U.S. patent application number 13/162873 was filed with the patent office on 2012-12-20 for defect free deep trench method for semiconductor chip.
Invention is credited to Kun-Yi Liu.
Application Number | 20120322259 13/162873 |
Document ID | / |
Family ID | 47354003 |
Filed Date | 2012-12-20 |
United States Patent
Application |
20120322259 |
Kind Code |
A1 |
Liu; Kun-Yi |
December 20, 2012 |
DEFECT FREE DEEP TRENCH METHOD FOR SEMICONDUCTOR CHIP
Abstract
A method for forming large substantially defect-free void areas
on a semiconductor integrated circuit chip includes processing the
chip through the passivation level processing operations then
forming one or more openings in a designated blank area of the
integrated circuit chip in a separate dedicated etching operation.
The one or more openings may constitute 5-10% or more of the total
area of the semiconductor chip. The void areas are deep trench
openings that extend through the passivation layer and through all
of the other material layers in the blank area exposing the
substrate surface in one embodiment and through all material layers
except for a field oxide layer formed directly on the substrate in
another embodiment.
Inventors: |
Liu; Kun-Yi; (Vancouver,
WA) |
Family ID: |
47354003 |
Appl. No.: |
13/162873 |
Filed: |
June 17, 2011 |
Current U.S.
Class: |
438/666 ;
257/E21.158; 257/E21.249; 438/694 |
Current CPC
Class: |
B81B 2207/012 20130101;
H01L 2924/14 20130101; H01L 23/585 20130101; H01L 2924/0002
20130101; H01L 2924/0002 20130101; H01L 2924/1433 20130101; H01L
2924/00 20130101; B81C 1/00063 20130101; H01L 2924/1461
20130101 |
Class at
Publication: |
438/666 ;
438/694; 257/E21.158; 257/E21.249 |
International
Class: |
H01L 21/28 20060101
H01L021/28; H01L 21/311 20060101 H01L021/311 |
Claims
1. A method for forming a semiconductor chip with a void area
exposing a substrate, said method comprising: providing a
semiconductor substrate comprising a plurality of product chips,
each said product chip having multiple semiconductor structures and
multiple interconnect structures thereon and including a plurality
of material layers including an uppermost passivation layer;
defining a blank area on at least one said product chip; processing
said passivation layer through at least a pattern definition
operation, a passivation layer etching operation and a photoresist
stripping operation; and after said processing, forming at least
one opening that extends through said plurality of material layers
including said uppermost passivation layer, and terminates on a
surface of said semiconductor substrate in said blank area.
2. The method as in claim 1, wherein said processing said
passivation layer comprises processing said passivation layer
through said passivation layer etching operation only in areas
other than said blank area.
3. The method as in claim 1, wherein said forming at least one
opening comprises forming an array of said openings, each opening
having an area of at least 40 microns.times.40 microns.
4. The method as in claim 3, wherein said forming at least one
opening comprises coating with photoresist, forming a deep trench
pattern in said photoresist then performing a continuous deep
trench etching operation that etches through said plurality of
material layers.
5. The method as in claim 3, wherein said openings of said array of
openings are separated by dummy portions that include at least some
of said semiconductor structures and said interconnect structures
therein.
6. The method as in claim 1, wherein said defining a blank area
comprises defining only one said blank area and said forming at
least one opening comprises forming a single circular opening
having a diameter of about 200 microns.
7. The method as in claim 1, wherein said forming at least one
opening comprises forming a single opening having an area of about
300 microns.times.300 microns.
8. The method as in claim 7, wherein said forming at least one
opening comprises coating with photoresist, forming a deep trench
pattern in said photoresist then performing a deep trench etching
operation that etches through said plurality of material
layers.
9. The method as in claim 1, wherein said forming at least one
opening comprises coating with photoresist, forming a deep trench
pattern in said photoresist then performing a deep trench etching
operation that etches through said plurality of material layers and
exposes said surface.
10. The method as in claim 9, wherein said deep trench etching
operation comprises a single etching operation and said plurality
of material layers includes an aggregate thickness of about 9
microns.
11. The method as in claim 1, wherein said plurality of material
layers includes an aggregate thickness of about 9 microns.
12. The method as in claim 1, wherein said plurality of material
layers comprises a plurality of dielectric layers.
