U.S. patent application number 11/707027 was filed with the patent office on 2007-11-29 for exposure apparatus, exposure method, and method for producing device.
This patent application is currently assigned to NIKON CORPORATION. Invention is credited to Hiroyuki Nagasaka.
Application Number | 20070273854 11/707027 |
Document ID | / |
Family ID | 38371586 |
Filed Date | 2007-11-29 |
United States Patent
Application |
20070273854 |
Kind Code |
A1 |
Nagasaka; Hiroyuki |
November 29, 2007 |
Exposure apparatus, exposure method, and method for producing
device
Abstract
An exposure apparatus includes a projection optical system which
forms an image of a first pattern in a first exposure area and
which forms an image of a second pattern in a second exposure area;
and an adjusting device which adjusts a surface positional
relationship between a surface of the substrate and a first image
plane for forming the image of the first pattern thereon and which
adjusts a surface positional relationship between the surface of
the substrate and a second image plane for forming the image of the
second pattern thereon when a shot area on the substrate is
subjected to multiple exposure with the image of the first pattern
and the image of the second pattern via the projection optical
system. The substrate can be subjected to the multiple exposure
satisfactorily and efficiently.
Inventors: |
Nagasaka; Hiroyuki;
(Kumagaya-shi, JP) |
Correspondence
Address: |
OLIFF & BERRIDGE, PLC
P.O. BOX 19928
ALEXANDRIA
VA
22320
US
|
Assignee: |
NIKON CORPORATION
TOKYO
JP
|
Family ID: |
38371586 |
Appl. No.: |
11/707027 |
Filed: |
February 16, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
60779436 |
Mar 7, 2006 |
|
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|
Current U.S.
Class: |
355/46 |
Current CPC
Class: |
G03F 7/70275 20130101;
G03F 9/7026 20130101; G03F 7/70283 20130101; G03F 9/7088 20130101;
G03F 7/70208 20130101 |
Class at
Publication: |
355/046 |
International
Class: |
G03F 9/00 20060101
G03F009/00 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 16, 2006 |
JP |
2006-039227 |
Claims
1. An exposure apparatus which exposes a substrate, comprising: an
optical system which forms an image of a first pattern in a first
exposure area and which forms an image of a second pattern in a
second exposure area, the second pattern being different from the
first pattern; and an adjusting device which adjusts a surface
positional relationship between a surface of the substrate and a
first image plane for forming the image of the first pattern
thereon and which adjusts a surface positional relationship between
the surface of the substrate and a second image plane for forming
the image of the second pattern thereon when a predetermined area
on the substrate is subjected to multiple exposure with the image
of the first pattern and the image of the second pattern via the
optical system.
2. The exposure apparatus according to claim 1, wherein the
adjusting device adjusts at least one of positions of the first
pattern and the second pattern to adjust at least one of positions
of the first image plane and the second image plane.
3. The exposure apparatus according to claim 1, wherein the
adjusting device adjusts the optical system to adjust at least one
of positions of the first image plane and the second image
plane.
4. The exposure apparatus according to claim 3, wherein the
adjustment of at least one of the positions of the first image
plane and the second image plane includes adjustment of at least
one of inclinations of the first image plane and the second image
plane.
5. The exposure apparatus according to claim 1, wherein the
adjusting device adjusts a position of the substrate, and the
adjustment of the position includes adjustment of an inclination of
the substrate.
6. The exposure apparatus according to claim 1, wherein the
adjusting device adjusts the surface positional relationship
between the surface of the substrate and the first image plane and
the surface positional relationship between the surface of the
substrate and the second image plane, based on a surface
information about the substrate.
7. The exposure apparatus according to claim 6, further comprising
a surface detecting system which is capable of obtaining the
surface information about the substrate, wherein the adjusting
device adjusts the surface positional relationship between the
surface of the substrate and each of the first and second image
planes based on a detection result of the surface detecting
system.
8. The exposure apparatus according to claim 7, wherein the surface
detecting system obtains the surface information about the
substrate concurrently with the multiple exposure operation
performed for the predetermined area.
9. The exposure apparatus according to claim 7, wherein the surface
detecting system is arranged away from the optical system, and
obtains the surface information about the substrate before the
exposure operation for the substrate is started.
10. The exposure apparatus according to claim 1, wherein the
adjusting device adjusts the surface positional relationship
between the surface of the substrate and the first image plane in
the first exposure area only by positional adjustment of the first
image plane, and the adjusting device adjusts the surface
positional relationship between the surface of the substrate and
the second image plane in the second exposure area only by
positional adjustment of the substrate.
11. The exposure apparatus according to claim 1, wherein the
adjusting device adjusts the surface positional relationship
between the surface of the substrate and the first image plane in
the first exposure area and adjusts the surface positional
relationship between the surface of the substrate and the second
image plane in the second exposure area only by positional
adjustment of the substrate, without performing positional
adjustment of the first image plane and the second image plane.
12. The exposure apparatus according to claim 11, wherein the
adjusting device performs the positional adjustment of the
substrate to match the first image plane in the first exposure area
to an exposure surface on the substrate.
13. The exposure apparatus according to claim 11, wherein the
adjusting device performs the positional adjustment of the
substrate to make an error between an exposure surface on the
substrate and the first image plane in the first exposure area to
be substantially same as an error between the exposure surface on
the substrate and the second image plane in the second exposure
area.
14. The exposure apparatus according to claim 1, wherein the
adjusting device performs positional adjustment of each of the
surface of the substrate, the first image plane and the second
image plane to match the first image plane in the first exposure
area to an exposure surface on the substrate, and to match the
second image plane in the second exposure area to the exposure
surface on the substrate.
15. The exposure apparatus according to claim 14, wherein the
adjusting device performs the positional adjustment of the
substrate to make an amount of positional adjustment of the first
image plane to be substantially equal to an amount of positional
adjustment of the second image plane.
16. The exposure apparatus according to claim 1, wherein the
adjusting device adjusts the surface positional relationship
between the surface of the substrate and the first image plane in
the first exposure area and adjusts the surface positional
relationship between the surface of the substrate and the second
image plane in the second exposure area only by positional
adjustment of the first image plane and the second image plane,
without performing positional adjustment of the substrate.
17. The exposure apparatus according to claim 1, wherein the
adjusting device moves at least one of the first image plane, the
second image plane, and the substrate to dispose the first image
plane and the surface of the substrate in a predetermined
positional relationship in the first exposure area, and to dispose
the second image plane and the surface of the substrate in a
predetermined positional relationship in the second exposure
area.
18. The exposure apparatus according to claim 1, wherein the
adjusting device adjusts the surface positional relationship during
the multiple exposure for the predetermined area.
19. The exposure apparatus according to claim 1, wherein the
substrate is moved in a scanning direction with respect to the
first exposure area and the second exposure area to make the
predetermined area on the substrate pass across the first exposure
area and the second exposure area during the multiple exposure for
the predetermined area on the substrate.
20. The exposure apparatus according to claim 19, wherein the first
pattern and the second pattern are moved in scanning directions
respectively during the multiple exposure for the predetermined
area on the substrate.
21. The exposure apparatus according to claim 20, further
comprising: a mask stage which is capable of moving a first mask
having the first pattern and a second mask having the second
pattern in the scanning directions respectively; and a substrate
stage which is capable of moving the predetermined area on the
substrate in the scanning direction with respect to the first
exposure area and the second exposure area, wherein the mask stage
and the substrate stage are controlled to move the first mask and
the second mask in synchronization with movement of the
substrate.
22. The exposure apparatus according to claim 21, wherein the mask
stage has a main stage which is capable of moving the first mask
and the second mask in substantially same scanning directions while
holding the first mask and the second mask.
23. The exposure apparatus according to claim 22, wherein the mask
stage has a first driving device which is capable of moving the
first mask with respect to the main stage and a second driving
device which is capable of moving the second mask with respect to
the main stage.
24. The exposure apparatus according to claim 23, wherein the
adjusting device adjusts at least one of positions of the first and
second image planes by moving at least one of the first and second
masks with the first and second driving devices.
25. The exposure apparatus according to claim 21, further
comprising a first measuring system which is capable of measuring
position information about the first mask and position information
about the second mask.
26. The exposure apparatus according to claim 1, wherein the
optical system has one optical element which is arranged to
opposite to the substrate, and the image of the first pattern and
the image of the second pattern are formed in the first exposure
area and the second exposure area respectively via the one optical
element.
27. The exposure apparatus according to claim 1, wherein the first
exposure area and the second exposure area are set at different
positions.
28. The exposure apparatus according to claim 27, wherein the
optical system has a first reflecting surface which is arranged in
the vicinity of a position optically conjugate with the first
exposure area and the second exposure area; a second reflecting
surface which is arranged in the vicinity of a position optically
conjugate with the first exposure area and the second exposure
area; a first optical system which guides an exposure light beam
from the first pattern to the first reflecting surface; a second
optical system which guides an exposure light beam from the second
pattern to the second reflecting surface; and a third optical
system which guides the exposure light beam from the first
reflecting surface and the exposure light beam from the second
reflecting surface to the first exposure area and the second
exposure area respectively.
29. The exposure apparatus according to claim 1, further comprising
a second measuring system which measures a position of the first
image plane and a position of the second image plane.
30. The exposure apparatus according to claim 29, wherein the
second measuring system has a light-receiving section arrangeable
in each of the first exposure area and the second exposure
area.
31. The exposure apparatus according to claim 1, wherein a liquid
immersion area of a liquid is formed on the substrate, and an
exposure light beam from the first pattern and an exposure light
beam from the second pattern are radiated onto the predetermined
area on the substrate through the liquid of the liquid immersion
area.
32. The exposure apparatus according to claim 1, wherein the
substrate is a wafer.
33. An exposure apparatus which exposes a substrate, comprising: an
optical system which forms an image of a first pattern in a first
exposure area and which forms an image of a second pattern in a
second exposure area, the second pattern being different from the
first pattern; and a detecting system which detects position
information about a first image plane for forming the image of the
first pattern thereon and which detects position information about
a second image plane for forming the image of the second pattern
thereon; wherein a predetermined area on the substrate is subjected
to multiple exposure with the image of the first pattern and the
image of the second pattern based on a detection result of the
detecting system.
34. The exposure apparatus according to claim 33, wherein the
detecting system detects surface information about the
substrate.
35. The exposure apparatus according to claim 34, further
comprising an adjusting device which adjusts at least one of
positions of the first image plane, the second image plane, and a
surface of the substrate based on the detection result of the
detecting system.
36. The exposure apparatus according to claim 35, further
comprising a mask stage which is capable of moving a first mask
having the first pattern and a second mask having the second
pattern in a predetermined direction; and a substrate stage which
is capable of moving the substrate in a predetermined direction
with respect to the first exposure area and the second exposure
area; wherein the first and second masks and the substrate are
synchronously moved by the mask stage and the substrate stage
respectively during the multiple exposure.
37. The exposure apparatus according to claim 36, wherein the
adjusting device is capable of adjusting the positions of the first
and second image planes and a position of the substrate
respectively.
38. The exposure apparatus according to claim 36, further
comprising a controller which controls the adjusting device to
dispose the first and second image planes and the surface of the
substrate in a predetermined positional relationship during the
multiple exposure.
39. The exposure apparatus according to claim 38, wherein the
controller previously determines movement profiles of surface
positions of the first mask, the second mask, and the substrate
during the multiple exposure.
40. The exposure apparatus according to claim 35, further
comprising a first mask stage which is capable of moving a first
mask having the first pattern in a predetermined direction; a
second mask stage which is capable of moving a second mask having
the second pattern in a predetermined direction; and a substrate
stage which is capable of moving the substrate in a predetermined
direction with respect to the first exposure area and the second
exposure area; wherein the first mask and the substrate are
synchronously moved and the second mask and the substrate are
synchronously moved by the first and second mask stages and the
substrate stage during the multiple exposure.
