U.S. patent application number 12/382400 was filed with the patent office on 2009-07-23 for thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate.
This patent application is currently assigned to HITACHI KOKUSAI ELECTRIC INC.. Invention is credited to Kenichi Ishiguro, Iwao Nakamura, Naoto Nakamura, Sadao Nakashima, Tomoharu Shimada.
Application Number | 20090186489 12/382400 |
Document ID | / |
Family ID | 32045734 |
Filed Date | 2009-07-23 |
United States Patent
Application |
20090186489 |
Kind Code |
A1 |
Nakamura; Naoto ; et
al. |
July 23, 2009 |
Thermal treatment apparatus, method for manufacturing semiconductor
device, and method for manufacturing substrate
Abstract
A thermal treatment apparatus, a method for manufacturing a
semiconductor device, and a method for manufacturing a substrate,
wherein the occurrence of slip dislocation in a substrate during
heat treatment is reduced, and a high-quality semiconductor device
can be manufactured, are intended to be provided. A substrate
support 30 is formed from a main body portion 56 and a supporting
portion 58. In the main body portion 56, a plurality of placing
portions 66 extend parallel, and supporting portions 58 are
provided on the placing portions 66. A substrate 68 is placed on
the supporting portion 58. The supporting portion 58 has a smaller
area than an area of a flat face of the substrate, and is formed
from a silicon plate having a thickness larger than thickness of
the substrate, so that deformation during heat treatment is
reduced. The supporting portion 58 is made of silicon, and a layer
coated with silicon carbide (SiC) is formed on a substrate-placing
face of the supporting portion 58.
Inventors: |
Nakamura; Naoto; (Toyama,
JP) ; Nakamura; Iwao; (Toyama, JP) ; Shimada;
Tomoharu; (Nagasaki, JP) ; Ishiguro; Kenichi;
(Toyama, JP) ; Nakashima; Sadao; (Toyama,
JP) |
Correspondence
Address: |
OLIFF & BERRIDGE, PLC
P.O. BOX 320850
ALEXANDRIA
VA
22320-4850
US
|
Assignee: |
HITACHI KOKUSAI ELECTRIC
INC.
Tokyo
JP
|
Family ID: |
32045734 |
Appl. No.: |
12/382400 |
Filed: |
March 16, 2009 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10528069 |
Jul 10, 2006 |
|
|
|
PCT/JP03/12353 |
Sep 26, 2003 |
|
|
|
12382400 |
|
|
|
|
Current U.S.
Class: |
438/770 ;
257/E21.211 |
Current CPC
Class: |
H01L 21/67306 20130101;
H01L 21/67098 20130101; H01L 21/67309 20130101 |
Class at
Publication: |
438/770 ;
257/E21.211 |
International
Class: |
H01L 21/30 20060101
H01L021/30 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 27, 2002 |
JP |
2002-282231 |
Feb 27, 2003 |
JP |
2003-051243 |
Feb 27, 2003 |
JP |
2003-051244 |
Claims
1. A thermal treatment method comprising: carrying a substrate into
a furnace; heat-treating the substrate by using an oxygen in the
furnace with the substrate being supported by a supporting portion
formed from a silicon plate-like member, a substrate-placing face
of the supporting portion, on which the substrate is placed, is
coated with an amorphous silicon oxide film; and carrying the
heat-treated substrate out of the furnace, wherein the amorphous
silicon oxide film coating the substrate-placing face of the
supporting portion is formed by the heat-treating.
2. A thermal treatment method according to claim 1, wherein a
thickness of the supporting portion is not less than twice a
thickness of the substrate and not more than 10 mm, a diameter of
the supporting portion is smaller than a diameter of the
substrate.
3. A thermal treatment method according to claim 2, wherein the
thickness of the supporting portion is from 3 mm to 10 mm.
4. A thermal treatment method according to claim 2, wherein the
diameter of the supporting portion is from 1/3 to of the diameter
of the substrate.
5. A thermal treatment method according to claim 2, wherein the
diameter of the supporting portion is 2/3 of the diameter of the
substrate.
6. A thermal treatment method according to claim 2, wherein the
heat-treating is performed with the supporting portion being
supported by a main body portion formed from a silicon carbide in
the furnace.
7. A thermal treatment method according to claim 2, wherein the
heat-treating is performed with the supporting portion being
supported by a plate, the plate is supported by a main body
portion, a diameter of the plate is larger than a diameter of the
supporting portion in the furnace.
8. A thermal treatment method according to claim 2, wherein the
heat-treating is performed with the supporting portion being
supported by a plate formed from a silicon carbide, the plate is
supported by a main body portion formed from a silicon carbide, a
diameter of the plate is larger than a diameter of the supporting
portion in the furnace.
9. A method for manufacturing a substrate, comprising: carrying a
substrate into a furnace; heat-treating the substrate by using an
oxygen in the furnace with the substrate being supported by a
supporting portion formed from a silicon plate-like member, a
substrate-placing face of the supporting portion, on which the
substrate is placed, is coated with an amorphous silicon oxide
film, a thickness of the supporting portion is not less than twice
a thickness of the substrate and not more than 10 mm, a diameter of
the supporting portion is smaller than a diameter of the substrate;
and carrying the heat-treated substrate out of the furnace, wherein
the amorphous silicon oxide film coating the substrate-placing face
of the supporting portion is formed by the heat-treating.
10. A method for manufacturing a SIMOX substrate, comprising:
implanting oxygen ions into a substrate; and heat-treating the
substrate into which the oxygen ions have been implanted in an
oxygen atmosphere with the substrate being supported by a
supporting portion formed from a silicon plate-like member, a
substrate-placing face of the supporting portion, on which the
substrate is placed, is coated with an amorphous silicon oxide
film, wherein the amorphous silicon oxide film coating the
substrate-placing face of the supporting portion is formed by the
heat-treating.
Description
[0001] This is a Continuation of application Ser. No. 10/528,069
filed Jul. 10, 2006, which in turn is a National Stage of
PCT/JP03/012353 filed Sep. 26, 2003, which claims the benefit of
Japanese Patent Application Nos. 2003-051244 filed Feb. 23, 2003
and 2002-282231 filed Sep. 27, 2002. The entire disclosure of the
prior applications is hereby incorporated by reference herein in
its entirety.
BACKGROUND
[0002] 1. Technical Field
[0003] The present invention relates to thermal treatment apparatus
for heat-treating a semiconductor wafer, glass substrate and the
like, a method for manufacturing a semiconductor device, and a
method for manufacturing a semiconductor wafer or a glass
substrate.
[0004] 2. Background Art
[0005] When a plural number of substrates such as silicon wafers
are heat-treated using, for example, a vertical heat treatment
furnace, a substrate support (boat) made of silicon carbide is
used. In the substrate support, for example, a supporting groove
for supporting a substrate at three points is provided.
[0006] In this case, there has been a problem that when the heat
treatment is performed at a temperature of about 1000.degree. C. or
more, slip dislocation occurs in the substrate near the supporting
groove, which may grow into a slip line. When the slip line occurs,
flatness of the substrate becomes worse. Therefore, there has been
a problem that misalignment of mask (misalignment of mask due to
defocusing or deformation) occurs in a lithography process that is
one of important processes in a LSI manufacturing process, and thus
manufacture of LSI having a desired pattern is difficult.
[0007] As means for solving such a problem, a technique is known,
wherein first, a dummy wafer is placed in the supporting groove,
and then a substrate to be treated is placed on the dummy wafer
(refer to patent literature 1). The technique intends that the
conventional three-point-support is changed to face-support using
the dummy wafer, thereby stress concentration by empty-weight of
the substrate to be processed is suppressed and thus warp of the
substrate is prevented, and thereby occurrence of the slip
dislocation is prevented.
