U.S. patent application number 13/098255 was filed with the patent office on 2012-02-09 for vertical inline cvd system.
This patent application is currently assigned to APPLIED MATERIALS, INC.. Invention is credited to Suhail Anwar, Makoto Inagawa, Jozef Kudela, Shinichi Kurita, Ikuo Mori, John M. White, Hans Georg Wolf, Dong-Kil Yim, Dennis Zvalo.
Application Number | 20120031335 13/098255 |
Document ID | / |
Family ID | 44862144 |
Filed Date | 2012-02-09 |
United States Patent
Application |
20120031335 |
Kind Code |
A1 |
Kurita; Shinichi ; et
al. |
February 9, 2012 |
VERTICAL INLINE CVD SYSTEM
Abstract
The present invention generally relates to a vertical CVD system
having a processing chamber that is capable of processing multiple
substrates. The multiple substrates are disposed on opposite sides
of the processing source within the processing chamber, yet the
processing environments are not isolated from each other. The
processing source is a horizontally centered vertical plasma
generator that permits multiple substrates to be processed
simultaneously on either side of the plasma generator, yet
independent of each other. The system is arranged as a twin system
whereby two identical processing lines, each with their own
processing chamber, are arranged adjacent to each other. Multiple
robots are used to load and unload the substrates from the
processing system. Each robot can access both processing lines
within the system.
Inventors: |
Kurita; Shinichi; (San Jose,
CA) ; Kudela; Jozef; (San Jose, CA) ; Anwar;
Suhail; (San Jose, CA) ; White; John M.;
(Hayward, CA) ; Yim; Dong-Kil; (Sungnam-City,
KR) ; Wolf; Hans Georg; (Erlensee, DE) ;
Zvalo; Dennis; (Santa Clara, CA) ; Inagawa;
Makoto; (Palo Alto, CA) ; Mori; Ikuo; (San
Jose, CA) |
Assignee: |
APPLIED MATERIALS, INC.
Santa Clara
CA
|
Family ID: |
44862144 |
Appl. No.: |
13/098255 |
Filed: |
April 29, 2011 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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61416532 |
Nov 23, 2010 |
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61354230 |
Jun 13, 2010 |
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61330296 |
Apr 30, 2010 |
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Current U.S.
Class: |
118/723MW ;
118/723R |
Current CPC
Class: |
C23C 16/46 20130101;
C23C 16/463 20130101; C23C 16/511 20130101; H01L 21/67098 20130101;
H01L 21/67126 20130101; H01J 37/32513 20130101; H01L 21/67201
20130101; H01L 21/67173 20130101; C23C 16/54 20130101; H01L 21/6719
20130101; H01J 37/3222 20130101; H01J 37/32522 20130101; H01J
37/32899 20130101; H01J 37/32192 20130101; C23C 16/4587 20130101;
H01L 21/67712 20130101; H01J 37/32889 20130101 |
Class at
Publication: |
118/723MW ;
118/723.R |
International
Class: |
C23C 16/511 20060101
C23C016/511; C23C 16/458 20060101 C23C016/458; C23C 16/455 20060101
C23C016/455 |
Claims
1. An apparatus, comprising: a chamber body; a plurality of plasma
generators, horizontally centered within the chamber body and
extending vertically within the chamber body such that sufficient
space remains within the chamber body for one or more substrates to
be processed on opposite sides of the plurality of plasma
generators, each plasma generator having a first end adjacent a
bottom of the chamber body and a second end adjacent a top of the
chamber body; a first waveguide coupled to the first end of each
plasma generator; a second waveguide coupled to the second end of
each plasma generator; a first power source coupled to each first
waveguide, the first power source disposed outside of the chamber
body; and a second power source coupled to each second waveguide,
the second power source disposed outside of the chamber body, the
second power sources are collectively arranged in a staggered
pattern such that adjacent second waveguides extend in opposite
directions from the plasma generators to corresponding second power
sources.
2. The apparatus of claim 1, wherein the plurality of plasma
generators are microwave generators.
3. The apparatus of claim 2, further comprising a plurality of gas
introduction tubes disposed within the chamber body and adjacent
the plurality of microwave generators.
