U.S. patent application number 13/179948 was filed with the patent office on 2013-01-17 for structure and method for forming a light detecting diode and a light emitting diode on a silicon-on-insulator wafer backside.
This patent application is currently assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION. The applicant listed for this patent is Benjamin A. Fox, Nathaniel J. Gibbs, Andrew B. Maki, David M. Onsongo, Trevor J. Timpane. Invention is credited to Benjamin A. Fox, Nathaniel J. Gibbs, Andrew B. Maki, David M. Onsongo, Trevor J. Timpane.
Application Number | 20130015502 13/179948 |
Document ID | / |
Family ID | 47470925 |
Filed Date | 2013-01-17 |
United States Patent
Application |
20130015502 |
Kind Code |
A1 |
Fox; Benjamin A. ; et
al. |
January 17, 2013 |
STRUCTURE AND METHOD FOR FORMING A LIGHT DETECTING DIODE AND A
LIGHT EMITTING DIODE ON A SILICON-ON-INSULATOR WAFER BACKSIDE
Abstract
A structure and method for fabricating a light emitting diode
and a light detecting diode on a silicon-on-insulator (SOI) wafer
is provided. Specifically, the structure and method involves
forming a light emitting diode and light detecting diode on the SOI
wafer's backside and utilizing a deep trench formed in the wafer as
an alignment marker. The alignment marker can be detected by x-ray
diffraction, reflectivity, or diffraction grating techniques.
Moreover, the alignment marker can be utilized to pattern openings
and perform ion implantation to create p-n junctions for the light
emitting diode and light detecting diode. By utilizing the SOI
wafer's backside, the structure and method increases the number of
light emitting diodes and light detecting diodes that can be formed
on a SOI wafer, enables an increase in overall device density for
an integrated circuit, and reduces attenuation of light signals
being emitted and detected by the diodes.
Inventors: |
Fox; Benjamin A.;
(Rochester, MN) ; Gibbs; Nathaniel J.; (Iowa City,
IA) ; Maki; Andrew B.; (Rochester, MN) ;
Onsongo; David M.; (Austin, TX) ; Timpane; Trevor
J.; (Rochester, MN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Fox; Benjamin A.
Gibbs; Nathaniel J.
Maki; Andrew B.
Onsongo; David M.
Timpane; Trevor J. |
Rochester
Iowa City
Rochester
Austin
Rochester |
MN
IA
MN
TX
MN |
US
US
US
US
US |
|
|
Assignee: |
INTERNATIONAL BUSINESS MACHINES
CORPORATION
Armonk
NY
|
Family ID: |
47470925 |
Appl. No.: |
13/179948 |
Filed: |
July 11, 2011 |
Current U.S.
Class: |
257/200 ;
257/E21.561; 257/E29.085; 257/E29.091; 438/787 |
Current CPC
Class: |
H01L 33/382 20130101;
H01L 27/1463 20130101; H01L 27/0694 20130101; H01L 27/15 20130101;
H01L 27/1461 20130101; H01L 31/125 20130101; H01L 27/1464 20130101;
H01L 27/1203 20130101 |
Class at
Publication: |
257/200 ;
438/787; 257/E29.085; 257/E29.091; 257/E21.561 |
International
Class: |
H01L 29/165 20060101
H01L029/165; H01L 21/762 20060101 H01L021/762 |
Claims
1. A diode structure, comprising: a silicon-on-insulator wafer
joined to a dielectric layer; an alignment marker formed in the
silicon-on-insulator wafer; a back-end-of-line metal wiring and
dielectric level formed on the silicon-on-insulator wafer; an
alternating n-type and p-type doped region formed on a backside of
the silicon-on-insulator wafer, wherein the alternating n-type and
p-type doped region includes an n-well cathode region, a first
n-well ohmic contact region, a second n-well ohmic contact region,
and an anode region; a group of through-silicon vias that extend
through the back-end-of-line metal wiring and dielectric level, the
silicon-on-insulator wafer, and the dielectric layer; and a group
of contacts that connect the group of through-silicon vias to the
alternating n-type and p-type doped region.
2. The diode structure of claim 1, wherein: the
silicon-on-insulator wafer comprises a first semiconductor layer, a
buried insulator layer formed on the first semiconductor layer, a
second semiconductor layer formed on the buried insulator layer;
and the back-end-of-line metal wiring and dielectric level is
formed on the second semiconductor layer.
3. The diode structure of claim 2, wherein the first semiconductor
layer and second semiconductor layer comprises germanium (Ge),
silicon-carbon (Si.sub.1-xC.sub.x), other group IV materials,
gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), indium
arsenide (InAs), or other group III/V materials.
4. The diode structure of claim 2, wherein: the buried insulator
layer comprises silicon dioxide (SiO.sub.2); the buried insulator
layer is formed by ion implantation of oxygen ions into the first
semiconductor layer; and the buried insulator layer has a thickness
within the range of about 300 nm to 400 nm
5. The diode structure of claim 1, wherein: the alignment mark
comprises an opening; an alignment mark dielectric layer is
deposited on and adjacent to the opening; and a conductive material
is deposited on and adjacent to the alignment mark dielectric
layer.
