U.S. patent application number 14/035567 was filed with the patent office on 2014-03-27 for equipment and method of manufacturing for liquid processing in a controlled atmospheric ambient.
The applicant listed for this patent is Robin Cheung, Igor Constantin Ivanov. Invention is credited to Robin Cheung, Igor Constantin Ivanov.
Application Number | 20140087073 14/035567 |
Document ID | / |
Family ID | 50339113 |
Filed Date | 2014-03-27 |
United States Patent
Application |
20140087073 |
Kind Code |
A1 |
Ivanov; Igor Constantin ; et
al. |
March 27, 2014 |
EQUIPMENT AND METHOD OF MANUFACTURING FOR LIQUID PROCESSING IN A
CONTROLLED ATMOSPHERIC AMBIENT
Abstract
In various exemplary embodiments, a system and related method
for processing substrates is provided. In one embodiment, a
substrate processing system is provided that includes a substrate
load module, a plurality of facilities modules, a plurality of
process chambers, a substrate transfer module, at least one
transfer gate to provide a contamination barrier between various
ones of adjacent modules, and at least one gas impermeable shell to
provide a controlled atmosphere within the substrate processing
system.
Inventors: |
Ivanov; Igor Constantin;
(Danville, CA) ; Cheung; Robin; (Cupertino,
CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Ivanov; Igor Constantin
Cheung; Robin |
Danville
Cupertino |
CA
CA |
US
US |
|
|
Family ID: |
50339113 |
Appl. No.: |
14/035567 |
Filed: |
September 24, 2013 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
61704862 |
Sep 24, 2012 |
|
|
|
61831026 |
Jun 4, 2013 |
|
|
|
Current U.S.
Class: |
427/248.1 ;
118/719 |
Current CPC
Class: |
H01L 21/67017 20130101;
H01L 21/67126 20130101; B05D 1/38 20130101; B05C 9/06 20130101 |
Class at
Publication: |
427/248.1 ;
118/719 |
International
Class: |
B05C 9/06 20060101
B05C009/06; B05D 1/38 20060101 B05D001/38 |
Claims
1. A substrate processing system, comprising: a substrate load
module; a plurality of facilities modules; a plurality of process
chambers; a substrate transfer module; at least one transfer gate
to provide a contamination barrier between various ones of adjacent
modules; and at least one gas impermeable shell to provide a
controlled atmosphere within the substrate processing system.
2. The substrate processing system of claim 1, wherein the
substrate load module, the plurality of facilities modules, the
plurality of process chambers, and the substrate transfer module
are enclosed within the at least one gas impermeable shell.
3. The substrate processing system of claim 1, wherein only the
substrate load module, the plurality of process chambers, and the
substrate transfer module are enclosed within the at least one gas
impermeable shell.
4. The substrate processing system of claim 1, further comprising a
loadlock chamber that is separately enclosed within a separate one
of the at least one gas impermeable shell.
5. The substrate processing system of claim 1, further comprising a
continuous flow mechanism within the substrate transfer module, the
continuous flow mechanism to flow a neutral gas over a substrate
when the substrate is within the substrate transfer module.
6. The substrate processing system of claim 1, wherein the
substrate processing system is configured to process at least one
of type of substrates from a group of substrate types comprising
semiconductor wafers, solar panels, LED panels, LCD panels, OLED
panels, and other substrates onto which films are to be
deposited.
7. The substrate processing system of claim 1, wherein the
plurality of process chambers include at least one of a liquid
process chamber, a thermal process chamber, and a vapor phase
chamber.
8. The substrate processing system of claim 7, wherein the liquid
process chamber is configured to deposit liquids onto a substrate
as a spin-on, a spin-cast, a drop-cast, a spray, or an ink-jet
technology.
9. The substrate processing system of claim 7, wherein the thermal
process chamber is configured to provide programmable thermal
processing, programmable thermal processing to include programming
of at least one variable of process temperature, process pressure,
and process gas distribution with the thermal process chamber.