4. The apparatus of claim 3, wherein the chamber body includes one
or more lids that are removable to access the plurality of
microwave generators, wherein each lid has a plurality of openings
extending therethrough.
5. The apparatus of claim 4, further comprising one or more vacuum
pumps coupled with the chamber body such that the chamber body may
be evacuated through the plurality of openings extending through
each lid.
6. The apparatus of claim 5, wherein the chamber body is disposed
on a frame and wherein the chamber body has a first end fixed to
the frame.
7. The apparatus of claim 6, further comprising a
polytetrafluoroethylene element disposed on the frame, and wherein
the chamber body has a second end disposed on the
polytetrafluoroethylene element and is movable along the
polytetrafluoroethylene element.
8. An apparatus, comprising: a chamber body; a plurality of plasma
generators, horizontally centered within the chamber body and
extending vertically within the chamber body such that sufficient
space remains within the chamber body for one or more substrates to
be processed on opposite sides of the plurality of plasma
generators, each plasma generator having a first end adjacent a
bottom of the chamber body and a second end adjacent a top of the
chamber body; a first waveguide coupled to the first end of each
plasma generator; a second waveguide coupled to the second end of
each plasma generator; a first power source coupled to each first
waveguide, the first power source disposed outside of the chamber
body; and a second power source coupled to each second waveguide,
the second power source disposed outside of the chamber body, the
second power sources are collectively arranged in a pattern such
that adjacent second waveguides extend in the same direction from
the plasma generators to corresponding second power sources.
9. The apparatus of claim 8, wherein the plurality of plasma
generators are microwave generators.
10. The apparatus of claim 9, further comprising a plurality of gas
introduction tubes disposed within the chamber body and adjacent
the plurality of microwave generators.
11. The apparatus of claim 10, wherein the chamber body includes
one or more lids that are removable to access the plurality of
microwave generators, wherein each lid has a plurality of openings
extending therethrough.
12. The apparatus of claim 11, further comprising one or more
vacuum pumps coupled with the chamber body such that the chamber
body may be evacuated through the plurality of openings extending
through each lid.
13. The apparatus of claim 12, wherein the chamber body is disposed
on a frame and wherein the chamber body has a first end fixed to
the frame.
14. The apparatus of claim 13, further comprising a
polytetrafluoroethylene element disposed on the frame, and wherein
the chamber body has a second end disposed on the
polytetrafluoroethylene element and is movable along the
polytetrafluoroethylene element.
15. An apparatus, comprising: a chamber body; a plurality of plasma
generators, horizontally centered within the chamber body and
extending vertically within the chamber body such that sufficient
space remains within the chamber body for one or more substrates to
be processed on opposite sides of the plurality of plasma
generators, each plasma generator having a first end adjacent a
bottom of the chamber body and a second end adjacent a top of the
chamber body; a first angled waveguide coupled to the first end of
each plasma generator; a second angled waveguide coupled to the
second end of each plasma generator; a first power source coupled
to each first waveguide, the first power source disposed outside of
the chamber body; and a second power source coupled to each second
waveguide, the second power source disposed outside of the chamber
body, the second power sources are collectively arranged in a
staggered pattern such that each second waveguide extends up along
a side of the chamber body and along a roof of the chamber body to
the first end of each plasma generator.
16. The apparatus of claim 15, wherein the plurality of plasma
generators are microwave generators.
17. The apparatus of claim 16, further comprising a plurality of
gas introduction tubes disposed within the chamber body and
adjacent the plurality of microwave generators.
18. The apparatus of claim 17, wherein the chamber body includes
one or more lids that are removable to access the plurality of
microwave generators, wherein each lid has a plurality of openings
extending therethrough.
19. The apparatus of claim 18, further comprising one or more
vacuum pumps coupled with the chamber body such that the chamber
body may be evacuated through the plurality of openings extending
through each lid.
