan view illustrating the first member, the
second member, and the driving mechanism of the baffle structure
illustrated in FIG. 12 when they are viewed from a side portion
thereof.
[0022] FIG. 15 is a view obtained by partially cutting away the
first member and the second member of the baffle structure
illustrated in FIG. 12.
[0023] FIGS. 16A and 16B are views illustrating an outline of a
simulation and a simulation result.
DETAILED DESCRIPTION
[0024] In the following detailed description, reference is made to
the accompanying drawing, which form a part hereof. The
illustrative embodiments described in the detailed description,
drawing, and claims are not meant to be limiting. Other embodiments
may be utilized, and other changes may be made without departing
from the spirit or scope of the subject matter presented here.
[0025] In a plasma processing apparatus, a distribution of a
pressure on the workplace placed on a placement table affects a
plasma processing of the workpiece. Thus, adjustment of the
distribution of the pressure on the placement table is
demanded.
[0026] The adjustment of the distribution of the pressure on the
placement table is also effective, for example, to suppress the
deterioration of the in-plane uniformity of the plasma processing
that is caused by the uneveness of the gas flow on the placement
table as described above.
[0027] An aspect of the present disclosure provides a plasma
processing apparatus for performing a plasma processing on a
workpiece. The plasma processing apparatus includes a processing
container, a placement table, a baffle structure, a gas supply
portion, an exhaust apparatus, and a driving mechanism. The
placement table is provided within the processing container. The
placement table includes a placement area on which the processing
target object is placed. The baffle structure is interposed between
the placement table and the processing container at a location
below the placement area to define a first space in which the
placement area is disposed and a second space below the placement
area, within the processing container. The baffle structure
includes a first member and at least one second member. The first
member includes a cylindrical portion that extends between the
placement table and the processing container. A plurality of
vertically elongated through holes are formed in the cylindrical
portion to be arranged in the circumferential direction. The at
least one second member is provided in the outside of the
cylindrical portion of the first member in the radial direction.
The at least one second member is configured to be able to be
arranged to form a cylindrical body that has a larger diameter than
a diameter of the cylindrical portion. The gas supply portion is
connected to the first space. The exhaust apparatus is connected to
the second space. The driving mechanism is configured to move the
at least one second member in the vertical direction, individually
move a plurality of circumferential areas of the cylindrical body
in the vertical direction, move the at least one member in the
radial direction, or make the at least one second member inclined
with respect to the vertical direction.
[0028] In the plasma processing apparatus according to the present
exemplary embodiment, the proportion of shielding the plurality of
through holes of the cylindrical portion by the second member with
respect to the second space may be adjusted by adjusting a
positional relationship between the cylindrical portion of the
first member and the cylindrical body formed by the at least one
second member. Accordingly, the conductance between the first space
and the second space may be adjusted, and the pressure of the first
space may be adjusted. Further, the plurality of circumferential
areas of the cylindrical body formed by the at least one second
member are individually moved in the vertical direction, so that
the proportion of shielding each of the plurality of through holes
by the second member may be changed in the circumferential
direction. Alternatively, the at least one second member is moved
in the radial direction so that a radial distance between the
cylindrical portion and the at least one second member may be
changed in the circumferential direction. Alternatively, the at
least one second member is made to be inclined so that the
proportion of shielding each of the plurality of through holes by
the second member with respect to the second space may be changed
in the circumferential direction, and the radial distance between
the cylindrical portion and the at least one second member may be
changed in the circumferential direction. Accordingly, the
conductance between the first space and the second space may be
changed in the circumferential direction. Therefore, the
distribution of the pressure on the placement table may be
adjusted.
[0029] In an exemplary embodiment, the at least one second member
is a plurality of second members, and the plurality of second
members are able to be arranged in the circumferential direction to
form the cylindrical body. In the present exemplary embodiment, the
driving mechanism is configured to individually move the plurality
of second members in the vertical direction.
[0030] In an exemplary embodiment, the at least one second member
is a single second member, and the driving mechanism is configured
to move the single second member in the vertical direction and in
the radial direction.
[0031] In an exemplary embodiment, the at least one second member
is a single second member, and the driving mechanism is configured
to move the single second member in the vertical direction and make
the single second member inclined with respect to the vertical
direction.
[0032] As described above, it is possible to adjust the
distribution of the pressure on the placement table of the plasma
processing apparatus.
[0033] Hereinafter, various exemplary embodiments will be described
with reference to the accompanying drawings. In addition, identical
or corresponding parts in each of the drawings will be denoted by
the same symbols.
[0034] FIG. 1 is a view schematically illustrating a plasma
processing apparatus according to an exemplary embodiment. FIG. 1
schematically represents a vertical sectional structure of the
plasma processing apparatus 10. The plasma processing apparatus 10
illustrated in FIG. 1 is a parallel flat plate type
capacitively-coupled plasma processing apparatus. The plasma
processing apparatus 10 includes a processing container 12. The
processing container 12 has a surface formed of, for example,
anodized aluminum. The processing container 12 has a side wall 12s.
The side wall 12s has a substantially cylindrical shape. A central
axis of the side wall 12s is substantially in line with an axis AX
that extends vertically. An opening 12g is provided in the side
wall 12s to carry in or out a wafer W. The opening 12g is
configured to be opened/closed by a gate valve 52.
[0035] A placement table 14 is provided within the processing
container 12. In an exemplary embodiment, the placement table 14 is
supported by a support unit 16. The support unit 16 is a
substantially cylindrical insulating member and extends upwardly
from a bottom 12b of the processing container 12. In an exemplary
embodiment, the support unit 16 is in contact with the bottom side
peripheral edge of the placement table to support the placement
table 14.
[0036] The placement table 14 includes a lower electrode 18 and an
electrostatic chuck 20. The lower electrode 18 has a substantially
disc shape and is formed of a conductor. A first high frequency
power supply HFS is connected to the lower electrode 18 via a
matcher MU1. The first high frequency power supply HFS mainly
generates a high frequency power for plasma generation, and
generates a high frequency power of a frequency of 27 MHz to 100
MHz (e.g., a high frequency power of 40 MHz). The matcher MU1
includes a circuit to match an output impedance of the first high
frequency power supply HFS and an input impedance of a load side
(the lower electrode 18 side) with each other.
