U.S. patent application number 14/669790 was filed with the patent office on 2016-02-25 for method of manufacturing semiconductor device.
The applicant listed for this patent is Hitachi Kokusai Electric Inc.. Invention is credited to Shun MATSUI, Kazuyuki TOYODA.
Application Number | 20160056035 14/669790 |
Document ID | / |
Family ID | 54328294 |
Filed Date | 2016-02-25 |
United States Patent
Application |
20160056035 |
Kind Code |
A1 |
TOYODA; Kazuyuki ; et
al. |
February 25, 2016 |
Method of Manufacturing Semiconductor Device
Abstract
A method forms a film on a substrate to have different film
thicknesses and features within a plane of the substrate and
improves the manufacturing throughput. The method comprises: (a)
supplying a first process gas from above a substrate and a second
process gas from a lateral direction with respect to the substrate;
and (b) supplying a first reactive gas from above the substrate and
a second reactive gas from the lateral direction with respect to
the substrate, wherein at least one of (a) and (b) is performed at
least once in a manner that a total amount of the first and second
process gases supplied to the substrate center is different from
that of the first and second process gases supplied to the
substrate periphery.
Inventors: |
TOYODA; Kazuyuki; (Toyama,
JP) ; MATSUI; Shun; (Toyama, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Hitachi Kokusai Electric Inc. |
Tokyo |
|
JP |
|
|
Family ID: |
54328294 |
Appl. No.: |
14/669790 |
Filed: |
March 26, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14490882 |
Sep 19, 2014 |
9171734 |
|
|
14669790 |
|
|
|
|
Current U.S.
Class: |
438/778 |
Current CPC
Class: |
C23C 16/507 20130101;
H01L 21/67017 20130101; H01L 21/0217 20130101; H01J 37/321
20130101; H01L 21/0262 20130101; H01J 37/3244 20130101; H01L
21/3065 20130101; H01J 37/32926 20130101; C23C 16/455 20130101;
H01L 21/02274 20130101; C23C 16/45523 20130101; C23C 16/345
20130101; C23C 16/52 20130101; H01L 21/02211 20130101; H01L 21/0228
20130101; H01L 21/68792 20130101; H01J 37/32697 20130101; H01L
21/68742 20130101; C23C 16/45563 20130101 |
International
Class: |
H01L 21/02 20060101
H01L021/02 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 25, 2014 |
JP |
2014-170371 |
Claims
1. A method of manufacturing a semiconductor device, comprising:
(a) supplying a first process gas from above a substrate and a
second process gas from a lateral direction with respect to the
substrate; and (b) supplying a first reactive gas from above the
substrate and a second reactive gas from the lateral direction with
respect to the substrate, wherein each of (a) and (b) is performed
at least once in a manner that a total amount of the first process
gas and the second process gas supplied to a center portion of the
substrate is different from that of the first process gas and the
second process gas supplied to a peripheral portion of the
substrate; or a total amount of the first reactive gas and the
second reactive gas supplied to the center portion of the substrate
is different from that of the first reactive gas and the second
reactive gas supplied to the peripheral portion of the substrate in
at least one of (a) and (b).
2. The method of claim 1, wherein the total amount of the first
reactive gas and the second reactive gas supplied to the center
portion of the substrate is greater than that of the first reactive
gas and the second reactive gas supplied to the peripheral portion
of the substrate in (b).
3. The method of claim 1, wherein the total amount of the first
reactive gas and the second reactive gas supplied to the center
portion of the substrate is less than that of the first reactive
gas and the second reactive gas supplied to the peripheral portion
of the substrate in (b).
4. The method of claim 1, wherein (b) comprises: activating the
first reactive gas and the second reactive gas.
5. The method of claim 1, wherein a supply of the first reactive
gas starts after a supply of the second reactive gas starts in
(b).
6. The method of claim 1, wherein a supply of the first reactive
gas starts after a supply of the second reactive gas is stopped in
(b).
7. The method of claim 1, wherein an amount of the first process
gas supplied in (a) is greater than that of the second process gas
supplied in (a).
8. The method of claim 1, wherein an amount of the first process
gas supplied in (a) is less than that of the second process gas
supplied in (a).
9. The method of claim 1, wherein a supply of the first process gas
starts after a supply of the second process gas starts in (a).
10. The method of claim 1, wherein a supply of the first process
gas starts after a supply of the second process gas is stopped in
(a).
11. The method of claim 1, wherein each of (a) and (b) is performed
at least once with a substrate support unit supporting the
substrate elevated, and each of (a) and (b) is performed at least
once with the substrate support unit supporting the substrate
lowered.
12. The method of claim 1, further comprising: (c) generating a
plasma of at least one selected from the group consisting of the
first process gas and the second process gas, and wherein each of
(a) and (b) is performed at least once while a distance between a
plasma adjusting electrode and the substrate is maintained at a
first distance in (c), each of (a) and (b) is performed at least
once while the distance between a plasma adjusting electrode and
the substrate is maintained at a second distance in (c).
13. The method of claim 12, wherein the second distance is shorter
than the first distance.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of U.S. patent application
Ser. No. 14/490,882 filed Sep. 19, 2014, entitled "Substrate
Processing Apparatus, Method of Manufacturing Semiconductor Device
and Non-Transitory Computer Readable Recording Medium," which
claims foreign priority under 35 U.S.C. .sctn.119(a)-(d) to
Application No. JP 2014-170371 filed on Aug. 25, 2014, the entire
contents of which are hereby incorporated by reference.
FIELD OF THE INVENTION
[0002] The present invention relates to a substrate processing
apparatus, a method of manufacturing a semiconductor device and a
non-transitory computer readable recording medium.
BACKGROUND
[0003] As the integration degree of a large-scale integrated
circuit (hereinafter referred to as "LSI") becomes higher, a
circuit pattern becomes finer.
[0004] A device should be formed in a small size to accommodate a
large number of semiconductor devices in a narrow area. To this
end, the widths of and distances between patterns that are to be
formed should be set to be small.
[0005] Recently, as a circuit pattern becomes finer, filling a fine
structure and particularly, filling a structure having a gap
(groove), which is deep in the vertical direction or that is narrow
in the horizontal direction, with an oxide by chemical vapor
deposition (CVD) has become technically limited. Also, it has been
difficult to uniformly etch or process a substrate having a groove
that is deep in the vertical direction by chemical mechanical
polishing (CMP). Also, in order to increase the yield of a
semiconductor device, it has been required to reduce a process time
for each substrate and a process time for a whole manufacturing
process of a semiconductor device.
[0006] Also, in order to increase the yield of the whole
manufacturing process of a semiconductor device, it has been
required to differently process a center portion and a peripheral
portion of a substrate during a film forming process.
[0007] Recently, a semiconductor device, a representative example
of which is an LSI, a dynamic random access memory (DRAM) or a
flash memory has been developed to have a minimum processing
dimension of less than 30 nm in width and a thin film thickness.
Thus, it has become difficult to form a fine semiconductor device,
improve the manufacturing throughput, or uniformly process a
substrate while maintaining the quality thereof constant.
SUMMARY
[0008] It is an object of the present invention to provide a
substrate processing apparatus capable of forming a film on a
substrate to have different thicknesses and features within a plane
of the substrate and improving the manufacturing throughput, a
method of manufacturing a semiconductor device, and a
non-transitory computer readable recording medium.
[0009] According to one aspect of the present invention, there is
provided a substrate processing apparatus including: a processing
chamber accommodating a substrate; a first process gas supply unit
configured to supply a first process gas from above the substrate;
a first reactive gas supply unit configured to supply a first
reactive gas from above the substrate; a second process gas supply
unit configured to supply a second process gas from a lateral
direction with respect to the substrate; a second reactive gas
supply unit configured to supply a second reactive gas from the
lateral direction with respect to the substrate; and a control unit
configured to control the first process gas supply unit, the second
process gas supply unit, the first reactive gas supply unit, and
the second reactive gas supply unit to: (a) supply the first
process gas from above the substrate and the second process gas
from the lateral direction with respect to the substrate; and (b)
supply the first reactive gas from above the substrate and the
second reactive gas from the lateral direction with respect to the
substrate, wherein each of the steps (a) and (b) is performed at
least once in a manner that: a total amount of the first process
gas and the second process gas supplied to a center portion of the
substrate is different from that of the first process gas and the
second process gas supplied to a peripheral portion of the
substrate; or a total amount of the first reactive gas and the
second reactive gas supplied to the center portion of the substrate
is different from that of the first reactive gas and the second
reactive gas supplied to the peripheral portion of the substrate in
at least one of the steps (a) and (b).
[0010] According to another aspect of the present invention, there
is provided a method of manufacturing a semiconductor device, the
method including: (a) supplying a first process gas from above a
substrate and a second process gas from a lateral direction with
respect to the substrate; and (b) supplying a first reactive gas
from above the substrate and a second reactive gas from the lateral
direction with respect to the substrate, wherein each of the steps
(a) and (b) is performed at least once in a manner that a total
amount of the first process gas and the second process gas supplied
to a center portion of the substrate is different from that of the
first process gas and the second process gas supplied to a
peripheral portion of the substrate; or a total amount of the first
reactive gas and the second reactive gas supplied to the center
portion of the substrate is different from that of the first
reactive gas and the second reactive gas supplied to the peripheral
portion of the substrate in at least one of the steps (a) and
(b).
[0011] According to another aspect of the present invention, there
is provided a non-transitory computer readable recording medium
causing a computer to perform: (a) supplying a first process gas
from above a substrate and a second process gas from a lateral
direction with respect to the substrate; and (b) supplying a first
reactive gas from above the substrate and a second reactive gas
from the lateral direction with respect to the substrate, wherein
each of the sequences (a) and (b) is performed at least once in a
manner that a total amount of the first process gas and the second
process gas supplied to a center portion of the substrate is
different from that of the first process gas and the second process
gas supplied to a peripheral portion of the substrate; or a total
amount of the first reactive gas and the second reactive gas
supplied to the center portion of the substrate is different from
that of the first reactive gas and the second reactive gas supplied
to the peripheral portion of the substrate in at least one of the
sequences (a) and (b).
