U.S. patent application number 12/136316 was filed with the patent office on 2009-01-15 for heat-conductive package structure.
This patent application is currently assigned to PHOENIX PRECISION TECHNOLOGY CORPORATION. Invention is credited to Pao-Hung Chou, Chi-Liang Chu, Wei-Chun Wang.
Application Number | 20090014865 12/136316 |
Document ID | / |
Family ID | 40252397 |
Filed Date | 2009-01-15 |
United States Patent
Application |
20090014865 |
Kind Code |
A1 |
Chou; Pao-Hung ; et
al. |
January 15, 2009 |
HEAT-CONDUCTIVE PACKAGE STRUCTURE
Abstract
A heat-conductive package structure includes a carrier board
having a first surface and an opposing second surface and formed
with a through opening passing the carrier board; a first
heat-conductive structure including a heat-conductive hole in the
through opening, a first heat-conductive sheet on the carrier
board, and a second heat-conductive sheet on the carrier board,
wherein the first and second heat-conductive sheets are
conductively connected by the heat-conductive hole; a first
dielectric layer formed on the first surface of the carrier board
and formed with a first opening for exposing the first
heat-conductive sheet; a second dielectric layer formed on the
second surface of the carrier board and formed with at least a
second opening for exposing a portion of the second heat-conductive
sheet; and a second heat-conductive structure formed in the second
opening and mounted on the second heat-conductive sheet.
Inventors: |
Chou; Pao-Hung; (Hsin-Chu,
TW) ; Chu; Chi-Liang; (Hsin-Chu, TW) ; Wang;
Wei-Chun; (Hsinchu, TW) |
Correspondence
Address: |
SCHMEISER OLSEN & WATTS
18 E UNIVERSITY DRIVE, SUITE # 101
MESA
AZ
85201
US
|
Assignee: |
PHOENIX PRECISION TECHNOLOGY
CORPORATION
Hsin-Chu
TW
|
Family ID: |
40252397 |
Appl. No.: |
12/136316 |
Filed: |
June 10, 2008 |
Current U.S.
Class: |
257/712 ;
257/E23.11 |
Current CPC
Class: |
H01L 23/49822 20130101;
H05K 1/183 20130101; H01L 24/45 20130101; H01L 2224/451 20130101;
H01L 2924/181 20130101; H01L 2924/01079 20130101; H01L 2924/00014
20130101; H01L 2924/00014 20130101; H01L 2924/00015 20130101; H01L
2924/00012 20130101; H01L 2224/05599 20130101; H01L 2924/15331
20130101; H05K 3/4602 20130101; H01L 2924/00014 20130101; H01L
2224/451 20130101; H05K 1/0206 20130101; H01L 2924/1517 20130101;
H01L 2224/48091 20130101; H01L 2924/181 20130101; H01L 23/3128
20130101; H01L 2224/451 20130101; H01L 2924/15153 20130101; H01L
23/49816 20130101; H01L 2924/15311 20130101; H01L 2225/0651
20130101; H05K 2201/09627 20130101; H01L 2224/48091 20130101; H01L
2924/00014 20130101; H01L 24/48 20130101; H01L 2224/48227 20130101;
H01L 2924/01078 20130101; H05K 2201/09536 20130101; H01L 25/0657
20130101; H01L 23/3677 20130101 |
Class at
Publication: |
257/712 ;
257/E23.11 |
International
Class: |
H01L 23/34 20060101
H01L023/34 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 10, 2007 |
TW |
096124995 |
Claims
1. A heat-conductive package structure, comprising: a carrier board
with a first surface, a second surface opposing the first surface,
and at least a through opening passing the first and second
surfaces; a first heat-conductive structure comprising a
heat-conductive hole in the through opening, a first
heat-conductive sheet on the first surface of the carrier board,
and a second heat-conductive sheet on the second surface of the
carrier board, wherein the first and second heat-conductive sheets
are conductively connected by the heat-conductive hole; a first
dielectric layer disposed on the first surface of the carrier board
and formed with a first opening for exposing the first
heat-conductive sheet; a semiconductor component having an active
surface and an inactive surface opposing to the active surface,
wherein the semiconductor component is mounted on the first
heat-conductive sheet via the inactive surface; a second dielectric
layer disposed on the second surface of the carrier board and
formed with at least a second opening for exposing a portion of the
second heat-conductive sheet; and a second heat-conductive
structure disposed in the second opening and mounted on the second
heat-conductive sheet.
