U.S. patent application number 11/699942 was filed with the patent office on 2008-07-03 for light-emitting diode structure and method for manufacturing the same.
This patent application is currently assigned to Epitech Technology Corporation. Invention is credited to Chao-Hsing Chen, Chien-Kai Chung, Chi-Ming Huang, Tsun-Kai Ko, Cheng-Ta Kuo, Shih-Wei Yeh, Kuo-Hui Yu.
Application Number | 20080157097 11/699942 |
Document ID | / |
Family ID | 39582548 |
Filed Date | 2008-07-03 |
United States Patent
Application |
20080157097 |
Kind Code |
A1 |
Kuo; Cheng-Ta ; et
al. |
July 3, 2008 |
Light-emitting diode structure and method for manufacturing the
same
Abstract
A light-emitting diode (LED) structure and a method for
manufacturing the LED structure are disclosed for promoting the
recognition rate of LED chips, wherein a roughness degree of the
surface under a first electrode pad of a first conductivity type is
made similar to that of the surface under a second electrode pad of
a second conductivity type, so that the luster shown from the first
electrode pad can be similar to that from the second electrode pad,
thus resolving the poor recognition problem of wire-bonding
machines caused by different lusters from the first and second
electrode pads.
Inventors: |
Kuo; Cheng-Ta; (Hsinchu
City, TW) ; Yu; Kuo-Hui; (Chia Yi Hsien, TW) ;
Chen; Chao-Hsing; (Xinying City, TW) ; Ko;
Tsun-Kai; (Yuanlin Town, TW) ; Huang; Chi-Ming;
(Xinshi Shiang, TW) ; Yeh; Shih-Wei; (Guanmiau
shiang, TW) ; Chung; Chien-Kai; (Xinhua Town,
TW) |
Correspondence
Address: |
KINNEY & LANGE, P.A.
THE KINNEY & LANGE BUILDING, 312 SOUTH THIRD STREET
MINNEAPOLIS
MN
55415-1002
US
|
Assignee: |
Epitech Technology
Corporation
Tainan County
TW
|
Family ID: |
39582548 |
Appl. No.: |
11/699942 |
Filed: |
January 30, 2007 |
Current U.S.
Class: |
257/79 ;
257/E33.001; 438/42 |
Current CPC
Class: |
H01L 33/38 20130101;
H01L 33/20 20130101; H01L 33/382 20130101; H01L 2933/0016
20130101 |
Class at
Publication: |
257/79 ; 438/42;
257/E33.001 |
International
Class: |
H01L 33/00 20060101
H01L033/00; H01L 21/00 20060101 H01L021/00 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 29, 2006 |
TW |
95150037 |
Claims
1. A light-emitting diode (LED) structure comprising: a substrate;
a first confining layer having a first electrical property, wherein
the first confining layer is disposed on the substrate; a
light-emitting epitaxial structure disposed on a first portion of
the first confining layer, wherein the light-emitting epitaxial
structure comprises; an active layer disposed on the first portion
of the confining layer; and a second confining layer having a
second electrical property, wherein the second confining layer is
disposed on the active layer, and the first electrical property is
opposite to the second electrical property; a protrusive structure
disposed on a second portion of the first confining layer, wherein
the protrusive structure is spaced from the light-emitting
epitaxial structure by a predetermined gap exposing the first
confining layer, and the material layers forming the protrusive
structure are substantially equivalent to the material layers
forming the light-emitting epitaxial structure with respect to
material species and arrangement sequence, and a thickness of the
material layers forming the protrusive structure is smaller than or
equal to a thickness of the material layers forming the
light-emitting epitaxial structure; a n-type electrode pad covering
the protrusive structure, wherein the n-type electrode pad is
electrically connected to the first confining layer; and a p-type
electrode pad disposed on the second confining layer.
2. The light-emitting diode structure according to claim 1, further
comprising: a buffer layer disposed between the substrate and the
first confining layer.
3. The light-emitting diode structure according to claim 2, wherein
the buffer layer further comprises: a low-temperature buffer layer
disposed on the substrate; and a high-temperature buffer layer
disposed on the low-temperature buffer layer.
4. The light-emitting diode structure according to claim 1, wherein
the material forming the substrate is selected from the group
consisting of sapphire, ZnO, LiGaO.sub.2, spinel, SiC, GaN and
silicon.
5. The light-emitting diode structure according to claim 1, wherein
the first electrical property is n type, and the second electrical
property is p type.
6. The light-emitting diode structure according to claim 1, wherein
the protrusive structure is composed of a plurality of protrusive
structure units.
