U.S. patent application number 12/877753 was filed with the patent office on 2011-01-06 for method and apparatus for producing a dislocation-free crystalline sheet.
This patent application is currently assigned to VERIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.. Invention is credited to Frederick Carlson, Peter L. KELLERMAN, Frank Sinclair.
Application Number | 20110003024 12/877753 |
Document ID | / |
Family ID | 41398884 |
Filed Date | 2011-01-06 |
United States Patent
Application |
20110003024 |
Kind Code |
A1 |
KELLERMAN; Peter L. ; et
al. |
January 6, 2011 |
METHOD AND APPARATUS FOR PRODUCING A DISLOCATION-FREE CRYSTALLINE
SHEET
Abstract
A dislocation-free sheet may be formed from a melt. A sheet of
material with a first width is formed on a melt of the material
using a cooling plate. This sheet has dislocations. The sheet is
transported with respect to the cooling plate and the dislocations
migrate to an edge of the sheet. The first width of the sheet is
increased to a second width by the cooling plate. The sheet does
not have dislocations at the second width. The cooling plate may
have a shape with two different widths in one instance. The cooling
plate may have segments that operate at different temperatures to
increase the width of the sheet in another instance. The sheet may
be pulled or flowed with respect to the cooling plate.
Inventors: |
KELLERMAN; Peter L.; (Essex,
MA) ; Sinclair; Frank; (Quincy, MA) ; Carlson;
Frederick; (Potsdam, NY) |
Correspondence
Address: |
VARIAN SEMICONDUCTOR EQUIPMENT ASSC., INC.
35 DORY RD.
GLOUCESTER
MA
01930-2297
US
|
Assignee: |
VERIAN SEMICONDUCTOR EQUIPMENT
ASSOCIATES, INC.
Gloucester
MA
|
Family ID: |
41398884 |
Appl. No.: |
12/877753 |
Filed: |
September 8, 2010 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12478513 |
Jun 4, 2009 |
7816153 |
|
|
12877753 |
|
|
|
|
61059150 |
Jun 5, 2008 |
|
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|
Current U.S.
Class: |
425/224 |
Current CPC
Class: |
C30B 11/003 20130101;
C30B 29/06 20130101; C30B 29/60 20130101; C30B 11/001 20130101;
C30B 28/06 20130101 |
Class at
Publication: |
425/224 |
International
Class: |
B29D 7/01 20060101
B29D007/01 |
Claims
1. An apparatus for forming a sheet comprising: a vessel defining a
channel configured to hold a melt of a material; a cooling plate
above said melt, said cooling plate having a first segment and a
plurality of second segments, said plurality of second segments
configured to independently control temperature compared to said
first segment.
2. The apparatus of claim 1, wherein said melt is configured to
flow from a first point to a second point of said channel.
3. The apparatus of claim 1, wherein said material comprises
silicon or silicon and germanium.
4. The apparatus of claim 1, further comprising a third segment,
said third segment configured to independently control temperature
compared to said first segment.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This is a divisional application of U.S. application Ser.
No. 12/478,513 entitled "Method and Apparatus for Producing a
Dislocation-Free Crystalline Sheet," filed Jun. 4, 2009, which
claims priority to the provisional patent application entitled
"Method and Apparatus for Producing a Dislocation-Free Crystalline
Silicon Sheet," filed Jun. 5, 2008 and assigned U.S. App. No.
61/059,150, the disclosures of which are hereby incorporated by
reference.
FIELD
[0002] This invention relates to sheet formation from a melt and,
more particularly, to dislocation-free sheet formation from a
melt.
BACKGROUND
[0003] Silicon wafers or sheets may be used in, for example, the
integrated circuit or solar cell industry. Demand for solar cells
continues to increase as the demand for renewable energy sources
increases. As these demands increase, one goal of the solar cell
industry is to lower the cost/power ratio. There are two types of
solar cells: silicon and thin film. The majority of solar cells are
made from silicon wafers, such as single crystal silicon wafers.
Currently, a major cost of a crystalline silicon solar cell is the
wafer on which the solar cell is made. The efficiency of the solar
cell, or the amount of power produced under standard illumination,
is limited, in part, by the quality of this wafer. Any reduction in
the cost of manufacturing a wafer without decreasing quality will
lower the cost/power ratio and enable the wider availability of
this clean energy technology.
[0004] The highest efficiency silicon solar cells may have an
efficiency of greater than 20%. These are made using
electronics-grade monocrystalline silicon wafers. Such wafers may
be made by sawing thin slices from a monocrystalline silicon
cylindrical boule grown using the Czochralski method. These slices
may be less than 200 .mu.m thick. To maintain single crystal
growth, the boule must be grown slowly, such as less than 10
.mu.m/s, from a crucible containing a melt. The subsequent sawing
process leads to approximately 200 .mu.m of kerf loss, or loss due
to the width of a saw blade, per wafer. The cylindrical boule or
wafer also may need to be squared off to make a square solar cell.
