Song; Du Heon

Patent Applications and Registrations

Patent applications and USPTO patent grants for Song; Du Heon.The latest application filed is for "semiconductor device".

Company Profile

5.26.25

Song; Du Heon - Seoul KR
Song; Du-heon - Seongnam-si N/A KR
Song; Du-Heon - Gyeongg-do KR
Song; Du-Heon - Yongin-Si KR
SONG; Du-Heon - Gyeonggi-do KR
Song; Du-Heon - Yonging-si JP
Song; Du-Heon - Gyeonggi KR
Song; Du Heon - Kyungki-do KR
Song; Du-Heon - Choongchungbook-Do KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device Grant 10,896,917 - Song , et al. January 19, 2	2021-01-19
Semiconductor Device App 20200127009 - SONG; Min Sung ; et al.	2020-04-23
Semiconductor device Grant 10,529,736 - Song , et al. J	2020-01-07
Semiconductor Device App 20190172840 - SONG; Min Sung ; et al.	2019-06-06
Method of fabricating semiconductor device Grant 8,765,572 - Choi , et al. July 1, 2	2014-07-01
Semiconductor Devices App 20120007165 - LEE; Myoung-Bum ; et al.	2012-01-12
Method Of Fabricating Semiconductor Device App 20110318914 - Choi; Yong-lack ; et al.	2011-12-29
Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the same Grant 7,696,570 - Seo , et al. April 13, 2	2010-04-13
Recessed-type field effect transistor with reduced body effect Grant 7,534,708 - Kim , et al. May 19, 2	2009-05-19
Transistors Of Semiconductor Device Having Channel Region In A Channel-portion Hole And Methods Of Forming The Same App 20090114999 - SEO; Hyeoung-Won ; et al.	2009-05-07
Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same Grant 7,524,733 - Seo , et al. April 28, 2	2009-04-28
Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the same Grant 7,491,603 - Seo , et al. February 17, 2	2009-02-17
Method of fabricating fin field effect transistor using isotropic etching technique Grant 7,429,505 - Seo , et al. September 30, 2	2008-09-30
Semiconductor device having resistor and method of fabricating the same Grant 7,402,871 - Song July 22, 2	2008-07-22
Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the same Grant 7,393,769 - Seo , et al. July 1, 2	2008-07-01
Method of forming asymmetric MOS transistor with a channel stopping region and a trench-type gate Grant 7,378,320 - Seo , et al. May 27, 2	2008-05-27
Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the same Grant 7,354,827 - Seo , et al. April 8, 2	2008-04-08
Method of fabricating a semiconductor device and semiconductor device fabricated thereby App 20080029899 - Song; Du-heon ; et al.	2008-02-07
Recess gate-type semiconductor device and method of manufacturing the same Grant 7,323,746 - Park , et al. January 29, 2	2008-01-29
Field Effect Transistor Device With Channel Fin Structure And Method Of Fabricating The Same App 20070293011 - SEO; Hyeoung-Won ; et al.	2007-12-20
Method of manufacturing recess type MOS transistor having a dual diode impurity layer structure Grant 7,300,845 - Seo , et al. November 27, 2	2007-11-27
Bulk substrates in FinFETs with trench insulation surrounding FIN pairs having FINs separated by recess hole shallower than trench Grant 7,279,774 - Seo , et al. October 9, 2	2007-10-09
Asymmetric Source/drain Transistor Employing Selective Epitaxial Growth (seg) Layer And Method Of Fabricating Same App 20070190734 - SEO; Hyeoung-Won ; et al.	2007-08-16
Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same Grant 7,221,023 - Seo , et al. May 22, 2	2007-05-22
Method of manufacturing a semiconductor device Grant 7,205,208 - Kim , et al. April 17, 2	2007-04-17
Method Of Fabricating Fin Field Effect Transistor Using Isotropic Etching Technique App 20070077693 - SEO; Hyeoung-Won ; et al.	2007-04-05
Method of fabricating fin field effect transistor using isotropic etching technique Grant 7,153,733 - Seo , et al. December 26, 2	2006-12-26
Recessed-type field effect transistor with reduced body effect App 20060234437 - Kim; Dong-Hyun ; et al.	2006-10-19
Semiconductor device having resistor and method of fabricating the same App 20060118885 - Song; Du-Heon	2006-06-08
Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growth Grant 7,034,368 - Song April 25, 2	2006-04-25
Recess gate-type semiconductor device and method of manufacturing the same App 20060060936 - Park; Won-Mo ; et al.	2006-03-23
Method of manufacturing a semiconductor device App 20050272199 - Kim, Dong-Hyun ; et al.	2005-12-08
Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the same App 20050218434 - Seo, Hyeoung-Won ; et al.	2005-10-06
Method of fabricating fin field effect transistor using isotropic etching technique App 20050208715 - Seo, Hyeoung-Won ; et al.	2005-09-22
Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the same App 20050199930 - Seo, Hyeoung-Won ; et al.	2005-09-15
Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the same App 20050194597 - Seo, Hyeoung-Won ; et al.	2005-09-08
Recess type MOS transistor and method of manufacturing same App 20050196947 - Seo, Hyeoung-Won ; et al.	2005-09-08
Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same App 20050191813 - Seo, Hyeoung-Won ; et al.	2005-09-01
Field effect transistor device with channel fin structure and method of fabricating the same App 20050179030 - Seo, Hyeoung-Won ; et al.	2005-08-18
Recessed-type field effect transistor with reduced body effect App 20050173744 - Kim, Dong-Hyun ; et al.	2005-08-11
Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growth App 20050151274 - Song, Du-Heon	2005-07-14
Asymmetric MOS transistor with trench-type gate App 20050133836 - Seo, Hyeoung-Won ; et al.	2005-06-23
Semiconductor memory device and fabrication method thereof using damascene bitline process Grant 6,861,313 - Song March 1, 2	2005-03-01
Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growth Grant 6,844,233 - Song January 18, 2	2005-01-18
Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growth App 20040007731 - Song, Du-Heon	2004-01-15
Semiconductor memory device and fabrication method thereof using damascene bitline process App 20040007727 - Song, Du-Heon	2004-01-15
Method for forming oxide film in semiconductor device Grant 6,191,049 - Song February 20, 2	2001-02-20
Fabrication method for semiconductor memory device Grant 6,090,692 - Song July 18, 2	2000-07-18
Method of fabricating semiconductor device Grant 5,942,450 - Song August 24, 1	1999-08-24
Fabrication method for semiconductor device Grant 5,686,331 - Song November 11, 1	1997-11-11

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