U.S. patent application number 12/589207 was filed with the patent office on 2010-02-18 for current confining layer for gmr device.
This patent application is currently assigned to Headway Technologies, Inc.. Invention is credited to Yu-Hsia Chen, Daniel Gabels, Min Li, Kunliang Zhang.
Application Number | 20100037453 12/589207 |
Document ID | / |
Family ID | 38368169 |
Filed Date | 2010-02-18 |
United States Patent
Application |
20100037453 |
Kind Code |
A1 |
Zhang; Kunliang ; et
al. |
February 18, 2010 |
Current confining layer for GMR device
Abstract
Concerns about inadequate electromigration robustness in CCP CPP
GMR devices have been overcome by adding magnesium to the current
confining structures that are presently in use. In one embodiment
the alumina layer, in which the current carrying copper regions are
embedded, is fully replaced by a magnesia layer. In other
embodiments, alumina is still used but a layer of magnesium is
included within the structure before it is subjected to ion
assisted oxidation.
Inventors: |
Zhang; Kunliang; (Milpitas,
CA) ; Gabels; Daniel; (San Franciso, CA) ; Li;
Min; (Dublin, CA) ; Chen; Yu-Hsia; (Mountain
View, CA) |
Correspondence
Address: |
SAILE ACKERMAN LLC
28 DAVIS AVENUE
POUGHKEEPSIE
NY
12603
US
|
Assignee: |
Headway Technologies, Inc.
|
Family ID: |
38368169 |
Appl. No.: |
12/589207 |
Filed: |
October 20, 2009 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11352676 |
Feb 13, 2006 |
7610674 |
|
|
12589207 |
|
|
|
|
Current U.S.
Class: |
29/603.14 |
Current CPC
Class: |
Y10T 29/49052 20150115;
H01L 43/12 20130101; G01R 33/093 20130101; G11B 5/398 20130101;
B82Y 25/00 20130101; Y10T 29/49046 20150115; G11B 5/3906 20130101;
Y10T 29/49044 20150115; H01L 43/08 20130101; Y10T 29/49048
20150115 |
Class at
Publication: |
29/603.14 |
International
Class: |
G11B 5/127 20060101
G11B005/127 |
Claims
1. A method to form a current confining path as part of a CPP GMR
device, comprising: providing a magnetically pinned layer and
depositing thereon a first copper layer; depositing a first layer
of AlCu alloy on said-first copper layer; depositing a layer of
magnesium on said first AlCu layer; depositing a second layer of
AlCu alloy on said magnesium layer; following a pre-treatment,
subjecting said Mg and AlCu layers to ion assisted oxidation
whereby said AlCu layers segregate into regions of alumina and free
copper; depositing a second copper layer on said second
copper-alumina layer, whereby current flow between said first and
second copper layers is confined to said regions of free copper;
and depositing a magnetically free layer on said second copper
layer.
2. The method of claim 1 wherein said AlCu alloy layers have a
total thickness of between 0 and 15 Angstroms.
3. The method of claim 1 wherein said magnesium layer has a
thickness between about 1 and 15 Angstroms.
4. A method to form a current confining path as part of a CPP GMR
device, comprising: providing a magnetically pinned layer and
depositing thereon a first copper layer; depositing a layer of
magnesium on said first copper layer; depositing a layer of AlCu
alloy on said magnesium layer; following a pre-treatment,
subjecting said Mg and AlCu layers to ion assisted oxidation
whereby said AlCu layer segregates into regions of alumina and free
copper; depositing a second copper layer on said second
copper-alumina layer, whereby current flow between said first and
second copper layers is confined to said regions of free copper;
and depositing a magnetically free layer on said second copper
layer.
Description
[0001] This is a divisional application of U.S. patent application
Ser. No. 11/352,676, filed on Feb. 13, 2006, which is herein
incorporated by reference in its entirety, and assigned to a common
assignee.
FIELD OF THE INVENTION
[0002] The invention relates to the general field of CCP/CPP GMR
memory elements with particular reference to the current confining
portions.
BACKGROUND OF THE INVENTION
[0003] CCP-CPP GMR read heads are considered as promising
candidates for 180 Gb/in.sup.2 and higher magnetic recording
densities. This increase in recording density requires the
reduction of the read head dimensions. For example, for 180
Gb/in.sup.2, dimensions around (0.1.times.0.1 microns are required.
A CPP read head can be considered functional only if a significant
output voltage, Vout, can be achieved when the head senses the
magnetic field of a recorded medium. If DR/R is defined as the
percentage resistance change, at constant voltage, under the
magnetic field for the sensor and V is the voltage applied across
the sensor (BHV), then Vout=DR/R.times.V.