41. The exposure apparatus according to claim 33, wherein a liquid
immersion area of a liquid is formed on the substrate, and an
exposure light beam from the first pattern and an exposure light
beam from the second pattern are radiated onto the predetermined
area on the substrate through the liquid of the liquid immersion
area.
42. A method for producing a device, comprising using the exposure
apparatus as defined in claim 1.
43. An exposure method for performing multiple exposure for a
predetermined area on a substrate with an image of a first pattern
and an image of a second pattern, the exposure method comprising:
adjusting surface positional relationship between a surface of the
substrate and a first image plane on which the image of the first
pattern is to be formed; adjusting surface positional relationship
between the surface of the substrate and a second image plane on
which the image of the second pattern is to be formed; and forming
the image of the first pattern and the image of the second pattern
in a first exposure area and a second exposure area respectively to
perform the multiple exposure for the predetermined area on the
substrate with the image of the first pattern and the image of the
second pattern.
44. The exposure method according to claim 43, wherein the multiple
exposure is performed for the predetermined area on the substrate
with the image of the first pattern and the image of the second
pattern while synchronously moving the substrate, a first mask on
which the first pattern is formed and a second mask on which the
second pattern is formed.
45. The exposure method according to claim 44, wherein the
predetermined area on the substrate is subjected to the multiple
exposure with the image of the first pattern and the image of the
second pattern by synchronously moving the first and second masks
and the substrate for one time.
46. The exposure method according to claim 43, wherein the
substrate is moved in a scanning direction relative to the first
and second exposure areas during the multiple exposure; and the
first and second exposure areas are located at mutually different
positions in the scanning direction.
47. The exposure method according to claim 43, further comprising
adjusting a surface positional relationship between the first image
plane and the second image plane.
48. The exposure method according to claim 43, wherein a liquid
immersion area of a liquid is formed on the substrate, and an
exposure light beam from the first pattern and an exposure light
beam from the second pattern are radiated onto the predetermined
area on the substrate through the liquid of the liquid immersion
area.
49. An exposure method for performing multiple exposure for a
predetermined area on a substrate with an image of a first pattern
and an image of a second pattern, the exposure method comprising:
detecting position information about a first image plane on which
the image of the first pattern is to be formed; detecting position
information about a second image plane on which the image of the
second pattern is to be formed; and forming the image of the first
pattern and the image of the second pattern in a first exposure
area and a second exposure area respectively to perform the
multiple exposure for the predetermined area on the substrate with
the image of the first pattern and the image of the second pattern
based on the detected position informations.
50. The exposure method according to claim 49, further comprising
detecting surface information about the substrate.
51. The exposure method according to claim 49, further comprising
adjusting at least one of positions of the first image plane, the
second image plane, and a surface of the substrate.
52. The exposure method according to claim 49, wherein the
substrate is moved in a scanning direction relative to the first
and second exposure areas during the multiple exposure; and the
first and second exposure areas are located at mutually different
positions in the scanning direction.
53. The exposure method according to claim 49, further comprising
synchronously moving the first and second patterns and the
substrate during the multiple exposure.
54. The exposure method according to claim 52, further comprising
previously determining movement profiles of surface positions of
the first mask, the second mask, and the substrate during the
multiple exposure.
55. The exposure method according to claim 49, wherein a liquid
immersion area of a liquid is formed on the substrate, and an
exposure light beam from the first pattern and an exposure light
beam from the second pattern are radiated onto the predetermined
area on the substrate through the liquid of the liquid immersion
area.
56. A method for producing a device, comprising: performing
multiple exposure for a substrate by using the exposure method as
defined in claim 43; developing the exposed substrate; and
processing the developed substrate.
57. A method for producing a device, comprising using the exposure
apparatus as defined in claim 33.
58. A method for producing a device, comprising: performing
multiple exposure for a substrate by using the exposure method as
defined in claim 49; developing the exposed substrate; and
processing the developed substrate.
Description
CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] This application claims the benefit of priority of Japanese
Patent Application No. 2006-039227 filed on Feb. 16, 2006 and U.S.
Provisional Application No. 60/779,436 filed on Mar. 7, 2006, the
entire disclosures of which are incorporated herein by
reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to an exposure apparatus for
exposing a substrate, an exposure method, and a method for
producing a device.
[0004] 2. Description of the Related Art
[0005] An exposure apparatus, which performs the multiple exposure
for the substrate, is known as disclosed, for example, in Japanese
Patent Application Laid-open No. 10-214783 in relation to the
exposure apparatus to be used in the photolithography steps.
[0006] In the multiple exposure, a plurality of masks are prepared
to execute the exposure for each of the masks in some cases, and a
plurality of illumination conditions are prepared to execute the
exposure under the different illumination conditions for the
respective masks in other cases. In such situations, it is
necessary to take a period of time in which the mask is exchanged
and/or a period of time in which the illumination condition or the
like is changed. Therefore, there is such a possibility that the
rate of operation of the exposure apparatus may be lowered, and
thus the throughput may be lowered.
[0007] When the substrate is subjected to the multiple exposure by
using patterns of a plurality of masks, it is also important to
satisfactorily adjust the positional relationship between a surface
of the substrate and the image plane on which the image of each of
the patterns is to be formed, in order to form a desired pattern on
the substrate.
SUMMARY OF THE INVENTION
[0008] The present invention has been made taking the foregoing
situations into consideration, an object of which is to provide an
exposure apparatus, an exposure method, and a method for producing
a device, in which the substrate can be subjected to the multiple
exposure satisfactorily and efficiently.
[0009] In order to achieve the object as described above, the
present invention adopts the following constructions corresponding
to respective drawings as illustrated in embodiments.
[0010] According to a first aspect of the present invention, there
is provided an exposure apparatus which exposes a substrate,
comprising an optical system which forms an image of a first
pattern in a first exposure area and which forms an image of a
second pattern in a second exposure area, the second pattern being
different from the first pattern; and an adjusting device which
adjusts a surface positional relationship between a surface of the
substrate and a first image plane for forming the image of the
first pattern thereon and which adjusts a surface positional
relationship between the surface of the substrate and a second
image plane for forming the image of the second pattern thereon
when a predetermined area on the substrate is subjected to multiple
exposure with the image of the first pattern and the image of the
second pattern via the optical system.
[0011] According to the first aspect of the present invention, it
is possible to adjust the surface positional relationship between
the surface of the substrate and each of the first image plane on
which the image of the first pattern is to be formed and the second
image plane on which the image of the second pattern is to be
formed. Thus, the substrate can be subjected to the multiple
exposure satisfactorily and efficiently.
[0012] According to a second aspect of the present invention, there
is provided an exposure apparatus which exposes a substrate,
comprising an optical system which forms an image of a first
pattern in a first exposure area and which forms an image of a
second pattern in a second exposure area, the second pattern being
different from the first pattern; and a detecting system which
detects position information about a first image plane for forming
the image of the first pattern thereon and which detects position
information about a second image plane for forming the image of the
second pattern thereon; wherein a predetermined area on the
substrate is subjected to multiple exposure with the image of the
first pattern and the image of the second pattern based on a
detection result of the detecting system.
[0013] According to the second aspect of the present invention, the
substrate can be subjected to the multiple exposure satisfactorily
and efficiently based on the detection result, because the exposure
apparatus is provided with the detecting system which detects the
position information about the first image plane and the second
image plane.
[0014] According to a third aspect of the present invention, there
is provided a method for producing a device, comprising using the
exposure apparatus as defined in the first or second aspect.
[0015] According to the third aspect of the present invention, it
is possible to produce the device by using the exposure apparatus
which makes it possible to perform the multiple exposure for the
substrate satisfactorily and efficiently.
[0016] According to a fourth aspect of the present invention, there
is provided an exposure method for performing multiple exposure for
a predetermined area on a substrate with an image of a first
pattern and an image of a second pattern, the exposure method
comprising: adjusting surface positional relationship between a
surface of the substrate and a first image plane on which the image
of the first pattern is to be formed; adjusting surface positional
relationship between the surface of the substrate and a second
image plane on which the image of the second pattern is to be
formed; and forming the image of the first pattern and the image of
the second pattern in a first exposure area and a second exposure
area respectively to perform the multiple exposure for the
predetermined area on the substrate with the image of the first
pattern and the image of the second pattern.
[0017] According to the fourth aspect of the present invention, the
surface positional relationship between the first image plane and
the surface of the substrate is adjusted, and the surface
positional relationship between the second image plane and the
surface of the substrate is adjusted. Therefore, the substrate can
be subjected to the multiple exposure satisfactorily and
efficiently.
[0018] According to a fifth aspect of the present invention, there
is provided an exposure method for performing multiple exposure for
a predetermined area on a substrate with an image of a first
pattern and an image of a second pattern, the exposure method
comprising: detecting position information about a first image
plane on which the image of the first pattern is to be formed;
detecting position information about a second image plane on which
the image of the second pattern is to be formed; and forming the
image of the first pattern and the image of the second pattern in a
first exposure area and a second exposure area respectively to
perform the multiple exposure for the predetermined area on the
substrate with the image of the first pattern and the image of the
second pattern based on the detected position informations.
[0019] According to the fifth aspect of the present invention, the
substrate can be subjected to the multiple exposure satisfactorily
and efficiently, because the position informations about the first
image plane and the second image plane are detected.
[0020] According to a sixth aspect of the present invention, there
is provided a method for producing a device, comprising: performing
multiple exposure for a substrate by using the exposure method as
defined in the fourth or fifth aspect; developing the exposed
substrate; and processing the developed substrate. It is possible
to produce the highly accurate device highly efficiently by the
method for producing the device.
[0021] According to the present invention, the substrate can be
subjected to the multiple exposure satisfactorily with the image of
the first pattern and the image of the second pattern. Further, the
substrate can be subjected to the multiple exposure efficiently.
Therefore, the device having the desired performance can be
produced at the satisfactory productivity.
BRIEF DESCRIPTION OF THE DRAWINGS
[0022] FIG. 1 shows a schematic arrangement view illustrating an
exposure apparatus according to a first embodiment.
[0023] FIG. 2 shows a perspective view illustrating an exemplary
mask stage.
[0024] FIG. 3 shows a sectional view taken along a line III-III as
indicated by arrows shown in FIG. 2.
[0025] FIG. 4 shows a view illustrating an exemplary projection
optical system.
[0026] FIG. 5 schematically shows a relationship between first and
second masks and first and second illumination areas.
[0027] FIG. 6 schematically shows a relationship between a shot
area of a substrate and first and second exposure areas according
to the first embodiment.
[0028] FIG. 7 shows a plan view illustrating a substrate stage and
a measuring stage as viewed from a position thereabove.
[0029] FIG. 8 illustrates a spatial image-measuring instrument.
[0030] FIGS. 9A and 9B schematically illustrate the operation of
the spatial image-measuring instrument.
[0031] FIG. 10 schematically illustrates the positional
relationship between the pattern formation surface and the image
plane.
[0032] FIG. 11 shows a flow chart illustrating an exposure method
according to the first embodiment.
[0033] FIG. 12 schematically illustrates the operation of the
exposure apparatus according to the first embodiment.
[0034] FIGS. 13A and 13B illustrate an exemplary method for
adjusting the surface positional relationship between the first and
second image planes and the surface of the substrate according to
the first embodiment.
[0035] FIG. 14 schematically illustrates the operation of the
exposure apparatus according to the first embodiment.
[0036] FIGS. 15A and 15B schematically show an exemplary
relationship between the movement loci of the surface of the
substrate and a first substage and the movement locus of a
substrate table.
[0037] FIGS. 16A and 16B illustrate an exemplary method for
adjusting the surface positional relationship between the first and
second image planes and the surface of the substrate according to a
second embodiment.
[0038] FIGS. 17A and 17B illustrate an exemplary method for
adjusting the surface positional relationship between the first and
second image planes and the surface of the substrate according to a
third embodiment.
