U.S. patent application number 12/251217 was filed with the patent office on 2009-02-05 for interconnect assemblies and methods.
This patent application is currently assigned to FORMFACTOR, INC.. Invention is credited to Benjamin N. Eldridge, Gaetan Mathieu.
Application Number | 20090035959 12/251217 |
Document ID | / |
Family ID | 39828249 |
Filed Date | 2009-02-05 |
United States Patent
Application |
20090035959 |
Kind Code |
A1 |
Eldridge; Benjamin N. ; et
al. |
February 5, 2009 |
INTERCONNECT ASSEMBLIES AND METHODS
Abstract
Interconnect assemblies having resilient contact elements and
methods for making these assemblies. In one aspect, the
interconnect assembly includes a substrate and a resilient
electrical contact element disposed on the substrate. A first
portion of the resilient contact structure is disposed on the
substrate and a second portion extends away from the substrate and
is capable of moving from a first position to a second position
under the application of a force. A stop structure is disposed on
the surface of the substrate and on a surface of the first portion
of the resilient contact structure. According to another aspect of
the present invention, a beam portion of the resilient contact
structure has a substantially triangular shape.
Inventors: |
Eldridge; Benjamin N.;
(Danville, CA) ; Mathieu; Gaetan; (Vareness,
CA) |
Correspondence
Address: |
N. KENNETH BURRASTON;KIRTON & MCCONKIE
P.O. BOX 45120
SALT LAKE CITY
UT
84145-0120
US
|
Assignee: |
FORMFACTOR, INC.
|
Family ID: |
39828249 |
Appl. No.: |
12/251217 |
Filed: |
October 14, 2008 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09364788 |
Jul 30, 1999 |
7435108 |
|
|
12251217 |
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Current U.S.
Class: |
439/66 |
Current CPC
Class: |
H01L 2224/1379 20130101;
H01L 24/13 20130101; H01L 24/03 20130101; H01L 2224/819 20130101;
H01L 2924/01013 20130101; H01L 24/16 20130101; H01L 2224/13026
20130101; H01L 2224/13164 20130101; H01L 24/72 20130101; H01L
2224/16057 20130101; H01L 2924/014 20130101; H01L 2224/1412
20130101; H01L 2224/05027 20130101; H01L 24/14 20130101; H01L
2224/02311 20130101; H01L 2224/10122 20130101; H01L 2224/13173
20130101; H01L 2924/01045 20130101; G01R 1/07342 20130101; H01L
2224/0401 20130101; H01L 2224/05563 20130101; H01L 2224/13023
20130101; H01L 2224/13012 20130101; H01L 2224/0239 20130101; H01L
2224/11452 20130101; H01L 2224/13173 20130101; H01L 2224/138
20130101; H01L 2924/01033 20130101; H01L 2924/01019 20130101; H01L
2924/14 20130101; H01L 2224/81007 20130101; H01L 2224/11462
20130101; H01L 2224/056 20130101; H01L 2224/11472 20130101; H01L
2224/131 20130101; H01L 2224/1413 20130101; H01L 2224/13082
20130101; H01L 2924/01027 20130101; H01L 2924/01005 20130101; H01R
13/03 20130101; H01L 24/11 20130101; H01L 2224/13012 20130101; H01L
2224/13016 20130101; H01L 2224/13155 20130101; H01L 2224/81801
20130101; H01L 2224/8185 20130101; H01L 2924/01006 20130101; H01L
2224/81191 20130101; H01L 24/02 20130101; H01L 2924/01029 20130101;
H01L 2924/01079 20130101; H01L 2224/0502 20130101; H01L 2224/05552
20130101; H01L 2224/13144 20130101; H01L 2224/0345 20130101; H01L
2924/01074 20130101; H01L 2224/0235 20130101; H01L 2224/0361
20130101; H01L 2224/13144 20130101; H01L 2924/00012 20130101; H01L
2924/00014 20130101; H01L 2924/01027 20130101; H01L 2924/00014
20130101; H01L 2224/02313 20130101; H01L 2224/03472 20130101; G01R
1/06727 20130101; H01L 2224/03912 20130101; H01L 24/05 20130101;
H01L 2224/05008 20130101; H01L 2224/13164 20130101; H01L 2224/1145
20130101; H01L 2224/11464 20130101; H01L 2224/13155 20130101; H01L
2224/02335 20130101 |
Class at
Publication: |
439/66 |
International
Class: |
H01R 12/00 20060101
H01R012/00 |
Claims
1. An interconnect assembly comprising: a substrate; a contact
element disposed on said substrate, a first portion of said contact
element adapted to be free-standing and further adapted to be
capable of moving from a first position to a second position when a
force is applied to said first portion of said contact element; and
a stop structure disposed on a second portion of said contact
element, said stop structure defining said second position.
2-42. (canceled)
Description
FIELD OF THE INVENTION
[0001] The present invention relates to interconnect assemblies and
methods for making and using interconnections and methods for
making these interconnect assemblies.
BACKGROUND OF THE INVENTION
[0002] There are numerous interconnect assemblies and methods for
making and using these assemblies in the prior art. Interconnect
assemblies for making electrical interconnections with
semiconductor integrated circuits must support the close spacing
between interconnect elements, sometimes referred to as the pitch
of the interconnect elements. Certain interconnect assemblies
perform their functions through testing and the useful life of the
integrated circuit. One type of interconnect assembly in the prior
art uses a resilient contact element, such as a spring, to form
either a temporary or a permanent connection to a contact pad on a
semiconductor integrated circuit. Examples of such resilient
contact elements are described in U.S. Pat. No. 5,476,211 and also
in co-pending, commonly-assigned, U.S. patent application entitled
"Lithographically Defined Microelectronic Contact Structures," Ser.
No. 09/032,473, filed Feb. 26, 1998, and also co-pending,
commonly-assigned, U.S. patent application entitled "Interconnect
Assemblies and Methods," Ser. No. 09/114,586, filed Jul. 13, 1998.
These interconnect assemblies use resilient contact elements which
can resiliently flex from a first position to a second position in
which the resilient contact element is applying a force against
another contact terminal. The force tends to assure a good
electrical contact, and thus the resilient contact element tends to
provide good electrical contact.
[0003] These resilient contact elements are typically elongate
metal structures which in one embodiment are formed according to a
process described in U.S. Pat. No. 5,476,211. In another
embodiment, they are formed lithographically (e.g. in the manner
described in the above-noted patent application entitled
"Lithographically Defined Microelectronic Contact Structures").
FIG. 1A illustrates an example of resilient contact elements which
are formed using a technique described in U.S. Pat. No. 5,476,211.
