U.S. patent application number 14/509051 was filed with the patent office on 2015-10-22 for plasma device.
The applicant listed for this patent is Creating Nano Technologies, Inc.. Invention is credited to Yi-Ming Hsu, An-Jen Li, Li-Min Wang.
Application Number | 20150303034 14/509051 |
Document ID | / |
Family ID | 54322605 |
Filed Date | 2015-10-22 |
United States Patent
Application |
20150303034 |
Kind Code |
A1 |
Hsu; Yi-Ming ; et
al. |
October 22, 2015 |
PLASMA DEVICE
Abstract
A plasma device including a casing, a first electrode, a second
electrode, a nozzle and a gas ejection port is provided. The casing
has a first chamber. The first electrode is disposed within the
first chamber and has a second chamber. The second electrode
capable of rotating in relative to the casing has a third chamber
connected with the second chamber. The second chamber and the third
chamber are adapted for accommodating plasma formed between the
first electrode and the second electrode. The nozzle and the gas
ejection port are independently disposed at the bottom of the
second electrode respectively, wherein the nozzle is configured to
eject the plasma, and forms an included angle with or is spaced a
distance apart from a rotating axis of the second electrode. The
gas ejection port is configured to eject cold gas.
Inventors: |
Hsu; Yi-Ming; (Tainan City,
TW) ; Wang; Li-Min; (Tainan City, TW) ; Li;
An-Jen; (Tainan City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Creating Nano Technologies, Inc. |
Tainan City |
|
TW |
|
|
Family ID: |
54322605 |
Appl. No.: |
14/509051 |
Filed: |
October 8, 2014 |
Current U.S.
Class: |
313/231.41 |
Current CPC
Class: |
H01J 2237/006 20130101;
H05H 2001/3468 20130101; H01J 37/32055 20130101; H01J 37/32449
20130101; H05H 2001/3463 20130101; H01J 37/32596 20130101; H05H
1/34 20130101 |
International
Class: |
H01J 37/32 20060101
H01J037/32 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 16, 2014 |
TW |
103113891 |
Claims
1. A plasma device, comprising: a first electrode; a second
electrode, disposed corresponding to the first electrode, wherein
the second electrode is capable of rotating in relative to the
first electrode, and a plasma is adapted to be formed between the
first electrode and the second electrode; and a nozzle and a gas
ejection port, independently disposed at the bottom of the second
electrode respectively, wherein the nozzle is configured to eject
the plasma, and forms an included angle with or is spaced a
distance apart from a rotating axis of the second electrode, and
the gas ejection port is configured to eject a cold gas.
2. The plasma device as recited in claim 1, further comprising: a
casing, having a first chamber, the first electrode being disposed
in the first chamber, and the first electrode being a first tubular
electrode, wherein the first tubular electrode has a second
chamber; and the second electrode being a second tubular electrode,
wherein the second tubular electrode has a third chamber connected
with the second chamber, the second chamber and the third chamber
are adapted for accommodating the plasma, and the second electrode
is capable of rotating in relative to the casing.
3. The plasma device as recited in claim 2, further comprising: an
insulating lining, located between the first tubular electrode and
the casing; a first gas channel, formed between the insulating
lining and the first tubular electrode, and adapted for a first gas
to pass through; and a first swirling flow generator, disposed at a
joint between the first tubular electrode and the second tubular
electrode, wherein the first swirling flow generator comprises at
least one first connection port, the at least one first connection
port is configured to guide the first gas into the second chamber
and the third chamber and to generate a swirling flow in the second
and the third chambers, and the swirling flow pushes an arc root
formed within the first tubular electrode and the second tubular
electrode to enable the arc root to perform a spiral motion at
internal surfaces of the first tubular electrode and the second
tubular electrode.
4. The plasma device as recited in claim 3, wherein the first gas
channel further extends to and between the second tubular electrode
and the casing, so as to connect with the gas ejection port.
5. The plasma device as recited in claim 3, further comprising: a
second gas channel, formed between the casing and the insulating
lining, and adapted for a second gas to pass through, wherein the
second gas channel further extends to and between the second
tubular electrode and the casing and is connected with the gas
ejection port.
6. The plasma device as recited in claim 5, wherein the first gas
and the second gas are a same gas, and the plasma device further
comprises: a swirling flow distributor, located in a transmission
path of the first gas and the second gas within the first gas
channel and the second gas channel, for regulating a ratio between
the cold gas ejected from the gas ejection port and the working gas
that enters into the second chamber and the third chamber.
7. The plasma device as recited in claim 3, further comprising: at
least one intake port, disposed on the second tubular electrode and
connected with the gas ejection port; and a gas valve shell,
wherein the at least one intake port is disposed on the second
tubular electrode through the gas valve shell, and a third gas
channel is formed between the at least one intake port and the gas
ejection port.
8. The plasma device as recited in claim 7, further comprising: a
heat dissipation blade unit, disposed on the second tubular
electrode, wherein the cold gas is injected by the heat dissipation
blade unit and then guided into the at least one intake port.
9. The plasma device as recited in claim 3 being adapted to perform
a treatment to an object being treated, wherein the nozzle and the
gas ejection port are different openings at a same side of the
bottom of the second tubular electrode, and the plasma and the cold
gas contact with the outside and mix with each other through the
different openings at the bottom of the second tubular
electrode.
10. The plasma device as recited in claim 3 being adapted to
perform a treatment to an object being treated, wherein the gas
ejection port and the nozzle engage with each other within the
bottom of the second tubular electrode, so as to enable the plasma
and the cold gas to flow together to the nozzle at the bottom of
the second tubular electrode and to be ejected from a same outlet,
and the plasma and the cold gas are guided to a surface of the
object being treated through the same outlet.
11. The plasma device as recited in claim 3, further comprising: a
second swirling flow generator, covering on the first tubular
electrode, and the first tubular electrode being jointed to the
second swirling flow generator, wherein the second swirling flow
generator comprises at least one second connection port configured
to guide the working gas within the first gas channel into the
second chamber via a tangential path.
12. The plasma device as recited in claim 1, wherein the second
electrode is jointed to an external side face at the bottom of the
casing through a shaft bearing, the nozzle is fixed on a rotating
portion of the second electrode, and the rotating portion of the
second electrode and the nozzle rotate around the casing.
13. The plasma device as recited in claim 1, further comprising: a
transmission device, installed on an external side face of the
second electrode, for driving the second electrode and the nozzle
into rotation.
