U.S. patent application number 12/824364 was filed with the patent office on 2010-12-30 for method for processing a substrate and apparatus for performing the same.
This patent application is currently assigned to Semes Co., Ltd.. Invention is credited to Jeong-Yong Bae, Eun-Su Rho.
Application Number | 20100326476 12/824364 |
Document ID | / |
Family ID | 43379399 |
Filed Date | 2010-12-30 |
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United States Patent
Application |
20100326476 |
Kind Code |
A1 |
Rho; Eun-Su ; et
al. |
December 30, 2010 |
METHOD FOR PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE
SAME
Abstract
An apparatus for processing substrate includes a spin chuck, a
first nozzle and a second nozzle. The spin chuck fixes and spins
the substrate on which a photoresist layer is formed. The first
nozzle is disposed over the spin chuck and provides a treatment
liquid on the substrate so as to remove the photoresist layer. The
second nozzle is disposed over the spin chuck and provides a mist
including deionized water or hydrogen peroxide on the substrate to
make contact with the treatment liquid so as to increase a
temperature of the treatment liquid. Therefore, efficiency of
removing the photoresist layer may be improved.
Inventors: |
Rho; Eun-Su;
(Chungcheongnam-do, KR) ; Bae; Jeong-Yong;
(Chungcheongnam-do, KR) |
Correspondence
Address: |
DALY, CROWLEY, MOFFORD & DURKEE, LLP
SUITE 301A, 354A TURNPIKE STREET
CANTON
MA
02021-2714
US
|
Assignee: |
Semes Co., Ltd.
Chungnam
KR
|
Family ID: |
43379399 |
Appl. No.: |
12/824364 |
Filed: |
June 28, 2010 |
Current U.S.
Class: |
134/26 ;
134/94.1; 510/176 |
Current CPC
Class: |
G03F 7/422 20130101;
G03F 7/423 20130101; H01L 21/6708 20130101 |
Class at
Publication: |
134/26 ;
134/94.1; 510/176 |
International
Class: |
B08B 3/00 20060101
B08B003/00; G03F 7/42 20060101 G03F007/42 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 30, 2009 |
KR |
10-2009-0058743 |
Claims
1. A method for processing a substrate, the method comprising:
arranging the substrate on which a photoresist layer is formed;
providing a treatment liquid for removing the photoresist layer on
the substrate; and providing a mist including deionized water or
hydrogen peroxide on the substrate to make contact with the
treatment liquid so as to increase a temperature of the treatment
liquid.
2. The method of claim 1, wherein the mist is formed by ultrasonic
waves.
3. The method of claim 1, wherein a temperature of the mist is
between about 10.degree. C. and about 99.9.degree. C.
4. The method of claim 1, wherein a particle size of the mist is
between about 1 nm and about 100000 nm.
5. The method of claim 1, wherein the mist is provided on the
substrate using a carrier gas.
6. The method of claim 1, wherein the treatment liquid and the mist
are injected at the same time.
7. The method of claim 1, wherein the treatment liquid and the mist
make contact with each other before provided on the substrate.
8. The method of claim 1, wherein the treatment liquid and the mist
make contact with each other on the substrate.
9. The method of claim 1, wherein the substrate spins, and the mist
is provided in front of a position of the substrate at which the
treatment liquid is provided.
10. The method of claim 1, wherein the treatment liquid includes
one of SPM (Sulfuric Acid/Peroxide), SOM (Sulfuric Acid/Ozone),
SC-1 (NH4OH/Peroxide/Water), SC-2 (HCl/Peroxide/Water) and BOE
(Buffered Oxide Etch: HF/NH4F).
11. An apparatus for processing a substrate, the apparatus
comprising: a spin chuck fixing and spinning the substrate on which
a photoresist layer is formed; a first nozzle disposed over the
spin chuck and providing a treatment liquid on the substrate so as
to remove the photoresist layer; and a second nozzle disposed over
the spin chuck and providing a mist including deionized water or
hydrogen peroxide on the substrate to make contact with the
treatment liquid so as to increase a temperature of the treatment
liquid.
