U.S. patent application number 12/510591 was filed with the patent office on 2010-02-04 for edge detection method.
This patent application is currently assigned to KABUSHIKI KAISHA TOSHIBA. Invention is credited to Masayuki Dohi, Akihiro Hori, Takuto Inoue, Shunji Kikuchi, Masayuki Narita, Itsuko Sakai, Takayuki Sakai.
Application Number | 20100027032 12/510591 |
Document ID | / |
Family ID | 41608018 |
Filed Date | 2010-02-04 |
United States Patent
Application |
20100027032 |
Kind Code |
A1 |
Dohi; Masayuki ; et
al. |
February 4, 2010 |
EDGE DETECTION METHOD
Abstract
An edge detection method includes preparing a transparent
substrate which includes a first main face having a first main
region and a first peripheral region and a second main face having
a second main region and a second peripheral region, the first
peripheral region having an inclination angle of .theta.a1 and the
second peripheral region having an inclination angle of .theta.a2,
causing measuring light to enter the first peripheral region from a
direction perpendicular to the first main region, detecting a
non-emitting region where the measuring light is not emitted from
the second peripheral region, and detecting an edge of the
transparent substrate on the basis of the non-emitting region,
wherein if a refractive index of the transparent substrate is n,
the inclination angles .theta.a1 and .theta.a2 satisfy the
following expression: n.times.sin(.theta.a1+.theta.a2-arcsin(sin
.theta.a1/n)).gtoreq.1
Inventors: |
Dohi; Masayuki;
(Yokohama-shi, JP) ; Sakai; Itsuko; (Yokohama-shi,
JP) ; Sakai; Takayuki; (Chofu-shi, JP) ;
Kikuchi; Shunji; (Kitakami-shi, JP) ; Inoue;
Takuto; (Kitakami-shi, JP) ; Hori; Akihiro;
(Oita-shi, JP) ; Narita; Masayuki; (Chigasaki-shi,
JP) |
Correspondence
Address: |
TUROCY & WATSON, LLP
127 Public Square, 57th Floor, Key Tower
CLEVELAND
OH
44114
US
|
Assignee: |
KABUSHIKI KAISHA TOSHIBA
Tokyo
JP
|
Family ID: |
41608018 |
Appl. No.: |
12/510591 |
Filed: |
July 28, 2009 |
Current U.S.
Class: |
356/614 |
Current CPC
Class: |
H01L 21/67259 20130101;
G01B 11/028 20130101 |
Class at
Publication: |
356/614 |
International
Class: |
G01B 11/00 20060101
G01B011/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 29, 2008 |
JP |
2008-195017 |
Claims
1. An edge detection method comprising: preparing a transparent
substrate which includes a first main face that has a first main
region and a first peripheral region outside the first main region
and a second main face that has a second main region in parallel
with the first main region and a second peripheral region outside
the second main region, the first peripheral region having an
inclination angle of .theta.a1 and the second peripheral region
having an inclination angle of .theta.a2; causing measuring light
to enter the first peripheral region of the first main face from a
direction perpendicular to the first main region of the first main
face; detecting a non-emitting region where the measuring light is
not emitted from the second peripheral region of the second main
face; and detecting an edge of the transparent substrate on the
basis of the non-emitting region, wherein if a refractive index of
the transparent substrate is n, the inclination angles .theta.a1
and .theta.a2 satisfy the following expression:
n.times.sin(.theta.a1+.theta.a2-arcsin(sin
.theta.a1/n)).gtoreq.1
2. The method according to claim 1, wherein the inclination angle
.theta.a1 and inclination angle .theta.a2 are equal to each
other.
3. The method according to claim 1, wherein the measuring light
reflects totally at the second peripheral region.
4. The method according to claim 1, wherein the first main face or
the second main face has a semiconductor substrate mounted
thereon.
5. The method according to claim 4, wherein the semiconductor
substrate has an element region provided therein.
6. The method according to claim 1, wherein the transparent
substrate is placed on a rotatable stage.
7. The method according to claim 1, wherein the first peripheral
region and second peripheral region are subjected to beveling.