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 is a schematic configuration diagram of a substrate
processing apparatus according to a first embodiment of the present
invention.
[0013] FIG. 2 is a schematic configuration diagram of a controller
according to an embodiment of the present invention.
[0014] FIG. 3 is a flowchart of a substrate processing process
according to an embodiment of the present invention.
[0015] FIG. 4 is a diagram illustrating a sequence of supplying a
gas according to an embodiment of the present invention.
[0016] FIG. 5 is a graph illustrating a distribution of thicknesses
of a film formed on a substrate according to an embodiment of the
present invention.
[0017] FIG. 6 is a diagram illustrating a sequence of supplying a
gas according to another embodiment of the present invention.
[0018] FIG. 7 is a diagram illustrating a sequence of supplying a
gas according to another embodiment of the present invention.
[0019] FIG. 8 is a diagram illustrating a sequence of supplying a
gas according to another embodiment of the present invention.
[0020] FIG. 9 is a schematic configuration diagram of a substrate
processing apparatus according to a second embodiment of the
present invention.
[0021] FIG. 10 is a schematic configuration diagram of a substrate
processing apparatus according to a third embodiment of the present
invention.
[0022] FIG. 11 is a schematic configuration diagram of a substrate
processing apparatus according to a third embodiment of the present
invention.
[0023] FIG. 12 is a diagram illustrating a sequence of supplying a
gas according to another embodiment of the present invention.
[0024] FIG. 13 is a diagram illustrating a sequence of supplying a
gas according to another embodiment of the present invention.
[0025] FIGS. 14A and 14B are diagrams illustrating stacked
structures of multiple films according to various embodiments of
the present invention.
[0026] FIG. 15 is a diagram illustrating a sequence of supplying a
gas according to another embodiment of the present invention.
DETAILED DESCRIPTION
[0027] Hereinafter, exemplary embodiments of the present invention
will be described.
First Embodiment
[0028] A first embodiment of the present invention will be
described with reference to the accompanying drawings below.
(1) Structure of Substrate Processing Apparatus
[0029] First, a substrate processing apparatus 100 according to the
first embodiment will be described.
[0030] The substrate processing apparatus 100 according to the
present embodiment will now be described. The substrate processing
apparatus 100 is a unit configured to form an insulating film, a
metal film, or the like and is configured as a single-wafer type
substrate processing apparatus as illustrated in FIG. 1.
[0031] Referring to FIG. 1, the substrate processing apparatus 100
includes a process container 202. The process container 202 is
configured, for example, as an airtight container having a flat
cylindrical circular cross-section. Also, the process container 202
is formed, for example, of a metal material, e.g., aluminum (Al) or
stainless steel (steel-use-stainless (SUS)) or quartz. In the
process container 202, a process space (processing chamber) 201 for
processing a wafer 200, such as a silicon wafer, serving as a
substrate, and a transfer space 203 are formed. The process
container 202 is configured by an upper container 202a, a lower
container 202b, a quartz container 202c and a lid 202d. A space
that is surrounded by the upper container 202a, the quartz
container 202c and the lid 202d and located above a substrate
placing table 212 will be hereinafter referred to as a `process
space 201`, and a space that is surrounded by the lower container
202b and located below the substrate placing table 212 will be
hereinafter referred to as the `transfer space 203`.
[0032] At a side of the lower container 202b, a substrate loading
exit 206 is installed adjacent to a gate valve 205. The wafer 200
is moved between adjacent transfer chambers (not shown) via the
substrate loading exit 206. A plurality of lift pins 207 are
installed on a bottom portion of the lower container 202b. Also,
the lower container 202b is connected to an earth potential
source.
[0033] In the process space 201, a substrate support unit 210 is
installed to support the wafer 200. The substrate support unit 210
mainly includes a placing surface 211 on which the wafer 200 is
placed, the substrate placing table 212 having the placing surface
211 on a surface thereof, and a heater 213 serving as a heating
unit included in the substrate placing table 212. In the substrate
placing table 212, through-holes 214 through which the lift pins
207 pass are installed in locations corresponding to the lift pins
207.
[0034] The substrate placing table 212 is supported by a shaft 217.
The shaft 217 passes through a bottom portion of the process
container 202 and is connected to a lifting mechanism 218 outside
the process container 202. By lifting the shaft 217 and the
substrate placing table 212 by operating the lifting mechanism 218,
the wafer 200 placed on the placing surface 211 may be moved
upward. Also, the circumference of a lower end portion of the shaft
217 is covered with a bellows 219 and the inside of the process
container 202 is maintained in an airtight state.
[0035] The substrate placing table 212 is moved downward to the
substrate support unit 210 to move the placing surface 211 to the
substrate loading exit 206 (i.e., a wafer transfer position) so as
to transfer the wafer 200, and is moved upward to move the wafer
200 to a processing position in the process space 201 (i.e., a
wafer processing position) so as to process the wafer 200 as
illustrated in FIG. 1.
[0036] In detail, when the substrate placing table 212 is moved
downward to the wafer transfer position, upper end portions of the
lift pins 207 protrude from an upper surface of the placing surface
211 to support the wafer 200 with the lift pins 207 from below.
When the substrate placing table 212 is moved upward to the wafer
processing position, the lift pins 207 are buried from the upper
surface of the placing surface 211 so that the wafer 200 may be
supported by the placing surface 211 from below. Also, the lift
pins 207 are in direct contact with the wafer 200 and are thus
preferably formed of, for example, quartz or alumina.
[Activation Unit]
[0037] A coil 250a is installed as an activation unit near the
quartz container 202c. A variable condenser 250d and a
high-frequency power source 250c are connected to the coil 250a via
an insulation transformer 250e. By supplying high-frequency power
to the coil 250a, a gas supplied into the processing chamber 201
may be excited to generate plasma.
[Exhaust System]
[0038] An exhaust port 221 serving as a first exhaust unit for
exhausting an atmosphere in the processing chamber 201 is installed
on an inner wall of the transfer space 203 (the lower container
202b). The exhaust port 221 is connected to an exhaust pipe 222. A
pressure adjuster 223 such as an auto pressure controller (APC)
configured to control the inside of the processing chamber 201 to
have a predetermined pressure and a vacuum pump 224 are
sequentially connected in series to the exhaust pipe 222. An
exhaust system (exhaust line) mainly includes the exhaust port 221,
the exhaust pipe 222, and the pressure adjuster 223. The vacuum
pump 224 may be further included in the exhaust system (exhaust
line).
[Upper Gas Introduction Port]
[0039] An upper gas introduction port 241a is installed at an
upstream end of a gas rectification unit 234 installed at an upper
portion of the process space 201 to provide various gases into the
process space 201.
[Upper Gas Supply Unit]
[0040] A common gas supply pipe 242 is connected to the upper gas
introduction port 241a installed at the upstream end of the gas
rectification unit 234. A first process gas supply pipe 243a, a
first reactive gas supply pipe 244a, a first purge gas supply pipe
245a and a cleaning gas supply pipe 248a are connected to the
common gas supply pipe 242.
[0041] A first-element containing gas (first process gas) is mainly
supplied from a first process gas supply unit including the first
process gas supply pipe 243a). A second-element containing gas
(first reactive gas) is mainly supplied from a second process gas
supply unit including the first reactive gas supply pipe 244a. A
purge gas is mainly supplied from a first purge gas supply unit
including the first purge gas supply pipe 245a when a wafer is
processed, and a cleaning gas is mainly supplied from the first
purge gas supply unit when the processing chamber 201 is
cleaned.
[First Process Gas Supply Unit]
[0042] At the first process gas supply pipe 243a, a first process
gas source 243b, a mass flow controller (MFC) 243c which is a flow
rate controller (flow rate control unit) and a valve 243d which is
an opening/closing valve are sequentially installed from an
upstream direction.
[0043] A gas containing a first element (first process gas) is
supplied from the first process gas source 243b, and supplied to a
gas rectification unit 234 via the MFC 243c, the valve 243d, the
first process gas supply pipe 243a and the common gas supply pipe
242.
[0044] The first process gas is a source gas, i.e., one of the
process gases. Here, the first element is, for example, silicon
(Si). That is, the first process gas is, for example, a
silicon-containing gas. For example, dichlorosilane (SiH2Cl2,
abbreviated as `DCS`) gas may be used as silicon-containing gas. A
source of the first process gas may have a solid, liquid, or
gaseous state at normal temperature and pressure. When the first
process gas has a liquid state at normal temperature and pressure,
a vaporizer (not shown) may be installed between the first process
gas source 243b and the MFC 243c. Here, it is assumed that the
source is in a gaseous state.
[First Carrier Gas Supply Unit]
[0045] A downstream end of a first carrier gas supply pipe 246a is
connected to the first process gas supply pipe 243a at a downstream
side of the valve 243d. A carrier gas source 246b, an MFC 246c
which is a flow rate controller (flow rate control unit) and a
valve 246d which is an opening/closing valve are sequentially
installed to the first carrier gas supply pipe 246a from an
upstream direction. A first carrier gas supply unit includes at
least the first carrier gas supply pipe 246a, the MFC 246c and the
valve 246d.
[0046] Here, a carrier gas is, for example, nitrogen (N.sub.2) gas.
In addition to the N.sub.2 gas, for example, a rare gas such as
helium (He) gas, neon (Ne) gas, or argon (Ar) gas may be used as
the carrier gas. The carrier gas acts as a carrier gas, a dilution
gas, or a purge gas in a film forming process (operations S203 to
S207).