6. The diode structure of claim 5, wherein: the alignment mark
dielectric layer includes nitride, oxide, or a combination thereof;
and the conductive material includes polysilicon.
7. The diode structure of claim 1, wherein: the n-well cathode
region, the first n-well ohmic contact region, and the second
n-well ohmic contact region comprise n-type dopants that include,
but are not limited to, phosphorus, arsenic, or antimony; and the
anode region comprises p-type dopants that include, but are not
limited to, boron, boron difluoride (BF2) or indium.
8. The diode structure of claim 7, wherein: the n-well cathode
region has a dopant concentration within the range of about
1.times.10.sup.16 atoms per cm.sup.3 to about 1.times.10.sup.18
atoms per cm.sup.3; the first n-well ohmic contact region and the
second n-well ohmic contact region each have a dopant concentration
within the range of about 5.times.10.sup.19 atoms per cm.sup.3 to
about 2.times.10.sup.20 atoms per cm.sup.3; and the anode region
has a dopant concentration within the range of about
5.times.10.sup.19 atoms per cm.sup.3 to about 2.times.10.sup.20
atoms per cm.sup.3.
9. The diode structure of claim 1, wherein: the group of
through-silicon vias comprises a first through-silicon via, a
second through-silicon via, and a third through-silicon via; the
first through-silicon via, the second through-silicon via, and the
third through-silicon via comprise a diffusion barrier layer and a
conductive material; and the group of contacts comprises a first
contact, a second contact, and a third contact.
10. The diode structure of claim 9, wherein: the first contact
connects the first through-silicon via to the first n-well ohmic
contact region, through a patterned opening formed in the
dielectric layer selective to the first n-well ohmic contact
region; the second contact connects the second through-silicon via
to the anode region, through a pair of patterned openings formed in
the dielectric layer selective to the anode region; and the third
contact connects the third through-silicon via to the second n-well
ohmic contact region, through a patterned opening formed in the
dielectric layer selective to the second n-well ohmic contact
region.
11. The diode structure of claim 9, wherein: the diffusion barrier
layer comprises tantalum (Ta), tantalum nitride (TaN), ruthenium
(Ru), titanium (Ti), or titanium nitride (TiN) deposited utilizing
a technique that includes CVD, physical vapor deposition (PVD), or
atomic layer deposition (ALD); and the conductive material
comprises copper or aluminum.
12. A method of forming a diode structure, the method comprising:
forming a silicon-on-insulator wafer joined to a dielectric layer;
forming an alignment marker formed in the silicon-on-insulator
wafer; forming a back-end-of-line metal wiring and dielectric level
on the silicon-on-insulator wafer; forming an alternating n-type
and p-type doped region on a backside of the silicon-on-insulator
wafer, wherein the alternating n-type and p-type doped region
includes an n-well cathode region, a first n-well ohmic contact
region, a second n-well ohmic contact region, and an anode region;
forming a group of through-silicon vias that extend through the
back-end-of-line metal wiring and dielectric level, the
silicon-on-insulator wafer, and the dielectric layer; and forming a
group of contacts that connect the group of through-silicon vias to
the alternating n-type and p-type doped region.
13. The method of claim 12, wherein: the silicon-on-insulator wafer
comprises a first semiconductor layer, a buried insulator layer
formed on the first semiconductor layer, a second semiconductor
layer formed on the buried insulator layer; and the
back-end-of-line metal wiring and dielectric level is formed on the
second semiconductor layer.
14. The method of claim 13, wherein the first semiconductor layer
and second semiconductor layer comprises germanium (Ge),
silicon-carbon (Si.sub.1-xC.sub.x), other group IV materials,
gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), indium
arsenide (InAs), or other group III/V materials.
15. The method of claim 13, wherein: the buried insulator layer
comprises silicon dioxide (SiO.sub.2); the buried insulator layer
is formed by ion implantation of oxygen ions into the first
semiconductor layer; and the buried insulator layer has a thickness
within the range of about 300 nm to 400 nm
16. The method of claim 12, wherein: the alignment mark comprises
an opening; an alignment mark dielectric layer deposited on and
adjacent to the opening; and a conductive material deposited on and
adjacent to the alignment mark dielectric layer.
17. The method of claim 16, wherein: the alignment mark dielectric
layer includes nitride, oxide, or a combination thereof; and the
conductive material includes polysilicon.
18. The method of claim 12, wherein: the n-well cathode region, the
first n-well ohmic contact region, and the second n-well ohmic
contact region comprise n-type dopants that include, but are not
limited to, phosphorus, arsenic, or antimony; and the anode region
comprises p-type dopants that include, but are not limited to,
boron, boron difluoride (BF2) or indium.
