U.S. patent application number 11/976499 was filed with the patent office on 2008-03-13 for method of processing a substrate, heating apparatus, and method of forming a pattern.
This patent application is currently assigned to Kabushiki Kaisha Toshiba. Invention is credited to Shinichi Ito, Kenji Kawano, Eishi Shiobara.
Application Number | 20080064226 11/976499 |
Document ID | / |
Family ID | 32288668 |
Filed Date | 2008-03-13 |
United States Patent
Application |
20080064226 |
Kind Code |
A1 |
Kawano; Kenji ; et
al. |
March 13, 2008 |
Method of processing a substrate, heating apparatus, and method of
forming a pattern
Abstract
A method of processing a substrate, comprising forming a
chemically amplified resist film on a substrate, irradiating energy
beams to the chemically amplified resist film to form a latent
image therein, carrying out heat treatment with respect to the
chemically amplified resist film, heating treatment being carried
out in a manner of relatively moving a heating section for heating
the chemically amplified resist film and the substrate forming a
gas stream flowing reverse to the relatively moving direction of
the heating section between the lower surface of the heating
section and the chemically amplified resist film.
Inventors: |
Kawano; Kenji;
(Yokohama-shi, JP) ; Ito; Shinichi; (Yokohama-shi,
JP) ; Shiobara; Eishi; (Yokohama-shi, JP) |
Correspondence
Address: |
FINNEGAN, HENDERSON, FARABOW, GARRETT & DUNNER;LLP
901 NEW YORK AVENUE, NW
WASHINGTON
DC
20001-4413
US
|
Assignee: |
Kabushiki Kaisha Toshiba
|
Family ID: |
32288668 |
Appl. No.: |
11/976499 |
Filed: |
October 25, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11029375 |
Jan 6, 2005 |
7294586 |
|
|
11976499 |
Oct 25, 2007 |
|
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|
10682419 |
Oct 10, 2003 |
7009148 |
|
|
11029375 |
Jan 6, 2005 |
|
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Current U.S.
Class: |
438/781 ;
257/E21.026 |
Current CPC
Class: |
H01L 21/67109 20130101;
G03F 7/0392 20130101; H01L 21/0273 20130101; G03F 7/0042 20130101;
H01L 21/67115 20130101; G03F 7/38 20130101 |
Class at
Publication: |
438/781 ;
257/E21.026 |
International
Class: |
H01L 21/31 20060101
H01L021/31 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 11, 2002 |
JP |
2002-299576 |
Claims
1.-8. (canceled)
9. A method of processing a substrate, comprising: forming a
chemically amplified resist film on a substrate; irradiating energy
beams to the chemically amplified resist film to form a latent
image therein; moving a heating section relatively to the
chemically amplified resist film in order to carry out heating with
respect to the chemically amplified resist film forming the latent
image; and, forming a liquid stream between the heating section and
the chemically amplified resist film in the movement of the heating
section.
10. The method according to claim 9, wherein the range heated by
the heating section has a slit shape.
11. The method according to claim 9, wherein the heating section
cools the chemically amplified resist film except the range
heated.
12. The method according to claim 11, wherein the substrate is
placed on a stage, and said cooling is carried out to control the
temperature of the stage.
13. The method according to claim 11, wherein said cooling is
carried out in a manner of forming the liquid stream on the
chemically amplified resist film around the heating range.
14. The method according to claim 9, wherein water is used as the
liquid.
15. The method according to claim 9, wherein at least one of moving
speed of the heating section to the substrate, heating temperature
by the heating section, temperature of the gas stream, and gas
stream speed is controlled to uniformly the heat treatment in the
substrate surface.
16. The method according to claim 9, wherein at least one of moving
speed of the heating section to the substrate, heating temperature
by the heating section, temperature of the gas stream, gas stream
speed and substrate temperature is controlled to uniformly the heat
treatment in the substrate surface
17. The method according to claim 9, wherein the energy beams is
any of ultraviolet radiation, deep-ultraviolet radiation, vacuum
ultraviolet radiation, electron beam and X rays.
18. The method according to claim 9, wherein developer is supplied
onto the chemically amplified resist film in a state that the
liquid exists thereon.
19.-39. (canceled)
40. A method of forming a pattern, comprising: forming a photo
resist film on a substrate; forming liquid film on the photo resist
film surface; irradiating energy beams to the photo resist film via
the liquid film to form a latent image in the photo resist film;
and developing the photo resist film formed with the latent image,
wherein the surface of the photo resist film being not dried until
developing is carried out after the liquid film is formed.
41. The method according to claim 40, further comprising: heating
the photo resist film at the temperature holding the liquid film on
the substrate between the forming the latent image and the forming
liquid film. an electric field being applied to the photo resist
film in the heating.
42. The method according to claim 41, wherein the photo resist film
is heated by heating the backside of the substrate, and the
electric field application is voltage application to an electrode
located on an upper portion of the photo resist film.
43. The method according to claim 41, wherein the electric field
applied to the photo resist film is alternating current.
44. The method according to claim 40, wherein the wavelength of the
energy beams is generally longer than 193 nm.
45. The method according to claim 40, wherein the wavelength of the
energy beams is generally 157 nm, and the liquid film consists of
fluorine oil.
46. The method according to claim 40, wherein the development is
carried out in a manner of supplying developer to the photo resist
film while relatively moving a developer supply section, which
sucks the supplied developer, to the photo resist film.
47. A method of forming a pattern, comprising: forming a chemically
amplified resist film on a substrate; forming liquid film on the
chemically amplified resist film surface; irradiating energy beams
to the chemically amplified resist film via the liquid film to form
a latent image therein; heating the chemically amplified resist
film formed with the latent image, and developing the chemically
amplified resist film heated, the surface of the photo resist film
being not dried until developing is carried out after the liquid
film is formed.
48. The method according to claim 47, wherein the wavelength of the
energy beams is generally longer than 193 nm.
49. The method according to claim 47, wherein the wavelength of the
energy beams is generally 157 nm, and the liquid film consists of
fluorine oil.
50. The method according to claim 47, wherein the heating section
heating part of the resist films is moved relatively to the
substrate in the heating; and forming a liquid stream between under
surface of the heating section and upper surface of the chemically
amplified resist film in the moving.
51.-52. (canceled)
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from the prior Japanese Patent Application No.
2002-299576, filed Oct. 11, 2002, the entire contents of which are
incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to method and apparatus for
carrying out heat treatment with respect to a substrate, and to a
method of forming a photo resist film or chemically amplified
resist film pattern on a substrate.
[0004] 2. Description of the Related Art
[0005] In the process of manufacturing semiconductor devices,
resist pattern is used to form element regions and to process
electrode interconnects. The resist pattern is formed in the
following manner in general. A resist coating film is formed on
semiconductor wafer, and thereafter, heat treatment calling
pre-bake is carried out. The pre-bake is carried out to volatilize
solvent contained in the resist. Predetermined pattern is
transferred to the resist film by exposure.