10. The substrate processing system of claim 7, wherein the vapor
phase chamber is configured to provide at least one type of
deposition selected from deposition types including vapor phase
condensation, chemical vapor deposition, atomic layer deposition,
molecular layer deposition, pulsed laser deposition, and physical
vapor deposition technologies.
11. The substrate processing system of claim 7, wherein the thermal
process chamber and the vapor phase chamber are configured to
change a temperature of the substrate in-situ.
12. The substrate processing system of claim 1, wherein at least
one of the plurality of process chambers is selectably configured
to process the substrates in vacuum, at atmospheric pressure, and
at pressures above atmospheric pressure.
13. The substrate processing system of claim 1, wherein the
substrate load module, the plurality of facilities modules, the
plurality of process chambers, and the substrate transfer module
are isolated from an ambient environment.
14. The substrate processing system of claim 1, wherein at least
one of the substrate load module, the plurality of process
chambers, and the substrate transfer module are configured to be
filled with a non-corrosive gas or a chemical vapor.
15. The substrate processing system of claim 1, further comprising
a vacuum chamber having a substrate holder configured to heat and
cool a substrate, the vacuum chamber further to provide a vapor
phase deposition of thin films onto the substrate, wherein the
substrate is to be placed into the vacuum chamber at a
substantially ambient room temperature in a controlled environment
and a film is to be deposited onto the substrate after the
substrate reaches a predetermined temperature.
16. The substrate processing system of claim 15, wherein the vacuum
chamber is configured to provide a plurality of chemical precursor
vapors to the substrate, the vacuum chamber being further
configured to provide the plurality of chemical precursor vapors to
the substrate sequentially, concurrently, or alternatively in a
mixed mode.
17. The substrate processing system of claim 15, wherein the
substrate processing system is configured to place the substrate
onto a heated substrate holder within the vacuum chamber after the
vacuum chamber has reached predetermined environmental
conditions.
18. The substrate processing system of claim 17, wherein the
predetermined environmental conditions include at least one
condition including vacuum, pressure, and gas flow.
19. The substrate processing system of claim 15, wherein the
substrate processing system is configured to remove the substrate
from a heated substrate holder within the vacuum chamber before the
vacuum chamber has reached predetermined environmental
conditions.
20. The substrate processing system of claim 19, wherein the
predetermined environmental conditions include at least one
condition including vacuum, pressure, and gas flow.
21. A method of forming a film on a substrate, the method
comprising: depositing a sequence of liquid process chemicals on
the substrate; using one or more thermal processes to stabilize the
film; and using one or more vapor phase deposition processes to at
least partially reduce exposure of the substrate to a corrosive
environment by executing all processes within a sealed environment,
the sealed environment being filled with at least one of a
non-corrosive gas, a reducing gas, or a mixture of the
non-corrosive gas and the reducing gas.
Description
PRIORITY APPLICATION
[0001] This application claims the benefit of priority under 35
U.S.C. 119(e) to U.S. Provisional Patent Application Ser. Nos.
61/704,862 and 61/831,026, each entitled "EQUIPMENT AND METHOD OF
MANUFACTURING FOR LIQUID PROCESSING IN A CONTROLLED ATMOSPHERICE
AMBIENT," filed on Sep. 24, 2012 and Jun. 4, 2013, respectively,
which are hereby incorporated by reference herein in their
entireties.
TECHNICAL FIELD
[0002] The present application relates generally to the field of
fabrication of electronic components and, in a specific embodiment,
to a system and method of manufacturing electronic and optical
devices.
BACKGROUND
[0003] An electronic device manufacturing process consists of many
steps where some materials are not only sensitive to the
environment during deposition or etch processes but the formed
films are protected to prevent damage during transfer to another
process module. A conventional approach is to deposit sensitive
material first and then quickly transfer to another tool to deposit
a protective layer. However, modern high performance materials
frequently cannot sustain even a short exposure to air during
transfer from a process chamber to, for example, a substrate
storage cassette.
