U.S. patent application number 12/467889 was filed with the patent office on 2009-10-01 for structures and methods to enhance copper metallization.
Invention is credited to Paul A. Farrar.
Application Number | 20090243106 12/467889 |
Document ID | / |
Family ID | 23921827 |
Filed Date | 2009-10-01 |
United States Patent
Application |
20090243106 |
Kind Code |
A1 |
Farrar; Paul A. |
October 1, 2009 |
STRUCTURES AND METHODS TO ENHANCE COPPER METALLIZATION
Abstract
Disclosed structures and methods inhibit atomic migration and
related capacitive-resistive effects between a metallization layer
and an insulator layer in a semiconductor structure. One exemplary
structure includes an inhibiting layer between an insulator and a
metallization layer. The insulator includes a polymer or an
insulating oxide compound. And, the inhibiting layer has a compound
formed from a reaction between the polymer or insulating oxide
compound and a transition metal, a representative metal, or a
metalloid.
Inventors: |
Farrar; Paul A.; (So.
Burlington, VT) |
Correspondence
Address: |
SCHWEGMAN, LUNDBERG & WOESSNER/MICRON
P.O. BOX 2938
MINNEAPOLIS
MN
55402
US
|
Family ID: |
23921827 |
Appl. No.: |
12/467889 |
Filed: |
May 18, 2009 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11458195 |
Jul 18, 2006 |
7535103 |
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12467889 |
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10854552 |
May 26, 2004 |
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11458195 |
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10196081 |
Jul 16, 2002 |
7378737 |
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10854552 |
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09483869 |
Jan 18, 2000 |
6420262 |
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10196081 |
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Current U.S.
Class: |
257/751 ;
257/E23.161 |
Current CPC
Class: |
H01L 21/76859 20130101;
H01L 21/76843 20130101; H01L 21/76879 20130101; H01L 23/53228
20130101; H01L 21/76867 20130101; H01L 21/32051 20130101; H01L
21/76831 20130101; H01L 21/76825 20130101; H01L 21/7688 20130101;
H01L 2924/0002 20130101; H01L 21/76814 20130101; H01L 21/76823
20130101; H01L 21/76841 20130101; H01L 21/76874 20130101; H01L
23/5329 20130101; H01L 21/76873 20130101; H01L 21/76855 20130101;
H01L 21/76828 20130101; H01L 23/53238 20130101; H01L 23/53295
20130101; H01L 2924/0002 20130101; H01L 2924/00 20130101 |
Class at
Publication: |
257/751 ;
257/E23.161 |
International
Class: |
H01L 23/532 20060101
H01L023/532 |
Claims
1. A semiconductor structure comprising: an insulator layer having
a first substance, the first substance comprising a material
selected from a group consisting of a polymer and a foamed polymer;
an inhibiting layer on the insulator layer, wherein the inhibiting
layer includes a second substance, the second substance selected
from a group consisting of a transition metal and a representative
metal, the inhibiting layer including a compound formed by the
first substance and the second substance so as to inhibit undesired
atomic migration; and a copper metallization layer on the
inhibiting layer.
2. The semiconductor structure of claim 1, wherein the inhibiting
layer includes a transition metal that includes zirconium.
3. The semiconductor structure of claim 1, wherein the inhibiting
layer includes a layer of zirconium with a thickness of about 5
Angstroms to about 40 Angstroms.
4. The semiconductor structure of claim 1, wherein the inhibiting
layer includes a layer of zirconium with a thickness of about 10
Angstroms to about 30 Angstroms.
5. The semiconductor structure of claim 1, wherein the inhibiting
layer includes a layer of zirconium with a thickness of about 20
Angstroms.
6. The semiconductor structure of claim 1, wherein the inhibiting
layer includes a representative metal that includes aluminum.
7. The semiconductor structure of claim 1, wherein the inhibiting
layer includes a layer of aluminum with a thickness of about 5
Angstroms to about 40 Angstroms.
8. The semiconductor structure of claim 1, wherein the inhibiting
layer includes a layer of aluminum with a thickness of about 20
Angstroms to about 30 Angstroms.
9. The semiconductor structure of claim 1, wherein the inhibiting
layer includes a layer of aluminum with a thickness of about 20
Angstroms.
10. A semiconductor structure comprising: an insulator layer having
a first substance, the first substance comprising a material
selected from a group consisting of a polymer, a foamed polymer, a
fluorinated polymer, a fluorinated-foamed polymer, and an insulator
oxide compound; an inhibiting layer on the insulator layer, the
inhibiting layer including a second substance, the second substance
selected from a group consisting of a transition metal, a
representative metal, and a metalloid, the inhibiting layer
including a compound formed from a reaction between the first
substance and the second substance so as to inhibit undesired
atomic migration; and a copper metallization layer on the
inhibiting layer.
11. The semiconductor structure of claim 10, wherein the inhibiting
layer includes the compound formed by a reaction between the second
substance with the first substance to form an in situ barrier.
12. The semiconductor structure of claim 10, wherein the inhibiting
layer includes a layer of zirconium with a thickness of about 5
Angstroms to about 40 Angstroms.
13. The semiconductor structure of claim 10, wherein the inhibiting
layer includes a layer of zirconium with a thickness of about 10
Angstroms to about 30 Angstroms.
14. The semiconductor structure of claim 10, wherein the inhibiting
layer includes a layer of zirconium with a thickness of about 20
Angstroms.
15. The semiconductor structure of claim 10, wherein the inhibiting
layer includes a representative metal that includes aluminum.
16. The semiconductor structure of claim 10, wherein the inhibiting
layer includes a layer of aluminum with a thickness of about 5
Angstroms to about 40 Angstroms.
17. The semiconductor structure of claim 10, wherein the inhibiting
layer includes a layer of aluminum with a thickness of about 20
Angstroms to about 30 Angstroms.
18. The semiconductor structure of claim 10, wherein the inhibiting
layer includes a layer of aluminum with a thickness of about 20
Angstroms.
19. A semiconductor structure comprising: an insulator layer having
a first substance, the first substance comprising a material
selected from a group consisting of a foamed polymer and a
fluorinated polymer; an inhibiting layer on the insulator layer,
the inhibiting layer including a second substance, the second
substance selected from a group consisting of a representative
metal and a metalloid, the inhibiting layer including a compound
formed from a reaction between the first substance and the second
substance so as to inhibit undesired atomic migration; and a copper
metallization layer on the inhibiting layer.
20. The semiconductor structure of claim 19, wherein the material
includes a fluorinated-foamed polymer.