[0047] A first-element containing gas supply unit (which may be
also referred to as a silicon-containing gas supply unit) mainly
includes the first process gas supply pipe 243a, the MFC 243c and
the valve 243d.
[0048] The carrier gas source 246b and the first process gas supply
pipe 243a may be further included in the first carrier gas supply
unit.
[0049] The first process gas source 243b and the first carrier gas
supply unit may be further included in the first-element containing
gas supply unit.
[First Reactive Gas Supply Unit]
[0050] A first reactive gas source 244b, an MFC 244c which is a
flow rate controller (flow rate control unit) and a valve 244d
which is an opening/closing valve are sequentially installed at an
upstream end of the first reactive gas supply pipe 244a from the
upstream side.
[0051] A gas containing a second element (hereinafter referred to
as a `first reactive gas`) is supplied from the first reactive gas
source 244b and supplied to the gas rectification unit 234 via the
MFC 244c, the valve 244d, the first reactive gas supply pipe 244a
and the common gas supply pipe 242.
[0052] The first reactive gas is one of the process gases. The
first reactive gas may be considered as a modifying gas.
[0053] Here, the first reactive gas contains a second element that
is different from the first element. The second element includes,
for example, at least one among oxygen (O), nitrogen (N), carbon
(C) and hydrogen (H) which are elements that are likely to react
with (or be bound to) the first element. In the present embodiment,
the first reactive gas is, for example, a nitrogen-containing gas.
In detail, ammonia (NH.sub.3) gas is used as the
nitrogen-containing gas.
[0054] A first reactive gas supply unit mainly includes the first
reactive gas supply pipe 244a, the MFC 244c and the valve 244d.
[Second Carrier Gas Supply Unit]
[0055] A downstream end of a second carrier gas supply pipe 247a is
connected to the first reactive gas supply pipe 244a at a
downstream side of the valve 244d. A carrier gas source 247b, an
MFC 247c which is a flow rate controller (flow rate control unit)
and a valve 247d which is an opening/closing valve are sequentially
installed at the second carrier gas supply pipe 247a from the
upstream direction. A second carrier gas supply unit includes at
least the second carrier gas supply pipe 247a, the MFC 247c and the
valve 247d.
[0056] A carrier gas is supplied to the gas rectification unit 234
from the second carrier gas supply pipe 247a via the MFC 247c, the
valve 247d and the first reactive gas supply pipe 247a.
[0057] The carrier gas source 247b and the first reactive gas
supply pipe 244a may be further included in the second carrier gas
supply unit.
[0058] The first reactive gas source 244b and the second carrier
gas supply unit may be further included in the first reactive gas
supply unit.
[First Purge Gas Supply Unit]
[0059] A first purge gas source 245b, an MFC 245c which is a flow
rate controller (flow rate control unit) and a valve 245d which is
an opening/closing valve are sequentially installed at the first
purge gas supply pipe 245a from the upstream direction.
[0060] An inert gas is supplied as a purge gas from the first purge
gas source 245b, and supplied to the gas rectification unit 234 via
the MFC 245c, the valve 245d, the first purge gas supply pipe 245a
and the common gas supply pipe 242.
[0061] Here, the inert gas is, for example, nitrogen (N.sub.2) gas.
In addition to the N.sub.2 gas, for example, a rare gas such as
helium (He) gas, neon (Ne) gas, or argon (Ar) gas may be used as
the inert gas.
[0062] A first purge gas supply unit (which is also referred to as
a purge gas supply unit) mainly includes the first purge gas supply
pipe 245a, the MFC 245c and the valve 245d.
[0063] The inventors of the present invention have found that the
degree of flatness of a semiconductor device to be finally formed
can be improved by forming a film on the wafer 200 such that the
thickness or quality of the film is different, for example, at a
center portion and a peripheral portion of the wafer 200 during
processing of the wafer 200 even when the uniformity of the wafer
200 processed in an etching process or a CMP process performed
after the forming of the film is different at the center portion
and the peripheral portion of the wafer 200.
[0064] A structure of an apparatus that enables to form a film such
that the thickness or quality of the film is different at the
center portion and the peripheral portion of the wafer 200 will be
described below.
[Flank Gas Introduction Port]
[0065] As illustrated in FIG. 1, flank gas introduction ports 241b
and 241c may be installed at side surfaces of the upper container
202a and a rate of the amounts of gases to be supplied via the
upper gas introduction port 241a and the flank gas introduction
ports 241b and 241c may be changed to form a film such that the
thickness or quality of the film is different at the center portion
and the peripheral portion of the wafer 200. The flank gas
introduction ports 241b and 241c are installed to surround around
the wafer 200. A second process gas supply pipe 243e is connected
to the flank gas introduction port 241b, and a second reactive gas
supply pipe 244e is connected to the flank gas introduction port
241c.
[Second Process Gas Supply Unit]
[0066] A second process gas source 243f, an MFC 243g and a valve
243h are sequentially installed at the second process gas supply
pipe 243e from the upstream direction.
[0067] A gas containing the first element described above is
supplied from the second process gas source 243f, and supplied to
the flank gas introduction port 241b via the MFC 243g, the valve
243h and the second process gas supply pipe 243e. A second process
gas is supplied along the outer circumference of the wafer 200 via
the gas introduction port 241b.
[0068] The second process gas is similar to the first process gas
described above. Also, the second process gas may be a gas
containing a third element that is different from the first
element.
[Third Carrier Gas Supply Unit]
[0069] A downstream end of a third carrier gas supply pipe 246e is
connected to the second process gas supply pipe 243e at a
downstream side of the valve 243h. A carrier gas source 246f, an
MFC 246g and a valve 246h are sequentially installed at the third
carrier gas supply pipe 246e from the upstream direction. A third
carrier gas supply unit includes at least the third carrier gas
supply pipe 246e, the MFC 246g, and the valve 246h.
[0070] The second process gas supply unit mainly includes the
second process gas supply pipe 243e, the MFC 243g and the valve
243h.
[0071] Also, the second process gas supply unit may include the
third carrier gas supply unit.
[Second Reactive Gas Supply Unit]
[0072] A second reactive gas source 244f, an MFC 244g and a valve
244h are sequentially installed at the second reactive gas supply
pipe 244e from the upstream direction.
[0073] A gas containing the second element described above is
supplied from the second reactive gas source 244f and supplied to
the flank gas introduction port 241c via the MFC 244g, the valve
244h and the second reactive gas supply pipe 244e.
[Fourth Carrier Gas Supply Unit]
[0074] A downstream end of a fourth carrier gas supply pipe 247e is
connected to the second reactive gas supply pipe 244e at a
downstream side of the valve 244h. A carrier gas source 247f, an
MFC 247g and a valve 247h are sequentially installed at the fourth
carrier gas supply pipe 247e from the upstream direction.
[0075] A fourth carrier gas supply unit mainly includes the fourth
carrier gas supply pipe 244e, the MFC 244g and the valve 244h.
[0076] A fourth carrier gas supply unit mainly includes a fourth
carrier gas supply pipe 247e, an MFC 247g and a valve 247h. The
fourth carrier gas supply unit may be included in a second reactive
gas supply unit.
[Second Purge Gas Supply Unit]
[0077] A second purge gas source 245f, an MFC 245g and a valve 245h
are sequentially installed at a second purge gas supply pipe 245e,
which constitutes a second purge gas supply unit, from the upstream
direction.
[0078] An inert gas is supplied as a purge gas from the second
purge gas source 245f and supplied to the flank gas introduction
port 241c via the MFC 245g, the valve 245h and the second purge gas
supply pipe 245e.
[0079] Here, the inert gas is, for example, nitrogen (N.sub.2) gas.
In addition to the N.sub.2 gas, for example, a rare gas such as
helium (He) gas, neon (Ne) gas, or argon (Ar) gas may be used as
the inert gas.
[0080] A second purge gas supply unit (which is also referred to as
a purge gas supply unit) mainly includes the second purge gas
supply pipe 245e, the MFC 245g and the valve 245h.
[Cleaning Gas Supply Unit]
[0081] A cleaning gas source 248b, an MFC 248c, a valve 248d and a
remote plasma unit (RPU) 250b are sequentially installed at the
cleaning gas supply pipe 248a from the upstream direction.
[0082] A cleaning gas is supplied from the cleaning gas source
248b, and supplied to the gas rectification unit 234 via the MFC
248c, the valve 248d, the RPU 250b, the cleaning gas supply pipe
248a and the common gas supply pipe 242.
[0083] A downstream end of a fifth carrier gas supply pipe 249a is
connected to the cleaning gas supply pipe 248a at a downstream side
of the valve 248d. A fifth carrier gas source 249b, an MFC 249c and
a valve 249d are sequentially installed at the fifth carrier gas
supply pipe 249a from the upstream direction.
[0084] A cleaning gas supply unit mainly includes the cleaning gas
supply pipe 248a, the MFC 248c, and the valve 248d. The cleaning
gas source 248b, the fifth carrier gas supply pipe 249a and the RPU
250b may be included in the cleaning gas supply unit.
[0085] Also, an inert gas supplied from the fifth carrier gas
source 249b may be supplied to be used as a carrier gas or a
dilution gas of a cleaning gas.
[0086] A cleaning gas supplied from the cleaning gas source 248b
acts as a cleaning gas for removing a by-product attached to the
gas rectification unit 234 or the processing chamber 201 in a
cleaning process.
[0087] Here, the cleaning gas is, for example, nitrogen trifluoride
(NF.sub.3) gas. Also, for example, hydrofluoric acid (HF) gas,
chlorine trifluoride (ClF.sub.3) gas, fluorine (F.sub.2) gas, or a
combination thereof may be used as the cleaning gas.
