U.S. patent application number 14/610876 was filed with the patent office on 2016-06-16 for integrated device package comprising photo sensitive fill between a substrate and a die.
The applicant listed for this patent is QUALCOMM Incorporated. Invention is credited to Rajneesh Kumar, Vladimir Noveski, Milind Pravin Shah.
Application Number | 20160172299 14/610876 |
Document ID | / |
Family ID | 54937405 |
Filed Date | 2016-06-16 |
United States Patent
Application |
20160172299 |
Kind Code |
A1 |
Noveski; Vladimir ; et
al. |
June 16, 2016 |
INTEGRATED DEVICE PACKAGE COMPRISING PHOTO SENSITIVE FILL BETWEEN A
SUBSTRATE AND A DIE
Abstract
An integrated device package that includes a die, a substrate, a
fill and a conductive interconnect. The die includes a pillar,
where the pillar has a first pillar width. The substrate (e.g.,
package substrate, interposer) includes a dielectric layer and a
substrate interconnect (e.g., surface interconnect, embedded
interconnect). The fill is located between the die and the
substrate. The conductive interconnect is located within the fill.
The conductive interconnect includes a first interconnect width
that is about the same or less than the first pillar width. The
conductive interconnect is coupled to the pillar and the substrate
interconnect. The fill is a non-conductive photosensitive material.
The fill is a photosensitive film. The substrate interconnect
includes a second interconnect width that is equal or greater than
the first pillar width. The conductive interconnect includes one of
at least a paste, a solder and/or an enhanced solder comprising a
polymeric material.
Inventors: |
Noveski; Vladimir;
(Encinitas, CA) ; Shah; Milind Pravin; (San Diego,
CA) ; Kumar; Rajneesh; (San Diego, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
QUALCOMM Incorporated |
San Diego |
CA |
US |
|
|
Family ID: |
54937405 |
Appl. No.: |
14/610876 |
Filed: |
January 30, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62091400 |
Dec 12, 2014 |
|
|
|
Current U.S.
Class: |
257/737 ;
438/125 |
Current CPC
Class: |
H01L 23/3157 20130101;
H01L 2224/131 20130101; H01L 2224/29006 20130101; H01L 2224/27438
20130101; H01L 24/81 20130101; H01L 24/92 20130101; H01L 2224/0345
20130101; H01L 2224/05546 20130101; H01L 2224/05571 20130101; H01L
2224/81101 20130101; H01L 2224/81191 20130101; H01L 23/5226
20130101; H01L 2224/13147 20130101; H01L 2224/03914 20130101; H01L
2224/16013 20130101; H01L 24/03 20130101; H01L 2224/05568 20130101;
H01L 2224/05647 20130101; H01L 24/83 20130101; H01L 2224/03452
20130101; H01L 2224/73204 20130101; H01L 2224/81192 20130101; H01L
23/5283 20130101; H01L 24/27 20130101; H01L 2224/05647 20130101;
H01L 2224/1111 20130101; H01L 2224/13147 20130101; H01L 2224/05571
20130101; H01L 23/49838 20130101; H01L 24/73 20130101; H01L
2224/05546 20130101; H01L 24/17 20130101; H01L 24/11 20130101; H01L
2224/03452 20130101; H01L 2224/73104 20130101; H01L 2224/83191
20130101; H01L 2224/16111 20130101; H01L 2224/0348 20130101; H01L
2224/16238 20130101; H01L 2224/81801 20130101; H01L 2924/00014
20130101; H01L 2924/00014 20130101; H01L 2924/014 20130101; H01L
2924/00014 20130101; H01L 2924/00014 20130101; H01L 2924/00014
20130101; H01L 2224/16227 20130101; H01L 2224/2711 20130101; H01L
24/29 20130101; H01L 2224/16014 20130101; H01L 2224/0347 20130101;
H01L 2924/2064 20130101; H01L 2224/0345 20130101; H01L 2224/0346
20130101; H01L 2224/11334 20130101; H01L 2224/131 20130101; H01L
2224/83192 20130101; H01L 2924/00012 20130101; H01L 2924/00014
20130101; H01L 24/16 20130101; H01L 2224/13007 20130101; H01L
2224/0347 20130101; H01L 2224/11438 20130101; H01L 23/49827
20130101; H01L 24/13 20130101; H01L 2224/0346 20130101; H01L
2224/03602 20130101; H01L 2224/16237 20130101; H01L 2924/00014
20130101 |
International
Class: |
H01L 23/528 20060101
H01L023/528; H01L 23/31 20060101 H01L023/31; H01L 23/00 20060101
H01L023/00; H01L 23/522 20060101 H01L023/522; H01L 23/498 20060101
H01L023/498 |
Claims
1. An integrated device package comprising: a die comprising a die
interconnect, wherein the die interconnect comprises a first die
interconnect width; a substrate comprising a dielectric layer and a
substrate interconnect; a fill located between the die and the
substrate; and a conductive interconnect located within the fill,
the conductive interconnect comprising a first interconnect width
that is about the same or less than the first die interconnect
width, wherein the conductive interconnect is coupled to the die
interconnect and the substrate interconnect.
2. The integrated device package of claim 1, wherein the fill is a
non-conductive photosensitive material.
3. The integrated device package of claim 1, wherein the fill is a
photosensitive film.
4. The integrated device package of claim 1, wherein the substrate
interconnect includes a second interconnect width that is equal or
greater than the first die interconnect width.
5. The integrated device package of claim 1, wherein the substrate
interconnect includes a second interconnect width that is equal or
greater than the first interconnect width.
6. The integrated device package of claim 1, wherein the conductive
interconnect includes one of at least a paste, a solder and/or an
enhanced solder comprising a polymeric material.
7. The integrated device package of claim 1, wherein the substrate
interconnect is one of at least a surface interconnect and/or an
embedded interconnect.
8. The integrated device package of claim 1, wherein the die
interconnect is one from a set of pillars comprising a pitch of
about 40 microns (.mu.m) or less.
9. The integrated device package of claim 1, wherein the substrate
is one of at least a package substrate and/or an interposer.
10. The integrated device package of claim 1, wherein the
integrated device package is incorporated into a device selected
from a group comprising of a music player, a video player, an
entertainment unit, a navigation device, a communications device, a
mobile device, a mobile phone, a smartphone, a personal digital
assistant, a fixed location terminal, a tablet computer, a
computer, a wearable device, and a laptop computer, and further
including the device.
11. A method for fabricating an integrated device package,
comprising: providing a die comprising a die interconnect, wherein
the die interconnect comprises a first die interconnect width;
coupling a non-conductive layer and a conductive interconnect to
the die and the die interconnect, wherein coupling the
non-conductive layer and the conductive interconnect comprises
coupling the conductive interconnect to the die interconnect, the
conductive interconnect comprising a first interconnect width that
is about the same or less than the first die interconnect width;
and coupling the die and the non-conductive layer to a substrate
comprising a dielectric layer and a substrate interconnect, wherein
coupling the die and the non-conductive layer to the substrate
comprises coupling the conductive interconnect to the substrate
interconnect.
12. The method of claim 11, wherein the non-conductive layer is a
non-conductive photosensitive material.
13. The method of claim 11, wherein the non-conductive layer is a
photosensitive film.
14. The method of claim 11, wherein the substrate interconnect
includes a second interconnect width that is equal or greater than
the first die interconnect width.
15. The method of claim 11, wherein the substrate interconnect
includes a second interconnect width that is equal or greater than
the first interconnect width.
16. The method of claim 11, wherein the conductive interconnect
includes one of at least a paste, a solder and/or an enhanced
solder comprising a polymeric material.
17. The method of claim 11, wherein the substrate interconnect is
one of at least a surface interconnect and/or an embedded
interconnect.
18. The method of claim 11, wherein the die interconnect is one
from a set of pillars comprising a pitch of about 40 microns
(.mu.m) or less.
19. The method of claim 11, wherein the substrate is one of at
least a package substrate and/or an interposer.
20. The method of claim 11, wherein the integrated device package
is incorporated into a device selected from a group comprising of a
music player, a video player, an entertainment unit, a navigation
device, a communications device, a mobile device, a mobile phone, a
smartphone, a personal digital assistant, a fixed location
terminal, a tablet computer, a computer, a wearable device, and a
laptop computer, and further including the device.
