U.S. patent application number 13/722219 was filed with the patent office on 2013-06-27 for heat dissipating substrate and method of manufacturing the same.
This patent application is currently assigned to SAMSUNG ELECTRO-MECHANICS CO., LTD.. The applicant listed for this patent is SAMSUNG ELECTRO-MECHANICS CO., LTD.. Invention is credited to Jun Sik BAE, Cheol Ho HEO, Ki Ho SEO, Sang Hyun SHIN, Sang Hyuk SON.
Application Number | 20130160978 13/722219 |
Document ID | / |
Family ID | 48653407 |
Filed Date | 2013-06-27 |
United States Patent
Application |
20130160978 |
Kind Code |
A1 |
SHIN; Sang Hyun ; et
al. |
June 27, 2013 |
HEAT DISSIPATING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
Abstract
Disclosed herein are a heat dissipating substrate and a method
of manufacturing the same. The heat dissipating substrate includes:
a substrate that is formed of a metal material, wherein at least
one via hole is formed in the substrate; an insulating layer formed
on a surface of the substrate; a coating layer that is formed on an
inner wall surface of the via hole and is formed of a conductive or
non-conductive material; a plurality of metal patterns that are
formed on the insulating layer and are electrically separated from
one another; a metal layer that is extended from the metal patterns
to be formed on the coating layer formed on the inner wall surface
of the via hole; and a filling material that is formed of a
non-conductive material and is filled between the metal layers in
the via hole.
Inventors: |
SHIN; Sang Hyun; (Suwon,
KR) ; BAE; Jun Sik; (Changwon, KR) ; SON; Sang
Hyuk; (Busan, KR) ; SEO; Ki Ho; (Suwon,
KR) ; HEO; Cheol Ho; (Busan, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG ELECTRO-MECHANICS CO., LTD.; |
Suwon |
|
KR |
|
|
Assignee: |
SAMSUNG ELECTRO-MECHANICS CO.,
LTD.
Suwon
KR
|
Family ID: |
48653407 |
Appl. No.: |
13/722219 |
Filed: |
December 20, 2012 |
Current U.S.
Class: |
165/133 ;
205/199; 427/123; 427/239; 427/556 |
Current CPC
Class: |
H01L 2224/45139
20130101; H01L 2224/48091 20130101; H01L 2224/48091 20130101; H05K
2201/10106 20130101; H01L 33/486 20130101; H05K 1/053 20130101;
H01L 2224/48227 20130101; F28F 21/084 20130101; H01L 2924/00
20130101; H01L 2924/00014 20130101; H01L 2924/00012 20130101; H01L
2924/00014 20130101; H01L 2924/181 20130101; H01L 33/62 20130101;
H01L 2224/45139 20130101; H05K 3/445 20130101; H01L 2933/0075
20130101; H01L 33/641 20130101; H01L 2224/45139 20130101; H01L
2924/181 20130101 |
Class at
Publication: |
165/133 ;
427/239; 427/556; 427/123; 205/199 |
International
Class: |
F28F 21/08 20060101
F28F021/08 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 21, 2011 |
KR |
10-2011-0139245 |
Claims
1. A heat dissipating substrate, comprising: a substrate that is
formed of a metal material, wherein at least one via hole is formed
in the substrate; an insulating layer formed on a surface of the
substrate; a coating layer that is formed on an inner wall surface
of the via hole and is formed of a conductive or non-conductive
material; a plurality of metal patterns that are formed on the
insulating layer and are electrically separated from one another; a
metal layer that is extended from the metal patterns to be formed
on the coating layer formed on the inner wall surface of the via
hole; and a filling material that is formed of a non-conductive
material and is filled between the metal layers in the via
hole.
2. The heat dissipating substrate according to claim 1, wherein the
substrate is formed of a metal having an excellent thermal
conductivity and is formed of aluminum (Al).
3. The heat dissipating substrate according to claim 1, wherein the
insulating layer formed on the surface of the substrate is formed
of an oxide coating layer (Al.sub.2O.sub.3) by anodizing.