FIG. 1B shows an example of a resilient contact element which is
formed using lithographic techniques such as those described in the
above-noted U.S. patent application entitled "Lithographically
Defined Microelectronic Contact Structures." In general, resilient
contact elements are useful on any number of substrates such as
semiconductor integrated circuits, probe cards, interposers, and
other electrical assemblies. For example, the base of a resilient
contact element may be mounted to a contact terminal on an
integrated circuit or it may be mounted onto a contact terminal of
an interposer substrate or onto a probe card substrate or other
substrates having electrical contact terminals or pads. The free
end of each resilient contact element can be positioned against a
contact pad on another substrate to make an electrical contact
through a pressure connection when the one substrate having the
resilient contact element is pressed towards and against the other
substrate having a contact element which contacts the free end of
the resilient contact element.
[0004] It will be appreciated that in certain instances, it may be
desirable to secure the free end to the corresponding contact
element by an operation such as soldering. However, in many
instances, it is appropriate to allow the contact to be made by
pressure between the two substrates such that the contact end of
the resilient contact element remains free.
[0005] The resilient contact elements are useful for making
electrical contacts because their resilience maintains pressure for
good electrical contact and because they allow for tolerance in the
vertical or Z direction such that all contact elements will be able
to make a contact even if their heights vary slightly. However,
this pressure sometimes leads to the deformation or degradation of
resilient contact elements as they are compressed too much in the
vertical direction. One approach to prevent the deformation or
degradation of such resilient contact elements is to use a stop
structure on one or both of the two substrates. The stop structure
effectively defines the maximum deflection of the resilient contact
element such that each of the resilient contact elements is
prevented from overflexing (undue deflection) or being destroyed as
a result of the two substrates being pressed toward each other.
FIG. 1A shows an example of an integrated circuit having contact
pads 103 and having, for each of the contact pads, a resilient
contact element 110 mounted thereto. A plurality of stop structures
104 and 105 are disposed on the surface of the integrated circuit
102. These stop structures will prevent undue deflection and may
engage another substrate which is pressed towards the surface of
the semiconductor integrated circuit 102.
[0006] FIG. 1B shows an example of a lithographically defined
resilient contact element on a substrate, such as a semiconductor
integrated circuit 120. The integrated circuit includes on its
surface a stop structure 150.
[0007] The lithographically defined resilient contact structure of
FIG. 1B includes an intermediate layer 123 which makes an
electrical interconnection with the pad 122 through an opening in
the passivation layer 121 on the surface of the substrate of the
integrated circuit 120. A first metal layer 125 and a second metal
layer 126 are then formed to create a beam having a step 128 and a
beam portion 127. In this example, the beam portion is
substantially parallel to the surface of the substrate 120. A tip
structure including components 181, 182, 183, 184, and 185 is then
subsequently mounted to the end of the beam 127 to create a
resilient contact structure. Further details concerning methods for
creating and using such lithographically defined resilient contact
structures are described in the co-pending U.S. patent application
entitled "Lithographically Defined Microelectronic Contact
Structures" which is referred to above and which is hereby
incorporated herein by reference. While this lithographically
defined resilient contact element provides the advantage that it
can be formed lithographically using modern photolithographic
techniques which are prevalent in the semiconductor industry, there
are certain disadvantages with this type of resilient contact
element. For example, when a force F as shown in FIG. 1B is applied
downwardly against the tip 185, a torqueing action occurs at the
base of the resilient contact element. This torqueing action
results from the pressure contact which occurs when a contact
element on another substrate is pressed towards the tip 185. This
torque at the base tends to place stress at the base and along the
beam portion. If the beam portion 127 is a rectangular shape, this
results in the stress being localized at the portion of the beam
which is next to the base of the resilient contact element. While
the stop structure 150 provides some assurance that certain levels
of stress will not be exceeded, there are still certain
concentrated areas of stress, as a result of the rectangular shape,
which must be accounted for when designing a resilient contact
element. Typically, accounting for these concentrated areas of
stress requires increasing the use of the amount of materials at
certain points in the resilient contact element. This in turn may
limit the ability to design resilient contact elements to be
smaller. This is particularly undesirable as the sizes of
structures on semiconductor integrated circuits are being reduced
over time.
[0008] Thus, it is desirable to provide an improved resilient
contact element.
SUMMARY OF THE INVENTION
[0009] The present invention provides an interconnect assembly and
methods for making and using the assembly. In one example of the
present invention, an interconnect assembly includes a substrate
and a contact element disposed on the substrate. A first portion of
the contact element is adapted to be free-standing and is further
adapted to be capable of moving from a first position to a second
position when a force is applied to the first portion of the
contact element. The interconnect assembly further includes a stop
structure which is disposed on a second portion of the contact
element. The stop structure defines in part the second position of
the contact element. In one particular exemplary embodiment of the
present invention, the substrate comprises a semiconductor
integrated circuit. Force is applied when another contact element
is brought into mechanical and electrical contact with the contact
element. The stop structure defines the second position which
defines a maximum flexing of the contact element.
[0010] According to another example of the present invention, an
interconnect assembly is formed by a method of disposing a contact
element on a substrate, where a first portion of the contact
element is free-standing and is capable of moving from a first
position to a second position when a force is applied to the first
portion of the contact element. The method also includes disposing
a stop structure on a second portion of the contact element, where
the stop structure defines the second position.
[0011] It will be appreciated that a plurality of contact elements
of the invention may be used to create an interconnect
assembly.
[0012] An example of a method according to another aspect of the
present invention involves the formation of a freestanding elongate
resilient contact element using a mold. In this method, a mold is
depressed into a deformable material; the mold determines a shape
of at least a portion of the freestanding elongate resilient
contact element. This portion of the freestanding elongate
resilient contact element is then formed on the deformable
material.
[0013] Various other assemblies and methods are described below in
conjunction with the following figures.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] The present invention is illustrated by way of example and
not limitation in the figures of the accompanying drawings in which
like references indicate similar elements.
[0015] FIG. 1A shows an example of a plurality of resilient contact
elements disposed on a substrate with stop structures on that
substrate. FIG. 1A is a perspective view of the substrate 102 with
its resilient contact elements and stop structures.
[0016] FIG. 1B shows an example of a lithographically formed
resilient contact element formed on a substrate with a stop
structure. FIG. 1B is a cross-sectional view of the resilient
contact element and the stop structure.
[0017] FIG. 2A is a cross-sectional view of a resilient contact
element according to one embodiment of the present invention.
[0018] FIG. 2B is a cross-sectional view of another embodiment of a
resilient contact structure of the present invention with a stop
structure disposed over a base of the resilient contact
element.
[0019] FIG. 2C shows a cross-sectional view of another example of
an embodiment of a resilient contact element according to the
present invention in which a stop structure is disposed over a base
of the resilient contact element.
[0020] FIG. 2D shows a cross-sectional view of another example of a
resilient contact element of the present invention.
[0021] FIGS. 2E, 2F, 2G, and 2H show cross-sectional views which
compare the deflection of an initially straight resilient contact
element, shown in FIG. 2E, to the deflection of an initially curved
resilient contact element shown in FIG. 2G.
[0022] FIG. 3A is a top view of one example of a resilient contact
element according to the present invention.