[0004] A significant number of manufacturing processes employ
hazardous or harmful chemicals which can have a negative impact on
both the health of individuals involved in manufacturing process
and on stability of other manufacturing steps within a factory
environment. The chemicals may be isolated from the
environment.
[0005] Therefore, there is a need for a manufacturing apparatus
which can process a substrate which can meet performance and
reliability requirements, reduce damage to sensitive materials, and
prevent at least some health hazards associated with a typical
electronic device manufacturing process.
BRIEF DESCRIPTION OF DRAWINGS
[0006] Various ones of the appended drawings merely illustrate
various embodiments and examples of the subject matter presented
herein. Therefore, the appended drawings are provided to allow a
person of ordinaty skill in the art to better understand the
concepts disclosed herein, and therefore cannot be considered as
limiting a scope of the disclosed subject matter.
[0007] FIG. 1 shows an example of a system to extract waste from a
controlled or sealed environment with reduced air backflow into the
controlled environment;
[0008] FIG. 2 shows an embodiment of a method of extracting waste
from a controlled or sealed environment without air backflow into
the controlled environment;
[0009] FIG. 3 shows an example of a processing system layout with
process chambers;
[0010] FIG. 4 shows another an example of a configuration of a
processing system;
[0011] FIG. 5 shows an example of a process tool;
[0012] FIG. 6 shows an example of a processing system; and
[0013] FIG. 7 shows an example of a process flow-through
environment controlled processing system where a final encapsulated
substrate can be exposed to air and transferred to other processing
systems.
DETAILED DESCRIPTION
[0014] The description that follows includes illustrative systems,
methods, techniques, and sequences, that embody various aspects of
the subject matter described herein. In the following description,
for purposes of explanation, numerous specific details are set
forth to provide an understanding of various embodiments of the
subject matter. It will be evident, however, to those skilled in
the ad, that embodiments of the subject matter may be practiced
without these specific details. Further, well-known methods,
protocols, structures, and techniques have not been shown in
detail.
[0015] As used herein, the term "or" may be construed in either an
inclusive or exclusive sense. Similarly, the term "exemplary" is
construed merely to mean an example of something, or an exemplar,
and not necessarily a preferred or ideal means of accomplishing a
goal. Additionally, although various embodiments discussed below
focus on particular processing techniques, systems, and methods,
the embodiments are given merely for clarity in disclosure. Thus,
various types of processing techniques, systems, and methods are
considered as being within a scope of the subject matter
described.
Controlled Ambient Process Tool and Components.
[0016] In the manufacturing of electronic and optical devices, such
as image sensors, solar cells, displays, and other products,
fabrication using materials and chemicals dispersed in the solution
phase offers advantages in cost, scale, and the potential for
materials self-organization.
[0017] The atmosphere under which processing is carried out can
play a role in the properties of the end product. As one example,
certain reagents and particles may be prone to oxidation. For this
reason, manufacturing in a controlled environment potentially one
having an atmosphere that excludes oxygen and humidity, such as,
for example, a dry nitrogen or argon environment--may be
desirable.
[0018] In processing materials from the solution phase, inevitably
some poi on of material may not be adsorbed onto the final
substrate, but instead becomes a waste product of the manufacturing
process. This can be true of solvents used to introduce materials
or chemicals onto a substrate. In certain cases, the solvents are
not to be incorporated into the final product, but instead serve as
delivery vehicles for chemicals solvated in, or particles dispersed
in, the solvent. It may also be true of some portion of the
materials that are intended to make up the final product, for some
fraction of materials introduced in the solution phase may not
reach, or be finally incorporated onto, the final substrate or
product.
