U.S. patent application number 12/887199 was filed with the patent office on 2011-01-13 for light-emitting diode device and manufacturing method thereof.
Invention is credited to Cheng-Ta KUO, Yu-Cheng YANG, Kuo-Hui YU.
Application Number | 20110006701 12/887199 |
Document ID | / |
Family ID | 40430873 |
Filed Date | 2011-01-13 |
United States Patent
Application |
20110006701 |
Kind Code |
A1 |
YU; Kuo-Hui ; et
al. |
January 13, 2011 |
LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF
Abstract
A light-emitting diode (LED) device and manufacturing methods
thereof are provided, wherein the LED device comprises a substrate,
a first type conductivity semiconductor layer, an active layer, a
second type conductivity semiconductor layer, a transparent
conductive oxide stack structure, a first electrode, and a second
electrode. The first semiconductor layer on the substrate has a
first portion and a second portion. The active layer and the second
semiconductor layer are subsequently set on the first portion. The
transparent conductive oxide stack structure on the second
semiconductor layer has at least two resistant interfaces. The
first electrode is above the second portion, and the second
electrode is above the transparent conductive oxide stack
structure.
Inventors: |
YU; Kuo-Hui; (Hsinchu,
TW) ; YANG; Yu-Cheng; (Hsinchu, TW) ; KUO;
Cheng-Ta; (Hsinchu, TW) |
Correspondence
Address: |
Muncy, Geissler, Olds & Lowe, PLLC
4000 Legato Road, Suite 310
FAIRFAX
VA
22033
US
|
Family ID: |
40430873 |
Appl. No.: |
12/887199 |
Filed: |
September 21, 2010 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
12230887 |
Sep 8, 2008 |
7821026 |
|
|
12887199 |
|
|
|
|
Current U.S.
Class: |
315/291 ; 257/98;
257/99; 257/E33.064; 362/608 |
Current CPC
Class: |
H01L 33/42 20130101;
H01L 33/0093 20200501; H01L 33/32 20130101 |
Class at
Publication: |
315/291 ; 257/99;
257/98; 362/608; 257/E33.064 |
International
Class: |
H05B 37/02 20060101
H05B037/02; H01L 33/42 20100101 H01L033/42; H01L 33/46 20100101
H01L033/46; F21V 7/22 20060101 F21V007/22 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 7, 2007 |
TW |
096133779 |
Claims
1. A light-emitting diode device structure comprising: a substrate;
an epitaxial stack disposed on the substrate; and a transparent
conductive oxide stack structure comprises a plurality of
transparent conductive layers disposed on the epitaxial stack,
wherein any two adjacent layers of the plurality of transparent
conductive layers comprises the same materials with different
composition ratios; wherein the transparent conductive oxide stack
structure comprises a first transparent conductive layer having a
first resistance disposed on the epitaxial stack, a second
transparent conductive layer having a second resistance disposed on
the first transparent conductive layer, and a third transparent
conductive layer having a third resistance disposed on the second
transparent conductive layer; wherein the second resistance is
between the first resistance and the third resistance.
2. The light-emitting diode device structure according to claim 1,
wherein the first resistance is smaller than the second resistance,
and the second resistance is smaller than the third resistance.
3. The light-emitting diode device structure according to claim 1,
wherein the first resistance is lager than the second resistance,
and the second resistance is larger than the third resistance.
4. The light-emitting diode device structure according to claim 1,
wherein the transparent conductive oxide stack structure can be
indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide
(CTO), zinc oxide (ZnO), indium oxide (In.sub.2O.sub.3), tin oxide
(SnO.sub.2), copper aluminum oxide, aluminum gallium oxide,
aluminum strontium oxide or aluminum zinc oxide (AZO) or the
combinations thereof.
5. The light-emitting diode device structure according to claim 1,
further comprising: an adhesion layer disposed on the substrate; a
reflecting layer disposed on the adhesion layer; and a contact
layer disposed on the reflecting layer and contacted with the
epitaxial stack.
6. A light-emitting diode device structure comprising: a substrate;
a first transparent conductive oxide stack structure comprising a
plurality of transparent conductive layers and at least two
resistant interfaces disposed on the substrate, wherein any two
adjacent layers of the plurality of transparent conductive layers
comprises the same materials with different composition ratios; an
the epitaxial stack disposed on the first transparent conductive
oxide stack structure.
7. The light-emitting diode device structure according to claim 6,
wherein the first transparent conductive oxide stack structure
comprises: a first transparent conductive layer having a first
resistance disposed on the substrate; a second transparent
conductive layer having a second resistance disposed on the first
transparent conductive layer; and a third transparent conductive
layer having a third resistance disposed on the second transparent
conductive layer; wherein the second resistance is different from
the first resistance and the third resistance.
8. The light-emitting diode device structure according to claim 7,
wherein the first resistance is smaller than the second resistance,
and the second resistance is smaller than the third resistance.
9. The light-emitting diode device structure according to claim 7,
wherein the first resistance is lager than the second resistance,
and the second resistance is larger than the third resistance.
10. The light-emitting diode device structure according to claim 6,
further comprising a second transparent conductive oxide stack
structure disposed one the epitaxial stack.
