U.S. patent application number 12/192457 was filed with the patent office on 2010-02-18 for method for fabricating carbon nanotube transistors on a silicon or soi substrate.
This patent application is currently assigned to TEXAS INSTRUMENTS INCORPORATED. Invention is credited to Andrew Marshall, Ashesh Parikh.
Application Number | 20100038627 12/192457 |
Document ID | / |
Family ID | 41680673 |
Filed Date | 2010-02-18 |
United States Patent
Application |
20100038627 |
Kind Code |
A1 |
Parikh; Ashesh ; et
al. |
February 18, 2010 |
METHOD FOR FABRICATING CARBON NANOTUBE TRANSISTORS ON A SILICON OR
SOI SUBSTRATE
Abstract
A method of forming a single wall thickness (SWT) carbon
nanotube (CNT) transistor with a controlled diameter and chirality
is disclosed. A photolithographically defined single crystal
silicon seed layer is converted to a single crystal silicon carbide
seed layer. A single layer of graphene is formed on the top surface
of the silicon carbide. The SWT CNT transistor body is grown from
the graphene layer in the presence of carbon containing gases and
metal catalyst atoms. Silicided source and drain regions at each
end of the silicon carbide seed layer provide catalyst metal atoms
during formation of the CNT. The diameter of the SWT CNT is
established by the width of the patterned seed layer. A conformally
deposited gate dielectric layer and a transistor gate over the gate
dielectric layer complete the CNT transistor. CNT transistors with
multiple CNT bodies, split gates and varying diameters are also
disclosed.
Inventors: |
Parikh; Ashesh; (Frisco,
TX) ; Marshall; Andrew; (Dallas, TX) |
Correspondence
Address: |
TEXAS INSTRUMENTS INCORPORATED
P O BOX 655474, M/S 3999
DALLAS
TX
75265
US
|
Assignee: |
TEXAS INSTRUMENTS
INCORPORATED
|
Family ID: |
41680673 |
Appl. No.: |
12/192457 |
Filed: |
August 15, 2008 |
Current U.S.
Class: |
257/24 ;
257/E29.069; 977/762 |
Current CPC
Class: |
Y10S 977/938 20130101;
H01L 51/0541 20130101; Y10S 977/842 20130101; H01L 51/0002
20130101; B82Y 10/00 20130101; H01L 51/0048 20130101; H01L 51/055
20130101; Y10S 977/845 20130101 |
Class at
Publication: |
257/24 ;
257/E29.069; 977/762 |
International
Class: |
H01L 29/12 20060101
H01L029/12 |
Claims
1. A single wall thickness (SWT) carbon nanotube (CNT) transistor,
comprising: a patterned seed layer comprising single crystal
silicon carbide formed on a top surface of an isolating layer; a
first silicided source/drain region formed at a first end of said
silicon carbide seed layer; a second silicided source/drain region
formed at a second end of said silicon carbide seed layer; an SWT
CNT transistor body formed on a top surface of said silicon carbide
seed layer; a gate dielectric layer formed on an exterior surface
of said SWT CNT transistor body; and a transistor gate formed on a
surface of said gate dielectric layer over said SWT CNT transistor
body.
2. The SWT CNT transistor of claim 1, further comprising: a second
patterned single crystal silicon carbide seed layer formed on said
top surface of said isolation layer, adjacent to said first silicon
carbide seed layer, such that a first end of said second silicon
carbide seed layer contacts said first silicided source/drain
region and a second end of said second silicon carbide seed layer
contacts said second silicided source/drain region; and a second
SWT CNT transistor body formed on a top surface of said second
silicon carbide seed layer; and in which: said gate dielectric
layer is formed on an exterior surface of said second SWT CNT
transistor body in a manner such that said gate dielectric layer
bridges a gap between said first SWT CNT transistor body and said
second SWT CNT transistor body; and said transistor gate overlaps
said second SWT CNT transistor body.
3. The SWT CNT transistor of claim 1, further comprising: a second
patterned single crystal silicon carbide seed layer formed on said
top surface of said isolation layer, such that a first end of said
second silicon carbide seed layer contacts said first silicided
source/drain region and a second end of said second silicon carbide
seed layer contacts said second silicided source/drain region; and
a second SWT CNT transistor body formed on a top surface of said
second silicon carbide seed layer; and in which: said gate
dielectric layer contacts more than three-fourths of said exterior
surface of said first SWT CNT transistor body; said gate dielectric
layer is formed on an exterior surface of said second SWT CNT
transistor body in a manner such that said gate dielectric layer
contacts more than three-fourths of said exterior surface of said
second SWT CNT transistor body; said transistor gate overlaps more
than three-fourths of said exterior surface of said first SWT CNT
transistor body; and said transistor gate overlaps more than
three-fourths of said exterior surface of said second SWT CNT
transistor body.
4. The SWT CNT transistor of claim 1, further comprising a second
transistor gate, distinct from said first transistor gate, formed
on said surface of said gate dielectric layer over said SWT CNT
transistor body.
5. The SWT CNT transistor of claim 4, further comprising: a second
patterned single crystal silicon carbide seed layer formed on said
top surface of said isolation layer; a third silicided source/drain
region formed at a first end of said second silicon carbide seed
layer; a fourth silicided source/drain region formed at a second
end of said second silicon carbide seed layer; a second SWT CNT
transistor body formed on a top surface of said second silicon
carbide seed layer; a second gate dielectric layer formed on an
exterior surface of said second SWT CNT transistor body; and a
third transistor gate, distinct from said first transistor gate and
from said second transistor gate, formed on a surface of said
second gate dielectric layer over said second SWT CNT transistor
body; and in which said second transistor gate is formed on said
surface of said second gate dielectric layer over said second SWT
CNT transistor body.
