U.S. patent application number 13/443113 was filed with the patent office on 2012-08-02 for acoustic resonator structure comprising a bridge.
This patent application is currently assigned to Avago Technologies Wireless IP (Singapore) Pte. Ltd.. Invention is credited to John CHOY, Chris FENG, Phil NIKKEL.
Application Number | 20120194297 13/443113 |
Document ID | / |
Family ID | 43218113 |
Filed Date | 2012-08-02 |
United States Patent
Application |
20120194297 |
Kind Code |
A1 |
CHOY; John ; et al. |
August 2, 2012 |
ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE
Abstract
An acoustic resonator comprises a first electrode a second
electrode and a piezoelectric layer disposed between the first and
second electrodes. The acoustic resonator further comprises a
reflective element disposed beneath the first electrode, the second
electrode and the piezoelectric layer. An overlap of the reflective
element, the first electrode, the second electrode and the
piezoelectric layer comprises an active area of the acoustic
resonator. The acoustic resonator also comprises a bridge adjacent
to a termination of the active area of the acoustic resonator.
Inventors: |
CHOY; John; (Westminster,
CO) ; FENG; Chris; (Fort Collins, CO) ;
NIKKEL; Phil; (Loveland, CO) |
Assignee: |
Avago Technologies Wireless IP
(Singapore) Pte. Ltd.
Singapore
SG
|
Family ID: |
43218113 |
Appl. No.: |
13/443113 |
Filed: |
April 10, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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12490525 |
Jun 24, 2009 |
|
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13443113 |
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Current U.S.
Class: |
333/187 ;
310/365 |
Current CPC
Class: |
H03H 9/02149 20130101;
H03H 9/173 20130101; H03H 9/02118 20130101; H03H 9/132
20130101 |
Class at
Publication: |
333/187 ;
310/365 |
International
Class: |
H03H 9/15 20060101
H03H009/15; H01L 41/04 20060101 H01L041/04 |
Claims
1. An acoustic resonator, comprising: a first electrode; a second
electrode; a piezoelectric layer disposed between the first and
second electrodes; a reflective element disposed beneath the first
electrode, the second electrode and the piezoelectric layer, an
overlap of the reflective element, the first electrode, the second
electrode and the piezoelectric layer defining an active area of
the acoustic resonator, wherein the first electrode substantially
covers the reflective element, and the piezoelectric layer extends
over an edge of the first electrode; and a bridge adjacent to a
termination of the active area of the acoustic resonator, wherein
the bridge overlaps a portion of the first electrode.
2. An acoustic resonator as claimed in claim 1, further comprising
an electrical connection to one of a plurality of sides of the
second electrode, wherein the bridge is disposed between the
connection and the one side of the second electrode.
3. An acoustic resonator as claimed in claim 1, wherein adjacent to
termination of the active area of the acoustic resonator, the
piezoelectric layer comprises a transition comprising defects.
4. An acoustic resonator as claimed in claim 3, wherein the second
electrode does not contact the transition.
5. An acoustic resonator as claimed in claim 1, wherein the bridge
comprises a gap.
6. An acoustic resonator as claimed in claim 5, wherein the gap
comprises a region between the second electrode and the
piezoelectric layer.
7. An acoustic resonator as claimed in claim 6, wherein adjacent to
termination of the active area of the acoustic resonator, the
piezoelectric layer comprises a transition comprising defects, and
the transition is disposed beneath the region of the gap.
8. An acoustic resonator as claimed in claim 1, wherein the second
electrode comprises an upper surface with a side and a recess is
disposed along the side.
9. An acoustic resonator as claimed in claim 1, wherein the second
electrode comprises an upper surface with a side, and a frame
element is disposed along the side.
10. A film bulk acoustic resonator (FBAR), comprising: a first
electrode; a second electrode; a piezoelectric layer disposed
between the first and second electrodes; a cavity disposed beneath
the first electrode, the second electrode and the piezoelectric
layer, an overlap of the cavity, the first electrode, the second
electrode and the piezoelectric layer defining an active area of
the acoustic resonator, wherein the first electrode substantially
covers the cavity, and the piezoelectric layer extends over an edge
of the first electrode; and a bridge adjacent to a termination of
the active area of the acoustic resonator, wherein the bridge
overlaps a portion of the first electrode.
11. An FBAR as claimed in claim 10, further comprising an
electrical connection to one of a plurality of sides of the second
electrode, wherein the bridge is disposed between the connection
and the one side of the second electrode.
12. An FBAR as claimed in claim 10, wherein adjacent to termination
of the active area of the acoustic resonator, the piezoelectric
layer comprises a transition comprising defects.
13. An FBAR as claimed in claim 12, wherein the second electrode
does not contact the transition.
14. An FBAR as claimed in claim 10, wherein the bridge comprises a
gap.
15. An FBAR as claimed in claim 14, wherein the gap comprises a
region between the second electrode and the piezoelectric
layer.