11. The light-emitting diode device structure according to claim
10, wherein the second transparent conductive oxide stack structure
comprises: a fourth transparent conductive layer having a fourth
resistance disposed on the epitaxial stack; a fifth transparent
conductive layer having a fifth resistance disposed on the fourth
transparent conductive layer; and a sixth transparent conductive
layer having a sixth resistance disposed on the fifth transparent
conductive layer; wherein the fifth resistance is different from
the fourth resistance and the sixth resistance.
12. The light-emitting diode device structure according to claim
10, wherein the first transparent conductive oxide stack structure
and the second transparent conductive oxide stack structure can be
indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide
(CTO), zinc oxide (ZnO), indium oxide (In.sub.2O.sub.3), tin oxide
(SnO.sub.2), copper aluminum oxide, aluminum gallium oxide,
aluminum strontium oxide or aluminum zinc oxide (AZO) or the
combinations thereof.
13. The light-emitting diode device structure according to claim
10, wherein all of the layers of the first or second transparent
conductive oxide stack structure comprise the same materials with
different composition ratios.
14. The light-emitting diode device structure according to claim 6,
further comprising: an adhesion layer disposed on the substrate; a
reflecting layer disposed on the adhesion layer; and a contact
layer disposed on the reflecting layer and contacted with the first
transparent conductive oxide stack structure.
15. A backlight module comprising: a back bezel having a bottom
side and a light extraction side; a reflector disposed between the
bottom side and the light extraction side; a light source
comprising the light-emitting diode device according to claim 1
disposed between the reflector and the light extraction side; and
an optical film disposed between the light source and the light
extraction side.
16. A lighting device comprising: a light source comprising the
light-emitting diode device according to claim 1; a power
supplement system electrically adhering to the light source; and a
control element electrically adhering to the power supplement
system to control the current to the light source.
Description
REFERENCE TO RELATED APPLICATION
[0001] This application is a Continuation of co-pending application
Ser. No. 12/230,887, filed on Sep. 8, 2008, and for which priority
is claimed under 35 U.S.C. .sctn.120; and this application claims
priority of Application No. 096133779 filed in Taiwan on Sep. 7,
2007 under 35 U.S.C. .sctn.119; the entire contents of all of which
are hereby incorporated by reference.
BACKGROUND
[0002] 1. Technical Field
[0003] A light-emitting diode (LED) device and manufacturing
methods thereof are provided, and more particularly to a LED device
having a transparent conductive oxide (TCO) stack structure and
manufacturing methods thereof.
[0004] 2. Description of the Related Art
[0005] The light-emitting diodes (LEDs) of the solid-state lighting
elements have the characteristics of low power consumption, low
heat generation, long operational life, shockproof, small volume,
quick response and good opto-electrical property like emitting
stable wavelength and so on, so the LEDs have been widely used in
household appliances, indicator light of instruments, optics and
photonics products, etc. As the optics and photonics technology
develops, the solid-state lighting elements have great progress in
increasing the light efficiency, operation life and the brightness.
LEDs become the main stream of the lighting devices in the near
future.
[0006] FIG. 1 shows a cross-sectional view of conventional
light-emitting diode device 100. The conventional light-emitting
diode device includes a substrate 101, an n-type semiconductor
layer 102 epitaxially grown on the substrate 101, an active layer
103, a p-type semiconductor layer 104, a front side electrode 105,
and a back side electrode 106 wherein the front side electrode 105
is disposed on the light extraction side of the light-emitting
diode device 100 and the back side electrode 106 is formed on the
side of the substrate 101 where no epitaxial structure formed on.
The driving current R1 is driven from the front side electrode 105
to the p-type semiconductor layer 104, and through the active layer
103 having a double heterostructure or a multi-quantum well
structure to emit light. Generally speaking, in order to improve
the light efficiency of the light-emitting diode device 100, the
current from the front side electrode 105 needs to be spread to the
edge of the light-emitting diode device 100 effectively to make the
active layer 103 emit light uniformly.
[0007] Because of the high contact resistance between the
semiconductor layer and the metal electrode of the light-emitting
diode device 100, the current R1 cannot spread to the active layer
103 effectively. The current R1 normally flows with the shortest
pathway passing through the active layer 103 to the back side
electrode 106 and the current crowding effect is therefore
occurred. It restrains the lighting area in a portion of the active
layer 103 below the front side electrode 105, and greatly
influences the light efficiency of the active layer 103.
[0008] A known art to resolve the issue is to form a current
blocking layer of native conductive oxide by thermal annealing the
transparent electrode, or to form a thin film of p-type metal oxide
like Li.sub.xNi.sub.1-xO or a p-type nitride like ZrAlN between the
outer layer of the p-type epitaxial stack and the transparent
electrode of the light-emitting diode to combine with the
transparent electrode so the current from the transparent electrode
to the light-emitting diode spreads uniformly and the light
efficiency of the active layer 103 is increased.
[0009] Nevertheless, the native conductive oxide or the hybrid
transparent electrode of the p-type metal oxide like
Li.sub.xNi.sub.1-xO or the p-type nitride like ZrAlN have the issue
of the high contact resistance with the stack structure of the
light-emitting diode. In order to lower the contact resistance,
small band gap semiconductor materials are needed to form the stack
structure. The flexibility to choose material is therefore limited,
and the light efficiency of the light-emitting diode is indirectly
influenced because of the high operation voltage.