Description
CLAIM OF PRIORITY/CLAIM OF BENEFIT
[0001] The present application claims priority to U.S. Provisional
Application No. 62/091,400 titled "Integrated Device Package
Comprising Photo Sensitive Fill Between a Substrate and a Die",
filed Dec. 12, 2014, which is hereby expressly incorporated by
reference herein.
BACKGROUND
[0002] 1. Field
[0003] Various features relate to an integrated device package that
includes a photo sensitive fill between a substrate and a die.
[0004] 2. Background
[0005] FIG. 1 illustrates a conventional configuration of an
integrated package that includes a die. Specifically, FIG. 1
illustrates an integrated device package 100 that includes a
package substrate 101, a die 103, and a fill 130. The package
substrate 101 includes several dielectric layers (e.g., dielectric
layer 102), several interconnects (e.g., traces, vias, pads) 105,
and a set of solder balls 115. The package substrate 101 may
include an interconnect 111. The interconnect 111 may be a surface
interconnect located on the surface of the package substrate 101
(e.g., on the surface of a dielectric layer of the package
substrate). The interconnect 111 may be a trace and/or a pad.
[0006] As shown in FIG. 1, the die 103 is coupled to the package
substrate 101 through a pillar 121, a solder 123, and the
interconnect 111. The pillar 121 is coupled to the die 103. The
pillar 121 may be a metal layer (e.g., a copper pillar). The fill
130 is located between the package substrate 101 and the die 103.
The fill 130 encapsulates the pillar 121, the solder 123, and the
interconnect 111. In some implementations, the fill 130 is a paste.
The die 103 is coupled to the package substrate 101 by using a
thermal compression flip chip (TCFC) process. The result of using a
TCFC process is that it produces a laterally elongated solder 123,
as shown in FIG. 1. Specifically, the elongated solder 123 has a
lateral width that is greater than the width of the pillar 121
and/or the width of the interconnect 111. An elongated solder 123
is problematic in a package that includes high density, low pitch
and/or low spacing interconnects because the elongated solder 123
may make physical contact with a nearby solder, pillar and/or
interconnect causing a short in the package.
[0007] FIG. 2 illustrates another example of how solder may be
formed between a die and a package substrate. As shown in FIG. 2,
the die 103 is coupled to the package substrate 101 through the
pillar 121, a solder 200, and the interconnect 111. A fill 230 is
located between the package substrate 101 and the die 103. The fill
230 encapsulates the pillar 121, the solder 200, and the
interconnect 111. The fill 230 is an under fill.
[0008] In FIG. 2, the die 103 is coupled to the package substrate
101 by using a mass reflow process. The result of using a mass
reflow process is that it also produces a laterally elongated
solder 200. Specifically, the elongated solder 200 has a lateral
width that is greater than the width of the pillar 121 and/or the
width of the interconnect 111. Moreover, the solder 200 couples to
the side portions (e.g., side walls) of the interconnect 111. An
elongated solder 200 is problematic in a package that includes high
density, low pitch and/or low spacing interconnects because the
elongated solder 200 may make physical contact with a nearby
solder, pillar and/or interconnect causing a short in the
package.
[0009] FIG. 3 illustrates yet another example of how solder may be
formed between a die and a package substrate. Specifically, FIG. 3
illustrates a die 103 coupled to a package substrate 301 through a
pillar 321, a solder 323, and an interconnect 311. A fill 330 is
located between the package substrate 301 and the die 303. The fill
330 encapsulates the pillar 321, the solder 323, and the
interconnect 311.
[0010] The pillar 321 has a width that is less than the width of
the interconnect 311. The resulting solder 323 between the pillar
321 and the interconnect 311 is the solder 323 having a width that
is greater than the width of the pillar 321. This results in
unnecessary material (e.g., too much solder 323), resulting in
higher cost of the integrated package. Moreover, at least a
majority of the solder 323 has a dimension that is greater than the
pillar 321.
[0011] Therefore, there is a need for an integrated device package
that provides a design that is less likely to produce solder that
will causes shorts, resulting in less defective integrated device
packages. Ideally, such an integrated device package will have a
better design and form factor, lower cost, while at the same time
meeting the needs and/or requirements of mobile, wearable or
portable computing devices.
SUMMARY
[0012] Various features, apparatus and methods described herein an
integrated device package that includes a photo sensitive fill
between a substrate and a die.
[0013] A first example provides that an integrated device package
that includes a die, a substrate, a fill located between the die
and the substrate, and a conductive interconnect located within the
fill. The die includes a die interconnect, where the die
interconnect comprises a first die interconnect width. The
substrate includes a dielectric layer and a substrate interconnect.
The conductive interconnect includes a first interconnect width
that is about the same or less than the first die interconnect
width, where the conductive interconnect is coupled to the die
interconnect and the substrate interconnect.
[0014] A second example provides a method for fabricating an
integrated device package. The method provides a die that includes
a die interconnect. The die interconnect includes a first die
interconnect width. The method couples a non-conductive layer and a
conductive interconnect to the die and the die interconnect, where
coupling the non-conductive layer and the conductive interconnect
includes coupling the conductive interconnect to the die
interconnect. The conductive interconnect includes a first
interconnect width that is about the same or less than the first
die interconnect width. The method couples the die and the
non-conductive layer to a substrate that includes a dielectric
layer and a substrate interconnect, where coupling the die and the
non-conductive layer to the substrate includes coupling the
conductive interconnect to the substrate interconnect.
DRAWINGS
[0015] Various features, nature and advantages may become apparent
from the detailed description set forth below when taken in
conjunction with the drawings in which like reference characters
identify correspondingly throughout.
[0016] FIG. 1 illustrates a conventional integrated device
package.
[0017] FIG. 2 illustrates a close up view of how a die is coupled
to a substrate through a solder.
[0018] FIG. 3 illustrates a close up view of how a die is coupled
to a substrate through a solder.
[0019] FIG. 4 illustrates an example of a profile view of a cross
section of an integrated device package that includes a
photosensitive fill.
[0020] FIG. 5 illustrates an example of a profile view of a cross
section of an integrated device package that includes a
photosensitive fill.
[0021] FIG. 6 illustrates an example of a profile view of a cross
section of an integrated device package that includes a
photosensitive fill.
[0022] FIG. 7 illustrates an example of a profile view of a cross
section of an integrated device package that includes a
photosensitive fill.
[0023] FIG. 8 illustrates an example of a profile view of a cross
section of an integrated device package that includes a
photosensitive fill.
[0024] FIG. 9 illustrates a portion of an integrated device package
that includes a solder resist layer on a substrate.
[0025] FIG. 10 illustrates a portion of another integrated device
package that includes a solder resist layer on a substrate.
[0026] FIG. 11 illustrates a portion of an integrated device
package that includes a solder resist layer on a substrate.
[0027] FIG. 12 illustrates a portion of another integrated device
package that includes a solder resist layer on a substrate.
[0028] FIG. 13 illustrates a portion of an integrated device
package that includes a solder resist layer on a substrate.
[0029] FIG. 14 (which includes FIGS. 14A-14B) illustrates an
exemplary sequence for providing/fabricating integrated device
package that includes a photosensitive fill.
[0030] FIG. 15 illustrates an exemplary flow diagram of a method
for providing/fabricating integrated device package that includes a
photosensitive fill.
[0031] FIG. 16 (which includes FIGS. 16A-16B) illustrates an
exemplary sequence for providing/fabricating integrated device
package that includes a photosensitive fill.
[0032] FIG. 17 illustrates an exemplary flow diagram of a method
for providing/fabricating integrated device package that includes a
photosensitive fill.
[0033] FIG. 18 illustrates an example of a semi-additive patterning
(SAP) process.
[0034] FIG. 19 illustrates an example of flow diagram of a
semi-additive patterning (SAP) process.
[0035] FIG. 20 illustrates an example of a damascene process.
[0036] FIG. 21 illustrates an example of a flow diagram of a
damascene process.
[0037] FIG. 22 illustrates various electronic devices that may
integrate an integrated device, an integrated device package, a
semiconductor device, a die, an integrated circuit, a substrate, an
interposer and/or PCB described herein.
DETAILED DESCRIPTION
[0038] In the following description, specific details are given to
provide a thorough understanding of the various aspects of the
disclosure. However, it will be understood by one of ordinary skill
in the art that the aspects may be practiced without these specific
details. For example, circuits may be shown in block diagrams in
order to avoid obscuring the aspects in unnecessary detail. In
other instances, well-known circuits, structures and techniques may
not be shown in detail in order not to obscure the aspects of the
disclosure.
