U.S. patent application number 12/118775 was filed with the patent office on 2008-09-04 for semiconductor package having enhanced heat dissipation and method of fabricating the same.
This patent application is currently assigned to SAMSUNG ELECTRONICS CO., LTD.. Invention is credited to Yun-hyeok IM, Sang-uk KIM.
Application Number | 20080213992 12/118775 |
Document ID | / |
Family ID | 36639469 |
Filed Date | 2008-09-04 |
United States Patent
Application |
20080213992 |
Kind Code |
A1 |
KIM; Sang-uk ; et
al. |
September 4, 2008 |
SEMICONDUCTOR PACKAGE HAVING ENHANCED HEAT DISSIPATION AND METHOD
OF FABRICATING THE SAME
Abstract
A semiconductor package comprising a semiconductor chip and a
first heat spreader adhered to the upper surface of the
semiconductor chip is provided. The first heat spreader comprises a
flat metal plate and a plurality of metal balls adhered to the flat
metal plate. A method of fabricating the semiconductor chip package
is also provided.
Inventors: |
KIM; Sang-uk; (Asan-si,
KR) ; IM; Yun-hyeok; (Yongin-si, KR) |
Correspondence
Address: |
VOLENTINE & WHITT PLLC
ONE FREEDOM SQUARE, 11951 FREEDOM DRIVE SUITE 1260
RESTON
VA
20190
US
|
Assignee: |
SAMSUNG ELECTRONICS CO.,
LTD.
Suwon-si
KR
|
Family ID: |
36639469 |
Appl. No.: |
12/118775 |
Filed: |
May 12, 2008 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11313721 |
Dec 22, 2005 |
7388286 |
|
|
12118775 |
|
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Current U.S.
Class: |
438/613 ;
257/E21.476; 257/E23.092 |
Current CPC
Class: |
H01L 2224/48247
20130101; H01L 2924/16152 20130101; H01L 23/4334 20130101; H01L
2924/01029 20130101; H01L 2924/00014 20130101; H01L 2224/73253
20130101; H01L 24/73 20130101; H01L 2224/73265 20130101; H01L
2224/73207 20130101; H01L 2224/73265 20130101; H01L 2924/15311
20130101; H01L 2224/73265 20130101; H01L 2224/48227 20130101; H01L
2224/48247 20130101; H01L 2224/32225 20130101; H01L 2224/32225
20130101; H01L 2224/48227 20130101; H01L 2224/73253 20130101; H01L
2924/00 20130101; H01L 2224/32225 20130101; H01L 2924/00 20130101;
H01L 2224/45015 20130101; H01L 2924/207 20130101; H01L 2224/45099
20130101; H01L 2924/00 20130101; H01L 2924/15311 20130101; H01L
2924/00014 20130101; H01L 2924/16152 20130101; H01L 2224/73265
20130101; H01L 23/3128 20130101; H01L 2924/00014 20130101; H01L
24/48 20130101; H01L 2224/48227 20130101; H01L 2224/32225 20130101;
H01L 2924/01079 20130101 |
Class at
Publication: |
438/613 ;
257/E21.476 |
International
Class: |
H01L 21/44 20060101
H01L021/44 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 5, 2005 |
KR |
10-2005-0000805 |
Claims
1. A method of fabricating a semiconductor package, comprising:
adhering a semiconductor chip to a top surface of a substrate;
adhering metal balls to a flat metal plate; forming a first heat
spreader by cutting the flat metal plate in accordance with a size
of an upper surface of the semiconductor chip; adhering the first
heat spreader to the upper surface of the semiconductor chip; and,
adhering a ball terminal to a ball terminal land formed on a bottom
surface of the substrate.
2. The method of claim 1, further comprising coating the upper
surface of the semiconductor chip with a polyamide material.
3. The method of claim 1, wherein adhering metal balls to the flat
metal plate comprises adhering the metal balls to the metal plate
through a metal bonding method.
4. The method of claim 1, wherein adhering metal balls to the flat
metal plate comprises adhering the metal balls to the metal plate
using a reflow process.
5. The method of claim 1, wherein adhering metal balls to the flat
metal plate comprises adhering the metal balls to the metal plate
with an adhesive.
