U.S. patent application number 15/047056 was filed with the patent office on 2016-06-09 for substrate treating apparatus with parallel substrate treatment lines.
The applicant listed for this patent is SCREEN Semiconductor Solutions Co., Ltd.. Invention is credited to Yoshiteru Fukutomi, Yasuo Kawamatsu, Tsuyoshi Mitsuhashi, Kenya Morinishi, Hiromichi Nagashima, Hiroyuki Ogura.
Application Number | 20160163573 15/047056 |
Document ID | / |
Family ID | 40796579 |
Filed Date | 2016-06-09 |
United States Patent
Application |
20160163573 |
Kind Code |
A1 |
Ogura; Hiroyuki ; et
al. |
June 9, 2016 |
SUBSTRATE TREATING APPARATUS WITH PARALLEL SUBSTRATE TREATMENT
LINES
Abstract
A substrate treating apparatus for treating substrates includes
a plurality of substrate treatment lines arranged vertically for
carrying out plural types of treatment on the substrates while
transporting the substrates substantially horizontally, and a
controller for changing processes of treatment carried out on the
substrates for each of the substrate treatment lines. By changing
the processes of treatment carried out for the substrates for each
substrate treatment line, the processes of treatment carried out
for the substrates can be changed for each substrate conveniently.
Thus, a plurality of different processes of treatment corresponding
to the number of substrate treatment lines can be carried out in
parallel for the respective substrates.
Inventors: |
Ogura; Hiroyuki; (Kyoto,
JP) ; Mitsuhashi; Tsuyoshi; (Kyoto, JP) ;
Fukutomi; Yoshiteru; (Kyoto, JP) ; Morinishi;
Kenya; (Kyoto, JP) ; Kawamatsu; Yasuo; (Kyoto,
JP) ; Nagashima; Hiromichi; (Kyoto, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SCREEN Semiconductor Solutions Co., Ltd. |
Kyoto |
|
JP |
|
|
Family ID: |
40796579 |
Appl. No.: |
15/047056 |
Filed: |
February 18, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12343292 |
Dec 23, 2008 |
9299596 |
|
|
15047056 |
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Current U.S.
Class: |
118/66 |
Current CPC
Class: |
H01L 21/67173 20130101;
H01L 21/6715 20130101; H01L 21/67276 20130101; B05C 9/14 20130101;
B05C 9/12 20130101; H01L 21/67196 20130101; H01L 21/67225 20130101;
H01L 21/67178 20130101; B05C 13/00 20130101; H01L 21/67742
20130101; B05C 13/02 20130101 |
International
Class: |
H01L 21/67 20060101
H01L021/67; B05C 9/12 20060101 B05C009/12; B05C 13/00 20060101
B05C013/00; B05C 9/14 20060101 B05C009/14 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 28, 2007 |
JP |
2007-340428 |
Claims
1. A substrate treating apparatus comprising: a treating block; the
treating block including: a plurality of stories for performing
coating treatment of substrates; and a plurality of stories for
performing developing treatment of the substrates; each of the
stories for performing coating treatment of the substrates having:
coating units for performing coating treatment of the substrates;
heat-treating units for performing heat treatment of the
substrates; and a first main transport mechanism disposed in a
transporting space for transporting the substrates to the coating
units and the heat-treating units; and each of the stories for
performing developing treatment of the substrates having:
developing units for performing developing treatment of the
substrates; heat-treating units for performing heat treatment of
the substrates; and a second main transport mechanism disposed in a
transporting space for transporting the substrates to the
developing units and the heat-treating units.
2. The apparatus according to claim 1, wherein the treating block
is rectangular in plan view.
3. The apparatus according to claim 1, wherein: the first main
transport mechanism, the coating units and the heat-treating units
are in same layout in plan view for the respective stories for
performing coating treatment; the coating units are in same layout
in side view for the respective stories for performing coating
treatment; the heat-treating units are in same layout in side view
for the respective stories for performing coating treatment; the
second main transport mechanism, the developing units and the
heat-treating units are in same layout in plan view for the
respective stories for performing developing treatment; the
developing units are in same layout in side view for the respective
stories for performing developing treatment; and the heat-treating
units are in same layout in side view for the respective stories
for performing developing treatment.
4. The apparatus according to claim 1, wherein: processes for
treating the substrates are the same for the respective stories for
performing coating treatment; and processes for treating the
substrates are the same for the respective stories for performing
developing treatment.
5. The apparatus according to claim 1, further comprising: a first
gas supply pipe for supplying a clean gas into the transporting
space of each of the stories for performing coating treatment of
the substrates; and a second gas supply pipe for supplying the
clean gas into the coating units; wherein the second gas supply
pipe has an end thereof connected to the first gas supply pipe.
6. The apparatus according to claim 5, wherein the end of the
second gas supply pipe is connected to the first gas supply pipe in
a position lower than any one of the stories for performing coating
treatment of the substrates.
7. The apparatus according to claim 1, further comprising: a first
gas exhaust pipe for exhausting gas from the transporting space of
each of the stories for performing coating treatment of the
substrates; and a second gas exhaust pipe for exhausting gas from
the coating units; wherein the second gas exhaust pipe has an end
thereof connected to the first gas exhaust pipe.
8. The apparatus according to claim 1, further comprising: a gas
supply pipe for supplying a clean gas into the coating units; and a
pit portion formed laterally of the coating units and extending
vertically; wherein the pit portion accommodates the gas supply
pipe extending vertically, and at least one of treating solution
piping or electric wiring.
9. The apparatus according to claim 1, further comprising: a gas
exhaust pipe for exhausting gas from the coating units; and a pit
portion formed laterally of the coating units and extending
vertically; wherein the pit portion accommodates the gas exhaust
pipe extending vertically, and at least one of treating solution
piping or electric wiring.
10. The apparatus according to claim 1, wherein the first main
transport mechanism provided on each of the stories for performing
coating treatment of the substrates includes: third guide rails; a
fourth guide rail; a base; a turntable; and two holding arms;
wherein the third guide rails are arranged to guide the fourth
guide rail vertically; wherein the fourth guide rail is arranged to
guide the base horizontally; wherein the turntable is mounted on
the base to be rotatable about a vertical axis; wherein the two
holding arms are each mounted on the turntable to be horizontally
movable for holding the substrates; and wherein the third guide
rails are arranged adjacent to the coating units.
11. The apparatus according to claim 1, further comprising an
exhaust unit disposed at a bottom of the transporting space of each
of the stories for performing coating treatment of the substrates,
for exhausting gas from the transporting space of each of the
stories for performing coating treatment of the substrates.
12. The apparatus according to claim 1, wherein: the coating units
are arranged on one side of the transporting space of each of the
stories for performing coating treatment of the substrates; and the
heat-treating units of each of the stories for performing coating
treatment of the substrates are arranged on the other side of the
transporting space of each of the stories for performing coating
treatment of the substrates.
13. The apparatus according to claim 1, further comprising: a first
gas supply pipe for supplying a clean gas into the transporting
space of each of the stories for performing developing treatment of
the substrates; and a second gas supply pipe for supplying the
clean gas into the developing units; wherein the second gas supply
pipe has an end thereof connected to the first gas supply pipe.
14. The apparatus according to claim 13, wherein the end of the
second gas supply pipe is connected to the first gas supply pipe in
a position lower than any one of the stories for performing
developing treatment of the substrates.
15. The apparatus according to claim 1, further comprising: a first
gas exhaust pipe for exhausting gas from the transporting space of
each of the stories for performing developing treatment of the
substrates; and a second gas exhaust pipe for exhausting gas from
the developing units; wherein the second gas exhaust pipe has an
end thereof connected to the first gas exhaust pipe.
16. The apparatus according to claim 1, further comprising: a gas
supply pipe for supplying a clean gas into the developing units;
and a pit portion formed laterally of the developing units and
extending vertically; wherein the pit portion accommodates the gas
supply pipe extending vertically, and at least one of treating
solution piping or electric wiring.
17. The apparatus according to claim 1, further comprising: a gas
exhaust pipe for exhausting gas from the developing units; and a
pit portion formed laterally of the developing units and extending
vertically; wherein the pit portion accommodates the gas exhaust
pipe extending vertically, and at least one of treating solution
piping or electric wiring.
18. The apparatus according to claim 1, wherein the second main
transport mechanism provided on each of the stories for performing
developing treatment of the substrates includes: third guide rails;
a fourth guide rail; a base; a turntable; and two holding arms;
wherein the third guide rails are arranged to guide the fourth
guide rail vertically; wherein the fourth guide rail is arranged to
guide the base horizontally; wherein the turntable is mounted on
the base to be rotatable about a vertical axis; wherein the two
holding arms are each mounted on the turntable to be horizontally
movable for holding the substrates; and wherein the third guide
rails are arranged adjacent to the developing units.
19. The substrate treating apparatus according to claim 1, further
comprising an exhaust unit disposed at a bottom of the transporting
space of each of the stories for performing developing treatment of
the substrates, for exhausting gas from the transporting space of
each of the stories for performing developing treatment of the
substrates.
20. The apparatus according to claim 1, wherein: the developing
units are arranged on one side of the transporting space of each of
the stories for performing developing treatment of the substrates;
and the heat-treating units of each of the stories for performing
developing treatment of the substrates are arranged on the other
side of the transporting space of each of the stories for
performing developing treatment of the substrates.
Description
CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 12/343,292, filed on Dec. 23, 2008 which claims priority to
Japanese Patent Application JP 2007-340428, filed on Dec. 28, 2007,
the entire disclosures of which are hereby incorporated by
reference in their entirety for all purposes.
BACKGROUND OF THE INVENTION
[0002] This invention relates to a substrate treating apparatus for
performing a series of treatments of substrates such as
semiconductor wafers, glass substrates for liquid crystal displays,
glass substrates for photomasks, and substrates for optical disks
(hereinafter called simply "substrates").
[0003] Conventionally, this type of apparatus includes a substrate
treating apparatus used to form a resist film on substrates, and
develop the substrates exposed in a separate exposing machine. This
apparatus includes a treating section having, arranged therein, a
coating block for carrying out resist film forming treatment, a
developing block for carrying out developing treatment, and so on.
Each such treating block includes a single main transport
mechanism, and various treating units. The main transport mechanism
of each treating block, while transporting substrates to the
treating units in that block, transfers the substrates to and from
the main transport mechanism of another, adjacent treating block.
Thus, a plurality of substrates are successively transported to
various treating units to receive a series of treatments. The
series of treatments includes a process for forming resist film on
the substrates and developing the substrates, for example. This
process includes a plurality of different type treatments
interposed by the exposing treatment in the external exposing
machine. Each main transport mechanism transports the plurality of
substrates in parallel to carry out successively the processes of
treatment for each substrate (as disclosed in Japanese Unexamined
Patent Publication No. 2003-324139, for example).
[0004] The conventional apparatus with such a construction has the
following drawbacks.
[0005] For example, it may be desired to operate the apparatus such
that, while putting certain of the treating units to a test run,
the other treating units are used to carry out a series of
treatments for substrates. Or it may be desired to operate the
apparatus to carry out the process for forming resist film and
developing some substrates, and at the same time to carry out the
process for forming resist film on other substrates. A "process"
here may include a plurality of different types of treatment, or
may include a single treatment.
[0006] However, different processes between the substrates require
different substrate transport paths to the various treating units.
Therefore, the main transport mechanisms cannot transport the
substrates efficiently. With the conventional apparatus, it is
difficult to change the processes of treatment for each substrate.
In other words, the conventional apparatus has difficulty in
proceeding with a plurality of processes in parallel.
SUMMARY OF THE INVENTION
[0007] This invention has been made having regard to the state of
the art noted above, and its object is to provide a substrate
treating apparatus that can change substrate treating processes for
each substrate, thereby proceeding with two or more different
processes of treatment in parallel.