[0008] As one of the substrate supports of this type, a boat
material such as Si--SiC, on which CVD-SiC coating is formed to
prevent impurity contamination from the material, is known (refer
to patent literature 2). According to the known example, the
CVD-SiC coating is 30 .mu.m to 100 .mu.m in thickness. That is,
when the thickness of the coating is less than 30 .mu.m, impurities
are diffused from the boat material to a surface of the coating,
therefore the object of the CVD coating, or prevention of impurity
diffusion by the coating, can not be achieved, and when the
thickness of the coating is more than 100 .mu.m, a padding
condition that CVD is concentratively deposited onto an edge
portion of the boat material occurs, and if the boat (substrate
support) is used in this condition, burrs are formed, causing
particle contamination.
[0009] As another conventional example, a substrate support is
known, wherein a SiC film is formed onto a base material such as
Si-impregnated sintered-SiC material or graphite by CVD method, so
that heat resistance, impact resistance, oxidation resistance, and
corrosion resistance are improved (refer to patent literature 3).
According to the known example, thickness of the SiC film is
preferably 20 .mu.m to 200 .mu.m, and when it is less than 20
.mu.m, since the SiC film itself is damaged, life of the film may
be reduced, and when it is more than 200 .mu.m, the SiC film is
easily separated.
[0010] As still another conventional example, a jig (boat and the
like) made of SiC is known, wherein the CVD-SiC coating is applied
on a surface of the jig, and a SiO.sub.2 film is formed on a
surface of the coating (refer to patent literature 4). It is shown
from the known example that the SiC coating is for securing
uniformity of a surface of the base material, and the thickness of
the SiC film is 100 .mu.m, as a practical example. Moreover, it is
shown that the SiO.sub.2 film is formed for preventing reduction in
thickness of the base material in dry cleaning using ClF.sub.3, and
thickness of the film is desirably 10 .ANG. to 100 .mu.m.
[0011] As still another conventional example, it is known that the
CVD-SiC is coated about 100 .mu.m on a surface of a support made of
Si--SiC (refer to patent literature 5).
[0012] [Patent literature 1] JP-A-2000-223495.
[0013] [Patent literature 2] JP-A-2000-164522.
[0014] [Patent literature 3] JP-A-2002-274983.
[0015] [Patent literature 4] JP-A-10-242254.
[0016] [Patent literature 5] JP-A-10-321543.
SUMMARY
[0017] However, according to results of experiments by the
inventor, although the above conventional examples where the
substrate is placed on the dummy wafer become better compared with
the example using the three-point-support, they are insufficient in
a point of preventing the slip dislocation because of occurrence of
the slip line.
[0018] It is considered that this is because since the dummy wafer
is thin like the substrate, for example 700 .mu.m thick, the dummy
wafer is deformed due to difference in thermal expansion generated
between the dummy wafer and a substrate support comprising silicon
carbide or other stress, and the slip dislocation occurs in the
substrate due to the deformation of the dummy wafer.
[0019] It is found from the results of the experiments by the
inventors of the application that in some material or thickness of
the film coated on a substrate-placing face of the supporting
portion of the substrate support, the slip may occur due to a
thermal expansion coefficient of the film and the like.
[0020] Thus, the invention intends to provide thermal treatment
apparatus, a method for manufacturing a semiconductor device, and a
method for manufacturing a substrate, wherein the slip dislocation
occurring in the substrate during heat treatment is reduced, and
thus a high-quality semiconductor device can be manufactured.
[0021] To solve the above problem, a first feature of the invention
is thermal treatment apparatus that performs heat treatment with a
substrate being supported by a substrate support, wherein the
substrate support has a main body portion and a supporting portion
which is provided on the main body portion and in contact with the
substrate, and the supporting portion comprises a silicon
platelike-member having a larger thickness than thickness of the
substrate. The thickness of the supporting portion is larger than
the thickness of the substrate, preferably 10 mm or less, for
example 3 mm to 6 mm, and more preferably 4 mm to 5 mm. When the
thickness of the supporting portion is compared to the thickness of
the substrate, preferably the thickness of the supporting portion
is at least twice the thickness of the substrate.
[0022] The substrate support can be configured as a boat where a
plurality of placing portions extend parallel from the body. The
body comprises, for example, silicon carbide. The supporting
portion may be in any shape that the substrate can be placed on one
end face of the portion, including cylinder, elliptic cylinder, and
polygonal cylinder. The supporting portion preferably has a larger
thickness than thickness of a placing portion of the main body.
[0023] A second feature of the invention is thermal treatment
apparatus that performs heat treatment with a substrate being
supported by a substrate support, wherein the substrate support has
a main body portion and a supporting portion which is provided on
the main body portion and in contact with the substrate, and the
supporting portion is made of silicon, and a substrate-placing face
of the supporting portion, on which the substrate is placed, is
coated with a film comprising one or a plural number of materials
of silicon carbide (SiC), silicon oxide (SiO.sub.2), silicon
nitride (Si.sub.3O.sub.4), glassy carbon, and microcrystalline
diamond.
[0024] The invention is an invention where the silicon
supporting-portion having the same hardness or thermal expansion
coefficient as the substrate is coated with an anti-adhesion film
such as silicon carbide film, and the objects, constitution, and
operation and effects of the invention are completely different
from the aforementioned conventional examples described in patent
literatures 2 to 5, wherein the supporting portion mainly comprises
silicon carbide, and silicon carbide and the like is coated
thereon.
[0025] When a silicon carbide film is coated, thickness of the film
is preferably 0.1 .mu.m to 50 .mu.m, more preferably 0.1 .mu.m to
15 .mu.m, and further preferably 0.1 .mu.m to 3 .mu.m.
[0026] When the thickness of the silicon supporting-portion and the
thickness of the silicon carbide film are shown in a ratio between
the two, the thickness of the silicon carbide film is preferably
0.0025% to 1.25% of the thickness of the silicon
supporting-portion, more preferably 0.0025% to 0.38%, and further
preferably 0.0025% to 0.25%.
[0027] For the film coated on the silicon supporting-portion, the
silicon nitride (Si.sub.3O.sub.4) can be used in addition to the
silicon carbide (SiC). When the silicon nitride film is used,
thickness of the film is preferably 0.1 .mu.m to 30 .mu.m, and more
preferably 0.1 .mu.m to 5 .mu.m.
[0028] A third feature of the invention is thermal treatment
apparatus that performs heat treatment with a substrate being
supported by the substrate support, wherein the substrate support
has a main body portion and a supporting portion which is provided
on the main body portion and in contact with the substrate, and the
supporting portion is made of silicon, and a plural number of
different films are stacked on a substrate-placing face of the
supporting portion, and hardness of an uppermost film is the lowest
in the plural number of films at heat treatment temperature, or the
uppermost film is amorphous.
[0029] Here, at least one of the plural number of stacked films
preferably comprises a material selected from the silicon carbide
(SiC), silicon nitride (SiN), polycrystalline silicon (Poly-Si),
silicon oxide (SiO.sub.2), glassy carbon, and microcrystalline
diamond. In this way, the material having high heat resistance is
stacked on the silicon supporting-portion, thereby adhesion between
the substrate and the supporting portion can be prevented.
[0030] The uppermost surface (face contacting to the substrate) of
the plural number of films preferably comprises a material having a
lower hardness than that of other films during heat treatment, such
as silicon oxide (SiO.sub.2).
