U.S. patent application number 13/475753 was filed with the patent office on 2012-11-22 for method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device.
Invention is credited to Keiichi Hatakeyama, Yuuki Nakamura.
Application Number | 20120295400 13/475753 |
Document ID | / |
Family ID | 40549205 |
Filed Date | 2012-11-22 |
United States Patent
Application |
20120295400 |
Kind Code |
A1 |
Hatakeyama; Keiichi ; et
al. |
November 22, 2012 |
METHOD FOR PRODUCING SEMICONDUCTOR CHIP WITH ADHESIVE FILM,
ADHESIVE FILM FOR SEMICONDUCTOR USED IN THE METHOD, AND METHOD FOR
PRODUCING SEMICONDUCTOR DEVICE
Abstract
The method for producing a semiconductor chip with an adhesive
film includes preparing a laminate of a divided semiconductor
wafer, an adhesive film and a dicing tape, the adhesive film having
a thickness in the range of 1 to 15 .mu.m and a tensile elongation
at break of less than 5%, and the tensile elongation at break being
less than 110% of the elongation at a maximum load; and dividing
the adhesive film for a semiconductor by picking up the plurality
of semiconductor chips in a laminating direction of the laminate.
The divided semiconductor wafer has been obtained by cutting the
semiconductor wafer in a thickness less than that of the
semiconductor wafer and by grinding the other side of the
semiconductor wafer on which no cut is formed to reach the cut.
Inventors: |
Hatakeyama; Keiichi;
(Tsukuba-shi, JP) ; Nakamura; Yuuki; (Hitachi-shi,
JP) |
Family ID: |
40549205 |
Appl. No.: |
13/475753 |
Filed: |
May 18, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12682254 |
Aug 26, 2010 |
8198176 |
|
|
PCT/JP2008/068237 |
Oct 7, 2008 |
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13475753 |
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Current U.S.
Class: |
438/107 ;
257/E21.499; 257/E21.599; 428/220; 438/113 |
Current CPC
Class: |
H01L 2924/01015
20130101; H01L 2924/15747 20130101; H01L 2924/00014 20130101; H01L
24/48 20130101; H01L 2924/0665 20130101; H01L 2924/12042 20130101;
H01L 2224/32225 20130101; H01L 2924/00014 20130101; H01L 2924/0102
20130101; H01L 2224/83855 20130101; H01L 2224/73265 20130101; H01L
2224/85 20130101; H01L 24/73 20130101; H01L 2224/2919 20130101;
H01L 2224/48091 20130101; H01L 2924/181 20130101; H01L 24/85
20130101; H01L 2224/83885 20130101; H01L 2224/2919 20130101; H01L
2224/73265 20130101; H01L 2924/01047 20130101; H01L 2924/3512
20130101; H01L 2224/48091 20130101; H01L 2221/68322 20130101; H01L
2224/92247 20130101; H01L 2924/15788 20130101; H01L 21/6836
20130101; H01L 2924/00014 20130101; H01L 2924/01006 20130101; H01L
2924/15747 20130101; H01L 2924/181 20130101; H01L 2924/0665
20130101; H01L 2924/01019 20130101; H01L 2924/15788 20130101; H01L
21/6835 20130101; H01L 24/83 20130101; H01L 2221/68327 20130101;
H01L 2224/73265 20130101; H01L 2224/83191 20130101; H01L 2924/01012
20130101; H01L 2224/29006 20130101; H01L 2924/01082 20130101; H01L
2224/48227 20130101; H01L 2924/12042 20130101; H01L 2224/8388
20130101; H01L 2221/68336 20130101; H01L 24/29 20130101; H01L
2924/09701 20130101; H01L 2224/48227 20130101; H01L 2924/00
20130101; H01L 2224/32225 20130101; H01L 2924/00012 20130101; H01L
2224/45015 20130101; H01L 2224/48227 20130101; H01L 2924/00
20130101; H01L 2924/00 20130101; H01L 2924/00012 20130101; H01L
2224/32225 20130101; H01L 2224/48227 20130101; H01L 2924/207
20130101; H01L 2924/00014 20130101; H01L 2224/48227 20130101; H01L
2224/73265 20130101; H01L 2924/00 20130101; H01L 2924/00 20130101;
H01L 2224/45099 20130101; H01L 2224/32225 20130101; H01L 2924/00
20130101; H01L 2924/00 20130101; H01L 2924/00 20130101; H01L
2224/32225 20130101; H01L 23/3121 20130101; H01L 21/67132 20130101;
H01L 2924/01005 20130101; H01L 2924/01051 20130101; H01L 2924/01013
20130101; H01L 2224/73265 20130101; H01L 24/27 20130101; H01L 21/78
20130101; H01L 2924/07802 20130101; H01L 2224/92247 20130101; H01L
2924/01004 20130101; H01L 2224/274 20130101; H01L 2924/01027
20130101; H01L 2924/01029 20130101; H01L 2924/01033 20130101; H01L
2924/10329 20130101; H01L 2924/0665 20130101 |
Class at
Publication: |
438/107 ;
438/113; 428/220; 257/E21.499; 257/E21.599 |
International
Class: |
H01L 21/78 20060101
H01L021/78; C09J 7/00 20060101 C09J007/00 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 9, 2007 |
JP |
P2007-263347 |
Claims
1. A method for producing a semiconductor device, comprising a step
of bonding a semiconductor chip with an adhesive film to another
semiconductor chip or to a semiconductor chip mounting support
member, wherein said semiconductor chip with an adhesive film has
been obtained by a method comprising: preparing a laminate in which
at least a divided semiconductor wafer comprising a plurality of
semiconductor chips, obtained by forming a cut which separates the
semiconductor wafer into a plurality of semiconductor chips on one
side of the semiconductor wafer in a thickness less than that of
the semiconductor wafer and by grinding the other side of the
semiconductor wafer on which no cut is formed to reach the cut, an
adhesive film for a semiconductor and a dicing tape are laminated,
the adhesive film for a semiconductor having a thickness in the
range of 1 to 15 .mu.m and a tensile elongation at break of less
than 5%, and the tensile elongation at break being less than 110%
of the elongation at a maximum load; and dividing the adhesive film
for a semiconductor by picking up the plurality of semiconductor
chips in a laminating direction of the laminate, thereby preparing
the semiconductor chip with the adhesive film.
2. An adhesive film for a semiconductor used in the method
according to claim 1, the adhesive film for a semiconductor having
the thickness in the range of 1 to 15 .mu.m and the tensile
elongation at break of less than 5%, the tensile elongation at
break being less than 110% of the elongation at a maximum load.
