U.S. patent application number 13/360958 was filed with the patent office on 2013-05-30 for interposer and semiconductor package with noise suppression features.
This patent application is currently assigned to Taiwan Semiconductor Manufacturing Co., Ltd.. The applicant listed for this patent is Huan-Neng Chen, Yen-Jen Chen, Chewn-Pu Jou, Feng Wei Kuo, Hui Yu Lee, Yu-Ling Lin. Invention is credited to Huan-Neng Chen, Yen-Jen Chen, Chewn-Pu Jou, Feng Wei Kuo, Hui Yu Lee, Yu-Ling Lin.
Application Number | 20130134553 13/360958 |
Document ID | / |
Family ID | 48466063 |
Filed Date | 2013-05-30 |
United States Patent
Application |
20130134553 |
Kind Code |
A1 |
Kuo; Feng Wei ; et
al. |
May 30, 2013 |
INTERPOSER AND SEMICONDUCTOR PACKAGE WITH NOISE SUPPRESSION
FEATURES
Abstract
Interposer and semiconductor package embodiments provide for the
isolation and suppression of electronic noise such as EM emissions
in the semiconductor package. The interposer includes shield
structures in various embodiments, the shield structures blocking
the electrical noise from the noise source, from other electrical
signals or devices. The shields include solid structures and some
embodiments and decoupling capacitors in other embodiments. The
coupling structures includes multiple rows of solder balls included
in strips that couple the components and surround and contain the
source of electrical noise.
Inventors: |
Kuo; Feng Wei; (Zhudong
Township, TW) ; Lee; Hui Yu; (Hsin-Chu City, TW)
; Chen; Huan-Neng; (Taichung City, TW) ; Chen;
Yen-Jen; (Taipei City, TW) ; Lin; Yu-Ling;
(Taipei, TW) ; Jou; Chewn-Pu; (Chutung,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Kuo; Feng Wei
Lee; Hui Yu
Chen; Huan-Neng
Chen; Yen-Jen
Lin; Yu-Ling
Jou; Chewn-Pu |
Zhudong Township
Hsin-Chu City
Taichung City
Taipei City
Taipei
Chutung |
|
TW
TW
TW
TW
TW
TW |
|
|
Assignee: |
Taiwan Semiconductor Manufacturing
Co., Ltd.
Hsin-Chu
TW
|
Family ID: |
48466063 |
Appl. No.: |
13/360958 |
Filed: |
January 30, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
61565353 |
Nov 30, 2011 |
|
|
|
Current U.S.
Class: |
257/532 ;
257/659; 257/738; 257/E23.069; 257/E23.114; 257/E29.342 |
Current CPC
Class: |
H01L 2224/16225
20130101; H01L 24/13 20130101; H01L 2924/19104 20130101; H01L
23/552 20130101; H01L 2924/1421 20130101; H01L 23/49838 20130101;
H01L 24/16 20130101; H01L 2924/157 20130101; H01L 23/49827
20130101; H01L 2224/131 20130101; H01L 2924/15311 20130101; H01L
23/49816 20130101; H01L 23/66 20130101; H01L 24/14 20130101; H01L
23/5384 20130101; H01L 23/5383 20130101; H01L 23/3128 20130101;
H01L 2924/14 20130101; H01L 2223/6677 20130101; H01L 2924/15192
20130101; H01L 2924/19042 20130101; H01L 25/0655 20130101; H01L
23/147 20130101; H01L 2224/14135 20130101; H01L 2224/131 20130101;
H01L 2924/014 20130101; H01L 23/642 20130101 |
Class at
Publication: |
257/532 ;
257/738; 257/659; 257/E23.069; 257/E29.342; 257/E23.114 |
International
Class: |
H01L 29/92 20060101
H01L029/92; H01L 23/552 20060101 H01L023/552; H01L 23/498 20060101
H01L023/498 |
Claims
1. An interposer for connecting a semiconductor die to a printed
circuit board, said interposer comprising: a body having opposed
first and second surfaces, wherein a facing surface of said
semiconductor die is joined to said first surface of said
interposer by at least a strip of multiple rows of solder balls
that are disposed on, and extend along, said facing surface on
outer portions of said semiconductor die,
2. The interposer as in claim 1, wherein said at least a strip
comprises strips extending peripherally around a region including
an EM emission source disposed on said facing surface of said
semiconductor die and said rows of solder balls are parallel.
3. The interposer as in claim 2, wherein said EM emission source
comprises an RF device, said RF device being at least one of an RF
transmitter and an RF receiver.
4. The interposer as in claim 1, wherein said rows of solder balls
include three parallel rows.
5. The interposer as in claim 1, wherein said rows of solder balls
include two parallel rows and a repeating sequence of said solder
balls along a longitudinal direction of said strips includes solder
balls from alternating parallel rows of said two rows.
6. The interposer as in claim 1, further comprising a further
semiconductor die laterally spaced from said semiconductor die and
further joined to said first surface of said interposer.
7. The interposer as in claim 1, wherein each of said multiple rows
of solder balls includes pairs of stacked solder balls arranged in
said rows, each said pair interposed between said facing surface of
said semiconductor die and said first surface of said
interposer.
8. The interposer as in claim 1, wherein, at each lengthwise
location along a length of said strip, at least a portion of one of
said solder balls is present at a location across a width of said
strip.
9. A semiconductor package comprising: a printed circuit board; a
semiconductor die; and an interposer interposed between said
printed circuit board and said semiconductor die, said interposer
having first and second opposed surfaces; and said first surface
coupled to said printed circuit board and wherein a facing surface
of said semiconductor die is joined to said second surface of said
interposer by at least a strip of multiple rows of solder balls
that extend along said facing surface on outer portions of said
semiconductor die.
10. The semiconductor package as in claim 9, wherein said multiple
rows are parallel rows and further comprising a plurality of vias
extending through said interposer from said first surface to said
second surface and a package substrate interposed between said
first surface of said interposer and said printed circuit
board.
