U.S. patent application number 13/904169 was filed with the patent office on 2014-12-04 for heat dissipation device embedded within a microelectronic die.
The applicant listed for this patent is Manohar S Konchady, Mihir K. Roy. Invention is credited to Manohar S Konchady, Mihir K. Roy.
Application Number | 20140353817 13/904169 |
Document ID | / |
Family ID | 51984217 |
Filed Date | 2014-12-04 |
United States Patent
Application |
20140353817 |
Kind Code |
A1 |
Konchady; Manohar S ; et
al. |
December 4, 2014 |
HEAT DISSIPATION DEVICE EMBEDDED WITHIN A MICROELECTRONIC DIE
Abstract
The subject matter of the present application relates to a heat
dissipation device that is embedded within a microelectronic die.
The heat dissipation device may be fabricated by forming at least
one trench extending into the microelectronic die from a
microelectronic die back surface, which opposes an active surface
thereof, and filling the trenches with at least one layer of
thermally conductive material. In one embodiment, the heat
dissipation device may be a thermoelectric cooling device.
Inventors: |
Konchady; Manohar S;
(Chandler, AZ) ; Roy; Mihir K.; (Chandler,
AZ) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Konchady; Manohar S
Roy; Mihir K. |
Chandler
Chandler |
AZ
AZ |
US
US |
|
|
Family ID: |
51984217 |
Appl. No.: |
13/904169 |
Filed: |
May 29, 2013 |
Current U.S.
Class: |
257/713 ;
438/122 |
Current CPC
Class: |
H01L 2224/73253
20130101; H01L 23/38 20130101; H01L 2224/0401 20130101; H01L
2224/32245 20130101; H01L 23/42 20130101; H01L 24/16 20130101; H01L
2924/10271 20130101; H01L 2924/16251 20130101; H01L 2924/1032
20130101; H01L 2924/12042 20130101; H01L 24/73 20130101; H01L
2924/10253 20130101; H01L 2924/10158 20130101; H01L 27/16 20130101;
H01L 29/0657 20130101; H01L 2924/12042 20130101; H01L 2924/1434
20130101; H01L 24/32 20130101; H01L 2224/16225 20130101; H01L
2924/3511 20130101; H01L 2924/1432 20130101; H01L 2224/16225
20130101; H01L 2924/00 20130101; H01L 2224/32225 20130101; H01L
23/562 20130101; H01L 2924/1433 20130101; H01L 23/3677 20130101;
H01L 2224/32225 20130101; H01L 2224/73204 20130101; H01L 2224/73204
20130101; H01L 2924/00 20130101; H01L 2924/10155 20130101 |
Class at
Publication: |
257/713 ;
438/122 |
International
Class: |
H01L 23/34 20060101
H01L023/34 |
Claims
1. A microelectronic device, comprising: a microelectronic die
having an active surface and an opposing back surface; and at least
one heat dissipation device extending into, without extending
through, the microelectronic die from the microelectronic die back
surface, wherein heat dissipation device comprises a first
thermally conductive material layer abutting a second thermally
conductive material layer and wherein the first thermally
conductive material layer is in electrical contact with a first
terminal of a current generating electrical device and the second
thermally conductive material layer is in electrical contact with a
second terminal of the current generating electronic device.
2. (canceled)
3. (canceled)
4. (canceled)
5. The microelectronic device of claim 1, wherein the at least one
heat dissipation device is positioned proximate a hot spot location
in the microelectronic die.
6. (canceled)
7. The microelectronic device of claim 1, wherein the
microelectronic die active surface is electrically connected to a
microelectronic substrate.
8. The microelectronic device of claim 1, further comprising an
integrated heat spreader in thermal contact with the at least one
heat dissipation device.
9. The microelectronic device of claim 1, further comprising at
least one of a seed layer and a barrier layer disposed between the
microelectronic die and the at least one heat dissipation
device.
