U.S. patent application number 13/072663 was filed with the patent office on 2011-09-29 for method for cleaning low-k dielectrics.
This patent application is currently assigned to TOKYO ELECTRON LIMITED. Invention is credited to Junjun LIU, Dorel I. TOMA, Hongyu YUE.
Application Number | 20110232677 13/072663 |
Document ID | / |
Family ID | 44654944 |
Filed Date | 2011-09-29 |
United States Patent
Application |
20110232677 |
Kind Code |
A1 |
LIU; Junjun ; et
al. |
September 29, 2011 |
Method for cleaning low-k dielectrics
Abstract
A method and system for treating a substrate and, in particular,
a method and system for cleaning a low dielectric constant (low-k)
dielectric film to remove, among other things, undesired residue is
described. The method includes irradiating a region on a substrate
containing one or more layers or structures with infrared (IR)
radiation and optionally ultraviolet (UV) radiation to remove
material or undesired residues from the one or more layers or
structures. Furthermore, the method may optionally include exposing
at least a portion of the region to a gas or vapor jet emanating
from a gas nozzle along a jet axis in a direction towards the
substrate.
Inventors: |
LIU; Junjun; (Austin,
TX) ; TOMA; Dorel I.; (Dripping Springs, TX) ;
YUE; Hongyu; (Plano, TX) |
Assignee: |
TOKYO ELECTRON LIMITED
Tokyo
JP
|
Family ID: |
44654944 |
Appl. No.: |
13/072663 |
Filed: |
March 25, 2011 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
61318719 |
Mar 29, 2010 |
|
|
|
Current U.S.
Class: |
134/1 ;
156/345.27; 156/345.33 |
Current CPC
Class: |
H01L 21/67115 20130101;
B08B 7/005 20130101; Y10S 430/145 20130101; B08B 7/0057 20130101;
B08B 7/0042 20130101; H01L 21/67028 20130101 |
Class at
Publication: |
134/1 ;
156/345.33; 156/345.27 |
International
Class: |
B08B 7/00 20060101
B08B007/00; B08B 13/00 20060101 B08B013/00 |
Claims
1. A method of cleaning a substrate, comprising: irradiating a
region on a substrate containing one or more layers or structures
with infrared (IR) radiation and optionally ultraviolet (UV)
radiation to remove material or undesired residues from said one or
more layers or structures.
2. The method of claim 1, further comprising: exposing at least a
portion of said region to a gas or vapor jet emanating from a gas
nozzle along a jet axis in a direction towards said substrate.
3. The method of claim 2, wherein said gas or vapor jet is selected
to be reactive with at least a portion of said region.
4. The method of claim 2, wherein said gas or vapor jet comprises
He, Ne, Ar, Kr, Xe, N.sub.2, H.sub.2, NH.sub.3, CO, CO.sub.2, or
O.sub.2, or any combination of two or more thereof.
5. The method of claim 2, wherein said IR radiation comprises an IR
beam having a beam spot on said substrate and said IR beam
intersecting with said jet axis at said beam spot.
6. The method of claim 2, wherein said exposing follows said
irradiating or said exposing is simultaneous with said
irradiating.
7. The method of claim 1, wherein said one or more layers or
structures includes a patterned structure formed using a patterned
mask layer and an etching process.
8. The method of claim 1, wherein said one or more layers or
structures comprises a low-k layer, an ultra low-k layer, a
photo-resist layer, an anti-reflective coating (ARC) layer, an
organic planarization layer (OPL), a soft mask layer, or a hard
mask layer, or any combination of two or more thereof.
9. The method of claim 1, wherein said irradiating includes IR
irradiation simultaneous with said optional UV radiation, preceded
by said optional UV radiation, or followed by said optional UV
irradiation, or any combination of two or more thereof.
10. The method of claim 1, wherein said IR radiation contains
substantially monochromatic electromagnetic (EM) radiation having a
narrow band of wavelengths.
11. The method of claim 1, wherein said IR radiation comprises an
IR laser.
12. The method of claim 1, further comprising: selecting a spectral
content for said IR radiation, said spectral content chosen to
cause absorption in at least a portion of remnants of said one or
more layers or structures, or at least a portion of said material
or undesired residues to be removed.
13. The method of claim 1, wherein said IR radiation comprises IR
emission ranging between about 8 microns and about 12 microns.
14. The method of claim 1, further comprising: maintaining a
substrate temperature at a temperature between about 20 degrees C.
and about 250 degrees C.
15. The method of claim 1, wherein said optional UV radiation
comprises UV emission ranging between about 200 nm (nanometers) and
about 350 nm.
16. A process module for treating a substrate, comprising: a
process chamber; a substrate holder coupled to said process chamber
and configured to support a substrate; a radiation source coupled
to said process chamber and configured to expose said substrate to
electromagnetic (EM) radiation, wherein said radiation source
comprises an infrared (IR) source arranged to produce an IR beam
having a beam spot on said substrate; and a gas injection system
having a gas nozzle coupled to said process chamber and configured
to produce a gas or vapor jet emanating from said gas nozzle along
a jet axis in a direction towards said substrate and intersecting
with said beam spot.
17. The process module of claim 16, wherein said radiation source
further comprises an ultraviolet (UV) radiation source.
18. The process module of claim 16, wherein said radiation source
includes an IR laser.
19. The process module of claim 16, further comprising: a radiation
scanning device coupled to said process chamber, and configured to
scan said IR beam across said substrate.
20. The process module of claim 16, further comprising: a
temperature control system coupled to said substrate holder and
configured to control a temperature of said substrate.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] Pursuant to 37 CFR .sctn.1.78(a)(4), this application claims
the benefit of and priority to U.S. Provisional application Ser.
No. 61/318,719 filed on Mar. 29, 2010; the entire content of which
is herein incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The invention relates to a method for cleaning a low
dielectric constant (low-k) dielectric film.
[0004] 2. Description of Related Art
[0005] As is known to those in the semiconductor art, interconnect
delay is a major limiting factor in the drive to improve the speed
and performance of integrated circuits (IC). One way to minimize
interconnect delay is to reduce interconnect capacitance by using
low dielectric constant (low-k) materials as the insulating
dielectric for metal wires in the IC devices. Thus, in recent
years, low-k materials have been developed to replace relatively
high dielectric constant insulating materials, such as silicon
dioxide. In particular, low-k films are being utilized for
inter-level and intra-level dielectric layers between metal wires
in semiconductor devices. Additionally, in order to further reduce
the dielectric constant of insulating materials, material films are
formed with pores, i.e., porous low-k dielectric films. Such low-k
films can be deposited by a spin-on dielectric (SOD) method similar
to the application of photo-resist, or by chemical vapor deposition
(CVD). Thus, the use of low-k materials is readily adaptable to
existing semiconductor manufacturing processes.
[0006] Low-k materials are less robust than more traditional
silicon dioxide, and the mechanical strength deteriorates further
with the introduction of porosity. The porous low-k films can
easily be damaged during plasma processing, thereby making
desirable a mechanical strengthening process. It has been
understood that enhancement of the material strength of porous
low-k dielectrics is essential for their successful integration.
Aimed at mechanical strengthening, alternative curing techniques
are being explored to make porous low-k films more robust and
suitable for integration.
[0007] The curing of a polymer includes a process whereby a thin
film deposited, for example, using spin-on or vapor deposition
(such as chemical vapor deposition CVD) techniques, is treated in
order to cause cross-linking within the film. During the curing
process, free radical polymerization is understood to be the
primary route for cross-linking. As polymer chains cross-link,
mechanical properties, such as for example the Young's modulus, the
film hardness, the fracture toughness and the interfacial adhesion,
are improved, thereby improving the fabrication robustness of the
low-k film.
[0008] As there are various strategies to forming porous dielectric
films with ultra low dielectric constant, the objectives of
post-deposition treatments (curing) may vary from film to film,
including for example the removal of moisture, the removal of
solvents, the burn-out of porogens used to form the pores in the
porous dielectric film, the improvement of the mechanical
properties for such films, and so on.
[0009] Low dielectric constant (low k) materials are conventionally
thermally cured at a temperature in the range of 300 degrees C. to
400 degrees C. for CVD films. In some instances, furnace curing has
been sufficient in producing strong, dense low-k films with a
dielectric constant greater than approximately 2.5. However, when
processing porous dielectric films (such as ultra low-k films) with
a high level of porosity, the degree of cross-linking achievable
with thermal treatment (or thermal curing) is no longer sufficient
to produce films of adequate strength for a robust interconnect
structure.
[0010] During thermal curing, an appropriate amount of energy is
delivered to the dielectric film without damaging the dielectric
film. Within the temperature range of interest, however, only a
small amount of free radicals can be generated. Only a small amount
of thermal energy can actually be absorbed in the low-k films to be
cured due to the thermal energy lost in the coupling of heat to the
substrate and the heat loss in the ambient environment. Therefore,
high temperatures and long curing times are required for typical
low-k furnace curing. But even with a high thermal budget, the lack
of initiator generation in the thermal curing and the presence of a
large amount of methyl termination in the as-deposited low-k film
can make it very difficult to achieve the desired degree of
cross-linking.
SUMMARY OF THE INVENTION
[0011] The invention relates to a method for treating a dielectric
film on a substrate and, in particular, a method for cleaning a
low-k dielectric film.
[0012] According to an embodiment, a method of cleaning a
dielectric film on a substrate is described. The method includes
irradiating a region on a substrate containing one or more layers
or structures with infrared (IR) radiation and optionally
ultraviolet (UV) radiation to remove material or undesired residues
from the one or more layers or structures. The method may
optionally include exposing at least a portion of the region to a
gas or vapor jet emanating from a gas nozzle along a jet axis in a
direction towards the substrate.
