U.S. patent application number 14/232851 was filed with the patent office on 2014-05-22 for polishing pad.
This patent application is currently assigned to TORAY INDUSTRIES, INC.. The applicant listed for this patent is Seiji Fukuda, Ryoji Okuda, Nana Takeuchi. Invention is credited to Seiji Fukuda, Ryoji Okuda, Nana Takeuchi.
Application Number | 20140141704 14/232851 |
Document ID | / |
Family ID | 47558099 |
Filed Date | 2014-05-22 |
United States Patent
Application |
20140141704 |
Kind Code |
A1 |
Takeuchi; Nana ; et
al. |
May 22, 2014 |
POLISHING PAD
Abstract
A polishing pad includes at least a polishing layer including a
groove, on a polishing surface, having side surfaces, wherein at
least one of the side surfaces includes a first side surface that
extends continuously to the polishing surface and forms an angle
.alpha. with the polishing surface, and a second side surface that
extends continuously to the first side surface and forms an angle
.beta. with a plane parallel to the polishing surface, the angle
.alpha. is larger than 95 degrees, the angle .beta. is larger than
95 degrees, and the angle .beta. is smaller than the angle .alpha.,
and a bending point depth from the polishing surface to a bending
point between the first side surface and the second side surface is
more than 0.2 mm and not more than 3.0 mm.
Inventors: |
Takeuchi; Nana; (Otsu-shi,
JP) ; Fukuda; Seiji; (Otsu-shi, JP) ; Okuda;
Ryoji; (Otsu-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Takeuchi; Nana
Fukuda; Seiji
Okuda; Ryoji |
Otsu-shi
Otsu-shi
Otsu-shi |
|
JP
JP
JP |
|
|
Assignee: |
TORAY INDUSTRIES, INC.
Tokyo
JP
|
Family ID: |
47558099 |
Appl. No.: |
14/232851 |
Filed: |
July 12, 2012 |
PCT Filed: |
July 12, 2012 |
PCT NO: |
PCT/JP2012/067835 |
371 Date: |
January 14, 2014 |
Current U.S.
Class: |
451/529 ;
451/527 |
Current CPC
Class: |
B24D 11/00 20130101;
B24B 37/16 20130101; B24B 37/26 20130101 |
Class at
Publication: |
451/529 ;
451/527 |
International
Class: |
B24B 37/26 20060101
B24B037/26 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 15, 2011 |
JP |
2011-156424 |
Claims
1. A polishing pad comprising at least a polishing layer, wherein
the polishing layer comprises a groove on a polishing surface, the
groove having side surfaces, at least one of the side surfaces
comprises a first side surface that extends continuously to the
polishing surface and forms an angle .alpha. with the polishing
surface, and a second side surface that extends continuously to the
first side surface and forms an angle .beta. with a plane parallel
to the polishing surface, the angle .alpha. formed with the
polishing surface is larger than 95 degrees, the angle .beta.
formed with the plane parallel to the polishing surface is larger
than 95 degrees, and the angle .beta. formed with the plane
parallel to the polishing surface is smaller than the angle .alpha.
formed with the polishing surface, and a bending point depth from
the polishing surface to a bending point between the first side
surface and the second side surface is more than 0.2 mm and not
more than 3.0 mm.
2. The polishing pad according to claim 1, wherein a difference
between the angle .alpha. formed with the polishing surface and the
angle .beta. formed with the plane parallel to the polishing
surface is not larger than 55 degrees.
3. The polishing pad according to claim 1, wherein the angle
.alpha. formed with the polishing surface is not smaller than 105
degrees and not larger than 150 degrees.
4. The polishing pad according to claim 1, wherein the angle .beta.
formed with the plane parallel to the polishing surface is larger
than 95 degrees and smaller than 150 degrees.
5. The polishing pad according to claim 1, wherein a groove pattern
on the polishing surface is grid-shaped.
Description
FIELD
[0001] The present invention relates to a polishing pad. More
particularly, the present invention relates to a polishing pad
preferably used in order to form a flat surface in a semiconductor,
a dielectric/metallic composite, an integrated circuit, and the
like.
BACKGROUND
[0002] As the density of a semiconductor device becomes higher, the
importance of technologies such as multilayer wiring, and formation
of interlayer insulating films and electrodes (such as a plug and a
damascene structure) associated with the multilayer wiring is
increasing. At the same time, the importance of planarization
processes of the interlayer insulating films and the electrode
metal films is increasing. As an efficient technology for the
planarization processes, a polishing technology called CMP
(Chemical Mechanical Polishing) is widespread.
[0003] The CMP apparatus generally includes a polishing head that
holds a semiconductor wafer as a subject to be processed, a
polishing pad for performing a polishing process of a subject to be
processed, and a polishing platen that holds the polishing pad. In
a polishing process of a semiconductor wafer using a slurry, a
semiconductor wafer and a polishing pad move relative to each
other, so that projections of a semiconductor wafer surface layer
are removed to planarize the wafer surface layer. A pad surface is
updated by dressing with a diamond dresser and the like for
clogging prevention and setting.
[0004] Conventionally, there is known a technology to improve wafer
flatness and a polishing rate by providing a groove that is
arranged on a polishing layer surface and has a concentric circular
pattern and a substantially rectangular cross-sectional shape (for
example, see Patent Literature 1).
[0005] However, in this technology, corners in a cross-sectional
shape of a groove and burr-like materials formed in the corners
caused by dressings performed prior to, following to, or during
polishing may sometimes cause generation of scratches. To solve
this problem, there is disclosed a technology of providing an
inclined surface at a boundary between a polishing surface and a
groove (for example, see Patent Literatures 2 and 3).
CITATION LIST
Patent Literature
[0006] Patent Literature 1: Japanese Patent Application Laid-Open
No. 2002-144219
[0007] Patent Literature 2: Japanese Patent Application Laid-Open
No. 2004-186392
[0008] Patent Literature 3: Japanese Patent Application Laid-Open
No. 2010-45306
SUMMARY
Technical Problem
[0009] Here, the inventors have found that an inclined surface is
provided at a boundary between a polishing surface and a groove, so
that not only scratches are reduced, but also improvement in
suction and slurry flow between a wafer and a polishing pad is
developed to increase the polishing rate. However, the inventors
have also found that variation of a polishing rate cannot be
suppressed at some angle of the inclined surface. Furthermore, the
inventors have also found that provision of such an inclined
surface reduces a polishing surface area to increase a pad cut
rate, resulting in shortened pad life.