10. A method of fabricating a heat dissipation device within a
microelectronic die, comprising forming a microelectronic die
having an active surface and an opposing back surface; forming at
least one trench extending into, without extending through, the
microelectronic die from the microelectronic die back surface;
disposing a first thermally conductive material within the at least
one trench and disposing a second thermally conductive material
layer abutting the first thermally conductive material layer within
the at least one trench; electrically contacting the first
thermally conductive material layer with a first terminal of a
current generating electrical device; and electrically contacting
the second thermally conductive material layer with a second
terminal of the current generating electronic device.
11. (canceled)
12. (canceled)
13. The method of claim 10, wherein forming at least one trench
extending into the microelectronic die from the microelectronic die
back surface comprises forming at least one trench extending into
the microelectronic die from the microelectronic die back surface
by a technique selected from the group consisting of etching, ion
bombardment, and laser ablation.
14. The method of claim 10, further comprising forming at least one
of a seed layer and a barrier layer disposed between the at least
one trench and the at least one thermally conductive material
layer.
15. The method of claim 10, wherein disposing at least one layer of
thermally conductive material within the at least one trench
comprises patterning a mask with at least one opening corresponding
to the at least one trench; and plating the thermally conductive
material within the at least one trench.
16. The method of claim 15, further including removing the
mask.
17. The method of claim 10, further comprising electrically
connecting the microelectronic die active surface to a
microelectronic substrate.
18. The method of claim 10, further including thermally contacting
an integrated heat spreader with the heat dissipation device.
19. (canceled)
20. The method of claim 10, wherein forming the at least one heat
dissipation device comprises forming the at least one heat
dissipation device proximate a hot spot location in the
microelectronic die.
21. An electronic system, comprising: a housing; a microelectronic
substrate disposed within the housing; and a microelectronic device
comprising: a microelectronic die having an active surface and an
opposing back surface electrically attached to the microelectronic
substrate by the microelectronic die active surface; and a heat
dissipation device extending into, without extending through, the
microelectronic die from the microelectronic die back surface,
wherein the heat dissipation device comprises a first thermally
conductive material layer abutting a second thermally conductive
material layer and wherein the first thermally conductive material
layer is in electrical contact with a first terminal of a current
generating electrical device and the second thermally conductive
material layer is in electrical contact with a second terminal of
the current generating electronic device.
22. (canceled)
23. (canceled)
24. (canceled)
25. The electronic system of claim 21, wherein the at least one
heat dissipation device is positioned proximate a hot spot location
in the microelectronic die.
26. (canceled)
27. The electronic system of claim 21, further comprising an
integrated heat spreader in thermal contact with the at least one
heat dissipation device.
28. The electronic system of claim 21, further comprising at least
one of a seed layer and a barrier layer disposed between the
microelectronic die and the at least one heat dissipation device.
Description
TECHNICAL FIELD
[0001] Embodiments of the present description generally relate to
the field of heat dissipation from a microelectronic die, and, more
specifically, to a heat dissipation device embedded within the
microelectronic die.
BACKGROUND ART
[0002] The microelectronic industry is continually striving to
produce ever faster and smaller microelectronic dice for use in
various mobile electronic products, such as portable computers,
electronic tablets, cellular phones, digital cameras, and the like.
As these goals are achieved, the density of power consumption of
integrated circuit components within the microelectronic dice has
increased, which, in turn, increases the average junction
temperature of the microelectronic die. If the temperature of the
microelectronic die becomes too high, the integrated circuits
within the microelectronic die may be damaged or destroyed. In
typical microelectronic dice, such as flip-chip type dice, heat is
generally removed convectively with a heat spreader/heat sink
attached to a back surface of the microelectronic die. However,
when microelectronic dice are used in thin products, such as smart
phones, tablets, ultrabook computers, and the like, space for the
incorporation of such heat removal solutions is limited. Therefore,
there is an ongoing effort to design ever more efficient,
cost-effective, and lower profile heat dissipation devices for
microelectronic dice.
