U.S. patent application number 14/299038 was filed with the patent office on 2014-09-25 for substrate processing apparatus.
The applicant listed for this patent is MITSUBISHI GAS CHEMICAL COMPANY, INC.. Invention is credited to Koji ANDO, Hiroyuki ARAKI, Tomoyuki AZUMA, Kenji YAMADA.
Application Number | 20140283992 14/299038 |
Document ID | / |
Family ID | 46752659 |
Filed Date | 2014-09-25 |
United States Patent
Application |
20140283992 |
Kind Code |
A1 |
AZUMA; Tomoyuki ; et
al. |
September 25, 2014 |
SUBSTRATE PROCESSING APPARATUS
Abstract
A substrate processing apparatus includes a first processing
chamber and a second processing chamber, a first substrate holding
unit that holds a substrate in the first processing chamber, a
chemical solution supply unit that supplies a chemical solution
containing an etching component and a thickening agent to the
substrate held by the first substrate holding unit, a substrate
transfer unit that transfers the substrate from the first
processing chamber to the second processing chamber in a state in
which the chemical solution is held on the substrate, and a second
substrate holding unit that holds a plurality of substrates on each
of which the chemical solution is held in the second processing
chamber.
Inventors: |
AZUMA; Tomoyuki; (Tokyo,
JP) ; YAMADA; Kenji; (Tokyo, JP) ; ARAKI;
Hiroyuki; (Kyoto, JP) ; ANDO; Koji; (Kyoto,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
Tokyo |
|
JP |
|
|
Family ID: |
46752659 |
Appl. No.: |
14/299038 |
Filed: |
June 9, 2014 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
13409879 |
Mar 1, 2012 |
8765002 |
|
|
14299038 |
|
|
|
|
Current U.S.
Class: |
156/345.15 ;
156/345.11 |
Current CPC
Class: |
H01L 21/67028 20130101;
H01L 21/67167 20130101; H01L 21/67075 20130101; H01L 21/6708
20130101; H01L 21/67051 20130101; H01L 21/67253 20130101 |
Class at
Publication: |
156/345.15 ;
156/345.11 |
International
Class: |
H01L 21/67 20060101
H01L021/67 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 4, 2011 |
JP |
2011-048113 |
Claims
1. A substrate processing apparatus comprising: a first processing
chamber and a second processing chamber; a first substrate holding
unit that holds a substrate in the first processing chamber; a
chemical solution supply unit that supplies a chemical solution
containing an etching component and a thickening agent to the
substrate held by the first substrate holding unit; a substrate
transfer unit that transfers the substrate from the first
processing chamber to the second processing chamber in a state in
which the chemical solution is held on the substrate; and a second
substrate holding unit that holds a plurality of substrates on each
of which the chemical solution is held in the second processing
chamber.
2. The substrate processing apparatus according to claim 1, further
comprising: a third processing chamber; a third substrate holding
unit that holds a substrate in the third processing chamber; and a
rinsing liquid supply unit that supplies a rinsing liquid to the
substrate held by the third substrate holding unit, wherein the
substrate transfer unit transfers the substrate from the second
processing chamber to the third processing chamber.
3. The substrate processing apparatus according to claim 1, wherein
the chemical solution supply unit partially supplies the chemical
solution to a major surface of the substrate held by the first
substrate holding unit.
4. The substrate processing apparatus according to claim 3, further
comprising a foreign-matter measuring unit that measures a position
of foreign matters adhering to the major surface of the substrate,
wherein the chemical solution supply unit supplies the chemical
solution into a region in which the foreign matters are contained
in the major surface.
5. The substrate processing apparatus according to claim 4, further
comprising a measuring chamber in which the position of the foreign
matters adhering to the substrate is measured by the foreign-matter
measuring unit, wherein the substrate transfer unit transfers the
substrate from the measuring chamber to the first processing
chamber.
6. The substrate processing apparatus according to claim 3, wherein
the chemical solution supply unit supplies the chemical solution
into a predetermined region of the major surface.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] This invention relates to a substrate processing apparatus
and a substrate processing method for processing substrates.
Examples of substrates to be processed include semiconductor
wafers, substrates for liquid crystal displays, substrates for
plasma displays, substrates for FEDs (Field Emission Displays),
substrates for optical disks, substrates for magnetic disks,
substrates for magneto-optical disks, substrates for photomasks,
ceramic substrates, and substrates for solar cells.
[0003] 2. Description of Related Art
[0004] A substrate, such as a semiconductor wafer or a glass
substrate for a liquid crystal display device, is processed by use
of a processing liquid in a production process in which a
semiconductor device, a liquid crystal display device, or the like
is produced.
[0005] For example, Japanese Published Unexamined Patent
Application No. 2007-318016 discloses a substrate processing
apparatus of the single-substrate processing type that performs
bevel etching. This substrate processing apparatus includes a spin
chuck that horizontally holds and rotates a substrate around a
vertical axis and a lower-surface nozzle that faces the central
portion of a lower surface of the substrate held by the spin chuck.
A chemical solution discharged from the lower-surface nozzle is
supplied to the central portion of the lower surface of the
substrate being rotated. Thereafter, the chemical solution supplied
thereto spreads outwardly along the lower surface of the substrate
by the rotation of the substrate, and turns to the peripheral
portion of an upper surface of the substrate while proceeding along
the peripheral end surface of the substrate. As a result, the
chemical solution is supplied to the whole area of the peripheral
portion of the upper surface of the substrate.
[0006] Likewise, Japanese Published Unexamined Patent Application
No. 2007-142077 discloses a substrate processing apparatus of the
single-substrate processing type that performs bevel etching. This
substrate processing apparatus includes a spin chuck that
horizontally holds and rotates a substrate around a vertical axis
and a peripheral-portion processing nozzle that faces the
peripheral portion of an upper surface of the substrate held by the
spin chuck. A chemical solution discharged from the
peripheral-portion processing nozzle is supplied to the peripheral
portion of the upper surface of the substrate being rotated. As a
result, the chemical solution is supplied to the whole area of the
peripheral portion of the upper surface of the substrate.
[0007] Additionally, U.S. Patent Application Publication No.
2006/0151008 A1 discloses a cleaning method for cleaning a
substrate by use of a highly viscous liquid. In this cleaning
method, a highly viscous liquid is supplied to an upper surface of
a substrate. Thereafter, the substrate starts being rotated. The
liquid supplied thereto moves outwardly on the substrate by the
rotation of the substrate. As a result, the highly viscous liquid
is discharged from the substrate. Foreign matters adhering to the
upper surface of the substrate are discharged from the substrate
along with the highly viscous liquid. As a result, the foreign
matters are removed from the substrate.
[0008] In the substrate processing apparatuses of Japanese
Published Unexamined Patent Application Nos. 2007-318016 and
2007-142077, a chemical solution supplied to the peripheral portion
of the upper surface of the substrate is discharged outwardly by
the rotation of the substrate. Therefore, the chemical solution is
required to be discharged from the nozzle during the processing of
the substrate by use of the chemical solution. Therefore, a state
in which the peripheral portion of the upper surface of the
substrate and the chemical solution are in contact with each other
is maintained, and the chemical solution that has a sufficient
processing capability continues being supplied to the peripheral
portion of the upper surface of the substrate. However, the
consumption of the chemical solution will be increased if the
chemical solution continues being discharged from the nozzle.
[0009] On the other hand, in the cleaning method of U.S. Patent
Application Publication No. 2006/0151008 A1, a highly viscous
liquid is supplied to an upper surface of a substrate. The liquid
is high in viscosity, and hence can be held on the substrate.
Therefore, a state in which the substrate and the liquid are in
contact with each other can be maintained even if a highly viscous
liquid does not continue being supplied to the substrate.
Therefore, the consumption of the liquid can be reduced. However,
in this cleaning method, foreign matters cannot be sometimes
removed from the substrate if adhesion of the foreign matters to
the upper surface of the substrate is extremely firm.
