U.S. patent application number 14/682591 was filed with the patent office on 2015-10-01 for method of manufacturing semiconductor device.
This patent application is currently assigned to HITACHI KOKUSAI ELECTRIC INC.. The applicant listed for this patent is HITACHI KOKUSAI ELECTRIC INC.. Invention is credited to Tsukasa KAMAKURA, Kenji KAMEDA.
Application Number | 20150275357 14/682591 |
Document ID | / |
Family ID | 53038187 |
Filed Date | 2015-10-01 |
United States Patent
Application |
20150275357 |
Kind Code |
A1 |
KAMAKURA; Tsukasa ; et
al. |
October 1, 2015 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Abstract
Provided is a method of manufacturing a semiconductor device
wherein a cleaning process on the inside of an exhaust buffer
chamber may be performed sufficiently and satisfactorily even if
gases are exhausted using the exhaust buffer chamber. The method
includes: (a) processing a substrate placed on a substrate placing
surface in a processing space by supplying gases onto the substrate
in the processing space through a side facing the substrate placing
surface while exhausting the gases from the processing space using
an exhaust buffer chamber including a space surrounding an outer
circumference of a side portion of the processing space; and (b)
cleaning and inside of the exhaust buffer chamber by supplying a
cleaning gas into the exhaust buffer chamber through a cleaning gas
supply pipe communicating with the space of the exhaust buffer
chamber.
Inventors: |
KAMAKURA; Tsukasa;
(Toyama-shi, JP) ; KAMEDA; Kenji; (Toyama-shi,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
HITACHI KOKUSAI ELECTRIC INC. |
Tokyo |
|
JP |
|
|
Assignee: |
HITACHI KOKUSAI ELECTRIC
INC.
Tokyo
JP
|
Family ID: |
53038187 |
Appl. No.: |
14/682591 |
Filed: |
April 9, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14493828 |
Sep 23, 2014 |
9028648 |
|
|
14682591 |
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Current U.S.
Class: |
438/758 |
Current CPC
Class: |
C23C 16/52 20130101;
C23C 16/4586 20130101; C23C 16/45523 20130101; H01L 21/0228
20130101; C23C 16/4412 20130101; C23C 16/4405 20130101; H01L
21/0217 20130101 |
International
Class: |
C23C 16/44 20060101
C23C016/44; H01L 21/02 20060101 H01L021/02 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 26, 2014 |
JP |
2014-063076 |
Claims
1. A method of manufacturing a semiconductor device, comprising:
(a) processing a substrate placed on a substrate placing surface in
a processing space by supplying gases onto the substrate in the
processing space through a side facing the substrate placing
surface while exhausting the gases from the processing space using
an exhaust buffer chamber including a space surrounding an outer
circumference of a side portion of the processing space; and (b)
cleaning and inside of the exhaust buffer chamber by supplying a
cleaning gas into the exhaust buffer chamber through a cleaning gas
supply pipe communicating with the space of the exhaust buffer
chamber.
Description
CROSS-REFERENCE TO RELATED PATENT APPLICATION
[0001] This U.S. non-provisional patent application is a division
of U.S. patent application Ser. No. 14/493,828, filed Sep. 23,
2014, which claims priority under 35 U.S.C. .sctn.119 to Japanese
Patent Application No. 2014-063076 filed on Mar. 26, 2014 in the
Japanese Patent Office, the entire contents of which are hereby
incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a substrate processing
apparatus, a method of manufacturing a semiconductor device and a
non-transitory computer-readable recording medium.
[0004] 2. Description of the Related Art
[0005] In general, a substrate processing apparatus for performing
processes (e.g., a film forming process) on a substrate (e.g., a
wafer) is used in a process of manufacturing a semiconductor
device. With the scaling-up of a substrate or an increase in the
precision of processes, a single-wafer-type substrate processing
apparatus configured to process substrates one by one has widely
been used as the substrate processing apparatus.
[0006] As a process performed by the single-wafer-type substrate
processing apparatus, there is, for example, a film forming process
using an alternate supply method. An alternate supply process
includes forming a film on a substrate in a processing space by
repetitively performing a cycle including a source gas supply
process, a purge process, a reactive gas supply process and a purge
process a predetermined number of times (n cycles) on the
substrate. Accordingly, to efficiently perform the alternate supply
process, it is necessary to unite a process of uniformly supplying
gases onto the substrate in the processing space with a process of
rapidly exhausting the remnant gases from the processing space.
Thus, some single-wafer-type substrate processing apparatuses are
configured to supply a process gas into a processing space through
an upper side via a shower head serving as a gas dispersion
mechanism, and discharge gases from the center of a substrate
toward an outer circumferential side (i.e., a side portion of the
processing space) of the substrate via an exhaust buffer chamber
which is installed to surround an outer circumference of the side
portion of the processing space and has a downstream side connected
to an exhaust pipe.
[0007] These substrate processing apparatuses need to periodically
remove unnecessary films (reaction byproducts, etc.) adhered to the
shower head or the processing space. Therefore, in some
single-wafer-type substrate processing apparatuses, a cleaning
process is performed on a processing space by supplying a cleaning
gas into the processing space via a shower head (for example, refer
to Patent document 1). In addition, in other substrate processing
apparatuses, a cleaning gas is directly supplied into an exhaust
pipe disposed at a downstream side of a processing space in a gas
exhaust direction to perform a cleaning process on the exhaust pipe
which is a point to which byproducts are easily adhered and from
which removing the byproducts is difficult (for example, refer to
Patent document 2).
[0008] 1. Japanese Patent Laid-open No. 2005-109194
[0009] 2. Japanese Patent Laid-open No. 2004-211168
[0010] However, according to the above-described conventional arts,
a cleaning process may not be sufficiently or satisfactorily
performed on an exhaust buffer chamber.
[0011] For example, when an alternate supply process is performed
on a substrate, a source gas and a reactive gas are alternately
supplied into a processing space as described above. In this case,
there may be cases in which any one gas remains in the exhaust
buffer chamber to cause an unintentional reaction in the exhaust
buffer chamber. When the unintentional reaction occurs, unnecessary
films or byproducts are adhered to an inner wall of the exhaust
buffer chamber. In particular, since the inside of the exhaust
buffer chamber is not under temperature or pressure conditions for
forming a good film unlike the inside of the processing space, a
film having poor characteristics (i.e., a film having a deviation
in film density or film thickness) is formed. Since the poor film
is easily delaminated due to a pressure variation during a switch
of the supply of gases, the delaminated film may intrude into the
processing space, adversely affect characteristics of a film formed
on the substrate, and cause a reduction in yield.
[0012] It is inferred that adhered materials may be removed by
supplying a cleaning gas via a shower head. However, since an
active cleaning gas is deactivated in the processing space before
the active cleaning gas reaches the exhaust buffer chamber, the
inside of the exhaust buffer chamber may not be sufficiently
cleaned. Also, even if the cleaning gas is directly supplied into
an exhaust pipe, the exhaust buffer chamber disposed at an upstream
side of the exhaust pipe may not be sufficiently cleaned.
[0013] To sufficiently perform a cleaning process on the inside of
the exhaust buffer chamber, it is inferred that adhered materials
may be removed by an operator's handwork during maintenance of an
apparatus. However, in this case, a downtime sharply increases,
thereby lowering operational efficiency of the apparatus. That is,
it is difficult to conclude that a cleaning process may be
satisfactorily performed on the inside of the exhaust buffer
chamber.
SUMMARY OF THE INVENTION
[0014] It is a main object of the present invention to provide a
substrate processing apparatus and a method of manufacturing a
semiconductor device, which may sufficiently and satisfactorily
perform a cleaning process on the inside of an exhaust buffer
chamber even if a gas exhaust process is performed using the
exhaust buffer chamber.
[0015] According to one aspect of the present invention, there is
provided a substrate processing apparatus including: a processing
space configured to process a substrate placed on a substrate
placing surface; a gas supply system configured to supply gases
into the processing space through a side facing the substrate
placing surface; an exhaust buffer chamber including a
communication hole communicating with the processing space at least
at a side portion of the processing space and a gas flow blocking
wall extending in a blocking direction of the gases flowing through
the communication hole; a gas exhaust system configured to exhaust
the gases supplied into the exhaust buffer chamber; and a cleaning
gas supply pipe configured to supply a cleaning gas into the
exhaust buffer chamber through a connection point installed between
the communication hole and the gas flow blocking wall.
[0016] According to another aspect of the present invention, there
is provided a method of manufacturing a semiconductor device,
including: (a) processing a substrate placed on a substrate placing
surface in a processing space by supplying gases onto the substrate
in the processing space through a side facing the substrate placing
surface while exhausting the gases from the processing space using
an exhaust buffer chamber including a space surrounding an outer
circumference of a side portion of the processing space; and (b)
cleaning the inside of the exhaust buffer chamber by supplying a
cleaning gas into the exhaust buffer chamber through a cleaning gas
supply pipe communicating with the space of the exhaust buffer
chamber.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] FIG. 1 is a schematic construction view of a
single-wafer-type substrate processing apparatus according to an
exemplary embodiment of the present invention.
[0018] FIG. 2 is a schematic perspective view of an example of the
overall shape of an exhaust buffer chamber of the substrate
processing apparatus of FIG. 1.
[0019] FIG. 3 is a schematic side-sectional view of an example of a
sectional shape of the exhaust buffer chamber of the substrate
processing apparatus of FIG. 1.
[0020] FIG. 4 is a schematic plan view of an example of a planar
shape of the exhaust buffer chamber of the substrate processing
apparatus of FIG. 1.
[0021] FIG. 5 is a flowchart illustrating a substrate processing
process and a cleaning process according to an exemplary embodiment
of the present invention.
[0022] FIG. 6 is a detailed flowchart illustrating a film forming
process of FIG. 5.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
One Embodiment of the Present Invention
[0023] One embodiment of the present invention will now be
described with reference to the accompanying drawings.