[0031] It is further preferable that material of the uppermost
surface has hardness lower than that of other films and lower than
that of the substrate during heat treatment. The SiO.sub.2 of the
uppermost surface is preferably amorphous.
[0032] When two layers are formed as the stacked films, it is
preferable that one of them is a silicon carbide film, and an
uppermost film is a silicon oxide film.
[0033] The main body portion of the substrate support may comprise
silicon carbide (SiC).
[0034] While the substrate support may be a sheet-type one for
supporting a single substrate, it can be configured in a way that a
plural number of substrates are supported approximately
horizontally with a gap in a plural number of stages.
[0035] The thermal treatment apparatus can be used as thermal
treatment apparatus for treating the substrate at high temperature
of 1000.degree. C. or more, in addition, 1350.degree. C. or
more.
[0036] A fourth feature of the invention is the thermal treatment
apparatus that performs heat treatment with a substrate being
supported by a substrate support, wherein the substrate support has
a main body portion and a supporting portion which is provided on
the main body portion and in contact with the substrate, and the
supporting portion is made of silicon, and a silicon carbide (SiC)
film is formed on a substrate-placing face of the supporting
portion, and a silicon oxide (SiO.sub.2) film is formed on an
uppermost surface.
[0037] A fifth feature of the invention is thermal treatment
apparatus that performs heat treatment with a substrate being
supported by a substrate support, wherein the substrate support has
a main body portion and a supporting portion which is provided on
the main body portion and in contact with the substrate, and the
supporting portion is made of silicon, and a coating film is formed
on a substrate-placing face of the supporting portion, and hardness
of the coating film is lower than hardness of the substrate during
heat treatment at heat treatment temperature, or the coating film
is amorphous.
[0038] A sixth feature of the invention is a method for
manufacturing a substrate, comprising a process for carrying the
substrate into a treatment room; a process for supporting the
substrate by a supporting portion formed from a silicon
platelike-member having a larger thickness than thickness of the
substrate; a process for heat-treating the substrate in the
treatment room with the substrate being supported by the supporting
portion, and a process for carrying out the substrate from the
treatment room.
[0039] A seventh feature of the invention is a method for
manufacturing a substrate, comprising a process for carrying the
substrate into a treatment room; a process for supporting the
substrate by a silicon supporting-portion wherein a
substrate-placing face, on which the substrate is placed, is coated
with a film comprising one or a plural number of materials of
silicon carbide (SiC), silicon oxide (SiO.sub.2), glassy carbon,
and microcrystalline diamond; a process for heat-treating the
substrate in the treatment room with the substrate being supported
by the supporting portion; and a process for carrying out the
substrate from the treatment room.
[0040] A eighth feature of the invention is a method for
manufacturing a semiconductor device, comprising a process for
carrying a substrate into a treatment room; a process for
supporting the substrate by the supporting portion formed from a
silicon platelike-member having a larger thickness than thickness
of the substrate; a process for heat-treating the substrate in the
treatment room with the substrate being supported by the supporting
portion; and a process for carrying out the substrate from the
treatment room.
[0041] A ninth feature of the invention is a method for
manufacturing a semiconductor device, comprising a process for
carrying a substrate into a treatment room; a process for
supporting the substrate by a silicon supporting-portion wherein a
substrate-placing face, on which the substrate is placed, is coated
with a film comprising one or a plural number of materials of
silicon carbide (SiC), silicon oxide (SiO.sub.2), glassy carbon,
and microcrystalline diamond; a process for heat-treating the
substrate in the treatment room with the substrate being supported
by the supporting portion; and a process for carrying out the
substrate from the treatment room.
BRIEF DESCRIPTION OF THE DRAWINGS
[0042] FIG. 1 is a perspective view showing thermal treatment
apparatus according to an embodiment of the invention;
[0043] FIG. 2 is a cross section view showing a reactor used in the
thermal treatment apparatus according to the embodiment of the
invention;
[0044] FIG. 3 is a cross section view showing a substrate support
used in the thermal treatment apparatus according to the embodiment
of the invention;
[0045] FIG. 4 is an expanded section view of the substrate support
used in the thermal treatment apparatus according to the embodiment
of the invention;
[0046] FIG. 5 is an expanded plan view of the substrate support
used in the thermal treatment apparatus according to the embodiment
of the invention;
[0047] FIG. 6 is a cross section view showing a first modification
of the substrate support used in the thermal treatment apparatus
according to the embodiment of the invention;
[0048] FIG. 7 shows a second modification of the substrate support
used in the thermal treatment apparatus according to the embodiment
of the invention, wherein (a) is a plan view, and (b) is a cross
section view along a line A-A of (a);
[0049] FIG. 8 shows a third modification of the substrate support
used in the thermal treatment apparatus according to the embodiment
of the invention, wherein (a) is a plan view, and (b) is a cross
section view along a line B-B of (a);
[0050] FIG. 9 is a cross section view showing a fourth modification
of the substrate support used in the thermal treatment apparatus
according to the embodiment of the invention;
[0051] FIG. 10 is a cross section view showing various
modifications of the supporting portion;
[0052] FIG. 11 is a cross section view showing a substrate support
used in thermal treatment apparatus according to another embodiment
of the invention; and
[0053] FIG. 12 is a diagram showing temperature change during
treating a substrate in the embodiment of the invention.
DETAILED DESCRIPTION OF EMBODIMENTS
[0054] Next, embodiments of the invention are described according
to drawings.
[0055] FIG. 1 shows thermal treatment apparatus 10 according to an
embodiment of the invention. The thermal treatment apparatus 10 is,
for example, vertical-type apparatus, and has a chassis 12 in which
major parts of the apparatus are disposed. The chassis 12 is
connected with a pod stage 14, and a pod 16 is carried onto the pod
stage 14. The pod 16 receives, for example, 25 substrates, and is
set on the pod stage 14 with a not-shown cap being closed.
[0056] In the chassis 12, a pod-carrying device 18 is disposed at a
position opposed to the pod stage 14. Near the pod-carrying device
18, a pod shelf 20, a pod opener 22, and a sensor 24 of the number
of substrates are disposed. The pod-carrying device 18 carries the
pod 16 among the pod stage 14, pod shelf 20 and pod opener 22. The
pod opener 22 is for opening the cap of the pod 16, and the number
of substrates in the pod 16 with the cap being opened is sensed by
the sensor 24 of the number of substrates.
[0057] Furthermore, a substrate transfer device 26, notch aligner
28 and substrate support 30 (boat) are disposed in the chassis 12.
The substrate transfer device 26 has an arm 32 which can take out,
for example, five substrates, and the substrates are carried among
the pod placed at a position of the pod opener 22, notch aligner 28
and substrate support 30 by moving the arm 32. The notch aligner 28
detects a notch or an orientation-flat formed in the substrate, and
arranges the notch or the orientation-flat in the substrate to a
regular position.
[0058] FIG. 2 shows a reactor 40. The reactor 40 has a reactor tube
42, and a substrate support 30 is inserted into the reactor tube
42. A bottom area of the reactor tube 42 is opened for inserting
the substrate support 30, and the opened area is sealed by a seal
cap 44. Periphery of the reactor tube 42 is covered by a soaking
tube 46, and a heater 48 is disposed around the soaking tube 46. A
thermocouple 50 is disposed between the reactor tube 42 and the
soaking tube 46, so that temperature in the reactor 40 can be
monitored. The reactor tube 42 is connected with a introduction
tube 52 for introducing treatment gas and an exhaust pipe 54 for
exhausting the treatment gas.
[0059] Next, operation of the thermal treatment apparatus 10
configured as above is described.
