U.S. patent application number 13/160980 was filed with the patent office on 2011-10-06 for reduced pitch multiple exposure process.
This patent application is currently assigned to ASML Netherlands B.V.. Invention is credited to Todd J. DAVIS, Steven George HANSEN, Todd D. HIAR, James J. HUNTER, Cassandra May OWEN, Theodore A. PAXTON.
Application Number | 20110244401 13/160980 |
Document ID | / |
Family ID | 37471349 |
Filed Date | 2011-10-06 |
United States Patent
Application |
20110244401 |
Kind Code |
A1 |
PAXTON; Theodore A. ; et
al. |
October 6, 2011 |
REDUCED PITCH MULTIPLE EXPOSURE PROCESS
Abstract
A lithographic method to enhance image resolution in a
lithographic cluster using multiple projections and a lithographic
cluster used to project multiple patterns to form images that are
combined to form an image having enhanced resolution.
Inventors: |
PAXTON; Theodore A.;
(Chandler, AZ) ; DAVIS; Todd J.; (Tempe, AZ)
; HIAR; Todd D.; (Gilbert, AZ) ; OWEN; Cassandra
May; (Chandler, AZ) ; HANSEN; Steven George;
(Phoenix, AZ) ; HUNTER; James J.; (Tempe,
AZ) |
Assignee: |
ASML Netherlands B.V.
Veldhoven
NL
|
Family ID: |
37471349 |
Appl. No.: |
13/160980 |
Filed: |
June 15, 2011 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11177490 |
Jul 11, 2005 |
7981595 |
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13160980 |
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11086664 |
Mar 23, 2005 |
7906270 |
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11177490 |
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Current U.S.
Class: |
430/325 |
Current CPC
Class: |
G03F 7/70466 20130101;
G03F 7/0035 20130101 |
Class at
Publication: |
430/325 |
International
Class: |
G03F 7/20 20060101
G03F007/20 |
Claims
1.-70. (canceled)
71. A non-transitory computer readable medium comprising program
code that, when executed on a computer system, instructs the
computer system to perform a method, the method comprising:
projecting a first pattern onto an area of a substrate coated with
a developable material layer and a first resist layer on top of the
developable material layer; and projecting a second pattern onto an
area of the substrate coated with the developable material layer
and a second resist layer, wherein no etching of material of or on
the substrate immediately beneath the first resist layer and the
developable material layer occurs between projecting the first
pattern and projecting the second pattern, wherein projecting the
first pattern and projecting the second pattern produces a desired
patterned image on the developable material layer.
72. The computer readable medium of claim 71, wherein the desired
patterned image comprises patterned features with a half-pitch
corresponding to a k1 less than or equal to 0.25.
73. The computer readable medium of claim 71, wherein the method
further comprises coating the second resist layer on top of the
developable material layer.
74. The computer readable medium of claim 73, wherein the method
further comprises: after projecting the first pattern and before
coating the second resist layer, applying a post exposure bake to
the substrate having the first pattern on the first resist layer
and the developable material layer.
75. The computer readable medium of claim 71, wherein the method
further comprises: developing the first resist layer and the
developable material layer to form an image of the first pattern on
the developable material layer; and removing the first resist
layer.
76. The computer readable medium of claim 75, wherein removing the
first resist layer and coating the second resist layer are
performed in a same area of a lithographic cluster.
77. The computer readable medium of claim 71, wherein the method
further comprises: after projecting the second pattern, applying a
post exposure bake to the substrate having the second pattern on
the second resist layer and the developable material layer;
developing the second resist layer and the developable material
layer to form an image of the second pattern in the developable
material layer; and removing the second resist layer.
78. The computer readable medium of claim 71, wherein the method
further comprises: prior to projecting the second pattern, shifting
the substrate in the lithographic cluster by a predetermined
distance so as to interleave an image of the second pattern with an
image of the first pattern.
79. A computer readable medium comprising program code that, when
executed on a computer system, instructs the computer system to
perform a method, the method comprising: projecting a first pattern
onto an area of a substrate coated with a developable material
layer and a resist layer on top of the developable material layer;
applying a first post exposure bake to the substrate having the
first pattern in the resist layer and the developable material
layer; projecting a second pattern onto an area of the substrate
coated with the developable material layer and the resist layer,
wherein material of or on the substrate immediately beneath the
resist layer and the developable material layer is not etched
between projecting the first pattern and projecting the second
pattern; and applying a second post exposure bake to the substrate
having the second pattern in the resist layer and the developable
material layer, wherein projecting the first pattern and the second
pattern and applying the first post exposure bake and the second
post exposure bake produces a desired image in or on the
developable material layer.
80. The computer readable medium of claim 79, wherein the desired
image comprises patterned features with a half-pitch corresponding
to a k1 less than or equal to 0.25.
81. The computer readable medium of claim 79, wherein a period
between features of the first pattern and a period between features
of the second pattern is substantially the same.
82. The computer readable medium of claim 79, wherein the method
further comprises, before projecting the second pattern, developing
the resist layer and the developable material layer to form an
image of the first pattern in the developable material layer.
83. The computer readable medium of claim 79, wherein the method
further comprises, after applying the second post exposure bake,
developing the resist layer and the developable material layer to
form an image of the second pattern in the developable material
layer.
84. The computer readable medium of claim 83, wherein the method
further comprises, after developing the resist layer and the
developable material layer to form an image of the second pattern
in the developable material layer, removing the resist layer.
85. The computer readable medium of claim 79, wherein the resist
layer and developable material layer are not developed between
projecting the first pattern and projecting the second pattern.
86. A computer readable medium comprising program code that, when
executed on a computer system, instructs the computer system to
perform a method, the method comprising: projecting a first pattern
onto an area of a substrate coated with a developable material
layer and a resist layer on top of the developable material layer;
applying a post exposure bake to the substrate having the first
pattern in the resist layer and the developable material layer;
projecting a second pattern onto an area of the substrate coated
with the developable material layer and the resist layer, wherein
material of or on the substrate immediately beneath the resist
layer and the developable material layer is not etched between
projecting the first pattern and projecting the second pattern and
wherein the resist layer and developable material layer are not
developed between projecting the first pattern and projecting the
second pattern, wherein projecting the first pattern and the second
pattern and applying the first post exposure bake and the second
post exposure bake produces a desired image in or on the
developable material layer.
87. The computer readable medium of claim 86, wherein the method
further comprises applying a post exposure bake to the substrate
having the second pattern in the resist layer and the developable
material layer.
88. The computer readable medium of claim 86, wherein the desired
image comprises patterned features with a half-pitch corresponding
to a k1 less than or equal to 0.25.
89. The computer readable medium of claim 86, wherein the method
further comprises, after projecting the second pattern, developing
the resist layer and the developable material layer to form an
image of the first and second patterns in the developable material
layer.
90. The computer readable medium of claim 86, wherein a period
between features of the first pattern and a period between features
of the second pattern is substantially the same.
Description
[0001] This application is a continuation of U.S. patent
application Ser. No. 11/177,490, which was filed on Jul. 11, 2005,
which is a continuation-in-part of U.S. patent application Ser. No.
11/086,664, which was filed on Mar. 23, 2005. The contents of each
of the foregoing applications is incorporated herein in its
entirety by reference.
FIELD
[0002] The present invention relates to a lithographic cluster and
a method of making a device and enhancing image resolution in a
lithographic cluster.