[0006] With micro-fabrication of semiconductor elements, high
resolution is required in the lithography process. In order to meet
the requirement, the wavelength of used exposure light is
shortened. In photolithography, KrF excimer laser (wavelength: 248
nm) has been widely used as an exposure light source.
[0007] On the other hand, as the wavelength of exposure light is
shortened, photo resist calling chemically amplified resist has
been proposed and practically used as the photo resist material to
which pattern is transferred. The chemically amplified resist
contains acid generating agent generating acid by exposure. The
acid generated by exposure decomposes resin (positive-tone resist),
and cross-links it (negative-tone resist). This serves to make use
of the property such that solubility to developer changes in the
development process after that.
[0008] The chemically amplified resist has property excellent in
resolution while it is very delicate with respect to environment.
More specifically, the chemically amplified resist reacts with
basic substances in atmosphere; for this reason, acid is
inactivated. This is a factor of causing degradation in pattern
shape and resolution. In order to prevent the degradation,
environmental control is carried out. In general, the environmental
control is carried out in a manner of providing chemical filters in
an aligner (exposure system) and in a coater developer for making
resist coating and developing processes.
[0009] Most of the chemically amplified resists require heat
treatment process calling PEB (Post Exposure Bake) after exposure
process. The PEB is carried out in order to diffuse acid generated
in the exposure process. The PEB process is carried out, and
thereafter, the chemically amplified resist is developed so that
resist pattern can be formed.
[0010] In the PEB process, there has been known that acid is
evaporated in addition to the foregoing acid inactivation. Some
methods have been conventionally proposed as the method of
preventing the acid evaporation of the chemically amplified resist
in the PEB process. For example, one is the method of setting
pre-bake temperature used for volatilizing solvent after resist
coating higher than usual, and setting PEB temperature lower than
usual, and thereby, reducing acid evaporation. (See Effect of acid
evaporation in chemically amplified resists on insoluble layer
formation, Journal of photopolymer science and technology Vol. 8,
Number 4 (1995) p. 561-570). Another is the method of carrying out
the PEB process under the pressure higher than usual, and thereby,
reducing acid evaporation (See JPN. PAT. APPLN. KOKAI No.
11-38644).
[0011] The pre-bake temperature and the PEB temperature are
changed, and thereby, the acid evaporation in the PEB process can
be reduced. However, pre-bake and PEB processes are carried out
under conditions largely diverging from the optimized temperature
condition (normal condition). For this reason, it is difficult to
sufficiently show performances such as exposure and focus margin
the resists possess naturally.
[0012] In the PEB process, a heating apparatus, which can solve the
following problem, is required. Namely, gas and fine grain
generated in heating adhere into a chamber; therefore, this is a
source of the generation of particle. For this reason, it is
general that purge air stream is formed in the chamber of the
heating section. However, acid evaporated in PEB is carried to the
downstream side by the purge air stream, and adsorbs to the surface
of resist film. Therefore, acid concentration on resist surface
differs in chips situated on the most upperstream to the air stream
and chips situated on the downstream side. As a result,
non-uniformity occurs in resist dimension in the wafer surface
after development.
[0013] If pressure is set higher in the PEB process, acid
evaporation is reduced; however, suitable course is not taken to
the problem that the adsorption of the evaporated acid. The
evaporated acid adsorbs to semiconductor wafer: for this reason, it
is difficult to prevent the occurrence of non-uniformity of resist
dimension in the wafer surface after development.
BRIEF SUMMARY OF THE INVENTION
[0014] According to one aspect of the present invention, there is
provided a method of processing a substrate, comprising:
[0015] forming a chemically amplified resist film on a
substrate;
[0016] irradiating energy beam to the chemically amplified resist
film so that a latent image can be formed therein; and
[0017] carrying out heat treatment with respect to the chemically
amplified resist film,
[0018] heating (heat treatment) being carried out in a manner of
relatively moving a heating section for heating the chemically
amplified resist film and the substrate while forming a air stream
flowing reverse to the relatively moving direction of the heating
section between the lower surface of the heating section and the
chemically amplified resist film.
[0019] According to one aspect of the present invention, there is
provided a method of processing a substrate, comprising:
[0020] forming a chemically amplified resist film on a
substrate;
[0021] irradiating energy beam to the chemically amplified resist
film so that a latent image can be formed therein; and
[0022] carrying out heat treatment with respect to the chemically
amplified resist film,
[0023] heating (heat treatment) being carried out in a manner of
relatively moving a heating section for heating the chemically
amplified resist film and the substrate while forming a liquid
stream flowing reverse to the relatively moving direction of the
heating section between the lower surface of the heating section
and the chemically amplified resist film.
[0024] According to one aspect of the present invention, there is
provided a method of processing a substrate, comprising:
[0025] forming a liquid film containing solvent and solid content
on a substrate; and
[0026] volatilizing the solvent contained in the liquid film to
forming a solid film consisting of the solid content,
[0027] heating (heat treatment) being carried out in a manner of
relatively moving a heating section for heating the liquid film and
the substrate while forming an air stream between a heating range
and the heating section.
[0028] According to one aspect of the present invention, there is
provided a heating apparatus comprising:
[0029] holding means for holding a substrate;
[0030] a heating section arranged in a state of facing the surface
of the substrate held by the holding means, and selectively heating
a partial range of the substrate;
[0031] moving means for relatively moving the heating section and
the substrate in parallel to the main surface of the substrate;
[0032] stream forming means for forming air or liquid stream
between the heating section and the substrate;
[0033] processing condition determining means for determining
processing conditions of a heating range heated by the heating
section; and
[0034] control means for uniformly heating the substrate surface
based on determination by the processing condition determining
means.
[0035] According to one aspect of the present invention, there is
provided a method of forming a pattern, comprising:
[0036] forming a photo resist film on a substrate;
[0037] forming liquid film on the photo resist film surface;
[0038] irradiating energy beams to the photo resist film via the
liquid film so that a latent image can be formed; and
[0039] developing the photo resist film formed with the latent
image,
[0040] the surface of the photo resist film being not dried until
developing is carried out after the liquid film is formed.