11. The semiconductor package as in claim 9, wherein said at least
a strip comprises strips extending peripherally around a region of
said facing surface of said semiconductor die, each said strip
including two of said rows, and wherein a repeating sequence of
said solder balls along a longitudinal direction of each of said
strips includes solder balls from alternating rows of said two
rows.
12. The semiconductor package as in claim 11, wherein said region
includes an EM emission source.
13. An interposer for connecting a semiconductor die to a printed
circuit board, said interposer comprising: a body having opposed
first and second surfaces and a plurality of conductive layers
therein, said semiconductor die joined to said first surface of
said interposer at a first location, said first location comprising
a geometric portion of said interposer that faces said
semiconductor die and wherein said interposer includes an internal
electromagnetic shield in said first location, said internal
electromagnetic shield being a capacitive device formed of said
conductive layers.
14. The interposer as in claim 13, wherein said plurality of
conductive layers comprise metal layers and said capacitive device
is a metal plate capacitor formed of overlying metal plates formed
from said metal layers.
15. The interposer as in claim 13, wherein said plurality of
conductive layers comprise metal layers and said capacitive device
is a metal-insulator-metal (MIM) capacitor with electrodes formed
of said metal layers.
16. The interposer as in claim 13, wherein said plurality of
conductive layers includes at least one metal layer and at least
one semiconductor layer and said capacitive device is a
metal-oxide-semiconductor (MOS) capacitor having one capacitor
plate formed of said at least one semiconductor layer and a further
capacitor plate formed of said at least one metal layer.
17. The interposer as in claim 13, wherein said plurality of
conductive layers comprise metal layers and said capacitive device
is a metal-oxide-metal (MOM) capacitor formed of two capacitor
electrodes, each including a plurality of digital leads of at least
one of said metal layers.
18. The interposer as in claim 13, wherein said plurality of
conductive layers comprise metal layers and said capacitive device
is a metal-oxide-metal (MOM) capacitor formed of two capacitor
electrodes formed of a first metal layer of said plurality of metal
layers, a first of said two capacitor electrodes including a
plurality of first parallel leads coupled together and a second of
said two capacitor electrodes including a plurality of second
parallel leads coupled together, said first parallel leads disposed
alternatingly between adjacent ones of said second parallel
leads.
19. The interposer as in claim 13, wherein said plurality of
conductive layers comprise metal layers and said capacitive device
is a metal-oxide-metal (MOM) capacitor formed of two capacitor
electrodes, a first of said two capacitor electrodes formed of a
first metal layer of said metal layers and including a plurality of
first parallel leads coupled together and a second of said two
capacitor electrodes formed of a second metal layer of said metal
layers and including a plurality of second parallel leads coupled
together, said first and second parallel leads disposed
perpendicular to one another.
20. The interposer as in claim 13, wherein said interposer includes
an electrical circuit therein and said capacitive device is a
decoupling capacitor that decouples one part of said electrical
circuit from another part of said electrical circuit.
21. An interposer for connecting a semiconductor die to a printed
circuit board, said interposer comprising: a substrate body having
opposed first and second surfaces; a plurality of conductive layers
disposed in a dielectric material on said substrate body, wherein
one of said conductive layers includes a first metal lead and a
further of said conductive layers includes a second metal lead,
wherein said first metal lead is shielded from said second metal
lead by a shield including portions of at least one interposed
conductive layer of said conductive layers; said first metal lead
extending along a longitudinal direction of said interposer and
said shield extending continuously laterally across at least a
majority of a transverse direction of said interposer between said
first and second metal leads; and wherein said conductive layers
are formed of metal materials or semiconductor materials.
22. The interposer as in claim 21, further comprising a plurality
of vias extending through said interposer from said first surface
to said second surface; and wherein each said interposed conductive
layer is coupled to ground.
23. The interposer as in claim 21, wherein said shield includes a
plurality of said interposed conductive layers coupled together by
conductive contacts or semiconductor contacts.
24. The interposer as in claim 21, wherein said shield forms a
continuous member of said metal materials or semiconductor
materials, and there is no dielectric path from said first metal
lead to said second metal lead through said shield.
25. The interposer as in claim 21, wherein said first metal lead
carries a noisy electrical signal and said second metal lead
carries a further signal and said shield shields said second metal
lead from electrical noise from said first metal lead.
26. The interposer as in claim 21, wherein said first metal lead is
disposed above said shield and said shield includes a width at
least twenty times as wide as a width of said first metal lead.
27. The interposer as in claim 21, wherein said shield is formed of
at least first and second interposed conductive layers of said
interposed conductive layers, each of said first and second
interposed layers formed in a checkerboard pattern and overlaid
such that said overlaid checkerboard patterns produce a solid
uninterrupted pattern as viewed from above said plurality of
conductive layers.
28. The interposer as in claim 27, wherein said first and second
interposed conductive layers are coupled together such that said
shield is a continuous solid body.
29. The interposer as in claim 27, wherein said first interposed
conductive layer comprises metal and said second interposed
conductive layer comprises polysilicon.
30. An interposer for connecting a semiconductor die to a printed
circuit board, said interposer comprising: a substrate body; a
plurality of conductive layers disposed in a dielectric material on
said substrate body; a first metal lead; and a shield surrounding
said first metal lead, said shield including at least one of
semiconductor materials, portions of said conductive layers and
further metal portions.
31. The interposer as in claim 30, wherein said first metal lead
extends along a longitudinal direction of said interposer and is
formed of an intermediate conductive layer of said plurality of
conductive layers and said shield covers opposed sides and top and
bottom of said first metal lead.
32. The interposer as in claim 30, further comprising a plurality
of through-silicon-vias extending through said interposer and
wherein said first metal lead carries an electrical signal and is a
portion of an intermediate conductive layer of said plurality of
conductive layers.
