U.S. patent application number 14/566470 was filed with the patent office on 2015-04-09 for substrate with built-in electronic component.
This patent application is currently assigned to TAIYO YUDEN CO., LTD.. The applicant listed for this patent is TAIYO YUDEN CO., LTD.. Invention is credited to Masaki NAGANUMA, Hiroshi NAKAMURA, Tetsuo SAJI, Tatsuro SAWATARI, Yuichi SUGIYAMA.
Application Number | 20150098203 14/566470 |
Document ID | / |
Family ID | 50112391 |
Filed Date | 2015-04-09 |
United States Patent
Application |
20150098203 |
Kind Code |
A1 |
SAWATARI; Tatsuro ; et
al. |
April 9, 2015 |
SUBSTRATE WITH BUILT-IN ELECTRONIC COMPONENT
Abstract
In a first conductive layer and a third conductive layer that
are respectively closest to a core layer having a storage portion
that penetrates therethrough, four first penetrating holes and four
first penetrating holes are formed so as to overlap part of an
opening edge of the storage portion that is projected onto the
first conductive layer and the third conductive layer,
respectively.
Inventors: |
SAWATARI; Tatsuro; (Tokyo,
JP) ; SUGIYAMA; Yuichi; (Tokyo, JP) ;
NAKAMURA; Hiroshi; (Tokyo, JP) ; NAGANUMA;
Masaki; (Tokyo, JP) ; SAJI; Tetsuo; (Tokyo,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TAIYO YUDEN CO., LTD. |
Tokyo |
|
JP |
|
|
Assignee: |
TAIYO YUDEN CO., LTD.
Tokyo
JP
|
Family ID: |
50112391 |
Appl. No.: |
14/566470 |
Filed: |
December 10, 2014 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13909880 |
Jun 4, 2013 |
8923009 |
|
|
14566470 |
|
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Current U.S.
Class: |
361/762 |
Current CPC
Class: |
H05K 1/0213 20130101;
H05K 1/185 20130101; H05K 2201/09063 20130101; H05K 1/0271
20130101; H05K 1/0298 20130101; H05K 2203/1178 20130101 |
Class at
Publication: |
361/762 |
International
Class: |
H05K 1/18 20060101
H05K001/18; H05K 1/02 20060101 H05K001/02 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 9, 2012 |
JP |
2012-247417 |
Claims
1. A substrate with built-in electronic component, comprising; a
core layer having a storage portion penetrating the core layer; an
electronic component stored in the storage portion; a synthetic
resin filler filling a space between the electronic component and
inner walls of the storage portion, the synthetic resin filler
having a higher moisture absorbency than that of the core layer;
and two or more pairs of an insulating layer and a conductive layer
disposed on two opposite surfaces of the core layer in a thickness
direction, the insulating layers being made of a synthetic resin,
the conductive layers being made of a metal, wherein, of the two or
more pairs of the insulating layer and the conductive layer
disposed on at least one of two opposite surfaces of the core layer
in a thickness direction, a conductive layer closest to the core
layer has at least one first penetrating hole formed therein so as
to overlap at least part of an opening edge of the storage portion
in a plan view, and wherein, of the two or more pairs of the
insulating layer and the conductive layer, a conductive layer other
than the conductive layer closest to the core layer has at least
one second penetrating hole formed therein so as to be close to, at
a distance of 0.01 mm to 1.0 mm, but not to overlap, the first
penetrating hole in a plan view.
2. The substrate with built-in electronic component according to
claim 1, wherein a shape of the second penetrating hole differs
from a shape of the first penetrating hole in a plan view.
3. The substrate with built-in electronic component according to
claim 1, wherein the storage portion is formed in a substantially
rectangular cuboid shape, and the electronic component is formed in
a substantially rectangular cuboid shape that is smaller than the
storage portion.
4. The substrate with built-in electronic component according to
claim 1, wherein the electronic component has input and output
terminals facing a conductive layer closest to the core layer and a
ground terminal connected to said conductive layer, and wherein the
first penetrating hole is not present in a region between the input
terminal and the output terminal of the electronic component in a
plan view.
5. The substrate with built-in electronic component according to
claim 1, wherein the electronic component is one of an elastic wave
filter, an IC chip, a capacitor, an inductor, and a resistor.
6. The substrate with built-in electronic component according to
claim 1, wherein the core layer is made of a metal.
7. The substrate with built-in electronic component according to
claim 1, wherein the core layer and a synthetic resin filler that
has a higher moisture absorbency than the core layer are made of a
synthetic resin that contains a reinforcing material, and a
synthetic resin that forms the core layer has a higher content of
the reinforcing material than the synthetic resin filler having a
higher moisture absorbency than the core layer.
8. The substrate with built-in electronic component according to
claim 1, wherein said at least one first penetrating hole is filled
with a synthetic resin that allows vapor from the synthetic resin
filler to go through.