4. The heat dissipating substrate according to claim 1, wherein the
via hole is formed by using a mechanical method such as drilling or
punching or a chemical method such as etching.
5. The heat dissipating substrate according to claim 1, wherein the
metal patterns are formed on portions of an upper surface of the
substrate that are exposed by removing a portion of the insulating
layer.
6. The heat dissipating substrate according to claim 1, wherein the
filling material is formed of a non-conductive material such as
epoxy or polymer.
7. A method of manufacturing a heat dissipating substrate, the
method comprising: preparing a metal substrate and forming at least
one via hole that passes through the metal substrate; forming an
insulating layer on a surface of the metal substrate including the
via hole; forming a coating layer using a non-conductive material
on an inner wall surface of the via hole, on which the insulating
layer is formed; forming a metal layer on the coating layer formed
on the inner wall surface of the via hole and the insulating layer
formed on the surface of the metal substrate; forming a plurality
of metal patterns by patterning the metal layer formed on the
insulating layer formed on the surface of the metal substrate; and
injecting a filling material formed of a non-conductive material
between coating layers formed on the inner wall surface of the via
hole.
8. The method according to claim 7, wherein in the forming of the
insulating layer on a surface of the metal substrate, the
insulating layer is formed of an oxide coating layer by
anodizing.
9. The method according to claim 7, wherein the forming of the
coating layer on an inner wall surface of the via hole includes:
filling a non-conductive material in the via hole through a
plugging process; and forming a through hole in the non-conductive
material filled in the via hole.
10. The method according to claim 1, wherein the non-conductive
material filled in the via hole is epoxy or polymer, and the
through hole is formed by drilling or laser processing.
11. A method of manufacturing a heat dissipating substrate, the
method comprising: preparing a metal substrate and forming at least
one via hole that passes through the metal substrate; forming an
insulating layer on a surface of the metal substrate including the
via hole; forming a coating layer formed of a conductive material
on an inner wall surface of the via hole, on which the insulating
layer is formed; forming a metal layer on the coating layer formed
on the inner wall surface of the via hole and the insulating layer
formed on the surface of the metal substrate; forming a plurality
of metal patterns by patterning the metal layer formed on the
insulating layer formed on the surface of the metal substrate; and
injecting a filling material formed of a non-conductive material
between the coating layers formed on the inner wall surface of the
via hole.
12. The method according to claim 11, wherein the forming of the
coating layer on an inner wall surface of the via hole includes:
fill plating an inner portion of the via hole using a conductive
material through a plating process; and forming a through hole in
the fill-plated conductive material formed in the via hole.
13. The method according to claim 11, wherein in the forming of the
coating layer on an inner wall surface of the via hole, the
conductive material is formed, as a seed layer, only on the inner
wall surface of the via hole through a plating process.
Description
CROSS REFERENCE(S) TO RELATED APPLICATIONS
[0001] This application claims the benefit under 35 U.S.C. Section
119 of Korean Patent Application Serial No. 10-2011-0139245,
entitled "Heat Dissipating Substrate and Method of Manufacturing
the Same" filed on Dec. 21, 2011, which is hereby incorporated by
reference in its entirety into this application.
BACKGROUND OF THE INVENTION
[0002] 1. Technical Field
[0003] The present invention relates to a heat dissipating
substrate and a method of manufacturing the same, and more
particularly, to a heat dissipating substrate formed of a metal,
wherein a surface of the heat dissipating substrate is anodized,
and an inner wall surface of a via of the heat dissipating
substrate is plugged using a conductive or non-conductive material,
and a method of manufacturing the heat dissipating substrate.
[0004] 2. Description of the Related Art
[0005] In general, various light emitting units such as a light
emitting diode (LED) are mounted on a substrate, and when they are
driven as a light-emitting body, heat is generated due to light
emission, and the heat needs to be effectively dissipated to
increase the lifespan and efficiency of the light emitting
units.