[0010] In order to reduce the consumption of a chemical solution
and to reliably remove foreign matters from a substrate, it is
possible to, for example, employ a method for supplying the
substrate with a highly viscous chemical solution capable of
dissolving the substrate. According to this method, the substrate
can be allowed to hold the chemical solution because the chemical
solution has high viscosity. Therefore, the consumption of the
chemical solution can be reduced. Additionally, foreign matters
adhering to the substrate can be lifted off from the substrate
along with a portion of the substrate by allowing the substrate and
the chemical solution to react together and hence dissolving the
portion of the substrate. Therefore, the foreign matters can be
reliably removed from the substrate.
[0011] However, in this method, the chemical solution contiguous to
the substrate is not replaced by a new chemical solution, and
therefore there is a case in which much time is consumed to allow
the substrate and the chemical solution to sufficiently react
together, and hence a satisfactory processing speed cannot be
secured. It is conceivable that the substrate is located at that
place (i.e., the position to which the chemical solution has been
supplied) until the substrate and the chemical solution
sufficiently react together, and, if so, a highly viscous chemical
solution cannot be supplied to a subsequent substrate until the
substrate to which the chemical solution has been supplied is taken
out. Therefore, throughput (i.e., the number of substrates
processed per unit time) will be decreased.
[0012] It is therefore an object of the present invention to
provide a substrate processing apparatus and a substrate processing
method that are capable of reducing the consumption of a chemical
solution and capable of restraining or preventing a decrease in
throughput.
SUMMARY OF THE INVENTION
[0013] One embodiment of the present invention provides a substrate
processing apparatus including a first processing chamber and a
second processing chamber, a first substrate holding unit that
holds a substrate in the first processing chamber, a chemical
solution supply unit that supplies a chemical solution containing
an etching component and a thickening agent to the substrate held
by the first substrate holding unit, a substrate transfer unit that
transfers the substrate from the first processing chamber to the
second processing chamber in a state in which the chemical solution
is held on the substrate, and a second substrate holding unit that
holds a plurality of substrates on each of which the chemical
solution is held in the second processing chamber.
[0014] According to this structure, a chemical solution containing
an etching component and a thickening agent is supplied to a
substrate held by the first substrate holding unit in the first
processing chamber. Thereafter, the substrate is transferred by the
substrate transfer unit from the first processing chamber to the
second processing chamber in a state in which the chemical solution
is held on the substrate. This operation is repeatedly performed,
and a plurality of substrates on each of which the chemical
solution is held are carried into the second processing chamber.
The substrates carried into the second processing chamber are held
by the second substrate holding unit in a state of holding the
chemical solution. The substrates held by the second substrate
holding unit are carried out of the second processing chamber in
order of arrival of a stay time in the second processing chamber at
a predetermined time. The substrates are processed without
hindrance in this way.
[0015] The viscosity of a chemical solution supplied to the
substrate is increased by adding a thickening agent. In other
words, the flowability of a chemical solution is lowered by adding
a thickening agent. Therefore, a state in which the substrate is
covered with a chemical solution is maintained even if the chemical
solution does not continue being supplied to the substrate.
Therefore, the consumption of the chemical solution can be reduced.
Additionally, an etching component is contained in the chemical
solution, and therefore foreign matters, such as particles,
adhering to a substrate can be lifted off from the substrate along
with a portion of the substrate, or foreign matters can be removed
from the substrate by being dissolved by the etching component. As
a result, such foreign matters can be reliably removed from the
substrate.
[0016] As mentioned above, the substrate to which the chemical
solution has been supplied in the first processing chamber is
transferred from the first processing chamber to the second
processing chamber in a state of holding the chemical solution, and
is held in the second processing chamber during a predetermined
time in a state of holding the chemical solution. Therefore, a
period of time during which the substrate and the chemical solution
react to each other is secured sufficiently. Additionally, the
reaction of the substrate and the chemical solution to each other
is also performed outside the first processing chamber, and
therefore the chemical solution can be supplied to a subsequent
substrate in the first processing chamber during the progression of
the reaction of the substrate and the chemical solution to each
other. Therefore, a decrease in throughput (i.e., the number of
substrates to be processed per unit time) can be restrained or
prevented.
[0017] The substrate processing apparatus may further include a
third processing chamber, a third substrate holding unit that holds
a substrate in the third processing chamber, and a rinsing liquid
supply unit that supplies a rinsing liquid to a substrate held by
the third substrate holding unit. In this case, the substrate
transfer unit may be arranged to transfer a substrate from the
second processing chamber to the third processing chamber.
[0018] According to this structure, a substrate held in the second
processing chamber during a predetermined time is transferred by
the substrate transfer unit from the second processing chamber to
the third processing chamber. In other words, a substrate that has
satisfactorily reacted to a chemical solution in the second
processing chamber is carried into the third processing chamber.
Thereafter, a rinsing liquid is supplied to the substrate held by
the third substrate holding unit in the third processing chamber.
As a result, the chemical solution held on the substrate is rinsed
away by the rinsing liquid. As mentioned above, the supply of the
chemical solution, the reaction of the substrate and the chemical
solution to each other, and the removal of the chemical solution
are performed in the different processing chambers, respectively,
and therefore the structure in each of the processing chambers can
be prevented from being complicated.
[0019] The chemical solution supply unit may be arranged to supply
the chemical solution to the whole area of the major surface of the
substrate held by the first substrate holding unit. The chemical
solution supply unit may be arranged to partially supply the
chemical solution to the major surface of the substrate held by the
first substrate holding unit. If the substrate is a substrate (for
example, a bare wafer) that does not have a thin film on its
surface layer, the major surface of the substrate is a surface of
the substrate itself. If the substrate is a substrate that has a
thin film on its surface layer, the major surface of the substrate
may be an outer surface of the thin film, or may be an outer
surface of the bed of the thin film. When the chemical solution is
partially supplied to the major surface of the substrate, the
consumption of the chemical solution can be made smaller than when
the chemical solution is supplied to the whole area of the major
surface of the substrate.
[0020] If the chemical solution is partially supplied to the major
surface of the substrate, the region into which the chemical
solution is supplied may be a region determined for each substrate.
Specifically, the substrate processing apparatus may further
include a foreign-matter measuring unit that measures a position of
foreign matters adhering to the major surface of the substrate, and
the chemical solution supply unit may be arranged to supply the
chemical solution into a region in which foreign matters are
contained in the major surface. According to this structure, the
chemical solution is reliably supplied into the region in which
foreign matters are contained, and therefore the foreign matters
adhering to the substrate can be reliably removed. Additionally,
the chemical solution is supplied only into the region in which
foreign matters are contained, and therefore the chemical solution
can be restrained or prevented from being supplied into a region
that has no need for the supply of the chemical solution.
Therefore, the region that has no need for the supply of the
chemical solution can be restrained or prevented from being
affected by the chemical solution.
[0021] When the position of foreign matters adhering to the major
surface of the substrate is measured by the foreign-matter
measuring unit, the foreign matters may be measured in any one of
the first, second, and third processing chambers, or may be
measured in a place differing from these processing chambers.
Specifically, the substrate processing apparatus may further
include a measuring chamber in which the position of foreign
matters adhering to the substrate is measured by the foreign-matter
measuring unit, and the substrate transfer unit may be arranged to
transfer the substrate from the measuring chamber to the first
processing chamber. According to this structure, foreign matters
are measured by the foreign-matter measuring unit in a place
differing from the first, second, and third processing chambers,
and therefore the structure in each of the processing chambers can
be restrained or prevented from being complicated.
[0022] When a chemical solution is partially supplied to the major
surface of the substrate, the region into which the chemical
solution is supplied may be a predetermined region. Specifically,
the chemical solution supply unit may be arranged to supply the
chemical solution into a predetermined region of the major surface.
The predetermined region of the major surface may be a peripheral
portion of the major surface. According to this structure, the
region into which the chemical solution is supplied is
predetermined, and therefore the position to which the chemical
solution is supplied is not required to be changed for each
substrate.