[0024] (1) Structure of Substrate Processing Apparatus
[0025] A substrate processing apparatus according to the present
embodiment is configured as a single-wafer-type substrate
processing apparatus for processing substrates serving as
processing objects one by one. As the substrates serving as the
processing objects, for example, there may be a semiconductor wafer
substrate (hereinafter, referred to simply as a "wafer") on which a
semiconductor device is manufactured. Although processes performed
on a substrate may include an etching process, an ashing process
and a film forming process, particularly, the film forming process
will be described in the present embodiment. As a typical example
of the film forming process, there is an alternate supply
process.
[0026] Hereinafter, a structure of a substrate processing apparatus
according to the present embodiment will be described with
reference to FIG. 1. FIG. 1 is a schematic construction diagram of
a single-wafer-type substrate processing apparatus according to the
present embodiment.
[0027] (Process Container)
[0028] As illustrated in FIG. 1, a substrate processing apparatus
100 includes a process container 202. The process container 202 is
configured as, for example, a planar airtight container having a
circular cross-section. Also, the process container 202 is formed
of a metal material, for example, aluminum (Al) or stainless steel
(SUS). A processing space 201 for processing a wafer 200 (e.g.,
silicon wafer) serving as a substrate and a transfer space 203
through which the wafer 200 passes when the wafer 200 is
transferred to the processing space 201 are formed in the process
container 202. The process container 202 includes an upper
container 202a and a lower container 202b. A partition plate 204 is
installed between the upper container 202a and the lower container
202b.
[0029] An exhaust buffer chamber 209 is installed near a peripheral
edge of an outer circumference of the inside of the upper container
202a (upper container 202a). The exhaust buffer chamber 209 will be
described in detail below.
[0030] A substrate loading/unloading port 206 is installed in a
side surface of the lower container 202b and adjacent to a gate
valve 205, and the wafer 200 is transferred between the lower
container 202b and a transfer chamber (not shown) via the substrate
loading/unloading port 206. A plurality of lift pins 207 are
installed on a bottom portion of the lower container 202b. Also,
the lower container 202b is grounded.
[0031] (Substrate Support Unit)
[0032] A substrate support unit 210 for supporting the wafer 200 is
installed in the processing space 201. The substrate support unit
210 mainly includes a substrate placing surface 211 for placing the
wafer 200, a substrate placing table 212 having the substrate
placing surface 211 disposed on a surface thereof, and a heater 213
embedded in the substrate placing table 212 and serving as a
heating source. Through holes 214 through which the lift pins 207
pass are respectively installed in positions corresponding to the
lift pins 207.
[0033] The substrate placing table 212 is supported by a shaft 217.
The shaft 217 penetrates a bottom portion of the process container
202 and is connected to an elevating mechanism 218 outside the
process container 202. By lowering/elevating the shaft 217 and the
substrate placing table 212 by operating the elevating mechanism
218, the wafer 200 placed on the substrate placing surface 211 may
be lowered/elevated. Also, the circumference of a lower end portion
of the shaft 217 is coated with a bellows 219, and the inside of
the process container 202 is air-tightly retained.
[0034] The substrate placing table 212 is lowered during the
transfer of the wafer 200 until the substrate placing surface 211
is in a position (wafer transfer position) opposite to the
substrate loading/unloading port 206. During the processing of the
wafer 200, the substrate placing table 212 is elevated until the
wafer 200 is in a process position (wafer process position) of the
processing space 201 as shown in FIG. 1. Specifically, when the
substrate placing table 212 is lowered to the wafer transfer
position, upper end portions of the lift pins 207 protrude from a
top surface of the substrate placing surface 211 so that the lift
pins 207 can support the wafer 200 from below. Also, when the
substrate placing table 212 is elevated to the wafer process
position, the lift pins 207 are buried from the top surface of the
substrate placing surface 211 so that the substrate placing surface
211 can support the wafer 200 from below. Also, since the lift pins
207 are in direct contact with the wafer 200, the lift pins 207 are
preferably formed of a material, for example, quartz or
alumina.
[0035] (Shower Head)
[0036] A shower head 230 is installed in an upper portion of the
processing space 201 (at an upstream side in a gas supply
direction) and serves as a gas dispersion mechanism. A gas
introduction port 241 is installed at a lid 231 of the shower head
230, and a gas supply system which will be described below is
connected to the gas introduction port 241. Gases introduced
through the gas introduction port 241 are supplied to a buffer
space 232 of the shower head 230.
[0037] The lid 231 of the shower head 230 is formed of a conductive
metal and used as an electrode for generating plasma in the buffer
space 232 or in the processing space 201. An insulating block 233
is installed between the lid 231 and the upper container 202a and
electrically insulates the lid 231 from the upper container
202a.
[0038] The shower head 230 includes a dispersion plate 234 for
dispersing gases supplied via the gas introduction port 241 through
the gas supply system. An upstream side of the dispersion plate 234
is the buffer space 232, and a downstream side thereof is the
processing space 201. A plurality of through holes 234a are
installed in the dispersion plate 234. The dispersion plate 234
faces the substrate placing surface 211.
[0039] A gas guide 235 for forming the flow of supplied gases is
installed in the buffer space 232. The gas guide 235 has a circular
conic shape having the gas introduction port 241 as an apex, and
the diameter of the gas guide 235 increases toward the dispersion
plate 234. A lower end of the gas guide 235 is formed further
outward from a group of the through holes 234a formed at an
outermost circumferential side of the dispersion plate 234.
[0040] (Plasma Generation Unit)
[0041] A matcher 251 and a radio-frequency (RF) power source 252
are connected to the lid 231 of the shower head 230. By adjusting
an impedance using the RF power source 252 and the matcher 251,
plasma is generated in the shower head 230 and the processing space
201.
[0042] (Gas Supply System)
[0043] A common gas supply pipe 242 is connected to the gas
introduction port 241 installed at the lid 231 of the shower head
230. The common gas supply pipe 242 is connected to the gas
introduction port 241 and communicates with the buffer space 232 in
the shower head 230. A first gas supply pipe 243a, a second gas
supply pipe 244a and a third gas supply pipe 245a are connected to
the common gas supply pipe 242. The second gas supply pipe 244a is
connected to the common gas supply pipe 242 via a remote plasma
unit (RPU) 244e.
[0044] A source gas is mainly supplied through a source gas supply
system 243 including the first gas supply pipe 243a, and a reactive
gas is mainly supplied through a reactive gas supply system 244
including the second gas supply pipe 244a. An inert gas is mainly
supplied when the wafer 200 is processed using a purge gas supply
system 245 including the third gas supply pipe 245a, and a cleaning
gas is mainly supplied when the shower head 230 or the processing
space 201 is cleaned. Among gases supplied through the gas supply
system, the source gas may be referred to as a first gas, the
reactive gas may be referred to as a second gas, the inert gas may
be referred to as a third gas, and the cleaning gas [for the
processing space 201] may be referred to as a fourth gas. Also, a
cleaning gas [for the exhaust buffer chamber 209] supplied by an
exhaust buffer chamber cleaning gas supply system which will be
described below, which is one of the gas supply systems, may be
referred to as a fifth gas.
[0045] (Source Gas Supply System)
[0046] A source gas supply source 243b, a mass flow controller
(MFC) 243c which is a flow rate control device (flow rate control
unit), and a valve 243d which is an opening/closing valve are
sequentially installed at the first gas supply pipe 243a in an
upstream direction. Also, a source gas is supplied through the
first gas supply pipe 243a via the MFC 243c, the valve 243d and the
common gas supply pipe 242 into the shower head 230.
[0047] The source gas is one of process gases, for example,
disilicon hexachloride or hexachlorodisilane gas (i.e., SiCl.sub.6
gas), which is a source containing silicon (Si). Also, the source
gas may be any one of a solid, a liquid and a gas at normal
temperature and pressure. When the source gas is a liquid at normal
temperature and pressure, a vaporizer (not shown) may be installed
between the source gas supply source 243b and the MFC 243c. Here,
an example in which the source gas is a gas will be described.
[0048] The source gas supply system 243 is mainly configured by the
first gas supply pipe 243a, the MFC 243c and the valve 243d. Also,
the source gas supply system 243 may include the source gas supply
source 243b and a first inert gas supply system which will be
described below. Since the source gas supply system 243 supplies a
source gas, which is one of process gases, the source gas supply
system 243 corresponds to one of process gas supply systems.
[0049] A downstream end of a first inert gas supply pipe 246a is
connected to the first gas supply pipe 243a at a downstream side of
the valve 243d. An inert gas supply source 246b, an MFC 246c which
is a flow rate control device (flow rate control unit), and a valve
246d which is an opening/closing valve are sequentially installed
at the first inert gas supply pipe 246a in an upstream direction.
An inert gas is supplied through the first inert gas supply pipe
246a via the MFC 246c, the valve 246d and the first gas supply pipe
243a into the shower head 230.
[0050] The inert gas acts as a carrier gas for a source gas, and a
gas which does not react with a source is preferably used as the
inert gas. Specifically, the inert gas may be, for example,
nitrogen (N.sub.2) gas. In addition to N.sub.2 gas, a rare gas,
such as helium (He) gas, neon (Ne), gas, argon (Ar) gas, etc., may
be used.
[0051] A first inert gas supply system is mainly configured by the
first inert gas supply pipe 246a, the MFC 246c and the valve 246d.
Also, the first inert gas supply system may include the inert gas
supply source 246b and the first gas supply pipe 243a. The first
inert gas supply system may be included in the source gas supply
system 243.
[0052] (Reactive Gas Supply System)
[0053] The RPU 244e is installed at a downstream side of the second
gas supply pipe 244a. A reactive gas supply source 244b, an MFC
244c which is a flow rate control device (flow rate control unit),
and a valve 244d which is an opening/closing valve are sequentially
installed at an upstream side of the second gas supply pipe 244a in
an upstream direction. A reactive gas is supplied through the
second gas supply pipe 244a via the MFC 244c, the valve 244d, the
RPU 244e and the common gas supply pipe 242 into the shower head
230. The reactive gas is put into a plasma state by the RPU 244e
and radiated onto the wafer 200.
[0054] The reactive gas is one of process gases. For example,
ammonia (NH.sub.3) gas is used as the reactive gas.
[0055] The reactive gas supply system 244 is mainly configured by
the second gas supply pipe 244a, the MFC 244c and the valve 244d.