[0013] According to an embodiment, a process module for treating a
substrate is described. The process module includes a process
chamber, and a substrate holder coupled to the process chamber and
configured to support a substrate. Further, the process module
includes a radiation source coupled to the process chamber and
configured to expose the substrate to electromagnetic (EM)
radiation, wherein the radiation source comprises an infrared (IR)
source arranged to produce a beam of IR radiation yielding a beam
spot on the substrate. Further yet, the process module includes a
gas injection system having a gas nozzle coupled to the process
chamber and configured to produce a gas or vapor jet emanating from
the gas nozzle along a jet axis in a direction towards the
substrate and intersecting with the beam spot.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] In the accompanying drawings:
[0015] FIG. 1 illustrates a method of integrating a dielectric film
on a substrate according to an embodiment;
[0016] FIG. 2 illustrates a method of integrating a dielectric film
on a substrate according to another embodiment;
[0017] FIG. 3 illustrates a method of cleaning a substrate
according to an embodiment;
[0018] FIGS. 4A and 4B provide a schematic illustration of a method
and system for cleaning a substrate according to additional
embodiments;
[0019] FIGS. 5A through 5D illustrate a method of cleaning a
substrate according to yet additional embodiments;
[0020] FIG. 6 illustrates a side view schematic representation of
an exemplary transfer system for a treatment system according to an
embodiment;
[0021] FIG. 7 illustrates a top view schematic representation of
the transfer system depicted in FIG. 6;
[0022] FIG. 8 illustrates a side view schematic representation of
another exemplary transfer system for a treatment system according
to another embodiment;
[0023] FIG. 9 illustrates a top view schematic representation of
yet another exemplary transfer system for a treatment system
according to another embodiment;
[0024] FIG. 10 is a schematic cross-sectional view of a process
module according to another embodiment;
[0025] FIG. 11 is a schematic cross-sectional view of a process
module according to another embodiment;
[0026] FIG. 12 is a schematic cross-sectional view of a process
module according to another embodiment; and
[0027] FIG. 13 is a schematic cross-sectional view of a process
module according to another embodiment.
DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS
[0028] Methods for integrating, patterning, treating, curing, and
cleaning dielectric layers, including low-k dielectric films, on a
substrate using electromagnetic (EM) radiation are described in
various embodiments. One skilled in the relevant art will recognize
that the various embodiments may be practiced without one or more
of the specific details, or with other replacement and/or
additional methods, materials, or components. In other instances,
well-known structures, materials, or operations are not shown or
described in detail to avoid obscuring aspects of various
embodiments of the invention. Similarly, for purposes of
explanation, specific numbers, materials, and configurations are
set forth in order to provide a thorough understanding of the
invention. Nevertheless, the invention may be practiced without
specific details. Furthermore, it is understood that the various
embodiments shown in the figures are illustrative representations
and are not necessarily drawn to scale.
[0029] Reference throughout this specification to "one embodiment"
or "an embodiment" means that a particular feature, structure,
material, or characteristic described in connection with the
embodiment is included in at least one embodiment of the invention,
but do not denote that they are present in every embodiment. Thus,
the appearances of the phrases "in one embodiment" or "in an
embodiment" in various places throughout this specification are not
necessarily referring to the same embodiment of the invention.
Furthermore, the particular features, structures, materials, or
characteristics may be combined in any suitable manner in one or
more embodiments. Various additional layers and/or structures may
be included and/or described features may be omitted in other
embodiments.
[0030] "Substrate" as used herein generically refers to the object
being processed in accordance with the invention. The substrate may
include any material portion or structure of a device, particularly
a semiconductor or other electronics device, and may, for example,
be a base substrate structure, such as a semiconductor wafer or a
layer on or overlying a base substrate structure such as a thin
film. Thus, substrate is not intended to be limited to any
particular base structure, underlying layer or overlying layer,
patterned or unpatterned, but rather, is contemplated to include
any such layer or base structure, and any combination of layers
and/or base structures. The description below may reference
particular types of substrates, but this is for illustrative
purposes only and not limitation.
[0031] The inventors recognized that alternative methods for
treating a substrate, and in particular, treating a substrate
having a low-k dielectric film, address some of the deficiencies of
conventional curing methods, such as thermal curing, as well as
conventional cleaning methods, such as plasma ashing and wet
cleaning. For instance, alternative methods for curing and cleaning
such films are more efficient in energy transfer, as compared to
their conventional counterpart, and the higher energy levels found
in the form of energetic particles, such as accelerated electrons,
ions, or neutrals, or in the form of energetic photons, can easily
excite electrons in a low-k dielectric film, thus efficiently
breaking chemical bonds and dissociating side groups. These
alternative methods may facilitate the generation of cross-linking
initiators (free radicals) and can improve the energy transfer
required in actual cross-linking. As a result, the degree of
cross-linking can be increased at a reduced thermal budget.
[0032] Additionally, the inventors have realized that, when film
strength becomes a greater issue for the integration of low-k and
ultra-low-k (ULK) dielectric films (dielectric constant less than
approximately 2.5), alternative methods for curing and cleaning
such films may improve the mechanical properties of such films. For
example, electron beam (EB), ultraviolet (UV) radiation, infrared
(IR) radiation and microwave (MW) radiation may be used to cure
low-k films and ULK films in order to improve mechanical strength,
while not sacrificing the dielectric property and film
hydrophobicity.
[0033] However, although EB, UV, IR and MW curing all have their
own benefits, these techniques also have limitations. High energy
curing sources such as EB and UV can provide high energy levels to
generate more than enough cross-linking initiators (free radicals)
for cross-linking, which leads to much improved mechanical
properties under complementary substrate heating. On the other
hand, electrons and UV photons can cause indiscriminate
dissociation of chemical bonds, which may adversely degrade the
desired physical and electrical properties of the film, such as
loss of hydrophobicity, increased residual film stress, collapse of
pore structure, film densification and increased dielectric
constant. Furthermore, low energy curing sources, such as MW
curing, can provide significant improvements mostly in the heat
transfer efficiency, but in the meantime have side effects, such as
for example arcing or transistor damage.
[0034] Therefore, according to various embodiments, methods for
integrating, patterning, treating, curing, and cleaning dielectric
layers, including low-k dielectric films, on a substrate using EM
radiation are disclosed. Referring now to the drawings wherein like
reference numerals designate corresponding parts throughout the
several views, FIG. 1 provides a flow chart 1 illustrating a method
for integrating a dielectric film on a substrate according to an
embodiment. Furthermore, a pictorial view 20 of a method of
integrating a dielectric film on a substrate is illustrated in FIG.
2.
[0035] The method illustrated in flow chart 1 begins in step 11
(pictorial view 21) with preparing a dielectric film 32 on a
substrate 30, wherein the dielectric film 32 is a low-k dielectric
film having a dielectric constant less than or equal to a value of
4. Substrate 30 may be a semiconductor, a metallic conductor, or
any other substrate to which the dielectric film 32 is to be formed
upon.
[0036] Dielectric film 32 may have a dielectric constant value
(before drying and/or curing, or after drying and/or curing, or
both) less than the dielectric constant of SiO.sub.2, which is
about 4 (e.g., the dielectric constant for thermal silicon dioxide
can range from about 3.8 to 3.9). In various embodiments of the
invention, the dielectric film 32 may have a dielectric constant
(before drying and/or curing, or after drying and/or curing, or
both) of less than about 3.0, a dielectric constant of less than
about 2.5, a dielectric constant of less than about 2.2, or a
dielectric constant of less than about 1.7.
[0037] The dielectric film 32 may be described as a low dielectric
constant (low-k) film or an ultra-low-k film. The dielectric film
32 may include at least one of an organic, inorganic, and
inorganic-organic hybrid material. Additionally, the dielectric
film 32 may be porous or non-porous.
[0038] The dielectric film 32 may, for instance, include a single
phase or dual phase porous low-k film that includes a
structure-forming material and a pore-generating material. The
structure-forming material may include an atom, a molecule, or
fragment of a molecule that is derived from a structure-forming
precursor. The pore-generating material may include an atom, a
molecule, or fragment of a molecule that is derived from a
pore-generating precursor (e.g., porogen). The single phase or dual
phase porous low-k film may have a higher dielectric constant prior
to removal of the pore-generating material than following the
removal of the pore-generating material.
[0039] The forming of a single phase porous low-k film may include
depositing a structure-forming molecule having a pore-generating
molecular side group weakly bonded to the structure-forming
molecule on a surface of a substrate. For example, a single-phase
material may include a silicon oxide-based matrix having terminal
organic side groups that inhibit cross-linking during a curing
process to create small voids (or pores). Additionally, the forming
of a dual phase porous low-k film may include co-polymerizing a
structure-forming molecule and a pore-generating molecule on a
surface of a substrate. For example, a dual-phase material may
include a silicon oxide-based matrix having inclusions of organic
material (e.g., a porogen) that is decomposed and evaporated during
a curing process.
[0040] Additionally, the dielectric film 32 may have moisture,
water, solvent, and/or other contaminants which cause the
dielectric constant to be higher prior to drying and/or curing than
following drying and/or curing.
[0041] The dielectric film 32 may be formed using chemical vapor
deposition (CVD) techniques, or spin-on dielectric (SOD) techniques
such as those offered in the Clean Track ACT 8 SOD and ACT 12 SOD
coating systems commercially available from Tokyo Electron Limited
(TEL). The Clean Track ACT 8 (200 mm) and ACT 12 (300 mm) coating
systems provide coat, bake, and cure tools for SOD materials. The
track system can be configured for processing substrate sizes of
100 mm, 200 mm, 300 mm, and greater. Other systems and methods for
forming a film on a substrate as known to those skilled in the art
of both spin-on dielectric technology and CVD dielectric technology
are suitable for the invention.
