U.S. patent application number 12/359434 was filed with the patent office on 2010-07-29 for method for tuning the threshold voltage of a metal gate and high-k device.
This patent application is currently assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION. Invention is credited to MICHAEL P. CHUDZIK, MICHAEL A. GRIBELYUK, RASHMI JHA, RENEE T. MO, NAIM MOUMEN, KEITH KWONG HON WONG.
Application Number | 20100187643 12/359434 |
Document ID | / |
Family ID | 42314083 |
Filed Date | 2010-07-29 |
United States Patent
Application |
20100187643 |
Kind Code |
A1 |
CHUDZIK; MICHAEL P. ; et
al. |
July 29, 2010 |
METHOD FOR TUNING THE THRESHOLD VOLTAGE OF A METAL GATE AND HIGH-K
DEVICE
Abstract
A metal gate and high-k dielectric device includes a substrate,
an interfacial layer on top of the substrate, a high-k dielectric
layer on top of the interfacial layer, a metal film on top of the
high-k dielectric layer, a cap layer on top of the metal film and a
metal gate layer on top of the cap layer. The thickness of the
metal film and the thickness of the cap layer are tuned such that a
target concentration of a cap layer material is present at an
interface of the metal film and the high-k dielectric layer.
Inventors: |
CHUDZIK; MICHAEL P.;
(DANBURY, CT) ; GRIBELYUK; MICHAEL A.; (STAMFORD,
CT) ; JHA; RASHMI; (TOLEDO, OH) ; MO; RENEE
T.; (BRIARCLIFF MANOR, NY) ; MOUMEN; NAIM;
(WALDEN, NY) ; WONG; KEITH KWONG HON; (WAPPINGERS
FALLS, NY) |
Correspondence
Address: |
INTERNATIONAL BUSINESS MACHINES CORPORATION;DEPT. 18G
BLDG. 321-482, 2070 ROUTE 52
HOPEWELL JUNCTION
NY
12533
US
|
Assignee: |
INTERNATIONAL BUSINESS MACHINES
CORPORATION
ARMONK
NY
|
Family ID: |
42314083 |
Appl. No.: |
12/359434 |
Filed: |
January 26, 2009 |
Current U.S.
Class: |
257/411 ;
257/E21.477; 257/E29.255; 438/591 |
Current CPC
Class: |
H01L 29/4958 20130101;
H01L 29/517 20130101; H01L 21/28088 20130101; H01L 29/4966
20130101; H01L 21/28079 20130101 |
Class at
Publication: |
257/411 ;
438/591; 257/E29.255; 257/E21.477 |
International
Class: |
H01L 29/78 20060101
H01L029/78; H01L 21/441 20060101 H01L021/441 |
Claims
1. A method of forming a device, comprising: depositing an
interfacial layer on top of a substrate; depositing a high-k
dielectric layer on top of the interfacial layer; depositing a
metal film on top of the high-k dielectric layer; depositing a cap
layer on top of the metal film; depositing a metal gate layer on
top of the cap layer; and performing an activation anneal, wherein
the thickness of the metal film and the thickness of the cap layer
are tuned such that a target concentration of a cap layer material
is present at an interface of the metal film and the high-k
dielectric layer after the performing step without allowing the cap
layer material to diffuse close to the substrate, wherein the
target concentration is approximately 0.1% to 10%.
2. A method according to claim 1, wherein the interfacial layer is
deposited by thermal oxidation.
3. A method according to claim 2, wherein the interfacial layer is
selected from the group consisting of: oxide, nitride and
oxynitride.
4. A method according to claim 3, wherein the interfacial layer has
a thickness of approximately 1 nm to 7 nm.
5. A method according to claim 1, wherein the high-k dielectric
layer is deposited by thermal oxidation.
6. A method according to claim 5, wherein the high-k dielectric
layer is selected from the group consisting of: zirconium oxide
(ZrO2), hafnium oxide (HfO2), zirconium silicate (ZrSiO4) and
hafnium silicate (HfSiO4).
7. A method according to claim 6, wherein the high-k dielectric
layer has a thickness of approximately 1 nm to 7 nm.
8. A method according to claim 1, wherein the metal film has a
thickness of approximately 0.1 nm to 10 nm.
9. A method according to claim 8, wherein the metal film is
deposited by physical vapor deposition (PVD), metalorganic chemical
vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
10. A method according to claim 9, wherein the metal film is
selected from the group consisting of: ruthenium (Ru), tungsten
(W), tantalum (Ta), titanium (Ti), tantalum nitride (TaN) and
titanium nitride (TiN).
11. A method according to claim 1, wherein the cap layer is
deposited on top of the metal film by physical vapor deposition
(PVD), metalorganic chemical vapor deposition (MOCVD) or molecular
beam epitaxy (MBE).
12. A method according to claim 11, wherein the cap layer is
selected from the group consisting of: metal oxides (MOx), metal
nitrides (MNx) and pure metals.
