U.S. patent application number 12/583949 was filed with the patent office on 2011-03-03 for method for forming a via in a substrate and substrate with a via.
Invention is credited to Meng-Jen Wang, Kuo-Pin Yang.
Application Number | 20110048788 12/583949 |
Document ID | / |
Family ID | 43623164 |
Filed Date | 2011-03-03 |
United States Patent
Application |
20110048788 |
Kind Code |
A1 |
Wang; Meng-Jen ; et
al. |
March 3, 2011 |
Method for forming a via in a substrate and substrate with a
via
Abstract
The present invention relates to a method for forming a via in a
substrate and a substrate with a via. The method includes the
following steps: (a) providing a substrate having a first surface
and a second surface; (b) forming a groove that has a side wall and
a bottom wall on the first surface of the substrate; (c) forming a
conductive metal on the side wall and the bottom wall of the groove
so as to form a central groove; (d) forming an annular groove that
surrounds the conductive metal on the first surface of the
substrate; (e) forming an insulating material in the central groove
and the annular groove; and (f) removing part of the second surface
of the substrate to expose the conductive metal and the insulating
material.
Inventors: |
Wang; Meng-Jen; (Kaohsiung,
TW) ; Yang; Kuo-Pin; (Kaohsiung, TW) |
Family ID: |
43623164 |
Appl. No.: |
12/583949 |
Filed: |
August 28, 2009 |
Current U.S.
Class: |
174/262 ;
216/18 |
Current CPC
Class: |
H01L 2924/0002 20130101;
H01L 2924/0002 20130101; H05K 3/061 20130101; H01L 23/481 20130101;
H05K 2203/0323 20130101; H05K 2203/1476 20130101; H05K 3/445
20130101; H01L 2924/00 20130101; H01L 21/76898 20130101 |
Class at
Publication: |
174/262 ;
216/18 |
International
Class: |
H05K 1/11 20060101
H05K001/11; H01B 13/00 20060101 H01B013/00 |
Claims
1. A method for forming a via in a substrate, comprising: (a)
providing a substrate having a first surface and a second surface;
(b) forming a groove that has a side wall and a bottom wall on the
first surface of the substrate; (c) forming a conductive metal on
the side wall and the bottom wall of the groove so as to form a
central groove; (d) forming an annular groove that surrounds the
conductive metal on the first surface of the substrate; (e) forming
an insulating material in the central groove and the annular
groove; and (f) removing part of the second surface of the
substrate to expose the conductive metal and the insulating
material.
2. The method as claimed in claim 1, wherein Step (b) comprises:
(b1) forming a first photo resist layer on the first surface of the
substrate; (b2) forming a first opening on the first photo resist
layer; and (b3) forming the groove on the substrate according to
the first opening.
3. The method as claimed in claim 1, further comprising a step of
removing the conductive metal that is disposed on the first surface
of the substrate after step (c).
4. The method as claimed in claim 1, wherein Step (d) comprises:
(d1) forming a second photo resist layer on the first surface of
the substrate; (d2) forming a second opening on the second photo
resist layer so that the position of the second opening corresponds
to the groove, and the diameter of the second opening is larger
than that of the groove; and (d3) forming the annular groove on the
substrate according to the second opening.
5. The method as claimed in claim 1, wherein in Step (d), the
annular groove does not penetrate through the substrate.
6. The method as claimed in claim 1, wherein in Step (d), the depth
of the annular groove is equal to the height of the conductive
metal.
7. The method as claimed in claim 1, wherein in Step (d), the depth
of the annular groove is less than the height of the conductive
metal.
8. The method as claimed in claim 1, wherein Step (e) comprises:
(e1) dispersing a polymer at a position corresponding to the
central groove and the annular groove; and (e2) impelling the
polymer into the central groove and the annular groove by vacuuming
so as to form the insulating material.
9. The method as claimed in claim 1, wherein Step (e) comprises:
(e1) forming a plurality of first vents and a plurality of second
vents, wherein the first vents connect the central groove and the
second surface of the substrate, and the second vents connect the
annular groove and the second surface of the substrate; (e2)
dispersing a polymer at a position corresponding to the central
groove and the annular groove; and (e3) filling the central groove,
the annular groove, the first vents and the second vents with the
polymer so as to form the insulating material.
10. The method as claimed in claim 1, further comprising a step of
removing the insulating material that is disposed on the first
surface of the substrate after step (e).