[0039] FIGS. 18A and 18B illustrate an exemplary method for
adjusting the surface positional relationship between the first and
second image planes and the surface of the substrate according to a
fourth embodiment.
[0040] FIG. 19 illustrates an exemplary method for adjusting the
surface positional relationship between the first and second image
planes and the surface of the substrate according to a fifth
embodiment.
[0041] FIG. 20 shows an exposure apparatus according to a sixth
embodiment.
[0042] FIG. 21 schematically shows the relationship between the
first and second exposure areas and radiation positions of a
detecting light beam of a focus/leveling-detecting system according
to the sixth embodiment.
[0043] FIG. 22 shows an exposure apparatus according to a seventh
embodiment.
[0044] FIG. 23 schematically shows the relationship between a shot
area of the substrate and the first and second exposure areas
according to the seventh embodiment.
[0045] FIG. 24 shows an exposure apparatus according to an eighth
embodiment.
[0046] FIG. 25 shows an exposure apparatus according to a ninth
embodiment.
[0047] FIG. 26 schematically illustrates an exemplary operation of
the exposure apparatus according to the ninth embodiment.
[0048] FIGS. 27A and 27B schematically show exemplary
substrates.
[0049] FIG. 28 shows a flow chart illustrating exemplary steps of
producing a microdevice.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0050] Embodiments of the present invention will be explained below
with reference to the drawings. However, the present invention is
not limited to the embodiments. In the following description, the
XYZ rectangular coordinates system is defined. The positional
relationship concerning respective members will be explained with
reference to the XYZ rectangular coordinates system. An X axis
direction is a predetermined direction in a horizontal plane. A Y
axis direction is a direction which is perpendicular to the X axis
direction in the horizontal plane. A Z axis direction is a
direction which is perpendicular to the X axis direction and the Y
axis direction (i.e., the vertical direction). The directions of
rotation (inclination) about the X axis, the Y axis, and the Z axis
are designated as the .theta.X, .theta.Y, and .theta.Z directions
respectively.
First Embodiment
[0051] A first embodiment will be explained. FIG. 1 shows a
schematic arrangement view illustrating an exposure apparatus EX
according to the first embodiment. With reference to FIG. 1, the
exposure apparatus EX includes a mask stage 60 which is movable
while holding a first mask M1 having a first pattern PA1 and a
second mask M2 having a second pattern PA2; a substrate stage 80
which is movable while holding a substrate P; a measuring stage 90
which is movable with a measuring instrument or a measuring device
capable of executing the measurement in relation to the exposure
provided thereon; a measuring system 70 which is capable of
measuring a position information about each of the stages; a light
source device 1 which emits or irradiates an exposure light beam
EL; an illumination system IL which splits the exposure light beam
EL emitted from the light source device 1 into a first exposure
light beam EL1 and a second exposure light beam EL2, which
illuminates the first pattern PA1 of the first mask M1 with the
first exposure light beam EL1, and which illuminates the second
pattern PA2 of the second mask M2 with the second exposure light
beam EL2; a projection optical system PL which projects, onto the
substrate P, an image of the first pattern PA1 illuminated with the
first exposure light beam EL1 and an image of the second pattern
PA2 illuminated with the second exposure light beam EL2; a
controller 30 which controls the operation of the entire exposure
apparatus EX; and a memory 31 which is connected to the controller
30 and which is capable of storing various pieces of information in
relation to the exposure. The substrate stage 80 and the measuring
stage 90 are movable independently from each other respectively on
a base member BP on the light-exit side of the projection optical
system PL, i.e., on the side of the image plane of the projection
optical system PL.
[0052] The substrate referred to herein includes those in which a
photosensitive material (photoresist) is coated on a base material
including, for example, a semiconductor wafer such as a silicon
wafer, and includes those obtained by coating or forming various
films such as a protective film (top coat film) in addition to the
photosensitive film. The mask includes a reticle on which a device
pattern to be subjected to the reduction projection onto the
substrate is formed. The mask has a transparent plate member such
as a glass plate and a light-shielding film such as chromium formed
thereon, and a predetermined pattern is formed by the
light-shielding film. Such a transmission type mask is not limited
to the binary mask on which the pattern is formed by the
light-shielding film. The mask also includes, for example, a phase
shift mask of, for example, the spatial frequency modulation type
or the half tone type. In this embodiment, the transmission type
mask is used as the mask. However, it is also allowable to use a
reflection type mask. In this embodiment, the first pattern PA1
formed on the first mask and the second pattern PA2 formed on the
second mask are different patterns. Further, the first and second
masks M1, M2 are of the same type, but they may differ in the type.
For example, one of the first and second masks M1, M2 may be a
binary mask, and the other may be a phase shift reticle.
[0053] The projection optical system PL is capable of setting a
first exposure area AR1 and a second exposure area AR2 in a
predetermined positional relationship on the side of the image
plane of the projection optical system PL. The projection optical
system PL is capable of forming the image of the first pattern PA1
in the first exposure area AR1, and the projection optical system
PL is capable of forming the image of the second pattern PA2 in the
second exposure area AR2. In the exposure apparatus EX of this
embodiment, the first exposure area AR1 and the second exposure
area AR2 are set, by the projection optical system PL, on the
substrate P arranged on the side of the image plane of the
projection optical system PL, the image of the first pattern PA1 is
formed in the first exposure area AR1, and the image of the second
pattern PA2 is formed in the second exposure area AR2. By doing so,
a shot area S on the substrate P is subjected to the multiple
exposure (double exposure) with the image of the first pattern PA1
and the image of the second pattern PA2. Specifically, the exposure
apparatus EX forms the image of the first pattern PA1 in the first
exposure area AR1 with the first exposure light beam EL1 which is
emitted from the illumination system IL and which is radiated onto
the first exposure area AR1 via the first pattern PA1 and the
projection optical system PL. Further, the exposure apparatus EX
forms the image of the second pattern PA2 in the second exposure
area AR2 with the second exposure light beam EL2 which is emitted
from the illumination system IL and which is radiated onto the
second exposure area AR2 via the second pattern PA2 and the
projection optical system PL. The exposure apparatus EX performs
the multiple exposure for the shot area S on the substrate P with
the image of the first pattern PA1 and the image of the second
pattern PA2 formed as described above. The shot area S on the
substrate P is subjected to the multiple exposure (double exposure)
by being irradiated with the first exposure light beam EL1 from the
first pattern PA1 and the second exposure light beam EL2 from the
second pattern PA2.
[0054] When the shot area S on the substrate P is subjected to the
multiple exposure with the image of the first pattern PA1 and the
image of the second pattern PA2, the exposure apparatus EX of this
embodiment adjusts the surface positional relationship among a
first image plane IS1 on which the image of the first pattern PA1
is to be formed, a second image plane IS2 on which the image of the
second pattern PA2 is to be formed, and the surface of the
substrate P.
[0055] As described later on, the exposure apparatus EX of this
embodiment is capable of adjusting, by using the mask stage 60, the
positions of the first and second patterns PA1, PA2, i.e., the
positions of a first pattern formation surface K1 on which a first
pattern PA1 of the first mask M1 is formed and a second pattern
formation surface K2 on which a second pattern PA2 of the second
mask M2 is formed. The exposure apparatus EX is capable of
adjusting the position of the first image plane IS1 (image of the
first pattern PA1) by adjusting the position of the first pattern
formation surface K1, and the exposure apparatus EX is capable of
adjusting the position of the second image plane IS2 (image of the
second pattern PA2) by adjusting the position of the second pattern
formation surface K2. The adjustment of the surface position of the
image plane (IS1, IS2) includes not only the adjustment of the
position of the image plane in the Z axis direction but also the
adjustment of the inclination of the image plane. The exposure
apparatus EX is capable of adjusting the position of the surface of
the substrate P by using the substrate stage 80. The adjustment of
the surface position of the surface of the substrate P includes not
only the adjustment of the position of the surface of the substrate
P in the Z axis direction but also the adjustment of the
inclination of the surface of the substrate P in the .theta.X and
.theta.Y directions. The exposure apparatus EX adjusts the surface
position relationship among the first image plane IS1 on which the
first pattern PA1 is to be formed, the second image plane IS2 on
which the second pattern PA2 is to be formed, and the surface of
the substrate P by adjusting at least one of the positions of the
first pattern formation surface K1, the second pattern formation
surface K2, and the surface of the substrate P by using the mask
stage 60 and the substrate stage 80. It is assumed that the
adjustment of the positions in the Z axis direction of the first
and second image planes IS1, IS2 (images of the first and second
patterns PA1, PA2) and the adjustment of the inclination in the
.theta.X and .theta.Y directions are performed by moving the first
and second masks M1, M2 in the Z axis direction, the .theta.X
direction, and the .theta.Y direction. However, the method for
adjusting the first and second image planes IS1, IS2 is not limited
to the movement of the first and second masks M1, M2. For example,
the first and second image planes IS1, IS2 may be adjusted, for
example, by the optical adjustment of the projection optical system
PL and/or the wavelength adjustment of the exposure light beam
(EL1, EL2).
[0056] The exposure apparatus EX of this embodiment is provided
with a focus/leveling-detecting system 130 which is capable of
obtaining the surface information about the substrate P. As shown
in FIG. 1, the focus/leveling-detecting system 130 of this
embodiment is arranged separately and away from the projection
optical system PL. The focus/leveling-detecting system 130 obtains
the surface information about the substrate P before the start of
the exposure operation for the substrate P. The surface information
about the substrate P herein includes the position information of
the surface of the substrate P and/or the shape information of the
surface of the substrate P. The position information about the
surface of the substrate P includes the position information of the
surface of the substrate P in relation to the Z axis direction and
the position (inclination) information in relation to the .theta.X
and .theta.Y directions. The shape information about the surface of
the substrate P includes the concave/convex or irregularity
information of the surface of the substrate P. The
focus/leveling-detecting system 130 outputs the obtained result to
the controller 30. The controller 30 adjusts the surface positional
relationship among the first image plane IS1, the second image
plane IS2, and the surface of the substrate P by adjusting at least
one of the positions of the first pattern formation surface K1, the
second pattern formation surface K2, and the surface of the
substrate P by using the mask stage 60 and/or the substrate stage
80 on the basis of the detection result of the
focus/leveling-detecting system 130. In this embodiment, a
multi-point position-detecting system, which detects the height
information about the substrate P (position information in relation
to the Z axis direction) at a plurality of detection points
respectively, may be used as the focus/leveling-detecting system
130 as disclosed, for example, in U.S. Pat. No. 6,608,681. For
example, it is preferable that the positions of the plurality of
detection points are different from each other in relation to a
predetermined direction, and the plurality of detection points are
arranged over a range approximately equivalent to the size
(diameter) of the substrate P. Accordingly, the surface information
about the substantially entire surface of the substrate P can be
obtained by merely moving the substrate P in a direction
intersecting the predetermined direction.
[0057] The exposure apparatus EX of this embodiment is the scanning
type exposure apparatus (so-called scanning stepper) in which the
image of the first pattern PA1 of the first mask M1 and the image
of the second pattern PA2 of the second mask M2 are projected onto
the substrate P while synchronously moving each of the first mask
M1 having the first pattern PA1, the second mask M1 having the
second pattern PA2, and the substrate P in the predetermined
scanning direction. In this embodiment, the scanning direction
(synchronous movement direction), in which each of the first mask
M1, the second mask M2, and the substrate P is subjected to the
scanning, is designated as the Y axis direction. The controller 30
controls the mask stage 60 and the substrate stage 80 so that the
movement of the first mask M1 and the second mask M2 in the Y axis
direction and the movement of the substrate P in the Y axis
direction are performed synchronously.