[0037] Further, a second high frequency power supply LFS is
connected to the lower electrode 18 via a matcher MU2. The second
high frequency power supply LFS mainly generates a high frequency
power (a high frequency bias power) for drawing of ions into the
wafer W to supply the high frequency bias power to the lower
electrode 18. The frequency of the high frequency bias power is
within a range of 400 kHz to 13.56 MHz (e.g., 3 MHz). The matcher
MU2 includes a circuit to match an output impedance of the second
high frequency power supply LFS and an input impedance of a load
side (the lower electrode 18 side) with each other.
[0038] The electrostatic chuck 20 is provided on the lower
electrode 18. The electrostatic chuck 20 has a structure in which
an electrode 20a serving as a conductive film is provided between a
pair of insulating layers or insulating sheets. A DC power supply
22 is electrically connected to the electrode 20a via a switch SW.
The top surface of the electrostatic chuck 20 forms a placement
region 20r on which the wafer W as a workpiece is placed. The
center of the placement region 20r may be positioned on the axis
AX. When a DC voltage is applied to the electrode 20a of the
electrostatic chuck 20 from the DC power supply 22, the
electrostatic chuck 20 attracts the wafer W placed on the placement
region 20r by an electrostatic force (e.g., a Coulomb force).
[0039] Further, in the plasma processing apparatus 10, a focus ring
FR is provided to surround the edge of the wafer W. The focus ring
FR may be formed of, for example, silicon or quartz.
[0040] A flow path 18a is formed inside the lower electrode 18. A
coolant, for example, cooling water is supplied to the flow path
18a from an externally provided chiller unit through a pipe 26a.
The coolant supplied to the flow path 18a is returned to the
chiller unit through a pipe 26b. The temperature of the coolant
circulated as described above is controlled so that the temperature
of the wafer W placed on the electrostatic chuck 20 is
controlled.
[0041] A gas supply line 28 is provided in the placement table 14.
The gas supply line 28 supplies a heat transfer gas (e.g., He gas)
from a heat transfer gas supply mechanism to the gap between the
top surface of the electrostatic chuck 20 and the rear surface of
the wafer W.
[0042] The plasma processing apparatus 10 further includes an upper
electrode 30. The upper electrode 30 is disposed above the lower
electrode 18 to face the lower electrode 18. The lower electrode 18
and the upper electrode 30 are provided substantially in parallel
with each other.
[0043] The upper electrode 30 is supported in the ceiling of the
processing container 12 through an insulating shielding member 32.
The upper electrode 30 may include an electrode plate 34 and an
electrode support 36. The electrode plate 34 is in contact with the
space within the processing container 12 and provides a plurality
of gas ejection holes 34a. The electrode plate 34 may be formed of
a low resistance conductor or semiconductor that generates less
Joule heat.
[0044] The electrode support 36 is configured to detachably support
the electrode plate 34 and may be formed of a conductive material
such as, for example, aluminum. The electrode support 36 may have a
water cooling structure. A gas diffusion chamber 36a is provided
inside the electrode support 36. A plurality of gas passing holes
36b extend downwardly from the gas diffusion chamber 36a to
communicate with the gas ejection holes 34a. A gas inlet port 36c
is formed in the electrode support 36 to introduce a processing gas
into the gas diffusion chamber 36a. A gas supply pipe 38 is
connected to the gas inlet port 36c.
[0045] A gas source group 40 is connected to the gas supply pipe 38
via a valve group 42 and a flow rate controller group 44. The gas
source group 40 includes a plurality of gas sources. The plurality
of gas sources are a plurality of gas sources of different gas
species. The valve group 42 has a plurality of valves. The flow
rate controller group 44 includes a plurality of flow rate
controllers such as, for example, mass flow controllers. The
plurality of gas sources of the gas source group 40 are connected
to the gas supply pipe 38 via corresponding valves included in the
valve group 42 and corresponding flow rate controllers included in
the flow rate controller group 44, respectively.
[0046] In the plasma processing apparatus 10, a gas from at least
one gas source selected from the plurality of gas sources of the
gas source group 40 is supplied to the gas supply pipe 38 through
the corresponding flow rate controller and the corresponding valve
of the gas source in a flow rate-controlled state. The gas supplied
to the gas supply pipe 38 reaches the gas diffusion chamber 36a and
is introduced into the space within the processing container 12
through the gas passing holes 36b and the gas ejection holes 34a.
The gas source group 40, the flow rate controller group 44, the
valve group 42, the gas supply pipe 38, and the upper electrode 30
form a gas supply section GS according to an exemplary embodiment.
The gas supply section GS is connected to the first space S1, which
will be described later.
[0047] As illustrated in FIG. 1, an exhaust path VL is formed
between the side wall 12s of the processing container 12 and the
radial outer periphery of the placement table 14. The exhaust path
VL extends annularly in the circumferential direction. An exhaust
pipe 48 is connected to a location right below the exhaust path VL,
i.e., the bottom 12b of the processing container 12. An exhaust
apparatus 50 is connected to the exhaust pipe 48. Accordingly, the
exhaust apparatus 50 is connected to the second space S2, which
will be described later. The exhaust apparatus 50 includes a vacuum
pump such as, for example, a turbo molecular pump. As described
above, in the plasma processing apparatus 10, the exhaust apparatus
50 is connected to the exhaust path VL at a position radially
deviated with respect to the axis AX. Hence, the conductances from
respective circumferential positions in the exhaust path VL to the
exhaust apparatus 50 are different from each other in the
circumferential direction.
[0048] The plasma processing apparatus 10 may further include a
controller Cnt. The controller Cnt is a computer which includes,
for example, a processor, a storage unit, an input device, and a
display device, and controls each of the units of the plasma
processing apparatus 10. In the controller Cnt, an operator may
perform, for example, an input operation of commands by using the
input device in order to manage the plasma processing apparatus 10,
and an operation status of the plasma processing apparatus 10 may
be visualized and displayed by the display device. The storage unit
of the controller Cnt stores a control program to cause a processor
to control various processings performed in the plasma processing
apparatus 10, or a program to cause each of the units of the plasma
processing apparatus 10 to perform a processing according to a
processing condition, i.e., a processing recipe.