12. The apparatus of claim 11, wherein a number of the second
nozzle is plural, and the second nozzles are disposed around the
first nozzle.
13. The apparatus of claim 11, wherein the second nozzle is
disposed at a side of the first nozzle.
14. The apparatus of claim 11, further comprising: a mist
generation part connected with the second nozzle, and generating
the mist using a ultrasonic vibration so as to provide the mist to
the second nozzle.
15. The apparatus of claim 14, further comprising: a carrier gas
providing part connected with the mist generation part, and
providing a carrier gas carrying the mist to the second nozzle.
16. The apparatus of claim 11, wherein a temperature of the mist is
between about 10.degree. C. and about 99.9.degree. C.
17. The apparatus of claim 11, wherein a particle size of the mist
is between about 1 nm and about 100000 nm.
18. The apparatus of claim 11, wherein the treatment liquid is one
of SPM, SOM, SC-1, SC-2 and BOE.
Description
PRIORITY STATEMENT
[0001] This application claims priority under 35 U.S.C. .sctn.119
to Korean Patent Application No. 2009-58743, filed on Jun. 30, 2009
in the Korean Intellectual Property Office (KIPO), the contents of
which are herein incorporated by reference in their entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] Example embodiments of the present invention relate to a
method for processing a substrate and an apparatus for performing
the method. More particularly, embodiments of the present invention
relate to a method for processing a substrate and an apparatus for
performing the method to manufacture a semiconductor device.
[0004] 2. Description of the Related Art
[0005] In general, a substrate is sequentially treated through
processes such as a photoresist coating, an exposing, a developing,
an etching and a removing a photoresist in a semiconductor
photolithographic process. The exposing, the developing and the
etching are performed using the photoresist as a mask, and then the
photoresist is removed.
[0006] Conventionally, the photoresist is removed using a solution
having sulfuric acid and hydrogen peroxide mixed with each other.
However, intermediates such as peroxymonosulfuric acid
(H.sub.2S.sub.05) and water are generated by a reaction between
sulfuric acid and hydrogen peroxide, and thus a concentration of
the solution is decreased. Thus, the photoresist may not be
entirely removed by the solution. Therefore, technology for
entirely removing the photoresist may be required.
SUMMARY OF THE INVENTION
[0007] Example embodiments of the present invention provide a
method for processing a substrate capable of removing a photoresist
on the substrate.
[0008] Example embodiments of the present invention also provide an
apparatus for performing the above-mentioned method.
[0009] According to an example embodiment of the present invention,
there is a provided a method for processing a substrate. In the
method, the substrate on which a photoresist layer is formed is
arranged. A treatment liquid for removing the photoresist layer is
provided on the substrate. A mist including deionized water or
hydrogen peroxide is provided on the substrate to make contact with
the treatment liquid so as to increase a temperature of the
treatment liquid.
[0010] In one embodiment, the mist may be formed by ultrasonic
waves.
[0011] In one embodiment, a temperature of the mist may be between
about 10.degree. C. and about 99.9.degree. C.
[0012] In one embodiment, a particle size of the mist may be
between about 1 nm and about 100000 nm.
[0013] In one embodiment, the mist may be provided on the substrate
using a carrier gas.
[0014] In one embodiment, the treatment liquid and the mist may be
injected at the same time.
[0015] In one embodiment, the treatment liquid and the mist may
make contact with each other before provided on the substrate.
[0016] In one embodiment, the treatment liquid and the mist may
make contact with each other on the substrate.
[0017] In one embodiment, the substrate may spin, and the mist may
be provided in front of a position of the substrate at which the
treatment liquid is provided.
[0018] In one embodiment, the treatment liquid may include one of
SPM (Sulfuric Acid/Peroxide), SOM (Sulfuric Acid/Ozone), SC-1
(NH4OH/Peroxide/Water), SC-2 (HCl/Peroxide/Water) and BOE (Buffered
Oxide Etch: HF/NH4F).