[0058] In the exposure apparatus EX of this embodiment, the shot
area S on the substrate P is subjected to the multiple exposure
with the image of the first pattern PA1 formed by the first
exposure light beam EL1 radiated onto the first exposure area AR1
and the image of the second pattern PA2 formed by the second
exposure light beam EL2 radiated onto the second exposure area AR2
by radiating the first exposure light beam EL1 and the second
exposure light beam EL2 onto the first exposure area AR1 and the
second exposure area AR2 respectively while relatively moving the
first exposure area AR1, the second exposure area AR2, and the shot
area S on the substrate P in the Y axis direction. The mask stage
60 is capable of moving, in the Y axis direction, the first mask M1
having the first pattern PA1 with respect to the first illumination
area IA1 onto which the first exposure light beam EL1 is radiated;
and the mask stage 60 is capable of moving, in the Y axis
direction, the second mask M2 having the second pattern PA2 with
respect to the second illumination area IA2 onto which the second
exposure light beam EL2 is radiated. The substrate stage 80 is
capable of moving, in the Y axis direction, the shot area S on the
substrate P with respect to the first exposure area AR1 and the
second exposure area AR2. The first mask M1 having the first
pattern PA1 and the second mask M2 having the second pattern PA2
are moved in the Y axis direction, and the substrate P is moved
also in the Y axis direction during the exposure for the shot area
S on the substrate P. The controller 30 performs the multiple
exposure (double exposure) for the shot area S on the substrate P
with the image of the first pattern PA1 and the image of the second
pattern PA2 while moving the shot area S on the substrate P in the
Y axis direction by using the substrate stage 80 with respect to
the first exposure area AR1 and the second exposure area AR2 in
synchronization with the movement of the first mask M1 and the
second mask M2 in the Y axis direction performed by the mask stage
60.
[0059] The light source device 1 emits the exposure light beam EL
for exposing the substrate P. Light beams usable as the exposure
light beam EL emitted from the light source device 1 include, for
example, emission lines (g-ray, h-ray, i-ray) radiated, for
example, from a mercury lamp; far ultraviolet light beams (DUV
light beams) such as the KrF excimer laser beam (wavelength: 248
nm), and vacuum ultraviolet light beams (VUV light beams) such as
the ArF excimer laser beam (wavelength: 193 nm) and the F.sub.2
laser beam (wavelength: 157 nm). In this embodiment, the ArF
excimer laser device is used as the light source device 1. The ArF
excimer laser light beam is used as the exposure light beam EL. In
this embodiment, the exposure apparatus EX is provided with one
light source device 1.
[0060] Next, the illumination system IL will be explained. The
illumination system IL of this embodiment splits the exposure light
beam (laser beam) EL emitted from the light source device 1 into
the first exposure light beam EL1 and the second exposure light
beam EL2 by using a splitting optical system. The illumination
system IL illuminates the first pattern PA1 of the first mask M1
with the first exposure light beam EL1; and further, the
illumination system IL illuminates the second pattern PA2 of the
second mask M2 with the second exposure light beam EL2. The
illumination system IL of this embodiment includes a predetermined
optical system which includes, for example, a beam expander, a
polarization state-switching optical system, a diffraction optical
element, an afocal optical system (non-focus optical system), a
zoom optical system, a polarization conversion element, an optical
integrator, a condenser optical system and the like as disclosed,
for example, in International Publication No. 2005/076045
(corresponding to United States Patent Application Publication No.
2006/0170901); a blind device (masking system) which includes a
fixed blind for defining the first illumination area IA1 brought
about by the first exposure light beam EL1 on the first mask M1 and
the second illumination area IA2 brought about by the second
exposure light beam EL2 on the second mask M2, and a movable blind
for avoiding any unnecessary exposure of the substrate P with the
first and second exposure light beams EL1, EL2; and the splitting
optical system which splits the exposure light beam EL into the
first exposure light beam EL1 and the second exposure light beam
EL2, the exposure light beam EL being emitted from the light source
device 1 and allowed to pass via the predetermined optical system
described above. The splitting optical system of this embodiment
includes a polarization splitting optical system (for example, a
polarization beam splitter) which splits the exposure light beam EL
into a first exposure light beam EL1 in a first polarization state
and a second exposure light beam EL2 in a second polarization
state. The exposure light beam EL, which is emitted from the light
source device 1, which is allowed to pass via, for example, the
predetermined optical system of the illumination system IL, and
which mainly contains a first polarization component and a second
polarization component, is split by the splitting optical system
into the first exposure light beam EL1 in the first polarization
state and the second exposure light beam EL2 in the second
polarization state. The illumination system IL illuminates the
first pattern PA1 of the first mask M1 with the first exposure
light beam EL1 in the first polarization state (for example, in the
S-polarization state) split by the splitting optical system by the
aid of the blind device, and the illumination system IL illuminates
the second pattern PA2 of the second mask M2 with the second
exposure light beam EL2 in the second polarization state (for
example, in the P-polarization state).
[0061] In this embodiment, the illumination system IL illuminates
the first and second patterns PA1, PA2 with the first and second
exposure light beams EL1, EL2 in the mutually different
polarization states. However, the first and second patterns PA1,
PA2 may be illuminated with the first and second exposure light
beams EL1, EL2 in a same polarization state. At least one of the
first and second exposure light beams EL1, EL2 may be in the random
polarization state (no polarization state). In this embodiment, the
exposure light beam EL, which is emitted from the single light
source device 1, is split by the illumination system IL into the
first and second exposure light beams EL1, EL2. However, for
example, it is also allowable to provide first and second light
source devices, a first illumination system which is optically
connected to the first light source device and which emits the
first exposure light beam EL1 for illuminating the first pattern
PA1 of the first mask M1 therewith, and a second illumination
system which is optically connected to the second light source
device and which emits the second exposure light beam EL2 for
illuminating the second pattern PA2 of the second mask M2
therewith. In this case, a part or parts of the first illumination
system and the second illumination system may be commonly used.
[0062] Next, the mask stage 60 will be explained. The mask stage 60
is capable of moving the first mask M1 having the first pattern PA1
in the Y axis direction with respect to the first exposure light
beam EL1, and the mask stage 60 is capable of moving the second
mask M2 having the second pattern PA2 in the Y axis direction with
respect to the second exposure light beam EL2. The position
information about each of the first mask M1 and the second mask M2
on the mask stage 60 is measured by the measuring system 70.
[0063] FIG. 2 shows a perspective view illustrating the mask stage
60 and the measuring system 70 according to this embodiment. The
mask stage 60 includes a main stage 61, a first substage 62 which
is movable on the main stage 61 while holding the first mask M1,
and a second substage 63 which is movable on the main stage 61
while holding the second mask M2.
[0064] The main stage 61 moves the first mask M1 and the second
mask M2 in the Y axis direction. The main stage 61 holds the first
mask M1 by the aid of the first substage 62, and the main stage 61
holds the second mask M2 by the aid of the second substage 63. The
main stage 61 is capable of moving the first and second masks M1,
M2 in the same scanning direction (Y axis direction) while holding
the first mask M1 and the second mask M2 by the aid of the first
substage 62 and the second substage 63, respectively.
[0065] The main stage 61 has a relatively large stroke in the Y
axis direction so that the entire first pattern PA1 of the first
mask M1 is allowed to pass across the first illumination area IA1
and the entire second pattern PA2 of the second mask M2 is allowed
to pass across the second illumination area IA2 during the scanning
exposure for one shot area S on the substrate P. The mask stage 60
is provided with a main stage-driving device 64 for moving the main
stage 61 in the Y axis direction. The main stage-driving device 64
includes, for example, an actuator such as a linear motor. In this
embodiment, the main stage-driving device 64 includes movers 64A
which are provided on the both sides of the main stage 61 in the X
axis direction, and stators 64B which are provided corresponding to
the movers 64A. The controller 30 is capable of moving the main
stage 61 in the Y axis direction by driving the main stage-driving
device 64. When the main stage 61 is moved in the Y axis direction,
the first and second substages 62, 63 are also moved in the Y axis
direction together with the main stage 61. Therefore, when the main
stage 61 is moved in the Y axis direction, the first and second
masks M1, M2, which are held by the first and second substages 62,
63, are also moved in the Y axis direction together with the main
stage 61.
[0066] The first substage 62 is provided to be finely movably in
the directions of six degrees of freedom of the X axis, Y axis, Z
axis, .theta.X, .theta.Y, and .theta.Z directions with respect to
the main stage 61. Similarly, the second substage 63 is also
provided to be finely movably in the directions of six degrees of
freedom of the X axis, Y axis, Z axis, .theta.X, .theta.Y, and
.theta.Z directions with respect to the main stage 61.
[0067] The mask stage 60 is provided with a first substage-driving
device 62 which is capable of moving the first substage 62 with
respect to the main stage 61, and a second substage-driving device
66 which is capable of moving the second substage 63 with respect
to the main stage 62. The first mask M1, which is held by the first
substage 62, is finely movable by the first substage-driving device
65 in the directions of six degrees of freedom of the X axis, Y
axis, Z axis, .theta.X, .theta.Y, and .theta.Z directions by moving
the first substage 62 with respect to the main stage 61. Similarly,
the second mask M2, which is held by the second substage 63, is
finely movable by the second substage-driving device 66 in the X
axis, Y axis, Z axis, .theta.X, .theta.Y, and .theta.Z directions
by moving the second substage 63 with respect to the main stage 61.
The controller 30 is capable of adjusting the positions, in
relation to the directions of six degrees of freedom, of the first
and second masks M1, M2 held by the first and second substages 62,
63 by controlling the first and second substage-driving devices 65,
66 to move the first and second substages 62, 63.
[0068] FIG. 3 shows a sectional view taken along a line III-III as
indicated by arrows shown in FIG. 2. With reference to FIG. 3, the
first pattern PA1 is formed on the lower surface of the first mask
M1. The lower surface of the first mask M1 is the first pattern
formation surface K1. The first pattern formation area SA1, which
is included in the lower surface of the first mask M1 and in which
the first pattern PA1 is formed, is covered with a pellicle PE. The
pellicle PE and the lower surface of the first mask M1 are
connected by a pellicle frame.
[0069] The first substage 62 has a table 62A which is provided on
the main stage 61, and a holder 62B which is provided on the table
62A and which holds the first mask M1. An opening 61K is formed for
the main stage 61. In this embodiment, a part of the table 62A is
arranged in the opening 61K. Openings 62AK, 62BK are formed for the
table 62A and the holder 62B respectively as well. The holder 62B
holds the first mask M1 at an area, of the lower surface thereof,
disposed outside the first pattern formation area SA1 so that the
first pattern formation area SA1 of the first mask M1 is arranged
inside the openings 62AK, 62BK. The first exposure light beam EL1,
which is emitted from the illumination system IL and which
illuminates the first pattern PA1 of the first mask M1, is allowed
to pass through the openings 62AK, 62BK to come into the projection
optical system PL without being shielded by the mask stage 60.
[0070] The table 62A is provided to be movable in the Z axis,
.theta.X, and .theta.Y directions with respect to the main stage
61. The holder 62B is provided to be movable in the X axis, Y axis,
and .theta.Z directions with respect to the table 62A. The first
substage-driving device 65 includes a Z driving mechanism 67 which
is provided between the main stage 61 and the table 62A and which
is capable of moving the table 62A in the Z axis, .theta.X, and
.theta.Y directions with respect to the main stage 61; and an XY
driving mechanism 68 which is provided between the table 62A and
the holder 62A and which is capable of moving the holder 62B in the
X axis, Y axis, and .theta.Z directions with respect to the table
62A. The Z driving mechanism 67 includes a plurality of (three)
actuators 67A, 67B, 67C including, for example, voice coil motors
(see FIG. 2). The controller 30 is capable of moving the table 62A
in the Z axis, .theta.X, and .theta.Y directions with respect to
the main stage 61 by adjusting driving amounts of the plurality of
actuators 67A, 67B, 67C of the Z driving mechanism 67 respectively.