[0019] Therefore, in a manufacturing flow, it may be desirable to
offer a means of removing waste solvents an for materials, and to
do so in a manner that preserves a desired processing
environment.
[0020] FIG. 1 shows an example of a system to extract waste from a
controlled or sealed environment with reduced air backflow into the
controlled environment; thereby permitting preservation of a
desired process environment within a liquid process chamber.
[0021] Referring to FIG. 1, region (1) refers to a controlled
environment containing region (2), a liquid process chamber.
Element number (3) is a liquid process drain that allows waste
resultant from processing in region (2) to be conveyed to a sealed
waste container (4). The sealed waste container (4) may, in
embodiments, provide the same controlled environment as that in
regions (1) and (2).
[0022] V1 is a valve that regulates the flow of gas and material
from the liquid process chamber (2) to the sealed waste container
(4). V2 is a valve that regulates the backflow of gas and material
from the sealed waste container; and also to an exhaust line (5).
V3 is a valve that regulates the flow of gas and material from the
lines, controlled by V2 and V1, that connects the sealed waste
container and the liquid process chamber, and that is also
connected to exhaust line (5). V4 is a valve that connects the
sealed waste container (5) to a drain (6) for removal of the waste
material.
[0023] With continuing reference to FIG. 1, FIG. 2 depicts an
embodiment of a method of extracting waste from a controlled or
sealed environment without air backflow into the controlled
environment; thereby permitting preservation of a desired process
environment within the liquid process chamber.
[0024] In a first interval (1), known as the Dispense interval a
liquid, potentially containing a material, is dispensed onto a
substrate. In a second interval (2), known as the Drying interval,
the liquid is allowed to at least partially evaporate to result in
a partially or completely dry substrate. In a third interval (3),
known as the idle interval, the lines are permitted to return to an
ambient determined by the environment in the liquid process chamber
and the waste chamber. In a fourth interval (4), known as the
Draining interval, waste is removed from the sealed waste container
and is communicated to the drain.
[0025] In embodiments, during interval (1) Dispense, liquid is
dispensed onto the substrate in the liquid process chamber. V1 is
open to permit excess liquid to be conveyed from the liquid process
chamber to the sealed waste container. V2 is open to permit
pressures to remain normalized during this process, to permit the
flow of liquid from the liquid process chamber into the sealed
waste container. V3 is closed to prevent or reduce undesired
backflow of ambient air through the exhaust line. V4 is closed to
prevent or reduce undesired backflow of ambient air from the
drain.
[0026] In embodiments, during interval (2) Drying, the material
deposited onto the substrate is permitted to dry (e.g., for its
solvent to evaporate). V1 and V2 may be closed since no liquid
material is being communicated to the sealed waste container during
this interval, it having been so communicated during interval (1).
V3 is open to permit the egress of solvent-rich vapor from the
liquid process chamber to the exhaust. V4 may be closed to preserve
the environment within the liquid process chamber.
[0027] In embodiments, during interval (3) Idle, all valves are
closed. This interval gives a period of time during which all
relevant lines, and all relevant chambers, can return to the
desired process environment such as provided by sources of certain
ambient gases, such as N.sub.2, Argon, etc.
[0028] In embodiments, during interval (4) Draining, V1 and V2 and
V3 are off since no liquid waste is being transferred from the
liquid process chamber to the sealed waste container; and V4 is
open in order to communicate waste from the sealed waste container
to the drain. By closing V1, V2, and V3 during this interval, the
desired ambient is preserved in liquid process chamber at all
times.
[0029] FIG. 3 shows an example of a processing system layout where
all process chambers (4), substrate loading (2) and substrate
transfer (6) modules, and facilities (e.g., electronics,
pneumatics, and liquid handling) modules (7), including substrate
transfer mechanism (5) may be enclosed in a gas-impermeable shell
(1). The gas impermeable shell may be made of stainless steel,
aluminum, plastic, or other similar materials. Each of the process
chambers (4) and loading (2) modules can be isolated by agate (3)
(e.g., a transfer gate) to prevent chemical vapor
cross-contamination between modules.