33. The interposer as in claim 32, wherein a lower portion of said
shield is a portion of a lower conductive layer of said plurality
of conductive layers, an upper portion of said shield is a portion
of an upper conductive layer of said plurality of conductive layers
and side portions of said shield include portions of said
intermediate conductive layer.
34. The interposer as in claim 33, wherein at least one of said
lower portion of said shield and said upper portion of said shield
is coupled to ground.
35. The interposer as in claim 30, wherein a further of said
conductive layers includes a second metal lead that is coupled to a
source of electrical noise, said second metal lead disposed outside
said shield.
36. The interposer as in claim 35, wherein said interposer is
coupled to a semiconductor die and wherein said second metal lead
is coupled to one of an RF receiver, an RF transmitter and an
inductor formed on said semiconductor die.
Description
RELATED APPLICATION
[0001] This application claims the benefit of U.S. Provisional
Patent Application No. 61/565,353, filed Nov. 30, 2011, the
contents of which are incorporated by reference as if set forth in
its entirety.
TECHNICAL FIELD
[0002] This disclosure relates to semiconductor device packages and
their components.
BACKGROUND
[0003] Integrated circuits ("ICs") are incorporated into many
electronic devices. IC packaging has evolved such that multiple ICs
may be vertically stacked in so-called three-dimensional ("3D")
packages in order to save horizontal area on a printed circuit
board ("PCB"). An alternative packaging technique, referred to as a
2.5D package, may use an interposer, which may be formed from a
semiconductor material such as silicon, for coupling one or more
semiconductor die to a PCB. A plurality of IC or other
semiconductor die which may be of heterogeneous technologies, may
be mounted on the interposer. In addition to being joined to the
plurality of IC die, the interposer is also joined to the PCB and
oftentimes to a package substrate disposed between the PCB and the
interposer.
[0004] Many devices on one or more of the semiconductor die may
cause electrical noise and/or create electromagnetic ("EM")
interference by emitting EM emissions. RF devices and inductors are
examples of devices which can create electrical noise and
electromagnetic ("EM") interference. The noisy source such as an RF
transmitter or receiver generates electric noise in the form of EM
emissions that can propagate through air, or electrical noise in
signals carried in conductive structures such as metal leads. The
EM emissions and the noisy electrical signals carried in the
conductive leads, can impact various other signals and devices in
the interposer, the other semiconductor die coupled to the
interposer, and various components in all parts of the package.
Noisy electrical signals and EM emissions therefore present serious
problems in semiconductor packaging.
BRIEF DESCRIPTION OF THE DRAWING
[0005] The present disclosure is best understood from the following
detailed description when read in conjunction with the accompanying
drawing. It is emphasized that, according to common practice, the
various features of the drawing are not necessarily to scale. On
the contrary, the dimensions of the various features may be
arbitrarily expanded or reduced for clarity. Like numerals denote
like features throughout the specification and drawing.
[0006] FIG. 1 is a side view of an embodiment of a package
including an interposer;
[0007] FIG. 2 is a cross-sectional view of an embodiment of two
semiconductor die coupled to an interposer;
[0008] FIGS. 3A and 3B are cross-sectional and plan views,
respectively, of one embodiment of an interposer according to the
disclosure;
[0009] FIGS. 4A, 4B and 4C are each perspective views illustrating
an embodiment of an interposer according to the disclosure;
[0010] FIGS. 5A and 5B are cross-sectional and plan views,
respectively, of an embodiment of an interposer according to the
disclosure;
[0011] FIG. 6 is a cross-sectional view of an embodiment of an
interposer according to the disclosure;
[0012] FIGS. 7A and 7B show another embodiment of an interposer
according to the disclosure;
[0013] FIG. 8 is a cross-sectional view of an embodiment of an
interposer according to the disclosure;
[0014] FIG. 9 is a plan view of an embodiment of an interposer
according to the disclosure; and
[0015] FIG. 10 is a cross-sectional view of an embodiment of an
interposer according to the disclosure.
DETAILED DESCRIPTION
[0016] The embodiments of the disclosure provide interposer
structures, package assemblies including interposers, and couplings
between interposers and semiconductor die, designed to isolate
electromagnetic emission and other electrical noise by shielding
the electromagnetic emission and other electrical noise from other
electrical signals.
[0017] FIG. 1 shows an embodiment of a semiconductor packaging
arrangement. Interposer 2 is disposed between semiconductor die 4
and 6, and PCB (printed circuit board) 8. More particularly,
semiconductor die 4 and 6 are joined to first surface 10 of
interposer 2 and opposed second surface 12 of interposer 2 faces
PCB 8 and is directly joined to package substrate 16.
[0018] Package substrate 16 is joined to PCB 8 by solder balls 18
and to interposer 2 by solder bumps 20 in the illustrated
embodiment. Solder balls 24 join interposer 2 to semiconductor die
4 and 6. Solder balls are referred to broadly as such, but need not
be completely "ball shaped" as in the illustrated embodiments.
Solder balls are alternatively referred to as solder bumps and take
on various shapes in various embodiments. Solder balls physically
join the respective components together and electrically couple
electronic features of the respective components together.
[0019] Solder balls 18 have a size of about 200-300 um in one
embodiment and are BGA-type solder balls in one embodiment. A ball
grid array (BGA) is a type of surface-mount packaging used for
integrated circuits and BGA solder balls are the type and size of
solder balls commonly used in BGA applications and are known in the
art. Solder balls 18 are sized differently in other exemplary
embodiments. Solder bumps 20 are about 50-150 um in diameter in one
embodiment, but are sized differently in other exemplary
embodiments. Interposer 2 may include through-silicon vias ("TSVs")
that extend essentially from first surface 10 to second surface 12,
although TSV's that extend completely through interposer 2 are not
shown in the illustrated embodiment. TSV 26 is exemplary and
extends from solder bump 20 to an electrical lead coupled to solder
bump 24. This configuration is also exemplary. The layout shown in
FIG. 1 is intended to be exemplary only and to illustrate an
embodiment of an interposer included within a package that also
includes PCB 8 and semiconductor die 4 and 6. In other embodiments,
package substrate 16 is not used, and in other embodiments,
additional semiconductor die and other components are coupled to
interposer 2.