[0023] Another embodiment of the present invention provides a
substrate processing method including a chemical solution supply
step of supplying a chemical solution containing an etching
component and a thickening agent to a substrate and allowing the
substrate to hold the chemical solution, a transfer step of
transferring the substrate in a state in which the chemical
solution is held on the substrate after the chemical solution
supply step is performed, and a reaction processing step of
promoting a reaction of the substrate on which the chemical
solution is held and the chemical solution to each other after the
transfer step is performed. The etching component may be a mixture
of hydrofluoric acid and hydrogen peroxide or a mixture of ammonium
hydroxide and hydrogen peroxide. The thickening agent may be one or
more selected from methylcellulose, carboxymethyl cellulose,
polyethylene glycol, sodium polyacrylate, and polyvinyl alcohol.
According to this method, the same effect as the above-mentioned
effect can be fulfilled.
[0024] The aforementioned or other objects, features, and effects
of the present invention will be clarified by the following
description of embodiments given below with reference to the
accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0025] FIG. 1 is a illustrated plan view showing a layout of a
substrate processing apparatus according to a first embodiment of
the present invention.
[0026] FIG. 2 is a schematic view showing a structure of a chemical
solution supply unit according to the first embodiment of the
present invention.
[0027] FIG. 3 is a plan view of a chemical solution nozzle and a
structure relative to this nozzle according to the first embodiment
of the present invention.
[0028] FIG. 4 is a side view of the chemical solution nozzle and
the structure relative to this nozzle according to the first
embodiment of the present invention.
[0029] FIG. 5 is a schematic view showing a structure of a reaction
unit according to the first embodiment of the present
invention.
[0030] FIG. 6 is a schematic view showing a structure of a rinse
unit according to the first embodiment of the present
invention.
[0031] FIG. 7 is a view for describing one example of substrate
processing performed by the substrate processing apparatus
according to the first embodiment of the present invention.
[0032] FIG. 8 is a illustrated plan view showing a layout of a
substrate processing apparatus according to a second embodiment of
the present invention.
[0033] FIG. 9 is a schematic side view showing a structure of a
foreign-matter measuring unit according to the second embodiment of
the present invention.
[0034] FIG. 10 is a view for describing one example of substrate
processing performed by the substrate processing apparatus
according to the second embodiment of the present invention.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
First Embodiment
[0035] FIG. 1 is a illustrated plan view showing a layout of a
substrate processing apparatus 1 according to a first embodiment of
the present invention.
[0036] The substrate processing apparatus 1 is a substrate
processing apparatus of the single-substrate processing type that
processes circular substrates W, such as semiconductor wafers, one
by one by use of a processing liquid, such as a chemical solution
or a rinsing liquid. The substrate processing apparatus 1 includes
an indexer block 2, a processing block 3 joined to the indexer
block 2, and a control device 4 that controls the operation of
devices provided in the substrate processing apparatus 1 or
controls the opening and closing of valves.
[0037] The indexer block 2 includes a carrier holding section 5, an
indexer robot IR (substrate transfer unit), and an IR moving
mechanism 6. The carrier holding section 5 holds carriers C that
can contain a plurality of substrates W. The carriers C are held by
the carrier holding section 5 in a state of being arranged in a
horizontal carrier array direction U. The IR moving mechanism 6
moves the indexer robot IR in the carrier array direction U. The
indexer robot IR performs a carry-in operation for carrying a
substrate W into the carrier C held by the carrier holding section
5 and a carry-out operation for carrying a substrate W out of the
carrier C. The substrate W is transferred by the indexer robot IR
in a horizontal posture.
[0038] On the other hand, the processing block 3 includes a
plurality of (for example, four or more) processing units 7 that
process substrates W and a center robot CR (a substrate transfer
unit). The processing units 7 are arranged so as to surround the
center robot CR when viewed planarly. The processing units 7
include a chemical solution supply unit 7a that supplies a chemical
solution to a substrate W, a reaction unit 7b that promotes a
reaction of the substrate W and the chemical solution to each
other, and a rinse unit 7c that rinses away the chemical solution
supplied to the substrate W. The center robot CR performs a
carry-in operation for carrying substrates W into the processing
unit 7 and a carry-out operation for carrying substrates W out of
the processing unit 7. In addition, the center robot CR transfers
substrates W between the processing units 7. Each substrate W is
transferred by the center robot CR in a horizontal posture. The
center robot CR receives substrates W from the indexer robot IR,
and delivers substrates W to the indexer robot IR.
[0039] FIG. 2 is a schematic view showing a structure of a chemical
solution supply unit 7a according to the first embodiment of the
present invention. FIG. 3 is a plan view of a chemical solution
nozzle 9 and a structure relative to this nozzle according to the
first embodiment of the present invention. FIG. 4 is a side view of
the chemical solution nozzle 9 and the structure relative to this
nozzle according to the first embodiment of the present
invention.
[0040] The chemical solution supply unit 7a includes a first spin
chuck 8 (first substrate holding unit) that horizontally holds and
rotates a substrate W, a chemical solution nozzle 9 (chemical
solution supply unit) that supplies a chemical solution to the
upper surface of a substrate W held by the first spin chuck 8, a
covering member 10 disposed near the upper surface of a substrate W
held by the first spin chuck 8, a nitrogen gas nozzle 11 that
supplies nitrogen gas between a substrate W and the covering member
10, and a first chamber 12 (first processing chamber) that contains
the first spin chuck 8, the chemical solution nozzle 9, the
covering member 10, and the nitrogen gas nozzle 11.
[0041] The first spin chuck 8 includes a disk-shaped spin base 13
that is rotatable around a vertical axis passing through the center
of a substrate W while horizontally holding the substrate W and a
spin motor 14 that rotates the spin base 13 around the vertical
axis. The first spin chuck 8 may be a gripping-type chuck that
grips a substrate W in a horizontal direction and holds the
substrate W horizontally, or may be a vacuum-type chuck that
horizontally holds a substrate W by sucking a rear surface (lower
surface), which is a non-device forming surface, of the substrate
W. In the first embodiment, the first spin chuck 8 is a
gripping-type chuck.
[0042] The chemical solution nozzle 9 is connected to a chemical
solution supply pipe 16 with a chemical solution valve 15
interposed therein. The supply of a chemical solution to the
chemical solution nozzle 9 is controlled by opening and closing the
chemical solution valve 15. A nozzle moving mechanism 17 moves the
chemical solution nozzle 9 between a processing position (shown in
FIG. 2 to FIG. 4) and a waiting position. The processing position
is a position at which a chemical solution discharged from the
chemical solution nozzle 9 is supplied to the upper surface of a
substrate W held by the first spin chuck 8, and the waiting
position is a position away from the first spin chuck 8. The
processing position of the chemical solution nozzle 9 in the first
embodiment is a predetermined position at which a chemical solution
discharged from the chemical solution nozzle 9 is supplied to the
peripheral portion of the upper surface of a substrate W. Without
being limited to the predetermined position, the processing
position of the chemical solution nozzle 9 may include a plurality
of positions at which a chemical solution discharged from the
chemical solution nozzle 9 is supplied to the upper surface of a
substrate W. In other words, the processing position of the
chemical solution nozzle 9 may be a predetermined region in which a
chemical solution discharged from the chemical solution nozzle 9 is
supplied to any one of a plurality of positions on the upper
surface of a substrate W.