[0060] First, when the pod 16 which has received a plural number of
substrates is set on the pod stage 14, the pod 16 is carried from
the pod stage 14 to the pod shelf 20 by the pod-carrying device 18,
and stocked in the pod shelf 20. Next, the pod 16 stocked in the
pod shelf 20 is carried and set onto the pod opener 22 by the
pod-carrying device 18, and the cap of the pod 16 is opened by the
pod opener 22, and then the number of substrates received in the
pod 16 is sensed by the sensor 24 of the number of substrates.
[0061] Next, a substrate is taken out from the pod 16 located at a
position of the pod opener 22 by the substrate transfer device 26,
and transferred to the notch aligner 28. In the notch aligner 28,
the notch is detected with the substrate being rotated, and the
notches in the substrates are aligned to a fixed position according
to the detected data. Next, the substrates are taken out from the
notch aligner 28 by the substrate transfer device 26 and
transferred to the substrate support 30.
[0062] In this way, after one batch of substrates are transferred
to the substrate support 30, the substrate support 30 loaded with
the substrates is charged into the reactor 40 in which temperature
has been set to, for example, 700.degree. C., and then the reactor
tube 42 is sealed by the seal cap 44. Next, furnace temperature is
increased to heat treatment temperature, and then the treatment gas
is introduced through the introduction tube 52. The treatment gas
includes nitrogen, argon, hydrogen, and oxygen. When the substrate
is heat-treated, the substrate is heated to, for example, about
1000.degree. C. or more. In this period, the heat treatment of the
substrate is performed according to previously established programs
of heating and heat treatment with monitoring temperature in the
reactor tube 42 using the thermocouple 50.
[0063] When the heat treatment of the substrate is finished, the
furnace temperature is lowered to about 700.degree. C., and then
the substrate support 30 is unloaded from the reactor 40, and the
substrate support 30 is made to wait at a predetermined position
until all substrates supported by the substrate support 30 are
cooled. Again in lowering the furnace temperature, the cooling is
performed according to a previously established cooling program
with monitoring the temperature in the reactor tube 42 using the
thermocouple 50. Next, when the substrates waiting in the substrate
support 30 are cooled to the predetermined temperature, the
substrates are taken out from the substrate support 30 by the
substrate transfer device 26, and carried and received into an
empty pod 16 set on the pod opener 22. Next, the pod 16 receiving
the substrates are carried into the pod shelf 20 by the pod
transfer device 18, and finally transferred onto the pod stage
14.
[0064] Next, the substrate support 30 is described in detail.
[0065] In FIG. 3 to FIG. 5, the substrate support 30 is formed from
a main body portion 56 and a supporting portion 58. The main body
portion 56 comprises, for example, silicon carbide, and has an
upper plate 60, a lower plate 62, and a pole 64 for connecting
between the upper plate 60 and the lower plate 62. In the main body
portion 56, a plurality of placing portions 66 extending from the
pole 64 to a side of the substrate transfer device 26 are formed
parallel.
[0066] The supporting portion 58 comprises a silicon
platelike-member, and is formed in the shape of a cylinder
concentric with a substrate 68, and the supporting portion 58 is
placed on the placing portion 66 in a condition that a bottom of
the supporting portion 58 is in contact with a top of the placing
portion 66, and the substrate 68 is placed and supported on the
supporting portion 58 in a condition that a bottom of the substrate
68 is in contact with a top of the supporting portion 58.
[0067] The supporting portion 58 has a smaller diameter than
diameter of the substrate 68, that is, the top of the supporting
portion 58 has a smaller area than an area of a flat face as the
bottom of the substrate 68, and the substrate 68 is supported by
the supporting portion 58 with periphery of the substrate 68 being
left. Diameter of the substrate 68 is, for example, 300 mm,
therefore diameter of the supporting portion 58 is less than 300
mm, and preferably about 100 mm to 250 mm (about 1/3 to of outer
diameter of the substrate).
[0068] The diameter (area) of the supporting portion 58 can be
larger than the diameter (area) of the substrate 68. In this case,
thickness of the supporting portion 58 is preferably increased.
[0069] Thickness in a cylinder-axis direction of the supporting
portion 58 is formed larger than thickness of the substrate 68. The
thickness of the substrate 68 is, for example, 700 .mu.m, therefore
the thickness of the supporting portion 58 is more than 700 .mu.m,
and may be 10 mm at maximum, and preferably twice the thickness of
the substrate 68 or more, for example 3 mm to 10 mm, more
preferably 3 mm to 6 mm, and further preferably 4 mm to 5 mm. The
thickness of the supporting portion 58 is larger than the thickness
of the placing portion 66. The reason for making the thickness of
the substrate 68 to be such thickness is to increase rigidness of
the supporting portion 58 itself and suppress deformation of the
supporting portion 58 during heat treatment.
[0070] If the deformation during heat treatment can be suppressed,
the thickness of the silicon supporting-portion 58 is not
necessarily formed to be larger than thickness of the substrate
68.
[0071] As shown in FIG. 6, it is acceptable that a circular fitting
groove 74 is formed in the placing portion 66 corresponding to the
supporting portion 58, and the supporting portion 58 is fitted in
the fitting groove 74. The total thickness of the supporting
portion 58 and the placing portion 66 can be reduced without
reducing the thickness of the supporting portion 58, thereby the
number of substrates 68 to be treated at a time can be increased.
In addition, the supporting portion 58 is fitted in the fitting
groove 74, thereby a position of the supporting portion 58 can be
stabilized. In this case, a slight gap may be formed between the
supporting portion 58 and the fitting groove 74 in consideration of
thermal expansion.
[0072] Moreover, as shown in FIG. 7, it is acceptable that an
opening 66a is provided in the placing portion 66, a convex portion
58a fitted in the opening 66a is provided on the bottom of the
supporting portion 58, and the convex portion 58a on the supporting
portion 58 is fitted in the opening 66a in the placing portion 66.
In the invention, a member having such a shape is assumed to be
included in the platelike member. Again in this case, it is better
that the slight gap is formed between the convex portion 58a on the
supporting portion 58 and the opening 66a in the placing portion 66
in consideration of thermal expansion.
[0073] The shape of the supporting portion 58 need not be
cylindrical unlike the embodiment, and can be configured as an
elliptic cylinder or a polygonal cylinder. The supporting portion
58 can be fixed to the placing portion 66.
[0074] An anti-adhesion layer (coated film) 70 is formed on the top
(substrate-placing face) of the supporting portion 58 at a side of
the substrate 68. The anti-adhesion layer 70 comprises a material
having excellent heat resistance and wear resistance, including a
silicon nitride (Si.sub.3N.sub.4) film, a silicon carbide (SiC)
film, a silicon oxide (SiO.sub.2) film, glassy carbon, and
microcrystalline diamond, which are formed by surface treatment of
the silicon, or by depositing the material on the surface of the
silicon using CVD (plasma CVD or thermal CVD) and the like, so that
adhesion between the supporting portion 58 and the substrate 68 is
prevented after treatment of the substrate 68. When the
anti-adhesion layer 70 comprises the silicon carbide (SiC) film,
thickness of the film is preferably in a range of 0.1 .mu.m to 50
.mu.m. When the thickness of the silicon carbide film 70 is
increased, the silicon supporting-portion 58 is stretched by the
silicon carbide film 70 due to difference in coefficients of
thermal expansion between silicon and silicon carbide, thereby
deformation level of the supporting portion as a whole becomes
large, and slip may occur in the substrate 68 due to the large
deformation. On the contrary, when the silicon carbide film 70 has
the thickness as above, the stretched level of the silicon
supporting-portion 58 by the silicon carbide film 70 is reduced,
resulting in decrease in deformation level of the supporting
portion as a whole. That is, when the thickness of the silicon
carbide film 70 is decreased, stress due to the difference in
coefficients of thermal expansion between the supporting portion 58
and the film 70 is reduced, and the deformation level of the
supporting portion as a whole is reduced, in addition, the thermal
expansion coefficient of the supporting portion as a whole
approaches the original thermal expansion coefficient of silicon
(approximately equal thermal expansion coefficient of the substrate
68 when the substrate comprises silicon), and consequently
occurrence of the slip can be prevented.