7. The light-emitting diode structure according to claim 1, further
comprising: a transparent electrode layer disposed on a top surface
of the light-emitting epitaxial structure, wherein the p-type
electrode pad is disposed on the transparent electrode layer.
8. The light-emitting diode structure according to claim 1, further
comprising a transparent electrode layer disposed on a top surface
of the protrusive structure, wherein the n-type electrode pad
covers the protrusive structure and the transparent electrode
layer.
9. A method for manufacturing a light-emitting diode structure,
comprising: providing a substrate; forming a first confining layer
having a first electrical property on the substrate; forming an
active layer on the confining layer; forming a second confining
layer having a second electrical property on the active layer,
wherein the first electrical property is opposite to the second
electrical property; coating a photoresist layer on a surface of
the second confining layer, wherein the photoresist layer has a
predetermined gap; etching the second confining layer and the
active layer along the predetermined gap by using the photoresist
layer as a mask; removing the photoresist layer, thereby forming a
light-emitting epitaxial structure and a protrusive structure;
fabricating a n-type electrode pad covering the protrusive
structure, wherein the n-type electrode pad is electrically
connected to the first confining layer; and fabricating a p-type
electrode pad on a top surface of the light-emitting epitaxial
structure.
10. The method according to claim 9, further comprising: forming a
buffer layer between the substrate and the first confining
layer.
11. The method according to claim 9, further comprising:
respectively forming a low-temperature buffer layer and a
high-temperature buffer layer between the substrate and the first
confining layer, wherein the low-temperature buffer layer is
disposed on the substrate, and the high-temperature buffer layer is
disposed on the low-temperature buffer layer.
12. The method according to claim 9, wherein the material forming
the substrate is selected from the group consisting of sapphire,
ZnO, LiGaO.sub.2, spinel, SiC, GaN and silicon.
13. The method according to claim 9, wherein the first electrical
property is n type, and the second electrical property is p
type.
14. The method according to claim 9, wherein the protrusive
structure is composed of a plurality of protrusive structure
units.
15. The method according to claim 9, further comprising: forming a
transparent electrode layer on a top surface of the light-emitting
epitaxial structure; and forming the p-type electrode pad on the
transparent electrode layer.
16. The method according to claim 9, further comprising: forming a
transparent electrode layer on a top surface of the protrusive
structure; and forming the n-type electrode pad covering the
protrusive structure and the transparent electrode layer.
Description
RELATED APPLICATIONS
[0001] The present application is based on, and claims priority
from, Taiwan Application Serial Number 95150037, filed Dec. 29,
2006, the disclosure of which is hereby incorporated by reference
herein in its entirety.
FIELD OF THE INVENTION
[0002] The present invention relates to a light-emitting diode
(LED) structure and a method for manufacturing the same, and more
particularly, to a LED structure and its manufacturing method for
promoting the LED chip recognition rate.
BACKGROUND OF THE INVENTION
[0003] Referring to FIG. 1, FIG. 1 is a schematic cross-sectional
view showing a conventional LED structure, wherein on a substrate
100, a buffer layer 110 and a n-type confining layer 120 are formed
in sequence. An active layer 130, a p-type confining layer 140, a
transparent electrode layer 150 and a p-type electrode pad 160 are
formed on one portion of the n-type confining layer 120, and a
n-type electrode pad 170 is formed on the other portion of the
n-type confining layer 120. The n-type electrode pad 170 is spaced
from a light-emitting epitaxial structure 180 by a predetermined
gap d, wherein the light-emitting epitaxial structure 180 is
composed of the active layer 130, the p-type confining layer 140
and the transparent electrode layer 150.
[0004] After a LED structure is formed, it is desirable to perform
the subsequent processes of die bonding and wire bonding. The die
bonding or wire bonding process mainly uses an image comparison and
recognition method to select a LED chip matching a predetermined
reference image. At this point, in the conventional LED structure,
due to the etching process, the surface roughness of the epitaxial
layers (the p-type confining layer 140 and the transparent
electrode layer 150) under the p-type electrode pad 160 is
different from that of the epitaxial layers (the n-type confining
layer 120) under the n-type electrode pad 170, and thus the light
scattering and reflected intensities of the p-type electrode pad
160 are inconsistent with those of the n-type electrode pad 170,
thus lowering the image recognition rate, leading to the increase
of downtime ratio, further causing the occurrence of abnormalities
or the decrease of production, and resulting in rough surface
textures.
[0005] The conventional skill adopts the method of adjusting etch
parameters to make the surface roughnesses of the epitaxial layers
under these two electrode pads as similar as possible. However, the
respective conditions are different for each product lot, so that
the conventional method of adjusting the etch parameters is
significantly limited and it is difficult to make the surface
roughnesses of the epitaxial layers under these two electrode pads
reach the same level, thus causing recognition difficulty in the
processes of die bonding and wire bonding. Moreover, this
conventional skill has to adjust the etch parameter for each
individual product lot, and thus is not suitable for use in mass
production.
