U.S. patent application number 12/019492 was filed with the patent office on 2008-06-19 for semiconductor package and method for manufacturing the same.
This patent application is currently assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Invention is credited to Yao Ting HUANG.
Application Number | 20080145969 12/019492 |
Document ID | / |
Family ID | 34825390 |
Filed Date | 2008-06-19 |
United States Patent
Application |
20080145969 |
Kind Code |
A1 |
HUANG; Yao Ting |
June 19, 2008 |
SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME
Abstract
A semiconductor package includes a semiconductor chip, a first
substrate layer and a second substrate layer. The semiconductor
chip has an active surface and a plurality of pads disposed on the
active surface. The first substrate layer is formed on the active
surface of the semiconductor chip and has a plurality of first
contacts electrically connected to the pads of the semiconductor
chip. The second substrate layer is substantially smaller than the
first substrate layer, is formed on the first substrate layer, and
has a plurality of second contacts electrically connected to the
first contacts of the first substrate layer.
Inventors: |
HUANG; Yao Ting; (Kaohsiung
City, TW) |
Correspondence
Address: |
LOWE HAUPTMAN HAM & BERNER, LLP
1700 DIAGONAL ROAD, SUITE 300
ALEXANDRIA
VA
22314
US
|
Assignee: |
ADVANCED SEMICONDUCTOR ENGINEERING,
INC.
Kaohsiung
TW
|
Family ID: |
34825390 |
Appl. No.: |
12/019492 |
Filed: |
January 24, 2008 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11049867 |
Feb 4, 2005 |
7335987 |
|
|
12019492 |
|
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Current U.S.
Class: |
438/107 ;
257/E21.5 |
Current CPC
Class: |
H01L 2924/12042
20130101; H01L 2224/48227 20130101; H01L 2224/32225 20130101; H01L
23/3114 20130101; H01L 23/5385 20130101; H01L 2924/14 20130101;
H01L 2924/00014 20130101; H01L 2224/73265 20130101; H01L 25/16
20130101; H01L 2224/32145 20130101; H01L 2224/48091 20130101; H01L
2924/19105 20130101; H01L 2224/73204 20130101; H01L 23/49833
20130101; H01L 25/50 20130101; H01L 24/48 20130101; H01L 2224/16227
20130101; H01L 2924/181 20130101; H01L 2224/48091 20130101; H01L
2924/00014 20130101; H01L 2924/12042 20130101; H01L 2924/00
20130101; H01L 2924/14 20130101; H01L 2924/00 20130101; H01L
2924/181 20130101; H01L 2924/00012 20130101; H01L 2924/00014
20130101; H01L 2224/45099 20130101; H01L 2924/00014 20130101; H01L
2224/45015 20130101; H01L 2924/207 20130101; H01L 2224/73265
20130101; H01L 2224/32225 20130101; H01L 2224/48227 20130101; H01L
2924/00 20130101; H01L 2224/73265 20130101; H01L 2224/32145
20130101; H01L 2224/48227 20130101; H01L 2924/00 20130101; H01L
2224/73204 20130101; H01L 2224/16225 20130101; H01L 2224/32225
20130101; H01L 2924/00 20130101 |
Class at
Publication: |
438/107 ;
257/E21.5 |
International
Class: |
H01L 21/52 20060101
H01L021/52 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 6, 2004 |
TW |
093102846 |
Claims
1.-18. (canceled)
19. A method for manufacturing a semiconductor package, comprising
the steps of: providing a semiconductor wafer comprising a
plurality of first semiconductor chips, wherein each first
semiconductor chip has an active surface and a plurality of pads
disposed on the active surface of the semiconductor wafer; forming
a first substrate layer on the active surface of the first
semiconductor chip, wherein the first substrate layer comprises a
plurality of first contacts electrically connected to the pads, the
first substrate layer has a first surface and a second surface
opposite to the first surface, and the second surface disposed on
the active surface of the first semiconductor chip; forming a
second substrate layer on the first surface of the first substrate
layer, wherein the second substrate layer comprises a plurality of
second contacts electrically connected to the first contacts, the
second substrate layer is smaller than the first substrate layer,
the second substrate layer exposes out a part of the first surface
of the first substrate layer, and the part of the first surface of
the first substrate layer defines a component area: disposing a
component disposed on the component area; and cutting the
semiconductor wafer so as to form the individual semiconductor
package.