BACKGROUND
[0003] A lithographic apparatus is a machine that applies a desired
pattern onto a target portion of a substrate. Lithographic
apparatus can be used, for example, in the manufacture of
integrated circuits (ICs). In that circumstance, a patterning
device, which is alternatively referred to as a mask or a reticle,
may be used to generate a circuit pattern corresponding to an
individual layer of the IC, and this pattern can be imaged onto a
target portion (e.g., comprising part of, one or several dies) on a
substrate (e.g., a silicon wafer) that has a layer of
radiation-sensitive material (resist). In general, a single
substrate will contain a network of adjacent target portions that
are successively exposed. Known lithographic apparatus include
so-called steppers, in which each target portion is irradiated by
exposing an entire pattern onto the target portion at one time, and
so-called scanners, in which each target portion is irradiated by
scanning the pattern through the projection beam in a given
direction (the "scanning"-direction) while synchronously scanning
the substrate parallel or anti-parallel to this direction.
[0004] Development of new apparatus and methods in lithography have
led to improvements in resolution of the imaged features, such as
lines and contact holes or vias, patterned on a substrate, possibly
leading to a resolution of less than 50 nm. This may be
accomplished, for example, using relatively high numerical aperture
(NA) projection systems (greater than 0.75 NA), a wavelength of 193
nm or less, and a plethora of techniques such as phase shift masks,
non-conventional illumination and advanced photoresist
processes.
[0005] However, certain small features such as contact holes are
especially difficult to fabricate. The success of manufacturing
processes at sub-wavelength resolutions will rely on the ability to
print low modulation images or the ability to increase the image
modulation to a level that will give acceptable lithographic
yield.
[0006] Typically, the industry has used the Rayleigh criterion to
evaluate the critical dimension (CD) and depth of focus (DOF)
capability of a process. The CD and DOF measures can be given by
the following equations:
CD=k.sub.1(.lamda./NA),
and
DOF=k.sub.2(.lamda./NA.sup.2),
where .lamda. is the wavelength of the illumination radiation,
k.sub.1 and k.sub.2 are constants for a specific lithographic
process, and NA is the numerical aperture.
[0007] Additional measures that provide insight into the
difficulties associated with lithography at the resolution limit
include the Exposure Latitude (EL), the Dense:Isolated Bias (DIB)
(also known as iso-dense bias), and the Mask Error Enhancement
Factor (MEEF). The exposure latitude describes the percentage dose
range where the printed pattern's critical dimension (CD) is within
acceptable limits. For example, the exposure latitude may be
defined as the change in exposure dose that causes a 10% change in
printed line width. Exposure Latitude is a measure of reliability
in printing features in lithography. It is used along with the DOF
to determine the process window, i.e., the regions of focus and
exposure that keep the final resist profile within prescribed
specifications. Dense:Isolated Bias (also known as iso-dense bias)
is a measure of the size difference between similar features,
depending on the pattern density. Finally, the MEEF describes how
patterning device CD errors are transmitted into substrate CD
errors.
[0008] Among the trends in lithography is to reduce the CD by
lowering the wavelength used, increasing the numerical aperture,
and/or reducing the value of k1. However, increasing the numerical
aperture would also lead to a decrease in the DOF which ultimately
could lead to limitations in process latitude. This can also be
understood by combining the above two equations to obtain:
DOF=(k.sub.2/k.sub.1.sup.2)(CD.sup.2/.lamda.).
[0009] From this equation it can be seen that a decrease in CD,
i.e., an increase in resolution, would lead to a decrease in DOF
which is unwanted in most lithographic processes and specifically
in the process of printing contact holes.
[0010] In a simplified approximation of coherent illumination, the
resolution of a lithography system is also conventionally quoted in
terms of the smallest half-pitch of a grating that is resolvable as
a function of wavelength and numerical aperture NA. For
conventional optical lithography, the ultimate resolution limit is
reached at k.sub.1=0.5. Imaging with properties similar to a
two-beam interference system allows to extend the ultimate
resolution limit to the k.sub.1=0.25 level.
SUMMARY
[0011] According to an aspect of the present invention, there is
provided a method for enhancing image resolution in a lithographic
cluster. The method includes coating a surface of a substrate with
a developable material layer, coating a first resist layer on top
of the developable material layer and projecting a first pattern
onto an area of the substrate coated with the developable material
layer and the first resist layer. The method further includes
coating a second resist layer on top of the developable material
layer, and projecting a second pattern onto an area of the
substrate coated with the developable material layer and the second
resist layer. Projecting the first pattern and projecting the
second pattern produces a desired patterned image on the
developable material layer.
[0012] According to another aspect of the present invention there
is provided a method for manufacturing a device. The method
includes projecting a first pattern onto an area of a substrate
coated with a developable material layer and a first resist layer
and projecting a second pattern onto an area of the substrate
coated with the developable material layer and a second resist
layer, wherein projecting the first pattern and projecting the
second pattern produces a desired patterned image on the
developable material layer.
[0013] According to yet another aspect of the present invention,
there is provided a lithographic cluster including a coating
station configured to apply a developable material layer onto a
substrate and to apply a first and a second resist layer on top of
the developable material layer and a projection apparatus
configured to project a first pattern of a first patterning device
onto the substrate and to project a second pattern of a second
patterning device onto the substrate. The first pattern and the
second pattern are combined to produce a desired patterned image on
the substrate.
[0014] Although specific reference may be made in this text to the
use of lithographic apparatus in the manufacture of ICs, it should
be understood that the lithographic apparatus described herein may
have other applications, such as the manufacture of integrated
optical systems, guidance and detection patterns for magnetic
domain memories, liquid-crystal displays (LCDs), thin-film magnetic
heads, etc. The skilled artisan will appreciate that, in the
context of such alternative applications, any use of the terms
"wafer" or "die" herein may be considered as synonymous with the
more general terms "substrate" or "target portion," respectively.
The substrate referred to herein may be processed, before or after
exposure, in for example a track (a tool that typically applies a
layer of resist to a substrate and develops the exposed resist) or
a metrology or inspection tool. Where applicable, the disclosure
herein may be applied to such and other substrate processing tools.
Further, the substrate may be processed more than once, for example
in order to create a multi-layer IC, so that the term substrate
used herein may also refer to a substrate that already contains
multiple processed layers.
[0015] The terms "radiation" and "beam" used herein encompass all
types of electromagnetic radiation, including ultraviolet (UV)
radiation (e.g., having a wavelength of 365, 248, 193, 157 or 126
nm) and extreme ultra-violet (EUV) radiation (e.g., having a
wavelength in the range of 5-20 nm), as well as particle beams,
such as ion beams or electron beams.
[0016] The term "patterning device" used herein should be broadly
interpreted as referring to any device that can be used to impart a
beam with a pattern in its cross-section such as to create a
pattern in a target portion of the substrate. It should be noted
that the pattern imparted to the beam may not exactly correspond to
the desired pattern in the target portion of the substrate.
Generally, the pattern imparted to the beam will correspond to a
particular functional layer in a device being created in the target
portion, such as an integrated circuit.
[0017] A patterning device may be transmissive or reflective.
Examples of patterning devices include masks, programmable mirror
arrays, and programmable LCD panels. Masks are well known in
lithography, and include mask types such as binary, alternating
phase-shift, and attenuated phase-shift, as well as various hybrid
mask types. An example of a programmable mirror array employs a
matrix arrangement of small mirrors, each of which can be
individually tilted so as to reflect an incoming radiation beam in
different directions; in this manner, the reflected beam is
patterned.