Also, the reactive gas supply system 244 may include the reactive
gas supply source 244b, the RPU 244e and a second inert gas supply
system which will be described below. Since the reactive gas supply
system 244 supplies the reactive gas, which is one of the process
gases, the reactive gas supply system 244 corresponds to another
one of the process gas supply systems.
[0056] A downstream side of a second inert gas supply pipe 247a is
connected to the second gas supply pipe 244a at a downstream side
of the valve 244d. An inert gas supply source 247b, an MFC 247c
which is a flow rate control device (flow rate control unit), and a
valve 247d which is an opening/closing valve are sequentially
installed at the second inert gas supply pipe 247a in an upstream
direction. Also, an inert gas is supplied through the second inert
gas supply pipe 247a via the MFC 247c, the valve 247d, the second
gas supply pipe 244a and the RPU 244e into the shower head 230.
[0057] The inert gas acts as a carrier gas or a dilution gas for a
reactive gas. Specifically, the inert gas may be, for example,
nitrogen (N.sub.2) gas. In addition to N.sub.2 gas, a rare gas,
such as He gas, Ne, gas, Ar gas, etc., may be used.
[0058] The second inert gas supply system is mainly configured by
the second inert gas supply pipe 247a, the MFC 247c and the valve
247d. Also, the second inert gas supply system may include the
inert gas supply source 247b, the second gas supply pipe 244a and
the RPU 244e. The second inert gas supply system may be included in
the reactive gas supply system 244.
[0059] (Purge Gas Supply System)
[0060] A purge gas supply source 245b, an MFC 245c which is a flow
rate control device (flow rate control unit), and a valve 245d
which is an opening/closing valve are sequentially installed at the
third gas supply pipe 245a in an upstream direction. In a substrate
processing process, an inert gas serving as a purge gas is supplied
through the third gas supply pipe 245a via the MFC 245c, the valve
245d and the common gas supply pipe 242 into the shower head 230.
Also, in a processing space cleaning process, an inert gas serving
as a carrier gas or dilution gas for a cleaning gas is supplied via
the MFC 245c, the valve 245d and the common gas supply pipe 242
into the shower head 230 when necessary.
[0061] An inert gas supplied from the purge gas supply source 245b
acts as a purge gas for purging gases remaining in the process
container 202 or the shower head 230 in the substrate processing
process. Also, the inert gas may act as a carrier gas or dilution
gas for a cleaning gas in the processing space cleaning process.
Specifically, the inert gas may be, for example, nitrogen (N.sub.2)
gas. In addition to N.sub.2 gas, a rare gas, such as He gas, Ne,
gas, Ar gas, etc., may be used.
[0062] The purge gas supply system 245 is mainly configured by the
third gas supply pipe 245a, the MFC 245c and the valve 245d. Also,
the purge gas supply system 245 may include the purge gas supply
source 245b and a processing space cleaning gas supply system which
will be described below.
[0063] (Processing Space Cleaning Gas Supply System) A downstream
side of a processing space cleaning gas supply pipe 248a is
connected to the third gas supply pipe 245a at a downstream side of
the valve 245d. A processing space cleaning gas supply source 248b,
an MFC 248c which is a flow rate control device (flow rate control
unit), and a valve 248d which is an opening/closing valve are
sequentially installed at the processing space cleaning gas supply
pipe 248a in an upstream direction. In the processing space
cleaning process, a cleaning gas is supplied through the third gas
supply pipe 245a via the MFC 248c, the valve 248d and the common
gas supply pipe 242 into the shower head 230.
[0064] The cleaning gas supplied from the processing space cleaning
gas supply source 248b acts as a cleaning gas for removing
byproducts adhered to the shower head 230 or the process container
202 in the processing space cleaning process. Specifically, for
example, nitrogen trifluoride (NF.sub.3) gas may be used as the
cleaning gas. Also, for example, hydrogen fluoride (HF) gas,
chlorine trifluoride (C1F.sub.3) gas, fluorine (F.sub.2) gas, and a
combination thereof may be used as the cleaning gas.
[0065] The processing space cleaning gas supply system is mainly
configured by the processing space cleaning gas supply pipe 248a,
the MFC 248c and the valve 248d. Also, the processing space
cleaning gas supply system may include the processing space
cleaning gas supply source 248b and the third gas supply pipe 245a.
The processing space cleaning gas supply system may be included in
the purge gas supply system 245.
[0066] (Exhaust Buffer Chamber Cleaning Gas Supply System)
[0067] The substrate processing apparatus 100 includes an exhaust
buffer chamber cleaning gas supply system 249 serving as a gas
supply system in addition to the process gas cleaning gas supply
system. The exhaust buffer chamber cleaning gas supply system 249
includes an exhaust buffer chamber cleaning gas supply pipe 249a
(hereinafter, referred to simply as "cleaning gas supply pipe")
configured to directly communicate with a top surface side of the
exhaust buffer chamber 209. An exhaust buffer chamber cleaning gas
supply source 249b, an MFC 249c which is a flow rate control device
(flow rate control unit), and a valve 249d which is an
opening/closing valve are sequentially installed at the cleaning
gas supply pipe 249a in an upstream direction. Also, a cleaning gas
is supplied through the cleaning gas supply pipe 249a via the MFC
249c and the valve 249d into the exhaust buffer chamber 209.
[0068] The cleaning gas supplied from the exhaust buffer chamber
cleaning gas supply source 249b acts as a cleaning gas for removing
byproducts adhered to an inner wall of the exhaust buffer chamber
209. Specifically, for example, nitrogen trifluoride (NF.sub.3) gas
may be used as the cleaning gas. Also, for example, hydrogen
fluoride (HF) gas, chlorine trifluoride (ClF.sub.3) gas, fluorine
(F.sub.2) gas, and a combination thereof may be used as the
cleaning gas. Also, when the exhaust buffer chamber cleaning gas
supply source 249b supplies the same type of cleaning gas as the
processing space cleaning gas supply source 248b, the exhaust
buffer chamber cleaning gas supply source 249b may not be
necessarily installed separately from the processing space cleaning
gas supply source 248b, but one of the exhaust buffer chamber
cleaning gas supply source 249b and the processing space cleaning
gas supply source 248b may be used in common.
[0069] The exhaust buffer chamber cleaning gas supply system 249 is
mainly configured by the cleaning gas supply pipe 249a, the MFC
249c and the valve 249d. Also, the exhaust buffer chamber cleaning
gas supply system 249 may include the exhaust buffer chamber
cleaning gas supply source 249b.
[0070] (Gas Exhaust System)
[0071] An exhaust system for exhausting an atmosphere of the
process container 202 includes a plurality of exhaust pipes
connected to the process container 202. Specifically, the exhaust
system includes a first exhaust pipe (not shown) connected to the
transfer space 203 of the lower container 202b, a second exhaust
pipe 222 connected to the exhaust buffer chamber 209 of the upper
container 202a, and a third exhaust pipe 236 connected to the
buffer space 232 of the shower head 230.
[0072] (First Gas Exhaust System)
[0073] The first exhaust pipe is connected to a side surface or
bottom surface of the transfer space 203. A turbo molecular pump
(TMP) (not shown) which is a vacuum pump for realizing a high
vacuum or ultrahigh vacuum is installed at the first exhaust pipe.
Also, a valve (not shown) is installed at the first exhaust pipe at
a downstream side of the TMP, at an upstream side thereof, or at
both sides thereof. A dry pump (DP) (not shown) may be installed
together with the TMP at the first exhaust pipe. When the TMP
operates, the DP functions as a subsidiary pump of the TMP. That
is, the TMP and the DP exhaust an atmosphere of the transfer space
203 via the first exhaust pipe. At this time, since it is difficult
for the TMP alone, which is a high vacuum (or ultrahigh vacuum)
pump, to exhaust the atmosphere of the transfer space 203 to an
atmospheric pressure, the DP is used as the subsidiary pump
configured to exhaust the atmosphere of the transfer space 203 to
the atmospheric pressure.
[0074] A first gas exhaust system is mainly configured by the first
exhaust pipe, the TMP, the DP and the valve.
[0075] (Second Gas Exhaust System)
[0076] The second exhaust pipe 222 is connected to the inside of
the exhaust buffer chamber 209 via an exhaust hole 221 installed in
a top surface or side portion of the exhaust buffer chamber 209. An
auto pressure controller (APC) 223 serving as a pressure control
device for controlling the inside of the processing space 201,
which communicates with the exhaust buffer chamber 209, to a
predetermined pressure is installed at the second exhaust pipe 222.
The APC 223 includes a valve body (not shown) of which an opening
rate may be adjusted, and adjusts a conductance of the second
exhaust pipe 222 in response to an instruction from a controller
260 which will be described below. A vacuum pump 224 is installed
at the second exhaust pipe 222 at a downstream side of the APC 223.
The vacuum pump 224 exhausts an atmosphere of the exhaust buffer
chamber 209 and an atmosphere of the processing space 201 which
communicates with the exhaust buffer chamber 209, via the second
exhaust pipe 222. Also, valves (not shown) are installed at the
second exhaust pipe 222 at a downstream side of the APC 223, an
upstream side of the APC 223, or both sides thereof.
[0077] A second gas exhaust system is mainly configured by the
second exhaust pipe 222, the APC 223, the vacuum pump 224 and a
valve (not shown). Also, the vacuum pump 224 may use the DP in
common with the first gas exhaust system.
[0078] (Third Gas Exhaust System)
[0079] The third exhaust pipe 236 is connected to a top surface or
side surface of the buffer space 232. That is, the third exhaust
pipe 236 is connected to the shower head 230 and thus, communicates
with the buffer space 232 of the shower head 230. A valve 237 is
installed at the third exhaust pipe 236. Also, a pressure adjustor
238 is installed at the third exhaust pipe 236 at a downstream side
of the valve 237. A vacuum pump 239 is installed at the third
exhaust pipe 236 at a downstream side of the pressure adjustor 238.
The vacuum pump 239 exhausts an atmosphere of the buffer space 232
via the third exhaust pipe 236.
[0080] A third gas exhaust system is mainly configured by the third
exhaust pipe 236, the valve 237, the pressure adjustor 238 and the
vacuum pump 239. Also, the vacuum pump 239 may use the DP in common
with the first gas exhaust system.