20. The method for manufacturing a semiconductor package as claimed
in claim 19, wherein the step of forming the first substrate layer
on the first semiconductor chip comprises the steps of: forming a
first dielectric layer on the active surface of the semiconductor
wafer; forming a plurality of first openings in the first
dielectric layer, such that the pads of the first semiconductor
chip are exposed out of the first dielectric layer; forming a
conductive metal layer on the first dielectric layer and the pads
exposed out of the first openings by means of electroplating or
deposition mode; forming a plurality of conductive traces on the
first dielectric layer and the pads exposed out of the first
openings by selectively etching the conductive metal layer; forming
a second dielectric layer on the first dielectric layer and the
conductive traces; forming a plurality of second openings in the
second dielectric layer, such that parts of the conductive traces
are exposed out of the second dielectric layer; and forming a
plurality of the first contacts on the parts of the conductive
traces exposed out of the second dielectric layer.
21. The method for manufacturing a semiconductor package as claimed
in claim 19, wherein the step of forming a second substrate layer
on the first substrate layer comprises the steps of: forming a
third dielectric layer on the first substrate layer; forming a
plurality of third openings in the third dielectric layer, such
that the first contacts of the first substrate layer are exposed
out of the third dielectric layer; forming a conductive metal layer
on the third dielectric layer and the first contacts exposed out of
the third openings by means of electroplating or deposition mode;
forming a plurality of conductive traces on the third dielectric
layer and the first contacts exposed out of the third openings by
selectively etching the conductive metal layer; forming a fourth
dielectric layer on the third dielectric layer and the conductive
traces; forming a plurality of fourth openings in the fourth
dielectric layer, such that parts of the conductive traces are
exposed out of the fourth dielectric layer; and forming the second
contacts on the parts of the conductive traces exposed out of the
fourth dielectric layer.
22. The method for manufacturing a semiconductor package as claimed
in claim 19, wherein the second substrate layer is annular shape
for defining a cavity on the first substrate layer; and the method
for manufacturing a semiconductor package further comprises the
step of: disposing at least one second semiconductor chip on the
first substrate layer, wherein the second semiconductor chip is
located in the cavity.
23. The method for manufacturing a semiconductor package as claimed
in claim 22, further comprising the step of: disposing at least one
passive component on the first substrate layer and located in the
cavity.
24. The method for manufacturing a semiconductor package as claimed
in claim 19, wherein the second substrate layer has a shoulder
formed on the first substrate layer; and the method for
manufacturing a semiconductor package further comprises the step
of: disposing at least one second semiconductor chip on the
shoulder.
25. The method for manufacturing a semiconductor package as claimed
in claim 24, further comprising the step of: disposing at least one
passive component on the shoulder.
26. The method for manufacturing a semiconductor package as claimed
in claim 19, further comprising the step of: adhering a heat
spreader to the first semiconductor chip.
27. The method for manufacturing a semiconductor package as claimed
in claim 19, further comprising the step of: disposing a plurality
of exterior contacts on the second contacts of the second substrate
layer for electrically connecting to a circuit device.
Description
[0001] The present application is division of U.S. application Ser.
No. 11/049,867, filed Feb. 4, 2005, which is based on, and claims
priority from, Taiwan Application Number 093102846, filed Feb. 6,
2004, the disclosures of which are hereby incorporated by reference
herein in their entirety. The present application is also related
to the concurrently filed application titled "SEMICONDUCTOR PACKAGE
AND METHOD FOR MANUFACTURING THE SAME", Attorney Docket No.
4459-174A.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention generally relates to a semiconductor
package, and more particularly to a wafer level semiconductor
package including substrate layer with higher packaging density of
an integrated circuit.
[0004] 2. Description of the Related Art
[0005] High efficiency, low cost, minimization and higher packaging
density of a semiconductor package are objects that most electronic
companies continuously attempt to achieve. The above-mentioned
semiconductor packages are Multiple Chip Module/Stack/Ball Grid
Array (MCM/Stack/BGA), Cavity Down Ball Grid Array (Cavity Down
BGA), Flip Chip Ball Grid Array (Flip Chip BGA), Flip Chip Pin Grid
Array (Flip Chip PGA) and Ball Grid Array which have active
components and passive components.