Description
[0001] This application is a Divisional application of prior
application Ser. No. 12/682,254, filed Aug. 26, 2010, the contents
of which are incorporated herein by reference in their entirety.
Ser. No. 12/682,254 is a National Stage Application filed under 35
USC 371 of International (PCT) Application No. PCT/JP2008/068237,
filed Oct. 7, 2008.
TECHNICAL FIELD
[0002] The present invention relates to a method for producing a
semiconductor chip with an adhesive film, an adhesive film for a
semiconductor used in the method and a method for producing a
semiconductor device.
BACKGROUND ART
[0003] Heretofore, silver paste has been mainly used for bonding a
semiconductor chip and a semiconductor chip mounting support
member. However, with the downsizing and high performance of
semiconductor chips and the downsizing and miniaturization of
support members used, some problems have arisen with the method
using silver paste, such as the occurrence of failures in wire
bonding caused by the extrusion of paste or inclined semiconductor
chips, the difficulty in controlling the film thickness of adhesive
layers and the generation of voids in adhesive layers. Also, in the
field of mobile devices where further miniaturization and a higher
density are required, semiconductor devices in which a plurality of
semiconductor chips are laminated have been developed and
mass-produced, and the above problems tend to become apparent
particularly when such semiconductor devices are produced. For the
above reasons, film adhesives (hereinafter referred to as an
adhesive film for a semiconductor) have been recently used instead
of silver paste.
[0004] Examples of methods of producing a semiconductor device
using an adhesive film for a semiconductor include: (1) a piece
lamination process in which an adhesive film for a semiconductor
which has been cut in any size is laminated on a semiconductor chip
mounting support member such as a wiring board or a semiconductor
chip, and a semiconductor chip is bonded thereto by
thermocompression bonding; and (2) a wafer back-side lamination
process, in which an adhesive film for a semiconductor is laminated
on the back side of a semiconductor wafer and the resultant is cut
into pieces with a rotary blade to prepare a semiconductor chip
with an adhesive film, and the chip is bonded to a semiconductor
chip mounting support member or a semiconductor chip by
thermocompression bonding. Recently, to simplify the production
process of semiconductor devices, the wafer back-side lamination
process described in the above (2) has become the mainstream.
[0005] In the wafer back-side lamination process, it has been
common to cut a semiconductor wafer on which an adhesive film for a
semiconductor is laminated with a rotary blade as described above.
However, cutting a semiconductor wafer and an adhesive film
simultaneously by a general dicing method using a rotary blade has
had the problem of the occurrence of cracks (chip cracks) at the
edge of the semiconductor chip after cutting or the occurrence of
much flash due to the rough section of the adhesive film. The
presence of such chip cracks and flash makes it easier for
semiconductor chips to be broken when they are picked up. In
particular, picking up semiconductor chips cut from a thinned
semiconductor wafer without cracks becomes difficult.
[0006] So recently methods have been proposed, in which a street
for partitioning formed on the surface of a semiconductor wafer is
cut so as to form a dicing groove and the back side of the wafer is
ground to reach the bottom of the dicing groove, thereby dividing
the semiconductor wafer into semiconductor chips (see, for example,
Patent Documents 1 and 2). And the following methods are for
forming an adhesive film having the same size as a semiconductor
chip prepared by such a dicing-before-grinding process on the back
side of the semiconductor chip. [0007] (a) A method including
preparing a laminate of a semiconductor wafer (a plurality of
semiconductor chips) divided by a dicing-before-grinding process,
an adhesive film for a semiconductor and a dicing tape, and
dividing the adhesive film for a semiconductor by expanding the
dicing tape by an expanding device. [0008] (b) A method including
preparing a laminate of a semiconductor wafer (a plurality of
semiconductor chips) divided by a dicing-before-grinding process
and an adhesive film for a semiconductor, and cutting the adhesive
film for a semiconductor with a laser dicer along a street (diced
line) on the wafer surface.
[0009] Patent Document 1: Japanese Patent Application Laid-Open No.
2002-016021
[0010] Patent Document 2: Japanese Patent Application Laid-Open No.
2002-367933
DISCLOSURE OF THE INVENTION
[0011] However, the above method (a) requires a separate expanding
device and has the problem of the occurrence of film extension from
chip ends or extrusion of flash or the like when dividing the
adhesive film for a semiconductor. Further, the above method (b)
requires a separate laser dicing device and needs an identification
procedure for each line so as to deal with the shift of streets
(kerf shift), and so cutting an adhesive film for a semiconductor
efficiently in a short time is difficult. As described above, even
when employing a dicing-before-grinding process for producing a
semiconductor device, further improvement is necessary for dividing
an adhesive film in order to achieve both assembling properties and
reliability.
[0012] The present invention has been made in view of the
above-described circumstances and an object of the present
invention is to provide a method for producing a semiconductor chip
with an adhesive film, capable of producing a semiconductor chip
from a semiconductor wafer at a good yield and capable of producing
a semiconductor chip with an adhesive film laminated thereon in
which flash is sufficiently little and which has substantially the
same shape as that of the semiconductor chip, an adhesive film for
a semiconductor suitably used in the method for producing a
semiconductor chip with an adhesive film, and a method for
producing a semiconductor device capable of achieving both
assembling properties and reliability.
[0013] To solve the above problems, the method for producing a
semiconductor chip with an adhesive film of the present invention
comprises steps of: preparing a laminate in which at least a
divided semiconductor wafer comprising a plurality of semiconductor
chips, obtained by forming a cut which separates the semiconductor
wafer into a plurality of semiconductor chips on one side of the
semiconductor wafer in a thickness less than that of the
semiconductor wafer and by grinding the other side of the
semiconductor wafer on which no cut is formed to reach the cut, an
adhesive film for a semiconductor and a dicing tape are laminated,
the adhesive film for a semiconductor having a thickness in the
range of 1 to 15 .mu.m and a tensile elongation at break of less
than 5%, and the tensile elongation at break being less than 110%
of the elongation at a maximum load; and dividing the adhesive film
for a semiconductor by picking up the plurality of semiconductor
chips in a laminating direction of the laminate, thereby preparing
a semiconductor chip with an adhesive film.