14. A plasma device, comprising: a casing, having a first chamber;
a first tubular electrode, disposed in the first chamber and having
a second chamber; a second tubular electrode, having a third
chamber connected with the second chamber, wherein the second
tubular electrode is capable of rotating in relative to the casing,
and the second chamber and the third chamber are adapted for
accommodating a plasma formed between the first tubular electrode
and the second tubular electrode; and a nozzle and a gas ejection
port, independently disposed at the bottom of the second tubular
electrode respectively, wherein the nozzle is configured to eject
the plasma, and forms an included angle with or is spaced a
distance apart form a rotating axis of the second tubular
electrode, and the gas ejection port is configured to eject a cold
gas.
15. The plasma device as recited in claim 14, further comprising: a
transmission device, installed on an external side face of the
second tubular electrode for driving the second tubular electrode
and the nozzle into rotation.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the priority benefit of Taiwan
application serial no. 103113891, filed on Apr. 16, 2014. The
entirety of the above-mentioned patent application is hereby
incorporated by reference herein and made a part of this
specification.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The invention relates to a plasma device, and more
particularly, to an atmospheric plasma device.
[0004] 2. Description of Related Art
[0005] With the development of plasma technology, atmospheric arc
plasma in the plasma has been widely applied to various fields of
surface treatment. For example, the atmospheric arc plasma may be
used to perform a surface treatment to an object to be treated, so
as to enhance a reliability for performing a process, such as
adhering, printing, packaging or epitaxizing, on a surface of this
object. However, as being restricted by negative resistance
characteristics of an electric arc, a process range of this type of
atmospheric arc plasma is limited, and thus is unable to
simultaneously produce a large area arc discharge. Although a
discharge density of the atmospheric arc plasma is relatively
higher and causes more active substances to be produced by this
plasma technique, so that a speed of the plasma treatment may be
raised (it requires only a short amount of time to complete the
surface treatment for a scanning area), large area arc discharge
characteristic is unable to be produced, and thus the application
of this type of atmospheric arc plasma is still being limited.
[0006] In order to improve the applicability of the atmospheric arc
plasma, U.S. Pat. No. 6,262,386 and TW Patent No. M426456 each
discloses a plasma device, wherein an arc plasma nozzle titles an
angle in relative to an axis of the plasma device, and the nozzle
may rotate circumferentially around the axis so as to increase an
ejection area of the plasma, thereby attaining an effect of large
area surface treatment. However, at the same time of rotating the
nozzle to expand the effective surface area of the plasma
treatment, it is required to supply the plasma device with more
power, so that enough amount of the required plasma may be
produced. However, as high power is being applied, a temperature of
the plasma also rises and thereby influences the performance of the
plasma in performing the surface treatment to the object being
treated, especially for heat sensitive objects, such as flexible
substrate and so forth. Therefore, how to retain the performance of
the plasma treatment while controlling the temperature of a
substrate is one of the issues that have to be conquered in the
field of plasma device. Moreover, in addition to the problem of
unable to effectively lower the temperature of the plasma, a
rod-shaped inner electrode as disclosed by U.S. Pat. No. 6,262,386
is also apt to be damaged due to the plasma being concentrated on a
single point, especially when high power is being applied, and
thereby influences a reliability of the device.
SUMMARY OF THE INVENTION
[0007] The invention is directed to a plasma device capable of
performing a large area surface treatment and having favorable
reliability and performance.
[0008] The plasma device of the invention includes a casing, a
first electrode, a second electrode, a nozzle and a gas ejection
port, wherein shapes of the first electrode and the second
electrode are not limited, and may be tubular, rod-shaped or other
shapes. In the present disclosure, the first electrode and the
second electrode are, for example, depicted as a first tubular
electrode and a second tubular electrode, but the invention is not
limited thereto. The casing has a first chamber. The first tubular
electrode is disposed in the first chamber and has a second
chamber. The second tubular electrode has a third chamber connected
with the second chamber. The second tubular electrode can rotate in
relative to the casing, and the second chamber and the third
chamber are adapted for accommodating a plasma formed between the
first tubular electrode and the second tubular electrode. The
nozzle and the gas ejection port are independently disposed at the
bottom of the second tubular electrode respectively. The nozzle is
configured to eject the plasma and forms an included angle with or
is spaced a distance apart from a rotating axis of the second
tubular electrode, and the gas ejection port is configured to eject
a cold gas.
[0009] In an embodiment of the invention, the plasma device may
further include an insulating lining, a first gas channel and a
first swirling flow generator, wherein the insulating lining is
located between the first tubular electrode and the casing. The
first gas channel is formed between the insulating lining and the
first tubular electrode and is adapted for a first gas to pass
through. The first swirling flow generator is disposed at a joint
between the first tubular electrode and the second tubular
electrode, wherein the first swirling flow generator includes at
least one first connection port configured to guide the first gas
into the second chamber and the third chamber and to generate a
swirling flow within the second and the third chambers, and the
swirling flow pushes an arc root formed within the first tubular
electrode and the second tubular electrode, so as to enable the arc
root to perform a spiral motion on internal surfaces of the first
tubular electrode and the second tubular electrode. More
specifically, the first gas channel may further extend to and
between the second tubular electrode and the casing, so as to be
connected with the gas ejection port.
[0010] In an embodiment of the invention, the plasma device may
also include a second gas channel formed between the casing and the
insulating lining, and is adapted for a second gas to pass through,
wherein the second gas channel further extends to and between the
second tubular electrode and the casing and is connected with the
gas ejection port. Now, the first gas and the second gas may be a
same gas, and the plasma device may further include a swirling flow
distributor located in a transmission path of the first gas and the
second gas within the first gas channel and the second gas channel,
for regulating a ratio between the cold gas ejected from the gas
ejection port and the working gas that enters into the second
chamber and the third chamber.
[0011] In an embodiment of the invention, the nozzle and the gas
ejection port are separately disposed at opposite sides of the
bottom of the second tubular electrode, and when performing a
treatment to an object being treated, the plasma and the cold gas
may respectively be guided to opposite sides of a surface of the
object being treated. In other embodiments, the nozzle and the gas
ejection port may be different openings at a same side of the
bottom of the second tubular electrode. Specifically, the plasma
and the cold gas are guided to the surface of the object being
treated from the different openings at the bottom of the second
tubular electrode, such that the nozzle and the gas ejection port
are openings, with a same radial direction but different radii,
located at the bottom of the second tubular electrode. Certainly,
in other embodiments, the gas ejection port and the nozzle may
firstly be jointed with each other within the bottom of the second
tubular electrode, so as to enable the plasma and the cold gas to
flow together to the nozzle at the bottom of the second tubular
electrode and to be ejected from a same outlet. In this
circumstance, the plasma and the cold gas may be guided from the
same outlet to a same side on the surface of the object being
treated.