[0049] In the plasma processing apparatus 10, a gas is supplied
into the processing container 12 from at least one gas source
selected from the plurality of gas sources of the gas source group
40 in order to process the wafer W. Then, the high frequency power
for plasma generation is applied to the lower electrode 18 so that
a high frequency electric field is generated between the lower
electrode 18 and the upper electrode 30. Plasma of the gas supplied
into the processing container 12 is generated by the high frequency
electric field. Then, a processing of the wafer W, for example,
etching, is performed by the generated plasma. In addition, the
high frequency bias power may be applied to the lower electrode 18
so as to draw ions into the wafer W.
[0050] As illustrated in FIG. 1, the plasma processing apparatus 10
further includes a baffle structure 60. The baffle structure 60 is
interposed between the placement table 14 and the side wall 12s of
the processing container 12 at a location lower than the placement
table 14 to define the first space S1 and the second space S2
within the processing container 12. The first space S1 is a space
where the placement region 20r is disposed, i.e., a space where the
wafer W is placed. The second space S2 is a space that is
positioned below the placement region 20r and closer to the exhaust
apparatus 50 side than the first space S1, i.e., a space that is
downstream from the first space S1. The above-described gas supply
portion GS is connected to the first space S1. The above-described
exhaust apparatus 50 is connected to the second space S2.
[0051] Hereinafter, descriptions will be made with reference to
FIGS. 2 to 7 together with FIG. 1. FIGS. 2 and 3 are perspective
views schematically illustrating the first member, the plurality of
second members, and the driving mechanism of the baffle structure
in the plasma processing apparatus according to the exemplary
embodiment. FIGS. 2 and 3 omit illustration of an upper annular
portion of the first member. Further, FIG. 2 illustrates a state in
which the plurality of second members are placed at an identical
position in the vertical direction. FIG. 3 illustrates a state in
which one of the plurality of second members is at a different
position from the positions of the other second members in the
vertical direction. FIG. 4 is a plan view of the cylindrical
portion of the first member and the body portions of the plurality
of second members of the baffle structure illustrated in FIGS. 2
and 3 when they are viewed from the top side thereof. FIG. 5 is a
view illustrating the baffle structure and the driving mechanism
according to the exemplary embodiment. FIGS. 6 and 7 are cutaway
perspective views illustrating the first member and the second
members of the baffle structure according to the exemplary
embodiment. Each of FIGS. 2 to 7 is a perspective view illustrated
for understanding of descriptions. The illustrated sizes of the
first member and the second members and the illustrated sizes and
number of the through holes formed in the cylindrical portion of
the first member are different from the actual sizes of the first
member and the second members and the actual sizes and number of
the through holes formed in the cylindrical portion of the first
member.
[0052] As illustrated in FIGS. 1 to 6, the baffle structure 60
includes the first member 61 and the plurality of second members
62. In the examples illustrated in, for example, FIG. 2, the baffle
structure 60 includes four second members 62. The second members 62
are arranged circumferentially with respect to the axis AX.
Further, the number of the second members 62 may be an arbitrary
number equal to or more than 2.
[0053] The first member 61 is formed by performing, for example, a
Y.sub.2O.sub.3 coating on a surface of a metal such as, for
example, aluminum or stainless. The first member 61 includes a
cylindrical portion 61a, a lower annular portion 61b, and an upper
annular portion 61c.
[0054] The cylindrical portion 61a has a substantially cylindrical
shape, and the central axis thereof is substantially in line with
the axis AX. The plate thickness of the cylindrical portion 61a is,
for example, 5 mm. The outer diameter (diameter) of the cylindrical
portion 61a is, for example, 550 mm. As illustrated in FIG. 1, the
cylindrical portion 61a extends between the placement table 14 and
the side wall 12s of the processing container 12.
[0055] A plurality of through holes 61h are formed in the
cylindrical portion 61a. The plurality of through holes 61h
penetrate the cylindrical portion 61a in the radial direction with
respect to the axis AX (i.e., in the diametric direction). Each of
the plurality of through holes 61h has a slit shape elongated in
the vertical direction. The plurality of through holes 61h are
arranged circumferentially with respect to the axis AX with
substantially equal pitches, so as to be distributed over the whole
circumference of the cylindrical portion 61a.
[0056] In addition, the width of each of the plurality of through
holes 61h, i.e., the width of each of the plurality of through
holes 61h in a direction orthogonal to the vertical direction may
be, for example, equal to or lower than about 3.5 mm, from the
viewpoint of suppressing leakage of plasma into the second space
S2. Further, the vertical length of each of the plurality of
through holes 61h may be arbitrarily set depending on the
adjustment range of the pressure of the first space S1. The
vertical length of each of the plurality of through holes 61h is,
for example, 30 mm.
[0057] The lower annular portion 61b has an annular shape. The
lower annular portion 61b is connected to the bottom end of the
cylindrical portion 61a and extends inwardly in the radial
direction from the bottom end of the cylindrical portion 61a. The
upper annular portion 61c has an annular shape. The upper annular
portion 61c is continuous to the upper end of the cylindrical
portion 61a and extends outwardly in the radial direction from the
upper end of the cylindrical portion 61a. The first member 61 may
be configured by the cylindrical portion 61a, the lower annular
portion 61b, and the upper annular portion 61c as separate members.
That is, the first member 61 may be a member that has a separable
structure and is fabricated by assembling the cylindrical portion
61a, the lower annular portion 61b, and the upper annular portion
61c with each other. Alternatively, the first member 61 may be an
integrally molded member that includes the cylindrical portion 61a,
the lower annular portion 61b, and the upper annular portion
61c.
[0058] In addition, as illustrated in FIG. 1, the bottom 12b of the
processing container 12 includes a substantially cylindrical
support unit 12m. A tubular member 64 is provided above the support
unit 12m. The tubular member 64 may be formed of an insulator such
as, for example, ceramic. The tubular member 64 extends along the
outer peripheral surface of the support unit 16. Further, an
annular member 66 is provided on the tubular member 64 and the
support unit 16. The annular member 66 may be formed of an
insulator such as, for example, ceramic. The annular member 66
extends along the top surface of the lower electrode 18 up to the
vicinity of the edge of the electrostatic chuck 20. The
above-described focus ring RF is provided on the annular member
66.