[0075] When the thickness of the silicon carbide film 70 is less
than 0.1 .mu.m, the silicon carbide film 70 wears because of
excessively small thickness of the film, therefore the silicon
carbide needs to be recoated on the silicon supporting-portion 58,
and one supporting portion 58 can not be repeatedly used. When the
thickness of the silicon carbide film 70 is 0.1 .mu.m or more, the
silicon carbide film 70 need not be frequently recoated on the
silicon supporting-portion 58, and one supporting portion 58 can be
repeatedly used. The silicon carbide film 70 having a thickness of
1 .mu.m or more is preferable, because the wear of the film is
further reduced, and the number of repeatable use of one supporting
portion 58 is further increased.
[0076] When the thickness of the silicon carbide film 70 is more
than 50 .mu.m, the silicon carbide film 70 itself is easily
cracked, and the slip is easy to occur in the substance due to the
crack. When the thickness of the film 70 is 50 .mu.m or less, the
crack in the film 70 is hard to occur, and the stress due to the
difference in coefficients of thermal expansion between the silicon
supporting-portion 58 and the silicon carbide film 70 is reduced as
above, therefore the deformation of the supporting portion as a
whole is reduced, consequently the occurrence of the slip in the
substrate can be prevented. When the thickness of the silicon
carbide film is 15 .mu.m or less, the slip in the substrate is hard
to occur. Furthermore, when the thickness of the silicon carbide
film 70 is 0.1 .mu.m to 3 .mu.m, the slip in the substrate 68 does
not occur. Accordingly, the thickness of the silicon carbide film
70 is preferably 0.1 .mu.m to 50 .mu.m, more preferably 0.1 .mu.m
to 15 .mu.m, and further preferably 0.1 .mu.m to 3 .mu.m.
[0077] When the thickness of the silicon supporting-portion 58 and
the thickness of the silicon carbide film 70 are shown in a ratio
between the two, the thickness of the silicon carbide film 70 is
preferably 0.0025% to 1.25% of the thickness of the silicon
supporting-portion 58, more preferably 0.0025% to 0.38%, and
further preferably 0.0025% to 0.25%.
[0078] The film 70 can be also formed by coating the silicon
nitride (Si.sub.3N.sub.4) in addition to the silicon carbide using
the plasma CVD or the thermal CVD. When the film is formed from the
silicon nitride, the thickness of the film 70 is preferably 0.1
.mu.m to 30 .mu.m, and more preferably 0.1 .mu.m to 5 .mu.m.
[0079] Periphery of the top of the supporting portion 58 is
smoothly chamfered and thus a concave portion 72 is formed. The
concave portion 72 prevents production of flaw and the like in the
substrate 68 by the substrate 68 contacting to the periphery of the
supporting portion 58.
[0080] Although the anti-adhesion layer 70 is formed on the entire
surface of the supporting portion 58, as shown in FIG. 8, it is
acceptable that chips 76 comprising those materials are placed on a
part of the substrate-placing face of the supporting portion 58,
and the substrate 68 is supported by the chips 76. In this case,
three chips 76 or more are preferably provided.
[0081] As shown in FIG. 9, a concentric groove 78 is formed near
the periphery of the supporting portion 58 to decrease an area
contacting to the substrate 68, thereby possibility of the flaw
produced by the substrate 68 contacting to the supporting portion
58 can be reduced, and shift of the substrate 68 can be
prevented.
[0082] In the embodiment, since the thickness of the supporting
portion 58 is a predetermined thickness larger than the thickness
of the substrate 68 as above, rigidness of the supporting portion
58 can be increased, the deformation of the supporting portion 58
with temperature change during carrying-in of the substrate,
heating, cooling, heat treatment, carrying-out of the substrate and
the like can be suppressed. Accordingly, the slip occurring in the
substrate 68 due to the deformation of the supporting portion 58
can be prevented. Moreover, since the material of the supporting
portion 58 is made of silicon that is the same material as the
substrate 68, that is, since a material having the same thermal
expansion coefficient or hardness as the substrate 68 made of
silicon is used, difference in thermal expansion or thermal
contraction between the substrate 68 and the supporting portion 58
with temperature change can be eliminated, and even if stress is
generated at a contact point between the substrate 68 and the
supporting portion 58, the stress is easily released, therefore the
substrate 68 is hardly flawed. Accordingly, the slip occurring in
the substrate 68 due to the difference in coefficients of thermal
expansion or hardness between the substrate 68 and the supporting
portion 58 can be prevented.
[0083] While a case that the diameter (area) of the supporting
portion is smaller than that of the substrate was described in the
embodiment and example, the diameter of the supporting portion can
be larger than that of the substrate. In this case, the thickness
of the supporting portion 58 needs to be further increased to
secure the rigidness of the supporting portion 58.
[0084] Since the supporting portion 58 is coated with the
anti-adhesion film 70 such as silicon carbide film, adhesion due to
heat generated between the supporting portion 58 and the substrate
68 can be prevented. Since the film 70 is formed to have small
thickness as above, the stress due to the difference in
coefficients of thermal expansion between the supporting portion 58
and the film 70 can be reduced, and the thermal expansion
coefficient of the entire supporting portion including the film 70
can be maintained to be approximately equal to the original thermal
expansion coefficient of silicon without having an adverse
influence upon the thermal expansion coefficient of the silicon
supporting-portion 58. The film 70 may be coated on a back or sides
of the supporting portion 58.
[0085] In FIG. 10, various modifications on the supporting portion
58 are shown.
[0086] Although the film 70 was formed only on the
substrate-placing face of the supporting portion 58 in the above
embodiment, as shown in FIG. 10(a), the film 70 may be formed on
the supporting portion 58 as a whole, that is, it may be formed on
the front (substrate-placing face), sides and back of the
supporting portion 58.
[0087] As shown in FIG. 10(b), the film 70 can be formed on the
front (substrate-placing face) and sides of the supporting portion
58 except for the back of the supporting portion 58.
[0088] Moreover, the film 70 is not limited to a single layer, and
may be formed as multiple layers, for example as shown in FIG.
10(C), a second film 82 can be formed on a first film 80. The first
film 80 comprises, for example, the silicon carbide (SiC), silicon
nitride (Si.sub.3N.sub.4), polycrystalline silicon (Poly-Si),
silicon oxide (SiO.sub.2), glassy carbon, or microcrystalline
diamond. When the film is formed from the silicon carbide or the
silicon nitride, it can be formed using the plasma CVD or the
thermal CVD as described before. The second film 82 can be formed
from a material having lower hardness than that of the first film
70 during heat treatment, for example, silicon oxide (SiO.sub.2).