OVERVIEW
[0039] Some features pertain to an integrated device package that
includes a die, a substrate, a fill and a conductive interconnect.
The die includes a pillar (e.g., die interconnect), where the
pillar has a first pillar width. The substrate (e.g., package
substrate, interposer) includes a dielectric layer and a substrate
interconnect (e.g., surface interconnect, embedded interconnect).
The fill is located between the die and the substrate. The
conductive interconnect is located within the fill. The conductive
interconnect includes a first interconnect width that is about the
same or less than the first pillar width. The conductive
interconnect is coupled to the pillar and the substrate
interconnect. In some implementations, the fill is a non-conductive
photosensitive material. In some implementations, the fill is a
photosensitive film. The substrate interconnect includes a second
interconnect width that is equal or greater than the first pillar
width. The substrate interconnect includes a second interconnect
width that is equal or greater than the first interconnect width.
In some implementations, the conductive interconnect includes one
of at least a paste, a solder and/or an enhanced solder comprising
a polymeric material.
[0040] In some implementation, an interconnect is an element or
component of a device (e.g., integrated device, integrated device
package, die) and/or a base (e.g., package substrate, printed
circuit board, interposer) that allows or facilitates an electrical
connection between two points, elements and/or components. In some
implementations, an interconnect may include a trace, a via, a pad,
a pillar, a redistribution metal layer, and/or an under bump
metallization (UBM) layer. In some implementations, an interconnect
is an electrically conductive material that provides an electrical
path for a signal (e.g., data signal, ground signal, power signal).
An interconnect may include more than one element/component.
Exemplary Integrated Device Package Comprising Photosensitive
Fill
[0041] FIG. 4 illustrates an integrated device package that
includes a photosensitive fill. Specifically, FIG. 4 illustrates an
integrated device package 400 that includes a substrate 401, a die
403, and a fill 430. The substrate 401 may be a package substrate
and/or an interposer. The substrate 401 includes several dielectric
layers (e.g., dielectric layers 402, 404, 406, 408, 410), several
interconnects (e.g., traces, vias, pads) 405, a solder resist layer
412 and a set of solder balls 415. The substrate 401 may be a
substrate that includes a core layer (e.g., where dielectric layer
402 is a core layer), or the substrate 401 may be a coreless
substrate. The substrate 401 may include an interconnect 411 (e.g.,
substrate interconnect). The interconnect 411 may be a surface
interconnect located on the surface of the substrate 401 (e.g., on
the surface of dielectric layer 408 of the substrate). The
interconnect 411 may be a trace and/or a pad. The substrate 401 may
include several interconnects 411.
[0042] As shown in FIG. 4, the die 403 is coupled to the substrate
401 through a pillar 421, a conductive interconnect 423, and the
interconnect 411. It should be noted that the die 403 may be
coupled to the substrate 401 through several pillars 421, several
conductive interconnects 423, and several interconnects 411. The
pillar 421 is coupled to the die 403. The pillar 421 is coupled
(e.g., electrically coupled) to an interconnect (e.g.,
redistribution interconnect, under bump metallization (UBM) layer)
of the die 403. In some implementations, the pillar 421 is part of
the die 403. The pillar 421 may be a die interconnect. The pillar
421 may have different shapes and sizes. The pillar 421 may be a
metal layer (e.g., a copper pillar). The fill 430 is located
between the package substrate 401 and the die 403. The fill 430
encapsulates the pillar 421, the conductive interconnect 423, and
the interconnect 411. The fill 430 is a non-conductive layer and/or
non-conductive film. In some implementations, the fill 430 is a
photosensitive fill. A photosensitive fill may be a material that
is photo patternable, photo-lithographable and/or photo-etchable.
For example, a photosensitive fill may be a material that can be
removed (e.g., washed away) once the photosensitive fill is exposed
to a light (e.g., UV light).
[0043] The conductive interconnect 423 (e.g., electrically
conductive interconnect) is coupled to the pillar 421 and the
interconnect 411. Different implementations may use different
materials for the conductive interconnect 423. In some
implementations, the conductive interconnect 423 is a paste (e.g.,
copper paste) and/or solder (e.g., cured solder, enhanced solder
comprising a polymeric material).
[0044] As shown in FIG. 4, the conductive interconnect 423 has a
dimension (e.g., width, diameter) that is about the same (e.g.,
equal) or less than a dimension (e.g., die interconnect width) of
the pillar 421 and/or a dimension of the interconnect 411. In some
implementations, at least a majority (e.g., more than half,
substantially all, entire) of the conductive interconnect 423 has a
dimension that is about the same or less than a dimension (e.g.,
die interconnect width) of the pillar 421 (e.g., die interconnect)
and/or a dimension of the interconnect 411. Unlike conventional
processes that produce an elongated solder, the dimensions of the
conductive interconnect 423 is controlled and/or defined by the
fill 430. Specifically, the conductive interconnect 423 is defined
in a cavity of the fill 430, which as described above may be a
non-conducting layer/non-conducting film. How the conductive
interconnect 423 is formed is further described below in at least
FIGS. 14A-14B. In some implementations, the pitch of the pillar
421, the conductive interconnect 423, and/or the interconnect 411
is about 40 microns (.mu.m) or less. A pitch is defined as a center
to center distance between two neighboring and/or adjacent
interconnects pillars, and/or conductive interconnects.
[0045] As a result of the above design of the conductive
interconnect 423 in the fill 430, the conductive interconnect 423
will not contact another conductive interconnect or interconnect.
Additionally, in contrast to conventional methods, the above design
reduces or eliminates excess material, thereby resulting in a lower
cost product and/or device.
[0046] In some implementations, a die may be coupled to an
interconnect that is embedded in a surface of the substrate.
[0047] FIG. 5 illustrates an integrated device package 500 that
includes a substrate 501, the die 403, and the fill 430. The
substrate 501 may be a package substrate and/or an interposer. The
substrate 501 includes several dielectric layers (e.g., dielectric
layers 402, 404, 406, 408, 410), several interconnects (e.g.,
traces, vias, pads) 405, a solder resist layer 412 and a set of
solder balls 415. The substrate 501 may be a substrate that
includes a core layer (e.g., where dielectric layer 402 is a core
layer), or the substrate 401 may be a coreless substrate. The
substrate 401 may include an interconnect 511 (e.g., substrate
interconnect). The interconnect 511 may be an embedded interconnect
located at least (e.g., partially, completely) in the surface of
the substrate 401 (e.g., in the dielectric layer 408 of the
substrate). The interconnect 511 may be a trace and/or a pad. The
substrate 501 may include several interconnects 511.
[0048] As shown in FIG. 5, the die 403 is coupled to the substrate
501 through the pillar 421, the conductive interconnect 423, and
the interconnect 511. It should be noted that the die 403 may be
coupled to the substrate 501 through several pillars 421, several
conductive interconnects 423, and several interconnects 511. The
pillar 421 is coupled to the die 403. The pillar 421 may be a die
interconnect. The pillar 421 may be a metal layer (e.g., a copper
pillar). The fill 430 is located between the package substrate 501
and the die 403. The fill 430 encapsulates the pillar 421, the
conductive interconnect 423, and the interconnect 511. The fill 430
is a non-conductive layer and/or non-conductive film. In some
implementations, the fill 430 is a photosensitive fill. A
photosensitive fill may be a material that is photo patternable,
photo-lithographable and/or photo-etchable. For example, a
photosensitive fill may be a material that can be removed (e.g.,
washed away) once the photosensitive fill is exposed to a light
(e.g., UV light).
[0049] The conductive interconnect 423 (e.g., electrically
conductive interconnect) is coupled to the pillar 421 and the
interconnect 511. Different implementations may use different
materials for the conductive interconnect 423. In some
implementations, the conductive interconnect 423 is a paste (e.g.,
copper paste) and/or solder (e.g., cured solder, enhanced solder
comprising a polymeric material).
[0050] As shown in FIG. 5, the conductive interconnect 423 has a
dimension (e.g., width, diameter) that is about the same (e.g.,
equal) or less than a dimension (e.g., die interconnect width) of
the pillar 421 and/or a dimension of the interconnect 511. In some
implementations, at least a majority (e.g., more than half,
substantially all, entire) of the conductive interconnect 423 has a
dimension that is about the same or less than a dimension (e.g.,
die interconnect width) of the pillar 421 (e.g., die interconnect)
and/or a dimension of the interconnect 511. Unlike conventional
processes that produce an elongated solder, the dimensions of the
conductive interconnect 423 is controlled and/or defined by the
fill 430. Specifically, the conductive interconnect 423 is defined
in a cavity of the fill 430, which as described above may be a
non-conducting layer/non-conducting film. How the conductive
interconnect 423 is formed is further described below in at least
FIGS. 14A-14B. In some implementations, the pitch of the pillar
421, the conductive interconnect 423, and/or the interconnect 511
is about 40 microns (.mu.m) or less. A pitch is defined as a center
to center distance between two neighboring and/or adjacent
interconnects pillars, and/or conductive interconnects.