11. The method as claimed in claim 1, further comprising a step of
forming at least one redistribution layer on one of or both of the
first surface and the second surface of the substrate after step
(f).
12. A method for forming a via in a substrate, comprising: (a)
providing a substrate, the substrate comprising a substrate body
and a circuit layer, the substrate body having a first surface and
a second surface, the circuit layer being disposed on the second
surface of the substrate body; (b) forming a groove that has a side
wall and a bottom wall on the first surface of the substrate body,
wherein the groove penetrates the substrate body and exposes the
circuit layer; (c) forming a conductive metal on the side wall and
the bottom wall of the groove so as to form a central groove,
wherein the conductive metal contacts the circuit layer; (d)
forming an annular groove that surrounds the conductive metal on
the first surface of the substrate body; and (e) forming an
insulating material in the central groove and the annular
groove.
13. The method as claimed in claim 12, wherein Step (b) comprises:
(b1) forming a first photo resist layer on the first surface of the
substrate body; (b2) forming a first opening on the first photo
resist layer; and (b3) forming the groove on the substrate body
according to the first opening.
14. The method as claimed in claim 12, further comprising a step of
removing the conductive metal that is disposed on the first surface
of the substrate body after step (c).
15. The method as claimed in claim 12, wherein Step (d) comprises:
(d1) forming a second photo resist layer on the first surface of
the substrate body; (d2) forming a second opening on the second
photo resist layer so that the position of the second opening
corresponds to the groove, and the diameter of the second opening
is larger than that of the groove; and (d3) forming the annular
groove on the substrate body according to the second opening.
16. The method as claimed in claim 12, wherein Step (e) comprises:
(e1) dispersing a polymer at a position corresponding to the
central groove and the annular groove; and (e2) impelling the
polymer into the central groove and the annular groove by vacuuming
so as to form the insulating material.
17. The method as claimed in claim 12, further comprising a step of
removing the insulating material that is disposed on the first
surface of the substrate body after step (e).
18. The method as claimed in claim 12, further comprising a step of
forming a redistribution layer on the first surface of the
substrate body after step (e).
19. A substrate with a via, comprising: a substrate, comprising a
substrate body and a circuit layer, the substrate body having a
first surface, a second surface and a via, the via penetrating the
substrate body, the circuit layer being disposed on the second
surface of the substrate body; a conductive metal, disposed in the
via, the conductive metal having an annular side portion and a
bottom portion, wherein the annular side portion defines a central
groove therein, an annular groove is formed between the annular
side portion and a side wall of the via, and the bottom portion
contacts the circuit layer; and an insulating material, disposed in
the central groove and the annular groove.
20. The substrate as claimed in claim 19, further comprising a
redistribution layer disposed on the first surface of the substrate
body, wherein the redistribution layer contacts the conductive
metal.
21. The substrate as claimed in claim 20, further comprising a
passivation layer disposed on the first surface of the substrate
body, wherein the passivation layer has an opening, and the
redistribution layer is disposed in the opening.
22. The substrate as claimed in claim 19, wherein the insulating
material further disposed on the first surface of the substrate
body, wherein the insulating material has an opening, and the
redistribution layer is disposed in the opening.
23. The substrate as claimed in claim 19, wherein the thickness of
the conductive metal is equal to or greater than 6 .mu.m.
24. The substrate as claimed in claim 19, wherein the thickness of
the insulating material in the annular groove is 3 to 10 .mu.m.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a method for forming a via
in a substrate and a substrate with a via, and more particularly to
a method for forming an insulating layer on a side wall of a via in
a substrate and a substrate with a via.
[0003] 2. Description of the Related Art
[0004] FIGS. 1 to 3 show schematic views of a conventional method
for forming a via in a substrate. First, referring to FIG. 1, a
substrate 1 is provided. The substrate 1 has a first surface 11 and
a second surface 12. Then, a plurality of grooves 13 are formed on
the first surface 11 of the substrate 1. An insulating layer 14 is
then formed on the side wall of the grooves 13 by chemical vapor
deposition, and a plurality of accommodating spaces 15 are formed.
The material of the insulating layer 14 is usually silicon
dioxide.
[0005] Then, referring to FIG. 2, the accommodating spaces 15 are
filled with a conductive metal 16. The material of the conductive
metal 16 is usually copper. Finally, the first surface 11 and the
second surface 12 of the substrate 1 are ground or etched so as to
expose the conductive metal 16, as shown in FIG. 3.