[0006] In particular a LED has low power consumption and high
luminance, and thus is widely used as a light source for homes and
industrial purposes.
[0007] Recently, a LED is used as a light source of illuminating
apparatuses and backlights for liquid crystal displays (LCD). The
LED is supplied in a package which is easily mounted in various
devices such as illuminating apparatuses.
[0008] A LED package has a structure in which the LED package is
mounted on a substrate and a LED is encapsulated by using a molding
material. Here, not only are the functions of the LED package of
protecting the LED and providing a connection to a light emitting
device important, but heat dissipation performance of the LED
package for dissipating heat from the LED is also an important
evaluation standard for evaluating LED packages.
[0009] Since a contact surface of a LED with a substrate is the
largest, and heat may preferably be dissipated through the
substrate, and various heat dissipation structures for dissipating
heat through a substrate are being developed.
[0010] The most effective way of dissipating heat of a light
emitting unit is to include a metal substrate so that heat
generated in the light emitting unit is dissipated through the
metal substrate to the outside, and accordingly, various researches
are being conducted into a heat dissipating substrate which may
increase performance and lifetime of a LED, by simplifying a
structure of the heat dissipating substrate and improving heat
dissipation performance thereof.
RELATED ART DOCUMENT
Patent Document
[0011] (Patent Document 1) Korean Patent Laid-Open Publication No.
2010-016737
SUMMARY OF THE INVENTION
[0012] An object of the present invention is to provide a heat
dissipating substrate in which an inner wall surface of a via
formed in a metal substrate is plugged using a conductive or
non-conductive material so as to fill an inner portion of the via
using the non-conductive material, thereby reducing a size of the
via hole, and a method of manufacturing the same.
[0013] According to an exemplary embodiment of the present
invention, there is provided a heat dissipating substrate,
comprising: a substrate that is formed of a metal material, wherein
at least one via hole is formed in the substrate; an insulating
layer formed on a surface of the substrate; a coating layer that is
formed on an inner wall surface of the via hole and is formed of a
conductive or non-conductive material; a plurality of metal
patterns that are formed on the insulating layer and are
electrically separated from one another; a metal layer that is
extended from the metal patterns to be formed on the coating layer
formed on the inner wall surface of the via hole; and a filling
material that is formed of a non-conductive material and is filed
between the metal layers in the via hole.
[0014] The substrate may be formed of a metal having an excellent
thermal conductivity, and be formed of aluminum (Al).
[0015] The insulating layer formed on the surface of the substrate
may be formed of an oxide coating layer (Al.sub.2O.sub.3) by
anodizing.
[0016] The via hole may be formed by using a mechanical method such
as drilling or punching or a chemical method such as etching.
[0017] According to another exemplary embodiment of the present
invention, there is provided a method of manufacturing a heat
dissipating substrate, the method comprising: preparing a metal
substrate and forming at least one via hole that passes through the
metal substrate; forming an insulating layer on a surface of the
metal substrate including the via hole; forming a coating layer
using a non-conductive material on an inner wall surface of the via
hole, on which the insulating layer is formed; forming a metal
layer on the coating layer formed on the inner wall surface of the
via hole and the insulating layer formed on the surface of the
metal substrate; forming a plurality of metal patterns by
patterning the metal layer formed on the insulating layer formed on
the surface of the metal substrate; and injecting a filling
material formed of a non-conductive material between coating layers
formed on the inner wall surface of the via hole.
[0018] In the forming of the insulating layer on a surface of the
metal substrate, the insulating layer may be formed of an oxide
coating layer by anodizing.
[0019] The forming of the coating layer on an inner wall surface of
the via hole may include: filling a non-conductive material in the
via hole through a plugging process; and forming a through hole in
the non-conductive material filled in the via hole.
[0020] The non-conductive material filled in the via hole may be
epoxy or polymer, and the through hole may be formed by drilling or
laser processing.
