U.S. patent application number 14/658616 was filed with the patent office on 2015-09-24 for electroless plating method.
The applicant listed for this patent is Ebara Corporation. Invention is credited to Makoto Kubota, Tsutomu Nakada, Masashi Shimoyama, Akira Susaki.
Application Number | 20150267302 14/658616 |
Document ID | / |
Family ID | 54141543 |
Filed Date | 2015-09-24 |
United States Patent
Application |
20150267302 |
Kind Code |
A1 |
Kubota; Makoto ; et
al. |
September 24, 2015 |
ELECTROLESS PLATING METHOD
Abstract
An electroless plating method which can prevent stoppage of a
plating reaction and a decrease in a plating rate is disclosed.
This method includes: circulating a plating solution through a
plating bath while heating the plating solution; immersing the
substrate in the plating solution in the plating bath; forming a
first electroless plating film on the substrate while circulating
the plating solution at a first flow rate during a period from when
the substrate is immersed in the plating solution until a
predetermined time elapses; and forming a second electroless
plating film on the first electroless plating film while
circulating the plating solution at a second flow rate that is
lower than the first flow rate after the predetermined time has
elapsed.
Inventors: |
Kubota; Makoto; (Tokyo,
JP) ; Susaki; Akira; (Tokyo, JP) ; Shimoyama;
Masashi; (Tokyo, JP) ; Nakada; Tsutomu;
(Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Ebara Corporation |
Tokyo |
|
JP |
|
|
Family ID: |
54141543 |
Appl. No.: |
14/658616 |
Filed: |
March 16, 2015 |
Current U.S.
Class: |
427/304 |
Current CPC
Class: |
C23C 18/1651 20130101;
C23C 18/1619 20130101; C23C 18/1675 20130101; C23C 18/1676
20130101; C23C 18/1664 20130101; C23C 18/1834 20130101 |
International
Class: |
C23C 22/73 20060101
C23C022/73 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 19, 2014 |
JP |
2014-056713 |
Claims
1. An electroless plating method for plating a substrate,
comprising: circulating a plating solution through a plating bath
while heating the plating solution; immersing the substrate in the
plating solution in the plating bath; forming a first electroless
plating film on the substrate while circulating the plating
solution at a first flow rate during a period from when the
substrate is immersed in the plating solution until a predetermined
time elapses; and forming a second electroless plating film on the
first electroless plating film while circulating the plating
solution at a second flow rate that is lower than the first flow
rate after the predetermined time has elapsed.
2. The electroless plating method according to claim 1, wherein:
the substrate has an underlying metal and a dielectric film that
covers the underlying metal; the dielectric film has an opening
through which the underlying metal is exposed; and the first
electroless plating film is formed on an exposed surface of the
underlying metal.
3. The electroless plating method according to claim 2, wherein the
first electroless plating film is formed in the opening of the
dielectric fihn.
4. The electroless plating method according to claim 1, wherein the
predetermined time is in a range of 30 seconds to 10 minutes.
5. The electroless plating method according to claim 1, wherein the
predetermined time is not more than one-tenth of a time for forming
the second electroless plating film while circulating the plating
solution at the second flow rate.
6. The electroless plating method according to claim 1, wherein a
flow velocity of the plating solution moving on the substrate when
the plating solution is circulating at the first flow rate is in a
range of 50 cm/sec to 500 cm/sec, and a flow velocity of the
plating solution moving on the substrate when the plating solution
is circulating at the second flow rate is in a range of 0.05 cm/sec
to 200 cm/sec.
7. The electroless plating method according to claim 1, wherein a
flow velocity of the plating solution moving on the substrate when
the plating solution is circulating at the first flow rate is at
least three times a flow velocity of the plating solution moving on
the substrate when the plating solution is circulating at the
second flow rate.
8. The electroless plating method according to claim 1, further
comprising: cleaning, the substrate by immersing the substrate in a
cleaning liquid while maintaining the cleaning liquid within a
predetermined temperature range, wherein immersing the substrate in
the plating solution in the plating bath comprises immersing the
cleaned substrate in the plating solution in the plating bath, and
the predetermined temperature range is from 30.degree. C. to a
temperature higher by 10.degree. C. than a temperature of the
plating solution.
9. The electroless plating method according to claim 8, further
comprising: deaerating the cleaning liquid.
10. The electroless plating method according to claim 8, further
comprising: supplying an inert gas into the cleaning liquid.
11. An electroless plating method for plating a substrate,
comprising: supplying a heated plating solution to the substrate at
a first flow rate to form a first electroless plating film on the
substrate; and after a predetermined time has elapsed since supply
of the plating solution is started, supplying the heated plating
solution to the substrate at a second flow rate that is lower than
the first flow rate to form a second electroless plating film on
the first electroless plating film.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This document claims priority to Japanese Patent Application
Number 2014-056713 filed Mar. 19, 2014, the entire contents of
which are hereby incorporated by reference.
BACKGROUND
[0002] Electroless plating is a technique to deposit a plating film
onto a substrate, such as a wafer, by chemically reducing metal
ions in a plating solution without passing an electric current
through the plating solution. In this electroless plating, when the
substrate is immersed in the plating solution, a static reduction
reaction, such as a substitution reaction or an autocatalytic
reaction, occurs to deposit a plating film onto a surface of the
substrate.