19. The method of claim 18, wherein: the n-well cathode region has
a dopant concentration within the range of about 1.times.10.sup.16
atoms per cm.sup.3 to about 1.times.10.sup.18 atoms per cm.sup.3;
the first n-well ohmic contact region and the second n-well ohmic
contact region each have a dopant concentration within the range of
about 5.times.10.sup.19 atoms per cm.sup.3 to about
2.times.10.sup.20 atoms per cm.sup.3; and the anode region has a
dopant concentration within the range of about 5.times.10.sup.19
atoms per cm.sup.3 to about 2.times.10.sup.20 atoms per
cm.sup.3.
20. The method of claim 12, wherein: the group of through-silicon
vias comprises a first through-silicon via, a second
through-silicon via, and a third through-silicon via; the first
through-silicon via, the second through-silicon via, and the third
through-silicon via comprise a diffusion barrier layer and a
conductive material; and the group of contacts comprises a first
contact, a second contact, and a third contact.
21. The method of claim 20, wherein: the first contact connects the
first through-silicon via to the first n-well ohmic contact region,
through a patterned opening formed in the dielectric layer
selective to the first n-well ohmic contact region; the second
contact connects the second through-silicon via to the anode
region, through a pair of patterned openings formed in the
dielectric layer selective to the anode region; and the third
contact connects the third through-silicon via to the second n-well
ohmic contact region, through a patterned opening formed in the
dielectric layer selective to the second n-well ohmic contact
region.
22. The method of claim 20, wherein: the diffusion barrier layer
comprises tantalum (Ta), tantalum nitride (TaN), ruthenium (Ru),
titanium (Ti), or titanium nitride (TiN) deposited utilizing a
technique that includes CVD, physical vapor deposition (PVD), or
atomic layer deposition (ALD); and the conductive material
comprises copper or aluminum.
Description
TECHNICAL FIELD
[0001] The present invention relates to light detecting diodes and
light emitting diodes, and particularly to a structure and method
for forming a light detecting diode and a light emitting diode on a
silicon-on-insulator wafer backside.
BACKGROUND
[0002] Integrated circuit inputs and outputs are provided through
controlled collapse chip connections (C4s). As integrated circuits
become smaller, increasing the number of C4s that can be placed on
the integrated circuits is becoming a challenge. The challenge
arises because the number of inputs and outputs (port density)
desired for integrated circuits is increasing, but wafer surface
area that is available for forming the inputs and outputs is
decreasing. Increasing port density for integrated circuits can
increase the functionality provided by the integrated circuits.
[0003] One way to increase port density and provide additional high
speed capable inputs and outputs for an integrated circuit is by
forming light detecting diodes (i.e., photo-diodes) and light
emitting diodes on a wafer. Traditionally, light detecting diodes
and light emitting diodes, both also referred to as optical ports,
are formed on a front-side of the wafer. In addition,
back-end-of-line (BEOL) processing is performed to create BEOL
metal wiring and dielectric levels, and C4 pads on the front-side
of the wafer. The BEOL metal wiring and dielectric levels, and C4
pads integrate the light detecting diodes and the light emitting
diodes with other circuitry (i.e., other semiconductor devices) on
the front-side of the wafer. Although a semiconductor structure
having light detecting diodes and light emitting diodes on the
front-side of the wafer may provide a performance benefit over C4
pads, generally such a semiconductor structure does not completely
address the challenge of how to increase port density as
technological advancements continue to result in a decrease of
available wafer surface area.
[0004] Moreover, BEOL processing requires the BEOL metal wiring and
dielectric levels to be formed on top of the light detecting
diodes, light emitting diodes, and other semiconductor devices that
may be formed on the front-side of the wafer. The BEOL dielectric
isolates the BEOL metal wiring from certain areas of the wafer.
However, the BEOL dielectric can cause a decrease in performance of
the semiconductor devices formed on the wafer. Specifically, the
BEOL dielectric can cause attenuation of light signals being
emitted or detected by the diodes, and the more the BEOL metal
wiring the greater the attenuation of the light signals. The
attenuation of the light signals described above can decrease the
performance of light detecting and light emitting diodes.
Accordingly, the challenge of forming a semiconductor structure
having a light detecting diode and a light emitting diode that
increases port density for an integrated circuit, and reduces
attenuation of light signals being emitted and detected by the
diodes respectively, continues to persist. Reducing the attenuation
can enhance the performance of the diodes and consequently
integrated circuits that utilize the diodes.
SUMMARY
[0005] The present invention relates to a structure and method for
forming a silicon-on-insulator wafer having a backside, wherein a
light detecting diode and a light emitting diode are formed on the
backside to increase port density and reduce attenuation of light
signals that are emitted and detected by the diodes,
respectively.
[0006] In one aspect, embodiments of the invention provide a diode
structure with a silicon-on-insulator wafer, and a method for
forming the diode structure with the silicon-on-insulator wafer.