Both the squaring and kerf losses lead to material waste and
increased material costs. As solar cells become thinner, the
percent of silicon waste per cut increases. Limits to ingot slicing
technology, however, may hinder the ability to obtain thinner solar
cells.
[0005] Other solar cells are made using wafers sawed from
polycrystalline silicon ingots. Polycrystalline silicon ingots may
be grown faster than monocrystalline silicon. However, the quality
of the resulting wafers is lower because there are more defects and
grain boundaries and this lower quality results in lower efficiency
solar cells. The sawing process for a polycrystalline silicon ingot
is as inefficient as a monocrystalline silicon ingot or boule.
[0006] Another solution that may reduce silicon waste is cleaving a
wafer from a silicon ingot after ion implantation. For example,
hydrogen, helium, or other noble gas ions are implanted beneath the
surface of the silicon ingot to form an implanted region. This is
followed by a thermal, physical, or chemical treatment to cleave
the wafer from the ingot along this implanted region. While
cleaving through ion implantation can produce wafers without kerf
losses, it has yet to be proven that this method can be employed to
produce silicon wafers economically.
[0007] Yet another solution is to pull a thin ribbon of silicon
vertically from a melt and then allow the pulled silicon to cool
and solidify into a sheet. The pull rate of this method may be
limited to less than approximately 18 mm/minute. The removed latent
heat during cooling and solidifying of the silicon must be removed
along the vertical ribbon. This results in a large temperature
gradient along the ribbon. This temperature gradient stresses the
crystalline silicon ribbon and may result in poor quality
multi-grain silicon. The width and thickness of the ribbon also may
be limited due to this temperature gradient. For example, the width
may be limited to less than 80 mm and the thickness may be limited
to 180 .mu.m.
[0008] Horizontal ribbons of silicon that are physically pulled
from a melt also have been tested. In one method, a seed attached
to a rod is inserted into the melt and the rod and resulting sheet
are pulled at a low angle over the edge of the crucible. The angle
and surface tension are balanced to prevent the melt from spilling
over the crucible. It is difficult, however, to initiate and
control such a pulling process. Access must be given to the
crucible and melt to insert the seed, which may result in heat
loss. Additional heat may be added to the crucible to compensate
for this heat loss. This may cause vertical temperature gradients
in the melt that may cause non-laminar fluid flow. Also, a possibly
difficult angle of inclination adjustment to balance gravity and
surface tension of the meniscus formed at the crucible edge must be
performed. Furthermore, since heat is being removed at the
separation point of the sheet and melt, there is a sudden change
between heat being removed as latent heat and heat being removed as
sensible heat. This may cause a large temperature gradient along
the ribbon at this separation point and may cause dislocations in
the crystal. Dislocations and warping may occur due to these
temperature gradients along the sheet.
[0009] Production of thin sheets separated horizontally from a melt
has not been performed. Producing sheets horizontally from a melt
by separation may be less expensive than silicon sliced from an
ingot and may eliminate kerf loss or loss due to squaring. Sheets
produced horizontally from a melt by separation also may be less
expensive than silicon cleaved from an ingot using hydrogen ions or
other pulled silicon ribbon methods. Furthermore, separating a
sheet horizontally from a melt may improve the crystal quality of
the sheet compared to pulled ribbons. A crystal growth method such
as this that can reduce material costs would be a major enabling
step to reduce the cost of silicon solar cells. Yet some data have
indicated that these horizontally-produced sheets may still have
dislocations in the crystal lattice. Accordingly, there is a need
in the art for an improved apparatus and method to produce a
dislocation-free sheet from a melt.
SUMMARY
[0010] According to a first aspect of the invention, a method of
forming a sheet from a melt is provided. The method comprises
forming a sheet of a material having a first width on a melt of the
material using a cooling plate. The sheet has dislocations. The
sheet is transported with respect to the cooling plate whereby the
dislocations migrate to an edge of the sheet. The sheet is
increased to a second width as the sheet is transported with
respect to the cooling plate by changing a parameter of the cooling
plate. The second width is larger than the first width and the
sheet does not have the dislocations at the second width.
[0011] According to a second aspect of the invention, an apparatus
for forming a sheet is provided. The apparatus comprises a vessel
defining a channel configured to hold a melt of a material. A
cooling plate is above the melt having a first section and a second
section. The first section has a first width. The second section
has a second width larger than the first width.