[0008] The above object is fulfilled, according to this invention,
by a substrate treating apparatus comprising a plurality of
substrate treatment lines for carrying out plural types of
treatment on substrates while transporting the substrates
substantially horizontally; and a controller for changing processes
of treatment carried out on the substrates for each of the
substrate treatment lines.
[0009] According to this invention, a plurality of substrate
treatment lines and a controller are provided so that the processes
of treatment carried out for substrates can be changed for each
substrate treatment line. Therefore, according to a substrate
treatment line to transport the substrates, the processes of
treatment carried out for substrates can be changed for each
substrate. This allows the types of processes corresponding to the
number of substrate treatment lines to be carried out for the
substrates in parallel.
[0010] In the invention noted above, the substrate treatment lines
may be arranged vertically. By arranging the plurality of substrate
treatment line in a way to overlap one another in the vertical
direction, an increase in footprint can be avoided.
[0011] In the invention noted above, the controller may be capable
of making processes in the substrate treatment lines different
between the substrate treatment lines; and capable of making
processes in the substrate treatment lines uniform for all the
substrate treatment lines. By making processes for treating the
substrates uniform for all the substrate treatment lines, the
substrates having been treated through the same process can be
obtained from all the substrate treatment lines. By making
processes for treating the substrates different between the
substrate treatment lines, various substrates having been treated
through different processes can be obtained from the substrate
treatment lines.
[0012] In the invention noted above, the controller may be capable
of making the processes in all the substrate treatment lines a
process for forming resist film on the substrates and a process for
developing the substrates. Then, the substrate treatment lines can
conveniently carry out a series of treatments to form resist film
on the substrates and develop the substrates. Thus, substrates
having resist film formed thereon and developed can be obtained
from all the substrate treatment lines.
[0013] In the invention noted above, the controller may be arranged
to cause part of the substrate treatment lines to treat the
substrates in a process in a normal operation, and other of the
substrate treatment lines to treat the substrates in a process in a
test run. The substrate treatment lines can carry out separately
and in parallel a normal operation to treat the substrates in a
process in the normal operation, and a test run to treat the
substrates in a process in the test run. This provides the effect
of inhibiting a lowering of the working rate of this apparatus even
at the time of a test run.
[0014] In the invention noted above, the controller may be capable
of making the process in part of the substrate treatment lines all
of a process for forming resist film on the substrates and
developing the substrates, and making the process in other of the
substrate treatment lines part of the process for forming resist
film on the substrates and developing the substrates. Then,
substrates having resist film formed thereon and developed can be
obtained from part of the substrate treatment lines, and substrates
having undergone part of the series of treatments to form resist
film and develop can be obtained from other of the substrate
treatment lines.
[0015] In the invention noted above, the process in the other of
the substrate treatment lines may be one of a process for forming
resist film on the substrates and a process for developing the
substrates. Then, substrates having resist film formed thereon or
developed substrates can be obtained from the other of the
substrate treatment lines.
[0016] In the invention noted above, the controller may be capable
of causing part of the substrate treatment lines to carry out a
process including a plurality of different type treatments, and
causing other of the substrate treatment lines to carry out a
process including a single treatment. Then, substrates having
received a plurality of different type treatments can be obtained
from part of the substrate treatment lines, and substrates having
received a single treatment can be obtained from other of the
substrate treatment lines.
[0017] In the invention noted above, the process including a single
treatment may be a process including one of resist film material
coating treatment for applying a resist film material to the
substrates, developing treatment for supplying a developer to the
substrates, and heat treatment for heating or cooling the
substrates. Then, substrates having received only the resist film
material coating treatment, developing treatment or heat treatment
can be obtained from the other of the substrate treatment
lines.
[0018] In the invention noted above, the controller may be capable
of causing part of the substrate treatment lines to carry out a
first process including a plurality of different type treatments,
and causing other of the substrate treatment lines to carry out a
second process including a plurality of different type treatments
and different from the first process. Then, part of the substrate
treatment lines and other of the substrate treatment lines can
carry out a plurality of different type treatments different from
each other.
[0019] In the invention noted above, at least one of the first
process and the second process may include at least one of resist
film material coating treatment for applying a resist film material
to the substrates, developing treatment for supplying a developer
to the substrates, and heat treatment for heating or cooling the
substrates. Then, at least one of the substrate treatment lines can
carry out a process relating to the resist film material coating
treatment, a process relating to the developing treatment, or a
process relating to the heat treatment.
[0020] In another aspect of this invention, a substrate treating
apparatus comprises a plurality of treating blocks arranged in
juxtaposition, each having treating units provided on each of
stories arranged vertically for treating substrates, and a main
transport mechanism provided on each of the stories for
transporting the substrates to and from the treating units on each
of the stories, each of the treating blocks being capable of
carrying out a series of treatments for the substrates on each of
the stories, with the substrates transferred between the main
transport mechanisms on the same stories of the treating blocks
adjacent each other; and a controller for controlling each main
transport mechanism to change substrate transport paths to and from
the treating units on each of the stories.
[0021] According to this invention, a plurality of treating blocks
each having a plurality of stories and a controller for changing
substrate transport paths for each of the stories are provided to
change substrate treatment for each story. This allows the types of
treatment corresponding to the number of stories of the treating
blocks to be carried out in parallel.
[0022] In the invention noted above, the controller may be capable
of causing all or part of the series of treatments to be carried
out for the substrates on each of the stories. Then, all of the
series of treatments can be carried out for the substrates on each
story. Part of the series of treatments can be carried out for the
substrates on each story. The controller controls treatment on each
story independently of the other stories. Consequently, desired
treatment can be carried out for the substrates on each story.
[0023] In the invention noted above, on a story having treating
units put to a test run, the controller may be arranged to cause
the substrates to be transported only to the treating units put to
the test run. By transporting the substrates only to the treating
units put to the test run, the quality of treatment given by the
treating units to the substrates can be examined, verified and
checked conveniently.
[0024] In the invention noted above, the apparatus may further
comprise an input unit for inputting information to set substrate
transport paths to each of the stories, wherein the controller is
arranged to change the transport paths on each of the stories based
on the information inputted to the input unit. With the input unit
provided, the controller changes substrate transport paths to the
treating units for each story. Thus, the particulars of the
treatment carried out for the substrates on each story can be
changed simply.
[0025] In the invention noted above, the information inputted to
the input unit may be information on types and an order of
treatment carried out for the substrates on each of the stories.
According to the information on the types and order of treatment
carried out for the substrates on each story, the controller can
change properly the substrate transport paths to the treating units
for each story.
[0026] In the invention noted above, the information inputted to
the input unit may be information identifying treating units put to
a test run. According to the information identifying treating units
put to a test run, the controller can change conveniently the
transport paths on the story where these treating units are
provided. Preferably, for example, the controller transports the
substrates only to these treating units. This is because a test run
can be carried out on these treating units.
[0027] In the invention noted above, the treating blocks may
include a coating block and a developing block. The coating block
has as the treating units coating units for applying a treating
solution to the substrates; and the developing block has as the
treating units developing units for supplying a developer to the
substrates. Then, coating treatment for applying a treating
solution to the substrates and developing treatment for supplying a
developer to the substrates can be carried out on each story of the
treating section.
[0028] In the invention noted above, the controller may be capable
of causing the substrates loaded onto all of the stories of the
coating block to be fed out of the coating block after being
treated in the coating units; and capable of causing the substrates
loaded onto part of the stories of the coating block to be fed out
of the coating block after being treated in the coating units, and
causing the substrates loaded onto other of the stories of the
coating block to be fed out of the coating block without being
transported to the coating units. In the first instance the coating
treatment can be carried out on all the stories of the coating
block. In the second instance while the coating treatment is
carried out on part of the stories of the coating block, the
coating treatment can be omitted on other of the stories of the
coating block.
[0029] In the invention noted above, the controller may be capable
of causing the substrates loaded onto all of the stories of the
developing block to be fed out of the developing block after being
treated in the developing units; and capable of causing the
substrates loaded onto part of the stories of the developing block
to be fed out of the developing block after being treated in the
developing units, and causing the substrates loaded onto other of
the stories of the developing block to be fed out of the developing
block without being transported to the developing units. In the
first instance the developing treatment can be carried out on all
the stories of the developing block. In the second instance while
the developing treatment is carried out on part of the stories of
the developing block, the developing treatment can be omitted on
other of the stories of the developing block.
[0030] This specification discloses an invention directed to the
following substrate treating apparatus:
[0031] (1) The apparatus according to an embodiment wherein each of
the substrate treatment lines includes a plurality of treating
units and main transport mechanisms for transporting the substrates
to and from the treating units. Since each substrate treatment line
has its own treating units and main transport mechanisms, the
controller can conveniently change substrate transport paths to the
treating units for each substrate treatment line.
[0032] (2) The apparatus according to an embodiment wherein the
process in the other of the substrate treatment lines is a process
including a single treatment. Then, substrates having received a
single treatment can be obtained from the other of the substrate
treatment lines.
[0033] (3) The apparatus according to an embodiment wherein the
process including a plurality of different type treatments includes
at least one of resist film material coating treatment for applying
a resist film material to the substrates, developing treatment for
supplying a developer to the substrates, and heat treatment for
heating or cooling the substrates. Then, a process relating to the
resist film material coating treatment, a process relating to the
developing treatment or a process relating to the heat treatment
can be carried out in the part of the substrate treatment lines
which carry out the process including a plurality of different type
treatments.
[0034] (4) The apparatus according to an embodiment wherein the
process including a plurality of different type treatments includes
at least one of resist film material coating treatment for applying
a resist film material to the substrates and developing treatment
for supplying a developer to the substrates. Then, substrates with
resist film formed thereon or developed substrates can be obtained
from the part of the substrate treatment lines which carry out the
process including a plurality of different type treatments.
[0035] (5) The apparatus according to an embodiment wherein a first
process and a second process each includes at least one of resist
film material coating treatment for applying a resist film material
to the substrates, developing treatment for supplying a developer
to the substrates, and heat treatment for heating or cooling the
substrates. Then, each of the different parts of the substrate
treatment lines can carry out a process relating to the resist film
material coating treatment, a process relating to the developing
treatment, or a process relating to the heat treatment.
[0036] (6) The apparatus according to an embodiment wherein a first
process is a process for forming resist film on the substrates and
developing the substrates, and a second process is one of a process
for forming resist film on the substrates and a process for
developing the substrates. Then, substrates having resist film
formed thereon and developed can be obtained from one part of the
substrate treatment lines, while substrates having resist film
formed thereon or developed substrates can be obtained from another
part of the substrate treatment lines.
[0037] (7) The apparatus according to an embodiment wherein one of
a first process and a second process is a process for forming
resist film on the substrates, and another of a first process and a
second process is a process for developing the substrates. Then,
substrates having resist film formed thereon can be obtained from
one part of the substrate treatment lines, while developed
substrates can be obtained from another part of the substrate
treatment lines.
[0038] (8) The apparatus according to an embodiment, wherein in one
instance the controller is capable of causing all the substrate
treatment lines to carry out processes for forming resist film on
the substrates and developing the substrates, including resist film
material coating treatment for applying a resist film material to
the substrates, developing treatment for supplying a developer to
the substrates, and heat treatment for heating or cooling the
substrates, and in another instance is capable of causing part of
the substrate treatment lines to carry out processes for forming
resist film on the substrates and developing the substrates,
including the resist film material coating treatment, the
developing treatment and the heat treatment, and causing another
part of the substrate treatment lines to carry out one of a process
for forming resist film on the substrates, including the resist
film material coating treatment and the heat treatment, and a
process for developing the substrates, including the developing
treatment and the heat treatment. Then, in the first instance
substrates having resist film formed thereon and developed can be
obtained from all the substrate treatment lines. In the second
instance, substrates having resist film formed thereon and
developed can be obtained from a part of the substrate treatment
lines, while substrates having resist film formed thereon or
developed substrates can be obtained from the other of the
substrate treatment lines.