9. The substrate with built-in electronic component according to
claim 1, wherein said conductive layer closest to the core layer is
a ground pattern that covers a substantial entirety of the
electronic component in the storage portion in a plan view except
areas for terminal connections and said at least one first
penetrating hole.
10. A substrate with built-in electronic component, comprising: a
core layer having a storage portion penetrating the core layer; an
electronic component stored in the storage portion; a synthetic
resin filler filling a space between the electronic component and
inner walls of the storage portion, the synthetic resin filler
having a higher moisture absorbency than that of the core layer;
and two or more pairs of an insulating layer and a conductive layer
disposed on two opposite surfaces of the core layer in a thickness
direction, the insulating layers being made of a synthetic resin,
the conductive layers being made of a metal, wherein, of the two or
more pairs of the insulating layer and the conductive layer
disposed on at least one of two opposite surfaces of the core layer
in a thickness direction, a conductive layer closest to the core
layer has at least one first penetrating hole configured such that
vapor from the synthetic resin filler goes through, and wherein, of
the two or more pairs of the insulating layer and the conductive
layer, a conductive layer other than the conductive layer closest
to the core layer has at least one second penetrating hole formed
therein so as to be close to, at a distance of 0.01 mm to 1.0 mm,
but not to overlap, the first penetrating hole in a plan view.
11. The substrate with built-in electronic component according to
claim 1, wherein the second penetrating hole has substantially the
same width and length as the first penetrating hole.
12. The substrate with built-in electronic component according to
claim 10, wherein the second penetrating hole has substantially the
same width and length as the first penetrating hole.
13. The substrate with built-in electronic component according to
claim 1, wherein a width of the second penetrating hole is 0.01 mm
to 1.0 mm.
14. The substrate with built-in electronic component according to
claim 10, wherein a width of the second penetrating hole is 0.01 mm
to 1.0 mm.
15. The substrate with built-in electronic component according to
claim 1, wherein a width of the second penetrating hole is 0.05 mm
to 0.2 mm.
16. The substrate with built-in electronic component according to
claim 10, wherein a width of the second penetrating hole is 0.05 mm
to 0.2 mm.
17. The substrate with built-in electronic component according to
claim 1, wherein a length of the second penetrating hole is 0.1 mm
to 1.0 mm.
18. The substrate with built-in electronic component according to
claim 10, wherein a length of the second penetrating hole is 0.1 mm
to 1.0 mm.
19. The substrate with built-in electronic component according to
claim 1, wherein a length of the second penetrating hole is 0.01 mm
to 5.0 mm.
20. The substrate with built-in electronic component according to
claim 10, wherein a length of the second penetrating hole is 0.01
mm to 5.0 mm.
Description
[0001] This application is a divisional of a pending application,
U.S. Ser. No. 13/909,880 filed on Jun. 4, 2013, which is hereby
incorporated by reference in its entirety. The parent application
is based upon and claims the benefit of Japanese Application No.
2012-247417, filed in Japan on Nov. 9, 2012, which is hereby
incorporated by reference in its entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a substrate with built-in
electronic component in which an electronic component is embedded
in a substrate, and more particularly, to a substrate with built-in
electronic component in which an electronic component is stored in
a storage portion formed in a core layer.
[0004] 2. Description of Related Art
[0005] Known examples of substrates with built-in electronic
component include a "substrate not provided with a core layer"
disclosed in Patent Document 1 below, for example, and a "substrate
provided with a core layer" disclosed in Patent Document 2 below,
for example. The "substrate not provided with a core layer" has a
structure in which an electronic component is embedded in an
insulating layer, and the electronic component is held in a proper
place by being covered with a synthetic resin constituting the
insulating layer. The "substrate provided with a core layer" has a
structure in which an electronic component is stored in a storage
portion that is formed so as to penetrate the core layer. When
there is space between the electronic component and inner walls of
the storage portion, the space is filled with a synthetic region,
and the electronic component is held in a proper position by being
covered by the synthetic resin filler.
[0006] In the "substrate provided with a core layer," if the
synthetic resin filler has higher moisture absorbency than that of
the core layer, the following problems occur. That is, because
various electronic components are generally mounted on a substrate
with built-in electronic component by the reflow soldering method,
due to the heat generated in the reflow soldering, moisture
included in the synthetic resin filler is evaporated, and tries to
escape to the outside. When insulating layers made of a synthetic
resin and conductive layers made of a metal are alternately formed
on one surface and the other surface of the core layer in the
thickness direction, the vapor tries to escape to the outside from
the end of each insulating layer closest to the core layer,
travelling through the insulating layer. However, because the path
through which the vapor travels to be released to the outside is
long, possible problems can be caused by the vapor, such as a crack
in the respective insulating layers closest to the core layer,
layer separation between the insulating layer and the core layer,
and layer separation between the insulating layer and a conductive
layer closest to the core layer.