[0023] FIG. 3B is a top view of another example of a resilient
contact element according to the present invention.
[0024] FIG. 3C is a top view of another example of a resilient
contact element according to the present invention.
[0025] FIG. 3D shows, in top view, an array of resilient contact
elements disposed on a substrate.
[0026] FIG. 4 shows, in cross-sectional view, an example of an
interconnect assembly of the present invention which includes a
resilient contact element having a stop structure disposed over the
base of the contact element and FIG. 4 also shows another substrate
being brought into contact with the substrate carrying the stop
structures and the resilient contact element.
[0027] FIG. 5 is a flowchart showing an example of a method for
forming a resilient contact element and a stop structure according
to one embodiment of the present invention.
[0028] FIG. 6A shows a cross-sectional view of the structure of an
interconnect assembly during the formation of a resilient contact
element according to one method of the present invention.
[0029] FIG. 6B shows another cross-sectional view at a later
processing stage in the fabrication process which produces a
resilient contact element according to one embodiment of the
present invention.
[0030] FIG. 6C shows a top view of a portion of the structure 608
shown in FIG. 6B.
[0031] FIG. 6D shows a cross-sectional view of the structure which
results after several processing steps shown in FIG. 5.
[0032] FIG. 6E shows a cross-sectional view of an alternative
substrate onto which a resilient contact element of the present
invention may be formed.
[0033] FIG. 6F shows a cross-sectional view after certain
processing steps in the method of FIG. 5.
[0034] FIG. 6G shows another cross-sectional view after further
processing steps of the method of FIG. 5.
[0035] FIG. 6H shows a top view of a portion of the structure shown
in FIG. 6G.
[0036] FIG. 6I shows another cross-sectional view of the structure
being formed according to the method shown in FIG. 5.
[0037] FIG. 6J shows another cross-sectional view of a resilient
contact element as it is being formed according to the method shown
in FIG. 5.
[0038] FIG. 6K shows a further cross-sectional view after further
processing steps according to the method of FIG. 5.
[0039] FIG. 6L shows a top view according to one embodiment of the
structure shown in FIG. 6K.
[0040] FIG. 7A shows in cross-sectional view an embodiment with
multiple resilient contact elements and their corresponding stop
structures.
[0041] FIG. 7B shows a perspective view of one resilient contact
element disposed within a well formed by the contact structure
according to one exemplary embodiment of the present invention.
[0042] FIG. 8A shows an alternative embodiment in cross-sectional
view of a resilient contact element according to the present
invention.
[0043] FIG. 8B shows in perspective view the resilient contact
element of FIG. 8A after the element has been assembled.
[0044] FIGS. 9A, 9B, 9C and 9D show cross-sectional views of a
substrate during another method, according to the invention, for
forming a resilient contact element.
DETAILED DESCRIPTION
[0045] The present invention relates to interconnection assemblies
and methods and particularly to interconnect assemblies and methods
for making mechanical and electrical connection to contact elements
on an integrated circuit. The following description and drawings
are illustrative of the invention and are not to be construed as
limiting the invention. Numerous specific details are described to
provide a thorough understanding of the present invention. However,
in other instances, well known or conventional details are not
described in order to not unnecessarily obscure the present
invention in detail.
[0046] FIG. 2A shows a cross-sectional view of a resilient contact
element which is one example of an embodiment of the present
invention. The resilient contact element 201 of FIG. 2A includes a
first metal layer 209 and a second metal layer 210 which have been
formed at an oblique angle relative to the surface of the substrate
202. The first metal layer 209 may be selected for its resiliency
properties in order to impart resiliency to the resilient contact
element and the second metal layer 210 may be selected for its
electrical conductivity properties in order to provide good
electrical conductivity for the resilient contact element. The
substrate 202 is typically a semiconductor substrate which includes
an integrated circuit which includes various terminals, one of
which is shown as the contact pad 207 in FIG. 2A. Representative
terminals carry input/output signals, power or ground. This contact
pad 207 is coupled through a wiring layer 206 to internal circuitry
within the integrated circuit. The wiring layer 206 is disposed
within an insulating layer 204, and layers 206 and/or 204 may be
covered by a passivating layer 205 on the top surface of the
substrate 202. The layer 203 may be an insulating layer or a
polysilicon layer or other layers which are known and used in
integrated circuits. The contact pad 207 is electrically and
mechanically coupled to a shorting layer 208 which is disposed
above the contact pad 207. The metal layers 209 and 210 are formed
above the shorting layer 208 with a base portion of each of the
metal layers 209 and 210 above and electrically connected to
contact pad 207. Electrical conductivity between the contact pad
207 occurs through the shorting layer 208 and the metal layer 209
and finally to the metal layer 210. It will be appreciated that the
resilient contact element 201 of FIG. 2A may also be used for other
types of interconnect assemblies such as probe card assemblies or
interposers or other connection systems where a resilient contact
element may provide electrical conductivity from a conductor in the
substrate 202 to the tip, which is free-standing, of the resilient
contact element 201. As can be seen from FIG. 2A, this resilient
contact element is both free-standing and elongate. Also, the
resilient contact element, in the embodiment shown in FIG. 2A, is
sloped relative to the surface of the substrate 202. In a preferred
embodiment, this slope typically forms an oblique angle relative to
the surface of the substrate 202.
[0047] In one particular embodiment of the present invention, the
resilient contact element 201 may be formed such that the beam
portion which extends from the base has a substantially triangular
shape. This is shown in the top view of the resilient contact
structure 301 shown in FIG. 3A. That is, the beam portion 215 of
the resilient contact element 201 may be formed in such a way as to
have a substantially triangular shape such as the beam portion 303
of the resilient contact element 301 shown in FIG. 3A. The
resilient contact element 301 includes a base 302 which is attached
to the beam portion and a tip 304 which makes electrical contact
with another interconnect terminal/pad. FIG. 3B shows, in a top
view, another example of a resilient contact element 301A which has
a beam portion 303A which has a substantially triangular shape. The
beam portion 303A is attached to the base 302A and includes a tip
304A.
[0048] FIG. 2B shows another embodiment of the present invention in
which a stop structure 211 is disposed on the top surface of the
substrate 202 and is also disposed on top of a portion of the base
214 of the resilient contact element 212. In this embodiment shown
in FIG. 2B, the substrate 202 includes the similar components 203,
204, 205, 206, 207, 208, 209 and 210 as in the case of the
interconnect assembly shown in FIG. 2A. A resilient contact element
212 includes two metal layers 209 and 210 which have been formed
such that a base portion 214 of both metal layers rests on the
upper surface of the shorting layer 208 while beam portion 215
extends from an end of the base portion 214 at an oblique angle
relative to the surface of the substrate 202. The beam portion of
the resilient contact element 212 may have a triangular shape or
other shapes such as rectangular shapes or other shapes which are
known to be used for resilient contact elements. In one embodiment,
however, it is preferred that the beam 215 have a triangular shape
such as the beam 303 of FIG. 3A or beam 303A of FIG. 3B. The stop
structure 211 is formed over the base portion 214 of the resilient
contact element 212. The stop structure 211 acts to prevent
overflexing (e.g. undue deflection) of the resilient contact
element by determining the maximum amount of deflection of the
resilient contact element 212 as it is pressed by a force F towards
the surface of the substrate 202. When another contact element,
such as a contact pad on another substrate, is pressed toward and
against the tip 216 of the resilient contact element 212, the upper
surface of the stop structure 211 will engage a corresponding
surface of the other substrate to prevent the substrate from being
pressed further towards the surface of the substrate 202. That is,
the travel between the two substrates is limited by the stop
structure 211 such that the stop structure 211 will define or
determine a minimum distance between the substrates and hence a
maximum flexing of the resilient contact element 212. Further
details in connection with advantages of and uses of stop
structures are described in co-pending U.S. patent application Ser.