[0039] (9) The apparatus according to an embodiment, wherein the
coating units are resist film coating units for applying a resist
film material to the substrates. Then, the coating block can
conveniently form resist film on the substrates.
[0040] (10) The apparatus according to claim an embodiment, wherein
the coating block further includes, as the treating units,
heat-treating units for heat-treating the substrates, and the
developing block further includes, as the treating units,
heat-treating units for heat-treating the substrates. Then, the
coating block can conveniently proceed with the treatment in the
coating units and heat-treating units. The developing block also
can conveniently proceed with the treatment in the developing units
and heat-treating units.
[0041] (11) The apparatus according to an embodiment, wherein the
coating block and the developing block are arranged adjacent each
other. Then, the processes including the treatments in the coating
units and developing units can be carried out smoothly.
[0042] (12) The apparatus according to (11) above, further
comprising an indexer section disposed adjacent the coating block
for transporting substrates to and from a cassette configured to
store a plurality of substrates, and transferring the substrates to
and from each main transport mechanism of the coating block. Since
the coating block can transfer the substrates to and from the
indexer section, the particulars of treatment on each story can be
changed flexibly.
[0043] (13) The apparatus according to (11) above, further
comprising an interface section disposed adjacent the developing
block for transporting the substrates to and from an exposing
machine provided separately from the apparatus, and transferring
the substrates to and from each main transport mechanism of the
developing block. Since the developing block can transfer the
substrates to and from the interface section, the particulars of
treatment on each story can be changed flexibly.
[0044] (14) An embodiment of a substrate treating apparatus
comprising a plurality of substrate treatment lines arranged
vertically for carrying out a series of treatments on substrates
while transporting the substrates substantially horizontally; and a
controller capable of causing each of the substrate treatment lines
to carry out all of the series of treatments on the substrates, and
to carry out only part of the series of treatments. According to
this embodiment with the plurality of substrate treatment lines and
the controller, each substrate treatment line can be changed
between all of the series of treatments and part of the series of
treatments carried out on the substrates. It is thus possible to
proceed with the types of treatment corresponding to the number of
substrate treatment lines in parallel.
[0045] (15) An embodiment according to (14) above wherein the
controller is capable of causing all of the substrate treatment
lines to carry out all of the series of treatments on the
substrates, and capable of causing part of the substrate treatment
lines to carry out all of the series of treatments on the
substrates, while causing other of the substrate treatment lines to
carry out part of the series of treatments on the substrates. All
of the substrate treatment lines can carry out all of the series of
treatments on the substrates. Part of the substrate treatment lines
can carry out all of the series of treatments on the substrates,
while other of the substrate treatment lines can carry out part of
the series of treatments on the substrates.
[0046] (16) An embodiment according to (14) above wherein the
controller is capable of causing part of the substrate treatment
lines to engage in a normal operation for carrying out all of the
series of treatments on the substrates, and causing other of the
substrate treatment lines to engage in a test run for carrying out
part of the series of treatments on the substrates. Thus, part of
the substrate treatment lines can engage in a normal operation
while other of the substrate treatment lines is put to a test run
so that the other substrate treatment line may be restored to its
normal state.
BRIEF DESCRIPTION OF THE DRAWINGS
[0047] For the purpose of illustrating the invention, there are
shown in the drawings several forms which are presently preferred,
it being understood, however, that the invention is not limited to
the precise arrangement and instrumentalities shown.
[0048] FIG. 1 is a schematic view showing an outline of a substrate
treating apparatus according to this invention;
[0049] FIG. 2 is a schematic view showing an outline of a substrate
treating apparatus according to this invention;
[0050] FIG. 3 is a plan view showing an outline of the substrate
treating apparatus according to this invention;
[0051] FIG. 4 is a schematic side view showing an arrangement of
treating units included in the substrate treating apparatus;
[0052] FIG. 5 is a schematic side view showing an arrangement of
treating units included in the substrate treating apparatus;
[0053] FIG. 6 is a view in vertical section taken on line a-a of
FIG. 3;
[0054] FIG. 7 is a view in vertical section taken on line b-b of
FIG. 3;
[0055] FIG. 8 is a view in vertical section taken on line c-c of
FIG. 3;
[0056] FIG. 9 is a view in vertical section taken on line d-d of
FIG. 3;
[0057] FIG. 10A is a plan view of coating units;
[0058] FIG. 10B is a sectional view of a coating unit;
[0059] FIG. 11 is a perspective view of a main transport
mechanism;
[0060] FIG. 12 is a control block diagram of the substrate treating
apparatus according to the invention;
[0061] FIG. 13 is a flow chart of a series of treatments of
substrates;
[0062] FIG. 14 is a view schematically showing operations repeated
by each transport mechanism;
[0063] FIG. 15 is a flow chart of a series of treatments of
substrates;
[0064] FIG. 16 is a view schematically showing operations repeated
by each transport mechanism;
[0065] FIG. 17 is a schematic view showing an outline of a modified
substrate treating apparatus; and
[0066] FIG. 18 is a schematic view showing an outline of a
substrate treating apparatus in a comparative example.
DETAILED DESCRIPTION OF THE INVENTION
[0067] A preferred embodiment of this invention will be described
in detail hereinafter with reference to the drawings.
[0068] An outline of this embodiment will be described first. FIGS.
1 and 2 are schematic views showing an outline of a substrate
treating apparatus according to an embodiment of this invention.
FIG. 1 shows an example of treating substrates in the same process
through all substrate treatment lines. FIG. 2 shows an example of
treating substrates in different processes through the substrate
treatment lines.
[0069] This embodiment provides a substrate treating apparatus 10
for forming resist film on substrates (e.g. semiconductor wafers)
W, and developing exposed wafers W. The substrate treating
apparatus 10 will be abbreviated hereinafter as the apparatus 10 as
appropriate. This apparatus 10 has two substrate treatment lines Lu
and Ld for performing a plurality of different type treatments for
the wafers W while transporting the wafers W substantially
horizontally. The substrate treatment lines Lu and Ld are arranged
one over the other. The substrate treatment lines Lu and Ld
constitute a treating section 3. In the following description, the
substrate treatment lines Lu and Ld will be referred to simply as
the substrate treatment lines L when they are not distinguished.
This apparatus 10 has an exposing machine EXP, which is separate
from this apparatus 10, disposed adjacent an interface section
described hereinafter. The exposing machine EXP is used to expose
the wafers W.
[0070] The treatment that can be carried out in each substrate
treatment line L is roughly divided into coating treatment, heat
treatment, edge exposure and developing treatment. The coating
treatment includes antireflection film material coating treatment
and resist film material coating treatment. The heat treatment
includes cooling treatment, heating treatment, heating and cooling
treatment, and PEB (Post Exposure Bake) treatment. Although the PEB
treatment is also called post-exposure baking treatment, this
specification uses the term "PEB treatment".
[0071] In FIG. 1, the substrate treatment lines Lu and Ld carry out
the same process of treatment for the wafers W. The process in each
of the substrate treatment lines Lu and Ld includes a plurality of
different type treatments. Specifically, the process in each
substrate treatment line L includes cooling treatment T1,
antireflection film material coating treatment T2, heating and
cooling treatment T3, cooling treatment T4, resist film material
coating treatment T5, heating and cooling treatment T6, cooling
treatment T7, edge exposure T8, PEB treatment T10, cooling
treatment T11, developing treatment T12, heating treatment T13 and
cooling treatment T14, which are carried out in the stated order.
Sign "u" affixed to the various treatments T1-T8 and T10-T14
indicates the treatments carried out in the substrate treatment
line Lu, while sign "d" indicates the treatments carried out in the
substrate treatment line Ld. Inserted after the edge exposure T8
and before the PEB treatment T10 is exposure T9 carried out by the
exposing machine EXP.
[0072] The series of treatments from the cooling treatment T1u to
the edge exposure T8u and from the PEB treatment T10u to the
cooling treatment T14u corresponds to the "process for forming
resist film on the substrates, and for developing the substrates"
in this invention. Similarly, the series of treatments from the
cooling treatment T1d to the edge exposure T8d and from the PEB
treatment T10d to the cooling treatment T14d corresponds to the
"process for forming resist film on the substrates and for
developing the substrates" in this invention. In the following
description, the "process for forming resist film on the substrates
and for developing the substrates" will be called the "coating and
developing process" as appropriate.
[0073] The substrate treatment lines Lu and Ld carry out the
coating and developing process in parallel, thereby to obtain
wafers W with resist film formed thereon and developed from each
substrate treatment line Lu or Ld. In FIG. 1, sign "Wa" is affixed
to wafers W having received the treatment in the coating and
developing process.
[0074] When each process in the substrate treatment line Lu or Ld
is aimed at substrate treatment, the process is one executed during
a normal operation. When each process in the substrate treatment
line Lu or Ld is aimed at checking or testing of treatment quality,
or at a test run of the treating units, the process is one executed
during a test run.
[0075] In FIG. 2, the substrate treatment lines Lu and Ld carry out
different processes. The process in the substrate treatment line Lu
is the coating and developing process. The process in the substrate
treatment line Ld consists of a single treatment (resist film
material coating treatment T21d). Consequently, while wafers W with
resist film formed thereon and developed are obtained from the
substrate treatment line Lu, wafers W having received the resist
film material coating treatment can be obtained from the substrate
treatment line Ld. In FIG. 2, sign "Wa" is affixed to the wafers W
having received the treatment in the coating and developing
process, and sign "Wb" to the wafers W having received the resist
film material coating treatment.
[0076] In the example shown in FIG. 2 also, each process in the
substrate treatment line Lu or Ld aimed at a test run is one
executed during a test run, and that aimed at substrate treatment
is one executed during a normal operation.
[0077] Although other examples of operation in this apparatus are
not illustrated, the processes in the substrate treatment lines Lu
and Ld may be changed as desired. Changes in the processes in the
substrate treatment line Lu and changes in the processes in the
substrate treatment line Ld can be made independently of each
other.
[0078] For example, the processes in the substrate treatment lines
Lu and Ld can be all or part of the coating and developing process.
Part of the coating and developing process may, for example, be a
process for forming resist film on the wafers W (hereinafter called
"resist process" as appropriate), or a process for developing the
wafers W (hereinafter called "developing process" as appropriate).
The resist process may, for example, be a series of treatments from
the cooling treatment T1 to the edge exposure T8. The developing
process may, for example, be a series of treatments from the PEB
treatment T10 to the cooling treatment T14. In addition, part of
the coating and developing process may, for example, include the
resist film material coating treatment T5 and processes relating
thereto, the developing T12 and processes relating thereto, and
heat treatment and processes relating thereto. It is also possible
to select, as desired, processes from the cooling treatment T4 to
the heating and cooling treatment T6, or a process consisting only
of the edge exposure T8.
[0079] From a different viewpoint, each of the processes in the
substrate treatment lines Lu and Ld may be a process consisting of
a single treatment, or a process having a plurality of different
type treatments. The process consisting of a single treatment
includes any one of the treatments T1-T8 and T10-T14. The process
having a plurality of different type treatments may, for example,
include the cooling treatment T14, heating and cooling treatment
T3, and developing treatment T12. The number of treatments included
in the process having a plurality of different type treatments may
be larger or smaller than the number of treatments included in the
coating and developing process. The order of treatments in the
process having a plurality of different type treatments may be the
same as or different from the order of treatments in the coating
and developing process.
[0080] Each process in the substrate treatment lines Lu and Ld may
be a process during a normal operation, or a process during a test
run. Therefore, processes during a test run may be executed on both
substrate treatment lines Lu and Ld.
