U.S. patent application number 11/848144 was filed with the patent office on 2007-12-20 for field effect transistor device with channel fin structure and method of fabricating the same.
This patent application is currently assigned to SAMSUNG ELECTRONICS CO., LTD.. Invention is credited to Hyeoung-Won SEO, Du-Heon SONG, Woun-Suck YANG, Jae-Man YOON.
Application Number | 20070293011 11/848144 |
Document ID | / |
Family ID | 34836732 |
Filed Date | 2007-12-20 |
United States Patent
Application |
20070293011 |
Kind Code |
A1 |
SEO; Hyeoung-Won ; et
al. |
December 20, 2007 |
FIELD EFFECT TRANSISTOR DEVICE WITH CHANNEL FIN STRUCTURE AND
METHOD OF FABRICATING THE SAME
Abstract
A finFET device includes a semiconductor substrate having
specific regions surrounded with a trench. The trench is filled
with an insulating layer, and recess holes are formed within the
specific regions such that channel fins are formed by raised
portions of the semiconductor substrate on both sides of the recess
holes. Gate lines are formed to overlie and extend across the
channel fins. Source/drain regions are formed at both ends of the
channel fins and connected by the channel fins. Other embodiments
are described and claimed.
Inventors: |
SEO; Hyeoung-Won;
(Gyeonggi-do, KR) ; YANG; Woun-Suck; (Gyeonggi-do,
KR) ; SONG; Du-Heon; (Gyeonggi-do, KR) ; YOON;
Jae-Man; (Seoul, KR) |
Correspondence
Address: |
MARGER JOHNSON & MCCOLLOM, P.C.
210 SW MORRISON STREET, SUITE 400
PORTLAND
OR
97204
US
|
Assignee: |
SAMSUNG ELECTRONICS CO.,
LTD.
Gyeonggi-do
KR
|
Family ID: |
34836732 |
Appl. No.: |
11/848144 |
Filed: |
August 30, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10938436 |
Sep 9, 2004 |
7279774 |
|
|
11848144 |
Aug 30, 2007 |
|
|
|
Current U.S.
Class: |
438/299 ;
257/E21.442 |
Current CPC
Class: |
H01L 29/66795 20130101;
H01L 29/785 20130101 |
Class at
Publication: |
438/299 ;
257/E21.442 |
International
Class: |
H01L 21/336 20060101
H01L021/336 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 13, 2004 |
KR |
2004-9606 |
Claims
1. A method of fabricating a field effect transistor (FET) device
having a channel fin structure, the method comprising: providing a
semiconductor substrate having a specific region; etching the
semiconductor substrate to form a trench surrounding the specific
region; filling the trench with a trench-insulating layer; opening
recess holes within the specific region such that channel fins are
formed by raised portions of the semiconductor substrate on both
sides of the recess holes: forming gate lines that overlie and
extend across the channel fins; and forming source/drain regions at
both ends of the channel fins.
2. The method of claim 1, wherein etching the semiconductor
substrate comprises etching the substrate to form the trench
comprises etching the semiconductor substrate to form a trench
having a cross-sectional profile shaped like a rectangle, a reverse
triangle, or a reverse trapezoid.
3. The method of claim 1, wherein filling the trench with the
trench-insulating layer comprises filling the trench with an
oxide.
4. The method of claim 1, wherein opening recess holes to form
channel fins comprises opening recess holes to form channel fins
having a cross-sectional profile shaped like a pointed triangle, a
rectangle, or a trapezoid.
5. The method of claim 1, wherein forming gate lines comprises
sequentially stacking gate dielectric layers, gate electrodes, and
stopper layers on the substrate.
6. The method of claim 1, wherein forming gate lines comprises
filling the recess holes with the gate lines.