RELATED ART DOCUMENTS
Patent Documents
[0007] Patent Document 1: Japanese Patent Application Laid-Open
Publication No. 2008-060413
[0008] Patent Document 2: Japanese Patent Application Laid-Open
Publication No. 2010-118581
SUMMARY OF THE INVENTION
[0009] An object of the present invention is to provide a substrate
with built-in electronic component that can prevent a problem of a
crack in an insulating layer and the like.
[0010] Additional or separate features and advantages of the
invention will be set forth in the descriptions that follow and in
part will be apparent from the description, or may be learned by
practice of the invention. The objectives and other advantages of
the invention will be realized and attained by the structure
particularly pointed out in the written description and claims
thereof as well as the appended drawings.
[0011] To achieve these and other advantages and in accordance with
the purpose of the present invention, as embodied and broadly
described, in one aspect, the present invention provides a
substrate with built-in electronic component including: a core
layer having a storage portion penetrating the core layer; an
electronic component stored in the storage portion; a synthetic
resin filler filling a space between the electronic component and
inner walls of the storage portion, the synthetic resin filler
having a higher moisture absorbency than that of the core layer;
and two or more pairs of an insulating layer and a conductive layer
disposed on two opposite surfaces of the core layer in a thickness
direction, respectively, the insulating layers being made of a
synthetic resin, the conductive layers being made of a metal,
wherein, of the two or more pairs of the insulating layer and the
conductive layers disposed on at least one of two opposite surfaces
of the core layer in a thickness direction, a conductive layer
closest to the core layer has at least one first penetrating hole
formed therein so as to overlap at least part of an opening edge of
the storage portion in a plan view.
[0012] According to the present invention, it is possible to
provide a substrate with built-in electronic component that can
prevent a problem of a crack in an insulating layer and the
like.
[0013] The above-mentioned objects, other objects, and features and
effects for the respective objects of the present invention will be
made apparent from the descriptions that follow and appended
drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] FIG. 1 is a vertical cross-sectional view showing a main
part of a substrate with built-in electronic component according to
Embodiment 1 of the present invention.
[0015] FIG. 2 is a horizontal cross-sectional view along the line
S2-S2 of FIG. 1.
[0016] FIG. 3 is a horizontal cross-sectional view along the line
S3-S3 of FIG. 1.
[0017] FIG. 4 is a horizontal cross-sectional view along the line
S4-S4 of FIG. 1.
[0018] FIG. 5 is a horizontal cross-sectional view along the line
S5-S5 of FIG. 1.
[0019] FIG. 6 is a horizontal cross-sectional view along the line
S6-S6 of FIG. 1.
[0020] FIG. 7 is a horizontal cross-sectional view along the line
S7-S7 of FIG. 1.
[0021] FIG. 8 is a vertical cross-sectional view showing a main
part of a substrate with built-in electronic component according to
Embodiment 2 of the present invention.
[0022] FIG. 9 is a horizontal cross-sectional view of FIG. 8
corresponding to FIG. 3.
[0023] FIG. 10 is a horizontal cross-sectional view of FIG. 8
corresponding to FIG. 4.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Embodiment 1
[0024] A substrate with built-in electronic component shown in
FIGS. 1 to 7 has a structure in which an electronic component,
which is a SAW filter 12 utilizing surface acoustic waves, is
embedded in a multilayer substrate 11. The line S1-S1 in FIGS. 2 to
7 indicates a cross-section position of FIG. 1.
[0025] The substrate 11 includes: a core layer 11a having a storage
portion 11a1 of a substantial rectangular cuboid shape formed so as
to penetrate the core layer 11a in the thickness direction; a
synthetic resin (will be referred to as a synthetic resin filler
below) 11b that fills a space between the SAW filter 12 stored in
the storage portion 11a1 and inner walls of the storage portion
11a1; a first insulating layer 11c formed on the upper surface (one
surface in the thickness direction) of the core layer 11a; a first
conductive layer 11d formed on the upper surface of the first
insulating layer 11c; a second insulating layer 11e formed on the
upper surface of the first conductive layer 11d; a second
conductive layer 11f formed on the upper surface of the second
insulating layer 11e; a third insulating layer 11g formed on the
lower surface (the other surface in the thickness direction) of the
core layer 11a; a third conductive layer 11h formed on the lower
surface of the third insulating layer 11g; a fourth insulating
layer 11i formed on the lower surface of the third conductive layer
11h; and a fourth conductive layer 11j formed on the lower surface
of the fourth insulating layer 11i.
[0026] The core layer 11a is made of a metal such as copper or a
copper alloy, and is formed in a thickness of 100 to 400 .mu.m, for
example. The synthetic resin filler 11b and the respective
insulating layers 11c, 11e, 11g, and 11i are made of a synthetic
resin such as an epoxy resin, polyimide, a bismaleimide triazine
resin, or a material obtained by adding a reinforcing material such
as glass fiber to any of these resins, and the thickness of the
insulating layers 11c, 11e, 11g, and 11i is set to 10 to 30 .mu.m,
for example. Because the core layer 11a is made of a metal, the
moisture absorbency of the synthetic resin filler 11b is higher
than that of the core layer 11a.