8. The method according to claim 1, wherein the non-emitting region
is detected with a line sensor.
9. An edge detection method comprising: preparing a transparent
substrate which includes a first main face that has a first main
region and a first peripheral region outside the first main region
and a second main face that has a second main region in parallel
with the first main region and a second peripheral region outside
the second main region, each of the first peripheral region and the
second peripheral region having an inclination angle becoming
smaller toward the inner part; causing measuring light to enter the
first peripheral region of the first main face from a direction
perpendicular to the first main region of the first main face;
detecting a non-emitting region where the measuring light is not
emitted from the second peripheral region of the second main face;
and detecting an edge of the transparent substrate on the basis of
the non-emitting region.
10. The method according to claim 9, wherein each of the first
peripheral region of the first main face and the second peripheral
region of the second main face has a curved surface.
11. The method according to claim 9, wherein the measuring light
reflects totally at the second peripheral region.
12. The method according to claim 9, wherein the first main face or
the second main face has a semiconductor substrate mounted
thereon.
13. The method according to claim 12, wherein the semiconductor
substrate has an element region provided therein.
14. The method according to claim 9, wherein the transparent
substrate is placed on a rotatable stage.
15. The method according to claim 9, wherein the first peripheral
region and second peripheral region are subjected to beveling.
16. The method according to claim 9, wherein the non-emitting
region is detected with a line sensor.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from prior Japanese Patent Application No. 2008-195017,
filed Jul. 29, 2008, the entire contents of which are incorporated
herein by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] This invention relates to an edge detection method.
[0004] 2. Description of the Related Art
[0005] When the edge of a substrate is detected, if the substrate
is opaque, the edge can be detected easily by an optical method.
Specifically, when a region including the edge of the substrate is
irradiated with measuring light, the measuring light is blocked by
the substrate in the region where the substrate exists, with the
result that the light does not reach a light detecting part (or a
light-receiving part). The edge can be detected by detecting a
region where the measuring light does not reach the light detecting
part (or a dark region). However, in the case of a transparent
substrate, since measuring light passes through the transparent
substrate, the dark region cannot be detected. Accordingly, it is
not easy to detect the edge of a transparent substrate by an
optical method.
[0006] To overcome the above problem, a method of beveling the
peripheral part of the transparent substrate to form an inclined
surface and refracting measuring light at the inclined surface has
been proposed (refer to Jpn. Pat. Appln. KOKAI Publication No.
2005-109376). Specifically, since the measuring light is refracted
at the inclined surface, producing a dark region, the edge of the
transparent substrate can be detected. However, it is difficult to
make the width of the dark region sufficiently wide by just
refracting the measuring light. This causes the problem of being
incapable of detecting the dark region reliably.
[0007] In addition, a method of causing measuring light to
obliquely enter a transparent substrate to produce a dark region by
total internal reflection has been proposed (refer to Jpn. Pat.
Appln. KOKAI Publication No. 2007-165655). However, with this
method, if the thickness or refractive index of the transparent
substrate changes, the measurement system has to be adjusted. For
example, when the refractive index of the transparent substrate has
changed, the total internal reflection angle has also changed.
Therefore, the incident angle of the measuring light has to be
changed. It is not easy for the user to make such an
adjustment.
[0008] As described above, it has been difficult to detect the edge
of a transparent substrate easily and reliably by an optical
method.