The controller 30 is capable of adjusting the position of the first
mask M1 held by the holder 62B on the table 62A in relation to the
Z axis, .theta.X, and .theta.Y directions by controlling the Z
driving mechanism 67 to adjust the position of the table 62A in
relation to the Z axis, .theta.X, and .theta.Y directions. The XY
driving mechanism 68 includes a plurality of actuators including,
for example, voice coil motors. The controller 30 is capable of
moving the holder 62B in the X axis, Y axis, and .theta.Z
directions with respect to the table 62A by driving the XY driving
mechanism 68. The controller 30 is capable of adjusting the
position of the first mask M1 held by the holder 62B in relation to
the X axis, Y axis, and .theta.Z directions by controlling the XY
driving mechanism 68 to adjust the position of the holder 62B in
relation to the X axis, Y axis, and .theta.Z directions.
[0071] As described above, in this embodiment, the controller 30 is
capable of moving the first mask M1 in the directions of six
degrees of freedom of the X axis, Y axis, Z axis, .theta.X,
.theta.Y, and .theta.Z directions with respect to the main stage 61
by controlling the first substage-driving device 65 including the Z
driving mechanism 67 and the XY driving mechanism 68, and thus the
controller 30 is capable of adjusting the position of the first
mask M1 in the directions of six degrees of freedom of the X axis,
Y axis, Z axis, .theta.X, .theta.Y, and .theta.Z directions with
respect to the main stage 61.
[0072] The second substage 63 also has a table which is provided on
the main stage 61, and a holder which is provided on the table and
which holds the second mask M2 in the same manner as the first
substage 62. An opening 61K corresponding to the second substage 63
is formed for the main stage 61. The second substage-driving device
66 also includes a Z driving mechanism which is capable of moving
the table of the second substage 63 in the Z axis, .theta.X, and
.theta.Y directions with respect to the main stage 61, and an XY
driving mechanism which is capable of moving the holder in the X
axis, Y axis, and .theta.Z directions with respect to the table of
the second substage 63 in the same manner as the first
substage-driving device 65. The controller 30 is capable of moving
the second mask M2 in the directions of six degrees of freedom of
the X axis, Y axis, Z axis, .theta.X, .theta.Y, and .theta.Z
directions with respect to the main stage 61 by controlling the
second substage-driving device 66 including the Z driving mechanism
and the XY driving mechanism, and thus the controller 30 is capable
of adjusting the position of the second mask M2 in relation to the
directions of six degrees of freedom of the X axis, Y axis, Z axis,
.theta.X, .theta.Y, and .theta.Z directions with respect to the
main stage 61.
[0073] Next, the measuring system 70 will be explained. The
measuring system 70 is capable of measuring the position
information about the first mask M1 and the position information
about the second mask M2. With reference to FIG. 2, the measuring
system 70 includes a Z measuring device 70A which measures the
position information about the first mask M1 and the second mask M2
in relation to the Z axis, .theta.X, and .theta.Y directions with
respect to the main stage 61; and an XY measuring device 70B which
measures the position information about the first mask M1 on the
first substage 62 and the second mask M2 on the second substage 63
in relation to the X axis, Y axis, and .theta.Z directions by
measuring the position information about the main stage 61, the
first substage 62, and the second substage 62 in relation to the X
axis, Y axis, and .theta.Z directions. That is, the measuring
system 70 of this embodiment is capable of measuring the position
information about each of the first mask M1 and the second mask M2
in relation to the directions of six degrees of freedom of the X
axis, Y axis, Z axis, .theta.X, .theta.Y, and .theta.Z
directions.
[0074] The Z measuring device 70A includes a first mask measuring
device 171 which radiates a measuring beam onto the first mask M1
and which receives a reflected light beam thereof to optically
obtain the position information of the first mask M1 with respect
to the main stage 61, and a second mask measuring device 172 which
radiates a measuring beam onto the second mask M2 and which
receives a reflected light beam thereof to optically obtain the
position information of the second mask M2 with respect to the main
stage 61.
[0075] As shown in FIG. 3, the first mask measuring device 171
includes a laser interferometer 173 which radiates a measuring beam
onto the first mask M1 and which receives a reflected light beam of
the measuring beam radiated onto the first mask M1 to obtain the
position information about the first mask M1 on the basis of the
light-receiving result. The laser interferometer 173 of the first
mask measuring device 171 is supported by a support member 174. The
support member 174 is attached onto the main stage 61. That is, the
laser interferometer 173 of the first mask measuring device 171 is
attached onto the main stage 61 by the aid of the support member
174. The first mask measuring device 171 is provided so that the
radiation of the first exposure light beam EL1 onto the first mask
M1 is not inhibited or disturbed thereby.
[0076] The first mask measuring device 171 radiates the measuring
beam onto the area disposed outside the area, among the upper
surface of the first mask M1, onto which the first exposure light
beam EL1 is radiated. A reflective area 175 is formed in the area,
among the upper surface of the first mask M1, onto which the
measuring beam from the laser interferometer 173 is radiated in
order to satisfactorily reflect the radiated measuring beam. The
laser interferometer 173 of the first mask measuring device 171 is
capable of obtaining the position information about the upper
surface of the first mask M1 in relation to the Z axis direction by
radiating the measuring beam onto the reflective area 175 of the
upper surface of the first mask M1 from the position separated and
away from the first mask M1 and by receiving the reflected light
beam thereof. As shown in FIG. 2, the interferometer 173 is
provided for one first mask M1 as a plurality of (three) laser
interferometers 173, each of which is supported by a support member
174. The results of measurement performed by the plurality of
(three) laser interferometers 173 are outputted to the controller
30 respectively. The controller 30 is capable of obtaining the
position information about the first mask M1 in relation to the Z
axis, .theta.X, and .theta.Y directions with respect to the main
stage 61 on the basis of the results of measurement performed by
the plurality of laser interferometers 173 of the first mask
measuring device 171.
[0077] The second mask measuring device 172 also includes a laser
interferometer 173 which radiates a measuring beam onto a
reflective area 175 provided on the upper surface of the second
mask M2 and which receives a reflected light beam of the measuring
beam radiated onto the second mask M2 to obtain the position
information about the second mask M2 on the basis of the
light-receiving result in the same manner as the first mask
measuring device 171. The laser interferometer 173 is supported by
a support member 174 attached onto the main stage 61. The
interferometer 173 is provided for one second mask M2 as a
plurality of (three) laser interferometers 173 each of which is
supported by a support member 174. The controller 30 is capable of
obtaining the position information about the second mask M2 in
relation to the Z axis, .theta.X, and .theta.Y directions with
respect to the main stage 61 on the basis of the results of
measurement performed by the plurality of laser interferometers 173
of the second mask measuring device 172.
[0078] In this embodiment, the Z measuring device 70A receives the
measuring beams radiated from the laser interferometers 173 and
reflected by the reflective areas 175 provided on the upper
surfaces of the first and second masks M1, M2. However, the
reflective areas 175 may be provided on the lower surfaces rather
than providing the reflective areas 175 on the upper surfaces of
the first and second masks M1, M2; and the position information
about the first and second masks M1, M2 may be obtained on the
basis of reflected light beams of the measuring beams allowed to
pass through the first and second masks M1, M2 and reflected by the
reflective areas 175 provided on the lower surfaces of the first
and second masks M1, M2. Further, only a part of the laser
interferometers 173 may be supported by the support member 174.
[0079] As shown in FIG. 2, the XY measuring device 70B of the
measuring system 70 includes reflecting members 71 which are
provided on the main stage 61, reflecting members 72 which are
provided on the first substage 62, reflecting members 73 which are
provided on the second substage 63, and a laser interferometer 74
which radiates measuring beams onto reflecting surfaces of the
reflecting members 71, 72, 73 and which receives the reflected
light beams to obtain the position informations about the main
stage 61, the first substage 62, and the second substage 63
respectively. In this embodiment, a part (for example, the optical
system) of the laser interferometer 74 is arranged on the +Y side
of the mask stage 60. The reflecting member 71 includes, for
example, a corner cube mirror (retroreflector), and two pieces of
the reflecting member 71 are provided at predetermined positions on
the main stage 61 at which the measuring beams from the laser
interferometer 74 can be radiated. The reflecting member 72 also
includes, for example, a corner cube mirror, and two pieces of the
reflecting member 72 are provided at predetermined positions on the
first substage 62 at which the measuring beams from the laser
interferometer 74 can be radiated. The reflecting member 73 also
includes, for example, a corner cube mirror, and two pieces of the
reflecting member 73 are provided at predetermined positions on the
second substage 63 at which the measuring beams from the laser
interferometer 74 can be radiated. The measuring system 70 is
capable of measuring the position information in the Y axis
direction and the .theta.Z direction about each of the main stage
61, the first substage 62, and the second substage 63 by using the
laser interferometer 74 and the reflecting members 71, 72, 73.
Although not shown, the XY measuring device 70B of the measuring
system 70 is also provided with a laser interferometer and
reflecting members (reflecting surfaces) in order to measure the
position information in the X axis direction about the main stage
61, the first substage 62, and the second substage 63.
[0080] The XY measuring device 70B of the measuring system 70
measures the position informations of the main stage 61 in relation
to the X axis direction, the Y axis direction, and the .theta.Z
direction by using the laser interferometer 74 and the reflecting
members 71 provided on the main stage 61. The XY measuring device
70B of the measuring system 70 measures the position informations
of the first and second substages 62, 63 in relation to the X axis
direction, the Y axis direction, and the .theta.Z direction by
using the laser interferometer 74 and the reflecting members 72, 73
provided on the first and second substages 62, 63.
[0081] The controller 30 appropriately drives the main stage 61,
the first substage 62, and the second substage 63, on the basis of
the measurement result of the measuring system 70, by using the
main stage-driving device 64, the first substage-driving device 65,
and the second substage-driving device 66 to control the positions
of the first and second masks M1, M2 held by the first and second
substages 62, 63. The controller 30 moves at least one of the first
substage 62 and the second substage 63 with respect to the main
stage 61. Accordingly, the controller 30 is capable of adjusting
the relative positional relationship between the first mask M1 and
the second mask M2.
[0082] Next, the projection optical system PL will be explained
with reference to FIG. 4. The projection optical system PL
projects, at a predetermined projection magnification onto the
substrate P, the image of the first pattern PA1 of the first mask
M1 illuminated with the first exposure light beam EL1 and the image
of the second pattern PA2 of the second mask M2 illuminated with
the second exposure light beam EL2. The projection optical system
PL of this embodiment is a reduction system having its projection
magnification which is, for example, 1/4, 1/5, 1/8 or the like. The
projection optical system PL of this embodiment forms an inverted
image.
[0083] The projection optical system PL of this embodiment has a
plurality of optical elements including a final (last) optical
element FL which is arranged opposite to or facing a surface of the
substrate P and which is closest to the image plane of the
projection optical system PL. The projection optical system PL
radiates the first exposure light beam EL1 and the second exposure
light beam EL2 onto the first exposure area AR1 and the second
exposure area AR2 respectively via the final optical element FL to
form the image of the first pattern PA1 and the image of the second
pattern PA2.
[0084] The projection optical system PL includes a first reflecting
surface 40A which is arranged in the vicinity of a position
optically conjugate with the first exposure area AR1 and the second
exposure area AR2, a second reflecting surface 40B which is
arranged in the vicinity of the position optically conjugate with
the first exposure area AR1 and the second exposure area AR2, a
first optical system 41 which guides the first exposure light beam
EL1 from the first pattern PA1 to the first reflecting surface 40A,
a second optical system 42 which guides the second exposure light
beam EL2 from the second pattern PA2 to the second reflecting
surface 40B, and a third optical system 43 which includes the final
optical element FL and which guides the first exposure light beam
EL1 from the first reflecting surface 40A and the second exposure
light beam EL2 from the second reflecting surface 40B to the first
exposure area AR1 and the second exposure area AR2
respectively.