20. The apparatus of claim 19, further comprising: a frame; and a
polytetrafluoroethylene element disposed on the frame, wherein the
chamber body is disposed on a frame, wherein the chamber body has a
first end fixed to the frame and wherein the chamber body has a
second end disposed on the polytetrafluoroethylene element and is
movable along the polytetrafluoroethylene element.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application claims priority to U.S. Provisional Patent
Application Ser. No. 61/416,532 (APPM/15294L03), filed Nov. 23,
2010, U.S. Provisional Patent Application Ser. No. 61/354,230
(APPM/15294L02), filed Jun. 13, 2010, and U.S. Provisional Patent
Application Ser. No. 61/330,296 (APPM/15294L), filed Apr. 30, 2010
each of which are incorporated by reference in their entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] Embodiments of the present invention generally relate to a
vertical chemical vapor deposition (CVD) system.
[0004] 2. Description of the Related Art
[0005] CVD is a process whereby chemical precursors are introduced
into a processing chamber, chemically react to form a predetermined
compound or material, and deposited onto a substrate within the
processing chamber. There are several CVD processes. One CVD
process is plasma enhanced chemical vapor deposition (PECVD)
whereby a plasma is ignited in the chamber to enhance the reaction
between the precursors. PECVD may be accomplished by utilizing an
inductively coupled plasma source or a capacitively coupled plasma
source.
[0006] The CVD process may be used to process large area
substrates, such as flat panel displays or solar panels. CVD may be
used to deposit layers such as silicon based films for transistors.
There is a need in the art for a method and apparatus that reduces
the cost of manufacturing flat panel display devices.
SUMMARY OF THE INVENTION
[0007] The present invention generally relates to a vertical CVD
system having a processing chamber that is capable of processing
multiple substrates. The multiple substrates are disposed on
opposite sides of the processing source within the processing
chamber, yet the processing environments are not isolated from each
other. The processing source is a horizontally centered vertical
plasma generator that permits multiple substrates to be processed
simultaneously on either side of the plasma generator, yet
independent of each other. The system is arranged as a twin system
whereby two identical processing lines, each with their own
processing chamber, are arranged adjacent to each other. Multiple
robots are used to load and unload the substrates from the
processing system. Each robot can access both processing lines
within the system.
[0008] In one embodiment, an apparatus includes a chamber body, a
plurality of plasma generators, a first waveguide coupled to the
first end of each plasma generator, a second waveguide coupled to
the second end of each plasma generator, a first power source
coupled to the first waveguide, the first power source disposed
outside of the chamber body, and a second power source coupled to
the second waveguide. The plurality of plasma generators are
horizontally centered within the chamber body and extend vertically
within the chamber body such that sufficient space remains within
the chamber body for one or more substrates to be processed on
opposite sides of the plurality of plasma generators. Each plasma
generator has a first end adjacent a bottom of the chamber body and
a second end adjacent a top of the chamber body. The second power
sources are disposed outside of the chamber body. The second power
sources are collectively arranged in a staggered pattern such that
adjacent second waveguides extend in opposite directions from the
plasma generators to corresponding second power sources.
[0009] In another embodiment, an apparatus includes a chamber body,
a plurality of plasma generators, a first waveguide coupled to the
first end of each plasma generator, a second waveguide coupled to
the second end of each plasma generator, a first power source
coupled to the first waveguide, the first power source disposed
outside of the chamber body, and a second power source coupled to
the second waveguide. The plurality of plasma generators are
horizontally centered within the chamber body and extend vertically
within the chamber body such that sufficient space remains within
the chamber body for one or more substrates to be processed on
opposite sides of the plurality of plasma generators. Each plasma
generator has a first end adjacent a bottom of the chamber body and
a second end adjacent a top of the chamber body. The second power
sources are disposed outside of the chamber body. The second power
sources are collectively arranged in a pattern such that adjacent
second waveguides extend in the same direction from the plasma
generators to corresponding second power sources.