6. The SWT CNT transistor of claim 1, wherein said SWT CNT
transistor body is n-type.
7. The SWT CNT transistor of claim 1, wherein said SWT CNT
transistor body is p-type.
8. An integrated circuit, comprising: an SWT CNT transistor,
further comprising: a patterned seed layer comprising single
crystal silicon carbide formed on a top surface of an isolating
layer; a first silicided source/drain region formed at a first end
of said silicon carbide seed layer; a second silicided source/drain
region formed at a second end of said silicon carbide seed layer;
an SWT CNT transistor body formed on a top surface of said silicon
carbide seed layer; a gate dielectric layer formed on an exterior
surface of said SWT CNT transistor body; and a transistor gate
formed on a surface of said gate dielectric layer over said SWT CNT
transistor body.
9. The integrated circuit of claim 8, in which: said SWT CNT
transistor further comprises: a second patterned single crystal
silicon carbide seed layer formed on said top surface of said
isolation layer, adjacent to said first silicon carbide seed layer,
such that a first end of said second silicon carbide seed layer
contacts said first silicided source/drain region and a second end
of said second silicon carbide seed layer contacts said second
silicided source/drain region; and a second SWT CNT transistor body
formed on a top surface of said second silicon carbide seed layer;
said gate dielectric layer is formed on an exterior surface of said
second SWT CNT transistor body in a manner such that said gate
dielectric layer bridges a gap between said first SWT CNT
transistor body and said second SWT CNT transistor body; and said
transistor gate overlaps said second SWT CNT transistor body.
10. The integrated circuit of claim 8, in which: said SWT CNT
transistor further comprises: a second patterned single crystal
silicon carbide seed layer formed on said top surface of said
isolation layer, such that a first end of said second silicon
carbide seed layer contacts said first silicided source/drain
region and a second end of said second silicon carbide seed layer
contacts said second silicided source/drain region; and a second
SWT CNT transistor body formed on a top surface of said second
silicon carbide seed layer; said gate dielectric layer contacts
more than three-fourths of said exterior surface of said first SWT
CNT transistor body; said gate dielectric layer is formed on an
exterior surface of said second SWT CNT transistor body in a manner
such that said gate dielectric layer contacts more than
three-fourths of said exterior surface of said second SWT CNT
transistor body; said transistor gate overlaps more than
three-fourths of said exterior surface of said first SWT CNT
transistor body; and said transistor gate overlaps more than
three-fourths of said exterior surface of said second SWT CNT
transistor body.
11. The integrated circuit of claim 8, in which said SWT CNT
transistor further comprises a second transistor gate, distinct
from said first transistor gate, formed on said surface of said
gate dielectric layer over said SWT CNT transistor body.
12. The integrated circuit of claim 11, in which: said SWT CNT
transistor further comprises: a second patterned single crystal
silicon carbide seed layer formed on said top surface of said
isolation layer; a third silicided source/drain region formed at a
first end of said second silicon carbide seed layer; a fourth
silicided source/drain region formed at a second end of said second
silicon carbide seed layer; a second SWT CNT transistor body formed
on a top surface of said second silicon carbide seed layer; a
second gate dielectric layer formed on an exterior surface of said
second SWT CNT transistor body; and a third transistor gate,
distinct from said first transistor gate and from said second
transistor gate, formed on a surface of said second gate dielectric
layer over said second SWT CNT transistor body; and said second
transistor gate is formed on said surface of said second gate
dielectric layer over said second SWT CNT transistor body.
13. The integrated circuit of claim 8, further comprising a second
SWT CNT transistor, further comprising: a second patterned seed
layer comprising single crystal silicon carbide formed on said top
surface of said isolating layer; a third silicided source/drain
region formed at a first end of said second silicon carbide seed
layer; a fourth silicided source/drain region formed at a second
end of said second silicon carbide seed layer; a second SWT CNT
transistor body formed on a top surface of said second silicon
carbide seed layer, wherein a conductivity type of said second SWT
CNT transistor body is different than a conductivity type of said
first SWT CNT transistor body; a second gate dielectric layer
formed on an exterior surface of said second CNT transistor body;
and a second transistor gate formed on a surface of said second
gate dielectric layer over said second CNT transistor body.
14. The integrated circuit of claim 8, further comprising a second
SWT CNT transistor, further comprising: a second patterned single
crystal silicon carbide seed layer formed on said top surface of
said isolation layer, wherein a width of said second patterned
silicon carbide seed layer is significantly different from a width
of said first patterned silicon carbide seed layer; a third
silicided source/drain region formed at a first end of said second
silicon carbide seed layer; a fourth silicided source/drain region
formed at a second end of said second silicon carbide seed layer; a
second SWT CNT transistor body formed on a top surface of said
second silicon carbide seed layer, wherein a diameter of said
second SWT CNT transistor body is significantly different from a
diameter of said first SWT CNT transistor body; a second gate
dielectric layer formed on an exterior surface of said second SWT
CNT transistor body; and a second transistor gate formed on a
surface of said second gate dielectric layer over said second SWT
CNT transistor body.