[0081] This embodiment will now be compared with a comparative
example. FIG. 18 is a schematic view showing an outline of a
substrate treating apparatus in the comparative example. The
substrate treating apparatus shown in FIG. 18 has a single
substrate treatment line Ls. When the coating and developing
process and the process consisting only of resist film material
coating treatment are carried out in parallel in this substrate
treatment line Ls, wafers W are transported along a path shown in
solid lines in FIG. 18 (coating and developing process), while
wafers W are transported along a path shown in dotted lines
(process consisting only of resist film material coating
treatment). When the wafers W are transported alternately along the
two transport paths in the single substrate treatment line Ls as
above, the wafer transporting efficiency falls as a whole, and the
control for transporting the wafers W becomes very complicated. On
the other hand, as shown in FIGS. 1 and 2, it is clear that this
apparatus 10 has a higher wafer transporting efficiency, and that
the control for transporting the wafers W is simpler and
easier.
[0082] Thus, this apparatus 10 with two substrate treatment lines
Lu and Ld can conveniently realize an operation to treat wafers W
in parallel through the same process in the substrate treatment
lines Lu and Ld, and an operation to treat wafers W in parallel
through different processes in the substrate treatment lines Lu and
Ld. In the former case, wafers W treated in the same process can be
obtained from the substrate treatment lines Lu and Ld. In the
latter case, wafers W treated in different processes can be
obtained simultaneously from the substrate treatment lines Lu and
Ld. Further, by selecting the substrate treatment line Lu or Ld for
transporting wafers W, processes of treatment can be varied for
different wafers W.
[0083] This embodiment will be described in greater detail
hereinafter. FIG. 3 is a plan view showing an outline of the
substrate treating apparatus according to this embodiment. FIGS. 4
and 5 are schematic side views showing an arrangement of treating
units included in the substrate treating apparatus. FIGS. 6 through
9 are views in vertical section taken on lines a-a, b-b, c-c and
d-d of FIG. 3, respectively.
[0084] This apparatus 10 includes, besides the treating section 3
described above, an indexer section (hereinafter called "ID
section") 1, and an interface section (hereinafter called "IF
section") 5. The ID section 1 is located adjacent one side of the
treating section 3, and IF section 5 is located adjacent the other
side of the treating section 3. The exposing machine EXP, which is
an external apparatus separate from this apparatus 10, is disposed
adjacent to the IF section 5.
[0085] The ID section 1 receives wafers W transported to the
apparatus 10 from outside, and transfers the wafers W to the
treating section 3. The IF section 5 transfers the wafers W between
the treating section 3 and exposing machine EXP. Each of the ID
section 1, treating section 3 and IF section 5 will be described
hereinafter.
[0086] ID Section 1
[0087] The ID section 1 takes wafers W out of each cassette C,
which stores a plurality of wafers W, and deposits wafers W in the
cassette C. The ID section 1 has a cassette table 9 for receiving
cassettes C. The cassette table 9 can receive four cassettes C as
arranged in a row. The ID section 1 has also an ID transport
mechanism T.sub.ID. The ID transport mechanism T.sub.ID transports
wafers W to and from each cassette C, and transports wafers W to
and from receivers PASS.sub.1 and PASS.sub.3 to be described
hereinafter. As shown in FIG. 6, the ID transport mechanism
T.sub.ID has a movable base 21 for moving horizontally alongside
the cassette table 9 in the direction of arrangement of the
cassettes C, a lift shaft 23 vertically extendible and contractible
relative to the movable base 21, and a holding arm 25 swivelable on
the lift shaft 23, and extendible and retractable radially of the
swivel motion, for holding a wafer W.
[0088] Treating Section 3
[0089] Each substrate treatment line L of the treating section 3 is
arranged to transport wafers W substantially horizontally between
the ID section 1 and IF section 5. Each substrate treatment line L
has main transport mechanisms T for transporting the wafers W. In
this embodiment, each substrate treatment line L has a plurality of
main transport mechanisms T (two for each substrate treatment line
L, and thus a total of four). The plurality of main transport
mechanisms T of each substrate treatment line L are arranged in the
direction in which the wafers W are transported, and the wafers W
can be transferred between the main transport mechanisms T adjacent
each other in the transport direction. Each main transport
mechanism T, while transporting wafers W to various treating units
described hereinafter, transfers wafers W to the other main
transport mechanism T adjacent thereto.
[0090] Specifically, the substrate treatment line Lu includes a
main transport mechanism T.sub.1 and a main transport mechanism
T.sub.2 arranged in a row. The main transport mechanism T.sub.1 is
disposed adjacent the ID section, while the main transport
mechanism T.sub.2 is disposed adjacent the IF section 5. Similarly,
the substrate treatment line Ld includes a main transport mechanism
T.sub.3 and a main transport mechanism T.sub.4 arranged in a row.
The main transport mechanism T.sub.3 is disposed adjacent the ID
section, while the main transport mechanism T.sub.4 is disposed
adjacent the IF section 5.
[0091] In this embodiment, the treating section 3 which has the
above substrate treatment lines L includes a plurality of (two)
treating blocks Ba and Bb arranged side by side (in substantially
the same direction as the transport direction). The treating block
Ba is located adjacent the ID section 1, while the treating block
Bb is located adjacent the IF section 5. Each of the treating
blocks Ba and Bb is vertically divided into a plurality of (two)
stories K. The above main transport mechanism T.sub.1 is disposed
on the upper story K1 of the treating block Ba, while the main
transport mechanism T.sub.3 is disposed on the lower story K3.
Similarly, the main transport mechanism T.sub.2 is disposed on the
upper story K2 of the treating block Bb, while the main transport
mechanism T.sub.4 is disposed on the lower story K4.
[0092] The wafers W can be transferred between the main transport
mechanisms T.sub.1 and T.sub.2 on the same stories K1 and K2 of the
adjoining treating blocks Ba and Bb. The stories K1 and K2
constitute the substrate treatment line Lu. Similarly, the wafers W
can be transferred between the main transport mechanisms T.sub.3
and T.sub.4, and the stories K3 and K4 constitute the substrate
treatment line Ld.
[0093] Treating Section 3--Treating Block Ba
[0094] Receivers PASS.sub.1 and PASS.sub.3 for receiving wafers W
are provided between the ID section 1 and the respective stories K1
and K3 of the treating block Ba. The receiver PASS.sub.1 receives,
as temporarily placed thereon, wafers W passed between the ID
transport mechanism T.sub.ID and the main transport mechanism
T.sub.1. Similarly, the receiver PASS.sub.3 receives, as
temporarily placed thereon, wafers W passed between the ID
transport mechanism T.sub.ID and the main transport mechanism
T.sub.3. Seen in a sectional view, the receiver PASS.sub.1 is
disposed at a height adjacent a lower part of the upper story K2,
while the receiver PASS.sub.3 is disposed at a height adjacent an
upper part of the lower story K3. Thus, the positions of receiver
PASS.sub.1 and receiver PASS.sub.3 are relatively close to each
other for allowing the ID transport mechanism T.sub.ID to move
between the receiver PASS.sub.1 and receiver PASS.sub.3 through
using only a small amount of vertical movement.
[0095] Receivers PASS.sub.2 and PASS.sub.4 for receiving wafers W
are provided also between the treating blocks Ba and Bb. The
receiver PASS.sub.2 is disposed between the story K1 and story K2,
and the receiver PASS.sub.4 between the story K3 and story K4. The
main transport mechanisms T.sub.1 and T.sub.2 transfer wafers W
through the receiver PASS.sub.2, and the main transport mechanisms
T.sub.3 and T.sub.4 through the receiver PASS.sub.4.
[0096] The receiver PASS.sub.1 includes a plurality of receivers
(two in this embodiment). These receivers PASS.sub.1 are arranged
vertically adjacent each other. Of the two receivers PASS.sub.1,
one PASS.sub.1A receives wafers W passed from the ID transport
mechanism T.sub.ID to the main transport mechanism T.sub.1. The
other receiver PASS.sub.1B receives wafers W passed from the main
transport mechanism T.sub.1 to the ID transport mechanism T.sub.ID.
Each of the receivers PASS.sub.2-PASS.sub.4 and receivers
PASS.sub.5 and PASS.sub.E described hereinafter similarly includes
a plurality of (two) receivers, one of which is selected according
to a direction for transferring wafers W. Each of the receivers
PASS.sub.1A and PASS.sub.1B has a sensor (not shown) for detecting
presence or absence of a wafer W. Based on detection signals of
each sensor, the transfer of wafers W by the ID transport mechanism
T.sub.ID and main transport mechanism T.sub.1 is controlled.
Similar sensors are attached also to the receivers
PASS.sub.2-PASS.sub.6, respectively.
[0097] The story K1 will now be described. The main transport
mechanism T.sub.1 is movable in a transporting space A.sub.1
extending substantially through the center of the story K1 and
parallel to the direction of transport. The story K1 has, arranged
thereon, coating units 31 for applying a treating solution to
wafers W, and heat-treating units 41 for heat-treating the wafers
W. The coating units 31 are arranged on one side of the
transporting space A.sub.1, while the heat-treating units 41 are
arranged on the other side thereof.
[0098] The coating units 31 are arranged vertically and
horizontally, each facing the transporting space A.sub.1. In this
embodiment, four coating units 31 in total are arranged in two
columns and two rows.
[0099] The coating units 31 include anti-reflection film coating
units BARC for coating an anti-reflection film material on the
wafers W, and resist film coating units RESIST for coating a resist
film material on the wafers W. In this specification, the treatment
carried out in the anti-reflection film coating units BARC is
referred to as anti-reflection film coating treatment as
appropriate, and the treatment carried out in the resist film
coating units RESIST as resist film coating treatment.
[0100] The plurality of (two) anti-reflection film coating units
BARC are arranged at substantially the same height in the lower
row. The plurality of resist film coating units RESIST are arranged
at substantially the same height in the upper row. No dividing wall
or partition is provided between the antireflection film coating
units BARC. That is, all the antireflection film coating units BARC
are only housed in a common chamber, and the atmosphere around each
antireflection film coating unit BARC is not blocked off (i.e. is
in communication). Similarly, the atmosphere around each resist
film coating unit RESIST is not blocked off.
[0101] Reference is made to FIGS. 10A and 10B. FIG. 10A is a plan
view of the coating units 31. FIG. 10B is a sectional view of a
coating unit 31. Each coating unit 31 includes a spin holder 32 for
holding and spinning a wafer W, a cup 33 surrounding the wafer W,
and a supply device 34 for supplying a treating solution to the
wafer W.
[0102] The supply device 34 includes a plurality of nozzles 35, a
gripper 36 for gripping one of the nozzles 35, and a nozzle moving
mechanism 37 for moving the gripper 36 to move one of the nozzles
35 between a treating position above the wafer W and a standby
position away from above the wafer W. Each nozzle 35 has one end of
a treating solution pipe 38 connected thereto. The treating
solution pipe 38 is arranged movable (flexible) to permit movement
of the nozzle 35 between the standby position and treating
position. The other end of each treating solution pipe 38 is
connected to a treating solution source (not shown). Specifically,
in the case of antireflection film coating units BARC, the treating
solution sources supply different types of treating solution for
antireflection film to the respective nozzles 35. In the case of
resist film coating units RESIST, the treating solution sources
supply different types of resist film material to the respective
nozzles 35.
[0103] The nozzle moving mechanism 37 has first guide rails 37a and
a second guide rail 37b. The first guide rails 37a are arranged
parallel to each other and opposed to each other across the two
cups 33 arranged sideways. The second guide rail 37b is slidably
supported by the two first guide rails 37a and disposed above the
two cups 33. The gripper 36 is slidably supported by the second
guide rail 37b. The first guide rails 37a and second guide rail 37b
take guiding action substantially horizontally and in directions
substantially perpendicular to each other. The nozzle moving
mechanism 37 further includes drive members (not shown) for sliding
the second guide rail 37b, and sliding the gripper 36. The drive
members are operable to move the nozzle 35 gripped by the gripper
36 to the treating positions above the two spin holders 32.