[0010] In view of the above problems associated with conventional
technologies, an object of the present invention is to provide a
polishing pad that, among other polishing properties, has a long
life and can suppress variation of a polishing rate while
maintaining a high polishing rate.
Solution to Problem
[0011] The inventors considered that an inclination from a
polishing surface to a groove bottom influences a pad cut rate, and
that an angle at a boundary between a polishing surface and a
groove influences a polishing rate. To balance them, the inventors
considered that the problems could be solved by combining an angle
at which a pad cut rate decreases and an angle at which variation
of a polishing rate decreases.
[0012] Therefore, the present invention employs the following means
to solve the above problems. That is, a polishing pad includes at
least a polishing layer, wherein the polishing layer includes a
groove on a polishing surface, the groove having side surfaces, at
least one of the side surfaces includes a first side surface that
extends continuously to the polishing surface and forms an angle
.alpha. with the polishing surface, and a second side surface that
extends continuously to the first side surface and forms an angle
.beta. with a plane parallel to the polishing surface, the angle
.alpha. formed with the polishing surface is larger than 95
degrees, the angle .beta. formed with the plane parallel to the
polishing surface is larger than 95 degrees, and the angle .beta.
formed with the plane parallel to the polishing surface is smaller
than the angle .alpha. formed with the polishing surface, and a
bending point depth from the polishing surface to a bending point
between the first side surface and the second side surface is more
than 0.2 mm and not more than 3.0 mm.
Advantageous Effects of Invention
[0013] According to the present invention, a polishing pad that has
a long life and can suppress variation of a polishing rate while
maintaining a high polishing rate can be provided.
BRIEF DESCRIPTION OF DRAWINGS
[0014] FIG. 1 is a partial cross-sectional view illustrating a
configuration of a main part of a polishing pad according to an
embodiment of the present invention.
[0015] FIG. 2 is a partial cross-sectional view illustrating the
configuration (second example) of a main part of a polishing pad
according to an embodiment of the present invention.
[0016] FIG. 3 is a partial cross-sectional view illustrating the
configuration (third example) of a main part of a polishing pad
according to an embodiment of the present invention.
[0017] FIG. 4 is a partial cross-sectional view illustrating the
configuration (fourth example) of a main part of a polishing pad
according to an embodiment of the present invention.
DESCRIPTION OF EMBODIMENTS
[0018] Embodiments for carrying out the present invention will be
described below.
[0019] The inventors extensively studied a polishing pad that has a
long life and can suppress variation of a polishing rate while
maintaining a high polishing rate. As a result, the inventors found
that the problem described above can be solved once for all by
configuring a polishing pad having at least a polishing layer,
wherein the polishing layer includes a groove on a polishing
surface, and the groove has side surfaces; at least one of the side
surfaces includes a first side surface that extends continuously
from the polishing surface and forms an angle .alpha. with the
polishing surface and a second side surface that extends
continuously from the first side surface and forms an angle .beta.
with a plane parallel to the polishing surface; the angle .alpha.
formed with the polishing surface is larger than 95 degrees, the
angle .beta. formed with the plane parallel to the polishing
surface is larger than 95 degrees, and the angle .beta. formed with
the plane parallel to the polishing surface is smaller than the
angle .alpha. formed with the polishing surface; and a bending
point depth from the polishing surface to a bending point between
the first side surface and the second side surface is more than 0.2
mm and not more than 3.0 mm.
[0020] In the present invention, the polishing pad preferably has
at least a cushion layer in addition to the polishing layer. When a
cushion layer is not provided, distortion caused by, for example,
water absorption of the polishing layer cannot be buffered.
Therefore, a polishing rate and in-plane uniformity of a material
to be polished unstably vary. A distortion constant of the cushion
layer is preferably not lower than 7.3.times.10.sup.-6 .mu.m/Pa and
not higher than 4.4.times.10.sup.-4 .mu.m/Pa. From a viewpoint of
polishing rate variation and local flatness of a material to be
polished, the upper limit of the distortion constant is preferably
not higher than 3.0.times.10.sup.-4 .mu.m/Pa, and more preferably
not higher than 1.5.times.10.sup.-4 .mu.m/Pa. Also, the lower limit
of the distortion constant is preferably not lower than
1.0.times.10.sup.-5 .mu.m/Pa, and more preferably not lower than
1.2.times.10.sup.-5 .mu.m/Pa. When polishing rate variation is
large, a polishing amount of a material to be polished varies. As a
result, a film thickness of a material to be polished varies,
thereby adversely affecting performance of a semiconductor device.
Therefore, the polishing rate variation is preferably not more than
20%, more preferably not more than 15%.
[0021] A distortion constant in the present invention was
calculated according to the following equation:
Distortion constant (.mu.m/Pa)=(T1-T2)/(177-27)/1000,
wherein T1 (.mu.m) is a thickness when a pressure of 27 kPa is
applied for 60 seconds with a dial gauge using an indenter having a
leading end diameter of 5 mm, and T2 (.mu.m) is a thickness when a
pressure of 177 kPa is applied for 60 seconds thereafter.
[0022] Examples of such a cushion layer may include, but are not
limited to, natural rubber, nitrile rubber, "Neoprene (registered
trademark)" rubber, polybutadiene rubber, thermosetting
polyurethane rubber, thermoplastic polyurethane rubber, silicone
rubber, non-foamed elastomer such as "Hytrel (registered
trademark)", a polyolefin foamed body such as "Toraypef (registered
trademark, PEF manufactured by Toray Industries, Inc.)", and
non-woven fabric such as "Suba 400" manufactured by Nitta Haas
Incorporated.
[0023] The distortion constant of the cushion layer can be adjusted
depending on a material thereof. For example, when the cushion
layer is a foamed body, increasing a foaming degree tends to cause
the foamed body to become soft. Therefore, the distortion constant
tends to increase. Also, when the cushion layer is non-foamed,
hardness can be controlled by adjusting a crosslinking degree in
the cushion layer.
[0024] The thickness of the cushion layer is preferably 0.1 to 2
mm. From a viewpoint of in-plane uniformity on a whole surface of a
semiconductor substrate, the thickness is preferably not less than
0.25 mm, and more preferably not less than 0.3 mm. Moreover, from a
viewpoint of local flatness, the thickness is preferably not more
than 2 mm, and more preferably not more than 1 mm.
[0025] The polishing layer surface (polishing surface) of the
polishing pad according to the present invention has a groove.