[0018] The support structure holds the patterning device in a way
depending on the orientation of the patterning device, the design
of the lithographic apparatus, and other conditions, such as for
example whether or not the patterning device is held in a vacuum
environment. The support can use mechanical clamping, vacuum, or
other clamping techniques, for example electrostatic clamping under
vacuum conditions. The support structure may be a frame or a table,
for example, which may be fixed or movable as required and which
may ensure that the patterning device is at a desired position, for
example with respect to the projection system. Any use of the terms
"reticle" or "mask" herein may be considered synonymous with the
more general term "patterning device".
[0019] The term "projection system" used herein should be broadly
interpreted as encompassing various types of projection system,
including refractive optical systems, reflective optical systems,
and catadioptric optical systems, as appropriate for example for
the exposure radiation being used, or for other factors such as the
use of an immersion fluid or the use of a vacuum. Any use of the
term "projection lens" herein may be considered as synonymous with
the more general term "projection system."
[0020] The illumination system may also encompass various types of
optical components, including refractive, reflective, and
catadioptric optical components for directing, shaping, or
controlling the beam of radiation, and such components may be
referred to below, collectively or singularly, as a "lens."
[0021] The lithographic apparatus may be of a type having two (dual
stage) or more substrate tables (and/or two or more support
structures). In such "multiple stage" machines the additional
tables may be used in parallel, or preparatory steps may be carried
out on one or more tables while one or more other tables are being
used for exposure.
[0022] The lithographic apparatus may also be of a type wherein a
surface of the substrate is immersed in a liquid having a
relatively high refractive index, e.g., water, so as to fill a
space between a final element of the projection system and the
substrate. Immersion liquids may also be applied to other spaces in
the lithographic apparatus, for example, between the patterning
device and a first element of the projection system. Immersion
techniques are well known in the art for increasing the numerical
aperture of projection systems.
[0023] The methods described herein may be implemented as software,
hardware or a combination. In an embodiment, there is provided a
computer program comprising program code that, when executed on a
computer system, instructs the computer system to perform any or
all of the methods described herein.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] These and other aspects of the invention will become more
apparent and more readily appreciated from the following detailed
description of the present exemplary embodiments of the invention,
taken in conjunction with the accompanying drawings, of which:
[0025] FIG. 1 schematically depicts a lithographic projection
apparatus according to an embodiment of the invention;
[0026] FIG. 2 depicts a typical example of a multiple exposure
approach, using two exposures, for printing contact holes,
according to an embodiment of the present invention;
[0027] FIG. 3 depicts a typical example of a multiple exposure
approach, using two exposures, for printing contact lines,
according to an embodiment of the present invention;
[0028] FIG. 4 shows a flow diagram of a lithographic process
according to an embodiment of the present invention;
[0029] FIGS. 5A-5G depict the state of the substrate after
performing various steps of the process shown in FIG. 4;
[0030] FIG. 6 shows a scanning electron microscope photograph of a
plurality of contact holes formed in a developable material using
the process shown in FIG. 4;
[0031] FIG. 7 shows a scanning electron microscope photograph of a
plurality of lines formed in a developable material using the
process shown in FIG. 4;
[0032] FIG. 8 shows a flow diagram of a lithographic process
according to another embodiment of the present invention;
[0033] FIG. 9 shows a flow diagram of a lithographic process
according to alternative embodiment of the present invention;
and
[0034] FIG. 10 shows a schematic diagram of a lithographic system
according to an embodiment of the present invention.
DETAILED DESCRIPTION
[0035] FIG. 1 schematically depicts a lithographic apparatus
according to a particular embodiment of the invention. The
apparatus includes: [0036] an illumination system (illuminator) IL
adapted to condition a beam PB of radiation (e.g., UV radiation);
[0037] a support structure (e.g., a mask table) MT configured to
hold a patterning device (e.g., a mask) MA and connected to first
positioning device PM configured to accurately position the
patterning device with respect to item PL; [0038] a substrate table
(e.g., a wafer table) WT configured to hold a substrate (e.g., a
resist-coated wafer) W and connected to second positioning device
PW configured to accurately position the substrate with respect to
item PL; and [0039] a projection system (e.g., a refractive
projection lens) PL adapted to image a pattern imparted to the beam
PB by the patterning device MA onto a target portion C (e.g.,
comprising one or more dies) of the substrate W.
[0040] As here depicted, the apparatus is of a transmissive type
(e.g., employing a transmissive mask). Alternatively, the apparatus
may be of a reflective type (e.g., employing a programmable mirror
array of a type as referred to above).
[0041] The illuminator IL receives a beam of radiation from a
radiation source SO. The source and the lithographic apparatus may
be separate entities, for example when the source is an excimer
laser. In such cases, the source is not considered to form part of
the lithographic apparatus and the radiation beam is passed from
the source SO to the illuminator IL with the aid of a beam delivery
system BD comprising for example suitable directing mirrors and/or
a beam expander. In other cases the source may be integral part of
the apparatus, for example when the source is a mercury lamp. The
source SO and the illuminator IL, together with the beam delivery
system BD if required, may be referred to as a radiation
system.
[0042] The illuminator IL may comprise an adjusting device AM for
adjusting the angular intensity distribution of the beam.
Generally, at least the outer and/or inner radial extent (commonly
referred to as .sigma.-outer and .sigma.-inner, respectively) of
the intensity distribution in a pupil plane of the illuminator can
be adjusted. In addition, the illuminator IL generally comprises
various other components, such as an integrator IN and a condenser
CO. The illuminator provides a conditioned beam of radiation,
referred to as the projection beam PB, having a desired uniformity
and intensity distribution in its cross-section.
[0043] The projection beam PB is incident on the patterning device
MA, which is held on the support structure MT. Having traversed the
patterning device MA, the projection beam PB passes through the
projection system PL, which focuses the beam onto a target portion
C of the substrate W. With the aid of the second positioning device
PW and position sensor IF (e.g., an interferometric device), the
substrate table WT can be moved accurately, e.g., so as to position
different target portions C in the path of the beam PB. Similarly,
the first positioning device PM and another position sensor (which
is not explicitly depicted in FIG. 1) can be used to accurately
position the patterning device MA with respect to the path of the
beam PB, e.g., after mechanical retrieval from a mask library, or
during a scan. In general, movement of the support structure MT and
the substrate table WT will be realized with the aid of a
long-stroke module (coarse positioning) and a short-stroke module
(fine positioning), which form part of the one or both of the
positioning devices PM and PW. However, in the case of a stepper
(as opposed to a scanner) the support structure MT may be connected
to a short stroke actuator only, or may be fixed. Patterning device
MA and substrate W may be aligned using patterning device alignment
marks M1, M2 and substrate alignment marks P1, P2. The depicted
apparatus can be used in the following preferred modes:
[0044] 1. In step mode, the support structure MT and the substrate
table WT are kept essentially stationary, while an entire pattern
imparted to the projection beam is projected onto a target portion
C at one time (i.e., a single static exposure). The substrate table
WT is then shifted in the X and/or Y direction so that a different
target portion C can be exposed. In step mode, the maximum size of
the exposure field limits the size of the target portion C imaged
in a single static exposure.
[0045] 2. In scan mode, the support structure MT and the substrate
table WT are scanned synchronously while a pattern imparted to the
projection beam is projected onto a target portion C (i.e., a
single dynamic exposure). The velocity and direction of the
substrate table WT relative to the support structure MT is
determined by the magnification of demagnification and image
reversal characteristics of the projection system PL. In scan mode,
the maximum size of the exposure field limits the width (in the
non-scanning direction) of the target portion in a single dynamic
exposure, whereas the length of the scanning motion determines the
height (in the scanning direction) of the target portion.