[0104] The plurality of heat-treating units 41 are arranged
vertically and horizontally, each facing the transporting space
A.sub.1. In this embodiment, three heat-treating units 41 can be
arranged horizontally, and five heat-treating units 41 can be
stacked vertically. Each heat-treating unit 41 has a plate 43 for
receiving a wafer W. The heat-treating units 41 include cooling
units CP for cooling wafers W, heating and cooling units PHP for
carrying out heating and cooling treatments continually, and
adhesion units AHL for heat-treating wafers W in an atmosphere of
hexamethyldisilazane (HMDS) vapor in order to promote adhesion of
coating film to the wafers W. As shown in FIG. 5, each heating and
cooling unit PHP has two plates 43, and a local transport mechanism
(not shown) for moving a wafer W between the two plates 43. The
various types of heat-treating units CP, PHP and AHL are arranged
in appropriate positions. In this specification, the treatment
carried out in the heating and cooling units PHP is referred to as
heating and cooling treatment as appropriate.
[0105] The main transport mechanism T.sub.1 will be described
specifically. Reference is made to FIG. 11. FIG. 11 is a
perspective view of the main transport mechanism T.sub.1. The main
transport mechanism T.sub.1 has two third guide rails 51 for
providing vertical guidance, and a fourth guide rail 52 for
providing horizontal guidance. The third guide rails 51 are fixed
opposite each other at one side of the transporting space A1. In
this embodiment, the third guide rails 51 are arranged at the side
adjacent the coating units 31. The fourth guide rail 52 is slidably
attached to the third guide rails 51. The fourth guide rail 52 has
a base 53 slidably attached thereto. The base 53 extends
transversely, substantially to the center of the transporting space
A1. The main transport mechanism T.sub.1 further includes drive
members (not shown) for vertically moving the fourth guide rail 52,
and horizontally moving the base 53. The drive members are operable
to move the base 53 to positions for accessing the coating units 31
and heat-treating units 41 arranged vertically and
horizontally.
[0106] The base 53 has a turntable 55 rotatable about a vertical
axis Q. The turntable 55 has two holding arms 57a and 57b
horizontally movably attached thereto for holding wafers W,
respectively. The two holding arms 57a and 57b are arranged
vertically close to each other. Further, drive members (not shown)
are provided for rotating the turntable 55, and moving the holding
arms 57a and 57b. The drive members are operable to move the
turntable 55 to positions opposed to the coating units 31,
heat-treating units 41 and receivers PASS.sub.1 and PASS.sub.2, and
to extend and retract the holding arms 57a and 57b to and from the
coating units 31 and so on.
[0107] The story K3 will be described next. Like reference numerals
are used to identify like parts which are the same as in the story
K1, and will not be described again. The layout (arrangement) in
plan view of the main transport mechanism T.sub.3 and treating
units in the story K3 is substantially the same as in the story K1.
Thus, the arrangement of the various treating units of the story K3
as seen from the main transport mechanism T.sub.3 is substantially
the same as the arrangement of the various treating units of the
story K1 as seen from the main transport mechanism T.sub.1. The
coating units 31 and heat-treating units 41 of the story K3 are
stacked under the coating units 31 and heat-treating units 41 of
the story K1, respectively.
[0108] In the following description, when distinguishing the resist
film coating units RESIST in the stories K1 and K3, subscripts "1"
and "3" will be affixed (for example, the resist film coating units
RESIST in the story K1 will be referred to as "resist film coating
units RESIST.sub.1").
[0109] The other aspects of the treating block Ba will be
described. As shown in FIGS. 6 and 7, each of the transporting
spaces A.sub.1 and A.sub.3 has a first blowout unit 61 for blowing
out a clean gas, and an exhaust unit 62 for sucking the gas. Each
of the first blowout unit 61 and exhaust unit 62 is in the form of
a flat box having substantially the same area as the transporting
space A.sub.1 in plan view. Each of the first blowout unit 61 and
exhaust unit 62 has first blowout openings 61a or exhaust openings
62a formed in one surface thereof. In this embodiment, the first
blowout openings 61a or exhaust openings 62a are in the form of
numerous small bores f (see FIG. 11). The first blowout units 61
are arranged over the transporting spaces A.sub.1 and A.sub.3 with
the first blowout openings 61a directed downward. The exhaust units
62 are arranged under the transporting spaces A.sub.1 and A.sub.3
with the exhaust openings 62a directed upward. The atmosphere in
the transporting space A.sub.1 and the atmosphere in the
transporting space A.sub.3 are blocked off by the exhaust unit 62
of the transporting space A.sub.1 and the first blowout unit 61 of
the transporting space A.sub.3. Thus, each of the stories K1 and K3
has the atmosphere blocked off from the other.
[0110] Referring to FIG. 7, the first blowout units 61 of the
transporting spaces A.sub.1 and A.sub.3 are connected to a common,
first gas supply pipe 63. The first gas supply pipe 63 extends
laterally of the receivers PASS.sub.2 and PASS.sub.4 from an upper
position of the transporting space A.sub.1 to a lower position of
the transporting space A.sub.3, and is bent below the transporting
space A.sub.3 to extend horizontally. The other end of the first
gas supply pipe 63 is connected to a gas source not shown.
Similarly, the exhaust units 62 of the transporting spaces A.sub.1
and A.sub.3 are connected to a common, first gas exhaust pipe 64.
The first gas exhaust pipe 64 extends laterally of the receivers
PASS.sub.2 and PASS.sub.4 from a lower position of the transporting
space A.sub.1 to a lower position of the transporting space
A.sub.3, and is bent below the transporting space A2 to extend
horizontally. As the gas is blown out of each first blowout opening
61a and sucked and exhausted through each exhaust opening 62a of
the transporting spaces A1 and A3, gas currents are formed to flow
from top to bottom of the transporting spaces A.sub.1 and A.sub.3,
thereby keeping each of the transporting spaces A.sub.1 and A.sub.3
in a clean state.
[0111] As shown in FIGS. 3, 8 and 10A, each coating unit 31 of the
stories K1 and K3 has a pit portion PS extending vertically. The
pit portion PS accommodates a second gas supply pipe 65 extending
vertically for supplying the clean gas, and a second gas exhaust
pipe 66 extending vertically for exhausting the gas. Each of the
second gas supply pipe 65 and second gas exhaust pipe 66 branches
at a predetermined height in each coating unit 31 to extend
substantially horizontally from the pit portion PS. A plurality of
branches of the second gas supply pipe 65 are connected to second
blowout units 67 for blowing out the gas downward. A plurality of
branches of the second gas exhaust pipe 66 are connected for
communication to the bottoms of the respective cups 33. The other
end of the second gas supply pipe 65 is connected to the first gas
supply pipe 63 below the story K3. The other end of the second gas
exhaust pipe 66 is connected to the first gas exhaust pipe 64 below
the story K3. As the gas is blown out of the second blowout units
67 and exhausted through the second exhaust pipes 62a, the
atmosphere inside each cup 33 is constantly maintained clean,
thereby allowing for excellent treatment of the wafer W held by the
spin holder 32.
[0112] The pit portions PS further accommodate piping of the
treating solutions, electric wiring and the like (not shown). Thus,
with the pit portions PS accommodating the piping and electric
wiring provided for the coating units 31 of the stories K1 and K3,
the piping and electric wiring can be reduced in length.
[0113] The treating block Ba has one housing 75 for accommodating
the main transport mechanisms T.sub.1 and T.sub.3, coating units 31
and heat-treating units 41 described hereinbefore. The treating
block Bb described hereinafter also has a housing 75 for
accommodating the main transport mechanisms T.sub.2 and T.sub.4 and
the treating units of the treating block Bb. The housing 75 of the
treating block Ba and the housing 75 of the treating block Bb are
separate entities. Thus, with each of the treating blocks Ba and Bb
having the housing 75 accommodating the main transport mechanisms T
and treating units en bloc, the treating section 3 may be
manufactured and assembled simply. The treating block Ba
corresponds to the coating block in this invention.
[0114] Treating Section 3--Treating Block Bb
[0115] The story K2 will be described. Like reference numerals are
used to identify like parts which are the same as in the story K1
and will not be described again. The story K2 has a transporting
space A.sub.2 formed as an extension of the transporting space
A.sub.1.
[0116] The story K2 has developing units DEV for developing wafers
W, heat-treating units 42 for heat-treating the wafers W, and an
edge exposing unit EEW for exposing peripheral regions of the
wafers W. The developing units DEV are arranged at one side of the
transporting space A.sub.2, and the heat-treating units 42 and edge
exposing unit EEW are arranged at the other side of the
transporting space A.sub.2. Preferably, the developing units DEV
are arranged at the same side as the coating units 31. It is also
preferable that the heat-treating units 42 and edge exposing unit
EEW are arranged in the same row as the heat-treating units 41. In
this specification, the treatment carried out in the developing
units DEV is referred to as developing treatment as appropriate,
and the treatment carried out in the edge exposing unit EEW is
referred to as edge exposure as appropriate.
[0117] The number of developing units DEV is four, and sets of two
units DEV arranged horizontally along the transporting space
A.sub.2 are stacked one over the other. As shown in FIGS. 3 and 8,
each developing unit DEV includes a spin holder 77 for holding and
spinning a wafer W, and a cup 79 surrounding the wafer W. The two
developing units DEV arranged at the lower level are not separated
from each other by a partition wall or the like. A supply device 81
is provided for supplying developers to the two developing units
DEV. The supply device 81 includes two slit nozzles 81a having a
slit or a row of small bores for delivering the developers. The
slit or row of small bores, preferably, has a length corresponding
to the diameter of wafer W. Preferably, the two slit nozzles 81a
are arranged to deliver developers of different types or
concentrations. The supply device 81 further includes a moving
mechanism 81b for moving each slit nozzle 81a. Thus, the slit
nozzles 81a are movable, respectively, over the two spin holders 77
juxtaposed sideways.
[0118] The plurality of heat-treating units 42 are arranged
sideways along the transporting space A.sub.2, and stacked one over
the other. The heat-treating units 42 include heating units HP for
heating wafers W, cooling units CP for cooling wafers W, and
heating and cooling units PHP for carrying out heating and cooling
treatment.
[0119] The plurality of heating and cooling units PHP are
vertically stacked in the column closest to the IF section 5, each
having one side facing the IF section 5. The heating and cooling
units PHP on the story K2 have transport ports formed in the sides
thereof for passage of wafers W. IF transport mechanisms T.sub.IF
to be described hereinafter transports wafers W through the above
transport ports to the heating and cooling units PHP. The heating
and cooling units PHP arranged on the story K2 carry out
post-exposure baking (PEB) treatment. Thus, the heating and cooling
treatment carried out in the heating and cooling units PHP on the
story K2 is referred to herein as PEB treatment in particular.
Similarly, the heating and cooling treatment carried out in the
heating and cooling units PHP on the story K4 is referred to herein
as PEB treatment in particular.
[0120] The single edge exposing unit EEW is disposed in a
predetermined position. The edge exposing unit EEW includes a spin
holder (not shown) for holding and spinning a wafer W, and a light
emitter (not shown) for exposing edges of the wafer W held by the
spin holder.
[0121] The receiver PASS.sub.5 is formed on top of the heating and
cooling units PHP. The main transport mechanism T.sub.2 and IF
transport mechanisms T.sub.IF to be described hereinafter transfer
wafers W through the receiver PASS.sub.5.