16. An FBAR as claimed in claim 15, wherein adjacent to termination
of the active area of the acoustic resonator, the piezoelectric
layer comprises a transition comprising defects, and the transition
is disposed beneath the region of the gap.
17. An FBAR as claimed in claim 10, wherein the second electrode
comprises an upper surface with a side and a recess is disposed
along the side.
18. An FBAR as claimed in claim 10, wherein the second electrode
comprises an upper surface with a side, and a frame element is
disposed along the side.
19. An FBAR as claimed in claim 20, further comprising a low
acoustic impedance material beneath the bridge.
20. A filter element comprising an acoustic resonator, the acoustic
resonator comprising: a first electrode; a second electrode; a
piezoelectric layer disposed between the first and second
electrodes; a reflective element disposed beneath the first
electrode, the second electrode and the piezoelectric layer, an
overlap of the reflective element, the first electrode, the second
electrode and the piezoelectric layer defining an active area of
the acoustic resonator, wherein the first electrode substantially
covers the reflective element, and the piezoelectric layer extends
over an edge of the first electrode; and a bridge adjacent to a
termination of the active area of the acoustic resonator, wherein
the bridge overlaps a portion of the first electrode.
21. An acoustic wave resonator, comprising: (a) a substrate; (b) an
acoustic mirror formed in or on the substrate, having a first edge
and an opposite, second edge; (c) a dielectric layer formed on the
substrate such that the dielectric layer is substantially in
contact with the first and second edges of the acoustic mirror; (d)
a first electrode formed on the acoustic mirror, having a first end
portion and an opposite, second end portion defining a body portion
therebetween, wherein at least one of the first and second end
portions is formed extending to the dielectric layer; (e) a
piezoelectric layer formed on the first electrode, having a body
portion, a first end portion and a second end portion oppositely
extending from the body portion onto the dielectric layer; and (f)
a second electrode formed on the piezoelectric layer, having a
first portion situated on the body portion of the piezoelectric
layer, and a second portion extending from the first portion such
that the junction of the first portion and the second portion
locates between the first and second edges of the acoustic mirror
and the second portion of the second electrode and the first end
portion of the piezoelectric layer define an air gap
therebetween.
22. The acoustic wave resonator of claim 21, wherein the air gap is
filled with a dielectric material.
23. The acoustic wave resonator of claim 22, wherein the dielectric
material comprises carbon (C) doped silicon dioxide (SiO.sub.2),
crosslinked polyphenylene polymer (SiLK), or benzocyclobutene
(BCB).
24. The acoustic wave resonator of claim 21, wherein the second
portion of the second electrode comprises a convex bridge.
25. The acoustic wave resonator of claim 21, wherein the first and
second end portions of first electrode are formed to have a
vertical profile.
26. The acoustic wave resonator of claim 21, Wherein the first end
portion of the first electrode extends beyond the first edge of the
acoustic mirror and is situated on the dielectric layer.
27. The acoustic wave resonator of claim 26, wherein the first edge
of the acoustic mirror and the junction of the first portion and
the second portion of the second electrode define a first distance,
d.sub.1.
28. The acoustic wave resonator of claim 27, wherein the junction
of the body portion and the first end portion of the first
electrode and the junction of the first portion and the second
portion of the second electrode define a second distance,
d.sub.2.
29. An acoustic wave resonator, comprising: (a) a substrate having
a top surface; (b) an acoustic mirror formed on the top surface of
the substrate or in the substrate, having a first edge and an
opposite, second edge; (c) a first electrode formed on the acoustic
mirror, having a end portion; (d) a piezoelectric layer formed on
the first electrode; and (e) a second electrode formed on the
piezoelectric layer, wherein at least one of the first electrode
and the second electrode and the piezoelectric layer define an air
gap in a region that overlaps the end portion of the first
electrode.
30. The acoustic wave resonator of claim 29, further comprising a
dielectric layer formed on the substrate such that the dielectric
layer is substantially in contact with the first and second edges
of the acoustic mirror.
31. The acoustic wave resonator of claim 29, wherein the air gap is
filled with a dielectric material.
32. The acoustic wave resonator of claim 31, wherein the dielectric
material comprises carbon (C) doped silicon dioxide (SiO.sub.2),
crosslinked polyphenylene polymer (SiLK), or benzocyclobutene
(BCB).
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application is a continuation application under
37 C.F.R. .sctn.1.53(b) of U.S. patent application Ser. No.
12/490,525 filed on Jun. 25, 2009, naming John Choy, et al. as
inventors. Priority under 35 U.S.C. .sctn.120 is claimed from U.S.
patent application Ser. No. 12/490,525, and the entire disclosure
of U.S. patent application Ser. No. 12/490,525 is specifically
incorporated herein by reference.
BACKGROUND
[0002] In many electronic applications, electrical resonators are
used. For example, in many wireless communications devices, radio
frequency (rf) and microwave frequency resonators are used as
filters to improve reception and transmission of signals. Filters
typically include inductors and capacitors, and more recently,
resonators.