[0006] However, the above-mention semiconductor packages generally
include a substrate for supporting a semiconductor chip or for
acting as an intermediate carrier between the semiconductor chip
and a printed circuit board. Furthermore, the passive components
are disposed in an extra space and on an extra area.
[0007] Referring FIG. 1, a conventional Chip Size Package (CSP) 2
includes a semiconductor chip 12 and a substrate layer 20 which is
directly formed on an active surface 14 of the semiconductor chip
12. The substrate layer 20 includes two dielectric layers 15, 16
and a plurality of conductive traces 18. The dielectric layer 15 is
disposed on the active surface 14 of the semiconductor chip 12. The
conductive traces 18 are formed on the dielectric layer 15 and are
electrically connected to a plurality of pads which are disposed on
the active surface 14 of the semiconductor chip 12. The dielectric
layer 16 is disposed on the dielectric layer 15 and the conductive
traces 18, and parts of the conductive traces 18 are exposed out of
the dielectric layer 16 so as to form a plurality of contacts. A
plurality of solder balls 24 or conductive leads are disposed on
the contacts for electrically connecting to an exterior device (not
shown), e.g. a printed circuit board. A solder mask 26 is disposed
on the dielectric layer 16 for surrounding the contacts 24.
However, A much higher semiconductor package packaging density is
still an object, in order to achieve minimization of the entire
semiconductor package. In addition, the conventional Chip Size
Package 2 cannot efficiently solve a problem that the passive
components are disposed in an extra space and on an extra area. In
other words, the semiconductor package must be provided with an
extra space and on an extra area for receiving the passive
components.
[0008] Accordingly, there exists a need for a semiconductor package
capable of having a much higher integrated circuit packaging
density.
SUMMARY OF THE INVENTION
[0009] It is an object of the present invention to provide a
semiconductor package including substrate layers and having a much
higher integrated circuit packaging density so as to achieve a
minimization of the entire semiconductor package.
[0010] In order to achieve the foregoing objects, the present
invention provides a semiconductor package including a
semiconductor chip, a first substrate layer and a second substrate
layer. The semiconductor chip has an active surface and a plurality
of pads disposed on the active surface. The first substrate layer
is formed on the active surface of the semiconductor chip and has a
plurality of first contacts electrically connected to the pads of
the semiconductor chip. The second substrate layer formed on the
first substrate layer is substantially smaller than the first
substrate layer, and has a plurality of second contacts
electrically connected to the first contacts of the first substrate
layer.
[0011] The semiconductor package of the present invention utilizes
the Redistribution Layer (RDL) manufacturing process and the
Build-up manufacturing process to form two substrate layers. The
two substrate layers have different size and further define a
cavity or a shoulder for receiving one or more second semiconductor
chips and passive components. Furthermore, the semiconductor
package according to the present invention can be directly
installed on the printed circuit board without an intermediate
carrier. Furthermore, the semiconductor package according to the
present invention has a much higher packaging density of integrated
circuit so as to achieve a minimization of the entire semiconductor
package.
[0012] The foregoing, as well as additional objects, features and
advantages of the invention will be more readily apparent from the
following detailed description, which proceeds with reference to
the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] FIG. 1 is a sectional schematic view of a chip size package
in the prior art.
[0014] FIG. 2a is a sectional schematic view of a semiconductor
package according to an embodiment of the present invention.
[0015] FIG. 2b is a plane schematic view of a semiconductor package
according to an embodiment of the present invention.
[0016] FIG. 3 is a sectional schematic view of a semiconductor
package according to an embodiment of the present invention and an
exterior device.
[0017] FIGS. 4 to 10 are sectional schematic views of a method for
manufacturing a semiconductor package of the present invention.
[0018] FIG. 11 is a sectional schematic view of a semiconductor
package according to another embodiment of the present
invention.