[0042] In 12 and in pictorial view 22, a preliminary curing process
is performed on dielectric film 32 to at least partially cure
dielectric film 32 to produce soft-cured dielectric film 32A. The
preliminary curing process may precede any patterning of the
dielectric film 32, and may include a thermal curing process, an
infrared (IR) curing process, or an ultraviolet (UV) curing
process, or any combination of two or more thereof. Additionally,
the preliminary curing process may be performed at a first
substrate temperature. As an example, the preliminary curing
process may cause preliminary cross-linking to assist in relieving
stress in the dielectric film 32 during subsequent curing step(s).
Furthermore, for example, the preliminary curing process may cause
reduction in damage incurred during subsequent patterning via etch
processes and/or cleaning processes.
[0043] In one embodiment, the preliminary curing process includes
soft-curing the dielectric film 32 using UV radiation with optional
IR radiation and optional thermal heating.
[0044] During the preliminary curing process, the UV exposure may
comprise a plurality of UV exposures, wherein each UV exposure may
or may not include a different intensity, power, power density,
exposure times, or wavelength range, or any combination of two or
more thereof. Additionally, the IR exposure may comprise a
plurality of IR exposures, wherein each IR exposure may or may not
include a different intensity, power, power density, exposure
times, or wavelength range, or any combination of two or more
thereof. Furthermore, the UV exposure and the IR exposure may be
performed either sequentially or in parallel.
[0045] During the UV exposure, or the IR exposure, or both,
dielectric film 32 may be heated by elevating the substrate
temperature of substrate 30 to the first substrate temperature,
wherein the first substrate temperature ranges from about 100
degrees C. (Celsius, or Centigrade) to about 600 degrees C.
Alternatively, the first substrate temperature ranges from about
100 degrees C. to about 500 degrees C. Alternatively, the first
substrate temperature ranges from about 100 degrees C. to about 300
degrees C. Substrate thermal heating may be performed by conductive
heating, convective heating, or radiative heating, or any
combination of two or more thereof. For example, the substrate
temperature may be increased by elevating the temperature of a
substrate holder in contact with substrate 30.
[0046] Additionally, thermal heating of substrate 30 may take place
before UV exposure, during UV exposure, or after UV exposure, or
any combination of two or more thereof. Additionally yet, thermal
heating may take place before IR exposure, during IR exposure, or
after IR exposure, or any combination of two or more thereof.
Thermal heating may be performed by conductive heating, convective
heating, or radiative heating, or any combination of two or more
thereof.
[0047] Prior to UV and/or IR exposure, a drying process may be
performed to remove, or partially remove, one or more contaminants
in the dielectric film 32, including, for example, moisture, water,
solvent, pore-generating material, residual pore-generating
material, pore-generating molecules, fragments of pore-generating
molecules, or any other contaminant that may interfere with the
preliminary curing process.
[0048] The exposure of the dielectric film 32 to UV radiation may
include exposing the dielectric film 32 to UV radiation from one or
more UV lamps, one or more UV LEDs (light-emitting diodes), or one
or more UV lasers, or a combination of two or more thereof. The UV
radiation may be continuous or pulsed. The UV radiation may be
broad band or narrow band. The UV radiation may include UV emission
ranging in wavelength from approximately 100 nanometers (nm) to
approximately 600 nm. Alternatively, the UV radiation may range in
wavelength from approximately 150 nm to approximately 400 nm.
Alternatively, the UV radiation may range in wavelength from
approximately 200 nm to approximately 350 nm. Alternatively, the UV
radiation may range in wavelength from approximately 150 nm to
approximately 250 nm. Alternatively, the UV radiation may range in
wavelength from approximately 170 nm to approximately 240 nm.
Alternatively, the UV radiation may range in wavelength from
approximately 200 nm to approximately 250 nm.
[0049] The exposure of the dielectric film 32 to IR radiation may
include exposing the dielectric film 32 to IR radiation from one or
more IR lamps, one or more IR LEDs (light emitting diodes), or one
or more IR lasers, or a combination of two or more thereof. The IR
radiation may be continuous or pulsed. The IR radiation may be
broad band or narrow band. For example, the IR radiation may
contain substantially monochromatic electromagnetic (EM) radiation
having a narrow band of wavelengths. The IR radiation may include
IR emission ranging in wavelength from approximately 1 micron to
approximately 25 microns. Alternatively, the IR radiation may range
in wavelength from approximately 2 microns to approximately 20
microns. Alternatively, the IR radiation may range in wavelength
from approximately 8 microns to approximately 14 microns.
Alternatively, the IR radiation may range in wavelength from
approximately 8 microns to approximately 12 microns. Alternatively,
the IR radiation may range in wavelength from approximately 9
microns to approximately 10 microns.
[0050] The inventors have recognized that the energy level (hv)
delivered can be varied during different stages of the preliminary
curing process. The preliminary curing process may include
mechanisms for the removal of moisture and/or contaminants, the
removal of pore-generating material, the decomposition of
pore-generating material, the generation of cross-linking
initiators, the cross-linking of the dielectric film, and the
diffusion of the cross-linking initiators. Each mechanism may
require a different energy level and rate at which energy is
delivered to the dielectric film.
[0051] For instance, during the removal of pore-generating
material, the removal process may be facilitated by photon
absorption at IR wavelengths. The inventors have discovered that IR
exposure assists the removal of pore-generating material more
efficiently than thermal heating or UV exposure.
[0052] Additionally, for instance, during the removal of
pore-generating material, the removal process may be assisted by
decomposition of the pore-generating material. The removal process
may include IR exposure that is complemented by UV exposure. The
inventors have discovered that UV exposure may assist a removal
process having IR exposure by dissociating bonds between
pore-generating material (e.g., pore-generating molecules and/or
pore-generating molecular fragments) and the structure-forming
material. For example, the removal and/or decomposition processes
may be assisted by photon absorption at UV wavelengths (e.g., about
300 nm to about 450 nm).
[0053] Furthermore, for instance, during the generation of
cross-linking initiators, the initiator generation process may be
facilitated by using photon and phonon induced bond dissociation
within the structure-forming material. The inventors have
discovered that the initiator generation process may be facilitated
by UV exposure. For example, bond dissociation can require energy
levels having a wavelength less than or equal to approximately 300
to 400 nm.
[0054] Further yet, for instance, during cross-linking, the
cross-linking process can be facilitated by thermal energy
sufficient for bond formation and reorganization. The inventors
have discovered that cross-linking may be facilitated by IR
exposure or thermal heating or both. For example, bond formation
and reorganization may require energy levels having a wavelength of
approximately 9 microns which, for example, corresponds to the main
absorbance peak in siloxane-based organosilicate low-k
materials.
[0055] In 13 and in pictorial view 23, a pattern is formed in the
soft-cured dielectric film 32A using a lithographic process and an
etching process. The lithographic process includes preparing the
pattern in a layer of radiation-sensitive material, such as
photo-resist, using an image exposure and developing sequence. For
example, the pattern may include a trench or line pattern, or a via
or hole pattern, or a combination thereof. The pattern is
transferred to an underlying hard mask layer or cap layer 34 and,
thereafter, to the soft-cured dielectric film 32A using one or more
etch processes. The one or more etch processes may include dry
and/or wet etch processes. For example, the one or more etch
processes may include dry plasma and/or dry non-plasma etch
processes.
[0056] In 14 and in pictorial view 24, undesired residues, such as
surface residue 35, is removed from the substrate 30 to produce
reduced residue 35A on the exposed surface of soft-cured dielectric
film 32A. The exposed surface having reduced residue 35A may also
exhibit reduced damage. As an example, the undesired residues may
include surface adsorbates, particulates, moisture, etch residue,
undesired carbon-containing residue, amorphous carbon-containing
residue, hydrocarbon-containing residue, fluorocarbon-containing
residue, halogen-containing residue, or polymer-containing residue,
or any combination of two or more thereof.
[0057] During the patterning of dielectric film 32, or soft-cured
dielectric film 32A, including ultra low-k dielectric films (i.e.,
dielectric films having a dielectric constant k less than or equal
to a value of 2.5), the one or more etch processes utilized to
perform the patterning of dielectric film 32 may cause damage to
the dielectric film 32, or soft-cured dielectric film 32A,
including degradation of the dielectric constant k, the surface
roughness, and the hydrophilicity of the dielectric film 32, among
others. Furthermore, during removal of the one or more mask layers
utilized in the patterning of dielectric film 32, or soft-cured
dielectric film 32A, using an ashing process, such as a plasma
ashing process, and/or a wet cleaning process, additional
degradation and/or damage, including additional accumulation of
surface adsorbates, may be incurred. Further yet, during the
preparation of a low dielectric constant k for dielectric film 30,
or soft-cured dielectric film 32A, increased carbon content is
desirable. However, when the carbon content is increased using a
plasma enhanced chemical vapor deposition (PECVD) process,
unintended amorphous carbon residue with a relatively high
dielectric constant k remains which is difficult to remove. This
amorphous carbon-containing residue prevents further reduction of
the dielectric constant k.