[Control Unit]
[0088] As illustrated in FIG. 1, the substrate processing apparatus
100 includes a controller 121 configured to control operations of
various elements of the substrate processing apparatus 100.
[0089] As illustrated in FIG. 2, the controller 121 which is a
control unit (control means) is configured as a computer including
a central processing unit (CPU) 121a, a random access memory (RAM)
121b, a memory device 121c and an input/output (I/O) port 121d. The
RAM 121b, the memory device 121c and the I/O port 121d are
configured to exchange data with the CPU 121a via an internal bus
121e. The controller 121 is configured to be connected to an I/O
device 122 embodied as, for example, a touch panel or an external
memory device 283.
[0090] The memory device 121c includes, for example, a flash
memory, a hard disk memory (HDD), etc. In the memory device 121c, a
control program for controlling an operation of a substrate
processing apparatus, a process recipe including the order or
conditions of substrate processing which will be described below,
and the like is stored to be readable. The process recipe is a
combination of sequences of a substrate processing process which
will be described below to obtain a desired result when the
sequences are performed by the controller 121, and acts as a
program. Hereinafter, the process recipe, the control program, etc.
will be referred to together simply as a `program.` Also, when the
term `program` is used in the present disclosure, it may be
understood as including only a process recipe, only a control
program, or both of the process recipe and the control program. The
RAM 121b is configured as a memory area (work area) in which a
program or data read by the CPU 121a is temporarily retained.
[0091] The I/O port 121d is connected to the gate valve 205, the
lifting mechanism 218, the pressure adjuster 223, the vacuum pump
224, the RPU 250b, the MFCs 243c, 243g, 244c, 244g, 245c, 245g,
246c, 246g, 247c, 247g, 248c and 249c, the valves 243d, 243h, 244d,
244h, 245d, 245h, 246d, 246h, 247d, 247h, 248d and 249d, and the
heater 213, etc.
[0092] The CPU 121a is configured to read and execute the control
program from the memory device 121c and to read the process recipe
from the memory device 121c according to a manipulation command
input via the I/O device 122. According to the read process recipe,
the CPU 121a is configured to control opening/closing the gate
valve 205; control upward/downward movement of the lifting
mechanism 218; control adjustment of pressure using the pressure
adjuster 223; control the vacuum pump 224 to be `on`/`off`; control
excitation of a gas using the RPU 250b; control flow rates of gases
using the MFCs 243c, 243g, 244c, 244g, 245c, 245g, 246c, 246g,
247c, 247g, 248c and 249c; control gases to be `on`/`off` using the
valves 243d, 243h, 244d, 244h, 245d, 245h, 246d, 246h, 247d, 247h,
248d and 249d; and control a temperature control of the heater
213.
[0093] The controller 121 is not limited to a dedicated computer
and may be configured as a general-purpose computer. For example,
the controller 121 according to the present embodiment may be
configured by preparing the external memory device 283 storing a
program as described above, such as a magnetic disk (e.g., a
magnetic tape, a flexible disk, a hard disk, etc.), an optical disc
(e.g., a compact disc (CD), a digital versatile disc (DVD), etc.),
a magneto-optical (MO) disc, or a semiconductor memory (e.g., a
Universal Serial Bus (USB) memory, a memory card, etc.), and then
installing the program in a general-purpose computer using the
external memory device 283. However, means for supplying a program
to a computer are not limited to using the external memory device
283. For example, a program may be supplied to a computer using
communication means, e.g., the Internet or an exclusive line,
without using the external memory device 283. The memory device
121c or the external memory device 283 may be configured as a
non-transitory computer-readable recording medium. Hereinafter, the
memory device 121c and the external memory device 283 may also be
referred to together simply as a `recording medium.` When the term
`recording medium` is used in the present disclosure, it may be
understood as only the memory device 121c, only the external memory
device 283, or both of the memory device 121c and the external
memory device 283.
(2) Substrate Processing Process
[0094] Next, a process of forming a silicon nitride
(Si.sub.xN.sub.y) film using DCS gas and ammonia (NH.sub.3) gas
which is a process of manufacturing a semiconductor device will be
described as an example of a substrate processing process.
[0095] FIG. 3 is a sequence diagram of a substrate processing
process performed by substrate processing apparatus according to an
embodiment of the present invention. In FIG. 3, sequences of a
process of forming a silicon nitride (Si.sub.xN.sub.y) film on the
wafer 200 as a substrate by performing a treatment using plasma are
illustrated.
[Substrate Loading Process (Operation S201)]
[0096] In order to form a film, first, the wafer 200 is loaded into
the processing chamber 201. In detail, the substrate support unit
210 is moved downward by the lifting mechanism 218 such that the
lift pins 207 protrude from an upper surface of the substrate
support unit 210 via the through-holes 214. Also, the inside of the
processing chamber 201 is regulated to have a predetermined
pressure, and the gate valve 205 is opened to place the wafer 200
on the lift pins 207 via the gate valve 205. After the wafer 200 is
placed on the lift pins 207, the substrate support unit 210 is
moved upward to a predetermined position by the lifting mechanism
218 to place the wafer 200 on the substrate support unit 210 from
the lift pins 207.
[Pressure Reducing & Temperature Raising Process (Operation
S202)]
[0097] Then, the inside of the processing chamber 201 is exhausted
via the exhaust pipe 222 such that the inside of the processing
chamber 201 has a predetermined pressure (degree of vacuum). In
this case, the degree of openness of an APC valve as the pressure
adjuster 223 is feedback controlled based on a pressure measured by
a pressure sensor. Also, the amount of electric power to be
supplied to the heater 213 is feedback controlled based on a
temperature sensed by a temperature sensor (not shown) such that
the inside of the processing chamber 201 has a predetermined
temperature. In detail, a susceptor is heated beforehand and
allowed to stand for a predetermined time after which the
temperature of the wafer 200 or the susceptor is constantly
maintained. During this operation, moisture remaining in the
processing chamber 201, a gas escaped from a member, etc. is
removed by vacuum exhaustion or by purging performed by supplying
N.sub.2 gas, thereby completing a prior preparation for a film
forming process.
[0098] After the prior preparation for the film forming process is
completed, a process gas supply process (operation S203), a purging
process (operation S204), a reactive gas supply process (operation
S205) and a purging process (operation S206) are performed.
[Process Gas Supply Process (Operation S203)]
[0099] Next, as illustrated in FIG. 4, DCS gas is supplied as a
first process gas (source gas) into the processing chamber 201 via
the first process gas supply unit. Also, the inside of the
processing chamber 201 is continuously exhausted using the exhaust
system to control the inside pressure of the processing chamber 201
to be equal to a predetermined pressure (first pressure). In
detail, the valve 243d of the first process gas supply pipe 243a
and the valve 246d of the first carrier gas supply pipe 246a are
opened to supply the DCS gas into the first process gas supply pipe
243a and N.sub.2 gas into the first carrier gas supply pipe 246a.
The DCS gas is supplied via the first process gas supply pipe 243a
and the flow rate of the DCS gas is adjusted by the MFC 243c. The
N.sub.2 gas is supplied via the first carrier gas supply pipe 246a
and the flow rate of the N.sub.2 gas is adjusted by the MFC 246c.
The flow-rate adjusted DCS gas is mixed with the flow-rate adjusted
N.sub.2 gas in the first process gas supply pipe 243a, supplied
into the processing chamber 201 via the gas rectification unit 234,
and exhausted via the exhaust pipe 222. In this case, in the
processing chamber 201, the first process gas supplied from a
center portion of the gas rectification unit 234 is supplied at a
high density to a center portion of the wafer 200, supplied at a
low density to a peripheral portion of the wafer 200, compared to
the center portion of the wafer 200, and exhausted via the exhaust
pipe 222. A process gas supplied from a peripheral portion of the
gas rectification unit 234 is supplied to the peripheral portion of
the wafer 200 and exhausted via the exhaust pipe 222.
[0100] Also, DCS gas is supplied as a second process gas into the
processing chamber 201 via the flank gas introduction port 241b. In
detail, the valve 243h of the second process gas supply pipe 243e
and the valve 246h of the third carrier gas supply pipe 246e are
opened to supply the DCS gas to the second process gas supply pipe
243e and N.sub.2 gas to the third carrier gas supply pipe 246e. The
DCS gas is supplied via the second process gas supply pipe 243e and
the flow rate of the DCS signal is adjusted by the MFC 243g. The
N.sub.2 gas is supplied via the third carrier gas supply pipe 246e
and the flow rate of the N.sub.2 gas is adjusted by the MFC 246g.
The flow-rate adjusted DCS gas is mixed with the flow-rate adjusted
N.sub.2 gas in the second process gas supply pipe 243e, supplied
into the heated or pressure-reduced processing chamber 201 via the
flank gas introduction port 241b, and exhausted via the exhaust
pipe 222. Here, most of the second process gas does not reach the
center portion of the wafer 200 and flows to the exhaust pipe
222.
[0101] Also, the supply state of the second process gas supplied to
the center portion of the wafer 200 may be controlled by adjusting
the height of the substrate placing table 212. The concentration of
a gas supplied to the peripheral portion of the wafer 200 may be
increased by moving the placing surface 211 of the substrate
placing table 212 upward to the vicinity of a lower end of the
flank gas introduction port 241c. The concentration of the gas
supplied to the peripheral portion of the wafer 200 may be reduced
to be lower than that of the gas supplied to the center portion of
the wafer 200 and the concentration of the gas supplied to the
center portion of the wafer 200 may be increased by moving the
substrate placing table 212 downward.
[0102] In this case, the first process gas may be supplied
simultaneously with the second process gas.
[0103] In the present embodiment, a supply amount means a gas flow
rate.