13. The method as in claim 1, further comprising forming a seal
ring surrounding said blank area, said seal ring including a
tungsten lead disposed over a conductive lead and having a further
conductive lead disposed thereon.
14. The method as in claim 1, wherein said defining a blank area
comprises one blank area comprising at least about 10% of an area
of said product chip and wherein said product chips comprise
application specific integrated circuits.
15. The method as in claim 1, wherein said blank area includes at
least dielectric materials and is void of active semiconductor
devices.
16. A method for forming a semiconductor chip with a void area,
said method comprising: providing a semiconductor substrate
comprising a plurality of product chips, each said product chip
having multiple semiconductor structures and multiple interconnect
structures thereon and including a plurality of material layers
including an uppermost passivation layer; defining a blank area on
at least one said product chip; processing said passivation layer
through at least a pattern definition operation, a passivation
layer etching operation and a photoresist stripping operation; and
after said processing, forming at least one opening that extends
through said plurality of material layers including said uppermost
passivation layer, and terminates on an exposed surface, said
exposed surface comprising a field oxide layer disposed directly on
a surface of said semiconductor substrate in said blank area, and
said at least one opening includes an area that is at least about
5-10% of an area of said product chip.
17. The method as in claim 1, wherein said plurality of material
layers comprises a plurality of dielectric layers disposed over a
polysilicon layer and said forming at least one opening comprises
coating with photoresist, forming a deep trench pattern in said
photoresist then etching through said plurality of material layers
using a sequence of etch operations including a single dielectric
etch operation followed by a polysilicon etch operation.
18. The method as in claim 17, wherein said processing said
passivation layer comprises processing said passivation layer
through said passivation layer operation only in areas other than
said blank area.
19. A method for forming a semiconductor chip with a void area
exposing a substrate, said method comprising: providing a plurality
of chips on a silicon substrate, each chip having multiple
semiconductor devices thereon and multiple interconnect structures
thereon and including a plurality of material layers including an
uppermost nitride passivation layer; defining only a single blank
area on at least one said chip; processing said passivation layer
through pattern definition, passivation etching and photoresist
stripping operations in areas other than said single blank area;
after said processing, coating said silicon substrate with a
photoresist; patterning said photoresist with a deep trench pattern
then performing a deep trench etching operation that forms at least
one opening only in said blank area; said at least one opening
terminating at an exposed surface of said silicon substrate.
20. The method as in claim 19, wherein said performing a deep
trench etching operation comprises performing a single etching
operation that etches through materials having an aggregate
thickness of about 9 microns.
Description
TECHNICAL FIELD
[0001] The disclosure relates to methods for manufacturing
semiconductor product chip that include a relatively large void
area that extends to the substrate surface.
BACKGROUND
[0002] In today's electronics industry, advanced semiconductor chip
design and assembly techniques allow for increased levels of
integration and the production of more compact electronic devices.
For example, dual packages are utilized that include different
types of semiconductor devices within the same package. One example
may be an ASIC (application specific integrated circuit) product
chip that may be used in a dual package with a MEMS
(microelectromechanical) part. Other advantageous packaging
techniques may utilize MEMS parts in combination with one or more
other product chips within a package. The increased integration
levels in packaging may utilize bonding techniques other than
conventional wire bonding or soldering. One such technique involves
the bonding of an ASIC product chip within a package by directly
joining the ASIC product chip to another device such as a MEMS
device.
[0003] Some of the new techniques for packaging semiconductor chips
and/or coupling semiconductor chips to other components benefit
from having non-conventional structures on the semiconductor chip.
These unconventional structures enable the advances in packaging
integration, but there are typically challenges associated with
producing the non-conventional structures using conventional
semiconductor processing methods due to the limitations in the
conventional semiconductor processing methods. In particular, it is
challenging to produce defect-free non-conventional structures
using processing methods developed to produce conventional
structures.
[0004] The disclosure addresses the limitations in the chip
structures available for such non-conventional bonding due to the
shortcomings and limitations associated with the processing
techniques used to manufacture semiconductor chips.
BRIEF DESCRIPTION OF THE DRAWING
[0005] The present disclosure is best understood from the following
detailed description when read in conjunction with the accompanying
drawing. It is emphasized that, according to common practice, the
various features of the drawing are not necessarily to scale. On
the contrary, the dimensions of the various features may be
arbitrarily expanded or reduced for clarity. Like numerals denote
like features throughout the specification and drawing.