21. The semiconductor structure of claim 20, wherein the
fluorinated-foamed polymer includes fluorinated-foamed
polyimide.
22. The semiconductor structure of claim 19, wherein the inhibiting
layer includes a layer of aluminum with a thickness of about 5
Angstroms to about 40 Angstroms.
23. The semiconductor structure of claim 19, wherein the metalloid
includes boron.
24. The semiconductor structure of claim 19, wherein the
representative metal includes magnesium.
Description
[0001] This application is a Divisional application of U.S.
application Ser. No. 11/458,195, filed Jul. 18, 2006, which is a
Divisional of U.S. application Ser. No. 10/854,552, filed May 26,
2004, which is a Divisional of U.S. application Ser. No.
10/196,081, filed Jul. 16, 2002, now U.S. Pat. No. 7,378,737 which
is a Divisional of U.S. application Ser. No. 09/483,869, filed Jan.
18, 2000, now U.S. Pat. No. 6,420,262, all of which are
incorporated herein by reference.
RELATED APPLICATIONS
[0002] This application is related to the following commonly
assigned applications: U.S. Ser. No. 09/483,881 filed Jan. 18,
2000; U.S. Ser. No. 09/484,002 filed Jan. 18, 2000, now U.S. Pat.
No. 6,376,370; U.S. Ser. No. 09/488,098 filed Jan. 18, 2000, now
U.S. Pat. No. 6,429,120; U.S. Ser. No. 09/484,303 filed Jan. 18,
2000, all of which are incorporated herein by reference.
TECHNICAL FIELD
[0003] The technical field relates generally to semiconductor
structures. More particularly, it pertains to metallization layers
in semiconductor structures.
BACKGROUND
[0004] One of the main issues confronting the semiconductor
processing industry is that of the capacitive-resistance problem in
metallization layers. An industry-wide effort has undertaken to
address the problem. Since the beginning, the semiconductor
processing industry has relied on aluminum and aluminum alloys to
serve as metallization layers. Silicon dioxide was selected as the
insulator of choice although polyimide, a polymer, was used in a
number of products by IBM for a number of years. With each
succeeding generation of technology, the capacitive-resistance
problem grows. Because each generation requires that the dimensions
of the semiconductor structure be reduced, the minimum line-space
combination must also decrease. As the line-space combination
decreases, the capacitance and resistance of the semiconductor
structure increases. Thus, these increases contribute to the
problem.
[0005] Copper metallurgy has been proposed as a substitute for
aluminum metallurgy as a material for the metallization layers
since copper exhibits greater conductivity than aluminum. Yet
several problems have been encountered in the development of copper
metallurgy. The main issue is the fast diffusion of copper through
an insulator, such as silicon dioxide, to form an undesired copper
oxide compound. Another issue is the known junction-poisoning
effect of copper. These issues have led to the development of a
liner to separate the copper metallization layer from the
insulator. The use of titanium nitride as a liner was proposed by
C. Marcadal et al., "OMCVD Copper Process for Dual Damascene
Metallization," VMIC Conference Proceedings, p. 93-7 (1997). The
use of tantalum nitride as a liner was proposed by Peijun Ding et
al., "Copper Barrier, Seed Layer and Planarization Technologies,"
VMIC Conference Proceedings, p. 87-92 (1997). The use of titanium
as a liner was proposed by F. Braud et al., "Ultra Thin Diffusion
Barriers for Cu Interconnections at the Gigabit Generation and
Beyond," VMIC Conference Proceedings, p. 174-9 (1996). The use of
tungsten silicon nitride as a liner was proposed by T. Iijima et
al., "Microstructure and Electrical Properties of Amorphous
W--Si--N Barrier Layer for Cu Interconnections," VMIC Conference
Proceedings, p. 168-73 (1996). The use of zirconium, hafnium, or
titanium as a liner was proposed by Anonymous, "Improved Metallurgy
for Wiring Very Large Scale Integrated Circuits," International
Technology Disclosures, v. 4 no. 9, (Sep. 25, 1996). The use of
titanium as a liner was proposed by T. Laursen, "Encapsulation of
Copper by Nitridation of Cu--Ti Alloy/Bilayer Structures,"
International Conference on Metallurgical Coatings and Thin Films
in San Diego, Calif., paper H1.03 p. 309 (1997). The use of
tantalum, tungsten, tantalum nitride, or trisilicon tetranitride as
a liner is currently favored by the industry. See Changsup Ryu et
al., "Barriers for Copper Interconnections," Solid State
Technology, p. 53-5 (1999).
[0006] Yet another solution to the problem of fast diffusion of
copper through an insulator was proposed by researchers at
Rensselaer Polytechnic Institute (hereinafter, RPI). See S. P.
Muraka et al., "Copper Interconnection Schemes: Elimination of the
Need of Diffusion Barrier/Adhesion Promoter by the Use of Corrosion
Resistant, Low Resistivity Doped Copper," SPIE, v. 2335, p. 80-90
(1994) (hereinafter, Muraka); see also Tarek Suwwan de Felipe et
al., "Electrical Stability and Microstructural Evolution in Thin
Films of High Conductivity Copper Alloys," Proceedings of the 1999
International Interconnect Technology Conference, p. 293-5 (1999).
These researchers proposed to alloy copper with a secondary
element, which is either aluminum or magnesium. In their
experiments, they used copper alloys with at least 0.5 atomic
percent aluminum or 2 atomic percent magnesium. When the copper
alloy is brought near the insulator, silicon dioxide, the secondary
element and silicon dioxide form dialuminum trioxide or magnesium
oxide. The formed dialuminum trioxide or magnesium oxide acts as a
barrier to the fast diffusion of copper into the silicon
dioxide.
[0007] Along the same technique as proposed by RPI, Harper et al.
discuss in U.S. Pat. No. 5,130,274 (hereinafter, IBM) the use of a
copper alloy containing either aluminum or chromium as the
secondary element. As above, the secondary element with the
insulator, such as silicon dioxide or polyimide, forms a barrier to
the fast diffusion of copper.
[0008] Semiconductor products with some of the discussed solutions
to the fast diffusion of copper have begun to ship, on a limited
basis, and yet the problem of reducing the resistivity in ever
smaller line dimensions is still present. It has been shown by
Panos C. Andricacos, "Copper On-Chip Interconnections," The
Electrochemical Society Interface, pg. 32-7 (Spring 1999)
(hereinafter Andricacos), that the effective resistivity obtainable
by the use of barrier layers was approximately 2
microhm-centimeters with a line width greater than 0.3 micrometer.