[0003] Electroplating is a technique to deposit a plating film onto
a substrate by applying a voltage between the substrate and an
anode. In this electroplating, a voltage of not lower than a
threshold value is applied to initiate a plating reaction, and a
plating rate is controlled by controlling the voltage applied. In
electroless plating, on the other hand, the initiation of plating
reaction or the plating rate depends on a temperature and a
concentration of a plating solution. Therefore, it is important to
control the temperature and the concentration of the plating
solution. Generally, the temperature of the plating solution is set
at a temperature higher than room temperature in order to initiate
the plating reaction promptly after a substrate is immersed in the
plating solution and in order to maintain a high plating rate. If
the temperature of the plating solution significantly drops in the
course of plating, there will be stoppage of the plating reaction
or a large decrease in the plating rate. In that case, an oxide
film can be formed on the surface of the substrate or bubbles of a
reaction gas can adhere to the surface of the substrate, possibly
impeding contact of the plating solution with the substrate
surface. Consequently, the plating reaction may become unstable or
may stop even if the temperature of the plating solution is raised
again.
[0004] Electroless plating can be carried out in the following
manner. First, a substrate is pretreated by immersing the substrate
in a pretreatment solution held in a pretreatment bath (a
pretreatment process). In general, this pretreatment process is a
process of applying catalytic nuclei, which serve for deposition of
a plating film, to the surface of the substrate, or a process of
coating the substrate surface with an antioxidant film. The
substrate is then immersed in a cleaning liquid held in a cleaning
bath to remove the pretreatment solution adhering to the substrate
(a cleaning process). This cleaning process is a process of
removing the pretreatment solution from the substrate to thereby
terminate a reaction in the pretreatment process. After completion
of the cleaning process, the substrate is immersed in a plating
solution stored in a plating bath to initiate plating of the
substrate.
[0005] The cleaning liquid held in the cleaning bath is
approximately at room temperature. Therefore, the substrate that is
immersed in the cleaning liquid becomes approximately at room
temperature. On the other hand, as described above, the temperature
of the plating solution is set at a temperature higher than room
temperature. Accordingly, when the substrate at room temperature is
immersed in the plating solution, the temperature of the plating
solution drops, resulting in a decrease in the plating rate.
SUMMARY OF THE INVENTION
[0006] Embodiments, which will be described below, provide an
electroless plating method which can prevent stoppage of a plating
reaction and can prevent a decrease in the plating rate. The
embodiments relate to an electroless plating method for plating a
surface of a substrate such as a wafer.
[0007] In an embodiment, there is provided an electroless plating
method for plating a substrate, comprising: circulating a plating
solution through a plating bath while heating the plating solution;
immersing the substrate in the plating solution in the plating
bath; forming a first electroless plating film on the substrate
while circulating the plating solution at a first flow rate during
a period from when the substrate is immersed in the plating
solution until a predetermined time elapses; and forming a second
electroless plating film on the first electroless plating film
while circulating the plating solution at a second flow rate that
is lower than the first flow rate after the predetermined time has
elapsed.
[0008] In an embodiment, the substrate has an underlying metal and
a dielectric film that covers the underlying metal, the dielectric
film has an opening through which the underlying metal is exposed,
and the first electroless plating film is formed on an exposed
surface of the underlying metal.
[0009] In an embodiment, the first electroless plating film is
formed in the opening of the dielectric film.
[0010] In an embodiment, the predetermined time is in a range of 30
seconds to 10 minutes.
[0011] In an embodiment, the predetermined time is not more than
one-tenth of a time for forming the second electroless plating film
while circulating the plating solution at the second flow rate.
[0012] In an embodiment, a flow velocity of the plating solution
moving on the substrate when the plating solution is circulating at
the first flow rate is in a range of 50 cm/sec to 500 cm/sec, and a
flow velocity of the plating solution moving on the substrate when
the plating solution is circulating at the second flow rate is in a
range of 0.05 cm/sec to 200 cm/sec.
[0013] In an embodiment, a flow velocity of the plating solution
moving on the substrate when the plating solution is circulating at
the first flow rate is at least three times a flow velocity of the
plating solution moving on the substrate when the plating solution
is circulating at the second flow rate.
[0014] In an embodiment, the electroless plating method further
comprises cleaning the substrate by immersing the substrate in a
cleaning liquid while maintaining the cleaning liquid within a
predetermined temperature range, wherein immersing the substrate in
the plating solution in the plating bath comprises immersing the
cleaned substrate in the plating solution in the plating bath, and
the predetermined temperature range is from 30.degree. C. to a
temperature higher by 10.degree. C. than a temperature of the
plating solution.
[0015] In an embodiment, the electroless plating method further
comprises deaerating the cleaning liquid.
[0016] In an embodiment, the electroless plating method further
comprises supplying an inert gas into the cleaning liquid.
[0017] In an embodiment, there is provided an electroless plating
method for plating a substrate, comprising: supplying a heated
plating solution to the substrate at a first flow rate to form a
first electroless plating film on the substrate; and after a
predetermined time has elapsed since supply of the plating solution
is started, supplying the heated plating solution to the substrate
at a second flow rate that is lower than the first flow rate to
form a second electroless plating film on the first electroless
plating film.