Examples of a shape of the groove as seen from the polishing layer
surface may include, but are not limited to, lattice, radial,
concentric circular, and spiral shapes. When the groove is an
open-type and extends in a circumferential direction, slurry can be
efficiently updated. Therefore, a lattice shape is the most
preferable.
[0026] According to the present invention, at least one of the side
surfaces of the groove includes a first side surface that extends
continuously from a polishing surface and forms an angle .alpha.
with the polishing surface, and a second side surface that extends
continuously from the first side surface and forms an angle .beta.
with a plane parallel to the polishing surface. Each of the first
side surface and the second side surface may be plane (linear in a
cross-sectional shape of the groove) or curved (curved in a
cross-sectional shape of the groove).
[0027] In the present invention, the angle .alpha. is larger than
95 degrees, the angle .beta. is larger than 95 degrees, and the
angle .beta. is smaller than the angle .alpha.. Thus, variation of
a polishing rate can be suppressed while maintaining a high
polishing rate. This can be explained as below. Variation of a
polishing rate is generally large in initial and middle stages of
polishing. However, by providing an inclined surface having an
angle larger than 95 degrees at a boundary between the polishing
surface and the groove, not only a polishing rate increases, but
also such variation of a polishing rate in initial and middle
stages can be effectively suppressed.
[0028] On the other hand, in such a configuration, a contact area
between a material to be polished and a polishing pad surface is
small. Accordingly, there is a concern that a pad cut rate is high.
Therefore, a configuration in which the groove provides a larger
contact area when the depth of the groove is equal to or deeper
than a certain depth is preferable. By adjusting the angle .alpha.
and the angle .beta. as described above, such an object can be
achieved. The difference between the angle .alpha. and the angle
.beta. is more preferably not larger than 55 degrees, and further
preferably not larger than 50 degrees.
[0029] From a viewpoint of retention and fluidity of slurry, the
lower limit of the angle .alpha. is preferably not smaller than 105
degrees, and more preferably not smaller than 115 degrees. Also,
the upper limit of the angle .alpha. is preferably not larger than
150 degrees, and more preferably not larger than 140 degrees. Both
the side surfaces forming a groove and facing each other may have a
similar shape. However, since slurry flows due to a centrifugal
force, it is more effective that, of the side surfaces forming a
groove and facing each other, at least the side surface on a
circumferential side has an inclination. The angle .beta. is not
limited as long as the angle .beta. is smaller than the angle
.alpha.. However, the upper limit of the angle .beta. is preferably
smaller than 150 degrees, and further preferably smaller than 140
degrees.
[0030] Here, a side surface (side surface 3) that extends
continuously from the side surface 2 in a direction opposite to the
side surface 1. In such a case, an angle (angle 3) formed between
the side surface 3 and the polishing surface is preferably larger
than 95 degrees and smaller than the angle .beta..
[0031] Similarly, when n is a natural number equal to or more than
3, a side surface (side surface (n+1)) that extends continuously in
a direction opposite to a side surface (n-1) with respect to a side
surface n can be provided. In such a case, an angle (angle (n+1))
formed between the side surface (n+1) and the polishing surface is
preferably larger than 95 degrees and smaller than an angle n.
[0032] When the polishing layer is scraped off as a material to be
polished is polished and the polishing surface passes the bending
point that is a boundary between the first side surface and the
second side surface, variation of a polishing rate can occur.
Furthermore, a pad cut rate differs depending on whether a groove
side surface in the shallowest part is the first side surface or
the second side surface. Therefore, the depth from the polishing
surface to the bending point is preferably equal to or deeper than
a level of inhibiting reduction in effects of an inclined groove
part on the polishing surface side. In view of this, and
considering that the life of a polishing pad is preferably long, a
specific depth from the polishing surface to the bending point is
preferably not less than 10% and not more than 95% of the depth of
the entire groove, and more preferably not less than 20% and not
more than 90% thereof.
[0033] Since it is important that a pad life is long and that
suppression of variation of a polishing rate is balanced with, the
bending point depth from the polishing surface to the bending point
between the first side surface and the second side surface is more
than 0.2 mm and not more than 3.0 mm. The polishing surface
described here means a polishing surface before the polishing layer
is scraped off. When the bending point depth is deep, a pad life
becomes short. When the bending point depth is shallow, a polishing
rate varies. The upper limit of the bending point depth from the
polishing surface to the bending point between the first side
surface and the second side surface is preferably not more than 2.5
mm, more preferably not more than 2.0 mm, and further preferably
not more than 1.8 mm. Also, the lower limit of the bending point
depth from the polishing surface to the bending point between the
first side surface and the second side surface is preferably not
less than 0.3 mm, more preferably not less than 0.4 mm, and further
preferably not less than 0.5 mm.
[0034] A specific shape of the groove according to the present
invention as described above will be described with reference to
the drawings. FIG. 1 is a partial cross-sectional view illustrating
the configuration of a main part of a polishing pad according to an
embodiment of the present invention. A polishing pad 1 illustrated
in FIG. 1 has a polishing layer 10. A groove 12 is formed on a
polishing surface 11 of the polishing layer 10. The groove 12 has a
first side surface 13 that extends continuously to the polishing
surface 11 and inclines at an angle .alpha. formed with respect to
the polishing surface 11, a second side surface 15 that extends
continuously to the first side surface 13 and bends with respect to
the first side surface 13 at a bending point 14, and a deepest
groove part 16. An angle .beta. of the second side surface with
respect to a plane parallel to the polishing surface 11 is smaller
than the angle .alpha. of the first side surface 13 with respect to
the polishing surface 11.
[0035] Here, a groove shape configured by the second side surfaces
15 and the deepest part 16 is not limited to the shape illustrated
in FIG. 1. For example, like a groove 17 of a polishing pad 2
illustrated in FIG. 2, a deepest part 18 may have a bottom surface
substantially parallel to the polishing surface 11. Also, like a
groove 19 of a polishing pad 3 illustrated in FIG. 3, a boundary
part between the second side surface 15 and a deepest part 20 may
constitute a curved surface. Also, like a groove 21 of a polishing
pad 4 shown in FIG. 4, the cross-sectional shape of second side
surfaces 15 and a deepest part 22 may constitute a U-shape.