No. 09/032,473, which was filed Jul. 13, 1998 and is entitled
"Interconnect Assemblies and Methods;" this co-pending patent
application entitled "Interconnect Assemblies and Methods" is
hereby incorporated herein by reference.
[0049] FIG. 2C shows a simplified example of a resilient contact
structure with a stop structure according to one exemplary
embodiment of the invention. The interconnect assembly 231 includes
a substrate 232 which has a wiring layer 237 embedded therein. The
wiring layer 237 is electrically coupled to a base portion 235 of a
resilient contact element 234. The base portion 235 is coupled to
the beam portion 236. Typically, as described below, the beam
portion 236 and the base portion 235 are formed integrally in one
operation. Both the base portion 235 and the beam portion 236 may
contain multiple conductive layers such as the layers 208, 209, and
210 as shown in FIGS. 2A and 2B. As in the case of the embodiments
shown in FIGS. 2A and 2B, the beam portion 236 of the resilient
contact element 234 extends from an end of the base portion 235 at
an oblique angle relative to the surface of the substrate 232. The
stop structure 233 is disposed above and adhered to the surface of
the substrate 232 and it is also disposed above and adhered to the
top surface of the base portion 235. As shown in FIG. 2C, an end of
the wiring layer 237 is mechanically adhered to and electrically
coupled to the base portion 235. Since the stop structure 233 is
mechanically adhered to the top surface of the substrate 232 and to
the top surface of the base portion 235, any torque created at the
base portion 235 (e.g. as a result of a force exerted against the
tip of the beam portion 236 when a contact pad, such as the contact
pad 411 shown in FIG. 4, is pressed towards the surface of the
substrate 232) will be balanced through various parts of the entire
structure, including the stop structure 233, rather than merely the
base portion 235 and the beam portion 236. It will be appreciated
that, in an alternative embodiment, a stop structure may be
disposed on only the base portion 235 and not the substrate 232 and
that this stop structure will tend to balance any torque created at
the base portion.
[0050] Several dimensions are labeled in FIG. 2C and also FIG. 3A
in order to provide examples of the present invention. It will be
appreciated that the following examples are merely illustrative of
the invention and are not intended to limit the invention and are
not intended to provide an exhaustive set of examples for possible
structures which are within the scope of the present invention. The
distance c represents in one example (e.g. see FIG. 4) the maximum
displacement or deflection of the resilient contact element. In one
example, this is approximately 75 microns (about 3 mils). This
distance c is normally less than the element's compliance which is
the total amount of deflection or flexing which is available before
"failure" of the resilient contact element. This distance in one
example (e.g. see FIG. 4) represents the travel of the tip from a
point where there is no force pressing against the tip to the point
where the tip has been pressed flush with the top surface of the
stop structure 233. Examples of these two states are shown in FIG.
2C where no force is being applied to the tip and FIG. 4 where a
force has been applied to the tip such that one substrate 410 has
its surface virtually in contact with the top surface of the stop
structures 406 and 407.
[0051] The thickness t represents the total thickness of the
resilient contact element in a perpendicular cross-section of the
resilient contact element as shown in FIG. 2C. Typically, this
thickness will be approximately the same throughout any particular
cross-section, although it will be appreciated that in alternative
embodiments, this thickness may be different at certain
cross-sections. It will also be appreciated that FIG. 2C represents
a simplified example of a resilient contact element 234 and that
the base and the beam portions may be fabricated from one or more
conductive layers. In a typical embodiment, the thickness is
approximately 25 microns, and the total height h of the resilient
contact element 234 is approximately 150 microns (about 6
mils).
[0052] For certain embodiments, the spring rate of the resilient
contact element may be approximately 1 to 2 grams per mil, where
the spring rate "k" represents the force of the spring divided by
the displacement of the spring (k=F/x). It will be appreciated that
once the geometry and the materials have been selected for a
particular resilient contact element, the thickness of the spring
generally determines the spring rate. Thickness is a major factor
in determining the stress at a maximum deflection, which is also
dependent upon the material in the resilient contact element. It
will be appreciated that certain design points or goals will be
established for a resilient contact element such that the maximum
possible stress for the resilient contact element is less than a
desired amount. The use of the stop structure 233 will tend to
control the maximum amount of stress and also tend to relieve the
stress at maximum deflection by counteracting the torque at the
base portion of the resilient contact element. This can be seen
from FIG. 4 which will be further described below.
[0053] The resilient contact element may have a curved shape which
provides certain advantages that are described here in conjunction
with FIGS. 2D, 2E, 2F, 2G and 2H. FIG. 2D shows a cross-sectional
view of a curved resilient contact element 234A which includes a
base portion 235A, a tip 239A and a curved beam portion 236A. The
base portion 235A is coupled electrically to the wiring layer 237.
The curvature of the beam portion may be used to compensate for
bending of the beam portion during deflection of the resilient
contact element. This compensation is shown in the comparison shown
by FIGS. 2E, 2F, 2G and 2H.
[0054] A stop structure 233 is disposed on the base portion 235A
and (optionally) on the substrate 232.
[0055] FIGS. 2E and 2F respectively show an initially straight
resilient contact element before and after deflection of the
resilient contact element. When a force F is applied to the tip of
the beam portion 236, the beam portion curves as shown in FIG. 2F,
and this causes the tip to be tilted away from the surface of the
contact point on the other substrate and causes a shallow angle
.theta..sub.1 to be formed between a line representing the surface
of the contact point and a line through the end of the beam
portion. These lines are shown in FIG. 2F along with the angle
.theta.. The shallowness of this angle tends to be undesirable for
making a good electrical connection.
[0056] FIGS. 2G and 2H respectively show an initially curved
resilient contact element before and after deflection of the
resilient contact element. When the force F is applied to the tip
of the beam portion 236A, this beam portion tends to be
straightened out as shown in FIG. 2H. As a result of this
straightening out, the angle .theta..sub.2 (the angle between the
line representing the surface of the contact point and a line
through the end of the beam portion) is not as shallow as angle
.theta..sub.1 and thus better electrical contact may be
accomplished using the curved resilient contact element.