2. The heat-conductive package structure of claim 1, wherein the
carrier board is one of an insulated board and a circuit board with
a circuit.
3. The heat-conductive package structure of claim 1, wherein the
first and second heat-conductive sheets further comprise a metal
layer.
4. The heat-conductive package structure of claim 1, wherein the
heat-conductive hole is one selected from the group consisting of
non-fully plated metal through hole, fully plated metal through
hole, solid metal heat-conductive via, and hollow heat-conductive
via.
5. The heat-conductive package structure of claim 1, wherein the
second heat-conductive structure is one of hollow heat-conductive
via and solid heat-conductive via.
6. The heat-conductive package structure of claim 1, further
comprising first and second circuit layers disposed on the first
and second dielectric layers respectively, wherein the first
circuit layer is formed with a plurality of first and second
electrically connecting pads, and the second circuit layer is
formed with a plurality of third electrically connecting pads.
7. The heat-conductive package structure of claim 6, further
comprising an insulating protective layer disposed on the first and
second dielectric layers, wherein an insulating protective layer
opening is formed in the insulating protective layer to expose the
first heat-conductive structure in the first opening of the first
dielectric layer and expose the first, second and third
electrically connecting pads.
8. The heat-conductive package structure of claim 7, wherein a
first conductive element is disposed on the first and third
electrically connecting pads in the insulating protective layer
opening.
9. The heat-conductive package structure of claim 8, wherein the
first conductive element is one of a solder ball and a metal
pin.
10. The heat-conductive package structure of claim 7, further
comprising a heat-dissipating element formed on an exposed surface
of the second heat-conductive structure.
11. The heat-conductive package structure of claim 10, wherein the
heat-dissipating element is one of a solder ball and a metal
pin.
12. The heat-conductive package structure of claim 1, wherein the
semiconductor component is one of an active chip and a passive
chip.
13. The heat-conductive package structure of claim 12, wherein a
plurality of electrode pads are formed on the active surface of the
semiconductor component.
14. The heat-conductive package structure of claim 13, further
comprising a second conductive element for electrically connecting
the electrode pads on the semiconductor component and the second
electrically connecting pads on the first circuit layer.
15. The heat-conductive package structure of claim 14, wherein the
second conductive element is a metal wire.
16. The heat-conductive package structure of claim 1, wherein the
semiconductor component is a chipset comprising a first
semiconductor chip and a second semiconductor chip.
17. The heat-conductive package structure of claim 16, wherein the
first semiconductor chip and the second semiconductor chip are one
of active chips and passive chips.
18. The heat-conductive package structure of claim 17, wherein a
plurality of electrode pads are formed on the active surfaces of
the first semiconductor chip and the second semiconductor chip.
19. The heat-conductive package structure of claim 18, further
comprising a second conductive element for electrically connecting
the electrode pads on the first and second semiconductor chips and
the second electrically connecting pads on the first circuit
layer.
20. The heat-conductive package structure of claim 19, wherein the
second conductive element is a metal wire.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to package structures, and
more particularly, to a heat-conductive package structure.
[0003] 2. Description of Related Art
[0004] Owing to advances in semiconductor package technology, there
are various packages for semiconductor devices nowadays. Ball Grid
Array (BGA) is an advanced semiconductor package technique,
characterized by mounting a semiconductor chip on a package
substrate, and having a plurality of solder balls arranged in a
grid array and formed on the back of the package substrate, thereby
increasing the number of I/O connections in unit area. Ball Grid
Array not only meets the high integration requirements for a
semiconductor chip but also enables the semiconductor chip to be
electrically connected to an external device via solder balls.
