U.S. patent application number 13/864798 was filed with the patent office on 2014-08-28 for generation of multiple diameter nanowire field effect transistors.
This patent application is currently assigned to International Business Machines Corporation. The applicant listed for this patent is International Business Machines Corporation. Invention is credited to Sarunya Bangsaruntip, Guy M. Cohen, Amlan Majumdar, Jeffrey W. Sleight.
Application Number | 20140239254 13/864798 |
Document ID | / |
Family ID | 44910955 |
Filed Date | 2014-08-28 |
United States Patent
Application |
20140239254 |
Kind Code |
A1 |
Bangsaruntip; Sarunya ; et
al. |
August 28, 2014 |
GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT
TRANSISTORS
Abstract
A system is provided and includes a wafer and a mask. The wafer
includes a silicon-on-insulator (SOI) structure disposed on a
buried oxide (BOX) layer and has a first region with a first SOI
thickness and a second region with a second SOI thickness, the
first and second SOI thicknesses being different from one another
and sufficiently large such that respective pairs of SOI pads
connected via respective nanowires with different thicknesses are
formable therein. The mask covers one of the first and second
regions and prevents a thickness change of the other of the first
and second regions from having effect at the one of the first and
second regions.
Inventors: |
Bangsaruntip; Sarunya;
(Mount Kisco, NY) ; Cohen; Guy M.; (Mohegan Lake,
NY) ; Majumdar; Amlan; (White Plains, NY) ;
Sleight; Jeffrey W.; (Ridgefield, CT) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
International Business Machines Corporation |
Armonk |
NY |
US |
|
|
Assignee: |
International Business Machines
Corporation
Armonk
NY
|
Family ID: |
44910955 |
Appl. No.: |
13/864798 |
Filed: |
April 17, 2013 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12778517 |
May 12, 2010 |
8445337 |
|
|
13864798 |
|
|
|
|
Current U.S.
Class: |
257/24 |
Current CPC
Class: |
H01L 29/42392 20130101;
H01L 29/0665 20130101; H01L 27/1203 20130101; H01L 29/0669
20130101; B82Y 10/00 20130101; H01L 29/0673 20130101; H01L 29/78696
20130101; H01L 29/775 20130101; H01L 21/84 20130101 |
Class at
Publication: |
257/24 |
International
Class: |
H01L 29/06 20060101
H01L029/06; H01L 29/775 20060101 H01L029/775 |
Claims
1. A system, comprising: a wafer, including a silicon-on-insulator
(SOI) structure disposed on a buried oxide (BOX) layer, the wafer
having a first region with a first SOI thickness and a second
region with a second SOI thickness, the first and second SOI
thicknesses being different from one another and sufficiently large
such that respective pairs of SOI pads connected via respective
nanowires with different thicknesses are formable therein; and a
mask covering one of the first and second regions, the mask
preventing a thickness change of the other of the first and second
regions from having effect at the one of the first and second
regions.
2. The system according to claim 1, wherein the nanowires each have
respective drive currents and/or threshold voltages that differ in
accordance with the differences between the SOI thicknesses.
3. The system according to claim 1, further comprising a reagent
provided to thin an unmasked one of the first and second
regions.
4. The system according to claim 4, wherein the reagent comprises
an oxidizer.
5. The system according to claim 1, further comprising added
semi-conductor material to one of the first and second regions.
6. The system according to claim 1, further comprising an annealing
agent provided to reduce nanowire sizes at each of the nanowires at
the first and second regions.
7. A system, comprising: a buried oxide layer; a
silicon-on-insulator (SOI) structure disposed on the buried oxide
(BOX) layer, the SOI structure being arranged in a first region
with a first SOI thickness and a second region with a second SOI
thickness, the first and second SOI thicknesses being different
from one another and sufficiently large such that respective pairs
of SOI pads connected via respective nanowires with different
thicknesses are formable therein; and a mask disposable to cover
one of the first and second regions, the mask preventing a
thickness change of the other of the first and second regions from
having effect at the one of the first and second regions.