BRIEF DESCRIPTION OF THE DRAWINGS
[0003] The subject matter of the present disclosure is particularly
pointed out and distinctly claimed in the concluding portion of the
specification. The foregoing and other features of the present
disclosure will become more fully apparent from the following
description and appended claims, taken in conjunction with the
accompanying drawings. It is understood that the accompanying
drawings depict only several embodiments in accordance with the
present disclosure and are, therefore, not to be considered
limiting of its scope. The disclosure will be described with
additional specificity and detail through use of the accompanying
drawings, such that the advantages of the present disclosure can be
more readily ascertained, in which:
[0004] FIG. 1 illustrates a side cross-sectional view of a
microelectronic die, according to one embodiment of the present
description.
[0005] FIGS. 2a and 2b illustrate a side cross-sectional view and a
top plan view, respectively, of at least one trench formed in a
back surface of the microelectronic die of FIG. 1, according to one
embodiment of the present description.
[0006] FIGS. 3a-3d illustrate side cross-sectional views of various
embodiments of trench shapes, according to embodiments of the
present description.
[0007] FIG. 4 illustrates a side cross-sectional view of a
seed/barrier layer deposited on the microelectronic die back
surface and within the trenches of the structure illustrated in
FIG. 2, according to an embodiment of the present description.
[0008] FIG. 5 illustrates a side cross-sectional view of a mask
patterned on the microelectronic die back surface with at least one
opening corresponding to at least one of the trenches of the
structure illustrated in FIG. 4, according to an embodiment of the
present description.
[0009] FIG. 6 illustrates a side cross-sectional view of the
trenches of FIG. 5 filled with a thermally conductive material to
form at least one heat transfer device, according to an embodiment
of the present description.
[0010] FIG. 7 illustrates a side cross-sectional view of the
structure of FIG. 6 after the removal of the mask, according to an
embodiment of the present description.
[0011] FIGS. 8a and 8b illustrates a side cross-sectional view and
a top plan view, respectively, of a microelectronic die having
embedded heat dissipation devices located in specific regions of
the microelectronic die, according to another embodiment of the
present description.
[0012] FIGS. 9a and 9b illustrates a side cross-sectional view and
a top plan view, respectively, of a microelectronic die having an
embedded thermoelectric cooling device, according to yet another
embodiment of the present description.
[0013] FIG. 10 illustrates a side cross-sectional view of a
microelectronic die, having an embedded heat dissipation device,
attached to a microelectronic structure and having an integrated
heat spreading in thermal contract therewith, according to an
embodiment of the present description.
[0014] FIG. 11 is a flow chart of a process of forming a heat
dissipation device within a microelectronic die, according to an
embodiment of the present description.
[0015] FIG. 12 illustrates an electronic system, according to one
embodiment of the present description.
DETAILED DESCRIPTION
[0016] In the following detailed description, reference is made to
the accompanying drawings that show, by way of illustration,
specific embodiments in which the claimed subject matter may be
practiced. These embodiments are described in sufficient detail to
enable those skilled in the art to practice the subject matter. It
is to be understood that the various embodiments, although
different, are not necessarily mutually exclusive. For example, a
particular feature, structure, or characteristic described herein,
in connection with one embodiment, may be implemented within other
embodiments without departing from the spirit and scope of the
claimed subject matter. In addition, it is to be understood that
the location or arrangement of individual elements within each
disclosed embodiment may be modified without departing from the
spirit and scope of the claimed subject matter. The following
detailed description is, therefore, not to be taken in a limiting
sense, and the scope of the subject matter is defined only by the
appended claims, appropriately interpreted, along with the full
range of equivalents to which the appended claims are entitled. In
the drawings, like numerals refer to the same or similar elements
or functionality throughout the several views, and that elements
depicted therein are not necessarily to scale with one another,
rather individual elements may be enlarged or reduced in order to
more easily comprehend the elements in the context of the present
description.
[0017] Embodiments of the present description relate to a heat
dissipation device that is embedded within a microelectronic die.
The heat dissipation device may be fabricated by forming at least
one trench extending into the microelectronic die from a
microelectronic die back surface, which opposes an active surface
thereof, and filling the trenches with at least one layer of
thermally conductive material.