[0043] The chemical solution supplied to the chemical solution
nozzle 9 is a highly viscous etchant whose viscosity has been
adjusted by a thickening agent. The viscosity of the chemical
solution is adjusted so that the chemical solution stays at a
position on the substrate W, to which the chemical solution has
been supplied, almost without moving from this position, for
example, when the chemical solution is supplied to the upper
surface of the substrate W rotating at a rotational speed of
several hundred revolutions per minute (rpm) or less at room
temperature (20.degree. C. to 30.degree. C.). A specific viscosity
range of the chemical solution is 100 mPas to 100 Pas, preferably 1
to 70 Pas, and more preferably 3 to 50 Pas. The chemical solution
contains an etching component and a thickening agent. The etching
component is a liquid that dissolves a substrate W or foreign
matters, such as particles, adhering to the substrate W. The
substrate W mentioned here may be a substrate (for example, a bare
wafer) that has no thin film on its surface layer, or may be a
substrate that has a thin film on its surface layer. The etching
component that dissolves a substrate W may be a component that
dissolves the substrate itself (for example, bare wafer), or may be
a component that dissolves a thin film formed on the surface layer
of the substrate W. The thickening agent is mixed with the etching
component. One example of the chemical solution is a mixture of a
mixture of hydrofluoric acid and hydrogen peroxide or a mixture of
ammonium hydroxide and hydrogen peroxide with at least one of
methylcellulose, carboxymethyl cellulose, polyethylene glycol,
sodium polyacrylate, and polyvinyl alcohol. Both the mixture of
hydrofluoric acid and hydrogen peroxide and the mixture of ammonium
hydroxide and hydrogen peroxide are one example of the etching
component, and at least one of methylcellulose, carboxymethyl
cellulose, polyethylene glycol, sodium polyacrylate, and polyvinyl
alcohol is one example of the thickening agent.
[0044] The covering member 10 is large enough to cover at least one
portion of the peripheral portion of the upper surface of the
substrate W. The covering member 10 may be larger than the
substrate W when viewed planarly, or may be smaller than the
substrate W when viewed planarly. In the first embodiment, the
covering member 10 is a plate-like member smaller than the
substrate W when viewed planarly. The covering member 10 has a flat
lower surface. A moving mechanism (not shown) moves the covering
member 10 between a processing position (shown in FIG. 2 to FIG. 4)
and a waiting position. The processing position is a position at
which the lower surface of the covering member 10 is brought close
to the upper surface of the substrate W and at which a portion of
the peripheral portion of the upper surface of the substrate W is
covered with the covering member 10. The waiting position is a
position away from the first spin chuck 8. The processing position
of the covering member 10 is disposed inside the processing
position of the chemical solution nozzle 9 (in a direction
approaching the rotational axis of the substrate W). The processing
position of the covering member 10 and the processing position of
the chemical solution nozzle 9 are near each other. Therefore, the
covering member 10 is placed inside the chemical solution nozzle 9,
and the chemical solution nozzle 9 and the covering member 10 are
near each other in a state in which the chemical solution nozzle 9
and the covering member 10 are in their respective processing
positions. The chemical solution nozzle 9 may be arranged to be
held by the covering member 10 and be moved together with the
covering member 10.
[0045] The nitrogen gas nozzle 11 is connected to a nitrogen gas
supply pipe 19 with a nitrogen gas valve 18 interposed therein. The
supply of nitrogen gas to the nitrogen gas nozzle 11 is controlled
by opening and closing the nitrogen gas valve 18. The nitrogen gas
nozzle 11 is held by the covering member 10. Therefore, the
nitrogen gas nozzle 11 moves together with the covering member 10.
The nitrogen gas nozzle 11 is arranged so that, when nitrogen gas
is discharged in a state in which the covering member 10 is in the
processing position, nitrogen gas discharged therefrom flows
outwardly (in a direction receding from the rotational axis of the
substrate W) between the lower surface of the covering member 10
and the upper surface of the substrate W. The nitrogen gas nozzle
11 may be held independently of the covering member 10 without
being held by the covering member 10.
[0046] The first chamber 12 includes a first partition wall 21
having a first opening 20 and a first gate shutter 22 with which
the first opening 20 is covered. The first gate shutter 22 is
disposed outside the first partition wall 21. A first gate
opening-closing mechanism 23 is connected to the first gate shutter
22. The first gate opening-closing mechanism 23 moves the first
gate shutter 22 between a closed position at which the first
opening 20 is closed by the first gate shutter 22 and an open
position at which the first opening 20 is opened. The first gate
shutter 22 is beforehand placed at the open position when the
substrate W is carried into the first chamber 12 or when the
substrate W is carried out of the first chamber 12. The substrate W
is carried into and out of the first chamber 12 in a state in which
the first opening 20 is opened. Thereafter, the first gate shutter
22 is placed at the closed position, and the first opening 20 is
closed by the first gate shutter 22.
[0047] FIG. 5 is a schematic view showing a structure of the
reaction unit 7b according to the first embodiment of the present
invention.
[0048] The reaction unit 7b includes a plurality of substrate
holding members 24 (second substrate holding unit) that
horizontally hold substrates W, a second chamber 25 (second
processing chamber) in which the substrate holding members 24 are
contained, and a heater 26 that heats the inside of the second
chamber 25.
[0049] The plurality of substrate holding members 24 are arranged
to horizontally hold a plurality of substrates W, respectively. The
substrate holding members 24 may hold the substrates W so that the
substrates W are arrayed in an up-down direction in a horizontal
posture, or may hold the substrates W so that the substrates W are
arrayed in a horizontal direction in a horizontal posture.
Additionally, the substrate holding members 24 may hold the
substrates W by supporting the substrates W from below, or may hold
the substrates W by horizontally gripping the substrates W. In
other words, as long as the substrates W are horizontally held, the
substrate holding members 24 do not have restrictions on how to
hold the substrates W. The heat of the heater 26 is transmitted to
the substrates W held by the substrate holding members 24. As a
result, the substrates W are heated in the second chamber 25.
[0050] The second chamber 25 includes a second partition wall 28
having a second opening 27 and a second gate shutter 29 with which
the second opening 27 is covered. The second gate shutter 29 is
disposed outside the second partition wall 28. A second gate
opening-closing mechanism 30 is connected to the second gate
shutter 29. The second gate opening-closing mechanism 30 moves the
second gate shutter 29 between a closed position at which the
second opening 27 is closed by the second gate shutter 29 and an
open position at which the second opening 27 is opened. The second
gate shutter 29 is beforehand placed at the open position when the
substrate W is carried into the second chamber 25 or when the
substrate W is carried out of the second chamber 25. The substrate
W is carried into and out of the second chamber 25 in a state in
which the second opening 27 is opened. Thereafter, the second gate
shutter 29 is placed at the closed position, and the second opening
27 is closed by the second gate shutter 29.
[0051] FIG. 6 is a schematic view showing a structure of the rinse
unit 7c according to the first embodiment of the present
invention.
[0052] The rinse unit 7c includes a third spin chuck 31 (third
substrate holding unit) that horizontally holds and rotates a
substrate W, a rinsing liquid nozzle 32 (rinsing liquid supply
unit) that supplies a rinsing liquid to the upper surface of the
substrate W held by the third spin chuck 31, and a third chamber 33
(third processing chamber) that contains the third spin chuck 31
and the rinsing liquid nozzle 32.
[0053] The third spin chuck 31 includes a disk-shaped spin base 13
that is rotatable around a vertical axis passing through the center
of a substrate W while horizontally holding the substrate W and a
spin motor 14 that rotates the spin base 13 around the vertical
axis. The third spin chuck 31 may be a gripping-type chuck, or may
be a vacuum-type chuck. In the first embodiment, the third spin
chuck 31 is a gripping-type chuck.
[0054] The rinsing liquid nozzle 32 is connected to a rinsing
liquid supply pipe 35 with a rinsing liquid valve 34 interposed
therein. The supply of the rinsing liquid to the rinsing liquid
nozzle 32 is controlled by opening and closing the rinsing liquid
valve 34. A moving mechanism (not shown) moves the rinsing liquid
nozzle 32 between a processing position (shown in FIG. 6) and a
waiting position. The processing position is a position at which a
rinsing liquid discharged from the rinsing liquid nozzle 32 is
supplied to the central portion of the upper surface of a substrate
W held by the third spin chuck 31, and the waiting position is a
position away from the third spin chuck 31. Pure water (DIW:
Deionized water), carbonated water, electrolyzed ion water,
hydrogen water, ozone water, or aqueous hydrochloric acid of dilute
concentration (e.g., about 10 to 100 ppm) can be mentioned as the
rinsing liquid supplied to the rinsing liquid nozzle 32.