[0036] As the polishing layer constituting the polishing pad, a
closed cell structure is preferable, because a flat surface is
formed in a semiconductor, a dielectric/metallic composite, an
integrated circuit, and the like. The hardness of the polishing
layer measured by an Asker D hardness meter is preferably 45 to 65
degrees. When the Asker D hardness is less than 45 degrees, as the
wafer in-plane uniformity of a polishing rate for a material to be
polished decreases, the uniformity of wafer in-plane planarization
properties (planarity) tends to decrease.
[0037] Examples of a material for forming such a structure may
include, but are not particularly limited to, polyethylene,
polypropylene, polyester, polyurethane, polyurea, polyamide,
polyvinyl chloride, polyacetal, polycarbonate, polymethyl
methacrylate, polytetrafluoroethylene, epoxy resin, ABS resin, AS
resin, phenol resin, melamine resin, "Neoprene (registered
trademark)" rubber, butadiene rubber, styrene butadiene rubber,
ethylene propylene rubber, silicone rubber, fluorine rubber, and
resins including these as a main component. Two or more of these
may be used. Also in these resins, since a closed cell diameter can
be relatively easily controlled, a material including polyurethane
as a main component is more preferable.
[0038] Polyurethane is a macromolecule synthesized by a
polyaddition reaction or a polymerization reaction of
polyisocyanate. A compound used as a reference of polyisocyanate is
an active hydrogen-containing compound that is a compound
containing two or more polyhydroxy groups or an amino
group-containing compound. Examples of polyisocyanate may include,
but are not limited to, tolylene diisocyanate, diphenylmethane
diisocyanate, naphthalene diisocyanate, hexamethylene diisocyanate,
and isophorone diisocyanate. Two or more of these may be used.
[0039] A compound containing a polyhydroxy group is
representatively polyol. Examples thereof may include polyether
polyol, polytetramethylene ether glycol, epoxy resin-modified
polyol, polyester polyol, acrylic polyol, polybutadiene polyol, and
silicone polyol. Two or more of these may be used. Combination and
optimum amounts of polyisocyanate and polyol, and a catalyst, a
foaming agent and a foam stabilizer are preferably determined
depending on hardness, a cell diameter and a foaming ratio.
[0040] As a method of forming closed cells in the polyurethane, a
chemical foaming method in which various foaming agents are blended
into a resin during production of polyurethane is generally used.
However, a method including foaming a resin by mechanical stirring
and thereafter curing the foamed resin may also preferably be
used.
[0041] The average cell diameter of closed cells is preferably not
less than 30 .mu.m in order to reduce scratches. Also, in view of
flatness of local unevenness of a material to be polished, the
average cell diameter is preferably not more than 150 .mu.m, more
preferably not more than 140 .mu.m, and further preferably not more
than 130 .mu.m. The average cell diameter is obtained as follows.
Of cells observed in one field of view when observing a sample
section at a magnification of 400 times using an ultra-deep
microscope VK-8500 manufactured by Keyence Corporation, circular
cells excluding cells that are observed in a circle in a state of
being deficient in the field end are measured using an image
processing apparatus to obtain a circle-equivalent diameter from
the cross-sectional area. Then, a number average value is
calculated.
[0042] A preferred embodiment of the polishing pad according to the
present invention is a pad that contains a polymer of a vinyl
compound as well as polyurethane and has closed cells. With only a
polymer from a vinyl compound, toughness and hardness can be
improved, but a uniform polishing pad having closed cells is
unlikely to be obtained. Furthermore, polyurethane becomes brittle
when hardness is brought to be higher. By impregnating a vinyl
compound into polyurethane, a polishing pad containing closed cells
and having high toughness and hardness can be obtained.
[0043] A vinyl compound is a polymerizable compound having a
carbon-carbon double bond. Specific examples of the vinyl compound
may include methyl acrylate, methyl methacrylate, ethyl acrylate,
ethyl methacrylate, n-butyl acrylate, n-butyl methacrylate,
2-ethylhexyl methacrylate, isodecyl methacrylate, n-lauryl
methacrylate, 2-hydroxy ethyl methacrylate, 2-hydroxy propyl
methacrylate, 2-hydroxy butyl methacrylate, dimethylaminoethyl
methacrylate, diethylaminoethyl methacrylate, glycidyl
methacrylate, ethylene glycol dimethacrylate, acrylic acid,
methacrylic acid, fumaric acid, dimethyl fumarate, diethyl
fumarate, dipropyl fumarate, maleic acid, dimethyl maleate, diethyl
maleate, dipropyl maleate, phenylmaleimide, cyclohexyl maleimide,
isopropyl maleimide, acrylonitrile, acrylamide, vinyl chloride,
vinylidene chloride, styrene, .alpha.-methylstyrene,
divinylbenzene, ethylene glycol dimethacrylate, and diethylene
glycol dimethacrylate. Two or more of these may be used.
[0044] Among the above-described vinyl compounds,
CH.sub.2=CR.sup.1COOR.sup.2 (R.sup.1: a methyl group or an ethyl
group, R.sup.2: a methyl group, an ethyl group, a propyl group, or
a butyl group) is preferable. Especially, methyl methacrylate,
ethyl methacrylate, n-butyl methacrylate, and isobutyl methacrylate
are preferable. This is because closed cells can be easily formed
into polyurethane; monomers can be favorably impregnated;
polymerization curing can be easily performed; and a foaming
structure containing a polymer of a polymerization-cured vinyl
compound and polyurethane has high hardness and favorable
planarization properties.
[0045] Examples of a polymerization initiator preferably used for
obtaining these polymers of vinyl compounds may include a radical
initiator such as azobisisobutyronitrile,
azobis(2,4-dimethylvaleronitrile), azobis cyclohexane carbonitrile,
benzoyl peroxide, lauroyl peroxide, and isopropyl peroxy
dicarbonate. Two or more of these may be used. Also, a redox-based
polymerization initiator, for example, a combination of peroxide
and amines can be used.
[0046] A method of impregnating a vinyl compound into polyurethane
may include a method including immersing polyurethane in a vessel
containing a vinyl compound. At that time, treatments such as
heating, pressurizing, pressure-reducing, stirring, shaking, and
ultrasonic vibration are preferably performed in order to increase
an impregnation speed.
[0047] The impregnation amount of the vinyl compound into
polyurethane should be determined depending on types of the vinyl
compound and polyurethane to be used and properties of a polishing
pad to be manufactured. Therefore, the impregnation amount cannot
be completely defined. However, for example, the content ratio of
the polymer obtained from the vinyl compound and polyurethane in a
polymerization-cured foamed structure is preferably 30/70 to 80/20
in terms of weight. When the content ratio of the polymer obtained
from the vinyl compound is not less than 30/70 in terms of weight,
hardness of the polishing pad can be made sufficiently high. Also,
when the content ratio is not more than 80/20, elasticity of the
polishing layer can be made sufficiently high.