[0003] As will be appreciated, it is desirable to reduce the size
of components of electronic devices. Many known filter technologies
present a barrier to overall system miniaturization. With the need
to reduce component size, a class of resonators based on the
piezoelectric effect has emerged. In piezoelectric-based
resonators, acoustic resonant modes are generated in the
piezoelectric material. These acoustic waves are converted into
electrical waves for use in electrical applications.
[0004] One type of piezoelectric resonator is a Film Bulk Acoustic
Resonator (FBAR). The FBAR has the advantage of small size and
lends itself to Integrated Circuit (IC) manufacturing tools and
techniques. The FBAR includes an acoustic stack comprising, inter
alia, a layer of piezoelectric material disposed between two
electrodes. Acoustic waves achieve resonance across the acoustic
stack, with the resonant frequency of the waves being determined by
the materials in the acoustic stack.
[0005] FBARs are similar in principle to bulk acoustic resonators
such as quartz, but are scaled down to resonate at GHz frequencies.
Because the FBARs have thicknesses on the order of microns and
length and width dimensions of hundreds of microns, FBARs
beneficially provide a comparatively compact alternative to known
resonators.
[0006] Desirably, the bulk acoustic resonator excites only
thickness-extensional (TE) modes, which are longitudinal mechanical
waves having propagation (k) vectors in the direction of
propagation. The TE modes desirably travel in the direction of the
thickness e.g., z-direction) of the piezoelectric layer.
[0007] Unfortunately, besides the desired TE modes there are
lateral modes, known as Rayleigh-Lamb modes, generated in the
acoustic stack as well. The Rayleigh-Lamb modes are mechanical
waves having k-vectors that are perpendicular to the direction of
TE modes, the desired modes of operation. These lateral modes
travel in the areal dimensions (x, y directions of the present
example) of the piezoelectric material. Among other adverse
effects, lateral modes deleteriously impact the quality (Q) factor
of an FBAR device. In particular, the energy of Rayleigh-Lamb modes
is lost at the interfaces of the FBAR device. As will be
appreciated, this loss of energy to spurious modes is a loss in
energy of desired longitudinal modes, and ultimately a degradation
of the Q-factor.
[0008] FBARs comprise an active area, and connections to and from
the active area can increase losses, and thereby degrade the Q
factor. For example, in transition regions between the active area
and the connections, defects may form in the piezoelectric layer
during fabrication. These defects can result in acoustic loss, and
as a result, a reduction in the Q factor.
[0009] What is needed, therefore, are an acoustic resonator
structure and electrical filter that overcomes at least the known
shortcomings described above.
SUMMARY
[0010] In accordance with a representative embodiment, an acoustic
resonator comprises: a first electrode; a second electrode; a
piezoelectric layer disposed between the first and second
electrodes; and a reflective element disposed beneath the first
electrode, the second electrode and the piezoelectric layer. An
overlap of the reflective element, the first electrode, the second
electrode and the piezoelectric layer defines an active area of the
acoustic resonator. The first electrode substantially covers the
reflective element, and the piezoelectric layer extends over an
edge of the first electrode. The acoustic resonator also comprises
a bridge adjacent to a termination of the active area of the
acoustic resonator, and the bridge overlaps a portion of the first
electrode.
[0011] In accordance with another representative embodiment, a film
bulk acoustic resonator (FBAR) comprises: a first electrode; a
second electrode; a piezoelectric layer disposed between the first
and second electrodes; and a cavity disposed beneath the first
electrode, the second electrode and the piezoelectric layer. An
overlap of the cavity, the first electrode, the second electrode
and the piezoelectric layer defines an active area of the acoustic
resonator. The first electrode substantially covers the cavity, and
the piezoelectric layer extends over an edge of the first
electrode. The FBAR also comprises a bridge adjacent to a
termination of the active area of the acoustic resonator. The
bridge overlaps a portion of the first electrode.
[0012] In accordance with yet another representative embodiment, a
filter element comprises an acoustic resonator. The acoustic
resonator comprises: a first electrode; a second electrode; a
piezoelectric layer disposed between the first and second
electrodes; and a reflective element disposed beneath the first
electrode, the second electrode and the piezoelectric layer. An
overlap of the reflective element, the first electrode, the second
electrode and the piezoelectric layer defines an active area of the
acoustic resonator. The first electrode substantially covers the
reflective element, and the piezoelectric layer extends over an
edge of the first electrode. The acoustic resonator also comprises
a bridge adjacent to a termination of the active area of the
acoustic resonator, and the bridge overlaps a portion of the first
electrode.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The illustrative embodiments are best understood from the
following detailed description when read with the accompanying
drawing figures. It is emphasized that the various features are not
necessarily drawn to scale. In fact, the dimensions may be
arbitrarily increased or decreased for clarity of discussion.