6. The method of claim 1, further comprising: molding the
semiconductor chip and the substrate with a molding material
leaving an upper surface of the first heat spreader exposed after
adhering the first heat spreader to the upper surface of the
semiconductor chip; adhering a heat sink plate to the molded
semiconductor chip, wherein the heat sink plate covers the first
heat spreader; and, adhering a heat sink to the heat sink
plate.
7. The method of claim 1, further comprising forming a second heat
spreader on the first heat spreader.
8. The method of claim 7, wherein an upper surface of the first
heat spreader contacts an inside surface of the second heat
spreader.
9. The method of claim 7, further comprising heating an upper
surface of the second heat spreader using an infrared ray in order
to reflow the metal balls of the first heat spreader to firmly
connect the metal balls to an inside surface of the second heat
spreader.
10. The method of claim 7, wherein the inside surface of the second
spreader contacts an upper surface of the molding material and the
upper surface of the first heat spreader.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This is a divisional of U.S. application Ser. No.
11/313,721, filed on Dec. 22, 2005, which is incorporated herein by
reference in its entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a semiconductor package and
method of fabricating the same, and more particularly, to a
semiconductor package having enhanced heat dissipation and method
of fabricating the same.
[0004] 2. Description of the Related Art
[0005] Although semiconductor device size has decreased over time,
the number of input/output pins on a semiconductor device has risen
dramatically, as has semiconductor device operational speed.
Accordingly, semiconductor devices consume more electric power per
unit volume, and generate more heat than they did previously. The
heat generated greatly increases semiconductor chip temperature,
which slows down semiconductor chip operating speed.
[0006] The heat generated by a semiconductor chip in a
semiconductor package is dissipated to the exterior of the package
mostly through a substrate, such as a printed circuit board (PCB),
while the rest of the heat is absorbed by the area surrounding the
semiconductor chip. However, the dramatic decrease in package size
has limited the amount of heat that may effectively be dissipated
through the substrate, so a large amount of heat remains in the
area surrounding the semiconductor chip. Therefore, a heat spreader
has been introduced into the semiconductor package to help the
semiconductor chip dissipate heat.
[0007] Figure (FIG.) 1 is a cross sectional view of a semiconductor
package comprising a conventional heat spreader.
[0008] Referring to FIG. 1, the semiconductor package comprises a
substrate 10, such as a printed circuit board (PCB). A circuit
pattern is formed on one side of a substrate 10, and both sides of
substrate 10 may be coated with a passivation layer 14, such as a
photo solder resist layer. A semiconductor chip 22 comprising a
plurality of bonding pads (not shown) is adhered to a top surface
of substrate 10 by a non-metallic adhesive 20 such as an epoxy
resin. Substrate 10 and semiconductor chip 22 are electrically
coupled by a wire bonding 24. A ball terminal 16 is adhered to a
ball terminal land 18 formed on a bottom surface of substrate 10.
Reference symbol 12 denotes a generic illustration of a
redistribution pattern. Redistribution pattern 12 electrically
connects the plurality of bonding pads to ball terminal lands
18.
[0009] A heat spreader 28 is molded on semiconductor chip 22 with a
molding material 26 that covers side surfaces and an upper surface
of semiconductor chip 22. Heat spreader 28 may be completely
covered by molding material 26, or it may be partially covered,
exposing an upper surface of heat spreader 28, as shown in FIG. 1.
Heat spreader 28 is formed from a material having relatively high
heat conductivity such as aluminum or copper, and a surface of heat
spreader 28 is black filmed by CuO or Cu.sub.2O to enhance heat
dissipation.
[0010] A semiconductor package comprising a conventional heat
spreader 28 has several problems. First, heat spreader 28 increases
the weight of the package, and the weight increase may decrease the
durability of the package, which may be weakened by physical shock.
That is, the circuit pattern of the package may be easily cracked
by the physical shock resulting from being dropped, for example.
However, the weight of heat spreader 28 may not be one of the
factors considered when maximizing the heat dissipation of a
semiconductor package. Secondly, since conventional heat spreader
28 is adhered to substrate 10 with epoxy resin, conventional heat
spreader 28 may cause a heat gradient between layers or elements
within the package. The heat gradient may lead to cracking of
layers or elements, such as a via, within the package during a heat
reliability test conducted after increasing the heat stress of
substrate 10. Thirdly, heat is indirectly dissipated through
molding material 26, which has a relatively low heat conductivity,
because heat spreader 28 is not connected directly to wire bonding
24.