[0006] In the conventional method, the insulating layer 14 is
formed by chemical vapor deposition, so that the thickness of the
insulating layer 14 on the side wall of the grooves 13 is limited,
and is usually under 0.5 .mu.m. Moreover, the thickness of the
insulating layer 14 on the side wall of the grooves 13 is not even,
that is, the thickness of the insulating layer 14 on the upper side
wall of the grooves 13 is not exactly equal to that on the lower
side wall of the grooves 13. Thus, the electrical capacity is not
uniform.
[0007] Therefore, it is necessary to provide a method for forming a
via in a substrate to solve the above problems.
SUMMARY OF THE INVENTION
[0008] The present invention is directed to a method for forming a
via in a substrate. The method comprises the following steps: (a)
providing a substrate having a first surface and a second surface;
(b) forming a groove that has a side wall and a bottom wall on the
first surface of the substrate; (c) forming a conductive metal on
the side wall and the bottom wall of the groove so as to form a
central groove; (d) forming an annular groove that surrounds the
conductive metal on the first surface of the substrate; (e) forming
an insulating material in the central groove and the annular
groove; and (f) removing part of the second surface of the
substrate to expose the conductive metal and the insulating
material.
[0009] The present invention is further directed to a method for
forming a via in a substrate. The method comprises the following
steps: (a) providing a substrate, the substrate comprising a
substrate body and a circuit layer, the substrate body having a
first surface and a second surface, the circuit layer being
disposed on the second surface of the substrate body; (b) forming a
groove that has a side wall and a bottom wall on the first surface
of the substrate body, wherein the groove penetrates the substrate
body and exposes the circuit layer; (c) forming a conductive metal
on the side wall and the bottom wall of the groove so as to form a
central groove, wherein the conductive metal contacts the circuit
layer; (d) forming an annular groove that surrounds the conductive
metal on the first surface of the substrate body; and (e) forming
an insulating material in the central groove and the annular
groove.
[0010] The present invention is further directed to a substrate
with a via. The substrate with a via comprises a substrate, a
conductive metal and an insulating material. The substrate
comprised a substrate body and a circuit layer. The substrate body
has a first surface, a second surface and a via. The via penetrates
the substrate body. The circuit layer is disposed on the second
surface of the substrate body. The conductive metal is disposed in
the via. The conductive metal has an annular side portion and a
bottom portion, wherein the annular side portion defines a central
groove therein. An annular groove is formed between the annular
side portion and the side wall of the via. The bottom portion
contacts the circuit layer. The insulating material is disposed in
the central groove and the annular groove.
[0011] In the present invention, thicker insulating material can be
formed in the via. Also, the thickness of the insulating material
in the via is even. Moreover, polymer is used as an insulating
material in the present invention, so that polymers with different
materials can be chosen for specific processes. Additionally, the
insulating material in the central groove and the annular groove is
formed simultaneously. Therefore, overall manufacture process of
the substrate is simplified, and the manufacture cost is
reduced.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIGS. 1 to 3 are schematic views of a conventional method
for forming a via in a substrate;
[0013] FIGS. 4 to 19 are schematic views of a method for forming a
via in a substrate according to a first embodiment of the present
invention; and
[0014] FIGS. 20 to 33 are schematic views of a method for forming a
via in a substrate according to a second embodiment of the present
invention.
DETAILED DESCRIPTION OF THE INVENTION
[0015] FIGS. 4 to 19 show schematic views of a method for forming a
via in a substrate according to a first embodiment of the present
invention. Referring to FIG. 4, a top view of the substrate, and
FIG. 5, a cross-sectional view along line 5-5 in FIG. 4, first, a
substrate 21 is provided. The substrate 21 has a first surface 211
and a second surface 212. The substrate 21 is, for example, a real
wafer (functional wafer), a dummy wafer or a silicon substrate.
Then, a groove 231 (FIG. 6) is formed on the first surface 211 of
the substrate 21. The groove 231 has a side wall 232 and a bottom
wall 233. In the embodiment, a first photo resist layer 241 is
formed on the first surface 211 of the substrate 21, and a first
opening 242 is formed on the first photo resist layer 241.
[0016] Referring to FIG. 6, the groove 231 is formed on the
substrate 21 by etching according to the first opening 242. The
groove 231 is disposed on the first surface 211 of the substrate
21, and has the side wall 232 and the bottom wall 233. The first
photo resist layer 241 is then removed.