7. A method of fabricating a field effect transistor (FET) device
having a channel fin structure, the method comprising: providing a
semiconductor substrate having a specific region; covering the
specific region with a mask block; forming a spacer on a sidewall
of the mask block; etching a trench in the semiconductor substrate
using the mask block as an etch mask; filling the trench with a
trench-insulating layer; removing the mask block from the
semiconductor substrate; forming mask lines on the semiconductor
substrate such that the mask lines cross over the spacer; etching a
recess hole within the specific region of the semiconductor
substrate using the mask lines and the spacer as an etch mask such
that channel fins are formed from raised portions of the
semiconductor substrate disposed on sides of the recess hole;
removing the mask lines and the spacer such that the channel fins
are exposed; forming gate lines that overlie and extend across the
channel fins; and forming source/drain regions at ends of the
channel fins.
8. The method of claim 7, wherein covering the specific region with
a mask block comprises: depositing, in sequence, a nitride layer
and an anti-reflection coating layer on the semiconductor
substrate; and patterning the nitride layer and the anti-reflection
coating layer.
9. The method of claim 8, wherein covering the specific region with
a mask block further comprises depositing an oxide layer on the
semiconductor substrate before depositing the nitride layer.
10. The method of claim 8, wherein covering the specific region
with a mask block further comprises etching the patterned nitride
layer in a lateral direction.
11. The method of claim 9, wherein removing the mask block
comprises removing, in sequence, the anti-reflective coating layer
and the nitride layer while leaving the oxide layer on the
semiconductor substrate.
12. The method of claim 8, wherein removing the mask block
comprises: removing upper parts of the spacer and the
anti-reflective coating layer by a chemical mechanical polishing
process; and removing the nitride layer by using etchant.
13. The method of claim 9, wherein etching the recess hole
comprises etching the oxide layer by using the mask lines and the
spacer as an etch mask.
14. The method of claim 9, wherein removing the mask lines and the
spacer comprises removing the oxide layer.
15. The method of claim 7, wherein forming the spacer comprises:
coating the mask block with an insulating material; and
etching-back the insulating material.
16. The method of claim 7, wherein the mask block has a rectangular
flat shape in a plan view.
17. The method of claim 7, wherein the mask lines are spaced apart
from each other such that the spacer is partly exposed
therebetween.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a Divisional of U.S. patent application
Ser. No. 10/938,436, filed on Sep. 9, 2004, now pending, which
claims priority from Korean Patent Application No. 2004-9606, filed
on Feb. 13, 2004, the contents of which are incorporated by
reference in their entirety for all purposes.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] This disclosure relates generally to a semiconductor device
and, more particularly, to a field effect transistor (FET) device
having a fin-shaped channel and a method of fabricating the FET
device.
[0004] 2. Description of the Related Art
[0005] Along with advances in semiconductor technology, a
semiconductor integrated circuit (IC) device becomes faster in
operation and higher integrated. To continue performance
enhancement of the device and reduction in leakage current, device
design engineers have researched and developed a variety of new
device structures available for sub-10 nm generations. One
promising device structure is a field effect transistor device
having a fin-shaped channel (finFET), such as the structure
recently proposed by Chenming Hu, et al. of the Regents of the
University of California, USA.
[0006] This finFET device structure features a transistor channel
that is formed on the vertical surfaces of an ultrathin Si fin and
controlled by gate electrodes formed on both sides of the fin, and
two gates that are self-aligned to each other and to the
source/drain regions. Thus, this structure may also be referred to
as a self-aligned double-gate finFET.
[0007] FIG. 1 is a plan diagram illustrating a conventional finFET
device. FIG. 2 is a cross-sectional diagram further illustrating
the conventional finFET device, and taken along the line II-II in
FIG. 1.
