U.S. patent application number 12/430429 was filed with the patent office on 2010-07-22 for tin-silver bonding and method thereof.
Invention is credited to Ming-Chung Kuo, Cheng-Yi LIU.
Application Number | 20100183896 12/430429 |
Document ID | / |
Family ID | 42337197 |
Filed Date | 2010-07-22 |
United States Patent
Application |
20100183896 |
Kind Code |
A1 |
LIU; Cheng-Yi ; et
al. |
July 22, 2010 |
TIN-SILVER BONDING AND METHOD THEREOF
Abstract
A Sn--Ag bonding and a method thereof are revealed. By means of
a bonding layer formed by tin and silver between wafers, the stress
released by diffusion and bonding between tin (Sn) and silver (Ag)
is larger than the stress released by diffusion and bonding of
conventional gold-silver bonding. Moreover, a Sn--Ag bonding method
of the present invention forms Sn--Ag bonding at low temperature
and releases more stress so as to reduce thermal stress generated
during wafer bonding effectively. And after wafer bonding, the high
temperature processes can be performed.
Inventors: |
LIU; Cheng-Yi; (Zhongli,
TW) ; Kuo; Ming-Chung; (Qieding Shiang, TW) |
Correspondence
Address: |
SINORICA, LLC
2275 Research Blvd., Suite 500
ROCKVILLE
MD
20850
US
|
Family ID: |
42337197 |
Appl. No.: |
12/430429 |
Filed: |
April 27, 2009 |
Current U.S.
Class: |
428/647 ;
228/205 |
Current CPC
Class: |
B23K 2101/40 20180801;
Y10T 428/12715 20150115; B23K 20/24 20130101 |
Class at
Publication: |
428/647 ;
228/205 |
International
Class: |
B32B 15/01 20060101
B32B015/01; B23K 1/20 20060101 B23K001/20; B32B 15/04 20060101
B32B015/04 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 22, 2009 |
TW |
098102526 |
Claims
1. A Sn--Ag bonding comprising: a first wafer, a first bonding
layer disposed on the first wafer and made of tin or tin alloy, a
second bonding layer bonded with the first bonding layer and made
of silver or silver alloy, and a second wafer arranged on the
second bonding layer.
2. The Sn--Ag bonding as claimed in claim 1, wherein a first
barrier layer is disposed between the first wafer and the first
bonding layer.
3. The Sn--Ag bonding as claimed in claim 2, wherein the first
barrier layer is made of titanium (Ti)/nickel (Ni) or chromium
(Cr)/platinum (Pt).
4. The Sn--Ag bonding as claimed in claim 1, wherein a second
barrier layer is disposed between the second wafer and the second
bonding layer.
5. The Sn--Ag bonding as claimed in claim 4, wherein the second
barrier layer is made of titanium (Ti)/nickel (Ni) or chromium
(Cr)/platinum (Pt).
6. The Sn--Ag bonding as claimed in claim 1, wherein the first
bonding layer and the second bonding layer are further disposed
with an interface layer.
7. The Sn--Ag bonding as claimed in claim 6, wherein the interface
layer is made of tin silver alloy.
8. A Sn--Ag bonding method comprising the steps of: providing a
first wafer and a second wafer, evaporating a first bonding layer
onto the first wafer while the first bonding layer is made of tin
or tin alloy, evaporating a second bonding layer onto the second
wafer while the second bonding layer is made of silver or silver
alloy, cleaning surfaces of the first bonding layer and the second
bonding layer, attaching the first bonding layer on the first wafer
with the second bonding layer on the second wafer and being sent to
a vacuum furnace, and heating the vacuum furnace to a certain
temperature and bonding occurring between the first bonding layer
and the second bonding layer.
9. The method as claimed in claim 8, wherein before the step of
heating the vacuum furnace to a certain temperature, the method
further comprises a step of introducing hydrogen gas and nitrogen
gas.
10. The method as claimed in claim 9, wherein the ratio of hydrogen
gas to nitrogen gas is 19:1.
11. The method as claimed in claim 8, wherein the step of
evaporating a first bonding layer onto the first wafer is run by
electron beam evaporation.