[0020] The various interposer embodiments described herein may be
utilized in the exemplary package arrangement setting of FIG. 1 or
in various other arrangements.
[0021] In one embodiment, interposer 2 includes a substrate body
made of silicon. In another embodiment, interposer 2 includes a
substrate body made of silicon-glass or other suitable materials
commonly used in the semiconductor art. Interposer 2 includes a
thickness suitable to meet the requirements of the specific
packaging application intended.
[0022] FIG. 2 is a cross-sectional view showing an arrangement of
interposer 30 and two semiconductor die 32 and 34. Interposer 30 is
as the previously described interposer 2. Interposer 30 includes
substrate body 36 formed of various suitable materials such as but
not limited to silicon, glass-silicon and other suitable substrate
materials commonly used in the semiconductor art. Interposer 30
also includes multiple conductive layers 38 separated by dielectric
layers 40 which are formed of various suitable dielectric
materials. Interposer 30 also includes TSVs 42 coupled to
conductive layers 38 and solder balls 44 for coupling to further
components in various exemplary embodiments. Solder balls 44 have a
size of about 200-300 um in one embodiment and a size of about
50-150 um in another embodiment, but are sized differently in other
exemplary embodiments. Semiconductor die 32 is formed of suitable
substrate material and includes circuitry thereon. Semiconductor
die 32 is an integrated circuit in one embodiment but may be any of
various other semiconductor devices in various other embodiments.
Semiconductor die 32 a P-type substrate that include N-well regions
48 and deep N-well region ("DNW") 50 in the illustrated embodiment,
but this is exemplary only. In one embodiment, semiconductor die 32
is a GPS (global positioning sensor) die that sends and receives RF
signals and includes in its circuitry EM (electromagnetic) emission
source 55. EM emission source 55 is an antenna in one embodiment.
In another embodiment, EM emission source 55 is a an RF receiver or
an RF transmitter on a GPS (global positioning sensor) chip. In yet
another embodiment, EM emission source 55 is an inductor, but EM
emission source may be various other circuit elements that create
EM emissions in other embodiments.
[0023] EM emissions 56 are indicated by arrows that show EM
emissions propagating through air and reaching semiconductor die
34. EM emissions 56 may adversely affect circuitry, signals and
devices on semiconductor die 34 or other signals or features of
interposer 30 or of components coupled to interposer 30. In other
embodiments, semiconductor die 32 includes an electrical signal
with electronic noise that is coupled to interposer 30 and travels
along a conductive lead formed in interposer 30. The electrical
signal with electrical noise may emanate from an RF transmitter, RF
receiver, antenna, inductor or other noise generating
structures.
[0024] The disclosure provides embodiments of an interposer such
that the interposer and/or the coupling between the interposer and
other components of the package, prevents EM emissions and
electrical noise from adversely affecting other semiconductor die,
i.e. the embodiments isolate the EM emissions and electrical noise,
particularly for semiconductor die coupled to the same interposer.
According to one embodiment illustrated in FIG. 2, the interposer
and/or the coupling between the interposer and other components
prevent EM emissions 56 from semiconductor die 32 from adversely
affecting semiconductor die 34.
[0025] FIGS. 3A and 3B represent cross-sectional and plan views of
an interposer embodiment according to the disclosure. Interposer 30
includes substrate body 36 with TSVs 42 and solder balls 44. These
features are exemplary only. Interposer 30 also includes multiple
conductive layers 38 with dielectric layers 40 between the
conductive layers 38. The four conductive layers 38 in the
illustrated embodiment are exemplary, and in other embodiments,
different numbers of conductive layers may be included. Conductive
layers 38 are formed of aluminum in one embodiment and conductive
layers 38 are formed of copper in another embodiment. In other
exemplary embodiments, conductive layers 38 are formed of alloys of
aluminum or copper or various other suitable conductive materials.
In other embodiments, conductive layers 38 are formed of
semiconductor materials such as polysilicon but are referred to
collectively as conductive layers 38. Various suitable dielectric
materials used in the semiconductor art are used as dielectric
layers 40.
[0026] Semiconductor the 32 includes EM emission source 55 which is
shown schematically in FIG. 3A and represents an electronic device
feature that generates EM emission. EM emission source 55 is an
antenna in one embodiment. In another embodiment, EM emission
source 55 is an RF receiver or an RF transmitter on a GPS (global
positioning sensor) chip. In another embodiment, EM emission source
55 is an inductor, but may be various other circuit elements that
create EM emissions in other embodiments. In one embodiment,
semiconductor die 32 is a GPS die that receives and transmits radio
signals. In another embodiment, semiconductor die 32 is a baseband
die. Semiconductor die 32 represents any of various other
integrated circuit or other semiconductor devices that have an EM
emission source.
[0027] Referring to both FIGS. 3A and 3B, semiconductor die 32 is
coupled to interposer 30 by strips of rows of solder bumps. FIG. 3B
shows four exemplary strips, one each along the outer portions of
the north, south, east and west sections of semiconductor die
32.
[0028] Each strip 60 includes at least two rows of solder balls
joining semiconductor die 32 to interposer 30, and the rows are
parallel in the exemplary embodiment of FIG. 3B.
[0029] In some embodiments, the strips 60 of solder balls surround
the region including EM emission source 55 when semiconductor die
32 is joined to interposer 30.