[0081] (Controller)
[0082] The substrate processing apparatus 100 includes the
controller 260 configured to control an operation of each of
constitutional elements of the substrate processing apparatus 100.
The controller 260 includes at least an operation unit 261 and a
memory unit 262. The controller 260 is connected to each of the
constitutional elements, calls a program or recipe from the memory
unit 262 in response to an instruction from the controller 260 or a
user, and controls the operation of each of the constitutional
elements according to the contents of the program or the recipe.
Specifically, the controller 260 is configured to control
operations of the gate valve 205, the elevating mechanism 218, the
heater 213, a radio-frequency (RF) power source 252, the matcher
251, the MFCs 243c to 248c, the valves 243d to 248d, the MFC 249c,
the valve 249d, the APC 223, the TMP, the DP, the vacuum pumps 224
and 239, the valve 237, etc.
[0083] The controller 260 may be configured as a dedicated computer
or configured as a general-purpose computer. For example, the
controller 260 according to the present embodiment may be
configured by preparing an external memory device storing a program
as described above, e.g., a magnetic disk (a magnetic tape, a
flexible disk, a hard disk, etc.), an optical disc (a compact disc
(CD), a digital versatile disc (DVD), etc.), a magneto-optical (MO)
disc, or a semiconductor memory (a Universal Serial Bus (USB)
memory, a memory card, etc.), and then installing the program in a
general-purpose computer using the external memory device.
[0084] In addition, means for supplying a program to a computer are
not limited to using the external memory device. For example, a
program may be supplied to a computer using communication means,
e.g., the Internet or an exclusive line, without using the external
memory device. The memory unit 262 or the external memory device
may be configured as a non-transitory computer-readable recording
medium. Hereinafter, the memory unit 262 and the external memory
device may also be referred to together simply as a `recording
medium.` Also, when the term `recording medium` is used in the
present disclosure, it may be understood as only the memory unit
262, only the external memory device, or both the memory unit 262
and the external memory device.
[0085] (2) Details of Exhaust Buffer Chamber
[0086] Here, the exhaust buffer chamber 209 formed in the upper
container 202a of the process container 202 will be described in
detail with reference to FIGS. 2 through 4.
[0087] FIG. 2 is a schematic perspective view of an example of the
overall shape of an exhaust buffer chamber of the substrate
processing apparatus of FIG. 1. FIG. 3 is a schematic
side-sectional view of an example of a sectional shape of the
exhaust buffer chamber of the substrate processing apparatus of
FIG. 1. FIG. 4 is a schematic plan view of an example of a planar
shape of the exhaust buffer chamber of the substrate processing
apparatus of FIG. 1.
[0088] (Overall Shape)
[0089] The exhaust buffer chamber 209 functions as a buffer space
when gases contained in the processing space 201 are discharged
toward the circumference of a side portion of the processing space
201. Thus, the exhaust buffer chamber 209 includes a space
surrounding an outer circumference of the side portion of the
processing space 201 as shown in FIG. 2. That is, in a plan view,
the exhaust buffer chamber 209 includes a space formed in a ring
shape (annular shape) at an outer circumferential side of the
processing space 201.
[0090] (Sectional Shape)
[0091] As shown in FIG. 3, a ceiling surface and both wall surfaces
of the space of the exhaust buffer chamber 209 are formed by the
upper container 202a, and a bottom surface of the space of the
exhaust buffer chamber 209 is formed by the partition plate 204.
Also, a communication hole 209b which communicates with the
processing space 201 is installed at an inner circumferential side
of the space of the exhaust buffer chamber 209, and gases supplied
into the processing space 201 are supplied through the
communication hole 209b into the space of the exhaust buffer
chamber 209. The gases supplied into the space of the exhaust
buffer chamber 209 are prevented from flowing due to a sidewall
surface 209a of an outer circumferential side constituting the
space of the exhaust buffer chamber 209, and collide with the
sidewall surface 209a. That is, one sidewall constituting the space
of the exhaust buffer chamber 209 (a sidewall of the outer
circumferential side) functions as a gas flow blocking wall 209a,
which extends in a direction in which the flow of gases passing
through the communication hole 209b is blocked. The communication
hole 209b which communicates with the processing space 201 is
installed at another sidewall (a sidewall of the inner
circumferential side) opposite to the gas flow blocking wall 209a.
Thus, the exhaust buffer chamber 209 includes the communication
hole 209b which communicates with the processing space 201 at least
at the side portion of the processing space 201, and the gas flow
blocking wall 209a extending in the direction in which the flow of
gases passing through the communication hole 209b is blocked.
[0092] In addition, the space of the exhaust buffer chamber 209
extends to surround the outer circumference of the side portion of
the processing space 201. Thus, the communication hole 209b
installed in the sidewall of the inner circumferential side of the
space of the exhaust buffer chamber 209 is installed to extend
throughout the entire circumference of the outer circumference of
the side portion of the processing space 201. In this case, in
consideration of the fact that the exhaust buffer chamber 209
functions as a buffer space for exhausting gases, a size of the
communication hole 209b obtained in a side-sectional height
direction is preferably less than a size (height) of the space of
the exhaust buffer chamber 209, which is obtained in the
side-sectional height direction.
[0093] (Connection of Exhaust System)
[0094] As shown in FIG. 2, the second exhaust pipe 222 of the
second gas exhaust system is connected to the space of the exhaust
buffer chamber 209. Thus, gases supplied into the processing space
201 flow into the exhaust buffer chamber 209 through the
communication hole 209b serving as a gas flow path between the
processing space 201 and the exhaust buffer chamber 209 (refer to
arrows of FIG. 2), and are exhausted through the second exhaust
pipe 222. Due to the above-described structure, the gases of the
processing space 201 may be rapidly exhausted. Also, the gases may
be uniformly exhausted in an outer circumferential direction from
the wafer 200. Accordingly, the gases may be uniformly supplied to
the surface of the wafer 200. As a result, an in-plane surface of a
substrate may be uniformly processed.
[0095] (Connection of Cleaning Gas Supply System)
[0096] As shown in FIG. 2, the cleaning gas supply pipe 249a of the
exhaust buffer chamber cleaning gas supply system 249 is connected
to a side of a top surface of the space of the exhaust buffer
chamber 209. Thus, a cleaning gas supplied from the exhaust buffer
chamber cleaning gas supply source 249b is supplied into the
exhaust buffer chamber 209 through the cleaning gas supply pipe
249a.
[0097] From a cross-section obtained in a diametral direction of an
annulus, as shown in FIG. 3, in the cleaning gas supply pipe 249a
connected to the exhaust buffer chamber 209, a connection point
which is connected to the space of the exhaust buffer chamber 209
is installed between the communication hole 209b serving as a gas
flow path from the processing space 201 to the exhaust buffer
chamber 209 and the gas flow blocking wall 209a serving as the
sidewall of the outer circumferential side of the space of the
exhaust buffer chamber 209. That is, the cleaning gas supply pipe
249a supplies the cleaning gas into the exhaust buffer chamber 209
at a downstream side of the communication hole 209b in a gas flow
direction and at an upstream side of the gas flow blocking wall
209a in the gas flow direction.
[0098] In addition, to uniformize the supply of the cleaning gas
into the exhaust buffer chamber 209, the cleaning gas supply pipe
249a is preferably connected to the exhaust buffer chamber 209 via
gas supply grooves 249e.
[0099] As shown in FIG. 2 or FIG. 3, the gas supply grooves 249e
are formed in the ceiling surface of the space of the exhaust
buffer chamber 209. Also, as shown in FIG. 4, the gas supply
grooves 249e are sequentially formed in a circumferential direction
to surround the processing space 201. That is, the gas supply
grooves 249e are formed to extend throughout the entire
circumference of the exhaust buffer chamber 209. A sectional shape
of the gas supply grooves 249e is not specifically limited as long
as the gas supply grooves 249e are sequentially formed in the
circumferential direction. Each of the gas supply grooves 249e may
have an angular groove shape as shown in FIGS. 2 and 3 or other
shapes [e.g., a circular groove shape].
[0100] Even if only one cleaning gas supply pipe 249a is connected
to the exhaust buffer chamber 209 via the gas supply grooves 249e,
after the cleaning gas diffuses into the entire circumference along
the gas supply grooves 249e through the cleaning gas supply pipe
249a, the cleaning gas is supplied into the exhaust buffer chamber
209. Accordingly, the supply of the cleaning gas into the exhaust
buffer chamber 209 may be uniformized, and the supply of the
cleaning gas may be inhibited from concentrating on a specific
point [e.g., near the connection point of the cleaning gas supply
pipe 249a].
[0101] However, as long as the supply of the cleaning gas may be
uniformized, the cleaning gas supply pipe 249a may not be
necessarily connected to the exhaust buffer chamber 209 via the gas
supply grooves 249e. For example, when a plurality of cleaning gas
supply pipes 249a may be installed, each of the cleaning gas supply
pipes 249a may be connected to the exhaust buffer chamber 209 at a
plurality of the connection point. In this case, the supply of the
cleaning gas into the exhaust buffer chamber 209 may be similarly
uniformized.
[0102] (3) Substrate Processing Process
[0103] Next, a process of forming a thin film on the wafer 200
using the substrate processing apparatus 100 will be described as
one process of a method of manufacturing a semiconductor device. In
the following description, an operation of each of constitutional
elements of the substrate processing apparatus 100 is controlled by
the controller 260.
[0104] Here, an example in which a silicon nitride (SiN) film is
formed as a silicon-containing film on the wafer 200 by means of an
alternate supply method using SiCl.sub.6 gas as a source gas (first
process gas) and NH.sub.3 gas as a reactive gas (second process
gas) will be described.
[0105] FIG. 5 is a flowchart illustrating a substrate processing
process and a cleaning process according to the present embodiment.
FIG. 6 is a detailed flowchart of a film forming process shown in
FIG. 5.