12. The method as claimed in claim 8, wherein the step of
evaporating a second bonding layer onto the second wafer is run by
electron beam evaporation.
13. The method as claimed in claim 8, wherein the step of cleaning
surfaces of the first bonding layer and the second bonding layer is
run by ultrasonic cleaning.
14. The method as claimed in claim 8, wherein the step of cleaning
surfaces of the first bonding layer and the second bonding layer
comprising the steps of: soaking the first bonding layer and the
second bonding layer into acetone solution for removing
contaminants on surfaces of the first bonding layer and the second
bonding layer; soaking the first bonding layer and the second
bonding layer into isopropyl alcohol solution for removing residual
acetone on surfaces of the first bonding layer and the second
bonding layer; soaking the first bonding layer and the second
bonding layer into deionized water for removing residual isopropyl
alcohol on surfaces of the first bonding layer and the second
bonding layer.
15. The method as claimed in claim 8, wherein bonding temperature
of the bonding occurring between the first bonding layer and the
second bonding layer ranges from 100 degrees Celsius to 300 degrees
Celsius.
16. The method as claimed in claim 8, wherein bonding time of the
bonding occurring between the first bonding layer and the second
bonding layer ranges from 30 minutes to 4 hours.
17. The method as claimed in claim 8, wherein degree of vacuum in
the vacuum furnace ranges from 10.sup.-2 torr to 10.sup.-6 torr
while bonding occurring between the first bonding layer and the
second bonding layer.
18. The method as claimed in claim 8, wherein before the step of
evaporating a first bonding layer onto the first wafer, the method
further comprises a step of: evaporating a first barrier layer onto
the first wafer.
19. The method as claimed in claim 18, wherein the first barrier
layer is made of titanium (Ti)/nickel (Ni) or chromium
(Cr)/platinum (Pt).
20. The method as claimed in claim 8, wherein before the step of
evaporating a second bonding layer onto the second wafer, the
method further comprises a step of: evaporating a second barrier
layer onto the second wafer.
21. The method as claimed in claim 20, wherein the second barrier
layer is made of titanium (Ti)/nickel (Ni) or chromium
(Cr)/platinum (Pt).
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a bonding structure and a
method thereof, especially to a Sn--Ag bonding and a method
thereof.
[0003] 2. Description of Related Art
[0004] Along with fast development of technologies, there is a
trend in electronic components to be more light, thin and compact.
A conventional single material is unable to meet these requirements
of component design. Generally, each material has it own properties
such as mobility of electron/hole, light absorbance, reflection
rate, heat Conductivity, electrical resistance, and mechanical
properties etc. However, in practice, there is no single material
with optimum effects on various physical properties. Thus in order
to achieve best photoelectric/electronic effect of
photoelectric/electronic components, the properties of different
materials must be integrated.
[0005] In early days, various materials are integrated by
heteroepitaxial technique or ion implant technique used in
manufacturing processes of integrated circuit (IC). The biggest
problem encountered by heteroepitaxial technique is lattice match.
Once the requirement of lattice match is not satisfied, the high
quality epitaxial film can't be obtained and functions of the
components are further affected. Moreover, the thickness of the
epitaxial film produced by heteroepitaxial technique is no more
than 10 .mu.m. Such way is neither efficient nor
cost-effective.
[0006] Furthermore, once ion implant is used to integrate various
materials, a transition layer with high defect density is formed
and the functions of components are affected.
[0007] Recently, an area of research that integrates various
materials has become mature. The technique is wafer bonding
technique that allows the integration of materials with lattice
mismatch by means of wafer bonding and removal processes. The main
purpose of wafer bonding is in building composite materials by
bonding different materials and the composite materials with
various properties are applied to different fields broadly. There
are different types of wafer bonding as listed below (1) direct
wafer bonding (2) anodic wafer bonding (3) low temperature wafer
bonding (4) intermediate layer wafer bonding (5) adhesive wafer
bonding . . . etc. The most common way is direct wafer bonding and
adhesive wafer bonding. The direct wafer bonding is a method to
join two same or dissimilar materials together while the adhesive
wafer bonding is a bonding approach having an intermediate layer
for bonding between two wafers.