15. A method of forming an integrated circuit, comprising the steps
of: forming an SWT CNT transistor, by a process further comprising
the steps of: forming a patterned seed layer comprising single
crystal silicon on a top surface of an isolating layer; forming a
first silicided source/drain regions at a first end of said silicon
seed layer; forming a second silicided source/drain regions at a
second end of said silicon seed layer; converting said silicon seed
layer to a single crystal silicon carbide seed layer; forming an
SWT CNT transistor body on a top surface of said silicon carbide
seed layer by a process further comprising the steps of: forming a
single layer of graphene on a top surface of said silicon carbide
seed layer; and forming a CNT transistor body from said graphene
layer by heating said graphene layer between 1100 C and 1400 C
while exposing said graphene layer to carbon containing gases;
forming a gate dielectric layer on an exterior surface of said SWT
CNT transistor body; and forming a transistor gate on a surface of
said gate dielectric layer over said SWT CNT transistor body.
16. The method of claim 15, in which: said step of forming said SWT
CNT transistor further comprises the steps of: forming a second
patterned single crystal silicon seed layer on said top surface of
said isolation layer, adjacent to said first silicon seed layer, in
a manner such that a first end of said second silicon seed layer
contacts said first silicided source/drain region and a second end
of said second silicon seed layer contacts said second silicided
source/drain region; converting said second silicon seed layer to a
second single crystal silicon carbide seed layer; and forming a
second SWT CNT transistor body on a top surface of said second
silicon carbide seed layer; said step of forming said gate
dielectric layer is performed such that said gate dielectric layer
contacts an exterior surface of said second SWT CNT transistor body
and bridges a gap between said first SWT CNT transistor body and
said second SWT CNT transistor body; and said step of forming said
transistor gate is performed such that said transistor gate
overlaps said second SWT CNT transistor body.
17. The method of claim 15, in which: said step of forming a SWT
CNT transistor further comprises the steps of: forming a second
patterned single crystal silicon seed layer on said top surface of
said isolation layer, such that a first end of said second silicon
seed layer contacts said first silicided source/drain region and a
second end of said second silicon seed layer contacts said second
silicided source/drain region; converting said second silicon seed
layer to a second single crystal silicon carbide seed layer; and
forming a second SWT CNT transistor body on a top surface of said
second silicon carbide seed layer; said step of forming said gate
dielectric layer is performed in a manner such that said gate
dielectric layer contacts more than three-fourths of said exterior
surface of said first SWT CNT transistor body; said step of forming
said gate dielectric layer is performed in a manner such that said
gate dielectric layer contacts more than three-fourths of an
exterior surface of said second SWT CNT transistor body; said step
of forming said transistor gate is performed in a manner such that
said transistor gate overlaps more than three-fourths of said
exterior surface of said first SWT CNT transistor body; and said
step of forming said transistor gate is performed in a manner such
that said transistor gate overlaps more than three-fourths of said
exterior surface of said second SWT CNT transistor body.
18. The method of claim 15, further comprising the step of forming
a second transistor gate, distinct from said first transistor gate,
on said surface of said gate dielectric layer over said SWT CNT
transistor body.
19. The method of claim 18, in which: said step of forming said SWT
CNT transistor further comprises the steps of: forming a second
patterned single crystal silicon seed layer on said top surface of
said isolation layer; forming a third silicided source/drain region
at a first end of said second silicon seed layer; forming a fourth
silicided source/drain region at a second end of said second
silicon seed layer; converting said second silicon seed layer to a
second single crystal silicon carbide seed layer; forming a second
SWT CNT transistor body on a top surface of said second silicon
carbide seed layer; forming a second gate dielectric layer on an
exterior surface of said second SWT CNT transistor body; and
forming a third transistor gate, distinct from said first
transistor gate and from said second transistor gate, on a surface
of said second gate dielectric layer over said second SWT CNT
transistor body; and said step of forming said second transistor
gate is performed in a manner such that said second transistor gate
contacts said surface of said second gate dielectric layer over
said second SWT CNT transistor body.
20. The method of claim 15, further comprising the step of forming
a second SWT CNT transistor, further comprising the steps of:
forming a second patterned single crystal silicon seed layer on
said top surface of said isolation layer, wherein a width of said
second patterned silicon seed layer is significantly different from
a width of said first patterned silicon seed layer; forming a third
silicided source/drain region at a first end of said second silicon
seed layer; forming a fourth silicided source/drain region at a
second end of said second silicon seed layer; converting said
second silicon seed layer to a second single crystal silicon
carbide seed layer; forming a second SWT CNT transistor body on a
top surface of said second silicon carbide seed layer, wherein a
diameter of said second SWT CNT transistor body is significantly
different from a diameter of said first SWT CNT transistor body;
forming a second gate dielectric layer on an exterior surface of
said second SWT CNT transistor body; and forming a second
transistor gate on a surface of said second gate dielectric layer
over said second SWT CNT transistor body.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This invention relates to application Ser. No. 12/015,358,
filed Jan. 16, 2008.
FIELD OF THE INVENTION
[0002] This invention relates to the field of integrated circuits.
More particularly, this invention relates to methods to fabricate
carbon nanotube transistors in integrated circuits.
BACKGROUND OF THE INVENTION
[0003] Carbon nanotube (CNT) transistors may exhibit desirable
properties, including fast switching speeds. Integrating CNT
transistors in integrated circuits (ICs) has been problematic, in
part due to difficulty controlling the diameter and chirality of
the CNT used to form the transistor body. Chirality, the alignment
of the carbon hexagons in the CNT, affects transport properties of
charge carriers in the CNT transistor. The CNT diameter also
affects charge transport parameters of the CNT transistor, as well
as IC fabrication cost and complexity.
SUMMARY OF THE INVENTION
[0004] This Summary is provided to comply with 37 C.F.R.