[0014] According to the method for producing a semiconductor chip
with an adhesive film of the present invention, by combining a
dicing-before-grinding process and the above-described specific
adhesive film for a semiconductor, and by dividing the adhesive
film for a semiconductor using the shearing force generated when
picking up semiconductor chips, a semiconductor chip can be
produced from a semiconductor wafer at a good yield, and a
semiconductor chip with an adhesive film laminated thereon in which
flash is sufficiently little and which has substantially the same
shape as that of the semiconductor chip can be easily prepared.
[0015] When the thickness of an adhesive film for a semiconductor
is less than 1 .mu.m, preparing the adhesive film becomes
difficult, and when the thickness is more than 15 .mu.m, dividing
the adhesive film for a semiconductor by picking up of
semiconductor chips becomes difficult. When the adhesive film for a
semiconductor has a tensile elongation at break of 5% or more, the
amount of expansion of the dicing tape needs to be made greater
than usual. When the ratio of the tensile elongation at break to
the elongation at the maximum load is 110% or more, completely
dividing the adhesive film for a semiconductor with preventing
flash from occurring becomes difficult, and so preparing an
adhesive film suited to the shape of semiconductor chips becomes
difficult.
[0016] The method for producing a semiconductor device of the
present invention includes a step of bonding the semiconductor chip
with an adhesive film obtained by the method for producing a
semiconductor chip with an adhesive film of the present invention
to another semiconductor chip or a semiconductor chip mounting
support member.
[0017] The method for producing a semiconductor device of the
present invention makes it possible to achieve both assembling
properties and reliability by using a semiconductor chip with an
adhesive film obtained by the method for producing a semiconductor
chip with an adhesive film of the present invention.
[0018] The present invention also provides an adhesive film for a
semiconductor used in the method for producing a semiconductor chip
with an adhesive film of the present invention, which has a
thickness in the range of 1 to 15 .mu.m and a tensile elongation at
break of less than 5%, and in which the tensile elongation at break
is less than 110% of the elongation at the maximum load.
EFFECT OF THE INVENTION
[0019] The present invention can provide a method for producing a
semiconductor chip with an adhesive film, capable of producing a
semiconductor chip from a semiconductor wafer at a good yield and
capable of producing a semiconductor chip with an adhesive film
laminated thereon in which flash is sufficiently little and which
has substantially the same shape as that of the semiconductor chip,
an adhesive film for a semiconductor suitably used in the method
for producing a semiconductor chip with an adhesive film and a
method for producing a semiconductor device capable of achieving
both assembling properties and reliability.
BRIEF DESCRIPTION OF THE DRAWINGS
[0020] FIG. 1 is a schematic cross-sectional view illustrating a
method for producing a semiconductor chip with an adhesive film
according to an embodiment;
[0021] FIG. 2 is a schematic cross-sectional view illustrating a
method for producing a semiconductor chip with an adhesive film
according to an embodiment;
[0022] FIG. 3 is a schematic cross-sectional view illustrating a
method for producing a semiconductor chip with an adhesive film
according to an embodiment;
[0023] FIG. 4 is a schematic cross-sectional view illustrating a
method for producing a semiconductor chip with an adhesive film
according to an embodiment;
[0024] FIG. 5 is a schematic cross-sectional view illustrating a
method for producing a semiconductor chip with an adhesive film
according to an embodiment; and
[0025] FIG. 6 is a cross-sectional view illustrating an embodiment
of a semiconductor device.
BEST MODES FOR CARRYING OUT THE INVENTION
[0026] Hereinafter preferred embodiments of the present invention
will be described in detail.
[0027] FIGS. 1, 2, 3, 4 and 5 are schematic cross-sectional views
illustrating a preferred embodiment of a method for producing a
semiconductor chip with an adhesive film of the present invention.
The method for producing a semiconductor chip with an adhesive film
according to this embodiment comprises a first step (FIG. 1) of
forming a cut 21 which separates a semiconductor wafer 1 into a
plurality of semiconductor chips on one side of the semiconductor
wafer 1 (side on which a circuit is formed) to a depth D1 which is
less than the thickness of the semiconductor wafer and deeper than
a final finished thickness, a second step (FIG. 2) of preparing a
divided semiconductor wafer 7 comprising a plurality of
semiconductor chips by grinding the other side of the semiconductor
wafer on which no cut is formed to the final finished thickness to
reach the cut 21, a third step (FIG. 3) of preparing a laminate 20
in which the divided semiconductor wafer 7, an adhesive film 8 for
a semiconductor according to the present invention and a dicing
tape 3 are laminated in that order, and a fourth step (FIG. 5) of
dividing the adhesive film 8 for a semiconductor by picking up the
plurality of semiconductor chips 7a in the laminating direction of
the laminate with expanding the dicing tape 3 in the direction in
which the plurality of semiconductor chips constituting the divided
semiconductor wafer 7 are each separated (FIG. 4), thereby
preparing a semiconductor chip 30 with an adhesive film. The
semiconductor chip 30 with an adhesive film obtained through these
steps has an adhesive film 8a in which flash is sufficiently little
and which has substantially the same shape as that of the
semiconductor chip 7a.
[0028] A wafer composed of single crystalline silicon,
polycrystalline silicon, various ceramics or compound
semiconductors such as gallium arsenide is used as the
semiconductor wafer 1.
[0029] In the above-described first step, the semiconductor wafer 1
is laminated on the dicing tape 3, and the cut 21 is formed by
half-cutting the surface (circuit side) of the semiconductor wafer
by a dicing blade 4 to a depth deeper than the intended final
finished thickness of the semiconductor chip as shown in FIG. 1. In
this embodiment, D1 is preferably 5 to 50 .mu.m larger, more
preferably 10 to 30 .mu.m larger than the final finished
thickness.
[0030] In the above-described second step, a back grind tape 6 is
attached to the side of the semiconductor wafer 1 prepared in the
first step on which the cut 21 has been formed, and the side of the
semiconductor wafer on which no cut is formed is thinned (back
ground) by a back grinding wheel 5 of a back grinding apparatus so
that the wafer reaches a predetermined thickness (final finished
thickness) D2, thereby preparing the divided semiconductor wafer 7
composed of a plurality of semiconductor chips as shown in FIG.
2.
[0031] Fully Automatic Grinder DFG8540 made by DISCO Corporation or
the like, for example, may be used as the back grinding
apparatus.
[0032] Polyethylene terephthalate tapes or the like are used as the
back grind tape 6.