[0085] The first optical system 41 includes a plurality of lenses,
and a reflecting member 44 having a reflecting surface 44A which
reflects, toward the first reflecting surface 40A, the first
exposure light beam EL1 allowed to pass through the plurality of
lenses. The second optical system 42 includes a plurality of
lenses, and a reflecting member 45 having a reflecting surface 45A
which reflects, toward the second reflecting surface 40B, the
second exposure light beam EL2 allowed to pass through the
plurality of lenses.
[0086] In this embodiment, the first reflecting surface 40A and the
second reflecting surface 40B are provided on an intermediate
optical member 40 arranged at a predetermined position. In this
embodiment, the intermediate optical member 40 includes a
prism.
[0087] The first exposure light beam EL1 from the first pattern PA1
of the first mask M1 and the second exposure light beam EL2 from
the second pattern PA2 of the second mask M2 are guided by the
first optical system 41 and the second optical system 42 to the
first reflecting surface 40A and the second reflecting surface 40B
of the intermediate optical member 40 respectively. In this case,
the first and second exposure light beams EL1, EL2, which are
patterned by the first and second masks M1, M2, are intermediately
imaged respectively at first conjugate position CP1 and second
conjugate position CP2 as positions optically conjugate with the
first and second masks M1, M2 respectively, and then the first and
second exposure light beams EL1, EL2 are guided to the intermediate
optical member 40. The first exposure light beam EL1 from the first
pattern PA1 of the first mask M1 and the second exposure light beam
EL2 from the second pattern PA2 of the second mask M2 are reflected
by the intermediate optical member 40, and then are radiated onto
the first exposure area AR1 and the second exposure area AR2
respectively via the third optical system 43 which includes the
final optical element FL. As described above, the projection
optical system PL of this embodiment is capable of radiating the
first exposure light beam EL1 from the first pattern PA1 onto the
first exposure area AR1, and the projection optical system PL is
capable of radiating the second exposure light beam EL2 from the
second pattern PA2 onto the second exposure area AR2.
[0088] As shown in FIG. 1, the first optical system 41, the second
optical system 42, the third optical system 43, and the
intermediate optical member 40 of the projection optical system PL
are held by a barrel PK. The projection optical system PL of this
embodiment is provided with a first imaging
characteristic-adjusting device LC1 and a second imaging
characteristic-adjusting device LC2 which are capable of adjusting
the imaging characteristics (imaging states) of the image of the
first pattern PA1 and the image of the second pattern PA2 brought
about by the projection optical system PL. Each of the first and
second imaging characteristic-adjusting devices LC1, LC2 includes
an optical element-driving mechanism which is capable of moving at
least one of the plurality of optical elements of the projection
optical system PL.
[0089] The first imaging characteristic-adjusting device LC1 is
capable of moving at least one specified or predetermined optical
element of the first optical system 41 in the Z axis direction
parallel to the optical axis of the first optical system 41 and the
directions (X axis and Y axis directions) perpendicular to the
optical axis. Further, the first imaging characteristic-adjusting
device LC1 is capable of inclining at least one predetermined
optical element of the first optical system 41 with respect to the
XY plane perpendicular to the optical axis (i.e., capable of
rotating the at least one predetermined optical element in the
.theta.X and .theta.Y directions). The first exposure light beam
EL1 from the first pattern PA1 is radiated onto the first exposure
area AR1 via the first optical system 41, the intermediate optical
member 40, and the third optical system 43. The first imaging
characteristic-adjusting device LC1 is capable of adjusting the
imaging characteristic of the image of the first pattern PA1 formed
with the first exposure light beam EL1 radiated onto the first
exposure area AR1 by driving the predetermined optical element of
the first optical system 41.
[0090] The second imaging characteristic-adjusting device LC2 is
capable of moving at least one predetermined optical element of the
second optical system 42 in the Z axis direction parallel to the
optical axis of the second optical system 42 and the X axis and Y
axis directions. Further, the second imaging
characteristic-adjusting device LC2 is capable of inclining at
least one predetermined optical element of the second optical
system 42 with respect to the XY plane perpendicular to the optical
axis (i.e., capable of rotating the at least one predetermined
optical element in the .theta.X and .theta.Y directions). The
second exposure light beam EL2 from the second pattern PA2 is
radiated onto the second exposure area AR2 via the second optical
system 42, the intermediate optical member 40, and the third
optical system 43. The second imaging characteristic-adjusting
device LC2 is capable of adjusting the imaging characteristic of
the image of the second pattern PA2 formed with the second exposure
light beam EL2 radiated onto the second exposure area AR2 by
driving the predetermined optical element of the second optical
system 42.
[0091] The first and second imaging characteristic-adjusting
devices LC1, LC2 are controlled by the controller 30. The
controller 30 drives the predetermined optical element of the
projection optical system PL (first and second optical systems 41,
42) by using the first and second imaging characteristic-adjusting
devices LC1, LC2. Accordingly, the controller 30 is capable of
adjusting the imaging characteristic of the projection optical
system PL including, for example, various aberrations (for example,
the distortion, the astigmatism, the spherical aberration, the wave
front aberration, and the like), the projection magnification, the
image plane position (focus position), and the like.
[0092] The controller 30 is also capable of performing the
positional adjustment (i.e., shift adjustment and/or rotation
adjustment) in the XY directions and/or the .theta.Z direction of
the images of the first and second patterns PA1, PA2 by using the
first and second imaging characteristic-adjusting devices LC1,
LC2.
[0093] That is, the controller 30 is capable of adjusting the
position of the first image plane IS1 on which the image of the
first pattern PA1 is to be formed, by using the first imaging
characteristic-adjusting device LC1; and the controller 30 is
capable of adjusting the position of the second image plane IS2 on
which the image of the second pattern PA2 is to be formed, by using
the second imaging characteristic-adjusting device LC2.
Specifically, the first imaging characteristic-adjusting device LC1
is capable of performing the positional adjustment in the Z axis
direction (focus direction) of the first image plane IS1 and the
positional adjustment (inclination adjustment) in the .theta.X and
.theta.Y directions (inclination directions of the first image
plane IS1). Similarly, the second imaging characteristic-adjusting
device LC2 is capable of performing the positional adjustment in
the Z axis direction of the second image plane IS2 and the
positional adjustment in the .theta.X and .theta.Y directions of
the second image plane IS2.
[0094] In this embodiment, at least one of the optical element of
each of the first and second optical systems 41, 42, which is moved
by one of the first and second imaging characteristic-adjusting
devices LC1, LC2, is a lens. However, the at least one optical
element may be any other optical element such as a plane-parallel,
a reflecting element or the like. In this embodiment, the two
imaging characteristic-adjusting devices (LC1, LC2) are provided.
However, it is also allowable that only one imaging
characteristic-adjusting device is provided. Alternatively, it is
also allowable that three or more imaging characteristic-adjusting
devices are provided. For example, it is also allowable to provide
an imaging characteristic-adjusting device which is capable of
moving at least one of the optical elements of the third optical
system 43 in the Z axis direction that is parallel to the optical
axis of the third optical system 43, and which is capable of
rotating at least one of the optical elements of the third optical
system 43 in the .theta.X and .theta.Y directions. In this
embodiment, the imaging characteristic-adjusting device moves the
optical element in the directions of five degrees of freedom (in
the X axis, Y axis, Z axis, .theta.X, and .theta.Y directions).
However, the direction of movement of the optical element is not
limited to the directions of five degrees of freedom. This
embodiment adopts the system in which the imaging
characteristic-adjusting device moves the optical element. However,
it is also allowable to use any other system in place of the
imaging characteristic-adjusting device or in combination
therewith. For example, a pressure-adjusting mechanism, which
adjusts the pressure of a gas retained in a space between parts of
the optical elements held in the barrel PK, may be used as the
first and second imaging characteristic-adjusting devices LC1,
LC2.
[0095] The exposure apparatus, which is provided with the imaging
characteristic-adjusting device capable of adjusting the imaging
characteristic of the image of the pattern brought about by the
projection optical system, is disclosed, for example, in Japanese
Patent Application Laid-open No. 60-78454 (corresponding to U.S.
Pat. No. 4,666,273), Japanese Patent Application Laid-open No.
11-195602 (corresponding to U.S. Pat. No. 6,235,438), and
International Publication No. 03/65428 (corresponding to United
States Patent Application Publication No. 2005/0206850). The
disclosures of, for example, U.S. Pat. Nos. 4,666,273 and
6,235,438, United States Patent Application Publication No.
2005/0206850 and the like described above are incorporated herein
by reference within a range of permission of the domestic laws and
ordinances of the designated or selected state.
[0096] Next, the substrate stage 80 will be explained. The
substrate stage 80 is movable while holding the substrate P in a
predetermined area including the first exposure area AR1 and the
second exposure area AR2 onto which the first exposure light beam
EL1 and the second exposure light beam EL2 are radiated
respectively. For example, the substrate stage 80 is capable of
moving the shot area S on the substrate P in the Y axis direction
with respect to the first exposure area AR1 and the second exposure
area AR2 during the scanning exposure.
[0097] As shown in FIG. 1, the substrate stage 80 includes a stage
body 80B, a substrate table 80T which is provided on the stage body
80B, and a substrate holder 80H which is provided on the substrate
table 80T and which holds the substrate P. The stage body 80B is
supported in a non-contact manner with respect to the upper surface
(guide surface) of the base member BP by air bearings 80A. The
exposure apparatus EX has a substrate stage-driving device 80D
which is capable of moving the substrate P held by the substrate
holder 80H. The substrate P can be moved in the directions of six
degrees of freedom of the X axis, Y axis, Z axis, .theta.X,
.theta.Y, and .theta.Z directions in accordance with the driving
operation of the substrate stage-driving device 80D.
[0098] The substrate stage-driving device 80D is provided with an
XY driving mechanism 81 which is capable of moving the stage body
80B in the X axis, Y axis, and .theta.Z directions on the base
member BP, and a Z driving mechanism 82 which is capable of moving
the substrate table 80T in the Z axis, .theta.X, and .theta.Y
directions with respect to the stage body 80B.
[0099] The XY driving mechanism 81 includes, for example, an
actuator such as a linear motor. The controller 30 is capable of
moving the stage body 80B in the X axis, Y axis, and .theta.Z
directions on the base member BP by controlling the XY driving
mechanism 81. The Z driving mechanism 82 includes three actuators
83A, 83B, 83C (actuator 83C provided on the back side of the sheet
surface of FIG. 1 is not shown) which are provided between the
stage body 80B and the substrate table 80T, and encoders 84A, 84B,
84C (encoder 84C provided on the back side of the sheet surface of
FIG. 1 is not shown) which measure the driving amount of the
substrate table 80T in the Z axis direction brought about by the
actuators 83A, 83B, 83C. The actuators 83A, 83B, 83C of the Z
driving mechanism 82 include, for example, voice coil motors or the
like. Linear encoders of, for example, the optical system or the
capacitance system may be used as the encoders 84A, 84B, 84C.
[0100] The controller 30 is capable of moving the substrate table
80T in the Z axis, .theta.X, and .theta.Y directions with respect
to the stage body 80B by adjusting the driving amounts of the
plurality of actuators 83A, 83B, 83C of the Z driving mechanism 82
respectively. The controller 30 is capable of adjusting the
position of the substrate P held by the substrate holder 80H of the
substrate table 80T in relation to the Z axis, .theta.X, and
.theta.Y directions by controlling the Z driving mechanism 82 to
adjust the position of the substrate table 80T in relation to the Z
axis, .theta.X, and .theta.Y directions. In addition, the
controller 30 is capable of moving the stage body 80B in the X
axis, Y axis, and .theta.Z directions by driving the XY driving
mechanism 81. The controller 30 is capable of adjusting the
position of the substrate P, held by the substrate holder 80H of
the substrate table 80T on the stage body 80B, in relation to the X
axis, Y axis, and .theta.Z directions by controlling the XY driving
mechanism 81 to adjust the position of the stage body 80B in
relation to the X axis, Y axis, and .theta.Z directions.