[0030] Strips 60 each include inner row 62 of solder balls. Each
strip 60 also includes at least another row of solder balls in
addition to inner row 62 in one embodiment. In one embodiment, a
second parallel row of solder balls consists of solder balls 64
(indicated by dashed lines in FIG. 3B) and in another embodiment, a
second parallel row of solder bumps is indicated by solder balls 66
(indicated by dashed lines in FIG. 3B). In one embodiment, strip 60
includes three parallel rows of solder balls. Each of solder balls
64 and 66 are shown in dashed lines to indicate that either or both
of the parallel rows of solder balls may be used in conjunction
with parallel row 62 of solder balls.
[0031] In the illustrated embodiment of FIG. 3A, inner row 62 of
solder bails 58 includes two stacked solder balls 58 and outer row
70 also includes two stacked solder balls 58. This is exemplary.
Outer row 70 may be indicative of either of the rows of solder
balls 64 and 66 shown in FIG. 3B or of another non-parallel row. In
other embodiments, the rows of solder balls may include only a
single solder ball joining semiconductor die 32 to interposer
30.
[0032] Solder balls 58 are referred to broadly as such, but need
not be completely "ball shaped" as in the illustrated embodiment.
Solder balls 58 are alternatively described as solder bumps and
take on various shapes in various embodiments. Solder balls 58 are
formed of any of various suitable solder materials used in the
packaging art. In one embodiment, solder balls 58 are round and
include a diameter of about 15-30 um but various other sizes are
used in other exemplary embodiments. The pitch of the solder balls
along the longitudinal direction of strips 60 is 30-60 micro-inches
in one embodiment, but various other pitches are used in other
exemplary embodiments. In one embodiment, the solder balls of the
parallel rows of solder balls are arranged along the longitudinal
direction of strip 60 such that an alternating sequence of solder
balls from the different rows of solder balls are present along the
longitudinal direction. This is exemplary only and other
arrangements are used in other exemplary embodiments.
[0033] In some embodiments, the solder balls of strips 60 are
arranged such that a solder ball is present in strip 60 along all
linear locations along the length of strip 60. In some embodiments,
strips 60 include an arrangement of solder balls not arranged in a
series of rows but such that strip 60 is populated with a solder
ball at some point across strip 60, at all linear locations along
its length. When semiconductor die 32 is joined to interposer 30,
the region surrounding EM emission source 55 has a solder ball
positioned between EM emission source 55 and each peripheral
location of the region surrounding EM emission source 55, in one
embodiment. In some embodiments, not illustrated, strips 60
intersect and completely surround the region including EM emission
source 55.
[0034] FIGS. 4A-4C illustrate three additional embodiments of an
interposer according to the disclosure. Like numbers denote like
features throughout the specification and the interposers 74, 90
and 100, illustrated in FIGS. 4A-4C, respectively, may be assembled
in a package embodiment such as shown in FIG. 1, for example.
Interposers 74, 90 and 100 each include conductive layers 38
isolated from one another by dielectric layers such as described in
conjunction with interposer 30, above.
[0035] FIG. 4A shows semiconductor die 32 with EM emission source
55. Solder balls 76 are suitably sized and connect semiconductor
die 32 to the illustrated portion of interposer 74. The portion of
interposer 74 illustrated schematically over semiconductor die 32
is coupled to semiconductor die 32 such that the illustrated
portion of interposer 74 is positioned over EM emission source 55.
Capacitor 80 is formed within the illustrated portion of interposer
74 and disposed over EM emission source 55 when interposer 74 is
joined to semiconductor die 32. Capacitor 80 is a metal-oxide-metal
("MOM") capacitor and serves two purposes in some embodiments. In
some embodiments, capacitor 80 is a decoupling capacitor and also
provides shielding for electromagnetic emissions emanating from EM
emission source 55. In some embodiments, capacitor 80 mitigates
power line ripple or otherwise decouples one part from another part
of an electrical circuit formed in interposer 74. Capacitor 80
shields EM emission source 55 and prevents electromagnetic
interference in other components such as components of interposer
74 (not illustrated) that are formed in dashed portion 82 of
interposer 74 and in devices formed on other die or other
components coupled to interposer 74. Capacitor 80 includes two
electrodes 84 and 86. Each electrode 84 and 86 is a plurality of
interconnected parallel digits and the parallel digits of
respective plates 84 and 86 are disposed between one another in an
alternating fashion in one embodiment. In one embodiment,
electrodes 84 and 86 are formed of the same conductive layer of
interposer 74. In another embodiment, electrodes 84 and 86 are
formed of different conductive layers. According to another
embodiment in which electrodes 84 and 86 are formed of different
conductive layers, electrodes 84 and 86 are overlaid such that the
parallel digits of electrode 84 are perpendicular to the parallel
digits of electrode 86.
[0036] FIG. 4B shows semiconductor die 32 with EM emission source
55. Solder balls 76 are suitably sized and connect semiconductor
die 32 to the illustrated portion of interposer 74. The portion of
interposer 90 illustrated schematically over semiconductor die 32
is coupled to semiconductor die 32 such that the illustrated
portion of interposer 90 is positioned over EM emission source 55.
Capacitor 92 is formed within the illustrated portion of interposer
90 and disposed over EM emission source 55 when interposer 90 is
joined to semiconductor die 32. Capacitor 92 is a metal plate
capacitor and serves two purposes in some embodiments. In some
embodiments, capacitor 92 is a decoupling capacitor and also
provides shielding for electromagnetic emissions emanating from EM
emission source 55. In some embodiments, capacitor 92 mitigates
power line ripple or otherwise decouples other electronic
components of interposer 90. Capacitor 92 shields EM emission
source 55 and prevents electromagnetic interference in other
components such as components of interposer 90 (not illustrated)
that are formed in dashed portion 98 of interposer 90 and in
devices formed in other die or other components coupled to
interposer 90. Capacitor 92 includes two electrodes 94 and 96.
Electrodes 94 and 96 are formed of different conductive layers of
interposer 90.