8. The system according to claim 7, further comprising a reagent
disposed to cause the thickness change of the other of the first
and second regions.
9. The system according to claim 8, wherein the reagent comprises
an oxidizer.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] The present application is a continuation of U.S.
application Ser. No. 12/778,517, which was filed on May 12, 2010,
and the contents of which are incorporated herein by reference.
BACKGROUND
[0002] Aspects of the present invention are directed to methods of
generating of multiple diameter nanowire field effect transistors
(FETs).
[0003] Nanowire FETs are attracting considerable attention as an
option for the design of future
complementary-metal-oxide-semiconductor (CMOS) components. While
advances are being made, several key issues remain to be
considered. Among these, one particular issue is that nanowire FET
devices will be required to provide for devices with different
drive current strengths and/or different threshold voltages
(Vt).
[0004] While current solutions to the problem of providing for
devices with different drive current strengths and/or different
threshold voltages exist, the solutions generally rely upon
modulations of device threshold voltages by way of corresponding
modulations of the gate work-function. As such, these solutions
tend to have relatively difficult and costly process integration
operations and, additionally, the solutions tend to present
variation concerns.
SUMMARY
[0005] In accordance with an aspect of the invention, a system is
provided and includes a wafer and a mask. The wafer includes a
silicon-on-insulator (SOI) structure disposed on a buried oxide
(BOX) layer and has a first region with a first SOI thickness and a
second region with a second SOI thickness, the first and second SOI
thicknesses being different from one another and sufficiently large
such that respective pairs of SOI pads connected via respective
nanowires with different thicknesses are formable therein. The mask
covers one of the first and second regions and prevents a thickness
change of the other of the first and second regions from having
effect at the one of the first and second regions.
[0006] In accordance with an aspect of the invention, a system is
provided and includes a buried oxide layer, a silicon-on-insulator
(SOI) structure disposed on the buried oxide (BOX) layer, the SOI
structure being arranged in a first region with a first SOI
thickness and a second region with a second SOI thickness, the
first and second SOI thicknesses being different from one another
and sufficiently large such that respective pairs of SOI pads
connected via respective nanowires with different thicknesses are
formable therein and a mask disposable to cover one of the first
and second regions, the mask preventing a thickness change of the
other of the first and second regions from having effect at the one
of the first and second region.
BRIEF DESCRIPTIONS OF THE SEVERAL VIEWS OF THE DRAWINGS
[0007] The subject matter regarded as the invention is particularly
pointed out and distinctly claimed in the claims at the conclusion
of the specification. The foregoing and other aspects, features,
and advantages of the invention are apparent from the following
detailed description taken in conjunction with the accompanying
drawings in which:
[0008] FIG. 1 is a perspective view of a wafer having first and
second regions established thereon;
[0009] FIG. 2 is a perspective view of the wafer of FIG. 1 having
nanowire channels defined thereon;
[0010] FIGS. 3 and 4 are perspective views of the wafer of FIGS. 1
and 2 having reshaped nanowires defined thereon;
[0011] FIG. 5 is a perspective view of a reshaped nanowire having a
gate structure; and
[0012] FIG. 6 includes cross-sectional views of nanowires having
different thicknesses.
DETAILED DESCRIPTION
[0013] In accordance with aspects of the present invention,
nominal, high and low Vt masks are employed to modulate a thickness
of an initial silicon on insulator (SOI) structure thickness.
[0014] Structures to support, for example, gate-all-around (GAA)
nanowire field effect transistors (FETs) as well as methods for
fabricating the same are provided by way of descriptions referring
to silicon (Si) nanowires and Si processing. However, the present
techniques can also be practiced with other semiconductor materials
such as, for example, germanium (Ge). When non-Si-containing
semiconductors are used, the processing steps of the present
teachings are similar and adapted to the specific semiconductor
used. Use of Si-containing semiconductor materials such as Si,
silicon germanium (SiGe), Si/SiGe, silicon carbide (SiC) or silicon
germanium carbide (SiGeC) are therefore understood to be merely
exemplary.