[0012] According to a third aspect of the invention, an apparatus
for forming a sheet is provided. The apparatus comprises a vessel
defining a channel configured to hold a melt of a material. A
cooling plate is above the melt. The cooling plate has a first
segment and a plurality of second segments. The plurality of second
segments is configured to independently control temperature
compared to the first segment.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] For a better understanding of the present disclosure,
reference is made to the accompanying drawings, which are
incorporated herein by reference and in which:
[0014] FIG. 1 is a cross-sectional side view of an embodiment of an
apparatus that separates a sheet from a melt;
[0015] FIG. 2 is a cross-sectional side view of an embodiment of an
apparatus that pulls a sheet from a melt;
[0016] FIG. 3 is a cross-sectional front view of an embodiment of
radiative cooling;
[0017] FIGS. 4A-4E are a top plan view of a first embodiment of
thread initialization;
[0018] FIG. 5 is a top plan view of a first embodiment of a cooling
plate;
[0019] FIG. 6 is a top plan view of a second embodiment of a
cooling plate;
[0020] FIG. 7 is a side cross-sectional view of a third embodiment
of a cooling plate;
[0021] FIG. 8 is a perspective view of a fourth embodiment of a
cooling plate;
[0022] FIG. 9 is a front cross-sectional view of a fifth embodiment
of a cooling plate;
[0023] FIG. 10 is a top cross-sectional view of the fifth
embodiment of a cooling plate;
[0024] FIG. 11 is a perspective view of the fifth embodiment of a
cooling plate;
[0025] FIG. 12 is a front cross-sectional view of pressure control
for a cooling plate; and
[0026] FIG. 13 is a front cross-sectional view of heater balance
for a cooling plate.
DETAILED DESCRIPTION
[0027] The embodiments of the apparatus and methods herein are
described in connection with solar cells. However, these also may
be used to produce, for example, integrated circuits, flat panels,
or other substrates known to those skilled in the art. Furthermore,
while the melt is described herein as being silicon, the melt may
contain germanium, silicon and germanium, or other materials known
to those skilled in the art. Thus, the invention is not limited to
the specific embodiments described below.
[0028] FIG. 1 is a cross-sectional side view of an embodiment of an
apparatus that separates a sheet from a melt. The sheet-forming
apparatus 21 has a vessel 16 and panels 15 and 20. The vessel 16
and panels 15 and 20 may be, for example, tungsten, boron nitride,
aluminum nitride, molybdenum, graphite, silicon carbide, or quartz.
The vessel 16 is configured to contain a melt 10. The melt 10 may
be silicon. The melt 10 may be replenished through the feed 11 in
one embodiment. The feed 11 may contain solid silicon or solid
silicon and germanium. The melt 10 may be pumped into the vessel 16
in another embodiment. A sheet 13 will be formed on the melt 10. In
one instance, the sheet 13 will at least partly float within the
melt 10. While the sheet 13 is illustrated in FIG. 1 as floating in
the melt 10, the sheet 13 may be at least partially submerged in
the melt 10 or may float on top of the melt 10. In one instance,
only 10% of the sheet 13 protrudes from above the top of the melt
10. The melt 10 may circulate within the apparatus 21.
[0029] This vessel 16 defines at least one channel 17. This channel
17 is configured to hold the melt 10 and the melt 10 flows from a
first point 18 to a second point 19 of the channel 17. In one
instance, the environment within the channel 17 is still to prevent
ripples in the melt 10. The melt 10 may flow due to, for example, a
pressure difference, gravity, a magnetohydrodynamic drive, a screw
pump, and impeller pump, a wheel, or other methods of transport.
The melt 10 then flows over the spillway 12. This spillway 12 may
be a ramp, a weir, a small dam, or a corner and is not limited to
the embodiment illustrated in FIG. 1. The spillway 12 may be any
shape that allows a sheet 13 to be separated from the melt 10.
[0030] The panel 15 is configured in this particular embodiment to
extend in part below the surface of the melt 10. This may prevent
waves or ripples from disturbing the sheet 13 as it forms on the
melt 10. These waves or ripples may form due to addition of melt
material from the feed 11, pumping, or other causes known to those
skilled in the art.
[0031] In one particular embodiment, the vessel 16 and panels 15
and 20 may be maintained at a temperature slightly above
approximately 1687 K. For silicon, 1687 K represents the freezing
temperature or interface temperature. By maintaining the
temperature of the vessel 16 and panels 15 and 20 to slightly above
the freezing temperature of the melt 10, the cooling plate 14 may
function using radiation cooling to obtain the desired freezing
rate of the sheet 13 on or in the melt 10. The cooling plate 14 in
this particular embodiment is composed of a single segment or
section but may include multiple segments or sections in another
embodiment. The bottom of the channel 17 may be heated above the
melting temperature of the melt 10 to create a small vertical
temperature gradient in the melt 10 at the interface to prevent
constitutional supercooling or the formation of dendrites, or
branching projections, on the sheet 13. However, the vessel 16 and
panels 15 and 20 may be any temperature above the melting
temperature of the melt 10. This prevents the melt 10 from
solidifying on the vessel 16 and panels 15 and 20.
[0032] The apparatus 21 may be maintained at a temperature slightly
above the freezing temperature of the melt 10 by at least partially
or totally enclosing the apparatus 21 within an enclosure. If the
enclosure maintains the apparatus 21 at a temperature above the
freezing temperature of the melt 10, the need to heat the apparatus
21 may be avoided or reduced and heaters in or around the enclosure
may compensate for any heat loss. This enclosure may be isothermal
with non-isotropic conductivity. In another particular embodiment,
the heaters are not disposed on or in the enclosure and are rather
in the apparatus 21. In one instance, different regions of the
vessel 16 may be heated to different temperatures by imbedding
heaters within the vessel 16 and using multi-zone temperature
control.