.sctn.1.73, requiring a summary of the invention briefly indicating
the nature and substance of the invention. It is submitted with the
understanding that it will not be used to interpret or limit the
scope or meaning of the claims.
[0005] The instant invention provides a method of forming single
wall thickness (SWT) carbon nanotube (CNT) transistors in
integrated circuits (ICs). An area of thin single crystal silicon
on an isolation layer is patterned and etched to produce a single
crystal silicon seed layer. Thicker source and drain regions at
each end of the silicon seed layer are silicided. The silicon seed
layer is converted to single crystal silicon carbide by known
methods. A single layer of graphene is formed on the top surface of
the silicon carbide seed layer by removing silicon using ablation,
thermal desorption or other methods. The IC is then heated whiled
being exposed to carbon containing gases and catalytic metals so as
to extend the graphene layer at its lateral edges, forming an SWT
CNT on the silicon carbide seed layer. Metal atoms from the
silicided source/drain regions act advantageously as a catalyst for
formation of the CNT. A gate dielectric layer is deposited on the
CNT body element, followed by formation of a transistor gate on a
top surface of the gate dielectric layer.
[0006] The inventive CNT transistor may be formed with one or more
CNT elements forming the body of the transistor. The CNT body
elements may be closely spaced, providing a planar gate structure,
or widely spaced so that the gate controls a larger portion of the
CNT periphery. The gate may be split to provide a more versatile
CNT transistor for logic gate layouts or analog circuits.
Transistor performance parameters such as on-state drive current,
off-state leakage current and threshold voltage are functions of
the diameters of the CNT transistor body. Separate transistors with
different diameters of CNT body elements may fabricated
concurrently in the IC.
[0007] An advantage of the instant invention is that a diameter and
chirality of the CNT transistor body is established by a width and
crystal orientation of the silicon seed layer. Transistor
performance parameters such as bandgap and threshold are functions
of the CNT diameter and chirality, so the capability of forming CNT
with varying diameters desirably enables transistors of varying
performance parameters to be formed concurrently in an IC, without
adding fabrication cost or complexity.
DESCRIPTION OF THE VIEWS OF THE DRAWING
[0008] FIG. 1A through FIG. 1J are cutaway perspectives of an IC
containing a CNT transistor formed according to a first embodiment
of the instant invention, depicted in successive stages of
fabrication.
[0009] FIG. 2 is a cross-section of an IC containing a second
embodiment of the CNT transistor.
[0010] FIG. 3 is a cross-section of an IC containing a third
embodiment of the CNT transistor.
[0011] FIG. 4A through FIG. 4D are cross-sections of an IC
containing a split gate CNT transistor in a fourth embodiment of
the instant invention, depicted in successive stages of
fabrication.
[0012] FIG. 5 is a cross-section of an IC containing a dual body
split gate CNT transistor formed according to a fifth embodiment of
the instant invention.
[0013] FIG. 6 is a cross-section of an IC containing two CNT
transistors with different diameter bodies, formed according to the
instant invention.
DETAILED DESCRIPTION
[0014] The present invention is described with reference to the
attached figures, wherein like reference numerals are used
throughout the figures to designate similar or equivalent elements.
The figures are not drawn to scale and they are provided merely to
illustrate the invention. Several aspects of the invention are
described below with reference to example applications for
illustration. It should be understood that numerous specific
details, relationships, and methods are set forth to provide a full
understanding of the invention. One skilled in the relevant art,
however, will readily recognize that the invention can be practiced
without one or more of the specific details or with other methods.
In other instances, well-known structures or operations are not
shown in detail to avoid obscuring the invention. The present
invention is not limited by the illustrated ordering of acts or
events, as some acts may occur in different orders and/or
concurrently with other acts or events. Furthermore, not all
illustrated acts or events are required to implement a methodology
in accordance with the present invention.
[0015] The instant invention provides a method of forming a carbon
nanotube (CNT) transistor in an integrated circuit (IC) in which a
patterned seed layer of single crystal silicon is formed in an area
defined for a CNT transistor body. Source and drain regions at each
end of the area defined for the CNT transistor body are silicided,
providing catalyst metal for formation of the CNT. The single
crystal silicon seed layer is converted to single crystal silicon
carbide by known methods such as exposing the silicon seed layer to
heat and a gaseous source of carbon. In a further process step, a
single layer of graphene, which is a one-atom-thick planar sheet of
sp.sup.2-bonded carbon atoms that are densely packed in a honeycomb
crystal lattice, is formed on the top surface of the silicon
carbide seed layer by known methods, possibly including removing
silicon from a top region of the silicon carbide using ablation,
thermal desorption or other methods. The SWT CNT is subsequently
formed by heating the IC while exposing the graphene to carbon
containing gases and catalytic metals so as to extend the graphene
layer at its lateral edges, forming the SWT CNT on the silicon
carbide seed layer. A diameter of the SWT CNT is substantially
established by a width of the silicon carbide seed layer, and a
chirality of the SWT CNT, which is an alignment of hexagonal cells
in the graphene honeycomb around a perimeter of the SWT CNT, is
substantially established by a crystal orientation of the silicon
carbide seed layer. Metal atoms from the silicided source/drain
regions act advantageously as a catalyst for formation of the CNT.
A diameter and chirality of the SWT CNT are established by a width
and orientation of the silicon carbide seed layer. A conductivity
type of the CNT, that is n-type or p-type, may be established by
known methods during subsequent processing. A gate dielectric layer
is deposited on the CNT body element, followed by formation of a
transistor gate on a top surface of the gate dielectric layer.