Wherever applicable and practical, like reference numerals refer to
like elements.
[0014] FIG. 1 shows a cross-sectional view of an acoustic resonator
in accordance with a representative embodiment.
[0015] FIG. 2 shows a top view of an acoustic resonator in
accordance with a representative embodiment.
[0016] FIG. 3 shows a graph of the Q-factor versus a spacing
between the air-bridge and the lower electrode of an FBAR in
accordance with a representative embodiment.
[0017] FIG. 4 shows a graph of the effective coupling coefficient
(kt.sup.2) versus a spacing between the air-bridge and the lower
electrode of an acoustic resonator in accordance with a
representative embodiment.
[0018] FIG. 5 shows a cross-sectional view of an FBAR in accordance
with a representative embodiment.
[0019] FIG. 6 shows a graph of the parallel impedance (Rp) for
FBARs, including certain FBARs of representative embodiments.
[0020] FIG. 7 shows a graph of the effective coupling coefficient
(kt.sup.2) for FBARs, including certain FBARs of representative
embodiments.
DEFINED TERMINOLOGY
[0021] It is to be understood that the terminology used herein is
for purposes of describing particular embodiments only, and is not
intended to be limiting. The defined terms are in addition to the
technical and scientific meanings of the defined terms as commonly
understood and accepted in the technical field of the present
teachings.
[0022] As used in the specification and appended claims, the terms
`a`, `an` and `the` include both singular and plural referents,
unless the context clearly dictates otherwise. Thus, for example,
`a device` includes one device and plural devices.
[0023] As used in the specification and appended claims, and in
addition to their ordinary meanings, the terms `substantial` or
`substantially` mean to within acceptable limits or degree. For
example, `substantially cancelled` means that one skilled in the
art would consider the cancellation to be acceptable.
[0024] As used in the specification and the appended claims and in
addition to its ordinary meaning, the term `approximately` means to
within an acceptable limit or amount to one having ordinary skill
in the art. For example, `approximately the same` means that one of
ordinary skill in the art would consider the items being compared
to be the same.
DETAILED DESCRIPTION
[0025] In the following detailed description, for purposes of
explanation and not limitation, specific details are set forth in
order to provide a thorough understanding of illustrative
embodiments according to the present teachings. However, it will be
apparent to one having ordinary skill in the art having had the
benefit of the present disclosure that other embodiments according
to the present teachings that depart from the specific details
disclosed herein remain within the scope of the appended claims.
Moreover, descriptions of well-known apparati and methods may be
omitted so as to not obscure the description of the illustrative
embodiments. Such methods and apparati are clearly within the scope
of the present teachings.
[0026] FIG. 1 is a cross-sectional view of an acoustic resonator
100 in accordance with an illustrative embodiment. Illustratively,
the acoustic resonator 100 is an FBAR structure. The acoustic
resonator 100 comprises a substrate 101. A first electrode 102 is
disposed over the substrate 101. A piezoelectric layer 103 is
disposed over the first electrode 102. A second electrode 104 is
disposed over the first electrode 102. The piezoelectric layer 103
has a first surface in contact with the first electrode 102 and a
second surface in contact with the second electrode 104. The first
and second electrodes 102, 104 include an electrically conductive
material and provide an oscillating electric field in the
y-direction, which is the direction of the thickness of the
piezoelectric layer 103. In the present illustrative embodiment,
the y-axis is the axis for the TE (longitudinal) mode(s) for the
resonator.
[0027] The piezoelectric layer 103 and first and second electrodes
102, 104 are suspended over a cavity 105 formed by selective
etching of the substrate 101. The cavity 105 may be formed by a
number of known methods, for example as described in commonly
assigned U.S. Pat. No. 6,384,697 to Ruby, et al. The region of
overlap of the first and second electrodes 102, 104, the
piezoelectric layer 103 and the cavity 105 is referred to as the
active area of the acoustic resonator 100. Accordingly, the
acoustic resonator 100 is a mechanical resonator, which can be
electrically coupled via the piezoelectric layer 103. Other
suspension schemes that foster mechanical resonance by FBARs are
contemplated. For example, the acoustic resonator 100 can be
located over a mismatched acoustic Bragg reflector (not shown)
formed in or on the substrate 101. This type of FBAR is sometimes
referred to as a solid mount resonator (SMR) and, for example, may
be as described in U.S. Pat. No. 6,107,721 to Lakin, the disclosure
of which is specifically incorporated into this disclosure by
reference in its entirety.
[0028] By contrast, an inactive area of the acoustic resonator 100
comprises a region of overlap between first electrode 102, or
second electrode 104, or both, and the piezoelectric layer 103 not
disposed over the cavity 105 or other suspension structure. As
described more fully below, it is beneficial to the performance of
the resonator to reduce the area of the inactive region of the
acoustic resonator 100 to the extent practical.