[0037] FIG. 4C shows semiconductor die 32 with EM emission source
55. Solder balls 76 are suitably sized and connect semiconductor
die 32 to the illustrated portion of interposer 100. The portion of
interposer 100 illustrated schematically over semiconductor die 32
is coupled to semiconductor die 32 such that the illustrated
portion of interposer 100 is positioned over EM emission source 55
when interposer 100 is joined to semiconductor die 32. Capacitor
102 is formed within the illustrated portion of interposer 100 and
positioned over EM emission source 55. Capacitor 102 is a
metal-insulator-metal ("MIM") or metal-insulator-semiconductor
("MIS") capacitor and serves two purposes in some embodiments.
Various dielectrics are used for the capacitor dielectric. In some
embodiments, capacitor 102 is a decoupling capacitor for mitigating
power line ripple and also provides shielding for electromagnetic
emissions emanating from EM emission source 55. Capacitor 102
prevents electromagnetic interference in other components such as
components of interposer 100 (not illustrated) that are formed in
dashed portion 108 of interposer 100. Capacitor 102 also prevents
electromagnetic interference in other components such as other
semiconductor die joined to interposer 100. Capacitor 102 includes
two electrodes 106 and 104. Electrodes 104 and 106 are formed of
different layers of conductive layers 38 of interposer 100. In some
embodiments, one of the conductive layers 38 is a semiconductor
layer such as polysilicon and serves as capacitor plate 104 or
106.
[0038] FIGS. 5A and 5B illustrate another interposer embodiment of
the disclosure. FIG. 5A is a cross-sectional view of interposer
120. Interposer 120 is formed of various suitable substrate
materials and includes conductive layers 122 separated by
dielectric material 124. In one embodiment, various suitable metal
materials such as aluminum, copper or their alloys, are used for
conductive layers 122.
[0039] Conductive layers 122 are formed of suitable semiconductor
material such as polysilicon, in other exemplary embodiments, but
are collectively referred to hereinafter simply as conductive
layers 122. Conductive layers 122 are also designated "M1," "M2,"
"M3," and "M4". Interposer 120 is coupled to semiconductor die 126
and 128 by solder bumps 130. Solder bumps 132 couple interposer 120
to other components such as a package substrate or PCB (not shown).
Through-silicon vias ("TSVs") 136 extend completely through
interposer 120 in the illustrated embodiment. In one embodiment,
semiconductor die 126 is a GPS die that sends and receives RF
signals and semiconductor die 128 is a baseband die, but this is
intended to be exemplary only. A "Noise Source" is indicated on M1
conductive layer 122 in the illustrated embodiment indicating a
noisy electrical signal carried along at least one lead within M1
conductive layer 122. The "Noise Source" lead is coupled to any of
various sources of electrical noise such as may be contained in
semiconductor die 126 or 128. M4 conductive layer 122 is also
identified as "Signal Source" in the illustrated embodiment and
represents a signal carried along a lead formed from M4 conductive
layer 122 and which is desirably shielded from the electrical noise
of the "Noise Source" electrical lead of M1 conductive layer 122,
by a shield structure. The shield structure is formed of at least
M2 conductive layer 122 and M3 conductive layer 122 such as shown
in FIG. 5B. The designation of a lead within M1 conductive layer
122 as "Noise Source" and of a lead within M4 conductive layer 122
as "Signal Source" is exemplary only and in another embodiment, the
"Noise Source" is a lead within M4 conductive layer 122 and the
"Signal Source" is a lead in M1 conductive layer 122.
[0040] FIG. 5B shows shield 140 formed of portions of M2 conductive
layer 122 and portions of M3 conductive layer 122. In the plan view
of FIG. 5B, the shield is a continuous shield that extends
continuously from top to bottom of the drawing, and shields any
noise source above shield 140 from any signal source or other
component below shield 140. Either or all of conductive leads 146
that are formed of M1 conductive layer 122 may be a noise source
and the noise generated by the noise source is blocked from
interfering with a signal source or other components beneath shield
140. Portions of M2 conductive layer 122, which are disposed above
M3 conductive layer 122, are coupled to the portions of M3
conductive layer 122 by means of vias, contacts or other connective
structures to provide a solid shield such that there is no
dielectric path through shield 140. The connective structures are
formed of suitable metal or semiconductor materials. An embodiment
showing such interconnections is shown in FIG. 6. Still referring
to FIG. 5B, shield 140 is formed of materials that absorb or block
electrical noise and therefore any electrical noise from a
conductive lead 146 carrying a noisy signal would have to go
completely around shield 140 to affect a signal being disposed
below shield 140, e.g. the Signal Source shown in FIG. 5A.
[0041] FIG. 6 is cross-sectional view showing an embodiment of an
exemplary shield and illustrates the solid, continuous nature of
shield 162, such qualities also applicable to shield 140 shown in
FIG. 5B. Shield 162 is included with an interposer according to an
embodiment of the disclosure. More particularly, shield 162 is
included within dielectric layers formed over a body substrate of
an interposer according to an embodiment of the disclosure.
[0042] FIG. 6 is a cross-sectional view taken along a direction
transverse to the longitudinal direction of interposer, i.e.,
transverse to the signal carrying direction of the interposer, and
shows conductive leads 150 which are formed of an upper conductive
layer in one embodiment and extend in and out of the plane of the
drawing page. Conductive leads 152 are formed from a subjacent
conductive layer. In one embodiment, one or all of conductive leads
150 carries a noisy signal and conductive leads 152 carry another
signal desired to be shielded from electrical noise and EM
emissions such as may emanate from one or more of conductive leads
150. In another embodiment, the roles of conductive leads 150 and
152 are reversed. Blocking segments 154 and 156 are each formed
from a further layer which may be a conductive layer as described
above in various embodiments. Blocking segments 154 are coupled to
blocking segments 156 by contact structures 158. Contact structures
158 are formed of conductive materials such as metals or
semiconductor material in various embodiments.