The effective resistivity undesirably increases for lines narrower
than that. The alloy approach investigated by RPI had similar
resistivity values as found by Andricacos. RPI also found that the
use of 0.5 atomic percent aluminum, in the copper, was apparently
insufficient to give complete protection from copper diffusion into
the silicon dioxide although a significant reduction in the rate of
copper penetration through the silicon dioxide was achieved. It
should be noted that the maximum solubility of aluminum in copper
is 9.2 weight percent or approximately 18 atomic percent whereas
the maximum solubility of magnesium in copper is 0.61 weight
percent or approximately 0.3 atomic percent. Thus, the alloys used
by RPI were saturated with magnesium but far below the saturation
limit when aluminum was used as the secondary element in the
alloy.
[0009] Other researchers have focused on the capacitive effect. The
capacitive effect has been studied with respect to polymers, such
as polyimide, which are used to substitute for silicon dioxide as
insulation in semiconductor structures. Some of these polymers have
dielectric constants that are considerably lower than silicon
dioxide, and a presumption can be made that the use of these
polymers should lessen the undesired capacitive effect. Yet, when
one of these polymers is cured to form an insulator near the
vicinity of the copper metallization layer, the polymer reacts with
the copper metallization layer to form copper dioxide, a conductive
material. See D. J. Godbey et al., "Copper Diffusion in Organic
Polymer Resists and Inter-Level Dielectrics," Thin Solid Films, v.
308-9, p. 470-4 (1970) (hereinafter, Godbey). This conductive
material is dispersed within the polymer thereby effectively
raising the dielectric constant of the polymer and in many cases
even increasing its conductivity. Hence, the undesired capacitive
effect continues even with the use of lower dielectric polymer
materials.
[0010] Andricacos points out that the use of copper along with
cladding offers a significant improvement in conductivity over the
titanium/aluminum-copper alloy/titanium sandwich structure now in
widespread use throughout the industry. Andricacos also noted that
as the line width decreases even a thin liner would undesirably
effect the line resistance. The proposals by RPI and IBM attempt to
address this problem by forming the liner using a copper alloy. The
liner formed using a copper alloy displaces a portion of an area
that was occupied by the insulator.
[0011] However, in solving one problem, RPI and IBM introduce
another problem. The copper alloys used by RPI and IBM essentially
lack the desirable properties of copper that initially drove the
industry to use it. As was pointed out by RPI, the use of an alloy
containing aluminum, even at a concentration so low as to not be
completely effective in preventing the diffusion of copper, shows a
measurable increase in resistance. IBM used only one layer of the
alloy. Yet, that one layer has a high concentration of aluminum and
will undoubtedly have an undesired effect on the resistivity.
[0012] As the minimum dimensions shrink, the use of even a
twenty-Angstrom layer of an alloy with higher resistivity will have
a significant effect on the total resistivity of the conductor
composite. For example, a 200-Angstrom film on both sides of a 0.1
micron trench is 40 percent of the total trench width. Therefore,
at the same time that the dimensions of the metallization layer
decrease, the specific resistivity undesirably increases.
[0013] It has also been shown that there is a significant
difference between the amount of the undesired copper oxide
compound that is formed when a polyimide insulator is used if the
acidity of the polymer solution is low. This is the case if the
precursor used in the formation of the polyimide is an ester
instead of acid. In the case of PI-2701, which is a photosensitive
polyimide that starts from an ester precursor, the amount of oxide
formed is reduced by a factor of approximately four as compared to
films with a similar final chemistry. See Godbey. It is thought
that the slight acidity of PI-2701 may come from the photo-pac or
the process used to form it. The films in the study by Godbey were
all prepared by curing the liquid precursor in air or in an
approximately inert environment. It is also well known that copper
oxide will not form in and can be reduced by a high purity hydrogen
atmosphere.
[0014] Muraka opines that the use of titanium as a barrier layer
was found to increase the resistivity of the copper film
significantly when heat-treated at temperatures of 350 degrees
Celsius or above. If the heat-treatment was carried out in
hydrogen, no increase in resistivity was reported. As this
temperature is above the eutectoid temperature of the
titanium-hydrogen system, the formation of titanium hydride is
assumed to have occurred. Muraka also asserts that a similar
increase in resistivity is seen with zirconium and hafnium
containing copper alloys, yet Muraka provides no data to support
the assertion.
[0015] Other research results weaken the conclusion of Muraka. See
Saarivirta 1; see also U.S. Pat. No. 2,842,438 to Matti J.
Saarivirta and Alfred E. Beck (Jul. 8, 1958). If one looks at the
equilibrium phase diagrams of the copper-titanium and
copper-zirconium systems, it can be seen that the solubility of
zirconium in copper is more than ten times less than that of
titanium. See Metals Handbook, v. 8, p. 300-2 (8.sup.th Ed.). It
should also be noted that a series of copper-zirconium alloys have
been disclosed that have quite good electrical conductivity.
[0016] It has been shown that alloys containing more than about
0.01 weight percent zirconium have a significant loss of
conductivity in the as-cast state. See Matti J. Saarivirta, "High
Conductivity Copper-Rich Cu--Zr Alloys," Trans. of The
Metallurgical Soc. of AIME, v. 218, p. 431-7 (1960) (hereinafter,
Saarivirta 1). It has also been shown that the conductivity of even
a 0.23 weight percent zirconium alloy is restored to above 90
percent of IACS when the alloy, in the cold drawn state, is
heat-treated above 500 degrees Celsius for one hour. This shows
that a significant amount of the zirconium, which was in solid
solution in the as-cast state, has precipitated as pentacopper
zirconium. From this data, it can be seen that if the zirconium
content in the copper is kept low the conductivity of the resulting
metallurgy can be above 95 percent of IACS. If it is desired to
deposit a zirconium layer on top of a copper layer the temperature
of deposition of the zirconium should be kept below 450 degrees
Celsius, such as between 250 degrees Celsius and 350 degrees
Celsius. Such deposition may occur in a single damascene process or
at the bottom of vias in a dual-damascene process. The term "vias"
means the inclusion of contact holes and contact plugs. When the
deposition temperature is kept in this range, a thin layer of
pentacopper zirconium tends to form initially thus inhibiting the
diffusion of zirconium into the copper. While even at 450 degrees
Celsius the solubility is low enough to give very good
conductivity, and although zirconium and titanium have many
properties that are very similar, their solubility in copper
differs by more than a factor of ten. Therefore, the use of
zirconium is much preferred over titanium for this application.