[0029] When connected in a selected topology, a plurality of
acoustic resonators 100 can act as an electrical filter. For
example, the acoustic resonators 100 may be arranged in a
ladder-filter arrangement, such as described in U.S. Pat. No.
5,910,756 to Ella, and U.S. Pat. No. 6,262,637 to Bradley, et al.
The electrical filters may be used in a number of applications,
such as in duplexers.
[0030] The acoustic resonator 100 may be fabricated according to
known semiconductor processing methods and using known materials.
Illustratively, the acoustic resonator 100 may be fabricated
according to the teachings of U.S. Pat. Nos. 5,587,620; 5,873,153;
6,384,697; 6,507,983; and 7,275,292 to Ruby, et al.; and 6,828,713
to Bradley, et. al. The disclosures of these patents are
specifically incorporated herein by reference. It is emphasized
that the methods and materials described in these patents are
representative and other methods of fabrication and materials
within the purview of one of ordinary skill in the art are
contemplated.
[0031] The acoustic resonator 100 also comprises a bridge 106
provided on a side of the acoustic resonator 100 that connects to a
contact 107. The contact 107 is connected to a signal line (not
shown) and electronic components (not shown) are selected for the
particular application of the acoustic resonator 100. This portion
of the acoustic resonator 100 is often referred to as the
interconnection side of the acoustic resonator 100. By contrast,
the second electrode 104 terminates at a position 108 over the
cavity 105 in order to minimize the inactive area of the acoustic
resonator 100 as described below. The position 108 opposes the
interconnection side of the acoustic resonator 100.
[0032] The bridge 106 comprises a gap 109 formed beneath a portion
of the second electrode 104. Illustratively, and as described
below, after removal of a sacrificial layer (not shown) provided in
the formation of the gap 109, the gap 109 comprises air. However,
the gap 109 may comprise other materials including low acoustic
impedance materials, such as carbon (C) doped SiO.sub.2, which is
also referred as Black-diamond; or dielectric resin commercially
known as SiLK; or benzocyclobutene (BCB). Such low acoustic
impedance materials may be provided in the gap 109 by known
methods. The low acoustic impedance material may be provided after
removal of sacrificial material used to form the gap 109 (as
described below), or may be used instead of the sacrificial
material in the gap 109, and not removed.
[0033] In a representative embodiment, the bridge 106 is formed by
providing a sacrificial layer (not shown) over the first electrode
102 and a portion of the piezoelectric layer 103 on the
interconnection side and forming the second electrode 104 over the
sacrificial layer. Illustratively, the sacrificial material
comprises phosphosilicate glass (PSG), which illustratively
comprises 8% phosphorous and 92% silicon dioxide. Subsequent layers
such as the piezoelectric layer 103 and the second electrode 104
are deposited, sequentially, upon the PSG until the final structure
is developed. Notably a seed layer (not shown) may be provided over
the first electrode 102 before depositing the piezoelectric layer
103, and a passivation layer (not shown) may be deposited over the
second electrode 104. After the formation of the structure
comprising the bridge 106, the PSG sacrificial layer is etched away
illustratively with hydrofluoric acid leaving the free-standing
bridge 106. In a representative embodiment, the sacrificial layer
disposed in the cavity 105 and the sacrificial layer beneath the
bridge 106 are removed in the same process step, with the latter
leaving the gap 109 comprising air.
[0034] The piezoelectric layer 103 comprises a transition 110
formed during the formation of the piezoelectric layer 103 over the
first electrode 102 and the substrate 101. The piezoelectric layer
103 at the transition 110 often comprises material defects and
voids, particularly structural defects such as lattice defects and
voids. These defects and voids can result in losses of acoustic
energy of the mechanical waves propagating in the piezoelectric
material. As should be appreciated, acoustic energy loss results in
a reduction in the Q-factor of the acoustic resonator 100. However,
and as described below, by separating the second electrode 104 from
the piezoelectric layer 103 in a region 111 of the gap 109 where
the transition 110 occurs, the portion of the active region of the
acoustic resonator 100 necessarily does not include the transition
110 of the piezoelectric layer 103 that includes the defects and
voids therein. As a result, acoustic losses due to the defects and
voids in the piezoelectric layer 103 at the transition 110 are
reduced and the Q-factor is improved compared to known resonators,
such as known FBARs.
[0035] Additionally, and beneficially, the bridge 106 provides an
acoustic impedance mismatch at the boundary of the active region on
the interconnection side of the acoustic resonator 100. This
acoustic impedance mismatch results in the reflection of acoustic
waves at the boundary that may otherwise propagate out of the
active region and be lost, resulting in energy loss. By preventing
such losses, the bridge 106 results in an increased Q-factor in the
acoustic resonator 100. Moreover, the termination of the second
electrode 104 at position 108 terminates the active region of the
acoustic resonator 100 and reduces losses by creating an acoustic
impedance mismatch. This also provides an improvement in the
Q-factor.