[0059] The inner edge of the lower annular portion 61b of the first
member 61 is placed between the support unit 12m and the tubular
member 64. The support unit 12m and the tubular member 64 are fixed
to each other by, for example, screws. As a result, the inner edge
of the lower annular portion 61b of the first member 61 is
sandwiched between the support unit 12m and the tubular member
64.
[0060] The side wall 12s of the processing container 12 includes an
upper portion 12s1 and a lower portion 12s2. The plasma processing
apparatus 10 further includes a support member 68. The support
member 68 includes a substantially annular upper portion 68a and a
substantially annular lower portion 68c. The upper portion 68a and
the lower portion 68c are connected to each other via a
substantially cylindrical middle portion. The upper portion 68a of
the support member 68 is sandwiched between the upper portion 12s1
and the lower portion 12s2 of the side wall 12s. The lower portion
68c of the support member 68 extends inwardly in the radial
direction within the processing container 12. The upper annular
portion 61c of the first member 61 is fixed to the lower portion
68c of the support member 68. The upper annular portion 61c of the
first member 61 is fixed to the lower portion 68c of the support
member 68 by, for example, screws. The support member 68 may be
configured by the upper portion 68a, the middle portion, and the
lower portion 68c as separate members. That is, the support member
68 may be a member that has a separable structure and may be
fabricated by assembling the upper portion 68a, the middle portion,
and the lower portion 68c with each other. Alternatively, the
support member 68 may be an integrally molded member that includes
the upper portion 68a, the middle portion, and the lower portion
68c.
[0061] Each of the plurality of second members 62 may be formed by
performing coating of, for example, Y.sub.2O.sub.3 on a surface of
a metal such as, for example, aluminum or stainless. The plurality
of second members 62 are arranged radially outside the cylindrical
portion 61a. The second members 62 are able to be arranged to form
a cylindrical body that has an inner diameter larger than the outer
diameter of the cylindrical portion 61a.
[0062] The second members 62 include body portions 62a and flange
portions 62b, respectively. The body portions 62a of the plurality
of second members 62 are adapted to form a cylindrical body when
they are arranged at a vertically identical level. That is, each of
the body portions 62a of the plurality of second members 62 has a
curved shape that is formed by dividing the cylindrical body in the
circumferential direction. As illustrated in FIG. 4, each of the
body portions 62a of the plurality of second members 62 includes an
inner curved surface 62a and an outer curved surface 62e that share
the axis AX. The inner curved surface 62i is a surface formed such
that any point within the inner curved surface 62i has a distance
r1 from the axis AX in the direction orthogonal to the axis AX. The
outer curved surface 62e is a surface formed such that any point
within the outer curved surface 62e has a distance r2, which is
larger than the distance r1, from the axis AX in the direction
orthogonal to the axis AX. The distance r1 between the inner curved
surface 62i and the axis AX is larger than the distance r3 between
the outer peripheral surface 61e of the cylindrical portion 61a and
the axis AX. The distance r1.times.2, i.e., the diameter of the
inner peripheral surface of the cylindrical body formed by the body
portions 62a of the plurality of second members 62 is, for example,
550.4 mm. The plate thickness of each of the body portions 62
(i.e., r2-r1) is 5 mm. Accordingly, in an example, a gap of about
0.4 mm may exist between the body portions 62a and the cylindrical
portion 61a.
[0063] In the example represented in FIG. 4, the body portions 62a
of the plurality of second members 62 are formed by dividing the
cylindrical body formed by the body portions 62a of the second
members 62 into four (4) portions at angular intervals of
90.degree. in the circumferential direction (.theta..sub.A
direction) based on the axis YA that extends from the axis AX in
the Y1 direction orthogonal to the vertical direction (the Z
direction). However, the number of the divisions of the cylindrical
body, i.e., the number of the plurality of second members 62 is not
limited to four, and may be an arbitrary number of two (2) or more.
Further, the angular ranges occupied by the plurality of second
members 62, respectively, in the cylindrical body in the O.sub.A
direction may be different from each other.
[0064] The flange portions 62b extend from the lower ends of the
body portions 62, respectively, outwardly in the radial direction
with respect to the axis AX. Each of the plurality of second
members 62 may include a body portion 62a and a flange portion 62b
as separate members. That is, each of the plurality of second
members 62 may be a member that has a separable structure and may
be fabricated by assembling the body portion 62a and the flange
portion 61b. Alternatively, the plurality of second members 62 may
be integrally molded members that include the body portions 62a and
the flange portions 61b, respectively.
[0065] Each of the plurality of second members 62 is configured to
be movable individually in the vertical direction. Specifically, as
illustrated in FIGS. 2, 3 and 5, the flange portions 62b of the
plurality of second members 62 are individually connected to a
plurality of shaft bodies 69 of a driving mechanism DM,
respectively. In an exemplary embodiment, the plurality of shaft
bodies 69 are feed screws and are arranged circumferentially at
substantially equal intervals. The flange portions 62b of the
plurality of second members 62 are connected to the corresponding
shaft bodies 69 thereof via nuts 62n, respectively. Further, the
shaft bodies 69 are connected to their dedicated driving devices
70, respectively. The driving devices 70 are, for example, motors.
The driving devices 70 move the second members 62 up and down along
the shaft bodies 69. Accordingly, the body portions 62a of the
second members 62 are adapted to be moved up and down within the
area that includes the gap between the cylindrical portion 61a of
the first member 61 and the side wall 12s of the processing
container 12. Hereinafter, detailed descriptions will be made on
the driving mechanism DM with reference to one second member 62 as
an example.
[0066] In an exemplary embodiment, as illustrated in FIG. 5, each
shaft body 69 includes a screw portion 69a, a shaft portion 69b, a
connecting unit C1, and a connecting unit C2. The shaft portion 69b
has a substantially cylindrical shape and extends vertically. The
upper end of the shaft portion 69b is placed within the processing
container 12. The lower end of the shaft portion 69b penetrates the
bottom 12b of the processing container 12 to be placed outside the
processing container 12. The lower end of the shaft portion 69b is
connected to a rotation driving shaft 70a of the driving device 70
via the connecting unit C1. A sealing mechanism SL such as, for
example, a magnetic fluid seal is provided between the shaft
portion 69b and the bottom 12b of the processing container 12.