[0017] What has been shown is the need of the semiconductor
processing industry to address the issue of interconnecting devices
in integrated circuits as these circuits get smaller with each
generation. Although aluminum was initially used as the metal for
interconnecting, copper has emerged as a metal of choice. However,
because of the fast diffusion of copper into the semiconductor
insulator, the capacitive-resistive problem becomes an important
issue that must be addressed. One solution is to use a liner, but
with the reduction in the geometry of the circuits, the dimensions
of the liner become inadequate to prevent the fast diffusion of
copper. Another solution is to form a barrier material from the
insulator and a copper alloy; this solution seems promising at
first, but because the copper is alloyed, the desirable
conductivity property of copper is diminished.
[0018] Thus, what is needed are structures and methods to inhibit
the fast diffusion of copper so as to enhance the copper
metallization layer in a semiconductor structure. The
above-mentioned problems with copper metallization layer as well as
other problems are addressed by the present invention and will be
understood by reading and studying the following specification.
Systems, devices, structures, and methods are described which
accord these benefits.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] FIG. 1 is a cross-sectional view of a semiconductor
structure according to one embodiment of the present invention.
[0020] FIGS. 2A-2F are cross-sectional views of a semiconductor
structure during processing according to one embodiment of the
present invention.
[0021] FIGS. 3A-3C are closed-up cross-sectional views of a
semiconductor structure during processing according to one
embodiment of the present invention.
[0022] FIG. 4 is a block diagram of a device according to one
embodiment of the present invention.
[0023] FIG. 5 is an elevation view of a semiconductor wafer
according to one embodiment of the present invention.
[0024] FIG. 6 is a block diagram of a circuit module according to
one embodiment of the present invention.
[0025] FIG. 7 is a block diagram of a memory module according to
one embodiment of the present invention.
[0026] FIG. 8 is a block diagram of a system according to one
embodiment of the present invention.
[0027] FIG. 9 is a block diagram of a system according to one
embodiment of the present invention.
[0028] FIG. 10 is a block diagram of a system according to one
embodiment of the present invention.
DETAILED DESCRIPTION
[0029] In the following detailed description of the invention,
reference is made to the accompanying drawings which form a part
hereof, and in which is shown, by way of illustration, specific
embodiments in which the invention may be practiced. In the
drawings, like numerals describe substantially similar components
throughout the several views. These embodiments are described in
sufficient detail to enable those skilled in the art to practice
the invention. Other embodiments may be utilized and structural,
logical, and electrical changes may be made without departing from
the scope of the present invention.
[0030] The terms wafer and substrate used in the following
description include any base semiconductor structure. Both are to
be understood as including silicon-on-sapphire (SOS) technology,
silicon-on-insulator (SOI) technology, thin film transistor (TFT)
technology, doped and undoped semiconductors, epitaxial layers of
silicon supported by a base semiconductor structure, as well as
other semiconductor structures well known to one skilled in the
art. Furthermore, when reference is made to a wafer or substrate in
the following description, previous process steps may have been
utilized to form regions/junctions in the base semiconductor
structure and layer formed above, and the terms wafer or substrate
include the underlying layers containing such regions/junctions and
layers that may have been formed above. The following detailed
description is, therefore, not to be taken in a limiting sense, and
the scope of the present invention is defined only by the appended
claims.
[0031] The embodiments described herein focus on the formation of
an inhibiting layer interposed between an insulator and a copper
metallization layer, which is not alloyed, so as to inhibit the
undesired diffusion of copper into the insulator.
[0032] FIG. 1 is a cross-sectional view of a semiconductor
structure according to one embodiment of the present invention.
Semiconductor structure 100 includes a substrate 199, and a number
of semiconductor device structures, such as devices 101A and 101B.
Devices 101A and 101B include active devices, such as transistors,
and passive devices, such as capacitors, or a combination of active
and passive devices. The semiconductor structure 100 optionally
includes a protective layer 102. In one embodiment, the protective
layer 102 includes silicon nitride, such as trisilicon
tetranitride. The purpose of the protective layer 102 includes
acting as a protective layer to prevent the metallization layer
from contacting the devices 101A and 101B. The semiconductor
structure 100 includes a number of contacts 107. The contacts 107
provide electrical connection to the devices 101A and 101B. In one
embodiment, the contacts 107 include a diffusion barrier, such as
titanium silicide layers 106A and 106B, and a plug, such as
tungsten layers 107A and 107B.
[0033] The semiconductor structure 100 includes an insulator layer
108. In one embodiment, the insulator layer 108 includes a
substance that comprises a material selected from a group
consisting of a polymer, a foamed polymer, a fluorinated polymer, a
fluorinated-foamed polymer, an aerogel, and an insulator oxide
compound. The polymer includes polyimide. The insulator oxide
compound includes silicon dioxide. The semiconductor structure
includes a copper seed layer 116 and a copper conductor layer 120.
The copper seed layer 116 and the copper conductor layer 120
constitute a portion of a copper metallization layer 197.
[0034] The semiconductor structure 100 includes an inhibiting layer
114. Without this inhibiting layer 114, the copper atoms of the
copper metallization layer 197 may diffuse into the insulator 108.
This diffusion changes the microstructure of a portion of the
semiconductor structure 100 and causes undesired
capacitive-resistive effects. The presence of the inhibiting layer
114 inhibits the capacitive-resistive effects. One of the
advantages of the inhibiting layer 114 over a liner is that the
inhibiting layer 114 scales with the geometry of the semiconductor
structure for each succeeding generation of technology. Another
advantage of the inhibiting layer 114 over a formation of a barrier
from a copper alloy is that the inhibiting layer 114 need not be
comprised from a material that is from the copper conductor layer
120. This leaves the copper conductor layer 120 to be completely
occupied by copper so as to enhance the electrical properties of
the metallization layer 197 of the semiconductor structure 100.
[0035] In one embodiment, the inhibiting layer 114 comprises a
compound formed from a reaction that includes the substance in the
insulator 108 and a second substance. The second substance is
selected from a group consisting of a transition metal, a
representative metal, and a metalloid. The transition metal is
selected from a group consisting of chromium, molybdenum, tungsten,
titanium, zirconium, hafnium, vanadium, niobium, and tantalum. The
representative metal includes elements from the alkaline earth
metal. The representative metal includes aluminum and magnesium.
The metalloid includes boron.