[0036] In addition to terminating the active region of the acoustic
resonator 100 before the transition 110, the bridge 106 also
reduces the area of an inactive region of the acoustic resonator
100. The inactive region of the FBAR 100 creates a parasitic
capacitance, which in an equivalent circuit is electrically in
parallel with the intrinsic capacitance of the active region of the
FBAR. This parasitic capacitance degrades the effective coupling
coefficient (kt.sup.2), and therefore it is beneficial to reduce
the parasitic capacitance. Reducing the area of the inactive region
reduces the parasitic capacitance, and thereby improves the
effective coupling coefficient (kt.sup.2).
[0037] FIG. 1 also shows a first line 112 and a second line 113
separated by a distance `d.` The distance `d` represents the
distance between the edge of the first electrode 102 at the first
line 112 (arbitrarily selected as x=0 for this discussion) to the
beginning point of the bridge 106 at the second line 113. As the
position of the second line 113 becomes larger (more negative), the
Q-factor increases. The effective coupling coefficient (kt.sup.2)
also increases with separation of first and second lines 112, 113
to an extent. Thus, the selection of a particular distance `d`
results in an improvement in Q due to reduced acoustic losses due
to the reduction in the inactive FBAR area and the improvement in
kt.sup.2 from the reduction of the parasitic capacitance.
[0038] FIG. 2 shows a top view of the acoustic resonator 100 of
FIG. 1. Notably, the cross-sectional view of the acoustic resonator
100 shown in FIG. 1 is taken along the line 1-1. The second
electrode 104 of the present embodiment is apodized to reduce
acoustic losses. Further details of the use of apodization in
acoustic resonators may be found in commonly owned U.S. Pat. No.
6,215,375 to Larson III, et al; or in commonly owned U.S. Pat. No.
7,629,865 entitled "Piezoelectric Resonator Structures and
Electrical Filters" filed May 31, 2006, to Richard C. Ruby. The
disclosures of U.S. Pat. Nos. 6,215,375 and 7,629,865 are
specifically incorporated herein by reference in their
entirety.
[0039] The fundamental mode of the acoustic resonator 100 is the
longitudinal extension mode or "piston" mode. This mode is excited
by the application of a time-varying voltage to the two electrodes
at the resonant frequency of the acoustic resonator 100. The
piezoelectric material converts energy in the form of electrical
energy into mechanical energy. In an ideal FBAR having
infinitesimally thin electrodes, resonance occurs when the applied
frequency is equal to the velocity of sound of the piezoelectric
medium divided by twice the thickness of the piezoelectric medium:
f=v.sub.ac/(2*T), where T is the thickness of the piezoelectric
medium and v.sub.ac is the acoustic phase velocity. For resonators
with finite thickness electrodes, this equation is modified by the
weighted acoustic velocities and thicknesses of the electrodes.
[0040] A quantitative and qualitative understanding of the Q of a
resonator may be obtained by plotting on a Smith Chart the ratio of
the reflected energy to applied energy as the frequency is varied
for the case in which one electrode is connected to ground and
another to signal, for an FBAR resonator with an impedance equal to
the system impedance at the resonant frequency. As the frequency of
the applied energy is increased, the magnitude/phase of the FBAR
resonator sweeps out a circle on the Smith Chart. This is referred
to as the Q-circle. Where the Q-circle first crosses the real axes
(horizontal axes), this corresponds to the series resonance
frequency f.sub.s. The real impedance (as measured in Ohms) is
R.sub.s. As the Q-circle continues around the perimeter of the
Smith chart, it again crosses the real axes. The second point at
which the Q circle crosses the real axis is labeled f.sub.p, the
parallel or anti-resonant frequency of the FBAR. The real impedance
at f.sub.p is R.sub.p.
[0041] Often it is desirable to minimize R.sub.s while maximizing
R.sub.p. Qualitatively, the closer the Q-circle "hugs" the outer
rim of the Smith chart, the higher the Q-factor of the device. The
Q-circle of an ideal lossless resonator would have a radius of one
and would be at the edge of the Smith chart. However, as noted
above, there are energy losses that impact the Q of the device. For
instance, and in addition to the sources of acoustic losses
mentioned above, Rayleigh-Lamb (lateral or spurious) modes are in
the x,y dimensions of the piezoelectric layer 103. These lateral
modes are due to interfacial mode conversion of the longitudinal
mode traveling in the z-direction; and due to the creation of
non-zero propagation vectors, k.sub.x and k.sub.y for both the TE
mode and the various lateral modes (e.g., the S0 mode and the
zeroth and first flexure modes, A0 and A1), which are due to the
difference in effective velocities between the regions where
electrodes are disposed and the surrounding regions of the
resonator where there are no electrodes.