[0008] Direct Wafer Bonding has been widely developed and has
become very attractive for a lot of applications. It is also called
Van der Waals bonding. Chemical bonds (electric dipole) are formed
between two mirror wafers or epitaxial layers with very flat
surfaces by chemical solutions. The wafers are initially quick
bonded via weak Van der Waals bonding force. Then wafer pairs are
applied with pressure and are heated. The wafer cleaning, the
pressure applied, the heated temperature and time, and other
parameters are determined according to the bonding material. Before
heating, the direct bonding relies on weak Van der Waals force. The
bonding energy obtained after heat processing is from diffusion of
atoms at the interface.
[0009] In addition, the adhesive wafer bonding includes an
intermediate bonding medium such as metal, wax, epoxy, and SOG
(spin-on-glass). Thus annealing temperature and time of wafer
bonding are reduced and the produced components are with better
properties.
[0010] Now wafer bonding technique is broadly applied to
photoelectric/electronic industries such as the improvement of
performance of photoelectric components, manufacturing and
applications of SOI (Silicon-on-insulator) chips, manufacturing and
integrations of Si Discrete Power Devices as well as MEMS (Micro
Electro Mechanical Systems) devices, and Optoelectronic Integrated
Circuits (OEIC) manufactured by integration of photoelectric
components and Ultra-Large Scale Integration (ULSI) chips. The
above description explains how the wafer bonding technique is
applied to optoelectronic components.
[0011] In order to use energy efficiently, develop high technology
and protect the earth, the high brightness white light LED has
become main point of development in solid state lighting in
developed countries. It is estimated the light efficiency of high
brightness white light LED will achieve 200 lm/W within 15 years so
that it will replace all lighting devices in our daily lives at
that time. Thus the electricity consumed by lighting equipments is
reduced 50% and the overall electricity is saved up to 10%.
Moreover, about two hundred million tons of carbon dioxide emitted
is reduced. Thus not only energy is saved but also environmental
protection is achieved.
[0012] The development of GaN based LED dramatically increases
possibility of mass production of white light LED and plays a key
role on that. Up to present, sapphire has played an important role
in the improvement of internal quantum efficiency of GaN LED along
with fast development of epitaxial technique and it also has great
effect on the external quantum efficiency. In order to make a
breakthrough, begin with packaging.
[0013] Due to low heat conductivity--40 W/moK, the poor heat
dissipation capacity of sapphire severely affects internal quantum
efficiency of GaN LED. In recent years, researchers have tried to
grow GaN on silicon substrate whose heat dissipation capacity and
conductivity are better than those of sapphire.
[0014] Besides, the wafer bonding technique can be used. The GaN
LED is bonded with substrates having better thermal conductivity by
metal bonding. The common bonding structure includes Au--Si
bonding, Au--Sn bonding and Au--Ag bonding. The bonding temperature
of the Au--Si bonding as well as the Au--Sn bonding is 363 and 282
degrees respectively while bonding temperature of the Au--Ag
bonding is low temperature--150 degrees. The present invention
provides a Sn--Ag bonding bonded at low temperature and a method
thereof that further improves component performance as compared
with Au--Ag bonding.
SUMMARY OF THE INVENTION
[0015] Therefore it is a primary object of the present invention to
provide a Sn--Ag bonding structure without problems of thermal
stress caused by different coefficients of thermal expansion of
wafers.
[0016] It is another object of the present invention to provide a
Sn--Ag bonding structure that bonds wafers at low temperature,
effectively reduce stress generated during wafer bonding, and
favors high temperature processes that follow the wafer
bonding.
[0017] In order to achieve above objects, a Sn--Ag bonding of the
present invention consists of a first wafer, a first bonding layer,
a second bonding layer, and a second wafer. The first bonding layer
is disposed on the first wafer and material of the first bonding
layer is tin or tin alloy. The second bonding layer is arranged on
the second wafer and material of the second bonding layer is silver
or silver alloy.