[0033] The enclosure may control the environment where the
apparatus 21 is disposed. In a specific embodiment, the enclosure
contains an inert gas. This inert gas may be maintained at above
the freezing temperature of the melt 10. The inert gas may reduce
the addition of solutes into the melt 10 that may cause
constitutional instabilities during the sheet 13 formation
process.
[0034] The apparatus 21 includes a cooling plate 14. The cooling
plate 14 allows heat extraction as the sheet 13 forms on the melt
10. The cooling plate 14 may cause the sheet 13 to freeze on or in
the melt 10 when the temperature of the cooling plate 14 is lowered
below the freezing temperature of the melt 10. This cooling plate
14 may use radiation cooling and may be fabricated of, for example,
graphite, quartz, or silicon carbide. The cooling plate 14 may
remove heat from the liquid melt 10 quickly, uniformly, and in
controlled amounts. Disturbances to the melt 10 may be reduced
while the sheet 13 forms to prevent imperfections in the sheet
13.
[0035] The heat extraction of the heat of fusion and heat from the
melt 10 over the surface of the melt 10 may enable faster
production of the sheet 13 compared to other ribbon pulling methods
while maintaining a sheet 13 with low defect density. Cooling a
sheet 13 on the surface of the melt 10 or a sheet 13 that floats on
the melt 10 allows the latent heat of fusion to be removed slowly
and over a large area while having a large horizontal flow
rate.
[0036] The dimensions of the cooling plate 14 may be increased,
both in length and width. Increasing the length may allow a faster
melt 10 flow rate for the same vertical growth rate and resulting
sheet 13 thickness. Increasing the width of the cooling plate 14
may result in a wider sheet 13. Unlike the vertical sheet pulling
method, there is no inherent physical limitation on the width of
the sheet 13 produced using embodiments of the apparatus and method
described in FIG. 1.
[0037] In one particular example, the melt 10 and sheet 13 flow at
a rate of approximately 1 cm/s. The cooling plate 14 is
approximately 20 cm in length and approximately 25 cm in width. A
sheet 13 may be grown to approximately 100 .mu.m in thickness in
approximately 20 seconds. Thus, the sheet may grow in thickness at
a rate of approximately 5 .mu.m/s. A sheet 13 of approximately 100
.mu.m in thickness may be produced at a rate of approximately 10
m.sup.2/hour.
[0038] Thermal gradients in the melt 10 may be minimized in one
embodiment. This may allow the melt 10 flow to be steady and
laminar. It also may allow the sheet 13 to be formed via radiation
cooling using the cooling plate 14. A temperature difference of
approximately 300 K between the cooling plate 14 and the melt 10
may form the sheet 13 on or in the melt 10 at a rate of
approximately 7 .mu.m/s in one particular instance.
[0039] The region of the channel 17 downstream from the cooling
plate 14 and the under the panel 20 may be isothermal. This
isothermal region may allow annealing of the sheet 13.
[0040] After the sheet 13 is formed on the melt 10, the sheet 13 is
separated from the melt 10 using the spillway 12. The melt 10 flows
from the first point 18 to the second point 19 of the channel 17.
The sheet 13 will flow with the melt 10. This transport of the
sheet 13 may be a continuous motion. In one instance, the sheet 13
may flow at approximately the same speed that the melt 10 flows.
Thus, the sheet 13 may form and be transported while at rest with
respect to the melt 10. The shape of the spillway 12 or orientation
of the spillway 12 may be altered to change the velocity profile of
the melt 10 or sheet 13.
[0041] The melt 10 is separated from the sheet 13 at the spillway
12. In one embodiment, the flow of the melt 10 transports the melt
10 over the spillway 12 and may, at least in part, transport the
sheet 13 over the spillway 12. This may minimize or prevent
breaking the crystal in the sheet 13 because no external stress is
applied to the sheet 13. The melt 10 will flow over the spillway 12
away from the sheet 13 in this particular embodiment. Cooling may
not be applied at the spillway 12 to prevent thermal shock to the
sheet 13. In one embodiment, the separation at the spillway 12
occurs in near-isothermal conditions.
[0042] The sheet 13 may be formed faster in the apparatus 21 than
by being pulled normal to the melt because the melt 10 may flow at
a speed configured to allow for proper cooling and crystallization
of the sheet 13 on the melt 10. The sheet 13 will flow
approximately as fast as the melt 10 flows. This reduces stress on
the sheet 13. Pulling a ribbon normal to a melt is limited in speed
because of the stresses placed on the ribbon due to the pulling.
The sheet 13 in the apparatus 21 may lack any such pulling stresses
in one embodiment. This may increase the quality of the sheet 13
and the production speed of the sheet 13.
[0043] The sheet 13 may tend to go straight beyond the spillway 12
in one embodiment. This sheet 13 may be supported after going over
the spillway 12 in some instances to prevent breakage. A support
device 22 is configured to support the sheet 13. The support device
22 may provide a gas pressure differential to support the sheet 13
using, for example, a gas or air blower. After the sheet 13 is
separated from the melt 10, the temperature of the environment
where the sheet 13 is located may slowly be changed. In one
instance, the temperature is lowered as the sheet 13 moves farther
from the spillway 12.