[0004] Referring now to FIG. 1, we show there the main features of
a CCP-CPP GMR (current confined path-current perpendicular to plane
giant magneto resistance) read head device (as well as bottom and
top leads 11a and 11b respectively). These are an
anti-ferromagnetic (pinning) layer 12, which may include a seed
layer (not shown), pinned layer 14 (usually a tri-layer that acts
as a synthetic AFM, but shown here as a single layer), a
non-magnetic spacer layer 15 (which will be discussed further
below), a free layer 16, and a capping layer 17.
[0005] When the free layer is exposed to an external magnetic
field, the direction of its magnetization is free to rotate
according to the direction of the external field. After the
external field is removed, the magnetization of the free layer will
stay at a direction, which is dictated by the minimum energy state,
determined by the crystalline and shape anisotropy, current field,
coupling field and demagnetization field. If the direction of the
pinned field is parallel to the free layer, electrons passing
between the free and pinned layers, suffer less scattering. Thus,
the resistance at this state is lower. If, however, the
magnetization of the pinned layer is anti-parallel to that of the
free layer, electrons moving from one layer into the other will
suffer more scattering so the resistance of the structure will
increase. The change in resistance of a spin valve is typically
5-15%.
[0006] In the foregoing discussion it was tacitly implied that
non-magnetic spacer layer 15 is a homogenous layer of a single
conductive material. In the CCP (current confined path) design, the
spacer layer is actually a trilayer of two conductive layers (such
as copper) with a very thin insulating layer between them. The
latter is typically between about 5 and 15 Angstroms thick and
includes a limited number of metal paths within itself. Thus,
current through the spacer layer is confined to those areas where
the two conductive layers contact one another via these metal paths
(shown schematically in FIG. 1 as the hatched areas within layer
15).
[0007] As can be seen in FIG. 2a, layer 15 is formed by first
laying down copper layer 21 followed by AlCu layer 22. Through the
addition of several novel features the technology for manufacturing
CCP-CPP GMR has been greatly improved. However, there remains some
concern with regard to electromigration (EM) in these CCP-CPP GMR
devices. The present invention discloses a variety of ways to
overcome this problem.
[0008] A routine search of the prior art was performed with the
following references of interest being found:
[0009] U.S. Pat. No. 6,560,077 (Fujiwara et al) teaches that a
current-confining path is formed in an insulating layer of a
GMR-CPP. U.S. 2005/0002126 (Fujiwara et al) discloses a
current-confining layer structure formed of a conductor and an
insulator. The conductor may be Al, Mg, Cr, Cu, etc. U.S.
2005/0152076 (Nagasaka et al) teaches that oxidation of an magnetic
layer results in a current-confining effect. Oxidation of a
magnetic intermediate layer such as CoFe between two layers of Cu
is taught. U.S. 2005/0094317 (Funayama) and 2005/0052787 (Funayama
et al) show a current control region comprising AlOx and Cu. Mg or
Cr could be used with a copper content of 1% to 50%.
[0010] U.S. 2004/0190204 (Yoshikawa et al) shows an intermediate
layer comprising Cu/oxidized AlCu/Cu where AlCu is oxidized by IAO.
U.S. 2003-0053269 (Nishiyama) teaches that a non-magnetic layer
functions as a current confining layer. This layer may be Al203,
Si02, or Ta02. U.S. 2005.0122633 (Nowak et al) describes forming
current-confining paths in the MR stack.
SUMMARY OF THE INVENTION
[0011] It has been an object of at least one embodiment of the
present invention to provide a CCP CPP GMR device that has good
electromigration robustness.
[0012] Another object of at least one embodiment of the present
invention has been to provide a method for forming said device.
[0013] These objects have been achieved by modifying the current
confining structures, that are presently in use, through the
addition of magnesium. In one embodiment the alumina layer, in
which the current carrying copper regions are embedded, is fully
replaced by a magnesia layer. In other embodiments, alumina is
still used but a layer of magnesium is included within the
structure before it is subjected to ion assisted oxidation.
[0014] Since magnesium is an excellent oxygen getter, it will take
excess oxygen away from AlOx and thereby prevent the copper from
being oxidized. Also, Mg insertion at the AlCu layer breaks the
growth pattern of the AlCu so the final stress state will be much
different from that of a pure alumina layer. All these factors
contribute to the electromigration robustness improvement provided
by the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 illustrates a typical CCP CPP GMR device of the prior
art.
[0016] FIGS. 2a and 2b show the basic process used to form the CCP
region of FIG. 1.
[0017] FIG. 3 shows a first embodiment of the invention.
[0018] FIG. 4 shows a 2nd embodiment of the invention.
[0019] FIGS. 5a and 5b show two more embodiments which are
variations of FIG. 4.
[0020] FIGS. 6 and 7 display experimental data that confirm the
effectiveness of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0021] In FIG. 2a we illustrated the initial steps of the
constricted path formation process. As part of the present
invention, this is now followed by a PT (pre-treatment) step that
typically comprises exposure to an Ar plasma etch (20 w, 50 sccm)
for about 40 seconds. After PT, the structure is subjected to IAO
(ion assisted oxidation) which typically comprises exposure to a 27
W plasma in a mix of 50 sccm Ar and 1 sccm of O.sub.2 for about 30
seconds.