[0018] As shown in FIG. 1, a microelectronic die 110 may be
fabricated or provided, wherein the microelectronic die 110 may
include an active surface 112 and an opposing back surface 114. As
will be understood to those skilled in the art, the microelectronic
die 110 may include an active region 116 proximate the
microelectronic die active surface 112, wherein the integrated
circuitry (not shown) of the microelectronic die 110 is formed in
and/or on the microelectronic die active region 116. The
microelectronic die 110 may be formed from any appropriate
material, including, but not limited to silicon, germanium,
silicon-germanium or III-V compound semiconductor material, and may
include a silicon-on-insulator substrate. The microelectronic die
110 may be any appropriate microelectronic device, including, but
not limited to a microprocessor, a chipset, a graphics device, a
wireless device, a memory device, an application specific
integrated circuit device, and the like.
[0019] As shown in FIGS. 2a and 2b, at least one trench 120 may be
formed to extend into the microelectronic die 110 from the
microelectronic die back surface 114. The trenches 120 may be
formed by any technique known in the art, including, but not
limited to, lithography with wet or dry etching, ion bombardment,
laser ablation, and the like. Although the trenches 120 of FIGS. 2a
and 2b are illustrated to run substantially parallel to one
another, it is understood that the trenches 120 could form any
appropriate pattern. Furthermore, although the trenches 120 are
shown in FIG. 2 as having a substantially square shaped in
cross-section, it is understood that the trenches 120 may have any
appropriate cross-sectional shape including V-shaped (FIG. 3a),
trapezoidal (FIG. 3b), rectangular (FIG. 3c), U-shaped (FIG. 3d),
and the like. As will be understood to those skilled in the art,
the cross-sectional shape of the trenches 120 may be a function of
the technique used to form the trenches 120, as well as the
operating parameters used with those techniques.
[0020] As shown in FIG. 4, at least one seed and/or a barrier layer
130 may be optionally deposited on the microelectronic die back
surface 114 and within the trenches 120. The seed/barrier layer 130
may be formed from any appropriate material and may be deposited by
any technique known in the art, including but not limited to,
sputtering processes and electro-less plating processes. As will be
understood to those skilled in the art, a barrier layer may be
utilized to prevent migration of a subsequently deposited material,
and a seed layer may be utilized assist in the subsequent plating
of a material.
[0021] As shown in FIG. 5, a mask 140 may be patterned on the
microelectronic die back surface 114 with at least one opening 142
corresponding to at least one of the trenches 120. The mask 140 may
be any appropriate material, including but not limited to
photoresist materials, such as poly(methyl methacrylate),
poly(methyl glutarimide), phenol formaldehyde resin, and the like,
and may be patterned by any known technique, including but not
limited to, lithographic techniques.
[0022] As shown in FIG. 6, the trenches 120 (see FIG. 5) may be
filled with an appropriate thermally conductive material 152 to
form at least one heat dissipation device 150, and thereby forming
a microelectronic device 155 comprising the microelectronic die 110
and the heat dissipation device 150. The filling of the trenches
120 (see FIG. 5) may be achieved by any technique known in the art,
including but not limited to electrolytic plating. The thermally
conductive material 152 may be any appropriate material including
but not limited to metals, such as copper, silver, alloys thereof,
and the like. As shown in FIG. 7, the mask 140 (see FIG. 6) may be
removed by any appropriate technique known in the art. It is
understood that after the removal of the mask 140 (see FIG. 6), the
microelectronic die back surface 114 and/or the thermally
conductive material 152 may be planarized.