[0104] In this case, the DCS gas is supplied to the wafer 200
[source gas (DCS) supply process]. The DCS gas is supplied into the
processing chamber 201 at a predetermined pressure (first pressure,
e.g., in a range of 100 Pa to 10,000 Pa). The DCS gas is supplied
to the wafer 200 under this condition. By supplying the DCS gas, a
silicon-containing layer is adsorbed (chemically or physically
adsorbed) onto the wafer 200. The silicon-containing layer means a
layer containing either silicon (Si) or silicon and chlorine
(Cl).
[0105] Also, by supplying the first process gas in a larger amount
than the second process gas, the silicon-containing layer is more
thickly formed on the center portion of than on the peripheral
portion of the wafer 200.
[Purging Process (Operation S204)]
[0106] After the silicon-containing layer is adsorbed onto the
wafer 200, the valve 243d of the first process gas supply pipe 243a
and the valve 243h of the second process gas supply pipe 243e are
closed to stop the supply of the DCS gas. In this case, the
pressure adjuster 223 of the exhaust pipe 222 is fully opened to
vacuum-exhaust the inside of the processing chamber 201 with the
vacuum pump 224, and the DCS gas (that did not react or after
contributing to the formation of the silicon-containing layer)
remaining in the processing chamber 201 is eliminated from the
inside of the processing chamber 201. Also, the valve 245d of the
first purge gas supply unit may be opened to supply an inert gas
into the first purge gas supply pipe 245a and a gas flowing in the
processing chamber 201 may be extruded via the gas rectification
unit 234. The flow rate of the inert gas flowing through the first
purge gas supply pipe 245a is controlled by the MFC 245c. Here, in
the processing chamber 201, a first purge gas supplied from a
center portion of the gas rectification unit 234 is supplied to the
center portion of the wafer 200, supplied to the peripheral portion
of the wafer 200, and exhausted via the exhaust pipe 222. The first
purge gas supplied from a peripheral portion of the gas
rectification unit 234 is supplied to the peripheral portion of the
wafer 200 and exhausted via the exhaust pipe 222.
[0107] Also, the valve 245h of the second purge gas supply unit is
opened to supply an inert gas to the second purge gas supply pipe
245e and a gas flowing in the processing chamber 201 is extruded
via the flank gas introduction port 241c. The flow rate of the
inert gas flowing through the second purge gas supply pipe 245e is
controlled by the MFC 245g.
[0108] Also, N.sub.2 gas may be continuously supplied as an inert
gas into the processing chamber 201 while the valve 246d and the
valve 246h are open. The N.sub.2 gas that is continuously supplied
via the valve 246d and the valve 246h acts as a purge gas. Due to
the N.sub.2 gas, the first process gas supply pipe 243a, the common
gas supply pipe 242 and the second process gas supply pipe 243e, an
effect of eliminating the DCS gas (that did not react or after
contributing to the formation of the silicon-containing layer)
remaining in the processing chamber 201 may be greatly
increased.
[0109] Also, in this case, a gas remaining in the processing
chamber 201, the gas rectification unit 234, the flank gas
introduction port 241b, etc. is preferably completely eliminated
but may not be completely purged (the inside of the processing
chamber 201 may not be completely purged).
[0110] In this case, the temperature of the heater 213 is set to be
maintained at a temperature that is in a range of 300.degree. C. to
650.degree. C., preferably, a range of 300.degree. C. to
600.degree. C., and more preferably, a range of 300.degree. C. to
550.degree. C., similar to when a source gas is supplied to the
wafer 200. The flow rate of the N.sub.2 gas supplied as a purge gas
via each inert gas supply unit is set, for example, to be in a
range of 100 sccm to 20,000 sccm. In addition to the N.sub.2 gas, a
rare gas such as Ar, He, Ne, or Xe may be used as the purge
gas.
[Reactive Gas Supply Process (Operation S205)]
[0111] After the DCS gas remaining in the processing chamber 201 is
removed, the supply of the purge gas is stopped and NH.sub.3 gas is
supplied as a first reactive gas. Also, the inside of the
processing chamber 201 is continuously exhausted by the exhaust
system to control the inside pressure of the processing chamber 201
to be equal to a predetermined pressure (a second pressure). In
detail, the valve 244d of the first reactive gas supply pipe 244a
is opened to supply NH.sub.3 gas into the first reactive gas supply
pipe 244a. The NH.sub.3 gas is supplied via the first reactive gas
supply pipe 244a and the flow rate thereof is adjusted by the MFC
244c. The flow-rate adjusted NH.sub.3 gas is supplied into the
processing chamber 201 via the gas rectification unit 234 and
exhausted via the exhaust pipe 222. In this case, in the processing
chamber 201, the first reactive gas supplied from the center
portion of the gas rectification unit 234 is supplied at a high
concentration to the center portion of the wafer 200, supplied to
the peripheral portion of the wafer 200, and exhausted via the
exhaust pipe 222. The first reactive gas supplied from the
peripheral portion of the gas rectification unit 234 is supplied to
the peripheral portion of the wafer 200 and exhausted via the
exhaust pipe 222.
[0112] Also, NH.sub.3 gas is supplied as a second reactive gas via
the flank gas introduction port 241c. In detail, the valve 244h of
the second reactive gas supply pipe 244e is opened to supply the
NH.sub.3 gas into the second reactive gas supply pipe 244e. The
flow rate of the NH.sub.3 gas is adjusted by the MFC 244c and the
flow-rate adjusted NH.sub.3 gas flows into the second reactive gas
supply pipe 244e. The flow-rate adjusted NH.sub.3 gas is supplied
into the processing chamber 201 which is in a reduced-pressure
state via the flank gas introduction port 241c, and exhausted via
the exhaust pipe 222. Here, the second reactive gas is supplied
such that an effect of supplying the second reactive gas is lower
than that of supplying the first reactive gas. The effect of
supplying the first reactive gas means an effect of causing the
thickness of a film on the center portion of the wafer 200 to be
thicker than that of the film on the peripheral portion of the
wafer 200. The effect of supplying the second reactive gas means an
effect of causing the thickness of a film on the center portion of
the wafer 200 to be thinner than that of the film on the peripheral
portion of the wafer 200. Also, an effect of supplying a gas may be
understood as affecting not only the thickness of a film on the
center portion and the peripheral portion of the wafer 200 but also
the quality of the film on the center portion of the wafer 200 and
the peripheral portion of the wafer 200 to be different.
[0113] Also, the supply state of the second reactive gas supplied
to the wafer 200 may be controlled by adjusting the height of the
substrate placing table 212. The concentration of a gas to be
supplied to the peripheral portion of the wafer 200 may be improved
by moving the placing surface 211 of the substrate placing table
212 upward to the vicinity of a lower end of the flank gas
introduction port 241c, and may be reduced to be lower than the
concentration of the gas to be supplied to the center portion of
the wafer 200 by moving the substrate placing table 212 downward so
as to increase the concentration of the gas at the center portion
of the wafer 200.
[0114] The NH.sub.3 gas supplied to the wafer 200 reacts with the
silicon-containing layer formed on the wafer 200 to nitridate
silicon and discharge impurities such as hydrogen, chlorine,
hydrogen chloride, etc. A distribution of the degree of the
reaction occurring on the wafer 200 may be controlled by adjusting
the location of the substrate placing table 212, the amount of the
first reactive gas supplied from an upward direction, and the
amount of the first reactive gas supplied from a lateral
direction.
[Purging Process (Operation S206)]
[0115] After the reactive gas supply process, the supply of the
reactive gas is stopped and a purging process is performed similar
to the purging process (operation S204). By performing the purging
process, the NH.sub.3 gas (that did not react or after contributing
to the nitriding of the silicon) remaining in the first reactive
gas supply pipe 244a, the common gas supply pipe 242, the second
reactive gas supply pipe 244e, the processing chamber 201, etc. may
be eliminated. By eliminating the residual gas, an undesired film
may be suppressed from being formed due to the residual gas.
[Repetitive Process (Operation S207)]
[0116] A silicon nitride (Si.sub.xN.sub.y) layer is deposited on
the wafer 200 at a predetermined thickness by performing the
process gas supply process (operation S203), the purging process
(operation S204), the reactive gas supply process (operation S205),
and the purging process (operation S206) once. By repeatedly
performing these processes, the thickness of the silicon nitride
layer formed on the wafer 200 may be controlled. These processes
may be repeatedly performed a predetermined number of times until
the thickness of the silicon nitride layer becomes equal to a
desired level.
[Substrate Unloading Process (Operation S208)]
[0117] After these processes are repeatedly performed the
predetermined number of times in the repetitive process (operation
S207), a substrate unloading process (operation S208) is performed
to unload the wafer 200 from the processing chamber 201. In detail,
the temperature of the wafer 200 is lowered to a temperature
sufficient for the wafer 200 to be unloaded, and the inside of the
processing chamber 201 is purged using an inert gas and regulated
to a pressure sufficient for transfer. After the pressure
regulation, the substrate support unit 210 is moved downward by the
lifting mechanism 218, the lift pins 207 protrude via the
through-holes 214, and then the wafer 200 is placed on the lift
pins 207. After the wafer 200 is placed on the lift pins 207, the
gate valve 205 is opened to unload the wafer 200 from the
processing chamber 201.
(3) Effects of the Present Embodiment
[0118] According to the present embodiment, the following one or
more effects can be achieved.
[0119] (a) A thickness distribution of a film formed on a
substrate, a quality distribution of the film, or both of the
thickness distribution and the quality distribution may be set to
be different at a center portion and a peripheral portion of the
substrate. For example, a film having a film thickness distribution
as illustrated in FIG. 5 may be formed. In the gas supply sequence
according to the previous embodiment illustrated in FIG. 4, an
effect of supplying a gas from above the wafer 200 may be increased
and a film having the film thickness distribution A of FIG. 5 (in
which a center portion of a substrate is thicker and a peripheral
portion of the substrate is thinner) may be formed. When an effect
of supplying a gas from a lateral direction with respect to the
wafer 200 is increased, a film having a film thickness distribution
B (in which a center portion of a substrate is thinner and a
peripheral portion of the substrate is thicker) may be formed.