[0036] FIGS. 2A-2F are cross-sectional views of a semiconductor
structure during processing according to one embodiment of the
present invention. FIG. 2A illustrates a portion of a semiconductor
structure 200, such as an integrated circuit having a number of
semiconductor devices, such as devices 201A and 201B. The formation
of semiconductor devices, such as devices 201A and 201B, does not
limit the embodiments of the present invention, and as such, will
not be presented here in full. The devices 201A and 201B include
active devices, such as transistors, and passive devices, such as
capacitors, or a combination of active and passive devices.
[0037] The semiconductor structure 200 optionally includes a
protective layer 202. The protective layer 202 is deposited over
the substrate 299 and devices 201A and 201B. The deposition of the
protective layer 202 includes depositing a layer of a substance
that protects the devices 201A and 201B from subsequent conductive
semiconductor layers. In one embodiment, this substance includes a
nitride compound, such as silicon nitride. Silicon nitride includes
a substance such as trisilicon tetranitride (Si.sub.3N.sub.4). In
another embodiment, this layer of silicon nitride is deposited to a
thickness in the range of about 100 to about 500 Angstroms.
[0038] The semiconductor structure 200 includes a first insulator
layer 208. The first insulator layer 208 is deposited over the
protective layer 202 although in one embodiment, the first
insulator layer 208 may be formed before the formation of the
protective layer 202. In one embodiment, the first insulator layer
208 abuts the protective layer 202 after deposition. In one
embodiment, the first insulator layer 208 includes a first
substance that is selected from a group consisting of an organic
substance and an inorganic substance.
[0039] In one embodiment, the first substance of the first
insulator layer 208 includes an organic substance that includes a
material having a plurality of single-hydrocarbon molecules bonded
together. In another embodiment, the material comprises at least
two mers bonded together that have been treated so as to have a low
dielectric constant. In another embodiment, the material is
selected from a group consisting of a polymer, a foamed polymer, a
fluorinated polymer, and a fluorinated-foamed polymer. Since a
polymer includes polyimide, the material can be selected from a
group consisting of a polyimide, a foamed polyimide, a fluorinated
polyimide, and a fluorinated-foamed polyimide. In another
embodiment, the material can be selected from a group consisting of
DuPont PI-2801 material, a foamed DuPont PI-2801 material, a
fluorinated DuPont PI-2801 material, and a fluorinated-foamed
DuPont PI-2801 material. The material may be foamed, for example,
as described in U.S. Ser. No. 08/892,114, filed Jul. 14, 1997,
(attorney docket number 150.00530101), entitled "Method of Forming
Insulating Material for an Integrated Circuit and Integrated
Circuits Resulting From Same," which is hereby incorporated by
reference. In the embodiment that the material is a polyimide, the
first insulator layer 208 is cured after deposition, forming a
layer with a thickness of about 5000 Angstroms after curing. The
method of curing the first insulator layer 208 does not limit the
embodiments of the present invention, and as such, will not be
presented here in full.
[0040] In another embodiment, the first substance of the first
insulator layer 208 includes an inorganic substance that includes a
material selected from a group consisting of an aerogel and an
insulator oxide compound. The insulator oxide compound includes
silicon dioxide.
[0041] The hereinbefore and hereinafter discussions are
illustrative of one example of a portion of a fabrication process
to be used in conjunction with the various embodiments of the
invention. Other methods of fabrication are also included within
the scope of the embodiments of the present invention. For clarity
purposes, many of the reference numbers are eliminated from
subsequent drawings so as to focus on the portion of interest of
the semiconductor structure 200.
[0042] FIG. 2B shows the semiconductor structure following the next
sequence of processing. Vias 205A and 205B are opened to devices
201A and 201B using a photolithography technique. The term "vias"
means the inclusion of contact holes and contact plugs. A suitable
photolithography technique and an etching process can be chosen
without limiting the embodiments of the present invention, and as
such, it will not be presented here in full. In one embodiment, a
first contact material, such as titanium silicide layers 206A and
206B, is placed in the vias 205A and 205B, through a process such
as chemical vapor deposition (CVD). Next, a second contact
material, such as tungsten plugs 206A and 206B, can be deposited in
the vias 205A and 205B. The tungsten plugs 206A and 206B can be
deposited in the vias 205A and 205B using any suitable technique
such as a CVD process. The excess titanium silicide or tungsten can
be removed from the wafer surface by chemical mechanical
planarization (CMP) or other suitable processes to form a
planarized surface.
[0043] The first insulator layer 208 is patterned to define a
number of trenches, such as trench 210. The term "trench" means the
inclusion of lines for electrically interconnecting devices in a
semiconductor structure. In one embodiment, the first insulator
layer 208 has a first predetermined thickness and the trench 210
has a second predetermined thickness such that the second
predetermined thickness of the trench 210 is proportional to the
first predetermined thickness of the first insulator layer 208. The
trench 210 is located in the first insulator layer 208 so as to
open up the semiconductor structure 200 to a number of first level
vias, such as vias 205A and 205B. In other words, a first level
copper metallization layer pattern 210 is defined in a mask layer
of photoresist 212. Then, the first insulator layer 208 is etched,
using any suitable process, such as reactive ion etching (RIE),
such that the first level copper metallization layer pattern 210 is
defined in the first insulator layer 208. In one embodiment, a
residual photoresist layer 212 is left in place on the first
insulator layer 108 in a number of regions 213 outside of the
number trenches 210.
[0044] In one embodiment, the formation of vias 205A and 205B and
the trench 210 is made using a damascene technique, such as the
dual or triple damascene process. The structure is now as it
appears in FIG. 2B.
[0045] FIG. 2C shows the semiconductor structure following the next
sequence of processing. An inhibiting layer 214 is formed in the
trench 210. In one embodiment, the forming of the inhibiting layer
214 includes depositing a second substance using a technique
selected from a group consisting of low-energy implantation and
chemical-vapor deposition. The second substance is selected from a
group consisting of a transition metal, a representative metal, and
a metalloid. In addition to depositing the second substance, the
forming of the inhibiting layer 214 includes reacting the first
substance of the insulator layer 208 and the second substance to
form a compound so as to inhibit undesired atomic migration. In one
embodiment, the reacting process includes reacting to form an in
situ barrier. In another embodiment, the reacting process includes
an annealing process. In yet another embodiment, the reacting
process is accomplished prior to the completion of the
semiconductor structure 200.