[0033] In the above-described third step, a laminate 20 is prepared
by a method of attaching the adhesive film 8 for a semiconductor
and the dicing tape 3 in that order to the back side of the divided
semiconductor wafer 7 (the side opposite to the back grind tape 6
side), or a method of attaching a composite sheet in which the
adhesive film 8 for a semiconductor and the dicing tape 3 are
laminated on the back side of the divided semiconductor wafer 7 in
such a direction that the adhesive film 8 for a semiconductor is on
the side of the divided semiconductor wafer 7.
[0034] FIG. 3 illustrates a case where the back grind tape 6 is
laminated on the divided semiconductor wafer 7. The back grind tape
6 will be peeled off before the next step. Also, the dicing tape 3
of the laminate 20 shown in FIG. 3 has a wafer ring 2 which is a
fixing ring.
[0035] Any tape may be used as the dicing tape 3 without particular
limitation as long as it has enough adhesiveness to be fixed to the
fixing ring and can be expanded to leave an appropriate space
between each piece of the divided semiconductor wafer (a plurality
of semiconductor chips) 7 upon picking up in the above-described
fourth step. For example, vinyl chloride tape may be used as the
dicing tape. Examples of commercially available tapes include
"AD-80H" and "T-80MW" (trade names, available from DENKI KAGAKU
KOGYO K.K.).
[0036] In the above-described fourth step, the bottom side of the
expanded dicing tape 3 is vacuum sucked by a suction dome 11, and
the portion where a semiconductor chip to be picked up is located
is pushed up by a push-up needle 10, thereby picking up the
semiconductor chip 7a by a pick-up collet 12 in the laminating
direction of the laminate (the direction of arrow C in FIG. 5). At
this stage, a shearing force acts in the thickness direction of the
adhesive film 8 for a semiconductor, and the adhesive film 8 is
divided in the shape of the semiconductor chip 7a. In this way, a
semiconductor chip 30 with an adhesive film 8a laminated thereon in
which flash is sufficiently little and which has substantially the
same shape as that of the semiconductor chip is produced.
[0037] For pick-up systems used in the above-described step,
systems developed for thin chips, such as multi-pin push-up systems
and three-stage push-up systems, made by Renesas Eastern Japan
Semiconductor, Inc. are preferred.
[0038] When using the multi-pin push-up system or a usual pin
push-up system, pins are preferably disposed near and between the
four corners of a chip at regular intervals. In the multi-pin
push-up system, in particular, the suction effect from the bottom
side of the dicing tape is decreased when too many pins are
disposed, and therefore it is preferable to dispose about 9 pins if
they have a size of about 10 mm.times.10 mm.
[0039] Also, it is preferred that a pick-up collet 12 for picking
up a semiconductor chip has substantially the same size as the
chip. For the condition of the pushing up of pins, the push-up
height is preferably up to 2000 .mu.m or less, preferably 700 .mu.m
or less, more preferably 600 .mu.m or less, and further preferably
500 .mu.m or less. Pushing up to a height of more than 2000 .mu.m
is not preferred because the chip may be cracked.
[0040] Pins are pushed up at a rate of preferably 20 to 200 mm/s,
more preferably 30 to 150 mm/s and further preferably 50 to 100
mm/s. Pushing up at less than 20 mm/s is not preferred because
dividing die-bonding film upon pushing up tends to become
difficult.
[0041] In this embodiment, pushing up may be performed in two or
more stages. For example, pins may be pushed up under the
conditions of a push-up height of 250 to 1000 .mu.m and a push-up
rate of 50 to 100 mm/s in the first stage, and under the conditions
of a push-up height of 1000 to 2000 .mu.m and a push-up rate of 1
to 30 mm/s in the second stage.
[0042] For expanding the dicing tape 3, by holding up an expand
ring 9 from the bottom side of the dicing tape 3 (in the direction
of arrow A in FIG. 4), the dicing tape 3 is expanded in such a
direction that each piece of the divided semiconductor wafer (a
plurality of semiconductor chips) 7 is separated (in the direction
of arrow B in FIG. 4). The dicing tape 3 is expanded using a die
bonder.
[0043] For the amount of expansion of the dicing tape 3, when the
dicing tape 3 has an initial maximum width in the range of 200 to
300 mm, the difference between the (maximum) width of the dicing
tape 3 after expansion and the (maximum) initial width of the
dicing tape 3 is preferably 1 to 20 mm, more preferably 2 to 15 mm,
and further preferably 3 to 10 mm.
[0044] The amount of expansion of the dicing tape 3 in this
embodiment can be smaller than that when cutting a conventional
adhesive film for a semiconductor by expansion. Therefore, it is
unnecessary to use an additional expanding device.
[0045] In this embodiment, by applying the specific adhesive film
for a semiconductor of the present invention, an adhesive film 8a
in which flash is sufficiently little and which has substantially
the same shape as that of the semiconductor chips is separated from
the adhesive film for a semiconductor in the above-described
pick-up step.
[0046] In the following, an adhesive film for a semiconductor
according to the present invention will be described.
[0047] The adhesive film for a semiconductor according to the
present invention has a thickness in the range of 1 to 15 .mu.m and
a tensile elongation at break of less than 5%, and the tensile
elongation at break is less than 110% of the elongation at the
maximum load. Such an adhesive film for a semiconductor is composed
of a thermosetting resin and/or a thermoplastic resin.
[0048] When the thickness of an adhesive film for a semiconductor
is less than 1 .mu.m, preparing the adhesive film becomes
difficult, and when the thickness is more than 15 .mu.m, dividing
the adhesive film for a semiconductor by picking up of
semiconductor chips becomes difficult. When the adhesive film for a
semiconductor has a tensile elongation at break of 5% or more, it
is necessary to expand the dicing tape in a greater degree than
usual. A ratio of a tensile elongation at break to the elongation
at the maximum load of 110% or more means long duration of a
yielded state or high possibility of the occurrence of necking. In
such cases, completely dividing the adhesive film for a
semiconductor with preventing flash from occurring becomes
difficult, and so preparing an adhesive film suited to the shape of
semiconductor chips becomes difficult.
[0049] From the above-described reason, the adhesive film for a
semiconductor has a tensile elongation at break of preferably less
than 4%, more preferably less than 3.5%. Likewise, the ratio of a
tensile elongation at break to the elongation at the maximum load
is preferably less than 108%, more preferably less than 105%. The
ratio is the lowest, 100%, when the tensile elongation at break and
the elongation at the maximum load are the same.
[0050] The maximum stress, the elongation at the maximum load and
the tensile elongation at break are measured by a tensile test at
25.degree. C. using a strip test piece having a width of 5 mm, a
length of 50 mm and a thickness of 25 .mu.m cut from a B-stage
adhesive film for a semiconductor under the following conditions.