[0005] With the electronic industry booming, electronic products
are becoming more multi-function and high-performance. To meet the
packaging requirements for high integration and miniaturization of
semiconductor packages, semiconductor chips nowadays generate an
increasingly great amount of heat during operation. Failure to
timely dissipate the heat generated by semiconductor chips can
deteriorate the performance of the semiconductor chips and shorten
the life of the semiconductor chips.
[0006] FIG. 1 is a cross-sectional view showing a semiconductor
component mounted on a conventional circuit board. The carrier
board 100 has a first surface 100a and a second surface 100b. The
carrier board 100 is a circuit board with a circuit. The first
surface 100a and the second surface 100b are formed with a first
dielectric layer 11a and a second dielectric layer 11b thereon
respectively. The first and second dielectric layers 11a, 11b are
formed with first and second circuit layers 12a, 12b thereon
respectively. The first circuit layer 12a has first electrically
connecting pads 121a and second electrically connecting pads 122a
thereon. The second circuit layer 12b has third electrically
connecting pads 121b thereon. At least a plated through hole (PTH)
13 is formed in the carrier board 100 and the first and second
dielectric layers 11a, 11b to electrically connect the first and
second circuit layers 12a, 12b. An insulating protective layer 14
is formed on the first and second dielectric layers 11a, 11b and
first and second circuit layers 12a, 12b. Insulating protective
layer openings 140, 141 are formed in the insulating protective
layer 14 to expose the first and second electrically connecting
pads 121a, 122a and third electrically connecting pads 121b. A
metal protective layer 16 made of nickel/gold (by nickel-plating
and then gold-plating) is formed on the surfaces of the first,
second and third electrically connecting pads 121a, 122a and 121b.
A conductive element 15, such as a solder ball, is formed on the
metal protective layer 16 on the first and third electrically
connecting pads 121a, 121b for electrical connection with another
electronic device. A semiconductor component 17 is mounted on the
insulating protective layer 14 on the first surface 100a of the
carrier board 100. The semiconductor component 17 has an active
surface 17a and an inactive surface 17b opposing to the active
surface 17a. A plurality of electrode pads 171 are formed on the
active surface 17a of the semiconductor component 17. The
semiconductor component 17 is mounted on the first surface 100a of
the carrier board 100 via the inactive surface 17b. The second
electrically connecting pads 122a covered with the metal protective
layer 16 are exposed from the insulating protective layer opening
141 of the insulating protective layer 14. A second conductive
element 18, such as a metal wire, is formed on the metal protective
layer 16 to electrically connect the electrode pads 171 on the
semiconductor component 17 and the second electrically connecting
pads 122a. Afterward, an encapsulant 19 encapsulates and thereby
protects the wire-bonded second conductive element 18 and
semiconductor component 17.
[0007] Nevertheless, heat generated by the packaged semiconductor
component 17 on the first dielectric layer 11a is unlikely to be
dissipated efficiently. Also, the inactive surface 17b of the
semiconductor component 17 is in contact with the insulating
protective layer 14, but the insulating protective layer 14 is
almost incapable of heat dissipation. As a result, the
semiconductor component 17 is likely to be overheated and
damaged.
[0008] FIG. 2A is a cross-sectional view showing a semiconductor
component mounted on another conventional circuit board, in which a
carrier board 100 (like the one shown in FIG. 1) with a first
surface 100a is provided. An opening 110a is formed in a first
dielectric layer 11a disposed on the first surface 100a to expose
the carrier board 100. An insulating protective layer opening 142
is formed in the insulating protective layer 14 disposed on the
first dielectric layer 11a to expose the second electrically
connecting pads 122a on the first circuit layer 12a formed on the
first dielectric layer 11a and the opening 110a of the first
dielectric layer 11a. The metal protective layer 16 is formed on
the second electrically connecting pads 122a. The inactive surface
17b of the semiconductor component 17 is in contact with a portion
of the carrier board 100 exposed from the opening 110a. The second
conductive element 18 electrically connects the electrode pads 171
on the active surface 17a of the semiconductor component 17 and the
metal protective layer 16 on the second electrically connecting
pads 122a. The encapsulant 19 encapsulates and thereby protects the
wire-bonded second conductive element 18 and semiconductor
component 17. The semiconductor component 17 is received in the
opening 110a, so as to reduce the total thickness of the
semiconductor package.