[0046] In the embodiment that the second substance is a transition
metal, the second substance is selected from a group consisting of
chromium, molybdenum, tungsten, titanium, zirconium, hafnium,
vanadium, niobium, and tantalum. In the embodiment that the second
substance is a representative metal, the second substance includes
an alkaline earth metal. In another embodiment, in which the second
substance is a representative metal, the second substance includes
aluminum and magnesium. In the embodiment in which the second
substance is a metalloid, the second substance includes boron. In
the embodiment in which the second substance is either zirconium,
aluminum, or an alkaline earth metal, the second substance is
deposited with a thickness of about 5 Angstroms to about 40
Angstroms. In the embodiment in which the second substance is an
alkaline earth metal, the second substance includes magnesium.
[0047] In various embodiments, the depositing process of forming
the inhibiting layer 214 includes implanting the second substance
using a low-energy implantation technique with an implantation
energy of about 100 electron-volts to about 2000 electron-volts. In
various embodiments, the depositing process of forming the
inhibiting layer 214 includes depositing in a temperature of about
250 degrees Celsius to about 375 degrees Celsius. In another
embodiment, the temperature includes 325 degrees Celsius.
[0048] In various embodiments, the second substance is deposited
into the surfaces of the trench 210 using a depositing technique
where the angle of deposition 211 is varied about 3 degrees to
about 15 degrees from normal with respect to the surface of the
wafer. In other words, the angle is varied from normal with respect
to the planarized surface. In various embodiments, the angle of
implantation 211 is dependent on the height-to-width ratio of the
semiconductor structure.
[0049] In one embodiment, the first insulator layer 208 includes
the first substance selected from a polyimide or a foamed
polyimide, the second substance is selected from zirconium, and the
depositing of the second substance is a low-energy implantation
technique. Zirconium is implanted using a dose of about
5.times.10.sup.16 ions per square centimeter. The implantation
energy used is about 400 electron-volts to about 600
electron-volts. The angle of implantation 211 varies from about 5
degrees to about 10 degrees from normal with respect to the first
insulator layer 208. In one embodiment, zirconium is deposited with
a thickness of about 5 Angstroms to about 40 Angstroms. In another
embodiment, zirconium is deposited with a thickness of about 10
Angstroms to about 30 Angstroms. In another embodiment, zirconium
is deposited with a thickness of about 20 Angstroms. In this
embodiment, the reacting process of forming the compound of the
inhibiting layer includes reacting at a temperature of about 325
degrees Celsius to about 375 degrees Celsius. In one embodiment,
the time for the reacting process is from about 27 minutes to about
33 minutes. In one embodiment, the duration of the reacting process
is 30 minutes.
[0050] In one embodiment, the first insulator layer 208 includes
the first substance being selected from an insulator oxide
compound, the second substance being selected from aluminum, and
the depositing of the second substance being executed by a
low-energy implantation technique. Aluminum is implanted using a
dose of about 5.times.10.sup.16 ions per square centimeter. The
implantation energy used is about 400 electron-volts. The angle of
implantation 211 varies from about 5 degrees to about 10 degrees
from normal with respect to the first insulator layer 208. In one
embodiment, aluminum is deposited with a thickness of about 5
Angstroms to about 40 Angstroms. In another embodiment, aluminum is
deposited with a thickness of about 10 Angstroms to about 30
Angstroms. In another embodiment, aluminum is deposited with a
thickness of about 20 Angstroms. In this embodiment, the reacting
process of forming the compound of the inhibiting layer 214
includes reacting at a temperature of about 325 degrees Celsius to
about 375 degrees Celsius. In one embodiment, the duration for the
reacting process is from about 27 minutes to about 33 minutes. In
one embodiment, the duration of the reacting process is 30
minutes.
[0051] FIG. 2D shows the semiconductor structure following the next
sequence of processing. A first seed layer 216 is deposited on the
inhibiting layer 214 using a low-energy ion implantation. In one
embodiment, depositing the seed layer 216 on the inhibiting layer
214 includes depositing a copper seed layer 216. In one embodiment,
depositing the seed layer 216 includes depositing copper seed layer
216 having a thickness of about 100 Angstroms. This can be achieved
using an 8.times.10.sup.16 ion implantation of copper. In one
embodiment, the energy of implantation includes about 100
electron-volts. Additionally, the copper seed layer 216 is
implanted at an angle 215 normal to the planarized surface.
Implanting the copper seed layer 216 at an angle normal to the
planarized surface would result in the copper seed layer 216 being
parallel to a bottom surface 218 in the trench 210. The copper seed
layer 216 is deposited to a much lesser extent on the side surfaces
217 of the trench 210.
[0052] FIG. 2E shows the semiconductor structure following the next
sequence of processing. Returning briefly to FIG. 2D, the residual
photoresist layer 212 has served as a blocking layer to define the
implant areas for the inhibiting layer 214, and the copper seed
layer 216. In one embodiment, the residual photoresist layer 212 is
removed using a wet-strip process. In another embodiment, the
residual photoresist layer 212 is removed using a tape lift-off
technique. In yet another embodiment, the residual photoresist
layer 212 is removed using a tape lift-off technique in combination
with a wet-strip process. The tape lift-off technique In one
embodiment, removing the residual photoresist layer 212 includes
removing the unwanted copper seed layer 216, and the unwanted
inhibiting layer 214 from a portion of the surface of the wafer.
Such a portion of the surface of the wafer may include a number of
regions outside of the trench 210 near the vicinity of the top
surface 219. The semiconductor structure will now appear as shown
in FIG. 2E.
[0053] FIG. 2F shows the semiconductor structure following the next
sequence of processing. The semiconductor structure 200 includes a
copper metallization layer 220. The copper metallization layer 220
is selectively formed on the copper seed layer 216 in the trench
210. The copper metallization layer 220 includes copper as an
element in its composition. In one embodiment, the copper
metallization layer 220 is deposited using a selective CVD process.
In another embodiment, depositing the metallization layer 220
includes depositing a copper metallization layer 220 using
electroplating or electroless plating.
[0054] In the embodiment in which the second substance is
zirconium, the semiconductor structure 200 is heat-treated at about
250 degrees Celsius to about 350 degrees Celsius from about one to
about two hours after the electroplating of the copper.
[0055] The embodiments as described above in FIG. 2A to FIG. 2F may
be iterated to form any number of subsequent copper metallization
layers in a multi-layer wiring structure. The term "wiring
structure" means the inclusion of a contacting and interconnecting
structure in an integrated circuit so as to electrically connect
various devices together. The term "wiring structure" means the
inclusion of at least one copper metallization layer.