[0058] Therefore, the removal of undesired residues may include:
(1) stripping one or more mask layers, such as photo-resist or
photo-resist residue, utilized during the patterning of dielectric
film 32, or soft-cured dielectric film 32A; (2) cleaning one or
more exposed surfaces of dielectric film 32, or soft-cured
dielectric film 32A, to remove any of the aforementioned undesired
residues or surface adsorbates, including moisture, etch residue,
halogen-containing residue, fluorocarbon-containing residue,
hydrocarbon-containing residue, etc.; (3) dehydrating one or more
exposed surfaces of dielectric film 32, or soft-cured dielectric
film 32A; (4) reducing the dielectric constant k of dielectric film
32, or soft-cured dielectric film 32A, with the removal of
unintended amorphous carbon-containing residue; or (5) performing
one or more stripping and/or cleaning processes without degrading
and/or further damaging dielectric film 32, or soft-cured
dielectric film 32A, or (6) performing any combination of two or
more thereof.
[0059] In one embodiment, the undesired residues may be removed
using a dry EM radiation cleaning process by irradiating substrate
30 containing the pattern in the dielectric film 32, or soft-cured
dielectric film 32A, with IR radiation and optionally UV radiation.
As will be discussed in greater detail below, undesired residues
may be removed from substrate 30 by irradiating substrate 30 with a
beam of IR radiation coupled with an optional exposure to UV
radiation and/or an optional exposure to a gas or vapor jet
emanating from a nozzle along a jet axis in a direction towards
substrate 30, wherein the gas or vapor jet may be reactive or
non-reactive with substrate 30. Furthermore, the removal of
undesired residues may include heating substrate 30 to a substrate
temperature ranging from about 20 degrees C. to about 250 degrees
C.
[0060] The inventors believe that IR radiation, such as far IR
emission, may be absorbed strongly in the patterned dielectric
films, and/or typical surface adsorbates, such as
hydrocarbon-containing material and fluorocarbon-containing
material. Additionally, it is believed that the thermophoretic
force resulting from the temperature gradient ensuing from EM
radiation may assist in the removal of surface adsorbates and
particulates. Furthermore, it is believed that UV radiation may
assist in the scission of chemical bonds typical in surface
adsorbates, such as photo-resist, hydrocarbon-containing material,
and fluorocarbon-containing material, thus, facilitating the
desorption process.
[0061] In another embodiment, the undesired residues may be removed
using a dry EM radiation cleaning process, as described above,
coupled with a reduced ashing process, such as a reduced plasma
ashing process. The reduced ashing process may be utilized to
remove, at least in part, undesired residues. For example, the
reduced ashing process may include a process condition, such as a
plasma process condition, that causes reduced damage to the
dielectric film 32, or soft-cured dielectric film 32A. The process
condition may include a reduced ashing time, a reduced plasma
power, a reduced chemistry (e.g., less aggressive chemistry, or
less damaging chemistry), or any combination thereof.
[0062] In yet another embodiment, the undesired residues may be
removed using an ashing process, or a wet cleaning process, or
both. For example, the ashing process may include a dry plasma
ashing process. Additionally, for example, the wet cleaning process
may include immersing substrate 30 in a wet cleaning solution, such
as an aqueous HF solution.
[0063] In pictorial view 25, an optional silylation process may be
performed following the removing of undesired residues in 14
(pictorial view 24), and preceding a final curing process to
produce silylated surface layer 35B. The silylation process
includes the introduction of a silyl group to the dielectric film
32, or soft-cured dielectric film 32A, to serve as a protecting
group for planarization, healing, and/or sealing of the exposed
surface of the dielectric film 32, or soft-cured dielectric film
32A.
[0064] In one embodiment, the silylation process may include
introducing a silane compound, a silazane compound, HMDS, or TMCS,
or any combination of two or more thereof. The silylation may
further include maintaining substrate 30 at a substrate temperature
between about 200 degrees C. and about 400 degrees C. In another
embodiment, the silylation process may further include irradiating
substrate 30 with UV radiation.
[0065] In 15 and in pictorial view 26, a final curing process is
performed on dielectric film 32, or soft-cured dielectric film 32A,
to at least additionally cure dielectric film 32 to produce
hard-cured dielectric film 32B. The final curing process may
include a thermal curing process, an IR curing process, or a UV
curing process, or any combination of two or more thereof.
Additionally, the final curing process may be performed at a second
substrate temperature. In one embodiment, the second substrate
temperature exceeds the first substrate temperature. As an example,
the final curing process may cause substantially complete
cross-linking of the dielectric film 32, or soft-cured dielectric
film 32A, to produce enhanced film properties including, for
example, mechanical properties.
[0066] In one embodiment, the final curing process includes
hard-curing the dielectric film 32 using UV radiation with optional
IR radiation and optional thermal heating.
[0067] During the final curing process, the UV exposure may
comprise a plurality of UV exposures, wherein each UV exposure may
or may not include a different intensity, power, power density,
exposure times, or wavelength range, or any combination of two or
more thereof. Additionally, the IR exposure may comprise a
plurality of IR exposures, wherein each IR exposure may or may not
include a different intensity, power, power density, exposure
times, or wavelength range, or any combination of two or more
thereof. Furthermore, the UV exposure and the IR exposure may be
performed either sequentially or in parallel.
[0068] During the UV exposure, or the IR exposure, or both,
dielectric film 32, or soft-cured dielectric film 32A, may be
heated by elevating the substrate temperature of substrate 30 to
the first substrate temperature, wherein the first substrate
temperature ranges from approximately 100 degrees C. to
approximately 600 degrees C. Alternatively, the first substrate
temperature ranges from approximately 100 degrees C. to
approximately 500 degrees C. Alternatively, the first substrate
temperature ranges from approximately 100 degrees C. to
approximately 300 degrees C. Substrate thermal heating may be
performed by conductive heating, convective heating, or radiative
heating, or any combination of two or more thereof. For example,
the substrate temperature may be increased by elevating the
temperature of a substrate holder in contact with substrate 30.
[0069] Additionally, thermal heating of substrate 30 may take place
before UV exposure, during UV exposure, or after UV exposure, or
any combination of two or more thereof. Additionally yet, thermal
heating may take place before IR exposure, during IR exposure, or
after IR exposure, or any combination of two or more thereof.
Thermal heating may be performed by conductive heating, convective
heating, or radiative heating, or any combination of two or more
thereof.
[0070] Prior to UV and/or IR exposure, a drying process may be
performed to remove, or partially remove, one or more contaminants
in the dielectric film 32, or the soft-cured dielectric film 32A,
including, for example, moisture, water, solvent, pore-generating
material, residual pore-generating material, pore-generating
molecules, fragments of pore-generating molecules, or any other
contaminant that may interfere with the final curing process.
[0071] The exposure of the dielectric film 32, or the soft-cured
dielectric film 32A, to UV radiation may include exposing the
dielectric film 32, or the soft-cured dielectric film 32A, to UV
radiation from one or more UV lamps, one or more UV LEDs
(light-emitting diodes), or one or more UV lasers, or a combination
of two or more thereof. The UV radiation may be continuous or
pulsed. The UV radiation may be broad band or narrow band. The UV
radiation may include UV emission ranging in wavelength from
approximately 100 nanometers (nm) to approximately 600 nm.
Alternatively, the UV radiation may range in wavelength from
approximately 150 nm to approximately 400 nm. Alternatively, the UV
radiation may range in wavelength from approximately 200 nm to
approximately 350 nm. Alternatively, the UV radiation may range in
wavelength from approximately 150 nm to approximately 250 nm.
Alternatively, the UV radiation may range in wavelength from
approximately 170 nm to approximately 240 nm. Alternatively, the UV
radiation may range in wavelength from approximately 200 nm to
approximately 250 nm.
[0072] The exposure of the dielectric film 32, or the soft-cured
dielectric film 32A, to IR radiation may include exposing the
dielectric film 32, or the soft-cured dielectric film 32A, to IR
radiation from one or more IR lamps, one or more IR LEDs (light
emitting diodes), or one or more IR lasers, or a combination of two
or more thereof. The IR radiation may be continuous or pulsed. The
IR radiation may be broad band or narrow band. For example, the IR
radiation may contain substantially monochromatic electromagnetic
(EM) radiation having a narrow band of wavelengths. The IR
radiation may include IR emission ranging in wavelength from
approximately 1 micron to approximately 25 microns. Alternatively,
the IR radiation may range in wavelength from approximately 2
microns to approximately 20 microns. Alternatively, the IR
radiation may range in wavelength from approximately 8 microns to
approximately 14 microns. Alternatively, the IR radiation may range
in wavelength from approximately 8 microns to approximately 12
microns. Alternatively, the IR radiation may range in wavelength
from approximately 9 microns to approximately 10 microns.
[0073] The inventors have recognized that the energy level (hv)
delivered can be varied during different stages of the final curing
process. The final curing process may include mechanisms for the
removal of moisture and/or contaminants, the removal of
pore-generating material, the decomposition of pore-generating
material, the generation of cross-linking initiators, the
cross-linking of the dielectric film, and the diffusion of the
cross-linking initiators. Each mechanism may require a different
energy level and rate at which energy is delivered to the
dielectric film.
[0074] For instance, during the removal of pore-generating
material, the removal process may be facilitated by photon
absorption at IR wavelengths. The inventors have discovered that IR
exposure assists the removal of pore-generating material more
efficiently than thermal heating or UV exposure.
[0075] Additionally, for instance, during the removal of
pore-generating material, the removal process may be assisted by
decomposition of the pore-generating material. The removal process
may include IR exposure that is complemented by UV exposure. The
inventors have discovered that UV exposure may assist a removal
process having IR exposure by dissociating bonds between
pore-generating material (e.g., pore-generating molecules and/or
pore-generating molecular fragments) and the structure-forming
material. For example, the removal and/or decomposition processes
may be assisted by photon absorption at UV wavelengths (e.g., about
300 nm to about 450 nm).