[0051] As a result of the above design of the conductive
interconnect 423 in the fill 430, the conductive interconnect 423
will not contact another conductive interconnect or interconnect.
Additionally, in contrast to conventional integrated device
packages, the above design reduces or eliminates excess material,
thereby resulting in a lower cost product, device and/or
package.
[0052] In some implementations, a pillar of a die may have
different dimensions than the dimensions of an interconnect coupled
to a substrate. FIG. 6 illustrates an integrated device package 600
that includes the substrate 501, the die 403, and the fill 630. The
substrate 501 may be a package substrate and/or an interposer. The
substrate 501 includes several dielectric layers (e.g., dielectric
layers 402, 404, 406, 408, 410), several interconnects (e.g.,
traces, vias, pads) 405, a solder resist layer 412 and a set of
solder balls 415. The substrate 501 may be a substrate that
includes a core layer (e.g., where dielectric layer 402 is a core
layer), or the substrate 501 may be a coreless substrate. The
substrate 501 may include the interconnect 511 (e.g., substrate
interconnect). The interconnect 511 may be an embedded interconnect
located at least (e.g., partially, completely) in the surface of
the substrate 501 (e.g., in the dielectric layer 408 of the
substrate). The interconnect 511 may be a trace and/or a pad.
[0053] As shown in FIG. 6, the die 403 is coupled to the substrate
501 through the pillar 621, the conductive interconnect 623, and
the interconnect 511. It should be noted that the die 403 may be
coupled to the substrate 501 through several pillars 621, several
conductive interconnects 623, and several interconnects 511. The
pillar 621 is coupled to the die 403. The pillar 621 is coupled
(e.g., electrically coupled) to an interconnect (e.g.,
redistribution interconnect, under bump metallization (UBM) layer)
of the die 403. In some implementations, the pillar 621 is part of
the die 403. The pillar 621 may be a die interconnect. The pillar
621 may have different shapes and sizes. The pillar 621 may be a
metal layer (e.g., a copper pillar). The fill 630 is located
between the package substrate 501 and the die 403. The fill 630
encapsulates the pillar 621, the conductive interconnect 623, and
the interconnect 511. The fill 630 is a non-conductive layer and/or
non-conductive film. In some implementations, the fill 630 is a
photosensitive fill. A photosensitive fill may be a material that
is photo patternable, photo-lithographable and/or photo-etchable.
For example, a photosensitive fill may be a material that can be
removed (e.g., washed away) once the photosensitive fill is exposed
to a light (e.g., UV light).
[0054] The conductive interconnect 623 (e.g., electrically
conductive interconnect) is coupled to the pillar 621 and the
interconnect 511. Different implementations may use different
materials for the conductive interconnect 623. In some
implementations, the conductive interconnect 623 is a paste (e.g.,
copper paste) and/or solder (e.g., cured solder, enhanced solder
comprising a polymeric material).
[0055] As shown in FIG. 6, the conductive interconnect 623 has a
first dimension (e.g., width, diameter) that is about the same
(e.g., equal) or less than a first dimension (e.g., die
interconnect width) of the pillar 621 (e.g., die interconnect). In
some implementations, at least a majority (e.g., more than half,
substantially all, entire) of the conductive interconnect 623 has a
dimension that is about the same or less than a dimension of the
pillar 621 and/or a dimension of the interconnect 511. In addition,
the conductive interconnect 623 has a first dimension that is less
than a second dimension of the interconnect 511. In this example,
the interconnect 511 has a greater dimension (e.g., width,
diameter) than both the pillar 621 and the conductive interconnect
623. Unlike conventional processes that produce a solder that
completely wets to the entire surface of the interconnect (e.g.,
trace, pad) on the substrate (see FIG. 3), the dimensions of the
conductive interconnect 623 is controlled and/or defined by the
fill 630, which limits the conductive interconnect 623 to only wet
(e.g., physically couple) to a portion of the interconnect 511.
Specifically, the conductive interconnect 623 is defined in a
cavity of the fill 630, which as described above may be a
non-conducting layer/non-conducting film. How the conductive
interconnect 623 is formed is further described below in at least
FIGS. 14A-14B. In some implementations, the pitch of the pillar
621, the conductive interconnect 623, and/or the interconnect 511
is about 40 microns (.mu.m) or less.
[0056] In some implementations, a die may be coupled to an
interconnect that is embedded in a surface of the substrate, where
the embedded interconnect is offset from the surface of the
substrate.
[0057] FIG. 7 illustrates an integrated device package 700 that
includes a substrate 701, the die 403, and the fill 730. The
substrate 701 may be a package substrate and/or an interposer. The
substrate 701 includes several dielectric layers (e.g., dielectric
layers 402, 404, 406, 408, 410), several interconnects (e.g.,
traces, vias, pads) 405, a solder resist layer 412 and a set of
solder balls 415. The substrate 701 may be a substrate that
includes a core layer (e.g., where dielectric layer 402 is a core
layer), or the substrate 401 may be a coreless substrate. The
substrate 401 may include an interconnect 711 (e.g., substrate
interconnect). The interconnect 711 may be an embedded interconnect
located at least (e.g., completely) in the surface of the substrate
701 (e.g., in the dielectric layer 408 of the substrate). The
interconnect 711 is embedded in the surface of the substrate such
that the interconnect 711 is offset from the surface of the
substrate 401 (e.g., offset from the surface of the dielectric
layer 408 of the substrate). The interconnect 711 may be a trace
and/or a pad. The substrate 701 may include several interconnects
711.
[0058] As shown in FIG. 7, the die 403 is coupled to the substrate
701 through the pillar 421, the conductive interconnect 723, and
the interconnect 711. It should be noted that the die 403 may be
coupled to the substrate 701 through several pillars 421, several
conductive interconnects 723, and several interconnects 711. The
pillar 421 is coupled to the die 403. The pillar 621 may be a die
interconnect. The pillar 421 may be a metal layer (e.g., a copper
pillar). The fill 730 is located between the package substrate 701
and the die 403. The fill 730 encapsulates the pillar 421, the
conductive interconnect 723, and the interconnect 711. The fill 730
is a non-conductive layer and/or non-conductive film. In some
implementations, the fill 730 is a photosensitive fill A
photosensitive fill may be a material that is photo patternable,
photo-lithographable and/or photo-etchable. For example, a
photosensitive fill may be a material that can be removed (e.g.,
washed away) once the photosensitive fill is exposed to a light
(e.g., UV light).
[0059] The conductive interconnect 723 (e.g., electrically
conductive interconnect) is coupled to the pillar 421 and the
interconnect 711. Different implementations may use different
materials for the conductive interconnect 723. In some
implementations, the conductive interconnect 723 is a paste (e.g.,
copper paste) and/or solder (e.g., cured solder, enhanced solder
comprising a polymeric material). The conductive interconnect 723
is coupled to the embedded interconnect 711 such that at least part
of the conductive interconnect 723 is at least partially embedded
in the substrate 701 (e.g., at least partially embedded in the
dielectric layer 408 of the substrate 701).
[0060] As shown in FIG. 7, the conductive interconnect 723 has a
dimension (e.g., width, diameter) that is about the same (e.g.,
equal) or less than a dimension (e.g., die interconnect width) of
the pillar 421 and/or a dimension of the interconnect 711. In some
implementations, at least a majority (e.g., more than half,
substantially all, entire) of the conductive interconnect 723 has a
dimension that is about the same or less than a dimension of the
pillar 421 and/or a dimension of the interconnect 711. Unlike
conventional processes that produce an elongated solder, the
dimensions of the conductive interconnect 723 is controlled and/or
defined by the fill 730. Specifically, the conductive interconnect
723 is defined in a cavity of the fill 730, which as described
above may be a non-conducting layer/non-conducting film. How the
conductive interconnect 723 is formed is further described below in
at least FIGS. 14A-14B. In some implementations, the pitch of the
pillar 421, the conductive interconnect 723, and/or the
interconnect 711 is about 40 microns (.mu.m) or less.