[0006] FIG. 1 is a plan view showing an exemplary layout of a deep
trench structure formed according to a method of the
disclosure;
[0007] FIG. 2 is a plan view showing another exemplary layout of a
deep trench structure formed according to a method of the
disclosure;
[0008] FIG. 3 is a plan view showing yet another exemplary layout
of a deep trench structure formed according to a method of the
disclosure;
[0009] FIGS. 4A-4B are cross-sectional views showing an exemplary
sequence of processing operations according to the disclosure;
[0010] FIGS. 5A-5C are cross-sectional views showing another
exemplary sequence of processing operations according to the
disclosure;
[0011] FIG. 6 is a plan view illustrating a seal ring feature
formed according to the disclosure; and
[0012] FIG. 7 is a perspective view of a seal ring advantageously
formed according to a method of the disclosure.
DETAILED DESCRIPTION
[0013] The disclosure provides a method for forming one or more
deep trench openings on a semiconductor chip. The deep trench
opening extends from the uppermost, passivation layer used in the
semiconductor chip to the substrate surface itself according to one
embodiment. The deep trench opening or openings include a
significantly high area and the area may represent an area that may
be about 10% of the area of the entire semiconductor chip,
according to one exemplary embodiment. According to various
exemplary embodiments, the deep trench opening may be rectangular
in shape, circular in shape, oblong in shape, ovoid in shape,
trapezoidal in shape or it may take on various other suitable
shapes. According to one exemplary embodiment, a blank area of the
semiconductor chip is identified and one or a plurality of deep
trench openings area formed in the blank area. The plurality of
deep trench openings may be formed in an array in the blank area.
According to one exemplary embodiment, the array of openings may be
separated by dummy features in the blank area.
[0014] According to various exemplary embodiments, the deep trench
opening or openings may be formed after the passivation layer has
been formed and patterned, i.e. after the passivation etching
process has been used to create openings through the passivation
layer only, such openings extending down to a subjacent conductive
feature such as a bond pad. According to one exemplary embodiment,
the passivation layer patterning and etching prior to the deep
trench formation may include etching the passivation layer only in
areas other than the blank area in which the passivation layer
remains intact. According to various exemplary embodiments, the
portion of the blank area in which the deep trench openings are to
be formed, may consist only of a stack of several dielectric
materials, and according to another exemplary embodiment, the blank
area in which the opening or openings are to be formed may consist
of a plurality of several dielectric layers formed over a
polysilicon layer formed over a field oxide layer.
[0015] FIG. 1 is a plan view showing an exemplary semiconductor
chip 1. Semiconductor chip 1 may be an ASIC chip or any of various
other integrated circuit devices and is alternatively referred to
as a die. Semiconductor chip 1 includes various active devices,
other semiconductor structures and interconnect structures in areas
other than blank area 3. Blank area 3 including exemplary deep
trench opening 5 is included on semiconductor chip 1. Semiconductor
chip 1 has an area determined by length 7 and width 9. According to
one exemplary embodiment, width 7 may range from about 1-2
millimeters and width 9 may range from about 0.8 to 1.4
millimeters. According to one exemplary embodiment, deep trench
opening 5 may be a square with dimensions of 300 microns.times.300
microns and may include an area that is about 10% of the total area
of semiconductor chip 1 as defined by length 7 and width 9. In
other exemplary embodiments, deep trench opening 5 may take on
other shapes such as but not limited to rectangular, oblong, ovoid,
circular, or trapezoidal in shape.
[0016] FIG. 2 shows another exemplary semiconductor chip 1 having
an area defined by width 7 and length 9 and includes another
exemplary blank area 13. Blank area 13 includes an array of
discrete deep trench openings 15 separated by dummy area 17. Deep
trench openings 15 may be square, rectangular, oblong, ovoid,
circular or trapezoidal in shape or they may take on other shapes
in other exemplary embodiments. The deep trench openings that form
the array, may be of different sizes and shapes.
[0017] The area of each deep trench opening 5 or 15 is determined
by its shape and its lateral dimensions which may range from about
20 microns to about 400 microns in various exemplary embodiments.