[0046] 3. In another mode, the support structure MT is kept
essentially stationary holding a programmable patterning device,
and the substrate table WT is moved or scanned while a pattern
imparted to the projection beam is projected onto a target portion
C. In this mode, generally a pulsed radiation source is employed
and the programmable patterning device is updated as required after
each movement of the substrate table WT or in between successive
radiation pulses during a scan. This mode of operation can be
readily applied to maskless lithography that utilizes a
programmable patterning device, such as a programmable mirror array
of a type as referred to above.
[0047] Combinations and/or variations on the above described modes
of use or entirely different modes of use may also be employed.
[0048] A need exists to achieve finer optical resolutions and
circumvent the theoretical half-pitch lower limit k.sub.1 of 0.25
as this would allow printing smaller and more densely spaced
features without resorting to expensive technologies that employ
shorter wavelengths and/or higher numerical apertures.
[0049] One approach to lowering k1 is by using a double exposure to
expose two complementary images that individually are less
difficult to print but when imaged on the same substrate they
produce a combined image that would have been more difficult to
print otherwise. FIG. 2 illustrates a typical example of this
approach in which a pattern PAT1 with a larger pitch, shown in FIG.
2 as features represented by blank filled circles, is exposed
(first exposure) and projected onto a substrate (not shown). The
substrate is shifted and a second pattern PAT2, shown in FIG. 2 as
features represented as gray filled circles, is exposed (second
exposure) and projected onto the same substrate so that the
features of the second pattern PAT2 fit between the features of the
first pattern PAT1. The two patterns PAT1 and PAT2 are thus
combined, interleaved, or otherwise superimposed, to obtain a
pattern PAT3 which is more densely spaced than patterns PAT1 and
PAT2 taken separately. The second pattern PAT2 can be a same
pattern as the first pattern PAT1 or a different pattern. In other
words, the period between the features of the first pattern PAT1
and the period between the features of the second pattern PAT2, in
X and/or Y directions, can be the same or different. In addition,
features of the first pattern and features of the second pattern
can be the same (for example, contact holes with a same diameter)
or different features (for example, contact holes with different
diameters).
[0050] In another example, the features of the first pattern and/or
second pattern instead of being contact holes, the features of the
first pattern and the second pattern can be lines or posts. FIG. 3
illustrates a first pattern (pattern PAT4) with a larger pitch,
shown in FIG. 3 as lines represented by blank filled rectangles,
which is exposed (first exposure) and projected onto a substrate
(not shown). The substrate is shifted and a second pattern (pattern
PAT5), shown in FIG. 3 as lines represented as gray filled
rectangles, is exposed (second exposure) and projected onto the
same substrate so that the features of the second pattern PAT5 fit
between the features of the first pattern PAT4. Similarly to the
example illustrated in FIG. 2, the two patterns PAT4 and PAT5 are
combined, interleaved, or otherwise superimposed, to obtain a
pattern PAT6 which is more densely spaced than patterns PAT3 and
PAT4 taken separately. In this example, the first pattern PAT4 and
the second pattern PAT5 have similar features, i.e., lines having
equal widths, but shifted relative to each other. However, it must
be appreciated that the second pattern PAT5 can be a same pattern
as the first pattern PAT4 or a different pattern. In other words,
the period between the lines of the first pattern PAT4 and the
period between the lines of the second pattern PAT5, in X and/or Y
directions (depending on the orientation of the lines), can be the
same or different. In addition, the lines of the first pattern and
lines of the second pattern can be the same (for example, lines
with a same width) or different lines (for example, lines with
different widths).
[0051] This double exposure technique can be used to print patterns
that are much more densely spaced allowing imaging below a k1 value
of 0.25. However, printing with a double exposure on a same resist
(on a same substrate) may be difficult as cross-talk between the
two images of patterns PAT1 and PAT2 and between the two images of
patterns PAT4 and PAT5 may occur which may lead to deterioration of
resolution. To prevent cross-talk between the images of the first
pattern (PAT1, PAT4) and the second pattern (PAT2, PAT5) the images
are transferred or held within the substrate.
[0052] However, transferring the images to the same substrate
requires extremely aggressive overlay specifications and additional
process steps. The most common implementation of this double
exposure technique requires etching and cleaning the substrate
between the first and second exposures. The etch and clean steps
are additional steps that may introduce a delay of 24 hours to 48
hours between the first and second exposures. The additional steps
may also introduce additional difficulties in the lithographic
process. The relatively long period between the two exposures may
impact the overlay performance of the lithographic apparatus and
may affect the imaging stability of the lithographic apparatus and
the coat/develop track that is typically linked to the lithographic
apparatus which together are commonly referred to as a lithographic
cluster.
[0053] Furthermore, the additional process steps may be required to
be performed outside the lithographic cluster, i.e., outside the
lithographic apparatus and/or outside the coat/develop track, which
may involve additional labor and thus add cost to the overall
process. In addition, the additional process steps may also
increase tracking requirements to insure that the second exposure
is performed on the same lithographic apparatus so as to maintain
the tightest possible overlay and imaging performance. All these
and other limitations may reduce to a certain extent the
performance of the lithographic process.
[0054] To eliminate the need for the additional process steps
(e.g., etch and clean steps) currently used to implement reduced
pitch double exposure, a developable material layer is applied on a
surface of the substrate prior to applying the resist layer onto
the substrate. In an embodiment of the invention, the developable
material is a developable Bottom Anti-Reflective Coating (BARC)
and/or a wet developable material. A suitable developable BARC
material may be, for example, IMBARC.TM., a coating manufactured by
Brewer Science, Inc, or D-BARC.TM., a coating manufactured by
Clariant Corporation. By using the developable material layer,
e.g., the developable material, the substrate can be kept within
the lithography cluster, i.e., inside the lithographic apparatus
and/or the coat/develop track, during the full cycle of the double
exposure (first and second exposure). As a result, any time delay
that may occur between the first and second exposures can be
significantly reduced. In addition, the use of this developable
material layer can be extended beyond two exposures to include many
exposures.
[0055] FIG. 4 shows a flow diagram of a lithographic process
according to an embodiment of the present invention. The
lithographic process (P30) includes, coating a surface of a
substrate with a developable material layer (P32) and coating a
first resist layer on top of the developable material layer (P34).
The lithographic process (P30) further includes exposing a first
pattern and projecting the first pattern onto the substrate coated
with the developable material layer and the first resist layer
(P36), applying a post exposure bake (P38) and developing the first
resist layer and developable material layer to form an image of the
first pattern on the substrate (in the first resist layer and the
developable material layer) (P40).
[0056] The first resist layer comprises a material that is
sensitive to radiation at a wavelength of exposure radiation. When
the first pattern is exposed and projected onto the substrate
coated with the developable material layer and the first resist
layer, areas of the first resist layer exposed to radiation undergo
chemical and/or physical changes. As a result, in a case of a
positive resist, areas of the first resist layer exposed to
radiation become more soluble to chemical solvents, i.e.
developers, while areas not exposed to radiation remain insoluble.
Developing the first resist layer includes removing the soluble
portion of the first resist layer to form "holes" in the first
resist layer. In a case of a negative resist, areas of the first
resist layer exposed to radiation become more resistant to chemical
solvents/solutions while areas not exposed to radiation remain
soluble. In this case, developing the first resist layer includes
removing the soluble portion of the first resist layer to form
"islands" corresponding to areas of the first resist layer exposed
to radiation.