[0019] According to another example embodiment of the present
invention, an apparatus for processing a substrate includes a spin
chuck, a first nozzle and a second nozzle. The spin chuck fixes and
spins the substrate on which a photoresist layer is formed. The
first nozzle is disposed over the spin chuck and provides a
treatment liquid on the substrate so as to remove the photoresist
layer. The second nozzle is disposed over the spin chuck and
provides a mist including deionized water or hydrogen peroxide on
the substrate to make contact with the treatment liquid so as to
increase a temperature of the treatment liquid.
[0020] In one embodiment, a number of the second nozzle may be
plural, and the second nozzles may be disposed around the first
nozzle.
[0021] In one embodiment, the second nozzle may be disposed at a
side of the first nozzle.
[0022] In one embodiment, the apparatus may further include a mist
generation part connected with the second nozzle and generating the
mist using a ultrasonic vibration so as to provide the mist to the
second nozzle.
[0023] In one embodiment, the apparatus may further include a
carrier gas providing part connected with the mist generation part
and providing a carrier gas carrying the mist to the second
nozzle.
[0024] In one embodiment, a temperature of the mist may be between
about 10.degree. C. and about 99.9.degree. C.
[0025] In one embodiment, a particle size of the mist may be
between about 1 nm and about 100000 nm.
[0026] In one embodiment, the treatment liquid may be one of SPM,
SOM, SC-1, SC-2 and BOE.
[0027] According to the present invention, the treatment liquid for
removing the photoresist layer and the mist including the deionized
water or the hydrogen peroxide are provided on the substrate. The
mist and the treatment liquid are reacted with each other to
generate a radical hydroxide additionally. In addition, the mist
and the treatment liquid are exothermically reacted, and thus a
temperature of the treatment liquid may be increased. Therefore,
efficiency of removing the photoresist layer may be improved.
BRIEF DESCRIPTION OF THE DRAWINGS
[0028] The above and other features and advantages of the present
invention will become more apparent by describing in detailed
example embodiments thereof with reference to the accompanying
drawings, in which:
[0029] FIG. 1 is a schematic diagram illustrating an apparatus for
processing a substrate according to an example embodiment of the
present invention;
[0030] FIG. 2 and FIG. 3 are plan views illustrating injections of
first and second nozzles in FIG. 1;
[0031] FIG. 4 is a schematic diagram illustrating another example
second nozzle;
[0032] FIG. 5 and FIG. 6 are plan views illustrating injections of
first and second nozzles in FIG. 4; and
[0033] FIG. 7 is a flowchart for explaining a method for processing
the substrate using the apparatus in FIG. 1.
DETAILED DESCRIPTION OF THE INVENTION
[0034] The present invention is described more fully hereinafter
with reference to the accompanying drawings, in which example
embodiments of the present invention are shown. The present
invention may, however, be embodied in many different forms and
should not be construed as limited to the example embodiments set
forth herein. Rather, these example embodiments are provided so
that this disclosure will be thorough and complete, and will fully
convey the scope of the present invention to those skilled in the
art. In the drawings, the sizes and relative sizes of layers and
regions may be exaggerated for clarity.
[0035] It will be understood that when an element or layer is
referred to as being "on," "connected to" or "coupled to" another
element or layer, it can be directly on, connected or coupled to
the other element or layer or intervening elements or layers may be
present. In contrast, when an element is referred to as being
"directly on," "directly connected to" or "directly coupled to"
another element or layer, there are no intervening elements or
layers present. Like numerals refer to like elements throughout. As
used herein, the term "and/or" includes any and all combinations of
one or more of the associated listed items.
[0036] It will be understood that, although the terms first,
second, third, etc. may be used herein to describe various
elements, components, regions, layers and/or sections, these
elements, components, regions, layers and/or sections should not be
limited by these terms. These terms are only used to distinguish
one element, component, region, layer or section from another
region, layer or section. Thus, a first element, component, region,
layer or section discussed below could be termed a second element,
component, region, layer or section without departing from the
teachings of the present invention.