[0061] As a result of the above design of the conductive
interconnect 723 in the fill 730, the conductive interconnect 723
will not contact another conductive interconnect or interconnect.
Additionally, in contrast to conventional integrated device
packages, the above design reduces or eliminates excess material,
thereby resulting in a lower cost product, device and/or
package.
[0062] In some implementations, a pillar of a die may have
different dimensions than the dimensions of an embedded
interconnect in a substrate. FIG. 8 illustrates an integrated
device package 800 that includes the substrate 701, the die 403,
and the fill 830. The substrate 701 may be a package substrate
and/or an interposer. The substrate 701 includes several dielectric
layers (e.g., dielectric layers 402, 404, 406, 408, 410), several
interconnects (e.g., traces, vias, pads) 405, a solder resist layer
412 and a set of solder balls 415. The substrate 701 may be a
substrate that includes a core layer (e.g., where dielectric layer
402 is a core layer), or the substrate 701 may be a coreless
substrate. The substrate 701 may include the interconnect 711
(e.g., substrate interconnect). The interconnect 711 may be an
embedded interconnect located at least (e.g., partially,
completely) in the surface of the substrate 701 (e.g., in the
dielectric layer 408 of the substrate). The interconnect 711 is
embedded in the surface of the substrate such that the interconnect
711 is offset from the surface of the substrate 701 (e.g., offset
from the surface of the dielectric layer 408 of the substrate). The
interconnect 711 may be a trace and/or a pad.
[0063] As shown in FIG. 8, the die 403 is coupled to the substrate
701 through the pillar 821, the conductive interconnect 823, and
the interconnect 711. It should be noted that the die 403 may be
coupled to the substrate 701 through several pillars 821, several
conductive interconnects 823, and several interconnects 711. The
pillar 821 is coupled to the die 403. The pillar 821 may be a die
interconnect. The pillar 821 is coupled (e.g., electrically
coupled) to an interconnect (e.g., redistribution interconnect,
under bump metallization (UBM) layer) of the die 403. In some
implementations, the pillar 821 is part of the die 403. The pillar
821 may have different shapes and sizes. The pillar 821 may be a
metal layer (e.g., a copper pillar). The fill 830 is located
between the package substrate 701 and the die 403. The fill 830
encapsulates the pillar 821, the conductive interconnect 823, and
the interconnect 711. The fill 830 is a non-conductive layer and/or
non-conductive film. In some implementations, the fill 830 is a
photosensitive fill. A photosensitive fill may be a material that
is photo patternable, photo-lithographable and/or photo-etchable.
For example, a photosensitive fill may be a material that can be
removed (e.g., washed away) once the photosensitive fill is exposed
to a light (e.g., UV light).
[0064] The conductive interconnect 823 (e.g., electrically
conductive interconnect) is coupled to the pillar 821 and the
interconnect 711. Different implementations may use different
materials for the conductive interconnect 823. In some
implementations, the conductive interconnect 823 is a paste (e.g.,
copper paste) and/or solder (e.g., cured solder, enhanced solder
comprising a polymeric material). The conductive interconnect 823
is coupled to the embedded interconnect 711 such that at least part
of the conductive interconnect 823 is at least partially embedded
in the substrate 701 (e.g., at least partially embedded in the
dielectric layer 408 of the substrate 701).
[0065] As shown in FIG. 8, the conductive interconnect 823 has a
first dimension (e.g., width, diameter) that is about the same
(e.g., equal) or less than a first dimension (e.g., die
interconnect width) of the pillar 821 (e.g., die interconnect). In
some implementations, at least a majority (e.g., more than half,
substantially all, entire) of the conductive interconnect 823 has a
dimension that is about the same or less than a dimension of the
pillar 821 and/or a dimension of the interconnect 711. In addition,
the conductive interconnect 823 has a first dimension that is less
than a second dimension of the interconnect 711. In this example,
the interconnect 711 has a greater dimension (e.g., width,
diameter) than both the pillar 821 and the conductive interconnect
823. Unlike conventional processes that produce a solder that
completely wets to the entire surface of the interconnect (e.g.,
trace, pad) on the substrate (see FIG. 3), the dimensions of the
conductive interconnect 823 is controlled and/or defined by the
fill 830, which limits the conductive interconnect 823 to only wet
(e.g., physically couple) to a portion of the interconnect 711.
Specifically, the conductive interconnect 823 is defined in a
cavity of the fill 830, which as described above may be a
non-conducting layer/non-conducting film. How the conductive
interconnect 823 is formed is further described below in at least
FIGS. 14A-14B. In some implementations, the pitch of the pillar
821, the conductive interconnect 823, and/or the interconnect 711
is about 40 microns (.mu.m) or less.
[0066] In some implementations, a solder resist (SR) layer may be
located between the die 403 and the substrate (e.g., substrates
401, 501, 601, 701, 801). FIGS. 9-13 illustrate a solder resist
layer 900 located between the die 403 and a substrate. In some
implementations, the solder resist layer 900 is part of the
substrate. As shown in FIGS. 9-13, the solder resist layer 900 is
located on the dielectric layer 408.
[0067] Having described several integrated device packages
comprising a photosensitive fill, a sequence and method for
providing and/or fabricating such an integrated device package will
now be described below.
Exemplary Sequence for Providing/Fabricating an Integrated Device
Package Comprising a Photosensitive Fill
[0068] In some implementations, providing/fabricating an integrated
device package that includes a photosensitive fill includes several
processes. FIG. 14 (which includes FIGS. 14A-14B) illustrates an
exemplary sequence for providing/fabricating an integrated device
package that includes a photosensitive fill. In some
implementations, the sequence of FIGS. 14A-14B may be used to
provide/fabricate the integrated device package of FIGS. 4-8 and/or
other integrated device packages described in the present
disclosure. However, for the purpose of simplification, FIGS.
14A-14B will be described in the context of providing/fabricating
the integrated device package of FIG. 6.
[0069] It should be noted that the sequence of FIGS. 14A-14B may
combine one or more stages in order to simplify and/or clarify the
sequence for providing an integrated device package. In some
implementations, the order of the processes may be changed or
modified.
[0070] Stage 1, as shown in FIG. 14A, illustrates a state after a
non-conductive layer 1400 is provided and coupled to a carrier
1401. The non-conductive layer 1400 may be a photosensitive layer.
A photosensitive layer may be a material that is photo-patternable,
photo-lithographable, and/or photo-etchable. The non-conductive
layer 1400 may be a non-conductive film. The non-conductive layer
1400 may be a fill.
[0071] Stage 2 illustrates a state after a photo resist mask layer
1402 is formed and coupled to the non-conductive layer 1400. The
photo resist mask layer 1402 may include a pattern, as illustrated
by the cavities in the photo resist mask layer 1402.
[0072] Stage 3 illustrates a state after cavities are formed in the
non-conductive layer 1400. In some implementations, the cavities
are formed after a photo-etching process (e.g., photo lithography
process), where the non-conductive layer 1400 is exposed to a light
(e.g., UV light) through the photo resist mask layer 1402, and
portions of the non-conductive layer 1400 are removed (e.g., washed
away).
[0073] Stage 4 illustrates a state after the photo resist mask
layer 1402 is uncoupled (e.g., removed, lift off) from the
non-conductive layer 1400, leaving the remaining non-conductive
layer 1400 and the carrier 1401.
[0074] Stage 5 illustrates a state after a conductive interconnect
1404 is formed in the cavities (e.g., cavity 1403) of the
non-conductive layer 1400. Different implementations may use
different materials for the conductive interconnect 1404. In some
implementations, the conductive interconnect 1404 is a paste (e.g.,
copper paste) and/or solder (e.g., cured solder, enhanced solder
comprising a polymeric material). In some implementations, the
conductive interconnect 1404 is formed in the cavities using a
screen printing process. In some implementations, the conductive
interconnect 1404 may be cured.
[0075] It should be noted that different implementations may
provide different levels or amounts of conductive materials to form
the conductive interconnect 1404. In some implementations, the
cavities of the non-conductive layer 1400 are completely filled
with the conductive material to form the conductive interconnect
1404. In other implementations, the cavities of the non-conductive
layer 1400 are partially filled with the conductive material to
form the conductive interconnect 1404. The conductive material in
the cavities may move and shift within the cavities of the
non-conductive layer 1400.