SUMMARY OF THE INVENTION
[0006] An aspect of the present invention is to provide a LED
structure and a method for manufacturing the same, thereby making
the epitaxial layers under two electrode pads have similar surface
roughnesses for forming two electrode pads of similar lusters, thus
promoting the image recognition rate and accuracy in the processes
of die bonding and wire bonding, further increasing the overall
production, decreasing the amount of inferior products, and
improving the problem of rough surface textures.
[0007] According to an embodiment of the present invention, the LED
structure includes a substrate, a first confining layer having a
first electrical property, a light-emitting epitaxial structure
disposed on a first portion of the first confining layer, a
protrusive structure disposed on a second portion of the first
confining layer, a n-type electrode pad covering the protrusive
structure, and a p-type electrode pad disposed on a second
confining layer having a second electrical property. The first
confining layer is disposed on the substrate. The light-emitting
epitaxial structure includes an active layer disposed on the first
portion of the confining layer, and the second confining layer
disposed on the active layer, wherein the first electrical property
is opposite to the second electrical property. The protrusive
structure is spaced from the light-emitting epitaxial structure by
a predetermined gap exposing the first confining layer. The
material layers forming the protrusive structure are substantially
equivalent to the material layers forming the light-emitting
epitaxial structure with respect to the material species and
arrangement sequence, and the thickness of the material layers
forming the protrusive structure is smaller than or equal to the
thickness of the material layers forming the light-emitting
epitaxial structure. The n-type electrode pad is electrically
connected to the first confining layer.
[0008] According to an embodiment of the present invention, in a
method for manufacturing a light-emitting diode structure, a
substrate is provided. Then, a first confining layer having a first
electrical property is formed on the substrate. Thereafter, an
active layer is formed on the confining layer, and a second
confining layer having a second electrical property is formed on
the active layer, wherein the first electrical property is opposite
to the second electrical property. Then, a photoresist layer is
coated on a surface of the second confining layer, wherein the
photoresist layer has a predetermined gap. Thereafter, a step is
performed for etching the second confining layer and the active
layer along the predetermined gap by using the photoresist layer as
a mask, and then the photoresist layer is removed so as to form a
light-emitting epitaxial structure and a protrusive structure.
Then, a n-type electrode pad is fabricated to cover the protrusive
structure, wherein the n-type electrode pad is electrically
connected to the first confining layer. Thereafter, a p-type
electrode pad is formed on a top surface of the light-emitting
epitaxial structure.
[0009] According to another embodiment of the present invention,
the LED structure further comprises a buffer layer disposed between
the substrate and the first confining layer.
[0010] According to another embodiment of the present invention,
the LED structure further comprises a low-temperature buffer layer
disposed on the substrate, and a high-temperature buffer layer
disposed on the low-temperature buffer layer.
[0011] According to another embodiment of the present invention,
the LED structure further comprises transparent electrode layers
disposed on a top surface of the light-emitting epitaxial structure
and on a top surface of the protrusive structure.
[0012] According to another embodiment of the present invention,
the first electrical property is n type, and the second electrical
property is p type.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The foregoing aspects and many of the attendant advantages
of this invention are more readily appreciated as the same become
better understood by reference to the following detailed
description, when taken in conjunction with the accompanying
drawings, wherein:
[0014] FIG. 1 is a schematic cross-sectional view showing a
conventional LED structure; and
[0015] FIG. 2A to FIG. 2E are schematic cross-sectional diagrams
showing the process for manufacturing a light-emitting diode
structure in accordance with an embodiment of the present
invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0016] An embodiment of the present invention shown hereinafter is
used to resolve the problem of poor image recognition and rough
surface textures caused by different levels of surface roughness of
the epitaxial layers under two respective electrode pads. The
embodiment of the present invention reserves a complete epitaxial
structure (protrusive structure) in the area under a n-type
electrode pad, and the protrusive structure is substantially
equivalent to a light-emitting epitaxial structure under a p-type
electrode pad, wherein the thickness of the material layers forming
the protrusive structure is smaller than or equal to the thickness
of the material layers forming the light-emitting epitaxial
structure, thereby making the surface roughnesses of the epitaxial
layers under these two electrode pads as similar as possible, thus
resolving the problem of rough surface textures. Moreover, a
portion of the n-type electrode pad directly contacts a n-type
epitaxial layer so as to assure that no change would occur in the
electrical properties of the LED. In order to make the illustration
of the present invention more explicit, the following description
is provided with reference to FIG. 2A to FIG. 2E. FIG. 2A to FIG.