[0012] In an embodiment of the invention, the plasma device further
includes at least one intake port. The at least one intake port is
disposed on the second tubular electrode and connected with the gas
ejection port. In this circumstance, the plasma device may further
include a gas valve shell, the at least one intake port is disposed
on the tubular electrode through the gas valve shell, and a third
gas channel is formed between the at least one intake port and the
gas ejection port.
[0013] In an embodiment of the invention, the plasma device further
includes a heat dissipation blade unit. The heat dissipation blade
unit is disposed on the second tubular electrode, wherein the cold
gas is injected by the heat dissipation blade unit and then guided
into the at least one intake port.
[0014] In an embodiment of the invention, the cold gas is an inert
gas. Certainly, the cold gas in other embodiments may also be a gas
capable of reacting with the plasma, and the object being treated
may be performed a coating process or an etching process with an
injection of reactive gas.
[0015] In an embodiment of the invention, a second swirling flow
generator is further provided. The second swirling flow generator
covers on the first tubular electrode, wherein the second swirling
flow generator includes at least one second connection port
configured to guide the working gas within the first gas channel
into the second chamber and the third chamber. Specifically, the
first swirling flow generator or the second swirling flow generator
may enable the working gas to be injected via a tangential path,
and enable the swirling flow to be generated within the second and
the third chambers.
[0016] In an embodiment of the invention, the second tubular
electrode may be jointed to an external side face at the bottom of
the casing through a shaft bearing, nozzle is fixed on a rotating
portion of the second electrode, and the rotating portion of the
second electrode and the nozzle rotate around the casing. In
addition, the plasma device may further include a transmission
device installed on the external side face of the second tubular
electrode, for driving the second electrode and the nozzle into
rotation.
[0017] In an embodiment of the invention, the first tubular
electrode, the second tubular electrode and the nozzle may be
disposed concentrically or nonconcentrically.
[0018] In an embodiment of the invention, the plasma device is
adapted to perform a treatment to an object being treated, wherein
a gas shape of the cold gas ejected on the surface of the object
being treated may be long and narrow or an arc. In addition, when
the cold gas is ejected along a first region on the surface of the
object being treated while the plasma is ejected along a second
region on the surface of the object being treated, the first region
is, for example, treated in a manner of surrounding the second
region.
[0019] In an embodiment of the invention, the plasma device further
includes a non-DC power supply. The non-DC power supply is
electrically connected with the first tubular electrode and the
casing, so as to apply voltage.
[0020] In view of the foregoing, the plasma device of the
invention, by separately disposing an independent gas ejection port
beside the nozzle of the rotatable plasma, in addition to achieving
a high performance of a large area surface treatment effect, may
also timely introduce airflow to cool down the object being
treated, even if it is a heat sensitive object, and may further
effectively lower a surface temperature of the object being
treated, so that the object being treated can undergo a high
performance plasma surface treatment within a short time, thereby
enabling the high performance plasma surface treatment not to be
limited and influenced by the material of the object being
treated.
[0021] To make the aforementioned and other features and advantages
of the invention more comprehensible, several embodiments
accompanied with drawings are described in detail as follows.
BRIEF DESCRIPTION OF THE DRAWINGS
[0022] The accompanying drawings are included to provide a further
understanding of the invention, and are incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments of the invention and, together with the description,
serve to explain the principles of the invention.
[0023] FIG. 1 is a schematic diagram illustrating architecture of a
plasma device according to an embodiment of the invention.
[0024] FIG. 2A is a gas shape schematic diagram illustrating the
plasma of FIG. 1 performing a surface treatment to a fixed point of
a stationary object being treated.
[0025] FIG. 2B is a gas shape schematic diagram illustrating a
plasma performing a surface treatment to a fixed point of a
stationary object being treated according to a comparative example
of the invention.
[0026] FIG. 2C is a schematic diagram illustrating temperature
variation curves of the fixed points shown in FIG. 2A and FIG. 2B
relative to treating time.
[0027] FIG. 2D is a gas shape schematic diagram illustrating the
plasma of FIG. 1 performing a surface treatment to a fixed point of
an object being treated that moves in relative to a scanning
direction.
[0028] FIG. 2E is a gas shape schematic diagram illustrating a
plasma performing a surface treatment to a fixed point of an object
being treated that moves in relative to a scanning direction
according to a comparative example of the invention.
[0029] FIG. 2F is a schematic diagram illustrating temperature
variation curves of the fixed points shown in FIG. 2D and FIG. 2E
relative to performing time.
[0030] FIG. 3A to FIG. 3D are different gas shape schematic
diagrams illustrating the plasma of FIG. 1 performing the surface
treatment.
[0031] FIG. 4 is a schematic diagram illustrating architecture of a
plasma device according to another embodiment of the invention.
[0032] FIG. 5 is a schematic diagram illustrating architecture of a
plasma device according to yet another embodiment of the
invention.
[0033] FIG. 6 is a schematic diagram illustrating architecture of a
plasma device according to still another embodiment of the
invention.
[0034] FIG. 7 is a schematic diagram illustrating architecture of a
plasma device according to further another embodiment of the
invention.
[0035] FIG. 8A is a schematic diagram illustrating architecture of
a plasma device according to an embodiment of the invention.
[0036] FIG. 8B is a front view schematic diagram illustrating a
heat dissipation blade unit shown in FIG. 8A.
DESCRIPTION OF THE EMBODIMENTS
[0037] In view of the foregoing problems, the invention effectively
solves these problems by disposing a gas ejection port nearby a
plasma ejection outlet of a plasma device. Furthermore,
implementations of a first electrode and a second electrode in the
plasma device that are configured for generating the plasma are not
limited to the shapes disclosed in the present embodiment, such
that the first electrode and the second electrode may be tubular,
rod-shaped or other shapes. Except that, when the first electrode
and the second electrode are a tubular first tubular electrode and
a tubular second tubular electrode, damages in the electrodes can
effectively be avoided and reliability of the device may be
enhanced. FIG. 1 is a schematic diagram illustrating architecture
of a plasma device according to an embodiment of the invention.
Referring to FIG. 1, in the present embodiment, a plasma device 100
includes a casing 110, a first tubular electrode 120, a second
tubular electrode 130, a first gas channel GC1, a second gas
channel GC2, a plurality of intake ports IP1, at least one swirling
flow generator 141 and 143, a nozzle 181, and a gas ejection port
190. For example, in the present embodiment, the plasma device 100
is an electric arc atmospheric plasma device 100. The casing 110 is
then, for example, composed of metal or stainless steel or other
proper conductive material. In addition, as shown in FIG. 1, in the
present embodiment, the plasma device 100 includes two swirling
flow generators 141 and 143, but the invention is not limited
thereto. In other embodiments, the plasma device 100 may also only
include a single swirling flow generator.