[0076] Stage 6, as shown in FIG. 14B, illustrates a state after a
die 1410 comprising pillars 1412 is coupled to the non-conductive
layer 1400 and the conductive interconnect 1404. The pillars 1412
are coupled to the conductive interconnect 1404.
[0077] Stage 7 illustrates a state after the carrier 1401 is
uncoupled (e.g., removed, lift-off) from the non-conductive layer
1400 and the conductive interconnect 1404, leaving behind the die
1410, the pillars 1412, the non-conductive layer 1400 and the
conductive interconnect 1404.
[0078] Stage 8 illustrates a state after the die 1410, the pillars
1412, the non-conductive layer 1400 and the conductive interconnect
1404 are coupled to a substrate 1420. The non-conductive layer 1400
may be a photosensitive fill. In some implementations, the
substrate 1420 (e.g., package substrate, interposer) is similar to
the substrate 501 as shown and described in FIGS. 5-6. As shown at
stage 8, the conductive interconnect 1404 is coupled to an
interconnect (e.g., substrate interconnect, surface interconnect,
embedded interconnect) of the substrate, in a manner as described
above in at least FIGS. 5-6.
Exemplary Method for Providing/Fabricating an Integrated Device
Package Comprising a Photosensitive Fill
[0079] FIG. 15 illustrates an exemplary flow diagram of a method
1500 for providing/fabricating an integrated device package that
includes a photosensitive fill. In some implementations, the method
of FIG. 15 may be used to provide/fabricate the integrated device
package that includes a photosensitive fill of FIGS. 4-8 and/or
other capacitors in the present disclosure.
[0080] It should be noted that the flow diagram of FIG. 15 may
combine one or more step and/or processes in order to simplify
and/or clarify the method for providing an integrated device
package. In some implementations, the order of the processes may be
changed or modified.
[0081] The method provides (at 1505) provides a non-conductive
layer and couples the non-conductive layer to a carrier. The
non-conductive layer may be a photosensitive layer. A
photosensitive layer may be a material that is photo-etchable. The
non-conductive layer may be a non-conductive film.
[0082] The method couples (at 1510) a photo resist mask layer to
the non-conductive layer. The photo resist mask layer may include a
pattern.
[0083] The method also forms (at 1515) cavities in the
non-conductive layer. In some implementations, the cavities are
formed after a photo-etching process, where the non-conductive
layer is exposed to a light (e.g., UV light) through the photo
resist mask layer, and portions of the non-conductive layer are
removed (e.g., washed away).
[0084] The method removes (at 1520) the photo resist mask layer,
leaving the remaining non-conductive layer and the carrier.
[0085] The method then forms (at 1525) a conductive interconnect in
the cavities of the non-conductive layer. Different implementations
may use different materials for the conductive interconnect. In
some implementations, the conductive interconnect is a paste (e.g.,
copper paste) and/or solder (e.g., cured solder, enhanced solder
comprising a polymeric material). In some implementations, the
conductive interconnect is formed in the cavities using a screen
printing process. In some implementations, the conductive
interconnect may be cured.
[0086] It should be noted that different implementations may
provide different levels or amounts of conductive materials to form
the conductive interconnect. In some implementations, the cavities
of the non-conductive layer are completely filled with the
conductive material to form the conductive interconnect. In other
implementations, the cavities of the non-conductive layer are
partially filled with the conductive material to form the
conductive interconnect. The conductive material in the cavities
may move and shift within the cavities of the non-conductive
layer.
[0087] The method couples (at 1530) a die comprising pillars to the
non-conductive layer and the conductive interconnect. The pillars
of the die are coupled to the conductive interconnect.
[0088] The method removes (at 1535) the carrier, leaving behind the
die, the pillars, the non-conductive layer and the conductive
interconnect.
[0089] The method couples (at 1540) the die, the pillars, the
non-conductive layer and the conductive interconnect to a
substrate. The non-conductive layer may be a photosensitive fill.
In some implementations, the substrate (e.g., package substrate,
interposer) is similar to the substrate 501 as shown and described
in FIGS. 5-6. The conductive interconnect is coupled to an
interconnect (e.g., substrate interconnect surface interconnect,
embedded interconnect) of the substrate, in a manner as described
above in at least FIGS. 5-6.
Exemplary Sequence for Providing/Fabricating an Integrated Device
Package Comprising a Photosensitive Fill
[0090] In some implementations, providing/fabricating an integrated
device package that includes a photosensitive fill includes several
processes. FIG. 16 (which includes FIGS. 16A-16B) illustrates
another exemplary sequence for providing/fabricating an integrated
device package that includes a photosensitive fill. In some
implementations, the sequence of FIGS. 16A-16B may be used to
provide/fabricate the integrated device package of FIGS. 4-8 and/or
other integrated device packages described in the present
disclosure. However, for the purpose of simplification, FIGS.
16A-16B will be described in the context of providing/fabricating
the integrated device package of FIG. 6.
[0091] It should be noted that the sequence of FIGS. 16A-16B may
combine one or more stages in order to simplify and/or clarify the
sequence for providing an integrated device. In some
implementations, the order of the processes may be changed or
modified.
[0092] Stage 1, as shown in FIG. 16A, illustrates a state after a
non-conductive layer 1600 is provided and coupled to a carrier
1601. The non-conductive layer 1600 may be a photosensitive layer.
A photosensitive layer may be a material that is photo-etchable.
The non-conductive layer 1600 may be a non-conductive film.
[0093] Stage 2 illustrates a state after a photo resist mask layer
1602 is formed and coupled to the non-conductive layer 1600. The
photo resist mask layer 1602 may include a pattern, as illustrated
by the cavities in the photo resist mask layer 1602.
[0094] Stage 3 illustrates a state after cavities are formed in the
non-conductive layer 1600. In some implementations, the cavities
are formed after a photo-etching process, where the non-conductive
layer 1600 is exposed to a light (e.g., UV light) through the photo
resist mask layer 1602, and portions of the non-conductive layer
1600 are removed (e.g., washed away).
[0095] Stage 4 illustrates a state after the photo resist mask
layer 1602 is uncoupled (e.g., removed, lift off) from the
non-conductive layer 1600, leaving the remaining non-conductive
layer 1600 and the carrier 1601.
[0096] Stage 5 illustrates a state after a conductive interconnect
1604 is formed in the cavities (e.g., cavity 1603) of the
non-conductive layer 1600. Different implementations may use
different materials for the conductive interconnect 1604. In some
implementations, the conductive interconnect 1604 is a paste (e.g.,
copper paste) and/or solder (e.g., cured solder, enhanced solder
comprising a polymeric material). In some implementations, the
conductive interconnect 1604 is formed in the cavities using a
screen printing process. In some implementations, the conductive
interconnect 1604 may be cured.
[0097] It should be noted that different implementations may
provide different levels or amounts of conductive materials to form
the conductive interconnect 1604. In some implementations, the
cavities of the non-conductive layer 1600 are completely filled
with the conductive material to form the conductive interconnect
1604. In other implementations, the cavities of the non-conductive
layer 1600 are partially filled with the conductive material to
form the conductive interconnect 1604. The conductive material in
the cavities may move and shift within the cavities of the
non-conductive layer 1600.
[0098] Stage 6, as shown in FIG. 16B, illustrates a state after the
non-conductive layer 1600, the conductive interconnect 1604, and
the carrier 1601 are flipped upside down.
[0099] Stage 7 illustrates a state after the flipped non-conductive
layer 1600, the conductive interconnect 1604, and the carrier 1601
are coupled to the substrate 1620. In some implementations, the
substrate 1620 (e.g., package substrate, interposer) is similar to
the substrate 501 as shown and described in FIGS. 5-6. As shown at
stage 7, the conductive interconnect 1604 is coupled to an
interconnect (e.g., substrate interconnect, surface interconnect,
embedded interconnect) of the substrate, in a manner as described
above in at least FIGS. 5-6.
[0100] Stage 8 illustrates a state after the carrier 1601 is
uncoupled (e.g., removed, lift-off) from the non-conductive layer
1600 and the conductive interconnect 1604, leaving behind the
non-conductive layer 1600, the conductive interconnect 1604 and the
substrate 1620.
[0101] Stage 9 illustrates a state after a die 1610 and the pillars
1612 are coupled to the non-conductive layer 1600 and the
conductive interconnect 1604. The non-conductive layer 1600 may be
a photosensitive fill.