[0057] The developable material layer may or may not comprise a
material that is sensitive to radiation. If the developable
material layer comprises a material that is sensitive to radiation,
the developable material layer behaves as "a resist layer" in a
sense that exposed areas of the developable material layer undergo
chemical and/or physical changes. In this case, the developable
material layer can be developed in the same way as the first resist
layer. If the developable material layer does not comprise a
material that is sensitive to radiation, i.e. does not have any
radiation-reactive properties, the developable material layer does
not react to radiation and hence does not have any "positive" or
"negative" resist properties. As a result, areas of the developable
material layer lying directly underneath areas of the first resist
layer that have been exposed to radiation (in a case of a positive
resist) or lying directly underneath areas of the first resist
layer that have not been exposed to radiation (in a case of a
negative resist) simply develop away, once the areas of the first
resist layer are removed, by using an appropriate chemical
solvent/solution (for example, an aqueous solution). In other
words, if the developable material layer does not have any
radiation-reactive properties, processing of the developable
material layer will be governed by the development state of the
first resist layer. In either case, i.e. positive resist or
negative resist, the first pattern projected onto the first resist
layer is carried to the developable material layer.
[0058] The lithographic process (P30) proceeds by removing the
first resist layer, for example with wet processing, while the
processed developable material carrying the first pattern is
maintained on the substrate (P42). The removal of the first resist
layer is followed by coating a second resist layer over the
processed developable material layer (P44). In an embodiment of the
invention, removing the first resist layer (P42) and coating the
second resist layer (P44) are carried out in a same area within the
coat/develop track (e.g., a coating bowl).
[0059] The lithographic process (P30) further includes exposing a
second pattern and projecting the second pattern onto the substrate
coated with the developable material layer and the second resist
layer (P46), applying a post exposure bake (P48) and developing the
second resist layer and the developable material layer to form an
image with the second pattern on the substrate (in the second
resist layer and the developable material layer) (P50).
[0060] Similarly to the first resist layer, the second resist layer
may also have positive resist properties or negative resist
properties. In either case, the second pattern projected onto the
second resist layer is carried to the developable material
layer.
[0061] The lithographic process proceeds by removing the second
resist layer, for example with wet processing, while the processed
developable material layer carrying the first and second patterns
is maintained (P52). At point (P53), the substrate can be, for
example, coated with a third resist layer and the processes (P44
and following processes) repeated via a loop in the lithographic
process (P30), or the substrate can be released for further post
lithographic processing (P54). This process loop of applying a
third resist layer and possibly a plurality of subsequent resist
layers can be repeated as desired to achieve a desired image
quality and/or resolution. As previously stated, the second pattern
can be the same pattern as the first pattern or different from the
first pattern. In the case that the second pattern is merely a
shifted version of the first, or otherwise requires and offset,
prior to projecting the second pattern, the substrate is shifted or
offset by a predetermined distance D in the X and/or Y directions
(P45). The predetermined distance D corresponds to the shift
required to adequately image the features of the second pattern on
the second resist layer and developable material layer in order to
superimpose or interleave the second pattern features in between
the features of the already imaged first pattern on the developable
material layer so as to render the desired target pattern.
[0062] The following paragraphs describe the state of the substrate
after the process steps described above are carried out. FIGS.
5A-5G depict a status of a processed substrate after performing the
steps of the lithographic process described above.
[0063] FIG. 5A shows a substrate W having a surface coated with a
developable material layer ML. A first resist layer RES1 is coated
over the developable material layer ML. The substrate W with
developable material layer ML and resist layer RES1 is exposed to a
patterned radiation generated by projecting radiation PB through a
mask MA1 having a first pattern, for example PAT1 or PAT4 shown in
FIGS. 2 and 3.
[0064] FIG. 5B shows the substrate W with the developable material
layer ML and resist layer RES1 both carrying the first pattern
(PAT1, PAT4). The developable material layer ML and first resist
layer RES1 are developed. The exposed areas of the first resist
layer RES1 are removed in the case of a positive resist process. In
the case of a negative resist process, unexposed areas in the
resist layer RES1 are removed. As discussed above, the developable
material layer ML can be sensitive to radiation or non sensitive to
radiation. In the case where the developable material layer ML is
sensitive to radiation, the areas of the developable material layer
ML exposed to radiation are removed in the same way as the exposed
areas of the first resist layer RES1. In the case where the
developable material layer is not sensitive to radiation, once the
exposed areas of the first resist layer RES1 are removed, the areas
of the developable material layer ML lying underneath the exposed
areas of the first resist layer RES1 will follow suit because the
developable material layer ML is dissolvable in a chemical solvent
(for example an aqueous solution).
[0065] As a result, features corresponding to the first pattern
(PAT1, PAT4) are formed in both the first resist layer RES1 and the
developable material layer ML. The features may be voids (as shown
in FIG. 5B) in the case of a positive resist process or "peaks" or
"islands" in the case of a negative resist process (not shown). In
both cases, this results in the first pattern (PAT1, PAT4) being
transferred into the resist layer RES1 and the developable material
layer ML.
[0066] FIG. 5C shows the substrate after removal or stripping of
the first resist layer RES1 but with the developable material layer
ML carrying the first pattern (PAT1, PAT4) remaining. The first
resist layer RES1 is removed while the developable material layer
ML carrying the first pattern (PAT1, PAT4) is maintained on the
substrate W.
[0067] FIG. 5D shows the substrate coated with a second resist
layer RES2. The second resist layer is coated over the developable
material layer ML carrying the first pattern (PAT1, PAT4). As a
result, voids in the developable material layer ML corresponding to
the first pattern (PAT1, PAT4) are filled with the resist material.
Although FIG. 5D shows a substrate on which a positive resist
process is applied, it must be appreciated that the process
discussed herein may be applied to a negative resist process. In a
negative resist process, the second resist layer RES2 is coated
over the developable material layer ML to fill the voids
corresponding to complements of the "peak or island" features.
[0068] FIG. 5E shows the substrate W with a surface coated with the
developable material layer ML and the second resist layer RES2. The
substrate W with developable material layer ML and exposed areas of
resist layer RES2 is exposed to a patterned radiation generated by
projecting radiation PB through a mask MA2 having a second pattern
(PAT2, PAT5). The second pattern (PAT2, PAT5) can be the same as
the first pattern (PAT1, PAT4) or different from the first pattern
(PAT1, PAT4). In an embodiment of the invention, prior to
projecting the second pattern (PAT2, PAT5), the substrate W is
shifted or offset by a predetermined distance D in the X and/or Y
directions. The predetermined distance D corresponds to the shift
required to adequately image the features of the second pattern
(PAT2, PAT5) on the resist layer RES2 in order to superimpose the
second pattern (PAT2, PAT5) features in between the features of the
already-imaged first pattern (PAT1, PAT4) so as to render the
desired target.
[0069] FIG. 5F shows the substrate W after the developable material
layer ML and resist layer RES2, both carrying the second pattern
(PAT2, PAT5), are developed by removing the exposed areas in the
resist layer RES2, in the case of a positive resist process or by
removing unexposed areas in the resist layer RES2 in the case of a
negative resist process. As discussed above, the developable
material layer ML can be sensitive or not sensitive to radiation.
In the case where the developable material layer ML is sensitive to
radiation, the areas of the developable material layer ML exposed
to radiation are removed in the same way as the exposed areas of
the first resist layer RES2. In the case where the developable
material layer is not sensitive to radiation, once the exposed
areas of the second resist layer RES2 are removed, the areas of the
developable material layer ML lying underneath the exposed areas of
the second resist layer RES2 will follow suit because the
developable material layer ML is dissolvable in a chemical solvent
(for example an aqueous solution).
[0070] As a result, features corresponding to the second pattern
(PAT2, PAT5) are formed in both the second resist layer RES2 and
the developable material layer ML. The features may be voids (as
shown in FIG. 5F) in the case of a positive resist process or
"peaks" or "islands" in the case of a negative resist process (not
shown). In this way, the second pattern (PAT2, PAT5) is transferred
into the resist layer RES2 and the developable material layer
ML.