[0037] Spatially relative terms, such as "beneath," "below,"
"lower," "above," "upper" and the like, may be used herein for ease
of description to describe one element or feature's relationship to
another element(s) or feature(s) as illustrated in the figures. It
will be understood that the spatially relative terms are intended
to encompass different orientations of the device in use or
operation in addition to the orientation depicted in the figures.
For example, if the device in the figures is turned over, elements
described as "below" or "beneath" other elements or features would
then be oriented "above" the other elements or features. Thus, the
exemplary term "below" can encompass both an orientation of above
and below. The device may be otherwise oriented (rotated 90 degrees
or at other orientations) and the spatially relative descriptors
used herein interpreted accordingly.
[0038] The terminology used herein is for the purpose of describing
particular example embodiments only and is not intended to be
limiting of the present invention. As used herein, the singular
forms, "a," "an" and "the" are intended to include the plural forms
as well, unless the context clearly indicates otherwise. It will be
further understood that the terms "comprises" and/or "comprising,"
when used in this specification, specify the presence of stated
features, integers, steps, operations, elements, and/or components,
but do not preclude the presence or addition of one or more other
features, integers, steps, operations, elements, components, and/or
groups thereof.
[0039] Example embodiments of the invention are described herein
with reference to cross-sectional illustrations that are schematic
illustrations of idealized example embodiments (and intermediate
structures) of the present invention. As such, variations from the
shapes of the illustrations as a result, for example, of
manufacturing techniques and/or tolerances, are to be expected.
Thus, example embodiments of the present invention should not be
construed as limited to the particular shapes of regions
illustrated herein but are to include deviations in shapes that
result, for example, from manufacturing. For example, an implanted
region illustrated as a rectangle will, typically, have rounded or
curved features and/or a gradient of implant concentration at its
edges rather than a binary change from implanted to non-implanted
region. Likewise, a buried region formed by implantation may result
in some implantation in the region between the buried region and
the surface through which the implantation takes place. Thus, the
regions illustrated in the figures are schematic in nature and
their shapes are not intended to illustrate the actual shape of a
region of a device and are not intended to limit the scope of the
present invention.
[0040] Unless otherwise defined, all terms (including technical and
scientific terms) used herein have the same meaning as commonly
understood by one of ordinary skill in the art to which this
invention belongs. It will be further understood that terms, such
as those defined in commonly used dictionaries, should be
interpreted as having a meaning that is consistent with their
meaning in the context of the relevant art and will not be
interpreted in an idealized or overly formal sense unless expressly
so defined herein.
[0041] Hereinafter, the present invention will be explained in
detail with reference to the accompanying drawings.
[0042] FIG. 1 is a schematic diagram illustrating an apparatus for
processing a substrate according to an example embodiment of the
present invention.
[0043] Referring to FIG. 1, the apparatus 100 removes a photoresist
layer on a substrate S, and the apparatus 100 includes a spin chuck
110, a first nozzle 120, a second nozzle 130, a mist generation
part 140 and a carrier gas providing part 150.
[0044] The spin chuck 110 fixes and spins the substrate S. For
example, the spin chuck 110 may include a mechanical chuck fixing
the substrate S with a mechanical force, an electrostatic chuck
fixing the substrate S with an electrostatic force, a vacuum chuck
fixing the substrate S with a vacuum force, and so on.
[0045] The first nozzle 120 is disposed over the spin chuck 110 and
provides a treatment liquid 122 to the substrate S. For example,
the treatment liquid 122 may include one of SPM (Sulfuric acid
Peroxide Mixture: Sulfuric Acid/Peroxide), SOM (Sulfuric Acid Ozone
Mixture: Sulfuric Acid/Ozone), SC-1 (Standard Clean-1:
NH4OH/Peroxide/Water), SC-2 (Standard Clean-2: HCl/Peroxide/Water),
BOE (Buffered Oxide Etch: HF/NH4F), etc.