[0055] The third chamber 33 includes a third partition wall 37
having a third opening 36 and a third gate shutter 38 with which
the third opening 36 is covered. The third gate shutter 38 is
disposed outside the third partition wall 37. A third gate
opening-closing mechanism 39 is connected to the third gate shutter
38. The third gate opening-closing mechanism 39 moves the third
gate shutter 38 between a closed position at which the third
opening 36 is closed by the third gate shutter 38 and an open
position at which the third opening 36 is opened. The third gate
shutter 38 is beforehand placed at the open position when the
substrate W is carried into the third chamber 33 or when the
substrate W is carried out of the third chamber 33. The substrate W
is carried into and out of the third chamber 33 in a state in which
the third opening 36 is opened. Thereafter, the third gate shutter
38 is placed at the closed position, and the third opening 36 is
closed by the third gate shutter 38.
[0056] FIG. 7 is a view for describing one example of processing
the substrate W performed by the substrate processing apparatus 1
according to the first embodiment of the present invention.
Hereinafter, reference is made to FIG. 1 and FIG. 7.
[0057] The control device 4 allows the indexer robot IR to carry
out unprocessed substrates W contained in the carrier C.
Thereafter, the control device 4 moves the substrates W carried out
of the carrier C from the indexer robot IR to the center robot CR.
Thereafter, the control device 4 allows the center robot CR to
carry the substrate W delivered to the center robot CR into the
chemical solution supply unit 7a. As a result, each substrate W is
placed on the first spin chuck 8 as shown in FIG. 7. When the
substrate W is placed on the first spin chuck 8, the control device
4 locates the chemical solution nozzle 9 and the covering member 10
at their respective waiting positions.
[0058] Thereafter, a chemical solution supply process in which a
chemical solution is supplied to the peripheral portion of the
upper surface of the substrate W is performed as shown in FIG. 7.
Specifically, the control device 4 controls the spin motor 14 and
allows the first spin chuck 8 to start the rotation of the
substrate W. Thereafter, the control device 4 moves the chemical
solution nozzle 9 and the covering member 10 to their respective
processing positions. As a result, the chemical solution nozzle 9,
the covering member 10, and the nitrogen gas nozzle 11 move above
the peripheral portion of the upper surface of the substrate W, and
the lower surface of the covering member 10 is brought close to the
peripheral portion of the upper surface of the substrate W.
Thereafter, the control device 4 successively opens the nitrogen
gas valve 18 and the chemical solution valve 15, and allows the
nitrogen gas nozzle 11 and the chemical solution nozzle 9 to
discharge nitrogen gas and a chemical solution, respectively, while
the substrate W is being rotated by the first spin chuck 8.
[0059] Nitrogen gas discharged from the nitrogen gas nozzle 11
flows outwardly between the lower surface of the covering member 10
and the upper surface of the substrate W. The chemical solution
nozzle 9 located at the processing position discharges a chemical
solution toward a portion of the peripheral portion of the upper
surface of the substrate W. The control device 4 rotates the
substrate W while discharging the chemical solution from the
chemical solution nozzle 9. Therefore, the chemical solution
discharged from the chemical solution nozzle 9 is supplied to the
peripheral portion of the upper surface of the substrate W over the
whole circumference. As a result, the chemical solution is supplied
to the whole area of the peripheral portion of the upper surface of
the substrate W. The chemical solution has high viscosity, and
therefore the chemical solution supplied from the chemical solution
nozzle 9 to the substrate W hardly moves from the solution-supplied
position and stays at this position. Therefore, a state in which
the chemical solution is held in the whole area of the peripheral
portion of the upper surface of the substrate W is maintained. The
peripheral portion of the upper surface of the substrate W is
etched by contact with the chemical solution.
[0060] The control device 4 allows the nitrogen gas nozzle 11 to
discharge nitrogen gas while a chemical solution is being
discharged from the chemical solution nozzle 9. Therefore, the
chemical solution has high volatility, and, even if gas of the
chemical solution is generated between the chemical solution nozzle
9 and the substrate W, this gas is restrained or prevented from
moving inwardly by nitrogen gas flowing outwardly. Especially near
the chemical solution nozzle 9, the chemical solution and air are
in contact with each other between the chemical solution nozzle 9
and the chemical solution held on the substrate W, in addition to
the chemical solution held on the substrate W. Therefore, the area
in which the chemical solution and air are in contact with each
other near the chemical solution nozzle 9 is greater than in other
regions, and chemical solution gas is generated more easily than in
other regions. Therefore, the covering member 10 is disposed near
the chemical solution nozzle 9, and nitrogen gas is supplied
between the covering member 10 and the substrate W, and, as a
result, a region inside the peripheral portion of the upper surface
of the substrate W can be efficiently restrained or prevented from
being exposed to the chemical solution gas.
[0061] When a predetermined period of time elapses after the
nitrogen gas valve 18 and the chemical solution valve 15 have been
opened, the control device 4 allows the nitrogen gas valve 18 and
the chemical solution valve 15 to be closed, so that the chemical
solution and the nitrogen gas stop being discharged. Furthermore,
the control device 4 controls the spin motor 14, and allows the
first spin chuck 8 to stop the rotation of the substrate W.
Thereafter, the control device 4 allows the center robot CR to
carry the substrate W held by the first spin chuck 8 out of the
chemical solution supply unit 7a. Thereafter, the control device 4
allows the center robot CR to carry the substrate W carried out of
the chemical solution supply unit 7a into the reaction unit 7b. The
substrate W to which the chemical solution has been supplied is
transferred from the chemical solution supply unit 7a to the
reaction unit 7b in a horizontal posture. Accordingly, the
substrate W is transferred from the chemical solution supply unit
7a to the reaction unit 7b in a state in which the chemical
solution is held on the substrate W.
[0062] Thereafter, as shown in FIG. 7, a reaction process in which
the reaction of the substrate W and the chemical solution to each
other is promoted is performed in a state in which the chemical
solution is held on the substrate W. Specifically, the control
device 4 allows the center robot CR and any one of the substrate
holding members 24 to horizontally hold the substrate W carried out
of the chemical solution supply unit 7a. As a result, as shown in
FIG. 7, the substrate W is horizontally held by the substrate
holding member 24 in a state in which the chemical solution is held
on the peripheral portion of the upper surface of the substrate W.
The substrate W held on the substrate holding member 24 is held in
the reaction unit 7b during a predetermined time. The reaction of
the substrate W and the chemical solution to each other progresses
during this predetermined time, and the peripheral portion of the
upper surface of the substrate W is etched. Therefore, if foreign
matters adhere to the peripheral portion of the upper surface of
the substrate W, the foreign matters are lifted off from the
substrate W along with a portion of the substrate W, or the
chemical solution dissolves the foreign matters, so that the
foreign matters are removed from the substrate W. The control
device 4 may allow the heater 26 to heat the substrate W and the
chemical solution held on the substrate W while the substrate W is
being held in the reaction unit 7b. If the activity of the chemical
solution becomes higher correspondingly to an increase in
temperature, the processing time of the substrate W by use of the
chemical solution can be shortened by heating the chemical solution
and the substrate W. The ordinary processing time is 3 minutes to
12 hours, preferably 10 minutes to 2 hours, and the processing
temperature is 15 to 100.degree. C., preferably 20 to 60.degree.
C., depending on the kind of foreign matters and the degree of
adhesion.
[0063] Only the carry-in operation of substrates W into the
reaction unit 7b is performed at an initial step at which
substrates W start being processed by the substrate processing
apparatus 1. When the number of substrates W carried into the
reaction unit 7b reaches a predetermined number of substrates W,
i.e., reaches two or more, the control device 4 allows a plurality
of substrates W to be carried out in order of arrival from a
substrate W whose stay time in the reaction unit 7b has first
arrived at a predetermined time. In other words, when the number of
substrates W carried into the reaction unit 7b reaches a
predetermined number, the control device 4 gives instructions to
alternately and repeatedly perform a carry-in operation in which a
single substrate W is carried into the reaction unit 7b by the
center robot CR and a carry-out operation in which a single
substrate W held in the reaction unit 7b during a predetermined
time is carried out of the reaction unit 7b by the center robot CR.