[0071] FIG. 5G shows the substrate after removal of the second
resist layer RES2. The second resist layer RES2 is removed while
the developable material layer ML carrying both the first and the
second patterns is maintained on the substrate W. The obtained
substrate W with the developable material layer ML carries the
desired pattern which is a combination of the first pattern (PAT1,
PAT4) and second pattern (PAT2, PAT5). The obtained substrate is
thus prepared for further processing which may include, additional
repetitions of the lithographic process described herein or for
example, etching, ion-implantation (doping), metallization,
oxidation, chemical, mechanical polishing, etc.
[0072] In an embodiment of the invention, a thickness of the
developable material layer ML is between 400 .ANG. (40 nm) and 1200
.ANG. (120 nm). In embodiment of the invention, the thickness of
the developable material layer is selected to be equal to 800 .ANG.
(80 nm). By applying a layer of developable material having a
thickness between 40 nm and 120 nm, for example equal to 80 nm, a
near isotropic development of a feature (for example, a contact
hole, a line, a post, a trench or a combination thereof) in the
developable material layer ML can be achieved.
[0073] FIG. 6 shows a Scanning Electron Microscope (SEM) photograph
of a plurality of contact holes imaged in a developable material
using the process described herein. In this example, the second
pattern is different from the first pattern. Specifically, the
diameter of the contact holes of the first pattern is smaller than
the diameter of the holes of the second pattern. This is done
merely for easily distinguishing between the contact holes imaged
with the first pattern and contact holes imaged with the second
pattern. It should be appreciated that any combination of patterns
can be imaged using the process described herein. This example
demonstrates that the process discussed herein can be used to print
patterns that are much more densely spaced than would have been
possible by only using one pattern, thus allowing imaging below a
k1 value of 0.25.
[0074] FIG. 7 shows a Scanning Electron Microscope (SEM) photograph
of a plurality of dense lines imaged in a developable material
using the process described herein. In this example, the dense
lines are imaged with a half-pitch of 70 nm, a numerical aperture
NA equal to 0.8 and using a radiation at a wavelength of 248 nm.
This example demonstrates that the process or processes discussed
herein can be used to print patterns that are much more densely
spaced than would have been possible by only using one pattern,
thus, allowing imaging at a k1 value of 0.23, i.e., a k1 value
lower than 0.25. Furthermore, this example, shows that the process
or processes described herein can be used to "image" various
patterns including, but not limited to, contact holes, lines,
posts, trenches etc. . . . .
[0075] FIG. 8 shows a flow diagram of a lithographic process
according to another embodiment of the present invention. The
lithographic process (P60) includes, coating a surface of a
substrate with a developable material layer (P62) and coating a
resist layer on top of the developable material layer (P64). The
lithographic process (P60) further includes exposing a first
pattern and projecting the first pattern onto the substrate coated
with the developable material layer and the resist layer (P66) and
applying a post exposure bake (P68).
[0076] The lithographic process (P30) further includes exposing a
second pattern and projecting the second pattern onto the substrate
coated with the developable material layer and the resist layer
(P70) and applying a post exposure bake (P72).
[0077] At point (P73), the substrate can be, for example, exposed
to a third pattern if desired and a post exposure bake applied to
the substrate by repeating the processes (P70 and P72) via a loop
in the lithographic process (P60). This process loop of exposing a
third pattern and possibly a plurality of patterns can be repeated
as desired to achieve a desired image quality and/or resolution.
The second pattern can be the same pattern as the first pattern or
different from the first pattern. Similarly, the third pattern can
be the same as the second and/or first pattern or different from
the first and/or the second pattern. For example, in the case that
the second pattern is merely a shifted version of the first
pattern, or otherwise requires and offset, prior to projecting the
second pattern, the substrate is shifted or offset by a
predetermined distance D in the X and/or Y directions (P69). The
predetermined distance D corresponds to the shift required to
adequately image the features of the second pattern on the second
resist layer and developable material layer in order to superimpose
or interleave the second pattern features in between the features
of the already imaged first pattern on the developable material
layer so as to render the desired target pattern. This shifting of
the substrate can also be applied when projecting the third pattern
so as to superpose or interleave third pattern features in between
the features of the first and second pattern.
[0078] When the exposure of the first pattern, second pattern and
possibly the third pattern and following post exposure bake is
finished, the lithographic process (P60) progresses by developing
the resist layer and the developable material layer to form an
image with the first and the second pattern (and a third pattern
and possibly other patterns as desired) on the substrate (in the
resist layer and the developable material layer) (P74). The
lithographic process (P60) then proceeds by removing the resist
layer, for example with wet processing, while the processed
developable material layer carrying the first and second (and
possibly third) patterns is maintained (P76). At this point of the
lithographic process, the substrate carrying the developable
material can be sent for further processing (P78).
[0079] FIG. 9 shows a flow diagram of a lithographic process
according to an alternative embodiment of the present invention.
The lithographic process (P80) includes, coating a surface of a
substrate with a developable material layer (P82) and coating a
resist layer on top of the developable material layer (P84). The
lithographic process (P60) further includes exposing a first
pattern and projecting the first pattern onto the substrate coated
with the developable material layer and the resist layer (P86),
applying a post exposure bake (P88) and developing the resist layer
and the developable material layer to form an image of the first
pattern on the substrate, in the resist layer and the developable
material layer (P90).
[0080] The lithographic process (P80) further includes exposing a
second pattern and projecting the second pattern onto the substrate
coated with the developable material layer and the resist layer
(P92), applying a post exposure bake (P94) and developing the
resist layer and the developable material layer to form an image of
the second pattern on the substrate, in the resist layer and the
developable material layer (P96).
[0081] At point (P97), the substrate can be, for example, exposed
to a third pattern if desired and a post exposure bake applied to
the substrate followed with developing the resist layer and the
developable material layer by repeating the processes (P92, P94 and
P96) via a loop in the lithographic process (P80). This process
loop of exposing a third pattern can be repeated as desired to
achieve a desired image quality and/or resolution. The second
pattern can be the same pattern as the first pattern or different
from the first pattern. Similarly, the third pattern can be the
same as the second and/or first pattern or different from the first
and/or the second pattern. For example, in the case that the second
pattern is merely a shifted version of the first pattern, or
otherwise requires and offset, prior to projecting the second
pattern, the substrate is shifted or offset by a predetermined
distance D in the X and/or Y directions (P91). The predetermined
distance D corresponds to the shift required to adequately image
the features of the second pattern on the second resist layer and
developable material layer in order to superimpose or interleave
the second pattern features in between the features of the already
imaged first pattern so as to render the desired target pattern.
This shifting of the substrate can also be applied when projecting
the third pattern so as to superpose or interleave third pattern
features in between the features of the first and second pattern.
The lithographic process (P80) then proceeds by removing the resist
layer, for example with wet processing, while the processed
developable material layer carrying the first and second (and
possibly third) patterns is maintained (P98). At this point of the
lithographic process, the substrate carrying the developable
material can be sent for further processing (P99).
[0082] FIG. 10 schematically depicts an integrated lithographic
fabrication cluster system constructed and operative in accordance
with a particular embodiment of the present invention. As
illustrated, lithographic cluster 600 includes lithographic
exposure apparatus 602, substrate handling apparatus 603, and
coat/develop track apparatus 604.
[0083] Lithographic exposure apparatus 602 is configured to project
a first pattern of a first patterning device onto the substrate and
to project additional patterns of an additional patterning devices
onto the substrate. An example of lithographic projection apparatus
602 is depicted in FIG. 1 and is described in detail in the
previous paragraphs.
