U.S. patent application number 13/010326 was filed with the patent office on 2012-07-26 for methods for self-aligned self-assembled patterning enhancement.
This patent application is currently assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION. Invention is credited to Larry Clevenger, Timothy J. Dalton, Carl J. Radens.
Application Number | 20120190205 13/010326 |
Document ID | / |
Family ID | 46544483 |
Filed Date | 2012-07-26 |
United States Patent
Application |
20120190205 |
Kind Code |
A1 |
Clevenger; Larry ; et
al. |
July 26, 2012 |
METHODS FOR SELF-ALIGNED SELF-ASSEMBLED PATTERNING ENHANCEMENT
Abstract
Methods for producing self-aligned, self-assembled
sub-ground-rule features without the need to use additional
lithographic patterning. Specifically, the present disclosure
allows for the creation of assist features that are localized and
self-aligned to a given structure. These assist features can either
have the same tone or different tone to the given feature.
Inventors: |
Clevenger; Larry;
(LaGrangeville, NY) ; Dalton; Timothy J.;
(Ridgefield, CT) ; Radens; Carl J.;
(LaGrangeville, NY) |
Assignee: |
INTERNATIONAL BUSINESS MACHINES
CORPORATION
Armonk
NY
|
Family ID: |
46544483 |
Appl. No.: |
13/010326 |
Filed: |
January 20, 2011 |
Current U.S.
Class: |
438/703 ;
257/E21.24 |
Current CPC
Class: |
G03F 1/36 20130101; B81C
1/00031 20130101; B81C 2201/0149 20130101; B81C 2201/0198 20130101;
G03F 7/0002 20130101 |
Class at
Publication: |
438/703 ;
257/E21.24 |
International
Class: |
H01L 21/31 20060101
H01L021/31 |
Claims
1. A method comprising: forming a structure over a temporary image
transfer material which is provided over a mask substrate, the
structure including at least one mask material; applying a
self-assembly material on the structure; baking the self-assembly
material to form at least one pattern that is self-aligned to the
structure, the at least one pattern having sub-lithographic
dimension; and transferring the structure and the at least one
pattern to the mask substrate.
2. (canceled)
3. The method of claim 2, further comprising transferring the at
least one pattern to the image transfer material layer.
4. The method of claim 3, further comprising patterning a masking
layer to cover at least a portion of the at least one pattern.
5. The method of claim 4, further comprising etching to remove at
least a portion of the at least one pattern not covered by the
masking layer.
6. The method of claim 1, further comprising transferring the image
of the at least one pattern and the mask feature to the mask
substrate.
7. The method of claim 1, wherein the mask material is selected
from the group consisting of: a quartz mask plate, a photo mask
blank, a glass, a doped-glass, a sapphire, an e-beam mask and an
x-ray mask.
8. The method of claim 1, wherein the self-assembly material is
selected from the group consisting of:
polystyrene-block-polymethylmethacrylate (PS-b-PMMA),
polystyrene-block-polyisoprene (PS-b-PI),
polystyrene-block-polybutadiene (PS-b-PBD),
polystyrene-block-polyvinylpyridine (PS-b-PVP),
polystyrene-block-polyethyleneoxide (PS-b-PEO),
polystyrene-block-polyethylene (PS-b-PE),
polystyrene-b-polyorganosilicate (PS-b-POS),
polystyrene-block-polyferrocenyldimethylsilane (PS-b-PFS),
polyethyleneoxide-block-polyisoprene (PEO-b-PI),
polyethyleneoxide-block-polybutadiene (PEO-b-PBD),
polyethyleneoxide-block-polymethylmethacrylate (PEO-b-PMMA),
polyethyleneoxide-block-polyethylethylene (PEO-b-PEE),
polybutadiene-block-polyvinylpyridine (PBD-b-PVP), and
polyisoprene-block-polymethylmethacrylate (PI-b-PMMA).
9. The method of claim 1, wherein the self-assembly material
includes a polystyrene-polymethylmethacrylate (PS-PMMA) having a
molecular weight ratio ranging from about 80:20 to about 60:40.
10. The method of claim 1, wherein the self-assembly material
applying includes spin coating such that a thickness of the
self-assembly material is thickest next to the structure.
11. A method comprising: providing a mask substrate; forming a
temporary image transfer material layer over the mask substrate;
forming a structure over the image transfer material, the structure
including at least one mask material; applying a self-assembly
material on the structure; baking the self-assembly material to
form at least one pattern that is self-aligned to the structure,
the at least one pattern having sub-lithographic dimension; and
transferring the structure and the at least one pattern to the mask
substrate and the image transfer material layer.