The silicon-on-insulator wafer is joined to a dielectric layer. An
alignment marker is formed in the silicon-on-insulator wafer. A
back-end-of-line metal wiring and dielectric level is formed on the
silicon-on-insulator wafer. An alternating n-type and p-type doped
region is formed on a backside of the silicon-on-insulator wafer,
wherein the alternating n-type and p-type doped region includes an
n-well cathode region, a first n-well ohmic contact region, a
second n-well ohmic contact region, and an anode region. A group of
through-silicon vias is formed that extend through the
back-end-of-line metal wiring and dielectric level, the
silicon-on-insulator wafer, and the dielectric layer. A group of
contacts is formed that connect the group of through-silicon vias
to the alternating n-type and p-type doped region.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
[0007] The subject matter which is regarded as an embodiment of the
present invention is particularly pointed out and distinctly
claimed in the claims at the conclusion of the specification. One
manner in which recited features of an embodiment of the present
invention can be understood is by reference to the following
detailed description of embodiments, taken in conjunction with the
accompanying drawings in which:
[0008] FIGS. 1-7 are cross-sectional views of a
silicon-on-insulator wafer having a front-side and a backside,
which illustrate process steps for fabricating a light detecting
diode and a light emitting diode on the backside according to one
embodiment of the present invention.
[0009] The drawings are not necessarily to scale. The drawings,
some of which are merely pictorial and schematic representations,
are not intended to portray specific parameters of the invention.
The drawings are intended to depict only typical embodiments of the
invention, and therefore should not be considered as limiting the
scope of the invention. In the drawings, like numbering represents
like elements.
DETAILED DESCRIPTION
[0010] Exemplary embodiments now will be described more fully
herein with reference to the accompanying drawings. This disclosure
may, however, be embodied in many different forms and should not be
construed as limited to the exemplary embodiments set forth herein.
Rather, these exemplary embodiments are provided so that this
disclosure will be thorough and complete and will fully convey the
scope of this disclosure to those skilled in the art. In the
description, details of well-known features and techniques may be
omitted to avoid unnecessarily obscuring the presented
embodiments.
[0011] References in the specification to "one embodiment", "an
embodiment", "an example embodiment", "an alternative embodiment",
"another embodiment", etc., indicate that the embodiment described
may include a particular feature, element, structure, or
characteristic, but every embodiment may not necessarily include
the particular feature, element, structure, or characteristic.
Moreover, such phrases are not necessarily referring to the same
embodiment.
[0012] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
this disclosure. As used herein, the singular forms "a", "an", and
"the" are intended to include the plural forms as well, unless the
context clearly indicates otherwise. Furthermore, the use of the
terms "a", "an", etc., do not denote a limitation of quantity, but
rather denote the presence of at least one of the referenced items.
It will be further understood that the terms "comprises" and/or
"comprising", or "includes" and/or "including", when used in this
specification, specify the presence of stated features, regions,
integers, steps, operations, elements, and/or components, but do
not preclude the presence or addition of one or more other
features, regions, integers, steps, operations, elements,
components, and/or groups thereof.
[0013] In addition, it will be understood that when an element as a
layer, region, dielectric, or substrate is referred to as being
"on" or "over", "disposed on", "disposed over", "deposited on", or
"deposited over" another element, it can be directly on the other
element or intervening elements may also be present. In contrast,
when an element is referred to as being "directly on", "directly
over", or "disposed proximately to" another element, there are no
intervening elements present. Furthermore, it will be understood
that when an element as a layer region, dielectric, or substrate is
referred to as being "adjacent to" or "disposed adjacent to"
another element, it can be directly adjacent to the other element
or intervening elements may be present. In contrast, when an
element is referred to as being "directly adjacent to" another
element, there are no intervening elements present. Moreover, it
will be understood that when an element as a layer, region,
dielectric, or substrate is referred to as being "on and adjacent
to" or "disposed on and adjacent to" another element, it can be
directly on and adjacent to the other element or intervening
elements may be present. In contrast, when an element is referred
to as being "directly on and adjacent to" another element, there
are no intervening elements present. Lastly, it will also be
understood that when an element is referred to as being
"connected", "coupled", "joined", or "proximate" to another
element, it can be directly connected, directly coupled, directly
joined, or directly proximate to the other element, or intervening
elements may be present. In contrast, when an element is referred
to as being "directly connected", "directly coupled", "directly
joined", or "directly proximate" to another element, there are no
intervening elements present.
[0014] Embodiments of the present invention provide a
silicon-on-insulator (SOI) wafer having a backside, wherein a light
detecting diode and a light emitting diode are formed on the
backside to increase port density and reduce attenuation of light
signals that are emitted and detected by the diodes, respectively.
Reducing the attenuation can enhance the performance of the diodes,
and consequently integrated circuits that utilize the diodes.
[0015] FIG. 1 illustrates a cross-sectional view of SOI wafer 100.
SOI wafer 100, having a front-side 105 and a backside 107, includes
a first semiconductor layer 101, a buried insulator layer 102
formed on the first semiconductor layer, and a second semiconductor
layer 103 formed on the buried insulator layer. First semiconductor
layer 101 and second semiconductor layer 103 are substrates that
can include silicon (e.g., single crystal silicon), but are not
limited to only silicon based materials. For example, first
semiconductor layer 101 and second semiconductor layer 103 may
include germanium (Ge), silicon-carbon (Si.sub.1-xC.sub.x), or
other group IV materials. Alternatively, first semiconductor layer
101 may include gallium arsenide (GaAs), aluminum gallium arsenide
(AlGaAs), indium arsenide (InAs), or other group III/V materials.