Thus, the second film 82 that is the uppermost surface comprises
the material having the lower hardness than that of the first film
70 during heat treatment, thereby when the stress is generated at
the contact point between the substrate 68 and the supporting
portion 58 during high-temperature heat treatment, the stress is
easily released, therefore the substrate 68 is hardly flawed,
consequently the slip is hard to occur. In particular, when the
uppermost film 70 comprises SiO.sub.2 having lower hardness than
that of the substrate (Si) 68 during heat treatment, the SiO.sub.2
having the lower hardness is broken and thus the stress is released
during the heat treatment, therefore the substrate 68 having the
higher hardness is not flawed, and the slip does not occur. That
is, it is further preferable that the uppermost surface comprises a
material having hardness lower than that of other films and lower
than that of the substrate during heat treatment.
[0089] The uppermost SiO.sub.2 is preferably amorphous. The
substrate 68 and the supporting portion 58 are fused at the contact
point between them at high temperature, and when the contact point
between the substrate 68 and the supporting portion 58 is
crystalline at that time, since the crystalline portion does not
flow viscously, the stress due to the difference between
coefficients of thermal expansion can not be released, and finally
the slip occurs in either the substrate 68 or the supporting
portion 58. On the contrary, when the contact point between the
supporting portion 58 and the substrate 68 is amorphous, since the
amorphous portion flows viscously, even if the substrate 68 and the
supporting portion 58 are fused, the stress generated at the
contact point can be released, and the substrate 68 is not flawed,
and the occurrence of the slip can be prevented.
[0090] As shown in FIG. 10(d), it is better that the supporting
portion 58 is cut out with the periphery of the substrate-placing
face of the supporting portion 58 being left, and formed from the
cut-out portion 84 formed circularly at a center side and a
projection portion 86 formed annularly at the periphery, and the
first film 80 and the second film 82 are formed on the
substrate-placing face and the sides of the projection portion 86.
Accordingly, an area contacted with the substrate 68 can be
reduced.
[0091] While the second film 82 can be formed using the CVD and the
like similarly as the first film 80, it may be formed naturally
when the substrate 68 is treated as described later.
First Example
[0092] FIG. 11 shows a first example according to the invention. In
the substrate support 30 having the body portion comprising, for
example, silicon carbide as the above embodiment, the placing
portions 66 are formed protrusively from and parallel to the pole
64. Multiple poles, for example, three to four poles are provided
as the pole 64. A plate (base) 88 comprises a cylindrical
platelike-member made of, for example, silicon carbide (SiC), and a
bottom periphery of the plate 88 is supported by the placing
portion 66. The supporting portion 82 comprises a cylindrical
platelike member made of silicon (Si), and placed on a top of the
plate 88. The anti-adhesion layer 70 comprising, for example,
silicon carbide is formed on the top of the supporting portion 82.
The anti-adhesion layer 70 is preferably 0.1 .mu.m to 50 .mu.m
thick. The substrate 68 is supported by the supporting portion 82
via the anti-adhesion layer 70.
[0093] While thickness of the plate 88 and thickness of the
supporting portion 82 are preferably larger than the thickness of
the substrate 68 respectively, only the thickness of the supporting
portion 82 may be larger than the thickness of the substrate
68.
[0094] The plate 88 was 308 mm in diameter .PHI. and 3 mm in
thickness. The supporting portion 82 was 200 mm in diameter .PHI.
and 4 mm in thickness. The substrate 68 is a silicon wafer having a
diameter .PHI. of 300 mm and a thickness of 700 .mu.m. The
anti-adhesion layer 70 comprising silicon carbide was 0.1 .mu.m to
50 .mu.m thick. In heat treatment, the substrate 68 supported by
the substrate support 30 was loaded into a reactor held at a
temperature of 600.degree. C., and after loading the substrate, an
inside of the reactor was heated to 1200.degree. C. or 1350.degree.
C. as treatment temperature, and then nitrogen (N.sub.2) gas and
oxygen (O.sub.2) gas were introduced and the inside of the reactor
was maintained at the treatment temperature for a predetermined
time, and then the reactor temperature was cooled to 600.degree. C.
and the substrate 68 supported by the substrate support 30 was
unloaded. The heating or cooling was performed in multiple steps
such that the heating or cooling rate of the substrate 68 was
decreased with temperature increase. The reason why the heating or
cooling was performed in the multiple steps in this way (the reason
why the heating or cooling rate was decreased with temperature
increase) is because if temperature is suddenly changed at high
temperature, the temperature is not changed uniformly in a
substrate plane, causing the slip. The heat treatment time was
about 13 to 14 hours in total. As a result, the slip occurring in
the substrate 68 was not found in both cases of the treatment
temperature of 1200.degree. C. and 1350.degree. C.
Second Example
[0095] FIG. 12 shows a second example according to the invention.
In the substrate support 30 having the body portion comprising, for
example, the silicon carbide similarly as the above embodiment,
placing portions 66 are formed protrusively from and parallel to
the pole 64. The multiple poles, for example, three to four poles
are provided as the pole 64. The plate (base) 88 comprises the
cylindrical platelike-member made of, for example, silicon carbide
(SiC), and the bottom periphery of the plate 88 is supported by the
placing portion 66. The supporting portion 58 made of silicon (Si)
comprising the cylindrical platelike-member is placed on the plate
88. The anti-adhesion layer 70 comprising, for example, silicon
carbide is formed on a top of the supporting portion 58.
[0096] The silicon carbide plate 88 having a thickness of 2.5 mm to
3 mm and a diameter .PHI. of 308 mm was supported by the substrate
support 30 having the body portion made of silicon carbide, and the
silicon supporting-portion 58 having a thickness of 4 mm and a
diameter .PHI. of 200 mm, whose substrate-placing face is coated
with the silicon carbide film 70 as the anti-adhesion layer, was
placed thereon, and the substrate 68 that was a silicon wafer
having a thickness of 700 .mu.m and a diameter .PHI. of 300 mm was
placed thereon. In the heat treatment, as shown in FIG. 12, the
substrate 68 supported by the substrate support 30 was loaded into
the reactor held at a temperature of 600.degree. C., and after
loading the substrate, the inside of the reactor was heated to
1350.degree. C. while the treatment temperature at a heating rate
was stepwise changed, and then the nitrogen (N.sub.2) gas and the
oxygen (O.sub.2) gas were introduced and the inside of the reactor
was maintained at the treatment temperature for a predetermined
time, and then reactor temperature was cooled to 600.degree. C. at
a cooling rate which was stepwise changed and the substrate 68
supported by the substrate support 30 was unloaded. The heating or
cooling rate of the substrate 68 was decreased with temperature
increase. That is, the heating rate was set such that a heating
rate from 600.degree. C. to 1000.degree. C. was lower than a
heating rate from the room temperature to 600.degree. C., a heating
rate from 1000.degree. C. to 1200.degree. C. was lower than the
heating rate from 600.degree. C. to 1000.degree. C., and a heating
rate from 1200.degree. C. to 1350.degree. C. was lower than the
heating rate from 1000.degree. C. to 1200.degree. C. Conversely,
the cooling rate was set such that a cooling rate from 1350.degree.
C. to 1200.degree. C. was lower than a cooling rate from the
1200.degree. C. to 1000.degree. C., the cooling rate from
1200.degree. C. to 1000.degree. C. was lower than a cooling rate
from 1000.degree. C. to 600.degree. C., and the cooling rate from
1000.degree. C. to 600.degree. C. was lower than a cooling rate
from 600.degree. C. to the room temperature. The reason why the
heating or cooling was performed in the multiple steps in this way
(the reason why the heating or cooling rate was decreased with
temperature increase) is because if temperature is suddenly changed
at high temperature, the temperature is not changed uniformly in
the substrate plane, causing the slip. The heat treatment time was
about 13 to 14 hours in total. As a result, when the silicon
carbide film 70 was 0.1 .mu.m to 3 .mu.m thick, the slip did not
occur in the substrate 68. When the film 70 was 15 .mu.m or 50
.mu.m thick, the slip was hard to occur in the substrate 68.