[0051] Tensile tester: 100N Autograph "AGS-100NH" made by Shimadzu
Corporation [0052] Chuck distance (at start of test): 30 mm [0053]
Tensile rate: 5 mm/minute
[0054] The maximum load, chuck distance at the maximum load and
chuck distance at break are read from a stress-strain curve
obtained in the tensile test, and using these values and the
measured value of the cross-sectional area of a sample, the maximum
stress, the elongation at the maximum load and the tensile
elongation at break are calculated by the following formula.
Maximum stress (Pa)=maximum load (N)/cross sectional area (m.sup.2)
of sample
Elongation at maximum load (%)={(chuck distance (mm) at maximum
load-30)/30}.times.100
Tensile elongation at break (%)={(chuck distance (mm) at
break-30)/30}.times.100
[0055] Generally, a plurality of test pieces is subjected to
measurement and the mean value is recorded as the tensile
properties of the adhesive film for a semiconductor. The tensile
test is preferably carried out under the above-described conditions
in consideration of reproducibility, but they may be changed to
other conditions which produce substantially the same test
results.
[0056] The adhesive film for a semiconductor has a thickness of
preferably 3 to 15 .mu.m, more preferably 5 to 15 .mu.m in
consideration of the adhesion to an adherend and separability of a
film.
[0057] The adhesive film 8 for a semiconductor preferably contains
a high molecular weight component, a thermosetting component and a
filler. By using these components to prepare an adhesive film 8 for
a semiconductor and adjusting the types of components and their
amounts, an adhesive film 8 for a semiconductor having the
above-described specific tensile properties can be produced.
Thermoplastic resins are preferred as the high molecular weight
component.
[0058] The high molecular weight component constituting the
adhesive film for a semiconductor preferably has a glass transition
temperature (Tg) of 60.degree. C. or lower. Also, a high molecular
weight component having a heat resistance of 300.degree. C. or
higher is preferred. Examples of preferred high molecular weight
components include polyimide resins, polyamide imide resins,
phenoxy resins, acrylic resins, polyamide resins and urethane
resins. These may be used alone or in combination of two or more.
Of them, polyimide resins are particularly preferred. Using a
polyimide resin allows the adhesive film 8 for a semiconductor to
have the tensile properties as described above with maintaining a
reasonably small filler content.
[0059] Thermosetting components mean those which can be formed into
a cured product by crosslinking by heating, and are composed of,
for example, a thermosetting resin and a curing agent therefor.
Thermosetting resins are not particularly limited and
conventionally known resins may be used. Of them, in consideration
of the convenience for peripheral materials of semiconductors
(availability of high purity products, diversity of products and
easily controllable reactivity), epoxy resins and imide compounds
having at least 2 thermosetting imide groups in a molecule are
preferred. Epoxy resins are generally used together with an epoxy
resin curing agent.
[0060] Epoxy resins preferably contain 2 or more epoxy groups. In
consideration of curing properties and properties of cured
products, phenol glycidyl ether epoxy resins are preferred.
Examples of phenol glycidyl ether epoxy resins include condensates
of bisphenol A, bisphenol AD, bisphenol S, bisphenol F or
halogenated bisphenol A and epichlorohydrin, glycidyl ether of
phenol novolac resin, glycidyl ether of cresol novolac resin and
glycidyl ether of bisphenol A novolac resin. Of them, novolac epoxy
resins (glycidyl ether of cresol novolac resin, glycidyl ether of
phenol novolac resin and the like) are preferred because their
cured products have a high crosslinking density and the adhesion
strength can be increased upon heating of the film. These may be
used alone or in combination of two or more.
[0061] Examples of epoxy resin curing agents include phenol
compounds, aliphatic amines, alicyclic amines, aromatic polyamines,
polyamides, aliphatic acid anhydrides, alicyclic acid anhydrides,
aromatic acid anhydrides, dicyandiamides, organic acid
dihydrazides, boron trifluoride amine complexes, imidazoles and
tertiary amines. Of them, phenol compounds are preferred, and
phenol compounds having two or more phenolic hydroxyl groups are
particularly preferred. More specifically, naphthol novolac resin
and trisphenol novolac resin are preferred. Using these phenol
compounds as an epoxy resin curing agent makes it possible to
effectively reduce contamination on chip surfaces and devices upon
heating for package assembly and the generation of outgas that
causes odor.
[0062] The tensile properties of the adhesive film for a
semiconductor can be controlled by adjusting the content of filler.
The higher the content of filler, the smaller the tensile
elongation at break may be and the smaller the ratio of the tensile
elongation at break to the elongation at the maximum load may be.
Also, using an appropriate amount of filler can produce advantages
of improving handling properties and thermal conductivity,
adjusting melt viscosity and achieving thixotropic properties.
[0063] For the above purposes, the filler is preferably an
inorganic filler. More specifically, an inorganic filler containing
at least one inorganic material selected from the group consisting
of aluminum hydroxide, magnesium hydroxide, calcium carbonate,
magnesium carbonate, calcium silicate, magnesium silicate, calcium
oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate
whiskers, boron nitride, crystalline silica, amorphous silica and
antimony oxide is preferred. Of them, to improve thermal
conductivity, alumina, aluminum nitride, boron nitride, crystalline
silica and amorphous silica are preferred. For the purpose of
adjusting melt viscosity and achieving thixotropic properties,
aluminum hydroxide, magnesium hydroxide, calcium carbonate,
magnesium carbonate, calcium silicate, magnesium silicate, calcium
oxide, magnesium oxide, alumina, crystalline silica and amorphous
silica are preferred. Also, to improve moisture resistance,
alumina, silica, aluminum hydroxide and antimony oxide are
preferred. A plurality of fillers may be used in combination.
[0064] The higher the content of the filler, the smaller the
tensile elongation at break and the higher the strength at break
may be due to an increased elastic modulus, and the lower the
reflow crack resistance may be due to a decrease in adhesiveness.
In particular, breaking may easily occur between an adherend such
as an organic substrate having irregularities on the surface and a
semiconductor chip upon reflow. Also, a higher content of filler
may cause a decrease in the resistance in a reliability test in
high-temperature high-humidity environment such as a HAST test. A
higher content of filler may also increase the temperature at which
an adhesive film for a semiconductor can be attached to a
semiconductor wafer. In view of the above situation, the content of
the filler is preferably less than 30% by mass, more preferably
less than 25% by mass, and further preferably less than 20% by mass
based on the total mass of the adhesive film for a
semiconductor.