[0101] As described above, in this embodiment, the controller 30
controls the substrate stage-driving device 80D including the XY
driving mechanism 81 and the Z driving mechanism 82, to thereby
move the substrate P, which is held by the substrate holder 80H of
the substrate stage 80, in the directions of six degrees of freedom
of the X axis, Y axis, Z axis, .theta.X, .theta.Y, and .theta.Z
directions; and the controller 30 is capable of adjusting the
position of the substrate P in relation to the directions of six
degrees of freedom of the X axis, Y axis, Z axis, .theta.X,
.theta.Y, and .theta.Z directions.
[0102] The position information about the substrate table 80T of
the substrate stage 80 (as well as the substrate P) in relation to
the X axis, Y axis, and .theta.Z directions is measured by a laser
interferometer 75 of the measuring system 70. The laser
interferometer 75 measures the position information about the
substrate table 80T in relation to the X axis, Y axis, and .theta.Z
directions by using a reflecting surface 76 provided on the
substrate table 80T. The measuring system 70 may measure, for
example, the position information about the substrate table 80T in
relation to the Z axis, .theta.X, and .theta.Y directions by using
the laser interferometer 75.
[0103] The encoders 84A, 84B, 84C of the Z driving mechanism 82 are
capable of measuring the driving amounts in the Z axis direction at
the respective support points of the actuators 83A, 83B, 83C with
respect to the substrate table 80T. The measurement results are
outputted to the controller 30. The controller 30 can determine the
position of the substrate table 80T in relation to the Z axis,
.theta.X, and .theta.Y directions on the basis of the measurement
results of the encoders 84A, 84B, 84C.
[0104] The surface information about the substrate P held by the
substrate holder 80H of the substrate table 80T (including the
position information in relation to the Z axis, .theta.X, and
.theta.Y directions) is detected by the focus/leveling-detecting
system 130 before the exposure operation for the substrate P is
started. The controller 30 drives the substrate stage-driving
device 80D to control the position of the substrate P held by the
substrate holder 80H of the substrate table 80T on the basis of the
measurement results of the encoders 84A, 84B, 84C and the detection
result of the focus/leveling-detecting system 130.
[0105] Next, the measuring stage 90 will be explained. The
measuring stage 90 is movable while having thereon the measuring
instrument or the measuring device which performs the measurement
in relation to the exposure in a predetermined area including the
first exposure area AR1 and the second exposure area AR2 onto which
the first exposure light beam EL1 and the second exposure light
beam EL2 are radiated. The measuring instrument is exemplified by a
measuring instrument (measuring member) for measuring the state of
the exposure light beam EL and the imaging characteristic (optical
characteristic) of the projection optical system PL. The
measurement result with the measuring instrument is outputted to
the controller 30.
[0106] As shown in FIG. 1, the measuring stage 90 is provided with
a stage body 90B, and a measuring table 90T which is provided on
the stage body 90B. The measuring instrument is provided on the
measuring table 90T. The stage body 90B is supported in a
non-contact manner with respect to the upper surface (guide
surface) of the base member BP by air bearings 80A. The exposure
apparatus EX has a measuring stage-driving device 90D which is
capable of moving the measuring table 90T having the measuring
instrument thereon; and the exposure apparatus EX is capable of
moving the measuring table 90T in the directions of six degrees of
freedom of the X axis, Y axis, Z axis, .theta.X, .theta.Y, and
.theta.Z directions in accordance with the driving operation of the
measuring stage-driving device 90D.
[0107] The measuring stage-driving device 90D is constructed
substantially equivalently to the substrate stage-driving device
80D. The measuring stage-driving device 90D is provided with an XY
driving mechanism 91 which is capable of moving the stage body 90B
in the X axis, Y axis, and .theta.Z directions on the base member
BP, and a Z driving mechanism 92 which is capable of moving the
measuring table 90T in the Z axis, .theta.X, and .theta.Y
directions with respect to the stage body 90B.
[0108] The XY driving mechanism 91 includes, for example, an
actuator such as a linear motor. The controller 30 is capable of
moving the stage body 90B supported in the non-contact manner in
the X axis, Y axis, and .theta.Z directions on the base member BP
by controlling the XY driving mechanism 91. The Z driving mechanism
92 of the measuring stage-driving device 90D includes three
actuators 93A, 93B, 93C (actuator 93C provided on the back side of
the sheet surface of FIG. 1 is not shown), and encoders 94A, 94B,
94C (encoder 94C provided on the back side of the sheet surface of
FIG. 1 is not shown) which measure the driving amount of the
measuring table 90T in the Z axis direction brought about by the
actuators 93A, 93B, 93C, in the same manner as the Z driving
mechanism 92 of the measuring stage-driving device 90D.
[0109] The controller 30 is capable of moving the measuring table
90T in the Z axis, .theta.X, and .theta.Y directions with respect
to the stage body 90B by adjusting the driving amounts of the
plurality of actuators 93A, 93B, 93C of the Z driving mechanism 92
respectively. The controller 30 is capable of adjusting the
position of the measuring table 90T on the stage body 90B in
relation to the X axis, Y axis, and .theta.Z directions by
controlling the XY driving mechanism 91 to adjust the position of
the stage body 90B in relation to the X axis, Y axis, and .theta.Z
directions.
[0110] As described above, in this embodiment, the controller 30
controls the measuring stage-driving device 90D including the XY
driving mechanism 91 and the Z driving mechanism 92. Accordingly,
the controller 30 is capable of moving the measuring table 90T of
the measuring stage 90 in the directions of six degrees of freedom
of the X axis, Y axis, Z axis, .theta.X, .theta.Y, and .theta.Z
directions; and the controller 30 is capable of adjusting the
position of the measuring table 90T in relation to the directions
of six degrees of freedom of the X axis, Y axis, Z axis, .theta.X,
.theta.Y, and .theta.Z directions.
[0111] The position information about the measuring table 90T of
the measuring stage 90 in relation to the X axis, Y axis, and
.theta.Z directions is measured by a laser interferometer 77 of the
measuring system 70. The laser interferometer 77 measures the
position information about the measuring table 90T in relation to
the X axis, Y axis, and .theta.Z directions by using a reflecting
surface 78 provided on the measuring table 90T. The measuring
system 70 may measure, for example, the position information about
the measuring table 90T in relation to the Z axis, .theta.X, and
.theta.Y directions by using the laser interferometer 77.
[0112] The encoders 94A, 94B, 94C of the Z driving mechanism 92 are
capable of measuring the driving amounts in the Z axis direction
(displacement amounts from a reference position) at the respective
support points of the actuators 93A, 93B, 93C with respect to the
measuring table 90T. The measurement results are outputted to the
controller 30. The controller 30 can determine the position of the
measuring table 90T in relation to the Z axis, .theta.X, and
.theta.Y directions on the basis of the measurement results of the
encoders 94A, 94B, 94C.
[0113] The controller 30 drives the measuring stage-driving device
90D to control the position of the measuring table 90T on the basis
of measurement result of the laser interferometer 77 and the
measurement results of the encoders 94A, 94B, 94C.
[0114] The exposure apparatus, which is provided with the substrate
stage which holds the substrate P and the measuring stage which is
provided with the measuring instrument, is disclosed, for example,
in Japanese Patent Application Laid-open No. 11-135400
(corresponding to International Publication No. 1999/23692) and
Japanese Patent Application Laid-open No. 2000-164504
(corresponding to U.S. Pat. No. 6,897,963). The disclosure of U.S.
Pat. No. 6,897,963 is incorporated herein by reference within a
range of permission of the domestic laws and ordinances of the
designated or selected state.
[0115] As shown in FIG. 1, the exposure apparatus EX of this
embodiment is provided with a first detecting system 10 which
determines the position information about the image of the first
pattern PA1 formed in the first exposure area AR1 and the position
information about the image of the second pattern PA2 formed in the
second exposure area AR2. The first detecting system 10 of this
embodiment is an alignment system of TTR (Through The Reticle)
system using a light beam having an exposure wavelength, which is
such an alignment system of VRA (Visual Reticle Alignment) system
that a light beam is radiated onto a mark, and image data of the
mark photographed or imaged by a CCD camera or the like is
subjected to image processing to detect the mark position, as
disclosed, for example, in Japanese Patent Application Laid-open
No. 7-176468 (corresponding to U.S. Pat. No. 6,498,352).
[0116] Reference marks FM are provided on the measuring stage 90
(see FIG. 7). The first detecting system 10 is capable of detecting
the reference marks FM provided on the measuring stage 90 via the
projection optical system PL. The first detecting system 10 can
determine the positional relationship between the first pattern PA1
and the reference marks FM and the positional relationship between
the second pattern PA2 and the reference marks FM by detecting the
reference marks FM via the projection optical system PL. The first
detecting system 10 of this embodiment includes a first
sub-detecting system 11 which detects the positional relationship
between the first pattern PA1 and the reference marks FM, and a
second sub-detecting system 12 which detects the positional
relationship between the second pattern PA2 and the reference marks
FM. The first and second sub-detecting systems 11, 12 are arranged
over or above the mask stage 60.
[0117] A first alignment mark RM1 is provided on the first mask M1
(see FIG. 5). The first sub-detecting system 11 simultaneously
observes the first alignment mark RM1 and a conjugate image of the
reference mark FM via the projection optical system PL. The first
sub-detecting system 11 of the first detecting system 10 is capable
of detecting the positional relationship between the first pattern
PA1 and the reference mark FM by simultaneously observing the first
alignment mark RM1 which is provided in the predetermined
positional relationship with respect to the first pattern PA1 and
the reference mark FM via the projection optical system PL.
[0118] Similarly, a second alignment mark RM2 is provided on the
second mask M2 (see FIG. 5). The second sub-detecting system 12
simultaneously observes the second alignment mark RM2 and a
conjugate image of the reference mark FM via the projection optical
system PL. The second sub-detecting system 12 of the first
detecting system 10 is capable of detecting the positional
relationship between the second pattern PA2 and the reference mark
FM by simultaneously observing the second alignment mark RM2 which
is provided in the predetermined positional relationship with
respect to the second pattern PA2 and the reference mark FM via the
projection optical system PL.
[0119] The exposure apparatus EX of this embodiment is provided
with a second detecting system 20 which detects a reference mark FP
provided on the measuring stage 90 (see FIG. 7) and alignment marks
AM provided on the substrate P (see FIGS. 6 and 7). The second
detecting system 20 of this embodiment is an alignment system of
the off-axis system provided in the vicinity of the projection
optical system PL, and is such an alignment system of FIA (Field
Image Alignment) system that a broad band detecting light flux,
which does not photosensitize the photosensitive material on the
substrate P, is radiated onto an objective mark (alignment mark AM,
reference mark FP), and an image of the objective mark imaged or
formed on a light-receiving surface with the reflected light beam
from the objective mark and an image of an index (index mark or
reference mark on a reference plate provided in the second
detecting system 20) are photographed or imaged by using an image
pickup device (CCD or the like) to perform the image processing for
the image pickup signals thereof, thereby measuring the position of
the mark, as disclosed, for example, in Japanese Patent Application
Laid-open No. 4-65603 (corresponding to U.S. Pat. No. 5,493,403).
The contents of U.S. Pat. No. 5,493,403 is incorporated herein by
reference within a range of permission of the domestic laws and
ordinances of the designated or selected state.
[0120] The reference marks FM and the reference mark FP are
provided in a predetermined positional relationship on the
measuring stage 90. The second detecting system 20 detects the
reference mark FP and the alignment mark AM provided on the
substrate P. The controller 30 is capable of adjusting the
positional relationship among the image of the first pattern PA1,
the image of the second pattern PA2, and the shot area S on the
substrate P on the basis of the detection results of the first
detecting system 10 and the second detecting system 20.