[0038] Specifically, as shown in FIG. 1, in the present embodiment,
the casing 110 is a tubular structure surroundingly disposed
outside of the first tubular electrode 120, so that a chamber 111
(viz. first chamber) is constituted between the casing 110 and the
first tubular electrode 120. An insulating lining 115 encircling
the first tubular electrode 120 is disposed in the chamber 111, and
a material of the insulating lining 115 may, for example, be
Teflon, polyetheretherketone (PEEK) or ceramic. Moreover, the
chamber 111 outside of the insulating lining 115 may be used as a
gas channel. In more detail, an upper bottom 113 of the casing 110
is jointed to the base of the chamber 111. As shown in FIG. 1, the
casing 110 of the present embodiment further include an airflow
shroud 116 extending downwardly from the upper bottom 113, and the
upper bottom 113 is a portion whereby the casing 110 starts to
shrink, such that an internal diameter of the casing 110 gradually
decreases from the upper bottom 113 to a lower bottom 114, thereby
causing the airflow shroud 116 of the casing 110 to form a chamber
142 having a funnel-like shape between the upper bottom 113 and the
lower bottom 114. Besides, in the present embodiment, the casing
110 is an overall casing.
[0039] On the other hand, the first tubular electrode 120 is
disposed in the chamber 111 of the casing 110, and the first
tubular electrode 120 is a hollow tubular structure having a
chamber 121 (viz., second chamber). In the present embodiment, the
second tubular electrode 130, as well as due to having a hollow
tubular structure, also having a chamber 131 (viz., third chamber),
and this chamber 131 is connected with the chamber 121 of the first
tubular electrode 120, wherein a space constituted thereby is used
to accommodate an arc root AR and a plasma AC formed when the
plasma device is activated.
[0040] In the present embodiment, the plasma device 100 has two gas
channels surroundingly disposed outside of the first tubular
electrode 120 respectively; as shown in FIG. 1, from the inside to
the outside, which respectively are a first gas channel GC1 /formed
between the first tubular electrode 120 and the insulating lining
115 and a second gas channel GC2 formed between the insulating
lining 115 and the casing 110. The first gas channel GC 1 and the
second gas channel GC2 communicated with external gas sources
respectively through the intake ports IP 1, wherein the intake
ports IP 1 are disposed above the casing 110. In addition, in the
present embodiment, the first gas channel GC1 and the second gas
channel GC2 may further extend to and between the second tubular
electrode 130 and the casing 110, so as to be connected with the
gas ejection port 190.
[0041] Specifically, the first gas channel GC 1 and the second gas
channel GC2 are respectively adapted for a first gas WG and a
second gas CG to pass through, and proper types of gases may be
injected thereinto based on the process needs, wherein the gases
injected into the two gas channels may be the same or different.
Taking the embodiment shown in FIG. 1 for an example, the first gas
WG may be injected from the first gas channel GC1 through the
connection port CP2 and then into the chamber 121 and the chamber
131, and when voltage is applied between the first tubular
electrode 120 and the second tubular electrode 130, the first gas
WG may be used as a working gas for activating the arc root AR and
the plasma AC. On the other hand, the second gas CG may be injected
into the second gas channel GC2, and the second gas CG passes
through the funnel-shaped chamber 142 and is ejected from the
bottom of the second tubular electrode through the gas ejection
port 190, such that cold gas is ejected to the object being treated
so as to cool down the temperature of a high performance plasma
treatment. In the present embodiment, a portion of the first gas WG
that is used as the working gas may also be guided to the gas
ejection port 190 and be used as the cold gas, wherein the types of
the first gas WG and the second gas CG may be the same, or
different, based on the process needs. Certainly, the first gas WG
and the second gas CG may also each operate independently, and the
invention is not limited thereto.
[0042] For example, as shown in FIG. 1, since the first gas channel
GC 1 is connected with the gas ejection port 190 through the
funnel-shaped chamber 142 at nearby the connection port CP2, and
the second gas channel GC2 is connected with the gas ejection port
190 through the funnel-shaped chamber 142 shown in the right side
of FIG. 1, the second gas CG of the present embodiment may be
guided into the first gas channel GC 1 and its connected gas
ejection port 190 through the second gas channel GC2. In addition,
the gas ejection port 190 and the nozzle 181 of the present
embodiment are independently disposed at opposite sides of the
bottom of the second tubular electrode 130, wherein the nozzle 181
is configured to eject the plasma AC, and the gas ejection port 190
is configured to eject the second gas CG. As such, in an operating
mode, the plasma AC and the second gas CG may respectively be
guided to opposite sides at the surface of the object being treated
OB, so that the plasma AC may perform required surface treatments,
such as cleaning, coating, etching, or activating passivating
surface energy, to the object being treated OB.
[0043] Moreover, in the present embodiment, when the second gas CG
and the first gas WG are a same gas, the plasma device 100 may
additionally be disposed with a swirling flow distributor (not
shown) in a transmission path of the second gas CG and the first
gas WG within the first gas channel GC1 and the second gas channel
GC2, so as to regulate a ratio between the second gas CG, which is
ejected from the gas ejection port as the cold gas, and the first
gas WG, which enters into the second chamber 121 and the third
chamber 131 as a working gas. For instance, the swirling flow
distributor regulates the ratio between the second gas CG and the
first gas WG by means of controlling the relative amounts of the
second gas CG and the first gas WG based on aperture sizes thereof.
As such, the exiting types of gases may be used while taking into
account of the performance of the plasma treatment to the object
being treated, and the second gas CG may be used to attain an
effect of cooling the surface of the object being treated.
[0044] On the other hand, in the present embodiment, since the
first gas WG may flow within the first gas channel GC1 and may flow
towards the funnel-shaped chamber 142 surroundingly disposed
outside of the second tubular electrode 130, the injection and the
flowing of the first gas WG may also be used to cool down the
operating first tubular electrode 120 and the second tubular
electrode 130, thereby providing an air cooling effect; certainly,
the second gas CG that flows to the chamber 142 may also provide an
air cooling effect. In short, by using the air cooling effects
provided by the first gas WG and the second gas CG, working
temperatures of the first tubular electrode 120 and the second
tubular electrode 130 may be effectively lowered without requiring
an additional cooling system, and thus the resulting plasma AC may
be more stable and retained in a high-energy state, thereby
enhancing the performance and the stability in treating the object
being treated OB and effectively prolonging the service lives of
the first tubular electrode 120 and the second tubular electrode
130.