[0016] The inventive CNT transistor may be formed with one or more
CNT elements forming the body of the transistor. The CNT body
elements may be closely spaced, providing a planar gate structure,
or widely spaced so that the gate controls a larger portion of the
CNT periphery. The gate may be split to provide a more versatile
CNT transistor for logic gate layouts or analog circuits. More than
one diameter of CNT body element may fabricated concurrently in the
IC.
[0017] FIG. 1A through FIG. 1J are cutaway perspectives of an IC
containing a CNT transistor formed according to a first embodiment
of the instant invention, depicted in successive stages of
fabrication. Referring to FIG. 1A, the IC (100) is formed on a
substrate (102) which may be a silicon-on-insulator (SOI) wafer, as
depicted in FIG. 1A, a single crystal silicon substrate, or other
semiconductor substrate appropriate for fabrication of the IC
(100). An isolation layer (104), which may be a layer of silicon
dioxide in an SOI wafer, or an implanted layer in a single crystal
silicon substrate, underlies a single crystal silicon layer (106)
which is preferably between 100 and 300 nanometers thick. A layer
of silicide block dielectric (108), preferably silicon nitride
between 10 and 50 nanometers thick, but possibly silicon dioxide or
other material, is formed on a top surface of the single crystal
silicon layer (106) by known deposition methods, including low
pressure chemical vapor deposition (LPCVD) and plasma enhanced
chemical vapor deposition (PECVD). A source/drain area (110) is
defined by a source/drain photoresist pattern, not shown in FIG. 1A
for clarity, and silicide block material is removed from the
source/drain area (110) by known dielectric etching methods, to
expose the single crystal silicon layer (106). A second
source/drain area is defined opposite the first source/drain area
(110) across the cross-section plane of FIG. 1A, and is not shown
in FIG. 1A for clarity.
[0018] FIG. 1B depicts the IC (100) after deposition of a metal
layer (112), with an optional cap layer, not shown in FIG. 1B for
clarity, to provide a source of metal for formation of metal
silicide in a subsequent fabrication step. The metal layer (112) is
preferably nickel, but is possibly cobalt, titanium or platinum, or
other metal capable of forming a metal silicide with desired
electrical and CNT catalytic properties, preferably between 150 and
500 nanometer thick. The metal layer is preferably deposited in a
conformal manner using known metal deposition methods, such as
sputtering, to provide substantially complete coverage of the
exposed single crystal silicon layer (106) in the source/drain area
(110).
[0019] FIG. 1C depicts the IC (100) after a metal silicide
formation process in which the IC (100) is heated to react the
metal depicted in FIG. 1B with exposed silicon in the single
crystal silicon layer (106) to form a metal silicide, for example,
nickel silicide, using known metal silicide methods. Details of the
metal silicide formation process vary considerably with the type of
metal used. Unreacted metal, for example, unreacted nickel, is
removed from the IC (100) by known metal removal methods, such as
etching the unreacted metal in a mixture of sulfuric acid and
hydrogen peroxide. The silicide block layer is removed from the IC
(100), to leave a silicided source/drain region (114) in the
source/drain area, preferably extending to the isolation layer
(104).
[0020] FIG. 1D depicts the IC (100) after a silicon etch process
which removes most of the exposed silicon in the single crystal
silicon layer (106) around the silicided source/drain region (114).
A silicon etch photoresist pattern (116) formed on a top surface of
the silicided source/drain region (114) prevents etching of the
silicided source/drain region (114) during the silicon etch
process. A thickness of exposed silicon in the single crystal
silicon layer (106) remaining on the isolation layer (104) is
preferably 1 to 3 nanometers, but may be more in other embodiments.
The silicon etch photoresist pattern (116) is removed prior to
subsequent processing, using known photoresist removal methods,
possibly including exposing the IC (100) to an oxygen containing
plasma, followed by a wet cleanup to remove any organic residue
from the top surface of the silicided source/drain region
(114).
[0021] FIG. 1E depicts the IC (100) during a process sequence to
define a single crystal silicon seed layer for a CNT. A CNT seed
layer photoresist pattern (118) is formed on a top surface of the
exposed silicon in the single crystal silicon layer in an area
defined for a CNT seed layer, and possibly on the top surface of
the silicided source/drain region (114). A silicon etch process is
performed which removes exposed silicon from the top surface of the
isolation layer (104) outside the area defined for the CNT seed
layer, to leave a CNT single crystal silicon seed layer (120) in
the single crystal silicon. The CNT seed layer photoresist pattern
(118) is removed prior to subsequent processing, using known
photoresist removal methods, possibly including exposing the IC
(100) to an oxygen containing plasma, followed by a wet cleanup to
remove any organic residue from the top surface of the CNT seed
layer (120). The silicon seed layer (120) is preferably 1 to 3
nanometers thick.
[0022] FIG. 1F depicts the IC (100) after conversion of the silicon
in the silicon seed layer to silicon carbide, to form a single
crystal silicon carbide seed layer (122) on a top surface of the
isolation layer (104). The silicon carbide seed layer (122) is
preferably in the hexagonal phase, and is formed by known
processes, for example by exposing the IC (100) to a mixture of 90%
to 99.5% hydrogen gas, 0.1% to 5% silicon halide gas, 0.1% to 5%
hydrocarbon gas, and 0.01% to 1% water vapor while the IC (100) is
heated to approximately 1200 C.