Thereafter, according to instructions given by the control device
4, the substrate W carried out of the reaction unit 7b is carried
into the rinse unit 7c by the center robot CR. As a result, as
shown in FIG. 7, the substrate W is placed on the third spin chuck
31. When the substrate W is placed on the third spin chuck 31, the
control device 4 allows the rinsing liquid nozzle 32 to be located
at the waiting position.
[0064] Thereafter, as shown in FIG. 7, a rinsing liquid (for
example, deionized water) is supplied to the substrate W, and a
rinsing process for rinsing away the chemical solution held on the
peripheral portion of the upper surface of the substrate W is
performed. Specifically, the control device 4 controls the spin
motor 14, and allows the third spin chuck 31 to start rotating the
substrate W. Thereafter, the control device 4 gives instructions to
open the rinsing liquid valve 34 and to discharge a rinsing liquid
from the rinsing liquid nozzle 32 toward a central portion of the
upper surface of the substrate W while rotating the substrate W by
the third spin chuck 31. The rinsing liquid discharged from the
rinsing liquid nozzle 32 is supplied to the central portion of the
upper surface of the substrate W, and spreads outwardly along the
upper surface of the substrate W while receiving a centrifugal
force produced by the rotation of the substrate W. As a result, the
rinsing liquid is supplied to the whole area of the upper surface
of the substrate W, and the chemical solution held on the
peripheral portion of the upper surface of the substrate W is
rinsed away. Furthermore, foreign matters that have lifted off from
the peripheral portion of the upper surface of the substrate W
along with a portion of the substrate W by the reaction of the
substrate W and the chemical solution to each other or foreign
matters dissolved by the chemical solution are rinsed away by the
rinsing liquid. As a result, the foreign matters are removed from
the substrate W, and the substrate W is cleaned. When a
predetermined time elapses after the rinsing liquid valve 34 is
opened, the control device 4 closes the rinsing liquid valve 34,
and stops discharging the rinsing liquid from the rinsing liquid
nozzle 32.
[0065] Thereafter, as shown in FIG. 7, spin drying for drying the
substrate W is performed. Specifically, the control device 4
controls the spin motor 14, and rotates the substrate W at a high
rotational speed (for example, several thousand revolutions per
minute (rpm)). As a result, a great centrifugal force acts on the
rinsing liquid adhering to the substrate W, and this rinsing liquid
is shaken off outwardly from the substrate W. Therefore, the
rinsing liquid is removed from the substrate W, and the substrate W
is dried. After the spin drying is performed during a predetermined
time, the control device 4 controls the spin motor 14, and stops
the rotation of the substrate W by the third spin chuck 31.
Thereafter, the control device 4 allows the center robot CR to
carry the substrate W held by the third spin chuck 31 out of the
rinse unit 7c.
[0066] After the substrate W is carried out of the rinse unit 7c,
the control device 4 gives instructions to move the substrate W
carried out of the rinse unit 7c from the center robot CR to the
indexer robot IR. Thereafter, the control device 4 allows the
indexer robot IR to carry the substrate W delivered to the indexer
robot IR into the carrier C. A series of process steps performed by
the substrate processing apparatus 1 are ended in this way. The
control device 4 gives instructions to repeatedly perform the
above-mentioned operations and to process a plurality of substrates
W one by one.
[0067] As described above, in the first embodiment, a chemical
solution containing an etching component and a thickening agent is
supplied to a substrate W held by the first spin chuck 8 in the
chemical solution supply unit 7a (first chamber 12). Thereafter,
the substrate W is transferred by the center robot CR from the
chemical solution supply unit 7a to the reaction unit 7b (second
chamber 25) in a state in which the chemical solution is held on
the substrate W. This operation is repeatedly performed, and a
plurality of substrates W on each of which the chemical solution is
held are carried into the reaction unit 7b. The substrates W
carried into the reaction unit 7b are held on a plurality of
substrate holding members 24, respectively, in a state of holding
the chemical solution. The substrates W held on the substrate
holding members 24, respectively, are carried out of the reaction
unit 7b in order of arrival of a stay time in the reaction unit 7b
at a predetermined time. The substrates W are processed without
hindrance in this way.
[0068] The viscosity of a chemical solution supplied to the
substrate W is increased by adding a thickening agent. In other
words, the flowability of a chemical solution is lowered by adding
a thickening agent. Therefore, a state in which the substrate W is
covered with a chemical solution is maintained even if the chemical
solution does not continue being supplied to the substrate W.
Therefore, the consumption of the chemical solution can be reduced.
Additionally, the amount of the chemical solution to be wasted can
be reduced by reducing the consumption of the chemical solution.
Additionally, an etching component is contained in the chemical
solution, and therefore foreign matters, such as particles,
adhering to a substrate W can be lifted off from the substrate W
along with a portion of the substrate W, or foreign matters can be
dissolved by the chemical solution. As a result, such foreign
matters can be reliably removed from the substrate W. Additionally,
the viscosity of the chemical solution is increased, and therefore
the substrate W can be transferred in a state in which the chemical
solution is held on the substrate W.
[0069] As mentioned above, the substrate W to which the chemical
solution has been supplied by the chemical solution supply unit 7a
is transferred from the chemical solution supply unit 7a to the
reaction unit 7b in a state of holding the chemical solution, and
is held in the reaction unit 7b during a predetermined time in a
state of holding the chemical solution. Therefore, a period of time
during which the substrate W and the chemical solution react to
each other is secured sufficiently. Additionally, the reaction of
the substrate W and the chemical solution to each other is also
performed outside the chemical solution supply unit 7a, and
therefore the chemical solution can be supplied to a subsequent
substrate W by the chemical solution supply unit 7a during the
progression of the reaction of the substrate W and the chemical
solution to each other. Therefore, a decrease in throughput (i.e.,
the number of substrates W to be processed per unit time) can be
restrained or prevented.
[0070] In the first embodiment, a substrate W held in the reaction
unit 7b during a predetermined time is transferred from the
reaction unit 7b to the rinse unit 7c by the center robot CR. In
other words, a substrate W that has satisfactorily reacted to a
chemical solution in the reaction unit 7b is carried into the rinse
unit 7c. Thereafter, a rinsing liquid is supplied to the substrate
W held by the third spin chuck 31 in the rinse unit 7c. As a
result, the chemical solution held on the substrate W is rinsed
away by the rinsing liquid. As mentioned above, the supply of the
chemical solution, the reaction of the substrate W and the chemical
solution to each other, and the removal of the chemical solution
are performed in the different chambers, and therefore the
structure in each of the chambers 12, 25, and 33 can be restrained
or prevented from being complicated.
[0071] Additionally, in the first embodiment, the chemical solution
is partially supplied to the upper surface of the substrate W. In
more detail, the chemical solution is supplied to the peripheral
portion of the upper surface of the substrate W. Therefore, in this
case, the consumption of the chemical solution can be made smaller
than in a case in which the chemical solution is supplied to the
whole area of the upper surface of the substrate W. Additionally,
the region into which the chemical solution is supplied is
predetermined, and therefore the position to which the chemical
solution is supplied is not required to be changed for each
substrate W. Additionally, the chemical solution is not supplied to
a place beyond the predetermined region, and therefore a region
that has no need for the supply of the chemical solution can be
restrained or prevented from being damaged by the chemical
solution. Additionally, the chemical solution has high viscosity,
and therefore splashes of the chemical solution caused when the
chemical solution is supplied to the substrate W are restrained. As
a result, the chemical solution can be reliably restrained or
prevented from being supplied to a region other than a desired
region.
Second Embodiment
[0072] Next, a second embodiment of the present invention will be
described.