According to one exemplary embodiment, the area of deep trench
opening 5 shown in FIG. 1 or the aggregate area of the deep trench
openings 15 shown in FIG. 2 may be at least 5% of the total area of
semiconductor chip 1 as defined by length 7 and width 9 and in one
exemplary embodiment the aggregate area may be about 10% of the
total area of semiconductor chip 1.
[0018] FIG. 3 is a plan view showing yet another exemplary plan
view of a deep trench opening formed according to the method of the
disclosure. Semiconductor chip 1 includes blank area 3 with
circular deep trench opening 5. Deep trench opening 5 includes an
area defined by diameter 19 which may range from about 100 microns
to about 300 microns in various exemplary embodiments and may be
about 200 microns according to one exemplary embodiment.
[0019] FIG. 4A shows semiconductor substrate 21 and illustrates an
embodiment in which a deep trench opening will be formed in region
39 within blank area 3 such as previously shown in FIGS. 1-3.
According to one exemplary embodiment, substrate 21 with substrate
surface 23 may be a silicon substrate, but according to other
exemplary embodiments, substrate 21 may be a gallium arsenide
substrate, a silicon germanium substrate, or any of various SOI
(silicon-on-insulator) or other substrates such as used in the
semiconductor manufacturing industry.
[0020] The exemplary film structure shown in FIG. 4A includes first
polysilicon layer 25 and second polysilicon layer 27 which are
formed within blank region 3 but do not extend into region 39.
These films may be formed and utilized for active device features
throughout the other areas of the semiconductor chip and patterned
during the patterning operations used to form semiconductor
structures in other portions of semiconductor chip 1. The other
films illustrated in FIG. 4A may represent dielectric films also
used throughout semiconductor chip 1 and according to one exemplary
embodiment, the film stack within region 39 may represent all of
the dielectric materials used in semiconductor chip 1.
[0021] According to one exemplary embodiment, dielectric layer 29
may be an ILD (inter level dielectric) used throughout
semiconductor chip 1, dielectric film 31 may be a first inter-metal
dielectric (IMD1), dielectric layer 33 may be a second inter-metal
dielectric (IMD2) and dielectric layer 35 may be a passivation SOG
(spin on glass) layer. The film stack is intended to be exemplary
only and in other exemplary embodiments, more or fewer films may be
used. Each of the films may be formed of various suitable
dielectric materials that may be formed using conventional or other
means. Passivation layer 37 is the uppermost layer and various
suitable passivation materials such as nitrides or oxynitrides may
be used for passivation layer 37. It can be seen that dielectric
layer 29 extends to substrate surface 23 in region 39 where first
and second polysilicon layers 25, 27 are absent. Film stack
thickness 41 may range from about 7 to 9 microns in various
exemplary embodiments, but according to other exemplary
embodiments, other suitable thicknesses may be utilized depending
on the device being formed and the number and thicknesses of the
individual films. Width 45 of region 39 may range from about 20
microns to about 400 microns and may depend upon the geometrical
shape of region 39 that defines the deep trench opening, as well as
the number of deep trench openings being formed in a given blank
region. Region 39 of FIG. 4A may represent a single deep trench
opening to be formed in blank region 3 (as in FIGS. 1 and 3) or one
of several deep trench openings to be formed in blank region 3 (as
in FIG. 2). The structure illustrated in FIG. 4A represents blank
area 3 portion of semiconductor chip 1 after semiconductor chip 1
has been processed through passivation layer processing operations
such as the formation, patterning and etching of passivation layer
37. As such, in some other areas of semiconductor chip 1,
passivation layer 37 has been removed by an etching operation to
expose a subjacent feature such as a bond pad.
[0022] A photoresist layer is then formed over passivation layer 37
and patterned such that it is removed from region 39.
[0023] With the photoresist (not shown) in place and serving as a
mask, an etching operation is carried out to form deep trench
opening 5 such as shown in FIG. 4B. Deep trench opening 5 extends
completely through passivation layer 37 and each of dielectric
layers 35, 33, 31 and 29, exposing surface 23 of substrate 21. Deep
trench opening 5 may be formed by a single continuous etching
operation that successively etches through the passivation layer
then each of the dielectric layers terminating at surface 23. After
the etching operation is concluded, the photoresist is removed
using a stripping operation followed by one or more cleaning
operations as will be described in further detail infra. Deep
trench opening 5 include sidewalls 51 which are shown as being
significantly sloped in the illustrated embodiment. Deep trench
opening 5 may exhibit various degrees of taper in other exemplary
embodiments. Bottom width 49 may represent a percentage of width 45
and may range from about 75% to substantially 100% of width 45
depending on the amount of taper.