[0018] By supplying the heated plating solution to the plating bath
or the substrate at the first flow rate that is higher than the
second flow rate, a plating solution on the substrate can be
quickly replaced with the heated plating solution. This operation
can prevent a decrease in the temperature of the plating solution
in contact with the substrate, thereby preventing stoppage of a
plating reaction and a decrease in a plating rate. Moreover, by
switching the flow rate of the plating solution from the first flow
rate to the second flow rate, a shape of a film can be prevented
from becoming non-uniform due to the flow of the plating
solution.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] FIG. 1 is a schematic view of an electroless plating
apparatus according to an embodiment;
[0020] FIG, 2 is a schematic view showing a plating-solution
heating device provided in a plating bath;
[0021] FIG. 3 is a graph illustrating timing of switching a flow
rate of a plating solution;
[0022] FIG. 4A is a diagram showing a plating film as formed when a
flow velocity of a plating solution is low;
[0023] FIG. 4B is a diagram showing a plating film as formed when
the flow velocity of the plating solution is too high;
[0024] FIG. 5 is a diagram showing an electroless plating film as
formed according to the embodiment;
[0025] FIG. 6 is a schematic view of a modified example of the
plating apparatus shown in FIG. 1;
[0026] FIG. 7 is a schematic view of the plating apparatus further
including flow control valves;
[0027] FIG. 8 is a schematic view of another modified example of
the plating apparatus shown in FIG. 1;
[0028] FIG. 9A is a schematic view of a one-by-one face-down type
plating apparatus that is designed to plate substrates one by
one;
[0029] FIG. 9B is a schematic view of a face-up type plating
apparatus;
[0030] FIG. 10 is a schematic view of an electroless plating
apparatus according to another embodiment;
[0031] FIG. 11 is a schematic view showing a heater provided in a
cleaning bath;
[0032] FIG. 12 is a schematic view of a modified example of the
plating apparatus shown in FIG. 10;
[0033] FIG. 13 is a schematic view of another modified example of
the plating apparatus shown in FIG. 10;
[0034] FIG. 14 is a schematic view of a plating apparatus including
an inert-gas supply unit;
[0035] FIG. 15 is a schematic view of yet another modified example
of the plating apparatus shown in FIG. 10;
[0036] FIG. 16 is a schematic view of the plating apparatus further
including a room-temperature bath for storing an unheated cleaning
liquid therein; and
[0037] FIG. 17 is a schematic view of the plating apparatus, which
corresponds to the modified example shown in FIG. 13, further
including a room-temperature bath.
DESCRIPTION OF EMBODIMENTS
[0038] Embodiments will now be described with reference to the
drawings. The same reference numerals are used in FIGS. 1 through
17 to refer to the same or corresponding elements, components,
etc., and duplicate descriptions thereof will be omitted. FIG. 1 is
a schematic view of an electroless plating apparatus according to
an embodiment. The electroless plating apparatus of this embodiment
is a batch processing-type plating apparatus capable of processing
multiple substrates at a time. However, the electroless plating
apparatus may be a one-by-one processing-type plating apparatus
which processes substrates in a one-by-one manner. The electroless
plating apparatus will be hereinafter simply referred to as plating
apparatus.
[0039] As shown in FIG. 1, the plating apparatus of this embodiment
includes a plating bath 1 for storing a plating solution therein, a
plating-solution heating device 3 for heating the plating solution,
and a circulation unit 2 for creating a flow of the plating
solution in the plating bath 1. Multiple substrates W are disposed
in a vertical position in the plating bath 1 and arranged parallel
to each other.
[0040] The circulation unit 2 is configured to be capable of
switching a flow rate of the plating solution, flowing into the
plating bath 1, between a first flow rate and a second flow rate
that is lower than the first flow rate. More specifically, the
circulation unit 2 includes a plating-solution circulation line 5
coupled to the plating bath 1, a pump 6 for circulating the plating
solution through the plating bath 1 and the plating-solution
circulation line 5, and a pump controller 7 for switching a
rotational speed of the pump 6 between a first rotational speed to
achieve the first flow rate and a second rotational speed to
achieve the second flow rate.
[0041] One end of the plating-solution circulation line 5 is
coupled to an upper portion of the plating bath 1, and the other
end of the plating-solution circulation line 5 is coupled to a
bottom of the plating bath 1. The plating solution is delivered
from the upper portion of the plating bath 1 through the
plating-solution circulation line 5 to the bottom of the plating
bath 1. The plating solution flows from the plating-solution
circulation line 5 into the bottom of the plating bath 1 to form an
upward flow in the plating bath 1. The upward flow of the plating
solution moves on surfaces of the substrates W. Thus, the plating
solution, which has been heated by the plating-solution heating
device 3, flows into the plating bath 1, and the plating solution
in the plating bath 1 is agitated gently, whereby the plating
solution at a uniform temperature spreads throughout the plating
bath 1.
[0042] Although not shown in the drawings, the plating bath 1 may
be composed of a plating-solution storage bath where the substrates
W are to be immersed in the plating solution, and an overflow bath
located adjacent to the plating-solution storage bath. In that
case, one end of the plating-solution circulation line 5 is coupled
to the overflow bath, while the other end of the plating-solution
circulation line 5 is coupled to the bottom of the plating-solution
storage bath. The plating solution overflows the plating-solution
storage bath into the overflow bath. The plating solution that has
flowed into the overflow bath is returned to the plating-solution
storage bath through the plating-solution circulation line 5.
[0043] The plating-solution heating device 3 is mounted to the
plating-solution circulation line 5 and is configured to heat the
plating solution that is circulating through the plating bath 1 and
the plating-solution circulation line 5. As shown in FIG. 2, the
plating-solution heating device 3 may be provided in the plating
bath 1. Such a construction can also heat the plating solution in
the plating bath 1. The plating-solution circulation line 5 is also
provided with a filter 9 for removing unwanted materials from the
plating solution, and a flow meter 8 for measuring the flow rate of
the plating solution. The flow meter 8 and the filter 9 are located
downstream of the pump 6, while the plating-solution heating device
3 is located upstream of the pump 6. When the pump 6 is in
operation, the plating solution circulates through the plating bath
1, the plating-solution heating device 3, and the plating-solution
circulation line 5. A temperature measuring device 60 is installed
in the plating bath 1 in order to measure the temperature of the
plating solution in the plating bath 1. The temperature measuring
device 60 is coupled to the plating-solution heating device 3, and
the plating-solution heating device 3 is on-off controlled so as to
keep the temperature of the plating solution within a predetermined
management range.