[0073] A main difference between this second embodiment and the
first embodiment mentioned above is that a foreign-matter measuring
unit 40 that measures the position of foreign matters adhering to a
substrate W is provided in a substrate processing apparatus 201.
Additionally, a chemical solution is supplied into a region
determined for each substrate W (i.e., a region in which foreign
matters are contained) in the second embodiment, whereas a chemical
solution is supplied into a predetermined region (i.e., the
peripheral portion of the upper surface of a substrate W) in the
first embodiment. In FIG. 8 to FIG. 10, the same reference
character as in FIG. 1 and in the other figures is given to a
component equivalent to that of FIG. 1 to FIG. 7, and a description
of the component equivalent thereto is omitted.
[0074] FIG. 8 is a illustrated plan view showing a layout of the
substrate processing apparatus 201 according to the second
embodiment of the present invention. FIG. 9 is a schematic side
view showing a structure of the foreign-matter measuring unit 40
according to the second embodiment of the present invention.
[0075] The substrate processing apparatus 201 according to the
second embodiment includes the foreign-matter measuring unit 40
that measures the position of foreign matters adhering to a
substrate W in addition to the structure of the substrate
processing apparatus 1 according to the first embodiment. As shown
in FIG. 8, in the second embodiment, the foreign-matter measuring
unit 40 is disposed at a position that is accessible by the indexer
robot IR. The indexer robot IR performs a carry-in operation for
carrying substrates W into the foreign-matter measuring unit 40 and
a carry-out operation for carrying substrates W out of the
foreign-matter measuring unit 40. Additionally, the indexer robot
IR transfers substrates W between the carrier C held by the carrier
holding section 5 and the foreign-matter measuring unit 40, and
transfers substrates W between the foreign-matter measuring unit 40
and the center robot CR.
[0076] As shown in FIG. 9, the foreign-matter measuring unit 40
includes a fourth spin chuck 41 that horizontally holds and rotates
a substrate W, a foreign-matter measuring device 42 (foreign-matter
measuring unit) that measures the presence or absence of foreign
matters and measures the position of foreign matters, and a fourth
chamber 43 (measuring chamber) that contains the fourth spin chuck
41.
[0077] The fourth spin chuck 41 includes a disk-shaped spin base 13
that is rotatable around a vertical axis passing through the center
of a substrate W while horizontally holding the substrate W and a
spin motor 14 that rotates the spin base 13 around the vertical
axis. The fourth spin chuck 41 may be a gripping-type chuck, or may
be a vacuum-type chuck. In the second embodiment, the fourth spin
chuck 41 is a gripping-type chuck.
[0078] The foreign-matter measuring device 42 measures whether
there are foreign matters on the upper surface of the substrate W,
and measures the position of foreign matters with respect to the
substrate W. A device including at least one of, for example, a
particle counter, a total reflection X-ray fluorescence analyzer
(TRXRF), an energy dispersive X-ray spectrometer (EDX), a scanning
electron microscope (SEM), and an image recognition foreign-matter
inspection device can be mentioned as the foreign-matter measuring
device 42. In the second embodiment, the foreign-matter measuring
device 42 is a device that detects the presence or absence of
foreign matters and detects the position of foreign matters by use
of a laser beam.
[0079] The foreign-matter measuring device 42 includes an
irradiation head 44 that emits a laser beam and a head moving
mechanism 45 that moves the irradiation head 44. The irradiation
head 44 is disposed in the fourth chamber 43. The head moving
mechanism 45 moves the irradiation head 44 so that a laser beam
emitted from the irradiation head 44 moves between the center of
the upper surface of the substrate W and the outer peripheral
portion of the upper surface of the substrate W. The control device
4 controls the spin motor 14 and the foreign-matter measuring
device 42, and moves the irradiation head 44 so that a laser beam
emitted from the irradiation head 44 moves between the center of
the upper surface of the substrate W and the outer peripheral
portion of the upper surface of the substrate W while causing the
fourth spin chuck 41 rotate the substrate W. As a result, the whole
area of the upper surface of the substrate W is scanned with a
laser beam, and is irradiated with the laser beam emitted from the
irradiation head 44.
[0080] The foreign-matter measuring device 42 detects the presence
or absence of foreign matters on the substrate W by radiating a
laser beam to the upper surface of the substrate W. Additionally,
the foreign-matter measuring device 42 measures the position of
foreign matters detected from the movement amount of the
irradiation head 44 moved by the head moving mechanism 45 and from
the rotational angle of the substrate W. In more detail, based on
the movement amount of the irradiation head 44 moved by the head
moving mechanism 45, the foreign-matter measuring device 42
measures the distance from the center of the upper surface of the
substrate W to foreign matters. Additionally, the foreign-matter
measuring device 42 obtains the rotational angle of the substrate W
(angle information) that is based on a notch or an orientation flat
provided at the peripheral portion of the substrate W from the
control device 4. The foreign-matter measuring device 42 measures
the position of foreign matters from the distance from the center
of the upper surface of the substrate W to the foreign matters and
from the rotational angle of the substrate W. Thereafter, the
foreign-matter measuring device 42 outputs the position of the
foreign matters to the control device 4 as positional
information.
[0081] When a chemical solution is supplied to the substrate W in
the chemical solution supply unit 7a, the control device 4 controls
the nozzle moving mechanism 17 (see FIG. 2), and gives instructions
to supply a chemical solution into a region that contains foreign
matters based on the positional information obtained from the
foreign-matter measuring device 42. In other words, the control
device 4 gives instructions to supply a chemical solution into a
region determined for each substrate W (range in which foreign
matters are contained), not to supply a chemical solution into a
predetermined region (i.e., to the peripheral portion of the upper
surface of the substrate W) as in the first embodiment. Therefore,
the processing position of the chemical solution nozzle 9 (see FIG.
2) in the second embodiment is not a fixed position but a fixed
region in which a chemical solution discharged from the chemical
solution nozzle 9 is supplied to any position on the upper surface
of the substrate W.
[0082] The fourth chamber 43 includes a fourth partition wall 47
having a fourth opening 46 and a fourth gate shutter 48 with which
the fourth opening 46 is covered. The fourth gate shutter 48 is
disposed outside the fourth partition wall 47. The fourth gate
opening-closing mechanism 49 is connected to the fourth gate
shutter 48. The fourth gate opening-closing mechanism 49 moves the
fourth gate shutter 48 between a closed position at which the
fourth opening 46 is closed by the fourth gate shutter 48 and an
open position at which the fourth opening 46 is opened. The fourth
gate shutter 48 is beforehand placed at the open position when the
substrate W is carried into the fourth chamber 43 or when the
substrate W is carried out of the fourth chamber 43. The substrate
W is carried into and out of the fourth chamber 43 in a state in
which the fourth opening 46 is opened. Thereafter, the fourth gate
shutter 48 is placed at the closed position, and the fourth opening
46 is closed by the fourth gate shutter 48.
[0083] FIG. 10 is a view for describing one example of processing
the substrate W performed by the substrate processing apparatus 201
according to the second embodiment of the present invention.
Hereinafter, reference is made to FIG. 8 and FIG. 10.
[0084] The control device 4 allows the indexer robot IR to carry
out unprocessed substrates W contained in the carrier C.
Thereafter, the control device 4 allows the indexer robot IR to
carry the substrates W carried out of the carrier C into the
foreign-matter measuring unit 40. As a result, the substrate W is
placed on the fourth spin chuck 41. When the substrate W is placed
on the fourth spin chuck 41, the control device 4 allows the
irradiation head 44 to recede from above the fourth spin chuck
41.
[0085] As shown in FIG. 10, in the foreign-matter measuring unit
40, the control device 4 allows the foreign-matter measuring device
42 to irradiate the substrate W with a laser beam while causing the
fourth spin chuck 41 rotate the substrate W as described above
(foreign-matter measuring process). As a result, the position of
foreign matters on the substrate W is measured, and positional
information about the foreign matters is output from the
foreign-matter measuring device 42 to the control device 4. After
the position of the foreign matters is measured, the control device
4 allows the indexer robot IR to carry the substrate W out of the
foreign-matter measuring unit 40. The substrate W carried out of
the foreign-matter measuring unit 40 is delivered from the indexer
robot IR to the center robot CR. The center robot CR carries the
substrate W received from the indexer robot IR into the chemical
solution supply unit 7a.