[0041] According to one aspect of the present invention, there is
provided a method of forming a pattern, comprising:
[0042] forming a chemically amplified resist film on a
substrate;
[0043] forming liquid film on the chemically amplified resist film
surface;
[0044] irradiating energy beams to the chemically amplified resist
film via the liquid film so that a latent image can be formed;
[0045] carrying out a post exposure bake process with respect to
the chemically amplified resist film formed with the latent image,
and
[0046] developing the chemically amplified resist film subjected to
the post exposure bake process,
[0047] the surface of the photo resist film being not dried until
developing is carried out after the liquid film is formed.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
[0048] FIG. 1 is a flowchart to explain a substrate processing
method according to a first embodiment of the present
invention;
[0049] FIG. 2A to FIG. 2D are cross-sectional views showing the
process of manufacturing a semiconductor device according to the
first embodiment;
[0050] FIG. 3A is a plan view showing the entity of wafer;
[0051] FIG. 3B is a plan view schematically showing a pattern
formed in each chip region of the wafer;
[0052] FIG. 3C is a plan view schematically showing a line pattern
of the chip region;
[0053] FIG. 4 is a cross-sectional view schematically showing the
structure of a heating apparatus according to the first
embodiment;
[0054] FIG. 5 is a perspective view schematically showing the
structure of a heating apparatus according to the first
embodiment;
[0055] FIG. 6 is a plan view to explain heat treatment according to
the first embodiment;
[0056] FIG. 7 is a characteristic diagram showing amount of heat to
wafer position;
[0057] FIG. 8A and FIG. 8B are characteristic diagrams showing scan
speed and process temperature to wafer position, respectively;
[0058] FIG. 9 is a schematic view showing a heating apparatus
according to a second embodiment of the present invention;
[0059] FIG. 10 is a flowchart to explain a substrate processing
method according to a third embodiment of the present
invention;
[0060] FIG. 11 is a plan view schematically showing exposure shot
position transferred onto wafer;
[0061] FIG. 12 is a schematic view to explain a PEB process by a
heating apparatus according to the third embodiment;
[0062] FIG. 13 is a schematic view to explain a PEB process by a
heating apparatus according to the third embodiment;
[0063] FIG. 14 is a schematic view to explain a PEB process by a
heating apparatus according to a fourth embodiment;
[0064] FIG. 15 is a view schematically showing the structure of a
processing apparatus according to a fifth embodiment;
[0065] FIG. 16 is a view showing the structure of a PEB head
according to the fifth embodiment;
[0066] FIG. 17A and FIG. 17B are plan views to explain the
treatment using the processing apparatus according to the fifth
embodiment;
[0067] FIG. 18 is a perspective view schematically showing the
structure of a heating apparatus according to a sixth
embodiment;
[0068] FIG. 19 is a flowchart to explain the method of forming
resist film according to a seventh embodiment;
[0069] FIG. 20A to FIG. 20D are cross-sectional views showing the
process of manufacturing a semiconductor device according to the
seventh embodiment; and
[0070] FIG. 21 is a view schematically showing the structure of the
heating apparatus according to the seventh embodiment.
DETAILED DESCRIPTION OF THE INVENTION
[0071] Embodiments of the present invention will be described below
with reference to the accompanying drawings.
First Embodiment
[0072] FIG. 1 is a flowchart to explain a substrate processing
method according to a first embodiment of the present invention.
FIG. 2A to FIG. 2D are cross-sectional views showing the process of
manufacturing a semiconductor device according to the first
embodiment of the present invention. The first embodiment will be
described with reference to FIG. 1 and FIG. 2A to FIG. 2D.
[0073] (Step S101)
[0074] As shown in FIG. 2A, an anti-reflection film 102 having a
thickness of 60 nm is formed on a semiconductor substrate
(hereinafter, referred to as wafer) 101 having a diameter of 200
mm. The anti-reflection film 102 is formed in a manner of carrying
out bake process at 190.degree. C. for 60 seconds after forming a
liquid film containing anti-reflection agent and solvent by spin
coating.
[0075] (Step S102)
[0076] As illustrated in FIG. 2B, the wafer 101 is coated with
chemically amplified resist solution in which positive-tone
chemically amplified resist material is added to solvent, and
thereby, liquid film 103 is formed. The chemically amplified resist
solution used in the embodiment consists of mixed solvent of lactic
acid ethyl and 3-ethoxy propionic acid ethyl using phenol resin as
base polymer.
[0077] (Step S103)
[0078] As depicted in FIG. 2C, pre-bake process is carried out, and
thereby, solvent contained in the liquid film 103 is volatilized so
that a positive-tone chemically amplified resist film 104 can be
formed. The pre-bake process is carried out under the following
condition, that is, at the temperature of 130.degree. C. for 60
seconds.
[0079] (Step S104)
[0080] After pre-bake, the wafer 101 is cooled down by room
temperature, and thereafter, carried to an aligner (exposure
system) using a KrF excimer laser (wavelength: 248 nm) as a light
source. Reduction projection exposure is carried out via an
exposure mask. As seen from FIG. 3A, reticle pattern is transferred
to each of preset chip regions 110 having 11.times.13 in lengthwise
and crosswise, and thereby, latent image is formed in the
chemically amplified resist film 104. FIG. 3B schematically shows
pattern transferred to each chip region 110. One exposure region
(hereinafter, referred to as exposure shot) is composed of a
left-half line pattern area 111 and an area 112 where no resist is
left after development. FIG. 3C is an enlarged view of the line
pattern 111. Line/space pattern (line 121 having a width of 150 nm
and space 122 having a width of 150 nm) is repeatedly arranged with
the pitch of 300 nm.
[0081] Any of ultraviolet radiation, deep-ultraviolet radiation,
vacuum ultraviolet radiation, electron beam and X rays may be used
as the exposure wavelength.
[0082] (Step S105)
[0083] The wafer is carried to the heating apparatus, and
thereafter, subjected to post exposure bake (PEB) process. The
structure of the heating apparatus carrying out the PEB process
will be described with reference to FIG. 4 and FIG. 5. FIG. 4 and
FIG. 5 are view schematically showing the structure of the heating
apparatus according to the first embodiment of the present
invention. FIG. 4 is a cross-sectional view showing the structure
of the heating apparatus. FIG. 5 is a perspective view
schematically showing the structure of the heating apparatus.
[0084] As seen from FIG. 4 and FIG. 5, the wafer 101 is placed on a
temperature control plate 202 on a base 201. A cover 203 is located
to cover the wafer 101. It is preferable that atmospheric control
is made in a space 204 covered with the cover 203 and the
temperature control plate 202.
[0085] Light from a halogen lamp light source 211 is introduced to
several heating heads 213 via several optical fibers 212. The
heating head 213 is provided above the wafer 101. The light from
the halogen lamp light source 211 is selectively irradiated to the
wafer 101 via an objective lens included in the heating head 213.
In the apparatus, the selectively irradiated light has a slit-like
irradiation range having a length of 220 mm and a width of 5
mm.
[0086] The heating head 213 is supported by a moving mechanism 214.
The heating head 213 is movable to one direction by moving the
moving mechanism 214. The heating head 213 moves from one end of
the wafer 101 to the other end thereof, and thereby, desired heat
treatment is carried out with respect to the wafer 101.
[0087] The cover 203 is connected with an air blower 221 and an air
sucker 222. The line connecting the air blower 221 and the air
sucker 222 and the moving direction of the heating head 213 are
approximately parallel with each other. Air stream 223 introduced
into the space 204 from the air blower 221 is supplied to the
direction reverse to the moving direction of the heating head 213.
The air stream flows between the heating head 213 and the wafer
101, and thereafter, sucked by the air sucker 222.