[0021] According to another exemplary embodiment of the present
invention, there is provided a method of manufacturing a heat
dissipating substrate, the method comprising: preparing a metal
substrate and forming at least one via hole that passes through the
metal substrate; forming an insulating layer on a surface of the
metal substrate including the via hole; forming a coating layer
formed of a conductive material on an inner wall surface of the via
hole, on which the insulating layer is formed; forming a metal
layer on the coating layer formed on the inner wall surface of the
via hole and the insulating layer formed on the surface of the
metal substrate; forming a plurality of metal patterns by
patterning the metal layer formed on the insulating layer formed on
the surface of the metal substrate; and injecting a filling
material formed of a non-conductive material between the coating
layers formed on the inner wall surface of the via hole.
[0022] The forming of the coating layer on an inner wall surface of
the via hole may include: fill plating an inner portion of the via
hole using a conductive material through a plating process; and
forming a through hole in the fill-plated conductive material
formed in the via hole.
[0023] In the forming of the coating layer on an inner wall surface
of the via hole, the coating layer may be formed as a seed layer
only on the inner wall surface of the via hole by using a
conductive material and a plating process.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] FIG. 1 is a cross-sectional view illustrating a heat
dissipating substrate according to an embodiment of the present
invention;
[0025] FIG. 2 is a cross-sectional view of a heat dissipating
substrate according to an embodiment of the present invention, on
which a light emitting unit is mounted;
[0026] FIGS. 3A through 3H are schematic views illustrating a
method of manufacturing a heat dissipating substrate according to
an embodiment of the present invention; and
[0027] FIGS. 4A through 4G are schematic views illustrating a
method of manufacturing a heat dissipating substrate according to
another embodiment of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0028] Hereinafter, the technical configuration of the light
emitting diode package according to the present invention and the
effects thereof will be clearly understood from the detailed
description below with reference to the accompanying drawings in
which exemplary embodiments of the present invention are shown.
[0029] First, FIG. 1 is a cross-sectional view illustrating a heat
dissipating substrate 100 according to an embodiment of the present
invention.
[0030] As illustrated in FIG. 1, the heat dissipating substrate 100
may include a substrate 110 formed of a metal material, an
insulating layer 120 formed on a surface of the substrate 110, a
coating layer 130 formed on an inner wall surface of a via hole 111
formed in the substrate 110, a metal pattern 150 formed on the
insulating layer 120 formed on the surface of the substrate 110, a
metal layer 140 formed on the coating layer 130, and a filling
material 160 filled in inner portions of the metal layer 140.
[0031] The substrate 110 may be formed of a metal such as an
aluminum (Al) which is a representative metal having excellent
thermal conductivity, and at least one via hole 111 may be formed
on the substrate 110.
[0032] The via hole 111 may be formed by CNC drilling or etching.
Also, the via hole 111 may be used as an electrical connection
portion that electrically connects metal patterns 150 formed on
upper and lower surfaces of the substrate 110 which will be
described below.
[0033] The insulating layer 120 may be formed on the entire surface
of the substrate 110 including the inner wall surface of the via
hole 111. The insulating layer 120 may be formed on the substrate
110, which is formed of aluminum, using an oxide coating layer
(Al.sub.2O.sub.3) by anodizing. The anodizing may be performed by
using an organic acid, a sulfuric acid, or a mixture thereof.
[0034] Aluminum used to form the substrate 110 is a metal which is
easily obtainable at relatively low price, and has excellent
thermal conductivity, and an oxide coating layer formed on a
surface of the substrate 110 may also be formed using a thin
insulator that has a relatively high thermal conductivity of about
10 to 30 W/mK by anodizing, thereby providing low thermal
resistance.
[0035] Accordingly, compared to copper or ceramics which is used to
form a substrate according to the related art, not only has the
substrate 110 formed of aluminum excellent heat dissipation
performance but also the substrate 110 may be anodized relatively
easily, and thus the costs and time for processing may be
reduced.