[0067] The upper end of the shaft portion 69b is connected to the
lower end of the screw portion 69a via the connecting unit C2. The
screw portion 69a extends vertically at the upper side of the shaft
portion 69b. The nut 62n is attached to the flange portion 62b of
the second member 62 to be screwed to the screw portion 69a. When
the shaft body 69 is rotationally driven by the driving device 70,
the rotation movement of the shaft body 69 is converted into the
up-and-down movement of the second member 62. Therefore, according
to the driving mechanism DM illustrated in FIG. 5, the second
member 62 may be moved up and down.
[0068] The screw portion 69a, the shaft portion 69b, and the
connecter C2, which form the shaft body 69, and the nut 62n are
provided within the processing container 12. Accordingly, all or
one or more of the screw portion 69a, the shaft portion 69b, the
connecting unit C2, and the nut 62n may be formed of an insulator.
Alternatively, among the components, only the screw portion 69a,
which is placed closest to the first space S1 where plasma is
generated, may be formed of an insulator.
[0069] In the plasma processing apparatus 10, as illustrated in
FIG. 6, when a state is formed in which the plurality of second
members 62 are moved down so that the plurality of through holes
61h do not face the body portions 62a of the plurality of second
members 62, i.e., a state is formed in which the through holes 61h
are not shielded by the body portions 62a (hereinafter, referred to
as an "open state"), the plurality of through holes 61h become in a
state of directly communicating with the second space S2. That is,
the first space S1 becomes in a state of communicating with the
second space S2 only through the plurality of through holes 61h. In
such an open state, the conductance of a gas flow path interposed
between the first space S1 and the second space S2 increases.
Accordingly, the pressure of the first space S1 becomes close to
the pressure of the second space S2 so that the pressure of the
first space S1 may be set to a low pressure.
[0070] Meanwhile, as illustrated in FIG. 7, when the plurality of
second members 62 are moved up so that the body portions 62a of the
plurality of second members 62 face the plurality of through holes
61h, i.e., when the through holes 61h are shielded by the body
portions 62a (hereinafter, referred to as a "shielded state"), the
first space S1 becomes in a state of communicating with the second
space S2 through the gap between the plurality of through holes
61h/the cylindrical portion 61a and the body portions 62. In the
shielded state, the conductance of the gas flow path interposed
between the first space S1 and the second space S2 decreases.
Accordingly, the difference between the pressure of the first space
S1 and the pressure of the second space S2 increases so that the
pressure of the first space S1 may be set to a high pressure.
[0071] As described above, according to the plasma processing
apparatus 10, the proportion of shielding the plurality of through
holes 61h by the body portions 62a with respect to the second space
S2 may be adjusted by adjusting the positional relationship between
the cylindrical portion 61a of the first member 61 and the body
portion 62a of the second member 62 in the vertical direction. As a
result, the conductance between the first space S1 and the second
space S2 may be adjusted.
[0072] In the plasma processing apparatus 10, the conductance
between the first state S1 and the second space 2 in the shielded
state is defined mainly by the conductance of the gap between the
cylindrical portion 61a and the body portions 62a. Accordingly, a
small conductance may be obtained between the first space S1 and
the second space S2 even when the radial length of the gap between
the cylindrical portion 61a of the first member 61 and the body
portions 62a of the second members 62 is a certain length, i.e.,
without requiring strict accuracy for the gap. Meanwhile, in the
open state, a large conductance is obtained between the first space
S1 and the second space S2. Therefore, according to the plasma
processing apparatus 10, the adjustment range of the pressure of
the first space S1 where a wafer W is placed may be increased.
Further, the pressure of the first space S1 may be
increased/decreased at a high speed by moving the plurality of
second members 62 up and down at a high speed.
[0073] As illustrated in FIG. 3, the vertical position of each of
the plurality of the second members 62 is adapted to be adjustable
individually. Accordingly, a circumferentially changing
distribution may be formed in the conductance of the gas flow path
between the first space S1 and the second space S2. As a result,
the distribution of the pressure on the placement region 20r may be
adjusted.
[0074] As described above, in the plasma processing apparatus 10,
the conductance from each circumferential position of the exhaust
path VL to the exhaust apparatus 50 changes in the circumferential
direction. That is, the exhaust path VL of the plasma processing
apparatus 10 has a circumferential distribution of the conductance
that is caused by the biasing of the connection position of the
exhaust apparatus 50. In the plasma processing apparatus 10, the
circumferential distribution of the conductance of the exhaust path
VL may be decreased by forming the circumferential distribution in
the conductance of the gas flow path between the first space S1 and
the second space S2 by adjusting the vertical position of each of
the plurality of second members 62.
[0075] FIG. 8 is a view illustrating an exemplary embodiment of a
control system, which is associated with the baffle structure. As
illustrated in FIG. 8, the driving devices 70 may be controlled by
the controller Cnt. The controller Cnt receives signals from a
displacement gauge 90, a pressure gauge 92, and a pressure gauge
94. The displacement gauge 90 measures a vertical position of each
of the plurality of second members 62 or a distance from a
reference position and transmits a signal representing a result of
the measurement to the controller Cnt. The pressure gauge 92
measures the pressure of the first space S1 and transmits a signal
representing a result of the measurement to the controller Cnt. The
pressure gauge 94 measures the pressure of the second space S2 and
transmits a signal representing a result of the measurement to the
controller Cnt. The controller Cnt receives the pressure of the
first space S1 that is designated by a recipe, the signal that
represents the result of the measurement by the displacement gauge
90, the signal that represents the result of the measurement by the
pressure gauge 92, and the signal that represents the result of the
measurement by the pressure gauge 94, and transmits the signals to
each of the driving devices 70 of the driving mechanism DM. Then,
the controller Cnt controls the vertical positions of the second
members 62 by the driving devices 70, respectively, so as to make
the pressure of the first space S1 become the pressure designated
by the recipe. In addition, the pressure gauge 92 may have a
plurality of sensors that individually measure pressures of a
plurality of circumferential areas of the space on the placement
region 20r, and the controller Cnt may control each of the driving
devices 70 based on signals representing measurement results of the
pressures that are measured by the plurality of sensors, so as to
individually control the vertical positions of the second members
62.