[0042] Regardless of their source, the lateral modes are parasitic
in many resonator applications. For example, the parasitic lateral
modes couple at the interfaces of the resonator and remove energy
available for the longitudinal modes and thereby reduce the
Q-factor of the resonator device. Notably, as a result of parasitic
lateral modes and other acoustic losses sharp reductions in Q can
be observed on a Q-circle of the Smith Chart of the S.sub.11
parameter. These sharp reductions in Q-factor are known as
"rattles" or "loop-de-loops," which are shown and described in
commonly owned U.S. Pat. No. 7,280,007, referenced below.
[0043] As described more fully in U.S. Pat. Nos. 6,215,375 and
7,629,865, the apodized first and second electrodes 102, 104 cause
reflections of the lateral modes at the interfaces of the resonator
to interfere non-constructively, and therefore reduce the magnitude
of lateral modes which otherwise result in more viscous energy
dissipation. Beneficially, because these lateral modes are not
coupled out of the resonator and developed to higher magnitude,
energy loss can be mitigated with at least a portion of the
reflected lateral modes being converted to longitudinal modes
through mode conversion. Ultimately, this results in an overall
improvement in the Q-factor.
[0044] FIG. 3 shows a graph of the Q-factor versus a spacing (`d`
in FIG. 1) between the bridge 106 and the first electrode 102 of
acoustic resonator 100 in accordance with a representative
embodiment. When the spacing `d` is selected to be zero, second
line 113 is aligned with first line 112, and the region 111 is
eliminated. When the spacing `d` is selected to be positive, the
second line 113 now has a positive x-coordinate (i.e., second line
113 is located to the right of first line 112 in FIG. 1). In either
case, the acoustic losses due to defects in the transition 110 and
a comparative increase in the area of the inactive region of the
acoustic resonator 100 combine to result in a Q-factor that is
comparatively low. By contrast, when the spacing d is selected to
be `negative` the inactive area is decreased (i.e., second line 113
is located to the left of first line 112 in FIG. 1), with the
bridge 106 and region 111 comprising a comparatively increased
dimension. As can be seen in region 302 of FIG. 3, the Q-factor
increases to a maximum value at 303. As should be appreciated, the
reduction in the inactive area of the acoustic resonator 100 on the
interconnection side of the acoustic resonator 100, and the forming
of the region 111 results in a decrease in losses due to defects
and an acoustic impedance mismatch at the boundary of the active
region of the acoustic resonator 100 at the interconnection side of
the acoustic resonator 100.
[0045] FIG. 4 shows a graph of the effective coupling coefficient
(kt.sup.2) versus a spacing (`d` in FIG. 1) between the air-bridge
(e.g., 106) and the lower electrode (e.g., 102) of an acoustic
resonator 100 in accordance with a representative embodiment. When
the spacing is selected to be zero, second line 113 is aligned with
first line 112 and the region 111 is eliminated. When the spacing
`d` is selected to be positive, the second line 113 now has a
positive x-coordinate (i.e., second line 113 is to the right of
first line 112 in FIG. 1). In either case, the area of the inactive
region results in an increase in the parasitic capacitance. This
increased parasitic capacitance provides a comparatively reduced
effective coupling coefficient (kt.sup.2) as shown in region 401 of
FIG. 4. By contrast, when the spacing d is selected to be
`negative` (i.e., second line 113 is to the left of first line 112
in FIG. 1) the inactive area is decreased, with the bridge 106 and
region 111 increasing in dimension. This results in a reduction in
the parasitic capacitance, and a comparative increase in the
effective coupling coefficient (kt.sup.2) as shown in region 402 of
FIG. 4. A maximum value of the effective coupling coefficient
(kt.sup.2) is reached at 403 in FIG. 4. In region 404 of FIG. 4,
the effective coupling coefficient (kt.sup.2) begins to drop.
Likely, this is due to the fact that region 111 further increases
over cavity 105, resulting in an increase in the area of the
parasitic capacitor formed by the bridge 106 and the gap 109, thus
increasing the parasitic capacitance in parallel with the intrinsic
capacitance of the acoustic resonator 100. Moreover, as region 111
increases within cavity 105, the active resonator area also
decreases, resulting in a decrease in kt.sup.2. Accordingly, in
region 404, the effective coupling coefficient (kt.sup.2) decreases
as region 111 increases. As should be appreciated from the
discussion of FIGS. 3 and 4, the selection of the distance `d` in
FIG. 1 allows for the selection of an acceptable increase in both
the Q-factor and the effective coupling coefficient (kt.sup.2).
[0046] FIG. 5 is a cross-sectional view of an acoustic resonator
500 in accordance with an illustrative embodiment. The acoustic
resonator 500, which is illustratively an FBAR, shares many common
features with the acoustic resonator 100 described previously. Many
of these common details are not repeated in order to avoid
obscuring the presently described embodiments.