[0036] The coating layer 130 is formed on the inner wall surface of
the via hole 111, and the coating layer 130 may be formed of a
conductive material such as a metal or a non-conductive material
such as epoxy or polymer.
[0037] When the coating layer 130 is formed of a conductive
material, the coating layer 130 may be formed by plating, and when
the coating layer 130 is formed of a non-conductive material, the
via hole 111 may be filled with a non-conductive material so as to
completely fill the via hole 111, and then a through hole is formed
by drilling or laser processing so that the coating layer 130 is
formed only on the inner wall surface of the via hole 111.
[0038] Also, the metal patterns 150 are electrically separated from
adjacent metal patterns on the insulating layer 120, and a portion
on the metal patterns 150 where a light emitting unit such as a LED
is to be mounted may be formed as an electrode portion. The metal
patterns 150 may be extended inwardly into the via hole 111 and be
formed as the metal layer 140 on the coating layer 130. The metal
patterns 150 may perform the function as an electrode and the
function of heat dissipation at the same time.
[0039] The metal patterns 150 may be formed on the insulating layer
120 as illustrated in FIG. 1, or alternatively, a portion of the
insulating layer 120 may be removed and the metal patterns 150 may
be formed on an exposed portion of an upper surface of the
substrate 110. In this case, a lower surface of the metal pattern
150 directly contacts the upper surface of the substrate 110, and a
LED is mounted on an upper surface of the metal pattern 150,
thereby further enhancing the effects of heat dissipation of the
LED.
[0040] As described above, the insulating layer 120, the coating
layer 130, and the metal layer 140 extended from the metal patterns
150 may be sequentially formed in the via hole ill, and a through
hole is formed between portions of the metal layer 140 so as to
fill a filling material 160 in the through hole. The filling
material 160 may be epoxy or polymer formed of a non-conductive
material, and the metal layer 140 formed on inner portions of the
via hole 111 is shorted by the filling material 160 to thereby
prevent a short circuit between the metal patterns 150.
[0041] Also, as described in the objective of the present
invention, as the insulating layer 120, the coating layer 130, and
the metal layer 140 are sequentially formed in the via hole 111
which is formed to have a relatively large size by drilling or
punching due to characteristics of the metal substrate 110, a
diameter of the via hole 111 may be reduced, and the filling
material 160 may be injected into the reduced via hole 111.
[0042] Consequently, when heat is dissipated through the substrate
110 which is formed of a metal material, due to the characteristics
of a metal substrate, the via hole 111 is constricted or expanded
by the heat, and here, by reducing the diameter of the via hole 111
by using the coating layer 130 formed on the inner wall surface of
the via hole 111, variation in the diameter of the via hole 111 due
to thermal deformation of the substrate 110 may be minimized.
[0043] Various types of light emitting units may be mounted on a
heat dissipating substrate having the above-described structure
according to the present invention, and a structure in which a LED
is mounted as a light emitting unit will be briefly described as an
example below.
[0044] FIG. 2 is a cross-sectional view of a heat dissipating
substrate according to an embodiment of the present invention, on
which a light emitting unit is mounted.
[0045] At least one via hole 111 is formed so that a light emitting
unit 200, for example, a LED (hereinafter referred to as a LED chip
200) may be mounted on a substrate 110 which is formed of a metal
material and on upper and lower surfaces of which metal patterns
150 are formed.
[0046] The LED chip 200 is a LED chip having a vertical electrode
structure, and one electrode (not shown) formed on the LED chip 200
is directly connected to the metal patterns 150, and the other
electrode (not shown) may be electrically connected to the metal
patterns 150, on which the LED chip 200 is not mounted, via a wire
210. Here, the metal patterns 150 connected to the LED chip 200 via
the wire 210 may be extended up to the lower surface of the metal
substrate 110 via the metal layer 140 that is extended to an inner
portion of the via hole 111.