[0019] FIG. 12 is a sectional schematic view of a semiconductor
package according to a further embodiment of the present
invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0020] Referring to FIGS. 2a and 2b, they depict a semiconductor
package 100 according to an embodiment of the present invention.
The semiconductor package 100 includes a first semiconductor chip
110 which has a plurality of pads 112 disposed on an active surface
114 of the first semiconductor chip 110. A substrate layer 120 is
formed on the active surface 114 of the first semiconductor chip
110. An annular substrate layer 150 is formed on the substrate
layer 120 for defining a cavity 159 on the substrate layer 120.
[0021] The substrate layer 120 and the annular substrate layer 150
respectively include at least one dielectric layer (described in
the following article), a plurality of conductive traces (described
in the following article) and a plurality of contacts 142, 152. The
contacts 142 are electrically connected to the pads 112 through the
conductive traces, and the contacts 152 are electrically connected
to the contacts 142 through the conductive traces.
[0022] At least one second semiconductor chip 160, e.g. two second
semiconductor chips 160a, 160b, are arranged parallel on the
substrate layer 120, and at least one passive component 164, e.g.
two passive components 164a, 164b, are disposed on the substrate
layer 120, and the second semiconductor chip 160 and the passive
component 164 are located in the cavity 159 surrounded by the
annular substrate layer 150. The second semiconductor chip 160 can
be electrically connected to the contacts 142 by means of a flip
chip connection technology, and the passive component 164 is
electrically connected to the contacts 142. A heat spreader 170 or
a heat sink can be adhered to a back surface 116 of the first
semiconductor chip 110. A plurality of exterior contacts, e.g.
conductive leads or solder balls 153, are disposed on the contacts
152 of the annular substrate layer 150 for electrically connecting
to an exterior device 180, e.g. a printed circuit board, such that
the semiconductor package 100 can be installed on the exterior
device 180, shown in FIG. 3.
[0023] The present invention provides a method for manufacturing
the above-mentioned semiconductor package 100 by utilizing a
Redistribution Layer (RDL) manufacturing process and a Build-up
manufacturing process. Referring FIG. 4 to FIG. 9, these figures
depict a method for manufacturing the above-mentioned semiconductor
package 100 according to the present invention.
[0024] Referring to FIG. 4, a semiconductor wafer 102 includes a
plurality of first semiconductor chips 110, and each first
semiconductor chip 110 has a plurality of pads 112 which are
disposed on an active surface 114 of the semiconductor wafer 102. A
dielectric layer 122 is formed on an active surface 114 of the
semiconductor wafer 102.
[0025] Referring to FIG. 5, a plurality of openings 124 are formed
in the dielectric layer 122 by means of light reaction or laser
manufacturing process, such that the pads 112 of the first
semiconductor chip 110 are exposed out of the openings 124 of the
dielectric layer 122. A conductive metal layer 126 is formed on the
dielectric layer 122 and the pads 112 by means of electroplating or
deposition processes. According to an embodiment of the present
invention, a seeded metal layer is formed on the dielectric layer
122 and the pads 112 in advance, and then the thickness of the
seeded metal layer is thickened to a predetermined thickness by
means of electroplating processes, thereby forming the conductive
metal layer 126. The openings 124 preferably have a profile of a
wide upper portion and a narrow lower portion for facilitating to
electroplate the conductive metal layer 126 on the interior of the
openings 124 and the pads 112. According to an embodiment of the
present invention, the conductive metal layer 126 can be fully
electroplated or filled in the openings 124 and on the dielectric
layer 122. Then, a plurality of conductive traces 128 are formed on
the dielectric layer 122 and the pads 112 by selectively etching
the conductive metal layer 126.
[0026] Referring to FIG. 6, another dielectric layer 130 is formed
on the dielectric layer 122 and the conductive traces 128. A
plurality of openings 132 are formed in the dielectric layer 130 by
means of light reaction or laser manufacturing process, such that
parts of the conductive traces 128 are exposed out of the openings
132 of the dielectric layer 130. A conductive metal layer 134 is
formed on the dielectric layer 130 and the parts of the conductive
traces 128 by means of electroplating or deposition mode. Then, a
plurality of conductive traces 136 are formed on the dielectric
layer 130 and the parts of the conductive traces 128 by selectively
etching the conductive metal layer 134.