[0057] FIG. 3A and FIG. 3B show another aspect of the present
invention in which the beam portion of the resilient contact
element has a substantially triangular shape. The resilient contact
element 301 includes a base 302 which corresponds to the base 235
in FIG. 2C. The beam portion 303 shown in the top view of FIG. 3A
corresponds to the beam portion 236 of FIG. 2C. The beam portion
303 includes a tip 304 which corresponds to the tip 239 of the
resilient contact element 234 of FIG. 2C. The triangular shape of
the beam portion 303 tends to more evenly distribute across (e.g.
tip to base) the entire beam the stress created when the tip 304 is
pressed towards the surface on which the base 302 is resting. This
allows the use of less material in the beam 303 while still
obtaining good performance for the resilient contact element, such
as the ability to withstand continued stress throughout the useful
life of the resilient contact element. FIG. 3B shows an alternative
triangular shaped resilient contact element.
[0058] FIG. 3C shows, in top view, another example of a resilient
contact element 310 which has a substantially triangular shape. In
this case, the triangle is modified at the electrical contact end
312 to include a portion of a rectangle. The beam portion of the
resilient contact element 310 is normally free-standing and capable
of deflections when depressed and includes a triangular part 314
and a rectangular part 312. The triangular part is attached to the
base portion 316. The beam portion may be attached to the base
portion 316 at an oblique angle and may be lithographically formed
together with the base portion 316. It can be seen that the
cross-sectional areas taken at different cross-sections 318 and 320
will be different, and this is also true of the contact elements
301 and 301A.
[0059] The geometry of the beam portions of these substantially
triangular shaped resilient contact elements provides improved
performance over a cantilever beam spring which has a substantially
constant cross-sectional area. Other shapes may also be selected to
provide improved performance relative to cantilever beam springs
which have substantially constant cross-sectional areas. The
substantially triangular shape gives better behavior of the spring
under stress and allows for tighter packing (small pitches) for the
springs. FIG. 3D shows an array of tightly packed (e.g. pitch of 10
microns) resilient contact elements 310A, 310B, 310C and 310D of
the type shown in FIG. 3C on a substrate 322 (which may be an
integrated circuit or an electrical connection substrate which may
be used to test or make permanent contact to an integrated
circuit). The geometry of the beam portion is selected to give
optimum stress behavior for a given size constraint (e.g. the size
as determined by the packing of the contact elements) and a given
spring rate and a given/desired amount of compliance for the
contact element. A smaller size, as determined by a size
constraint, for a given spring rate and given compliance tends to
place greater stress at certain points of a cantilever beam having
a constant cross-sectional area. A substantially triangular shaped
resilient contact element, on the other hand, allows for tighter
packing (see, e.g. FIG. 3D) and smaller sizes while, for the same
spring rate and given compliance, allowing better behavior under
stress.
[0060] In a typical embodiment, the dimensions l.sub.1 and l.sub.2
are about 9 mils while the dimension l.sub.3 is about 27 mils. An
array of these resilient contact elements may be formed on a
substrate, such as an integrated circuit or a contactor for making
contact to an integrated circuit, to create a densely packed array
of such resilient contact elements. FIG. 8B shows one example of a
layout of an array on a substrate 803. In one embodiment, these
resilient contact elements may be packed so densely that the
distance between corresponding points (e.g. bases) on adjacent
contact elements is less than 30 mils and even as small as 0.1 mils
(approximately 2.5 microns). FIG. 3D shows another example of an
array of densely packed (tight pitch) resilient contact
elements.
[0061] The actual use of an interconnect assembly according to one
embodiment of the present invention will now be described while
referring to FIG. 4. The substrate 402 includes a resilient contact
element 403 having a beam portion 405 and a base portion 404. In
this particular embodiment, the beam portion 405 may have a
triangular shape or may have another shape such as a rectangular
shape. Two stop structures 406 and 407 are adhered to the upper
surface of the substrate 402 and the stop structure 406 is also
adhered to the top portion of the base 404. The base 404 makes
mechanical and electrical contact with the wiring layer 415 in the
substrate 402. It will be appreciated that the substrate 402 may be
a semiconductor integrated circuit or may be a passive wiring layer
such as a probe card or interposer structure. Another
interconnection assembly 410 having a contact pad 411 is brought
into electrical and mechanical contact with the tip of the beam
portion 405 as shown in FIG. 4. The entire assembly 401, which
includes substrates 410 and 402, is pressed together to assure a
good pressure connection between the tip of the beam portion 405
and the surface of the contact pad 411. The contact pad 411 makes
electrical contact with other components through the wiring layer
412 of the substrate 410. As the substrate 410 is pressed towards
the substrate 402, the tip of the beam portion 405 makes a wiping
action which occurs laterally along the direction of the arrow 413
as shown in FIG. 4. This improves the electrical contact between
the beam portion 405 and the pad 411, thus improving the electrical
contact between the wiring layers 415 and 412. It will be
appreciated that FIG. 4 illustrates the circumstance where the
substrate 410 is pressed completely against the substrate 402 and
thus no further "travel" is possible (they cannot get closer). This
represents the maximum deflection of the resilient contact element
403. However, in use of the assembly 401, the two substrates may
not be abutting such that the resilient contact element 403 is
deflected less than the maximum deflection while still achieving
acceptable electrical conductivity between the beam 405 and the pad
411. The final assembly of substrates 402 and 410 may be held in
place by various techniques (with either maximum deflection of the
resilient contact elements or less than maximum deflection)
including by mechanical forces (e.g. F.sub.m shown in FIG. 4)
and/or by an adhesive applied between the surface of substrates 402
and 410 (not shown).
[0062] A method of fabricating an interconnect assembly will now be
described; this method represents one particular example of the
present invention and it will be appreciated that various other
methods may be employed using alternative techniques and
procedures. The method 500 shown in FIG. 5 begins with the
operation 502. This particular method assumes that a redistribution
layer will be applied in order to redistribute contact pads having
a certain arrangement and geometry to a set of another contact pads
having a different arrangement and/or geometry. It will be
appreciated that in other circumstances, a redistribution layer may
not be necessary, and the contact elements of the invention may
terminate directly on the wiring layers of the substrate without a
redistribution layer; see FIG. 6E. In operation 502, a passivation
layer, such as a polyimide layer, is applied to the upper surface
of the substrate having a contact pad disposed on the upper
surface. In one embodiment, a polyimide layer may be spun onto the
upper surface to uniformly cover the surface. Then the passivation
layer is patterned using conventional photolithography to create
openings in the passivation layer over the contact pads at the
surface of the substrate. These contact pads may be input/output
interconnections in a semiconductor integrated circuit or they may
be contact terminals on a passive or active board or substrate such
as a probe card or an interposer or other interconnect
assemblies.