[0010] Therefore, a light-emitting diode having low contact
resistance, efficient current spreading and better light efficiency
with simpler processes is needed.
SUMMARY
[0011] A light-emitting diode device is disclosed including a
substrate, a first type conductivity semiconductor layer, an active
layer, a second type conductivity semiconductor layer, a
transparent conductive oxide stack structure, a first electrode,
and a second electrode. The first type conductivity semiconductor
layer on the substrate has a first portion and a second portion.
The active layer is subsequently formed on the first portion. The
second type conductivity semiconductor layer is formed on the
active layer. The transparent conductive oxide stack structure
formed on the second semiconductor layer has at least two resistant
interfaces. The first electrode is formed on the second portion,
and the second electrode is formed on the transparent conductive
oxide stack structure.
[0012] A manufacturing process of the light-emitting diode device
is disclosed wherein the process including providing a growth
substrate; forming a first type conductivity semiconductor layer on
the substrate; forming an active layer on the first semiconductor
layer; forming a second type conductivity semiconductor layer on
the active layer; removing a portion of the second semiconductor
layer and the active layer to expose a portion of the first
semiconductor layer; forming a transparent conductive oxide stack
structure having at least two resistant interfaces on the remaining
portion of the second semiconductor layer; forming a first
electrode on the exposed portion of the first semiconductor layer,
and forming a second electrode on the transparent conductive oxide
stack structure.
[0013] A manufacturing process of the light-emitting diode device
is disclosed wherein the process including providing a growth
substrate; forming a first type conductivity semiconductor layer on
the substrate; forming an active layer on the first semiconductor
layer; forming a second type conductivity semiconductor layer on
the active layer; forming a reflecting layer on the second
semiconductor layer and adhering a permanent substrate to the
reflecting layer. Then, removing the growth substrate; forming the
transparent conductive oxide stack structure having at least two
resistant interfaces on the first semiconductor layer; forming a
first electrode on the transparent conductive oxide stack structure
and forming a second electrode on the opposite side of the adhering
side of the permanent substrate.
[0014] A manufacturing process of the light-emitting diode device
is disclosed wherein the process including providing a growth
substrate; forming a first type conductivity semiconductor layer on
the substrate; forming an active layer on the first semiconductor
layer; forming a second type conductivity semiconductor layer on
the active layer; forming a transparent conductive oxide stack
structure having at least two resistant interfaces on the second
semiconductor layer; forming a reflecting layer on the transparent
conductive oxide stack structure and adhering a permanent substrate
to the reflecting layer; removing the growth substrate; forming a
first electrode on the first type conductivity semiconductor layer
and forming a second electrode on the opposite side of the adhering
side of the permanent substrate.
[0015] The process like evaporation process is adopted in the
embodiments described above; a transparent conductive oxide stack
structure having at least two resistant interfaces is formed
between the semiconductor stack structure and the electrode of the
light-emitting diode device. It can spread the currents derived
from the electrode to the active layer of the light-emitting diode
device efficiently to solve the issues of current crowding effect
and the overhigh operation voltage of the conventional
light-emitting diode device. The present invention therefore has
the advantages of simpler processes, low operation voltage and
better light efficiency.
BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The accompanying drawings are included to provide easy
understanding of the invention, and are incorporated herein and
constitute a part of this specification. The drawings illustrate
embodiments of the invention and, together with the description,
serve to illustrate the principles of the invention.
[0017] FIG. 1 is a cross-sectional view of conventional
light-emitting diode 100.
[0018] FIGS. 2A-2E are cross-sectional views of the light-emitting
diode device 200 in accordance with the process of a first
embodiment of the present invention.
[0019] FIGS. 3A-3E are cross-sectional views of the light-emitting
diode device 300 in accordance with the process of a second
embodiment of the present invention.
[0020] FIGS. 4A-4E are cross-sectional views of the light-emitting
diode device 400 in accordance with the process of a third
embodiment of the present invention.
[0021] FIGS. 5A-5F are cross-sectional views of the light-emitting
diode device 500 in accordance with the process of a fourth
embodiment of the present invention.
[0022] FIG. 6 is an illustration of the lighting device in
accordance with the embodiment of the present invention.
[0023] FIG. 7A is an illustration of the backlight module in
accordance with the embodiment of the present invention.
[0024] FIG. 7B is an illustration of the backlight module in
accordance with another embodiment of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0025] Reference is made in detail to the preferred embodiments of
the present invention, examples of which are illustrated in the
accompanying drawings. Wherever possible, the same reference
numbers are used in the drawings and the description to refer to
the same or like parts.
[0026] A light-emitting diode (LED) device with simpler processes,
good light efficiency and manufacturing methods thereof is
provided. The current under lower working bias voltage driven from
the electrode of the light-emitting diode device can spread
uniformly to the active layer to greatly increase light
efficiency.
[0027] FIGS. 2A-2E are cross-sectional views of the light-emitting
diode device 200 in accordance with the process of a first
embodiment of the present invention. A growth substrate 201 (shown
in FIG. 2A) such as sapphire, SiC, Si, ZnO, MgO, AlN, GaN or the
combinations thereof is provided.
[0028] An epitaxial stack 205 (shown in FIG. 2B) is formed on the
growth substrate 201 by metal-organic chemical vapor deposition
(MOCVD) process wherein the material of the epitaxial stack 205
contains at least the elements of Ga and N and can be, for example,
AlGaInN, InGaN or GaN.