[0010] In another embodiment, an apparatus includes a chamber body,
a plurality of plasma generators, a first angled waveguide coupled
to the first end of each plasma generator, a second angled
waveguide coupled to the second end of each plasma generator, a
first power source coupled to the first waveguide, the first power
source disposed outside of the chamber body, and a second power
source coupled to the second waveguide. The plurality of plasma
generators are horizontally centered within the chamber body and
extend vertically within the chamber body such that sufficient
space remains within the chamber body for one or more substrates to
be processed on opposite sides of the plurality of plasma
generators. Each plasma generator has a first end adjacent a bottom
of the chamber body and a second end adjacent a top of the chamber
body. The second power sources are disposed outside of the chamber
body. The second power sources are collectively arranged in a
staggered pattern such that each second waveguide extends up along
a side of the chamber body and along a roof of the chamber body to
the first end of each plasma generator.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] So that the manner in which the above recited features of
the present invention can be understood in detail, a more
particular description of the invention, briefly summarized above,
may be had by reference to embodiments, some of which are
illustrated in the appended drawings. It is to be noted, however,
that the appended drawings illustrate only typical embodiments of
this invention and are therefore not to be considered limiting of
its scope, for the invention may admit to other equally effective
embodiments.
[0012] FIG. 1 is a schematic representation of a processing system
according to one embodiment.
[0013] FIG. 2 is a schematic top view of the processing system of
FIG. 1.
[0014] FIG. 3 is a schematic side view of the processing system of
FIG. 1.
[0015] FIG. 4 is a close-up view of the processing chamber of FIG.
1.
[0016] FIG. 5 is a schematic back view of the processing system of
FIG. 1.
[0017] FIG. 6A is a schematic cross-sectional view of the
processing chamber of FIG. 1.
[0018] FIG. 6B is a partial side view of the processing chamber of
FIG. 1.
[0019] FIG. 7 is a schematic illustration of an evacuation system
for the processing system of FIG. 1.
[0020] FIG. 8 is an isometric view of the processing chamber of
FIG. 1.
[0021] FIG. 9 is a schematic top illustration of the substrate
sequencing for the processing system of FIG. 1.
[0022] FIGS. 10A-10C are schematic representations of the
processing chambers of FIG. 1.
[0023] FIGS. 11A and 11B are schematic representations of a
processing chamber according to another embodiment.
[0024] FIGS. 12A and 12B are schematic representations of a
processing chamber according to another embodiment.
[0025] FIGS. 13A and 13B are schematic representations of a
processing chamber according to another embodiment.
[0026] To facilitate understanding, identical reference numerals
have been used, where possible, to designate identical elements
that are common to the figures. It is contemplated that elements
and features of one embodiment may be beneficially incorporated in
other embodiments without further recitation.
DETAILED DESCRIPTION
[0027] The present invention generally relates to a vertical CVD
system having a processing chamber that is capable of processing
multiple substrates. The multiple substrates are disposed on
opposite sides of the processing source within the processing
chamber, yet the processing environments are not isolated from each
other. The processing source is a horizontally centered vertical
plasma generator that permits multiple substrates to be processed
simultaneously on either side of the plasma generator, yet
independent of each other. The system is arranged as a twin system
whereby two identical processing lines, each with their own
processing chamber, are arranged adjacent to each other. Multiple
robots are used to load and unload the substrates from the
processing system. Each robot can access both processing lines
within the system.
[0028] A horizontally centered vertical plasma generator is a
plasma generator that has a plasma source that is vertical within
the processing chamber. By vertical it is understood that the
plasma source extends from a first end near or at the bottom of the
chamber to a second end at near or at the top of the chamber. By
being horizontally centered it is understood that the plasma source
is equally spaced between two walls or ends of the processing
chamber.
[0029] The embodiments discussed herein may be practiced utilizing
a vertical CVD chamber in a modified AKT Aristo system available
from Applied Materials, Inc., Santa Clara, Calif. It is to be
understood that the embodiments may be practiced in other systems
as well, including those sold by other manufacturers.
[0030] FIG. 1 is a schematic representation of a vertical, linear
CVD system 100 according to one embodiment. The system 100 may be
sized to process substrates having a surface area of greater than
about 90,000 mm.sup.2 and able to process more than 90 substrates
per hour when depositing a 2,000 Angstrom thick silicon nitride
film. The system 100 preferably includes two separate process lines
114A, 114B coupled together by a common system control platform 112
to form a twin process line configuration/layout. A common power
supply (such as an AC power supply), common and/or shared pumping
and exhaust components and a common gas panel may be used for the
twin process lines 114A, 114B. Each process line 114A, 114B may
process more than 45 substrates per hour for a system total of
greater than 90 substrates per hour. It is also contemplated that
the system may be configured using a single process line or more
than two process lines.