[0017] Referring to FIG. 7, a conductive metal 222 is formed on the
side wall 232 and the bottom wall 233 of the groove 231 and the
first surface 211 of the substrate 21 by electroplating, so as to
form a central groove 234. In the embodiment, the material of the
conductive metal 222 is copper, and the thickness of the conductive
metal 222 is equal to or greater than 6 .mu.m.
[0018] Then, referring to FIG. 8, the conductive metal 222 that is
disposed on the first surface 211 of the substrate 21 is removed by
etching or grinding.
[0019] Referring to FIGS. 9 to 11, an annular groove 235 is formed
on the first surface 211 of the substrate 21. The annular groove
235 surrounds the conductive metal 222 (FIG. 11). Referring to FIG.
9, a top view of the substrate, and FIG. 10, a cross-sectional view
along line 10-10 in FIG. 9, in the embodiment, a second photo
resist layer 243 is formed on the first surface 211 of the
substrate 21, and a second opening 244 is formed on the second
photo resist layer 243. The position of the second opening 244
corresponds to the groove 231, and the diameter of the second
opening 244 is larger than that of the groove 231. Then, referring
to FIG. 11, the annular groove 235 is formed on the substrate 21 by
etching according to the second opening 244. The annular groove 235
surrounds the conductive metal 222, and does not penetrate through
the substrate 21.
[0020] In the embodiment, the level of the bottom wall of the
annular groove 235 is equal to that of the bottom portion of the
conductive metal 222. That is, the depth of the annular groove 235
is equal to the height of the conductive metal 222. However, it is
understood that the depth of the annular groove 235 may be less
than the height of the conductive metal 222, so that the bottom
portion of the conductive metal 222 is embedded in the substrate
21, as shown in FIG. 12.
[0021] Referring to FIG. 13, the second photo resist layer 243 is
then removed.
[0022] Then, referring to FIGS. 14 to 17, an insulating material 22
is formed in the central groove 234 and the annular groove 235. In
the embodiment, the insulating material 22 is a polymer 263, and
the thickness of the insulating material 22 in the annular groove
235 is 3 to 10 .mu.m. In the present invention, the method for
forming the insulating material 22 in the central groove 234 and
the annular groove 235 includes but is not limited to the following
three methods.
[0023] The first method is that the polymer 263 is dispersed on the
first surface 211 of the substrate 21, and the position of the
polymer 263 corresponds to the central groove 234 and the annular
groove 235, as shown in FIG. 14. Alternatively, the polymer 263 can
be partially dispersed at a position corresponding to the central
groove 234 and the annular groove 235. Then, the polymer 263 is
impelled into the central groove 234 and the annular groove 235 by
vacuuming so as to form the insulating material 22, as shown in
FIG. 15.
[0024] The second method is that a plurality of first vents 237 and
a plurality of second vents 238 are formed, as shown in FIG. 16, a
top view of the substrate 21, and FIG. 17, a cross-sectional view
along line 17-17 in FIG. 16. The first vents 237 connect the
central groove 234 and the second surface 212 of the substrate 21,
and the second vents 238 connect the annular groove 235 and the
second surface 212 of the substrate 21. Then, the polymer 263 is
dispersed on the first surface 211 of the substrate 21, and the
position of the polymer 263 corresponds to the central groove 234
and the annular groove 235. Alternatively, the polymer 263 can be
partially dispersed at a position corresponding to the central
groove 234 and the annular groove 235. The central groove 234, the
annular groove 235, the first vents 237 and the second vents 238
are then filled with the polymer 263 so as to form the insulating
material 22.
[0025] The third method is that the polymer 263 is atomized and
deposited in the central groove 234 and annular groove 235 by spray
coating so as to form the insulating material 22.
[0026] Then, referring to FIGS. 18 and 19, the insulating material
22 (the polymer 263) that is disposed on the first surface 211 of
the substrate 21 is removed by etching or grinding the first
surface 211 of the substrate 21. Alternatively, part of the first
surface 211 and part of the second surface 212 of the substrate 21
are removed by etching or grinding so as to expose the conductive
metal 222 and the insulating material 22. A substrate 2 with a via
according to the first embodiment of the present invention is
formed. In the embodiment, the via includes the insulating material
22 and the conductive metal 222.