[0106] (Substrate Loading/Placing Process S102)
[0107] In the substrate processing apparatus 100, the lift pins 207
penetrate the through holes 214 of the substrate placing table 212
by lowering the substrate placing table 212 to the transfer
position of the wafer 200. As a result, the lift pins 207 protrude
only a predetermined height from the surface of the substrate
placing table 212. Subsequently, the gate valve 205 is opened so
that the transfer space 203 may communicate with a carry chamber
(not shown). The wafer 200 is loaded from the carry chamber into
the transfer space 203 using a wafer carrier (not shown), and then
carried onto the lift pins 207. Thus, the wafer 200 is supported in
a horizontal posture on the lift pins 207 protruding from the
surface of the substrate placing table 212.
[0108] When the wafer 200 is loaded into the process container 202,
the wafer carrier escapes from the process container 202, and the
gate valve 205 is closed to air-tightly close the inside of the
process container 202. Thereafter, the wafer 200 is placed on the
substrate placing surface 211 installed on the substrate placing
table 212 by elevating the substrate placing table 212. Also, the
wafer 200 is elevated to the above-described process position of
the processing space 201 by elevating the substrate placing table
212.
[0109] When the wafer 200 is loaded into the process container 202,
the valve of the first gas exhaust system is put into an open state
(is opened), so that the transfer space 203 may communicate with
the TMP and the TMP may communicate with the DP. Meanwhile, the
valves of the exhaust system other than the valve of the first gas
exhaust system are put into a closed state (are closed). Thus, an
atmosphere of the transfer space 203 is exhausted due to the TMP
and the DP, and the process container 202 reaches a high vacuum
(ultrahigh vacuum) state (e.g., a pressure of 10.sup.-5 Pa or
less). During the current process, the process container 202 is put
into a high vacuum (ultrahigh vacuum) state to reduce a difference
in pressure between the process container 202 and the carry chamber
which is similarly maintained in a high vacuum (ultrahigh vacuum)
state (e.g., a pressure of 10.sup.-6 Pa or less). In this state,
the gate valve 205 is opened, and the wafer 200 is loaded from the
carry chamber into the transfer space 203. Also, the TMP and the DP
are continuously operated during the processes shown in FIGS. 5 and
6 not to cause a delay in a processing process due to rises in
operations of the TMP and the DP.
[0110] After the wafer 200 is loaded into the transfer space 203,
when the wafer 200 is elevated to the process position in the
processing space 201, the valve of the first gas exhaust system is
put into a closed state. Thus, the transfer space 203 is cut off
from the TMP, so the exhaust of the transfer space 203 due to the
TMP is ended. Meanwhile, the exhaust buffer chamber 209
communicates with the APC 223 by opening the valve of the second
gas exhaust system, and also the APC 223 communicates with the
vacuum pump 224. The APC 223 may adjust a conductance of the second
exhaust pipe 222 and control the flow rate of gases exhausted from
the exhaust buffer chamber 209 due to the vacuum pump 224, so that
the processing space 201 which communicates with the exhaust buffer
chamber 209 may be maintained under a predetermined pressure. Also,
the valves of other exhaust systems are maintained in a closed
state. Also, when the valves of the first gas exhaust system are
closed off, an operation of the TMP is stably maintained by putting
a valve disposed at the downstream side of the TMP into a closed
state after putting a valve disposed at the upstream side of the
TMP into a closed state.
[0111] During the above-described process, N.sub.2 gas serving as
an inert gas may be supplied into the process container 202 through
the inert gas supply system while exhausting the inside of the
process container 202. That is, while exhausting the inside of the
process container 202 via the exhaust buffer chamber 209 using the
TMP or DP, N.sub.2 gas may be supplied into the process container
202 by opening at least the valve 245d of the third gas supply
system. Thus, particles may be inhibited from being adhered onto
the wafer 200.
[0112] In addition, when the wafer 200 is placed on the substrate
placing table 212, power is supplied to the heater 213 embedded in
the substrate placing table 212, and the surface of the wafer 200
is controlled to a predetermined processing temperature. In this
case, a temperature of the heater 213 is adjusted by controlling an
amount of current supplied into the heater 213 based on temperature
information detected by a temperature sensor (not shown).
[0113] Thus, in the substrate loading/placing process S102, the
inside of the processing space 201 is controlled to a predetermined
processing pressure and also, a temperature of the surface of the
wafer 200 is controlled to a predetermined processing temperature.
Here, the predetermined processing temperature and the
predetermined processing pressure are a processing temperature and
a processing pressure at which an SiN film may be formed using an
alternate supply method during a film forming process S104 which
will be described below. That is, the predetermined processing
temperature and the predetermined processing pressure are a
processing temperature and a processing pressure at which a source
gas supplied during a first process gas (source gas) supply process
S202 does not self-decompose. Specifically, the processing
temperature is in the range of room temperature to a temperature of
about 500.degree. C. and preferably, in the range of room
temperature to a temperature of about 400.degree. C., and the
processing pressure is in the range of 50 Pa to 5000 Pa. The
processing temperature and the processing pressure are maintained
during the film forming process S104 which will be described
below.
[0114] (Film Forming Process S104)
[0115] After the substrate loading/placing process S102, the film
forming process S104 is performed. Hereinafter, the film forming
process S104 will be described in detail with reference to FIG. 6.
Also, the film forming process S104 is a cyclic processing process
of repeating a process of alternately supplying different process
gases.
[0116] (First Process Gas Supply Process S202)
[0117] In the film forming process S104, a first process gas
(source gas) supply process S202 is preferentially performed. When
a first process gas is, for example, a liquid source such as
TiCl.sub.4, the source is vaporized to generate a source gas (i.e.,
TiCl.sub.4 gas) (preliminary vaporization) in advance. The
preliminary vaporization of the source gas may be performed
simultaneously with the above-described substrate loading/placing
process S102. This is because a predetermined time is required to
stably generate the source gas.
[0118] When the first process gas is supplied, the supply of the
source gas (SiCl.sub.6 gas) into the processing space 201 is
started by opening the valve 243d and adjusting the MFC 243c such
that the source gas has a predetermined flow rate. A supply flow
rate of the source gas is in the range of, for example, 100 sccm to
500 sccm. The source gas is dispersed by the shower head 230 and
uniformly supplied onto the wafer 200 in the processing space
201.
[0119] In this case, the valve 246d of the first inert gas supply
system is opened, and an inert gas (N.sub.2 gas) is supplied
through the first inert gas supply pipe 246a. A supply flow rate of
the inert gas is in the range of, for example, 500 sccm to 5000
sccm. Also, the inert gas may be supplied through the third gas
supply pipe 245a of the purge gas supply system.
[0120] The remnant source gas is uniformly supplied from the
processing space 201 into the exhaust buffer chamber 209, flows
through the second exhaust pipe 222 of the second gas exhaust
system, and is exhausted. Specifically, the valve of the second gas
exhaust system is put into an open state, and a pressure of the
processing space 201 is controlled by the APC 223 to be a
predetermined pressure. Also, all the valves of the exhaust systems
other than the valve of the second gas exhaust system are in a
closed state.
[0121] At this time, a processing temperature and a processing
pressure in the processing space 201 are a processing temperature
and a processing pressure at which the source gas does not
self-decompose. Accordingly, gas molecules of the source gas are
adsorbed onto the wafer 200.
[0122] After a predetermined time has elapsed since the supply of
the source gas started, the valve 243d is closed off, and the
supply of the source gas is stopped. A supply time of the source
gas and the carrier gas is in the range of, for example, 2 seconds
to 20 seconds.
[0123] (First Shower Head Exhaust Process S204)
[0124] After the supply of the source gas is stopped, an inert gas
(N.sub.2 gas) is supplied through the third gas supply pipe 245a,
and the shower head 230 is purged. From among the valves of the gas
exhaust system, the valve of the second gas exhaust system is put
into a closed state, while the valve 237 of the third gas exhaust
system is put into an open state. The valves of other gas exhaust
system are in a closed state. That is, when the shower head 230 is
purged, the exhaust buffer chamber 209 is cut off from the APC 223
to stop the control of pressure due to the APC 223, while the
buffer space 232 communicates with the vacuum pump 239. Thus, the
source gas remaining in the shower head 230 [buffer space 232] is
exhausted by the vacuum pump 239 via the third exhaust pipe 236
through the shower head 230. At this time, the valve installed at a
downstream side of the APC 223 may be opened.
[0125] A flow rate of the inert gas (N.sub.2 gas) supplied during
the first shower head exhaust process S204 is in the range of, for
example, 1000 sccm to 10000 sccm. Also, a supply time of the inert
gas is in the range of, for example, 2 seconds to 10 seconds.
[0126] (First Processing Space Exhaust Process S206)
[0127] When the purge of the shower head 230 ends, the processing
space 201 is subsequently purged by supplying the inert gas
(N.sub.2 gas) through the third gas supply pipe 245a. At this time,
the valve of the second gas exhaust system is put into an open
state, and a pressure of the processing space 201 is controlled by
the APC 223 to be a predetermined pressure. Meanwhile, all the
valves of the exhaust systems other than the valve of the second
gas exhaust system are put into a closed state. Thus, the source
gas which has not been adsorbed to the wafer 200 during the first
process gas supply process S202 is removed by the vacuum pump 224
of the second gas exhaust system from the processing space 201 via
the second exhaust pipe 222 and the exhaust buffer chamber 209.
[0128] A supply flow rate of the inert gas (N.sub.2 gas) during the
first processing space exhaust process S206 is in the range of, for
example, 1000 sccm to 10000 sccm. Also, a supply time of the inert
gas is in the range of, for example, 2 seconds to 10 seconds.
[0129] Although the present embodiment has described an example in
which the first processing space exhaust process S206 is performed
after the first shower head exhaust process S204, the first shower
head exhaust process S204 may be performed after the first
processing space exhaust process S206. Also, the first shower head
exhaust process S204 may be performed simultaneously with the first
processing space exhaust process S206.
[0130] (Second Process Gas Supply Process S208)
[0131] When the purge of the shower head 230 and the processing
space 201 is completed, a second process gas (reactive gas) supply
process S208 is performed. During the second process gas supply
process S208, the valve 244d is opened, and the supply of a
reactive gas (NH.sub.3 gas) via the RPU 244e and the shower head
230 into the processing space 201 starts. In this case, the MFC
244c is adjusted such that the reactive gas has a predetermined
flow rate. A supply flow rate of the reactive gas is in the range
of, for example, 1000 sccm to 10000 sccm.