Exemplary Method for Providing/Fabricating an Integrated Device
Package Comprising a Photosensitive Fill
[0102] FIG. 17 illustrates an exemplary flow diagram of a method
1700 for providing/fabricating an integrated device package that
includes a photosensitive fill. In some implementations, the method
of FIG. 17 may be used to provide/fabricate the integrated device
package that includes a photosensitive fill of FIGS. 4-8 and/or
other capacitors in the present disclosure.
[0103] It should be noted that the flow diagram of FIG. 17 may
combine one or more step and/or processes in order to simplify
and/or clarify the method for providing an integrated device
package. In some implementations, the order of the processes may be
changed or modified.
[0104] The method provides (at 1705) provides a non-conductive
layer and couples the non-conductive layer to a carrier. The
non-conductive layer may be a photosensitive layer. A
photosensitive layer may be a material that is photo-etchable. The
non-conductive layer may be a non-conductive film.
[0105] The method couples (at 1710) a photo resist mask layer to
the non-conductive layer. The photo resist mask layer may include a
pattern.
[0106] The method also forms (at 1715) cavities in the
non-conductive layer. In some implementations, the cavities are
formed after a photo-etching process, where the non-conductive
layer is exposed to a light (e.g., UV light) through the photo
resist mask layer, and portions of the non-conductive layer are
removed (e.g., washed away).
[0107] The method removes (at 1720) the photo resist mask layer,
leaving the remaining non-conductive layer and the carrier.
[0108] The method then forms (at 1725) a conductive interconnect in
the cavities of the non-conductive layer. Different implementations
may use different materials for the conductive interconnect. In
some implementations, the conductive interconnect is a paste (e.g.,
copper paste) and/or solder (e.g., cured solder, enhanced solder
comprising a polymeric material). In some implementations, the
conductive interconnect is formed in the cavities using a screen
printing process. In some implementations, the conductive
interconnect may be cured.
[0109] It should be noted that different implementations may
provide different levels or amounts of conductive materials to form
the conductive interconnect. In some implementations, the cavities
of the non-conductive layer are completely filled with the
conductive material to form the conductive interconnect. In other
implementations, the cavities of the non-conductive layer are
partially filled with the conductive material to form the
conductive interconnect. The conductive material in the cavities
may move and shift within the cavities of the non-conductive
layer.
[0110] The method couples (at 1730) the non-conductive layer and
the conductive interconnect to a substrate. The non-conductive
layer may be a photosensitive fill. In some implementations, the
substrate (e.g., package substrate, interposer) is similar to the
substrate 501 as shown and described in FIGS. 5-6. The conductive
interconnect is coupled to an interconnect (e.g., substrate
interconnect, surface interconnect, embedded interconnect) of the
substrate, in a manner as described above in at least FIGS.
5-6.
[0111] The method removes (at 1735) the carrier, leaving behind the
non-conductive layer, the conductive interconnect, and the
substrate.
[0112] The method couples (at 1740) a die comprising pillars to the
non-conductive layer, the conductive interconnect, and the
substrate. The pillars of the die are coupled to the conductive
interconnect, which is coupled to interconnects of the
substrate.
Exemplary Semi-Additive Patterning (SAP) Process
[0113] Various interconnects (e.g., traces, vias, pads) are
described in the present disclosure. These interconnects may be
formed in the package substrate and/or the redistribution portion
of the integrated device package. In some implementations, these
interconnects may includes one or more metal layers. For example,
in some implementations, these interconnects may include a first
metal seed layer and a second metal layer. The metal layers may be
provided (e.g., formed) using different plating processes. Below
are detailed examples of interconnects (e.g., traces, vias, pads)
with seed layers and how these interconnects may be formed using
different plating processes.
[0114] Different implementations may use different processes to
form and/or fabricate the metal layers (e.g., interconnects,
redistribution layer, under bump metallization layer, protrusion).
In some implementations, these processes include a semi-additive
patterning (SAP) process and/or a damascene process. These various
different processes are further described below.
[0115] FIG. 18 illustrates a sequence for forming an interconnect
using a semi-additive patterning (SAP) process to provide and/or
form an interconnect in one or more dielectric layer(s). As shown
in FIG. 18, stage 1 illustrates a state of an integrated device
(e.g., substrate) after a dielectric layer 1802 is provided (e.g.,
formed). In some implementations, stage 1 illustrates that the
dielectric layer 1802 includes a first metal layer 1804. The first
metal layer 1804 is a seed layer in some implementations. In some
implementations, the first metal layer 1804 may be provided (e.g.,
formed) on the dielectric layer 1802 after the dielectric layer
1802 is provided (e.g., received or formed). Stage 1 illustrates
that the first metal layer 1804 is provided (e.g., formed) on a
first surface of the dielectric layer 1802. In some
implementations, the first metal layer 1804 is provided by using a
deposition process (e.g., PVD, CVD, plating process).
[0116] Stage 2 illustrates a state of the integrated device after a
photo resist layer 1806 (e.g., photo develop resist layer) is
selectively provided (e.g., formed) on the first metal layer 1804.
In some implementations, selectively providing the resist layer
1806 includes providing a first resist layer 1806 on the first
metal layer 1804 and selectively removing portions of the resist
layer 1806 by developing (e.g., using a development process). Stage
2 illustrates that the resist layer 1806 is provided such that a
cavity 1808 is formed.
[0117] Stage 3 illustrates a state of the integrated device after a
second metal layer 1810 is formed in the cavity 1808. In some
implementations, the second metal layer 1810 is formed over an
exposed portion of the first metal layer 1804. In some
implementations, the second metal layer 1810 is provided by using a
deposition process (e.g., plating process).
[0118] Stage 4 illustrates a state of the integrated device after
the resist layer 1806 is removed. Different implementations may use
different processes for removing the resist layer 1806.
[0119] Stage 5 illustrates a state of the integrated device after
portions of the first metal layer 1804 are selectively removed. In
some implementations, one or more portions of the first metal layer
1804 that is not covered by the second metal layer 1810 is removed.
As shown in stage 5, the remaining first metal layer 1804 and the
second metal layer 1810 may form and/or define an interconnect 1812
(e.g., trace, vias, pads) in an integrated device and/or a
substrate. In some implementations, the first metal layer 1804 is
removed such that a dimension (e.g., length, width) of the first
metal layer 1804 underneath the second metal layer 1810 is about
the same or smaller than a dimension (e.g., length, width) of the
second metal layer 1810, which can result in an undercut, as shown
at stage 5 of FIG. 18. In some implementations, the above mentioned
processes may be iterated several times to provide and/or form
several interconnects in one or more dielectric layers of an
integrated device and/or substrate.
[0120] FIG. 19 illustrates a flow diagram for a method for using a
(SAP) process to provide and/or form an interconnect in one or more
dielectric layer(s). The method provides (at 1905) a dielectric
layer (e.g., dielectric layer 1802). In some implementations,
providing the dielectric layer includes forming the dielectric
layer. In some implementations, providing the dielectric layer
includes forming a first metal layer (e.g., first metal layer
1804). The first metal layer is a seed layer in some
implementations. In some implementations, the first metal layer may
be provided (e.g., formed) on the dielectric layer after the
dielectric layer is provided (e.g., received or formed). In some
implementations, the first metal layer is provided by using a
deposition process (e.g., physical vapor deposition (PVD) or
plating process).
[0121] The method selectively provides (at 1910) a photo resist
layer (e.g., a photo develop resist layer 1806) on the first metal
layer. In some implementations, selectively providing the resist
layer includes providing a first resist layer on the first metal
layer and selectively removing portions of the resist layer (which
provides one or more cavities).
[0122] The method then provides (at 1915) a second metal layer
(e.g., second metal layer 1810) in the cavity of the photo resist
layer. In some implementations, the second metal layer is formed
over an exposed portion of the first metal layer. In some
implementations, the second metal layer is provided by using a
deposition process (e.g., plating process).
[0123] The method further removes (at 1920) the resist layer.
Different implementations may use different processes for removing
the resist layer. The method also selectively removes (at 1925)
portions of the first metal layer. In some implementations, one or
more portions of the first metal layer that is not covered by the
second metal layer are removed. In some implementations, any
remaining first metal layer and second metal layer may form and/or
define one or more interconnects (e.g., trace, vias, pads) in an
integrated device and/or a substrate. In some implementations, the
above mentioned method may be iterated several times to provide
and/or form several interconnects in one or more dielectric layers
of an integrated device and/or substrate.