[0044] In one instance, the growth of the sheet 13, annealing of
the sheet 13, and separation of the sheet 13 from the melt 10 using
the spillway 12 may take place in an isothermal environment. The
separation using the spillway 12 and the approximately equal flow
rates of the sheet 13 and melt 10 minimize stress or mechanical
strain on the sheet 13. This increases the possibility of producing
a single crystal sheet 13.
[0045] In another embodiment, a magnetic field is applied to the
melt 10 and sheet 13 in the apparatus 21. This may dampen
oscillatory flows within the melt 10 and may improve
crystallization of the sheet 13.
[0046] FIG. 2 is a cross-sectional side view of an embodiment of an
apparatus that pulls a sheet from a melt. In this embodiment, the
apparatus 23 pulls the sheet 13 from the melt 10. The melt 10 may
not be circulating in a channel 17 in this embodiment and the sheet
13 may be pulled using a seed. A sheet 13 may be formed through
cooling by the cooling plate 14 and the resulting sheet may be
drawn out of the melt 10.
[0047] Both the embodiments of FIGS. 1-2 use a cooling plate 14.
Different cooling temperatures across the length of the cooling
plate 14, different flow rates of the melt 10 or pull speeds of the
sheet 13, the length of the various sections of the apparatus 21 or
apparatus 23, or the timing within the apparatus 21 or apparatus 23
may be used for process control. If the melt 10 is silicon, a
polycrystalline sheet 13 or single crystal sheet 13 may be formed
in the apparatus 21. In either the embodiment of FIG. 1 or FIG. 2,
the apparatus 21 or apparatus 23 may be contained in an
enclosure.
[0048] FIG. 1 and FIG. 2 are only two examples of apparatuses that
can form sheets 13 in a melt 10. Other apparatuses or methods of
horizontal sheet 13 growth are possible. The embodiments of the
methods and apparatuses described herein may be applied to any
horizontal sheet 13 growth method or apparatus and are not limited
solely to the specific embodiments of FIGS. 1-2.
[0049] The horizontal sheet 13 may include dislocations in the
crystal of the sheet 13. When the sheet 13 is initiated, boundaries
between grains form. These dislocations may be a crystallographic
defect or irregularity within the crystal structure of the sheet 13
or a lattice mismatch within the sheet 13. Such dislocations are
formed in part from the thermal shock caused by the difference in
temperature between the sheet 13 and the melt 10. The dislocations
will propagate throughout the sheet 13 unless eliminated. To
eliminate these dislocations, the dislocations will be allowed to
migrate to the edges of the sheet 13. The embodiments described
herein may be used to allow formation of single crystal silicon
sheets or polycrystalline silicon sheets with increased crystal
size that do not have dislocations.
[0050] FIG. 3 is a cross-sectional front view of an embodiment of
radiative cooling. In FIG. 3, the arrows going from the melt 10 to
the sheet 13, the melt 10, to the cooling plate 14, and the sheet
13 to the cooling plate 14 represent heat transfer. For radiation
at the silicon melting temperature, which is approximately 1700 K,
the emissivity of solid silicon (.epsilon..sub.solid) is
approximately three times the emissivity of liquid silicon
(.epsilon..sub.liquid). In this particular embodiment, a cooling
plate 14 at a temperature below the freezing temperature of the
melt 10 is disposed above the melt 10. In one example, the cooling
plate 14 is approximately 10 K below freezing temperature of the
melt 10, though other temperature differences are possible. Once a
region of the melt 10 begins to crystallize into a sheet 13, the
latent heat, or heat liberated during a change of phase at a
constant temperature and pressure, will be removed through the
solid crystal in the sheet 13 rather than from the liquid melt 10.
The crystal in the sheet 13 will, thus, grow stably in the melt 10
because the liquid in the melt 10 will not become super-cooled via
direct radiative heat transfer to the cooling plate 14.
[0051] In one particular embodiment, convective heat transfer to
the cooling plate 14 is avoided. Convective heat transfer may be
less efficient than radiative cooling in the atmosphere around the
melt 10 and sheet 13. Convective heat transfer may cause waves in
the melt 10, and may be difficult to accurately control. In other
embodiments, however, convective heat transfer may be used by
itself or to supplement radiative heat transfer.
[0052] FIG. 4 is a top plan view of a first embodiment of thread
initialization. FIG. 4 illustrates a process over time from A to E.
Thus, the sheet 13 only passes under the cooling plate 14
illustrated in FIGS. 4A-4E once and the cooling plate is only as
large as illustrated at the various stages A-E. While the width of
the sheet 13 may vary over time, the embodiments disclosed herein
may produce a sheet 13 of uniform thickness.