[0097] The example was repeated, as a result it was found that the
slip was hard to occur in and after the second evaluation compared
with the first evaluation. It is considered that this is because an
amorphous SiO.sub.2 film is formed on a surface of the film 70 on
the supporting portion 58 in the heat treatment at a N.sub.2 or
O.sub.2 atmosphere in the first evaluation. The amorphous SiO.sub.2
film is formed on the uppermost surface of the supporting portion
58, thereby hardness of the contact portion between the supporting
portion 58 and the substrate 68 is lowered during heat treatment
compared with the film 70 made of SiC or the substrate 68 made of
Si, and even if stress is generated at the contact point between
the substrate 68 and the supporting portion 58 during the
high-temperature heat treatment, the stress can be released.
Moreover, since the SiO.sub.2 is amorphous, even if the substrate
68 and the supporting portion 58 are fused at the contact point
between them during the high-temperature heat treatment, the stress
generated at the contact point, which was fused due to viscous
flowing of an amorphous portion, can be released by viscous flowing
(viscous deformation) of the amorphous SiO.sub.2. As a result, it
is considered that the flaw produced in the substrate 68 during the
high-temperature heat treatment in and after the second evaluation
can be suppressed, and thus the slip occurring in the substrate 68
can be suppressed.
[0098] While a case that the amorphous SiO.sub.2 film was formed on
the surface of the film 70 made of SiC provided on the top of the
supporting portion 58 made of Si was described in the example, it
is appreciated that the amorphous SiO.sub.2 may be applied directly
on the surface of the supporting portion 58 made of Si.
[0099] While batch-type apparatus for heat-treating a plural number
of substrates was used as the thermal treatment apparatus in the
description of the embodiments and examples, the apparatus is not
limited to this, and may be sheet-type apparatus.
[0100] The thermal treatment apparatus of the invention can be
applied to a manufacturing process of the substrate.
[0101] An example that the thermal treatment apparatus of the
invention is applied to one step of a manufacturing process of a
SIMOX (Separation by Implanted Oxygen) wafer which is one of SOI
(Silicon On Insulator) wafers is described.
[0102] First, ion implantation of oxygen ions is performed into a
single-crystal silicon wafer using ion implantation apparatus and
the like. Then, the wafer into which the oxygen ions have been
implanted is annealed at a high temperature of 1300.degree. C. to
1400.degree. C., for example 1350.degree. C. or more, in an
atmosphere of, for example, Ar or O.sub.2 using the thermal
treatment apparatus in the above embodiments. A SIMOX wafer having
a SiO.sub.2 layer formed within the wafer (embedded SiO.sub.2
layer) is prepared by performing these treatments.
[0103] In addition to the SIMOX wafer, the thermal treatment
apparatus of the invention can be applied to one step of a
manufacturing process of a hydrogen annealing wafer. In this case,
the wafer is annealed at a high-temperature of 1200.degree. C. or
more in a hydrogen atmosphere using the thermal treatment apparatus
of the invention. Accordingly, crystal defects in a wafer surface
layer where IC (Integrated Circuit) is produced can be reduced, and
crystal integrity can be improved.
[0104] In addition to this, the thermal treatment apparatus of the
invention can be applied to one step of a manufacturing process of
an epitaxial wafer.
[0105] Even in a case that the high-temperature annealing is
performed as one step in the manufacturing processes of the
substrates as above, the slip occurring in the substrate can be
prevented by using the thermal treatment apparatus of the
invention.
[0106] In addition, the thermal treatment apparatus of the
invention can be applied to a manufacturing process of a
semiconductor device.
[0107] In particular, the apparatus is preferably applied to a
thermal treatment process performed at a relatively high
temperature, for example, a thermal oxidation process such as wet
oxidation, dry oxidation, hydrogen combustion oxidation (pyrogenic
oxidation), and HCl oxidation, or a thermal diffusion process for
diffusing an impurity (dopant) such as boron (B), phosphorous (P),
arsenal (As), and antimony (Sb) into a semiconductor thin film.
[0108] Even in a case that such a heat treatment process is
performed as one step in the manufacturing process of the
semiconductor device, occurrence of the slip can be prevented by
using the thermal treatment apparatus of the invention.
[0109] As above, the invention is characterized in the matters
described in claims, and the invention further includes the
following embodiments.
[0110] (1) The thermal treatment apparatus according to claim 1,
wherein thickness of the supporting portion is at least twice the
thickness of the substrate.
[0111] (2) The thermal treatment apparatus according to claim 1,
wherein the body portion has a placing portion for placing the
supporting portion, and thickness of the supporting portion is
larger than thickness of the placing portion.
[0112] (3) The thermal treatment apparatus according to claim 1,
wherein the supporting portion has a substrate-placing face, on
which the substrate is placed, and one or a plural number of
materials of silicon nitride (Si.sub.3N.sub.4), silicon carbide
(SiC), silicon oxide (SiO.sub.2), glassy carbon, and
microcrystalline diamond is/are coated on the substrate-placing
face.
[0113] (4) The thermal treatment apparatus according to claim 1,
wherein the supporting portion has the substrate-placing face, on
which the substrate is placed, and one or a plural number of
chip/chips comprising one or a plural number of materials of
silicon nitride (Si.sub.3N.sub.4), silicon carbide (SiC), silicon
oxide (SiO.sub.2), glassy carbon, and microcrystalline diamond
is/are provided on the substrate-placing face.
[0114] (5) The thermal treatment apparatus according to claim 1,
wherein the supporting portion has the substrate-placing face, on
which the substrate is placed, and a concave portion or a groove
concentric with the substrate is formed on the substrate-placing
face.
[0115] (6) The thermal treatment apparatus according to claim 1,
wherein the supporting portion has the substrate-placing face, on
which the substrate is placed, and the concave portion or the
groove concentric with the substrate is formed on periphery of the
substrate-placing face.
[0116] (7) The thermal treatment apparatus according to claim 1,
wherein the main body has the placing portion for placing the
supporting portion, and a fitting groove in which the supporting
portion is fitted is formed in the placing portion.
[0117] (8) The thermal treatment apparatus according to claim 1,
wherein the main body has the placing portion for placing the
supporting portion, and an opening or a groove is formed in the
placing portion, a convex portion which is fitted in the opening or
the groove is formed on the supporting portion, and the convex
portion on the supporting portion is fitted in the opening or the
groove.
[0118] (9) The thermal treatment apparatus according to claim 1,
wherein an area of the substrate-placing face of the supporting
portion is smaller than an area of a flat face of the
substrate.
[0119] (10) The thermal treatment apparatus according to claim 1,
wherein the supporting portion is cylindrical, and the diameter of
the supporting portion is smaller than the diameter of the
substrate.
[0120] (11) The thermal treatment apparatus according to claim 6,
wherein the thickness of the silicon carbide film is 0.0025% to
1.25% of the thickness of the supporting portion.
[0121] (12) The thermal treatment apparatus according to claim 6,
wherein the thickness of the silicon carbide film is 0.0025% to
0.38% of the thickness of the supporting portion.
[0122] (13) The thermal treatment apparatus according to claim 6,
wherein the thickness of the silicon carbide film is 0.0025% to
0.25% of the thickness of the supporting portion.
[0123] (14) The thermal treatment apparatus according to claim 6,
wherein a silicon oxide (SiO.sub.2) film is formed on an uppermost
face of the supporting portion.