12. The method of claim 11, further comprising patterning a masking
layer to cover at least a portion of the at least one pattern.
13. The method of claim 12, further comprising etching to remove at
least a portion of the at least one pattern not covered by the
masking layer.
14. The method of claim 11, wherein the mask material is selected
from the group consisting of: a quartz mask plate, a photo mask
blank, a glass, a doped-glass, a sapphire, an e-beam mask and an
x-ray mask.
15. The method of claim 11, wherein the self-assembly material is
selected from the group consisting of:
polystyrene-block-polymethylmethacrylate (PS-b-PMMA),
polystyrene-block-polyisoprene (PS-b-PI),
polystyrene-block-polybutadiene (PS-b-PBD),
polystyrene-block-polyvinylpyridine (PS-b-PVP),
polystyrene-block-polyethyleneoxide (PS-b-PEO),
polystyrene-block-polyethylene (PS-b-PE),
polystyrene-b-polyorganosilicate (PS-b-POS),
polystyrene-block-polyferrocenyldimethylsilane (PS-b-PFS),
polyethyleneoxide-block-polyisoprene (PEO-b-PI),
polyethyleneoxide-block-polybutadiene (PEO-b-PBD),
polyethyleneoxide-block-polymethylmethacrylate (PEO-b-PMMA),
polyethyleneoxide-block-polyethylethylene (PEO-b-PEE),
polybutadiene-block-polyvinylpyridine (PBD-b-PVP), and
polyisoprene-block-polymethylmethacrylate (PI-b-PMMA).
16. The method of claim 11, wherein the self-assembly material
includes a polystyrene-polymethylmethacrylate (PS-PMMA) having a
molecular weight ratio ranging from about 80:20 to about 60:40.
17. The method of claim 11, wherein the self-assembly material
applying includes spin coating such that a thickness of the
self-assembly material is thickest next to the structure.
18. A method comprising: providing a mask substrate; forming an
image transfer material layer over the mask substrate; forming a
structure over the image transfer material, the structure including
at least one mask material selected from the group consisting of: a
quartz mask plate, a photo mask blank, a glass, a doped-glass, a
sapphire, an e-beam mask and an x-ray mask; spin coating a
self-assembly material on the structure, the self-assembly material
including a polystyrene-polymethylmethacrylate (PS-PMMA) having a
molecular weight ratio ranging from about 80:20 to about 60:40,
wherein a thickness of the self-assembly material is thickest next
to the structure; baking the self-assembly material to form at
least one pattern that is self-aligned to the structure, the at
least one pattern having sub-lithographic dimension; patterning a
masking layer to cover at least a portion of the at least one
pattern; etching to remove at least a portion of the at least one
pattern not covered by the masking layer; and transferring the
structure and the at least one pattern to the mask substrate and
the image transfer material layer.
19. The method of claim 18, wherein the self-assembly material is
selected from the group consisting of:
polystyrene-block-polymethylmethacrylate (PS-b-PMMA),
polystyrene-block-polyisoprene (PS-b-PI),
polystyrene-block-polybutadiene (PS-b-PBD),
polystyrene-block-polyvinylpyridine (PS-b-PVP),
polystyrene-block-polyethyleneoxide (PS-b-PEO),
polystyrene-block-polyethylene (PS-b-PE),
polystyrene-b-polyorganosilicate (PS-b-POS),
polystyrene-block-polyferrocenyldimethylsilane (PS-b-PFS),
polyethyleneoxide-block-polyisoprene (PEO-b-PI),
polyethyleneoxide-block-polybutadiene (PEO-b-PBD),
polyethyleneoxide-block-polymethylmethacrylate (PEO-b-PMMA),
polyethyleneoxide-block-polyethylethylene (PEO-b-PEE),
polybutadiene-block-polyvinylpyridine (PBD-b-PVP), and
polyisoprene-block-polymethylmethacrylate (PI-b-PMMA).
Description
BACKGROUND OF THE INVENTION
[0001] 1. Technical Field
[0002] The invention relates generally to micro-scale or nano-scale
device fabrication, and more particularly, to methods for forming a
mask with self-aligned, self-assembled sub-lithographic
features.
[0003] 2. Background Art
[0004] A mask is a glass or quartz plate containing information
about the features to be printed on a semiconductor wafer. This
information is contained in variations in the plate that create
differences in topography, transmittance or phase. The mask is used
as a master template to transfer design images onto a wafer either
through exposure to radiation (lithography) or through direct
contact (nanoimprint). The mask is an intermediate step created to
transfer the design to the wafer image, so the mask features are
adjusted to create the desired wafer image.