[0009] The semiconductor component 17 is embedded in the opening
110a of the first dielectric layer 11a to shorten an electrical
conduction path, lessen signal loss and distortion, enhance
high-speed performance, and downsize a wire-bonded and encapsulated
semiconductor package. But little heat conduction or heat
dissipation takes place through the contact between the carrier
board 100 and the inactive surface 17b of the semiconductor
component 17. As a result, heat generated by the semiconductor
component 17 in operation cannot be efficiently dissipated.
[0010] FIG. 2B is a cross-sectional view showing semiconductor
components stacked up and mounted on another conventional circuit
board. The semiconductor component 17 includes a first
semiconductor chip 17' and a second semiconductor chip 17'' stacked
on the first semiconductor chip 17'. The first semiconductor chip
17' is mounted on a portion of the carrier board 100 exposed from
the opening 110a, via the inactive surface 17b of the first
semiconductor chip 17'. The electrode pads 171', 171'' on the first
semiconductor chip 17' and the second semiconductor chip 17'' are
electrically connected to the metal protective layer 16 on the
second electrically connecting pads 122a, via the second conductive
element 18.
[0011] The second semiconductor chip 17'' is stacked on the first
semiconductor chip 17', wherein the inactive surface 17b'' of the
second semiconductor chip 17'' in connected to the active surface
17a' of the first semiconductor chip 17'. The first semiconductor
chip 17' is mounted on the carrier board 100 via the inactive
surface 17b', but the carrier board 100 is unfit for heat
conductive and heat dissipation. Hence, heat generated by the
semiconductor component in operation cannot be efficiently
dissipated.
[0012] It is an urgent issue to develop a heat-conductive package
structure in order to enhance heat dissipation of a semiconductor
component in operation, downsize a semiconductor package, and
overcome the drawbacks of the prior art.
SUMMARY OF THE INVENTION
[0013] In the light of foregoing drawbacks of the prior art, a
primary objective of the present invention is to provide a
heat-conductive package structure, to enable a semiconductor
component to dissipate heat via a heat-conductive structure.
[0014] Another objective of the present invention is to provide a
heat-conductive package structure, to downsize a semiconductor
package and thereby achieve miniaturization of the semiconductor
package.
[0015] A further objective of the present invention is to provide a
heat-conductive package structure, to enhance heat dissipation of
the semiconductor component, prevent the semiconductor component
and the circuit board from damage, enhance electrical performance
of the semiconductor component and the circuit board, and prolong
the life of the semiconductor component.
[0016] To attain the above and other objectives, the present
invention provides a heat-conductive package structure, including:
a carrier board with a first surface, a second surface opposing to
the first surface, and at least a through opening passing the first
and second surfaces; a first heat-conductive structure having a
heat-conductive hole in the through opening, a first
heat-conductive sheet on the first surface of the carrier board,
and a second heat-conductive sheet on the second surface of the
carrier board, wherein the first and second heat-conductive sheets
are conductively connected by the heat-conductive hole; a first
dielectric layer disposed on the first surface of the carrier board
and formed with a first opening for exposing the first
heat-conductive sheet; a semiconductor component having an active
surface and an inactive surface opposing to the active surface,
wherein the semiconductor component is mounted on the first
heat-conductive sheet via the inactive surface; a second dielectric
layer disposed on the second surface of the carrier board and
formed with at least a second opening for exposing a portion of the
second heat-conductive sheet; and a second heat-conductive
structure disposed in the second opening and mounted on the second
heat-conductive sheet.
[0017] The carrier board is a circuit board with a circuit or an
insulated board. The first and second heat-conductive sheets
respectively have a metal layer thereon. The heat-conductive hole
is one selected from the group consisting of a non-fully plated
metal through hole, fully plated metal through hole, solid metal
heat-conductive via, and hollow heat-conductive via. The second
heat-conductive structure is a hollow heat-conductive via or a
solid heat-conductive via.
[0018] First and second circuit layers are disposed on the first
and second dielectric layers respectively. The first circuit layer
has a plurality of first and second electrically connecting pads
thereon. The second circuit layer has a plurality of first
electrically connecting pads thereon.