Here, the effect of supplying a gas means an effect of causing one
or both of a film thickness distribution and a film quality
distribution to be different at the center portion and the
peripheral portion of the substrate.
[0120] (b) The quality of a film formed on a center portion and a
peripheral portion of a substrate may be set to be different. For
example, the features of a film, such as a density, a crystalline
property, a composition, a resistivity, film stress, an electric
property, a permittivity, etc., may be set at the center portion
and the peripheral portion of the substrate.
[0121] (c) By activating a reactive gas, the difference between the
thicknesses or qualities of a film formed on the center portion and
the peripheral portion of the wafer 200 may be increased.
[0122] (d) By activating the reactive gas using a coil, the states
of active species on the center portion and the peripheral portion
of the wafer 200 may be set to be different.
[0123] Although a gas supply sequence in which a film is formed
such that the thicknesses thereof are different at the center
portion and the peripheral portion of the wafer 200 are different
has been described above, the present invention is not limited
thereto and the following sequences may be used.
[0124] For example, a gas supply sequence illustrated in FIG. 6 may
be used. As illustrated in FIG. 6, in the reactive gas supply
process (operation S205), an effect of supplying a first reactive
gas is set to be lower than an effect of supplying a second
reactive gas so as to increase an effect of supplying a process gas
from a lateral direction with respect to the wafer 200. A film
having the film thickness distribution B illustrated in FIG. 5 may
be formed using such a gas supply method. Here, for example, the
flow rate of the first reactive gas is set to be less than that of
the second reactive gas so that the effect of supplying the first
reactive gas may be lower than the effect of supplying the second
reactive gas.
[0125] Also, a gas supply sequence illustrated in FIG. 7 may be
used. As illustrated in FIG. 7, a film having the film thickness
distribution A of FIG. 5 may be formed by setting an effect of
supplying a first process gas and an effect of supplying a second
process gas to be the same in the process gas supply process
(operation S203), setting an effect of supplying a first purge gas
and an effect of supplying a second purge gas to be the same in the
purging processes (operations S204 and S206), and setting an effect
of supplying a first reactive gas and an effect of supplying a
second reactive gas to be the same in the reactive gas supply
process (operation S205) so as to increase the degree of reaction
at the center portion of the wafer 200. Here, for example, the flow
rate of the first reactive gas is set to be higher than that of the
second reactive gas so that the effect of supplying the first
reactive gas may be greater than the effect of supplying the second
reactive gas.
[0126] Also, a gas supply sequence illustrated in FIG. 8 may be
used. As illustrated in FIG. 8, an effect of supplying a reactive
gas to the peripheral portion of the wafer 200 may be adjusted to
be greater than an effect of supplying the reactive gas to the
center portion of the wafer 200 by setting a duration of supplying
the first reactive gas to be shorter than a duration of supplying
the second reactive gas in the reactive gas supply process
(operation S205), thereby forming a film having the film thickness
distribution B of FIG. 5.
[0127] Although the processes of sequentially supplying gases have
been described in the previous embodiment, the present invention is
not limited thereto and gases supplied in one or both of the
process gas supply process (operation S203) and the reactive gas
supply process (operation S205) may be activated using the coil
250a as an activation unit. In particular, as illustrated in each
of the sequence diagrams herein, the reactive gas supplied in the
reactive gas supply process (operation S205) may be activated to
generate active species having different activities at the center
portion of the wafer 200 and cause the reactivity of each of the
process gas and the reactive gas to be different at the center
portion and the peripheral portion of the wafer 200. Accordingly,
the difference between the thicknesses of a film formed on the
center portion and the peripheral portion of the wafer 200 may be
increased. For example, as illustrated in FIG. 11, a film having
the film thickness distribution A of FIG. 5 may be easily formed
when gases are set to be activated only when a first reactive gas
is supplied, and a film having the film thickness distribution B of
FIG. 5 may be easily formed when gases are set to be activated only
when a second reactive gas is supplied,
Second Embodiment
[0128] Although the first embodiment has been described above in
detail, the present invention is not limited thereto and may be
embodied in various forms without departing from the scope of the
invention. For example, an embodiment of FIG. 9 may be
accomplished.
[0129] Referring to FIG. 9, a coil 250a is configured to be
upwardly/downwardly movable. The coil 250a may be moved
upward/downward by moving an elevator 250g upward/downward by
connecting the coil 250a and a matching box 250f to the elevator
250g.
[0130] For example, when the coil 250a is moved upward in a state
in which predetermined conditions of supplying a first reactive gas
and a second reactive gas are set, the efficiency of processing the
center portion of the wafer 200 is greater than the efficiency of
processing the peripheral portion of the wafer 200 and thus the
thickness of the film on the center portion of the wafer 200
increases, thereby forming a film having the film thickness
distribution A of FIG. 5. When the coil 250a is moved downward, the
efficiency of processing the peripheral portion of the wafer 200
increases to increase the thickness of a film formed on the
peripheral portion of the wafer 200, thereby forming a film having
the film thickness distribution B of FIG. 5. As described above, a
film thickness distribution may be controlled by changing the
location of the coil 250a.
[0131] Although one coil is installed and moved here, the present
invention is not limited thereto and a plurality of coils may be
installed in a direction perpendicular to the wafer 200 and
selectively used to control a film thickness distribution.
Otherwise, a combination of the gas supply sequences described
above may be used to control the thickness of a film at the center
portion and the peripheral portion of the wafer 200.
Third Embodiment
[0132] Although the second embodiment has been described above in
detail, the present invention is not limited thereto and may be
embodied in various forms without departing from the scope of the
invention.
[0133] The inventors of the present invention have found that since
plasma was concentrated near an outer circumference of the
processing chamber 201 (the coil 250a) in a plasma device using a
coil as described above, the peripheral portion of the wafer 200
was easily processed to cause a film to be thickly formed on the
peripheral portion compared to the center portion of the wafer 200,
and the quality of the film was likely to be changed to make it
difficult to control the center portion of the wafer 200. The
quality of the film may be determined by, for example,
permittivity, resistivity, etc. Thus, the inventors have conducted
a study and found that a center portion of a substrate can be
easily controlled by adjusting a distribution of plasma using a
structure as illustrated in FIG. 10 or 11.
[0134] Referring to FIGS. 10 and 11, a plasma adjusting electrode
250h is installed to control a distribution of plasma. The plasma
adjusting electrode 250h is configured to be upwardly/downwardly
movable by an elevator 250m including a motor 250i and a pillar
250j. For example, as illustrated in FIGS. 10 and 11, the plasma
adjusting electrode 250h is connected to a coil 250a through a
switch 250k and an electric potential adjustment condenser
250L.
[0135] When the switch 250k is `on`, a capacitive coupling occurs
among the plasma adjusting electrode 250h and the plasma and the
coil 250a to induce plasma generated near the coil 250a to the
plasma adjusting electrode 250h. Thus, plasma may be generated to
the top of the center portion of the wafer 200, thereby improving
the activity of the center portion of the wafer 200. Also, the
electric potential adjustment condenser 250L may be controlled to
control a state of the plasma induced to the plasma adjusting
electrode 250h. Furthermore, the plasma-induced state may be
controlled by operating the elevator 250m to move the plasma
adjusting electrode 250h in an upward/downward direction.
[0136] For example, as illustrated in FIG. 10, when the plasma
adjusting electrode 250h is moved downward to the processing
chamber 201, plasma may be induced near the top of the center
portion of the wafer 200 to increase the density of the plasma on
the center portion of the wafer 200. In this case, a film having
the film thickness distribution A of FIG. 5 may be easily formed.
Also, as illustrated in FIG. 11, when the plasma adjusting
electrode 250h is moved upward, plasma may be concentrated near the
coil 250a to reduce the concentration of the plasma on the center
portion of the wafer 200. It this state, a film having the film
thickness distribution B of FIG. 5 may be easily formed.
[0137] Also, for example, plasma may be induced to the center
portion of the wafer 200 by reducing an impedance between the
plasma adjusting electrode 250h and the coil 250a by controlling
the electric potential adjustment condenser 250L, and may be
concentrated on the peripheral portion of the wafer 200 by
increasing the impedance between the plasma adjusting electrode
250h and the coil 250a. Thus, a film having the film thickness
distribution A or B of FIG. 5 may be formed.
[0138] Also, a film thickness distribution may be finely controlled
by adjusting each of the heights of the switch 250k, the electric
potential adjustment condenser 250L and the plasma adjusting
electrode 250h.
[0139] Also, when the plasma adjusting electrode 250h is installed
outside the process container 202, a plasma generation region may
be controlled without influencing the flow of a gas in the process
container 202.
[0140] Also, the plasma adjusting electrode 250h may be used to
control a distribution of radicals or ions of a reactive gas that
are in various energy states in the processing chamber 201.
[0141] Although various embodiments of the present invention have
been described above, the present invention is not limited thereto
and may be embodied in various forms without departing from the
scope of the invention.
[0142] Although a process of manufacturing a semiconductor device
has been described above, embodiments of the present invention are
not limited thereto. For example, the present invention is
applicable to a process of manufacturing a liquid crystal device, a
plasma treatment to be performed on a ceramic substrate, etc.
[0143] Although a method of forming a film by alternately supplying
a process gas and a reactive gas has been described above, the
present invention is not limited thereto. For example, the process
gas and the reactive gas may be supplied such that pulse timings
thereof overlap.
[0144] Also, the process gas and the reactive gas may be
continuously supplied to form a film by CVD.