[0008] Referring to FIGS. 1 and 2, the finFET device is fabricated
on a silicon substrate 8 that is covered with an insulating layer
7. A vertically extended channel fin 3 is provided on the substrate
8 and is covered with a gate oxide layer 5. Raised source/drain
regions 1 and 2 are provided at both ends of the channel fin 3 on
the substrate 8. The source/drain regions 1 and 2 are connected by
the channel fin 3. A gate 6 is disposed between the source/drain
regions 1 and 2 and extends across the channel fin 3. Additionally,
a gate spacer (not shown) may be formed on both sides of the gate
6.
[0009] Unfortunately, the conventional finFET device described
above may also have some drawbacks. For example, the conventional
finFET device may need complicated fabricating processes since, if
a number of channels are formed, a corresponding number of
source/drain regions are required. Complicated processes may
increase the likelihood of errors. Furthermore, the shrinkage of
pattern dimensions may require increased doping impurity
concentrations. This may result in an increase of leakage current,
and thereby device characteristics, such as refresh time, are
degraded.
[0010] Embodiments of the invention address these and other
disadvantages of the conventional art.
SUMMARY OF THE INVENTION
[0011] Some embodiments of the invention provide a finFET device
that may effectively suppress leakage current. Other embodiments of
the invention provide a simplified method of fabricating a finFET
device that effectively suppresses leakage current.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 is a plan diagram illustrating a conventional finFET
device.
[0013] FIG. 2 is a cross-sectional diagram taken along the line
II-II of FIG. 1.
[0014] FIG. 3A through 10D illustrate a method of fabricating a
finFET device and a resulting structure in accordance with some
embodiments of the present invention.
[0015] FIG. 3A is a plan diagram illustrating an initial structure
including mask blocks on a semiconductor substrate.
[0016] FIG. 3B is a cross-sectional diagram taken along the line
IIIB-IIIB of FIG. 3A.
[0017] FIG. 4 is a cross-sectional diagram illustrating a laterally
etched nitride layer of the mask block.
[0018] FIG. 5 is a cross-sectional diagram illustrating a spacer
formed on sidewalls of the mask block.
[0019] FIG. 6 is a cross-sectional diagram illustrating a trench
formed in the substrate.
[0020] FIG. 7 is a cross-sectional diagram illustrating the trench
filled with a trench-insulating layer.
[0021] FIG. 8A is a plan diagram illustrating a structure from
which the mask blocks are removed.
[0022] FIG. 8B is a cross-sectional diagram taken along the line
VIIIB-VIIIB of FIG. 8A.
[0023] FIG. 9A is a plan diagram illustrating a mask layer provided
on a structure of FIG. 8A.
[0024] FIG. 9B is a cross-sectional diagram taken along the line
IXB-IXB of FIG. 9A.
[0025] FIG. 10A is a plan diagram illustrating gate lines provided
on a prior structure of FIG. 9A.
[0026] FIG. 10B is a cross-sectional diagram taken along the line
XB-XB of FIG. 10A.
[0027] FIG. 10C is a cross-sectional diagram taken along the line
XC-XC of FIG. 10A.
[0028] FIG. 10D is a cross-sectional diagram taken along the line
XD-XD of FIG. 10A.
[0029] FIGS. 11 through 13 illustrate a method of fabricating a
finFET device and a resulting structure in accordance with some
other embodiments of the invention.
DETAILED DESCRIPTION OF THE INVENTION
[0030] Exemplary, non-limiting embodiments of the invention will
now be described more fully hereinafter with reference to the
accompanying drawings. This invention may, however, be embodied in
many different forms and should not be construed as limited to the
exemplary embodiments set forth herein. Rather, the disclosed
embodiments are provided so that this disclosure will be thorough
and complete, and will fully convey the scope of the invention to
those skilled in the art. The principles and feature of this
invention may be employed in varied and numerous embodiments
without departing from the scope of the invention.
[0031] In the description, well-known structures and processes have
not been described or illustrated in detail to avoid obscuring the
present invention. It will be appreciated that the figures are not
drawn to scale. Rather, for simplicity and clarity of illustration,
the dimensions of some of the elements are exaggerated relative to
other elements. Like reference numerals and characters are used for
like and corresponding parts of the various drawings.