[0045] The swirling flow generator 143 of the present embodiment is
fixed on a bottom surface S111 of the chamber 111 of the casing
110, and the swirling flow generator 143 is located at a gap at a
joint between the first tubular electrode 120 and the second
tubular electrode 130, so that the working gas passing through the
first gas channel GC1 may be injected into the chamber 121 and the
chamber 131 by the swirling flow generator 143 through the
connection port CP2 in a manner of swirling flow, so as to provide
the gas that forms the arc root AR and the plasma AC. As shown in
FIG. 1, the other swirling flow generator 141 is disposed above the
first tubular electrode 120; and in the present embodiment, an
intake ports or a connection port (ex. CP1) may also be disposed
above the first tubular electrode 120 and nearby the swirling flow
generator 141. During a period of forming the arc plasma, it is
conducive to stabilize the electric arc and the plasma in moving
towards the nozzle by injecting gas through the intake ports or
this intake ports connection port CP 1, and thus may effectively
prevent the arc plasma from being accumulated above the first
tubular electrode 120 when the size of the first tubular electrode
120 is required to be further reduced. 100431 On the other hand, as
shown in FIG. 1, in the present embodiment, the plasma device 100
may further include a non-DC power supply, such as a non-DC power
supply 170. The non-DC power supply 170 is electrically connected
with the first tubular electrode 120, in which the first tubular
electrode 120 is a high voltage terminal and the second tubular
electrode is a ground terminal or a relative low voltage terminal,
so that a voltage difference may be formed between the first
tubular electrode 120 and the second tubular electrode 130, and
thereby activating the arc root AR and generating the plasma AC.
Moreover, in the present embodiment, since the first tubular
electrode 120 is jointed on the swirling flow generator 143, in
order to electrically insulate the swirling flow generator 143 from
the casing 110, the swirling flow generator 143 may be composed of
metal and insulating material, or be constituted by simply the
insulating material, wherein the insulating material that
constitutes the swirling flow generator 143 may be PEEK. On the
other hand, the swirling flow generator 141 may also be constituted
by metal and insulating material, but the material of the swirling
flow generator 141 is preferably metal.
[0046] In more detail, the first gas WG, after entering the chamber
121 from the swirling flow generator 143 as the swirling flow,
flows upwards and downwards respectively along an inner side face
of the first tubular electrode 120 at the top, an inner side face
of the upper bottom 113 of the casing 110 at the bottom and an
inner side face of the second tubular electrode 130, and forms the
swirling flow AF. Now, the first tubular electrode 120 and the
second tubular electrode 130, as being applied with voltage,
generate the arc root AR. The arc root AR may ionize the swirling
flow AF, so that the first gas WG produces an activation reaction
and thereby forming the plasma AC in the chamber 121 and the
chamber 131.
[0047] Furthermore, in the present embodiment, the swirling flow AF
formed by the first gas WG pushes the arc root AR formed within the
first tubular electrode 120 and the second tubular electrode 130,
so that the arc root AR performs a spiral motion around the chamber
121 of the first tubular electrode 120 and the chamber 131 of the
second tubular electrode 130. Then, the plasma AC transformed from
the first gas WG is ejected out of the nozzle after being guided
from within the plasma device 100 to the nozzle 181, so as to
perform a plasma treatment to the object being treated OB.
[0048] As shown in FIG. 1, the second tubular electrode 130, for
example, is jointed to an external side face of the upper bottom
113 of the casing 110 through a shaft bearing 150. In the present
embodiment, since a material of the shaft bearing 150 may be metal,
voltage potentials of the second tubular electrode 130 and the
nozzle 181 may be transmitted to the casing 110 through the shaft
bearing 150. Furthermore, in the present embodiment, the nozzle 181
is disposed on a rotating portion RP at the bottom of the second
tubular electrode 130 by means of non-shaft bearing, namely, the
nozzle 181 may rotate in relative to the casing via the rotating
portion RP (connected with the nozzle 181) of the second tubular
electrode 130. As such, an ejection area of the gas ejected from
the nozzle 181 is increased, thereby achieving an effect of large
area surface treatment.
[0049] Moreover, in the present embodiment, the nozzle 181 is
spaces a distance apart from a rotating axis 0 of the second
tubular electrode 130. Furthermore, in the present embodiment, the
nozzle 181 is also disposed underneath the second tubular electrode
130 by means of tilting, and thus an opening DO under the nozzle
181 has an included angle .theta. with the rotating axis 0 of the
second tubular electrode 130. In same examples, the included angle
.theta. is greater than 0 degree but less than 90 degrees. For
example, the first tubular electrode 120, the second tubular
electrode 130 and the nozzle 181 may be concentric. Namely, an axis
connecting with the second tubular electrode 130 and an opening UO
above the nozzle 181 may align with the first tubular electrode 120
and the axis of the second tubular electrode 130, but the invention
is not limited thereto. In another embodiment, the first tubular
electrode 120, the second tubular electrode 130 and the nozzle 181
may also be nonconcentric. For example, axes of the first tubular
electrode 120 and the second tubular electrode 130 may be
different, but may be the same as the axis of the opening UO above
the nozzle 181; or, the axis of the opening UO above the nozzle 181
is different from the axes of the second tubular electrode 130 and
the first tubular electrode 120; or, the axes of the first tubular
electrode 120, the second tubular electrode 130 and the opening UO
above the nozzle 181 are all different.
[0050] Besides, the plasma device 100 may also selectively include
a transmission device 160 according to practical application
requirements, wherein the transmission device 160 may, for example,
be a belt ring, a gear or so forth. In more detail, as shown in
FIG. 1, the transmission device 160 is disposed on an external side
face of the second tubular electrode 130 nearby the shaft bearing
150, so as to drive the second tubular electrode 130, the nozzle
181 and the gas ejection port 190 to rotate circumferentially in
relative to the casing 110, but the invention is not limited
thereto. The transmission means may also be driving a transmission
member by using a transmission device, such as a motor, and then
using the transmission member to drive the transmission device 160
jointed therewith, and thereby drives the second tubular electrode
130, the nozzle 181 and the gas ejection port 190 into rotation.
Certainly, the transmission device 160 may also use a magnetic
drive member (not shown) to drive the second tubular electrode 130,
the nozzle 181 and the gas ejection port 190 to rotate
circumferentially in relative to the casing 110, but the invention
is not limited thereto.
[0051] As a result, the plasma AC and the second gas CG, when being
respectively guided to the nozzle 181 and the gas ejection port
190, may further be guided to the surface of the object being
treated OB via the nozzle 181 and the gas ejection port 190, so as
to perform the plasma treatment to the object being treated OB, and
the second gas
[0052] CG may be used to attain an effect of cooling the surface of
the object being treated OB. Further details, accompanied by FIG.
2A to FIG. 3D, regarding the implementation of possible gas shapes
of the plasma AC and the second gas CG as they are being guided to
the surface of the object being treated OB are provided in the
following.