[0053] The dislocations 41 may need to be removed prior to
steady-state production of the sheet 13. This may begin by using a
"necked-down" sheet 13 or a thread 40 of silicon at the beginning
of the sheet 13. The thread 40 may be floating on the surface of
the melt 10 in this embodiment, as seen in FIG. 3. The thread 40 is
transported with respect to the cooling plate 14. This transport
may involve pulling the thread 40 or flowing the thread 40 within
or with the melt 10. By controlling the size and temperature of the
cooling plate 14 and the flow or pull rate of the thread 40, the
cross-sectional shape and length of the thread 40 can be configured
to allow removal of dislocations 41. By allowing the cooling plate
14 to expand or increase in width or area or the cold region of the
cooling plate 14 to expand or increase in width or area and
controlling the flow or pull rate of the thread 40, the thread 40
can be expanded to form the sheet 13 of the desired width and
thickness.
[0054] In FIG. 4A, the initial thread 40 of the sheet 13 in a melt
10 may have dislocations 41. The cooling plate 14, which has a
curved edge in this embodiment, has a first width 43 that
corresponds to the first width 42 of the thread 40. As the thread
40 flows or is pulled past the cooling plate 14, the dislocations
41 move outward in the thread 40. The dislocations 41 may migrate
toward the edge of the thread 40 at least in part due to the shape
of the cooling plate 14 in this particular embodiment. The
dislocation-free thread 40 occurs prior to the end of FIG. 4B in
this embodiment.
[0055] In FIG. 4C, the region of the cooling plate 14 below the
freezing temperature of the melt 10 begins increasing in dimension.
The width 44 is larger than the first width 43. The sheet 13
likewise expands in width past the initial first width 42 of the
thread 40. This sheet 13 may be, in one instance, single crystal.
In FIG. 4D, the region of the cooling plate 14 below the freezing
temperature of the melt 10 continues to increase in dimension while
the sheet 13 flows or is pulled with respect to the cooling plate
14.
[0056] In FIG. 4E, the region of the cooling plate 14 below the
freezing temperature of the melt 10 reaches its second width 45.
The sheet 13 likewise has a corresponding second width 46. The
second width 45 is larger than the first width 43 of the cooling
plate 14 and the second width 46 of the sheet 13 is larger than the
first width 42 of the thread 40. The dislocation-free thread 40 has
been grown to be a dislocation-free sheet 13. The sheet may be at
steady-state with regard to its width in FIG. 4E. The thread 40 or
end of the sheet 13 may need to be discarded because it contains
dislocations 41.
[0057] In another embodiment, the process illustrated in FIGS.
4A-4E includes an extra step. The thread 40 may be further "necked
down," or otherwise reduced to an even smaller width from the first
width 42, prior to being increased to the second width 46 of the
sheet 13. This may allow faster removal of the dislocations 41
because the dislocations will have less distance to travel to the
edge of the thread 40.
[0058] While the cooling plate 14 of FIGS. 4A-4E is illustrated
with a curved edge, the cooling plate 14 may be straight or other
shapes known to those skilled in the art. This
thread-initialization of FIGS. 4A-4E may be accomplished in
multiple ways. Five embodiments are illustrated in FIGS. 5-11,
though other implementations are possible. These embodiments use a
portion of the cooling plate 14 to initially freeze a thread 40.
The region of the cooling plate 14 below the freezing temperature
of the melt 10 may expand in time to be wider and then freeze a
sheet 13 of desired width. This expansion of the region of the
cooling plate 14 below the freezing temperature of the melt 10 is
timed to allow the dislocations 41 to migrate out of the thread 40
before expansion to a sheet 13 occurs. These embodiments also may
generate a defect and dislocation-free sheet 13 of approximately
constant thickness with an approximately rectangular cross-section.
While the embodiments of the cooling plates 14 in FIGS. 5-11 have
straight edges, the cooling plates 14 may have curved edges or
other shapes known to those skilled in the art.
[0059] FIG. 5 is a top plan view of a first embodiment of a cooling
plate. In this embodiment, the sheet 13 and thread 40 are shown
under the cooling plate 14 by the dotted line. While the dotted
line is shown offset from the outline of the cooling plate 14, the
formation of the sheet 13 and thread 40 may be approximately equal
to the outline of the cooling plate 14. The thread 40 and sheet 13
flow or are pulled in the direction 50. The cooling plate 14 in
this embodiment has a first section 51 and a second section 52. The
width 53 of the first section 51 is less than the width 54 of the
second section 52. The first section 51 is used to form the thread
40. The second section 52 is used to form the dislocation-free
sheet 13. The first section 51 and second section 52 may operate at
different temperatures or be activated at different times. Thus,
the first section 51 and second section 52 may be two segments in
the cooling plate 14 in one embodiment. As the thread 40 or sheet
13 is transported with respect to the cooling plate 14, the
temperature of the first section 51 is below the freezing
temperature of the melt 10 (as seen in FIG. 3), causing a thread 40
to form having width 53. After dislocations migrate out to the
edges of the thread 40, the temperature of the second section 52 is
lowered below the freezing temperature of the melt 10 and the width
of the thread 40 expands to the width 54 of the second section 52.