[0122] The main transport mechanism T.sub.2 is disposed
substantially centrally of the transporting space A.sub.2 in plan
view. The main transport mechanism T.sub.2 has the same
construction as the main transport mechanism T.sub.1. The main
transport mechanism T.sub.2 transports wafers W to and from the
receiver PASS.sub.2, various heat-treating units 42, edge exposing
unit EEW and receiver PASS.sub.5.
[0123] The story K4 will be described briefly. The relationship in
construction between story K2 and story K4 is similar to that
between stories K1 and K3. The treating units on the story K4 are
developing units DEV, heat-treating units 42 and an edge exposing
unit EEW. The heat-treating units 42 on the story K4 include
heating units HP, cooling units CP and heating and cooling units
PHP. The receiver PASS.sub.6 is formed on top of the heating and
cooling units PHP on the story K4. The main transport mechanism
T.sub.4 and IF transport mechanisms T.sub.IF described hereinafter
transfer wafers W through the receiver PASS.sub.6. The heating and
cooling units PHP arranged on the story K4 also carry out
post-exposure baking (PEB) treatment.
[0124] In the following description, when distinguishing the
developing units DEV, edge exposing units EEW and so on provided on
the stories K2 and K4, subscripts "2" and "4" will be affixed (for
example, the heating units HP on the story K2 will be referred to
as "heating units HP.sub.2").
[0125] Each of the transporting spaces A.sub.2 and A.sub.4 of the
stories K2 and K4 also has constructions corresponding to the first
blowout unit 61 and exhaust unit 62. Each developing unit DEV of
the stories K2 and K4 also has constructions corresponding to the
second blowout unit 67 and second gas exhaust pipe 66. The treating
block Bb corresponds also to the developing block in this
invention.
[0126] IF Section 5
[0127] The IF section 5 transfers wafers W between each of the
substrate treatment lines Lu and Ld (stories K2 and K4) of the
treating section 3 and the exposing machine EXP. The IF section 5
has IF transport mechanisms T.sub.IF for transporting wafers W. The
IF transport mechanisms T.sub.IF include a first transport
mechanism T.sub.IFA and a second transport mechanism T.sub.IFB that
can transfer wafers W to and from each other. The first transport
mechanism T.sub.IFA transports wafers W to and from the substrate
treatment lines Lu and Ld. In this embodiment, as described
hereinbefore, the first transport mechanism T.sub.IFA transports
wafers W to and from the receivers PASS.sub.5 and PASS.sub.6 on the
stories K2 and K4, and to and from the heating and cooling units
PHP on the stories K3 and K4. The second transport mechanism
T.sub.IFB transports wafers W to and from the exposing machine
EXP.
[0128] As shown in FIG. 3, the first transport mechanism T.sub.IFA
and second transport mechanism T.sub.IFB are arranged in a
transverse direction perpendicular to the transport direction of
the substrate treatment lines L. The first transport mechanism
T.sub.IFA is disposed at the side where the heat-treating units 42
and so on of the stories K2 and K4 are located. The second
transport mechanism T.sub.IFB is disposed at the side where the
developing units DEV of the stories K2 and K4 are located. Stacked
in multiples stages between the first and second transport
mechanisms T.sub.IFA and T.sub.IFB are a receiver PASS-CP for
receiving and cooling wafers W, a receiver PASS.sub.7 for receiving
wafers W, and buffers BF for temporarily storing wafers W. The
first and second transport mechanisms T.sub.IFA and T.sub.IFB
transfer wafers W through the receiver PASS-CP and receiver
PASS.sub.7. The buffers BF are accessed exclusively by the first
transport mechanism T.sub.IFA.
[0129] As shown in FIG. 9, the first transport mechanism T.sub.IFA
includes a fixed base 83, lift shafts 85 vertically extendible and
contractible relative to the base 83, and a holding arm 87
swivelable on the lift shafts 85, and extendible and retractable
radially of the swivel motion, for holding a wafer W. The second
transport mechanism T.sub.IFB also has a base 83, lift shafts 85
and a holding arm 87.
[0130] A control system of this apparatus 10 will be described
next. This apparatus 10 further includes a control section 90 and
an input unit 101. FIG. 12 is a control block diagram of the
substrate treating apparatus according to the invention.
[0131] The input unit 101 is operable to input information for
setting substrate transport paths for each of the substrate
treatment lines Lu and Ld. The information inputted to this input
unit 101 is outputted to a main controller 91. The information for
setting substrate transport paths for each story includes the types
and order of treating units to/in which substrates are to be
transported, for example. Or, it is information identifying
treating units or particulars of treatment for which a test run is
made. The information for setting transport paths for the substrate
treatment line Lu may be divided into each transport path for the
stories K1 and K2. This applies also to the substrate treatment
line Ld.
[0132] The input unit 101 has pointing devices represented by a
mouse, keyboard, joystick, trackball, touch panel, and so on.
[0133] As shown in FIG. 12, the control section 90 includes a main
controller 91 and a first to a seventh controllers 93, 94, 95, 96,
97, 98 and 99. The main controller 91 performs overall control of
the first to seventh controllers 93-99. Based on a treating recipe
set beforehand and/or information inputted to the input unit 101,
the main controller 91 controls the main transport mechanisms T
through the first to seventh controllers 93-99, to change the
transport paths for each story K.
[0134] For example, based on information on the types and order of
treating units to/in which substrates are to be transported, the
main controller 91 determines treating units and their order to/in
which wafers W are transported, and also determines transport paths
linking the treating units. Alternatively, based on information
identifying treating units put to a test run, the main controller
91 determines transport paths for transporting wafers W only to the
treating units identified.
[0135] The first controller 93 controls substrate transport by the
ID transport mechanism T.sub.ID. The second controller 94 controls
substrate transport by the main transport mechanism T.sub.1, and
substrate treatment in the resist film coating units RESIST.sub.1,
antireflection film coating units BARC.sub.1, cooling units
.sub.CP1, heating and cooling units PHP.sub.1 and adhesion units
AHL.sub.1. The third controller 95 controls substrate transport by
the main transport mechanism T.sub.2, and substrate treatment in
the edge exposing unit EEW.sub.2, developing units DEV.sub.2,
heating units HP.sub.2 and cooling units CP.sub.2. The controls by
the fourth and fifth controllers 96 and 97 correspond to those by
the second and third controllers 94 and 95, respectively. The sixth
controller 98 controls substrate transport by the first transport
mechanism T.sub.IFA, and substrate treatment in the heating and
cooling units PHP.sub.2 and PHP.sub.4. The seventh controller 99
controls substrate transport by the second transport mechanism
T.sub.IFB. The first to seventh controllers 93-99 carry out the
controls independently of one another.
[0136] Each of the main controller 91 and the first to seventh
controllers 93-99 is realized by a central processing unit (CPU)
which performs various processes, a RAM (Random Access Memory) used
as the workspace for operation processes, and a storage medium such
as a fixed disk for storing a variety of information including a
predetermined processing recipe (processing program).
[0137] Next, operation of the substrate treating apparatus in this
embodiment will be described separately for the case where wafers W
go through the same process of treatment in the substrate treatment
lines Lu and Ld, and for the case where wafers W go through
different processes of treatment in the substrate treatment lines
Lu and Ld. In each example of operation, the transport paths of
wafers W are based on information inputted to the input unit 101 by
the operator beforehand.
[0138] Example of Operation 1--where Wafers W go Through the Same
Process of Treatment in the Substrate Treatment Lines Lu and Ld
[0139] FIG. 13 is a flow chart of a series of treatments of wafers
W, indicating transport paths of wafers W, that is the treating
units and receivers to which the wafers W are transported in order.
The flow chart shown in FIG. 13 corresponds to the processes shown
in FIG. 1. For expediency, the various processes shown in FIG. 1
are put in parentheses in FIG. 13, to specify the correspondence
relations between the various processes shown in FIG. 1 and the
treating units shown in FIG. 13. FIG. 14 is a view schematically
showing operations repeated by each transport mechanism, and
specifying an order of treating units, receivers and cassettes
accessed by the transport mechanisms.
[0140] The control section 90 operates each transport mechanism T
based on a treating recipe set beforehand and/or information
inputted to the input unit 101. The following description will be
made separately for each transport mechanism.
[0141] ID Transport Mechanism T.sub.ID
[0142] The ID transport mechanism T.sub.ID moves to a position
opposed to one of the cassettes C, holds with the holding arm 25 a
wafer W to be treated and takes the wafer W out of the cassette C.
The ID transport mechanism T.sub.ID swivels the holding arm 25,
vertically moves the lift shaft 23, moves to a position opposed to
the receiver PASS.sub.1, and places the wafer W on the receiver
PASS.sub.1A (which corresponds to step S1a in FIG. 13; only step
references will be indicated hereinafter). At this time, a wafer W
usually is present on the receiver PASS.sub.1B, and the ID
transport mechanism T.sub.ID receives this wafer W and stores it in
a cassette C (step S23). When there is no wafer W on the receiver
PASS.sub.1B, step S23 is omitted. Then, the ID transport mechanism
T.sub.ID accesses the cassette C, and transports a wafer W from the
cassette C to the receiver PASS.sub.3A (step S1b). Here again, if a
wafer W is present on the receiver PASS.sub.3B, the ID transport
mechanism T.sub.ID will store this wafer W in a cassette C (step
S23). The ID transport mechanism T.sub.ID repeats the above
operation.
[0143] This operation of the ID transport mechanism T.sub.ID is
controlled by the first controller 93. As a result, the wafers W in
the cassette C are fed to the story K1, and the wafers W delivered
from the story K1 are stored in the cassette C. Similarly, the
wafers W in the cassette C are fed to the story K3, and the wafers
W delivered from the story K3 are stored in the cassette C.
[0144] Main Transport Mechanisms T.sub.1, T.sub.3
[0145] Since operation of the main transport mechanism T.sub.3 is
substantially the same as operation of the main transport mechanism
T.sub.1, only the main transport mechanism T.sub.1 will be
described. The main transport mechanism T.sub.1 moves to a position
opposed to the receiver PASS.sub.1. At this time, the main
transport mechanism T.sub.1 holds, on one holding arm 57 (e.g.
57b), a wafer W received immediately before from the receiver
PASS.sub.2B. The main transport mechanism T.sub.1 places this wafer
W on the receiver PASS.sub.1B (step S22), and holds the wafer W
present on the receiver PASS.sub.1A with the other holding arm 57
(e.g. 57a).
[0146] The main transport mechanism T.sub.1 accesses one of the
cooling units CP.sub.1. There is a different wafer W having already
received cooling treatment in the cooling unit CP.sub.1. The main
transport mechanism T.sub.1 holds the different wafer W with the
unloaded holding arm 57 (holding no wafer W), takes it out of the
cooling unit CP.sub.1, and loads into the cooling unit CP.sub.1 the
wafer W having received from the receiver PASS.sub.1A. Then, the
main transport mechanism T.sub.1, holding the cooled wafer W, moves
to one of the antireflection film coating units BARC.sub.1. The
cooling unit CP.sub.1 starts cooling treatment of the wafer W
loaded therein (step S2: the treatment in step S2 by the cooling
unit CP.sub.1 corresponds to cooling treatment T1u in FIG. 1--only
treatment shown in FIG. 1 will be indicated hereinafter as
appropriate). This heat treatment (cooling) will have been finished
by the time the main transport mechanism T.sub.1 accesses this
cooling unit CP.sub.1 next time. The following description assumes
that wafers W having received predetermined treatments are present
also in the other, different heat-treating units 41 and coating
units 31 when the main transport mechanism T.sub.1 makes access
thereto.