BRIEF SUMMARY OF THE INVENTION
[0009] A first aspect of the present invention, there is provided
an edge detection method comprising: preparing a transparent
substrate which includes a first main face that has a first main
region and a first peripheral region outside the first main region
and a second main face that has a second main region in parallel
with the first main region and a second peripheral region outside
the second main region, the first peripheral region having an
inclination angle of .theta.a1 and the second peripheral region
having an inclination angle of .theta.a2; causing measuring light
to enter the first peripheral region of the first main face from a
direction perpendicular to the first main region of the first main
face; detecting a non-emitting region where the measuring light is
not emitted from the second peripheral region of the second main
face; and detecting an edge of the transparent substrate on the
basis of the non-emitting region, wherein if a refractive index of
the transparent substrate is n, the inclination angles .theta.a1
and .theta.a2 satisfy the following expression:
n.times.sin(.theta.a1+.theta.a2-arcsin(sin
.theta.a1/n)).gtoreq.1
[0010] A second aspect of the present invention, there is provided
an edge detection method comprising: preparing a transparent
substrate which includes a first main face that has a first main
region and a first peripheral region outside the first main region
and a second main face that has a second main region in parallel
with the first main region and a second peripheral region outside
the second main region, each of the first peripheral region and the
second peripheral region having an inclination angle becoming
smaller toward the inner part; causing measuring light to enter the
first peripheral region of the first main face from a direction
perpendicular to the first main region of the first main face;
detecting a non-emitting region where the measuring light is not
emitted from the second peripheral region of the second main face;
and detecting an edge of the transparent substrate on the basis of
the non-emitting region.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
[0011] FIG. 1 is a schematic view to explain an edge detection
method according to a first and a second embodiment of the
invention;
[0012] FIG. 2 is a schematic plan view showing the configuration of
a substrate to be processed according to the first and second
embodiments;
[0013] FIG. 3 is a detail view of a part of FIG. 1 according to the
first embodiment;
[0014] FIG. 4 is a view showing the inclination angle of a
peripheral region of a transparent substrate according to the first
embodiment;
[0015] FIG. 5 is a diagram showing the result of calculating a
region where total internal reflection takes place in the first
embodiment;
[0016] FIG. 6 is a diagram showing the result of calculating a
region where total internal reflection takes place in the first
embodiment;
[0017] FIG. 7 is a diagram for calculating the upper limit of the
inclination angle in the first embodiment; and
[0018] FIG. 8 is a detail view of a part of FIG. 1 in the second
embodiment of the invention.
DETAILED DESCRIPTION OF THE INVENTION
[0019] Hereinafter, referring to the accompanying drawings,
embodiments of the invention will be explained.
First Embodiment
[0020] FIG. 1 is a schematic view to explain an edge detection
method according to a first embodiment of the invention. FIG. 2 is
a schematic plan view showing the configuration of a substrate to
be processed shown in FIG. 1. FIG. 3 is a detail view of a part of
FIG. 1.
[0021] A substrate to be processed 100 is composed of a transparent
substrate 110, such as a glass substrate, and a semiconductor
substrate (or a semiconductor wafer) 120 provided on the
transparent substrate 110. On the semiconductor substrate 120, an
element region including active elements and interconnections is
provided. In the first embodiment, an image sensor (e.g., a CMOS
image sensor) including light-receiving elements and transistors is
formed in the element region. The transparent substrate 110 is for
securing the mechanical strength of the semiconductor substrate 120
and protecting the element region of the semiconductor substrate
120. The substrate 100 is placed on a stage 200 and can be rotated
by the rotation of the stage 200. While the substrate 100 is being
rotated, the edge position of the substrate 100 is detected,
thereby enabling the center position of the substrate 100 to be
determined.
[0022] On the side of a first main face 111 of the transparent
substrate 110, there is provided a light supplying part 300
composed of a light-emitting part and others. The light-supplying
part 300 supplies measuring light for detecting the edge of the
transparent substrate 110 to the first main face 111 of the
transparent substrate 110. On the side of a second main face 112 of
the transparent substrate 110, there is provided a light detecting
part 400 composed of a light-receiving part and others. The edge of
the transparent substrate 110 can be detected by detecting a dark
region where measuring light is not emitted from the second main
face 112 of the transparent substrate 110 (or non-emitting region).
Hereinafter, the principle of edge detection in the first
embodiment will be explained with reference to FIG. 3.
[0023] As shown in FIG. 3, the transparent substrate 110 has the
first main face 111, the second main face 112, and an end face 113.
The first main face 111 has a first main region 111a and a first
peripheral region 111b outside the first main region 111a. The
second main face 112 has a second main region 112a in parallel with
the first main region 111a and a second peripheral region 112b
outside the second main region 112a. Each of the first peripheral
region 111b and second peripheral region 112b has an oblique plane
(inclined surface) produced by a beveling process.