[0019] An insulating protective layer is disposed on the first and
second dielectric layers. An insulating protective layer opening is
disposed in the insulating protective layer to expose the first
heat-conductive structure in the first opening of the first
dielectric layer and expose the first and second electrically
connecting pads. A first conductive element, such as a solder ball
or a metal pin, is disposed on the first electrically connecting
pads in the insulating protective layer opening.
[0020] A heat-dissipating element, such as a solder ball or a metal
pin, is disposed on the exposed surface of the second
heat-conductive structure. The heat-conductive package structure of
the present invention further includes a second conductive element
for electrically connecting the electrode pads on the semiconductor
component and the second electrically connecting pads on the first
circuit layer.
[0021] The semiconductor component is a chipset having a first
semiconductor chip and a second semiconductor chip. The first and
second semiconductor chips are active chips or passive chips. A
plurality of electrode pads are disposed on the active surfaces of
the first and second semiconductor chips. The second conductive
element electrically connects the electrode pads on the first and
second semiconductor chips and the second electrically connecting
pads on the first circuit layer. The second conductive element is a
metal wire.
[0022] First and second heat-conductive structures are provided for
the carrier board and the second dielectric layer. A
heat-dissipating element, such as a solder ball or a metal pin, is
disposed on the exposed surface of the second heat-conductive
structure. A first opening is formed in the carrier board to
receive the semiconductor component and enable the semiconductor
component to be mounted on the heat-conductive structure. Hence,
heat generated by the semiconductor component in operation is
transferred to a heat-dissipating element outside the carrier
board, via the heat-conductive structure, for heat dissipation.
Accordingly, the heat-conductive package structure of the present
invention prevents a semiconductor component and a circuit board
from being overheated and damaged, and prolongs the life of the
semiconductor component and the circuit board.
BRIEF DESCRIPTION OF THE DRAWINGS
[0023] FIG. 1 is a cross-sectional view showing a semiconductor
component mounted on a conventional circuit board in the prior
art;
[0024] FIG. 2A is a cross-sectional view showing a semiconductor
component mounted on another conventional circuit board in the
prior art;
[0025] FIG. 2B is a cross-sectional view showing semiconductor
components stacked up and mounted on a conventional circuit board
in the prior art;
[0026] FIGS. 3A to 3F are cross-sectional views showing a method
for fabricating a heat-conductive package structure according to
the first embodiment of the present invention;
[0027] FIG. 3A' is a cross-sectional view of another embodiment
shown in FIG. 3A;
[0028] FIG. 3F' is a cross-sectional view showing semiconductor
chips stacked up and mounted on a heat-conductive package structure
according to the present invention;
[0029] FIGS. 4A and 4B are cross-sectional views showing a method
for fabricating a heat-conductive package structure according to
the second embodiment of the present invention; and
[0030] FIGS. 5A to 5C are cross-sectional views showing a method
for fabricating a heat-conductive package structure according to
the third embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0031] The following illustrative embodiments are provided to
illustrate the disclosure of the present invention, these and other
advantages and effects can be apparent to those skilled in the art
after reading the disclosure of this specification.
[0032] FIGS. 3A to 3F are cross-sectional views showing a method
for fabricating a heat-conductive package structure according to
the first embodiment of the present invention.
[0033] Referring to FIGS. 3A and 3A', a carrier board is provided.
The carrier board is a circuit board 20 with a circuit 201 or an
insulated board. The first embodiment is exemplified by a circuit
board 20 with a circuit 201. The circuit board 20 includes a first
surface 20a, a second surface 20b opposing to the first surface
20a, and at least a through opening 200 passing the first surface
20a and the second surface 20b. In the through opening 200, a first
heat-conductive structure 21a is formed. The first heat-conductive
structure 21a is not electrically connected to the circuit 201 and
can be a non-fully plated metal through hole, as shown in FIG. 3A.