[0023] As will be understood to those skilled in the art, the
formation of the heat dissipation device 150 may increase the
cross-section contact area for heat transfer, thereby enhancing the
removal of heat from the microelectronic die 110, without
substantially changing a thickness T (see FIG. 2a), of the
microelectronic die 110. It is understood, that trench depth D (see
FIG. 2a), trench spacing S (see FIG. 2a), and the cross-sectional
shape of the trenches 120 (e.g. see FIGS. 2a and 3a-3d) may be
varied depending on thermal performance requirements. It is further
understood that the trench depth D should not encroach into the
active region 116 (e.g. such that no transition performance would
be detected). Additionally, it is understood that the thermally
conductive material 152 (see FIG. 7) could be selected to have a
coefficient of thermal expansion that substantially counteracts
warpage during subsequent reflow processes, as will be understood
to those skilled in the art.
[0024] Although the heat dissipation device 150 is shown to extend
substantially across the entire microelectronic die back surface
114 in FIG. 2b, one of more heat dissipation devices (shown as
elements 150a and 150b in FIGS. 8a and 8b) may be selectively
formed over "hot spot regions" (shown as elements 160a and 160b in
FIGS. 8a and 8b). Hot spot regions 160a and 160b are areas wherein
the greatest amount of heat is generated by the integrated
circuitry (not shown) within the microelectronic die 110. The
selective formation of the heat dissipation devices 150a and 150b
may be advantageous in reducing the cost of fabrication depending
on the thermal requirements of the microelectronic die 110, as will
be understood to those skilled in the art.
[0025] In another embodiment of the present description, as shown
in FIGS. 9a and 9b, the heat dissipation device may be a
thermoelectric heat dissipation device (i.e., a Peltier effect
device). A thermoelectric heat dissipation device is a solid-state
electric heat pump which utilizes electric current to induce a
Peltier effect creating a heat flux between an interface between
two different conductive materials, thereby transferring heat from
one side of the thermoelectric heat dissipation device to the other
side thereof. The thermoelectric heat dissipation device
(illustrated as element 170) may comprise a first conductive
material layer 172 and a second conductive material layer 174
abutting the first conductive material layer 172, both of which are
disposed within a trench 120. The first conductive material layer
172 may be electrically connected to a first terminal 182 of a
current generating electrical device 180 and the second conductive
material layer 174 may be electrically connected to a second
terminal 184 of the current generating electrical device 180. The
trench 120, the first conductive material layer 172, and the second
conductive material layer 174 may be formed by any known techniques
including those discussed with regard to FIGS. 1-8b.
[0026] As shown in FIG. 10, the microelectronic die 110 may be
attached to a first surface 204 of the microelectronic substrate
202 with a plurality of interconnects 212. The die-to-substrate
interconnects 212, such as soldered interconnects, may extend
between bond pads 118 formed in or on the microelectronic die
active surface 112 of the microelectronic die 110 and substantially
mirror-image bond pads 206 in or on the microelectronic substrate
first surface 204. An underfill material 224, such as an epoxy
material, may be disposed between the microelectronic die active
surface 112 and the microelectronic substrate first surface
204.
[0027] As further shown in FIG. 10, the microelectronic substrate
202 may provide electrical communication routes (illustrated as
dashed lines 208) between the microelectronic die 110 and external
components (not shown). As will be understood to those skilled in
the art, the microelectronic die bond pads 118 are in electrical
communication with integrated circuitry (not shown) within the
microelectronic die 110.
[0028] As still further illustrated in FIG. 10, an integrated heat
spreader 220 may be in thermal contact with the microelectronic die
110, to form a microelectronic system 260. The integrated heat
spreader 220 may have a first surface 222 and an opposing second
surface 224 in thermal contact with the heat dissipation device 150
embedded in the microelectronic die 110. A thermal interface
material 232, such as a thermally conductive grease or polymer, may
be disposed between the integrated heat spreader second surface 224
and the heat dissipation device 150 to facilitate heat transfer
therebetween. The integrated heat spreader 220 may include at least
one footing 242 extending between the integrated heat spreader
second surface 224 and the microelectronic substrate 202, wherein
the integrated heat spreader footing 242 may be attached to the
microelectronic substrate first surface 204 with an adhesive
material 252, such as an epoxy material. The integrated heat
spreader 220 may be made of any appropriate thermally conductive
material, such a metals and alloys, including, but not limited to,
copper, aluminum, and the like. It is understood that the
integrated heat spreader 220 may be utilized as a load
mechanism.