[0024] When the edge of the transparent substrate 110 is detected,
the measuring light 310 is caused to enter the first peripheral
region 111b of the first main face 111 from a direction
perpendicular to the transparent substrate 110. That is, the
measuring light 310 is caused to enter the first peripheral region
111b from a direction perpendicular to the first main region 111a
of the first main face 111 and the second main region 112a of the
second main face 112. The measuring light 310 is refracted at the
first peripheral region 111b and reaches the second peripheral
region 112b of the second main face 112. Here, the inclination
angle of each of the first peripheral region 111b and second
peripheral region 112b has been set so that the measuring light may
reflect totally at the second peripheral region 112b. As a result
of the total internal reflection, there appears a non-emitting
region where the measuring light is not emitted from the second
peripheral region 112b of the second main face 112, that is, a dark
region. On the basis of the dark region, the edge (or end face 113)
of the transparent substrate 110 can be detected. That is, the edge
of the transparent substrate 110 can be detected by detecting a
dark region with the light detecting part 400. When a CCD line
sensor where pixels are arranged in one direction is used as the
light detecting part 400, if a dark region is detected across not
less than a specific number of consecutive pixels, the edge is
assumed to have been detected. The place corresponding to the
boundary between the pixels detecting a bright region (bright
signal) and the pixels detecting a dark region (dark signal) is
detected as an edge.
[0025] Hereinafter, the inclination angle of each of the first
peripheral region 111b and second peripheral region 112b will be
explained with reference to FIG. 4. FIG. 4 shows the vicinity of
the edge of the transparent substrate 110.
[0026] As shown in FIG. 4, let the inclination angle of the first
peripheral region 111b (or the angle defined by the first main
region 111a and first peripheral region 111b of the first main
face) be .theta.a1 and the inclination angle of the second
peripheral region 112b (or the angle defined by the second main
region 112a and second peripheral region 112b of the second main
face) be .theta.a2. In addition, let the incident angle and output
angle of the measuring light to the first peripheral region 111b be
.theta.1 and .theta.2, respectively, and the incident angle and
output angle of the measuring light to the second peripheral region
112b be .theta.3 and .theta.4, respectively. Moreover, let the
refractive index of the transparent substrate 110 be n.
[0027] The refractive index n of the transparent substrate 110 is
expressed as:
n=sin .theta.4/sin .theta.3
[0028] When total internal reflection takes place, .theta.4=90
degrees. Accordingly, if the critical angle at the time when total
internal reflection takes place is .theta.c, it follows that
n=1/sin .theta.c
Accordingly, .theta.c=arcsin(1/n) (1)
[0029] The refractive index n of the transparent substrate 110 is
also expressed as:
n=sin .theta.1/sin .theta.2
[0030] Since the incident direction of the measuring light is
perpendicular to the first main region 111a, this gives
.theta.1=.theta.a1
[0031] Accordingly, it follows that
.theta.2=arcsin(sin .theta.a1/n) (2)
[0032] If the angle between the normal line of the first peripheral
region 111b and the normal line of the second peripheral region
112b is .theta.b, .theta.b is expressed as:
.theta.b=360-90-90-.theta.a1-.theta.a2 (3)
[0033] Here,
.theta.3=180-.theta.2-.theta.b (4)
[0034] Accordingly, from equation (3) and equation (4),
.theta.3=.theta.a1+.theta.a2-.theta.2 (5)
[0035] Substituting equation (2) into equation (5) gives:
.theta.3=.theta.a1+.theta.a2-arcsin(sin .theta.a1/n) (6)
[0036] If .theta.c.ltoreq..theta.3, total internal reflection will
take place. Accordingly, from equation (1) and equation (6), it
follow that
arcsin(1/n).ltoreq..theta.a1+.theta.a2-arcsin(sin .theta.a1/n)
(7)
[0037] Accordingly, the condition for the occurrence of total
internal reflection is:
n.times.sin(.theta.a1+.theta.a2-arcsin(sin .theta.a1/n)).gtoreq.1
(8)
[0038] Here, let the left side of expression (8) be an index value
A.