Alternatively, a first heat-conductive structure 21a' is formed in
the through opening 200, and the heat-conductive structure 21a' can
be a fully plated metal through hole, as shown in 3A'. The first
heat-conductive structure 21a, 21a' includes a heat-conductive hole
210a, 210a' in the through opening 200, a first heat-conductive
sheet 211a, 211a' on the first surface 20a of the carrier board,
and a second heat-conductive sheet 212a, 212a' on the second
surface 20b of the carrier board. The first heat-conductive sheet
211a, 211a' and the second heat-conductive sheet 212a, 212a' are
conductively connected by the heat-conductive hole 210a, 210a'.
Hereinafter the first embodiment is exemplified by the first
heat-conductive structure 21a which is a plated through hole.
[0034] Referring to FIG. 3B, the first surface 20a and the second
surface 20b of the circuit board 20 are formed with a first
dielectric layer 22a and a second dielectric layer 22b
respectively. In the first dielectric layer 22a, at least a first
opening 220a is formed to expose the first heat-conductive sheet
211a of the first heat-conductive structure 21a. In the second
dielectric layer 22b, at least a second opening 220b is formed to
expose a portion of the second heat-conductive sheet 212a of the
first heat-conductive structure 21a.
[0035] Referring to FIG. 3C, first and second circuit layers 23a,
23b are formed on the first and second dielectric layers 22a, 22b
respectively. The first circuit layer 23a is formed with a
plurality of first electrically connecting pads 231a and second
electrically connecting pads 232a. The second circuit layer 23b is
formed with a plurality of third electrically connecting pads 231b.
A second heat-conductive structure 21b, such as a heat-conductive
via, is formed in the second opening 220b of the second dielectric
layer 22b. The second heat-conductive structure 21b is not
electrically connected to the second circuit layer 23b, but is in
contact with the second heat-conductive sheet 212a of the first
heat-conductive structure 21a. A plated through hole 233 is formed
in the circuit board 20, first dielectric layer 22a, second
dielectric layer 22b, and first and second circuit layers 23a, 23b
so as to electrically connect the circuit 201 of the circuit board
20 and the first or second circuit layer 23a, 23b.
[0036] Referring to FIG. 3D, an insulating protective layer 24 is
formed on the first dielectric layer 22a and first circuit layer
23a, as well as on the second dielectric layer 22b and second
circuit layer 23b, respectively. An insulating protective layer
opening 240 is formed in the insulating protective layer 24 to
expose the first heat-conductive sheet 211a of the first
heat-conductive structure 21a in the first opening 220a of the
first dielectric layer 22a, the surface of second heat-conductive
structure 21b in the second opening 220b of the second dielectric
layer 22b, and surfaces of the first, second and third electrically
connecting pads 231a, 232a, 231b.
[0037] Referring to FIG. 3E, a metal protective layer 234 made of
nickel/gold (by nickel-plating and then gold-plating) is formed on
the surface of the second heat-conductive structure 21b and the
surfaces of the first, second and third electrically connecting
pads 231a, 232a, 231b, and then a heat-dissipating element 25, such
as a solder ball, is formed on the metal protective layer 234 on
the surface the second heat-conductive structure 21b, thereby
allowing the heat-dissipating element 25 to be connected to the
second heat-conductive structure 21b and the first heat-conductive
structure 21a. A first conductive element 26, such as a solder
ball, may be formed on the metal protective layer 234 on the
surfaces of the first and third electrically connecting pads 231a,
231b, wherein the first conductive elements 26 on the first
electrically connecting pads 231a can be mounted with one passive
component or other package structure (FIG. not shown).
[0038] Referring to FIG. 3F, a semiconductor component 27 is
received in the first opening 220a of the first dielectric layer
22a in which the semiconductor component 27 is an active chip or a
passive chip and includes an active surface 27a and an inactive
surface 27b. The semiconductor component 27 is mounted on the first
heat-conductive sheet 211a exposed from the first opening 220a of
the first dielectric layer 22a, via the inactive surface 27b. Heat
generated by the semiconductor component 27 in operation is
dissipated by the first heat-conductive sheet 211a, the
heat-conductive hole 210a, the second heat-conductive sheet 212a,
the second heat-conductive structure 21b, and the heat-dissipating
element 25.