[0029] In the embodiment, the epitaxial stack 205 including a first
type conductivity semiconductor layer 202, an active layer 203 and
a second type conductivity semiconductor layer 204 disposed on the
growth substrate 201 wherein the first type conductivity
semiconductor layer 202 and the second type conductivity
semiconductor layer 204 have different conductivity types. For
example, the first type conductivity semiconductor layer 202 is an
n-type GaN layer and the second type conductivity semiconductor
layer 204 is a p-type GaN layer. The active layer 203 can be a
multi-quantum well (MQW) structure formed by GaN.
[0030] Referring to FIG. 2C, a portion of the second type
conductivity semiconductor layer 204 and a portion of the active
layer 203 is removed by the removal process like etching process to
expose the first portion 202a of the first type conductivity
semiconductor layer 202. The remaining portion of the second type
conductivity semiconductor layer 204 and the active layer 203 is
formed on the second portion 202b of the first type conductivity
semiconductor layer 202.
[0031] Referring to FIG. 2D, a transparent conductive oxide stack
structure 206 is formed on the remaining portion of the second type
conductivity semiconductor layer 204. In the embodiment, the
materials to form the layers of the transparent conductive oxide
stack structure 206 are the same. The same material can be
materials composing of same elements with different composition
ratios by tuning the deposition parameters of the evaporation
process such as adjusting the concentration of the oxygen in the
evaporation atmosphere so a plurality of the transparent conductive
oxide layers is formed. In the embodiment, the transparent
conductive oxide stack structure 206 formed on the second type
conductivity semiconductor layer 204 is a multilayer stack
structure having at least two resistant interfaces 210 and 211. The
material to form the transparent conductive oxide stack structure
206 can be indium tin oxide (ITO), indium zinc oxide (IZO), cadmium
tin oxide (CTO), zinc oxide (ZnO), indium oxide (In.sub.2O.sub.3),
tin oxide (SnO.sub.2), copper aluminum oxide, aluminum gallium
oxide, aluminum strontium oxide or aluminum zinc oxide (AZO).
[0032] The transparent conductive oxide stack structure 206
includes a first transparent conductive oxide layer 207, a second
transparent conductive oxide layer 208 and a third transparent
conductive oxide layer 209 stacked subsequently on the second type
conductivity semiconductor layer 204 wherein the first transparent
conductive oxide layer 207 having a first resistance, the second
transparent conductive oxide layer 208 having a second resistance,
and the third transparent conductive oxide layer 209 having a third
resistance. The third resistance is smaller than the second
resistance. The second resistance can be larger or smaller than the
first resistance. In this embodiment, the second resistance is
larger than both the first and the third resistance. In another
embodiment, when the second resistance is smaller than the third
resistance, it can be either larger or smaller than the first
resistance. Therefore a first resistant interface 210 is formed
between the first transparent conductive oxide layer 207 and the
second transparent conductive oxide layer 208; a second resistant
interface 211 is formed between the second transparent conductive
oxide layer 208 and the third transparent conductive oxide layer
209.
[0033] Referring to FIG. 2E, a first electrode 212 is disposed on
the exposed first portion 202a of the first type conductivity
semiconductor layer 202. A second electrode 213 is disposed on the
transparent conductive oxide stack structure 206 to form the
light-emitting diode device 200.
[0034] The second electrode 213 can be disposed on the same side of
the first electrode 212 on the growth substrate 201. The first
electrode is made of In, Al, Ti, Au, W, InSn, TiN, WSi, PtIn.sub.2,
Nd/Al, Pd/Al, Ta/Al, Ti/Ag, Ta/Ag, Ti/Al, Ti/Au, Zr/ZrN, Au/Ge/Ni,
Cr/Ni/Au, Ni/Cr/Au, Ti/Pd/Au, Ti/Pt/Au, Ti/Al/Ni/Au, Au/Si/Ti/Au/Si
or Au/Ni/Ti/Si/Ti. The second electrode 213 is made of Ni/Au,
NiO/Au, Pd/Ag/Au/Ti/Au, Pt/Ru, Ti/Pt/Au, Pd/Ni, Ni/Pd/Au, Pt/Ni/Au,
Ru/Au, Nb/Au, Co/Au, Pt/Ni/Au, Ni/Pt, NiIn or Pt.sub.3In.sub.7.
[0035] Because the third transparent conductive oxide layer 209 in
the outer side of the transparent conductive oxide stack structure
206 (away from the active layer 203) has lower resistance and the
second transparent conductive oxide layer 208 has higher
resistance, the current from the second electrode 213 is blocked
from spreading to the epitaxial stack 205 directly, and the lateral
spread distance of the current in the third transparent conductive
oxide layer 209 having lower resistance is then extended. The first
transparent conductive oxide layer 207 in the inner side of the
transparent conductive oxide stack structure 206 (close to the
active layer 203) forms a good ohmic contact with the epitaxial
stack 205 because of its lower resistance, so the operation voltage
of the light-emitting diode device 200 is lowered.
[0036] FIGS. 3A-3E are cross-sectional views of the light-emitting
diode device 300 in accordance with the process of a second
embodiment of the present invention. A growth substrate 301 (shown
in FIG. 3A), such as sapphire, SiC, Si, ZnO, MgO, AlN, GaN, GaP,
GaAs, AlGaAs, GaAsP or the combinations thereof is provided.