[0076] Hereinafter, descriptions will be made on another exemplary
embodiment of the baffle structure and the driving mechanism of the
baffle structure. FIG. 9 is a perspective view schematically
illustrating a first member, a second member, and a driving
mechanism of a baffle structure in a plasma processing apparatus of
another exemplary embodiment. FIG. 10 is a plan view illustrating
the first member, the second member, and the driving mechanism
illustrated in FIG. 9 when they are viewed from a side portion
thereof Further, FIG. 10 omits illustration of the shaft body 69,
the sealing mechanism SL, and the driving device 70, which are
placed in front of the baffle structure 602.
[0077] The baffle structure 602 and the driving mechanism DM2
illustrated in FIGS. 9 and 10 may be used in place of the baffle
structure 60 and the driving mechanism DM of the above-described
exemplary embodiment.
[0078] The first member 61 of the baffle structure 602 is the same
as the first member 61 of the baffle structure 60. The baffle
structure 602 has a single second member 622. The second member 622
is a cylindrical body that has an inner diameter larger than the
outer diameter of the cylindrical portion 61a and extends in the
vertical direction (i.e., the Z direction) in the outside of the
cylindrical portion 61a in the radial direction. The inner diameter
(diameter) of the second member 622, i.e., r4.times.2 (see, e.g.,
FIGS. 11A and 11B), maybe, for example, 550.4 mm.
[0079] The driving mechanism DM2 is configured by the same
components as those of the driving mechanism DM, and further
includes a support member HS and a horizontal driving unit HD. In
an exemplary embodiment, the support member HS may be an annular
plate that extends circumferentially in the outside of the second
member 622 in the radial direction. Nuts 622n are attached to the
support member HS, and screwed with the screw portions 69a of the
shaft bodies 69, respectively. The nuts 622n protrude inwardly in
the radial direction to support the second member 622. The
horizontal driving unit HD is provided between the support member
HS and the outer peripheral surface of the second member 622. The
horizontal driving unit HD is configured to move the second member
622 in the direction orthogonal to the axis AX, i.e., in the
horizontal direction. In an exemplary embodiment, the horizontal
driving unit HD includes a plurality of piezo elements. The
plurality of piezo elements are arranged in the circumferential
direction between the support member HS and the outer peripheral
surface of the second member 622.
[0080] Hereinafter, descriptions will be made on the operation of
the baffle structure 602 with reference to FIGS. 11A and 11B. FIGS.
11A and 11B are plan views illustrating the cylindrical portion of
the first member and the plurality of second members illustrated in
FIGS. 9 and 10 when they are viewed from the top side thereof. FIG.
11A illustrates a state in which the central axis of the
cylindrical portion 61a of the first member 61 and the central axis
of the second member 622 are placed together on the axis AX. FIG.
11B illustrates a state in which the second member 622 is deviated
by a distance SA in the X2 direction orthogonal to the vertical
direction (the Z direction) so that the central axis of the second
member 622 is placed on an axis AX2 that is spaced apart from the
axis AX in the X2 direction by the distance SA.
[0081] In the baffle structure 602, the second member 622 may be
moved up and down, and the proportion of shielding, by the second
member 622, the plurality of through holes 61h formed in the
cylindrical portion 61a may be adjusted, as in the baffle structure
60. Accordingly, the conductance of the gas flow path between the
first space Si and the second space S2 may be adjusted.
[0082] Further, in the baffle structure 602, by moving the second
member 622 in the horizontal direction by the horizontal driving
unit HD, the second member 622 may be shifted, in the horizontal
direction as illustrated in FIG. 11B, from the state in which the
central axis of the cylindrical portion 61a of the first member 61
and the central axis of the second member 622 are placed together
on the axis AX. By this, the length of the gap between the outer
peripheral surface of the cylindrical portion 61a of the first
member 61 and the inner peripheral surface of the second member 62
may be changed in the circumferential direction (the .theta..sub.B
direction in FIG. 11B).
[0083] For example, in the state illustrated in FIG. 11A, the
radial distance on the axis AX between the outer peripheral surface
of the cylindrical portion 61a of the first member 61 and the inner
peripheral surface of the second member 622 is r4-r3. This distance
is constant in the circumferential direction (the .theta..sub.B
direction). Meanwhile, in the state illustrated in FIG. 11B, the
radial distance on the axis AX between the outer peripheral surface
of the cylindrical portion 61a of the first member 61 and the inner
peripheral surface of the second member 622 changes from a distance
D1 (=r4-43-SH) at one side of the X2 direction (the left side of
FIG. 11B) to a distance D2 (=r4-r3 +SH) at the opposite side of the
X2 direction (the right side of FIG. 11B). The distance D2 becomes
larger than the distance D1. As described above, according to the
baffle structure 602, the length of the gap between the outer
peripheral surface of the cylindrical portion 61a of the first
member 61 and the inner peripheral surface of the second member 62
may be changed. Accordingly, the distribution of the pressure on
the placement region 20r may be adjusted. In FIGS. 11A and 11B, the
X2 direction is the movement direction of the second member 622.
However, the movement direction of the second member 622 may be an
arbitrary direction orthogonal to the vertical direction (the Z
direction). That is, when the movement direction of the second
member 622 is a direction having an angle .theta..sub.B with
respect to an axis YB that extends from the axis AX in the Y2
direction orthogonal to the Z direction, the angle .theta..sub.B
may be an arbitrary angle. Further, the baffle structure 602 and
the driving mechanism DM illustrated in FIG. 9 include the four
shaft bodies 69 and the four driving devices 70. However, the
number of the axis bodies 69 and the driving devices 70 may be an
arbitrary number.