[0088] The apparatus is provided with a controller 231 for
controlling halogen lamp light source 211, moving mechanism 214,
air blower 221 and air sucker 222.
[0089] The following is a description on the case of carrying out
PEB process of chemically amplified resists film using the
apparatus having the structure described above.
[0090] The wafer 101 is placed on the temperature-controlled plate
202, and thereafter, the cover 203 is set. Thereafter, the heating
head 213 is moved, and the irradiation range 240 is moved from the
left side to the right side on the paper, as shown in FIG. 6. In
this case, the air blower 221 and the air sucker 222 are operated
so that the air stream 223 flowing from the right to the left side.
In this case, the temperature-controlled plate 202 is controlled to
the temperature of 23.degree. C., and only light irradiation range
by the heating head 213 is heated.
[0091] Acid generated in the resist film by exposure is evaporates
by heat treatment by light irradiation, and thereafter, is carried
to the downstream side by the air stream. For this reason, the
evaporated acid adsorbs to the resist film surface. However, the
region where acid adsorbs adheres is a region already heated, and
the region is controlled to low temperature. Thus, it is possible
to greatly prevent reaction of the adsorbed acid with resist
film.
[0092] In view of resist dimension uniformity in the wafer after
being developed, uniform calorie must be given to the wafer in the
PEB process. As seen from FIG. 6, the ratio occupied by wafer edge
to irradiated area is larger than the wafer central portion in the
edge of the wafer 101; therefore, heat is easily released. If
irradiation heating is carried out at the same scan speed, the
calorie become small at the wafer edge portion, as seen from FIG.
7. As a result, resist dimension uniformity is not obtained. In
order to make uniform the amount of heat on the wafer surface, the
scan speed is reduced at the wafer edge portion (see FIG. 8A) while
process temperature is made high at there (see FIG. 8B). By doing
so, resist dimension uniformity is obtained. The following methods
are given to control the process temperature. One is the method of
controlling the luminance of the light source, and another is the
method of controlling the flow speed of the air stream.
[0093] Incidentally, the heating section is not limited to the
structure of irradiating light from the light source. For example,
the apparatus is provided with a heating section (including light
source), and heat generated from the heating section may be
conducted to resist film. In addition, any of lamp, light emitting
diode and laser is used as the light source, and thereby, the
resist film may be heated by light radiation.
[0094] (Step S106)
[0095] The wafer is cooled down by room temperature.
[0096] The wafer is carried to a development unit, and thereafter,
subjected to alkali development process for 60 seconds. After the
development process, rinse and spin dry processes are carried out,
and thereby, resist pattern is formed as shown in FIG. 2D.
[0097] The following is descriptions of the comparative result of
resist pattern dimension surface distribution in the case where PEB
process is carried out using the heating apparatus of the first
embodiment and the conventional heating apparatus.
[0098] A heating apparatus forming one-direction air stream will be
described as one example of the conventional heating apparatus. In
the apparatus, wafer is heated so that the surface temperature
distribution becomes uniform in a state that there exists air
stream flowing to one direction, and thereafter, PEB process is
carried out.
[0099] Resist pattern is formed using the heating apparatus. The
process of forming transferred resist pattern and resist pattern is
the same as described above; therefore, the explanation is
omitted.
[0100] PEB process and development are carried out using the
conventional heating apparatus. Thereafter, the resist pattern is
observed from top using SEM (Scanning Electron Microscope), and
each exposure shot is inspected. As a result, exposure chip
situated on the most upstream side to air stream in heating is
defective. Incidentally, chips having unresolved resist pattern is
determined as being defective.
[0101] Likewise, pattern transfer is carried out using the heating
apparatus of the embodiment, and evaluation is made. As a result,
no defective exposure chip is observed on the wafer surface, and
preferable pattern transfer is obtained.
[0102] The heat treatment described above is carried out, and
thereby, it is possible to greatly restrict thermal reactions of
adsorbed acid. Therefore, exposure is effectively applied without
being changed by the adsorbed acid, so that resist dimension
uniformity can be improved.
[0103] According to the first embodiment, the pattern shown in FIG.
3C is used as evaluation because the evaluation is briefly made.
The present invention is not limited to the pattern; in this case,
other arrangement patterns can obtain the same effect.
[0104] In the embodiment, light of the light source outside the
heating apparatus is introduced using several optical fibers. The
present invention is not limited to the arrangement; in this case,
a lamp may be located in the heating apparatus to directly
irradiate the light to the wafer.
[0105] In the embodiment, the halogen lamp is used as the light
source. The present invention is not limited to the halogen lamp;
in this case, wafer may be heated using lamps having a wavelength
range where resist is not exposed.
[0106] In the embodiment, wafer is heated by lamp irradiation. The
present invention is not limited to heating by lamp irradiation; in
this case, a heating section is used as a heat source, and wafer
may be heated using heat conduction.
[0107] In the embodiment, the irradiated light has the slit-like
irradiation range having the length of 220 mm and the width of 5
mm. The present invention is not limited to the irradiation range;
in this case, the slit-irradiation range includes thin and long
various shapes such as rectangle and ellipse.
[0108] In the embodiment, the heating head used as the heating
source is scanned, and thereby, selective heating area is moved in
the wafer. In this case, even if the stage holding wafer is moved
in a state of fixing the heating head, the same effect can be
obtained.
[0109] In the embodiment, the stage temperature is set to
23.degree. C. The present invention is not limited to the
temperature; in this case, any other temperatures may be set so
long as it is less than temperature where effective exposure dose
is not changed by thermal reaction of adsorbed acid.
[0110] Various modifications may be made in the invention without
diverging from the spirit and scope described in the
embodiment.
Second Embodiment
[0111] A heating apparatus different from the first embodiment will
be described below.
[0112] FIG. 9 is a cross-section view schematically showing a
heating apparatus according to the second embodiment of the present
invention. The entire structure of apparatus is the same as the
first embodiment; therefore, the explanation is omitted.
[0113] A head 250 includes a heating section 251, an air blower 252
and an air sucker 253. The heating section 251 irradiates light 255
supplied from one halogen lamp light source (not shown) via optical
fiber (not shown) to a chemically amplified resist film 104. The
air blower 252 is arranged on the forward side of the moving
direction of the head 250; on the other hand, the air sucker 253 is
arranged on the backward side of the moving direction thereof.
[0114] Gas is introduced from the air blower 252 onto the wafer
101, and sucked by the air sucker 253, and thereby, air stream 254
is formed. The air stream 254 flows from the forward side of the
moving direction of the head to the backward side thereof. The
wafer 101 is placed on a stage (not shown) controlled to the
temperature of 23.degree. C. By doing so, the area where the light
255 is irradiated is selectively heated.
[0115] Heating by the irradiation of the light 255 evaporates acid
generated in exposure, and the evaporated acid is carried to the
downstream side by the air stream 254. The air sucker 253 is
located adjacent to the heating section 251; therefore, the acid
adsorbed to the surface of the resist film 104 is reduced. Even if
acid adsorbs to the surface of the resist film 104, the area to
which acid adsorbs is controlled to low temperature; therefore,
there is almost no influence given to the area.