[0023] FIG. 1G depicts the IC (100) after formation of a single
layer of graphene (124) on a top surface of the silicon carbide
seed layer (122). The graphene is formed on the top surface of the
silicon carbide seed layer by known methods, possibly including
removing silicon from a top region of the silicon carbide using
laser ablation, thermal desorption, for example by heating the IC
(100) to between 1000 C and 1400 C for 20 minutes in a vacuum less
than 10.sup.-6 torr, or other methods. In a preferred embodiment,
the graphene layer (124) extends to lateral edges of the silicon
carbide seed layer (122). An orientation of the honeycomb lattice
of the graphene is established by a crystal orientation of the
silicon carbide seed layer (122).
[0024] FIG. 1H depicts the IC (100) after formation of a CNT
transistor body (126) from the graphene layer depicted in FIG. 1G.
The CNT transistor body (126) is formed in a single-wall
configuration using known processes, for example by exposing the
graphene layer (124) to carbon containing gases and catalytic
metals while being heated between 1100 C and 1400 C, so as to grow
more graphene at lateral edges of the graphene layer (124). In a
preferred embodiment, the formation of the CNT is performed in a
manner that desirably provides metal atoms from the silicided
source/drain region (114) to act in a catalytic manner to promote
the formation of the CNT (126). A chirality of the CNT transistor
body (126) is desirably established by an orientation of the single
crystal silicon seed layer (120) such that the CNT transistor body
(126) has a semiconductor electrical form. Furthermore, a radius of
the CNT transistor body (126) is desirably determined by a width of
the single crystal silicon seed layer (120), which in turn
establishes a bandgap energy of the CNT transistor body (126).
Electrical properties of the CNT transistor body are also affected
by the particular metal present in the silicided source/drain
region (114). The conductivity type, n-type or p-type, of the CNT
transistor body (126) may be established with subsequent processing
using known methods, prior to formation of a gate dielectric layer
on the CNT transistor body (126).
[0025] FIG. 1I depicts the IC (100) after formation of a gate
dielectric layer (128) on an exterior surface of the CNT transistor
body (126). The gate dielectric layer (128) is formed of known
transistor gate materials, including silicon dioxide, nitrogen
doped silicon dioxide, silicon oxy-nitride, hafnium oxide, layers
of silicon dioxide and silicon nitride, or other insulating
material, and deposited by known gate material deposition
processes. It will be recognized by those familiar with CNT devices
that the gate dielectric layer (128) is not formed in a manner
similar to gate oxides grown on silicon substrates, in that
formation of the gate dielectric layer (128) does not consume CNT
material in the CNT transistor body (126). The gate dielectric
layer (128) may optionally overlap the silicided source/drain
region (114). The gate dielectric layer may optionally be patterned
prior to subsequent fabrication steps, or may be patterned later in
the fabrication process sequence.
[0026] FIG. 1J depicts the IC (100) after formation of a transistor
gate (130) on an exterior surface of the gate dielectric layer
(128). The transistor gate (130) may be formed of any conductor
material with a desired work function which is compatible with the
CNT transistor body (126), such as polycrystalline silicon,
commonly known as polysilicon. The silicided source/drain region
(114) in conjunction with the second silicided source/drain region
which is not shown in FIG. 1I for clarity, the CNT transistor body
(126), the gate dielectric layer (128) and the transistor gate
(130) form the inventive CNT transistor, which may be n-channel or
p-channel according to process operations executed on the CNT
transistor body (126).
[0027] Formation of the single crystal silicon carbide seed layer
in a self aligned manner from the single crystal silicon seed layer
which is photolithographically defined is advantageous because the
chirality and diameter of the CNT transistor body (126) are
desirably reproducible in multiple instances of the inventive CNT
transistor in the IC (100). Reproducibility of the chirality and
diameter of the CNT transistor body (126) is furthermore
advantageous because several performance parameters of the CNT
transistor are substantially affected by the chirality and diameter
of the CNT transistor body (126), including a threshold voltage,
on-state drive current and off-state leakage current.
[0028] Furthermore, provision of catalytic metal atoms from the
silicided source/drain region (114) during formation of the CNT
transistor body (126) is advantageous because a consistency of the
CNT is improved.
[0029] In an alternate embodiment, a first IC may be formed on a
first substrate using a first metal, for example nickel, in
silicided source/drain regions to obtain a first set of transistor
properties, and a second IC may be formed on a second substrate
using a second metal, for example cobalt, in silicided source/drain
regions to obtain a second set of transistor properties. This is
advantageous because it provides increased IC performance range
with minimal increased fabrication costs.
[0030] FIG. 2 is a cross-section of an IC containing a second
embodiment of the CNT transistor. The IC (200) is formed on a
substrate (202), as described in reference to FIG. 1A, which
includes an isolation layer (204). Single crystal silicon seed
layers (206) of substantially equal width are formed on a top
surface of the isolation layer (204) by a process sequence as
described in reference to FIG. 1A through FIG. 1E. Single wall
thickness CNT transistor bodies (208) of substantially equal
diameter and chirality are formed on top surfaces of the seed
layers (206) by a process sequence as described in reference to
FIG. 1F and FIG. 1G. The conductivity type, n-type or p-type, of
the CNT transistor bodies (208) may be established with subsequent
processing. The CNT transistor bodies (208) are electrically
connected to silicided source/drain regions, not shown in FIG. 2
for clarity. A gate dielectric layer (210) is formed in a conformal
manner on exterior surfaces of the CNT transistor bodies (208) as
described in reference to FIG. 1H. In the instant embodiment, the
CNT transistor bodies (208) are laterally spaced such that gate
dielectric material in the gate dielectric layer (210) bridges gaps
between adjacent CNT transistor bodies (208). The CNT transistor of
the instant embodiment may be n-channel or p-channel according to
process operations executed on the CNT transistor bodies (208).