[0015] With reference to FIG. 1, a wafer 1 is provided and includes
a Si substrate 101, a buried oxide (BOX) layer 102 and a
silicon-on-insulator (SOI) layer 103. The wafer 1 can be fabricated
using methods such as Separation by IMplanted OXygen (SIMOX) or
wafer bonding (for example, SmartCut.TM.). These wafer fabrication
techniques are known to those of skill in the art and thus are not
described further herein. Also, the substitution of other SOI
substrates known in the art for the SOI on BOX configuration
described herein may be made and would be within the scope of the
present teachings.
[0016] The wafer 1 has at least a first region 10 and a second
region 20 established thereon. The first and second regions 10 and
20 are initially formed of similar components with similar initial
silicon thicknesses with the first region 10 being masked by mask
30. Mask 30 covers layer 103 in region 10 and thus prevents any
modification of layer 103 in region 10. That is, treatments applied
to the surface of wafer 1 may modify layer 103 in region 20 but
would not substantially affect layer 103 in region 10 due to the
masking by mask 30.
[0017] Mask 30 is typically a hard mask, such as silicon nitride
(Si.sub.3N.sub.4), and the treatment that is applied to the surface
of wafer 1 could include, for example, an oxidation or etching. An
oxidation would convert the top portion of layer 103 in region 20
to SiO.sub.2. Since layer 103 in region 10 is covered with mask 30,
however, no substantial oxide forms in or on the layer 103 in
region 10. As a result, the silicon portion in layer 103 in region
20 is thinned as compared to that of layer 103 in region 10.
Further, when oxidation is used, mask 30 is chosen to be a
relatively good oxidation barrier. An example of such masking
material is Si.sub.3N.sub.4. Etching (wet or dry) can also be used
to thin layer 103 in region 20. If etching is used the choice of
mask 30 is made to provide relatively good etching resistivity.
[0018] With the mask 30 covering first region 10, the SOI layer 103
of the second region 20 can be thinned while the thickness of the
SOI layer 103 of the first region 10 remains substantially
constant. As a result, the SOI layer 103 of the first region 10
will have an initial silicon thickness T.sub.1 and the SOI layer
103 of the second region 20 will have an initial silicon thickness
T.sub.2 that will be different from and generally thinner than the
initial silicon thickness T.sub.1 of the first region 10. These
differences in the initial silicon thicknesses T.sub.1 and T.sub.2
may then be manifest in the relative thicknesses of reshaped
nanowires 108 to be formed in the first and second regions 10 and
20 (see FIGS. 4 and 6) which will, accordingly, exhibit physical
characteristics that may be unique from one another, as will be
discussed below.
[0019] The thinning of the SOI layer 103 of the second region 20
can be accomplished in one iteration or may be repeated one or more
times in order to achieve a selected degree of thinning The
thinning may also be coupled with unmasked thinning of both the
first and second regions 10 and 20. Such unmasked thinning can be
conducted such that the unmasked thinning of both the first and
second regions 10 and 20 occurs at similar rates such that a
difference between the thicknesses T.sub.1 and T.sub.2 is
maintained.
[0020] An alternative method for fabricating a first SOI region 10
with thickness T.sub.1 and a second SOI region 20 with thickness
T.sub.2 relies on the addition of material to region 10. That is,
while the method described above involves subtracting material from
region 20 by processes such as oxidation or etching, the
alternative method involves the addition of material to the layer
103 at region 10.
[0021] As an example, the initial thickness of regions 10 and
region 20 may be fixed at T.sub.2, which could be the initial
thickness of the SOI film 103. A mask similar to mask 30 may then
be deposited over region 20. This mask may consist of materials
such as SiO.sub.2 or Si.sub.3N.sub.4. Region 10 remains unmasked.