In addition, buried insulator layer 102 includes silicon dioxide
(SiO.sub.2), and the buried insulator layer can be formed in
several ways not limited to: ion implantation of oxygen ions into
first semiconductor layer 101, followed by a high temperature
anneal, this process is commonly referred to as SIMOX (separation
by oxygen implantation); bonding oxidized silicon with second
semiconductor layer 103 followed by controlled thinning; or growing
the second semiconductor layer directly on the insulator. Moreover,
buried insulator layer 102 can have a thickness within the range of
about 300 nm to 400 nm
[0016] FIG. 2 illustrates a cross-sectional view of SOI wafer 100
with dielectric layer 104 joined to the SOI wafer. Specifically,
dielectric layer 104 can be either deposited or thermally grown
proximate to first semiconductor layer 101. Low to medium
temperature (ranging from about 400.degree. C. to about 650.degree.
C.) deposition can be performed utilizing a chemical vapor
deposition (CVD) technique, which is preferable for use in a
semiconductor fabrication process where there is thermal budget
sensitivity. Thermal budget sensitivity refers to a maximum allowed
temperature the wafer can be exposed to due to prior process steps.
However, where thermal budget is not a concern, thermal growth can
be performed at higher temperatures (ranging from about 900.degree.
C. to about 1050.degree. C.) in an appropriate O.sub.2, N.sub.2,
H.sub.2 ambient. Thus, performing either CVD or thermal growth
results in first semiconductor layer 101 being on dielectric layer
104. Dielectric layer 104 is primarily utilized to prevent defects
from forming or adhering to first semiconductor layer 101, and
provide insulation for the devices formed in subsequent process
steps.
[0017] Moreover, dielectric layer 104 may include nitride, oxide,
or a combination thereof. Nitride is typically utilized to mitigate
the diffusion of conductive material (e.g., metal atoms) into the
substrates of first semiconductor layer 101 and second
semiconductor layer 103. Oxide is typically utilized for adhesion,
stress balancing, and as a chemical mechanical planarization (CMP)
stop. Shallow trench isolation (STI) openings 106 are formed
through second semiconductor layer 103 utilizing reactive ion
etching (RIE), selective to buried insulator layer 102.
Semiconductor devices can be formed on second semiconductor layer
103, and STI openings 106 can be filled with dielectric material to
electrically isolate the semiconductor devices from each other.
Utilizing STI openings 106, filled with dielectric material, can
mitigate unintended short circuiting, and minimize degradation of
electrical characteristics of the semiconductor devices formed on
second semiconductor layer 103.
[0018] FIG. 3 illustrates a cross-sectional view of SOI wafer 100
having an alignment mark 108 formed through second semiconductor
layer 103, buried insulator layer 102, and first semiconductor
layer 101. Alignment mark 108 may be, but is not limited to, a deep
trench that is filled with a dielectric layer and a conductive
material. Specifically, to form alignment mark 108 a first
photoresist and/or hardmask layer (not shown) may be deposited on
front-side 105. Subsequently, utilizing an etching/removal
technique (e.g., anisotropic RIE), an opening for alignment mark
108 can be formed to extend through the first photoresist and/or
hardmask layer, second semiconductor layer 103, buried insulator
layer 102, and first semiconductor layer 101. The opening can be
filled with an alignment mark dielectric layer 110 and conductive
material 111. Alignment mark dielectric layer 110 can be deposited
on and adjacent to the opening utilizing a CVD technique. Alignment
mark dielectric layer 110 can include an oxide such as silicon
dioxide (SiO.sub.2), a nitride such as silicon nitride (SiN), or a
combination thereof. Conductive material 111 can withstand the high
thermal budgets associated with conventional complementary
metal-oxide-semiconductor (CMOS) front-end-of-line (FEOL)
processing. For example, conductive material 111 can include
polysilicon, wherein the polysilicon may be deposited on an
adjacent to alignment mark dielectric layer 110 utilizing a CVD
technique. Moreover, alignment mark dielectric layer 110 can
electrically isolate conductive material 111 from portions of first
semiconductor layer 101 and second semiconductor layer 103, to
mitigate short circuiting between semiconductor devices formed on
front-side 105 and on backside 107, of SOI wafer 100.