[0032] FIGS. 3A through 10D illustrate a method of fabricating a
finFET device and a resulting structure in accordance with some
embodiments of the invention.
[0033] FIGS. 3A and 3B show an initial structure provided on a
semiconductor substrate. FIG. 3A is a plan diagram illustrating an
initial structure, and FIG. 3B is a cross-sectional diagram taken
along the line IIIB-IIIB of FIG. 3A.
[0034] Referring to FIGS. 3A and 3B, after a semiconductor
substrate 20 made of silicon, for example, is provided a nitride
layer 22 and an anti-reflection coating layer 23 are deposited in
sequence and patterned on the semiconductor substrate 20. In
addition, an oxide layer 21 may be interposed between the
semiconductor substrate 20 and the nitride layer 22 so as to
enhance adhesive strength. The anti-reflection coating layer 23 and
the underlying nitride layer 22 form together a plurality of mask
blocks B1, each of which has a rectangular flattened shape in a
plan view and is laterally spaced apart from an adjacent mask
blocks B1.
[0035] Thereafter, as shown in FIG. 4, the patterned nitride layer
22 is slightly etched in the lateral direction by using etchant
such as phosphoric acid. This process effectively shrinks the width
of a recess hole (H2 in FIG. 9B) as will be described later. The
narrower recess hole will make it possible to reduce the distance
between adjacent channel fins, thus allowing much smaller
dimensions of circuit patterns.
[0036] Next, a resultant structure is completely coated with
suitable insulating material, which is then subjected to an
etch-back process. So, as shown in FIG. 5, a spacer 24 is formed on
sidewalls of each mask block B1.
[0037] As shown in FIG. 6, an exposed region of the semiconductor
substrate 20 is then partially etched using both the mask block B1
and the spacer 24 as an etch mask, so that a trench H1 is formed in
the exposed region of the substrate 20. As seen in FIG. 6, the
trench H1 may have a cross-sectional profile of a rectangle.
However, the trench H1 may alternatively have other cross-sectional
profiles such as a reverse triangle (i.e., overturned triangle), a
reverse trapezoid, or other geometric shapes.
[0038] Next, as shown in FIG. 7, the trench H1 is filled with
insulating material such as oxide, so that a trench-insulating
layer 25 is produced in the trench H1. Shallow trench isolation
(STI) techniques that are well known in this art may be used to
form and fill the trench H1.
[0039] After the trench-insulating layer 25 is formed, the mask
blocks B1 composed of the anti-reflective coating layer 23 and the
nitride layer 22 are completely removed. As shown in FIGS. 8A and
8B, however, the spacer 24 and the oxide layer 21 still remain on
the substrate 20. This removal step may include removing upper
parts of the spacer 24 as well as the anti-reflective coating layer
23 by a chemical mechanical polishing (CMP) process, and further,
removing the nitride layer 22 by using etchant such as phosphoric
acid. FIG. 8A is a plan diagram illustrating a resultant structure
on the substrate 20, and FIG. 8B is a cross-sectional diagram taken
along the line VIIIB-VIIIB of FIG. 8A.
[0040] Additionally, FIG. 9A is a plan diagram illustrating a mask
layer provided on the above resultant structure in FIG. 8A, and
FIG. 9B is a cross-sectional diagram taken along the line IXB-IXB
of FIG. 9A.
[0041] Referring to FIGS. 9A and 9B, the mask layer M1 is deposited
over the structure and then patterned. Patterned lines of the mask
layer M1 are spaced apart from each other and are extended across
the rectangular patterns of the oxide layer 21. That is, the
patterned lines of the mask layer M1 cross over the remaining
spacers 24. Therefore, the spacers 24 and the oxide layer 21 are
partly exposed between the patterned lines of the mask layer
M1.