[0076] Furthermore, for instance, during the generation of
cross-linking initiators, the initiator generation process may be
facilitated by using photon and phonon induced bond dissociation
within the structure-forming material. The inventors have
discovered that the initiator generation process may be facilitated
by UV exposure. For example, bond dissociation can require energy
levels having a wavelength less than or equal to approximately 300
to 400 nm.
[0077] Further yet, for instance, during cross-linking, the
cross-linking process can be facilitated by thermal energy
sufficient for bond formation and reorganization. The inventors
have discovered that cross-linking may be facilitated by IR
exposure or thermal heating or both. For example, bond formation
and reorganization may require energy levels having a wavelength of
approximately 9 microns which, for example, corresponds to the main
absorbance peak in siloxane-based organosilicate low-k
materials.
[0078] Furthermore, the patterned, hard-cured dielectric film 32B
may optionally be post-treated in a post-treatment system
configured to modify the hard-cured dielectric film 32B. For
example, post-treatment may include thermal heating the hard-cured
dielectric film 32B. Alternatively, for example, post-treatment may
include spin coating or vapor depositing another film on the
hard-cured dielectric film 32B in order to promote adhesion for
subsequent films or improve hydrophobicity. Alternatively, for
example, adhesion promotion may be achieved in a post-treatment
system by lightly bombarding the hard-cured dielectric film 32B
with ions. Moreover, the post-treatment may comprise performing one
or more of depositing another film on the hard-cured dielectric
film 32B, cleaning the hard-cured dielectric film 32B, or exposing
the hard-cured dielectric film 32B to plasma.
[0079] Referring now to FIG. 3, a flow chart 4 illustrating a
method for cleaning a substrate is provided according to an
embodiment. Furthermore, systems and methods for cleaning a
substrate are illustrated in FIGS. 4A, 4B, and 5A through 5D.
[0080] As illustrated in FIGS. 3, 4A, 4B, and 5A-5D, the method
illustrated in flow chart 4 begins in 41 with irradiating a region
62 on a substrate 50 containing one or more layers or structures
60A-D with infrared (IR) radiation and optionally ultraviolet (UV)
radiation to remove material or undesired residues 65A-D from the
one or more layers or structures 60A-D. As an example, the
undesired residues may include surface adsorbates, particulates,
moisture, etch residue, undesired carbon-containing residue,
amorphous carbon-containing residue, hydrocarbon-containing
residue, fluorocarbon-containing residue, halogen-containing
residue, or polymer-containing residue, or any combination of two
or more thereof.
[0081] The one or more layers or structures 60A-60D may include a
low-k layer, an ultra low-k layer, a photo-resist layer, an
anti-reflective coating (ARC) layer, an organic planarization layer
(OPL), a soft mask layer, or a hard mask layer, or any combination
of two or more thereof. Furthermore, the one or more layers or
structures 60A-60D may include an un-patterned, blanket layer or
structure, or the one or more layers or structures 60A-60D may
include a patterned layer or structure, as shown in FIGS. 5A
through 5D. For example, the patterned layer or structure may be
formed using lithographic and/or etching processes. Additionally,
for example, the patterned layer or structure may be formed using a
patterned mask layer and an etching process.
[0082] The IR radiation may include a beam of IR radiation 52
emitted from an IR source 51 yielding a beam spot 53 on substrate
50. The IR source 51 may include one or more IR lamps, one or more
IR LEDs (light emitting diodes), or one or more IR lasers, or a
combination of two or more thereof. The IR radiation may be
continuous or pulsed. The IR radiation may be broad band or narrow
band. For example, the IR radiation may contain substantially
monochromatic electromagnetic (EM) radiation having a narrow band
of wavelengths. The IR radiation may include IR emission ranging in
wavelength from approximately 1 micron to approximately 25 microns.
Alternatively, the IR radiation may range in wavelength from
approximately 2 microns to approximately 20 microns. Alternatively,
the IR radiation may range in wavelength from approximately 8
microns to approximately 14 microns. Alternatively, the IR
radiation may range in wavelength from approximately 8 microns to
approximately 12 microns. Alternatively, the IR radiation may range
in wavelength from approximately 9 microns to approximately 10
microns. A spectral content for the IR radiation may be selected to
cause absorption in at least a portion of remnants of the one or
more layers or structures 60A-60D, or at least a portion of the
material or undesired residues to be removed.
[0083] The UV source (not shown) may include one or more UV lamps,
one or more UV LEDs (light-emitting diodes), or one or more UV
lasers, or a combination of two or more thereof. The UV radiation
may be continuous or pulsed. The UV radiation may be broad band or
narrow band. The UV radiation may include UV emission ranging in
wavelength from approximately 100 nanometers (nm) to approximately
600 nm. Alternatively, the UV radiation may range in wavelength
greater than approximately 250 nm.
[0084] The IR exposure and the UV exposure may be performed either
sequentially or in parallel. For example, the irradiating may
include IR irradiation simultaneous with UV radiation, preceded by
UV radiation, or followed by UV irradiation, or any combination of
two or more thereof.
[0085] During the IR exposure, or the UV exposure, or both, the one
or more layers or structures 60A-D may be heated by elevating the
substrate temperature of substrate 50 to a temperature ranging from
approximately 20 degrees C. to approximately 250 degrees C. For
example, the substrate temperature may be increased by elevating
the temperature of a substrate holder in contact with substrate
50.
[0086] Additionally, thermal heating of substrate 50 may take place
before IR exposure, during IR exposure, or after IR exposure, or
any combination of two or more thereof. Additionally yet, thermal
heating may take place before UV exposure, during UV exposure, or
after UV exposure, or any combination of two or more thereof.
Thermal heating may be performed by conductive heating, convective
heating, or radiative heating, or any combination of two or more
thereof.
[0087] In 42, at least a portion of region 62 is exposed to a gas
or vapor jet (56, 56') emanating from a gas nozzle 55 along a jet
axis (57, 57') in a direction towards substrate 50. For example,
the jet axis (57, 57') may intersect with the beam spot 53 on
substrate 50. The gas or vapor jet (56, 56') may be selected to be
reactive or non-reactive with at least a portion of region 62.
Further, the gas or vapor jet (56, 56') may contain He, Ne, Ar, Kr,
Xe, N.sub.2, H.sub.2, NH.sub.3, CO, CO.sub.2, or O.sub.2, or any
combination of two or more thereof. For example, oxygen-containing
gases may combine with carbon to produce volatile byproducts, such
as CO or CO.sub.2.
[0088] In an example, a cleaning process is schematically
illustrated in FIG. 5A. The cleaning process includes irradiating
one or more layers or structures 60A containing a patterned low-k
dielectric material 63 with IR radiation 67 assisted by UV
radiation 68 to remove photo-resist layer 64A and photo-resist
residue 65A on the sidewalls of patterned low-k dielectric material
63. As a result, the cleaning process produces one or more cleaned
layers or structures 61A having reduced photo-resist 66A and/or
photo-resist related damage. The inventors believe that UV
radiation having UV emission greater than about 300 nm (although
not limited to this wavelength range) may selectively graft polymer
adsorbates at low substrate temperature, while absorption of IR
radiation may assist the desorption of volatile polymer residue on
exposed surfaces of the low-k dielectric material. As described
above, the cleaning process may be further coupled with a reduced
(e.g., less aggressive) ashing process.
[0089] In another example, a cleaning process is schematically
illustrated in FIG. 5B. The cleaning process includes irradiating
one or more layers or structures 60B containing a patterned low-k
dielectric material 63 and patterned hard mask/cap material 64B
with IR radiation 67 assisted by UV radiation 68 to remove
photo-resist residue 65B on the sidewalls of patterned low-k
dielectric material 63. As a result, the cleaning process produces
one or more cleaned layers or structures 61B having reduced
photo-resist 66B and/or photo-resist related damage. The inventors
believe that UV radiation having UV emission greater than about 300
nm (although not limited to this wavelength range) may selectively
graft polymer adsorbates at low substrate temperature, while
absorption of IR radiation may assist the desorption of volatile
polymer residue on exposed surfaces of the low-k dielectric
material. As described above, the cleaning process may be further
coupled with a reduced (e.g., less aggressive) ashing process.
[0090] In another example, a cleaning process is schematically
illustrated in FIG. 5C. The cleaning process includes irradiating
one or more layers or structures 60C containing a patterned low-k
dielectric material 63 and patterned hard mask/cap material 64C
with IR radiation 67 to remove moisture 65C on the sidewalls of
patterned low-k dielectric material 63. As a result, the cleaning
process produces one or more cleaned layers or structures 61C
having reduced moisture 66C and/or moisture related damage. The
inventors believe that IR radiation may selectively heat the low-k
dielectric material to remove moisture.
[0091] In another example, a cleaning process is schematically
illustrated in FIG. 5D. The cleaning process includes irradiating
one or more layers or structures 60D containing a patterned low-k
dielectric material 63 and patterned soft mask/hard mask/cap
material 64D with IR radiation 67 to remove amorphous carbon 65D on
the sidewalls of patterned low-k dielectric material 63. As a
result, the cleaning process produces one or more cleaned layers or
structures 61D having reduced amorphous carbon 66D and/or amorphous
carbon related damage. Additionally or alternatively, the cleaning
process may include UV radiation. The inventors believe that IR
and/or UV radiation may efficiently remove amorphous carbon to
reduce dielectric constant k. Furthermore, the inventors believe
that subsequent UV-induced silylation is more effectively applied
following the IR and/or UV exposure in the cleaning process.