[0043] The lateral dimension 160 of shield 162 formed of blocking
segments 154, blocking segments 156 and contact structures 158 is
chosen to be sufficiently large such that any noise in the form of
EM emission radiation or other electrical noise would have to
travel a substantial distance from conductive lead 150 and around
shield 162 in order to reach conductive lead 152 and would
advantageously become essentially dissipated before reaching
conductive lead 152. Shield 162 prevents EM emissions such as EM
emissions 164 from travelling through shield 162. In one
embodiment, lateral dimension 160 extends substantially completely
across the interposer. In some embodiments, lateral dimension 160
represents at least a majority of the width of the interposer that
contains shield 162. In one embodiment, lateral dimension 160 is a
dimension at least about fifteen to twenty times as great as a
width of conductive lead 150. These are exemplary only. It should
be understood that lateral dimension 160 of shield 162 is chosen in
conjunction with the location of the noisy signals and the signal
sources or other components desired to be shielded from noise, such
that any EM emissions or other noise from the noisy source would
have to travel completely around shield 162 and be substantially
dissipated by the time it reaches the signal source of interest. In
some embodiments, either or both of blocking segments 154 and 156
are grounded. In one embodiment, lower conductive leads 152 are
formed of a lower conductive layer, blocking segments 156 and 154
are formed of intermediate conductive layers, and conductive leads
150 are formed of an upper conductive layer.
[0044] FIGS. 7A and 7B show another embodiment of a shield
contained within an interposer according to another embodiment of
the disclosure. FIG. 7A is a top view of shield 170 that is
disposed beneath conductive leads 146. Conductive leads 146 may be
formed of an upper conductive layer such as M1 conductive layer 122
shown in FIG. 5A. In one embodiment, one or all of conductive leads
146 carries a noisy signal and one or more further conductive leads
disposed beneath shield 170 carries another signal and is desired
to be shielded from electrical noise and EM emissions. Shield 170
is formed of segments of conductive material coupled together. FIG.
7B shows two exemplary checkerboard patterns. Upper checkerboard
pattern 174 is formed of a conductive or semiconductor layer and
lower checkerboard pattern 176 is also formed of a conductive or
semiconductor layer. In one embodiment, upper checkerboard pattern
174 is formed of segments of M2 conductive layer 122 shown in FIG.
5A, lower checkerboard pattern 176 is formed of segments of M3
conductive layer 122 shown in FIG. 5A and conductive leads 146 are
formed of portions of M1 conductive layer 122 shown in FIG. 5A.
Upper and lower checkerboard patterns 174 and 176 are overlaid to
combine to form shield 170 shown in FIG. 7A. When viewed from
above, shield 170 is a continuous member formed of a solid
uninterrupted pattern formed by the overlaid and interconnected
checkerboard patterns. The segments of upper checkerboard pattern
174 are coupled to the segments of lower checkerboard pattern 176
by a series of contacts or vias, not visible in FIG. 7A. Shield 170
is therefore a substantially solid member that prevents noise from
a noise source disposed above shield 170 from affecting a signal
source disposed below shield 170. Either or all of conductive leads
146 may be a signal source or a noise source. With upper
checkerboard pattern 174 coupled to lower checkerboard pattern 176
to form a solid shield 170, there are no dielectric openings that
extend through shield 170.
[0045] FIG. 8 is a cross-sectional view taken along a direction
transverse to the longitudinal direction of an interposer, i.e.,
transverse to the signal carrying direction of the interposer, and
shows conductive leads 182 which are formed of an upper conductive
layer in one embodiment. Shield 180 extends along the longitudinal
direction of conductive leads 182 and 184 which extend into and out
of the plane of the drawing page. Shield 180 is positioned between
upper conductive leads 182 and lower conductive leads 184. Shield
180 is formed of segments 186 of an upper layer, segments 188 of a
lower layer and contact structures 190 which join upper segments
186 to lower segments 188. Shield 180 is sized to include a
dimension suitably large such that any EM emissions or other
electrical noise from one of the conductive leads of 182, e.g. EM
emissions 192 must travel a significantly long distance and be
substantially dissipated before reaching conductive leads 184, or
vice versa.
[0046] FIG. 9 illustrates another embodiment of a shield according
to the disclosure. FIG. 9 is a top view that shows shield 194
including blocking portions 196 and 198. Blocking portions 196 and
198 are joined together such that shield 194 is a solid structure.
Conductive leads 200 are disposed above shield 194 and further
conductive leads disposed beneath shield 194 are designated by
dashed lines 204. In one embodiment, one or all of conductive leads
200, which may be disposed above shield 194, carries a noisy signal
and further conductive leads disposed beneath shield 194 carry
another signal and are desired to be shielded from electrical noise
and EM emissions such as from one or more of conductive leads 200.
Shield 194 is sized to prevent EM emissions from conductive leads
200 from interfering with signals carried in conductive leads 204.
In one embodiment, blocking portions 198 and 200 are formed of two
intermediate conductive or semiconductor layers joined together by
contacts and/ or vias. In one embodiment, shield 194 may be at
least fifteen to twenty times as wide as width 210 of conductive
leads 200,
[0047] FIG. 10 shows another embodiment of shields formed within an
interposer according to the disclosure. More particularly, shields
222 are included within dielectric layers formed over a substrate
body of an interposer according to an embodiment of the disclosure.
FIG. 10 is a cross-sectional view taken along a direction
transverse to the longitudinal direction of an interposer, i.e.,
transverse to the signal carrying direction of the interposer, and
shows conductive leads 220. Shields 222 include upper segments
formed of upper layer 224 which is a conductive layer in various
embodiments, segments of intermediate layer 226, which is a
conductive material in various embodiments, and segments of lower
layer 228 which is a conductive layer in various embodiments. As
previously defined, conductive layers that include upper layer 224,
intermediate layer 226 and lower layer 228 may be formed of
suitable metals or semiconductor materials in various exemplary
embodiments. The layers are coupled together by contact structures
230 and 232.