[0019] Subsequently, CMP may be performed to remove the first
photoresist and/or hardmask layer, alignment mark dielectric layer
110 and conductive material 111 selective to second semiconductor
layer 103, wherein the alignment mark dielectric layer and the
conductive material remain only in the opening created for
alignment mark 108. Alignment mark 108 can have a length 112 that
ranges from about 450 um to about 600 um, and a width 113 that
ranges from about 15 um to about 20 um. Specifically, length 112 is
about 150 um to 200 um less than the thickness of SOI wafer 100,
and the minimum width 113 is constrained by the maximum aspect
ratio made possible by the etching/removal process employed to form
alignment mark 108. In addition, alignment mark 108 can be
subsequently utilized as a point of reference for forming a light
detecting and a light emitting diode on backside 107 of SOI wafer
100. Specifically, alignment mark 108 can be utilized to align
semiconductor devices formed on backside 107 with semiconductor
devices formed on front-side 105 of SOI wafer 100 to enable
connection between these devices on either side of the wafer.
[0020] FIG. 4 illustrates additional semiconductors structures for
forming a light detecting diode and a light emitting diode on
backside 107 of SOI wafer 100. Thus, to form the light detecting
diode and the light emitting diode on backside 107, a protective
film 114 is deposited on front-side 105 of SOI wafer 100.
Protective film 114 can include a spin-on photoresist or a nitride,
which may be deposited utilizing techniques that include CVD,
physical vapor deposition (PVD), or spin-on approaches. The
protective film 114 is required to protect front-side 105, of SOI
wafer 100, from defects or impurities while semiconductor devices
on backside 107 are being fabricated. Alignment mark 108, which
includes alignment mark dielectric layer 110 and conductive
material 111, can be utilized as a point of reference to align the
semiconductor devices formed on backside 107 with semiconductor
devices formed on front-side 105. In the present embodiment,
alignment mark 108 is utilized as a point of reference to determine
where on backside 107 to perform ion implantation to create an
alternating n-type and p-type doped region having p-n junctions for
the light detecting diode and the light emitting diode.
Specifically, an x-ray diffraction technique or a diffraction
grating measurement can be performed to allow for alignment mark
108 to be detected and utilized for aligning semiconductor devices
formed on SOI wafer 100.
[0021] To form the alternating n-type and p-type region for the
light detecting diode and the light emitting diode on backside 107,
a lightly doped n-well cathode region 200 is formed on backside 107
utilizing ion implantation of n-type dopants. The n-type dopants
utilized to form n-well cathode region 200 can include, but are not
limited to, phosphorus, arsenic, or antimony. However, in the
present embodiment n-well cathode region 200 is formed utilizing a
phosphorus implant having a dopant concentration engineered within
the range of about 1.times.10.sup.16 atoms per cm.sup.3 to about
1.times.10.sup.18 atoms per cm.sup.3. The length 208 of n-well
cathode region 200 may be about 30um and the width 210 may be about
1 um. In addition, n-well cathode region 200 may have a depth, into
the page, of about 30 um. In the present embodiment, n-well cathode
region 200 has a rectangular-like shape. However, in another
embodiment n-well cathode region 200 may have a circular-like shape
to maximize p-n junction perimeter (i.e., perimeter of anode region
204).
[0022] Furthermore, ion implantation is utilized to form heavily
doped first n-well ohmic contact region 202 and heavily doped
second n-well ohmic contact region 203, within n-well cathode
region 200. Specifically, n-well ohmic contact regions 202 and 203
are formed in n-well cathode region 200 on backside 107 utilizing
ion implantation of n-type dopants, wherein the n-type dopants can
include phosphorus, arsenic, or antimony. However, in the present
embodiment n-well ohmic contact regions 202 and 203 are formed
utilizing a phosphorus implant having a dopant concentration range
of about 5.times.10.sup.19 atoms per cm.sup.3 to about
2.times.10.sup.20 atoms per cm.sup.3. The lengths 212 and 216 of
n-well ohmic contact regions 202 and 203 respectively, may be about
0.5 um. Also, the widths 214 and 218 of n-well ohmic contact
regions 202 and 203 respectively, may be about 0.5 um. Furthermore,
n-well ohmic contact regions 202 and 203 may have a depth into the
page of about 28 um. Thus, ohmic contact regions 202 and 203 are
encompassed by n-well cathode region 200. In the present
embodiment, ohmic contact regions 202 and 203 are separate
rectangular bars placed within n-well cathode region 200. However,
in another embodiment wherein n-well cathode region 200 has a
circular-like shape, ohmic contact regions 202 and 203 would be
joined forming a circular-like ring shape within the n-well cathode
region.
[0023] In addition, a heavily doped p-type anode region 204 is
formed in n-well cathode region 200. Specifically, anode region 204
is interposed between n-well ohmic contact regions 202 and 203. The
spacing between anode region 204 and n-well ohmic contact regions
202 and 203 can be engineered/tuned for efficiency, however in the
present embodiment anode region 204 is spaced about 0.5 um from
each of the n-well ohmic contact regions. Ion implantation of
p-type dopants is utilized to form anode region 204, wherein the
p-type dopants can include, but are not limited to, boron, boron
difluoride (BF2) or indium. However, in the present embodiment a
BF2 implant is utilized having a dopant concentration range of
about 5.times.10.sup.19 atoms per cm.sup.3 to about
2.times.10.sup.20 atoms per cm.sup.3. Moreover, n-well cathode
region 200 separates anode region 204 from being directly connected
to n-well ohmic contact regions 202 and 203. The length 220 of
anode region 204 may be about 26 um, and the width 222 may be about
0.5 um having a depth into the page of about 28 um. Thus, anode
region 204 is encompassed by n-well cathode region 200.