[0031] There are several benefits to the twin processing lines
114A, 114B for vertical substrate processing. Because the chambers
are arranged vertically, the footprint of the system 100 is about
the same as a single, conventional horizontal processing line.
Thus, within approximately the same footprint, two processing lines
114A, 114B are present, which is beneficial to the manufacturer in
conserving floor space in the fab. To help understand the meaning
of the term "vertical", consider a flat panel display. The flat
panel display, such as a computer monitor, has a length, a width
and a thickness. When the flat panel display is vertical, either
the length or width extends perpendicular from the ground plane
while the thickness is parallel to the ground plane. Conversely,
when a flat panel display is horizontal, both the length and width
are parallel to the ground plane while the thickness is
perpendicular to the ground plane. For large area substrates, the
length and width are many times greater than the thickness of the
substrate.
[0032] Each processing line 114A, 114B includes a substrate
stacking module 102A, 102B from which fresh substrates (i.e.,
substrates which have not yet been processed within the system 100)
are retrieved and processed substrates are stored. Atmospheric
robots 104A, 104B retrieve substrates from the substrate stacking
modules 102A, 102B and place the substrates into a dual substrate
loading station 106A, 106B. It is to be understood that while the
substrate stacking module 102A, 102B is shown having substrates
stacked in a horizontal orientation, substrates disposed in the
substrate stacking module 102A, 102B may be maintained in a
vertical orientation similar to how the substrates are held in the
dual substrate loading station 106A, 106B. The fresh substrates are
then moved into dual substrate load lock chambers 108A, 108B and
then to a dual substrate processing chamber 1010A, 1010B. The
substrate, now processed, then returns through one of the dual
substrate load lock chambers 108A, 108B to one of the dual
substrate loading stations 106A, 106B, where it is retrieved by one
of the atmospheric robot 104A, 104B and returned to one of the
substrate stacking modules 102A, 102B.
[0033] FIG. 2 is a plan view of the embodiment of FIG. 1. The
sequence will be discussed in reference to both processing lines
114A, 114B at the same time even though a substrate goes down only
one path. Each robot 104A, 104B may move along a common track 202.
As will be discussed below, each robot 104A, 104B may access both
substrate loading stations 106A, 106B. Occasionally, the substrate
carrier that is used to transport the substrates through the
processing lines 114A, 114B will need to be serviced for purposes
of repair, cleaning, or replacement. Thus, substrate carrier
service stations 204A, 204B are coupled to the processing chambers
110A, 110B along the processing lines 114A, 114B opposite the load
lock chambers 108A, 108B.
[0034] To evacuate the load lock chambers 108A, 108B as well as the
processing chambers 110A, 110B, one or more vacuum pumps 206 may be
coupled thereto. To evacuate the load lock chambers 108A, 108B, the
vacuum pump 206 draws the vacuum from an evacuation line 210 that
is coupled to both load lock chambers 106A, 106B. To evacuate the
processing chambers 110A, 110B, evacuation lines 212, 214, 216,
218, 220, 222, 224, 226 are coupled to the processing chambers
110A, 110B. The evacuation of the load lock chambers 108A, 108B and
processing chambers 110A, 110B will be discussed further below with
reference to FIG. 7.
[0035] FIG. 3 is a side view of the system 100. During operation,
the processing chambers 110A, 110B may raise in temperature and
thus be subject to thermal expansion. Similarly, substrates with
elevated temperatures may enter the load lock chambers 108A, 108B
from the processing chambers 110A, 110B which may cause the load
lock chambers 108A, 108B to experience thermal expansion. To
compensate for the thermal expansion of the load lock chambers
108A, 108B, the load lock chambers 108A, 108B may have the end 302
that is adjacent the processing chambers 110A, 110B fixed yet
permit the remainder of the load lock chamber 108A, 108B, as well
as the adjacent substrate loading station 106A, 106B to move in the
direction shown by arrow "A". Similarly, the processing chambers
110A, 110B may have an end 304 fixed adjacent the load lock
chambers 108A, 108B while the other end of the processing chamber
110A, 110B as well as the substrate carrier service stations 204A,
204B may move in the direction shown by arrow "B" by thermal
expansion. As the processing chambers 110A, 110B expand due to
thermal expansion, the substrate carrier service stations 204A,
204B also move to permit the processing chambers 110A, 110B to
expand. If the substrate carrier service stations 110A, 110B did
not move as the processing chambers 110A, 110B expanded, the
processing lines 114A, 114B could buckle much like a railroad track
on a hot summer day. Similarly, as the load lock chambers 108A,
108B expand, the substrate loading stations 106A, 106B also move to
permit the load lock chambers 108A, 108B to expand.