[0147] Accessing the antireflection film coating unit BARC.sub.1,
the main transport mechanism T.sub.1 takes a wafer W having
antireflection film formed thereon from the antireflection film
coating unit BARC.sub.1, and places the cooled wafer W on the spin
holder 32 of the antireflection film coating unit BARC.sub.1. Then,
the main transport mechanism T.sub.1, holding the wafer W having
antireflection film formed thereon, moves to one of the heating and
cooling units PHP.sub.1. The antireflection film coating unit
BARC.sub.1 starts antireflection film material coating treatment of
the wafer W placed on the spin holder 32 (step S3a--antireflection
film material coating treatment T2u).
[0148] Specifically, the spin holder 32 spins the wafer W in
horizontal posture, the gripper 26 grips one of the nozzles 35, the
nozzle moving mechanism 37 moves the gripped nozzle 35 to a
position above the wafer W, and the treating solution for
antireflection film is supplied from the nozzle 35 to the wafer W.
The treating solution supplied spreads all over the wafer W, and is
scattered away from the wafer W. The cup 33 collects the scattering
treating solution. In this way, the treatment is carried out for
forming antireflection film on the wafer W.
[0149] Accessing the heating and cooling unit PHP.sub.1, the main
transport mechanism T.sub.1 takes a wafer W having received heat
treatment out of the heating and cooling unit PHP.sub.1, and loads
the wafer W having antireflection film formed thereon into the
heating and cooling unit PHP.sub.1. Then, the main transport
mechanism T.sub.1, holding the wafer W taken out of the heating and
cooling unit PHP.sub.1, moves to one of the cooling units CP.sub.1.
The heating and cooling unit PHP.sub.1 receives a wafer W
successively on the two plates 43, to heat the wafer W on one of
the plates 43 and then to cool the wafer W on the other plate 43
(step S4a--heating and cooling treatment T3u).
[0150] Having moved to the cooling unit CP.sub.1, the main
transport mechanism T.sub.1 takes a wafer W out of the cooling unit
CP.sub.1, and loads the wafer W held by the transport mechanism
T.sub.1 into the cooling unit CP.sub.1. The cooling unit CP.sub.1
cools the wafer W loaded therein (step S5a--cooling treatment
T4u).
[0151] Then, the main transport mechanism T.sub.1 moves to one of
the resist film coating units RESIST.sub.1. The main transport
mechanism T.sub.1 takes a wafer W having resist film formed thereon
from the resist film coating unit RESIST.sub.1, and loads the wafer
W held by the main transport mechanism T.sub.1 into the resist film
coating unit RESIST.sub.1. The resist film coating unit
RESIST.sub.1 coats the resist film material on the wafer W loaded
therein while spinning the wafer W (step S6a--resist film material
coating treatment T5u).
[0152] The main transport mechanism T.sub.1 further moves to one of
the heating and cooling units PHP.sub.1 and one of the cooling
units CP.sub.1. The main transport mechanism T.sub.1 loads the
wafer W having resist film formed thereon into the heating and
cooling unit PHP.sub.1, transfers a wafer W treated in the heating
and cooling unit PHP.sub.1 to the cooling unit CP.sub.1, and
receives a wafer W treated in the cooling unit CP.sub.1. The
heating and cooling unit PHP.sub.1 and cooling unit CP.sub.1 carry
out predetermined treatments of newly loaded wafers W, respectively
(step S7a--heating and cooling treatment T6u, and S8a--cooling
treatment T7u).
[0153] The main transport mechanism T.sub.1 moves to the receiver
PASS.sub.2, places the wafer W it is holding on the receiver
PASS.sub.2A (step S9a), and receives a wafer W present on the
receiver PASS.sub.2B (step S21a).
[0154] Subsequently, the main transport mechanism T.sub.1 accesses
the receiver PASS.sub.1 again, and repeats the above operation.
This operation is controlled by the second controller 94. As a
result, all the wafers W transported from the cassette C to the
receiver PASS.sub.1 are transported through the transport paths
described above between the various treating units on the story K1
to receive the predetermined treatments in the treating units
successively.
[0155] The main transport mechanism T.sub.1 transports a wafer W
having been transported to the receiver PASS.sub.1 to a
predetermined treating unit (a cooling unit CP.sub.1 in this
embodiment), and takes a treated wafer W from this treating unit.
Subsequently, the main transport mechanism T.sub.1 transports the
wafer W taken out to a next treating unit (an antireflection film
coating unit BARC.sub.1 in this embodiment), and takes a treated
wafer W from this treating unit. In this way, the treatment is
carried out in parallel for a plurality of wafers W by transferring
a treated wafer W from each treating unit to a new treating unit.
Starting with a wafer W first placed on the receiver PASS.sub.1,
the wafers W are successively placed on the receiver PASS.sub.2 to
be fed to the story K2. Similarly, the wafers W are placed on the
receiver PASS.sub.1 in the order of placement on the receiver
PASS.sub.2, to be fed to the ID section 1.
[0156] Main Transport Mechanisms T.sub.2, T.sub.4
[0157] Since operation of the main transport mechanism T.sub.4 is
substantially the same as operation of the main transport mechanism
T.sub.2, only the main transport mechanism T.sub.2 will be
described. The main transport mechanism T.sub.2 moves to a position
opposed to the receiver PASS.sub.2. At this time, the main
transport mechanism T.sub.2 holds a wafer W received from a cooling
unit CP.sub.2 accessed immediately before. The main transport
mechanism T.sub.2 places this wafer W on the receiver PASS.sub.2B
(step S21a), and holds the wafer W present on the receiver
PASS.sub.2A (step S9a).
[0158] The main transport mechanism T.sub.2 accesses the edge
exposing unit EEW.sub.2. The main transport mechanism T.sub.2
receives a wafer W having received a predetermined treatment in the
edge exposing unit EEW.sub.2, and loads the cooled wafer W into the
edge exposing unit EEW.sub.2. While spinning the wafer W loaded
therein, the edge exposing unit EEW.sub.2 irradiates peripheral
regions of the wafer W with light from the light emitter not shown,
thereby exposing the peripheral regions of the wafer W (step
S10a--edge exposure T8u).
[0159] The main transport mechanism T.sub.2, holding the wafer W
received from the edge exposing unit EEW.sub.2, accesses the
receiver PASS.sub.5. The main transport mechanism T.sub.2 places
the wafer W on the receiver PASS.sub.5A (step S11a), and holds a
wafer W present on the receiver PASS.sub.5B (step S16a).
[0160] The main transport mechanism T.sub.2 moves to one of the
cooling units CP.sub.2, and replaces a wafer W in the cooling unit
CP.sub.2 with the wafer W held by the main transport mechanism
T.sub.2. The main transport mechanism T.sub.2 holds the wafer W
having received cooling treatment, and accesses one of the
developing units DEV.sub.2. The cooling unit CP.sub.2 starts
treatment of the newly loaded wafer W (step S17a--cooling treatment
T1u).
[0161] The main transport mechanism T.sub.2 takes a developed wafer
W from the developing unit DEV.sub.2, and places the cooled wafer W
on the spin holder 77 of the developing unit DEV.sub.2. The
developing unit DEV.sub.2 develops the wafer W placed on the spin
holder 77 (step S18a--developing treatment T12u). Specifically,
while the spin holder 77 spins the wafer W in horizontal posture,
the developer is supplied from one of the slit nozzles 81a to the
wafer W, thereby developing the wafer W.
[0162] The main transport mechanism T.sub.2 holds the developed
wafer W, and accesses one of the heating units HP.sub.2. The main
transport mechanism T.sub.2 takes a wafer W out of the heating unit
HP.sub.2, and loads the wafer W it is holding into the heating unit
HP.sub.2. Then, the main transport mechanism T.sub.2 transports the
wafer W taken out of the heating unit HP.sub.2 to one of the
cooling units CP.sub.2, and takes out a wafer W already treated in
this cooling unit CP.sub.2. The heating unit HP.sub.2 and cooling
unit CP.sub.2 carry out predetermined treatments for the newly
loaded wafers W, respectively (step S19a--heating treatment T13u,
and S20a--cooling treatment T14u).
[0163] Subsequently, the main transport mechanism T.sub.2 accesses
the receiver PASS.sub.2 again, and repeats the above operation.
This operation is controlled by the third controller 95. As a
result, the wafers W are forwarded to the receiver PASS.sub.5B in
the order in which they are placed on the receiver PASS.sub.2A.
Similarly, the wafers W are forwarded to the receiver PASS.sub.5B
in the order in which they are placed on the receiver
PASS.sub.5B.
[0164] IF Transport Mechanisms T.sub.IF--First Transport Mechanism
T.sub.IFA
[0165] The first transport mechanism T.sub.IFA accesses the
receiver PASS.sub.5, and receives the wafer W present on the
receiver PASS.sub.5A (step S11a). The first transport mechanism
T.sub.IFA, holding the wafer W received, moves to the receiver
PASS-CP, and loads the wafer W on the receiver PASS-CP (step
S12).
[0166] Next, the first transport mechanism T.sub.IFA receives a
wafer W from the receiver PASS.sub.7 (step S14), and moves to a
position opposed to one of the heating and cooling units PHP.sub.2.
The first transport mechanism T.sub.IFA takes a wafer W having
received PEB treatment from the heating and cooling unit PHP.sub.2,
and loads the wafer W received from the receiver PASS.sub.7 into
the heating and cooling unit PHP.sub.2. The heating and cooling
unit PHP.sub.2 carries out heat treatment for the newly loaded
wafer W (step S15a--PEB treatment T10u).
[0167] The first transport mechanism T.sub.IFA transports the wafer
W taken out of the heating and cooling unit PHP.sub.2 to the
receiver PASS.sub.5B (step S16a). Subsequently, the first transport
mechanism T.sub.IFA transports a wafer W from the receiver
PASS.sub.6A to the receiver PASS-CP (Step S11b, S12). Next, the
first transport mechanism T.sub.IFA transports a wafer W from the
receiver PASS.sub.7 to one of the heating and cooling units
PHP.sub.4. At this time, the first transport mechanism T.sub.IFA
takes out a wafer W having received the post-exposure baking
treatment (PEB) treatment in the heating and cooling unit
PHP.sub.4, and places the wafer W on the receiver PASS.sub.6B
(steps S14, S15b--PEB treatment T10d, and S16b).
[0168] Subsequently, the first transport mechanism T.sub.IFA
accesses the receiver PASS.sub.5 again and repeats the above
operation. This operation is controlled by the sixth controller
98.
[0169] IF Transport Mechanisms T.sub.IF--Second Transport Mechanism
T.sub.IFB
[0170] The second transport mechanism T.sub.IFB takes a wafer W out
of the receiver PASS-CP, and transports it to the exposing machine
EXP. The exposing machine EXP exposes the wafer W (Step
S13--Exposure T9). Then, the second transport mechanism T.sub.IFB
receives the exposed wafer W from the exposing machine EXP, and
transports it to the receiver PASS.sub.7.
[0171] Subsequently, the second transport mechanism T.sub.IFB
accesses the receiver PASS-CP again and repeats the above
operation.
[0172] Example of Operation 2--where Wafers W go Through Different
Processes of Treatment in the Substrate Treatment Lines Lu and
Ld
[0173] The example of operation 2 will be described next. FIG. 15
is a flow chart of a series of treatments of wafers W, indicating
transport paths of wafers W, that is, the treating units and
receivers to which the wafers W are transported in order. The flow
chart shown in FIG. 15 corresponds to the processes shown in FIG.
2. For expediency, the various processes shown in FIG. 2 are put in
parentheses in FIG. 15, to specify the correspondence relations
between the various processes shown in FIG. 2 and the treating
units shown in FIG. 15. FIG. 16 is a view schematically showing
operations repeated by each transport mechanism, and specifying an
order of treating units, receivers and cassettes accessed by the
transport mechanisms.