[0065] It is preferred that the adhesive film 8 for a semiconductor
can be attached to the adherend semiconductor wafer at a
temperature of 100.degree. C. or lower. If the peel strength at the
interface between an adhesive film for a semiconductor and a
semiconductor wafer is 20 N/m or more when the adhesive film for a
semiconductor kept at a predetermined temperature is attached to
the semiconductor wafer, the adhesive film for a semiconductor is
considered to be attachable to the semiconductor wafer. The
adhesive film for a semiconductor is attached to a semiconductor
wafer using, for example, a hot roll laminator set at a temperature
of 100.degree. C. or lower. The peel strength is measured in an
atmosphere of 25.degree. C. at a tensile angle of 90.degree. and a
tensile rate of 50 mm/minute. An adhesive film for a semiconductor
which can be attached to a semiconductor wafer at 100.degree. C. or
lower can be prepared by, for example, reducing the content of the
filler or using a thermoplastic resin having a low Tg. The
temperature at which an adhesive film 8 for a semiconductor can be
attached to a semiconductor wafer is preferably 95.degree. C. or
lower, more preferably 90.degree. C. or lower. In consideration of
the heat resistance of the back grind tape, the adhesive film 8 for
a semiconductor can be attached to the adherend semiconductor wafer
at a temperature of preferably 80.degree. C. or lower.
[0066] The adhesive film 8 for a semiconductor preferably has heat
resistance and humidity resistance required when mounting a
semiconductor chip on a semiconductor chip mounting support member.
To this end, it is preferred that the adhesive film 8 for a
semiconductor has passed a reflow crack resistance test. The reflow
crack resistance of the adhesive film for a semiconductor can be
evaluated based on adhesion strength. To achieve good reflow crack
resistance, the peel strength when bonding an adhesive film for a
semiconductor to a semiconductor wafer at an adhesion area of
4.times.2 mm is preferably 1.0 kg/cm or more at an initial stage
and 0.5 kg/cm or more after allowing to stand in an atmosphere at
85.degree. C./85% for 48 hours. The initial peel strength is more
preferably 1.3 kg/cm or more, and further preferably 1.5 kg/cm. The
peel strength after allowing to stand in an atmosphere at
85.degree. C./85% for 48 hours is more preferably 0.7 kg/cm or
more, and further preferably 0.8 kg/cm or more.
[0067] The adhesive film 8 for a semiconductor may be prepared by a
method in which a coating solution containing a high molecular
weight component such as a thermoplastic resin, a thermosetting
component, a filler and an organic solvent in which they are
dissolved or dispersed is applied to a base film, and the organic
solvent is removed from the coating solution on the base film by
heating.
[0068] Organic solvents are not particularly limited as long as
materials can be homogeneously dissolved or dispersed in them.
Examples thereof include dimethylformamide, dimethylacetamide,
N-methylpyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl
ether, toluene, benzene, xylene, methyl ethyl ketone,
tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl
cellosolve, dioxane, cyclohexanone and ethyl acetate. These may be
used alone or in combination of two or more.
[0069] Base films are not particularly limited as long as they can
withstand heating for removing organic solvents. Examples of base
films include polyester films, polypropylene films, polyethylene
terephthalate films, polyimide films, polyetherimide films,
polyether naphthalate films and methyl pentene films. Multilayer
films composed of two or more of these films in combination may
also be used as a base film. The surface of the base film may be
treated with a silicone or silica release agent. After removing the
organic solvent, the base film may not be removed but used as a
support for an adhesive film for a semiconductor.
[0070] The adhesive film for a semiconductor may be preserved or
used in the form of a composite sheet with a dicing tape laminated
thereon. Using such a composite sheet makes it possible to simplify
the process of producing semiconductor devices.
[0071] The adhesive film for a semiconductor used in the method for
producing a semiconductor chip with an adhesive film of the present
invention may be those prepared as a die bonding film having the
following structure. [0072] (a) A die bonding film composed of a
base material and an adhesive layer containing a thermosetting
resin and/or a thermoplastic resin in that order. [0073] (b) A die
bonding film composed of a base material, a pressure-sensitive
adhesive layer and an adhesive layer containing a thermosetting
resin and/or a thermoplastic resin in that order. [0074] (c) A die
bonding film composed of a base material and a pressure-sensitive
adhesive/adhesive layer containing a thermosetting resin and/or a
thermoplastic resin in that order.
[0075] The adhesive layers of the die bonding films (a) and (b) and
the pressure-sensitive adhesive/adhesive layer of the die bonding
film (c) correspond to the adhesive film for a semiconductor
according to the present invention.
[0076] When using the die bonding film (a), a laminate according to
the present invention can be prepared by either of the following
methods.
[0077] (1) First, the adhesive layer of the above-described die
bonding film (a) and a semiconductor wafer are laminated. Secondly,
the base material of the die bonding film is peeled off. And then a
pressure-sensitive adhesive layer of a dicing tape material having
the pressure-sensitive adhesive layer and a base material in that
order is laminated on the adhesive layer.
[0078] (2) First, the adhesive layer of the above-described die
bonding film (a) and a pressure-sensitive adhesive layer of a
dicing tape material having the pressure-sensitive adhesive layer
and a base material in that order are laminated. And then the base
material of the die bonding film is peeled off and the adhesive
layer and a semiconductor wafer are laminated.
[0079] When using the die bonding film (b), a laminate according to
the present invention can be prepared by the following method.
[0080] (3) The adhesive layer of the above-described die bonding
film (b) and a semiconductor wafer are laminated. A laminate can be
prepared by this procedure when the base material and the
pressure-sensitive adhesive layer function as a dicing tape. A
laminate may also be prepared by laminating a dicing tape on the
pressure-sensitive adhesive layer after peeling off the base
material.
[0081] When using the die bonding film (c), a laminate according to
the present invention can be prepared by the following method.
[0082] (4) First, the pressure-sensitive adhesive/adhesive layer of
the above-described die bonding film (c) and a semiconductor wafer
are laminated. A laminate can be prepared by this procedure when
the base material functions as a dicing tape. A laminate may also
be prepared by laminating a dicing tape on the pressure-sensitive
adhesive layer after peeling off the base material.