[0092] According to one embodiment, FIGS. 6 and 7 provide a side
view and top view, respectively, of a process platform 100 for
treating a dielectric film on a substrate. The process platform 100
includes a first process module 110 and a second process module
120. The first process module 110 may include a curing system, a
cleaning system, a surface modification system, or a drying system.
The second process module 120 may include a curing system, a
cleaning system, a surface modification system, or a drying
system.
[0093] The drying system may be configured to remove, or reduce to
sufficient levels, one or more contaminants, pore-generating
materials, and/or cross-linking inhibitors in the dielectric film,
including, for example, moisture, water, solvent, contaminants,
pore-generating material, residual pore-generating material, a
weakly bonded side group to the structure-forming material,
pore-generating molecules, fragments of pore-generating molecules,
cross-linking inhibitors, fragments of cross-linking inhibitors, or
any other contaminant that may interfere with a curing process
performed in the curing system.
[0094] For example, a sufficient reduction of a specific
contaminant present within the dielectric film, from prior to the
drying process to following the drying process, can include a
reduction of approximately 10% to approximately 100% of the
specific contaminant. The level of contaminant reduction may be
measured using Fourier transform infrared (FTIR) spectroscopy, or
mass spectroscopy. Alternatively, for example, a sufficient
reduction of a specific contaminant present within the dielectric
film can range from approximately 50% to approximately 100%.
Alternatively, for example, a sufficient reduction of a specific
contaminant present within the dielectric film can range from
approximately 80% to approximately 100%.
[0095] Referring still to FIG. 6, the curing system may be
configured to perform the preliminary curing process, or the final
curing process, or both. Additionally, the curing system may be
configured to cure the dielectric film by causing or partially
causing cross-linking within the dielectric film in order to, for
example, improve the mechanical properties of the dielectric film.
Furthermore, the curing system may be configured to cure the
dielectric film by causing or partially causing cross-link
initiation, removal of pore-generating material, decomposition of
pore-generating material, etc. The curing system can include one or
more radiation sources configured to expose the substrate having
the dielectric film to EM radiation at multiple EM wavelengths. For
example, the one or more radiation sources can include an IR
radiation source and a UV radiation source. The exposure of the
substrate to UV radiation and IR radiation may be performed
simultaneously, sequentially, or partially over-lapping one
another. During sequential exposure, the exposure of the substrate
to UV radiation can, for instance, precede the exposure of the
substrate to IR radiation or follow the exposure of the substrate
to IR radiation or both. Additionally, during sequential exposure,
the exposure of the substrate to IR radiation can, for instance,
precede the exposure of the substrate to UV radiation or follow the
exposure of the substrate to UV radiation or both.
[0096] For example, the IR radiation can include an IR radiation
source ranging from approximately 1 micron to approximately 25
microns. Additionally, for example, the IR radiation may range from
about 2 microns to about 20 microns, or from about 8 microns to
about 14 microns, or from about 8 microns to about 12 microns, or
from about 9 microns to about 10 microns. Additionally, for
example, the UV radiation can include a UV wave-band source
producing radiation ranging from approximately 100 nanometers (nm)
to approximately 600 nm. Furthermore, for example, the UV radiation
may range from about 150 nm to about 400 nm, or from about 150 nm
to about 300 nm, or from about 170 to about 240 nm, or from about
200 nm to about 240 nm.
[0097] Alternatively, the first process module 110 may comprise a
first curing system configured to expose the substrate to UV
radiation, and the second process module 120 may comprise a second
curing system configured to expose the substrate to IR
radiation.
[0098] IR exposure of the substrate can be performed in the first
process module 110, or the second process module 120, or a separate
process module (not shown).
[0099] Referring still to FIG. 6, the cleaning system may be
configured to perform the removal of undesired residues. For
example, the cleaning system may include any one of the systems
described in FIGS. 4A and 4B.
[0100] Also, as illustrated in FIGS. 6 and 7, a transfer system 130
can be coupled to the second process module 120 in order to
transfer substrates into and out of the first process module 110
and the second process module 120, and exchange substrates with a
multi-element manufacturing system 140. Transfer system 130 may
transfer substrates to and from the first process module 110 and
the second process module 120 while maintaining a vacuum
environment.
[0101] The first and second process modules 110, 120, and the
transfer system 130 can, for example, include a processing element
102 within the multi-element manufacturing system 140. The transfer
system 130 may comprise a dedicated substrate handler 160 for
moving a one or more substrates between the first process module
110, the second process module 120, and the multi-element
manufacturing system 140. For example, the dedicated substrate
handler 160 is dedicated to transferring the one or more substrates
between the process modules (first process module 110 and second
process module 120), and the multi-element manufacturing system
140; however, the embodiment is not so limited.
[0102] For example, the multi-element manufacturing system 140 may
permit the transfer of substrates to and from processing elements
including such devices as etch systems, deposition systems, coating
systems, patterning systems, metrology systems, etc. As an example,
the deposition system may include one or more vapor deposition
systems, each of which is configured to deposit a dielectric film
on a substrate, wherein the dielectric film comprises a porous
dielectric film, a non-porous dielectric film, a low dielectric
constant (low-k) film, or an ultra low-k film. In order to isolate
the processes occurring in the first and second systems, an
isolation assembly 150 can be utilized to couple each system. For
instance, the isolation assembly 150 can include at least one of a
thermal insulation assembly to provide thermal isolation, and a
gate valve assembly to provide vacuum isolation. The first and
second process modules 110 and 120, and transfer system 130 can be
placed in any sequence.
[0103] FIG. 7 presents a top-view of the process platform 100
illustrated in FIG. 6 for processing one or more substrates. In
this embodiment, a substrate 142 is processed in the first and
second process modules 110, 120. Although only one substrate is
shown in each treatment system in FIG. 7, two or more substrates
may be processed in parallel in each process module.
[0104] Referring still to FIG. 7, the process platform 100 may
comprise a first process element 102 and a second process element
104 configured to extend from the multi-element manufacturing
system 140 and work in parallel with one another. As illustrated in
FIGS. 6 and 7, the first process element 102 may comprise first
process module 110 and second process module 120, wherein a
transfer system 130 utilizes the dedicated substrate handler 160 to
move substrate 142 into and out of the first process element
102.
[0105] Alternatively, FIG. 8 presents a side-view of a process
platform 200 for processing one or more substrates according to
another embodiment. Process platform 200 may be configured for
treating a dielectric film on a substrate.
[0106] The process platform 200 comprises a first process module
210, and a second process module 220, wherein the first process
module 210 is stacked atop the second process module 220 in a
vertical direction as shown. The first process module 210 may
comprise a curing system, and the second process module 220 may
comprise a drying system. Alternatively, the first process module
210 may comprise a first curing system configured to expose the
substrate to UV radiation, and the second process module 220 may
comprise a second curing system configured to expose the substrate
to IR radiation.
[0107] Also, as illustrated in FIG. 8, a transfer system 230 may be
coupled to the first process module 210, in order to transfer
substrates into and out of the first process module 210, and
coupled to the second process module 220, in order to transfer
substrates into and out of the second process module 220. The
transfer system 230 may comprise a dedicated handler 260 for moving
one or more substrates between the first process module 210, the
second process module 220 and the multi-element manufacturing
system 240. The handler 260 may be dedicated to transferring the
substrates between the process modules (first process module 210
and second process module 220) and the multi-element manufacturing
system 240; however, the embodiment is not so limited.
[0108] Additionally, transfer system 230 may exchange substrates
with one or more substrate cassettes (not shown). Although only two
process modules are illustrated in FIG. 8, other process modules
can access transfer system 230 or multi-element manufacturing
system 240 including such devices as etch systems, deposition
systems, coating systems, patterning systems, metrology systems,
etc. As an example, the deposition system may include one or more
vapor deposition systems, each of which is configured to deposit a
dielectric film on a substrate, wherein the dielectric film
comprises a porous dielectric film, a non-porous dielectric film, a
low dielectric constant (low-k) film, or an ultra low-k film. An
isolation assembly 250 can be used to couple each process module in
order to isolate the processes occurring in the first and second
process modules. For instance, the isolation assembly 250 may
comprise at least one of a thermal insulation assembly to provide
thermal isolation, and a gate valve assembly to provide vacuum
isolation. Additionally, for example, the transfer system 230 can
serve as part of the isolation assembly 250.
[0109] According to another embodiment, FIG. 9 presents a top view
of a process platform 300 for processing a plurality of substrates
342. Process platform 300 may be configured for treating a
dielectric film on a substrate.
[0110] The process platform 300 comprises a first process module
310, a second process module 320, and an optional auxiliary process
module 370 coupled to a first transfer system 330 and an optional
second transfer system 330'. The first process module 310 may
comprise a curing system, and the second process module 320 may
comprise a drying system. Alternatively, the first process module
310 may comprise a first curing system configured to expose the
substrate 342 to UV radiation, and the second process module 320
may comprise a second curing system configured to expose the
substrate 342 to IR radiation.
[0111] Also, as illustrated in FIG. 9, the first transfer system
330 and the optional second transfer system 330' are coupled to the
first process module 310 and the second process module 320, and
configured to transfer one or more substrates 342 in and out of the
first process module 310 and the second process module 320, and
also to exchange one or more substrates 342 with a multi-element
manufacturing system 340. The multi-element manufacturing system
340 may comprise a load-lock element to allow cassettes of
substrates 342 to cycle between ambient conditions and low pressure
conditions.