[0053] FIG. 2A is a gas shape schematic diagram illustrating the
plasma of FIG. 1 performing a surface treatment to a fixed point of
a stationary object being treated. FIG. 2B is a gas shape schematic
diagram illustrating a plasma performing a surface treatment to a
fixed point of a stationary object being treated according to a
comparative example of the invention. FIG. 2C is a schematic
diagram illustrating temperature variation curves of the fixed
points shown in FIG. 2A and FIG. 2B. Referring to FIG. 2A relative
to treating time, in the present embodiment, the plasma AC and the
second gas CG may respectively be guided onto surfaces at opposite
sides of the surface of the object being treated OB, and
respectively perform the plasma treatment to the object being
treated OB and provide the air cooling effect. In more detail, as
shown in FIG.
[0054] 2A, after the plasma AC performs the treatment to a fixed
point A of the surface of the object being treated OB, as the
nozzle 181 and the gas ejection port 190 rotate periodically, the
second gas CG may also provide the air cooling effect after being
guided to the fixed point A of the surface of the object being
treated OB, thereby effectively lowering the temperature at the
fixed point A of the surface of the object being treated OB.
[0055] On the other hand, as shown in FIG. 2B, when the plasma
device 100 only provides the plasma treatment but not the second
gas CG, the temperature at the fixed point A of the surface of the
object being treated OB gradually rises as treatment time grows. As
such, the temperature at the surface of the object being treated OB
would rise improperly, and even cause damages to the object being
treated OB, more particularly, to an object being treated OB having
heat sensitive nature. In addition, improper rise of the
temperature would also influence the performance of the surface
treatment to the object being treated OB.
[0056] Furthermore, as shown in FIG. 2C, the temperature at the
fixed point A when the plasma device 100 simultaneously provides
the plasma AC and the second gas CG for performing the surface
treatment is significantly smaller than the temperature at the
fixed point A when the plasma device 100 only provides the plasma
AC for performing the surface treatment; and as the number of
contacts increases, the difference becomes more obvious. It can be
known from FIG. 2C, the plasma device 100 of the invention, as
being disposed with the gas ejection port, may avoid a risk of
influencing the performance of the plasma AC in performing the
surface treatment due to the temperature of the plasma AC being too
high.
[0057] On the other hand, in the previous embodiment, even though
the stationary object being treated OB has been taken as an example
for description; the invention is not limited thereto. Further
descriptions, accompanied by FIG. 2D to FIG. 2F, are provided below
with details.
[0058] FIG. 2D is a gas shape schematic diagram illustrating the
plasma of FIG. 1 performing a surface treatment to a fixed point of
an object being treated that moves in relative to a scanning
direction. FIG. 2E is a gas shape schematic diagram illustrating a
plasma performing a surface treatment to a fixed point of an object
being treated that moves in relative to a scanning direction
according to a comparative example of the invention. FIG. 2F is a
schematic diagram illustrating temperature variation curves of the
fixed points shown in FIG. 2D and FIG. 2E. Referring to FIG. 2D and
FIG. 2E, in the present embodiment, the plasma device 100, when
performing the surface treatment to the object being treated OB,
may enable the object being treated OB to perform a relative
movement along a scanning direction, thereby attaining the effect
of large area surface treatment. In more detail, as shown in FIG.
2D, in an embodiment, the plasma device 100 simultaneously provides
the plasma AC and the second gas CG to respectively perform the
plasma treatments to the object being treated so as to provide the
air cooling effect, and thereby effectively lower a temperature at
a fixed point B of the surface of the object being treated OB.
[0059] On the other hand, as shown in FIG. 2E, in a comparative
example, the plasma device 100 only provides the plasma treatment
but not the second gas CG, and thus a temperature at the fixed
point B of the surface of the object being treated OB gradually
rises as the treatment time grows. Hence, as shown in FIG. 2F, the
temperature at the fixed point B when the plasma device 100
simultaneously provides the plasma AC and the second gas CG for
performing the surface treatment is significantly smaller than the
temperature at the fixed point B when the plasma device 100 only
provides the plasma AC for performing the surface treatment; and as
the number of contacts increases, the difference becomes more
obvious. Accordingly, the plasma device 100 may rotate periodically
via the nozzle 181 and the gas ejection port 190, so that the
second gas CG may also be guided to the fixed point B of the
surface of the object being treated OB to provide the air cooling
effect later, and thereby avoid a risk of influencing the
performance of the plasma AC in performing the surface treatment
due to the temperature of the plasma AC being too high.
[0060] Besides, in the previous embodiment, even though the gas
shape of the second gas CG has taken a dotted shape as an example
for description, the invention is not limited thereto. Further
descriptions, accompanied by FIG. 3A to FIG. 3D, are provided below
with details.
[0061] FIG. 3A to FIG. 3D are different gas shape schematic
diagrams illustrating the plasma of FIG. 1 performing the surface
treatment. As shown in FIG. 3A and FIG. 3B, in the present
embodiment, the gas ejection port 190 may also control the gas
shape of the second gas CG ejected at the surface of the object
being treated OB to be long and narrow, or the gas shape of the
second gas CG ejected at the surface of the object being treated OB
to be an arc. In addition, as shown in FIG. 3C, in another
embodiment, an amount of the gas ejection port 190 configured to
eject the second gas CG is a plurality. Hence, a range of the
second gas CG in performing the air cooling effect may further be
expanded.
[0062] Moreover, the invention also does not limit the range of the
second gas CG performing in the air cooling effect must be
overlapped with a range of the plasma AC in performing the surface
treatment. For example, as shown in FIG. 3D, in an embodiment, the
second gas CG may be ejected along a first region AR1 on the
surface of the object being treated OB, the plasma AC may be
ejected along a second region AR2 on the surface of the object
being treated OB, and the first region AR1 is adjacent to the
second region AR2. Hence, the first region AR1 that provides the
air cooling effect by using the second gas CG is adjacent to the
second region AR2 that is performed with the surface treatment by
the plasma AC, the plasma device 100 may also attain an effect of
providing a surface cooling to the second region AR2 that is
performed with the surface treatment by the plasma AC, and thereby
also maintain the performance of the plasma AC in performing the
surface treatment. 100591 In other words, the invention does not
limit the amount of the gas ejection port 190 and the form and the
range of the gas shape of the second gas CG; in other embodiments,
any plasma device 100 that can provide the air cooling effect
through ejecting the second gas CG so as to avoid influence the
performance of the plasma AC in performing the surface treatment
may all be considered as the plasma device 100 of the present
embodiment.