[0027] The respective conductive layers 11d, 11f, 11h, and 11j are
made of a metal such as copper or a copper alloy, and the thickness
thereof is set to 5 to 25 .mu.m, for example. In the respective
conductive layers 11d, 11f, 11h, and 11j, signal wiring lines and
ground wiring lines (see the reference characters of 11d1, 11f1,
11h1, and 11j) are patterned in a two-dimensional manner, and
conductor vias (see the reference characters of 11d4, 11d5, and
11f4) that are continued to, or not continued to the ground wiring
lines are formed so as to penetrate the respective insulating
layers interposed therebetween. The conductor vias are made of a
metal such as copper or a copper alloy, and the maximum diameter
thereof is set to 10 to 80 .mu.m, for example.
[0028] That is, on the upper surface and the lower surface of the
core layer 11a in the substrate 11, two pairs of insulating layers
made of a synthetic resin and conductive layers made of a metal are
respectively provided.
[0029] The SAW filter 12 includes a filter body 12a that is made of
a piezoelectric material such as lithium tantalate or lithium
niobate and that is formed in a substantial rectangular cuboid
shape, a filter function part disposed on the upper surface of the
filter body 12a (not shown in the figure), at least one cover that
covers the filter function part (not shown in the figure), a
sealing portion 12b that covers the cover, and an input terminal
12c, an output terminal 12d, and three ground terminals 12e of a
substantial circular shape exposed from the upper surface of the
sealing portion 12b. The filter function part has a ladder
structure including a plurality of resonators connected in series
and a plurality of resonators connected in parallel thereto, for
example, and each resonator includes comb-shaped electrodes and
reflectors disposed on both sides thereof.
[0030] As shown in FIGS. 1, 2, and 5, the SAW filter 12 is formed
in a substantial rectangular cuboid shape that is smaller than the
storage portion 11a1 formed in the core layer 11a. More
specifically, the cross-sectional shape and the depth
(corresponding to the thickness of the core layer 11a) of the
storage portion 11a1 formed in the core layer 11a are greater than
the cross-sectional shape and height of the SAW filter 12, and
also, the SAW filter 12 is placed in the upper center of the
storage portion 11a1 of the SAW filter 12. Therefore, the space is
formed on the four sides and bottom of the SAW filter 12. That is,
the four side faces and the lower surface of the SAW filter 12
stored in the storage portion 11a1 are covered by the synthetic
resin filler 11b, thereby holding the SAW filter 12 in a proper
place. The reference character V0 shown in FIGS. 2 and 5 represents
an opening edge of the storage portion 11a1.
[0031] As shown in FIG. 3, in the ground wiring portion 11d1 in the
first conductive layer 11d that is closest to the upper surface of
the core layer 11a, four first penetrating holes 11d2 are formed so
as to overlap part of the opening edge V0 of the storage portion
11a1 projected onto the ground wiring portion 11d1 of the first
conductive layer 11d in a parallel manner. More specifically, three
out of the four first penetrating holes 11d2 have substantially the
same width and length, and the remaining one has the substantially
same width as the other three while having a different length. The
four first penetrating holes 11d2 are formed such that the
respective centers thereof in the width direction substantially
coincide with respective four sides of the opening edge V0 of the
storage portion 11a1 projected in a parallel manner. The four first
penetrating holes 11d2 are respectively filled with the same
synthetic resin as that forming the second insulating layer 11e,
for example. The width of each first penetrating hole 11d2 is set
to 0.01 to 1.0 mm, for example, and more preferably to 0.05 to 0.2
mm. The length thereof is set to 0.01 to 5.0 mm, for example, and
more preferably to 0.1 to 1.0 mm.
[0032] In the ground wiring portion 11d1 of the first conductive
layer 11d, two penetrating holes 11d3 in a substantially circular
shape are formed so as to correspond to the input terminal 12c and
the output terminal 12d of the SAW filter 12, and inside of the
respective two penetrating holes 11d3, conductor vias 11d4 are
formed so as not to make contact with the penetrating holes 11d3.
The conductor vias 11d4 have a T-shaped cross section, and are
constituted of a disk portion and a columnar portion, respectively.
The thickness and the height of the disk portions of the two
conductor vias 11d4 are the same as those of the ground wiring
portion 11d1, and the bottom end of the columnar portion of one
conductor via 11d4 is connected to the input terminal 12c of the
SAW filter 12, and the bottom end of the columnar portion of the
other conductor via 11d4 is connected to the output terminal 12d of
the SAW filter 12. Respective ring-shaped spaces between the two
penetrating holes 11d3 and the disk portions of the two conductor
vias 11d4, which are disposed therein, are filled with the same
synthetic resin as that forming the second insulating layer 11e,
for example.