[0086] As shown in FIG. 10, in the chemical solution supply unit
7a, a chemical solution discharged from the chemical solution
nozzle 9 is supplied to a portion (i.e., a region in which foreign
matters are contained) of the upper surface of the substrate W
(chemical solution supply process). The chemical solution has high
viscosity, and therefore the chemical solution supplied from the
chemical solution nozzle 9 to the substrate W hardly moves from the
solution-supplied position and stays at this position. Therefore, a
state in which the chemical solution is held at the portion of the
upper surface of the substrate W is maintained. The portion (region
in which foreign matters are contained) of the upper surface of the
substrate W is etched by contact with the chemical solution. After
the chemical solution is supplied to the substrate W, the substrate
W placed in the chemical solution supply unit 7a is carried out of
the chemical solution supply unit 7a by the center robot CR.
Furthermore, the substrate W carried out of the chemical solution
supply unit 7a is carried into the reaction unit 7b by the center
robot CR.
[0087] As shown in FIG. 10, in the reaction unit 7b, after a
plurality of substrates W are carried in, a carry-in operation in
which a single substrate W is carried into the reaction unit 7b and
a carry-out operation in which a single substrate W is carried out
of the reaction unit 7b are alternately and repeatedly performed in
the same manner as in the first embodiment. The substrate W held by
the substrate holding member 24 is held in the reaction unit 7b
during a predetermined time, and, as a result, the reaction of the
substrate W and the chemical solution to each other progresses, and
the portion (region in which foreign matters are contained) of the
upper surface of the substrate W is etched (reaction process).
Accordingly, the foreign matters are lifted off from the substrate
W along with the portion of the upper surface of the substrate W,
or are dissolved by the chemical solution. The substrate W held in
the reaction unit 7b during the predetermined time is carried out
of the reaction unit 7b by the center robot CR. Thereafter, the
substrate W carried out of the reaction unit 7b is carried into the
rinse unit 7c by the center robot CR.
[0088] As shown in FIG. 10, in the rinse unit 7c, a rinsing liquid
is discharged from the rinsing liquid nozzle 32 toward the central
portion of the upper surface of the substrate W held by the third
spin chuck 31 in the same manner as in the first embodiment. As a
result, the rinsing liquid is supplied to the whole area of the
upper surface of the substrate W, and the chemical solution held on
the upper surface of the substrate W is rinsed away (rinsing
process). Furthermore, foreign matters lifted off from the upper
surface of the substrate W along with a portion of the substrate W
by the reaction of the substrate W and the chemical solution to
each other or foreign matters dissolved by the chemical solution
are rinsed away by the rinsing liquid. As a result, the foreign
matters are removed from the substrate W, and the substrate W is
cleaned. Thereafter, as shown in FIG. 10, the rinsing liquid
adhering to the substrate W is removed from the substrate W by the
high-speed rotation of the substrate W, and the substrate W is
dried (spin drying process).
[0089] After the spin drying process is performed in the rinse unit
7c, the substrate W is carried out of the rinse unit 7c by the
center robot CR. Thereafter, the substrate W carried out of the
rinse unit 7c is delivered from the center robot CR to the indexer
robot IR. The indexer robot IR carries the already-processed
substrate W received from the center robot CR into the carrier C
held by the carrier holding section 5. Thereby, the series of
process steps performed by the substrate processing apparatus 201
are ended. The control device 4 gives instructions to repeatedly
perform these operations and to process the plurality of substrates
W one by one.
[0090] As described above, in the second embodiment, the position
of foreign matters adhering to the substrate W is measured by the
foreign-matter measuring device 42, and a chemical solution is
supplied into a region in which foreign matters are contained.
Therefore, a chemical solution is reliably supplied into a region
in which foreign matters are contained, and foreign matters
adhering to the substrate W are reliably removed. Additionally, a
chemical solution is supplied only into a region in which foreign
matters are contained, and therefore a region that has no need for
the supply of a chemical solution can be restrained or prevented
from being damaged by the chemical solution.
[0091] Additionally, in the second embodiment, foreign matters are
measured by the foreign-matter measuring device 42 in the fourth
chamber 43. In other words, the measurement of foreign matters by
the foreign-matter measuring device 42 is performed in a place
differing from the first chamber 12, the second chamber 25, and the
third chamber 33. Therefore, the structure in each of the chambers
12, 25, 33, and 43 can be restrained or prevented from being
complicated.
Other Embodiments
[0092] Although the first and second embodiments of the present
invention have been described as above, the present invention is
not limited to the contents of the first and second embodiments,
and can be variously modified within the scope of the appended
claims.
[0093] For example, the chemical solution supply unit 7a may
include a plurality of chemical solution nozzles 9 although the
chemical solution supply unit 7a includes the single chemical
solution nozzle 9 in the first and second embodiments as described
above.
[0094] Additionally, the chemical solution supply unit 7a is not
necessarily required to include the covering member 10 although the
chemical solution supply unit 7a includes the covering member 10 in
the first and second embodiments as described above.
[0095] Additionally, a chemical solution may be supplied to the
whole area of the upper surface of the substrate W although a
chemical solution is partially supplied to the upper surface of the
substrate W in the first and second embodiments as described above.
Additionally, a chemical solution may be supplied to the peripheral
end surface of the substrate W and/or to the lower surface of the
substrate W without being limited to only the upper surface of the
substrate W.
[0096] Additionally, processing of the substrate W may be
processing other than the processing for removing foreign matters
although foreign matters, such as particles, adhering to the
substrate Ware removed from the substrate W by supplying a chemical
solution to the substrate W in the first and second embodiments as
described above. For example, an etching process that is performed
to remove a thin film formed on the front surface of the substrate
W by use of a chemical solution may be performed for the substrate
W.
[0097] Additionally, the foreign-matter measuring unit 40 may be
disposed at a position accessible by the center robot CR although
the foreign-matter measuring unit 40 is disposed at a position
accessible by the indexer robot IR in the second embodiment as
described above. Specifically, at least one processing unit 7 of a
plurality of processing units 7 may be the foreign-matter measuring
unit 40.
[0098] Additionally, the foreign-matter measuring device 42 may be
arranged to measure the position of foreign matters in the chemical
solution supply unit 7a (first chamber 12) although the
foreign-matter measuring device 42 measures the position of foreign
matters in the foreign-matter measuring unit 40 (fourth chamber 43)
in the second embodiment as described above. In other words, the
foreign-matter measuring unit 40 may not be provided, and the
chemical solution supply unit 7a may additionally include the
foreign-matter measuring device 42. In this case, the substrate W
is not necessarily required to be transferred from the carrier C to
the foreign-matter measuring unit 40 and be transferred from the
foreign-matter measuring unit 40 to the chemical solution supply
unit 7a, and therefore time taken to transfer the substrate W can
be shortened. Therefore, throughput can be increased.
[0099] Additionally, the substrate processing apparatuses 1 and 201
may be apparatuses for processing a polygonal substrate, such as a
glass substrate for a liquid crystal display device, although the
substrate processing apparatuses 1 and 201 are apparatuses for
processing a circular substrate W, such as a semiconductor wafer,
in the first and second embodiments as described above.
[0100] Although the embodiments of the present invention have been
described in detail, these embodiments are merely concrete examples
used to clarify the technical contents of the present invention,
and the present invention should not be understood by being limited
to these concrete examples, and the spirit and scope of the present
invention are limited solely by the appended claims.
[0101] The present application corresponds to Japanese Patent
Application No. 2011-048113 filed in the Japan Patent Office on
Mar. 4, 2011, and the entire disclosure of the application is
incorporated herein by reference.
* * * * *