[0044] The pump controller 7 is coupled to the pump 6. The pump 6
is configured to change the flow rate of the plating solution
flowing into the plating bath 1 in accordance with a command from
the pump controller 7. The rotational speed of the pump 6 is
controlled by the pump controller 7. This pump controller 7 is
configured to switch the rotational speed of the pump 6 between a
first rotational speed to achieve the first flow rate and a second
rotational speed to achieve the second flow rate.
[0045] FIG. 3 is a graph illustrating timing of switching the flow
rate of the plating solution. In FIG. 3, vertical axis represents
the flow rate of the plating solution flowing into the plating bath
1, i.e. the flow rate of the plating solution circulating through
the plating-solution circulation line 5, and horizontal axis
represents time. When the substrates W begin to be immersed in the
plating solution, the pump 6 receives a command from the pump
controller 7 to rotate at the first rotational speed. Accordingly,
the plating solution is supplied to the plating bath 1 at the first
flow rate. After a predetermined time has elapsed since the
substrates W were immersed in the plating solution, the pump 6
receives a command from the pump controller 7 to rotate at the
second rotational speed. Accordingly, the plating solution is
supplied to the plating bath 1 at the second flow rate. Although
the predetermined time may vary depending on various plating
conditions, the predetermined time is preferably set in a range of
30 seconds to 10 minutes (e.g., 5 minutes). The total plating time
is, for example, 30 minutes to 90 minutes.
[0046] A flow velocity [m/min] of the plating solution moving on
the substrates W can be approximately calculated by dividing the
flow rate [m.sup.3/min] of the plating solution, which is measured
by the flow meter 8 (see FIG. 1), by a horizontal cross-sectional
area [m.sup.2] of the plating bath 1.
[0047] Plating of a substrate W may be carried out in the following
manner. The following description illustrates a case where aluminum
is used as an underlying metal of the substrate W, and a nickel
plating solution is used as the plating solution. First, the
substrate W is cleaned with an aqueous solution of nitric acid (an
acid cleaning process). After the acid cleaning process, the
substrate W is cleaned with pure water. Thereafter, aluminum oxide
formed on the surface of the substrate W is removed with a zincate
solution, so that the surface of the substrate W is coated with
zinc (a zincate treatment). This zinc that is formed on the surface
of the substrate W functions as an antioxidant film. The acid
cleaning process and the zincate treatment are referred to as
pretreatment process.
[0048] Next, the substrate W is transported by a not-shown
transport mechanism to the cleaning bath 10 shown in FIG. 1, and is
immersed in a cleaning liquid in the cleaning bath 10. The cleaning
bath 10 is a storage bath that stores the cleaning liquid therein
for cleaning the substrate W before plating of the substrate W.
This process of cleaning the substrate W with the cleaning liquid
is referred to as a cleaning process. The substrate W is then
transported by the transport mechanism to the plating bath 1, and
is immersed in the plating solution held in the plating bath 1.
[0049] In general, a temperature of the cleaning liquid in the
cleaning bath 10 is approximately equal to room temperature.
Therefore, the substrate W, when immersed in the cleaning liquid in
the cleaning bath 10, becomes approximately at room temperature. On
the other hand, the temperature of the plating solution is higher
than room temperature. Accordingly, when the substrate .W at room
temperature is immersed in the plating solution, the temperature of
the plating solution drops. In order to prevent this, the
circulation unit 2 supplies the plating solution to the plating
bath 1 at the first flow rate during a period from when the
substrate W is immersed in the plating solution until a
predetermined time elapses. Because the plating solution flows into
the plating bath 1 at the relatively high flow rate, the plating
solution around the substrate W and the entirety of the plating
solution in the plating bath 1 can be quickly replaced with the
heated plating solution. This operation can prevent a decrease in
the temperature of the plating solution that is in contact with the
substrate W, thereby preventing stoppage of a plating reaction and
a decrease in the plating rate. When the plating solution is
supplied to the plating bath 1 at the first flow rate, the first
flow velocity of the plating solution moving on the substrate W is
in a range of for example, 50 to 500 [cm/sec].
[0050] After the predetermined time has elapsed since the substrate
W was immersed in the plating solution, the circulation unit 2
supplies the plating solution to the plating bath 1 at the second
flow rate that is lower than the first flow rate. After a
predetermined plating time has elapsed, the substrate W is raised
from the plating solution, so that plating of the substrate W is
terminated. When the plating solution is supplied to the plating
bath 1 at the second flow rate, the second flow velocity of the
plating solution moving on the substrate W is in a range of, for
example, 0.05 to 200 [cm/sec].
[0051] In particular, it is desirable that the flow velocity of the
plating solution moving on the substrate W when the plating
solution is circulating at the first flow rate be at least three
times the flow velocity of the plating solution moving on the
substrate W when the plating solution is circulating at the second
flow rate.
[0052] In electroless plating, the flow velocity of the plating
solution in contact with the substrate W is preferably low. FIG. 4A
is a diagram showing a plating film as formed on the substrate W
when the flow velocity of the plating solution is low, and FIG. 4B
is a diagram showing a plating film as formed on the substrate W
when the flow velocity of the plating solution is too high. As
shown in FIGS. 4A and 4B, the substrate W has underlying metals
(metal pads) 19. A dielectric film 20, which may be composed of a
photoresist or silicon nitride (SiN), is formed so as to cover the
underlying metals 19. The dielectric film 20 has openings 21
through which the underlying metals 19 are exposed. Exposed
surfaces of the underlying metals 19 are formed in these openings
21. Electroless plating films 70 are formed on the exposed surfaces
of the underlying metals 19.