[0083] As described in the example of using the above-described die
bonding film (c), the present invention can also provide a method
for producing a semiconductor chip with an adhesive film comprising
steps of: preparing a laminate in which at least a divided
semiconductor wafer comprising a plurality of semiconductor chips,
obtained by forming a cut which separates the semiconductor wafer
into a plurality of semiconductor chips on one side of the
semiconductor wafer in a thickness less than that of the
semiconductor wafer and by grinding the other side of the
semiconductor wafer on which no cut is formed to reach the cut, a
film-form pressure-sensitive adhesive/adhesive and a base material
are laminated, the film-form pressure-sensitive adhesive/adhesive
having a thickness in the range of 1 to 15 .mu.m and a tensile
elongation at break of less than 5%, and the tensile elongation at
break being less than 110% of the elongation at a maximum load; and
dividing the film-form pressure-sensitive adhesive/adhesive by
picking up the plurality of semiconductor chips in a laminating
direction of the laminate, thereby preparing a semiconductor chip
with an adhesive film. For the above-described base material, a
material which functions as a dicing tape may be used.
[0084] Although this embodiment has illustrated a case where the
adhesive film for a semiconductor according to the present
invention is disposed on the back side of a semiconductor wafer,
the method for producing a semiconductor chip with an adhesive film
of the present invention can also be applied to a process in which
an adhesive film for a semiconductor is attached to the circuit
side of a semiconductor wafer.
[0085] The semiconductor chip 30 with an adhesive film prepared by
the method according to this embodiment as described above
constitutes a semiconductor element such as an IC and an LSI. The
semiconductor chip 30 with an adhesive film is bonded to another
semiconductor chip or a semiconductor chip mounting support member
via the adhesive film 8a.
[0086] Examples of semiconductor chip mounting support members
include lead frames such as 42 alloy lead frames and copper lead
frames, a resin film composed of an epoxy resin, a polyimide resin
or a maleimide resin, substrates prepared by impregnating nonwoven
glass fabric or woven glass fabric with a thermosetting resin such
as an epoxy resin, a polyimide resin or a maleimide resin and
curing the resultant, and glass substrates and ceramic substrates
such as alumina.
[0087] FIG. 6 is a cross-sectional view illustrating an embodiment
of a semiconductor device prepared by the above method. A
semiconductor device 100 shown in FIG. 6 has a wiring board
(support member) 13 and the semiconductor chip 7a bonded to the
wiring board 13 via the adhesive film 8a. The semiconductor chip 7a
is connected to the wiring of the wiring board 13 by means of a
binding wire 14. The semiconductor chip 7a is sealed by a sealing
resin layer 15 in which the chips are embedded.
[0088] A semiconductor chip and a support member, or semiconductor
chips with each other, are bonded by heating at 60 to 300.degree.
C. for 0.1 to 300 seconds with an adhesive film for a semiconductor
interposed between the semiconductor chip and the support member or
between the semiconductor chips.
[0089] When the adhesive film 8 for a semiconductor contains a
thermosetting resin, the semiconductor chip after bonding is
preferably heated to facilitate adhesion of the adhesive film for a
semiconductor to an adherend or its curing, so as to increase the
strength of the bond. Heating conditions may be adjusted based on
the composition of the adhesive film, and the semiconductor chip is
heated generally at 60 to 220.degree. C. for 0.1 to 600 minutes.
When sealed with a resin, the heating in the step of curing the
sealing resin may be utilized.
EXAMPLES
[0090] In the following, the present invention will be described in
more detail by means of Examples. However, the present invention is
not limited thereto.
[0091] <Preparation of Adhesive Film for Semiconductor>
Example 1
[0092] A 500 ml four-neck flask equipped with a thermometer, a
stirrer and a calcium chloride drying tube was charged with
diamines, i.e., 1,3-bis(3-aminopropyl)tetramethyldisiloxane (0.06
mol) and 4,9-dioxadecane-1,12-diamine (0.04 mol), and 150 g of
N-methyl-2-pyrrolidone as a solvent, and the mixture was stirred at
60.degree. C. to dissolve diamines.
[0093] After dissolving diamines,
1,10-(decamethylene)bis(trimellitate dianhydride) (0.02 mol) and
4,4'-oxydiphthalic acid dianhydride (0.08 mol) were added thereto
in small portions and the mixture was allowed to react at
60.degree. C. for 3 hours. Then the mixture was heated at
170.degree. C. while blowing N.sub.2 gas thereinto to remove water
in the system with some of the solvent by azeotropic distillation
over 3 hours. A polyimide resin solution was prepared in this
way.
[0094] To an NMP solution of the polyimide resin prepared above
(containing 100 parts by mass of polyimide resin) were added 4
parts by mass of cresol novolac epoxy resin (available from Tohto
Kasei Co., Ltd.), 2 parts by mass of
4,4'-[1-[4-[1-(4-hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]
bisphenol (available from Honshu Chemical Industry Co., Ltd.) and
0.5 part by mass of tetraphenylphosphonium tetraphenylborate
(available from Tokyo Chemical Industry, Co., Ltd.). Further, 12%
by mass of a boron nitride filler (available from MIZUSHIMA
FERROALLOY CO., LTD.) and 3% by mass of Aerosil filler R972
(available from Nippon Aerosil Co., Ltd.) were added thereto based
on the total solid weight, and the mixture was sufficiently kneaded
to give a varnish.
[0095] The varnish prepared was applied to a release-treated
polyethylene terephthalate film (film A31 having a thickness of 50
.mu.m available from Teijin DuPont Films Japan Limited) and the
resultant was heated at 80.degree. C. for 30 minutes and then at
120.degree. C. for 30 minutes to give an adhesive film for a
semiconductor having a thickness of 5 .mu.m.
Example 2
[0096] A varnish prepared in the same manner as in Example 1 was
applied to a release-treated polyethylene terephthalate film (film
A31 having a thickness of 50 .mu.m available from Teijin DuPont
Films Japan Limited) and the resultant was heated at 80.degree. C.
for 30 minutes and then at 120.degree. C. for 30 minutes to give an
adhesive film for a semiconductor having a thickness of 15
.mu.m.
Comparative Example 1
[0097] A varnish prepared in the same manner as in Example 1 was
applied to a release-treated polyethylene terephthalate film (film
A31 having a thickness of 50 .mu.m available from Teijin DuPont
Films Japan Limited) and the resultant was heated at 80.degree. C.
for 30 minutes and then at 120.degree. C. for 30 minutes to give an
adhesive film for a semiconductor having a thickness of 25
.mu.m.