[0116] The anti-reflection film and resist film are formed in the
same manner as the first embodiment, and thereafter, pre-bake (bake
before exposure) and exposure are carried out. Thereafter, PEB
process is carried out using the apparatus shown in FIG. 9. The
wafer is cooled down, and thereafter, development, rinse and dry
processes are carried out in the same manner as the first
embodiment. By doing so, resist pattern comprising a 110 nm line
and space pattern is formed.
[0117] The formed line dimension is measured in the wafer surface.
As a result, the surface dimension variation of the 110 nm line and
space pattern is greatly reduced as compared with the conventional
case. More specifically, the dimension variation is 4.1 nm; on the
contrary, it is 9.5 nm (3.sigma.) in the case of carrying out
heating process using the conventional heating apparatus.
[0118] The second embodiment has explained about the 110 nm line
and space pattern. The present invention is not limited to the
pattern described above; in this case, the same effect is obtained
even if other patterns are formed.
[0119] According to the second embodiment, one heating head is
used; however, the present invention is not limited to one heating
head. Several heating heads and air stream forming mechanism are
used, and thereby, process time can be greatly reduced.
[0120] The second embodiment has explained about the case applied
to the process of heat treatment after exposure (PEB). The
embodiment may be applied to other process, for example, heat
treatment process after coating film formation.
Third Embodiment
[0121] FIG. 10 is a flowchart to explain a substrate processing
method according to a third embodiment of the present
invention.
[0122] (Step S201)
[0123] The anti-reflection film and the chemically amplified resist
film are formed on the semiconductor substrate in the same manner
as the first embodiment.
[0124] (Step S202)
[0125] After pre-bake, wafer is cooled down by room temperature,
and thereafter, carried to an immersion type aligner (exposure
system) using a KrF excimer laser (wavelength: 248 nm) as a light
source. Reduction projection exposure is carried out via an
exposure mask in a state that the wafer is immersed in pure water.
The following evaluation pattern is used. According to the pattern,
pattern having line dimension of 130 nm and space dimension of 130
nm is repeatedly arranged in one exposure shot with a pitch of 260
nm. As shown in FIG. 11, the exposure shot 110 is transferred onto
the wafer 101 with the arrangement of 5.times.7 in lengthwise and
crosswise, and latent image is formed in positive-tone chemically
amplified resist.
[0126] If the wavelength of the light source is generally longer
than 193 nm, it is preferable to use pure water as the liquid film.
If the wavelength of the light source is generally 157 nm, it is
preferable to use fluorine oil as the liquid film.
[0127] (Step S203)
[0128] The latent image is formed using the immersion type aligner
(exposure system), and thereafter, the wafer is carried out of
there in a state that pure water liquid film is formed on the
resist film surface. The wafer is carried to the heating apparatus
in a state that pure water liquid film is formed on the resist film
surface, and thereafter, post exposure bake (PEB) process is
carried out. The PEB process is carried out in a state that pure
water liquid film is formed on the resist film surface.
[0129] The PEB process is carried out to diffuse acid generated by
exposure. In the semiconductor lithography process, it is general
that the wafer is heated in a state of being placed on a
temperature-controlled hot plate. Usually, PEB process is carried
out at the temperature of 90.degree. C. or more. According to the
third embodiment, the following process is employed in order to
realize PEB process in a state that pure water liquid film is
formed on the resist film surface. More specifically, the wafer is
kept at temperature preventing pure water from evaporating, and
voltage is applied to diffuse acid. In this case, the reason why
voltage is applied in a state of being heated is because of
performing effective diffusion.
[0130] The details will be descried below referring to the
accompanying drawings. FIG. 12 and FIG. 13 schematically show the
PEB process by the heating apparatus according to the third
embodiment of the present invention.
[0131] As illustrated in FIG. 12, the wafer 101 is placed on a
temperature-controlled plate 321. The anti-reflection film 102 and
the chemically amplified resist film 104 are formed on the wafer
101. The surface of the resist film 104 is formed with liquid film
of pure water 301. During process, pure water is always kept in a
state of flowing on the resist film 104. The wafer (substrate) 101
is connected to ground (earth). The pure water may flow to any
directions. However, the flowing direction of the pure water is
preferably reverse to the moving direction of the wafer.
[0132] The structure of a voltage applying head 310 arranged above
the wafer 101 will be described below. An electrode 312 coated with
insulator 313 is arranged on the position near to the upper portion
of the resist film. The electrode 312 is connected to a power
source 331 via electric wire 311. Power is supplied from the power
source 331, and thereby, electric field 316 is applied to the
resist film 105 between the wafer 101 and the electrode 312. In the
third embodiment, the electrode 312 is formed into a slit-like
(rectangle) shape having a length of 220 mm and a width of 5
mm.
[0133] As seen from FIG. 13, the voltage applying head 310 is
movable to one direction on the wafer by a moving mechanism 341.
The moving mechanism 341 can control the distance between the lower
surface of the voltage applying head 310 and the surface of the
resist film 104. The voltage applying head 310 includes a distance
sensor 314. The moving mechanism 341 keeps the distance described
above at constant in accordance with the measured result by the
distance sensor 314 while moving the voltage applying head 310 so
that the wafer 101 can be scanned from one end to the other
end.
[0134] In order to effectively diffuse acid of the resist film 105
to the film thickness direction by the electric field 316, the
temperature-controlled plate 321 located on the backside of the
wafer 101 heats the wafer 101. In this case, the wafer 101 is
arranged separating from the temperature-controlled plate 321 with
the distance 0.1 mm.
[0135] A temperature sensor 315 included in the voltage applying
head 310 monitors the temperature of the resist after being
processed. The flow speed of the pure water 301 flowing on the
resist film 104 is controlled so that the measurement temperature
by the temperature sensor 315 becomes constant. Flowing water
forming means (not shown) controls the flow speed of the pure water
301.
[0136] In the embodiment, the resist process is carried out under
the conditions that application voltage is +2 kV, the distance
between resist film surface and the electrode 312 is 100 .mu.m, and
heating temperature is 70.degree. C.
[0137] (Step S204)
[0138] Uniform PEB process is carried out in the wafer surface
using the heating apparatus, and thereafter, the wafer is carried
out of the apparatus in a state that pure water liquid film is
formed on the resist film surface. The wafer is carried to a
developer in a state that pure water liquid film is formed on the
resist film surface, and developed using alkali developer.
[0139] In this case, pure water existing on the resist film surface
must be effectively substituted for the alkali developer. Here, a
developer disclosed in U.S. Pat. No. 6,550,990 may be used as the
developer.
[0140] After development is completed, dry process is carried out,
and thus, resist pattern is formed.
[0141] As described above, according to the lithography process
using immersion exposure, liquid film formed on the resist film
surface after exposure process is subjected to development process
without drying it. Therefore, it is possible to lithography process
simplifying the process.