[0048] Here, the content ratio of the polymer obtained from the
polymerization-cured vinyl compound in polyurethane can be measured
by a pyrolysis gas chromatography/mass spectrometry technique. An
apparatus that can be used in this technique may include a
double-shot pyrolyzer "PY-2010D" (manufactured by Frontier
Laboratories Ltd.) as a thermal decomposition apparatus and
"TRIO-1" (manufactured by VG) as a gas chromatography and mass
spectrometry apparatus.
[0049] In the present invention, from a viewpoint of flatness of
local unevenness of a semiconductor substrate, a phase of the
polymer obtained from the vinyl compound and a phase of
polyurethane are preferably contained without being separated from
each other. When expressed quantitatively, it is preferable that an
infrared spectrum obtained when the polishing pad be observed using
an infrared microspectrometer with a spot size of 50 .mu.m have an
infrared absorption peak of the polymer polymerized from the vinyl
compound and an infrared absorption peak of polyurethane, and that
infrared spectra in various locations be approximately the same. An
infrared microspectrometer to be used here may include IR.mu.s
manufactured by SPECTRA-TEC.
[0050] In order to improve properties, the polishing pad may
contain various additives such as an abrasive, an antistatic agent,
a lubricant, a stabilizer, and a dye.
[0051] In the present invention, in order to reduce poor local
flatness and global steps, the density of the polishing layer is
preferably not less than 0.3 g/cm.sup.3, more preferably not less
than 0.6 g/cm.sup.3, and further preferably not less than 0.65
g/cm.sup.3. On the other hand, in order to reduce scratches, the
density is preferably not more than 1.1 g/cm.sup.3, more preferably
not more than 0.9 g/cm.sup.3, and further preferably not more than
0.85 g/cm.sup.3. Here, the density of the polishing layer in the
present invention is a value measured using a Harvard-type
pycnometer (in accordance with JIS R-3503 standard) with water as a
medium.
[0052] Examples of a material to be polished in the present
invention may include a surface of an insulating layer or a metal
wiring formed on a semiconductor wafer. The insulating layer may
include an interlayer insulating film of a metal wiring, a
lower-layer insulating film of a metal wiring, and a shallow trench
isolation layer used for element isolation. The metal wiring may be
made from aluminum, tungsten, copper, or an alloy thereof. Examples
of a structure of the metal wiring may include damascene, dual
damascene, and a plug. When copper is used as the metal wiring,
barrier metal such as silicon nitride also becomes a subject to be
polished. Currently, silicon oxide is mainly used as the insulating
film. However, a low dielectric constant insulating film is also
used. In addition to a semiconductor wafer, a magnetic head, a hard
disk, sapphire, SiC, MEMS (Micro Electro Mechanical Systems), and
the like may be used as a subject to be polished.
[0053] The polishing method according to the present invention is
suitably used in order to form a flat surface of glass, a
semiconductor, a dielectric/metallic composite, an integrated
circuit, and the like.
EXAMPLES
[0054] The present invention will be further described in detail by
examples. However, the present invention should not be interpreted
to be limited by the examples. Measurement was performed as
below.
<Measurement of Cell Diameter>
[0055] Of cells observed in one field of view when observing a
sample section at a magnification of 400 times using an ultra-deep
microscope VK-8500 manufactured by Keyence Corporation, circular
cells excluding cells that are observed in a circle in a state of
being deficient in the field end are measured using an image
processing apparatus to obtain a circle-equivalent diameter from
the cross-sectional area. A number average value is calculated to
serve as an average cell diameter.
<Measurement of Hardness>
[0056] Measurement was performed in accordance with JIS K6253-1997.
The produced polyurethane resin was cut out into a piece having a
size of 2 cm.times.2 cm (thickness: optional). The piece was used
as a hardness measurement sample, and left to stand for 16 hours in
an environment of a temperature of 23.degree. C..+-.2.degree. C.
and a humidity of 50%.+-.5%. During measurement, samples were
superimposed on each other to have a thickness of not less than 6
mm. Hardness was measured using a hardness meter (manufactured by
Kobunshi Keiki Co., Ltd., Asker D-type hardness meter).
<Measurement of Micro Rubber A Hardness>
[0057] A cushion layer was cut out into a piece having a size of 3
cm.times.3 cm. The piece was used as a hardness measurement sample,
and left to stand for 16 hours in an environment of a temperature
of 23.degree. C..+-.2.degree. C. and a humidity of 50%.+-.5%.
Different three points in one piece of sample were measured using a
micro rubber hardness meter MD-1 manufactured by Kobunshi Keiki
Co., Ltd. An average value was calculated to serve as a micro
rubber A hardness.
<Measurement of Inclination Angle>
[0058] A pad having a groove formed on a polishing layer surface
was disposed so that a razor blade was vertical to a groove
direction. Then, the pad was sliced in a groove depth direction.
The obtained groove section was observed by an ultra-deep
microscope VK-8500 manufactured by Keyence Corporation. An angle
(angle .alpha.) formed between a polishing surface and a side
surface extending continuously to the groove polishing surface was
measured. At locations of 1/3 and 2/3 of a radius from a pad
center, the closest grooves were measured. An average of one each
location, two locations in total, was calculated to serve as an
inclination angle. An angle .beta. was measured in a similar manner
thereto.
[0059] <Measurement of Bending Point Depth>
[0060] A pad having a groove formed on a polishing layer surface
was disposed so that a razor blade was vertical to a groove
direction. Then, the pad was sliced in a groove depth direction.
The obtained groove section was observed by an ultra-deep
microscope VK-8500 manufactured by Keyence Corporation. A vertical
distance from the polishing surface, to a midpoint between two
bending points each including a first side surface and a second
side surface and both facing each other, was measured. At locations
of 1/3 and 2/3 of a radius from a pad center, the closest grooves
were measured. An average of one each location, two locations in
total, was calculated to serve as a bending point depth.
<Measurement of Initial Inter-Bending Point Distance>
[0061] A pad having a groove formed on a polishing layer surface
was disposed so that a razor blade was vertical to a groove
direction. Then, the pad was sliced in a groove depth direction.