[0084] Coat/develop track apparatus 604 is configured to perform
pre-exposure processes including, but not limited to, priming,
anti-reflective coating, wet developable material coating, resist
coating, soft bake processes, and measurement processes.
Coat/develop track apparatus 604 is also configured to perform post
exposure processes including, but not limited to, post exposure
bake (PEB), development, resist removal, and measurement processes.
In performing these pre- and post-exposure processes, a number of
processing stations or modules 604.sub.a1-604.sub.k1 are
incorporated within the wafer track apparatus 604. These processing
modules 604.sub.a1-604.sub.k1 may include Chill Plates, Bake
Plates, Coater modules, Developer modules, Priming modules, Resist
removal modules (Resist stripping modules), and Metrology modules.
Multiple modules of any given type 604.sub.a1-604.sub.a#. may be
included within wafer track apparatus 604 to increase throughput.
In an embodiment of the invention the coat/develop track apparatus
604 is configured to deposit the wet developable material and
resist material to the substrate prior to exposure as many times as
required. The coat/develop track apparatus 604 is also configured
to perform post exposure substrate processing including, post
exposure bake, develop, hard bake, and resist removal processes as
many times as required.
[0085] Substrate handling apparatus 603 is configured to transport
the wafer substrates W, in a pre-specified order, between
processing modules 604.sub.a1-604.sub.k1 of coat/develop apparatus
604 and exposure apparatus 602. Substrate handling apparatus 603
may include robotic, conveyor, or track mechanisms or combinations
there from to support the delivery and/or retrieval of wafer
substrates from processing modules 604.sub.a1-604.sub.k1. Because
coat/develop apparatus 604 includes a number of processing modules
204.sub.a1-204.sub.k#, all of these modules require the support of
substrate handling apparatus 603 to load and unload the substrates
W from the individual modules.
[0086] In an embodiment of the invention, for example, the
substrate is coated with the developable material, baked, chilled,
coated with the resist material, baked, and chilled within the
coat/develop apparatus 604 and then transferred to the lithographic
exposure apparatus 602. The substrate including the first process
layer is exposed within the lithographic exposure apparatus 602 and
transferred to the coat/develop apparatus 604 for post exposure
processing. The coat/develop apparatus 604 applies a post exposure
bake, develop the first resist layer, and remove the first resist
layer. During this process all substrate handling and
transportation is performed by the substrate handling apparatus
603. After processing the substrate in this way, the substrate may
then be maintained within the coat/develop apparatus 604 and
returned to the coating station, for example, to apply a second
resist layer on top of the material layer (for example a
developable material layer). The process of exposure in
lithographic apparatus 602 is repeated and the substrate is
returned to the coat/develop apparatus 604 for post exposure
processing including post exposure bake, develop, and resist
removal, before sending the substrate for further processing within
the lithographic cluster or for further external process as
indicated schematically by the arrow to external.
[0087] In an embodiment, there is provided a method for enhancing
image resolution in a lithographic cluster, comprising: coating a
surface of substrate with a developable material layer; coating a
first resist layer on top of the developable material layer;
projecting a first pattern onto an area of the substrate coated
with the developable material layer and the first resist layer;
applying a post exposure bake to the substrate having the first
pattern in the first resist layer and the developable material
layer; developing the first resist layer and the developable
material layer to form an image of the first pattern in the
developable material layer; removing the first resist layer;
coating a second resist layer on top of the developable material
layer; and projecting a second pattern onto an area of the
substrate coated with the developable material layer and the second
resist layer, wherein projecting the first pattern and projecting
the second pattern produces a desired image in the developable
material layer.
[0088] In an embodiment, the desired image comprises patterned
features with a half-pitch corresponding to a k1 less than or equal
to 0.25. In an embodiment, the developable material layer comprises
at least one of a wet developable material and a developable bottom
anti-reflective material. In an embodiment, the method further
comprises exposing a first patterning device comprising the first
pattern by directing a beam of radiation through the first pattern.
In an embodiment, removing the first resist layer and coating the
second resist layer are performed in a same area of the
lithographic cluster. In an embodiment, the lithographic cluster
comprises a lithographic apparatus and a coat/develop track system.
In an embodiment, the method further comprises exposing a second
patterning device comprising the second pattern by directing a beam
of radiation through the second pattern. In an embodiment, the
method further comprises: after projecting the second pattern,
applying a post exposure bake to the substrate having the second
pattern in the second resist layer and the developable material
layer; developing the second resist layer and the developable
material layer to form an image of the second pattern in the
developable material layer; and removing the second resist layer.
In an embodiment, the method further comprises: coating a third
resist layer on top of the developable material layer; and
projecting a third pattern onto an area of the substrate coated
with the developable material layer and the third resist layer,
wherein projecting the first pattern, projecting the second pattern
and projecting the third pattern produces a desired image in the
developable material layer. In an embodiment, the method further
comprises: prior to projecting the second pattern, shifting the
substrate in the lithographic cluster by a predetermined distance
so as to interleave an image of the second pattern with an image of
the first pattern. In an embodiment, the first pattern and the
second pattern are substantially the same. In an embodiment, a
period between features of the first pattern and a period between
features of the second pattern is substantially the same. In an
embodiment, features of the first pattern and features of the
second pattern are substantially different. In an embodiment, the
first pattern comprises features for printing contact holes,
trenches, lines, posts or a combination thereof. In an embodiment,
the second pattern comprises features for printing contact holes,
trenches, lines, posts or a combination thereof. In an embodiment,
a thickness of the developable material layer is between 40 nm and
120 nm. In an embodiment, the thickness of the developable material
layer is selected to be 80 nm. In an embodiment, the thickness of
the developable material layer is selected to achieve a near
isotropic development of a feature in the developable material
layer.
[0089] In an embodiment, there is provided a method for enhancing
image resolution in a lithographic cluster, comprising: coating a
surface of substrate with a developable material layer; coating a
resist layer on top of the developable material layer; projecting a
first pattern onto an area of the substrate coated with the
developable material layer and the resist layer; applying a first
post exposure bake to the substrate having the first pattern in the
resist layer and the developable material layer; projecting a
second pattern onto an area of the substrate coated with the
developable material layer and the resist layer; and applying a
second post exposure bake to the substrate having the second
pattern in the resist layer and the developable material layer,
wherein projecting the first pattern and the second pattern and
applying the first post exposure bake and the second post exposure
bake produces a desired image on the developable material
layer.
[0090] In an embodiment, the desired image comprises patterned
features with a half-pitch corresponding to a k1 less than or equal
to 0.25. In an embodiment, the developable material layer comprises
at least one of a wet developable material and a developable bottom
anti-reflective material. In an embodiment, the lithographic
cluster comprises a lithographic apparatus and a coat/develop track
system. In an embodiment, the method further comprises, prior to
projecting the second pattern, shifting the substrate in the
lithographic cluster by a predetermined distance so as to
interleave an image of the second pattern with an image of the
first pattern. In an embodiment, the method further comprises:
projecting a third pattern onto an area of the substrate coated
with the developable material layer and the resist layer, wherein
projecting the first pattern, projecting the second pattern and
projecting the third pattern produces a desired image in the
developable material layer. In an embodiment, the method further
comprises, prior to projecting the third pattern, shifting the
substrate in the lithographic cluster by a predetermined distance
so as to interleave an image of the third pattern with an image of
the first and second patterns. In an embodiment, the method further
comprises: developing the resist layer and the developable material
layer to form an image of the first and second patterns in the
developable material layer; and removing the resist layer. In an
embodiment, the first pattern and the second pattern are
substantially the same. In an embodiment, a period between features
of the first pattern and a period between features of the second
pattern is substantially the same. In an embodiment, features of
the first pattern and features of the second pattern are
substantially different. In an embodiment, the first pattern
comprises features for printing contact holes, trenches, lines,
posts or a combination thereof. In an embodiment, the second
pattern comprises features for printing contact holes, trenches,
lines, posts or a combination thereof.
