| Patent | Date |
|---|
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
Grant 8,557,407 - Zhao , et al. October 15, 2 | 2013-10-15 |
Method of manufacturing a CPP structure with enhanced GMR ratio
Grant 8,484,830 - Zhang , et al. July 16, 2 | 2013-07-16 |
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
Grant 8,337,676 - Zhao , et al. December 25, 2 | 2012-12-25 |
CPP structure with enhanced GMR ratio
Grant 8,289,661 - Zhang , et al. October 16, 2 | 2012-10-16 |
FCC-like trilayer AP2 structure for CPP GMR EM improvement
Grant 8,012,316 - Zhang , et al. September 6, 2 | 2011-09-06 |
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
Grant 8,008,740 - Zhao , et al. August 30, 2 | 2011-08-30 |
Multiple CCP layers in magnetic read head devices
Grant 7,990,660 - Zhang , et al. August 2, 2 | 2011-08-02 |
CPP Structure with enhanced GMR ratio
App 20110179635 - Zhang; Kunliang ; et al. | 2011-07-28 |
CPP structure with enhanced GMR ratio
App 20110183158 - Zhang; Kunliang ; et al. | 2011-07-28 |
Seed/AFM combination for CCP GMR device
Grant 7,978,440 - Li , et al. July 12, 2 | 2011-07-12 |
Multiple CCP layers in magnetic read head devices
App 20110117388 - Zhang; Kunliang ; et al. | 2011-05-19 |
Method of manufacturing a CPP structure with enhanced GMR ratio
Grant 7,918,014 - Zhang , et al. April 5, 2 | 2011-04-05 |
Uniformity in CCP magnetic read head devices
Grant 7,872,838 - Zhang , et al. January 18, 2 | 2011-01-18 |
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
App 20100320076 - Zhao; Tong ; et al. | 2010-12-23 |
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
App 20100304185 - Zhao; Tong ; et al. | 2010-12-02 |
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
Grant 7,780,820 - Zhao , et al. August 24, 2 | 2010-08-24 |
Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications
Grant 7,672,088 - Zhang , et al. March 2, 2 | 2010-03-02 |
Current confining layer for GMR device
App 20100037453 - Zhang; Kunliang ; et al. | 2010-02-18 |
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
App 20100019333 - Zhao; Tong ; et al. | 2010-01-28 |
Ultra thin seed layer for CPP or TMR structure
Grant 7,646,568 - Zhang , et al. January 12, 2 | 2010-01-12 |
FCC-like trilayer AP2 structure for CPP GMR EM improvement
App 20090314632 - Zhang; Kunliang ; et al. | 2009-12-24 |
Method to form a current confining path of a CPP GMR device
Grant 7,610,674 - Zhang , et al. November 3, 2 | 2009-11-03 |
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
Grant 7,602,033 - Zhao , et al. October 13, 2 | 2009-10-13 |
FCC-like trilayer AP2 structure for CPP GMR EM improvement
Grant 7,583,481 - Zhang , et al. September 1, 2 | 2009-09-01 |
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
App 20080299679 - Zhao; Tong ; et al. | 2008-12-04 |
Uniformity in CCP magnetic read head devices
App 20080192388 - Zhang; Kunliang ; et al. | 2008-08-14 |
Free layer for CPP GMR having iron rich NiFe
Grant 7,390,529 - Li , et al. June 24, 2 | 2008-06-24 |
Seed/AFM combination for CCP GMR device
App 20080112089 - Li; Min ; et al. | 2008-05-15 |
Ta based bilayer seed for IrMn CPP spin valve
Grant 7,355,823 - Li , et al. April 8, 2 | 2008-04-08 |
Ta based bilayer seed for IrMn CPP spin valve
Grant 7,352,543 - Li , et al. April 1, 2 | 2008-04-01 |
Process of manufacturing a seed/AFM combination for a CPP GMR device
Grant 7,331,100 - Li , et al. February 19, 2 | 2008-02-19 |
Magnetoresistive spin valve sensor with tri-layer free layer
Grant 7,333,306 - Zhao , et al. February 19, 2 | 2008-02-19 |
Novel way to reduce the ordering temperature for Co2MnSi-like Heusler alloys for CPP, TMR, MRAM, or other spintronics device applications
App 20070297103 - Zhang; Kunliang ; et al. | 2007-12-27 |
CPP spin valve with ultra-thin CoFe(50%) laminations
Grant 7,288,281 - Li , et al. October 30, 2 | 2007-10-30 |
Current confining layer for GMR device
App 20070188936 - Zhang; Kunliang ; et al. | 2007-08-16 |
Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM
Grant 7,238,979 - Horng , et al. July 3, 2 | 2007-07-03 |
Ultra thin seed layer for CPP or TMR structure
App 20070146928 - Zhang; Kunliang ; et al. | 2007-06-28 |
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
App 20070111332 - Zhao; Tong ; et al. | 2007-05-17 |
Robust protective layer for MTJ devices
App 20070080381 - Chien; Chen-Jung ; et al. | 2007-04-12 |
FCC-like trilayer AP2 structure for CPP GMR EM improvement
App 20070070556 - Zhang; Kunliang ; et al. | 2007-03-29 |
Magnetoresistive spin valve sensor with tri-layer free layer
App 20070047159 - Zhao; Tong ; et al. | 2007-03-01 |
Ta based bilayer seed for IrMn CPP spin valve
App 20060165881 - Li; Min ; et al. | 2006-07-27 |
Ta based bilayer seed for IrMn CPP spin valve
App 20060164765 - Li; Min ; et al. | 2006-07-27 |
CPP spin valve with ultra-thin CoFe(50%) laminations
App 20060044704 - Li; Min ; et al. | 2006-03-02 |
Novel buffer (seed) layer in a high performance magnetic tunneling junction MRAM
App 20060022227 - Horng; Cheng T. ; et al. | 2006-02-02 |
Seed/AFM combination for CPP GMR device
App 20060007605 - Li; Min ; et al. | 2006-01-12 |
Free layer for CPP GMR having iron rich NiFe
App 20050264954 - Li, Min ; et al. | 2005-12-01 |
A Method Of Forming A Magnetic Tunneling Junction (mtj) Mram Device And A Tunneling Magnetoresistive (tmr) Read Head
App 20050260772 - Horng, Cheng T. ; et al. | 2005-11-24 |
Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head
Grant 6,960,480 - Horng , et al. November 1, 2 | 2005-11-01 |
| 