The obtained groove section was observed by an ultra-deep
microscope VK-8500 manufactured by Keyence Corporation. A distance
between two bending points each having an angle .alpha. and
including a polishing surface and a first side surface and both
facing each other was measured to obtain a bending point distance.
Also, the inter-bending point distance in the initial stage of
polishing was determined as an initial inter-bending point
distance.
<Calculation of Distortion Constant>
[0062] A distortion constant was calculated according to the
following equation:
Distortion constant (.mu.m/Pa)=(T1-T2)/(177-27)/1000,
wherein T1 (.mu.m) is a thickness when a pressure of 27 kPa was
applied for 60 seconds with a dial gauge using an indenter having a
leading end diameter of 5 mm, and T2 (.mu.m) is a thickness when a
pressure of 177 kPa was applied for 60 seconds thereafter.
<Calculation of Average Polishing Rate>
[0063] Using Mirra 3400 manufactured by Applied Materials, Inc.,
polishing was performed while performing end point detection under
a given polishing condition. Polishing properties were measured in
a diameter direction, excluding a region of 10 mm from the
outermost circumference of an 8-inch wafer. Measurement was
performed at 37 points per 5 mm on a surface within a radius of 90
mm from the center. Then, an average polishing rate (nm/minute) was
calculated.
<Calculation of Polishing Rate Variation>
[0064] After 1000 wafers were polished and an average polishing
rate was measured wafer by wafer, a polishing rate variation of the
first to 700th wafers was calculated according to the following
equation:
Polishing rate variation(%)={(Maximum wafer average polishing
rate)-(minimum wafer average polishing rate)}/(1000th wafer average
polishing rate).
[0065] When the variation of a polishing rate is large,
insufficient polishing or excess polishing can cause device
failure. Therefore, the polishing rate variation is suitably low,
preferably not more than 30%, and more preferably not more than
20%.
<Measurement of Average Pad Cut Rate>
[0066] Using Mirra 3400 manufactured by Applied Materials, Inc.,
polishing was performed while performing end point detection under
a given polishing condition. With a depth gauge, a groove depth
(D1) mm after polishing 30 workpieces and a groove depth (D2) mm
after polishing 1000 workpieces were measured. Calculation was made
from dress time (t.sub.d) minutes by a dresser.
Average pad cut rate (.mu.m/minute)=(D1-D2).times.1000/td
[0067] The average pad cut rate depends on the inter-bending point
distance as well as the angle .alpha. and the angle .beta.. The
inter-bending point distance changes as polishing proceeds. When
the average inter-bending point distance from the initial stage to
the final stage of polishing is smaller, the average pad cut rate
is lower.
Average inter-bending point distance (mm)={(Polishing initial stage
cross-sectional area)-(Polishing final stage cross-sectional
area)}/{(Polishing initial stage deepest part groove
depth)-(Polishing final stage deepest part groove depth)}
<Calculation of Polishing Pad Life>
[0068] A groove depth in the polishing initial stage was measured.
Then, an effective groove depth (D3) mm that is shallower by 0.3 mm
from the deepest part was calculated. Calculation was made from a
time (t.sub.p) minute during which a wafer was polished and the
average pad cut rate.
Polishing pad life(time)=D3.times.1000/(Average pad cut
rate).times.t.sub.p/60
[0069] The polishing pad life is preferably not less than 15
hours.
[0070] Examples 1 to 12 and Comparative Examples 1 to 4 will be
described below.
Example 1
[0071] In a RIM molding machine, 30 parts by weight of
polypropylene glycol, 40 parts by weight of diphenylmethane
diisocyanate, 0.5 parts by weight of water, 0.3 parts by weight of
triethylamine, 1.7 parts by weight of a silicone foam stabilizer,
and 0.09 parts by weight of tin octylate were mixed. The mixture
was discharged into a mold and subjected to pressure molding. Thus,
a foamed polyurethane sheet containing closed cells was
produced.
[0072] The foamed polyurethane sheet was immersed in methyl
methacrylate added with 0.2 parts by weight of
azobisisobutyronitrile for 60 minutes. Next, the foamed
polyurethane sheet was immersed in a solution including 15 parts by
weight of polyvinyl alcohol "CP" (polymerization degree: about 500,
manufactured by Nacalai Tesque Inc.), 35 parts by weight of ethyl
alcohol (special grade chemical, manufactured by Katayama Chemical
Co., Ltd.), and 50 parts by weight of water, and then dried. Thus,
a surface layer of the foamed polyurethane sheet was coated with
polyvinyl alcohol.
[0073] Next, the foamed polyurethane sheet was placed between two
glass plates via vinyl chloride gaskets, and then heated for 6
hours at 65.degree. C. and for 3 hours at 120.degree. C. to be
polymerization-cured. The sheet was released from between the glass
plates, washed with water, and then vacuum-dried at 50.degree. C.
The hard foamed sheet obtained as above was subjected to a slicing
process into a piece having a thickness of 2.00 mm. Thus, a
polishing layer was produced. The content ratio of methyl
methacrylate in the polishing layer was 66% by weight. The
polishing layer had a D hardness of 54 degrees and a density of
0.81 g/cm.sup.3. An average cell diameter of closed cells was 45
.mu.m.
[0074] Both surfaces of the obtained hard foamed sheet were ground.
Thus, a polishing layer having a thickness of 2.4 mm was
produced.
[0075] Thermoplastic polyurethane (cushion layer thickness: 0.3
.mu.m) manufactured by Nihon Matai Co., Ltd. having a distortion
constant of 0.15.times.10.sup.-4 .mu.m/Pa (micro rubber A hardness
89) as a cushion layer was laminated on the polishing layer
obtained by the above method via an MA-6203 adhesive layer
manufactured by Mitsui Chemicals Polyurethanes, Inc. using a roll
coater. Furthermore, a double-sided tape 5604TDM manufactured by
Sekisui Chemical Co., Ltd. as a rear surface tape was bonded to the
rear surface thereof. This laminate was punched into a circle
having a diameter of 508 mm. A groove having a groove pitch of 15
mm, an angle .alpha. of 135 degrees, an angle .beta. of 120
degrees, and a groove depth of 1.9 mm was formed in an XY grid
pattern on the polishing layer surface. Thus, a polishing pad was
obtained. At this time, the bending point depth was 0.69 mm, and
the initial stage inter-bending point distance was 3 mm.