[0022] As a consequence of the IAO step, former layer 22 can be
seen in FIG. 2b to now comprise multiple regions of alumina 23 that
surround relatively pure copper regions 24 within which current
flowing between the top and bottom conductive leads will now be
confined. At the completion of the IAO step, a second copper layer
is deposited. This is shown as 21b in FIG. 2b where the original
layer 21 is designated as 21a.
[0023] As discussed earlier, an AlCu layer has been routinely
incorporated within our CCP-CPP GMR structures. After the AlCu
deposition, this layer was exposed to oxygen by means of the PT/IAO
process which resulted in the formation of an alumina layer, in
which were embedded regions of free copper that provided the
desired confined current paths. Al.sub.2O.sub.3 is, however, known
to be amorphous under the above formation conditions suggesting
that it would not provide a good template for Cu crystalline
growth. This, in turn, leads to a deterioration of the EM
robustness and thus introduces a reliability problem.
[0024] MgCu alloy, on the other hand, will form a current confining
path in MgO through Cu metal segregation following similar PT/IAO
treatments of deposited MgCu. Magnesia has been demonstrated to
provide a crystalline barrier with a very large dR/R ratio
(specifically for the TMR (tunneling magnetoresistance) case). Upon
oxidation by the PT/IAO process and post-annealing, it provides a
crystalline template suitable for Cu crystalline growth. It follows
that the CPP EM robustness will also be greatly improved.
1.sup.st Embodiment
[0025] Referring now to FIG. 3, we show there a first embodiment of
the invention. Starting with magnetically pinned layer 14, copper
layer 21a is deposited thereon. This is followed by the deposition
of a MgCu alloy layer on layer 21a. This MgCu layer has a
composition of Mg(1-x)Cu(x) where x ranges from about 5 atomic % to
about 60 atomic %. It has a thickness between about 5 and 15
Angstroms.
[0026] Now a pre-treatment by a low power plasma etch is provided
which is followed by ion assisted oxidation in a mixture of argon
and oxygen. As a result of these treatments, the contents of this
MgCu layer segregate themselves into regions 33 of relatively pure
magnesia and relatively pure free copper 34, the latter becoming
the confined paths through which current will have to flow when
traversing the device.
[0027] The method ends with the deposition of a second copper layer
21b on copper-magnesia layer 33, followed by the deposition of
magnetic free layer 16. Copper layers 21a and 21b each have a
thickness between about 1 and 7 Angstroms.
2.sup.nd Embodiment
[0028] Referring next to FIG. 4, shown there is lower copper layer
21a on which is deposited AlCu alloy layer 22a. As a key feature of
the invention, this is followed by the deposition of pure magnesium
layer 41 onto which is deposited (second) AlCu alloy layer 22b.
This structure is then subjected to the PT/OIA treatment which was
described above resulting, as before, in the segregation of the
AlCu into regions of alumina and free copper. Also as before, this
is followed by the deposition of second copper layer 21b.
[0029] The presence of magnesium as a `dopant` in the final
structure ensures the needed level of crystallinity of the alumina
that surrounds the copper paths through it.
3.sup.rd and 4.sup.th Embodiments
[0030] Referring now to FIGS. 5a and 5b, these embodiments are
similar to the 2.sup.nd embodiment except that the magnesium layer
is located either above the AlCu layer (FIG. 5a) or below it (FIG.
5b), rather than in the middle of it (FIG. 4).
[0031] The net result after the PT/IAO treatments is similar to
that obtained in the 2.sup.nd embodiment.
EXPERIMENTAL VERIFICATION
[0032] Since the Mg is an excellent oxygen getter, it will take the
excess oxygen away from the AlOx and prevent Cu from being
oxidized. Also, Mg insertion at the AlCu layer breaks the growth
pattern of the AlCu so the stress state will be much different
after PT/IAO. All these factors contribute to the EM robustness
improvement as we subsequently confirmed through experiments with
CPP wafers.
[0033] As shown in FIGS. 6 and 7, CPP dR/R (% amplitude) and CPP R
(resistance) remain almost unchanged after 150 hours of EM test
under 130 mV at 120% C. The structures used for these tests
were:
[0034] Ta10/Ru10/IrMn70/Fe10% Co8/Fe70% Co9/Fe10% Co15/Ru7.5/Fe70%
Co 12/Cu2/Fe70% Co12/Cu5.2/AlCu3/Mg3/AlCu3/PT(20 W50
sccm35s)/IAO(27 W Ar/O=35/0.56 40s)/Cu3/Fe25% Co20/Ni90%
Fe28/Ru10/Ta60/Ru30
* * * * *