Accordingly, the final alternating n-type and p-type doped region
includes n-well cathode region 200, n-well ohmic contact regions
202 and 203, and anode region 204. In the present embodiment, anode
region 204 is a rectangular bar placed within n-well cathode region
200. However, in another embodiment wherein n-well cathode region
200 has a circular-like shape, anode region 204 would also have a
circular-like shape within the n-well cathode region, and the anode
region would be surrounded by n-well ohmic contact regions 202 and
203 having a circular-like ring shape. After completing ion
implantation on backside 107, protective film 114 may be removed by
a wet etch or clean to clear the way for forming field effect
transistors on front-side 105 of SOI wafer 100.
[0024] FIG. 5 illustrates the formation of field effect transistors
(FETs) 120 on the front-side 105 of SOI wafer 100, but other
circuit components that include resistors and capacitors may be
formed on the front-side of the SOI wafer. After protective film
114 (shown in FIG. 4) has been removed, conventional or existing
SOI processing can be performed. Thus, standard SOI FETs are
formed, and STI openings 106 (shown in FIG. 4) are filled with a
dielectric material 116 that can include an oxide or a nitride. STI
openings 106 once filled are utilized to electrically isolate FETs
120 formed on front-side 105. Formation of FETs 120 and other
semiconductor devices and circuit components on front-side 105 is
part of FEOL processing. Subsequent to FEOL processing,
back-end-of-line (BEOL) processing is performed to create BEOL
metal wiring and dielectric levels 121 on front-side 105, and on
and adjacent to FETs 120. BEOL metal wiring and dielectric levels
121 can provide a reliable electrical connection/path between FETs
120 and other the semiconductor devices and circuit components
formed on front-side 105. Following BEOL processing on front-side
105, TSVs can be formed through BEOL metal wiring and dielectric
levels 121, SOI wafer 100, and dielectric layer 104.
[0025] FIG. 6 illustrates the formation of patterned openings 122
and 123. Patterned openings 122 are utilized to create a group of
TSVs, and patterned openings 123 clear the way for formation of a
group of contacts. The group of TSVs includes first TSV 140, second
TSV 141, and third TSV 142 (all shown in FIG. 7). The group of
contacts includes first contact 150, second contact 151, and third
contact 152 (all shown in FIG. 7). Contacts 150-152 electrically
connect TSVs 140-142 to portions of the alternating n-type and
p-type doped region on backside 107. TSVs 140-142 are interconnect
structures that can electrically connect semiconductor devices and
circuit components formed on front-side 105 to semiconductor
devices and circuit components formed on backside 107.
[0026] To create TSVs 140-142 patterned openings 122 are formed.
Moreover, to form patterned openings 122 a second photoresist
and/or hardmask layer (not shown) may be deposited on BEOL metal
wiring and dielectric levels 121. Subsequently, utilizing an
etching/removal technique, patterned openings 122 can be formed to
extend through the second photoresist and/or hardmask layer, BEOL
metal wiring and dielectric levels 121, second semiconductor layer
103, buried insulator layer 102, first semiconductor layer 101,
n-well cathode region 200, n-well ohmic contact regions 202 and 203
or anode region 204, and dielectric layer 104. In addition, a third
photoresist and/or hardmask layer (not shown) may be deposited
proximate to dielectric layer 104, and patterned openings 123 may
be formed through the third photoresist and/or hardmask layer and
the dielectric layer, selective to n-well ohmic contact regions 202
and 203 and anode region 204. The etching/removal technique
utilized to create patterned openings 122 and 123 can include, but
is not limited to, dry etching, plasma etching, or reactive ion
etching (RIE). In the present embodiment, patterned openings 122
and 123 are created by performing an anisotropic RIE of BEOL metal
wiring and dielectric levels 121, SOI wafer 100, and dielectric
layer 104. Patterned openings 122 and 123 are created to clear the
way for formation of TSVs 140-142 and contacts 150-152,
respectively. After patterned openings 122 and 123 are created, CMP
may be performed to remove the second photoresist and/or hardmask
layer and third photoresist and/or hardmask layer.
[0027] FIG. 7 illustrates the formation of contacts 150-152 and
TSVs 140-142, wherein the TSVs have a corresponding first end
143-145 respectively, and a corresponding second end 146-148
respectively. Patterned openings 122 (shown in FIG. 6) may be
filled with a dielectric material and a conductive material to
create the final structure of TSVs 140-142. Specifically, a
dielectric layer 131 having a thickness of about 10 nm is deposited
directly adjacent to sidewalls of patterned openings 122 utilizing
a CVD technique. Dielectric layer 131 can include an oxide such as
silicon dioxide, a nitride such as silicon nitride, or a
combination thereof. Thus, dielectric layer 131 can electrically
isolate conductive material subsequently formed inside patterned
openings 122, from portions of first semiconductor layer 101 and
second semiconductor layer 103 to mitigate short circuiting.