[0033] Further, on the lower surface side of the ground wiring
portion 11d1 of the first conductive layer 11d, three columnar
conductor vias 11d5 are formed continuously from the ground wiring
portion 11d1 so as to correspond to the respective three ground
terminals 12e of the SAW filter 12. The bottom ends of the three
conductor vias 11d5 are connected to the three ground terminals 12e
of the SAW filter 12, respectively.
[0034] As shown in FIG. 4, in the ground wiring portion 11f1 of the
second conductive layer 11f that is second closest to the upper
surface of the core layer 11a, four second penetrating holes 11f2
are formed so as to overlap part of the four first penetrating
holes 11d2 that are projected onto the ground wiring portion 11f1
of the second conductive layer 11f in a parallel manner. More
specifically, two of the four second penetrating holes 11f2 have
substantially the same width and length, and the remaining two have
the same width as the other two while having a different length.
The four second penetrating holes 11f2 are formed in positions that
partially overlap in the lengthwise direction with the four first
penetrating holes 11d2 that are projected in a parallel manner,
respectively. These four second penetrating holes 11f2 are not
filled with a synthetic resin. The width of each second penetrating
hole 11f2 is set to 0.01 to 1.0 mm, for example, and more
preferably to 0.05 to 0.2 mm. The length thereof is set to 0.01 to
5.0 mm, for example, and more preferably to 0.1 to 1.0 mm.
[0035] In the ground wiring portion 11f1 of the second conductive
layer 11f, two penetrating holes 11f3 in a substantially circular
shape are formed so as to correspond to the input terminal 12c and
the output terminal 12d of the SAW filter 12, and inside of the
respective two penetrating holes 11f3, conductor vias 11f4 are
formed so as not to make contact with the penetrating holes 11f3.
The conductor vias 11f4 have a T-shaped cross section, and are
constituted of a disk portion and a columnar portion, respectively.
The thickness and the height of the disk portions of the two
conductor vias 11f4 are the same as those of the ground wiring
portion 11f1, and the bottom ends of the two conductor vias 11f4
are connected to the upper surfaces of the respective disk portions
of the two conductor vias 11d4 formed in the ground wiring portion
11d1 of the first conductive layer 11d. Respective ring-shaped
spaces between the two penetrating holes 11f3 and the respective
disk portions of the two conductor vias 11f4, which are disposed
therein, are not filled with a synthetic resin.
[0036] As shown in FIG. 6, in the ground wiring portion 11h1 of the
third conductive layer 11h that is closest to the lower surface of
the core layer 11a, four first penetrating holes 11h2 are formed so
as to overlap part of the opening edge V0 of the storage portion
11a1 that is projected onto the ground wiring portion 11h1 of the
third conductive layer 11h in a parallel manner. More specifically,
two of the four first penetrating holes 11h2 have substantially the
same width and length, and the remaining two have substantially the
same width as the other two while having a different length. The
four first penetrating holes 11h2 are formed such that the
respective centers thereof in the width direction substantially
coincide with respective four sides of the opening edge V0 of the
storage portion 11a1 projected in a parallel manner. The four first
penetrating holes 11h2 are respectively filled with the same
synthetic resin as that forming the fourth insulating layer 11i,
for example. The width of each first penetrating hole 11h2 is set
to 0.01 to 1.0 mm, for example, and more preferably to 0.05 to 0.2
mm. The length thereof is set to 0.01 to 5.0 mm, for example, and
more preferably to 0.1 to 1.0 mm.
[0037] As shown in FIG. 7, in the ground wiring portion 11j 1 of
the fourth conductive layer 11j that is second closest to the lower
surface of the core layer 11a, four second penetrating holes 11j2
are formed so as to overlap part or all of the four first
penetrating holes 11h2 that are projected onto the ground wiring
portion 11jof the fourth conductive layer 11j in a parallel manner.
More specifically, two of the four second penetrating holes 11j2
have substantially the same width and length, and the remaining two
have substantially the same width as the other two while having a
different length. Three of the four second penetrating holes 11j2
are formed so as to partially overlap in the lengthwise direction
with three of the four first penetrating holes 11h2 that are
projected in a parallel manner, and one of the four second
penetrating holes 11j2 is formed such that the center thereof in
the lengthwise direction coincides with the center in the
lengthwise direction of one of the four first penetrating holes
11h2 that are projected in a parallel manner. These four second
penetrating holes 11j2 are not filled with a synthetic resin. The
width of each second penetrating hole 11j2 is set to 0.01 to 1.0
mm, for example, and more preferably to 0.05 to 0.2 mm. The length
thereof is set to 0.01 to 5.0 mm, for example, and more preferably
to 0.1 to 1.0 mm.
[0038] Below, effects of the substrate with built-in electronic
component shown in FIGS. 1 to 7 will be explained.