[0142] PEB process is carried out in water; therefore, acid
generated from the resist film surface is trapped by pure water. As
a result, it is possible to greatly prevent acid from adsorption to
the resist film surface. Thus, effective exposure has no variations
by adsorbed acid in the wafer surface; as a result, resist
dimension uniformity can be improved. More specifically, the
dimension variation is reduced from 7.8 to 4.7 nm at 3.sigma. in
the wafer surface of repeated pattern having the ling dimension of
130 nm and the space dimension of 130 nm.
[0143] In the embodiment, the PEB process is carried out the
conditions that application voltage is +2 kV based on the used
resist characteristic, the distance between resist film surface and
the electrode 312 is 100 .mu.m, and heating temperature is
70.degree. C. The present invention is not limited to the foregoing
conditions. It is important that the conditions are properly set in
accordance with the PEB process of the used resist.
[0144] In the embodiment, the voltage applying head scans on the
wafer surface, and thereby, the voltage application area is moved
in the wafer. The same effect is obtained even if the wafer is
moved in a state that the voltage applying head is fixed.
[0145] In the embodiment, repeated pattern having the ling
dimension of 130 nm and the space dimension of 130 nm is used. The
present invention is not limited to the pattern; in this case, the
same effect is obtained even if other patterns are used.
[0146] In the embodiment, lithography process carrying out PEB
process is carried out. The present invention is not limited to the
lithography process. Possibly, there exists the case where PEB
process is not carried out depending on the used resist. In this
case, the PEB process is omitted from the process of the
embodiment.
[0147] In the embodiment, the process until development is carried
out in a state that liquid film is formed, and the present
invention is not limited to the process. For example, the humidity
is controlled to 80% or more during process, and thereby, wafer is
processed without drying liquid on the resist film surface. In this
case, there is no need of effectively substituting pure water for
alkali developer in development; therefore, a normal developer may
be used. Besides, various modifications may be made in the
invention without diverging from the spirit and scope.
Fourth Embodiment
[0148] The substrate processing method of the fourth embodiment
will be described below. The procedure is the same as the third
embodiment; therefore, the flowchart is omitted.
[0149] An anti-reflection film having a thickness of 100 nm is
formed on a semiconductor substrate (hereinafter referred to as
wafer) having a diameter of 300 mm. The anti-reflection film is
formed in the following manner. More specifically, liquid film
containing anti-reflection agent and solvent is formed by spin
coating, and thereafter, is subjected to bake process at
temperature of 190.degree. C. for 60 seconds.
[0150] A positive-tone chemically amplified resist film having a
thickness of 400 nm is formed on the anti-reflection film. The
resist film is formed in the following manner. More specifically,
liquid film containing chemically amplified resist agent and
solvent is formed by spin coating, and thereafter, heat treatment
calling pre-bake is carried out at temperature of 130.degree. C.
for 90 seconds. The pre-bake is the process for volatilizing the
solvent contained the resist.
[0151] After pre-bake, wafer is cooled down by room temperature,
and thereafter, carried to an immersion type aligner (exposure
system) using a ArF excimer laser (wavelength: 193 nm) as a light
source. Reduction projection exposure is carried out via an
exposure mask in a state that the wafer is immersed in pure water.
The following evaluation pattern is used. According to the pattern,
pattern having line dimension of 100 nm and space dimension of 100
nm is repeatedly arranged in one exposure shot with a pitch of 200
nm. A plurality of exposure shots is transferred onto the wafer,
and latent image is formed in positive-tone chemically amplified
resist. In this case, the apparatus disclosed in JPN. PAT. APPLN.
KOKAI No. 6-124873 may be used as the immersion type aligner
(exposure system).
[0152] The latent image is formed using the immersion type aligner
(exposure system), and thereafter, the wafer is carried out of
there in a state that pure water liquid film is formed on the
resist film surface. The wafer is carried to the heating apparatus
in a state that pure water liquid film is formed on the resist film
surface, and thereafter, post exposure bake (PEB) process is
carried out. The PEB process is carried out in a state that pure
water liquid film is formed on the resist film surface.
[0153] FIG. 14 is a schematic view to explain PEB process by a
heating apparatus used in the fourth embodiment. In FIG. 14, the
same reference numerals are used to designate portions identical to
FIG. 4, and the details are omitted.
[0154] Liquid stream of pure water 301 is formed on the resist film
104. A transparent plate 302 transmitting irradiation light is
located above the resist film 104. Pure water 301 is filled in the
space between the transparent plate 302 and the surface of the
resist film 104.
[0155] Light from a halogen lamp light source (not shown) outside
the heating head 213 is guided via optical fiber 212, and
irradiated to and the surface of the resist film 104 from the
heating head 213. The irradiated light, that is, the wavelength
from 2.2 to 3.5 .mu.m pure water absorbs cut by a filter (not
shown).
[0156] During heating by light irradiation, liquid stream of pure
water is formed on the resist film surface by water stream forming
means and temperature control means (not shown). In this case,
these means control the temperature and flow speed of the liquid
stream. The heating section (heating head) scans the wafer from the
one end to the other end o the wafer so that desired heat treatment
can be carried out on the wafer surface. In the fourth embodiment,
the heating head is divided into several parts in the direction
vertical to the scanning direction, and each luminance is
independently controlled. In the embodiment, the heating head group
comprising several heating heads is formed into a slit (rectangle)
shape having a length of 320 mm and a width of 6 mm. The direction
of the liquid stream of pure water 301 is reverse to the moving
direction of the heating section. Liquid stream having arbitrary
direction may be formed.
[0157] In view of resist dimension uniformity in the wafer surface
after development, uniform calorie must be applied to the wafer
surface in PEB process. The calorie is controlled in the same
manner as the first embodiment.
[0158] Uniform PEB process is carried out in the wafer surface
using the heating apparatus, and thereafter, the wafer is carried
out of the apparatus in a state that pure water liquid film is
formed on the resist film surface. The wafer is carried to a
developer in a state that pure water liquid film is formed on the
resist film surface, and developed using alkali developer. In this
case, pure water existing on the resist film surface must be
effectively substituted for the alkali developer. Here, a developer
disclosed in JPN. PAT. APPLN. KOKAI No. 2002-252167 may be used as
the developer. After development is completed, dry process is
carried out, and thus, resist pattern is formed.
[0159] As described above, according to the lithography process
using immersion exposure, liquid film formed on the resist film
surface after exposure process is subjected to development process
without drying it. Therefore, it is possible to lithography process
simplifying the process.
[0160] PEB process is carried out in water; therefore, acid
generated from the resist film surface is trapped by pure water. As
a result, it is possible to greatly prevent acid from adsorption to
the resist film surface. Thus, effective exposure dose has no
variations by adsorbed acid in the wafer surface; as a result,
resist dimension uniformity can be improved. More specifically, the
dimension variation is reduced from 6.7 to 4.1 nm at 3.sigma. in
the wafer surface of repeated pattern having the ling dimension of
100 nm and the space dimension of 100 nm.