[0039] FIG. 5 shows the result of calculating a range where total
internal reflection takes place using expression (8). In FIG. 5,
the refractive index n of the transparent substrate 110 is 1.5. The
abscissa axis indicates a lower inclination angle (or inclination
angle .theta.a1 of the first peripheral region 111b). The ordinate
axis indicates an upper inclination angle (inclination angle
.theta.a2 of the second peripheral region 112b). The shaded regions
(a), (b), and (c) represent a range where total internal reflection
will take place.
[0040] FIG. 6 also shows the result of calculating a range where
total internal reflection takes place using expression (8).
However, FIG. 6 is based on the assumption that inclination angle
.theta.a1 of the first peripheral region 111b is equal to
inclination angle .theta.a2 of the second peripheral region 112b.
The abscissa axis indicates inclination angles .theta.a1 and
.theta.a2. The ordinate axis indicates the refractive index n of
the transparent substrate 110. The shaded regions (a), (b), and (c)
represent a range where total internal reflection will take
place.
[0041] As described above, in the first embodiment, each of the
first peripheral region 111b and second peripheral region 112b of
the transparent substrate 110 is configured to have an oblique
plane and both inclination angle .theta.a1 of the first peripheral
region 111b and inclination angle .theta.a2 of the second
peripheral region 112b are set so as to fulfill expression (8).
This enables the measuring light entering the first peripheral
region 111b to totally reflect at the second peripheral region
112b. As a result, the width of the non-emitting region (or dark
region) where the measuring light is not emitted from the second
peripheral region 112b can be increased sufficiently. Accordingly,
the dark region can be detected reliably and therefore the edge of
the transparent substrate can be detected reliably. Moreover, in
the first embodiment, setting inclination angles .theta.a1 and
.theta.a2 so as to fulfill expression (8) makes it unnecessary to
change the incident angle of the measuring light even if the
thickness or refractive index of the transparent substrate 110 has
changed and therefore make a complicated adjustment work.
Therefore, according to the first embodiment, the edge of the
transparent substrate can be detected easily and reliably by the
optical method.
[0042] From the viewpoint of ease of beveling, it is desirable that
inclination angle .theta.a1 of the first peripheral region 111b
should be made equal to inclination angle .theta.a2 of the second
peripheral region 112b and that the first peripheral region 111b
and second peripheral region 112b should be symmetrical vertically
with respect to the center plane of the transparent substrate 110.
However, inclination angle .theta.a1 may be different from the
inclination angle .theta.a2, provided that expression (8) is
fulfilled. In addition, either inclination angle .theta.a1 or
inclination angle .theta.a2 may be 0 degree. In this case, one of
the first peripheral region 111b and second peripheral region 112b
has no oblique plane, but can produce the same effect as described
above, provided that expression (8) is fulfilled.
[0043] Next, in the first embodiment, the upper limit of the
inclination angle .theta. (.theta.=.theta.a1=.theta.a2) will be
explained in a case where inclination angle .theta.a1 of the first
peripheral region 111b is equal to inclination angle .theta.a2 of
the second peripheral region 112b.
[0044] FIG. 7 shows typical dimensions of various parts to
calculate the upper limit of the inclination angle .theta.. The
transparent substrate has a standard thickness of 350 .mu.m. To
secure the mechanical strength at the peripheral part of the
transparent substrate, the thickness of the end face 113 is not
less than 1/2 of the thickness (350 .mu.m) of the transparent
substrate. The size of one pixel of the line sensor constituting
the light detecting part is 20 .mu.m. The condition for detecting
an edge is that a dark region is detected across not less than five
consecutive pixels, that is, the width of a dark region is not less
than 100 .mu.m.
[0045] Calculating the upper limit of the inclination angle .theta.
under the above condition gives
tan .theta.=87.5/100
[0046] Accordingly, it follows that
.theta.=arctan(87.5/100)=41.2 degrees
[0047] That is, the upper limit of the inclination angle .theta. is
preferably about 41 degrees.