[0024] FIG. 5A shows another exemplary embodiment. It should be
understood that like numerals denote like features throughout the
specification and drawing. The embodiment shown in FIG. 5A differs
from the embodiment shown in FIG. 4A due to the presence of second
polysilicon layer 27 extending through region 39 and also due to
the presence of field oxide, F.sub.OX, 53 also formed within region
39.
[0025] FIG. 5B shows the structure of FIG. 5A after patterning and
etching operations have been carried out on the structure shown in
FIG. 5A. A photoresist layer is formed on the structure of FIG. 5A
except in region 39 and serves as a photomask during an etching
operation that etches through passivation layer 37 and dielectric
layers 35, 33, 31 and 29, terminating on top surface 55 of second
polysilicon layer 27 as shown in FIG. 5B.
[0026] The etching continues through second polysilicon layer 27
within region 39 to produce the structure shown in FIG. 5C. FIG. 5C
shows deep trench opening 5, extending through passivation layer
37, dielectric layers 35, 33, 31 and 29, and second polysilicon
layer 27 within region 39 thereby exposing upper surface 59 of
F.sub.OX 53. According to the exemplary embodiment shown in FIGS.
5A-5C, a sequence of etching operations may be used. According to
one exemplary embodiment, the sequence of etching operations may
include a first etching operation that etches through passivation
layer 37 and each of the aforementioned dielectric layers and
terminates on second polysilicon layer 27, followed by a second
etching operation that etches through second polysilicon layer
27.
[0027] Sloped sidewalls 51 are illustrated in exaggerated condition
in FIG. 5C in order to show this aspect of the disclosure, and
according to other exemplary embodiments, sidewalls 51 may be close
to or substantially vertical.
[0028] After the succession of etching operations has been
completed, the photoresist film may be removed using a conventional
dry resist stripping operation which may be followed by one or more
subsequent cleaning operations to produce the cleaned, defect-free
structure shown in FIG. 5C. According to one exemplary embodiment,
a dry resist stripping operation may be followed by a wet
stripping/cleaning operation followed by a second dry resist
stripping operation. The combination of cleaning operations is
intended to be exemplary only.
[0029] FIG. 6 is a plan view illustrating another aspect of a
feature formed according to the invention. FIG. 6 shows
semiconductor chip 1 with blank area 13 and an array of deep trench
openings 15 as previously described. Seal ring 69 surrounds blank
area 13 and also semiconductor chip 1. Dummy area 17 is also shown
and represents regions within blank area 3 that are not etched to
form deep trench openings as previously illustrated. Dummy area 17
is also identified in FIG. 5C and includes each of dielectric
layers 29, 31, 33, and 35 as well as passivation layer 37 and first
polysilicon layer 25 and second polysilicon layer 27. According to
other exemplary embodiments, dummy area 17 may include additional
features, including, but not limited to other semiconductor
materials and interconnect materials. The various components of
dummy area 17 may be patterned and processed along with features on
other portions of semiconductor chip 1 to provide pattern
uniformity which is beneficial in planarization processes.
[0030] In one exemplary embodiment, seal ring 69 may include plug
material 73 disposed between lower conductor 75 and upper conductor
77 as shown in FIG. 7. Upper conductor 77 and lower conductor 75
may be formed of copper, aluminum or other suitable conductive
interconnect materials and plug material 73 may be tungsten, W,
which is known to reduce the effects of humidity on semiconductor
devices, or other suitable plug materials used in the semiconductor
manufacturing industry. Seal ring 69 may be fabricated using the
sequence of processing operations used to form semiconductor chip
1, which typically includes multiple layers of conductive
interconnect material which are coupled using tungsten or other
suitable plugs such as formed using damascene technology.