[0145] Although a process of forming a film has been described
above, the present invention is not limited thereto. For example,
the present invention is applicable to a substrate processing
process in which a film formed on a surface of or on a substrate
using one or both of a source gas and a reactive gas is
plasma-oxidized or plasma-nitridated. Also, the present invention
is applicable to a substrate processing process in which a thermal
treatment using a gaseous reaction or plasma annealing is performed
using one or both of the source gas and the reactive gas. In
particular, when a plasma treatment is performed at low
temperatures, the center portion and the peripheral portion of the
wafer 200 may be differently processed.
[0146] Also, although a method of differently processing the center
portion and the peripheral portion of the wafer 200 to be
nonuniform has been described above, the present invention is not
limited thereto and a supply rate of gases may be controlled to
uniformly process the center portion and the peripheral portion of
the wafer 200.
[0147] Although a process of forming a film on the center portion
and the peripheral portion of the wafer 200 to different
thicknesses has been described above, the present invention is not
limited thereto. For example, a two-step process may be set such
that a film having a uniform thickness is formed in a first step
and a film is formed on the center portion and the peripheral
portion of the wafer 200 in different thicknesses or qualities in a
second step.
[0148] For example, as illustrated in FIG. 12, a film may be formed
by performing a first step including a first cycle to an n.sup.th
cycle and a second step including an (n+1).sup.th cycle to an
m.sup.th cycle, thereby forming the film having thick peripheral
portions as illustrated in FIG. 14B.
[0149] Also, for example, as illustrated in FIG. 13, in the
apparatus of FIG. 10 or 11, a film as illustrated in FIG. 14A may
be formed by setting the distance between the plasma adjusting
electrode 250h and the wafer 200 to be different in a first step
(including a first cycle to an n.sup.th cycle) and a second step
(including an (n+1).sup.th cycle to an m.sup.th cycle) so that the
distance may be shorter in the second step than in the first
step.
[0150] In FIGS. 14A and 14B, a film 200a is formed in the first
step and films 200b and 200c are formed in the second step.
[0151] Although a gas supply method or the distance between the
plasma adjusting electrode 250h and the wafer 200 is set to be
different in the first step and the second step, the present
invention is not limited thereto and the gas supply method may be
set to be different in arbitrary cycles. For example, a gas supply
method or the distance between the plasma adjusting electrode 250h
and the wafer 200 may be set to be different in odd-numbered cycles
and even-numbered cycles.
[0152] Although the plasma adjusting electrode 250a has a
hemispherical shape in the previous embodiments, the plasma
adjusting electrode 250a may have a plate shape and an upper
portion of the process container 202 may also have a flat
shape.
[0153] Also, a combination of at least two patterns among the gas
supply patterns described above with reference to FIGS. 4, 6 to 8,
12, and 13 may be used in every cycle. By combining the gas supply
patterns, a film thickness/quality distribution of a film to be
formed on the wafer 200 may be tuned in a direction of a plane or
the quality of the film may be controlled in a direction of the
thickness of the film.
[0154] Also, although a method of controlling the amount (the flow
rate or supply duration) of the reactive gas has been described in
the previous embodiments, the amount of the process gas may be
controlled according to the sequence of FIG. 15. Also, the sequence
of FIG. 15 may be combined with the sequence of controlling the
amount of the reactive gas described above. When a film
thickness/quality distribution is controlled by adjusting the
amount of the process gas, the distance between each gas supply
port and the wafer 200 is preferably set to be short.
[0155] Also, although the reactive gas is supplied after the
process gas is supplied in the previous embodiments, the process
gas may be supplied after the reactive gas is supplied.
[0156] In a substrate processing apparatus, a method of
manufacturing a semiconductor device and a non-transitory computer
readable recording medium according to the one or more aspects of
the present invention, a film may be formed on a substrate to have
different film thicknesses and features within a plane of the
substrate and the manufacturing throughput can be improved.
EXEMPLARY EMBODIMENTS OF THE PRESENT INVENTION
[0157] Exemplary embodiments of the present invention will be
supplementarily added below.
Supplementary Note 1
[0158] According to one aspect of the present invention, there is
provided a substrate processing apparatus including: a processing
chamber accommodating a substrate; a first process gas supply unit
configured to supply a first process gas from above the substrate;
a first reactive gas supply unit configured to supply a first
reactive gas from above the substrate; a second process gas supply
unit configured to supply a second process gas from a lateral
direction with respect to the substrate; a second reactive gas
supply unit configured to supply a second reactive gas from the
lateral direction with respect to the substrate; and a control unit
configured to control the first process gas supply unit, the second
process gas supply unit, the first reactive gas supply unit, and
the second reactive gas supply unit to: (a) supply the first
process gas from above the substrate and the second process gas
from the lateral direction with respect to the substrate; and (b)
supply the first reactive gas from above the substrate and the
second reactive gas from the lateral direction with respect to the
substrate, wherein each of the steps (a) and (b) is performed at
least once in a manner that: a total amount of the first process
gas and the second process gas supplied to a center portion of the
substrate is different from that of the first process gas and the
second process gas supplied to a peripheral portion of the
substrate; or a total amount of the first reactive gas and the
second reactive gas supplied to the center portion of the substrate
is different from that of the first reactive gas and the second
reactive gas supplied to the peripheral portion of the substrate in
at least one of the steps (a) and (b).
Supplementary Note 2
[0159] In the substrate processing apparatus of Supplementary note
1, the control unit is preferably configured to control the first
process gas supply unit and the second process gas supply unit such
that the total amount of the first process gas and the second
process gas supplied to the center portion of the substrate is
greater than that of the first process gas and the second process
gas supplied to the peripheral portion of the substrate in the step
(b).
Supplementary Note 3
[0160] In the substrate processing apparatus of Supplementary note
1 or 2, the control unit is preferably configured to control the
first reactive gas supply unit and the second reactive gas supply
unit such that the total amount of the first reactive gas and the
second reactive gas supplied to the center portion of the substrate
is greater than that of the first reactive gas and the second
reactive gas supplied to the peripheral portion of the substrate in
the step (b).
Supplementary Note 4
[0161] In the substrate processing apparatus of Supplementary note
1, the control unit is preferably configured to control the first
process gas supply unit and the second process gas supply unit such
that the total amount of the first process gas and the second
process gas supplied to the center portion of the substrate is less
than that of the first process gas and the second process gas
supplied to the peripheral portion of the substrate in the step
(b).
Supplementary Note 5
[0162] In the substrate processing apparatus of Supplementary note
1, 2, or 4, the control unit is preferably configured to control
the first reactive gas supply unit and the second reactive gas
supply unit such that the total amount of the first reactive gas
and the second reactive gas supplied to the center portion of the
substrate is less than that of the first reactive gas and the
second reactive gas supplied to the peripheral portion of the
substrate in the step (b).
Supplementary Note 6
[0163] The substrate processing apparatus of any one of
Supplementary notes 1 to 5, preferably further including a
substrate support unit configured to support the substrate, and
wherein the control unit is preferably configured to control the
substrate support unit to be moved upward or downward, such that
one of the total amounts of the first process gas and the second
process gas supplied to the center portion and the peripheral
portion of the substrate and the total amounts of the first
reactive gas and the second reactive gas supplied to the center
portion and the peripheral portion of the substrate is different
from the other.
Supplementary Note 7
[0164] The substrate processing apparatus of any one of
Supplementary notes 1 to 6, preferably further including an
activation unit configured to excite the first reactive gas and the
second reactive gas.
Supplementary Note 8
[0165] According to another aspect of the present invention, there
is provided a substrate processing apparatus including: a
processing chamber accommodating a substrate; a first process gas
supply unit configured to supply a first process gas from above the
substrate; a first reactive gas supply unit configured to supply a
first reactive gas from above the substrate; a second process gas
supply unit configured to supply a second process gas from a
lateral direction with respect to the substrate; a second reactive
gas supply unit configured to supply a second reactive gas from the
lateral direction with respect to the substrate; and a control unit
configured to control the first process gas supply unit, the second
process gas supply unit, the first reactive gas supply unit, and
the second reactive gas supply unit to alternately supply the first
process gas, the second process gas, the first reactive gas, and
the second reactive gas by setting at least one among an amount of
the first process gas, an amount of the second process gas, an
amount of the first reactive gas, and an amount of the second
reactive gas to be different from the other.
Supplementary Note 9
[0166] In the substrate processing apparatus of Supplementary note
8, the control unit is preferably configured to control the first
process gas supply unit and the second process gas supply unit such
that an effect of supplying the first process gas is greater than
an effect of supplying the second process gas.
Supplementary Note 10
[0167] In the substrate processing apparatus of Supplementary note
9, the control unit is preferably configured to control the first
process gas supply unit and the second process gas supply unit such
that an effect of supplying the first process gas is greater than
an effect of supplying the second process gas and the amount of the
first process gas is greater than the amount of the second process
gas.
Supplementary Note 11
[0168] In the substrate processing apparatus of Supplementary note
8, the control unit is preferably configured to control the first
reactive gas supply unit and the second reactive gas supply unit
such that an effect of supplying the first reactive gas
contributing to improving a film thickness distribution or a film
quality distribution of a film to be formed on the substrate is
greater than an effect of supplying the second reactive gas.
Supplementary Note 12
[0169] In the substrate processing apparatus of Supplementary note
11, the control unit is preferably configured to control the first
reactive gas supply unit and the second reactive gas supply unit
such that the amount of the first reactive gas is greater than the
amount of the second reactive gas to cause the effect of supplying
the first reactive gas to be greater than the effect of supplying
the second reactive gas.
Supplementary Note 13
[0170] In the substrate processing apparatus of Supplementary note
8, the control unit is preferably configured to control the first
process gas supply unit and the second process gas supply unit such
that an effect of supplying the first process gas contributing to
improving a film thickness distribution or a film quality
distribution of a film to be formed on the substrate is greater
than an effect of supplying the second process gas.