[0039] Generally, various electronic components are mounted on the
substrate with built-in electronic component by the reflow
soldering method. Among the synthetic resin filler 11b and the
respective insulating layers 11c, 11e, 11g, and 11i made of a
synthetic resin, the synthetic resin filler 11b that have a larger
mass includes more moisture than the respective insulating layers
11c, 11e, 11g, and 11i, and therefore, due to the heat generated by
the reflow soldering, moisture included in the synthetic resin
filler 11b is evaporated, and vapor tries to escape to the outside.
More specifically, vapor generated in the synthetic resin filler
11b moves toward the top and bottom sides along the inner walls of
the storage portion 11a1.
[0040] (Effect 1) In the substrate with built-in electronic
component described above, four first penetrating holes 11d2 are
formed in the ground wiring portion 11d1 of the first conductive
layer 11d that is closest to the upper surface of the core layer
11a so as to overlap part of the opening edge V0 of the storage
portion 11a1 that is projected onto the ground wiring portion 11d1
of the first conductive layer 11d in a parallel manner. Therefore,
most of the vapor that moves toward the upper side along the inner
walls of the storage portion 11a1 can be guided smoothly to the
second insulating layer 11e through the first insulating layer 11c
and the four first penetrating holes 11d2. Similarly, in the ground
wiring portion 11h1 of the third conductive layer 11h that is
closest to the lower surface of the core layer 11a, four first
penetrating holes 11h2 are formed so as to overlap part of the
opening edge V0 of the storage portion 11a1 that is projected onto
the ground wiring portion 11h1 of the third conductive layer 11h in
a parallel manner. Therefore, most of the vapor that moves toward
the lower side along the inner walls of the storage portion 11a1
can be guided smoothly to the fourth insulating layer 11i through
the third insulating layer 11g and the four first penetrating holes
11h2.
[0041] That is, as compared with the case in which the vapor
generated in the synthetic resin filler 11b is guided to the first
insulating layer 11c and the third insulating layer 11g that are
respectively closest to the core layer 11a, the vapor pressure
applied to the first insulating layer 11c and the third insulating
layer 11g can be reduced. Therefore, it is possible to prevent the
problems of a crack formed in the first insulating layer 11c and
the third insulating layer 11g resulting from the vapor pressure,
the layer separation between the first insulating layer 11c and the
core layer 11a, the layer separation between the third insulating
layer 11g and the core layer 11a, the layer separation between the
first insulating layer 11c and the first conductive layer 11d, the
layer separation between the third insulating layer 11g and the
third conductive layer 11h, and the like.
[0042] (Effect 2) In the substrate with built-in electronic
component described above, four second penetrating holes 11f2 are
formed in the ground wiring portion 11f1 of the second conductive
layer 11f that is second closest to the upper surface of the core
layer 11a so as to respectively overlap part of the first
penetrating holes 11d2 that are projected onto the ground wiring
portion 11f1 of the second conductive layer 11f in a parallel
manner. Therefore, it is possible to release most of the vapor that
moves toward the upper side along the inner walls of the storage
portion 11a1 to the outside through the first insulating layer 11c,
the four first penetrating holes 11d2 (filled with a synthetic
resin; see FIG. 3), the second insulating layer 11e, and the four
second penetrating holes 11f2 (not filled with a synthetic resin;
see FIG. 4) (see the release route PW shown in the top side of FIG.
1). Similarly, four second penetrating holes 11j2 are formed in the
ground wiring portion 11jof the fourth conductive layer 11j that is
second closest to the lower surface of the core layer 11a so as to
respectively overlap part or all of the first penetrating holes
11h2 that are projected onto the ground wiring portion 11jof the
fourth conductive layer 11j in a parallel manner. Therefore, it is
possible to release most of the vapor that moves toward the lower
side along the inner walls of the storage portion 11a1 to the
outside through the third insulating layer 11g, the four first
penetrating holes 11h2 (filled with a synthetic resin; see FIG. 6),
the fourth insulating layer 11i, and the four second penetrating
holes 11j2 (not filled with a synthetic resin; see FIG. 7) (see the
release route PW shown in the bottom side of FIG. 1).
[0043] That is, as compared with the case in which the vapor that
passed through the four first penetrating holes 11d2 and the four
first penetrating holes 11h2 is guided to the second insulating
layer 11e and the fourth insulating layer 11i, the vapor pressure
applied to the second insulating layer 11e and the fourth
insulating layer 11i can be reduced. Therefore, it is possible to
prevent the problems of a crack formed in the second insulating
layer 11e and the fourth insulating layer 11i resulting from the
vapor pressure, the layer separation between the second insulating
layer 11e and the second conductive layer 11f, the layer separation
between the fourth insulating layer 11i and the fourth conductive
layer 11j, and the like.