Comparative Example 2
[0098] DF-402 (available from Hitachi Chemical Co., Ltd., trade
name, thickness: 15 .mu.m) was prepared as an adhesive film for a
semiconductor of Comparative Example 2.
[0099] <Evaluation of Adhesive Film>
(Maximum Stress, Elongation at Maximum Load and Tensile Elongation
at Break)
[0100] A tensile test was performed using a strip test piece
(having a width of 5 mm and a length of 50 mm) cut from a B-stage
adhesive film. The maximum stress, elongation at the maximum load
and tensile elongation at break were calculated from the
stress-strain curve obtained based on the following calculation
formulas. The tensile test was performed using a tensile tester
(100N Autograph AGS-100NH made by Shimadzu Corporation) in an
atmosphere of 25.degree. C. under the conditions of a chuck
distance at the start of the test of 30 mm and a tensile rate of 5
mm/minute.
Maximum stress (Pa)=maximum load (N)/cross sectional area (m.sup.2)
of sample
Elongation at maximum load (%)={(chuck distance (mm) at maximum
load-30)/30}.times.100
Tensile elongation at break (%)={(chuck distance (mm) at
break-30)/30}.times.100
[0101] <Preparation of Semiconductor Chip with Adhesive
Film>
[0102] A 50 .mu.m-thick semiconductor wafer (material: single
crystalline silicon) was divided into semiconductor chips having a
thickness of 50 .mu.m and a size of 10 mm.times.10 mm by means of
the dicing-before-grinding shown in FIGS. 1 and 2.
[0103] At the same time, the adhesive films for a semiconductor
prepared in Examples and Comparative Examples were each cut out
into a circle having a diameter of 210 mm, and the resulting
adhesive films for a semiconductor were each laminated on a dicing
tape (available from DENKI KAGAKU KOGYO KABUSHIKI KAISHA, trade
name "AD-80H", thickness: 80 .mu.m) using a wafer mounter "DM-300H"
(made by JCM Co., Ltd., trade name) under the conditions of room
temperature, a linear pressure of 5 kgf and 10 mm/s to give a
laminated product of the adhesive film for a semiconductor and the
dicing tape. A wafer ring was also attached to the dicing tape of
the laminated product.
[0104] The above-described laminated product of the adhesive film
for a semiconductor and the dicing tape was attached to the back
side of the above-described divided semiconductor wafer which had
been subjected to dicing-before-grinding using a wafer mounter
"DM-300H" (made by JCM Co., Ltd., trade name) under the conditions
of a hot plate temperature of 80.degree. C., a linear pressure of 5
kgf and 3 mm/s to prepare a sample laminate.
[0105] The sample laminate prepared above was set on flexible die
bonder "DB-730" (made by Renesas Eastern Japan Semiconductor, Inc.,
trade name) and the dicing tape was expanded by the expanding
device. The rate of expansion was 10 mm/s and the amount of
expansion was 4 mm. Then, the semiconductor chips in the expanded
sample laminate were picked up using the multi-pin push-up jig of
flexible bonder "DB-730" (made by Renesas Eastern Japan
Semiconductor, Inc.) in which 9 ejector needles (made by
Micro-Mechanics Pte Ltd., SEN-83-05, needle diameter: 0.7 mm, tip:
semicircular, 350 .mu.m in diameter) are arranged in a grid pattern
at an interval of 4.2 mm while pushing up the needles and using a
rubber chip (made by Micro-Mechanics Pte Ltd., trade name:
13-087E-33, 10 mm.times.10 mm) as a pick-up collet. Here the
semiconductor chips were picked up while pushing up the needles in
two stages; they were pushed up under the conditions of a push-up
height of 300 .mu.m and a push-up rate of 89.4 mm/s in the first
stage, and under the conditions of a push-up height of 1,500 .mu.m
and a push-up rate of 8.94 mm/s in the second stage for a holding
time after pushing up (pick-up time) of 500 ms. Pick-up properties
in this experiment were evaluated based on the following
criteria.
[Pick-Up Properties]
[0106] A: The adhesive film for a semiconductor could be cut and
the semiconductor chips with an adhesive film were successfully
picked up. [0107] B: The adhesive film for a semiconductor could
not be completely cut, making it impossible to pick up the
semiconductor chips and causing chip cracks.
TABLE-US-00001 [0107] TABLE 1 Compar- Compar- ative ative Exam-
Exam- Exam- Exam- Unit ple 1 ple 2 ple 1 ple 2 Tensile Maximum MPa
45.9 45.9 45.9 60.0 prop- stress erties Elongation % 2.5 2.5 2.5
3.9 at maximum load Tensile % 2.5 2.5 2.5 10.3 elongation at break
Tensile % 101 101 101 264 elongation at break/ elongation at
maximum load Film thickness .mu.m 5 15 25 15 Pick-up properties --
A A B B
[0108] As Table 1 shows, it has been proved that when using the
adhesive films for a semiconductor of Examples 1 and 2 having a
thickness in the range of 1 to 15 .mu.m and a tensile elongation at
break of less than 5%, and in which the tensile elongation at break
is less than 110% of the elongation at the maximum load, the
adhesive films for a semiconductor could be divided in the
above-described pick-up step, making it possible to prepare
semiconductor chips with an adhesive film. It has also been found
that flash in the divided adhesive films was sufficiently reduced
and the divided adhesive films had substantially the same shape as
that of the semiconductor chip. On the other hand, when the
adhesive films for a semiconductor of Comparative Examples 1 and 2
were used, the adhesive films for a semiconductor could not be
divided in the above-described expansion step or pick-up step.
[0109] The above results have proved that the method for producing
a semiconductor chip with an adhesive film using an adhesive film
for a semiconductor of the present invention is capable of
producing a semiconductor chip with an adhesive film laminated
thereon in which flash is sufficiently little and which has
substantially the same shape as that of the semiconductor chip, and
capable of achieving both assembling properties and reliability in
a method of producing a semiconductor device based on a
dicing-before-grinding process.
INDUSTRIAL APPLICABILITY
[0110] The present invention can provide a method for producing a
semiconductor chip with an adhesive film, capable of producing a
semiconductor chip from a semiconductor wafer at a good yield and
capable of producing a semiconductor chip with an adhesive film
laminated thereon in which flash is sufficiently little and which
has substantially the same shape as that of the semiconductor chip,
an adhesive film for a semiconductor suitably used in the method
for producing a semiconductor chip with an adhesive film and a
method for producing a semiconductor device capable of achieving
both assembling properties and reliability.
* * * * *