[0027] Preferably, at least one redistribution layer (see e.g.,
FIG. 33) is formed on the first surface 211 or the second surface
212 of the substrate 21, or both of the first surface 211 and the
second surface 212 of the substrate 21.
[0028] In the present invention, thicker insulating material 22 can
be formed in the central groove 234 and the annular groove 235 of
the via. Also, the thickness of the insulating material 22 in the
central groove 234 and the annular groove 235 of the via is even.
Moreover, the polymer 263 is used as an insulating material 22 in
the present invention, so that polymers with different materials
can be chosen for specific processes. Additionally, the insulating
material 22 in the central groove 234 and the annular groove 235 is
formed simultaneously. That is, the insulating material 22 in the
central groove 234 and the annular groove 235 is formed at a same
step, so that a manufacture step is omitted. Therefore, overall
manufacture process of the substrate 2 is simplified, and the
manufacture cost is reduced.
[0029] FIGS. 20 to 33 show schematic views of a method for forming
a via in a substrate according to a second embodiment of the
present invention. Referring to FIG. 20, a top view of the
substrate, and FIG. 21, a cross-sectional view along line 21-21 in
FIG. 20, first, a substrate is provided. The substrate is a real
wafer (functional wafer) which comprises a substrate body 31 and a
circuit layer 314. The substrate body 31 has a first surface 311
and a second surface 312, and the circuit layer 314 is disposed on
the second surface 312 of the substrate body 31. Preferably, the
substrate further comprises a protection layer 313 (e.g., an oxide
layer) that is disposed between the circuit layer 314 and the
second surface 312 of the substrate body 31.
[0030] Then, a groove 331 (FIG. 22) is formed on the first surface
311 of the substrate body 31. The groove 331 has a side wall 332
and a bottom wall 333. In the embodiment, a first photo resist
layer 341 is formed on the first surface 311 of the substrate body
31, and a first opening 342 is formed on the first photo resist
layer 341.
[0031] Referring to FIG. 22, the groove 331 is formed on the
substrate body 31 by etching according to the first opening 342.
The groove 331 is disposed on the first surface 311 of the
substrate body 31, and has the side wall 332 and the bottom wall
333. The groove 331 penetrates the substrate body 31 and the
protection layer 313, and exposes the circuit layer 314. The first
photo resist layer 341 is then removed.
[0032] Referring to FIG. 23, a conductive metal 322 is formed on
the side wall 332 and the bottom wall 333 of the groove 331 and the
first surface 311 of the substrate body 31 by electroplating, so as
to form a central groove 334. The conductive metal 322 contacts the
circuit layer 314. In the embodiment, the material of the
conductive metal 322 is copper, and the thickness of the conductive
metal 322 is equal to or greater than 6 .mu.m.
[0033] Then, referring to FIG. 24, the conductive metal 322 that is
disposed on the first surface 311 of the substrate body 31 is
removed by etching or grinding.
[0034] Referring to FIGS. 25 to 27, an annular groove 335 is formed
on the first surface 311 of the substrate body 31. The annular
groove 335 surrounds the conductive metal 322 (FIG. 27). Referring
to FIG. 25, a top view of the substrate, and FIG. 26, a
cross-sectional view along line 26-26 in FIG. 25, in the
embodiment, a second photo resist layer 343 is formed on the first
surface 311 of the substrate body 31, and a second opening 344 is
formed on the second photo resist layer 343. The position of the
second opening 344 corresponds to the groove 331, and the diameter
of the second opening 344 is larger than that of the groove 331.
Then, referring to FIG. 27, the annular groove 335 is formed on the
substrate body 31 by etching according to the second opening 344.
The annular groove 335 surrounds the conductive metal 322. In the
embodiment, the annular groove 335 penetrates the substrate body
31, but does not penetrate the protection layer 313.
[0035] Referring to FIG. 28, the second photo resist layer 343 is
then removed.
[0036] Then, referring to FIGS. 29 to 30, an insulating material 32
is formed in the central groove 334 and the annular groove 335. In
the embodiment, the insulating material 32 is a polymer 363, and
the thickness of the insulating material 32 in the annular groove
335 is 3 to 10 .mu.m. In the present invention, the method for
forming the insulating material 32 in the central groove 334 and
the annular groove 335 includes but is not limited to the following
two methods.