[0005] A simple form of altering the mask data is to change the
size or shape of the mask feature so that the printed wafer feature
size matches the desired feature size and shape. A more complex
change to the design is to add sub resolution features (SRAFs) that
are too small to transfer to the wafer, but improve the
printability of design features. The result is a large increase in
very small features that are placed around design features. These
small features challenge the resolution of the standard mask
fabrication process. If small features are desired in a different
material from the main feature, 1.sup.st- to -2.sup.nd pass pattern
alignment is inadequate. These features also consume time in many
ways. It takes time to generate sub resolution features and output
mask data. The final mask data set is significantly larger than the
input design data. The larger the data file size of the mask data,
the slower the transfer of data, the slower the fracturing of the
data into write-ready form, and the slower the mask fabrication
process. If a problem is found with the sub resolution feature
placement or size, the entire data processing sequence must be
initiated again.
SUMMARY OF THE INVENTION
[0006] This disclosure presents methods for producing self-aligned,
self-assembled sub-ground-rule features without the need to use
additional lithographic patterning. Specifically, the present
disclosure allows for the creation of assist features that are
localized and self-aligned to a given structure. These assist
features can either have the same tone or different tone to the
given feature.
[0007] Aspects of the invention provide a method comprising:
forming a structure over a mask substrate, the structure including
at least one mask material; applying a self-assembly material on
the structure; baking the self-assembly material to form at least
one pattern that is self-aligned to the structure, the at least one
pattern having sub-lithographic dimension; and transferring the
structure and the at least one pattern to the mask substrate.
[0008] The illustrative aspects of the present invention are
designed to solve the problems herein described and/or other
problems not discussed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] These and other features of this invention will be more
readily understood from the following detailed description of the
various aspects of the invention taken in conjunction with the
accompanying drawings that depict various embodiments of the
invention, in which:
[0010] FIGS. 1-9 show a cross section view of the mask illustrating
methods of the present disclosure.
[0011] It is noted that the drawings of the invention are not to
scale. The drawings are intended to depict only typical aspects of
the invention, and therefore should not be considered as limiting
the scope of the invention. In the drawings, like numbering
represents like elements between the drawings.
DETAILED DESCRIPTION
[0012] One approach in creating assist features is to begin with at
least one mask patterned structure or structure 30 on top of a mask
substrate 10 as shown in FIG. 1. Optionally, an image transfer
material 20 may also be provided between the substrate and the
patterned structures. Image transfer material 20 can be a temporary
material used to transfer the pattern into mask substrate 10. Hard
mask structure 30 is patterned using conventional techniques such
as e-beam lithography. As demonstrated in FIG. 2, a self-assembly
material 40, such as diblock copolymer, is spin coated in such a
manner that the thickness of the copolymer layer varies from being
thickest right next to structure 30, and being thinner as the
distance away from the feature is increased. The spin speed and
viscosity of the diblock is chosen so that the diblock thickness is
in the right range for self-assembly to occur only between regions
B and C, and B' and C', as show in FIG. 2. For sections between
regions A and B, C and C', and B' and A' of FIG. 2, the diblock is
of the incorrect thickness (too thin) for self assembly to occur.
Accordingly, only sections of the copolymer layer adjacent to
structure 30 will assemble.
[0013] There are many different types of block copolymers that can
be used for practicing the present invention. As long as a block
copolymer contains two or more different polymeric block components
that are not immiscible with one another, such two or more
different polymeric block components are capable of separating into
two or more different phases on a nanometer scale and thereby form
patterns of isolated nano-sized structural units under suitable
conditions.
[0014] In one embodiment of the present invention, the block
copolymer consists essentially of first and second polymeric block
components A and B that are immiscible with each other. The block
copolymer may contain any numbers of the polymeric block components
A and B arranged in any manner. The block copolymer can have either
a linear or a branched structure. Preferably, such a block polymer
is a linear diblock copolymer having the formula of A-B. Further,
the block copolymer can have any one of the following formula:
##STR00001##
[0015] Specific examples of suitable block copolymers that can be
used for forming the structural units of the present invention may
include, but are not limited to:
polystyrene-block-polymethylmethacrylate (PS-b-PMMA),
polystyrene-block-polyisoprene (PS-b-PI),
polystyrene-block-polybutadiene (PS-b-PBD),
polystyrene-block-polyvinylpyridine (PS-b-PVP),
polystyrene-block-polyethyleneoxide (PS-b-PEO),
polystyrene-block-polyethylene (PS-b-PE),
polystyrene-b-polyorganosilicate (PS-b-POS),
polystyrene-block-polyferrocenyldimethylsilane (PS-b-PFS),
polyethyleneoxide-block-polyisoprene (PEO-b-PI),
polyethyleneoxide-block-polybutadiene (PEO-b-PBD),
polyethyleneoxide-block-polymethylmethacrylate (PEO-b-PMMA),
polyethyleneoxide-block-polyethylethylene (PEO-b-PEE),
polybutadiene-block-polyvinylpyridine (PBD-b-PVP), and
polyisoprene-block-polymethylmethacrylate (PI-b-PMMA).