[0036] FIG. 4 is a close-up view of the processing chamber 110B
showing the equipment that permits the processing chamber 110B to
move due to thermal expansion. It is to be understood that while
the description will be made with reference to the processing
chamber 110B, the description will be equally applicable to the
load lock chamber 108B. The processing chamber 110B is disposed
over a frame 402. The end 304 of the processing chamber 110B has a
fixed point 404 and a foot portion 406 that may move along a piece
of low friction material 408 that is disposed on the frame 402.
Suitable material that may be used for the low friction material
408 includes polytetrafluoroethylene. It is to be understood that
other low friction materials are also contemplated. It is to be
understood that both the substrate carrier service stations 204A,
204B as well as the substrate loading stations 106A, 106B will have
foot portions disposed over a frame having low friction material to
permit the substrate carrier service stations 204A, 204B and the
substrate loading stations 106A, 106B to move.
[0037] FIG. 5 is a back elevation view of the processing system 100
showing the evacuation system. FIGS. 6A and 6B are top and partial
side views of the processing chamber 110B showing the evacuation
locations for connecting the vacuum system thereto. The evacuation
lines 212, 214, 216, 218, 220, 222, 224, 226 each have a vertical
conduit 502A-502D that then couples to a splitter conduit
504A-504D. Each splitter conduit 504A-504D has two connection
points 506A-506H that couple to the processing chamber 110A, 110B.
Thus, there are four connection points for each side of each
processing chamber 110A, 110B.
[0038] FIG. 6A shows the connection points 602A-602D for processing
chamber 110B. The processing chamber 110B is shown to have two
substrate carriers 604A, 604B, each having a substrate 606A, 606B
thereon. Plasma generators 608 are centrally located as are the gas
introduction conduit 610. The plasma generators 608 are microwave
sources that generate a plasma within the processing chambers 110A,
110B for CVD. The plasma generators 608 are powered by power
sources 614. As shown in FIG. 6B, the connection points 602A, 6021
are disposed near the corners of the chamber lid 612. Because the
connection points 602A-602D are disposed near the corners of the
processing chamber 110B, the processing chamber 110B may be
evacuated substantially uniformly in all areas of the chamber 110B.
If only one evacuation point were utilized, there may be greater
vacuum near the evacuation point as compared to a location further
away. It is contemplated that other evacuation connections are
possible, including additional connections.
[0039] FIG. 7 is a schematic illustration of the evacuation system
700 according to one embodiment. Rather than a single vacuum pump,
each processing chamber 110A, 110B may have several vacuum pumps
702A-702H. Each vertical line 502A-502H splits into the splitter
conduits 504A-504H before coupling to the connection points
602A-602P. A throttle valve 704 may be positioned between the
connection points 602A-602P and the splitter conduits 504A-504H to
control the vacuum level for the respective processing chambers
110A, 110B. It is to be understood that the evacuation system 700
is applicable to a system with fewer vacuum pumps. If one of the
vacuum pumps coupled to a processing chamber does not function, it
is possible for the other vacuum pumps coupled to the processing
chamber to compensate for the non-functioning pump so that the
processing chamber may maintain a predetermined vacuum level.
[0040] The load lock chambers 108A, 108B may be evacuated by a
common vacuum pump 706 coupled to the connection points 708A, 708B
of the load lock chambers 108A, 108B. A two way valve 710 may be
present between the vacuum pump 706 and the connection points 708A,
708B to control the vacuum level of the load lock chambers 108A,
108B.