[0047] The acoustic resonator 500 comprises a selective recess 501
(often referred to as an `innie`) and a frame element 502 (also
referred to as an `outie`). The recess 501 and frame element 502
provide an acoustic mismatch at the perimeter of the second
electrode 104, improve signal reflections and reduce acoustic
losses. Ultimately, reduced losses translate into an improved
Q-factor of the device. While the recess 501 and the frame element
502 are shown on the second electrode 104, these features may
instead be provided on the first electrode 102, or selectively on
both the first and second electrodes 102, 104. Further details of
the use, formation and benefits of the recess 501 and the frame
element 502 are found for example, in commonly owned U.S. Pat. No.
7,280,007 entitled "Thin Film Bulk Acoustic Resonator with a Mass
Loaded Perimeter" to Feng, et al.; and commonly owned U.S. Patent
Application Publication 20070205850 entitled "Piezoelectric
Resonator Structure and Electronic Filters having Frame Elements"
to Jamneala, et al. The disclosures of this patent and patent
application publication are specifically incorporated herein by
reference.
[0048] FIG. 6 shows a graph of the impedance Rp at parallel
resonance for FBARs, including certain acoustic resonators of
representative embodiments. Notably, Rp of a known resonator is
shown at 601; Rp of an acoustic resonator comprising the bridge 106
(e.g., acoustic resonator 100 of FIG. 1) is shown at 602; Rp of an
acoustic resonator comprising recesses and frame elements (with no
bridge) is shown at 603; and Rp of an acoustic resonator comprising
both the bridge 106, and the recess 501 and the frame element 502
(e.g., acoustic resonator 500 of FIG. 5) is shown at 604.
[0049] The known resonator typically has Rp (shown at 601) of
approximately 2000 ohm. The addition of a recess and a frame
element in a known FBAR increases Rp by approximately 1 k.OMEGA. as
shown at 602. Similarly, the addition of the bridge 106 but not the
recess 501 and or the frame element 502 increases Rp by
approximately 1 k.OMEGA. as shown at 603. However, when adding
combined features of the bridge 106 and the recess 501 and frame
element 502, the overall parallel resonance Rp improves by nearly 3
k.OMEGA. (over that of the known resonator) as shown at 604.
Accordingly, the bridge 106, and the recess 501 and frame element
502 provide a synergistic increase in the parallel resonance Rp, as
is evident by a comparison of 601 and 604 in FIG. 6. It is
beneficial to have comparatively high Rp in FBARs to provide
comparatively low insertion loss and comparatively `fast` roll off
filters comprising such FBARs.
[0050] As is known, although the use of recesses such as recess 501
results in a comparatively small increase in the effective coupling
coefficient (kt.sup.2), there can be a degradation in the effective
coupling coefficient (kt.sup.2) as a result of the frame elements
and recesses. In some applications, it may be useful to mitigate
this degradation, even though the improvement in the Q-factor may
not be as great. For instance, it is known that the bandwidth of an
FBAR filter is related to kt.sup.2. As such, a degradation of
kt.sup.2 can reduce the bandwidth of the FBAR filter. Certain
representative embodiments described presently provide somewhat of
a trade-off of an acceptable Q-factor and an acceptable degradation
of kt.sup.2.
[0051] FIG. 7 shows a graph of the effective coupling coefficient
(kt.sup.2) for FBARs, including certain acoustic resonators of
representative embodiments. The effective coupling coefficient
(kt.sup.2) of a known resonator is shown at 701; the effective
coupling coefficient (kt.sup.2) of an acoustic resonator comprising
bridge 106 (e.g., acoustic resonator 100 of FIG. 1) is shown at
702; the effective coupling coefficient (kt.sup.2) a known acoustic
resonator comprising a recess and a frame element (but with no
bridge) is shown at 703; and the effective coupling coefficient
(kt.sup.2) of an acoustic resonator comprising both a bridge 106,
and the recess 501 and the frame element 502 (e.g., acoustic
resonator 500 of FIG. 5) is shown at 704.
[0052] The effective coupling coefficient (kt.sup.2) of the known
resonator is approximately 5.3 as shown at 701. The addition of the
bridge 106 improves the effective coupling coefficient (kt.sup.2)
to 5.4 as shown at 702. However, adding recesses and frame elements
and no airbridge will result in an effective coupling coefficient
(kt.sup.2) of approximately 5.15 as shown at 703. Finally,
incorporating the bridge 106, the recess 501 and the frame element
502 result in an effective coupling coefficient (kt.sup.2) (shown
at 704) that is substantially the same as the known FBAR. Thus, the
positive impact on the effective coupling coefficient (kt.sup.2)
from the bridge 106 must be contrasted with the negative impact of
recesses and frame elements on the effective coupling coefficient
(kt.sup.2).
[0053] In accordance with illustrative embodiments, acoustic
resonators for various applications such as in electrical filters
are described having a bridge. One of ordinary skill in the art
appreciates that many variations that are in accordance with the
present teachings are possible and remain within the scope of the
appended claims. These and other variations would become clear to
one of ordinary skill in the art after inspection of the
specification, drawings and claims herein. The invention therefore
is not to be restricted except within the spirit and scope of the
appended claims.
* * * * *