Supplementary Note 14
[0171] In the substrate processing apparatus of Supplementary note
13, the control unit is preferably configured to control the first
process gas supply unit and the second process gas supply unit such
that the amount of the first process gas is less than the amount of
the second process gas to cause the effect of supplying the first
process gas to be lower than the effect of supplying the second
process gas.
Supplementary Note 15
[0172] In the substrate processing apparatus of Supplementary note
8, the control unit is preferably configured to control the first
reactive gas supply unit and the second reactive gas supply unit
such that an effect of supplying the first reactive gas
contributing to improving a film thickness distribution or a film
quality distribution of a film to be formed on the substrate is
less than an effect of supplying the second reactive gas.
Supplementary Note 16
[0173] In the substrate processing apparatus of Supplementary note
15, the control unit is preferably configured to control the first
reactive gas supply unit and the second reactive gas supply unit
such that the amount of the first reactive gas is less than the
amount of the second reactive gas to cause the effect of supplying
the first reactive gas to be lower than the effect of supplying the
second reactive gas.
Supplementary Note 17
[0174] In the substrate processing apparatus of any one of
Supplementary notes 1 to 16, the control unit is preferably
configured to control the first reactive gas supply unit and the
second reactive gas supply unit to supply the second reactive gas
after the first reactive gas is supplied.
Supplementary Note 18
[0175] In the substrate processing apparatus of any one of
Supplementary notes 1 to 17, the control unit is preferably
configured to control the first reactive gas supply unit and the
second reactive gas supply unit to supply the first reactive gas
after the supply of the second reactive gas is stopped.
Supplementary Note 19
[0176] The substrate processing apparatus of any one of
Supplementary notes 1 to 18, preferably further including a plasma
adjusting electrode configured to move upward and downward above
the processing chamber, and wherein the control unit is preferably
configured to control the plasma adjusting electrode to move upward
or downward.
Supplementary Note 20
[0177] According to another aspect of the present invention, there
is provided a method of manufacturing a semiconductor device, the
method including: (a) supplying a first process gas from above a
substrate and a second process gas from a lateral direction with
respect to the substrate; and (b) supplying a first reactive gas
from above the substrate and a second reactive gas from the lateral
direction with respect to the substrate, wherein each of the steps
(a) and (b) is performed at least once in a manner that a total
amount of the first process gas and the second process gas supplied
to a center portion of the substrate is different from that of the
first process gas and the second process gas supplied to a
peripheral portion of the substrate; or a total amount of the first
reactive gas and the second reactive gas supplied to the center
portion of the substrate is different from that of the first
reactive gas and the second reactive gas supplied to the peripheral
portion of the substrate in at least one of the steps (a) and
(b).
Supplementary Note 21
[0178] In the method of Supplementary note 20, in the step (a), the
total amount of the first process gas and the second process gas
supplied to the center portion of the substrate is preferably
greater than that of the first process gas and the second process
gas supplied to the peripheral portion of the substrate.
Supplementary Note 22
[0179] In the method of Supplementary note 20 or 21, in the step
(b), the total amount of the first reactive gas and the second
reactive gas supplied to the center portion of the substrate is
preferably greater than that of the first reactive gas and the
second reactive gas supplied to the peripheral portion of the
substrate.
Supplementary Note 23
[0180] In the method of Supplementary note 20, in the step (a), the
total amount of the first process gas and the second process gas
supplied to the center portion of the substrate is preferably less
than that of the first process gas and the second process gas
supplied to the peripheral portion of the substrate.
Supplementary Note 24
[0181] In the method of Supplementary note 20, 21, or 23, in the
step (b), the total amount of the first reactive gas and the second
reactive gas supplied to the center portion of the substrate is
preferably less than that of the first reactive gas and the second
reactive gas supplied to the peripheral portion of the
substrate.
Supplementary Note 25
[0182] The method of any one of Supplementary notes 20 to 24,
preferably further including moving the substrate upward or
downward before the step (a) or (b).
Supplementary Note 26
[0183] The method of any one of Supplementary notes 20 to 25,
preferably further including activating the first reactive gas and
the second reactive gas.
Supplementary Note 27
[0184] According to another aspect of the present invention, there
is provided a method of manufacturing a semiconductor device, the
method including: (a) supplying a first process gas from above a
substrate and supplying a second process gas from a lateral
direction with respect to the substrate such that an amount of the
supplied second process gas is different from an amount of the
supplied first process gas; (b) supplying a first reactive gas from
above the substrate and supplying a second reactive gas from the
lateral direction with respect to the substrate such that an amount
of the supplied second reactive gas is different from an amount of
the supplied first reactive gas; and (c) activating the first
reactive gas and the second reactive gas.
Supplementary Note 28
[0185] In the method of Supplementary note 27, in the step (a), an
effect of supplying the first process gas contributing to improving
a film thickness distribution or a film quality distribution of a
film to be formed on the substrate is preferably greater than an
effect of supplying the second process gas.
Supplementary Note 29
[0186] In the method of Supplementary note 27 or 28, in the step
(b), an effect of supplying the first reactive gas contributing to
improving the film thickness distribution or the film quality
distribution of the film to be formed on the substrate is
preferably greater than an effect of supplying the second reactive
gas.
Supplementary Note 30
[0187] In the method of Supplementary note 27, in the step (a), an
effect of supplying the first process gas contributing to improving
a film thickness distribution or a film quality distribution of a
film to be formed on the substrate is preferably less than an
effect of supplying the second process gas.
Supplementary Note 31
[0188] In the method of Supplementary note 27 or 28, in the step
(b), an effect of supplying the first reactive gas contributing to
improving the film thickness distribution or the film quality
distribution of the film to be formed on the substrate is
preferably less than an effect of supplying the second reactive
gas.
Supplementary Note 32
[0189] In the method of any one of Supplementary notes 27 to 31, in
the step (b), the second reactive gas is preferably supplied after
the first reactive gas is supplied.
Supplementary Note 33
[0190] In the method of any one of Supplementary notes 27 to 31, in
the step (b), the first reactive gas is preferably supplied after
the supply of the second reactive gas is stopped.
Supplementary Note 34
[0191] The method of any one of Supplementary notes 27 to 33,
preferably further including moving a plasma adjusting electrode
installed above the substrate upward or downward before performing
the step (c).
Supplementary Note 35
[0192] In the method of any one of Supplementary notes 27 to 34,
the amount is preferably a gas flow rate.
Supplementary Note 36
[0193] In the method of any one of Supplementary notes 27 to 35,
the amount is preferably a gas supply duration.
Supplementary Note 37
[0194] According to another aspect of the present invention, there
is provided a program causing a computer to perform: (a) supplying
a first process gas from above a substrate and a second process gas
from a lateral direction with respect to the substrate; and (b)
supplying a first reactive gas from above the substrate and a
second reactive gas from the lateral direction with respect to the
substrate, wherein each of the sequences (a) and (b) is performed
at least once in a manner that a total amount of the first process
gas and the second process gas supplied to a center portion of the
substrate is different from that of the first process gas and the
second process gas supplied to a peripheral portion of the
substrate; or a total amount of the first reactive gas and the
second reactive gas supplied to the center portion of the substrate
is different from that of the first reactive gas and the second
reactive gas supplied to the peripheral portion of the substrate in
at least one of the sequences (a) and (b).
Supplementary Note 38
[0195] According to another aspect of the present invention, there
is provided a non-transitory computer readable recording medium
causing a computer to perform: (a) supplying a first process gas
from above a substrate and a second process gas from a lateral
direction with respect to the substrate; and (b) supplying a first
reactive gas from above the substrate and a second reactive gas
from the lateral direction with respect to the substrate, wherein
each of the sequences (a) and (b) is performed at least once in a
manner that a total amount of the first process gas and the second
process gas supplied to a center portion of the substrate is
different from that of the first process gas and the second process
gas supplied to a peripheral portion of the substrate; or a total
amount of the first reactive gas and the second reactive gas
supplied to the center portion of the substrate is different from
that of the first reactive gas and the second reactive gas supplied
to the peripheral portion of the substrate in at least one of the
sequences (a) and (b).
Supplementary Note 39
[0196] In the non-transitory computer readable recording medium of
Supplementary note 38, in the sequence (a), the total amount of the
first process gas and the second process gas supplied to the center
portion of the substrate is preferably greater than that of the
first process gas and the second process gas supplied to the
peripheral portion of the substrate.
Supplementary Note 40
[0197] In the non-transitory computer readable recording medium of
Supplementary note 38 or 39, in the sequence (b), the total amount
of the first reactive gas and the second reactive gas supplied to
the center portion of the substrate is preferably greater than that
of the first reactive gas and the second reactive gas supplied to
the peripheral portion of the substrate in the sequence (b).
Supplementary Note 41
[0198] In the non-transitory computer readable recording medium of
Supplementary note 38, in the sequence (a), the total amount of the
first process gas and the second process gas supplied to the center
portion of the substrate is preferably less than that of the first
process gas and the second process gas supplied to the peripheral
portion of the substrate
Supplementary Note 42
[0199] In the non-transitory computer readable recording medium of
Supplementary note 38 or 41, in the sequence (b), the total amount
of the first reactive gas and the second reactive gas supplied to
the center portion of the substrate is preferably less than that of
the first reactive gas and the second reactive gas supplied to the
peripheral portion of the substrate in the sequence (b).
Supplementary Note 43
[0200] The non-transitory computer readable recording medium of any
one of Supplementary notes 38 to 41, preferably further including
(c) moving the substrate upward or downward before the sequence (a)
or (b).
Supplementary Note 44
[0201] The non-transitory computer readable recording medium of any
one of Supplementary notes 38 to 43, preferably further including
(d) exciting the first reactive gas and the second reactive
gas.
* * * * *