[0047] Also, a molding unit 220 that covers the LED chip 200 and
the wire 210 may be formed on the substrate 110. The molding unit
220 may be formed to a desired form by using a silicon resin, an
epoxy resin, or an epoxy molding compound (EMC) or the like and by
using a method using an injection molding method, a transfer
molding method, or a pin gate molding method.
[0048] Hereinafter, a method of manufacturing the heat dissipating
substrate having the above-described structure will be
described.
[0049] FIGS. 3A through 3H are schematic views illustrating a
method of manufacturing a heat dissipating substrate according to
an embodiment of the present invention.
[0050] As illustrated in the drawings, first, a metal substrate 110
is prepared as illustrated in FIG. 3A. The metal substrate 110 may
be preferably an aluminum substrate that is gone through a washing
operation in which pollutants such as organic materials on a
surface thereof are washed off.
[0051] The metal substrate 110 may typically have a square shape,
or other various forms such as a rectangular or a circular shape
according to a processed aluminum substrate. In addition, a
thickness of the metal substrate 110 may preferably be about 0.1 mm
or greater in consideration of process reliability.
[0052] Next, as illustrated in FIG. 3B, at least one via hole 111
that passes through the metal substrate 110 is formed. The via hole
111 may be formed by drilling, punching, or etching.
[0053] Also, an insulating layer 120 may be formed on a surface of
the metal substrate 110 including the via hole 111 by
anodizing.
[0054] Next, a coating layer 130 formed of a non-conductive
material may be formed on an inner wall surface of the via hole
111, on which the insulating layer 120 is formed. The coating layer
130 may be formed by filling a resin material such as epoxy or
polymer which is a non-conductive material, in the via hole 111 on
which the insulating layer 120 is formed, and by forming a through
hole 131 that passes through a center portion of the non-conductive
material filled in the via hole 111, as illustrated in FIG. 3E.
Here, the through hole 131 may be formed by drilling or laser
processing.
[0055] Next, as illustrated in FIG. 3F, a metal layer 140 may be
formed on the insulating layer 120 of the metal substrate 110 that
includes the coating layer 130 formed on the inner wall surface of
the via hole 111. The metal layer 140 may be formed by using a
method such as electroplating, electroless plating, or metal
deposition.
[0056] While the metal layer 140 is formed, an inner portion of the
via hole 111 may be completely filled with the metal layer 140 or
the metal layer 140 may be formed as a thin layer on the coating
layer 130 on the inner wall surface of the via hole 111. When the
metal layer 140 is completely filled in the inner portion of the
via hole 111, a previous process, that is, a process (not shown) of
forming a through hole one more time so that the metal layer 140
filled in the via hole 111 is shorted, like a process of forming
the through hole 131 in the non-conductive material filled in the
via hole 111 may be performed.
[0057] As described above, by further forming the coating layer 130
and the metal layer 140 on the inner wall surface of the via hole
111, a size of the via hole 111 may be reduced, and variation in
the size of the via hole 111 due to constriction or expansion of
the metal substrate 110 due to thermal deformation may be
minimized.
[0058] Next, as illustrated in FIG. 3G, the filling material 160 is
injected into the inner portion of the metal layer 140 in the via
hole 111 so as to completely fill the inner portion of the via hole
111. Here, the filling material 160 may be a non-conductive
material such as epoxy or polymer.
[0059] Finally, as illustrated in FIG. 3H, the metal layer 140
formed on a surface of the insulating layer 120 may be patterned to
form a plurality of metal patterns 150 that are formed on the
insulating layer 120 formed on upper and lower surfaces of the
metal substrate 110 and are electrically separated.
[0060] FIGS. 4A through 4G are schematic views illustrating a
method of manufacturing a heat dissipating substrate according to
another embodiment of the present invention.
[0061] As illustrated in the drawings, first, a metal substrate 110
is prepared as illustrated in FIG. 4A. The metal substrate 110 may
be preferably an aluminum substrate that is gone through a washing
operation in which pollutants such as organic materials on a
surface thereof are washed off.