[0029] FIG. 11 is a flow chart of a process 300 of fabricating a
microelectronic structure according to the various embodiments of
the present description. As set forth in block 310, a
microelectronic die may be formed having an active surface and an
opposing back surface. At least one trench may be formed extending
into the microelectronic die from the microelectronic die back
surface, as set forth in block 320. As set forth in block 330, the
at least one trench may be filled with at least one layer of
thermally conductive material.
[0030] FIG. 12 illustrates an embodiment of an electronic
system/device 400, such as a portable computer, a desktop computer,
a mobile telephone, a digital camera, a digital music player, a web
tablet/pad device, a personal digital assistant, a pager, an
instant messaging device, or other devices. The electronic
system/device 400 may be adapted to transmit and/or receive
information wirelessly, such as through a wireless local area
network (DYLAN) system, a wireless personal area network (WAN)
system, and/or a cellular network. The electronic system/device 400
may include a microelectronic motherboard or substrate 410 disposed
within a device housing 420. The microelectronic
motherboard/substrate 410 may have various electronic components
electrically coupled thereto, including a microelectronic device
including a microelectronic die and a heat dissipation device
disposed therein, as described in the present description (see
FIGS. 1-10), and optionally the integrated heat spreader of FIG.
11, all of which are shown generically as element 430. The
microelectronic motherboard 410 may be attached to various
peripheral devices including an input device 450, such as keypad,
and a display device 460, such an LCD display. It is understood
that the display device 460 may also function as the input device,
if the display device 460 is touch sensitive.
[0031] The following examples pertain to further embodiments,
wherein Example 1 is a microelectronic device, comprising a
microelectronic die having an active surface and an opposing back
surface; and at least one heat dissipation device extending into
the microelectronic die from the microelectronic die back
surface.
[0032] In Example 2, the subject matter of Example 1 can optionally
include the heat dissipation device comprising at least one layer
of thermally conductive material within the at least one trench
extending into the microelectronic die.
[0033] In Example 3, the subject matter of Example 2 can optionally
include the at least one layer of thermally conductive material
within the at least one trench comprises a first thermally
conductive material layer abutting a second thermally conductive
material layer.
[0034] In Example 4, the subject matter of Example 3 can optionally
include the first thermally conductive material layer in electrical
contact with a first terminal of a current generating electrical
device and the second thermally conductive material layer in
electrical contact with a second terminal of the current generating
electronic device.
[0035] In Example 5, the subject matter of any of Examples 1 to 4
can optionally include the at least one heat dissipation device
positioned proximate a hot spot location in the microelectronic
die.
[0036] In Example 6, the subject matter of any of Examples 1 to 4
can optionally include the at least one heat dissipation device
comprising a thermally conductive material selected from a group
consisting of copper and silver.
[0037] In Example 7, the subject matter of any of Examples 1 to 4
can optionally include the microelectronic die active surface
electrically connected to a microelectronic substrate.
[0038] In Example 8, the subject matter of any of Examples 1 to 4
can optionally include an integrated heat spreader in thermal
contact with the at least one heat dissipation device.
[0039] In Example 9, the subject matter of any of Examples 1 to 4
can optionally include at least one of a seed layer and a barrier
layer disposed between the microelectronic die and the at least one
heat dissipation device.
[0040] The following examples pertain to further embodiments,
wherein Example 10 is a method of fabricating a heat dissipation
device within a microelectronic die, comprising forming a
microelectronic die having an active surface and an opposing back
surface; forming at least one trench extending into the
microelectronic die from the microelectronic die back surface; and
disposing at least one layer of thermally conductive material
within the at least one trench.
[0041] In Example 11, the subject matter of Example 10 can
optionally include the step of disposing at least one layer of
thermally conductive material within the at least one trench
comprising disposing a first thermally conductive material layer
within the at least one trench and disposing a second thermally
conductive material layer abutting the first thermally conductive
material layer within the at least one trench.