[0018] A Sn--Ag bonding method of the present invention includes a
plurality of steps. A first wafer and a second wafer are provided.
Then a first bonding layer is formed on the first wafer by
evaporation and the first bonding layer is made of tin or tin
alloy. Simultaneously evaporate a second bonding layer onto the
second wafer and the second bonding layer is made of silver or
silver alloy. Next clean surfaces of the first bonding layer and
the second bonding layer. The first bonding layer on the first
wafer is attached with the second bonding layer on the second wafer
and send them into a vacuum furnace. At last, the vacuum furnace is
heated up to a certain temperature so that bonding occurs between
the first bonding layer and the second bonding layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The structure and the technical means adopted by the present
invention to achieve the above and other objects can be best
understood by referring to the following detailed description of
the preferred embodiments and the accompanying drawings,
wherein
[0020] FIG. 1 is a schematic drawing showing structure of an
embodiment according to the present invention;
[0021] FIG. 2 is a flow chart of an embodiment according to the
present invention;
[0022] FIG. 3 is a flow chart of another embodiment according to
the present invention;
[0023] FIG. 4 is a schematic drawing showing structure of another
embodiment according to the present invention;
[0024] FIG. 5 is a schematic drawing showing structure of a further
embodiment according to the present invention;
[0025] FIG. 6 is a flow chart of a further embodiment according to
the present invention;
[0026] FIG. 7 is an electron microscopic image of an embodiment
according to the present invention;
[0027] FIG. 8 is a Raman spectra of an embodiment according to the
present invention; and
[0028] FIG. 9 shows released stress of an embodiment according to
the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0029] Refer to FIG. 1, an embodiment of the present invention
shows a Sn--Ag bonding structure. The Sn--Ag bonding 1 includes a
first wafer 10, a first bonding layer 12, a second bonding layer 14
and a second wafer 16. The first bonding layer 12 is disposed on
the first wafer 10 and the first bonding layer 12 is made of tin or
tin alloy. The second bonding layer 14 is arranged on the second
wafer 16 and the second bonding layer 14 is made of silver or
silver alloy. The above first wafer 10 as well as the second wafer
16 is made of compounds, semiconductor or metal.
[0030] Refer to FIG. 2, a flow chart of an embodiment according to
the present invention is revealed. As shown in figure, a Sn--Ag
bonding method of the present invention is a method to form a
Sn--Ag bonding. Firstly, run the step S10. Provide a first wafer 10
and a second wafer 16. Then take the step S12, a first bonding
layer 12 is formed on the first wafer 10 by evaporation. At the
same time, run the step S14, evaporate a second bonding layer 14
onto a second wafer 16. In the step S12 and the step S14, the
evaporation of the first bonding layer 12 on the first wafer 10 as
well as the evaporation of the second bonding layer 14 onto the
second wafer 16 is accomplished in several ways. In this
embodiment, it's by electron beam evaporation while some other ways
of evaporation can also be used.
[0031] After the first bonding layer 12 coated on the first wafer
10 and the second bonding layer 14 coated on the second wafer 16,
take the step S16. Clean the first bonding layer 12 coated on the
first wafer 10 as well as the second bonding layer 14 coated on the
second wafer 16. There are various ways of cleaning such as gas
cleaning, cleaning by chemical solutions or high energy particles.