[0053] As shown in FIG. 4A, when the flow velocity of the plating
solution is low, the plating films 70 are deposited isotropically
and the plating films 70 are formed in a normal shape. In contrast,
when the flow velocity of the plating solution is too high, an
additive, which suppresses deposition of the plating films 70,
concentrates on a part of each plating film 70, thereby causing the
plating film 70 to have a non-uniform shape, called "chipped", as
shown in FIG. 4B. Moreover, a turbulent flow of the plating
solution may be produced around an edge of the substrate W,
resulting in deformation of the plating films 70 or non-uniformity
of thickness of the plating films 70.
[0054] The second flow rate to be selected is such that the flow of
the plating solution does not lead to such non-uniform shape of the
plating films 70 while the temperature of the plating solution on
the surface of the substrate W in the plating bath 1 can be kept
uniform. If the flow rate of the plating solution flowing into the
plating bath 1 is too low, the temperature of the plating solution
may differ e.g., between an upper region and a lower region in the
plating bath 1, resulting in non-uniform thickness of the plating
films 70 over the substrate surface.
[0055] If the substrate W is immersed in the plating solution held
in the plating bath 1 when the plating solution is circulating at
the second flow rate, the temperature of the plating solution may
decrease and the plating reaction may not be initiated. Even if the
temperature of the plating solution gradually increases and the
plating reaction starts, there may be a variation in the
temperature of the plating solution in the plating bath 1, which
may cause non-uniform thickness of the plating films 70 over the
surface of the substrate W.
[0056] In this embodiment, therefore, the plating solution is
circulated at the first flow rate at least during the period from
when the substrate W is immersed in the plating solution in the
plating bath 1 (in this embodiment from a time when a lower end of
the substrate W is brought into contact with the plating solution)
until the predetermined time elapses. The circulation of the
plating solution at the first flow rate may be started before the
substrate W is immersed in the plating solution held in the plating
bath 1. Even if the temperature of the plating solution temporarily
drops as a result of the immersion of the substrate W, the plating
solution in the plating bath 1 is replaced with the
high-temperature plating solution in a short time, because the
plating solution is circulating at the relatively high flow rate.
Therefore, the plating reaction starts promptly after the substrate
W is immersed in the plating solution in the plating bath 1.
Further, plating films 70 having a uniform thickness can be formed.
Because a circulation time of the plating solution at the first
flow rate is short relative to a total plating time, the high flow
rate of the plating solution at an initial stage of plating has a
relatively small influence on a final shape of the plating films
70.
[0057] FIG. 5 is a diagram showing an electroless plating film as
formed according to this embodiment. First, electroless plating
films (first electroless plating films) 71 are formed on the
exposed surfaces of the underlying metals 19, while the plating
solution is flowing on a substrate W at the first flow velocity.
The electroless plating films 71 are formed in the openings 21.
Therefore, in spite of the high flow velocity, the flow of the
plating solution hardly affects the shape of the plating film.
Furthermore, because plating with the first flow velocity is
performed only for a short initial period in a total plating time,
the high flow velocity has a little influence on the final shape of
the plating film. After the formation of the first electroless
plating films 71, electroless plating films (second electroless
plating films) 72 are formed on the first electroless plating films
71, respectively, while the plating solution is flowing on the
substrate W at the second flow velocity. The second electroless
plating films 72 may project upwardly from the surface of the
dielectric film 20 as shown in FIG. 5, or may be formed only within
the openings 21 of the dielectric film 20.
[0058] It is desirable that the time for forming the first
electroless plating film while circulating the plating solution at
the first flow rate be not more than one-tenth ( 1/10) of the time
for forming the second electroless plating film while circulating
the plating solution at the second flow rate.
[0059] Besides nickel, examples of the metal of a plating film as
formed by electroless plating according to this embodiment may
include cobalt, copper, gold, and an alloy thereof.
[0060] FIG. 6 is a schematic view of a modified example of the
plating apparatus shown in FIG. 1. Those constructional features of
this plating apparatus, which will not be described below, are the
same as those of the above-described plating apparatus shown in
FIG. 1. As shown in FIG. 6, the circulation unit 2 includes a first
pump 11 and a second pump 12 for circulating a plating solution
through the plating bath 1 and the plating-solution circulation
line 5, and a first valve 15 and a second valve 16 attached to the
plating-solution circulation line 5. Part of the plating-solution
circulation line 5 is constituted by a first delivery line 13 and a
second delivery line 14 that extend parallel to each other. The
entirety of the plating-solution circulation line 5 may be
constituted by the first delivery line 13 and the second delivery
line 14. The first pump 11 and the first valve 15 are mounted to
the first delivery line 13. The second pump 12 and the second valve
16 are mounted to the second delivery line 14. The first valve 15
and the second valve 16 are located downstream of the first pump 11
and the second pump 12, respectively.
[0061] A pump controller 7 is coupled to the first pump 11, the
second pump 12, the first valve 15, and the second valve 16, and
controls the operations of the first pump 11, the second pump 12,
the first valve 15, and the second valve 16. The first valve 15 and
the second valve 16 are configured to open and close fluid passages
of the first delivery line 13 and the second delivery line 14,
respectively, upon receiving commands from the pump controller
7.
[0062] The first pump 11 is a high-speed pump for delivering the
plating solution at a high flow rate, while the second pump 12 is a
low-speed pump for delivering the plating solution at a low flow
rate. Thus, the first pump 11 is configured to deliver the plating
solution through the first delivery line 13 at a predetermined
first flow rate, while the second pump 12 is configured to deliver
the plating solution through the second delivery line 14 at a
predetermined second flow rate that is lower than the predetermined
first flow rate. The first flow rate is such a flow rate as to
allow the plating solution in the plating bath 1 to flow on a
substrate W at the first flow velocity when the second valve 16 is
closed, while the second flow rate is such a flow rate as to allow
the plating solution in the plating bath 1 to flow on the substrate
W at the second flow velocity when the first valve 15 is
closed.