[0091] In an embodiment, there is provided a method for enhancing
image resolution in a lithographic cluster, comprising: coating a
surface of substrate with a developable material layer; coating a
resist layer on top of the developable material layer; projecting a
first pattern onto an area of the substrate coated with the
developable material layer and the resist layer; applying a first
post exposure bake to the substrate having the first pattern in the
resist layer and the developable material layer; developing the
resist layer and the developable material layer to form an image of
the first pattern in the developable material layer; projecting a
second pattern onto an area of the substrate coated with the
developable material layer and the resist layer; applying a second
post exposure bake to the substrate having the second pattern in
the resist layer and the developable material layer; and developing
the resist layer and the developable material layer to form an
image of the second pattern in the developable material layer,
wherein projecting the first pattern and the second pattern,
applying the first post exposure bake and the second post exposure
bake and developing the resist layer and the developable material
layer produces a desired image in the developable material
layer.
[0092] In an embodiment, the desired image comprises patterned
features with a half-pitch corresponding to a k1 less than or equal
to 0.25. In an embodiment, the developable material layer comprises
at least one of a wet developable material and a developable bottom
anti-reflective material. In an embodiment, the lithographic
cluster comprises a lithographic apparatus and a coat/develop track
system. In an embodiment, the method further comprises: projecting
a third pattern onto an area of the substrate coated with the
developable material layer and the resist layer, wherein projecting
the first pattern, projecting the second pattern and projecting the
third pattern produces a desired image in the developable material
layer. In an embodiment, the method further comprises: prior to
projecting the third pattern, shifting the substrate in the
lithographic cluster by a predetermined distance so as to
interleave an image of the third pattern with an image of the first
and second patterns. In an embodiment, the method further
comprises: after developing the resist layer and the developable
material layer to form an image of the second pattern in the
developable material layer, removing the resist layer. In an
embodiment, the first pattern and the second pattern are
substantially the same. In an embodiment, a period between features
of the first pattern and a period between features of the second
pattern is substantially the same. In an embodiment, features of
the first pattern and features of the second pattern are
substantially different. In an embodiment, the first pattern
comprises features for printing contact holes, trenches, lines,
posts or a combination thereof. In an embodiment, the second
pattern comprises features for printing contact holes, trenches,
lines, posts or a combination thereof.
[0093] In an embodiment, there is provided a lithographic cluster
comprising: a coating station configured to apply a developable
material layer onto a substrate and to apply a first and a second
resist layer on top of the developable material layer; a projection
apparatus configured to project a first pattern of a first
patterning device onto the substrate and to project a second
pattern of a second patterning device onto the substrate, wherein
the first pattern and the second pattern are combined to produce a
desired patterned image on the substrate.
[0094] In an embodiment, the desired patterned image comprises
patterned features with a half-pitch corresponding to a k1 less
than or equal to 0.25. In an embodiment, the developable material
layer comprises a developable bottom anti-reflective layer. In an
embodiment, the lithographic cluster further comprises a processing
station configured to apply a post exposure bake to the substrate,
to develop the first resist layer, the second resist layer and the
developable material layer, and to remove the first resist layer
and the second resist layer. In an embodiment, the processing
station comprises a baking station configured to apply a first post
exposure bake after projection of the first pattern and to apply a
second post exposure bake after projection of the second pattern.
In an embodiment, the processing station comprises a developing
station configured to develop the first resist layer and the
developable material layer after the first exposure bake, to
develop the second resist layer and the developable material layer
after the second post exposure bake. In an embodiment, the
processing station comprises a stripping station configured to
remove the first resist layer and to remove the second resist
layer. In an embodiment, the stripping station and the coating
station are located in substantially a same location in the
lithographic cluster. In an embodiment, the stripping station and
the coating station are located in a coat/develop track system of
the lithographic cluster. In an embodiment, the first pattern of
the first patterning device and the second pattern of the second
patterning device are substantially the same. In an embodiment,
features of the first pattern and features of the second pattern
are substantially different. In an embodiment, the first pattern
comprises features for printing contact holes, trenches, lines,
posts and a combination thereof. In an embodiment, the second
pattern comprises features for printing contact holes, trenches,
lines, posts and a combination thereof.
[0095] In an embodiment, there is provided a method for
manufacturing a device in a lithographic cluster, comprising:
projecting a first pattern onto an area of a substrate coated with
a developable material layer and a first resist layer; projecting a
second pattern onto an area of the substrate coated with the
developable material layer and a second resist layer; wherein
projecting the first pattern and projecting the second pattern
produces a desired patterned image on the developable material
layer.
[0096] In an embodiment, the desired patterned image comprises
patterned features with a half-pitch corresponding to a k1 less
than or equal to 0.25. In an embodiment, the developable material
layer comprises a developable bottom anti-reflective layer. In an
embodiment, the method further comprises exposing a first
patterning device comprising the first pattern by directing a beam
of radiation through the first pattern. In an embodiment, the
method further comprises: applying a post exposure bake to the
substrate having the first pattern on the first resist layer and
the developable material layer; developing the first resist layer
and the developable material layer to form an image of the first
pattern on the developable material layer; and removing the first
resist layer. In an embodiment, the method further comprises
exposing a second patterning device comprising the second pattern
by directing the beam of radiation through the second pattern. In
an embodiment, the method further comprises: applying a post
exposure bake to the substrate having the second pattern on the
second resist layer and the developable material layer; developing
the second resist layer and the developable material layer to form
an image of the second pattern on the developable material layer;
and removing the second resist layer. In an embodiment, the method
further comprises: prior to projecting the second pattern, shifting
the substrate in the lithographic cluster by a predetermined
distance so as to interleave an image of the second pattern with an
image of the first pattern. In an embodiment, the first pattern and
the second pattern are substantially the same. In an embodiment, a
period between features of the first pattern and a period between
features of the second pattern is substantially the same. In an
embodiment, features of the first pattern and features of the
second pattern are substantially different. In an embodiment, the
first pattern comprises features for printing contact holes,
trenches, lines, posts or a combination thereof. In an embodiment,
the second pattern comprises features for printing contact holes,
trenches, lines, posts or a combination thereof. In an embodiment,
the method further comprises: projecting a third pattern onto an
area of the substrate coated with the developable material layer
and a third resist layer; wherein projecting the first pattern,
projecting the second pattern and projecting the third pattern
produces a desired patterned image on the developable material
layer.
[0097] Since numerous modifications and changes will readily occur
to those of skill in the art, it is not desired to limit the
invention to the exact construction and operation described herein.
For example, while developable material is discussed herein as a
suitable material to apply on the substrate before applying a first
resist layer or a second resist layer, it should be appreciated
that other materials and/or configurations, for example using a
negative resist process, are also contemplated.
[0098] Moreover, the process, method and apparatus of the present
invention, like related apparatus and processes used in the
lithographic arts, tend to be complex in nature and are often best
practiced by empirically determining the appropriate values of the
operating parameters or by conducting computer simulations to
arrive at a best design for a given application. Accordingly, all
suitable modifications and equivalents should be considered as
falling within the spirit and scope of the invention.
* * * * *