[0046] The treatment liquid 122 forms radical hydroxide and radical
hydroxide reacts with the photoresist layer, so that the
photoresist layer is removed. A temperature of the treatment liquid
122 may be high so that a reactivity of the photoresist layer is
improved. For example, the temperature of the treatment liquid 122
may be between about 150.degree. C. and about 240.degree. C.
[0047] For example, each of the solutions forming the treatment
liquid 122 may be combined with each other, and then may be
provided on the substrate S. When each of the solutions forming the
treatment liquid 122 is combined with each other before provided on
the substrate S, the treatment liquid 122 may be continuously
heated to be maintained between about 150.degree. C. and about
240.degree. C.
[0048] Alternatively, each of the solutions forming the treatment
liquid 122 may be provided through lines different from each other,
and the solutions may be combined right before the solutions are
provided on the substrate S. When the solutions forming the
treatment liquid 122 are combined with each other right before the
solutions are provided on the substrate S, the temperature of the
treatment liquid 122 may be increased to between about 150.degree.
C. and about 240.degree. C. by the combination reaction.
[0049] A plurality of second nozzles 130 is disposed around the
first nozzle 120 over the spin chuck 110. The second nozzle 130
provides a mist 132 on the substrate S. The mist 132 includes
deionized water or hydrogen peroxide.
[0050] The first nozzle 120 and the second nozzles 130 may
sequentially or simultaneously provide the treatment liquid 122 and
the mist 132.
[0051] FIG. 2 and FIG. 3 are plan views illustrating injections of
first nozzle and the second nozzles in FIG. 1.
[0052] Referring to FIG. 2, the treatment liquid 122 provided from
the first nozzle 120 and the mist 132 provided from the second
nozzle 130 may make contact with each other and be combined with
each other before provided on the substrate S.
[0053] Referring to FIG. 3, the treatment liquid 122 and the mist
132 may make contact with each other and be combined with each
other after provided on the substrate S. When the treatment liquid
122 and the mist 132 make contact with each other and are combined
with each other after provided on the substrate S, the mist 132 may
surround the treatment liquid 122 on the substrate S because the
second nozzles 130 are disposed around the first nozzle 120.
[0054] FIG. 4 is a schematic diagram illustrating another example
second nozzle.
[0055] Referring to FIG. 4, a second nozzle 130a is disposed at a
side of the first nozzle 120 over the spin chuck 110. The second
nozzle 130a provides the mist 132 on the substrate S.
[0056] FIG. 5 and FIG. 6 are plan views illustrating injections of
first nozzle and the second nozzles in FIG. 4.
[0057] Referring to FIG. 5, the treatment liquid 122 provided from
the first nozzle 120 and the mist 132 provided from the second
nozzle 130 may make contact with each other and be combined with
each other before provided on the substrate S.
[0058] Referring to FIG. 6, the treatment liquid 122 and the mist
132 may make contact with each other and be combined with each
other after provided on the substrate S. For example, the mist 132
may be provided in front of a position of the substrate S at which
the treatment liquid 122 is provided according to a spin direction
of the substrate S. Alternatively, the treatment liquid 122 may be
provided in front of a position of the substrate S at which the
mist 132 is provided according to the spin direction of the
substrate S. Therefore, the mist 132 and the treatment liquid 122
may be spread, make contact each other, and then be combined with
each other on the substrate S according to the spin of the
substrate S.
[0059] When the treatment liquid 122 is SPM, sulfuric acid and
hydrogen peroxide in SPM are forwardly reacted, and then
peroxymonosulfuric acid (H2S05) and water are generated. In this
case, a temperature of SPM is high enough to easily evaporate the
water. Therefore, the deionized water mist or the hydrogen peroxide
mist provided to SPM is reacted with peroxymonosulfuric acid to
generate radical hydroxide additionally, and thus the photoresist
layer may be efficiently removed. In addition, the deionized water
mist or the hydrogen peroxide mist and peroxymonosulfuric acid are
exothermically reacted, and thus the temperature of SPM is
increased. Thus, reactivity between SPM and the photoresist layer
may be improved. Therefore, efficiency of SPM removing the
photoresist layer may be improved.