[0063] The plating-solution heating device 3 is attached to the
plating-solution circulation line 5. When the first pump 11 and/or
the second pump 12 is in operation, the plating solution circulates
through the plating bath 1, the plating-solution heating device 3,
and the plating-solution circulation line 5.
[0064] The pump controller 7 closes the second valve 16 and opens
the first valve 15, and causes the first pump 11 to operate during
the period from when the substrate W is immersed in the plating
solution until a predetermined time elapses. The plating solution
is delivered by the first pump 11 through the first delivery line
13 at the first flow rate. As a result, a flow of the plating
solution, moving on the substrate W at the first flow velocity, is
created in the plating bath 1. After the predetermined time has
elapsed, the pump controller 7 closes the first valve 15, opens the
second valve 16, stops the operation of the first pump 11, and
causes the second pump 12 to operate. The plating solution is
delivered by the second pump 12 through the second delivery line 14
at the second flow rate. As a result, a flow of the plating
solution, moving on the substrate W at the second flow velocity, is
created in the plating bath 1.
[0065] FIG. 7 is a schematic view of the plating apparatus further
including flow control valves 17, 18. Those constructional features
of this plating apparatus, which will not be described below, are
the same as those of the above-described plating apparatus shown in
FIG. 6. As shown in FIG. 7, a first flow control valve 17 may be
attached to the first delivery line 13, and a second flow control
valve 18 may be attached to the second delivery line 14. The first
flow control valve 17 is configured to regulate the flow rate of
the plating solution flowing in the first delivery line 13, and the
second flow control valve 18 is configured to regulate the flow
rate of the plating solution flowing in the second delivery line
14. The operations of the first flow control valve 17 and the
second flow control valve 18 are controlled by the pump controller
7.
[0066] FIG. 8 is a schematic view of another modified example of
the plating apparatus shown in FIG. 1. Those constructional
features of this plating apparatus, which will not be described
below, are the same as those of the above-described plating
apparatus shown in FIG. 1. As shown in FIG. 8, part of the
plating-solution circulation line 5 is constituted by a delivery
line 27 and a return line 23 that extend parallel to each other.
The circulation unit 2 includes a pump 25 attached to the delivery
line 27, and a flow control valve 24 for regulating a flow rate of
the plating solution flowing backward through the return line 23.
The flow control valve 24 is attached to the return line 23.
[0067] The flow control valve 24 is coupled to the pump controller
7, so that the operation of the flow control valve 24 is controlled
by the pump controller 7. After the operation of the pump 25 is
started, most of the plating solution is returned to the plating
bath 1, while part of the plating solution flows into the return
line 23, as shown by the arrows in FIG. 8. The flow control valve
24 is configured to change the flow rate of the plating solution
flowing backward through the return line 23, thereby switching the
flow velocity of the plating solution, flowing on a substrate W,
between the first flow velocity and the second flow velocity.
[0068] The flow rate of the plating solution, returned to the
plating bath 1, increases when the flow control valve 24 decreases
the flow rate of the plating solution flowing through the return
line 23. As a result, a flow of the plating solution, moving on the
substrate W at the first flow velocity that is higher than the
second flow velocity, is created in the plating bath 1. The flow
rate of the plating solution, returned to the plating bath 1,
decreases when the flow control valve 24 increases the flow rate of
the plating solution flowing through the return line 23. As a
result, a flow of the plating solution, moving on the substrate W
at the second flow velocity that is lower than the first flow
velocity, is created in the plating bath 1.
[0069] The plating-solution heating device 3 is attached to the
plating-solution circulation line 5. When the pump 25 is in
operation, the plating solution circulates through the plating bath
1, the plating-solution heating device 3, and the plating-solution
circulation line 5. As with the plating apparatus shown in FIG. 2,
the plating-solution heating device 3 may be provided in the
plating bath 1.
[0070] In the above-described embodiments the flow velocity of the
plating solution moving on a substrate W is switched between the
first flow velocity and the second flow velocity, while it is also
possible to switch the flow velocity of the plating solution
between three or more different flow velocities.
[0071] While the embodiments have been described with reference to
the plating apparatus in which plating operations for substrates W
are performed repeatedly with the plating solution circulating
through the plating bath 1, the present invention is also
applicable to a plating apparatus of a type that discards a plating
solution each time plating of one substrate or one batch of
substrates is completed. FIG. 9A is a schematic view of a
one-by-one face-down type plating apparatus, and FIG. 9B is a
schematic view of a face-up type plating apparatus. The face-down
type plating apparatus has a substrate holder 28 that holds a
substrate W in a horizontal position with its front surface facing
downward. This face-down type plating apparatus is configured to
immerse the substrate W in a plating solution held in a plating
bath 1 and supply the plating solution upwardly from a bottom of
the plating bath 1 while rotating the substrate holder 28 together
with the substrate W to thereby plate the substrate W.
[0072] The face-up type plating apparatus has a substrate holder 29
that holds a substrate W in a horizontal position with its front
surface facing upwardly. This face-up type plating apparatus is
configured to supply a plating solution onto a surface of the
substrate W from above while rotating the substrate holder 29
together with the substrate W to thereby plate the substrate W.
These types of plating apparatuses can also achieve the same
effects as described above by supplying a heated plating solution
to the surface of the substrate W at a relatively high flow rate
(first flow rate) and, after a predetermined time has elapsed since
the supply of the plating solution is started, supplying the
plating solution to the surface of the substrate W at a relatively
low flow rate (second flow rate).