[0161] In the fourth embodiment, light from the light source is
guided into the apparatus via several optical fibers. The present
invention is not limited to the structure described above; in this
case, light from lamp may be directly irradiated. In the
embodiment, halogen lamp is used as the light source. The present
invention is not limited to the halogen lamp; in this case, any
other lamps may be used so long as they have a wavelength range
where resist does not exposure and can heat. It is desirable to
select light having a wavelength having no absorption to liquid on
the resist film surface.
[0162] In the embodiment, the heating head used as the heat source
is moved in the wafer while scanning selective heating range. The
same effect is obtained even if the stage holding the wafer is
moved in a state of fixing the heating head.
[0163] In the embodiment, repeated pattern having the line
dimension of 100 nm and the space dimension of 100 nm is used. The
present invention is not limited to the pattern; in this case, the
same effect is obtained even if other patterns are used.
[0164] In the embodiment, the process until development is carried
out in a state that liquid film is formed, and the present
invention is not limited to the process. For example, the humidity
is controlled to 80% or more during process, and thereby, wafer is
processed without drying liquid on the resist film surface. In this
case, there is no need of effectively substituting pure water for
alkali developer in development; therefore, a normal developer may
be used. Besides, various modifications may be made in the
invention without diverging from the spirit and scope.
Fifth Embodiment
[0165] FIG. 15 is a view to explain the structure of a processing
apparatus according to a fifth embodiment of the present
invention.
[0166] As shown in FIG. 15, the processing apparatus includes a PEB
head 410 for carrying out PEB process by lamp irradiation, and a
development head 420 for carrying out development. The PEB head 410
moved to one direction by moving mechanism (not shown) while
irradiating light to the resist film 104 having liquid film 401 on
the surface, like the first embodiment. The development head 420
moved to one direction by moving mechanism (not shown) while
carrying out development.
[0167] The structure of the PEB head 410 will be described with
reference to FIG. 16. FIG. 16 is a view to explain the structure of
the PEB head 410 according to the fifth embodiment of the present
invention. As illustrated in FIG. 16, the PEB head includes a light
heating section 411, a supply section 412 and a sucker 413. Supply
section 412, light heating section 411 and sucker 413 are arranged
successively from the forward side of the moving direction of the
PEB head 410.
[0168] The light heating section 411 guides light from halogen lamp
source located outside the PEB head 410 to the light heating
section 411 via optical fiber, and irradiates the light to the
surface of the resist film 104, as described in the first
embodiment. In this case, the halogen lamp source may be arranged
in the light heating section 411.
[0169] The supply section 412 supplies pure water to the resist
surface. The sucker 413 sucks pure water on the resist film 104.
The supply section 412 and the sucker 413 operate so that liquid
stream 415 can be generated in a heating section by light 414.
[0170] A development solution and rinse liquid supply unit
disclosed in FIG. 5 of JPN. PAT. APPLN. KOKAI No. 2002-252167 may
be used as the development head 420.
[0171] The method of forming resist pattern using the processing
apparatus will be described below.
[0172] The anti-reflection film and the resist film are formed, and
thereafter, exposure is carried out using an immersion type aligner
(exposure system), like the third embodiment.
[0173] Latent image is formed using the immersion type aligner, and
thereafter, wafer is carried out of the immersion type aligner in a
state that pure water liquid film is formed on the resist film
surface.
[0174] The wafer is carried to the processing apparatus shown in
FIG. 15 in a state that pure water liquid film is formed on the
resist film surface. The process by the processing apparatus will
be described with reference to FIG. 17A and FIG. 17B. FIG. 17A and
FIG. 17B are plan views to explain the process using the processing
apparatus according to the firth embodiment of the present
invention.
[0175] As shown in FIG. 17A, the PEB head 410 scans the surface of
the resist film 104 to carry out PEB process in a state that pure
water liquid film is formed on the resist film 104. After PEB
process, the pure water liquid film is kept in a state of being
formed. This state is realized in a manner of controlling pure
water supply speed from the supply section 412 and pure water
suction speed from the sucker 413 in accordance with the scan speed
of the PEB head 410.
[0176] After PEB process, the development head 420 scans the
surface of the resist film 104 while developing it in a state that
pure water liquid film is formed on the resist film 104, as shown
in FIG. 17B.
[0177] As described above, according to the lithography process
using immersion exposure, liquid film formed on the resist film
surface after exposure process is subjected to development process
without drying it. Therefore, it is possible to lithography process
simplifying the process.
[0178] PEB process is carried out in water; therefore, acid
generated from the resist film surface is trapped by pure water,
and thereafter, sucked by the sucker. As a result, it is possible
to greatly prevent acid from adsorption to the resist film surface.
Thus, effective exposure dose has no variation by adsorbed acid in
the wafer surface; as a result, resist dimension uniformity can be
improved. More specifically, the dimension variation is reduced
from 7.2 to 4.1 nm at 3.sigma. in the wafer surface of repeated
pattern having the ling dimension of 120 nm and the space dimension
of 150 nm.
[0179] The processing apparatus of the fifth embodiment is used,
and thereby, PEB process and development process are simultaneously
carried out. Therefore, it is possible to make compact the
apparatus for carrying out PEB and development. PEB and development
processes are carried out in the identical apparatus, and thereby,
process time can be shortened. If the scan speed of the PEB head
410 is faster than that of the development head 420, the PEB head
410 and the development head 420 may simultaneously scan the wafer
surface. If the scan speed of the PEB head 410 is approximately the
same as that of the development head 420, process may be carried
out using a head integrated with the PEB head 410 and the
development head 420.
[0180] In the fifth embodiment, repeated pattern having the line
dimension of 120 nm and the space dimension of 150 nm is used. The
present invention is not limited to the pattern; in this case, the
same effect is obtained even if other patterns are used.
[0181] There is the case of carrying out no PEB process depending
on the kind of resist. In this case, development process is made
without carrying out the PEB process. In also case, it is
preferable to carry out development using the immersion aligner
without drying liquid on the resist film. Development is carried
out without removing liquid film formed during exposure, and
thereby, there is no need of carrying out the process of drying the
liquid film. When drying liquid film, liquid stain is formed on the
resist surface. However, no liquid stain is formed because there is
no need of carrying out dry process. If the liquid stain is formed,
wettability of developer to resist film changes. As a result,
resist pattern formed after development becomes non-uniform.
However, dry process is not carried out; therefore, it is possible
to prevent non-uniformity of resist pattern due to the liquid
stain.
Sixth Embodiment
[0182] Anti-reflection film and resist film coating, exposure and
development processes overlap with the first embodiment; the
details are omitted. Only PEB process will be described below.
[0183] FIG. 18 is a schematic view the structure of a heating
apparatus according to a sixth embodiment of the present invention.
In FIG. 18, the same reference numerals are used to designate the
portions identical to FIG. 4, and the explanation is omitted.