13. A method according to claim 12, wherein the cap layer has a
thickness of approximately 0.1 nm to 5 nm.
14. A method according to claim 1, wherein the metal gate layer is
deposited by physical vapor deposition (PVD), metalorganic chemical
vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
15. A method according to claim 14, wherein the metal gate layer
has thickness of approximately 0.1 nm to 10 nm.
16. A method according to claim 15, wherein the metal film and the
metal gate layer are the same material.
17. (canceled)
18. A device, comprising: a substrate; an interfacial layer on top
of the substrate; a high-k dielectric layer on top of the
interfacial layer; a metal film on top of the high-k dielectric
layer; a cap layer on top of the metal film; and a metal gate layer
on top of the cap layer, wherein a target concentration of a cap
layer material is present at an interface of the metal film and the
high-k dielectric layer, wherein the target concentration is
approximately 0.1% to 10%.
19. A device according to claim 18, wherein the interfacial layer
is selected from the group consisting of: oxide, nitride and
oxynitride.
20. A device according to claim 18, wherein the high-k dielectric
layer is selected from the group consisting of: zirconium oxide
(ZrO2), hafnium oxide (HfO2), zirconium silicate (ZrSiO4) and
hafnium silicate (HfSiO4).
21. A device according to claim 18, wherein the metal film is
selected from the group consisting of: ruthenium (Ru), tungsten
(W), tantalum (Ta), titanium (Ti), tantalum nitride (TaN) and
titanium nitride (TiN).
22. A device according to claim 18, wherein the cap layer is
selected from the group consisting of: metal oxides (MOx), metal
nitrides (MNx) and pure metals.
23. A device according to claim 18, wherein metal film and the
metal gate layer are the same material.
24. A device according to claim 18, wherein the interfacial layer
has a thickness of approximately 1 nm to 7 nm, the high-k
dielectric layer has a thickness of approximately 1 nm to 7 nm, the
metal film has a thickness of approximately 0.1 nm to 10 nm, the
cap layer has a thickness of approximately 0.1 nm to 5 nm and the
metal gate layer has thickness of approximately 0.1 nm to 10
nm.
25. (canceled)
Description
BACKGROUND OF THE INVENTION
[0001] The present invention relates generally to a semiconductor
device and method of forming the same and, more specifically, to
metal gate and high dielectric constant (high-k) devices.
[0002] In devices with poly-Si gates, achieving a desired work
function of a gate material for n-FET and p-FET CMOS devices to
meet an operating voltage requirement is achieved by heavy doping
of poly-Si, an acceptor dopant for p-FET and a donor for n-FET. In
a high-k dielectric/metal gate stack, different metal gate
materials which possess the desired work function are used for
n-FET and p-FET devices. Since the work function of the metal gate
material depends on the high-k gate dielectric and processing
conditions, selection of suitable gate materials presents a
challenge for process integration. Metal gate work function may
also be adjusted by placing cap layers between the metal gate and
the high-k gate dielectric. The position of the cap layers after
thermal processing determines the work function and threshold
voltage (Vt) of the device. Diffusion of the cap layer through the
thin high-k gate dielectric into an interfacial layer during
anneals causes degradation of carrier mobility. Attempts to limit
diffusion by nitridation of the high-k gate dielectric had limited
success.
SUMMARY OF THE INVENTION
[0003] In a first aspect of the invention, a method of forming a
device includes depositing an interfacial layer on top of a
substrate. The method includes depositing a high-k dielectric layer
on top of the interfacial layer. The method includes depositing a
metal film on top of the high-k dielectric layer. The method
includes depositing a cap layer on top of the metal film. The
method further includes depositing a metal gate layer on top of the
cap layer. The method also includes performing an activation
anneal.
[0004] In a further aspect of the invention, a device includes a
substrate. The device includes an interfacial layer on top of the
substrate. The device includes a high-k dielectric layer on top of
the interfacial layer. The device includes a metal film on top of
the high-k dielectric layer. The device further includes a cap
layer on top of the metal film. The device also includes a metal
gate layer on top of the cap layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0005] The present invention is described in the detailed
description below, in reference to the accompanying drawings that
depict non-limiting examples of exemplary embodiments of the
present invention.
[0006] FIG. 1 shows a starting structure and processing steps in
accordance with an embodiment of the invention;
[0007] FIGS. 2-4 show processing steps and intermediate structures
in accordance with an embodiment of the invention; and
[0008] FIG. 5 shows processing steps and a final structure in
accordance with an embodiment of the invention.
DETAILED DESCRIPTION OF THE INVENTION
[0009] FIG. 1 shows a starting structure and processing steps in
accordance with an embodiment of the invention. A substrate 100 is
cleaned by conventional processes. Substrate 100 may be a Si wafer.