[0060] When the mist 132 makes contact with one of SOM, SC-1, SC-2
and BOE, a reaction which is similar to the reaction occurring when
the mist 132 makes contact with SPM occurs, and thus efficiency of
removing the photoresist layer may be improved.
[0061] Referring to FIG. 1 again, the mist generation part 140
generates the mist 132. For example, the mist generation part 140
may include an ultrasonic vibrator. Ultrasonic waves of the
ultrasonic vibrator may be between about several KHz and about
several tens MHz.
[0062] The mist 132 having a particle size less than about 1 nm
hardly exists. When the particle size of the mist 132 is greater
than about 100000 nm, the mist 132 absorbs heat of the treatment
liquid 122, and thus efficiency of removing the photoresist layer
may be decreased. Therefore, the particle size of the mist 132 may
be between about 1 nm and about 100000 nm.
[0063] In the ultrasonic vibrator generating the ultrasonic waves
having about several tens MHz, the mist 132 having the particle
size of about 1 nm may be generated. In the ultrasonic vibrator
generating the ultrasonic waves having about several KHz, the mist
132 having the particle size of about 100000 nm may be
generated.
[0064] The mist 132 is generated by the ultrasonic waves, and thus
a temperature of the mist 132 may be less than about 100.degree. C.
When the temperature of the mist 132 is less than about 10.degree.
C., the mist 132 is hardly maintained. When the temperature of the
mist 132 is greater than about 99.9.degree. C., the mist 132 may be
evaporated. Therefore, the temperature of the mist 132 may be
between about 10.degree. C. and about 99.9.degree. C.
[0065] Vapor or steam is formed by a heating, but the mist 132 is
formed by the ultrasonic waves. Therefore, the mist 132 may be
formed easily compared to the vapor or the steam. In addition, the
particle size of the mist 132 is greater than that of the vapor or
the steam, and thus a flux of the mist 132 may be controlled easier
than that of the vapor or the steam, and the mist 132 may be
sufficiently provided to the substrate S.
[0066] A first providing line 142 connects the mist generation part
140 with the second nozzle 130. The mist 132 is provided to the
second nozzle 130 through the first providing line 142.
[0067] The carrier gas providing part 150 provides a carrier gas to
the mist 132 to carry the mist 132 generated from the mist
generation part 140 to the second nozzle 130, and the carrier gas
providing part 150 includes a tank 151, a second providing line
152, a valve 153, a flux controller 154 and a heater 155.
[0068] The tank 151 stores the carrier gas. The carrier gas may
easily carry the mist 132 to the second nozzle 130. For example,
the carrier gas may include a nitrogen gas.
[0069] The second providing line 152 connects the tank 151 with the
first providing line 142. The carrier gas is provided to the first
providing line 142 through the second providing line 152.
[0070] The valve 153 is disposed on the second providing line 152,
and opens and closes the second providing line 152.
[0071] The flux controller 154 is disposed on the second providing
line 152, and controls a flux of the carrier gas provided from the
second providing line 152.
[0072] The flux controller 154 controls the flux of the carrier
gas, and thus a flux of the mist 132 provided to the second nozzle
130 may be controlled.
[0073] The heater 155 is disposed on the second providing line 152,
and controls a temperature of the carrier gas provided through the
second providing line 152. When the temperature of the carrier gas
is not less than about 100.degree. C., the mist 132 may be
evaporated by the carrier gas. Therefore, the carrier gas may be
heated by the heater 155 between about 20.degree. C. and about
99.9.degree. C.