SUMMARY OF THE INVENTION
[0011] In one embodiment, the invention provides a semiconductor
package, comprising a semiconductor chip, and a substrate having a
top surface and a bottom surface, wherein the semiconductor chip is
formed on the top surface of the substrate, and wherein a ball
terminal land is formed on the bottom surface of the substrate. The
semiconductor package also comprises a first heat spreader
comprising a flat metal plate, and a plurality of metal balls
arranged on the flat metal plate, wherein the first heat spreader
is adhered to an upper surface of the semiconductor chip. In
addition the semiconductor package comprises a ball terminal
adhered to the ball terminal land.
[0012] In another embodiment, the invention provides a
semiconductor package module comprising a plurality of
semiconductor chips, a plurality of first heat spreaders, wherein
each of the plurality of first heat spreaders is adhered to one of
the plurality of semiconductor chips, a heat sink plate adhered to
the plurality of semiconductor chips and covering each of the
plurality of first heat spreaders, and a heat sink formed on the
heat sink plate that dissipates heat to the exterior of the
semiconductor package.
[0013] In still another embodiment, the invention provides a method
of fabricating a semiconductor package that comprises adhering a
semiconductor chip to a top surface of a substrate, adhering metal
balls to a flat metal plate, forming a first heat spreader by
cutting the flat metal plate in accordance with a size of an upper
surface of the semiconductor chip, adhering the first heat spreader
to the upper surface of the semiconductor chip, and adhering a ball
terminal to a ball terminal land formed on a bottom surface of the
substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Exemplary embodiments of the invention will be described in
detail with reference to the attached drawings. Throughout the
drawings, like reference symbols denote like or similar elements.
In the drawings:
[0015] FIG. 1 is a cross sectional view of a semiconductor package
comprising a conventional heat spreader;
[0016] FIG. 2 is a perspective view of a first heat spreader 122 in
accordance with an exemplary embodiment of the present
invention;
[0017] FIG. 3 is a cross sectional view of a semiconductor package
comprising a first heat spreader in accordance with an exemplary
embodiment of the present invention;
[0018] FIG. 4 is a cross sectional view of a semiconductor package
comprising a heat sink plate 126 and a heat sink 128;
[0019] FIG. 5 is a flowchart of a method of fabricating a
semiconductor package in accordance with the exemplary embodiment
illustrated in FIG. 4;
[0020] FIG. 6 is a cross sectional view of a portion of a
semiconductor package module comprising a plurality of
semiconductor chips of the exemplary embodiment illustrated in FIG.
4;
[0021] FIG. 7 is an exploded view of the semiconductor package
module, a portion of which is illustrated by FIG. 6;
[0022] FIG. 8 is a cross sectional view of a semiconductor package
comprising a first heat spreader 122 and a second heat spreader 140
in accordance with another exemplary embodiment of the present
invention; and,
[0023] FIG. 9 is a flowchart of a method of fabricating a
semiconductor package in accordance with the exemplary embodiment
illustrated in FIG. 8.
DETAILED DESCRIPTION OF THE INVENTION
[0024] When an element is described as being "on" or being formed
"on" another element, it may be directly on or formed directly on
that other element, respectively, or intervening elements may be
present. Similarly, when an element is described as being adhered
"to" another element, it may be adhered directly to that element,
or intervening elements may be present. As used herein, the term
"adhere" is not limited to the attaching of one element to another
using an adhesive, but encompasses other methods of attaching one
element to another as well.
[0025] FIG. 2 is a perspective view of a first heat spreader 122 in
accordance with an exemplary embodiment of the present
invention.
[0026] Referring to FIG. 2, first heat spreader 122 comprises a
flat metal plate 118 and one or more metal balls 120.
[0027] Flat metal plate 118 may be formed from a material selected
from the group consisting of Al, Cu, Au, Ag, Ni, and compounds
thereof having relatively high heat conductivity. The heat
conductivity of flat metal plate 118 is preferably above 30 W/mK.
Metal balls 120 may be arranged so that they form a layer on a
semiconductor chip 112 and the arranged metal balls 120 may be
adhered to semiconductor chip 112 with an adhesive or an adhere
film (not shown), through a metal bonding method, or through a
reflow process.