[0112] The first and second treatment systems 310, 320, and the
first and optional second transfer systems 330, 330' can, for
example, comprise a processing element within the multi-element
manufacturing system 340. The transfer system 330 may comprise a
first dedicated handler 360 and the optional second transfer system
330' comprises an optional second dedicated handler 360' for moving
one or more substrates 342 between the first process module 310,
the second process module 320, the optional auxiliary process
module 370 and the multi-element manufacturing system 340.
[0113] In one embodiment, the multi-element manufacturing system
340 may permit the transfer of substrates 342 to and from
processing elements including such devices as etch systems,
deposition systems, coating systems, patterning systems, metrology
systems, etc. Furthermore, the multi-element manufacturing system
340 may permit the transfer of substrates 342 to and from the
auxiliary process module 370, wherein the auxiliary process module
370 may include an etch system, a deposition system, a coating
system, a patterning system, a metrology system, etc. As an
example, the deposition system may include one or more vapor
deposition systems, each of which is configured to deposit a
dielectric film on a substrate 342, wherein the dielectric film
comprises a porous dielectric film, a non-porous dielectric film, a
low dielectric constant (low-k) film, or an ultra low-k film.
[0114] In order to isolate the processes occurring in the first and
second process modules, an isolation assembly 350 is utilized to
couple each process module. For instance, the isolation assembly
350 may comprise at least one of a thermal insulation assembly to
provide thermal isolation and a gate valve assembly to provide
vacuum isolation. Of course, process modules 310 and 320, and
transfer systems 330 and 330' may be placed in any sequence.
[0115] Referring now to FIG. 10, a process module 400 configured to
treat a dielectric film on a substrate is shown according to
another embodiment. As an example, the process module 400 may be
configured to cure a dielectric film. As another example, the
process module 400 may be configured to clean a dielectric film. As
yet another example, the process module 400 may be configured to
modify a surface on a dielectric film. Process module 400 includes
a process chamber 410 configured to produce a clean,
contaminant-free environment for curing, cleaning, and/or modifying
a substrate 425 resting on substrate holder 420. Process module 400
further includes a radiation source 440 configured to expose
substrate 425 having the dielectric film to EM radiation.
[0116] The EM radiation is dedicated to a specific radiation
wave-band, and includes single, multiple, narrow band, or broad
band EM wavelengths within that specific radiation wave-band. For
example, the radiation source 440 can include an IR radiation
source configured to produce EM radiation in the IR spectrum.
Alternatively, for example, the radiation source 440 can include a
UV radiation source configured to produce EM radiation in the UV
spectrum. In this embodiment, IR treatment and UV treatment of
substrate 425 can be performed in a separate process modules.
[0117] The IR radiation source may include a broad band IR source
(e.g., polychromatic), or may include a narrow band IR source
(e.g., monochromatic). The IR radiation source may include one or
more IR lamps, one or more IR LEDs, or one or more IR lasers
(continuous wave (CW), tunable, or pulsed), or any combination
thereof. The IR power density may range up to about 20 W/cm.sup.2.
For example, the IR power density may range from about 1 W/cm.sup.2
to about 20 W/cm.sup.2.
[0118] Depending on the application, the IR radiation wavelength
may range from approximately 1 micron to approximately 25 microns.
Alternatively, the IR radiation wavelength may range from
approximately 8 microns to approximately 14 microns. Alternatively,
the IR radiation wavelength may range from approximately 8 microns
to approximately 12 microns. Alternatively, the IR radiation
wavelength may range from approximately 9 microns to approximately
10 microns. For example, the IR radiation source may include a
CO.sub.2 laser system. Additional, for example, the IR radiation
source may include an IR element, such as a ceramic element or
silicon carbide element, having a spectral output ranging from
approximately 1 micron to approximately 25 microns, or the IR
radiation source can include a semiconductor laser (diode), or ion,
Ti:sapphire, or dye laser with optical parametric
amplification.
[0119] The UV radiation source may include a broad band UV source
(e.g., polychromatic), or may include a narrow band UV source
(e.g., monochromatic). The UV radiation source may include one or
more UV lamps, one or more UV LEDs, or one or more UV lasers
(continuous wave (CW), tunable, or pulsed), or any combination
thereof. UV radiation may be generated, for instance, from a
microwave source, an arc discharge, a dielectric barrier discharge,
or electron impact generation. The UV power density may range from
approximately 0.1 mW/cm.sup.2 to approximately 2000
mW/cm.sup.2.
[0120] Depending on the application, the UV wavelength may range
from approximately 100 nanometers (nm) to approximately 600 nm.
Alternatively, the UV radiation may range from approximately 150 nm
to approximately 400 nm. Alternatively, the UV radiation may range
from approximately 150 nm to approximately 300 nm. Alternatively,
the UV radiation may range from approximately 170 nm to
approximately 240 nm. Alternatively, the UV radiation may range
from approximately 200 nm to approximately 350 nm. Alternatively,
the UV radiation may range from approximately 200 nm to
approximately 240 nm. For example, the UV radiation source may
include a direct current (DC) or pulsed lamp, such as a Deuterium
(D.sub.2) lamp, having a spectral output ranging from approximately
180 nm to approximately 500 nm, or the UV radiation source may
include a semiconductor laser (diode), (nitrogen) gas laser,
frequency-tripled (or quadrupled) Nd:YAG laser, or copper vapor
laser.
[0121] The IR radiation source, or the UV radiation source, or
both, may include any number of optical devices to adjust one or
more properties of the output radiation. For example, each source
may further include optical filters, optical lenses, beam
expanders, beam collimators, etc. Such optical manipulation devices
as known to those skilled in the art of optics and EM wave
propagation are suitable for the invention.
[0122] The substrate holder 420 can further include a temperature
control system that can be configured to elevate and/or control the
temperature of substrate 425. The temperature control system can be
a part of a thermal treatment device 430. The substrate holder 420
can include one or more conductive heating elements embedded in
substrate holder 420 coupled to a power source and a temperature
controller. For example, each heating element can include a
resistive heating element coupled to a power source configured to
supply electrical power. The substrate holder 420 could optionally
include one or more radiative heating elements. Depending on the
application, the temperature of substrate 425 can, for example,
range from approximately 20 degrees C. to approximately 600 degrees
C., and desirably, the temperature may range from approximately 100
degrees C. to approximately 600 degrees C. For example, the
temperature of substrate 425 can range from approximately 300
degrees C. to approximately 500 degrees C., or from approximately
300 degrees C. to approximately 450 degrees C. Alternatively, for
example, the temperature of substrate 425 can range from
approximately 20 degrees C. to approximately 300 degrees C., or
from approximately 20 degrees C. to approximately 250 degrees
C.
[0123] The substrate holder 420 can further include a drive system
435 configured to translate, or rotate, or both translate and
rotate the substrate holder 420 to move the substrate 425 relative
to radiation source 440.
[0124] Additionally, the substrate holder 420 may or may not be
configured to clamp substrate 425. For instance, substrate holder
420 may be configured to mechanically or electrically clamp
substrate 425.
[0125] Although not shown, substrate holder 420 may be configured
to support a plurality of substrates.
[0126] Referring again to FIG. 10, process module 400 can further
include a gas injection system 450 coupled to the process chamber
410 and configured to introduce a purge gas or process gas that is
either reactive or non-reactive with substrate 425 to process
chamber 410. The gas injection system 450 may include a gas nozzle
452 configured to produce a gas or vapor jet 454 along a jet axis
in a direction towards substrate 425. The gas or vapor jet 454 may
be simultaneous with and/or intersecting with EM radiation 442 from
radiation source 440. The purge gas or process gas may, for
example, include an inert gas, such as a noble gas or nitrogen.
Alternatively, the purge gas can include other gases listed above,
such as for example O.sub.2, H.sub.2, NH.sub.3, C.sub.xH.sub.y, or
any combination thereof. Additionally, process module 400 can
further include a vacuum pumping system 455 coupled to process
chamber 410 and configured to evacuate the process chamber 410.
During a curing process, substrate 425 can be subject to a purge
gas environment with or without vacuum conditions.
[0127] Furthermore, as shown in FIG. 10, process module 400 can
include a controller 460 coupled to process chamber 410, substrate
holder 420, thermal treatment device 430, drive system 435,
radiation source 440, gas injection system 450, and vacuum pumping
system 455. Controller 460 includes a microprocessor, a memory, and
a digital I/O port capable of generating control voltages
sufficient to communicate and activate inputs to the process module
400 as well as monitor outputs from the process module 400. A
program stored in the memory is utilized to interact with the
process module 400 according to a stored process recipe. The
controller 460 can be used to configure any number of processing
elements (410, 420, 430, 435, 440, 450, or 455), and the controller
460 can collect, provide, process, store, and display data from
processing elements. The controller 460 can include a number of
applications for controlling one or more of the processing
elements. For example, controller 460 can include a graphic user
interface (GUI) component (not shown) that can provide easy to use
interfaces that enable a user to monitor and/or control one or more
processing elements.
[0128] Referring now to FIG. 11, a process module 500 configured to
treat a dielectric film on a substrate is shown according to
another embodiment. As an example, the process module 500 may be
configured to cure a dielectric film. As another example, the
process module 400 may be configured to clean a dielectric film. As
yet another example, the process module 400 may be configured to
modify a surface on a dielectric film. Process module 500 includes
many of the same elements as those depicted in FIG. 10. The process
module 500 comprises process chamber 410 configured to produce a
clean, contaminant-free environment for curing a substrate 425
resting on substrate holder 420. Process module 500 includes a
first radiation source 540 configured to expose substrate 425
having the dielectric film to a first radiation source grouping of
EM radiation.
