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NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTURE
App 20170271471 - Breil; Nicolas L. ; et al. | 2017-09-21 |
NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTURE
App 20170194454 - Breil; Nicolas L. ; et al. | 2017-07-06 |
High performance CMOS circuits, and methods for fabricating same
Grant 8,383,483 - Arnold , et al. February 26, 2 | 2013-02-26 |
TiC as a thermally stable p-metal carbide on high k SiO.sub.2 gate stacks
Grant 8,288,237 - Callegari , et al. October 16, 2 | 2012-10-16 |
Method of forming metal/high-.kappa. gate stacks with high mobility
Grant 8,153,514 - Andreoni , et al. April 10, 2 | 2012-04-10 |
Metal oxynitride as a pFET material
Grant 7,776,701 - Callegari , et al. August 17, 2 | 2010-08-17 |
Method For Tuning The Threshold Voltage Of A Metal Gate And High-k Device
App 20100187643 - CHUDZIK; MICHAEL P. ; et al. | 2010-07-29 |
Method for tuning the threshold voltage of a metal gate and high-k device
Grant 7,754,594 - Chudzik , et al. July 13, 2 | 2010-07-13 |
High-temperature stable gate structure with metallic electrode
Grant 7,683,418 - Park , et al. March 23, 2 | 2010-03-23 |
TiC as a thermally stable p-metal carbide on high k SiO.sub.2 gate stacks
Grant 7,667,277 - Callegari , et al. February 23, 2 | 2010-02-23 |
High Performance Cmos Circuits, And Methods For Fabricating Same
App 20100041221 - Arnold; John C. ; et al. | 2010-02-18 |
TiC AS A THERMALLY STABLE p-METAL CARBIDE ON HIGH k SiO2 GATE STACKS
App 20100015790 - Callegari; Alessandro C. ; et al. | 2010-01-21 |
Field Effect Transistor With Reduced Overlap Capacitance
App 20090212332 - Wang; Xinlin ; et al. | 2009-08-27 |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
Grant 7,566,938 - Cabral, Jr. , et al. July 28, 2 | 2009-07-28 |
Gate Stack Structure With Oxygen Gettering Layer
App 20090152651 - Bu; Huiming ; et al. | 2009-06-18 |
High-temperature Stable Gate Structure With Metallic Electrode
App 20090101993 - Park; Dae-Gyu ; et al. | 2009-04-23 |
High-temperature stable gate structure with metallic electrode
Grant 7,521,345 - Park , et al. April 21, 2 | 2009-04-21 |
METAL OXYNITRIDE AS A pFET MATERIAL
App 20080299730 - Callegari; Alessandro C. ; et al. | 2008-12-04 |
METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY
App 20080293259 - Andreoni; Wanda ; et al. | 2008-11-27 |
Metal oxynitride as a pFET material
Grant 7,436,034 - Callegari , et al. October 14, 2 | 2008-10-14 |
High-temperature Stable Gate Structure With Metallic Electrode
App 20070262348 - Park; Dae-Gyu ; et al. | 2007-11-15 |
High-temperature stable gate structure with metallic electrode
Grant 7,279,413 - Park , et al. October 9, 2 | 2007-10-09 |
High performance CMOS circuits, and methods for fabricating the same
App 20070152276 - Arnold; John C. ; et al. | 2007-07-05 |
Metal oxynitride as a pFET material
App 20070138578 - Callegari; Alessandro C. ; et al. | 2007-06-21 |
Polycrystalline silicon layer with nano-grain structure and method of manufacture
Grant 7,232,774 - Chakravarti , et al. June 19, 2 | 2007-06-19 |
Method of forming metal/high-k gate stacks with high mobility
App 20060289903 - Andreoni; Wanda ; et al. | 2006-12-28 |
Method of forming metal/high-k gate stacks with high mobility
Grant 7,115,959 - Andreoni , et al. October 3, 2 | 2006-10-03 |
Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs
Grant 7,091,128 - Ajmera , et al. August 15, 2 | 2006-08-15 |
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
App 20060163630 - Callegari; Alessandro C. ; et al. | 2006-07-27 |
Chemical treatment to retard diffusion in a semiconductor overlayer
Grant 7,071,103 - Chan , et al. July 4, 2 | 2006-07-04 |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
App 20060138603 - Cabral; Cyril JR. ; et al. | 2006-06-29 |
Electron holography method
Grant 7,015,469 - Wang , et al. March 21, 2 | 2006-03-21 |
Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs
App 20060057797 - Ajmera; Atul C. ; et al. | 2006-03-16 |
Chemical Treatment To Retard Diffusion In A Semiconductor Overlayer
App 20060024934 - Chan; Kevin K. ; et al. | 2006-02-02 |
Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs
Grant 6,991,979 - Ajmera , et al. January 31, 2 | 2006-01-31 |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
Grant 6,982,230 - Cabral, Jr. , et al. January 3, 2 | 2006-01-03 |
Method of forming metal/high-k gate stacks with high mobility
App 20050280105 - Andreoni, Wanda ; et al. | 2005-12-22 |
High-temperature stable gate structure with metallic electrode
App 20050282341 - Park, Dae-Gyu ; et al. | 2005-12-22 |
Polycrystalline Silicon Layer With Nano-grain Structure and Method of Manufacture
App 20050158924 - Chakravarti, Ashima B. ; et al. | 2005-07-21 |
METHOD FOR AVOIDING OXIDE UNDERCUT DURING PRE-SILICIDE CLEAN FOR THIN SPACER FETs
App 20050064635 - Ajmera, Atul C. ; et al. | 2005-03-24 |
Electron holography method
App 20040195506 - Wang, Yun-Yu ; et al. | 2004-10-07 |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
App 20040092073 - Cabral, Cyril JR. ; et al. | 2004-05-13 |
Thermally stable poly-Si/high dielectric constant material interfaces
Grant 6,573,197 - Callegari , et al. June 3, 2 | 2003-06-03 |
High mobility FETS using A1203 as a gate oxide
Grant 6,511,876 - Buchanan , et al. January 28, 2 | 2003-01-28 |
High Mobility Fets Using Al2o3 As A Gate Oxide
App 20020197789 - Buchanan, Douglas A. ; et al. | 2002-12-26 |
Thermally stable poly-Si/high dielectric constant material interfaces
App 20020151142 - Callegari, Alessandro C. ; et al. | 2002-10-17 |
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