[0041] FIG. 8 is a side perspective view of a chamber lid 612
spaced from the processing chamber 110B. In order to service the
processing chamber 110B, the lid 612 may be moved as shown by
arrows "C" by disconnecting the vertical conduits 502A, 502E from
the evacuation lines 224, 226 at points 802A, 802B. Thus, the lid
612 may be moved without having to disassemble the entire
evacuation system 700 or moving numerous, heavy system components.
The lid 612 may be moved by sliding the lid 612 away from the
processing chamber 1108 using a movement device such as a crane or
hydraulic lifts.
[0042] FIG. 9 illustrates the sequence for the robots 104A, 104B
removing substrates 906 from the substrate stacking modules 102A,
102B and placing the substrates 906 into the substrate loading
station environments 902A-902D. The substrate loading stations
106A, 106B are shown to have two separate environments 902A-902D.
In each environment, the substrate carrier 906 faces a different
direction. Thus, when the substrates 906 are disposed within the
substrate loading station environments 902A-902D, the substrates
906 are spaced apart by the carriers 904 within each separate
substrate loading station 106A, 106B.
[0043] Robot 104A retrieves a substrate 906 from the substrate
stacking module 102A and moves along the track 202 to place the
substrate 906 in either environment 902B or 902D. When the robot
104A places the substrate 906 in an environment 902B, 902D, the
substrate 906 is placed on a carrier 904 such that the substrate
906 faces the direction of arrow "E" away from the carrier 904.
Similarly, robot 104B retrieves a substrate 906 from the substrate
stacking module 102B and moves along the track 202 to place the
substrate 906 in either environment 902A, 902C. When the robot 104B
places the substrate 906 in an environment 902A, 902C, the
substrate 906 is placed on a carrier 904 such that the substrate
906 faces in the direction of arrow "D" away from the carrier 904.
Thus, both robots 104A, 104B can access the same substrate loading
station 106A, 106B and move along the same track 202. However, each
robot 104A, 1048 accesses a separate environment 902A-902D of the
substrate loading stations 106A, 1068 and can only place the
substrates 906 on respective carriers 904 facing a specific
direction.
[0044] FIGS. 10A-10C are schematic representations of the dual
processing chambers 110A, 110B according to one embodiment. The
dual processing chambers 110A, 110B include a plurality of
microwave antennas 1010 disposed in a linear arrangement in the
center of each processing chamber 110A, 110B. The antennas 1010
extend vertically from a top of the processing chamber to a bottom
of the processing chamber. Each microwave antenna 1010 has a
corresponding microwave power head 1012 at both the top and the
bottom of the processing chamber that is coupled to the microwave
antenna 1010. As shown in FIG. 10B, the microwave power heads 1012
are staggered. The staggering may be due to space limitations.
Power may be independently applied to the each end of the antenna
1010 through each power head 1012. The microwave antennas 1010 may
operate at a frequency within a range of 300 MHz and 300 GHz.
[0045] Each of the processing chambers are arranged to be able to
process two substrates, one on each side of the microwave antennas
1010. The substrates are held in place within the processing
chamber by a platen 1008 and a shadow frame 1004. Gas introduction
tubes may 1014 are disposed between adjacent microwave antennas
1010. The gas introduction tubes 1014 extend vertically from the
bottom to the top of the processing chamber parallel to the
microwave antennas 1010. The gas introduction tubes 1014 permit the
introduction of processing gases, such as silicon precursors and
nitrogen precursors. While not shown in FIGS. 10A-10C, the
processing chambers 110A, 110B may be evacuated through a pumping
port located behind the substrate carriers 1008.
[0046] FIGS. 11A and 11B are schematic representations of a
processing chamber 1100 according to another embodiment. The
processing chamber 1100 includes a plurality of plasma generators,
such as microwave antennas, that extend vertically within the
chamber body from a first end 1108 to a second end 1118. The
processing chamber 1100 includes a shadow frame 1104 on each side
of the plasma generators 1102 for use in processing substrates. As
shown in FIG. 11B, a shadow frame 1104 is disposed on opposite
sides of the plurality of plasma generators 1102 so that there are
two large area substrates may be processed within a single
processing chamber 1100 and thus be exposed to the same processing
environment either simultaneously or consecutively.