[0132] A reactive gas in a plasma state is dispersed by the shower
head 230 and uniformly supplied onto the wafer 200 in the
processing space 201, and reacts with a source-gas-containing film
adsorbed onto the wafer 200 to generate an SiN film on the wafer
200.
[0133] In this case, the valve 247d of the second inert gas supply
system is opened, and the inert gas (N.sub.2 gas) is supplied
through the second inert gas supply pipe 247a. A supply flow rate
of the inert gas is in the range of, for example, 500 sccm to 5000
sccm. Also, the inert gas may be supplied through the third gas
supply pipe 245a of the purge gas supply system.
[0134] The remnant reactive gas or reaction byproducts are supplied
from the processing space 201 into the exhaust buffer chamber 209,
flow through the second exhaust pipe 222 of the second gas exhaust
system, and are exhausted. Specifically, the valve of the second
gas exhaust system is put into an open state, and a pressure of the
processing space 201 is controlled by the APC 223 to be a
predetermined pressure. Also, all the valves of the exhaust systems
other than the valve of the second gas exhaust system are in a
closed state.
[0135] After a predetermined time has elapsed since the supply of
the reactive gas started, the valve 244d is closed off, and the
supply of the reactive gas is stopped. A supply time of the
reactive gas and the carrier gas is in the range of, for example, 2
seconds to 20 seconds.
[0136] (Second Shower Head Exhaust Process S210)
[0137] After the supply of the reactive gas is stopped, a second
shower head exhaust process S210 is performed to remove the
reactive gas or reaction byproducts remaining in the shower head
230. Sine the second shower head exhaust process S210 may be
performed in the same manner as the previously described first
shower head exhaust process S204, descriptions thereof are omitted
here.
[0138] (Second Processing Space Exhaust Process S212)
[0139] After the purge of the shower head 230 ends, a second
processing space exhaust process S212 is performed to remove the
reactive gas or reaction byproducts remaining in the processing
space 201. Since the second processing space exhaust process S212
may be performed in the same manner as the previously described
first processing space exhaust process S206, descriptions thereof
are omitted here.
[0140] (Determining Process S214) The above-described first process
gas supply process S202, first shower head exhaust process S204,
first processing space exhaust process S206, second process gas
supply process S208, second shower head exhaust process S210, and
second processing space exhaust process S212 are included in one
cycle. The controller 260 determines whether the cycle has been
performed a predetermined number of times (n cycles) (S214). When
the cycle has been performed the predetermined number of times, a
silicon nitride (SiN) film is formed on the wafer 200 to a
predetermined film thickness.
[0141] (Processed Wafer Number Determining Process S106)
[0142] After the film forming process S104 including the
above-described processes S202 to S214 is performed, as shown in
FIG. 5, it is determined whether the number of wafers 200 processed
during the film forming process S104 has reached a predetermined
number (S106).
[0143] When the number of the wafers 200 processed in the film
forming process S104 has not reached the predetermined number, the
processed wafers 200 are withdrawn, and the substrate processing
process enters a substrate loading/unloading process S108 to start
processing the next wafer 200 which is on standby. Also, when the
film forming process S104 has been performed on a predetermined
number of wafers 200, the processed wafers 200 are withdrawn, and
the substrate processing process enters a substrate unloading
process S110 to enter into a state where the wafer 200 is absent in
the process container 202.
[0144] (Substrate Loading/Unloading Process S108)
[0145] In the substrate loading/unloading process S108, by lowering
the substrate placing table 212, the wafer 200 is supported on the
lift pins 207 protruding from the surface of the substrate placing
table 212. Thus, the wafer 200 is moved from the process position
to the transfer position. Afterwards, the gate valve 205 is opened,
and the wafer 200 is unloaded out of the process container 202
using a wafer carrier. In this case, the valve 245d is closed off,
and the supply of the inert gas through the third gas supply system
into the process container 202 is stopped.
[0146] While the wafer 200 is being moved from the process position
to the transfer position during the substrate loading/unloading
process S108, the valve of the second gas exhaust system is put
into a closed state, and the control of a pressure due to the APC
223 is stopped. Meanwhile, by putting the valve of the first gas
exhaust system into an open state and exhausting the atmosphere of
the transfer space 203 using the TMP and the DP, the process
container 202 is maintained in a high vacuum (ultrahigh vacuum)
state (e.g., a pressure of 10.sub.-5 Pa or less), and a difference
in pressure between the process container 202 and the carry chamber
similarly maintained in a high vacuum (ultrahigh vacuum) state
(e.g., a pressure of 10.sup.-6 Pa or less) is reduced. In this
state, the gate valve 205 is opened, and the wafer 200 is unloaded
from the process container 202 into the carry chamber.
[0147] Afterwards, in the substrate loading/unloading process S108,
the next new wafer 200 which is on standby is loaded into the
process container 202 in the same order as in the above-described
substrate loading/placing process S102. The wafer 200 is elevated
to the process position in the processing space 201 and also, the
inside of the processing space 201 is set to a predetermined
process temperature and a predetermined process pressure to enter
into a state where the next film forming process S104 may start.
Also, the film forming process S104 and the processed wafer number
determining process S106 are performed on the new wafer 200 in the
processing space 201.
[0148] (Substrate Unloading Process S110)
[0149] In the substrate unloading process S110, the wafer 200 which
has been processed in the same order as in the above-described
substrate loading/unloading process S108 is withdrawn from the
process container 202 and loaded into the carry chamber. However,
unlike in the substrate loading/unloading process S108, in the
substrate unloading process S110, the loading of the next new wafer
200 which is on standby into the process container 202 is not
performed, and the wafer 200 is absent in the process container
202.
[0150] When the substrate unloading process S110 ends, the
substrate processing process enters a cleaning process.
[0151] (4) Cleaning Process
[0152] Next, a process of cleaning the inside of the process
container 202 of the substrate processing apparatus 100 as one
process of the method of manufacturing the semiconductor device
will be described with reference to FIG. 5.
[0153] (Exhaust Buffer Chamber Cleaning Process S112)
[0154] In the substrate processing apparatus 100, the film forming
process S104 is performed on a predetermined number of wafers 200
each time the substrate unloading process S110 ends, and thereafter
an exhaust buffer chamber cleaning process S112 is performed each
time the substrate processing process is put into a state where the
wafer 200 is absent in the process container 202.
[0155] When the film forming process S104 is performed on the wafer
200, an exhaust gas flows from the processing space 201 through the
communication hole 209b into the exhaust buffer chamber 209,
collides with the gas flow blocking wall 209a, and is prevented
from flowing. Thereafter, the exhaust gas temporarily stays in the
exhaust buffer chamber 209 until the exhaust gas is exhausted
through the second exhaust pipe 222 of the second gas exhaust
system. Thus, when the film forming process S104 is repetitively
performed on a predetermined number of wafers 200, reaction
byproducts or reactants generated by a reaction between the remnant
gases are easily deposited on or near the gas flow blocking wall
209a of the exhaust buffer chamber 209. For this reason, in the
substrate processing apparatus 100, the exhaust buffer chamber 209
is cleaned by performing the exhaust buffer chamber cleaning
process S112 each time the film forming process S104 is performed
on a predetermined number of wafers 200.
[0156] In the exhaust buffer chamber cleaning process S112, the
valve 249d of the exhaust buffer chamber cleaning gas supply system
249 is opened, and a cleaning gas is supplied from the exhaust
buffer chamber cleaning gas supply source 249b through the cleaning
gas supply pipe 249a into the exhaust buffer chamber 209. The
supplied cleaning gas removes deposits (reaction byproducts, etc.)
adhered to the inner wall of the exhaust buffer chamber 209.
Hereinafter, a cleaning process performed by supplying the cleaning
process from the cleaning gas supply pipe 249a into the exhaust
buffer chamber 209 will be referred to as a "first cleaning
process".
[0157] In this case, the cleaning gas supply pipe 249a is connected
to the inside of the exhaust buffer chamber 209 between the
communication hole 209b and the gas flow blocking wall 209a. Thus,
the cleaning gas is supplied into the exhaust buffer chamber 209 at
an upstream side of the gas flow blocking wall 209a in a direction
in which gases flow. Accordingly, since the cleaning gas may be
supplied near the gas flow blocking wall 209a and arrive at the gas
flow blocking wall 209a before the cleaning gas is deactivated, it
becomes possible to effectively remove deposits from the gas flow
blocking wall 209a.
[0158] When the cleaning gas supply pipe 249a is connected to the
exhaust buffer chamber 209 via the gas supply grooves 249e, the
cleaning gas is dispersed in the entire circumference along the gas
supply grooves 249e and then supplied into the exhaust buffer
chamber 209. Thus, the cleaning gas may be uniformly supplied into
the exhaust buffer chamber 209, so that deposits adhered to the
inner wall of the exhaust buffer chamber 209 may be uniformly
removed throughout the entire circumference. That is, over-etching
may be inhibited near a connection point between the exhaust buffer
chamber 209 and the cleaning gas supply pipe 249a, and generation
of a cleaning residue may be prevented at points isolated from the
connection point between the exhaust buffer chamber 209 and the
cleaning gas supply pipe 249a.
[0159] In the exhaust buffer chamber cleaning process S112, to
adjust to the supply of the cleaning gas through the cleaning gas
supply pipe 249a, the valves 243d, 244d, 246d, 247d and 248d are
put into a closed state, and the valve 245d is put into an open
state. Thus, to adjust to the supply of the cleaning gas through
the cleaning gas supply pipe 249a into the exhaust buffer chamber
209, an inert gas is supplied through the purge gas supply source
245b of the purge gas supply system 245 via the third gas supply
pipe 245a and the common gas supply pipe 242 into the processing
space 201. Also, an expression "to adjust to the supply of the
cleaning gas" may also be interpreted as "to prevent the cleaning
gas supplied into the exhaust buffer chamber 209 from intruding
into the processing space 201". Accordingly, specifically, after
the inert gas is supplied in advance, the cleaning gas is supplied.
Alternatively, the inert gas is supplied at latest simultaneously
with the cleaning gas.