[0031] Still referring to FIG. 2, a transistor gate (212) is formed
on an exterior surface of the gate dielectric layer (210), as
described in reference to FIG. 1I. Including more than one CNT
transistor body (208) desirably increases a current capacity of the
instant embodiment. Spacing the CNT transistor bodies (208) so that
gate dielectric material bridges the gaps between adjacent CNT
transistor bodies (208) desirably allows planar gate material
formation processes to be employed in forming the transistor gate
(212).
[0032] FIG. 3 is a cross-section of an IC containing a third
embodiment of the CNT transistor. The IC (300) is formed on a
substrate (302), as described in reference to FIG. 1A, which
includes an isolation layer (304). Single crystal silicon seed
layers (306) of substantially equal width are formed on a top
surface of the isolation layer (304) by a process sequence as
described in reference to FIG. 1A through FIG. 1E. Single wall
thickness CNT transistor bodies (308) of substantially equal
diameter and chirality are formed on top surfaces of the seed
layers (306) by a process sequence as described in reference to
FIG. 1F and FIG. 1G. The conductivity type, n-type or p-type, of
the CNT transistor bodies (308) may be established with subsequent
processing. The CNT transistor bodies (308) are electrically
connected to silicided source/drain regions, not shown in FIG. 3
for clarity. A gate dielectric layer (310) is formed in a conformal
manner on exterior surfaces of the CNT transistor bodies (308) as
described in reference to FIG. 1H. In the instant embodiment, the
CNT transistor bodies (308) are laterally spaced such that gate
dielectric material in the gate dielectric layer (310) does not
bridge gaps between adjacent CNT transistor bodies (308), and
leaves sufficient space for gate material to be deposited on the
gate dielectric layer (310) covering a majority of the CNT
transistor bodies (308).
[0033] Still referring to FIG. 3, a transistor gate (312) is formed
on an exterior surface of the gate dielectric layer (310), as
described in reference to FIG. 1I. Spacing the CNT transistor
bodies (308) so that gate material covers a majority of the CNT
transistor bodies (308) desirably increases a current capacity of
the instant embodiment above an alternate embodiment in which gate
material does not cover a majority of CNT transistor bodies. The
CNT transistor of the instant embodiment may be n-channel or
p-channel according to process operations executed on the CNT
transistor bodies (308).
[0034] FIG. 4A through FIG. 4D are cross-sections of an IC
containing a split gate CNT transistor in a fourth embodiment of
the instant invention, depicted in successive stages of
fabrication. Referring to FIG. 4A, the IC (400) is formed on a
substrate (402), as described in reference to FIG. 1A, which
includes an isolation layer (304). A single crystal silicon seed
layer (406) of a desired width is formed on a top surface of the
isolation layer (404) by a process sequence as described in
reference to FIG. 1A through FIG. 1E. A single wall thickness CNT
transistor body (408) of a desired diameter and chirality is formed
on a top surface of the seed layer (406) by a process sequence as
described in reference to FIG. 1F and FIG. 1G. The conductivity
type, n-type or p-type, of the CNT transistor body (408) may be
established with subsequent processing. The CNT transistor body
(408) is electrically connected to silicided source/drain regions,
not shown in FIG. 4A for clarity. A gate dielectric layer (410) is
formed in a conformal manner on an exterior surface of the CNT
transistor body (408) as described in reference to FIG. 1H. A
transistor gate (412) is formed on an exterior surface of the gate
dielectric layer (410), as described in reference to FIG. 1I.
[0035] FIG. 4B depicts the IC (400) during the first part of a gate
splitting operation. A planarizing layer (414), for example an
organic polymer, is formed on an existing top surface of the IC
(400), for example by using known methods of spin coating. A top
surface of the planarizing layer (414) is substantially flat within
20 nanometers across the CNT transistor area. The IC (400) is then
exposed to etchants (416) produced by a plasma, for example
containing fluorine. The etchants (416) and conditions of
generating the plasma are selected so that material from the
planarizing layer (414) is removed at substantially a same rate as
material from the transistor gate (412).
[0036] FIG. 4C depicts the IC (400) near the end of the gate
splitting operation. The etchants (416) have removed material from
the planarizing layer (414) and the transistor gate (412) such that
the transistor gate (412) is split into two disconnected gate
regions which contact a left side and a right side of the gate
dielectric layer (410). The planarizing layer (414) is subsequently
removed without further removal of a substantial amount of material
from the transistor gate (412) or the gate dielectric layer (410),
using known methods, for example, dissolving the planarizing layer
(414) in solvents.
[0037] FIG. 4D depicts the IC (400) after fabrication of the split
gate CNT transistor according to the instant embodiment is
completed, which features a left-side transistor gate (418) and an
opposing right-side transistor gate (420). A split gate
configuration in a CNT transistor is advantageous because higher
logic gate density is enabled. The CNT transistor of the instant
embodiment may be n-channel or p-channel according to process
operations executed on the CNT transistor body (408). Other methods
of forming the left-side transistor gate (418) and an opposing
right-side transistor gate (420) are within the scope of the
instant invention.