[0063] As a result, the plasma device 100, when ejecting the plasma
AC, can enable the plasma AC and the second gas CG to be guided to
the surface of the object being treated OB via the nozzle 181 and
the gas ejection port 190, and simultaneously attain the effect of
large area surface treatment via the movement of the object being
treated OB. Moreover, the plasma device 100 can also attain an
effect of cooling the surface of the object being treated by using
the second gas CG, and thereby avoid a risk of influencing the
performance of the plasma AC in performing the surface treatment
due to the temperature of the plasma AC being too high. In
addition, the plasma device 100 can also cool down the first
tubular electrode 120 with the injection and the flowing of the
first gas WG, so as to provide the air cooling effect, thereby
effectively lowering the working temperature of the first tubular
electrode 120 and thus effectively prolonging the service life of
the first tubular electrode 120.
[0064] Besides, in the previous embodiment, although the second gas
CG is, for example, described as to enter the chamber 121 from one
of the at least one intake ports
[0065] IP1 and be ejected after being guided to the gas ejection
port 190 through the second gas channel GC2, the invention is not
limited thereto. Further descriptions, accompanied by FIG. 4 to
FIG. 8B, are provided below with details.
[0066] FIG. 4 is a schematic diagram illustrating architecure of a
plasma device according to another embodiment of the invention.
Referring to FIG. 4, in the present embodiment, a plasma device 400
of FIG. 4 is similar to the plasma device 100 of FIG. 1, except
that, in the embodiment as shown in FIG. 4, the plasma device 400
omits the airflow shroud 116 (illustrated in FIG. 1) of the casing
110 of the plasma device 100, such that the casing 410 merely
extends from the upper bottom 413 above the second tubular
electrode 430. As shown in FIG. 4, in the present embodiment, the
first gas channel GC1 is directly located within the second tubular
electrode 430, and thus is connected with the inside of the gas
ejection port 190. Therefore, the present embodiment may omit the
design of the shroud 116 as illustrated in FIG. 1, and may be
conducive in simplifying the components of the plasma device. In
the present embodiment, the second gas CG may enter the chamber 121
and the chamber 131 from the at least one intake port IP1, and may
be ejected after being guided to the gas ejection port 190 through
the first gas channel GC1 or the second gas channel GC2, which is
connected with the first gas channel GC 1, so as to lower the
temperature at the surface of the object being treated OB.
[0067] Similarly, the plasma device 400 can also cool down the
first tubular electrode 120 and the second tubular electrode 130
with the injections and the flowings of the first gas WG and the
second gas CG, so as to provide an air cooling effect for
effectively lowering the working temperatures of the electrodes
during the plasma treatment, and thus may effectively stabilize and
enhance the performance of the plasma and prolong the service lives
of the electrodes. Moreover, when the plasma AC is ejected, the
plasma device 400 can also enable the plasma AC and the second gas
CG to be guided to the surface of the object being treated OB via
the nozzle 181 and the gas ejection port 190, and simultaneously
attain the effect of large area surface treatment via the movement
of the object being treated OB. In addition, the plasma device 400
can also attain the effect of cooling the surface of the object
being treated by using the second gas CG, and thereby avoid a risk
of influencing the temperature of the plasma AC in performing the
surface treatment due to the temperature of the plasma AC being too
high. Thus, the plasma device 400 also has the same benefits
provided by the plasma device 100, and no further elaboration will
be provided herein.
[0068] FIG. 5 is a schematic diagram illustrating architecture of a
plasma device according to yet another embodiment of the invention.
Referring to FIG. 5, in the present embodiment, a plasma device 500
of FIG. 5 is similar to the plasma device 100 of FIG. 1, except
that, in the embodiment as shown in FIG. 5, the plasma device 500
further includes at least one intake port IP2 and a gas valve shell
GJ, wherein the at least one intake port IP2 is disposed on the
second tubular electrode 530 through the gas valve shell GJ. In
detail, the at least one intake port IP2 is connected with the gas
sources from the outside, and a third gas channel GC3 is formed
between the gas valve shell GJ and the gas ejection port 590 for
the second gas to pass through. Specifically, the second gas CG may
be injected from the at least one intake port IP2, and then be
ejected from an opening at the bottom of the second tubular
electrode 530 after being guided to the gas ejection port 590
through the third gas channel GC3.
[0069] On the other hand, in the present embodiment, the gas valve
shell GJ and the second tubular electrode 530 may be separately
disposed. For example, the gas valve shell GJ may be rotatably
disposed on the tubular electrode 530 via a shaft bearing method,
and thus may remain stationary when the rotating portion RP of the
second tubular electrode 530 rotates. Now, a plurality of sealing
elements SE may be disposed between the gas valve shell GJ and the
second tubular electrode 530, so as to prevent the second gas CG
from escaping. In the present embodiment, a material of the sealing
elements SE may, for example, be rubber, graphite or machinable
ceramic, but the invention is not limited thereto. In another
embodiment, the sealing elements SE may also be graphite rings with
lubrication function. Now, the sealing elements SE may control an
escape ratio of the second gas CG to be in a permissible range, and
may further be conducive in reducing a possible risk of wearing the
gas valve shell GJ as the rotating portion RP of the second tubular
electrode 530 rotates.
[0070] Moreover, in the present embodiment, the third gas channel
GC3, instead of being connected with each chamber, the first gas
channel GC1 and the second gas channel GC2, may be an independent
gas channel. Therefore, the second gas CG and the first gas WG may
be independently controlled as a same or different type of second
gas CG, wherein the second gas CG may selectively be an inert gas
or other proper gas, which does not react with the first gas WG,
according to the actual requirements, so as to reduce the chance of
mixing the plasma AC with the outside air. For example, when
performing a reduction treatment, the first gas WG may selectively
be nitrogen mixed with hydrogen (N.sub.2+H.sub.2) while the second
gas CG may selectively be nitrogen (N.sub.2), and thus the chance
of mixing the oxygen in the outside air with the plasma AC, thereby
enhancing the performance of the treatment, but the invention is
not limited thereto.
[0071] In other embodiment, the second gas CG, in addition to
having the air cooling effect, may also selectively be a reactive
second gas CG or a gas mixture, so that the plasma AC and the
second gas CG perform the surface treatment to the object being
treated OB after undergoing further reactions; for example,
reactions, such as coating or etching, required between the second
gas CG and the surface of the object being treated OB surface may
be enhanced after the surface of the object being treated OB is
activated by the plasma AC. For example, in some embodiments, the
second gas CG may perform a coating process or an etching process
to the object being treated, and simultaneously provide the air
cooling effect as a cold gas. Those skilled in the art should be
able to select a proper type of gas for the second gas CG based on
the actual requirements, and thus no further elaboration will be
provided herein.