[0016] The specific structural units formed by the block copolymer
are determined by the molecular weight ratio between the first and
second polymeric block components A and B. For example, when the
ratio of the molecular weight of the first polymeric block
component A over the molecular weight of the second polymeric block
component B is greater than about 80:20, the block copolymer will
form an ordered array of spheres composed of the second polymeric
block component B in a matrix composed of the first polymeric block
component A. When the ratio of the molecular weight of the first
polymeric block component A over the molecular weight of the second
polymeric block component B is less than about 80:20 but greater
than about 60:40, the block copolymer will form an ordered array of
cylinders composed of the second polymeric block component B in a
matrix composed of the first polymeric block component A. When the
ratio of the molecular weight of the first polymeric block
component A over the molecular weight of the second polymeric block
component B is less than about 60:40 but is greater than about
40:60, the block copolymer will form alternating lamellae composed
of the first and second polymeric block components A and B.
Therefore, the molecular weight ratio between the first and second
polymeric block components A and B can be readily adjusted in the
block copolymer of the present invention, in order to form desired
structural units.
[0017] In one embodiment of the present invention, the ratio of the
molecular weight of the first polymeric block component A over the
molecular weight of the second polymeric block component B ranges
from about 80:20 to about 60:40, so that the block copolymer of the
present invention will form an ordered array of lines composed of
the second polymeric block component B in a matrix composed of the
first polymeric block component A.
[0018] Preferably, one of the components A and B can be selectively
removable relative to the other, thereby resulting in either
isolated and orderly arranged structural units composed of the
un-removed component, or a continuous structural layer containing
isolated and orderly arranged cavities or trenches left by the
removable component.
[0019] FIG. 3 shows an unremovable component 45 of the block
copolymer, i.e., an assembled portion. It is noted that although
the instant embodiment illustrates the formation of a line/space
pattern, the present invention is not limited to the same. Since
self-assembled block copolymers are used in the inventive method,
each repeating unit has a width of about 50 nm or less. Other types
of patterns that can be patterned/formed include, for example,
spheres, cylinders, or lamellae.
[0020] In one embodiment of the present invention, the block
copolymer used for forming the self-assembled periodic patterns of
the present invention is PS-b-PMMA with a PS:PMMA molecular weight
ratio ranging from about 80:20 to about 60:40.
[0021] Typically, mutual repulsion between different polymeric
block components in a block copolymer is characterized by the term
.chi.N, where .chi. is the Flory-Huggins interaction parameter and
N is the degree of polymerization. The higher .chi.N, the higher
the repulsion between the different blocks in the block copolymer,
and the more likely the phase separation therebetween. When
.chi.N>10 (which is hereinafter referred to as the strong
segregation limit), there is a strong tendency for the phase
separation to occur between different blocks in the block
copolymer.
[0022] For a PS-b-PMMA diblock copolymer, .chi. can be calculated
as approximately 0.028+3.9/T, where T is the absolute temperature.
Therefore, .chi. is approximately 0.0362 at 473K
(.apprxeq.200.degree. C.). When the molecular weight (Mn) of the
PS-b-PMMA diblock copolymer is approximately 64 Kg/mol, with a
molecular weight ratio (PS:PMMA) of approximately 66:34, the degree
of polymerization N is about 622.9, so .chi.N is approximately 22.5
at 200.degree. C.
[0023] In this manner, by adjusting one or more parameters such as
the composition, the total molecular weight, and the annealing
temperature, the mutual compulsion between the different polymeric
block components in the block copolymer of the present invention
can be readily controlled to effectuate desired phase separation
between the different block components. The phase separation in
turn leads to formation of self-assembled periodic patterns
containing ordered arrays of repeating structural units (i.e.,
spheres, lines, cylinders, or lamellae), as described
hereinabove.