[0160] In this case, the MFC 245c of the purge gas supply system
245 adjusts the amount of the inert gas supplied into the
processing space 201 so that the cleaning gas supplied into the
exhaust buffer chamber 209 may not flow into the processing space
201 through the communication hole 209b. Specifically, the supplied
amount of the inert gas is set to be larger than the supplied
amount of the cleaning gas.
[0161] Thus, the cleaning gas supplied into the exhaust buffer
chamber 209 is used only to perform the first cleaning process on
the inside of the exhaust buffer chamber 209, and becomes effective
in reliably removing deposits from the inner wall of the exhaust
buffer chamber 209. Also, the cleaning gas supplied into the
exhaust buffer chamber 209 during the exhaust buffer chamber
cleaning process S112 may be prevented from intruding into the
processing space 201. Thus, when a processing space cleaning
process S116 which will be described below is performed,
over-etching may be prevented at a point of the processing space
201 near the exhaust buffer chamber 209.
[0162] The exhaust buffer chamber cleaning process S112 ends after
the above-described first cleaning process is performed for a
predetermined time. The predetermined time is not specifically
limited as long as the predetermined time is appropriately set in
advance. Specifically, the exhaust buffer chamber cleaning process
S112 ends by closing off the valve 249d of the exhaust buffer
chamber cleaning gas supply system 249 and the valve 245d of the
purge gas supply system 245.
[0163] (Process Number of Determining Process S114)
[0164] After the above-described exhaust buffer chamber cleaning
process S112, it is determined whether the number of times the
exhaust buffer chamber cleaning process S112 was performed has
reached a predetermined number (S114).
[0165] As a result, when it is determined that the number of times
the exhaust buffer chamber cleaning process S112 was performed has
not reached the predetermined number, after a count number of the
number of times the exhaust buffer chamber cleaning process S112 is
performed is increased by one, the substrate processing process
enters into a state where a series of processes S102 to S112
starting from the substrate loading/placing process S102 may be
performed on the next new wafer 200 which is on standby. Meanwhile,
when the number of times the exhaust buffer chamber cleaning
process S112 was performed has reached the predetermined number,
the substrate processing process enters the processing space
cleaning process S116.
[0166] (Processing Space Cleaning Process S116)
[0167] In the processing space cleaning process S116, while the
valves 243d, 244d, 245d, 246d, 247d and 249d are being in a closed
state, the valve 248d is put into an open state. Thus, a cleaning
gas is supplied from the processing space cleaning gas supply
source 248b of the processing space cleaning gas supply system
through the third gas supply pipe 245a and the common gas supply
pipe 242 into the processing space 201. The supplied cleaning gas
removes adhered materials (reaction byproducts, etc.) from the
processing space 201. Hereinafter, a cleaning process performed by
supplying the cleaning gas through the processing space cleaning
gas supply system into the processing space 201 will be referred to
as a "second cleaning process".
[0168] In addition, the adhered materials in the processing space
201 are less liable to be delaminated than adhered materials in the
exhaust buffer chamber 209. The adhered materials adhered to the
inner wall of the exhaust buffer chamber 209 are unstable in terms
of a film thickness or film density because the adhered materials
are adhered under different temperature and pressure conditions
from film forming conditions. However, the adhered materials
adhered to the processing space 201 are stable in terms of a film
thickness or film density because the adhered materials are adhered
under the same temperature and pressure conditions as the film
forming conditions. Accordingly, a cleaning gas used in the second
cleaning process performed during the processing space cleaning
process S116 needs a higher cleaning power than a cleaning gas used
in the first cleaning process performed during the exhaust buffer
chamber cleaning process S112.
[0169] Accordingly, a cleaning gas supplied in the second cleaning
process performed during the processing space cleaning process S116
is more active than the first cleaning process performed during the
exhaust buffer chamber cleaning process S112. Here, the activity
refers to energy of the cleaning gas. A cleaning gas having a
higher activity and higher energy has higher cleaning power and is
more capable of cleaning and removing a denser film.
[0170] When the processing space cleaning gas supply source 248b
and the exhaust buffer chamber cleaning gas supply source 249b are
installed separately, the supply of a cleaning gas having high
energy may be embodied by supplying different types of cleaning
gases through the processing space cleaning gas supply source 248b
and the exhaust buffer chamber cleaning gas supply source 249b,
respectively. That is, a cleaning gas having a high activity and
high energy is supplied from the processing space cleaning gas
supply source 248b, while a cleaning gas having a low activity and
low energy is supplied from the exhaust buffer chamber cleaning gas
supply source 249b.
[0171] However, even if the processing space cleaning gas supply
source 248b and the exhaust buffer chamber cleaning gas supply
source 249b supply the same type of cleaning gas, the supply of a
cleaning gas having high energy may be embodied as described
below.
[0172] Specifically, for example, the heater 213 is turned on in
the second cleaning process performed during the processing space
cleaning process S116. Thus, it becomes possible to increase energy
of a cleaning gas supplied in the second cleaning process higher
than energy of a cleaning gas supplied in the first cleaning
process performed during the exhaust buffer chamber cleaning
process S112. By supplying a cleaning gas having high energy, the
second cleaning process may clean and remove a denser film than the
first cleaning process.
[0173] For example, supplementing the energy of the cleaning gas
supplied in the second cleaning process is not limited to turning
on the heater 213 and may include putting the cleaning gas supplied
in the second cleaning process into a plasma state to have higher
energy than the cleaning gas supplied in the first cleaning
process. That is, when the cleaning gas satisfies the shower head
230 and the processing space 201 in the second cleaning process,
power may be applied to the RF power source 252 and also, plasma of
the cleaning gas may be generated in the shower head 230 and the
processing space 201 by adjusting an impedance using the matcher
251. Also, in a case where the cleaning gas supplied in the first
cleaning process is put into a plasma state, the matcher 251 and
the RF power source 252 are controlled to generate plasma having
higher energy in the second cleaning process.
[0174] (Frequencies of First Cleaning Process and Second Cleaning
Process)
[0175] As described above, in the substrate processing apparatus
100, after the first cleaning process is performed only a
predetermined number of times during the exhaust buffer chamber
cleaning process S112, the second cleaning process is performed
during the processing space cleaning process S116. That is, the
controller 260 configured to control each of the processes S112 and
S116 increases frequencies at which the first cleaning process of
supplying the cleaning gas through the cleaning gas supply pipe
249a into the exhaust buffer chamber 209 and the second cleaning
process of supplying the cleaning gas through the processing space
cleaning gas supply system into the processing space 201 are
performed so that the first cleaning process may be more frequently
performed than that of the second cleaning process as described
below.
[0176] Since adhered materials adhered to the inner wall of the
exhaust buffer chamber 209 are adhered under different temperature
and pressure conditions from film forming conditions, the adhered
materials are unstable in terms of a film thickness or film
density, and easily delaminated when thermal stress or physical
stress is applied. Meanwhile, since adhered materials in the
processing space 201 are adhered under the same temperature and
pressure conditions as the film forming conditions, the adhered
materials are stable in terms of a film thickness or film density.
That is, the adhered materials adhered to the inner wall of the
exhaust buffer chamber 209 are weaker and more liable to be
delaminated than the adhered materials in the processing space 201.
Thus, it is inferred that the adhered materials adhered to the
inner wall of the exhaust buffer chamber 209 may be delaminated due
to a pressure variation for a switch of the supply of gases.
Accordingly, the controller 260 is configured to performs the first
cleaning process more frequently than the second cleaning
process.
[0177] (5) Effects of the Present Invention
[0178] According to the present embodiment, one or more effects
which will be described below may be obtained.
[0179] (a) According to the present embodiment, a cleaning gas is
directly supplied into the exhaust buffer chamber 209 having a
space surrounding an outer circumference of a side portion of the
processing space 201 using the cleaning gas supply pipe 249a which
communicates with the space of the exhaust buffer chamber 209.
Accordingly, even if unnecessary films or byproducts are adhered as
deposits to an inner wall of the exhaust buffer chamber 209, the
cleaning gas may reach the inside of the exhaust buffer chamber 209
before the cleaning gas is deactivated. Thus, the deposits may be
reliably removed. As a result, a cleaning process may be
sufficiently performed on the inside of the exhaust buffer chamber
209. Also, since the cleaning of the inside of the exhaust buffer
chamber 209 is performed during the exhaust buffer chamber cleaning
process S112, operational efficiency of an apparatus may be
prevented from being lowered unlike when an operator performs a
cleaning process by handwork during maintenance of the apparatus.
Therefore, it may be concluded that the cleaning process may be
satisfactorily performed.
[0180] In addition, according to the present embodiment, since the
cleaning gas supply pipe 249a supplies a cleaning gas into the
exhaust buffer chamber 209 through a connection point [i.e., a
somewhat upstream side of the gas flow blocking wall 209a in a
direction of gas flow] installed between the communication hole
209b and the gas flow blocking wall 209a, it becomes possible to
satisfactorily perform a cleaning process of removing deposits from
the exhaust buffer chamber 209, particularly, the gas flow blocking
wall 209a to which the deposits may be easily adhered.
[0181] That is, according to the present embodiment, even when
gases are exhausted from the processing space 201 using the exhaust
buffer chamber 209, a cleaning process may be sufficiently and
satisfactorily performed on the inside of the exhaust buffer
chamber 209.
[0182] (b) According to the present embodiment, the cleaning gas
supply pipe 249a is connected to the exhaust buffer chamber 209 at
a plurality of connection points via the gas supply grooves 249e
sequentially formed in a circumferential direction to surround the
processing space 201. Thus, the supply of a cleaning gas into the
exhaust buffer chamber 209 may be uniformized, and the supply of
the cleaning gas may be prevented from concentrating on a specific
point [e.g., near the connection point of the cleaning gas supply
pipe 249a]. Accordingly, deposits in the exhaust buffer chamber 209
may be uniformly removed throughout the entire circumference of the
exhaust buffer chamber 209.