[0072] Similarly, the plasma device 500 as similar to the plasma
devices 100 and 400 may also provide the air cooling effect to the
electrodes. Moreover, when the plasma AC is ejected, the plasma
device 500 can also enable the plasma AC and the second gas CG be
guided to the surface of the object being treated OB via the nozzle
181 and the gas ejection port 590, and simultaneously attain the
effect large area surface treatment via the movement of the object
being treated OB. At the same time, the plasma device 500 can also
attain the effect of cooling the surface of the object being
treated by using the second gas CG, and thereby avoid a risk of
influencing the performance of the plasma AC in performing the
surface treatment due to the temperature of the plasma AC being too
high; no further elaboration will be provided herein.
[0073] In the previous embodiments, although the plasma AC and the
second gas CG are, for example, described as to be guided to the
opposite sides of the surface of the object being treated OB, the
invention is not limited thereto. Further descriptions, accompanied
by FIG. 6 to FIG. 7, are provided below with details.
[0074] FIG. 6 is a schematic diagram illustrating architecture of a
plasma device according to still another embodiment of the
invention. Referring to FIG. 6, in the present embodiment, a plasma
device 600 of FIG. 6 is similar to the plasma device 500 of FIG. 5,
except that, in the embodiment as shown in FIG. 6, the gas ejection
port 690 and the nozzle 681 are jointed with each other within the
bottom of the second tubular electrode 530, so as to enable the
plasma AC and the cooled second gas CG to be ejected from a same
outlet at the bottom of the second tubular electrode 530. In other
words, this outlet supplies the plasma and the cold gas CG
simultaneously. In the present embodiment, the plasma AC and the
second gas CG may be guided to a same side at the surface of the
object being treated OB via the same nozzle 681 guided, and thus
may perform the plasma treatment to the object being treated and
provide the air cooling effect. This configuration may be adapted
for a process whereby the cold gas CG and the plasma AC may perform
a surface treatment to the object being treated OB after being mix
reacted with each other; and certainly, the cold gas CG may also
only be used to lower the temperature of the surface of the object
being treated OB that is treated by the plasma AC, and the
invention is not limited thereto.
[0075] FIG. 7 is a schematic diagram illustrating architecture of a
plasma device according to further another embodiment of the
invention. Referring to FIG. 7, in the present embodiment, a plasma
device 700 of FIG. 7 is also similar to the plasma device 500 of
FIG. 5, except that, in the embodiment as shown in FIG. 7, the
outlets of the nozzle 181 and the gas ejection port 790 are
different openings at a same side of the bottom of the second
tubular electrode 530, so that the plasma AC and the second gas CG
may be guided from the different openings at the bottom of the
second tubular electrode 530 to a same side of the surface of the
object being treated OB, and thus may perform the plasma treatment
to the objected being treated and provide the air cooling
effect.
[0076] In the previous embodiments, since the plasma devices 600
and 700 can also cool down the first tubular electrode 120 with the
injection and the flowing of the first gas WG, thereby providing
the air cooling effect and effectively lowering the working
temperature of the first tubular electrode 120, the service life of
the first tubular electrode 120 can effectively be prolonged.
Moreover, when the plasma AC is ejected, the plasma devices 600 and
700 can also enable the plasma AC and the second gas CG to be
guided to the surface of the object being treated OB respectively
via the nozzles 681 and 781 and the gas ejection ports 690 and 790,
and simultaneously attain the effect of large area surface
treatment via the movement of the object being treated OB. In
addition, the plasma devices 600 and 700 can also attain the effect
of cooling the surface of the object being treated by using the
second gas CG, and thereby avoid a risk of influencing the
performance of the plasma AC in performing the surface treatment
due to the temperature of the plasma AC being to high. Thus, the
plasma devices 600 and 700 also have the same benefits provided by
the plasma device 500, and no further elaboration will be provided
herein.
[0077] FIG. 8A is a schematic diagram illustrating architecture of
a plasma device according to an embodiment of the invention. FIG.
8B is a front view schematic diagram illustrating a heat
dissipation blade unit shown in FIG. 8A. Referring to FIG. 8A and
FIG. 8B, in the present embodiment, a plasma device 800 of FIG. 8A
is similar to the plasma device 500 of FIG. 5, wherein a different
therebetween is described as follows. As shown in FIG. 8A and FIG.
8B, in the present embodiment, the plasma device 800 further
includes a heat dissipation blade unit FU. The heat dissipation
blade unit FU is disposed on the second tubular electrode 830,
wherein the second gas CG is absorbed by the heat dissipation blade
unit FU and is guided into the at least one intake port IP2. In
more detail, with the configuration of the heat dissipation blade
unit FU, the temperature of the second gas CG that flows into the
at least one intake port IP2 and the third gas channel GC3 may be
lowered, thereby attaining a more effective air cooling effect.
[0078] In the present embodiment, since the plasma device 800 can
also cool down the first tubular electrode 120 with the injection
and the flowing of the first gas WG, thereby providing the air
cooling effect and effectively lowering the working temperature of
the first tubular electrode 120, the service life of the first
tubular electrode 120 can effectively be prolonged. Moreover, when
the plasma AC is ejected, the plasma device 800 can also enable the
plasma AC and the second gas CG to be guided to the surface of the
object being treated OB via the nozzle 181 and the gas ejection
port 890, and simultaneously attain the effect of large area
surface treatment via the movement of the object being treated OB.
In addition, the plasma device 800 can also attain the effect of
cooling the surface of the object being treated by using the second
gas CG, and thereby avoid a risk of influencing the performance of
the plasma AC in performing the surface treatment due to the
temperature of the plasma AC being too high. Thus, the plasma
device 800 also has the same benefits provided by the plasma device
500, and no further elaboration will be provided herein.
[0079] In summary, the plasma device of the invention can cool down
the first tubular electrode with the injection and the flowing of
the working gas, and thus can provide the air cooling effect,
thereby effectively prolonging the service life of the first
tubular electrode. Moreover, when the plasma is ejected, the plasma
device can also enable the plasma and the gas to be guided to the
surface of the object being treated via the nozzle, and
simultaneously attain the effect of large area surface treatment
via the movement of the object being treated. In addition, the
plasma device can also attain the effect of cooling the surface of
the object being treated by using the gas, and thereby avoid a risk
of influencing the performance of the plasma in performing the
surface treatment due to the temperature of the plasma being too
high.
[0080] It will be apparent to those skilled in the art that various
modifications and variations can be made to the structure of the
present invention without departing from the scope or spirit of the
invention. In view of the foregoing, it is intended that the
present invention cover modifications and variations of this
invention provided they fall within the scope of the following
claims and their equivalents.
* * * * *