The exposed surface of region 10 is then cleaned (for example
stripped of any native oxide) and selective silicon epitaxy is
applied to the surface of the wafer 1. In an epitaxial process,
silicon is added to layer 103 of region 10. The added silicon
mimics the same structure of the layer 103, which serves as a
template. As a result, layer 103 in region 10 is thickened, to a
thickness T.sub.1, and the added silicon has substantially the same
crystal structure as that of original layer 103 at region 10.
[0022] In accordance with embodiments, the epitaxial growth
described above is selective. Here, the selectivity refers to the
addition or deposition of silicon only over silicon surfaces but
not over dielectric surfaces. As a result, no silicon is deposited
over the mask at region 20 or the buried oxide 102. To obtain
selective silicon growth, chlorine-containing Si precursors such as
silicon-tetrachloride (SiCl.sub.4) and dichlorosilane
(H.sub.2SiCl.sub.2) are frequently used. A mixture of silane
(SiH.sub.4) and HCL can also be used. The growth temperature
depends on the precursor used. For example, when SiH.sub.4 is used
a growth temperature higher than 500.degree. C. is needed.
[0023] With reference to FIG. 2, pairs of SOI pads 103A and
nanowire channels 104 connecting them can be patterned into the SOI
layer 103 at the first region 10 and the second region 20 to form,
for example, ladder-like structures in each region having
dimensions of or at least reflective of the respective thicknesses
T.sub.1 and T.sub.2. The patterning of the nanowire channels 104
and SOI pads 103A may be achieved by lithography (e.g., optical or
e-beam) followed by RIE or by sidewall transfer techniques. These
patterning techniques are known to those of skill in the art.
[0024] With reference to FIGS. 3 and 4, the nanowire channels 104
can be reshaped into nanowires 108 and suspended or released from
the BOX layer 102 by etching and a recessing of the BOX layer 102.
The reshaped nanowires 108 thus form suspended bridges between SOI
pads 103A and over recessed oxide 105 in the first and second
regions 10 and 20. The recessing of the BOX layer 102 can be
achieved with a diluted hydrofluoric (DHF) etch. The lateral
component of this etching undercuts the BOX layer 102.
Alternatively, suspension may be obtained during an annealing
process to form the reshapes nanowires 108. While SOI substrates
provide an easy path to define and suspend nanowire channels 104
and/or reshaped nanowires 108, it is possible to obtain suspension
with other substrates. For example, a SiGe/Si stack epitaxially
grown on bulk Si wafers can also be patterned to form the nanowire
channels 104 and/or the reshaped nanowires 108. The SiGe layer can
also be used as a sacrificial layer (analogous to the BOX layer
102) which is undercut.
[0025] As shown in FIG. 3, the reshaped nanowires 108 are formed at
the first region 10 with thickness T.sub.1 and at the second region
20 with thickness T.sub.2. Here, the reshaping refers to a
smoothing of the respective surfaces of the reshaped nanowires 108
to thereby change their respective cross-sections to be
increasingly cylindrical and thin by the movement of silicon from
the bodies of the reshaped nanowires 108 to the SOI pads 103A. As
an example, the reshaped nanowires 108 may be formed by way of an
annealing during which the wafer 1 contacts an inert gas at a
temperature, pressure and for a duration sufficient to cause Si
migration.
[0026] In particular, the wafer 1 may be annealed in an exemplary
H.sub.2 gas. Shortly before H.sub.2 annealing, native oxide is
etched off from the surfaces of the reshaped nanowires 108 and the
SOI pads 103A. The annealing in H.sub.2 smoothes the nanowire
sidewalls, realigns the sidewalls and the SOI pads 103A and
re-shapes the nanowire cross-sections from rectangular to
cylindrical. The H.sub.2 anneal may also thin the bodies of the
reshaped nanowires 108 by the Si migration. According to an
exemplary embodiment, the inert gas anneal may be performed with a
gas pressure of from about 30 torr to about 1000 torr, at a
temperature of from about 600 degrees Celsius (.degree. C.) to
about 1100.degree. C. and for a duration of about 1-120 minutes. In
general, the rate of Si re-distribution increases with temperature
and decrease with an increase in pressure.