[0030] Consumable materials, such as gases and liquids, are
delivered to the system via conventional pressurized supply lines
isolated from the processing system using isolation valves. The
exhaust system (8) handles process vapors which may be neutralized
or filtered in a hazardous material treatment module (9).
[0031] FIG. 4 shows another an example of a configuration of a
processing system where each module (2), (4), (6) has its own
isolation shell (1) and each process chamber is isolated from an
adjacent module or ambient using agate (3). Auxiliary modules (7)
in the system are located outside the sealed enclosure and allow
easy maintenance and service.
[0032] FIG. 5 shows an example of a process tool where a loading
module (is a conventional substrate cassette module, such as, for
example, a Front Opening Universal Pod (FOUP), a Standard
Mechanical Inter Face (SMIF) pod, or an open cassette. As all
environment sensitive processes may be carried out inside sealed
(1) modules, the loading module is separated from process
environment by using sealed loadlock chamber (10).
[0033] FIG. 6 shows an example of a processing system consisting of
a conventional loading module (2), isolated process modules (4),
conventional substrate transfer module (6), and conventional
substrate transfer mechanism (5). In order to prevent substrate
exposure to air during transfer from one process chamber to another
process chamber, a substrate may be protected from air by a
mechanism (11) which provides continuous flow of neutral gas such
as nitrogen over the substrate surface. Such configuration allows
utilization of less expensive conventional modules thus reducing
total cost of ownership of the processing system.
[0034] FIG. 7 shows an example of a process flow-through
environment controlled processing system where a final encapsulated
substrate can be exposed to air and transferred to one or more
other processing systems.
[0035] Step one of an example of a process flow is a substrate
transfer from a substrate cassette (12) holding multiple substrates
which are moved into one of the first types of process chambers
(13) through a gate (not described here) by a substrate transfer
mechanism motion (17).
[0036] Step two of the process is substrate treatment in one of the
chambers (13) to clean the substrate, to etch, to degas, or to
activate the surface.
[0037] Step three of the process is substrate transfer (18) to one
of the process chambers (14).
[0038] Step four of the process is deposition of a film in chambers
(14).
[0039] Step five is substrate transfer (19) to one of the process
chambers (15).
[0040] Step six is a substrate treatment in process chambers
(15).
[0041] Step seven is substrate transfer (19) to process chambers
(14). Steps six and seven can be repeated multiple times for the
purpose of deposition of thick films or stack of films with
different compositions.
[0042] Step eight is substrate transfer (20) to one of the process
chambers (16).
[0043] Step nine is a substrate treatment in process chambers (16)
for the purpose of creating a final protective layer.
[0044] Step ten is a substrate transfer (21) to a substrate
cassette (12).
[0045] Various examples and embodiments have been provided herein.
In one example, system for liquid processing is provided. The
system comprises a liquid processing chamber; a first
valve-controlled line; a sealed waste container; and a second
valve-controlled line, the liquid processing chamber being coupled
to the sealed waste container using the first valve-controlled
line, the sealed waste container being coupled to a drain using the
second valve-controlled line.
[0046] In another example, a method of liquid processing is
provided. The method comprises during a first interval, liquid is
dispensed onto a substrate, and excess liquid and material travel
to a sealed waste container; during a second interval, drying the
liquid; during a third interval, the process environment in lines
and chambers is permitted to return to ambient; and during a fourth
interval, draining waste liquid from the sealed waste container to
a drain, during the first interval, liquids and gases are permitted
to flow between the liquid process chamber and the sealed waste
container, during the second, third, and fourth intervals, liquids
and gases are substantially prevented from flowing between the
liquid process chamber and the sealed waste container.
[0047] In another example, a substrate processing system is
provided. Ther substrate processing system comprises multiple
process chambers, substrate handling environment and components,
and substrate loading stations where all components of the system
operate in controlled atmosphere.