Second Embodiment
[0048] Next, an edge detection method according to a second
embodiment of the invention will be explained. Since the basic
configuration and method are the same as those of the first
embodiment, what has been explained in the first embodiment will be
omitted.
[0049] FIG. 8 is a detail view of a part of FIG. 1. Hereinafter,
referring to FIG. 8, the principle of edge detection in the second
embodiment will be explained.
[0050] As shown in FIG. 8, a transparent substrate 110 has a first
main face 111 and a second main face 112. The first main face 111
has a first main region 111a and a first peripheral region 111b
outside the first main region 111a. The second main face 112 has a
second main region 112a in parallel with the first main region 111a
and a second peripheral region 112b outside the second main region
112a. The inclination of the first peripheral region 111b and that
of the second peripheral region 112b become gentler toward the
center of the transparent substrate 110. That is, the inclination
angle of the first peripheral region 111b and that of the second
peripheral region 112b become smaller toward the inner part of the
substrate. In the example of FIG. 8, each of the first peripheral
region 111b and second peripheral region 112b has a curved surface
as a result of beveling. The first peripheral region 111b and
second peripheral region 112b are symmetrical vertically with
respect to the center plane of the transparent substrate 110.
[0051] When the edge of the transparent substrate 110 is detected,
measuring light 310 is caused to enter the first peripheral region
111b of the first main face 111 from a direction perpendicular to
the transparent substrate 110 as in the first embodiment. That is,
the measuring light 310 is caused to enter the first peripheral
region 111b from a direction perpendicular to the first main region
111a of the first main face 111 and to the second main region 112a
of the second main face 112. The measuring light 310 is refracted
at the first peripheral region 111b and reaches the second
peripheral region 112b of the second main face 112. Since the
inclination of the second peripheral region 112b becomes gentler
toward the center of the substrate, total internal reflection can
be caused to take place in a wide range of the second peripheral
region 112b. As a result of the total internal reflection, a
non-emitting region where the measuring light is not emitted from
the second peripheral region 112b of the second main face 112, or a
dark region, is produced as in the first embodiment. On the basis
of the dark region, the edge (or end part) of the transparent
substrate 110 can be detected. That is, by detecting the dark
region with the light detecting part 400, the edge of the
transparent substrate 110 can be detected. When a CCD line sensor
composed of pixels arranged in one direction is used as the light
detecting part 400, if a dark region is detected across not less
than a specific number of pixels, the edge is assumed to have been
detected. The place corresponding to the boundary between the
pixels that have detected a bright region (bright signal) and the
pixels that have detected a dark region (dark signal) is detected
as an edge.
[0052] As described above, in the second embodiment, since the
inclination angle of each of the first peripheral region 111b and
second peripheral region 112b of the transparent substrate 110
becomes smaller toward the inner part of the substrate, the
thickness of the transparent substrate 110 at the peripheral part
can be secured sufficiently (or the mechanical strength can be
secure sufficiently) and total internal reflection can be caused to
take place in a wide range of the second peripheral region 112b. As
a result, the width of the non-emitting region (dark region) where
the measuring light is not emitted from the second peripheral
region 112b can be increased sufficiently, which enables the dark
region to be detected reliably. Even when the thickness or
refractive index of the transparent substrate 110 has changed, the
incident angle of the measuring light need not be changed and
therefore a complicated adjustment work need not be done.
Therefore, according to the second embodiment, the edge of the
transparent substrate can be detected easily and reliably by the
optical method.
[0053] While in the example of FIG. 8, each of the first peripheral
region 111b and second peripheral region 112b has a curved surface,
the shape of the curved surface is not limited. For example, the
curved surface may take various forms, including a circular form,
an elliptical form, and a hyperbolic form.
[0054] Additional advantages and modifications will readily occur
to those skilled in the art. Therefore, the invention in its
broader aspects is not limited to the specific details and
representative embodiments shown and described herein. Accordingly,
various modifications may be made without departing from the spirit
or scope of the general inventive concept as defined by the
appended claims and their equivalents.
* * * * *