[0037] An epitaxial stack 305 (shown in FIG. 3B) is formed on the
growth substrate 301 by metal-organic chemical vapor deposition
(MOCVD) process wherein the material of the epitaxial stack 305
contains at least the elements of Ga and N and can be, for example,
AlGaInN, GaN, AlGaInP, InGaP, AlGaN, InGaN.
[0038] In the embodiment, the epitaxial stack 305 including a first
type conductivity semiconductor layer 302, an active layer 303 and
a second type conductivity semiconductor layer 304 disposed on the
growth substrate 301 subsequently wherein the first type
conductivity semiconductor layer 302 and the second type
conductivity semiconductor layer 304 have different conductivity
types. For example, the first type conductivity semiconductor layer
302 is an n-type GaN layer and the second type conductivity
semiconductor layer 304 is a p-type GaN layer. The active layer 303
can be a multi-quantum well (MQW) structure formed by GaN.
[0039] Referring to FIG. 3C, a reflecting layer 317 is formed on
the second type conductivity semiconductor layer 304. A permanent
substrate 307 with a lower surface 307b is adhered by an adhesion
layer 306 to the reflecting layer 317, wherein the reflecting layer
317 is made of Al, Au, Pt, Zn, Ag, Ni, Ge, In, Sn or the
combinations thereof. The material of the adhesion layer 306 can be
silver epoxy, conductive polymer, Al, Au, Pt, Zn, Ag, Ni, Ge, In,
Sn, Ti, Pb, Cu, Pd, or any conductive material containing the
materials described above. The permanent substrate 307 can be
silicon or metal material.
[0040] Furthermore, prior to forming a reflecting layer 317, a
contact layer 308 is optionally formed on the second type
conductivity semiconductor layer 304. The contact layer 308 is made
of Ag, Al, Au, Pt, Ti, Cr, Ni, Ge, Be, Zn, Mg or the combinations
thereof.
[0041] Referring to FIG. 3D, the growth substrate is removed. A
transparent conductive oxide stack structure 309 having at least
two resistant interfaces 313 and 314 is formed on the first type
conductivity semiconductor layer 302.
[0042] In the embodiment, the materials to form the layers of the
transparent conductive oxide stack structure 309 are the same. The
same material can be materials composing of same elements with
different composition ratios by tuning the deposition parameters of
the evaporation process such as adjusting the concentration of the
oxygen in the evaporation atmosphere so a plurality of the
transparent conductive oxide layers is formed on the first type
conductivity semiconductor layer 302. The transparent conductive
oxide stack structure 309 can be indium tin oxide (ITO), indium
zinc oxide (IZO), cadmium tin oxide (CTO), zinc oxide (ZnO), indium
oxide (In.sub.2O.sub.3), tin oxide (SnO.sub.2), copper aluminum
oxide, aluminum gallium oxide, aluminum strontium oxide or aluminum
zinc oxide (AZO).
[0043] The transparent conductive oxide stack structure 309
includes a first transparent conductive oxide layer 310, a second
transparent conductive oxide layer 311 and a third transparent
conductive oxide layer 312 stacked subsequently on the first type
conductivity semiconductor layer 302 wherein the first transparent
conductive oxide layer 310 having a first resistance, the second
transparent conductive oxide layer 311 having a second resistance,
the third transparent conductive oxide layer 312 having a third
resistance wherein the third resistance is smaller than the first
resistance. The second resistance can be larger or smaller than the
first resistance. In this embodiment, the second resistance is
larger than both the first and the third resistance. In another
embodiment, when the second resistance is smaller than the third
resistance, it can be either larger or smaller than the first
resistance. Therefore a first resistant interface 313 is formed
between the first transparent conductive oxide layer 310 and the
second transparent conductive oxide layer 311; a second resistant
interface 314 is formed between the second transparent conductive
oxide layer 311 and the third transparent conductive oxide layer
312.
[0044] Referring to FIG. 3E, a first electrode 315 is disposed on
the transparent conductive oxide stack structure 309. A second
electrode 316 is formed on the top surface 307a of the permanent
substrate 307 wherein the top surface 307a is disposed on the
opposite side of the lower surface 307b of the permanent substrate
307. A light-emitting diode device 300 is formed accordingly.
[0045] Because the third transparent conductive oxide layer 312 in
the outer side of the transparent conductive oxide stack structure
309 (away from the active layer 303) has lower resistance and the
second transparent conductive oxide layer 311 has higher
resistance, the current from the first electrode 315 is blocked
from spreading to the epitaxial stack 305 directly, and the lateral
spread distance of the current in the third transparent conductive
oxide layer 312 having lower resistance is then extended. The first
transparent conductive oxide layer 310 in the inner side of the
transparent conductive oxide stack structure 309 (close to the
active layer 303) forms a good ohmic contact with the epitaxial
stack 305 because of its lower resistance so the operation voltage
of the light-emitting diode device 300 is lowered.
[0046] FIGS. 4A-4E are cross-sectional views of the light-emitting
diode device 400 in accordance with the process of a third
embodiment of the present invention. A growth substrate 401 (shown
in FIG. 4A) such as sapphire, SiC, Si, ZnO, MgO, AlN, GaN, GaP,
GaAs, AlGaAs, GaAsP or the combinations thereof is provided.