[0074] The apparatus 100 continuously provides the mist 132 to the
treatment liquid 122. The radical hydroxide is additionally
generated by the reaction between the mist 132 and the treatment
liquid 122. The additionally generated radical hydroxide removes
the photoresist layer, and thus the photoresist layer may be
efficiently removed. The mist 132 and the treatment liquid 122 are
exothermically reacted, and thus the temperature of the treatment
liquid 122 is increased. Thus, reactivity between the treatment
liquid 122 and the photoresist layer is improved. Therefore, the
apparatus 100 may improve efficiency of removing the photoresist
layer.
[0075] FIG. 7 is a flowchart for explaining a method for processing
the substrate using the apparatus in FIG. 1.
[0076] Referring to FIGS. 1 and 7, the substrate S for
manufacturing a semiconductor device is arranged (step S100).
[0077] The substrate S has a photoresist layer formed on the
substrate. The substrate S may be fixed and spun by a supporting
member. For example, the supporting member may be the spin chuck
110. The spin chuck 110 may fix the substrate S using a mechanical
power, an electrostatic force or a vacuum power.
[0078] The treatment liquid 122 is provided on the substrate S on
which the photoresist layer is formed (step S200).
[0079] For example, the treatment liquid may include SPM, SOM,
SC-1, SC-2, BOE, etc.
[0080] The temperature of the treatment liquid 122 is between about
150.degree. C. and about 240.degree. C. For example, each of the
solutions forming the treatment liquid 122 may be combined with
each other, and then the treatment liquid 122 may be provided on
the substrate S. When each of the solutions forming the treatment
liquid 122 is combined with each other before provided on the
substrate S, the treatment liquid 122 may be continuously heated so
that the temperature of the treatment liquid 122 is maintained
between about 150.degree. C. and about 240.degree. C.
Alternatively, each of the solutions forming the treatment liquid
122 may be combined with each other right before provided on the
substrate S. When each of the solutions forming the treatment
liquid 122 is combined with each other right before provided on the
substrate S, the temperature of the treatment liquid 122 may be
increased between about 150.degree. C. and about 240.degree. C. due
to the combination reaction.
[0081] The treatment liquid 122 removes the photoresist layer
through a chemical reaction. For example, the treatment liquid 122
forms radical hydroxide, and the radical hydroxide is reacted with
the photoresist layer, so that the photoresist layer is
removed.
[0082] The mist 132 is provided on the substrate S (step S300).
[0083] The mist 132 includes deionized water or hydrogen peroxide.
The mist 132 may be generated by ultrasonic waves. The ultrasonic
waves may have a frequency of between about several KHz and several
tens MHz.
[0084] The mist 132 having a particle size less than about 1 nm
hardly exists. When the particle size of the mist 132 is greater
than about 100000 nm, the mist 132 absorbs heat of the treatment
liquid 122. Thus, efficiency of removing the photoresist layer may
be decreased because the temperature of the treatment liquid 122 is
decreased. Therefore, the particle size of the mist 132 may be
between about 1 nm and about 100000 nm.
[0085] The mist 132 is generated by the ultrasonic waves, and thus
a temperature of the mist 132 may be less than about 100.degree. C.
When the temperature of the mist 132 is less than about 10.degree.
C., the mist 132 is hardly maintained. When the temperature of the
mist 132 is greater than about 99.9.degree. C., the mist 132 may be
evaporated by heat. Therefore, the temperature of the mist 132 may
be between about 10.degree. C. and about 99.9.degree. c.
[0086] Vapor or steam is formed by a heating, but the mist 132 is
formed by the ultrasonic waves. Therefore, the mist 132 may be
formed easily compared to the vapor or the steam. In addition, the
particle size of the mist 132 is greater than that of the vapor or
the steam, and thus a flux of the mist 132 may be controlled easier
than that of the vapor or the steam and the mist 132 may be
sufficiently provided to the substrate S.