[0063] FIG. 6A shows an example of an interconnect assembly 601
having a contact 604 at the upper surface of the substrate 602. A
wiring layer 603 is disposed in the substrate 602 in order to
provide electrical conductivity between the pad 604 and another
component, such as a circuit within the substrate 602 or a contact
terminal at another location on the substrate 602. It will be
appreciated that typically the wiring layer 603 is disposed within
an insulating layer in the substrate 602. It will also be
appreciated that the portion shown in FIG. 6A is the upper portion
of the substrate 602 and that other wiring layers and/or circuitry
is disposed below this portion shown in FIG. 6A. The passivation
layer applied in operation 402 is shown as passivation layer 605 in
FIG. 6A. This passivation layer has been patterned to create an
opening 606 over the contact pad 604.
[0064] In operation 504 of FIG. 5, a shorting layer is applied over
the surface of the passivating layer 605 and over the surface of
the contact pad 604. Then, a conventional photoresist is applied
over the entire surface of the shorting layer and this photoresist
is patterned using conventional photolithography to create an
opening over the shorting layer. The shorting layer may be formed
from copper, titanium, or titanium/tungsten or other appropriate
metallization and may be sputtered onto the surface of layer 605.
An example of a resulting interconnect assembly after operation 504
is shown in FIG. 6B. The interconnect assembly 608 of FIG. 6B
includes a shorting layer 609 which is disposed above the
passivation layer 605 and the contact pad 604. The contact pad and
the shorting layer 609 are in electrical conductivity. The
patterned photoresist layer 610 includes an opening 611 over a
portion of the shorting layer. This opening will be used to create
a redistribution layer wherein the layout of the contact pad 604
will be redistributed to another location. This may be done to
relax the interconnection pitch achieved at the end of the process
when the resilient contact elements have been formed on the
substrate 602. FIG. 6C shows a top view of the redistribution
wiring layer. In particular, FIG. 6C shows the pattern in the
photoresist layer 610 which has created a hole in the patterned
photoresist 610. This hole exposes a portion of the shorting layer
609 as shown in FIG. 6C.
[0065] In operation 506 of FIG. 5, a redistribution layer is
applied over the shorting layer. This redistribution layer may be
applied by electrolytically plating (or electroless plating) a
metal layer (e.g. copper or gold) onto the exposed portion of the
shorting layer, where the shorting layer is used as the cathode in
an electrolytic plating operation. It will be appreciated that on a
typical substrate there will be many such redistribution traces
created on the surface of the substrate in each of the patterned
openings in the patterned photoresist 610.
[0066] After the redistribution layer has been applied, the
patterned photoresist layer 610 is removed and the shorting layer
which is exposed after removing the patterned photoresist layer is
also removed. The redistribution layer may be used as a mask to
remove the shorting layer. Thus, in this case, typically one metal
(e.g. Ti/W) will be used to create a shorting layer and another
metal (e.g. Cu) will be used to create the redistribution layer
such that the redistribution layer will remain intact while the
shorting layer is etched away or removed under the action of a
solvent or etching agent which is resisted by the redistribution
layer metal. The result of operation 506 is shown in FIG. 6D. It
can be seen that the patterned photoresist layer 610 has been
removed and that the unprotected portion of the shorting layer 609
has also been removed, leaving the structure of the interconnect
assembly 614 shown in FIG. 6D. In an alternative embodiment in
which the shorting layer 609 is required for subsequent
electrolytic plating (e.g. because layer 642 has electrically
isolated regions due to openings in the layer), then the shorting
layer 609 is not removed in operation 506 but is removed in
operation 514.
[0067] It will be appreciated that operations 502, 504, and 506
have been used to create a plurality of redistribution traces, such
as a redistribution layer, on the surface of the substrate 602.
This may be required in certain cases where the contact pads were
designed to be connected to an interconnect mechanism other than a
resilient contact element or it may be desirable for other reasons.
It will also be appreciated that in certain instances, no such
redistribution layer is necessary and thus a resilient contact
element may be fabricated on a via or other contact element on the
surface of a substrate. An example of a via is shown in FIG. 6E in
which a post 623 of conductive material is exposed at the upper
surface 622 of the substrate 621. This conductive post 623 is
electrically coupled to the wiring layer 623 which is also in the
substrate 621. Typically, the material encasing the wiring layer
624 and the post 623 is an insulating layer. The substrate 621 will
typically be a part of a semiconductor integrated circuit although
other interconnect assemblies may also be used, such as printed
wiring substrates, interposers, etc. The processing from the
structure 620 shown in FIG. 6E is similar to the processing of the
structure 614 shown in FIG. 6D from steps 508 through 516 of FIG.
5. That is, while the structure 620 does not need to be processed
in operations 502, 504, and 506, it may be processed with
operations 508, 510, 512, 514, and 516 as will structure 614 shown
in FIG. 6D.
[0068] The next operation in the method 500 is operation 508 in
which a photoresist is applied and patterned to include an opening
which has a slope on the photoresist. The resulting structure of
the interconnect assembly is shown as structure 631 in FIG. 6F. The
photoresist 633 has been applied and patterned to create an opening
632 which has a slope 634 on a portion of the opening. The opening
is disposed at least partially over a portion of the conductive
layer 615. It will be appreciated that typically, the flat portion
of this opening will be utilized to construct a base for the
resilient contact element while the sloped portion 634 will be used
to construct the beam portion of the resilient contact element.
[0069] There are numerous techniques known in the art for creating
openings in photoresist which include a slope on the photoresist.
For example, a gray-scale mask having a relatively continuous
gradient of opacity from clear to black may be used to create a
slope on the photoresist. Other methods may be used to provide the
tapered side wall, which include: gently reflowing the masking
material to taper a side of the opening; controlling the light
exposure intensity or time to the masking material; during
exposure, varying the distance of the mask from the masking layer;
exposing the masking layer two or more times, one through the mask
having a small transparent area and separately with a mask having a
larger transparent area; or combinations of these methods. Methods
for forming an opening having a tapered side wall are further
described in co-pending U.S. patent application entitled
"Lithographically Defined Microelectronic Contact Structures" which
has been referred to above and which is hereby incorporated herein
by reference. Also described below is a method in which a mold is
used to stamp a slope in a deformable material which is then used
to form a resilient contact element.
[0070] After operation 508, the operation 510 involves applying a
seed layer and then applying and patterning a photoresist layer to
create a triangular opening (in one exemplary embodiment) for a
resilient contact element. The seed layer 642 shown in FIG. 6G may
be applied by conventionally sputtering an appropriate metallic
layer (e.g. Cu or Ti or Ti/W) onto the surface of the photoresist
633. If the shorting layer 609 was removed in operation 506, then
the seed layer 642 should provide a continuous conductive surface
except for the side wall 645, but if the shorting layer 609 was
retained in operation 506, then the seed layer 642 may be
electrically discontinuous over its entire surface.