[0039] The semiconductor component 27 has a plurality of electrode
pads 271 on the active surface 27a. A plurality of second
conductive elements 28 are electrically connected to the metal
protective layer 234 on the second electrically connecting pads
232a of the first circuit layer 23a. As a result, the semiconductor
component 27 is electrically connected to the first circuit layer
23a. An encapsulant 29 encapsulates and thereby protects the
wire-bonded second conductive element 28 and semiconductor
component 27.
[0040] Referring to FIG. 3F', the semiconductor component 27 is a
chipset having a first semiconductor chip 27' and a second
semiconductor chip 27''. The first semiconductor chip 27' and the
second semiconductor chip 27'' are active chips or passive chips.
The first semiconductor chip 27' and the second semiconductor chip
27'' have a plurality of electrode pads 271', 271'' on the active
surfaces 27a', 27a'' respectively. The electrode pads 271', 271''
of the first and second semiconductor chips 27', 27'' are
electrically connected to the second electrically connecting pads
232a on the first circuit layer 23a via the second conductive
element 28.
[0041] FIGS. 4A and 4B are cross-sectional views showing another
embodiment of the present invention. Referring to FIG. 4A, the
first and second heat-conductive sheets are further formed with a
metal layer thereon. Referring to FIG. 4A, the second
heat-conductive structure 21b is a hollow heat-conductive via.
Referring to FIG. 4B, the second heat-conductive structure 21b' is
a solid heat-conductive via.
[0042] As shown in FIG. 4A, a metal layer 202 is formed on the
circuit 201 on the first surface 20a and the second surface 20b of
the circuit board 20, and the metal layer 202 covers the first and
second heat-conductive sheets 211a, 212a of the first
heat-conductive structure 21a. As a result, the metal layer 202
covers the first and second heat-conductive sheets 211a, 212a at
both ends of the heat-conductive hole 210a (the heat-conductive
hole 210a is, for example, an non-fully plated metal through hole)
so as to increase the area of contact between the first
heat-conductive structure 21a and the semiconductor component 27,
so as to enhance the efficiency of heat transfer.
[0043] Referring to FIG. 4B, the second heat-conductive structure
21b' in the second dielectric layer 22b is a solid heat-conductive
via, and the first and second heat-conductive sheets 211a, 212a of
the first heat-conductive structure 21a are covered with the metal
layer 202. Thus, the second heat-conductive structure 21b' is
mounted on a central portion of the first heat-conductive structure
21a so as to increase layout density.
[0044] Referring to FIGS. 5A to 5C, which are cross-sectional views
of yet another embodiment of the present invention, the first
heat-conductive structure is a solid heat-conductive via or a
hollow heat-conductive via, and the second heat-conductive
structure is a solid heat-conductive via or a hollow
heat-conductive via.
[0045] Referring to FIG. 5A, a heat-conductive hole 210a'' in the
circuit board 20 is a hollow heat-conductive via, and the second
heat-conductive structure 21b is a hollow heat-conductive via as
well. The structural similarity between the heat-conductive hole
210a'' and the second heat-conductive structure 21b makes the
fabrication process simpler.
[0046] Referring to FIG. 5B, the heat-conductive hole 210a'' in the
circuit board 20 is a hollow heat-conductive via, and the second
heat-conductive structure 21b' is a solid heat-conductive via.
Hence, the second heat-conductive structure 21b' enhances the
efficiency of heat transfer.
[0047] Referring to FIG. 5C, a heat-conductive hole 210a' in the
circuit board 20 is a solid heat-conductive via, and the second
heat-conductive structure 21b' is a solid heat-conductive via as
well. Thus, the heat-conductive hole 210a' and the second
heat-conductive structure 21b' enhance the efficiency of heat
transfer.