[0028] Each metal ball 120 has an identical shape, and metal balls
120 may form a layer on flat metal plate 118. Preferably, each
metal ball 120 has the shape of a solder ball because metal balls
120 should each have a maximum surface area and should be easily
manufactured. In order to expand the path of heat dissipation,
metal balls 120 are also preferably connected to each other such
that they form a single body. Metal balls 120 may be formed into a
single body through a reflow process.
[0029] Metal balls 120 share a common diameter, which may vary in
accordance with the type of package in which metal balls 120 are
used. For example, in a find pitch BGA (FBGA) comprising first heat
spreader 122, metal balls 120, each having a diameter of 0.3 mm,
may be formed on flat metal plate 118 having a thickness of about
20 .mu.m.about.about 40 .mu.m to form an FBGA having a total height
of 2.3 mm. As another example, metal balls 120, each having a
diameter of 0.76 mm, may be formed on metal plate 118 having a
thickness of 0.1 .mu.m to form a plastic BGA (PBGA) having a total
height of 2.5 mm, or to form a PBGA additionally comprising a
second heat spreader 140 as shown in FIG. 8. In this exemplary
embodiment, the common diameter shared by metal balls 120 is about
0.2 mm to about 2.0 mm.
[0030] Also, a heat conductivity of the metal balls may be about 20
to 30 W/mK. However, in this exemplary embodiment, the heat
conductivity of metal balls 120 is chosen in accordance with the
package type and cost. The type, size, number, and/or arrangement
of metal balls 120 may vary according to specific design
considerations.
[0031] The present invention relates to a semiconductor package
comprising a heat spreader, and exemplary embodiments of the
invention will be described below. One exemplary embodiment of the
present invention comprises first heat spreader 122 and another
exemplary embodiment of the present invention comprises first heat
spreader 122 and second heat spreader 140, which is a conventional,
flat plate type heat spreader. A method of fabricating a
semiconductor package comprising first heat spreader 122 and second
heat spreader 140 is not limited by the related exemplary
embodiment shown in FIG. 8 and can be modified in various ways.
[0032] FIG. 3 is a cross sectional view of a semiconductor package
comprising a first heat spreader in accordance with an exemplary
embodiment of the present invention.
[0033] Referring to FIG. 3, the semiconductor package of this
exemplary embodiment comprises a substrate 100, such as a printed
circuit board (PCB). A semiconductor chip 112 is formed on a top
surface of substrate 100. Both sides (i.e., both the top surface
and a bottom surface) of substrate 100 may be coated with a
passivation layer 104, such as a photo solder resist layer, except
at an area where ball terminal lands 108 are formed. Semiconductor
chip 112 is adhered to substrate 100 by an epoxy resin layer 110.
Substrate 100 and semiconductor chip 112 are electrically coupled
by a wire bonding 114. Reference symbol 102 denotes a generic
illustration of a redistribution pattern. Redistribution pattern
102 electrically connects a plurality of bonding pads (not shown)
of semiconductor chip 112 to ball terminal lands 108.
[0034] First heat spreader 122 comprises a plurality of metal balls
120 adhered to one side of a flat metal plate 118. The other side
of flat metal plate 118 is adhered to an upper surface of
semiconductor chip 112 by a non-metallic adhesive or a non-metallic
adhere film 116. The upper surface of semiconductor chip 112 is
preferably coated with a polyamide material. The non-metallic
adhesive and non-metallic adhere film 116 may each comprise a
conductive material. The package comprising first heat spreader 122
is molded with a molding material 124. Ball terminal lands 108 are
formed on the bottom surface of substrate 100 and ball terminals
106 are adhered to ball terminal lands 108 in accordance with a
conventional method.
[0035] FIG. 4 is a cross sectional view of a semiconductor package
comprising a heat sink plate 126 and a heat sink 128.
[0036] Referring to FIG. 4, first heat spreader 122 is formed on
semiconductor chip 112, and an upper surface of first heat spreader
122 is exposed (i.e., not covered by molding material 124). One
side of heat sink plate 126 is adhered to an upper surface of
molding material 124 and covers first heat spreader 122, which is
on semiconductor chip 112. The other side of heat sink plate 126 is
adhered to heat sink 128, which dissipates heat to the exterior of
the package.
[0037] FIG. 5 is a flowchart of a method of fabricating a
semiconductor package in accordance with the exemplary embodiment
shown in FIG. 4.