[0071] In one preferred implementation, care is taken in the
sputtering operation to avoid or prevent the sputtered material
from remaining on the vertical side wall 645 so the opening in the
photoresist 633 does not receive a continuous layer of the seed
material. In another implementation, sputtering does cover some or
all of the vertical side wall 645. In this implementation, it is
generally preferable that the subsequent masking and patterning
step cover some or all of the sputtered side wall so as to minimize
or prevent subsequent deposition of additional conductive materials
on the vertical side wall.
[0072] After the seed layer 642 is applied, a photoresist layer is
applied over the surface of the seed layer 642 as shown in FIG. 6G.
This photoresist layer is then patterned to create an opening 643
in the patterned photoresist layer 646 as shown in FIG. 6G. This
opening will be used to deposit at least one conductive layer, such
as a metal layer, on the top of the exposed portion of the seed
layer 642. This will include the deposition of a beam portion of
the resilient element on the sloping portion 644 of the exposed
portion of the seed layer 642. It is generally desirable for the
subsequent plating or other deposition operation to fill the final
shape contours in a regular manner. In one preferred embodiment, a
seed layer is deposited so as to be primarily at the bottom of an
opening in photoresist, particularly where the photoresist is from
the masking and patterning phase of operation 510.
[0073] FIG. 6G shows an example of a structure 641 after completion
of the operation 510. FIG. 6H shows a top view of a portion of the
structure 641. In particular, the portion of the structure 641 over
the opening 643 is shown in the top view of FIG. 6H. It can be seen
that the patterned photoresist layer 646 exposes only a portion of
the seed layer 642. In the particular example shown in FIG. 6H, the
base portion of the resilient contact element will be formed in the
rectangular portion of the exposed seed layer 642 and the beam
portion of the resilient contact element will be formed in the
triangular portion of the exposed seed layer 642. This will result
in a resilient contact structure having a beam portion which is
substantially triangular in shape, such as the resilient contact
structure shown in FIG. 3A. It will be appreciated that in other
embodiments, other shapes, such as rectangular shapes, may be used
for the beam portion and thus top views of such structures would
look differently than FIG. 6H.
[0074] After structure 641 has been created by completing the
operation 510, operation 512 is performed on the structure 641 to
achieve the structure 651 shown in FIG. 6I. Operation 512 typically
involves in one exemplary embodiment the electrolytic plating of a
first metal layer and then a second metal layer into the triangular
opening. In alternative embodiments, the opening may be a different
shape (e.g. a rectangular shape to create a rectangular beam
portion) and alternative methods may be employed to deposit one or
more conductive layers into the opening. The seed layer 642 (or a
retained underlying shorting layer if the seed layer 642 is
electrically discontinuous over its surface) will be used as the
cathode in the electrolytic plating operation to plate the metal
layers 652 and 653 onto the exposed portion of the shorting layer
in the opening 643 as shown in FIG. 6I. In one embodiment, the
first metal layer 652 is selected to provide sufficient mechanical
resiliency so that the final resilient contact element has
sufficient resiliency for its intended operation. In one particular
embodiment, a nickel cobalt alloy may be used. This alloy may be
70% nickel and 30% cobalt. This alloy may be heat treated as
described in co-pending application Ser. No. 08/931,923 filed Sep.
17, 1997. The second metal layer 653 is typically selected to
provide good electrical conductivity; for example gold, or rhodium
or a palladium cobalt alloy may be used. The composition of the
various other layers and materials will be described further below.
It will also be appreciated that numerous other types of materials
may be selected for these metal layers, and these materials have
been described in U.S. Pat. No. 5,476,211.
[0075] After one or more conductive layers have been deposited into
the opening 643 and the structure 651 has been completed, then
operation 514 is performed to remove the photoresist layers and the
sputtered shorting layers to achieve the structure 661 shown in
FIG. 6J. Conventional solvents or dry etching methods for removing
or stripping the photoresist layers are utilized and solvents or
etchants which will selectively remove the sputtered seed layer,
such as seed layer 642, are used to remove the shorting layer.
Thus, the patterned photoresist layer 646 and the patterned
photoresist layer 636 is removed. Also, almost all of the seed
layer 642 is removed except for the portion of the layer under the
base of the resilient contact element 662 as shown in FIG. 6J. This
results in the structure shown in FIG. 6J which then may be used as
an interconnect assembly (without a travel stop structure) or may
be used with a travel stop structure after such structure has been
created in operation 516.
[0076] If it is desired to create a stop structure for the
interconnect assembly, then step 516 is performed on the structure
661. This operation involves the application of a photo-imageable
material (PIM), such as a negative photoresist such as SU8 which is
commercially available, over the entire surface of the structure
661. It is desirable that this PIM be applied uniformly to a
uniform thickness and relatively flat, preferably as flat as
possible. Thus it is preferred to spin the PIM, such as a
photoresist, onto the surface of the structure 661. Care should be
taken to apply enough photoresist material such that after it is
spun on, it covers the base of the resilient contact element 662.
That is, the height of the final structure created by this spun-on
photoresist should be more than the height h of the base of the
resilient contact element. Typically, the height of the final
structure should also be less than the height of the freestanding
contact point of the resilient contact element. Typically, the
difference between the height of the freestanding contact point and
the height of the final stop structure created by this photoresist
should be fabricated to be the maximum deflection amount c
described above.
[0077] After the proper amount of photoresist has been applied to
achieve the desired height of the photoresist relative to the
height h of the base of the resilient contact element (elements),
then the photoresist layer is exposed and developed. The
photoresist layer is exposed through a mask 690 such that an area
around and below the beam portion of the resilient contact element
remains unexposed while adjacent regions become exposed. Because
the PIM in one embodiment is a negative photoresist, this will mean
that the area which did not receive an exposure due to the mask 690
will be developed to remove the photoresist (and the exposed
portions of the photoresist will remain), creating the opening 674
as shown in FIG. 6K. In one embodiment, this mask 690 may be a
rectangular mask which provides sufficient clearance for the beam
portion to move up and down in the opening 674. In an alternative
embodiment, the mask 690 may be a triangular mask which is designed
to fit around the triangular shape of the beam portion of the
resilient contact element when the resilient contact element has a
triangular beam shape. Thus, the structure 671 shown in FIG. 6K
results from operation 516 and produces a stop structure 672 which
is adhered to the passivation layer 605 and to the conductive layer
615 and to the base portions 652A and 653A of the resilient contact
structure. Note that a portion 673 of the stop structure 672 is
adhered to and is over the base portions 653A and 652A.
[0078] FIG. 6L shows a top view of the structure shown in FIG. 6K.
FIG. 6L assumes that the mask 690 had a triangular shape rather
than a rectangular shape. Thus, the opening in the patterned
photoresist 672 which forms the stop structure is a triangular
opening which matches the shape of the triangular beam portion
while providing sufficient clearance for the beam portion to move
up and down within the opening 674. The base 653a is shown
underlying the travel stop structure 672 in FIG. 6L. In an
alternative embodiment, a rectangular mask 690a may be used over
the beam portion in the exposure operation 516 to create a
rectangular opening 674a shown in FIG. 7B. This rectangular opening
in the stop structure 672 may be used either for a triangular beam
portion as shown in FIG. 7B or may be used for a beam portion which
is rectangular. It will be appreciated that whichever mask geometry
is selected, it should provide sufficient clearance for the beam
portion to move up and down within the opening in the stop
structure 672.