[0087] The mist 132 may be provided on the substrate S using the
carrier gas. For example, the carrier gas may include a nitrogen
gas. The flux of the mist 132 may be controlled by controlling a
flux of the carrier gas. The carrier gas may be provided with a
steady temperature by heating. When the temperature of the carrier
gas is not less than about 100.degree. C., the mist 132 may be
evaporated by the carrier gas. Thus, the temperature of the carrier
gas may be maintained between about 20.degree. C. and about
99.9.degree. C.
[0088] For example, the treatment liquid 122 and the mist 132 are
sequentially provided on the substrate S. Alternatively, the
treatment liquid 122 and the mist 132 are provided on the substrate
S at the same time.
[0089] For example, the treatment liquid 122 and the mist 132 may
make contact with each other and be combined with each other before
provided on the substrate S. Alternatively, the treatment liquid
122 and the mist 132 may make contact with each other and be
combined with each other after provided on the substrate S.
[0090] For example, the mist 132 may be provided in front of a
position of the substrate S at which the treatment liquid 122 is
provided according to a spin direction of the substrate S.
Alternatively, the treatment liquid 122 may be provided in front of
a position of the substrate S at which the mist 132 is provided
according to the spin direction of the substrate S.
[0091] Thus, the mist 132 may continuously make contact with the
treatment liquid 122.
[0092] When the treatment liquid 122 is SPM, sulfuric acid and
hydrogen peroxide in SPM is forwardly reacted, and then
peroxymonosulfuric acid (H2S05) and water are generated. A
temperature of SPM is high enough to evaporate the water, and thus
the water is easily evaporated. Therefore, the deionized water mist
or the hydrogen peroxide mist provided to SPM is reacted with
peroxymonosulfuric acid to generate radical hydroxide additionally,
and thus the photoresist layer may be efficiently removed. In
addition, the deionized water mist or the hydrogen peroxide mist
and peroxymonosulfuric acid are exothermically reacted, and thus
the temperature of SPM is increased.
[0093] When the mist 132 makes contact with one of SOM, SC-1, SC-2
and BOE, a reaction which is similar to the reaction occurring when
the mist 132 makes contact with SPM occurs, and thus efficiency of
removing the photoresist layer may be improved.
[0094] As described above, the mist 132 and the treatment liquid
122 are chemically reacted with each other to additionally generate
radical hydroxide. The additionally generated radical hydroxide
removes the photoresist layer, and thus the photoresist layer may
be efficiently removed. The mist 132 and the treatment liquid 122
are exothermically reacted, and thus the temperature of the
treatment liquid 122 is increased.
[0095] Thus, reactivity between the treatment liquid 122 and the
photoresist layer is improved.
[0096] According to the present invention, the treatment liquid for
removing the photoresist layer and the mist including the deionized
water and the hydrogen peroxide are provided on the substrate. The
mist and the treatment liquid are reacted with each other to
generate the radical hydroxide additionally. The additionally
generated radical hydroxide removes the photoresist layer, and thus
the photoresist layer may be efficiently removed. In addition, the
mist and the treatment liquid are exothermically reacted, and thus
the temperature of the treatment liquid may be increased.
Therefore, efficiency of removing the photoresist layer may be
improved.
[0097] The foregoing is illustrative of the present invention and
is not to be construed as limiting thereof. Although a few example
embodiments of the present invention have been described, those
skilled in the art will readily appreciate that many modifications
are possible in the example embodiments without materially
departing from the novel teachings and advantages of the present
invention. Accordingly, all such modifications are intended to be
included within the scope of the present invention as defined in
the claims. In the claims, means-plus-function clauses are intended
to cover the structures described herein as performing the recited
function and not only structural equivalents but also equivalent
structures. Therefore, it is to be understood that the foregoing is
illustrative of the present invention and is not to be construed as
limited to the specific example embodiments disclosed, and that
modifications to the disclosed example embodiments, as well as
other example embodiments, are intended to be included within the
scope of the appended claims. The present invention is defined by
the following claims, with equivalents of the claims to be included
therein.
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