[0073] FIG. 10 is a schematic view of an electroless plating
apparatus according to another embodiment. As shown in FIG. 10, the
plating apparatus includes a cleaning bath 10 for storing a
cleaning liquid for cleaning a substrate W before plating of the
substrate W, and a cleaning-liquid heating device 30 for
maintaining the cleaning liquid in the cleaning bath 10 within a
predetermined temperature range. The cleaning-liquid heating device
30 includes a heater 33 for heating the cleaning liquid, and a
heated-cleaning-liquid supply line 31 for supplying the heated
cleaning liquid into the cleaning bath 10. The temperature of the
cleaning liquid in the cleaning bath 10 is measured by a
temperature measuring device 80. This temperature measuring device
80 is coupled to the heater 33, and the operation of the heater 33
is controlled so as to keep the temperature of the cleaning liquid
within the predetermined temperature range.
[0074] One end of the heated-cleaning-liquid supply line 31 is
coupled to a lower portion of the cleaning bath 10, while the other
end of the heated-cleaning-liquid supply line 31 is coupled to a
not-shown cleaning liquid supply source. The heated-cleaning-liquid
supply line 31 is provided with an on-off valve 32 for opening and
closing a fluid passage of the heated-cleaning-liquid supply line
31, and a heater 33. The plating apparatus further includes an
operation controller 46 for controlling operation of supplying the
heated cleaning liquid into the cleaning bath 10. This operation
controller 46 is coupled to the on-off valve 32, and is configured
to control the opening and closing operations of the on-off valve
32.
[0075] As described above, when the substrate W is immersed in the
cleaning liquid whose temperature is approximately equal to room
temperature, the substrate W becomes approximately at room
temperature. On the other hand, the temperature of the plating
solution is higher than room temperature. Accordingly, when the
substrate W at room temperature is immersed in the plating
solution, the temperature of the plating solution drops.
[0076] Thus, in order to make the temperature of the substrate W
higher than room temperature, the cleaning-liquid heating device 30
supplies the cleaning liquid that has been heated by the heater 33
to the cleaning bath 10 through the heated-cleaning-liquid supply
line 31. When the on-off valve 32 is opened, the heated cleaning
liquid is supplied to the cleaning bath 10. The substrate W is
immersed in the heated cleaning liquid in the cleaning bath 10; so
that the substrate W is cleaned and heated. After the cleaning of
the substrate W, the heated substrate W is transported to the
plating bath 1, where the substrate W is immersed in the plating
solution, so that the substrate W is plated. The cleaning operation
in this embodiment can reduce a difference in temperature between
the substrate W and the plating solution, thereby preventing a
decrease in the temperature of the plating solution. As shown in
FIG. 11, the heater 33 may be provided in the cleaning bath 10.
[0077] The temperature range of the cleaning liquid is preferably
from 30.degree. C. to a temperature higher by 10.degree. C. than
the temperature of the plating solution. For example, when the
temperature of the plating solution is 50.degree. C., the
temperature of the heated cleaning liquid is not less than
30.degree. C. and nor more than 60.degree. C.
[0078] FIG. 12 is a schematic view of a modified example of the
plating apparatus shown in FIG. 10. Those constructional features
of this plating apparatus, which will not be described below, are
the same as those of the above-described plating apparatus shown in
FIG. 10. As shown in FIG. 12, the plating apparatus includes a
deaerator 38 for deaerating a cleaning liquid, a cleaning-liquid
circulation line 36 coupling cleaning bath 10 to the deaerator 38,
a pump 37 for circulating the cleaning liquid between the cleaning
bath 10 and the deaerator 38 through the cleaning-liquid
circulation line 36, and a filter 39 for removing unwanted
materials from the cleaning liquid flowing through the
cleaning-liquid circulation line 36. One end of the cleaning-liquid
circulation line 36 is coupled to an upper portion of the cleaning
bath 10, while the other end of the cleaning-liquid circulation
line 36 is coupled to a bottom of the cleaning bath 10.
[0079] When a substrate W is immersed in the cleaning liquid held
in the cleaning bath 10, oxygen contained in the cleaning liquid
may accelerate oxidization of the underlying metal of the substrate
W. The deaerator 38 is provided in order to remove oxygen from the
cleaning liquid. Because the cleaning liquid supplied into the
cleaning bath 10 is deaerated by the deaerator 38, oxidation of the
substrate W can be prevented.
[0080] FIG. 13 is a schematic view of another modified example of
the plating apparatus shown in FIG. 10. Those constructional
features of this plating apparatus, which will not be described
below, are the same as those of the above-described plating
apparatus shown in FIG. 10. As shown in FIG. 13, heater 33 may be
attached to the cleaning-liquid circulation line 36. In this
embodiment, the plating apparatus is not provided with the
heated-cleaning-liquid supply line 31 and the on-off valve 32,
shown in FIG. 10. The cleaning-liquid circulation line 36 couples
the cleaning bath 10 to the heater 33, which is configured to heat
a cleaning liquid flowing through the cleaning-liquid circulation
line 36. The heater 33 may be provided in the cleaning bath 10. The
heater 33 in the plating bath 10 can also heat the plating solution
held in the plating bath 10.
[0081] An unheated-cleaning-liquid supply line 42 for supplying an
unheated cleaning liquid into the cleaning bath 10 is coupled to
the cleaning bath 10. A supply valve 44 is attached to the
unheated-cleaning-liquid supply line 42. This supply valve 44 is
configured to open and close a fluid passage of the
unheated-cleaning-liquid supply line 42. The opening and closing
operations of the supply valve 44 are controlled by operation
controller 46. The unheated cleaning liquid is a cleaning liquid
that is not heated by a heating device, such as a heater.