[0024] In order to form the self-assembled periodic patterns, the
block copolymer is first dissolved in a suitable solvent system to
form a block copolymer solution, which is then applied onto a
surface to form a thin block copolymer layer, followed by annealing
of the thin block copolymer layer, thereby effectuating phase
separation between different polymeric block components contained
in the block copolymer.
[0025] The solvent system used for dissolving the block copolymer
and forming the block copolymer solution may comprise any suitable
solvent, including, but not limited to toluene, propylene glycol
monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether
(PGME), and acetone. The block copolymer solution may contain the
block copolymer at a concentration ranging from about 0.1% to about
2% by total weight of the solution. More specifically, the block
copolymer solution may contain the block copolymer at a
concentration ranging from about 0.5 wt % to about 1.5 wt %. In one
embodiment of the present invention, the block copolymer solution
comprises about 0.5 wt % to about 1.5 wt % PS-b-PMMA dissolved in
toluene or PGMEA.
[0026] The block copolymer solution can be applied to the surface
of a device structure by any suitable techniques, including, but
not limited to spin casting, coating, spraying, ink coating, dip
coating, etc. Preferably, the block copolymer solution is spin cast
onto the surface of a device structure to form a thin block
copolymer layer thereon.
[0027] After application of the thin block copolymer layer onto the
device surface, the entire device structure is annealed to
effectuate micro-phase segregation of the different block
components contained by the block copolymer, thereby forming the
periodic patterns with repeating structural units.
[0028] The annealing of the block copolymer can be achieved by
various methods known in the art, including, but not limited to
thermal annealing (either in a vacuum or in an inert atmosphere
containing nitrogen or argon), ultra-violet annealing, laser
annealing, solvent vapor-assisted annealing (either at or above
room temperature), and supercritical fluid-assisted annealing,
which are not described in detail here in order to avoid obscuring
the invention.
[0029] In one embodiment of the present invention, a thermal
annealing step is carried out to anneal the block copolymer layer
at an elevated annealing temperature that is above the glass
transition temperature (Tg) of the block copolymer, but below the
decomposition or degradation temperature (Td) of the block
copolymer. More preferably, the thermal annealing includes an
annealing temperature of about 200.degree. C.-300.degree. C. The
thermal annealing may last from less than about 1 hour to about 100
hours, and more typically from about 1 hour to about 15 hours.
[0030] In an alternative embodiment of the present invention, the
block copolymer layer is annealed by ultra-violet (UV)
treatment.
[0031] Following the anneal process, one of the components of the
block copolymer can be removed utilizing a solvent that is
selective to that component relative to the other component of the
block copolymer. The type of solvent may vary and can be, for
example, selected from the following list: polar and aprotic
solvents.
[0032] After the self-assembly material 40 is spin-coated as
discussed above, the self-assembly material 40 is then baked. As
shown in FIG. 3, after bake, the diblock copolymer forms patterns
45 that are self-aligned to mask material 30. Patterns 45 are then
transferred to image transfer material 20 using anisotropic etching
methods, such as reactive ion etching (RIE), as shown in FIG. 4. If
there is no image transfer material 20, then the image pattern is
transferred directly into mask substrate 10.
[0033] As shown in FIG. 5, the remaining polymer is then removed,
leaving regions 50, 60 and 70, using any now known or later
developed techniques. A masking layer may then be patterned using
conventional techniques and placed over the mask 50, 60, 70 to
cover the desired regions. For example, as shown in FIG. 6, layer
85 is positioned such that region 50 and a portion of region 70 are
uncovered, while a portion of region 70 and all of region 60 are
covered.
[0034] Masking layer 85 then will protect the covered patterns
during etching. As shown in FIG. 7, after etching, only region 60
and a portion of region 70 remain. Masking layer 85 can then be
removed, leaving a portion of region 70 which includes a structure
patterned using conventional techniques, and region 60 which
includes structures formed by self-assembly technique.
[0035] Turning to FIG. 8, the image of the structure is at least
partially transferred into mask substrate 10. Mask substrate 10
could include a quartz mask plate including, but not limited to:
photo mask blank, glass, doped-glass, sapphire, e-beam mask, x-ray
mask, or other patterning mask. Then, as shown in FIG. 9, after the
structures are stripped away, a mask is left with the desired
shape.
[0036] The foregoing description of various aspects of the
invention has been presented for purposes of illustration and
description. It is not intended to be exhaustive or to limit the
invention to the precise form disclosed, and obviously, many
modifications and variations are possible. Such modifications and
variations that may be apparent to a person skilled in the art are
intended to be included within the scope of the invention as
defined by the accompanying claims.
* * * * *