Additional materials or processing operations are not required as
seal ring 69 is formed using the formation and patterning
operations for forming lower conductor 75, plug material 73 and
upper conductor 77 in other areas of semiconductor chip 1. Seal
ring 69 surrounds semiconductor chip 1 and blank area 13 and may
serve to hermetically seal a further component coupled to
semiconductor chip 1 at one or more of the deep trench opening
sites.
[0031] According to one aspect, the disclosure provides a method
for forming a semiconductor chip with a void area exposing a
substrate. The method comprises providing a semiconductor substrate
comprising a plurality of product chips, each product chip having
multiple semiconductor structures and multiple interconnect
structures thereon and including a plurality of material layers
including an uppermost passivation layer. The method further
comprises defining a blank area on at least one product chip,
processing the passivation layer through at least a pattern
definition operation, a passivation layer etching operation and a
photoresist stripping operation and, afterward, forming at least
one opening that extends through the plurality of material layers
including the uppermost passivation layer and terminates on the
surface of the semiconductor substrate in the blank area.
[0032] According to another aspect, provided is a method for
forming a semiconductor chip with a void area, the method
comprising providing a semiconductor substrate comprising a
plurality of product chips, each product chip having multiple
semiconductor structures and multiple interconnect structures
thereon and including a plurality of material layers including an
uppermost passivation layer. The method further comprises defining
a blank area on at least one product chip, processing the
passivation layer through at least a pattern definition operation,
a passivation layer etching operation and a photoresist stripping
operation, and, after processing the passivation layer, forming at
least one opening that extends through the plurality of material
layers including the uppermost passivation layer and terminates on
an exposed surface. The exposed surface is a field oxide layer
disposed directly on the surface of the semiconductor substrate in
the blank area and the at least one opening includes an area that
is at about 5-10% of an area of the product chip.
[0033] According to a further aspect, a method for forming a
semiconductor chip with a void area exposing a substrate is
provided. The method comprises providing a plurality of chips on a
silicon substrate, each chip having multiple semiconductor devices
thereon and multiple interconnect structures thereon and including
a plurality of material layers including an uppermost nitride
passivation layer. The method further comprises defining only a
single blank area on at least one chip, and processing the
passivation layer through pattern definition, passivation etching
and photoresist stripping operations. After processing the
passivation layer, the method further provides coating the silicon
substrate with a photoresist, patterning the photoresist with a
deep trench pattern then performing a deep trench etching operation
that forms at least one opening only in the blank area. The at
least one opening terminates at an exposed surface of the silicon
substrate.
[0034] The preceding merely illustrates the principles of the
disclosure. It will thus be appreciated that those skilled in the
art will be able to devise various arrangements which, although not
explicitly described or shown herein, embody the principles of the
disclosure and are included within its spirit and scope.
Furthermore, all examples and conditional language recited herein
are principally intended expressly to be only for pedagogical
purposes and to aid the reader in understanding the principles of
the disclosure and the concepts contributed by the inventors to
furthering the art, and are to be construed as being without
limitation to such specifically recited examples and conditions.
Moreover, all statements herein reciting principles, aspects, and
embodiments of the disclosure, as well as specific examples
thereof, are intended to encompass both structural and functional
equivalents thereof. Additionally, it is intended that such
equivalents include both currently known equivalents and
equivalents developed in the future, i.e., any elements developed
that perform the same function, regardless of structure.
[0035] This description of the exemplary embodiments is intended to
be read in connection with the figures of the accompanying drawing,
which are to be considered part of the entire written description.
In the description, relative terms such as "lower," "upper,"
"horizontal," "vertical," "above," "below," "up," "down," "top" and
"bottom" as well as derivatives thereof (e.g., "horizontally,"
"downwardly," "upwardly," etc.) should be construed to refer to the
orientation as then described or as shown in the drawing under
discussion. These relative terms are for convenience of description
and do not require that the apparatus be constructed or operated in
a particular orientation. Terms concerning attachments, coupling
and the like, such as "connected" and "interconnected," refer to a
relationship wherein structures are secured or attached to one
another either directly or indirectly through intervening
structures, as well as both movable or rigid attachments or
relationships, unless expressly described otherwise.
[0036] Although the disclosure has been described in terms of
exemplary embodiments, it is not limited thereto. Rather, the
appended claims should be construed broadly, to include other
variants and embodiments of the disclosure, which may be made by
those skilled in the art without departing from the scope and range
of equivalents of the disclosure.
* * * * *