[0044] (Effect 3) In the substrate with built-in electronic
component described above, the shapes of some of the four second
penetrating holes 11f2 formed in the ground wiring portion 11f1 of
the second conductive layer 11f that is second closest to the upper
surface of the core layer 11a differ from the shape of the four
first penetrating holes 11d2 that are projected onto the ground
wiring portion 11f1 of the second conductive layer 11f in a
parallel manner. Therefore, it is possible to control the pressure
and direction of the vapor that passed through the four first
penetrating holes 11d2 by the shape difference. Similarly, the
shapes of some of the four second penetrating holes 11j2 formed in
the ground wiring portion 11jof the fourth conductive layer 11j
that is second closest to the lower surface of the core layer 11a
differ from the shape of the four first penetrating holes 11f2 that
are projected onto the ground wiring portion 11jof the fourth
conductive layer 11j in a parallel manner. Therefore, it is
possible to control the pressure and direction of the vapor that
passed through the four first penetrating holes 11f2 by the shape
difference.
[0045] That is, the pressure and direction of the vapor that passed
through the four first penetrating holes 11d2 and the four first
penetrating holes 11h2 can be controlled by the shapes of the four
second penetrating holes 11f2 and the four second penetrating holes
11j2, which makes it possible to change the flow volume of the
vapor that is released to the outside from the four second
penetrating holes 11f2 and the four second penetrating holes 11j2
by taking into consideration the positions of the various
electronic components mounted on the substrate with built-in
electronic component.
[0046] (Effect 4) In the substrate with built-in electronic
component described above, the SAW filter 12 has the input terminal
12c and the output terminal 12d that face the ground wiring portion
11f1 of the first conductive layer 11f that is closest to the upper
surface of the core layer 11a and the ground terminals 12e
connected to the ground wiring portion 11f1 of the first conductive
layer 11f, and the first penetrating holes 11d2 are not present in
a region that connects the input terminal 12c to the output
terminal 12d that are projected onto the ground wiring portion 11f1
of the first conductive layer 11f in a parallel manner (see FIGS. 2
and 3). Therefore, even when a return current of the current that
flows through the input terminal 12c and the output terminal 12d of
the SAW filter 12 flows through the ground wiring portion 11f1 of
the first conductive layer 11f, the length of the path of the
return current can be minimized, which prevents problems caused by
the return current path being longer such as impedance mismatch,
and as a result, the desired properties of the SAW filter 12 can be
maintained.
Embodiment 2
[0047] A substrate with built-in electronic component shown in
FIGS. 8 to 10 has a multilayer substrate 11 and an electronic
component built therein, which is a SAW filter 12, in a manner
similar to the substrate with built-in electronic component
described in Embodiment 1 above. The substrate with built-in
electronic component differs from the substrate with built-in
electronic component described in Embodiment 1 in the structure of
the second conductive layer 11f. Because other structures are the
same as those of the substrate with built-in electronic component
described in Embodiment 1, the descriptions thereof are
omitted.
[0048] That is, as shown in FIG. 10, in the ground wiring portion
11f1 of the second conductive layer 11f that is second closest to
the upper surface of the core layer 11a, four second penetrating
holes 11f2 are formed so as to be close to but not to overlap the
four first penetrating holes 11d2 that are projected onto the
ground wiring portion 11f1 of the second conductive layer 11f in a
parallel manner. More specifically, the four second penetrating
holes 11f2 have substantially the same width and length as the
first penetrating holes 11d2, and are formed so as to be outside of
the first penetrating holes 11d2 that are projected in a parallel
manner. These four second penetrating holes 11f2 are not filled
with a synthetic resin. The width of each second penetrating hole
11f2 is set to 0.01 to 1.0 mm, for example, and more preferably to
0.05 to 0.2 mm. The length thereof is set to 0.01 to 5.0 mm, for
example, and more preferably to 0.1 to 1.0 mm. Each second
penetrating hole 11f2 is formed so as to be close to each first
penetrating hole 11d2 at a distance of 0.01 to 1.0 mm, but not to
overlap therewith.
[0049] With the substrate with built-in electronic component shown
in FIGS. 8 to 10, the release route PW shown in the top side of
FIG. 8 becomes slightly longer than the release route PW shown in
the top side of FIG. 1, but effects similar to Effects 1 to 4 above
can be obtained. Also, in the substrate with built-in electronic
component shown in FIGS. 8 to 10, each second penetrating hole 11f2
is formed so as to be close to but not overlap each first
penetrating hole 11d2, and therefore, another advantage of
improving the shield effect to suppress the outside noise can be
achieved.
Other Embodiments
[0050] (1) In Embodiments 1 and 2 above, the core layer 11a was
made of a metal such that the synthetic resin filler 11b has a
higher moisture absorbency than the core layer 11a, but it is also
possible to form the core layer 11a of other materials than a metal
that have a lower moisture absorbency than that of the synthetic
resin filler 11b such as ceramics or a synthetic resin. In this
case, effects similar to Effects 1 to 4 above can be achieved.