Exemplary Damascene Process
[0124] FIG. 20 illustrates a sequence for forming an interconnect
using a damascene process to provide and/or form an interconnect in
a dielectric layer. As shown in FIG. 20, stage 1 illustrates a
state of an integrated device after a dielectric layer 2002 is
provided (e.g., formed). In some implementations, the dielectric
layer 2002 is an inorganic layer (e.g., inorganic film).
[0125] Stage 2 illustrates a state of an integrated device after a
cavity 2004 is formed in the dielectric layer 2002. Different
implementations may use different processes for providing the
cavity 2004 in the dielectric layer 2002.
[0126] Stage 3 illustrates a state of an integrated device after a
first metal layer 2006 is provided on the dielectric layer 2002. As
shown in stage 3, the first metal layer 2006 provided on a first
surface of the dielectric layer 2002. The first metal layer 2006 is
provided on the dielectric layer 2002 such that the first metal
layer 2006 takes the contour of the dielectric layer 2002 including
the contour of the cavity 2004. The first metal layer 2006 is a
seed layer in some implementations. In some implementations, the
first metal layer 2006 is provided by using a deposition process
(e.g., physical vapor deposition (PVD), Chemical Vapor Deposition
(CVD) or plating process).
[0127] Stage 4 illustrates a state of the integrated device after a
second metal layer 2008 is formed in the cavity 2004 and a surface
of the dielectric layer 2002. In some implementations, the second
metal layer 2008 is formed over an exposed portion of the first
metal layer 2006. In some implementations, the second metal layer
2008 is provided by using a deposition process (e.g., plating
process).
[0128] Stage 5 illustrates a state of the integrated device after
the portions of the second metal layer 2008 and portions of the
first metal layer 2006 are removed. Different implementations may
use different processes for removing the second metal layer 2008
and the first metal layer 2006. In some implementations, a chemical
mechanical planarization (CMP) process is used to remove portions
of the second metal layer 2008 and portions of the first metal
layer 2006. As shown in stage 5, the remaining first metal layer
2006 and the second metal layer 2008 may form and/or define an
interconnect 2012 (e.g., trace, vias, pads) in an integrated device
and/or a substrate. As shown in stage 5, the interconnect 2012 is
formed in such a way that the first metal layer 2006 is formed on
the base portion and the side portion(s) of the second metal layer
2010. In some implementations, the cavity 2004 may include a
combination of trenches and/or holes in two levels of dielectrics
so that via and interconnects (e.g., metal traces) may be formed in
a single deposition step. In some implementations, the above
mentioned processes may be iterated several times to provide and/or
form several interconnects in one or more dielectric layers of an
integrated device and/or substrate.
[0129] FIG. 21 illustrates a flow diagram of a method 2100 for
forming an interconnect using a damascene process to provide and/or
form an interconnect in a dielectric layer. The method provides (at
2105) a dielectric layer (e.g., dielectric layer 2002). In some
implementations, providing a dielectric layer includes forming a
dielectric layer. In some implementations, providing a dielectric
layer includes receiving a dielectric layer from a supplier. In
some implementations, the dielectric layer is an inorganic layer
(e.g., inorganic film).
[0130] The method forms (at 2110) at least one cavity (e.g., cavity
2004) in the dielectric layer. Different implementations may use
different processes for providing the cavity in the dielectric
layer.
[0131] The method provides (at 2115) a first metal layer (e.g.,
first metal layer 2006) on the dielectric layer. In some
implementations, the first metal layer is provided (e.g., formed)
on a first surface of the dielectric later. In some
implementations, the first metal layer is provided on the
dielectric layer such that the first metal layer takes the contour
of the dielectric layer including the contour of the cavity. The
first metal layer is a seed layer in some implementations. In some
implementations, the first metal layer 2006 is provided by using a
deposition process (e.g., PVD, CVD or plating process).
[0132] The method provides (at 2120) a second metal layer (e.g.,
second metal layer 2008) in the cavity and a surface of the
dielectric layer. In some implementations, the second metal layer
is formed over an exposed portion of the first metal layer. In some
implementations, the second metal layer is provided by using a
deposition process (e.g., plating process). In some
implementations, the second metal layer is similar or identical to
the first metal layer. In some implementations, the second metal
layer is different than the first metal layer.
[0133] The method then removes (at 2125) portions of the second
metal layer and portions of the first metal layer. Different
implementations may use different processes for removing the second
metal layer and the first metal layer. In some implementations, a
chemical mechanical planarization (CMP) process is used to remove
portions of the second metal layer and portions of the first metal
layer. In some implementations, the remaining first metal layer and
the second metal layer may form and/or define an interconnect
(e.g., interconnect 2012). In some implementations, an interconnect
may include one of at least a trace, a via, and/or a pad) in an
integrated device and/or a substrate. In some implementations, the
interconnect is formed in such a way that the first metal layer is
formed on the base portion and the side portion(s) of the second
metal layer. In some implementations, the above mentioned method
may be iterated several times to provide and/or form several
interconnects in one or more dielectric layers of an integrated
device and/or substrate.
Exemplary Electronic Devices
[0134] FIG. 22 illustrates various electronic devices that may be
integrated with any of the aforementioned integrated device,
semiconductor device, integrated circuit, die, interposer, package
or package-on-package (PoP). For example, a mobile telephone 2202,
a laptop computer 2204, and a fixed location terminal 2206 may
include an integrated device 2200 as described herein. The
integrated device 2200 may be, for example, any of the integrated
circuits, dice, packages, package-on-packages described herein. The
devices 2202, 2204, 2206 illustrated in FIG. 22 are merely
exemplary. Other electronic devices may also feature the integrated
device 2200 including, but not limited to, mobile devices,
hand-held personal communication systems (PCS) units, portable data
units such as personal digital assistants, global positioning
system (GPS) enabled devices, navigation devices, set top boxes,
music players, video players, entertainment units, fixed location
data units such as meter reading equipment, communications devices,
smartphones, wearable devices, tablet computers or any other device
that stores or retrieves data or computer instructions, or any
combination thereof.
[0135] One or more of the components, steps, features, and/or
functions illustrated in FIGS. 4, 5, 6, 7, 8, 9A-9B, 10, 11A-11B,
12, 13, 14, 15, 16, 17, 18, 19, 20, 21 and/or 22 may be rearranged
and/or combined into a single component, step, feature or function
or embodied in several components, steps, or functions. Additional
elements, components, steps, and/or functions may also be added
without departing from the disclosure. It should also be noted that
FIGS. 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14A-14B, 15, 16A-16B, 17,
18, 19, 20, 21 and/or 22 and its corresponding description in the
present disclosure is not limited to dies and/or ICs. In some
implementations, FIGS. 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14A-14B,
15, 16A-16B, 17, 18, 19, 20, 21 and/or 22 and its corresponding
description may be used to manufacture, create, provide, and/or
produce integrated devices. In some implementations, an integrated
device may include a die, a die package, an integrated circuit
(IC), an integrated device package, a wafer, a semiconductor
device, a package on package, and/or an interposer.
[0136] The word "exemplary" is used herein to mean "serving as an
example, instance, or illustration." Any implementation or aspect
described herein as "exemplary" is not necessarily to be construed
as preferred or advantageous over other aspects of the disclosure.
Likewise, the term "aspects" does not require that all aspects of
the disclosure include the discussed feature, advantage or mode of
operation. The term "coupled" is used herein to refer to the direct
or indirect coupling between two objects. For example, if object A
physically touches object B, and object B touches object C, then
objects A and C may still be considered coupled to one another-even
if they do not directly physically touch each other.
[0137] A `set` of objects may include one or more objects. For
example, a set of vias may include may include one or more vias. A
set of interconnects may include one or more interconnects.
[0138] Also, it is noted that the embodiments may be described as a
process that is depicted as a flowchart, a flow diagram, a
structure diagram, or a block diagram. Although a flowchart may
describe the operations as a sequential process, many of the
operations can be performed in parallel or concurrently. In
addition, the order of the operations may be re-arranged. A process
is terminated when its operations are completed.
[0139] The various features of the disclosure described herein can
be implemented in different systems without departing from the
disclosure. It should be noted that the foregoing aspects of the
disclosure are merely examples and are not to be construed as
limiting the disclosure. The description of the aspects of the
present disclosure is intended to be illustrative, and not to limit
the scope of the claims. As such, the present teachings can be
readily applied to other types of apparatuses and many
alternatives, modifications, and variations will be apparent to
those skilled in the art.
* * * * *