[0076] The polishing pad obtained by the above method was pasted on
a platen of a polishing machine ("Mirra 3400" manufactured by
Applied Materials, Inc.). Under a retainer ring pressure=41 kPa (6
psi), an inner tube pressure=28 kPa (4 psi), a membrane pressure=28
kPa (4 psi), a platen revolution=76 rpm, a polishing head
revolution=75 rpm, and a slurry (manufactured by Cabot Corporation,
SS-25) flow of 150 mL/minute, 1000 8-inch wafers as oxide films
were polished using a dresser manufactured by Saesol at a load of
17.6 N (4 lbf), a polishing time of 1 minute, and an in-situ
dressing time of 30 seconds after polishing started.
[0077] The average polishing rate of the 1000th oxide film was
192.2 nm/minute. The polishing rate variation for 1000 oxide films
was 8.5%. The average pad cut rate was 1.22 .mu.m/minute, and the
polishing pad life was 22 hours. Thus, the results were
favorable.
Example 2
[0078] Polishing was performed in the same manner as that in
Example 1, except that the angle .alpha. of the groove on the
polishing layer surface was changed to 145 degrees, the polishing
layer thickness was changed to 2.25 mm, and the groove depth was
changed to 1.75 mm. At this time, the bending point depth was 0.46
mm, and the initial stage inter-bending point distance was 3 mm.
The average polishing rate was 195.2 nm/minute, and the polishing
rate variation was 13.2%. The average pad cut rate was 1.15
.mu.m/minute, and the polishing pad life was 21 hours. Thus, the
results were favorable.
Example 3
[0079] Polishing was performed in the same manner as that in
Example 1, except that the angle .beta. of the groove on the
polishing layer surface was changed to 100 degrees, the polishing
layer thickness was changed to 3.15 mm, and the groove depth was
changed to 2.65 mm. At this time, the bending point depth was 1.37
mm, and the initial stage inter-bending point distance was 3.4 mm.
The average polishing rate was 184.1 nm/minute, and the polishing
rate variation was 17.2%. The average pad cut rate was 1.22
.mu.m/minute, and the polishing pad life was 32 hours. Thus, the
results were favorable.
Example 4
[0080] Polishing was performed in the same manner as that in
Example 1, except that the angle .alpha. of the groove on the
polishing layer surface was changed to 100 degrees, the angle
.beta. was changed to 98 degrees, the polishing layer thickness was
changed to 2.0 mm, and the groove depth was changed to 1.5 mm. At
this time, the bending point depth was 0.3 mm, and the initial
stage inter-bending point distance was 3 mm. The average polishing
rate was 187.8 nm/minute, and the polishing rate variation was
17.8%. The average pad cut rate was 1.20 .mu.m/minute, and the
polishing pad life was 16 hours. Thus, the results were
favorable.
Example 5
[0081] Polishing was performed in the same manner as that in
Example 1, except that the angle .alpha. of the groove on the
polishing layer surface was changed to 150 degrees, the angle
.beta. was changed to 145 degrees, the polishing layer thickness
was changed to 2.0 mm, and the groove depth was changed to 1.5 mm.
At this time, the bending point depth was 0.27 mm, and the initial
stage inter-bending point distance was 5 mm. The average polishing
rate was 201.9 nm/minute, and the polishing rate variation was
18.9%. The average pad cut rate was 1.24 .mu.m/minute, and the
polishing pad life was 16 hours. Thus, the results were
favorable.
Example 6
[0082] Polishing was performed in the same manner as that in
Example 1, except that the angle .alpha. of the groove on the
polishing layer surface was changed to 160 degrees, the angle
.beta. was changed to 110 degrees, the polishing layer thickness
was changed to 2.5 mm, and the groove depth was changed to 2.05 mm.
At this time, the bending point depth was 0.79 mm, and the initial
stage inter-bending point distance was 5 mm. The average polishing
rate was 183.8 nm/minute, and the polishing rate variation was
16.4%. The average pad cut rate was 1.35 .mu.m/minute, and the
polishing pad life was 21 hours. Thus, the results were
favorable.
Example 7
[0083] Polishing was performed in the same manner as that in
Example 1, except that the angle .alpha. of the groove on the
polishing layer surface was changed to 115 degrees, the angle
.beta. was changed to 100 degrees, the polishing layer thickness
was changed to 2.0 mm, and the groove depth was changed to 1.5 mm.
At this time, the bending point depth was 0.27 mm, and the initial
stage inter-bending point distance was 3 mm. The average polishing
rate was 182.5 nm/minute, and the polishing rate variation was
17.5%. The average pad cut rate was 1.22 .mu.m/minute, and the
polishing pad life was 16 hours. Thus, the results were
favorable.
Example 8
[0084] Polishing was performed in the same manner as that in
Example 1, except that the angle .alpha. of the groove on the
polishing layer surface was changed to 165 degrees, the angle
.beta. was changed to 155 degrees, the polishing layer thickness
was changed to 2.2 mm, and the groove depth was changed to 1.7 mm.
At this time, the bending point depth was 0.5 mm, and the initial
stage inter-bending point distance was 5 mm. The average polishing
rate was 190.2 nm/minute, and the polishing rate variation was
15.6%. The average pad cut rate was 1.36 .mu.m/minute, and the
polishing pad life was 17 hours. Thus, the results were
favorable.
Example 9
[0085] Polishing was performed in the same manner as that in
Example 1, except that the polishing layer thickness was changed to
2.9 mm, and the groove depth was changed to 2.4 mm. At this time,
the bending point depth was 2.1 mm, and the initial stage
inter-bending point distance was 3 mm. The average polishing rate
was 185.7 nm/minute, and the polishing rate variation was 14.4%.
The average pad cut rate was 1.23 .mu.m/minute, and the polishing
pad life was 28 hours. Thus, the results were favorable.
Example 10
[0086] Polishing was performed in the same manner as that in
Example 1, except that the polishing layer thickness was changed to
3.5 mm, and the groove depth was changed to 3.0 mm. At this time,
the bending point depth was 2.6 mm, and the initial stage
inter-bending point distance was 3 mm. The average polishing rate
was 183.3 nm/minute, and the polishing rate variation was 15.1%.
The average pad cut rate was 1.24 .mu.m/minute, and the polishing
pad life was 36 hours. Thus, the results were favorable.
Example 11
[0087] Polishing was performed in the same manner as that in
Example 1, except that two angles .alpha. that face each other via
the groove on the polishing layer surface were changed to 135
degrees and 130 degrees so that the two angles facing each other
differ from each other. At this time, the bending point depth was
0.69 mm, and the initial stage inter-bending point distance was 3
mm. The average polishing rate was 191.8 nm/minute, and the
polishing rate variation was 9.0%. The average pad cut rate was
1.20 .mu.m/minute, and the polishing pad life was 22 hours. Thus,
the results were favorable.