[0048] Shields 222 are formed within dielectric material 234, which
is also present between conductive leads 220 and shields 222, and
is disposed over a substrate body. Conductive leads 220 are signal
sources, with conductive leads 242 being a source of electrical
noise in one embodiment. In another embodiment, conductive leads
242 are signal sources, with conductive leads 220 being noise
sources. Shields 222 substantially surround respective conductive
leads 220 and shield conductive leads 220 from conductive leads 242
and vice versa. In one embodiment, layers 224, 226, 228 and 242 are
successive layers of metals, other conductive materials or
semiconductor materials disposed within a dielectric such as
dielectric 234 in an interposer. Either or all of conductive layers
224, 226 and 228 are coupled to ground in one embodiment and serve
as ground shields.
[0049] The structures shown in cross-sections in FIGS. 6, 8 and 10
are exemplary. FIG. 10 illustrates an embodiment in which
conductive layers form a shield that completely surrounds a
conductive lead such that no dielectric paths exist between the
surrounded conductive lead and any electrical noise such as EM
emissions that may be present outside the shield, or vice versa.
FIGS. 6 and 8 illustrate embodiments with solid continuous shields
that include no dielectric openings therethrough. The various
shield embodiments of the disclosure utilize various numbers of
layers of metal and semiconductor materials. Each of these
arrangements is exemplary and various other embodiments include
arrangements that combine features of the exemplary shields
illustrated, e.g. a surrounding shield such as shield 222 in FIG.
10 may be used in combination with a wide shield such as shield 180
of FIG. 8.
[0050] According to one embodiment, an interposer for connecting a
semiconductor die to a printed circuit board is provided. The
interposer includes a body having opposed first and second
surfaces. A facing surface of the semiconductor die is joined to
the first surface of the interposer by at least a strip of multiple
rows of solder balls that are disposed on, and extend along, the
facing surface on outer portions of the semiconductor die.
[0051] According to another embodiment, a semiconductor package
includes a printed circuit board; a semiconductor die; and an
interposer interposed between the printed circuit board and the
semiconductor die, the interposer having first and second opposed
surfaces. The first surface is coupled to the printed circuit
board. A facing surface of the semiconductor die is joined to the
second surface of the interposer by at least a strip of parallel
rows of solder balls that extend along the facing surface on outer
portions of the semiconductor die.
[0052] According to another embodiment, an interposer for
connecting a semiconductor die to a printed circuit board is
provided. The interposer includes a body having opposed first and
second surfaces and a plurality of conductive layers therein. The
semiconductor die is joined to the first surface of the interposer
at a first location, the first location comprising a geometric
portion of the interposer that faces the semiconductor die. The
interposer includes an internal electromagnetic shield in the first
location, the internal electromagnetic shield being a capacitive
device formed of the conductive layers.
[0053] According to another embodiment, an interposer for
connecting a semiconductor die to a printed circuit board is
provided. The interposer includes a body having opposed first and
second surfaces; a plurality of conductive layers within the
interposer, wherein one of the conductive layers includes a first
metal lead and a further of the conductive layers includes a second
metal lead and the first metal lead is shielded from the second
metal lead by a shield including at least one interposed conductive
layer of the conductive layers. The first metal lead extends along
a longitudinal direction of the interposer and the shield extends
continuously laterally across at least a majority of a transverse
direction of the interposer between the first and second metal
leads. The conductive layers are formed of metal materials or
semiconductor materials.
[0054] According to another embodiment, an interposer for
connecting a semiconductor die to a printed circuit board is
provided. The interposer includes a substrate body; a plurality of
conductive layers disposed in a dielectric material on the
substrate body; a first metal lead; and a shield surrounding the
first metal lead, the shield including at least one of
semiconductor materials, portions of the conductive layers and
further metal portions.
[0055] The preceding merely illustrates the principles of the
disclosure. It will thus be appreciated that those of ordinary
skill in the art will be able to devise various arrangements which,
although not explicitly described or shown herein, embody the
principles of the disclosure and are included within its spirit and
scope. Furthermore, all examples and conditional language recited
herein are principally intended expressly to be only for
pedagogical purposes and to aid the reader in understanding the
principles of the disclosure and the concepts contributed by the
inventors to furthering the art, and are to be construed as being
without limitation to such specifically recited examples and
conditions. Moreover, all statements herein reciting principles,
aspects, and embodiments of the disclosure, as well as specific
examples thereof, are intended to encompass both structural and
functional equivalents thereof. Additionally, it is intended that
such equivalents include both currently known equivalents and
equivalents developed in the future, i.e., any elements developed
that perform the same function, regardless of structure.
[0056] This description of the exemplary embodiments is intended to
be read in connection with the figures of the accompanying drawing,
which are to be considered part of the entire written description.
In the description, relative terms such as "lower," "upper,"
"horizontal," "vertical," "above," "below," "up," "down," "top" and
"bottom" as well as derivatives thereof (e.g., "horizontally,"
"downwardly," "upwardly," etc.) should be construed to refer to the
orientation as then described or as shown in the drawing under
discussion. These relative terms are for convenience of description
and do not require that the apparatus be constructed or operated in
a particular orientation. Terms concerning attachments, coupling
and the like, such as "connected" and "interconnected," refer to a
relationship wherein structures are secured or attached to one
another either directly or indirectly through intervening
structures, as well as both movable or rigid attachments or
relationships, unless expressly described otherwise.
[0057] Although the disclosure has been described in terms of
exemplary embodiments, it is not limited thereto. Rather, the
appended claims should be construed broadly, to include other
variants and embodiments of the disclosure, which may be made by
those of ordinary skill in the art without departing from the scope
and range of equivalents of the disclosure.
* * * * *