[0047] An epitaxial stack 405 (shown in FIG. 4B) is formed on the
growth substrate 401 by metal-organic chemical vapor deposition
(MOCVD) process, wherein the material of the epitaxial stack 405
contains at least the elements of Ga and N and can be, for example,
AlGaInN, GaN, AlGaInP, InGaP, AlGaN, InGaN.
[0048] In the embodiment, the epitaxial stack 405 including a first
type conductivity semiconductor layer 402, an active layer 403 and
a second type conductivity semiconductor layer 404 disposed on the
growth substrate 401 wherein the first type conductivity
semiconductor layer 402 and the second type conductivity
semiconductor layer 404 have different conductivity types. For
example, the first type conductivity semiconductor layer 402 is an
n-type GaN layer and the second type conductivity semiconductor
layer 404 is a p-type GaN layer. The active layer 403 can be a
multi-quantum well (MQW) structure formed by GaN.
[0049] Referring to FIG. 4C, a transparent conductive oxide stack
structure 416 having at least two resistant interfaces 409 and 410
is formed on the second type conductivity semiconductor layer
404.
[0050] In the embodiment, the materials to form the layers of the
transparent conductive oxide stack structure 416 are the same. The
same material can be materials composing of same elements with
different composition ratios by tuning the deposition parameters of
the evaporation process such as adjusting the concentration of the
oxygen in the evaporation atmosphere so a plurality of the
transparent conductive oxide layers is formed on the second type
conductivity semiconductor layer 404. The material to form the
transparent conductive oxide stack structure 416 can be indium tin
oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (CTO), zinc
oxide (ZnO), indium oxide (In.sub.2O.sub.3), tin oxide (SnO.sub.2),
copper aluminum oxide, aluminum gallium oxide, aluminum strontium
oxide or aluminum zinc oxide (AZO).
[0051] The transparent conductive oxide stack structure 416
includes a first transparent conductive oxide layer 406, a second
transparent conductive oxide layer 407 and a third transparent
conductive oxide layer 408 stacked subsequently on the second type
conductivity semiconductor layer 404 wherein the first transparent
conductive oxide layer 406 having a first resistance, the second
transparent conductive oxide layer 407 having a second resistance,
the third transparent conductive oxide layer 408 having a third
resistance wherein the third resistance is smaller than the second
resistance. The second resistance can be larger or smaller than the
first resistance. In another embodiment, when the second resistance
is smaller than the third resistance, it can be either larger or
smaller than the first resistance. In this embodiment, the second
resistance is larger than both the first and the third resistance.
Therefore a first resistant interface 409 is formed between the
first transparent conductive oxide layer 406 and the second
transparent conductive oxide layer 407; a second resistant
interface 410 is formed between the second transparent conductive
oxide layer 407 and the third transparent conductive oxide layer
408.
[0052] Referring to FIG. 4D, a reflecting layer 411 is formed on
the transparent conductive oxide stack structure 416. A lower
surface 413b of a permanent substrate 413 is adhered by an adhesion
layer 412 to the reflecting layer 411. Wherein the reflecting layer
411 can be Al, Au, Pt, Zn, Ag, Ni, Ge, In, Sn or the combinations
thereof. The adhesion layer 412 can be silver epoxy, conductive
polymer, Al, Au, Pt, Zn, Ag, Ni, Ge, In, Sn, Ti, Pb, Cu, Pd or any
conductive material containing the materials described above. The
permanent substrate 307 can be silicon or metal material.
[0053] Referring to FIG. 4E, the growth substrate 401 is removed. A
first electrode 414 is disposed on the first type conductivity
semiconductor layer 402. A second electrode 415 is formed on the
top surface 413a of the permanent substrate 413 wherein the top
surface 413a is disposed on the opposite side of the lower surface
413b of the permanent substrate 413. A light-emitting diode device
400 is formed accordingly.
[0054] In this embodiment, prior to forming a first electrode 414,
a contact layer 417 is formed on the first type conductivity
semiconductor layer 402 to electrically contact with the first type
conductivity semiconductor layer 402. The contact layer 417 can be
Ag, Al, Au, Pt, Ti, Cr, Ni, Ge, Be, Zn, Mg or the combinations
thereof.
[0055] Because the third transparent conductive oxide layer 408 in
the outer side of the transparent conductive oxide stack structure
416 (away from the active layer 403) has lower resistance and the
second transparent conductive oxide layer 407 has higher
resistance, the current from the second electrode 415 is blocked
from spreading to the epitaxial stack 405 directly, and the lateral
spread distance of the current in the third transparent conductive
oxide layer 408 having lower resistance is then extended. The first
transparent conductive oxide layer 406 in the inner side of the
transparent conductive oxide stack structure 416 (close to the
active layer 403) forms a good ohmic contact with the epitaxial
stack 405 because of its lower resistance, so the operation voltage
of the light-emitting diode device 400 is lowered.
[0056] FIGS. 5A-5E are cross-sectional views of the light-emitting
diode device 500 in accordance with the process of a fourth
embodiment of the present invention. A growth substrate 501 (shown
in FIG. 5A) such as sapphire, SiC, Si, ZnO, MgO, AlN, GaN, GaP,
GaAs, AlGaAs, GaAsP or the combinations thereof is provided.