[0048] According to the present invention, a heat-conductive
package structure includes a carrier board, a first heat-conductive
structure 21a, a first dielectric layer 22a, a second dielectric
layer 22b, a first dielectric layer 22a, a second dielectric layer
22b, a first circuit layer 23a, a second circuit layer 23b, a
semiconductor component 27, an insulating protective layer 24 and a
heat-dissipating element 25. The carrier board is formed with a
circuit 201 or an insulated board, and has a first surface 20a, a
second surface 20b opposing to the first surface 20a, and at least
a through opening 200 passing the first surface 20a and the second
surface 20b. The first heat-conductive structure 21a has a
heat-conductive hole 210a in the through opening 200, a first
heat-conductive sheet 211a on the first surface 20a of the carrier
board, and a second heat-conductive sheet 212a on the second
surface 20b of the carrier board, wherein the first and second
heat-conductive sheets 211a, 212a are conductively connected by the
heat-conductive hole 210a. The first dielectric layer 22a and a
second dielectric layer 22b are disposed on the first surface 20a
and the second surface 20b of the circuit board 20 respectively,
wherein a first opening 220a is formed in the first dielectric
layer 22a to expose the first heat-conductive sheet 211a, and at
least a second opening 220b is formed in the second dielectric
layer 22b to expose a portion of the second heat-conductive sheet
212a. The second heat-conductive structure 21b is formed in the
second opening 220b. The first circuit layer 23a and a second
circuit layer 23b are formed on the first and second dielectric
layers 22a, 22b respectively, wherein the first circuit layer 23a
is formed with a plurality of first electrically connecting pads
231a and second electrically connecting pads 232a, and the second
circuit layer 23b is formed with a plurality of third electrically
connecting pads 231b. The semiconductor component 27 is received in
the first opening 220a of the first dielectric layer 22a. The
semiconductor component 27 is an active chip or a passive chip, has
an active surface 27a and an inactive surface 27b, and is mounted
on the first heat-conductive structure 21a exposed from the first
opening 220a of the first dielectric layer 22a via the inactive
surface 27b. The insulating protective layer 24 is formed on the
first and second dielectric layers 22a, 22b and the first and
second circuit layers 23a, 23b, and is formed with an insulating
protective layer opening 240 for exposing the first heat-conductive
structure 21a in the first opening 220a of the first dielectric
layer 22a, the second heat-conductive structure 21b in the second
dielectric layer 22b, and the first, second and third electrically
connecting pads 231a, 232a, 231b. The heat-dissipating element 25
is formed on the second heat-conductive structure 21b in the
insulating protective layer opening 240.
[0049] A metal protective layer 234 made of nickel/gold (by
nickel-plating and then gold-plating) is formed on the surface of
the second heat-conductive structure 21b exposed from the
insulating protective layer opening 240 and the surfaces of the
first, second and third electrically connecting pads 231a, 232a,
231b. A first conductive element 26, such as a solder ball, is
formed on the metal protective layer 234 on the first and third
electrically connecting pads 231a, 231b. An encapsulant 29
encapsulates and thereby protects the wire-bonded second conductive
element 28 and semiconductor component 27.
[0050] The heat-conductive hole 210a of the first heat-conductive
structure 21a is an non-fully plated metal through hole, a fully
plated metal through hole, a solid metal heat-conductive via, or a
hollow heat-conductive via. The second heat-conductive structure
21b is a hollow heat-conductive via or a solid heat-conductive via.
The heat-dissipating element 25 and the first conductive element 26
are solder balls or metal pins.
[0051] According to the present invention, a heat-conductive
package structure further includes a metal layer 202 formed on the
circuit 201 on the first surface 20a and the second surface 20b of
the circuit board 20 and covering the first heat-conductive
structure 21a.
[0052] According to the present invention, a heat-conductive
package structure includes a carrier board formed with first and
second heat-conductive structures therein, wherein a semiconductor
component is mounted on the first heat-conductive structure. Thus,
the heat generated by the semiconductor component in operation is
transferred to an external heat-dissipating element by means of the
first and second heat-conductive structures. Hence, the present
invention provides a heat transfer path for a semiconductor
component to enhance heat dissipation of the semiconductor
component, prevents the semiconductor component and the circuit
board from damage, and enhances electrical performance of the
circuit board.
[0053] The above embodiments only illustrate the principles of the
present invention, and they should not be construed as to limit the
present invention in any way. The above embodiments can be modified
or altered by those with ordinary skills in the art without
departing from the spirit and scope of the present invention as
defined in the following appended claims.
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