Example 12
[0088] Polishing was performed in the same manner as that in
Example 1, except that a polyester film having a thickness of 188
.mu.m was bonded to the rear surface of the polishing layer via an
adhesive, and a cushion layer was bonded to the polyester film
surface. At this time, the bending point depth was 0.69 mm, and the
initial stage inter-bending point distance was 3 mm. The average
polishing rate was 192.8 nm/minute, and the polishing rate
variation was 9.3%. The average pad cut rate was 1.22 .mu.m/minute,
and the polishing pad life was 22 hours. Thus, the results were
favorable.
Comparative Example 1
[0089] Polishing was performed in the same manner as that in
Example 1, except that the angle .alpha. of the groove on the
polishing layer surface was changed to 93 degrees, the angle .beta.
was changed to 90 degrees, the polishing layer thickness was
changed to 2.0 mm, and the groove depth was changed to 1.5 mm. At
this time, the bending point depth was 0.27 mm, and the initial
stage inter-bending point distance was 1.5 mm. The average
polishing rate was 180.1 nm/minute, and the polishing rate
variation was 45.1%. Thus, the polishing rate variation was large.
The average pad cut rate was 1.12 .mu.m/minute, and the polishing
pad life was 18 hours. Thus, the results were favorable.
Comparative Example 2
[0090] Polishing was performed in the same manner as that in
Example 1, except that the angle .alpha. of the groove on the
polishing layer surface was changed to 93 degrees, the angle .beta.
was changed to 90 degrees, the polishing layer thickness was
changed to 2.0 mm, and the groove depth was changed to 1.5 mm. At
this time, the bending point depth was 0.27 mm, and the initial
stage inter-bending point distance was 3 mm. The average polishing
rate was 189.5 nm/minute, and the polishing rate variation was
30.8%. Thus, the polishing rate variation was large. The average
pad cut rate was 1.5 .mu.m/minute, and the polishing pad life was
13 hours. Thus, the life was short.
Comparative Example 3
[0091] Polishing was performed in the same manner as that in
Example 1, except that the angle .beta. was changed to 98 degrees,
the polishing layer thickness was changed to 2.0 mm, and the groove
depth was changed to 1.5 mm. At this time, the bending point depth
was 0.15 mm, and the initial stage inter-bending point distance was
3 mm. The average polishing rate was 190.1 nm/minute, and the
polishing rate variation was 36.2%. Thus, the polishing rate
variation was large. The average pad cut rate was 1.42
.mu.m/minute, and the polishing pad life was 14 hours. Thus, the
life was short.
Comparative Example 4
[0092] Polishing was performed in the same manner as that in
Example 1, except that the angle .alpha. of the groove on the
polishing layer surface was changed to 160 degrees, the angle
.beta. was changed to 100 degrees, the polishing layer thickness
was changed to 2.5 mm, and the groove depth was changed to 2.0 mm.
At this time, the bending point depth was 0.60 mm, and the initial
stage inter-bending point distance was 4 mm. The average polishing
rate was 184.6 nm/minute, and the polishing rate variation was
31.0%. Thus, the polishing rate variation was large. The average
pad cut rate was 1.32 .mu.m/minute, and the polishing pad life was
21 hours. Thus, the results were favorable.
[0093] The results obtained in Examples 1 to 12 and Comparative
Examples 1 to 4 described above are shown in Table 1.
TABLE-US-00001 TABLE 1 Example Example Example Example Example
Example Example Example Example 1 2 3 4 5 6 7 8 9 .alpha. (degrees)
135 145 135 100 150 160 115 165 135 .beta. (degrees) 120 120 100 98
145 110 100 155 120 Polishing Layer 2.4 2.25 3.15 2.0 2.0 2.5 2.0
2.2 2.9 Thickness (mm) Groove Depth (mm) 1.9 1.75 2.65 1.5 1.5 2.05
1.5 1.7 2.4 Bending Point 0.69 0.46 1.37 0.3 0.27 0.79 0.27 0.5 2.1
Depth (mm) Initial Stage 3 3 3.4 3 5 5 3 5 3 Groove Inter- Bending
Point Distance (mm) Average Polishing 192.2 195.2 184.1 187.8 201.9
183.8 182.5 190.2 185.7 Rate (nm/min.) Polishing Rate 8.5 13.2 17.2
17.8 18.9 16.4 17.5 15.6 14.4 Variation (%) Average Pad Cut 1.22
1.15 1.22 1.20 1.24 1.35 1.22 1.36 1.23 Rate (.mu.m/min.) Polishing
Pad Life 22 21 32 16 16 21 16 17 28 (hours) Example Example Example
Comp. Comp. Comp. Comp. 10 11 12 Ex. 1 Ex. 2 Ex. 3 Ex. 4 .alpha.
(degrees) 135 135, 130 135 93 93 135 160 .beta. (degrees) 120 120
120 90 90 98 100 Polishing Layer 3.5 2.4 2.4 2.0 2.0 2.0 2.5
Thickness (mm) Groove Depth (mm) 3.0 1.9 1.9 1.5 1.5 1.5 2.0
Bending Point 2.6 0.69 0.69 0.27 0.27 0.15 0.60 Depth (mm) Initial
Stage 3 3 3 1.5 3 3 4 Groove Inter- Bending Point Distance (mm)
Average Polishing 183.3 191.8 192.8 180.1 189.5 190.1 184.6 Rate
(nm/min.) Polishing Rate 15.1 9.0 9.3 45.1 30.8 36.2 31.0 Variation
(%) Average Pad Cut 1.24 1.20 1.22 1.12 1.5 1.42 1.32 Rate
(.mu.m/min.) Polishing Pad Life 36 22 22 18 13 14 21 (hours)
Example 12 . . . Polyester film having thickness of 188 .mu.m
bonded to polishing layer rear surface + cushion layer bonded to
polyester film surface
REFERENCE SIGNS LIST
[0094] 1, 2, 3, 4 Polishing pad [0095] 10 Polishing layer [0096] 11
Polishing surface [0097] 12, 17, 19, 21 Groove [0098] 13 First side
surface [0099] 14 Bending point [0100] 15 Second side surface
[0101] 16, 18, 20, 22 Deepest part
* * * * *