[0184] In the heating apparatus, PEB process is carried out while
observing the processing condition of resist film in the
irradiation range to which light from heating head 213 is
irradiated. Monitor light heating head 215, monitor light receiving
head 216, and controller 231 monitor the processing condition. The
monitor light heading head 215 irradiate monitor light onto the
resist film 104 of the range to which light is irradiated. The
monitor light receiving head 216 receives monitor light reflected
by the resist film 104, and measures light intensity distribution.
Preferably, the light intensity distribution is given by measuring
the moving direction distribution of the heating range. The light
intensity distribution transmits the measured light intensity
distribution to the controller 231. More specifically, the heating
process monitoring method disclosed in JPN. PAT. APPLN. KOKAI No.
2000-82661 may be employed.
[0185] The controller 231 calculates the processing condition of
the heating range from the light intensity distribution. If the
process of the heating range is late, the controller 231 reduces
the flowing speed of air stream 223 to prevent cooling to the
heating range. Conversely, the controller 231 increases the flowing
speed of air stream 223 to facilitate cooling to the heating range.
As described above, heating is carried out while acquiring
processing information, and thereby, heating is uniformly carried
out with respect to the wafer surface.
[0186] The process control of the heating range is not limited to
the method of controlling the speed of air stream 233. For example,
control may be made with respect to at least one of speed and
temperature of the air stream, substrate temperature by temperature
control plate 202, heating temperature by heating head 213 and scan
speed of heating section 213. The control may be applied to the
heating apparatus carrying out heating while forming liquid stream
and not air stream.
[0187] Measurement means for measuring temperature by measuring
infrared light emitted from the heating range may be provided in
addition to monitor light heading head 215 and monitor light
receiving head 216. Several temperature measurement means such as
thermal couples may be arranged in the heating range thermally
separating from the temperature control plate 202 on which the
substrate 101 is placed, along the moving direction of the heating
range. The controller 231 carries out control in accordance with
the measured result of these measurement means.
Seventh Embodiment
[0188] FIG. 19 is a flowchart to explain the method of forming
resist film according to a seventh embodiment of the present
invention. FIG. 20A to FIG. 20D are cross-sectional views showing
the process of manufacturing a semiconductor device according to
the seventh embodiment of the present invention.
[0189] (Step S301)
[0190] As shown in FIG. 2A, an anti-reflection film 102 having a
thickness of 60 nm is formed on a semiconductor substrate
(hereinafter, referred to as wafer) 101 having a diameter of 200
mm. The anti-reflection film 102 is formed in a manner of carrying
out bake process at 190.degree. C. for 60 seconds after forming a
liquid film containing anti-reflection agent and solvent by spin
coating.
[0191] (Step S302)
[0192] As illustrated in FIG. 2B, the wafer 101 is coated with
chemically amplified resist solution in which positive-tone
chemically amplified resist material is added to solvent, and
thereby, liquid film 401 is formed.
[0193] The following processes may be carried out to coat resist
solution. One is meniscus coating using capillary phenomenon, and
another is coating by reciprocating a very-thin nozzle on the
substrate. In addition, another is spray coating of spraying
chemical liquid. In the embodiment, liquid film is formed using the
above-mentioned coating by reciprocating a very-thin nozzle on the
substrate.
[0194] (Step S303)
[0195] Wafer is carried to a heating apparatus shown in FIG. 21,
and thereafter, heating is carried out. Heating volatilizes solvent
contained in the liquid film 403, and thereafter, dry process is
carried out. As depicted in FIG. 20C, resist film 404 is formed.
The explanation will be made below.
[0196] FIG. 21 is a view schematically showing the structure of a
heating apparatus according to the seventh embodiment of the
present invention. The entire apparatus structure is the same as
the first embodiment; therefore, the details are omitted
herein.
[0197] A heating head 450 includes a heating section 451, an air
blower 452 and an air sucker 453. The heating section 541
irradiates light 455 supplied from one halogen lamp light source
(not shown) via optical fiber (not shown) to the liquid film 403.
The air blower 452 is arranged on the backward side in the moving
direction of the heating head 450. The air sucker 453 is arranged
on the backward side in the moving direction of the heating head
450.
[0198] Gas is introduced onto the wafer 101 from the air blower
452, and sucked by the air sucker 453, and thereby, air stream 454
is formed. The sir stream 454 flows from the backward side to the
forward side in the moving direction of the heating head 450. The
wafer 101 is placed on a stage (not shown), which is controlled to
23.degree. C. in temperature. By doing so, the range to which light
is irradiated is selectively heated.
[0199] Heating by the irradiation of light 455 volatilizes solvent
contained in the liquid film 401. The volatilized solvent is
carried to the downstream side by the air stream 454. The air
sucker 453 is located adjacent to the heating section 451, so that
the amount of solvent adhering again to the surface of the resist
film 404 can be reduced.
[0200] The light 455 from the heating section 451 is irradiated,
and the irradiated light facilitates heating and drying. The
heating head 450 is moved by a moving mechanism (not shown) while
scanning from the left to the right in the drawing. The heating
head 450 moves from one end of the wafer 101 to the other end
thereof while scanning the wafer, and thereby, resist dry by
heating is performed on the entire surface of the wafer.
[0201] As descried above, heating is carried out under stream
atmosphere flowing from the downstream side to the upstream side to
the scanning direction of the heating head. By doing so, dry
process is carried out with high precision without giving influence
to the area where dry process is made.
[0202] (Steps S304 and S305)
[0203] The aligner exposes the wafer. As seen from FIG. 20D,
development and dry processes are carried out, and resist pattern
404 is formed. If the resist film 404 is chemically amplified
resist, PEB process must be carried out. The PEB process may be
made using the apparatus and method shown in the foregoing
embodiments.
[0204] In the seventh embodiment, processing head is carried out
under stream atmosphere flowing from the downstream side to the
upstream side to the scanning direction of the heating head. The
present invention is not limited to the embodiment. The direction
of the air stream may be changed in accordance with the kind of
liquid film. The seventh embodiment is applied to the process of
forming resist film. In this case, the seventh embodiment may be
applicable to the process of forming insulating film and metal
film.
[0205] The present invention is not limited to the embodiments
described above, and various modifications may be made in the
invention without departing from the spirit or scope of the
inventive concept. The respective embodiments include various
inventive steps, and disclosed several constituent requirements are
properly combined, and thereby, various inventions are obtained.
Even though some are deleted from all constituent requirements
shown in the embodiments, it is possible to solve the problem
described in the column of "Problem that the invention is to
solve". If the effect described in the column of "Effect of the
invention" is obtained, the deleted constituent requirements can be
selected as the invention.
[0206] Additional advantages and modifications will readily occur
to those skilled in the art. Therefore, the invention in its
broader aspects is not limited to the specific details and
representative embodiments shown and described herein. Accordingly,
various modifications may be made without departing from the spirit
or scope of the general inventive concept as defined by the
appended claims and their equivalents.
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