[0084] Hereinafter, descriptions will be made on another exemplary
embodiment of the baffle structure and the driving mechanism of the
baffle structure. FIG. 12 is a perspective view schematically
illustrating a first member, a second member, and a driving
mechanism of a baffle structure in a plasma processing apparatus of
another exemplary embodiment. FIGS. 13 and 14 are plan views of the
first member, the second member, and the driving mechanism of the
baffle structure illustrated in FIG. 12 when they are viewed from a
side portion thereof. FIG. 13 represents a state in which the
second member 623 is substantially horizontally supported. FIG. 14
represents a state in which the second member 623 is inclined with
respect to the axis AX. FIG. 15 is a view obtained by partially
cutting away the first member and the second member of the baffle
structure illustrated in FIG. 12. In FIG. 15, the baffle structure
in the state illustrated in FIG. 14 is represented by solid lines,
and the baffle structure in the state illustrated in FIG. 13 is
represented by long and two short dashed lines. Further, FIGS. 13,
14 and 15 omit illustration of the shaft body 69, the sealing
mechanism SL, and the driving device 70, which are placed in front
of the baffle structure 603.
[0085] The baffle structure 603 and the driving mechanism DM
illustrated in FIGS. 12 to 15 may be used in place of the baffle
structure 60 and the driving mechanism DM of the above-described
exemplary embodiment.
[0086] The first member 61 of the baffle structure 603 is the same
as the first member 61 of the baffle structure 60. The baffle
structure 603 includes a single second member 623. The second
member 623 includes a body portion 623a and a flange portion 623b.
The body portion 623a has a cylindrical shape that has an inner
diameter larger than an outer diameter of the cylindrical portion
61 a and extends vertically in the outside of the cylindrical
portion 61a in the radial direction. The inner diameter (diameter)
of the body portion 623a of the second member 623 may be, for
example, 550.4 mm.
[0087] The flange portion 623b has a substantially annular plate
shape. The flange portion 623b is connected to the lower end of the
body portion 623a and extends outwardly in the radial direction
from the lower end of the body portion 623a. The second member 623
may include the body portion 623a and the flange portion 623b as
separate members. That is, the second member 623 may be a member
that has a separable structure and is fabricated by assembling the
body portion 623a and the flange portion 623b with each other.
Alternatively, the second member 623 may be an integrally molded
member that includes the body portion 623a and the flange portion
623b.
[0088] The driving mechanism DM is the same as the driving
mechanism DM of the above-described exemplary embodiment. Nuts 623n
are attached to the flange portion 623b, and are screwed with the
screw portions 69a of the shaft bodies 69 of the driving mechanism
DM. In the present exemplary embodiment, the driving mechanism DM
also includes a plurality of shaft bodies 69, and the shaft bodies
69 are arranged in the circumferential direction at substantially
equal intervals. Further, in the present exemplary embodiment, the
number of the axis bodies 69 is four. However, the number of the
axis bodies 69 may be an arbitrary number of 2 or more.
[0089] Hereinafter, descriptions will be made on the operation of
the baffle structure 603 with reference to FIGS. 13, 14, and 15. In
the baffle structure 602, the second member 623 may be moved up and
down, and the proportion of shielding, by the second member 623,
the plurality of through holes 61h formed in the cylindrical
portion 61a may be adjusted. Accordingly, the conductance of the
gas flow path between the first space S1 and the second space S2
may be adjusted.
[0090] Further, in the baffle structure 603, when the vertical
positions of the plurality of nuts 623n are changed by the driving
mechanism DM, the second member 623 may be inclined as illustrated
in FIG. 14 from the state in which the central axis of the second
member 623 is placed on the axis AX, i.e., the state in which the
second member 623 is horizontally supported (see FIG. 13).
[0091] For example, as illustrated in FIG. 15, when a nut 623n
placed at one side with respect to the axis AX (the left side of
FIG. 15) in the X3 direction orthogonal to the vertical direction
(the Z direction) is moved down, and a nut 623n placed at the
opposite side (the right side of FIG. 15) is moved up so as to
cause a height difference of a distance t between the bottom
surface of the second member 623 at the one side and the bottom
surface of the second member 623 at the opposite side, the central
axis AX3 of the second member 623 becomes inclined with respect to
the axis AX by an inclination angle .theta..sub.c. When the
distance between the two shaft bodies 69 placed at the one side and
the opposite side interposing the axis AX therebetween is DX, the
inclination angle .theta..sub.C is approximated to
.theta..sub.C=sin-1(t/DX). Accordingly, the inclination angle
.theta..sub.C of the second member 623 may be adjusted by changing
the distance t by adjusting the vertical positions of the plurality
of nuts 623n. When the inclination angle of the second member 623
is adjusted as described above, the proportion of shielding each of
the plurality of through holes 61h by the body portion of the
second member 623 is changed in the circumferential direction as
represented by the solid lines of FIGS. 11A and 11B. Further,
assuming that the radius of the inner peripheral surface (indicated
as the reference number 623i in FIG. 15) of the body portion 623a
of the second member 623 is ra, and the length of the body portion
623a in the height direction thereof is very small compared to the
radius of the body portion 623a, the upper end of the inner
peripheral surface of the body portion 623a at one side of the X3
direction (the left side in FIG. 15) is moved away from the outer
peripheral surface of the cylindrical portion 61a by a distance of
ra.times.(1-cos .theta..sub.C) in the state represented by the
solid lines in FIG. 15, compared to the state represented by the
long and two short dashed lines in FIG. 15. Meanwhile, the upper
end of the inner peripheral surface of the body portion 623a at the
opposite side of the X3 direction (the right side in FIG. 15) is
moved toward the outer peripheral surface of the cylindrical
portion 61a in the state represented by the solid lines in FIG. 15,
compared to the state represented by the long and two short dashed
lines in FIG. 15. In this way, when the inclination angle of the
second member 623 is adjusted, the radial distance between the
outer peripheral surface of the cylindrical portion 61a of the
first member 61 and the inner peripheral surface of the body
portion 623a of the second member 623 changes in the
circumferential direction. Accordingly, the distribution of the
pressure on the placement region 20r may be adjusted.