[0047] Each plasma generator 1102 is coupled to a first waveguide
1110 at the first end 1108 thereof and to a second waveguide 1116
at the second end 1118 thereof. Each first waveguide 1110 is
coupled to a first power source 1112 while each second waveguide is
coupled to a second power source 1114. The power sources 1112, 1114
may be coupled to the waveguides 1110, 1116 within an enclosure
1106. As best seen in FIG. 11 B, the enclosures 1106 are staggered
"T" shaped enclosures. The staggered "T" shaped enclosures may be
necessary due to space limitations. In such an arrangement,
adjacent waveguides 1110, 1116 extend in opposite, parallel
directions from the ends 1108, 1118 to the respective power sources
1112, 1114. Gas introduction tubes may also be disposed within the
processing chamber 1100 in the manner discussed above with regard
to FIG. 10C.
[0048] FIGS. 12A and 12B are schematic representations of a
processing chamber 1200 according to another embodiment. The
processing chamber 1200 includes a plurality of plasma generators,
such as microwave antennas, that extend vertically within the
chamber body from a first end 1208 to a second end 1218. The
processing chamber 1200 includes a shadow frame 1204 on each side
of the plasma generators 1202 for use in processing substrates. As
shown in FIG. 12B, a shadow frame 1204 is disposed on opposite
sides of the plurality of plasma generators 1202 so that there are
two large area substrates may be processed within a single
processing chamber 1200 and thus be exposed to the same processing
environment either simultaneously or consecutively.
[0049] Each plasma generator 1202 is coupled to a first waveguide
1210 at the first end 1208 thereof and to a second waveguide 1216
at the second end 1218 thereof. Each first waveguide 1210 is
coupled to a first power source 1212 while each second waveguide is
coupled to a second power source 1214. The power sources 1212, 1214
may be coupled to the waveguides 1210, 1216 within an enclosure
1206. As best seen in FIG. 12B, the enclosures 1206 all extend from
the same side of the processing chamber 1200. In such an
arrangement, adjacent waveguides 1210, 1216 extend in the same,
parallel direction from the ends 1208, 1218 to the respective power
sources 1212, 1214. Gas introduction tubes may also be disposed
within the processing chamber 1200 in the manner discussed above
with regard to FIG. 10C.
[0050] FIGS. 13A and 13B are schematic representations of a
processing chamber 1300 according to another embodiment. The
processing chamber 1300 includes a plurality of plasma generators,
such as microwave antennas, that extend vertically within the
chamber body from a first end 1308 to a second end 1318. The
processing chamber 1300 includes a shadow frame 1304 on each side
of the plasma generators 1302 for use in processing substrates. As
shown in FIG. 13B, a shadow frame 1304 is disposed on opposite
sides of the plurality of plasma generators 1302 so that there are
two large area substrates may be processed within a single
processing chamber 1300 and thus be exposed to the same processing
environment either simultaneously or consecutively.
[0051] Each plasma generator 1302 is coupled to a first angled
waveguide 1310 at the first end 1308 thereof and to a second angled
waveguide 1316 at the second end 1318 thereof. Each first angled
waveguide 1310 is coupled to a first power source 1312 while each
second angled waveguide is coupled to a second power source 1314.
Enclosures 1306 are shown on top and bottom of the chamber 1300 by
have been removed from the side of the chamber for clarity in
viewing the waveguides 1310, 1316. As best seen in FIG. 13B, the
waveguides 1310, 1316 extend along the top of the processing
chamber 1300 and down along the side of the processing chamber 1300
to the respective power sources 1312, 1314. Due to the location of
the power sources 1312, 1314 relative to the first and second ends
1308, 1318 of the plasma generators 1302, the waveguides 1310, 1316
are angled. Gas introduction tubes may also be disposed within the
processing chamber 1300 in the manner discussed above with regard
to FIG. 10C.
[0052] By utilizing a vertical CVD system, multiple substrates may
be processed simultaneously. Processing multiple substrates
simultaneously reduces the cost of manufacturing which may increase
the manufacturer's profits.
[0053] While the foregoing is directed to embodiments of the
present invention, other and further embodiments of the invention
may be devised without departing from the basic scope thereof, and
the scope thereof is determined by the claims that follow.
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