[0027] Referring to FIG. 7, a dielectric layer 138 is formed on the
dielectric layer 130 and the conductive traces 136. A plurality of
openings 140 are formed in the dielectric layer 138 by means of
light reaction or laser manufacturing process, such that the parts
of the conductive traces 136 are exposed out of the openings 140 of
the dielectric layer 138, thereby forming a plurality of contacts
142.
[0028] Referring to FIG. 8, an annular substrate layer 150, e.g.
rectangle or circular shape, is formed on the substrate layer 120
for defining a cavity 159 on the substrate layer 120. The
manufacturing process of the annular substrate layer 150 is similar
to that of the substrate layer 120. A plurality of contacts 152 are
formed on the annular substrate layer 150 and are electrically
connected to the contacts 142 of the substrate layer 120.
[0029] It is apparent to one of ordinary skill in the art that the
above-mentioned that the substrate layer 120 and the annular
substrate layer 150 are manufactured by means of a build-up
manufacturing process. However, the manufacturing method of the
substrate layer 120 and the annular substrate layer 150 is not
limited to the build-up manufacturing process, i.e. the
manufacturing method can be a lamination manufacturing process as
well.
[0030] Referring to FIG. 9, the annular substrate layer 150 defines
the cavity 159 located on the substrate layer 120. A second
semiconductor chip 160 and a passive component 164 are disposed on
the substrate layer 120 and in the cavity 159 surrounded by the
annular substrate layer 150. The second semiconductor chip 160 can
be electrically connected to the contacts 142 of the substrate
layer 120 through a plurality of bumps 162 and by means of a flip
chip connection technology, and an underfill 163 (such as epoxy) is
disposed between the second semiconductor chip 160 and the
substrate layer 120. It is apparent to one of ordinary skill in the
art that the second semiconductor chip 160 can be electrically
connected to the substrate layer 120 by means of a wire bonding
connection technology and a molding compound is fully filled in the
cavity 159 of the annular substrate layer 150 for encapsulating the
second semiconductor chip 160.
[0031] In addition, in an alternative embodiment, the semiconductor
package 100 further includes a plurality of second semiconductor
chips 160 are stacked or parallel disposed on the substrate layer
120. It is apparent to one of ordinary skill in the art that the
second semiconductor chips 160 can be electrically connected to the
substrate layer 120 by means of a flip chip connection technology
or a wire bonding connection technology. A plurality of solder
balls 153 are formed on the contacts 152 of the annular substrate
layer 150 for electrically connecting to an exterior device (not
shown), e.g. a printed circuit board.
[0032] It is apparent to one of ordinary skill in the art that the
thickness of the annular substrate layer 150 is larger than the
height of the second semiconductor chip 160 and the passive
component 164 so as to avoid the interference between the second
semiconductor chip 160 and the printed circuit board (or the
passive component 164 and the printed circuit board) when the
semiconductor 100 is installed on the printed circuit board, shown
in FIG. 3.
[0033] Referring to FIG. 10, the semiconductor wafer 102 is cut by
means of a cutting device 166 for separating each first
semiconductor chip 110 from one another, thereby forming the
plurality of semiconductor packages 100.
[0034] As shown in FIG. 2a, a heat spreader 170 can be adhered to a
back surface 116 of the first semiconductor chip 110 for
dissipating heat before the semiconductor wafer 102 is cut.
[0035] The method for manufacturing the semiconductor package
according to the present invention utilizes a wafer level
manufacturing process to dispose the second semiconductor chip and
the passive component, and therefore it substantially decreases the
manufacturing time of the semiconductor package.
[0036] Referring to FIG. 11, it depicts a semiconductor package 200
according to another embodiment of the present invention. The
semiconductor package 200 is substantially similar to the
semiconductor package 100, wherein the similar elements are
designated with the similar reference numerals. The semiconductor
package 200 includes a first semiconductor chip 210 which has a
plurality of pads 212 disposed on an active surface 214 of the
first semiconductor chip 210. A substrate layer 220 is formed on
the active surface 214 of the first semiconductor chip 210. An
annular substrate layer 250 is formed on the substrate layer 220.