[0129] Process module 500 further includes a second radiation
source 545 configured to expose substrate 425 having the dielectric
film to a second radiation source grouping of EM radiation. Each
grouping of EM radiation is dedicated to a specific radiation
wave-band, and includes single, multiple, narrow-band, or broadband
EM wavelengths within that specific radiation wave-band. For
example, the first radiation source 540 can include an IR radiation
source configured to produce EM radiation in the IR spectrum.
Additionally, for example, the second radiation source 545 can
include a UV radiation source configured to produce EM radiation in
the UV spectrum. In this embodiment, IR treatment and UV treatment
of substrate 425 can be performed in a single process module.
[0130] Additionally, the gas or vapor jet 454 may be simultaneous
with and/or intersecting with first EM radiation 542 from first
radiation source 540 and/or second EM radiation 547 from second
radiation source 545.
[0131] Furthermore, as shown in FIG. 11, process module 500 can
include a controller 560 coupled to process chamber 410, substrate
holder 420, thermal treatment device 430, drive system 435, first
radiation source 540, second radiation source 545, gas injection
system 450, and vacuum pumping system 455. Controller 560 includes
a microprocessor, a memory, and a digital I/O port capable of
generating control voltages sufficient to communicate and activate
inputs to the process module 500 as well as monitor outputs from
the process module 500. A program stored in the memory is utilized
to interact with the process module 500 according to a stored
process recipe. The controller 560 can be used to configure any
number of processing elements (410, 420, 430, 435, 540, 545, 450,
or 455), and the controller 560 can collect, provide, process,
store, and display data from processing elements. The controller
460 can include a number of applications for controlling one or
more of the processing elements. For example, controller 560 can
include a graphic user interface (GUI) component (not shown) that
can provide easy to use interfaces that enable a user to monitor
and/or control one or more processing elements.
[0132] Various assemblies of EM radiation sources and optical
systems thereof may be found in pending U.S. patent application
Ser. No. 12/211,598, entitled "DIELECTRIC TREATMENT SYSTEM AND
METHOD OF OPERATING", filed on Sep. 16, 2008, and published as U.S.
Patent Application Publication No. 2010/0065758; the entire content
of which is herein incorporated by reference.
[0133] Referring now to FIG. 12, a schematic illustration of a
process module 1200 is presented according to an embodiment. The
process module 1200 includes a process chamber 1210 configured to
produce a clean, contaminant-free environment for curing, cleaning,
and/or modifying a substrate 1225 resting on substrate holder 1220.
Process module 1200 further includes a radiation source 1230
configured to expose substrate 1225 to EM radiation.
[0134] The radiation source 1230 includes a UV lamp 1240, and a
reflector 1250 for directing UV radiation 1242 from the UV lamp
1240 to substrate 1225. Alternatively, the radiation source 1230
may include an IR lamp. The reflector 1250 has a dichroic reflector
1254, and a non-absorbing reflector 1252 disposed between the UV
lamp 1240 and substrate 1225. The non-absorbing reflector 1252 is
configured to reflect UV radiation 1242 from the UV lamp 1240
towards the dichroic reflector 1254, wherein the non-absorbing
reflector 1252 substantially prevents direct UV radiation 1244 from
the UV lamp 1240 to substrate 1225. The dichroic reflector 1254 may
be utilized to select at least a portion of the UV radiation
spectrum emitted by the UV lamp 1240. For example, radiation source
1230 may be configured to irradiate substrate 1225 with UV
radiation containing emission ranging from about 250 nm to about
450 nm, or about 200 nm to about 300 nm, or about 200 nm to about
290 nm, depending on the type of dichroic coating. The dichroic
coating may include one or more dielectric layers.
[0135] Filtering by reflection on a dichroic coating usually does
not affect the original forward rays emitted directly from the UV
lamp. Consequently, a typical UV lamp using dichroic reflector
still emits a significant amount of emission outside of the desired
wavelength range, causing overheating of the substrate and
inefficient porogen removal. The inventors propose to use a second
reflection on reflectors with dichroic coating in order to obtain
the desired emission spectrum.
[0136] In one embodiment, the non-absorbing reflector 1252 is
separate from the UV lamp 1240, as shown in FIG. 11. In another
embodiment, the non-absorbing reflector 1252 includes a coating
applied to an underside of the UV lamp 1240.
[0137] The non-absorbing reflector 1252 may include a concave
reflecting surface oriented to face a concave reflecting surface of
the dichroic reflector 1254, and the non-absorbing reflector 1252
may be positioned between the dichroic reflector 1254 and the
substrate 1225. Additionally, an apex and a focus of the concave
reflecting surface of the non-absorbing reflector 1252, and an apex
and a focus of the concave reflecting surface of the dichroic
reflector 1254 may be collinear. Furthermore, the non-absorbing
reflector 1252 and/or the dichroic reflector 1254 may include a
cylindrical or spherical geometry having a circular, an elliptical,
a parabolic, or a hyperbolic cross-section. The shape, orientation,
and/or position of the non-absorbing reflector 1252 and/or the
dichroic reflector 1254 may be adjusted to provide optimal
irradiation of substrate 1225.
[0138] The process module 1200 may include a UV window 1260
disposed between the reflector 1250 and the substrate 1225.
[0139] The process module 1200 may further include an IR source,
such as an IR source that provides substantially monochromatic EM
radiation having a narrow band of wavelengths, or an IR laser.
Additionally, the process module 1200 may further include a
temperature control system coupled to the substrate holder 1220 and
configured to control a temperature of the substrate 1225.
Additionally, the process module 1200 may further include a drive
system 1212 coupled to the substrate holder 1220, and configured to
translate, or rotate, or both translate and rotate the substrate
holder 1220. Additionally yet, the process module 1200 may further
include a gas supply system coupled to the process chamber 1210,
and configured to introduce a purge gas and/or process gas to the
process chamber 1210. For example, the gas supply system may
include a nozzle configured to produce a gas or vapor jet emanating
from the nozzle along a jet axis in a direction towards substrate
1225.
[0140] Referring now to FIG. 13, a schematic illustration of a
process module 1300 is presented according to an embodiment. The
process module 1300 includes a process chamber 1310 configured to
produce a clean, contaminant-free environment for curing, cleaning,
and/or modifying a substrate 1325 resting on substrate holder 1320.
Process module 1300 further includes a radiation source 1330
configured to expose substrate 1325 to EM radiation.
[0141] The radiation source 1330 includes a UV lamp 1340, and a
reflector 1350 for directing UV radiation 1342 from the UV lamp
1340 to substrate 1325. Alternatively, the radiation source 1330
may include an IR lamp. The reflector 1350 has a dichroic reflector
1354, and a non-absorbing reflector 1352 disposed between the UV
lamp 1340 and substrate 1325. The non-absorbing reflector 1352 is
configured to reflect UV radiation 1342 from the UV lamp 1340
towards the dichroic reflector 1354, wherein the non-absorbing
reflector 1352 substantially prevents direct UV radiation 1244 from
the UV lamp 1340 to substrate 1325. The dichroic reflector 1354 may
be utilized to select at least a portion of the UV radiation
spectrum emitted by the UV lamp 1340. For example, radiation source
1330 may be configured to irradiate substrate 1325 with UV
radiation containing emission ranging from about 250 nm to about
450 nm, or about 200 nm to about 300 nm, or about 200 nm to about
290 nm, depending on the type of dichroic coating. The dichroic
coating may include one or more dielectric layers.
[0142] As shown in FIG. 12, the dichroic reflector 1354 comprises a
plurality of dichroic reflecting elements arranged in a first plane
1361 parallel with substrate 1325 and located above substrate 1325,
and the non-absorbing reflector 1252 comprises a plurality of
non-absorbing reflecting elements arranged in a second plane 1362
parallel with substrate 1325 and located above substrate 1325 and
below the first plane 1361. Further, the plurality of non-absorbing
reflecting elements and the plurality of dichroic reflecting
elements are arranged as pairs such that a one-to-one relationship
exists between each of the plurality of non-absorbing reflecting
elements and each of the plurality of dichroic reflecting
elements.
[0143] The non-absorbing reflector 1352 may include a concave
reflecting surface oriented to face a concave reflecting surface of
the dichroic reflector 1354, and the non-absorbing reflector 1352
may be positioned between the dichroic reflector 1354 and the
substrate 1325. The process module 1300 may include a UV window
1360 disposed between the reflector 1350 and the UV lamp 1340.
[0144] The shape, orientation, and/or position of the non-absorbing
reflector 1352 and/or the dichroic reflector 1354 may be adjusted
to provide optimal irradiation of substrate 1325.
[0145] The process module 1300 may further include an IR source,
such as an IR source that provides substantially monochromatic EM
radiation having a narrow band of wavelengths, or an IR laser.
Additionally, the process module 1300 may further include a
temperature control system coupled to the substrate holder 1320 and
configured to control a temperature of the substrate 1325.
Additionally, the process module 1300 may further include a drive
system 1312 coupled to the substrate holder 1320, and configured to
translate, or rotate, or both translate and rotate the substrate
holder 1320. Additionally yet, the process module 1300 may further
include a gas supply system coupled to the process chamber 1310,
and configured to introduce a purge gas and/or process gas to the
process chamber 1310. For example, the gas supply system may
include a nozzle configured to produce a gas or vapor jet emanating
from the nozzle along a jet axis in a direction towards substrate
1325.
[0146] Although only certain exemplary embodiments of this
invention have been described in detail above, those skilled in the
art will readily appreciate that many modifications are possible in
the exemplary embodiments without materially departing from the
novel teachings and advantages of this invention. Accordingly, all
such modifications are intended to be included within the scope of
this invention.
* * * * *