[0037] The first method is that the polymer 363 is dispersed on the
first surface 311 of the substrate body 31, and the position of the
polymer 363 corresponds to the central groove 334 and the annular
groove 335, as shown in FIG. 29. Alternatively, the polymer 363 can
be partially dispersed at a position corresponding to the central
groove 334 and the annular groove 335. Then, the polymer 363 is
impelled into the central groove 334 and the annular groove 335 by
vacuuming so as to form the insulating material 32, as shown in
FIG. 30.
[0038] The second method is that the polymer 363 is atomized and
deposited in the central groove 334 and annular groove 335 by spray
coating so as to form the insulating material 32.
[0039] Then, referring to FIGS. 31 and 32, the insulating material
32 (the polymer 363) that is disposed on the first surface 311 of
the substrate body 31 is removed by etching or grinding the first
surface 311 of the substrate body 31. A substrate 3 with a via
according to the second embodiment of the present invention is
formed. In the embodiment, the via includes the insulating material
32 and the conductive metal 322.
[0040] Preferably, the method further comprises the following
steps: forming a passivation layer (see, e.g., FIG. 33) on the
first surface 311 of the substrate body 31; forming an opening on
the passivation layer; and forming a redistribution layer (see,
e.g., FIG. 33) on the first surface 311 of the substrate body 31
and in the opening. However, it is understood that if the polymer
363 (FIG. 30) is photosensitive, the insulating material 32 (the
polymer 363) that is disposed on the first surface 311 of the
substrate body 31 is not necessary to be removed. Then, an opening
is formed on the polymer 363, and a redistribution layer 37 is
formed in the opening, as shown in FIG. 33.
[0041] FIG. 33 shows a schematic view of a substrate with a via
according to a second embodiment of the present invention. The
substrate 4 with a via comprises a substrate, a conductive metal
322 and an insulating material 32. The substrate comprises a
substrate body 31 and a circuit layer 314. The substrate body 31
has a first surface 311, a second surface 312 and a via 315. The
via 315 penetrates the substrate body 31. The circuit layer 314 is
disposed on the second surface 312 of the substrate body 31.
[0042] The conductive metal 322 is disposed in the via 315. The
conductive metal 322 has an annular side portion 3221 and a bottom
portion 3222, wherein the annular side portion 3221 defines a
central groove 334 therein. An annular groove 335 is formed between
the annular side portion 3221 of the conductive metal 322 and the
side wall of the via 315, and the bottom portion 3222 of the
conductive metal 322 contacts the circuit layer 314. In the
embodiment, the material of the conductive metal 322 is copper, and
the thickness of the conductive metal 322 is equal to or greater
than 6 .mu.m.
[0043] The insulating material 32 is disposed in the central groove
334 and the annular groove 335. In the embodiment, the insulating
material 32 is a polymer 363, and the thickness of the insulating
material 32 in the annular groove 335 is 3 to 10 .mu.m.
[0044] Preferably, the substrate 4 further comprises a protection
layer 313 (e.g., an oxide layer) and a redistribution layer 37. The
protection layer 313 is disposed between the circuit layer 314 and
the second surface 312 of the substrate body 31, and the conductive
metal 322 penetrates the protection layer 313.
[0045] The redistribution layer 37 is disposed on the first surface
311 of the substrate body 31, wherein the redistribution layer 37
contacts the conductive metal 322. In the embodiment of FIG. 33,
the polymer 363 can be photosensitive and has an opening. The
redistribution layer 37 is disposed in the opening.
[0046] However, it is understood that if the polymer 363 is not
photosensitive, the insulating material 32 (the polymer 363) that
is disposed on the first surface 311 of the substrate body 31 must
be removed. Then, a passivation layer 38 is formed on the first
surface 311 of the substrate body 31, an opening is formed on the
passivation layer 38, and a redistribution layer 37 is formed on
the first surface 311 of the substrate body 31 and in the opening.
Therefore, the substrate further comprises the passivation layer
disposed on the first surface 311 of the substrate body 31, wherein
the passivation layer has an opening, and the redistribution layer
is disposed in the opening.
[0047] While several embodiments of the present invention have been
illustrated and described, various modifications and improvements
can be made by those skilled in the art. The embodiments of the
present invention are therefore described in an illustrative but
not restrictive sense. It is intended that the present invention
should not be limited to the particular forms as illustrated, and
that all modifications which maintain the spirit and scope of the
present invention are within the scope defined in the appended
claims.
* * * * *