[0042] While the mask layer M1 and exposed portions of the spacers
24 are used together as an etch mask, the structure is subjected to
an etch process. Therefore, exposed portions of the oxide layer 21
are removed, and further, underlying portions of the substrate 20
are partially removed, thus forming recess holes H2. Silicon recess
techniques well known in this art may be used to form the recess
holes H2. By etching, the trench-insulating layer 25 is also
partially removed.
[0043] Thereafter, the mask layer M1, the spacers 24, and the oxide
layer 21 are all removed, thus leaving raised portions C11, C12,
C13, and C14 of the substrate 20. Each raised portion C11 through
C14 may form channel fins, a pair of channel fins being located on
the sides of each recess hole H2. Furthermore, each channel fin is
located between the trench-insulating layer 25 and the recess hole
H2.
[0044] Next, as shown in FIGS. 10A through 10D, gate lines 26 are
provided over a structure which was shown above in FIGS. 9A and 9B,
covering the channel fins C11-C14. FIG. 10A is a plan diagram
illustrating the gate lines 26 on the structure, and FIG. 10B is
cross-sectional diagram taken along the line XB-XB of FIG. 10A.
Additionally, FIG. 10C is a cross-sectional diagram taken along the
line XC-XC of FIG. 10A, and FIG. 10D is a cross-sectional diagram
taken along the line XD-XD of FIG. 10A.
[0045] The gate lines 26 extend across the channel fins C11-C14, as
is best shown in FIG. 10A. Each gate line 26 includes a gate
dielectric layer, a gate electrode, and a stopper layer, which are
stacked in sequence on the substrate 20 but for clarity are not
illustrated separately. The gate electrode may be formed of
conductive material such as copper, whereas the gate dielectric
layer and the stopper layer may be formed of an insulating material
such as oxide.
[0046] After the gate lines 26 are formed, source/drain regions Q1
through Q3 are formed at both ends of the channel fins C11-C14 by
doping an impurity, adjoining both sides of the gate lines 26, as
is best shown in FIGS. 10B and 10D. So the source/drain regions
Q1-Q3 are connected by the channel fins C11-C14. Instead of the
profile illustrated in FIG. 10D, the source/drain regions Q1-Q3 may
alternatively have other profiles such as a shallow rectangle, for
example.
[0047] Thereafter, a suitable insulating layer, a metal contact, a
metal line, and so on are provided in sequence on the above
structure. These processes are well known in this art, and
therefore a detailed discussion is omitted.
[0048] As seen from FIGS. 10A-10D, a resulting structure of the
finFET device according to these embodiments includes the
semiconductor substrate 20, the trench-insulating layer 25, the
gate lines 26, and the source/drain regions Q1-Q3. The substrate 20
has the trench (H1 in FIG. 6) that defines specific regions
surrounded therewith and is filled with the trench-insulating layer
25. The channel fins C11-14 are formed along both sides of the
specific regions of the substrate 20. The gate lines 26 overlay and
extend across the channel fins C11-C14. The source/drain regions
Q1-Q3 are formed at both ends of the channel fins C11-C14 and also
connected by the channel fins C11-C14.
[0049] As discussed, the channel fins C11-C14 are formed in the
semiconductor substrate 20 having the trench structure, and
further, the trench structure can be provided using existing
processes. Therefore, the embodiments provide a relatively simple
fabrication process, and therefore the likelihood of process errors
is reduced.
[0050] The finFET device according to the embodiments described
above has a dual fin structure wherein the respective one in the
pair of channel fins C11-C14 is separated from the other in the
pair by the gate dielectric layer provided in the recess hole H2.
Additionally, the pairs of channel fins C11-C12, C13-C14 connect
together the source/drain regions Q1-Q3. To more effectively
suppress unwanted leakage current between the adjacent channels,
the bottom of the recess hole H2 is positioned between the top and
bottom of the trench-insulating layer 25.