[0056] FIGS. 3A-3C are closed-up cross-sectional views of a
semiconductor structure during processing according to one
embodiment of the present invention. FIG. 3A shows a closed-up
cross-sectional view of a semiconductor structure 300 during
processing. Semiconductor structure 300 includes elements that are
similar to elements discussed in FIGS. 2A-2F. The discussion of
those elements that are similar and have an identical last-two
digit nomenclature is incorporated here in full.
[0057] FIG. 3A includes a trench 310 that is defined by the current
shape of protective layer 302, an insulator 308, and vias 305A and
305B. The insulator 308 includes a first substance. The trench 310
has been defined to begin the formation of a copper metallization
layer. In subsequent processing steps, the trench 310 may be filled
with copper to complete the formation of a copper metallization
layer. As discussed hereinbefore, the formation of a copper
metallization layer into the trench 310, without the various
embodiments of the present invention, may cause the undesired
diffusion of copper atoms into the insulator 308.
[0058] FIG. 3B shows the next sequence of processing. A layer of a
second substance is deposited abutting the insulator layer 308 and
the vias 305A and 305B. The second substance occupies a portion of
the trench 310.
[0059] FIG. 3C shows the next sequence of processing. An inhibiting
layer 314 is formed from the first substance of the insulator 308
and the second substance 398. This inhibiting layer 314 helps to
enhance the copper metallization layer. In one embodiment, because
the inhibiting layer 314 forms an integral part of the insulator
308, the inhibiting layer 314 is effective in inhibiting the
diffusion of the copper metallization layer. In another embodiment,
because the inhibiting layer 314 forms an integral part of the
semiconductor structure 300, it scales with each succeeding
generation of semiconductor processing technology so as to maintain
an effective inhibiting layer against the capacitive-resistive
effects. In another embodiment, because the inhibiting layer 314
occupies a portion of the space of the insulator 308 but not the
space of the trench 310, more of the space of the trench 310 can be
used for the deposition of copper. Thus, the metallization layer of
the described embodiments is enhanced.
[0060] FIG. 4 is a block diagram of a device according to one
embodiment of the present invention. The memory device 400 includes
an array of memory cells 402, address decoder 404, row access
circuitry 406, column access circuitry 408, control circuitry 410,
and input/output circuit 412. The memory device 400 can be coupled
to an external microprocessor 414, or memory controller for memory
accessing. The memory device 400 receives control signals from the
processor 414, such as WE*, RAS* and CAS* signals. The memory
device 400 is used to store data which is accessed via I/O lines.
It will be appreciated by those skilled in the art that additional
circuitry and control signals can be provided, and that the memory
device 400 has been simplified to help focus on the invention. At
least one of the memory cells has an inhibiting layer in accordance
with the aforementioned embodiments. In one embodiment, at least
one of the memory cells has a capacitor and at least one transistor
that are interconnected through a semiconductor structure in
accordance with the aforementioned embodiments.
[0061] It will be understood that the above description of a DRAM
(Dynamic Random Access Memory) is intended to provide a general
understanding of the memory and is not a complete description of
all the elements and features of a DRAM. Further, the invention is
equally applicable to any size and type of memory circuit and is
not intended to be limited to the DRAM described above. Other
alternative types of devices include SRAM (Static Random Access
Memory) or Flash memories. Additionally, the DRAM could be a
synchronous DRAM commonly referred to as SGRAM (Synchronous
Graphics Random Access Memory), SDRAM (Synchronous Dynamic Random
Access Memory), SDRAM II, and DDR SDRAM (Double Data Rate SDRAM),
as well as Synchlink or Rambus DRAMs and other emerging memory
technologies.
[0062] As recognized by those skilled in the art, memory devices of
the type described herein are generally fabricated as an integrated
circuit containing a variety of semiconductor devices. The
integrated circuit is supported by a substrate. Integrated circuits
are typically repeated multiple times on each substrate. The
substrate is further processed to separate the integrated circuits
into dies as is well known in the art.
[0063] FIG. 5 is an elevation view of a semiconductor wafer
according to one embodiment of the present invention. In one
embodiment, a semiconductor die 510 is produced from a wafer 500. A
die is an individual pattern, typically rectangular, on a substrate
that contains circuitry, or integrated circuit devices, to perform
a specific function. At least one of the integrated circuit devices
includes a memory cell as discussed in the various embodiments
heretofore in accordance with the invention. A semiconductor wafer
will typically contain a repeated pattern of such dies containing
the same functionality. Die 510 may contain circuitry for the
inventive memory device, as discussed above. Die 510 may further
contain additional circuitry to extend to such complex devices as a
monolithic processor with multiple functionality. Die 510 is
typically packaged in a protective casing (not shown) with leads
extending therefrom (not shown) providing access to the circuitry
of the die for unilateral or bilateral communication and control.
In one embodiment, at least two of the integrated circuit devices
are interconnected through a semiconductor structure as discussed
in the aforementioned embodiments.
[0064] FIG. 6 is a block diagram of a circuit module according to
one embodiment of the present invention. Two or more dies 610 may
be combined, with or without protective casing, into a circuit
module 600 to enhance or extend the functionality of an individual
die 610. Circuit module 600 may be a combination of dies 610
representing a variety of functions, or a combination of dies 610
containing the same functionality. One or more dies 610 of circuit
module 600 contain at least one of the semiconductor structure to
enhance a copper metallization layer in accordance with the
aforementioned embodiments of the present invention.
[0065] Some examples of a circuit module include memory modules,
device drivers, power modules, communication modems, processor
modules, and application-specific modules, and may include
multilayer, multichip modules. Circuit module 600 may be a
subcomponent of a variety of electronic systems, such as a clock, a
television, a cell phone, a personal computer, an automobile, an
industrial control system, an aircraft, and others. Circuit module
600 will have a variety of leads 612 extending therefrom and
coupled to the dies 610 providing unilateral or bilateral
communication and control.
[0066] FIG. 7 is a block diagram of a memory module according to
one embodiment of the present invention. Memory module 700 contains
multiple memory devices 710 contained on support 715, the number
depending upon the desired bus width and the desire for parity.
Memory module 700 accepts a command signal from an external
controller (not shown) on a command link 720 and provides for data
input and data output on data links 730. The command link 720 and
data links 730 are connected to leads 740 extending from the
support 715. Leads 740 are shown for conceptual purposes and are
not limited to the positions as shown. At least one of the memory
devices 710 includes a memory cell as discussed in various
embodiments in accordance with the invention.