2E are schematic cross-sectional diagrams showing the process for
manufacturing a light-emitting diode structure in accordance with
an embodiment of the present invention, wherein FIG. 2E is
schematic cross-sectional view showing the LED structure in
accordance with the embodiment of the present invention.
[0017] As shown in FIG. 2A, a substrate 200 is first provided,
wherein the material forming the substrate 200 can be such as
sapphire, ZnO, LiGaO.sub.2, spinel, SiC, GaN or silicon.
Thereafter, a low-temperature buffer layer 210 is formed on the
substrate 200, and a high-temperature buffer layer 220 is formed on
the low-temperature buffer layer 210. However, the present
embodiment may merely need to form the low-temperature buffer layer
210 or the high-temperature buffer layer 220 on the substrate 200.
Then, a first confining layer 230 having a first electrical
property is formed on the high-temperature buffer layer 220,
wherein the first confining layer 230 is made of such as GaN, and
the first electrical property is such as n-type. Thereafter, an
active layer 240 is formed on the first confining layer 230,
wherein the active layer 240 can be for example a single layer
structure of In.sub.xGa.sub.1-xN, or a multiple quantum well (MQW)
structure with n periods (n.1). Then, a second confining layer 250
having a second electrical property is formed on the active layer
240, wherein the second confining layer 250 is made of such as GaN,
and the second electrical property is opposite to the first
electrical property, for example p-type. Thereafter, a photoresist
layer 260 is coated on the surface of the second confining layer
250, wherein the photoresist layer 260 has a predetermined gap d.
Thereafter, the photoresist layer 260 is used as a mask to etch the
second confining layer 250 and the active layer 240 along the
predetermined gap d until the first confining layer 230 is exposed.
Such as shown in FIG. 2B, after etching, the photoresist layer is
divided into a photoresist layer 260a and a photoresist layer 260b;
the second confining layer is divided into a second confining layer
250a and a second confining layer 250b; the active layer is divided
into an active layer 240a and an active layer 240b; and the first
confining layer is divided into a first confining layer 230a and a
first confining layer 230b. After the photoresist layers 260a and
260b are removed, a light-emitting epitaxial structure 280 and a
protrusive structure 282 are formed, such as shown in FIG. 2C. The
light-emitting epitaxial structure 280 is spaced from the
protrusive structure 282 by the predetermined gap d.
[0018] Thereafter, such as shown in FIG. 2D, a transparent
electrode layer 262a and/or a transparent electrode layer 262b can
be optionally formed on the top surface of the protrusive structure
282 and the top surface of the light-emitting epitaxial structure
280 (i.e. on the second confining layers 250a and 250b). Then, such
as shown in FIG. 2E, a n-type electrode pad 292 is fabricated to
cover the transparent electrode layer 262a and the protrusive
structure 282, wherein the n-type electrode pad 292 is electrically
connected to the first confining layers 230a and 230b. Meanwhile, a
p-type electrode pad 290 is fabricated on the transparent electrode
layer 262b.
[0019] It can be known from FIG. 2E that the epitaxial layers under
the n-type electrode pad 292 form the protrusive structure 282, and
the epitaxial layers under the p-type electrode pad 290 form the
light-emitting epitaxial structure 280, wherein the material layers
forming the protrusive structure 282 are substantially equivalent
to the material layers forming the light-emitting epitaxial
structure 280 with respect to the material species and arrangement
sequence, and additionally, the present embodiment does not perform
an etch step on the top surface of the protrusive structure 282 or
on top surface of the light-emitting epitaxial structure 280.
Therefore, it can be assured that the top surface roughness of the
protrusive structure 282 is very close to that of the
light-emitting epitaxial structure 280, and thus the n-type
electrode pad 292 and the p-type electrode pad 290 with similar
lusters can be made. Hence, the present embodiment has the
advantages of promoting the image recognition rate and accuracy in
the processes of die bonding and wire bonding; increasing the
overall production; decreasing inferior products; and improving the
problem of rough surface textures.
[0020] Further, the protrusive structure also can be composed of a
plurality of protrusive structure units.
[0021] The aforementioned material species and types applied to the
respective material layers are merely used as examples for
explanation, and the present invention is not limited thereto.
[0022] As is understood by a person skilled in the art, the
foregoing preferred embodiments of the present invention are
illustrated of the present invention rather than limiting of the
present invention. It is intended to cover various modifications
and similar arrangements included within the spirit and scope of
the appended claims, the scope of which should be accorded the
broadest interpretation so as to encompass all such modifications
and similar structure.
* * * * *