[0079] FIG. 7A shows a cross-sectional view of a plurality of
resilient contact elements which include stop structures
surrounding and disposed on the bases of the resilient contact
elements.
[0080] FIG. 8A shows an alternative embodiment for creating a
resilient contact element which includes three portions, a base
portion, a beam portion, and a contact portion. The contact portion
is useful for contacting a second electronic component as described
above in detail. In addition, the contact portion may be used to
attach a tip structure onto the end of the beam. Examples of
various tip structures and methods for mounting tip structures are
described in the co-pending U.S. patent application entitled
"Lithographically Defined Microelectronic Contact Structures" and
also in co-pending U.S. patent application Ser. No. 08/819,464,
which was filed Mar. 17, 1997. In particular, FIG. 8A shows the
structure after a stage in the fabrication process of an
interconnection assembly after operation 512 (without operations
502, 504, and 506 because this assembly does not utilize a
redistribution layer). The structure of FIG. 8A includes a
conductive post 604a disposed in an insulating layer of the
substrate 602a. The conductive post is electrically coupled to a
seed layer 642a which corresponds to the seed layer 642 of FIG. 6I.
The seed layer 642a has been sputtered over a patterned photoresist
layer 633a which includes an opening having a sloped side wall. The
sputtered seed layer 642a is used to electrolytically plate two
metal layers to create the structure shown in FIG. 8A. The
electroplating operation occurs through the patterned photoresist
mask 646a which corresponds to the patterned mask 646 of FIG. 6I.
After the plating operation has occurred, each metal layer includes
a base portion, such as the base portion 653a, a beam portion, such
as the beam portion 653b, and a contact portion, such as the
contact portion 653c. After the electroplating operation is
completed, operation 514 may be performed to remove the photoresist
layers 646a and 633a and then the sputtered seed layer 642a may be
removed except for the portion under the base 653a. The resulting
structure may be used as a resilient contact element in an
interconnect assembly without a stop structure or the stop
structure may be formed by performing operation 516 as described
above.
[0081] FIG. 8B illustrates an array 800 of two resilient contact
elements 801 and 802 on the surface of the substrate 803. FIG. 8B
is a perspective view and it will be appreciated that typically a
large number of resilient contact elements may be disposed on the
surface of the substrate, such as a semiconductor integrated
circuit or other interconnect assemblies. The resilient contact
elements shown in FIG. 8B are similar to the type shown in FIG. 8A
in that they include a contact portion at the end of the beam
structure. The beam structure, such as beam portion 653B, may be a
substantially triangular shape which is attached to the base
portion 653A. The contact portion 653C may serve itself as the
contact tip for making contact to another contact terminal (e.g.
contact terminal 411 as shown in FIG. 4) or a tip structure as
described above may be mounted onto the foot portion 653C to
provide a tip structure. This structure may also be adapted for
permanent connection to the contact pad (e.g. by use of solder or
conductive epoxy).
[0082] FIGS. 9A, 9B, 9C and 9D illustrate another method for
forming a resilient contact element according to the present
invention. A mold 901, which may be photolithographically formed,
includes a "negative" image of at least a portion of a resilient
contact element. The mold 901 is shown in FIG. 9A prior to being
used on the deformable material 903 and is positioned above the
deformable material 903, which is disposed on a substrate 905 which
includes wiring layer 906. The substrate 905 and wiring layer 906
is similar to the structure shown in FIG. 6E. The deformable
material 903 may be any number of materials, such as PMMA (poly
methyl methacrylate), which are deformable when pressed with a mold
or stamp and which can be used to receive the deposition of spring
metals to form a resilient contact element and can be subsequently
removed. The mold 901 includes, in the embodiment shown in FIG. 9A,
a base portion 901B and a sloped portion 901A. It will be
appreciated that other geometries may be used, including a rotated
"L" shape (e.g. ) or a shape that will generate the curved beam
portion of FIG. 2D.
[0083] The mold 901 is pressed into the deformable material as
shown in FIG. 9B. Several pounds of pressure may be necessary
(depending on the type of deformable material) in order to deform
the deformable material to achieve the desired shape. This in one
exemplary embodiment causes the base portion 901B to be nearly
touching the surface of substrate 905, leaving a thin region of the
deformable material separating this surface from the base portion
901B. The mold 901 forces the deformable material to take the
positive of its negative shape as shown in FIG. 9B. The mold 901 is
then separated from the substrate 905 and deformable material 903,
leaving the structure shown in FIG. 9C. This structure is then
"cleaned" to remove the thin region 903A of the deformable material
which was under the base portion 901B. The structure may be cleaned
with an isotopic etch which removes all exposed deformable material
but does not effect the substrate 905. This etch is performed for a
sufficient duration to remove all of the thin region 903A while
leaving most of the remainder of the deformable material 903,
including the sloped portion 903B. The structure may be cleaned to
remove the thin region 903A with a plasma etch or a reactive ion
etch or with a laser ablation etch. After removal of the thin
region 903A, the structure is shown in FIG. 9D, and it is ready for
further processing (e.g. operations 510, 512, 514, and 516 of FIG.
5) to create a resilient contact element using the molded
deformable material.
[0084] There are numerous ways to create the mold. The mold may be
formed from a silicon wafer by laser etching the surface of the
wafer. A glass backing substrate with a photo-imageable material
(which can be hardened) may be used with a mask to
photolithographically define the mold. A silicon carbide wafer may
be machined to define the mold by using electro-discharge machining
techniques on the silicon carbide wafer. A negative of the mold may
be formed in wax (e.g. paraffin), then sputtering a shorting layer
on the surface of the negative, after which the mold is formed by
electrolytically plating a metal onto the shorting layer on the
wax.
[0085] The foregoing discussion has provided certain details with
respect to materials and process steps. It will be appreciated that
the present invention may be practiced with other types of
materials and process variations. For example, in just some of many
preferred implementations, the sputtered shorting layers may use
copper, gold, aluminum, titanium, titanium/tungsten or other
appropriate metallization. Further, the redistribution trace 615
may use copper or gold material in creating the trace. Other
materials may be employed to achieve similar results as will be
appreciated by those skilled in the art. As another alternative
embodiment, it will be appreciated that other methods for forming
various layers may be employed. For example, processes based on
electroless plating, chemical vapor deposition (CVD), or phase
vapor deposition (PVD) may be utilized rather than electrolytic
plating.
[0086] In the foregoing specification, the present invention has
been described with reference to specific exemplary embodiments
thereof. It will, however, be evident that various modifications
and changes may be made thereto without departing from the broader
scope and spirit of the invention as set forth in the appended
claims.
* * * * *