The substrate layer 220 and the annular substrate layer 250
respectively include at least one dielectric layer (not shown), a
plurality of conductive traces (not shown) and a plurality of
contacts 242, 252. The contacts 242 are connected to the pads 212
through the conductive traces, and the contacts 252 are
electrically connected to the contacts 242 through the conductive
traces. Two second semiconductor chips 260, 261 and a passive
component 264 are disposed on the substrate layer 220, and are
located in a cavity surrounded by the annular substrate layer 250.
The second semiconductor chip 260 can be electrically connected to
the contacts 242 by means of a flip chip connection technology. The
second semiconductor chip 261 is adhered to the second
semiconductor chip 260, and the second semiconductor chip 261 can
be electrically connected to the contacts 242 by means of a wire
bonding connection technology. The passive component 264 is
electrically connected to the contacts 242. The cavity surrounded
by the annular substrate layer 250 is filled with a molding
compound 268 for encapsulating the second semiconductor chip 260,
261 and the passive component 264. A heat spreader 270 or a heat
sink can be adhered to a back surface 216 of the first
semiconductor chip 210. A plurality of exterior contacts, e.g.
conductive leads or solder balls 253, are disposed on the contacts
252 of the annular substrate layer 250 for electrically connecting
to an exterior device (not shown).
[0037] Referring to FIG. 12, it depicts a semiconductor package 300
according to a further embodiment of the present invention. The
semiconductor package 300 is substantially similar to the
semiconductor package 100, wherein the similar elements are
designated with the similar reference numerals. The semiconductor
package 300 includes a first semiconductor chip 310 which has a
plurality of pads 312 disposed on an active surface 314 of the
first semiconductor chip 310. A substrate layer 320 is formed on
the active surface 314 of the first semiconductor chip 310. A
substrate layer 350, e.g. a rectangle shape, is formed on the
substrate layer 320, and the size of the substrate layer 350 is
substantially bigger than the size of the substrate layer 320 for
forming a shoulder 359 on the substrate layer 320. The shoulder 359
can be an annular area. The substrate layers 320, 250 respectively
include at least one dielectric layer (not shown), a plurality of
conductive traces (not shown) and a plurality of contacts 342, 352.
The contacts 342 are connected to the pads 312 through the
conductive traces, and the contacts 352 are electrically connected
to the contacts 342 through the conductive traces. A second
semiconductor chip 360 and a passive component 364 are disposed on
the shoulder 359. The second semiconductor chip 360 can be
electrically connected to the contacts 342 by means of a flip chip
connection technology, and the passive component 364 is
electrically connected to the contacts 342. A heat spreader 370 or
a heat sink can be adhered to a back surface 316 of the first
semiconductor chip 310. A plurality of exterior contacts, e.g.
conductive leads or solder balls 353, are disposed on the contacts
352 of the substrate layer 350 for electrically connecting to an
exterior device (not shown).
[0038] A method for manufacturing the semiconductor package of the
present invention utilizes the Redistribution Layer (RDL)
manufacturing process and the Build-up manufacturing process to
form two substrate layers. The two substrate layers have different
size and further define a cavity or a shoulder for receiving one or
more second semiconductor chips and passive components.
Furthermore, the semiconductor package according to the present
invention can be directly installed on the printed circuit board
without an intermediate carrier. Furthermore, the semiconductor
package according to the present invention has a much higher
integrated circuit packaging density so as to achieve an object of
the minimization of the entire semiconductor package. It is
apparent to one of ordinary skill in the art that the semiconductor
package according to the present invention can be applied in the
filed of Plastic Ball Grid Array (PBGA), Heat Slug Ball Grid Array
(HSBGA), Cavity Down Ball Grid Array, Chip Size Package Ball Grid
Array (CSP BGA), Thin Fine Pitch Ball Grid Array (TFBGA), Low Fine
Pitch Ball Grid Array (LFBGA) and Very Fine Pitch Ball Grid Array
(VFBGA).
[0039] Although the invention has been explained in relation to its
preferred embodiment, it is not used to limit the invention. It is
to be understood that many other possible modifications and
variations can be made by those skilled in the art without
departing from the spirit and scope of the invention as hereinafter
claimed.
* * * * *