[0092] In the plasma processing apparatus 10 having any one of the
above-described baffle structures 60, 602, and 603, for example,
the following exemplary plasma processings may be performed. In a
first exemplary plasma processing, the controller Cnt performs a
first control and a second control. In the first control, the
controller Cnt controls the driving mechanism to move the second
member to a position of any one side of an upward side and a
downward side in an alternate manner. In the second control, the
controller Cnt controls the driving mechanism to move the second
member to a position of the other side of the upward side and the
downward side in an alternate manner. In the first exemplary plasma
processing, a plasma processing of a wafer is performed in the
first space S1 by setting the pressure of the space S1 to any one
of a high pressure and a low pressure, and subsequently, the plasma
processing of the wafer is performed in the first space S1 by
setting the pressure of the space S1 to the other one of the high
pressure and the low pressure. Gases supplied to the first space S1
from the gas supply portion GS at the time of performing the first
control and the second control of the first exemplary plasma
processing may be an identical gas. Further, in the first exemplary
plasma processing, the first control and the second control may be
alternately performed. In the first exemplary plasma processing,
the plasma processing of the wafer in the first space S1 may be
performed while sequentially setting the pressure of the first
space S1 to different pressures. Further, a transition time
required for the switching of the pressure of the first space S1
may be reduced. Also, the distribution of the pressure on the
placement region 20r may be adjusted.
[0093] In a second exemplary plasma processing, the controller Cnt
supplies a first gas to the gas supply portion GS in the first
control, and a second gas to the gas supply portion GS in the
second control. In the second exemplary plasma processing, the
second gas is different from the first gas. That is, the second gas
has a different composition from that of the first gas. In the
second exemplary plasma processing, the first control and the
second control may be alternately repeated.
[0094] According to the second exemplary plasma processing, when,
for example, a depositional gas is used as the first gas, and for
example, a corrosive gas is used as the second gas, a deposition
processing of a protective film on a film of the wafer W and an
etching of the film of the wafer W may be alternately performed. In
such a plasma processing, a pressure to be set as the pressure of
the first space S1 in the deposition processing, and a pressure to
be set as the pressure of the first space S1 in the etching are
different from each other. In this case, the exemplary plasma
processing in the same plasma processing apparatus 10 may be
performed by alternately performing the first control and the
second control. Further, in the plasma processing apparatus 10, a
transition time required for the switching of the pressure of the
first space Si between the deposition processing and the etching
may be reduced. Also, the distribution of the pressure on the
placement region 20r may be adjusted.
[0095] The second exemplary plasma processing may be also used for
continuous etching of two different types of films of a wafer W. In
the etching of two different types of films, a gas type and the
pressure of the first space S1 to be used for etching one film are
different from a gas type and the pressure of the first space S1 to
be used for etching the other film. In this case, the exemplary
plasma processing in the same plasma processing apparatus 10 may be
performed by alternately performing the first control and the
second control. Further, in the plasma processing apparatus 10, a
transition time required for the switching of the pressure of the
first space S1 in order to switch the etching of one film to the
etching of the other film may be reduced. Also, the distribution of
the pressure on the placement region 20r may be adjusted.
[0096] Various exemplary embodiments have been described. However,
various modifications may be made without being limited to the
foregoing exemplary embodiments. For example, the shape of the
plurality of through holes 61h formed in the cylindrical portion
61a may be an arbitrary shape as long as the shape is vertically
elongated. For example, the shape of the through holes 61h may be
an inverted triangular shape of which the width becomes narrow
toward a downward direction or a diamond shape.
[0097] In the above-described exemplary embodiments, the driving
devices 70 are motors and drive the shaft bodies 69 so as to move
the second members 62. However, the driving devices 70 may be
hydraulic or pneumatic cylinders to move the second members 62 up
and down.
[0098] In the above-described plasma processing apparatus 10, the
first high frequency power supply HFS is electrically connected to
the lower electrode 18. However, the first high frequency power
supply HFS may be electrically connected to the upper electrode
30.
[0099] Further, the above-described plasma processing apparatus 10
is a capacitively coupled plasma processing apparatus. However, the
plasma processing apparatus to which the technical idea described
by the explanation of the foregoing exemplary embodiments may be
applied may be an arbitrary type of a plasma processing apparatus,
and for example, an inductively coupled plasma processing apparatus
or a plasma processing apparatus using surface waves such as, for
example, microwaves.
[0100] Hereinafter, descriptions will be made on a simulation that
was conducted to evaluate the plasma processing apparatus 10 having
the baffle structure 60. In such a simulation, the distribution of
a pressure generated right on the placement region 20r was
calculated in the case where among the four second members 62
illustrated in FIG. 16A (FIG. 16A illustrates the body portions 62
of the respective second members 62), only the second member 62
represented as the reference symbol A is placed at a position that
does not face the through holes 61h, and the other second members
62 are placed to face and completely shield the through holes 61h.
Further, in the simulation, the following condition was set.
[0101] <Simulation Condition> [0102] Outer diameter
(diameter) of cylindrical portion 61a: 550 mm [0103] Plate
thickness of cylindrical portion 61a: 5 mm [0104] Width of each of
through holes 61h: 3.5 mm [0105] Length of each of through holes
61h: 30 mm [0106] Distance r1 between inner curved surface 62i of
body portion 62a and axis AX: 275.2 mm [0107] Gas supply by the gas
supply portion GS: N.sub.2 gas (200 sccm)
[0108] The distribution of the pressure right on the placement
region 20r that was calculated by the simulation is illustrated in
FIG. 16B. In FIG. 16B, the horizontal axis and the vertical axis
represent a potion on two orthogonal coordinate axes when the
center of the placement region 20r is zero (0). Further, in FIG.
16B, the distribution of the pressure right on the placement table
20r is represented by contour lines. The numerical values
superimposed on the contour lines refer to pressures in the unit of
Pascal. As illustrated in FIG. 16B, in the pressure distribution
calculated by the simulation, the pressure becomes low toward the
direction in which the second member represented by the reference
symbol A in FIG. 16A is placed. From this, it was confirmed that
the pressure distribution right on the placement region 20r may be
adjusted by individually adjusting the vertical positions of the
plurality of the second members 62.
[0109] From the foregoing, it will be appreciated that various
embodiments of the present disclosure have been described herein
for purposes of illustration, and that various modifications may be
made without departing from the scope and spirit of the present
disclosure. Accordingly, the various embodiments disclosed herein
are not intended to be limiting, with the true scope and spirit
being indicated by the following claims.
* * * * *