[0183] (c) According to the present embodiment, an inert gas is
supplied from the purge gas supply source 245b of the purge gas
supply system 245 through the third gas supply pipe 245a and the
common gas supply pipe 242 into the processing space 201 to adjust
to the supply of the cleaning gas through the cleaning gas supply
pipe 249a into the exhaust buffer chamber 209. Thus, the cleaning
gas supplied into the exhaust buffer chamber 209 may be prevented
from intruding into the processing space 201 during the exhaust
buffer chamber cleaning process S112. Accordingly, even if the
cleaning gas is supplied into the exhaust buffer chamber 209, when
the processing space cleaning process S116 is performed,
over-etching may be inhibited at a point of the processing space
201 near the exhaust buffer chamber 209.
[0184] (d) According to the present embodiment, the first cleaning
process performed in the exhaust buffer chamber cleaning process
S112 and the second cleaning process performed in the processing
space cleaning process S116 are increased in a manner that the
first cleaning process may be is more frequently performed than the
second cleaning process. Accordingly, even if adhered materials
adhered to the inner wall of the exhaust buffer chamber 209 are
weaker and more liable to be delaminated than adhered materials in
the processing space 201, the adhered materials adhered to the
inside of the exhaust buffer chamber 209 may be appropriately
removed by performing the cleaning of the exhaust buffer chamber
209 more frequently. That is, even if the materials adhered to the
inner wall of the exhaust buffer chamber 209 are likely to be
easily delaminated by to a pressure variation during a switch of
the supply of gases, the adhered materials may be prevented from
intruding into the processing space 201, adversely affecting
characteristics of a film formed on the wafer 200, and causing a
reduction in yield.
[0185] (e) According to the present embodiment, a cleaning gas
supplied in the first cleaning process is less active than a
cleaning gas supplied in the second cleaning process. That is,
since materials adhered to the inner wall of the exhaust buffer
chamber 209 are weaker and more liable to be delaminated than
adhered materials in the processing space 201, energy of the
cleaning gas supplied into the exhaust buffer chamber 209 using the
first cleaning process is set to be lower than energy of the
cleaning gas supplied into the processing space 201 using the
second cleaning process. Thus, even if the cleaning gas is directly
supplied into the exhaust buffer chamber 209, over-etching may be
prevented in the exhaust buffer chamber 209.
[0186] (f) According to the present embodiment, energy of the
cleaning gas supplied in the second cleaning process may be
supplemented by turning on the heater 213 in the second cleaning
process performed during the processing space cleaning process
5116. Even if a dense film is adhered to the inside of the
processing space 201, the dense film may be reliably removed.
Other Embodiments of the Present Invention
[0187] While the embodiments of the present invention have been
described above in detail, the present invention is not limited
thereto, and various changes may be made therein without departing
from the spirit of the invention.
[0188] For example, although the previous embodiment has described
a film forming process as an example of a process performed by the
substrate processing apparatus 100, the present invention is not
limited thereto. That is, in addition to the film forming process,
the present invention may be applied to a process of forming an
oxide film or a nitride film and a process of forming a
metal-containing film. Also, irrespective of specific contents of a
substrate processing process, the present invention may be applied
to not only the film forming process but also other substrate
processing processes, such as an annealing process, an oxidation
process, a nitridation process, a lithography process, etc. Also,
the present invention may be applied to other substrate processing
apparatuses, such as an annealing processing apparatus, an
oxidation apparatus, a nitridation apparatus, an exposure
apparatus, a coating apparatus, a drying apparatus, a heating
apparatus, a processing apparatus using plasma, etc. Also, the
present invention may be applied to a mixture of the
above-described apparatuses. Furthermore, some constitutional
elements according to one exemplary embodiment may be replaced with
constitutional elements according to another exemplary embodiment,
and constitutional elements according to one exemplary embodiment
may be added to constitutional elements according to another
exemplary embodiment. Also, other constitutional elements may be
added to, deleted from, or replaced with some constitutional
elements according to each embodiment.
[0189] According to the present invention, even if a gas exhaust
process is performed using an exhaust buffer chamber, a cleaning
process can be sufficiently and satisfactorily performed on the
inside of the exhaust buffer chamber.
Exemplary Embodiments of the Present Invention
[0190] Exemplary embodiments of the present invention will be
supplementarily described below.
[0191] [Supplementary Note 1]
[0192] According to one aspect of the present invention, there is
provided a substrate processing apparatus including:
[0193] a processing space configured to process a substrate placed
on a substrate placing surface;
[0194] a gas supply system configured to supply gases into the
processing space through a side facing the substrate placing
surface;
[0195] an exhaust buffer chamber including a communication hole
communicating with the processing space at least at a side portion
of the processing space and a gas flow blocking wall extending in a
blocking direction of the gases flowing through the communication
hole;
[0196] a gas exhaust system configured to exhaust the gases
supplied into the exhaust buffer chamber; and
[0197] a cleaning gas supply pipe configured to supply a cleaning
gas into the exhaust buffer chamber through a connection point
installed between the communication hole and the gas flow blocking
wall.
[0198] [Supplementary Note 2]
[0199] The substrate processing apparatus of Supplementary note 1,
wherein the exhaust buffer chamber has a space having one sidewall
serving as the gas flow blocking wall, the communication hole is
disposed in another sidewall disposed opposite to the one sidewall
of the space of the exhaust buffer chamber, and the space of the
exhaust buffer chamber extends to surround an outer circumference
of the side portion of the processing space.
[0200] [Supplementary Note 3]
[0201] According to another aspect of the present invention, there
is provided a substrate processing apparatus including:
[0202] a processing space configured to process a substrate placed
on a substrate placing surface;
[0203] a gas supply system configured to supply gases into the
processing space through a side facing the substrate placing
surface;
[0204] an exhaust buffer chamber including a space surrounding an
outer circumference of a side portion of the processing space, the
exhaust buffer chamber configured such that the gases supplied into
the processing space flow into the space of the exhaust buffer
chamber;
[0205] a gas exhaust system configured to exhaust the gases
supplied into the exhaust buffer chamber; and
[0206] a cleaning gas supply pipe communicating with the space of
the exhaust buffer chamber and supply a cleaning gas into the
exhaust buffer chamber.
[0207] [Supplementary Note 4]
[0208] The substrate processing apparatus of Supplementary note 3,
wherein a connection point which communicates with the space of the
exhaust buffer chamber is installed in the cleaning gas supply pipe
between a communication hole serving as a gas flow path from the
processing space to the exhaust buffer chamber and a sidewall of an
outer circumferential side of the space of the exhaust buffer
chamber.
[0209] [Supplementary Note 5]
[0210] The substrate processing apparatus of any one of
Supplementary notes 1 through 4, wherein the cleaning gas supply
pipe is connected to the exhaust buffer chamber at a plurality of
the connection point or connected to the exhaust buffer chamber via
a series of gas supply grooves surrounding the processing space in
a circumferential direction.
[0211] [Supplementary Note 6]
[0212] The substrate processing apparatus of any one of
Supplementary notes 1 through 5, wherein the gas supply system
includes an inert gas supply system configured to supply an inert
gas into the processing space, and the inert gas supply system is
configured to supply the inert gas into the processing space before
the cleaning gas is supplied into the exhaust buffer chamber
through the cleaning gas supply pipe or simultaneously with the
cleaning gas.
[0213] [Supplementary Note 7]
[0214] The substrate processing apparatus of any one of
Supplementary notes 1 through 6, wherein the gas supply system
further includes a processing space cleaning gas supply system
configured to supply the cleaning gas into the processing space,
the substrate processing apparatus further including a controller
configured to control the gas supply system to perform a first
cleaning process of supplying the cleaning gas through the cleaning
gas supply pipe into the exhaust buffer chamber and a second
cleaning process of supplying the cleaning gas through the
processing space cleaning gas supply system into the processing
space.
[0215] [Supplementary Note 8]
[0216] The substrate processing apparatus of Supplementary note 7,
wherein the controller is configured to control the gas supply
system in a manner that the first cleaning process is performed
more frequently than the second cleaning process.
[0217] [Supplementary Note 9]
[0218] The substrate processing apparatus of Supplementary note 7
or Supplementary note 8, wherein the cleaning gas supplied in the
first cleaning process is less active than the cleaning gas
supplied in the second cleaning process.
[0219] [Supplementary Note 10]
[0220] The substrate processing apparatus of any one of
Supplementary notes 7 through 9, further including a heater
embedded in the substrate placing surface and serving as a heating
source, wherein the controller is configured to turn on and turn
off the heater, and the controller is configured to turn on the
heater in the second cleaning process.
[0221] [Supplementary Note 11]
[0222] According to still another aspect of the present invention,
there is provided a method of manufacturing a semiconductor device,
including:
[0223] (a) processing a substrate placed on a substrate placing
surface in a processing space by supplying gases onto the substrate
in the processing space through a side facing the substrate placing
surface while exhausting the gases from the processing space using
an exhaust buffer chamber including a space surrounding an outer
circumference of a side portion of the processing space; and
[0224] (b) cleaning and inside of the exhaust buffer chamber by
supplying a cleaning gas into the exhaust buffer chamber through a
cleaning gas supply pipe communicating with the space of the
exhaust buffer chamber.
[0225] [Supplementary Note 12]
[0226] The method of Supplementary note 11, wherein in step (b),
the inert gas is supplied into the processing space through the
side facing the substrate placing surface before the cleaning gas
is supplied into the exhaust buffer chamber through the cleaning
gas supply pipe or at latest simultaneously with the cleaning
gas.
[0227] [Supplementary Note 13]
[0228] The method of Supplementary note 11 or Supplementary note
12, further comprising: (c) cleaning the inside of the processing
space by supplying the cleaning gas into the processing space
through the side facing the substrate placing surface without the
substrate on the substrate placing surface, wherein the step (b) is
more frequently performed than the step (c).
[0229] [Supplementary Note 14]
[0230] According to yet another aspect of the present invention,
there is provided a program that causes a computer to perform
sequences of:
[0231] (a) processing a substrate placed on a substrate placing
surface in a processing space by supplying gases onto the substrate
in the processing space through a side facing the substrate placing
surface while exhausting the gases from the processing space using
an exhaust buffer chamber including a space surrounding an outer
circumference of a side portion of the processing space; and
[0232] (b) cleaning and inside of the exhaust buffer chamber by
supplying a cleaning gas into the exhaust buffer chamber through a
cleaning gas supply pipe communicating with the space of the
exhaust buffer chamber.
* * * * *