[0067] FIG. 8 is a block diagram of a system according to one
embodiment of the present invention. Electronic system 800 contains
one or more circuit modules 802. Electronic system 800 generally
contains a user interface 804. User interface 804 provides a user
of the electronic system 800 with some form of control or
observation of the results of the electronic system 800. Some
examples of user interface 804 include the keyboard, pointing
device, monitor, or printer of a personal computer; the tuning
dial, display, or speakers of a radio; the ignition switch, gauges,
or gas pedal of an automobile; and the card reader, keypad,
display, or currency dispenser of an automated teller machine. User
interface 804 may further describe access ports provided to
electronic system 800. Access ports are used to connect an
electronic system to the more tangible user interface components
previously exemplified. One or more of the circuit modules 802 may
be a processor providing some form of manipulation, control, or
direction of inputs from or outputs to user interface 804, or of
other information either preprogrammed into, or otherwise provided
to, electronic system 800. As will be apparent from the lists of
examples previously given, electronic system 800 will often contain
certain mechanical components (not shown) in addition to circuit
modules 802 and user interface 804. It will be appreciated that the
one or more circuit modules 802 in electronic system 800 can be
replaced by a single integrated circuit. Furthermore, electronic
system 800 may be a subcomponent of a larger electronic system. At
least one of the circuit modules 802 includes at least an
integrated circuit that comprises at least two semiconductor
devices that are interconnected through a semiconductor structure
as discussed in various embodiments in accordance with the
invention.
[0068] FIG. 9 is a block diagram of a system according to one
embodiment of the present invention. Memory system 900 contains one
or more memory modules 902 and a memory controller 912. Each memory
module 902 includes at least one memory device 910. Memory
controller 912 provides and controls a bidirectional interface
between memory system 900 and an external system bus 920. Memory
system 900 accepts a command signal from the external bus 920 and
relays it to the one or more memory modules 902 on a command link
930. Memory system 900 provides for data input and data output
between the one or more memory modules 902 and external system bus
920 on data links 940. At least one of the memory devices 910
includes a memory cell that includes an inhibiting layer as
discussed in various embodiments in accordance with the
invention.
[0069] FIG. 10 is a block diagram of a system according to one
embodiment of the present invention. Computer system 1000 contains
a processor 1010 and a memory system 1002 housed in a computer unit
1005. The processor 1010 may contain at least two semiconductor
devices that are interconnected through a semiconductor structure
as described hereintofore. Computer system 1000 is but one example
of an electronic system containing another electronic system, e.g.,
memory system 1002, as a subcomponent. The memory system 1002 may
include a memory cell as discussed in various embodiments of the
present invention. Computer system 1000 optionally contains user
interface components. These user interface components include a
keyboard 1020, a pointing device 1030, a monitor 1040, a printer
1050, and a bulk storage device 1060. It will be appreciated that
other components are often associated with computer system 1000
such as modems, device driver cards, additional storage devices,
etc. It will further be appreciated that the processor 1010 and
memory system 1002 of computer system 1000 can be incorporated on a
single integrated circuit. Such single-package processing units
reduce the communication time between the processor and the memory
circuit.
CONCLUSION
[0070] Structures and methods have been described to address
situations where a metallization layer acts with an insulator layer
such that a capacitive-resistive effect arises. Such an effect is
inhibited by the embodiments of the present invention, and at the
same time, the metallization layer is enhanced. As described
heretofore, the inhibiting layer inhibits diffusion between copper
and an insulator layer. Such an inhibition layer is formed without
the need to use a copper alloy.
[0071] An illustrative embodiment includes a method for preparing a
copper wiring system for ultra-large-scale integrated circuits.
This copper wiring system has a high conductivity and low
capacitive loading.
[0072] Another illustrative embodiment includes a method for
constructing an insulator, such as an oxide compound or a polymer
structure. The insulator is made impervious to the copper, which is
not alloyed. Because the copper is not alloyed, the copper can have
as low a resistivity as possible depending on the method of
deposition and the resulting microstructure.
[0073] Another illustrative embodiment includes a method for
forming an enhanced metallization layer. The method comprises
forming an insulator layer having a first substance. The first
substance comprises a material selected from a group consisting of
a polymer, a foamed polymer, a fluorinated polymer, a
fluorinated-foamed polymer, and an oxide compound. The method
further comprises forming an inhibiting layer on the insulator
layer. The forming of the inhibiting layer includes depositing a
second substance on the insulator layer using a technique selected
from a group consisting of low-energy implantation and chemical
vapor deposition. The second substance is selected from a group
consisting of a transition metal, a representative metal, and a
metalloid. The process of forming the inhibiting layer includes
reacting the first substance and the second substance to form a
compound so as to inhibit undesired atomic migration. The method
further comprises forming a copper metallization layer on the
inhibiting layer.
[0074] Another illustrative embodiment includes a semiconductor
structure. The structure comprises an insulator layer having a
first substance. The first substance is selected from a group
consisting of a polymer, a foamed polymer, a fluorinated polymer, a
fluorinated-foamed polymer, an aerogel, and an insulator oxide
compound. The polymer includes polyimide. The insulator oxide
compound includes silicon dioxide. The semiconductor structure
includes an inhibiting layer on the insulator layer. The inhibiting
layer comprises a compound formed from a reaction that includes the
first substance and a second substance. The second substance is
selected from a group consisting of a transition metal, a
representative metal, and a metalloid. The transition is selected
from a group consisting of chromium, molybdenum, tungsten,
titanium, zirconium, hafnium, vanadium, niobium, and tantalum. The
representative metal is selected from a group consisting of
aluminum and magnesium. The metalloid includes boron. The
semiconductor structure also includes a copper metallization layer
on the inhibiting layer.
[0075] These and other embodiments, aspects, advantages, and
features of embodiments of the present invention are set forth in
part in the description herein, and in part will become apparent to
those skilled in the art by reference to the present description
and referenced drawings or by practice of the invention. The
aspects, advantages, and features of the invention are realized and
attained by means of the instrumentalities, procedures, and
combinations particularly pointed out in the appended claims.
[0076] Although the specific embodiments have been illustrated and
described herein, it will be appreciated by those of ordinary skill
in the art that any arrangement which is calculated to achieve the
same purpose may be substituted for the specific embodiments shown.
This application is intended to cover any adaptations or variations
of the present invention. It is to be understood that the above
description is intended to be illustrative, and not restrictive.
Combinations of the above embodiments and other embodiments will be
apparent to those of skill in the art upon reviewing the above
description. The scope of the invention includes any other
applications in which the above structures and fabrication methods
are used. Accordingly, the scope of the invention should only be
determined with reference to the appended claims, along with the
full scope of equivalents to which such claims are entitled.
* * * * *