[0027] The reshaped nanowires 108 at the first region 10 and having
a thickness T.sub.1 and the reshaped nanowires 108 at the second
region 20 and having a thickness T.sub.2 may have different drive
currents and/or threshold voltages. In this way, it is understood
that device characteristics at least at the first and second
regions 10 and 20 of the wafer 1 can be controlled by corresponding
control of initial silicon thicknesses at the first and second
regions 10 and 20 which are partially determinative of the
thicknesses T.sub.1 and T.sub.2.
[0028] As shown in FIG. 4, the processes for forming the reshaped
nanowires 108 at the first and second regions 10 and 20 of the
wafer 1 may reshape the nanowires 108 at similar rates or at
different unique rates and may be coupled with additional reshaping
processes. Thus, differences between final thicknesses T.sub.1, and
T.sub.2, may be similar to the differences between the initial
silicon thicknesses T.sub.1 and T.sub.2 or, alternatively, the
differences between thicknesses T.sub.1, and T.sub.2, may be
increased or decreased as compared to the differences between the
initial silicon thicknesses T.sub.1 and T.sub.2. For example, the
H.sub.2 anneal of at the second thinner region 20 may have a
greater relative effect than it does at the first region 10 owing
to the relative thinness of the SOI layer 103 at the second region
20. More specifically, it was found experimentally that silicon
diffusion is typically faster for smaller nanowires. As a result,
the rate of thinning during H.sub.2 annealing will be faster for
region 20.
[0029] Referring now to FIGS. 5 and 6, a gate structure 402 may be
formed around the reshaped nanowires 108. First, the reshaped
nanowires 108 are coated with first and second gate dielectrics
112A and 112. The first (and optional) gate dielectric 112A is
typically SiO.sub.2. The second gate dielectric 112 may include
silicon dioxide (SiO.sub.2), silicon oxynitride (SiON), hafnium
oxide (HfO.sub.2) or any other suitable high-K dielectric(s) and
may be deposited using chemical vapor deposition (CVD), atomic
layer deposition (ALD) or an oxidation furnace in the case of
SiO.sub.2 and SiON. A conformal deposition of a thin gate conductor
117 of, e.g., TaN or TiN, may then be formed. This may be followed
by a deposition of doped poly-Si 113 to form a gate stack 118
perimetrically surrounding the reshaped nanowires 108. A mask 115
is employed to facilitate the etching of a gate line by, for
example, RIE. A portion of the thin gate conductor 117 outside of
the gate stack 118 may be removed by RIE or, in an alternate
embodiment, the removal of the thin gate conductor 117 from
surfaces outside gate stack may require an additional wet etch
operation.
[0030] Poly-germanium or another suitable composition can be used
as a substitute to poly-Si 113. Additionally, any poly-SiGe alloy
can also be used to substitute poly-Si 113. Still further, poly-Si
113 can be deposited in a poly-crystalline form or deposited in an
amorphous form which is later transformed into poly-Si when exposed
to high temperature.
[0031] While the disclosure has been described with reference to
exemplary embodiments, it will be understood by those skilled in
the art that various changes may be made and equivalents may be
substituted for elements thereof without departing from the scope
of the disclosure. In addition, many modifications may be made to
adapt a particular situation or material to the teachings of the
disclosure without departing from the essential scope thereof.
Therefore, it is intended that the disclosure not be limited to the
particular exemplary embodiment disclosed as the best mode
contemplated for carrying out this disclosure, but that the
disclosure will include all embodiments falling within the scope of
the appended claims.
* * * * *