[0028] A diffusion bather layer 132 having a thickness of about 10
nm may be deposited directly adjacent to dielectric layer 131
utilizing a deposition technique that can include CVD, PVD, or
atomic layer deposition (ALD). Diffusion barrier layer 132 can
include tantalum (Ta), tantalum nitride (TaN), ruthenium (Ru),
titanium (Ti), titanium nitride (TiN), or other materials that are
capable of mitigating conductive material (e.g., copper or
aluminum) from diffusing into first semiconductor layer 101 and
second semiconductor layer 103. Diffusion of conductive material
into first semiconductor layer 101 and second semiconductor layer
103 can result in degradation of the electrical characteristics of
any semiconductor devices formed on the first semiconductor layer
and the second semiconductor layer.
[0029] After deposition of diffusion barrier layer 132, conductive
material 133 can be deposited inside patterned openings 122 and
adjacent to the diffusion barrier layer to fill the remaining
unfilled portions of the patterned openings. Conductive material
133 can include, but is not limited to, copper or aluminum.
Conductive material 133 can be deposited in patterned openings 122
utilizing deposition techniques that can include CVD, PVD, or
spin-on approaches. Afterwards, a CMP process can be performed
selective to BEOL metal wiring and dielectric levels 121, wherein
dielectric layer 131, diffusion barrier layer 132, and conductive
material 133 remain in patterned openings 122 after the CMP process
is completed. The filled patterned openings 122 are referred to as
TSVs. Thus, TSVs 140-142 can each have an aspect ratio that can
range from about 25:1 to 35:1. Aspect ratio refers to the ratio of
the depth of a TSV to the minimum lateral dimension of the TSV.
TSVs 140-142 with high aspect ratios can help increase device
density on SOI wafer 100, because such TSVs consume less surface
area of the SOI wafer.
[0030] Following the formation of TSVs 140-142, contacts 150-152
are formed to provide an electrical connection between
semiconductor devices fabricated on front-side 105 (e.g., FETs 120)
and semiconductors devices fabricated on backside 107 (e.g., a
light detecting diode and a light emitting diode). Specifically,
first contact 150 is joined to dielectric layer 104, second end 146
of TSV 140, and first n-well ohmic contact region 202. Second
contact 151 is joined to dielectric layer 104, second end 147 of
TSV 141, and anode region 204. Lastly, third contact 152 is joined
to dielectric layer 104, second end 148 of TSV 142, and second
n-well ohmic contact region 203. Conductive material utilized to
make contacts 150-152 can include, but is not limited to, copper or
aluminum. Moreover, suitable deposition techniques such as ALD or
CVD may be employed to form contacts 150-152.
[0031] After formation of contacts 150-152 the semiconductor device
created on backside 107 of SOI wafer 100 can be utilized either as
a light detecting diode or a light emitting diode, depending on the
voltage applied through TSVs 140-142. For light emission p-n
junctions 225 are reversed biased to the point of avalanche
breakdown. For example, a voltage of about 9V can be applied to
TSVs 140 and 142 that connect to n-well ohmic contact regions 202
and 203 respectively, and a voltage of about 0V can be applied
through TSV 141 that connects to anode region 204 causing the
semiconductor device formed on backside 107 to function as a light
emitting diode. If the semiconductor device formed on backside 107
functions as a light emitting diode then current will flow from
n-well cathode region 200 to anode region 204, which will result in
light being emitted from p-n junctions 225. Alternatively, a
voltage of about 5V (below avalanche breakdown) can be applied
through TSVs 140 and 142 that connect to n-well ohmic contact
regions 202 and 203 respectively, and a voltage of about 0V can be
applied through TSV 141 that connects to anode region 204 causing
the semiconductor device formed on backside 107 to function as a
light detecting diode. If the semiconductor device formed on
backside 107 functions as a light detecting diode then current will
flow from n-well cathode region 200 to anode region 204, which will
result in light being detected at p-n junctions 225. Performance of
light detection mode can be increased by having an intrinsically
doped region adjacent to anode region 204, wherein the
intrinsically doped region separates the anode region from n-well
cathode region 200.
[0032] Furthermore, those skilled in the art will note from the
above description, that presented herein is a novel structure and
method to form a light detecting diode and light emitting diode on
the backside of an SOI wafer. Forming a light detecting diode and a
light emitting diode on the backside of an SOI wafer can increase
port density for an integrated circuit, and reduce attenuation of
light signals being detected and emitted by the diodes
respectively. Lastly, the foregoing description of various aspects
of the invention has been presented for purposes of illustration
and description. It is not intended to be exhaustive or to limit
the invention to the precise form disclosed and, obviously, many
modifications and variations are possible. Such modifications and
variations that may be apparent to a person skilled in the art are
intended to be included within the scope of the invention as
defined by the accompanying claims.
* * * * *