This will form a sheet 13 with a width 54. The sheet 13 may have a
uniform thickness and width after removal of any dislocations in
this embodiment.
[0060] In one particular embodiment, the cooling plate 14 of FIG. 5
includes different regions besides the first section 51 and second
section 52. These regions are at different temperatures. For
example, a region down the center of the cooling plate 14 including
the first section 51 may operate at a different temperature than
the remaining edges of the cooling plate 14. This center region of
the cooling plate 14 may operate at a slightly higher temperature
than the edges. This will enable equal growth of the sheet 13 and a
sheet 13 to exit from under the cooling plate 14 at an
approximately equal thickness because the sheet 13 will spend more
time under this center region than the remaining edges.
[0061] FIG. 6 is a top plan view of a second embodiment of a
cooling plate. The cooling plate 14 in this particular embodiment
defines an indentation 60. This indentation 60 may ensure uniform
thickness of the sheet 13. Because the thickness of the sheet 13 is
governed by the time and heat transfer rate while under the cooling
plate 14 if the cooling plate 14 operates at an even temperature in
all regions, the indentation 60 reduces the amount of time the
sheet 13 spends under the second section 52 to compensate for the
time the thread 40 spends under the first section 51. This
equalizes total heat removal from all parts or regions of said
sheet 13.
[0062] FIG. 7 is a side cross-sectional view of a third embodiment
of a cooling plate. The cooling plate 14 in FIG. 7 may correspond
with the cooling plates 14 of FIGS. 5-6. The cooling plate 14 of
FIG. 7 includes a high thermal diffusivity layer 70 and a low
thermal diffusivity layer 71. The high thermal diffusivity layer 70
and low thermal diffusivity layer 71 are composed of materials with
different thermal diffusivities. The high thermal diffusivity layer
70 and low thermal diffusivity layer 71 vary in thickness and may
control the temperature profile and radiation cooling of the melt
10 over time. The high thermal diffusivity layer 70 may be disposed
on a cold surface 72. If the top surface of the cooling plate 14 is
lowered to below the freezing temperature of the melt 10 by the
cold surface 72, the transient effect of the different regions of
thermal diffusivity causes the first section 51 to become cold
before the second section 52. Thus, the first section 51 is lowered
in temperature, the thread 40 is formed, the second section 52 is
lowered in temperature, and the sheet 13 is formed. This enables
the thread 40 creation, removal of any dislocations, and expansion
to a sheet 13. Anisotropy of the layers 70, 71 of the cooling plate
14 may be configured to enhance cooling in one embodiment. The cold
surface 72 may be activated to operate below the melting
temperature of the melt 10 through fluid flow, gas conduction,
coolant, or other methods known to those skilled in the art. Other
shapes or configurations of the high thermal diffusivity layer 70
and low thermal diffusivity layer 71 than illustrated in FIG. 7 are
possible.
[0063] FIG. 8 is a perspective view of a fourth embodiment of a
cooling plate. This cooling plate 14 includes a first section 51,
second section 52, and defines an indentation 60. This cooling
plate 14 also has a high thermal diffusivity layer 70 and a low
thermal diffusivity layer 71. The thickness of each layer 70, 71
may vary in the width and length directions.
[0064] In another embodiment, the edges of the cooling plate 14 in
FIGS. 5-8 are heated to provide control of the shape of the thread
40 or sheet 13 at these edges. In yet another embodiment, the
pressure may be different in the regions surrounding different
areas of the cooling plate 14. This pressure difference affects
advection and conduction within a gas and its thermal
resistance.
[0065] FIG. 9 is a front cross-sectional view of a fifth embodiment
of a cooling plate. The cooling plate 14 has a first segment 80 and
two second segments 81. While two second segments 81 are
illustrated, more or fewer second segments 81 are possible and this
embodiment is not limited solely to two second segments 81. The
second segments 81 are not rectangles in this embodiment, but may
be rectangular or other shapes. The bottom surface 82 of the first
segment 80 has a first width 84. The first segment 80 is configured
to operate at a first temperature. This first temperature is below
the freezing temperature of the melt 10. The second segments 81 are
configured to operate at a temperature independently of the first
segment 80. The second segments 81 each have a bottom surface 83.
Both the first segment 80 and second segments 81 may be activated
in one instance.
[0066] In a first phase, the first segment 80 operates at a
temperature below the freezing temperature of the melt 10. This
forms a thread 40 of the first width 84 in the melt 10, as
illustrated in FIG. 10. The thread 40 may be pulled or flowed with
respect to the first segment 80. While the thread 40 is forming,
the second segments 81 operate at a temperature above the freezing
temperature of the melt 10 to allow a single crystal thread 40 or
seed to be formed. In one specific embodiment, the second segments
81 are not yet activated when these are above the freezing
temperature of the melt 10. In another specific embodiment, the
second segments 81 are activated, but operate at a temperature
above the melting temperature of the melt 10.