[0048] In another example, a substrate processing system where all
components are enclosed in one enclosure.
[0049] In another example, a substrate processing system is
provided where each component is isolated from the environment but
prevents or reduces substrate exposure to the environment during
substrate handling.
[0050] In another example, a substrate processing system is
provided that is configured to deliver substrates with an
anticorrosion protective coating.
[0051] In various embodiments, the substrates may be comprised of
one or more substrates that are semiconductor wafers, solar panels,
LED, LCD, OLED panels, and other substrates where films are
deposited.
[0052] In various embodiments, the multiple process chambers are
liquid, thermal, and/or vapor phase chambers. The liquid process
chambers can be employing spin-on, spin-cast, drop-cast, spray, or
ink-jet technologies. Thermal process chambers are capable of
programmable thermal processing (e.g., temperature, pressure, gas)
of substrates in vacuum, atmospheric pressure, or pressures above
atmospheric. Vapor phase chambers may employ vapor phase
condensation, chemical vapor deposition, atomic layer deposition,
molecular layer deposition, pulsed laser deposition, and/or
physical vapor deposition technologies. Both thermal and vapor
phase chambers may provide a capability of changing substrate
temperature in-situ.
[0053] In various embodiments, all components may be isolated from
the ambient and provide capability to fill components with
non-corrosive gas or chemical vapor.
[0054] In one example, a vacuum chamber with a heated (and/or
cooled) substrate holder for vapor phase deposition of thin films
is provided where the substrate is placed into the chamber at low
(e.g., room) temperature in a controlled environment and
consequently film is deposited when the substrate reaches a
predetermined temperature.
[0055] In one example, a vacuum chamber is provided where more than
one chemical precursor is a vapor form that can be delivered into a
chamber either sequentially, at the same time, or in a mixed
mode.
[0056] In one example, a vacuum chamber is provided where a
substrate is placed on a heated substrate holder after reaching
predetermined environment conditions (e.g., vacuum, pressure, gas
flow) inside a sealed chamber.
[0057] In one example, a vacuum chamber is provided where a
substrate is removed from a heated substrate holder before reaching
predetermined environment conditions (e.g., vacuum, pressure, gas
flow) inside sealed chamber prior to removing substrate from a
vacuum chamber.
[0058] In one example, a method of a thin film encapsulation is
provided utilizing a sequence of liquid processes to form the film,
one or more thermal processes to stabilize the film, and one or
more vapor phase deposition process to prevent or reduce the film
from exposure to corrosive environment by executing all processes
within sealed environment filled with non-corrosive or reducing gas
or mixture of gases.
[0059] The embodiments illustrated herein are described in
sufficient detail to enable those skilled in the art to practice
the teachings disclosed. Other embodiments may be used and derived
therefrom, such that structural and logical substitutions and
changes may be made without departing front the scope of this
disclosure. The Detailed Description, therefore, is not to be taken
in a limiting sense, and the scope of various embodiments is
defined only by the appended claims, along with the full range of
equivalents to which such claims are entitled.
[0060] Moreover, plural instances may be provided for resources,
operations, or structures described herein as a single instance.
Additionally, boundaries between various resources, operations,
modules, and other components may be somewhat arbitrary, and
particular operations are illustrated in a context of specific
illustrative configurations. Other allocations of functionality are
envisioned and may fall within a scope of various embodiments of
the present invention. In general, structures and functionality
presented as separate resources in the exemplary configurations may
be implemented as a combined structure, resource, or component.
Similarly, structures and functionality presented as a single
resource may be implemented as separate resources.
[0061] These and other variations, modifications, additions, and
improvements fall within a scope of the inventive subject matter as
represented by the appended claims. The specification and drawings
are, accordingly, to be regarded in an illustrative rather than a
restrictive sense.
* * * * *