[0174] The control section 90 operates each transport mechanism T
based on a treating recipe set beforehand and/or information
inputted to the input unit 101. The following description will be
made separately for each transport mechanism. The transport
mechanisms and other components that perform similarly to the
example of operation 1 will be described briefly as
appropriate.
[0175] ID Transport Mechanism T.sub.ID
[0176] The operation of ID transport mechanism T.sub.ID is the same
as in the example of operation 1, and therefore its description is
omitted.
[0177] Main Transport Mechanisms T.sub.1, T.sub.3
[0178] The operation of the main transport mechanism T.sub.1 is the
same as in the example of operation 1. Thus, the operation of the
main transport mechanism T.sub.1 will be omitted, and only the main
transport mechanism T.sub.3 will be described.
[0179] The main transport mechanism T.sub.3 moves to a position
opposed to the receiver PASS.sub.3. At this time, the main
transport mechanism T.sub.3 holds, on one holding arm 57 (e.g.
57b), a wafer W received immediately before from the receiver
PASS.sub.4B. The main transport mechanism T.sub.3 places this wafer
W on the receiver PASS.sub.3B (step S22b), and holds the wafer W
present on the receiver PASS.sub.3A with the other holding arm 57
(e.g. 57a) (step S1b).
[0180] The main transport mechanism T.sub.3 accesses one of the
resist film coating units RESIST.sub.3. The main transport
mechanism T.sub.3 takes a wafer W having resist film formed thereon
from the resist film coating unit RESIST.sub.3, and loads the wafer
W held by the main transport mechanism T.sub.3 into the resist film
coating unit RESIST.sub.3. The resist film coating unit
RESIST.sub.3 coats the resist film material on the wafer W loaded
therein while spinning the wafer W (step S6b--resist film material
coating treatment T21d).
[0181] Subsequently, the main transport mechanism T.sub.3 accesses
the receiver PASS.sub.3 again, and repeats the above operation.
This operation is controlled by the fourth controller 96. As a
result, all the wafers W transported from the cassette C to the
receiver PASS.sub.3 are transported through the transport path
leading only to the resist film coating unit RESIST.sub.3 on the
story K3.
[0182] Main Transport Mechanisms T.sub.2, T.sub.4
[0183] The operation of the main transport mechanism T.sub.2 is the
same as in the example of operation 1. Thus, the operation of the
main transport mechanism T.sub.2 will be omitted. The main
transport mechanism T.sub.4 carries out no operation to transport
wafers W. For example, the fifth controller 97 maintains the main
transport mechanism T.sub.4 at rest.
[0184] IF Transport Mechanisms T.sub.IF--First Transport Mechanism
T.sub.IFA
[0185] The first transport mechanism T.sub.IFA accesses the
receiver PASS.sub.5, and receives the wafer W present on the
receiver PASS.sub.5A (step S11a). The first transport mechanism
T.sub.IFA, holding the wafer W received, moves to the receiver
PASS-CP, and loads the wafer W on the receiver PASS-CP (step
S12).
[0186] Next, the first transport mechanism T.sub.IFA receives a
wafer W from the receiver PASS.sub.7 (step S14), and moves to a
position opposed to one of the heating and cooling units PHP.sub.2.
The first transport mechanism T.sub.IFA takes a wafer W having
received post-exposure baking treatment (PEB) treatment from the
heating and cooling unit PHP.sub.2, and loads the wafer W received
from the receiver PASS.sub.7 into the heating and cooling unit
PHP.sub.2. The heating and cooling unit PHP.sub.2 carries out heat
treatment for the newly loaded wafer W (step S15--PEB treatment
T10u). The first transport mechanism T.sub.IFA transports the wafer
W taken out of the heating and cooling unit PHP.sub.2 to the
receiver PASS.sub.5B (step S16a).
[0187] Subsequently, the first transport mechanism T.sub.IFA
accesses the receiver PASS.sub.5 again and repeats the above
operation.
[0188] IF Transport Mechanisms T.sub.IF--Second Transport Mechanism
T.sub.IFB
[0189] The operation of the second transport mechanism T.sub.IFB is
the same as in the example of operation 1. Thus, the operation of
the second transport mechanism T.sub.IFB will be omitted.
[0190] The above is the example of operation 2. However, the
processes in the substrate treatment lines Lu and Ld are not
limited to examples of operation 1 and 2. As noted in the foregoing
description of the outline of this embodiment, the processes in the
substrate treatment lines Lu and Ld can be changed very flexibly.
Thus, since the substrate treating apparatus in this embodiment has
the control section 90 which changes the processes in the substrate
treatment lines Lu and Ld, the substrate treatment lines Lu and Ld
can carry out different treatments of wafers W in parallel as
described in the example of operation 2. Therefore, by transporting
wafers W selectively to the substrate treatment line Lu or Ld, the
process of treatment is changeable for each wafer W. Further, as
described in the example of operation 1, wafers W can go through
the same process of treatment in the substrate treatment lines Lu
and Ld. Consequently, this apparatus 10 has an improved substrate
throughput.
[0191] Specifically, in the example of operation 1, wafers W go
through the coating and developing process in all the substrate
treatment lines L. This embodiment includes heat treatment besides
the resist film material coating treatment and developing
treatment. Thus, resist film can be formed on the wafers W
conveniently, and the wafers W can be developed conveniently.
[0192] In the example of operation 2, while wafers W go through the
coating and developing process in the substrate treatment line Lu,
a process consisting only of the resist film material coating
treatment is carried out in the substrate treatment line Ld. The
resist film material coating treatment is a single treatment, which
is carried out in the resist film coating units RESIST. Thus, when
inspecting and verifying the quality of the resist film material
coating treatment, or putting the resist film coating units RESIST
to a test run, operation may be carried out as described in the
example of operation 2 to inhibit a sharp reduction in the working
rate of this apparatus.
[0193] The treating section 3 has the treating blocks Ba and Bb
arranged in juxtaposition, the substrate treatment line Lu is
provided on the same stories K1-K2 of the treating blocks Ba and
Bb, and the substrate treatment line Ld also is provided on the
same stories K3-K4 of the treating blocks Ba and Bb. The control
section 90 controls the main transport mechanisms T.sub.1-T.sub.4
on the respective stories K1-K4 to change the transport paths of
wafers W on the stories K1-K4. Thus, the processes in the substrate
treatment lines Lu and Ld can be changed separately and
independently. In other words, it is possible to change each of the
series of treatments on the same stories K1-K2 of the treating
blocks Ba and Bb and the series of treatments on the same stories
K3-K4.
[0194] The input unit 101 is provided, and the control section 90
carries out controls based on information inputted to the input
unit 101. Thus, the operator who operates the input unit 101 can
instruct changes in the transport paths conveniently.
[0195] The information inputted to the input unit 101 is
information on the type and order of treatment given to wafers W in
each of the substrate treatment lines Lu and Ld, or information
identifying treating units and/or the particulars of treatment put
to a test run. Thus, the control section 90 can determine transport
paths conveniently.
[0196] The treating block Bb and ID section 1 are located adjacent
the opposite sides of the treating block Ba, and wafers W treated
in the coating units 31 are transported from the treating block Ba
to the treating block Bb. Thus, a series of treatments including
the treatment for applying the treating solution to the wafers W
and the treatment for supplying the developer to the wafers W can
be carried out smoothly. Further, by transporting wafers W treated
in the coating units 31 from the treating blocks Ba to the ID
section 1, only the treatment for applying the treating solution to
the wafers W is carried out, and the wafers W can be returned to a
cassette C promptly.
[0197] Since the IF section 5 is located adjacent the treating
block Bb, wafers W can be transported from the treating block Bb to
the exposing machine EXP through the IF section 5, and the wafers W
exposed in the exposing machine EXP can be developed in the
developing units DEV. Further, unexposed wafers W may be developed
in the developing units DEV of the treating block Bb, without
transporting the wafers W from the treating block Bb to the
exposing machine EXP.
[0198] Embodiments of the present invention are not limited to the
foregoing embodiments, but may be modified as follows:
[0199] (1) Although the examples of operation 1 and 2 have been
described in the foregoing embodiment, the invention is not limited
to these examples.
[0200] Reference is made to FIG. 17. This is a schematic view
showing an outline of a modified substrate treating apparatus. In
the illustrated modification, the substrate treatment lines Lu and
Ld carry out different processes of treatment for wafers W. The
substrate treatment line Lu carries out the coating and developing
process. The substrate treatment line Ld carries out a plurality of
different types of treatment, which are the same as the coating and
developing process excepting that the first three treatments
(cooling treatment T1u, antireflection film material coating
treatment T2u and heating and cooling treatment T3u) are not
carried out. The first three treatments in the coating and
developing process are antireflection film material coating
treatment T2, and heat treatments T1 and T3 relating thereto, which
can be said the process for forming antireflection film on wafers
W.
[0201] In this modification, the ID section 1 (ID transport
mechanism T.sub.ID) transports wafers W taken out of a cassette C
to either one of the substrate treatment line Lu and Ld, and
returns the wafers W from the substrate treatment line Lu and Ld to
the cassette C. With such substrate transport by the ID section 1
(ID transport mechanism T.sub.ID), wafers W can be treated through
the process in either one of the substrate treatment lines Lu and
Ld.
[0202] Further, in this modification, the ID section 1 (ID
transport mechanism T.sub.ID) transports all the wafers W taken out
of a cassette C to the substrate treatment line Lu, transports the
wafers W from the substrate treatment line Lu to the substrate
treatment line Ld, and returns the wafers W from the substrate
treatment line Ld to the cassette C. With such substrate transport
by the ID section 1 (ID transport mechanism T.sub.ID), all the
wafers W can be treated through the process in the substrate
treatment line Lu, and thereafter through the process in the
substrate treatment line Ld. Such an example of operation can
conveniently carry out double exposure for forming two or more
patterns on the same oxide film on the wafers W.
[0203] (2) In the foregoing embodiment, as shown in FIGS. 1 and 2,
the coating and developing process includes various treatments
T1-T8 and T10-T14 carried out in this order. The invention is not
limited to the above, but change may be made as appropriate.
[0204] (3) In the foregoing embodiment, the separate exposing
machine EXP is disposed adjacent this apparatus 10, but this is not
limitative. This apparatus 10 may not adjoin the exposing machine
EXP.
[0205] (4) The foregoing embodiment provides two substrate
treatment lines L, but the invention not limited to this. The
construction may be modified to include three or more substrate
treatment lines L vertically arranged in multiple stages. In this
case, it is possible to uniform the processes in the substrate
treatment lines L, and to provide two or more types of processes
for the substrate treatment lines L. All the substrate treatment
lines L may carry out different processes.
[0206] (5) In the foregoing embodiment, the substrate treatment
lines L are arranged vertically, but the invention is not limited
to this. For example, a modification may be made to arrange a
plurality of substrate treatment lines L sideways or horizontally.
Or a plurality of substrate treatment lines L may be arranged
sideways as well as vertically.
[0207] (6) In the foregoing embodiment, the treating section 3 has
a plurality of treating blocks Ba and Bb arranged in juxtaposition,
but the invention is not limited to this. For example, the treating
section 3 may be constructed of a single treating block with
vertically divided stories. A single treating block providing the
substrate treatment line Lu and a single treating block providing
the substrate treatment line Ld may be arranged one over the
other.
[0208] (7) In the foregoing embodiment, the substrate treatment
lines L carry out all or part of the coating and developing
process, but the invention is not limited to this. The substrate
treatment lines L may be modified to perform other treatment such
as cleaning of wafers W. Thus, the type, number and the like of
treating units are selected or designed as appropriate. Further,
the substrate treating apparatus may be constructed to exclude the
IF section 5.
[0209] This invention may be embodied in other specific forms
without departing from the spirit or essential attributes thereof
and, accordingly, reference should be made to the appended claims,
rather than to the foregoing specification, as indicating the scope
of the invention.
* * * * *