[0051] In the case of forming the core layer 11a of a synthetic
resin, when the core layer 11a is made of a different type of
synthetic resin from that forming the synthetic resin filler 11b
and the respective insulating layers 11c, 11e, 11g, and 11i, a
synthetic resin that has a lower moisture absorbency than that of
the synthetic resin filler 11b can be used. In the case of forming
the core layer 11a of the same kind of synthetic resin as the
synthetic resin filler 11b and the respective insulating layers
11c, 11e, 11g, and 11i, or in the case of forming the core layer
11a of a different kind of synthetic resin that has substantially
the same moisture absorbency as the synthetic resin filler 11b and
the respective insulating layers 11c, 11e, 11g and 11i, the
moisture absorbency of the synthetic resin that forms the core
layer can be made lower than that of the synthetic resin filler 11b
by adding a reinforcing material such as glass fiber only to the
synthetic resin. Alternatively, the moisture absorbency of the
synthetic resin that forms the core layer can be made lower than
that of the synthetic resin filler 11b by adding more reinforcing
material to the synthetic resin than in the synthetic resin filler
11b.
[0052] (2) In Embodiments 1 and 2 above, the second penetrating
holes 11f2 and 11j2 were not filled with a synthetic resin.
However, in a manner similar to the first penetrating holes 11d2
and 11h2, the second penetrating holes 11f2 and 11j2 may be filled
with a synthetic resin. In this case, effects similar to Effects 1
to 4 above can be achieved.
[0053] (3) In Embodiments 1 and 2 above, four first penetrating
holes 11d2 were formed in the first conductive layer 11d, and four
first penetrating holes 11h2 were formed in the third conductive
layer 11h. However, the number of the first penetrating holes 11d2
and 11h2 may be one to three, or five or more. Also, the shape of
the holes is not limited to that shown in the figures, and may be
formed in various shapes such as a circular shape or a polygonal
shape. The positions of the respective holes can also be
appropriately changed. That is, as long as at least one first
penetrating hole is provided so as to overlap at least a part of
the opening edge V0 of the storage portion 11a1 that is projected
onto at least one of the first conductive layer 11d and the third
conductive layer 11h, an effect similar to Effect 1 above can be
achieved.
[0054] (4) In Embodiments 1 and 2, four second penetrating holes
11f2 were formed in the second conductive layer 11f, and four
second penetrating holes 11j2 were formed in the fourth conductive
layer 11j. However, the number of the second penetrating holes 11f2
and 11j2 may be one to three, or five or more. Also, the shape of
the holes is not limited to that shown in the figures, and may be
formed in various shapes such as a circular shape or a polygonal
shape. The positions of the respective holes can also be
appropriately changed. That is, as long as at least one second
penetrating hole is provided so as to overlap at least a part of
the first penetrating hole 11d2 or the first penetrating hole 11h2
that is projected onto at least one of the second conductive layer
11f and the fourth conductive layer 11j, or as long as at least one
second penetrating hole is provided so as to be close to but not to
overlap the first penetrating hole 11d2 or the first penetrating
hole 11h2 that is projected onto at least one of the second
conductive layer 11f and the fourth conductive layer 11j, effects
similar to Effects 2 and 3 above can be achieved.
[0055] (5) In Embodiments 1 and 2 above, two pairs of insulating
layers and conductive layers were provided on each of the upper and
lower surfaces of the core layer 11a, but even when there are three
or more pairs of insulating layers and conductive layers, as long
as the conditions of (3) or (4) above are satisfied, effects
similar to Effect 1 or Effects 2 and 3 above can be achieved.
[0056] (6) In Embodiments 1 and 2 above, the SAW filter 12 was
stored in the storage portion 11a1 of the core layer 11a, but
instead of the SAW filter 12, other types of elastic wave filters
such as a BAW filter utilizing bulk acoustic waves may be stored
therein, or other electronic components such as an IC chip having
an input terminal, an output terminal, and ground terminals in a
manner similar to the SAW filter 12 may be stored therein. That is,
as long as an electronic component has an input terminal and an
output terminal facing the conductive layer 11d and ground
terminals connected to the conductive layer 11d, and the first
penetrating holes are not present in a region that connects the
input terminal and the output terminal of the electronic component
that are projected onto the conductive layer 11d in a parallel
manner, an effect similar to Effect 4 above can be achieved. It is
apparent that even when other electronic components that do not
meet the above-mentioned conditions such as a capacitor, inductor,
or resistor are embedded, effects similar to Effects 1 to 3 above
can be achieved.
[0057] It will be apparent to those skilled in the art that various
modification and variations can be made in the present invention
without departing from the spirit or scope of the invention. Thus,
it is intended that the present invention cover modifications and
variations that come within the scope of the appended claims and
their equivalents. In particular, it is explicitly contemplated
that any part or whole of any two or more of the embodiments and
their modifications described above can be combined and regarded
within the scope of the present invention.
* * * * *