[0038] FIG. 5 is a cross-section of an IC containing a dual body
split gate CNT transistor formed according to a fifth embodiment of
the instant invention. The IC (500) is formed on a substrate (502),
as described in reference to FIG. 1A, which includes an isolation
layer (504). A left-side single crystal silicon seed layer (506)
and a right-side single crystal silicon seed layer (508) having
substantially equal widths, are formed on a top surface of the
isolation layer (504) by a process sequence as described in
reference to FIG. 1A through FIG. 1E. A single wall thickness
left-side CNT transistor body (510) and a single wall thickness
right-side CNT transistor body (512) having substantially equal
diameters and chirality are formed on top surfaces of the left-side
seed layer (506) and the right-side seed layer (508), respectively,
by a process sequence as described in reference to FIG. 1F and FIG.
1G. The CNT transistor bodies (510, 512) may be both n-type, both
p-type, or one n-type and one p-type, as established with
subsequent processing. The left-side CNT transistor body (510) is
electrically connected to left-side silicided source/drain regions
and the right-side CNT transistor body (512) is electrically
connected to right-side silicided source/drain regions, possibly
connected to the left-side silicided source/drain regions. The
silicided source/drain regions are out of the plane of FIG. 5, and
hence are not shown in FIG. 5 for clarity. A gate dielectric layer
(514) is formed in a conformal manner on exterior surfaces of the
CNT transistor bodies (510, 512) as described in reference to FIG.
1H. In the instant embodiment, the CNT transistor bodies (510, 512)
are laterally spaced such that gate dielectric material in the gate
dielectric layer (514) does not bridge a gap between the left-side
CNT transistor body (510) and the right-side transistor body (512),
leaving sufficient space for gate material to be deposited on the
gate dielectric layer (514) covering a majority of the CNT
transistor bodies (510, 512).
[0039] Continuing to refer to FIG. 5, a left-side transistor split
gate (516) is formed on an exterior surface of the gate dielectric
layer (514) on a left side of the left-side CNT transistor body
(510), by the process sequence described in reference to FIG. 4A
through FIG. 4D. Concurrently with the left-side transistor split
gate (516), a center transistor split gate (518) is formed on the
exterior surface of the gate dielectric layer (514) on a right side
of the left-side CNT transistor body (510) and a left side of the
right-side CNT transistor body (512), and a right-side transistor
split gate (520) is formed on the the exterior surface of the gate
dielectric layer (514) on a right side of the right-side CNT
transistor body (512). The left-side transistor split gate (516),
the center transistor split gate (518) and the right-side
transistor split gate (520) are electrically disconnected from each
other. A split gate configuration of a dual body CNT transistor is
advantageous in a variety of circuits, for example in a static
random access memory (SRAM) cell or a current mirror circuit.
[0040] FIG. 6 is a cross-section of an IC containing two CNT
transistors with different diameter bodies, formed according to the
instant invention. The IC (600) is formed on a substrate (602), as
described in reference to FIG. 1A, which includes an isolation
layer (604). A first single crystal silicon seed layer (606) of a
first width is formed on a top surface of the isolation layer (604)
by a process sequence as described in reference to FIG. 1A through
FIG. 1E. Concurrently with the first seed layer (606), a second
single crystal silicon seed layer (608) of a second width,
significantly different from the first width, is formed on the top
surface of the isolation layer (604). A first single wall thickness
CNT transistor body (610) of a first diameter established by the
first width of the first seed layer (606), is formed on a top
surface of the first seed layer (606) by a process sequence as
described in reference to FIG. 1F and FIG. 1G. Concurrently with
the first CNT transistor body (610), a second single wall thickness
CNT transistor body (612) of a second diameter established by the
second width of the second seed layer (608), and significantly
different from the first diameter, is formed on a top surface of
the first seed layer (606). The CNT transistor bodies (610, 612)
may be both n-type, both p-type, or one n-type and one p-type, as
established with subsequent processing. The first CNT transistor
body (610) is electrically connected to a first set of silicided
source/drain regions and the second CNT transistor body (612) is
electrically connected to a second set of silicided source/drain
regions. The silicided source/drain regions are out of the plane of
FIG. 6, and hence are not shown in FIG. 6 for clarity. A first gate
dielectric layer (614) is formed in a conformal manner on an
exterior surface of the first CNT transistor body (610), and a
second gate dielectric layer (616) is formed in a conformal manner
on an exterior surface of the second CNT transistor body (612), as
described in reference to FIG. 1H. A first transistor gate (618) is
formed on an exterior surface of the first gate dielectric layer
(614), and a second transistor gate (620) is formed on an exterior
surface of the second gate dielectric layer (616), as described in
reference to FIG. 1I. A first CNT transistor includes the first CNT
transistor body (610), the first set of silicided source/drain
regions, the first gate dielectric layer (614), and the first
transistor gate (618). Similarly, a second CNT transistor includes
the second CNT transistor body (612), the second set of silicided
source/drain regions, the second gate dielectric layer (616), and
the second transistor gate (620). Transistor performance
parameters, such as on-state drive current, off-state leakage
current, and threshold voltage, may be significantly different for
the two CNT transistors of the instant embodiment due to the
significant difference in diameters of the CNT transistor bodies
(610, 612). This is advantageous in ICs with circuits whose
performance is optimized at different values of transistor
parameters. For example, logic circuits run faster when transistor
thresholds are relatively low, between one-fourth and one-third of
a circuit operating voltage, while SRAM cells are more reliable
when transistor thresholds are relatively high, around one-half of
the circuit operating voltage. Concurrent formation of CNT
transistors with significantly different transistor performance
parameters in the IC (600) is advantageous because it enables
increased IC performance at lower fabrication cost. Each CNT
transistor of the instant embodiment may be n-channel or p-channel
according to process operations executed on the CNT transistor
bodies (610, 612).
* * * * *