[0057] An epitaxial stack 505 (shown in FIG. 5B) is formed on the
growth substrate 501 by metal-organic chemical vapor deposition
(MOCVD) process, wherein the material of the epitaxial stack 505
contains at least the elements of Ga and N and can be, for example,
AlGaInN, GaN, AlGaInP, InGaP, AlGaN, InGaN or the combinations
thereof.
[0058] In the embodiment, the epitaxial stack 505 including a first
type conductivity semiconductor layer 502, an active layer 503 and
a second type conductivity semiconductor layer 504 disposed on the
growth substrate 501 wherein the first type conductivity
semiconductor layer 502 and the second type conductivity
semiconductor layer 504 have different conductivity types. For
example, the first type conductivity semiconductor layer 502 is an
n-type GaN layer and the second type conductivity semiconductor
layer 504 is a p-type GaN layer. The active layer 503 can be a
multi-quantum well (MQW) structure formed by GaN.
[0059] Referring to FIG. 5C, a first transparent conductive oxide
stack structure 522 having at least two resistant interfaces 509
and 510 is formed on the second type conductivity semiconductor
layer 504.
[0060] In the embodiment, the materials to form the layers of the
transparent conductive oxide stack structure 522 are the same. The
same material can be materials composing of same elements with
different composition ratios by tuning the deposition parameters of
the evaporation process such as adjusting the concentration of the
oxygen in the evaporation atmosphere so a plurality of the
transparent conductive oxide layers is formed on the second type
conductivity semiconductor layer 504. The material to form the
transparent conductive oxide stack structure 522 can be indium tin
oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (CTO), zinc
oxide (ZnO), indium oxide (In.sub.2O.sub.3), tin oxide (SnO.sub.2),
copper aluminum oxide, aluminum gallium oxide, aluminum strontium
oxide or aluminum zinc oxide (AZO).
[0061] The first transparent conductive oxide stack structure 522
includes a fourth transparent conductive oxide layer 506, a fifth
transparent conductive oxide layer 507 and a sixth transparent
conductive oxide layer 508 stacked subsequently on the second type
conductivity semiconductor layer 504 wherein the fourth transparent
conductive oxide layer 506 having a fourth resistance, the fifth
transparent conductive oxide layer 507 having a fifth resistance,
the sixth transparent conductive oxide layer 508 having a sixth
resistance wherein the fifth resistance is smaller than the sixth
resistance. The fifth resistance can be larger or smaller than the
fourth resistance. In another embodiment, when the fifth resistance
is smaller than the sixth resistance, it can be either larger or
smaller than the fourth resistance. In this embodiment, the fifth
resistance is larger both than the fourth and the sixth resistance.
Therefore a third resistant interface 509 is formed between the
fourth transparent conductive oxide layer 506 and the fifth
transparent conductive oxide layer 507; a fourth resistant
interface 510 is formed between the fifth transparent conductive
oxide layer 507 and the sixth transparent conductive oxide layer
508.
[0062] Referring to FIG. 5D, a reflecting layer 511 is formed on
the first transparent conductive oxide stack structure 522. A lower
surface 513b of a permanent substrate 513 is adhered by an adhesion
layer 512 to the reflecting layer 511. Wherein the reflecting layer
511 can be Al, Au, Pt, Zn, Ag, Ni, Ge, In, Sn or the combinations
thereof. The adhesion layer 512 can be silver epoxy, conductive
polymer, Al, Au, Pt, Zn, Ag, Ni, Ge, In, Sn, Ti, Pb, Cu, Pd or any
conductive material containing the materials described above. The
permanent substrate 513 can be silicon or metal material.
[0063] Referring to FIG. 5E, the growth substrate 501 is removed. A
second transparent conductive oxide stack structure 514 having at
least two resistant interfaces is formed on the first type
conductivity semiconductor layer 502.
[0064] In another embodiment, the materials to form the layers of
the second transparent conductive oxide stack structure 514 are the
same. The same material can be materials composing of same elements
with different composition ratios by tuning the deposition
parameters of the evaporation process such as adjusting the
concentration of the oxygen in the evaporation atmosphere so a
plurality of the transparent conductive oxide layers is formed on
the first type conductivity semiconductor layer 502. The second
transparent conductive oxide stack structure 514 can be indium tin
oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (CTO), zinc
oxide (ZnO), indium oxide (In.sub.2O.sub.3), tin oxide (SnO.sub.2),
copper aluminum oxide, aluminum gallium oxide, aluminum strontium
oxide or aluminum zinc oxide (AZO).
[0065] In this embodiment, the second transparent conductive oxide
stack structure 514 is a stack structure with multilayer having at
least two resistant interfaces.
[0066] In this embodiment, the second transparent conductive oxide
stack structure 514 includes a first transparent conductive oxide
layer 515, a second transparent conductive oxide layer 516 and a
third transparent conductive oxide layer 517 stacked subsequently
on the first type conductivity semiconductor layer 502 wherein the
first transparent conductive oxide layer 515 having a first
resistance, the second transparent conductive oxide layer 516
having a second resistance, the third transparent conductive oxide
layer 517 having a third resistance wherein the second resistance
is larger than the third resistance. The second resistance can be
larger or smaller than the first resistance.