An interfacial layer 110 is formed on substrate 100. Interfacial
layer 110 may be formed by thermal oxidation or any known or later
developed processes. Interfacial layer 110 may include, but is not
limited to: oxide, nitride and oxynitride. Interfacial layer 110
may be formed with or without subsequent nitridation. Interfacial
layer 110 may have a thickness of approximately 1 nm to 7 nm.
[0010] Referring to FIG. 2, a high-k dielectric layer 120 is
deposited on top of interfacial layer 110. High-k dielectric layer
120 may be deposited by thermal oxidation or any known or later
developed processes. High-k dielectric layer 120 may include, but
is not limited to: zirconium oxide (ZrO2), hafnium oxide (HfO2),
zirconium silicate (ZrSiO4) and hafnium silicate (HfSiO4). High-k
dielectric layer 120 may be approximately 1 nm to 7 nm thick.
[0011] Referring to FIG. 3, a metal film 130 is deposited on top of
high-k dielectric layer 120. Metal film 130 may be deposited by
physical vapor deposition (PVD), metalorganic chemical vapor
deposition (MOCVD), molecular beam epitaxy (MBE) or any known or
later developed processes. Metal film 130 may be approximately 0.1
nm to 10 nm thick. Metal film 130 may include, but is not limited
to: ruthenium (Ru), tungsten (W), tantalum (Ta), titanium (Ti),
tantalum nitride (TaN) and titanium nitride (TiN).
[0012] Referring to FIG. 4, a cap layer 140 is deposited on top of
metal film 130. Cap layer 140 may be deposited by physical vapor
deposition (PVD), metalorganic chemical vapor deposition (MOCVD),
molecular beam epitaxy (MBE) or any known or later developed
processes. Cap layer 140 may have a thickness of approximately 0.1
nm to 5 nm. Cap layer 140 may include, but is not limited to metal
oxides (MOx), metal nitrides (MNx) and pure metals. MOx may
include, but is not limited to: tantalum oxide (TaOx) and titanium
oxide (TiOx). MNx may include, but is not limited to tantalum
nitride (TaNx) and titanium nitride (TiNx). Pure metals may
include, but are not limited to: tungsten (W), tantalum (Ta) and
titanium (Ti).
[0013] FIG. 5 shows processing steps and a final structure in
accordance with an embodiment of the invention. A metal gate layer
150 is deposited on top of cap layer 140. Metal gate layer 150 may
be deposited by physical vapor deposition (PVD), metalorganic
chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or
any known or later developed processes. Metal gate layer 150 has a
thickness of approximately 0.1 nm to 10 nm. Metal film 130 and
metal gate layer 150 may be the same or different. A gate is
comprised of metal film 130, cap layer 140 and metal gate layer
150. Poly-Si may be deposited on top of the gate (not shown). The
gate may be patterned. Spacers 160 may be formed along with active
device regions (not shown). Thermal processing leads to diffusion
of cap layer 140. The optimum location of species of a cap layer
with respect to gate dielectric leads to setting up a desired work
function of the metal gate and thus desired threshold voltage (Vt)
of the device without compromising carrier mobility.
[0014] The thickness of metal film 130 and cap layer 140 may be
tuned so that a target concentration of a cap layer material is
present at an interface of metal film 130 and high-k dielectric
layer 120 after activation anneal without allowing the cap layer
material to diffuse close to the Si in substrate 100. The target
concentration may be approximately 0.1% to 10%. The former will
lead to desired threshold voltage (Vt). The latter will eliminate
degradation of carrier mobility. Additionally, placing the cap
layer 140 away from the interface of metal film 130 and high-k
dielectric layer 120 allows for the deposition of thicker cap
layers then currently employed, making the process more
manufacturable.
[0015] The method as described above is used in the fabrication of
integrated circuit chips. The resulting integrated circuit chips
can be distributed by the fabricator in raw wafer form (that is, as
a single wafer that has multiple unpackaged chips), as a bare die,
or in a packaged form. In the latter case the chip is mounted in a
single chip package (such as a plastic carrier, with leads that are
affixed to a motherboard or other higher level carrier) or in a
multichip package (such as a ceramic carrier that has either or
both surface interconnections or buried interconnections). In any
case the chip is then integrated with other chips, discrete circuit
elements, and/or other signal processing devices as part of either
(a) an intermediate product, such as a motherboard, or (b) an end
product. The end product can be any product that includes
integrated circuit chips, ranging from toys and other low-end
applications to advanced computer products having a display, a
keyboard or other input device, and a central processor.
[0016] The description of the present invention has been presented
for purposes of illustration and description, but is not intended
to be exhaustive or limited to the invention in the form disclosed.
Many modifications and variations will be apparent to those of
ordinary skill in the art without departing from the scope and
spirit of the invention. The embodiment was chosen and described in
order to best explain the principles of the invention and the
practical application, and to enable others of ordinary skill in
the art to understand the invention for various embodiments with
various modifications as are suited to the particular use
contemplated.
* * * * *