[0038] Referring to FIG. 5, semiconductor chip 112 is adhered to
the top surface substrate 100 (210). Then, a plurality of metal
balls 120 is adhered to metal plate 118 through a metal bonding
method (220). First heat spreader 122 is prepared by cutting flat
metal plate 118, to which metal balls 120 are adhered, based on the
size of semiconductor chip 112 (i.e., in accordance with the size
of the upper surface of semiconductor chip 112) (230). First heat
spreader 122, as prepared in operation 230, is then adhered to the
upper surface of semiconductor chip 112 (240). Next, semiconductor
chip 112 and substrate 100 are molded with molding material 124,
but the upper surface of first heat spreader 122 is left exposed
(i.e., not covered by molding material 124) (250). In some cases,
semiconductor chip 112 and substrate 100 may be molded to
completely cover first heat spreader 122 with molding material 124.
Heat sink plate 126 is formed on molding material 124 and first
heat spreader 122 (260). That is, one side of the heat sink plate
126 covers molding material 124 and first heat spreader 122. Heat
sink 128 is adhered to the other side of heat sink plate 126 (i.e.,
the side opposite the side of heat sink plate 126 that covers
molding material 124 and first heat spreader 122) (270) and is
adapted to efficiently dissipate heat to the exterior of the
package. Ball terminals 106 are adhered to ball terminal lands 108,
which are formed on the bottom surface of substrate 100 (280).
[0039] The temperature of the upper surface of semiconductor chip
112 of this exemplary embodiment may be about 3.degree. C. to
7.degree. C. lower than the upper surface of the conventional
semiconductor chip. The temperature is measured by uniformly
maintaining a temperature of 24.degree. C. around the test area and
flowing air at 3 m/sec through the test area. In this exemplary
embodiment, the area of the upper surface of semiconductor chip 112
is about 5.5 mm.times.5.5 mm, the diameter of each metal ball 120
is about 0.5 mm, and the thickness of metal plate 118 is about 30
.mu.m.
[0040] FIG. 6 is a cross sectional view of a portion of a
semiconductor package module comprising a plurality of
semiconductor chips 112 of the exemplary embodiment illustrated in
FIG. 4, and FIG. 7 is an exploded view of the semiconductor package
module, a portion of which is illustrated by FIG. 6.
[0041] Referring to FIGS. 6 and 7, the package module comprises a
plurality of semiconductor chips 112, each of which is formed on a
top surface of a substrate 100 of a plurality of substrates 100,
wherein one of a plurality of first heat spreaders 122 is formed on
the upper surface of each semiconductor chip 112. Each
semiconductor chip 112 and the substrate 100 on which it is formed
is molded with molding material 124, and the upper surface of each
first heat spreader 122 is left exposed. Molding material 124 and
each of the exposed first heat spreaders 122 are covered by one
side of heat sink plate 126. Heat sink 128 is adhered to the other
side of heat sink plate 126. Though it is omitted in FIG. 6, the
exemplary embodiment of FIG. 6 comprises heat sink 128 as
illustrated in FIG. 4. A heat conductive material 130, such as Ag,
may be interposed between first heat spreaders 122 and heat sink
plate 126 to contribute to the effective dissipation of heat by the
semiconductor package module.
[0042] FIG. 7 is an exploded view of the semiconductor package
module, which shows a plurality of first heat spreaders 122, each
of which is adhered to a top surface of a semiconductor chip 112
(as shown in FIG. 6), wherein the semiconductor chips 112 are
located on both sides of a module board 150. Heat sinks 126 are
located on each side of module board 150, and optionally, heat
conductive material 130 can be included between heat sink 126 and
first heat spreaders 122.
[0043] FIG. 8 is a cross sectional view of a semiconductor package
comprising first heat spreader 122 and second heat spreader 140 in
accordance with another exemplary embodiment of the present
invention. Semiconductor chip 112, substrate 100, and first heat
spreader 122 of this exemplary embodiment are the same as those
elements of the exemplary embodiment described with reference to
FIG. 3.