[0042] In Example 12, the subject matter of Example 11 can
optionally include the electrically contacting the first thermally
conductive material layer with a first terminal of a current
generating electrical device and electrically contacting the second
thermally conductive material layer with a second terminal of the
current generating electronic device.
[0043] In Example 13, the subject matter of Example 10 can
optionally include forming at the least one trench extending into
the microelectronic die from the microelectronic die back surface
by a technique selected from the group consisting of etching, ion
bombardment, and laser ablation.
[0044] In Example 14, the subject matter of any of Examples 10 to
13 can optionally include forming at least one of a seed layer and
a barrier layer disposed between the at least one trench and the at
least one thermally conductive material layer.
[0045] In Example 15, the subject matter of any of Examples 10 to
13 can optionally include the step of disposing at least one layer
of thermally conductive material within the at least one trench
comprising patterning a mask with at least one opening
corresponding to the at least one trench; and plating the thermally
conductive material within the at least one trench.
[0046] In Example 16, the subject matter of Example 15 can
optionally include removing the mask.
[0047] In Example 17, the subject matter of any of Examples 10 to
13 can optionally include connecting the microelectronic die active
surface to a microelectronic substrate.
[0048] In Example 18, the subject matter of any of Examples 10 to
13 can optionally include thermally contacting an integrated heat
spreader with the heat dissipation device.
[0049] In Example 19, the subject matter of any of Examples 10 to
13 can optionally include disposing at least one layer of thermally
conductive material selected from a group consisting of copper and
silver.
[0050] In Example 20, the subject matter of any of Examples 10 to
13 can optionally include forming the at least one heat dissipation
device proximate a hot spot location in the microelectronic
die.
[0051] The following examples pertain to further embodiments,
wherein Example 21 is an electronic system, comprising a housing; a
microelectronic substrate disposed within the housing; and a
microelectronic device comprising: a microelectronic die having an
active surface and an opposing back surface electrically attached
to the microelectronic surface by the microelectronic die first
surface; and a heat dissipation device extending into the
microelectronic die from the microelectronic die back surface.
[0052] In Example 22, the subject matter of Example 21 can
optionally include the heat dissipation device comprising at least
one layer of thermally conductive material within the at least one
trench extending into the microelectronic die.
[0053] In Example 23, the subject matter of Example 22 can
optionally include the at least one layer of thermally conductive
material within the at least one trench comprising a first
thermally conductive material layer abutting a second thermally
conductive material layer.
[0054] In Example 24, the subject matter Examples 23 can optionally
include the first thermally conductive material layer in electrical
contact with a first terminal of a current generating electrical
device and the second thermally conductive material layer in
electrical contact with a second terminal of the current generating
electronic device.
[0055] In Example 25, the subject matter of any of Examples 21 to
24 can optionally include the at least one heat dissipation device
positioned proximate a hot spot location in the microelectronic
die.
[0056] In Example 26, the subject matter of any of Examples 21 to
24 can optionally include the at least one heat dissipation device
comprising a thermally conductive material selected from a group
consisting of copper and silver.
[0057] In Example 27, the subject matter of any of Examples 21 to
24 can optionally include an integrated heat spreader in thermal
contact with the at least one heat dissipation device.
[0058] In Example 28, the subject matter of any of Examples 21 to
24 can optionally include at least one of a seed layer and a
barrier layer disposed between the microelectronic die and the at
least one heat dissipation device.
[0059] It is understood that the subject matter of the present
description is not necessarily limited to specific applications
illustrated in FIGS. 1-12. The subject matter may be applied to
other microelectronic device applications, as well as applications
outside of the microelectronic industry, as will be understood to
those skilled in the art.
[0060] Having thus described in detail embodiments of the present
invention, it is understood that the invention defined by the
appended claims is not to be limited by particular details set
forth in the above description, as many apparent variations thereof
are possible without departing from the spirit or scope
thereof.
* * * * *