[0082] As shown in FIG. 14, the plating apparatus may include an
inert-gas supply unit 40 for supplying an inert gas, such as
nitrogen gas, into cleaning liquid. Those constructional features
of this plating apparatus, which will not be described below, are
the same as those of the above-described plating apparatus shown in
FIG. 10. The inert-gas supply unit 40 includes a diffuser tube 47
disposed at the bottom of the cleaning bath 10, and an inert-gas
supply line 48 for supplying the inert gas into the diffuser tube
47. When the inert gas is supplied into the cleaning liquid,
bubbles of the inert gas are formed in the cleaning liquid to
remove the dissolved oxygen from the cleaning liquid. Accordingly,
oxidization of a substrate W can be prevented.
[0083] FIG. 15 is a schematic view of yet another modified example
of the plating apparatus shown in FIG. 10. Those constructional
features of this plating apparatus, which will not be described
below, are the same as those of the above-described plating
apparatus shown in FIG. 10. As shown in FIG. 15, the plating
apparatus includes unheated-cleaning-liquid supply line 42 for
supplying unheated cleaning liquid into the cleaning bath 10, a
drain line 41 for draining the unheated cleaning liquid from the
cleaning bath 10, and a drain valve 43 attached to the drain line
41. The drain valve 43 is configured to open and close a fluid
passage of the drain line 41. Supply valve 44 is attached to the
unheated-cleaning-liquid supply line 42. The drain line 41 is
coupled to the bottom of the cleaning bath 10.
[0084] The plating apparatus further includes operation controller
46 for controlling the operation of supplying the cleaning liquid
into the cleaning bath 10 and the operation of draining the
cleaning liquid from the cleaning bath 10. The operation controller
46 is configured to control the opening and closing operations of
the on-off valve 32, the drain valve 43, and the supply valve
44.
[0085] Opening and closing operations of the on-off valve 32, the
drain valve 43, and the supply valve 44 will now be described.
First, the on-off valve 32 and the drain valve 43 are closed and
the supply valve 44 is opened to allow the unheated cleaning liquid
to be supplied into the cleaning bath 10 through the
unheated-cleaning-liquid supply line 42. The supply valve 44 is
closed when the cleaning bath 10 is filled with the unheated
cleaning liquid. A substrate W is transported by a not-shown
transport mechanism to a predetermined position in the cleaning
bath 10 and immersed in the unheated cleaning liquid, whereby the
substrate W is cleaned.
[0086] After the cleaning of the substrate W, the drain valve 43 is
opened to drain the unheated cleaning liquid from the cleaning bath
10. After draining the unheated cleaning liquid, the drain valve 43
is closed and the on-off valve 32 is opened to allow a heated
cleaning liquid to be supplied through the heated-cleaning-liquid
supply line 31 into the cleaning bath 10. The on-off valve 32 is
closed when the cleaning bath 10 is filled with the heated cleaning
liquid. The substrate W is immersed in the heated cleaning liquid,
whereby the substrate W is cleaned and heated. The heated substrate
W is transported by transport mechanism to the plating bath 1. The
substrate W is immersed in a plating solution in the plating bath 1
so that plating of the substrate W is started. After a
predetermined plating time has elapsed, the substrate W is raised
from the plating solution, whereby plating of the substrate W is
terminated.
[0087] FIG. 16 is a schematic view of the plating apparatus further
including a room-temperature bath 50 for storing an unheated
cleaning liquid. As shown in FIG. 16, an unheated-cleaning-liquid
introduction line 52 for introducing an unheated cleaning liquid
into the room-temperature bath 50 is coupled to the
room-temperature bath 50. An introduction valve 53 for opening and
closing a fluid passage of the unheated-cleaning-liquid
introduction line 52 is attached to the unheated-cleaning-liquid
introduction line 52. Operation controller 46 is coupled to the
introduction valve 53, so that the opening and closing operations
of the introduction valve 53 are controlled by the operation
controller 46.
[0088] When the introduction valve 53 is opened, the unheated
cleaning liquid is introduced through the unheated-cleaning-liquid
introduction line 52 into the room-temperature bath 50. A substrate
W is immersed in the unheated cleaning liquid held in the
room-temperature bath 50, so that the substrate W is cleaned. A
heated cleaning liquid is supplied through the
heated-cleaning-liquid supply line 31 into the cleaning bath 10
until the cleaning bath 10 is filled with the heated cleaning
liquid. The substrate W is transported from the room-temperature
bath 50 to the cleaning bath 10, where the substrate W is immersed
in the heated cleaning liquid. The substrate W is cleaned and
heated by the heated cleaning liquid. The heated substrate W is
transported by a transport mechanism to the plating bath 1. The
substrate W is immersed in a plating solution in the plating bath
1, so that plating of the substrate W is started. After a
predetermined plating time has elapsed, the substrate W is raised
from the plating solution, whereby plating of the substrate W is
terminated.
[0089] FIG. 17 is a schematic view of the plating apparatus, which
corresponds to the modified example shown in FIG. 13, further
including the room-temperature bath 50. Also in this plating
apparatus, a substrate W is first cleaned with the unheated
cleaning liquid in the room-temperature bath 50, and is
subsequently cleaned and heated by the heated cleaning liquid held
in the cleaning bath 10.
[0090] One of the above-described embodiments of the plating
apparatuses may be combined with the other. For example, the
cleaning bath 10 shown in FIG. 10 may be employed in the plating
apparatus shown in FIG. 1. Further, the cleaning bath 10 and the
room-temperature bath 50, shown in FIG. 16, may be employed in the
plating apparatus shown in FIG. 1.
[0091] While the present invention has been described with
reference to preferred embodiments, it is understood that the
present invention is not limited to the embodiments described
above, and is capable of various changes and modifications within
the scope of the technical concept as expressed herein.
* * * * *