[0044] Referring to FIG. 8, the semiconductor package of this
exemplary embodiment comprises second heat spreader 140, which is a
flat plate type heat spreader that covers side surfaces of
semiconductor chip 112 and first heat spreader 122, and the upper
surface of first heat spreader 122. Second heat spreader 140 is
formed from a material having relatively high heat conductivity
such as aluminum or copper and black-filmed by CuO or Cu.sub.2O for
maximizing the efficiency of heat dissipation. First heat spreader
122 may be contained completely inside molding material 124 or an
upper surface of first heat spreader 122 may be exposed. If first
heat spreader 122 is exposed, the exposed part of first head
spreader 122 is preferably connected to an inside surface of second
heat spreader 140. Though they are omitted in FIG. 8, the exemplary
embodiment of FIG. 8 comprises both heat sink plate 126 and heat
sink 128 as illustrated in FIG. 4.
[0045] FIG. 9 is a flowchart of a method of fabricating a
semiconductor package in accordance with the exemplary embodiment
illustrated in FIG. 8.
[0046] Referring to FIG. 9, operations 210 through 240 are
performed as described with reference to FIG. 5. Then,
semiconductor chip 112 and substrate 100 are molded with molding
material 124 (300). Second heat spreader 140 is then formed
covering side surfaces of semiconductor chip 112 and first heat
spreader 122, and the upper surface of first heat spreader 122
(310). If a portion of the plurality of metal balls 120 of first
heat spreader 122 is left exposed by molding material 124, the
exposed portion of the plurality of metal balls 120 preferably
contacts the inside surface of second heat spreader 140.
[0047] When, after forming second heat spreader 140, there is an
exposed portion of first heat spreader 122 and that exposed portion
contacts second heat spreader 140, the upper surface of second heat
spreader 140 may be heated with an infrared ray. By heating the
upper surface of second heat spreader 140, the portion of the
plurality of metal balls 120 that is left exposed by molding
material 124 is reflowed to firmly connect that exposed portion of
the plurality of metal balls 120 to the inside surface of second
heat spreader 140.
[0048] After operation 310, semiconductor chip 112 and substrate
100 are molded with the molding material 124, but the upper surface
of second heat spreader 140 is left exposed (320). Heat sink plate
126 is then formed on molding material 124 and the exposed upper
surface of second heat spreader 140 (330). That is, one side of
heat sink plate 126 is adhered to molding material 124 and also
covers the exposed upper surface of second heat spreader 140. Then,
heat sink 128 is formed on heat sink plate 126 (340) so that heat
may be efficiently dissipated to the exterior of the package. That
is, heat sink 128 is adhered to the other side of heat sink plate
126 (i.e., the side opposite the side of heat sink plate 126 that
was adhered to molding material 124). After forming heat sink 128,
ball terminals 106 are adhered to ball terminal lands 108, which
are formed on the bottom surface of substrate 100 (350).
[0049] In a semiconductor package comprising first heat spreader
122 and second heat spreader 140, as described above, the
temperature of the upper surface of semiconductor chip 112 may be
about 8.degree. C. to 15.degree. C. lower than the temperature of
an upper surface of a semiconductor chip in a package that does not
comprise first heat spreader 122 and second heat spreader 140. As
described above, heat dissipation is greatly improved in the
exemplary embodiment that comprises second heat spreader 140
combined with first heat spreader 122 as compared to a conventional
device. The conditions used in measuring the temperature for this
exemplary embodiment are identical to the previously described
conditions that are used in measuring the temperature of the
exemplary embodiment illustrated in FIG. 4.
[0050] In accordance with the previously described semiconductor
package and the method of fabricating the same, a package
comprising the first heat spreader adhered to the semiconductor
chip has enhanced heat dissipation and effectively emits heat
generated by the semiconductor chip to the exterior of the
package.
[0051] Also, the heat dissipation of a semiconductor package is
greatly improved over that of a conventional package by using the
first heat spreader in combination with the conventional second
heat spreader, and the resulting heat dissipation improvement
outweighs the relative increase in package weight that accompanies
using the second heat spreader.
[0052] The exemplary embodiments of the present invention described
above utilize ball terminals, such as solder balls, but the
invention is not limited to only the use of solder balls. Rather,
it encompasses other types of ball terminals such as what are
commonly referred to in the art as solder bumps. As used herein,
the term "ball terminals" encompasses at least solder balls, solder
bumps, and equivalent structures.
[0053] While the present invention has been particularly shown and
described with reference to exemplary embodiments of the invention,
it will be understood by those of ordinary skill in the art that
various changes in form and detail may be made therein without
departing from the scope of the present invention as defined by the
following claims.
* * * * *