[0067] In other embodiments, the second resistance is smaller than
the third resistance and the second resistance can be larger or
smaller than the first resistance. In this embodiment, the second
resistance is larger than both the first and the third resistance.
But in some embodiments, the second resistance is smaller than the
first resistance. Therefore a first resistant interface 518 is
formed between the first transparent conductive oxide layer 515 and
the second transparent conductive oxide layer 516; a second
resistant interface 519 is formed between the second transparent
conductive oxide layer 516 and the third transparent conductive
oxide layer 517.
[0068] Referring to FIG. 5F, A first electrode is formed on the
second transparent conductive oxide stack structure 514; A second
electrode 521 is formed on the top surface 513a of the permanent
substrate 513 wherein the top surface 513a is disposed on the
opposite side of the lower surface 513b of the permanent substrate
513 to form the light-emitting diode device 500.
[0069] Because the transparent conductive oxide layer in the outer
side of the transparent conductive oxide stack structure (away from
the active layer) has lower resistance and the second transparent
conductive oxide layer 516 and the fifth transparent conductive
oxide layer 507 have higher resistance, the current from the front
side electrode is blocked from spreading to the epitaxial stack 505
directly, and the lateral spread distance of the current in
transparent conductive oxide layer having lower resistance is then
extended. The transparent conductive oxide layer in the inner side
of the transparent conductive oxide stack structure (close to the
active layer) forms a good ohmic contact with the epitaxial stack
505 because of its lower resistance, so the operation voltage of
the light-emitting diode device 500 is lowered.
[0070] The feature of the evaporation process in accordance with
the embodiments described above in the invention, the two
transparent conductive oxide stack structures having at least two
resistant interfaces is formed between the semiconductor stack
structure and the front side electrode of the light-emitting diode
device. It can spread the currents derived from the electrode to
the active layer of the light-emitting diode device efficiently to
solve the issue of current crowding effect and the overhigh
operation voltage of the current blocking layer in the conventional
light-emitting diode device.
[0071] Because of the transparent conductive oxide stack structures
are formed by evaporation process, the light-emitting diode device
in accordance with this invention having the advantages of simpler
processes, low operation voltage and better light efficiency.
[0072] In addition, the light-emitting device described above can
be used as a backlight module in the liquid crystal display or a
lighting device. FIG. 6 is an illustration of the lighting device
600 containing the light-emitting diode device in accordance with
the embodiments of the present invention shown in FIGS. 2E, 3E, 4E
and 5F.
[0073] The lighting device 600 includes a lighting element 601, a
power supplement system 602 and a control element 603, wherein the
lighting element 601 including at least a light-emitting diode
device chosen from the light-emitting diode device 200, 300, 400,
500 or the combinations thereof in FIG. 2E, 3E, 4E or 5F. In this
embodiment, the light source is formed by the light-emitting diode
device 200 and 300.
[0074] The power supplement system 602 electrically connects to the
lighting element 601; the control element 603 such as a switch
electrically connects to the power supplement system 602 or the
lighting element 601 to control the current to the lighting element
601.
[0075] FIGS. 7A and 7B illustrate of the backlight modules
separately containing the light-emitting diode device in accordance
with the embodiments of the present invention shown in FIGS. 2E,
3E, 4E and 5F.
[0076] The backlight module of present invention includes a back
bezel 701, a reflector 702, a light source 703, and an optical film
704. The back bezel 701 is a shell structure including a bottom
side 705 and a light extraction side 706. The reflector 702
disposed between the bottom side 705 and the light extraction side
706. In a preferred embodiment, the reflector 702 is a light
reflecting layer coated on the bottom side 705. A light source 703
is disposed between the reflector 702 and the light extraction side
706 and includes a least a light-emitting diode device 200, 300,
400 or 500 or the combinations thereof showing in FIG. 2E, 3E, 4E
or 5F. The optical film is formed between the light source 703 and
the light extraction side 706. In the embodiment of the embodiment,
the light source is disposed right under the light extraction side
706 and the optical film 704 (referring to the backlight module
700A in FIG. 7A.) Parts of the light provided from the light source
703 is directly passing the optical film 704 for optical processing
and extracting out from the light extraction side 706. In another
embodiment of this invention, the light source 703 of the
light-emitting diode device 200 is disposed on one side of the
inner surface of the back bezel 701 (referring to the backlight
module 700B in FIG. 7B.) The light provided from the light source
703 needs to pass the optical film 704 for optical processing and
extracting out from the light extraction side 706.
[0077] As is understood by a person skilled in the art, the
foregoing preferred embodiments of the present invention are
illustrated of the present invention rather than limiting of the
present invention. It is intended to cover various modifications
and similar arrangements included within the spirit and scope of
the appended claims, the scope of which should be accorded the
broadest interpretation so as to encompass all such modifications
and similar structure. Such as the embodiments of this invention,
the transparent conductive oxide stack structure is a multilayer
stack structure and the three layers structure of the transparent
conductive oxide stack structure is illustrated in the
aforementioned embodiment. But in other embodiments, the
transparent conductive oxide stack structure can contain the
multilayer more than 3 layers. The resistance of each transparent
conductive oxide layer is variable according to the different
optical requirement or design. Therefore, the scope of this
invention is decided by the appended claims.
* * * * *