In this embodiment, an ultrasonic cleaner is used to clean surfaces
of the first bonding layer 12 and the second bonding layer 14. The
cleaning process further includes the following steps:
with reference of FIG. 3, run the step S161 first. Soak the first
bonding layer 12 coated on the first wafer 10 and the second
bonding layer 14 coated on the second wafer 16 into an ultrasonic
cleaner (vibrator) filled with acetone solution. The acetone
solution removes contaminants from surfaces of the first bonding
layer 12 as well as the second bonding layer 14. For example, the
contaminants are oxides, dust or other materials attached on
surfaces of the e first bonding layer 12 as well as the second
bonding layer 14. Next run the step S163, after the contaminants
being cleaned by acetone solution, the first wafer 10 coated with
the first bonding layer 12 and the second wafer 16 coated with the
second bonding layer 14 are taken out of the acetone solution to be
soaked into an ultrasonic cleaner having isopropyl alcohol
solution. The isopropyl alcohol solution dissolves residual acetone
on surfaces of the first bonding layer 12 and the second bonding
layer 14. At last, take the step S165, after removing residual
acetone on surfaces of the first bonding layer 12 and the second
bonding layer 14, take the first bonding layer 12 coated on the
first wafer 10 and the second bonding layer 14 coated on the second
wafer 16 out of the isopropyl alcohol solution and soak them into
an ultrasonic cleaner with deionized water. The residual isopropyl
alcohol solution on surfaces of the first bonding layer 12 and the
second bonding layer 14 is dissolved in deionized water. After
removing residual isopropyl alcohol solution on surfaces of the
first bonding layer 12 and the second bonding layer 14, the
cleaning of the surfaces of the first bonding layer 12 as well as
the second bonding layer 14 is finished.
[0032] After finishing cleaning of the surfaces of the first
bonding layer 12 as well as the second bonding layer 14, run the
step S18, back to FIG. 2, the first bonding layer 12 coated on the
first wafer 10 and second bonding layer 14 on the second wafer 16
are attached to each other and sent into a vacuum furnace. Then run
the step S19, the vacuum furnace is heated between 100 degrees
Celsius and 300 degrees Celsius so as to heat the first bonding
layer 12 and the second bonding layer 14 to make them bond with
each other. The degree of vacuum in the vacuum furnace keeps
between from 10.sup.-2 torr to 10.sup.-6 torr. The bonding time of
the first bonding layer 12 and the second bonding layer 14 ranges
from 30 minutes to 4 hours. Besides bonding under vacuum
conditions, hydrogen gas and nitrogen gas are further introduced
while the ratio of hydrogen gas to nitrogen gas is 19:1.
[0033] Refer to FIG. 4, while the first bonding layer 12 and the
second bonding layer 14 are bonding with each other, an interface
layer 18 is generated between the first bonding layer 12 and the
second bonding layer 14. The first bonding layer 12 is made of tin
or tin alloy while the second bonding layer 14 is made of silver or
silver alloy. Thus the interface layer 18 is formed by diffusion of
material of the first bonding layer 12 toward material of the
second bonding layer 14. The interface layer 18 is made of tin
silver alloy.
[0034] Refer to FIG. 5, another embodiment of the present invention
is disclosed. As shown in figure, a Sn--Ag bonding 1 consists of a
first wafer 10, a first barrier layer 11, a first bonding layer 12,
a second bonding layer 14, a second barrier layer 15 and a second
wafer 16. The first barrier layer 11 as well as the second barrier
layer 15 is respectively arranged on the first wafer 10 and the
second wafer 16 while the first bonding layer 12 and the second
bonding layer 14 are disposed on the first barrier layer 11 and the
second barrier layer 15 respectively. The material of the first
bonding layer 12 is tin or tin alloy while the material of the
second bonding layer 14 is silver or silver alloy. The first
barrier layer 11 is to prevent diffusion of the two layers--the
first bonding layer 12 and the first wafer 10. Similarly, the
second barrier layer 15 is to prevent diffusion between the second
bonding layer 14 and the second wafer 16. The material of the first
barrier layer 11 as well as the second barrier layer 15 is selected
from titanium (Ti)/nickel (Ni) or chromium (Cr)/platinum (Pt). The
material of the first wafer 10 as well as the second wafer 16 is
compound, semiconductor or metal.
[0035] Refer to FIG. 6, a flow chart of a further embodiment is
disclosed. A Sn--Ag bonding method to form a Sn--Ag bonding of the
present invention includes the following steps: firstly, run the
step S10, provide a first wafer 10 and a second wafer 16. Then take
the step S12, evaporate a first barrier layer 11 onto a first wafer
10. Refer to step S13, a first bonding layer 12 is formed on the
first barrier layer 11 by evaporation. At the same time, take the
step S14, evaporate a second barrier layer 15 onto the second wafer
16. Next take the step S15, evaporate a second bonding layer 14
onto the second barrier layer 15. In the steps S12, S13, S14 and
S15, the evaporation is accomplished in several ways. In this
embodiment, it's by electron beam evaporation while some other ways
of evaporation can also be used.