[0062] The metal substrate 110 may typically have a square shape,
or other various forms such as a rectangular or circular shape
according to a processed aluminum substrate. In addition, a
thickness of the metal substrate 110 may preferably be about 0.1 mm
or greater in consideration of process reliability.
[0063] Next, as illustrated in FIG. 4B, at least one via hole 111
that passes through the metal substrate 110 is formed. The via hole
111 may be formed by drilling, punching, or etching.
[0064] Also, as illustrated in FIG. 4C, an insulating layer 120 may
be formed on a surface of the metal substrate 110 including the via
hole 111 by anodizing.
[0065] Next, as illustrated in FIG. 4D, a coating layer 130 formed
of a conductive material may be formed on an inner wall surface of
the via hole 111 on which the insulating layer 120 is formed. The
coating layer 130 may be formed in the via hole 111 on which the
insulating layer 120 by using a plating process, and in detail, as
a seed layer on the insulating layer 120 on the inner wall surface
of the via hole 111 by electroplating or electroless plating.
[0066] Also, the coating layer 130 may be formed only on the inner
wall surface of the via hole 111 by fill-plating an inner portion
of the via hole 111 with a conductive material by plating, and then
by forming a through hole 131 in the conductive material filled in
the via hole 111. The through hole 131 may be formed by drilling or
etching.
[0067] Next, as illustrated in FIG. 4E, a metal layer 140 may be
formed on the insulating layer 120 of the metal substrate 110 that
includes the coating layer 130 formed on the inner wall surface of
the via hole 111. The metal layer 140 may be formed by
electroplating, electroless plating, or metal deposition.
[0068] Here, while the metal layer 140 is formed, the inner portion
of the via hole 111 may be completely filled with the metal layer
140 or the metal layer 140 may be formed as a thin layer on the
coating layer 130 on the inner wall surface of the via hole 111.
When the metal layer 140 is completely filled in the inner portion
of the via hole 111, a previous process, that is, a process of
forming a through hole one more time so that the metal layer 140
filled in the via hole 111 is shorted, like a process of forming
the through hole 131 in the non-conductive material filled in the
via hole 111 may be performed.
[0069] As described above, by further forming the coating layer 130
and the metal layer 140 on the inner wall surface of the via hole
111, a size of the via hole 111 may be reduced, and variation in
the size of the via hole 111 due to constriction or expansion of
the metal substrate 110 due to thermal deformation may be
minimized.
[0070] Next, as illustrated in FIG. 4F, the filling material 160 is
injected into the inner portion of the metal layer 140 in the via
hole 111 so as to completely fill the inner portion of the via hole
111. Here, a filling material 160 may be a non-conductive material
such as epoxy or polymer.
[0071] Finally, as illustrated in FIG. 4G, the metal layer 140
formed on a surface of the insulating layer 120 may be patterned to
form a plurality of metal patterns 150 that are formed on the
insulating layer 120 on upper and lower surfaces of the metal
substrate 110 and are electrically separated.
[0072] As described above, according to the heat dissipating
substrate and the method of manufacturing the heat dissipating
substrate according to the embodiments of the present invention,
heat generated in a light emitting member mounted on the upper
surface of the metal substrate may be efficiently dissipated
through the metal substrate.
[0073] In addition, a coating layer formed of a conductive or
non-conductive material is formed on an inner wall surface of a via
hole, and space inside the coating layer is filled, thereby
reducing a size of a via. Accordingly, variation in a diameter of
the via hole due to thermal deformation of a metal substrate
according to contraction or expansion of a metal material may be
minimized.
[0074] Although the preferred embodiments of the present invention
have been disclosed for illustrative purposes, those skilled in the
art will appreciate that various modifications, additions and
substitutions are possible, without departing from the scope and
spirit of the invention as disclosed in the accompanying claims.
Accordingly, such modifications, additions and substitutions should
also be understood to fall within the scope of the present
invention.
* * * * *