[0067] In a second phase, the second segments 81 operate at a lower
temperature than in the first phase. In one particular embodiment,
the second segments 81 operate at approximately the same
temperature as the first segment 80. This temperature may be below
the melting temperature of the melt 10. This will present a cooling
plate 14 with an operational width 85. The operational width 85 is
the width of the bottom surfaces 82, 83. Thus, the sheet 13 will be
formed with a width approximately equal to the operational width
85.
[0068] In one embodiment, the segments 80, 81 may both operate at
one temperature but the second segments 81 include heaters to
independently vary the temperature of the second segments 81. In
another instance, fluid flow to the segments 80, 81 may be
individually modified to change the temperature of each.
[0069] FIG. 10 is a top cross-sectional view of the fifth
embodiment of a cooling plate. In FIG. 10, the first phase is
illustrated. The second segments 81 are operating at a temperature
higher than the first segment 80. The first segment 80 is operating
at a temperature below the freezing temperature of the melt 10
while the second segments 81 are above the freezing temperature of
the melt 10. This forms the thread 40 that is illustrated by the
dotted line. The size and thickness of each segment 80, 81 may vary
in the width and length directions. In the second phase, the second
segments 81 operate at approximately the same temperature as the
first segment 80 and the width of the thread 40 will increase.
[0070] FIG. 11 is a perspective view of the fifth embodiment of a
cooling plate. The first segment 80 and second segments 81 are
disposed in front of a third segment 86 in this particular
embodiment. The third segment 86 may operate at the same
temperature as the first segment 80. The third segment 86 may be
activated and operate similar to the second segments 81 in one
embodiment. Radiation shields may be located around the segments
80, 81, 86 or around the cooling plate 14 in one particular
embodiment.
[0071] In one embodiment, the segments 80, 81, 86 may all operate
at one temperature but the segments 81, 86 include heaters to
independently vary the temperature of these segments 81, 86. In
another instance, fluid flow to the segments 80, 81, 86 may be
individually modified to change the temperature of each.
[0072] FIG. 12 is a front cross-sectional view of pressure control
for a cooling plate. The embodiments of FIGS. 5-11 may use pressure
control to control heat flux from the cooling plate 14 to the cold
surroundings. In FIG. 12, the arrows going from the sheet 13 to the
cooling plate 14 and out of the cooling plate 14 represent heat
transfer. To control the heat flux using pressure, a radiation
shield assembly 120 may be placed around the cooling plate 14 on,
for example, the surfaces of the cooling plate 14 not facing the
melt 10. Each radiation shield assembly 120 illustrated in FIG. 12
may contain multiple individual shields separated from one another.
Heat transfer between the shields is radiative and conductive. A
gas conduction element may be configured so that gas conduction
remains in the molecular-free regime such that the rate of heat
transfer by conduction is proportional to pressure. This enables a
range of heat transfer that allows control of a power density from,
for example, less than 1 kW/m.sup.2 to greater than 10 kW/m.sup.2.
Power densities outside this particular range also are possible.
Maintaining the gas in the molecular-free regime is accomplished by
changing gas pressure and inserting a sufficient number of shields
in the radiation shield assembly 120 so as to keep the gap between
shields less than the mean-free path of the gas molecules. The
effective resistance of the radiation shield assembly 120 also may
allow heat flow. The effective resistance of the radiation shield
assembly 120 also may be used to control heat transfer by varying
the number of shields within the radiation shield assembly 120. For
example, 50 shields may be stacked with approximately 1.5 .mu.m
gaps and the pressure may be varied between approximately 1 and 20
Torr.
[0073] FIG. 13 is a front cross-sectional view of heater balance
for a cooling plate. The embodiments of FIGS. 5-11 may use heater
balance to control heat flux from the cooling plate 14 to the
surroundings. In FIG. 13, the arrows going from the sheet 13 to the
cooling plate 14 and out of the cooling plate 14 represent heat
transfer. Heater balance may compensate for a steady energy loss
through an insulator using an additional heater 121. Radiation
shield assemblies 120 are disposed around the cooling plate 14 in
this particular embodiment. Each radiation shield assembly 120
illustrated in FIG. 13 may contain multiple individual shields
separated from one another. In this embodiment, heat transfer is by
radiation and conduction in the absence of fluid motion. Conduction
resistance can be controlled by gas pressure. Radiation resistance
can be controlled by number of shields in the radiation shield
assemblies 120 and the respective emissivity of each.
[0074] The present disclosure is not to be limited in scope by the
specific embodiments described herein. Indeed, other various
embodiments of and modifications to the present disclosure, in
addition to those described herein, will be apparent to those of
ordinary skill in the art from the foregoing description and
accompanying drawings. Thus, such other embodiments and
modifications are intended to fall within the scope of the present
disclosure. Furthermore, although the present disclosure has been
described herein in the context of a particular implementation in a
particular environment for a particular purpose, those of ordinary
skill in the art will recognize that its usefulness is not limited
thereto and that the present disclosure may be beneficially
implemented in any number of environments for any number of
purposes. Accordingly, the claims set forth below should be
construed in view of the full breadth and spirit of the present
disclosure as described herein.
* * * * *