[0036] After finishing above steps, take the step S16, clean
surfaces of the first bonding layer 12 and the second bonding layer
14. There are various ways of cleaning such as gas cleaning,
cleaning by chemical solutions or high energy particles, the same
with the embodiment in FIG. 2.
[0037] After finishing cleaning surfaces of the first bonding layer
12 and the second bonding layer 14, take the step S18. Attach the
first bonding layer 12 with the second bonding layer 14 and then
send them into a vacuum furnace. Refer to step S19, introduce
hydrogen gas and nitrogen gas into the vacuum furnace and heat up
to 100-300 degrees Celsius. The first bonding layer 12 and the
second bonding layer 14 are heated so as to make bonding occur. The
ratio of hydrogen gas to nitrogen gas is 19:1. And the bonding time
of the first bonding layer 12 with the second bonding layer 14
ranges from 30 minutes to 4 hours.
[0038] It is learned from the above FIG. 4 that an interface layer
18 is generated between the first bonding layer 12 and the second
bonding layer 14 while bonding occurring between the first bonding
layer 12 and the second bonding layer 14.
[0039] Refer to FIG. 7, an image of an embodiment from an electron
microscope is revealed. The Sn--Ag bonding structure of the present
invention mainly includes a first wafer 10, a copper layer, a tin
layer, a silver layer and a second wafer 16. The copper layer is
coated on the first wafer. The tin layer is deposit on the copper
layer while the silver layer is coated on the second wafer. The
copper layer and the tin layer are equal to the first bonding layer
12 of the above embodiment. The silver layer is equal to the second
bonding layer 14 of the above embodiment. Bonding occurs between
the tin layer and the silver layer so as to obtain Sn--Ag bonding
structure. When the tin layer and the silver layer are bonded at
150 degrees Celsius, the Sn--Ag bonding structure is generated
after 30 minutes (bonding time). Now the Sn--Ag bonding structure
is observed by the electron microscope and a cross sectional view
of the Sn--Ag bonding structure is obtained. It is found that a
first interface layer 18a is generated between the tin layer and
the silver layer and the first interface layer 18a is Ag.sub.3Sn
while a second interface layer 18b is generated between the tin
layer and the silver layer and the second interface layer 18b is
Cu.sub.6Sn.sub.5.
[0040] Refer to FIG. 8 & FIG. 9, Raman spectra and stress
released of an embodiment are revealed. As shown in figure, Raman
shift of the Sn--Ag bonding structure in FIG. 6 is located on the
left side of Raman shift of the Au--Ag bonding. This means the
stress released by the Sn--Ag bonding is larger than that released
by the Au--Ag bonding. Both the value of Raman shift of the Sn--Ag
bonding and the value of Raman shift of the Au--Ag bonding are
placed into Kozawa's equation so as to get a value of stress
released by the Sn--Ag bonding and a value of stress released by
the Au--Ag bonding. The result shows that the value of stress
released by the Sn--Ag bonding is far more larger than the value of
stress released by the Au--Ag bonding. Thus it is learned that a
Sn--Ag bonding and a method thereof according to the present
invention release stress generated during wafer bonding
effectively. The thermal stress caused by large difference in
coefficient of thermal expansion between wafers can be avoided and
this favors high temperature processes after the wafer bonding.
[0041] In summary, the present invention provides a Sn/Ag bonding
and a method thereof in which a wafer bonding is run at low
temperature--100 degrees Celsius. By the bonding layer having tin
and solver between wafers, more stress is released so as to reduce
problems caused by thermal stress generated during wafer bonding
effectively. And this also favors high temperature processes that
follow the wafer bonding.
[0042] Additional advantages and modifications will readily occur
to those skilled in the art. Therefore, the invention in its
broader aspects is not limited to the specific details, and
representative devices shown and described herein. Accordingly,
various modifications may be made without departing from the spirit
or scope of the general inventive concept as defined by the
appended claims and their equivalents.
* * * * *