[0124] (15) The thermal treatment apparatus according to claim 10,
wherein the plural number of films comprise two types of films, and
one of them is a silicon carbide (SiC) film, and an uppermost film
is a silicon oxide (SiO.sub.2) film.
[0125] (16) The thermal treatment apparatus according to claim 1,
wherein a composition of the body portion is silicon carbide
(SiC).
[0126] (17) The thermal treatment apparatus according to claim 1,
wherein the substrate support is configured such that a plural
number of substrates are supported approximately horizontally with
a gap in a plural number of stages.
[0127] (18) The thermal treatment apparatus according to claim 1,
wherein the heat treatment is performed at a temperature of
1000.degree. C. or more.
[0128] (19) The thermal treatment apparatus according to claim 1,
wherein the heat treatment is performed at a temperature of
1350.degree. C. or more.
[0129] (20) A method for treating a substrate, comprising a process
for carrying a substrate into a treatment room; a process for
supporting the substrate by a supporting portion formed from a
silicon platelike-member having a thickness larger than the
thickness of the substrate; a process for heat-treating the
substrate in the treatment room with the substrate being supported
by the supporting portion; and a process for carrying out the
substrate from the treatment room.
[0130] (21) A method for treating a substrate, comprising a process
for carrying a substrate into a treatment room; a process for
supporting the substrate by a silicon supporting-portion wherein a
substrate-placing face, on which the substrate is placed, is coated
with a film comprising one or a plural number of materials of
silicon carbide (SiC), silicon oxide (SiO.sub.2), glassy carbon,
and microcrystalline diamond; a process for heat-treating the
substrate in the treatment room with the substrate being supported
by the supporting portion; and a process for carrying out the
substrate from the treatment room.
[0131] (22) A method for manufacturing a substrate, comprising a
process for carrying a substrate into a treatment room; a process
for supporting the substrate by a silicon supporting-portion
wherein a plural number of different films are stacked on a
substrate-placing face, on which the substrate is placed, and the
hardness of an uppermost film is the lowest in the plural number of
films at heat treatment temperature, or the uppermost film is
amorphous; a process for heat-treating the substrate in the
treatment room with the substrate being supported by the supporting
portion; and a process for carrying out the substrate from the
treatment room.
[0132] (23) A method for manufacturing a semiconductor device,
comprising a process for carrying a substrate into a treatment
room; a process for supporting the substrate by a silicon
supporting-portion wherein a plural number of different films are
stacked on a substrate-placing face, on which the substrate is
placed, and the hardness of an uppermost film is the lowest in the
plural number of films at heat treatment temperature, or the
uppermost film is amorphous; a process for heat-treating the
substrate in the treatment room with the substrate being supported
by the supporting portion; and a process for carrying out the
substrate from the treatment room.
[0133] (24) A method for treating a substrate, comprising a process
for carrying a substrate into a treatment room; a process for
supporting the substrate by a silicon supporting-portion wherein a
plural number of different films are stacked on a substrate-placing
face, on which the substrate is placed, and the hardness of an
uppermost film is the lowest in the plural number of films at heat
treatment temperature, or the uppermost film is amorphous; a
process for heat-treating the substrate in the treatment room with
the substrate being supported by the supporting portion; and a
process for carrying out the substrate from the treatment room.
[0134] (25) A method for manufacturing a substrate, comprising a
process for carrying a substrate into a treatment room; a process
for supporting the substrate by a silicon supporting-portion
wherein a silicon carbide (SiC) film is formed on a
substrate-placing face, on which the substrate is placed, in
addition, a silicon oxide (SiO.sub.2) film is formed on an
uppermost face; a process for heat-treating the substrate in the
treatment room with the substrate being supported by the supporting
portion; and a process for carrying out the substrate from the
treatment room.
[0135] (26) A method for manufacturing a semiconductor device,
comprising a process for carrying a substrate into a treatment
room; a process for supporting the substrate by a silicon
supporting-portion wherein a silicon carbide (SiC) film is formed
on a substrate-placing face, on which the substrate is placed, in
addition, a silicon oxide (SiO.sub.2) film is formed on an
uppermost face; a process for heat-treating the substrate in the
treatment room with the substrate being supported by the supporting
portion; and a process for carrying out the substrate from the
treatment room.
[0136] (27) A method for treating a substrate, comprising a process
for carrying a substrate into a treatment room; a process for
supporting the substrate by a silicon supporting-portion wherein a
silicon carbide (SiC) film is formed on a substrate-placing face,
on which the substrate is placed, in addition, a silicon oxide
(SiO.sub.2) film is formed on an uppermost face; a process for
heat-treating the substrate in the treatment room with the
substrate being supported by the supporting portion; and a process
for carrying out the substrate from the treatment room.
[0137] (28) A method for manufacturing a substrate, comprising a
process for carrying a substrate into a treatment room; a process
for supporting the substrate by a silicon supporting-portion
wherein a coating film is formed on a substrate-placing face, on
which the substrate is placed, and the hardness of the coating film
is lower than the hardness of the substrate during heat treatment
at heat treatment temperature, or the coating film is amorphous; a
process for heat-treating the substrate in the treatment room with
the substrate being supported by the supporting portion; and a
process for carrying out the substrate from the treatment room.
[0138] (29) A method for manufacturing a semiconductor device,
comprising a process for carrying a substrate into a treatment
room; a process for supporting the substrate by a silicon
supporting-portion wherein a coating film is formed on a
substrate-placing face, on which the substrate is placed, and the
hardness of the coating film is lower than the hardness of the
substrate during heat treatment at heat treatment temperature, or
the coating film is amorphous; a process for heat-treating the
substrate in the treatment room with the substrate being supported
by the supporting portion; and a process for carrying out the
substrate from the treatment room.
[0139] (30) A method for treating a substrate, comprising a process
for carrying a substrate into a treatment room; a process for
supporting the substrate by a silicon supporting-portion wherein a
coating film is formed on a substrate-placing face, on which the
substrate is placed, and the hardness of the coating film is lower
than the hardness of the substrate during heat treatment at heat
treatment temperature, or the coating film is amorphous; a process
for heat-treating the substrate in the treatment room with the
substrate being supported by the supporting portion; and a process
for carrying out the substrate from the treatment room.
[0140] As described hereinbefore, according to the invention, since
the substrate is supported by the supporting portion formed from
the silicon platelike-member having a thickness larger than the
thickness of the substrate, the slip dislocation occurring in the
substrate can be prevented.
[0141] Moreover, according to the invention, since the silicon
supporting-portion is coated with the anti-adhesion layer such as
silicon carbide film, silicon nitride film, or silicon oxide film,
the slip occurring in the substrate can be prevented, and the
adhesion between the heat-treated substrate and the supporting
portion can be prevented. Moreover, the hardness of the film coated
on the substrate-placing face of the supporting portion is lower
than the hardness of the substrate during heat treatment in the
heat treatment, or the coated film is made amorphous, therefore the
slip occurring in the substrate can be further prevented. Moreover,
when a plural number of films are coated on the substrate-placing
face of the supporting portion, the hardness of the uppermost film
is the lowest during heat treatment, or the uppermost film is
amorphous, therefore, again in this case, the slip occurring in the
substrate can be further prevented.
INDUSTRIAL APPLICABILITY
[0142] The invention can be used for thermal treatment apparatus, a
method for manufacturing a semiconductor device, and a method for
manufacturing a substrate, wherein the occurrence of slip
dislocation in a substrate during heat treatment is reduced, and a
high-quality semiconductor device can be manufactured.
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