[0051] FIGS. 11 through 13 illustrate a method of fabricating a
finFET device and a resulting structure in accordance with other
embodiments of the invention.
[0052] Referring to FIG. 11, an oxide layer 21, a nitride layer 22,
and an anti-reflection coating layer 23 are deposited in sequence
and patterned on a semiconductor substrate 30. While the patterned
layers 21, 22 and 23 are used as an etch mask, an exposed region of
the semiconductor substrate 30 is partially etched. Thus a trench
H3 is formed in the exposed region of the substrate 30.
[0053] Next, as shown in FIG. 12, the trench H3 is filled with
insulating material such as oxide, so a trench-insulating layer 35
is produced in the trench H3. The patterned layers 21, 22 and 23
are then removed, and a suitable fin mask pattern (not shown) is
provided on the substrate 30. With the fin mask pattern used,
exposed portions of the substrate 30 are recessed by etching to
form recess holes H4. By etching, the trench-insulating layer 35 is
also partially removed.
[0054] Next, the fin mask pattern is removed, leaving raised
portions C21, C22, C23, and C24 on the substrate 30. The raised
portions C21-C24 form channel fins, a pair of which is located
along the sides of each recess hole H4. As illustrated in FIG. 12,
the channel fins C21-C24 may have a cross-sectional profile shaped
like a pointed triangle. Alternatively, the channel fins C21-24 may
have other cross-sectional profiles, for example, profiles that are
shaped like a rectangle, a trapezoid, or some other geometric
shape.
[0055] Next, as shown in FIG. 13, gate lines 36 are provided over a
resulting structure in FIG. 12, covering the channel fins C21-C24.
Subsequent processes are the same as those discussed above with
respect to the embodiments illustrated in FIGS. 3-10, and therefore
a detailed discussion is omitted.
[0056] The invention may be practiced in many ways. Exemplary,
non-limiting descriptions of some embodiments of the invention are
described in the following paragraphs.
[0057] According to some embodiments of the invention, a finFET
device includes a semiconductor substrate having a trench formed
therein to define a specific region surrounded with the trench; a
trench-insulating layer filling the trench; at least one channel
fin formed in the specific region; gate lines overlying and
extending across the channel fin; and source/drain regions formed
at both ends of the channel fin and connected by the channel
fin.
[0058] According to other embodiments of the invention, a method of
fabricating a finFET device includes providing a semiconductor
substrate having a specific region; forming a trench in the
semiconductor substrate by etching such that the specific region is
surrounded with the trench; forming a trench-insulating layer
filling the trench; forming recess holes within the specific region
such that channel fins are formed by raised portions of the
semiconductor substrate on both sides of the recess holes; forming
gate lines overlying and extending across the channel fins; and
forming source/drain regions at both ends of the channel fins.
[0059] According to still other embodiments of the invention, a
method of fabricating a finFET device includes providing a
semiconductor substrate having a specific region; forming mask
blocks on the semiconductor substrate such that the mask blocks
cover the specific region; forming a spacer on sidewalls of the
mask blocks; forming a trench in the semiconductor substrate by
etching with the mask blocks used as an etch mask; forming a
trench-insulating layer filling the trench; removing the mask
blocks from the semiconductor substrate; forming mask lines on the
semiconductor substrate such that the mask lines cross over the
spacer; forming recess holes within the specific region by etching
the semiconductor substrate with both the mask lines and the spacer
used as an etch mask such that channel fins are formed by raised
portions of the semiconductor substrate on both sides of the recess
holes; removing both the mask lines and the spacer such that the
channel fins are exposed; forming gate lines overlying and
extending across the channel fins; and forming source/drain regions
at both ends of the channel fins.
[0060] While this invention has been particularly shown and
described with reference to exemplary embodiments thereof, it will
be understood by those skilled in the art that various changes in
form and details may be made therein without departing from the
spirit and scope of the invention as defined by the appended
claims.
* * * * *