[0121] FIG. 5 schematically shows the relationship between the
first illumination area IA1 and the second illumination area IA2
and the first mask M1 and the second mask M2. FIG. 6 schematically
shows the relationship among the first exposure area AR1 and the
second exposure area AR2 and the shot area S as the
exposure-objective area on the substrate P. In this embodiment, the
first exposure area AR1 onto which the first exposure light beam
EL1 is radiated and the second exposure area AR2 onto which the
second exposure light beam EL2 is radiated are the projection areas
of the projection optical system PL conjugate with the first and
second illumination areas IA1, IA2, respectively.
[0122] The illumination system IL radiates the first exposure light
beam EL1 onto the first pattern PA1. Further, the illumination
system IL radiates the second exposure light beam EL2 onto the
second pattern PA2. The projection optical system PL forms the
image of the first pattern PA1 in the first exposure area AR1 by
radiating the first exposure light beam EL1 from the first pattern
onto the first exposure area AR1. The projection optical system PL
forms the image of the second pattern PA2 in the second exposure
area AR2 by radiating the second exposure light beam EL2 from the
second pattern PA2 onto the second exposure area AR2.
[0123] The controller 30 radiates the first exposure light beam EL1
and the second exposure light beam EL2 onto the first exposure area
AR1 and the second exposure area AR2 respectively via the first
mask M1 and the second mask M2 by the illumination system IL and
the projection optical system PL while moving the shot area S on
the substrate P in the Y axis direction with respect to the first
exposure area AR1 and the second exposure area AR2 by using the
substrate stage 80 in synchronization with the movement effected by
the mask stage 60 of the first mask M1 and the second mask M2 in
the Y axis direction with respect to the first illumination area
IA1 and the second illumination area IA2. Accordingly, the shot
area S on the substrate P is subjected to the multiple exposure
(double exposure) with the image of the first pattern PA1 formed in
the first exposure area AR1 and the image of the second pattern PA2
formed in the second exposure area AR2.
[0124] The controller 30 performs the multiple exposure for the
shot area S on the substrate P by radiating the first exposure
light beam EL1 from the first pattern PA1 and the second exposure
light beam EL2 from the second pattern PA2 onto the first exposure
area AR1 and the second exposure area AR2 respectively while
controlling the mask stage 60 and the substrate stage 80 so that
the movement in the Y axis direction of the first mask M1 with
respect to the first illumination area IA1, the movement in the Y
axis direction of the second mask M2 with respect to the second
illumination area IA2, and the movement in the Y axis direction of
the substrate P with respect to the first and second exposure areas
AR1, AR2 are synchronously performed.
[0125] As shown in FIG. 5, in this embodiment, the first mask M1
and the second mask M2 are arranged and aligned in the Y axis
direction. The first mask M1 is arranged on the -Y side with
respect to the second mask M2. The first illumination area IA1,
which is brought about by the first exposure light beam EL1 on the
first mask M1, is defined to have a rectangular shape (slit-shaped
form) in which the X axis direction is the longitudinal direction.
The second illumination area IA2, which is brought about by the
second exposure light beam EL2 on the second mask M2, is also
defied to have a rectangular shape (slit-shaped form) in which the
X axis direction is the longitudinal direction.
[0126] As shown in FIG. 6, in this embodiment, the first exposure
area AR1 and the second exposure area AR2 are set at the different
positions in the Y axis direction in the field of the projection
optical system PL. The substrate stage 80 is capable of moving the
shot area S on the substrate P in the Y axis direction with respect
to the first exposure area AR1 and the second exposure area AR2.
Each of the first exposure area AR1 and the second exposure area
AR2 is rectangular (slit-shaped), wherein the X axis direction is
the longitudinal direction. The first exposure area AR1 and the
second exposure area AR2 can be simultaneously arranged in one shot
area S. That is, in this embodiment, the distance between the first
exposure area AR1 (center of the first exposure area AR1) and the
second exposure area AR2 (center of the second exposure area AR2)
in the Y axis direction is smaller than the width of one shot area
S on the substrate P in the Y axis direction. In this embodiment,
the first exposure area AR1 and the second exposure area AR2 are
separated from each other in the Y axis direction. The first
exposure area AR1 is defined on the +Y side with respect to the
second exposure area AR2.
[0127] The controller 30 moves the first mask M1 having the first
pattern PA1 and the second mask M2 having the second pattern PA2 in
the scanning direction (Y axis direction) by using the mask stage
60 during the exposure for the shot area S on the substrate P.
Further, the controller 30 moves the substrate P in the scanning
direction (Y axis direction) with respect to the first exposure
area AR1 and the second exposure area AR2 by using the substrate
stage 80 so that the shot area S on the substrate P passes across
the first exposure area AR1 and the second exposure area AR2. In
this embodiment, the controller 30 illuminates the first pattern
PA1 of the first mask M1 and the second pattern PA2 of the second
mask M2 with the first exposure light beam EL1 and the second
exposure light beam EL2 respectively while moving the first mask M1
and the second mask M2 in the same scanning direction (Y axis
direction) by using the mask stage 60 during the exposure for the
shot area S on the substrate P. The first mask M1 and the second
mask M2 are placed on the main stage 61. The controller 30 drives
the main stage 61 by using the main stage-driving device 64.
Accordingly, the first mask M1 and the second mask M2 are moved in
the same scanning direction (Y axis direction). For example, when
the first mask M1 is moved in the +Y direction by the main stage 61
of the mask stage 60 during the exposure for the shot area S on the
substrate P, the second mask M2 is also moved together in the +Y
direction. When the first mask M1 is moved in the -Y direction, the
second mask M2 is also moved together in the -Y direction. The
projection optical system PL of this embodiment forms the inverted
image. The controller 30 moves the first and second masks M1, M2
and the substrate P in the mutually opposite scanning directions (Y
axis directions) during the exposure for the shot area S on the
substrate P. For example, upon moving the first and second masks
M1, M2 in the +Y direction by using the mask stage 60, the
controller 30 moves the substrate P in the -Y direction by using
the substrate stage 80. Upon moving the first and second masks M1,
M2 in the -Y direction, the controller 30 moves the substrate P in
the +Y direction.
[0128] FIGS. 5 and 6 show a state in which the substrate P is moved
in the -Y direction in synchronization with the movement of the
first and second masks M1, M2 in the +Y direction during the
exposure for the shot area S on the substrate P.
[0129] As described above, in this embodiment, the first exposure
area AR1 and the second exposure area AR2 are set at the different
positions in the scanning direction (Y axis direction) of the
substrate P on the substrate P. The first exposure area AR1 is set
on the +Y side with respect to the second exposure area AR2. The
first mask M1 and the second mask M2 are moved in the same scanning
direction (Y axis direction). The projection optical system PL of
this embodiment forms the inverted image, and the first and second
masks M1, M2 and the substrate P are moved in the mutually opposite
scanning directions (Y axis directions). Therefore, in this
embodiment, as shown in FIG. 5, the first mask M1 is arranged on
the -Y side with respect to the second mask M2; and the first
illumination area IA1 and the second illumination area IA2 are
defined at the mutually different positions with respect to the
centers of the first and second masks M1, M2 respectively during
the scanning exposure. In other words, the positions of the first
and second masks M1, M2 in relation to the first and second
illumination areas IA1, IA2 are defined, for example, as shown in
FIG. 5 depending on the positional relationship between the first
and second exposure areas AR1, AR2. With this, the image of the
first pattern PA1 and the image of the second pattern PA2 can be
formed in the desired positional relationship in the shot area S on
the substrate P.
[0130] In this embodiment, when the shot area S on the substrate P
is subjected to the exposure, the controller 30 is operated such
that one of the illumination for the first pattern PA1 with the
first exposure light beam EL1 and the illumination for the second
pattern PA2 with the second exposure light beam EL2 is started and
then the other of the illuminations is started, and one of the
illuminations is completed and then the other of the illuminations
is completed. Further, the controller 30 is operated such that one
of the radiation of the first exposure light beam EL1 onto the shot
area S (projection of the image of the first pattern PA1 by the
first exposure light beam EL1) and the radiation of the second
exposure light beam EL2 onto the shot area S (projection of the
image of the second pattern PA2 by the second exposure light beam
EL2) is started and then the other of the radiations is started,
and one of the radiations is completed and the other of the
radiations is completed.
[0131] For example, as shown in FIG. 6, when the exposure is
performed while moving the shot area S of the substrate P in the -Y
direction, the controller 30 is operated as follows. That is, the
illumination for the first pattern PA1 with the first exposure
light beam EL1 is started, and then the illumination for the second
pattern PA2 with the second exposure light beam EL2 is started;
afterwards, the illumination for the first pattern PA1 with the
first exposure light beam EL1 is completed, and then the
illumination for the second pattern PA2 with the second exposure
light beam EL2 is completed. Further, the controller 30 is operated
as follows. That is, the projection of the first pattern PA1 with
the first exposure light beam EL1 onto the shot area S is started,
and then the projection of the second pattern PA2 with the second
exposure light beam EL2 onto the shot area S is started;
afterwards, the projection of the first pattern PA1 with the first
exposure light beam EL1 onto the shot area S is completed, and then
the projection of the second pattern PA2 with the second exposure
light beam EL2 onto the shot area S is completed.
[0132] An explanation will be made with reference to FIGS. 5 and 6
about an exemplary sequence adopted when the first and second
exposure light beams EL1, EL2 are radiated onto the shot area S on
the substrate P. The following description will be made as
exemplified by a case in which the shot area S on the substrate P
is exposed while synchronously performing the movement of the first
mask M1 and the second mask M2 in the +Y direction effected by the
mask stage 60 and the movement of the shot area S on the substrate
P in the -Y direction with respect to the first exposure area AR1
and the second exposure area AR2 effected by the substrate stage
80.
[0133] The positions of the first exposure area AR1 and the second
exposure area AR2 in the XY coordinate system (including the
relative positional relationship between the first exposure area
AR1 and the second exposure area AR2), which are defined by the
measuring system 70 (laser interferometer 75), are determined
depending on, for example, the position of the fixed blind in the
illumination system IL and the arrangement of the respective
optical elements for constructing the projection optical system PL
including, for example, the intermediate optical member 40 and the
like. The first and second exposure areas AR1, AR2 have a same
shape and a same size, and they are the rectangular areas which are
long in the X axis direction respectively. Further, the first and
second exposure areas AR1, AR2 are located at a same position in
the X axis direction, and the first and second exposure areas AR1,
AR2 are separated from each other by a predetermined distance in
the Y axis direction. The positions of the first and second
exposure areas AR1, AR2 can be adjusted by using the first and
second imaging characteristic-adjusting devices LC1, LC2,
respectively.
[0134] With reference to FIG. 5, the controller 30 starts the
illumination for the first pattern PA1 with the first exposure
light beam EL1 at a point of time when an edge, of the first
pattern formation area SA1, on the +Y side at which the first
pattern PA1 of the first mask M1 is formed, arrives at an edge of
the first illumination area IA1 on the -Y side. With reference to
FIG. 6, an edge G1 of the shot area S on the -Y side on the
substrate P arrives at an edge, of the first exposure area AR1, on
the +Y side at the point of time at which an edge, of the first
pattern formation area SA1, on the +Y side of the first mask M1
arrives at the first illumination area IA1; and the radiation of
the first exposure light beam EL1 onto the first exposure area AR1
is started.
[0135] The controller 30 continuously illuminates the first pattern
PA1 with the first exposure light beam EL1 by continuing the
movement of the mask stage 60 (main stage 61) in the +Y direction.
The first pattern PA1 passes across the first illumination area IA1
by the continuous movement of the mask stage 60 in the +Y
direction.
[0136] The controller 30 continuously performs the radiation of the
first exposure light beam EL1 onto the first exposure area AR1,
namely the projection of the image of the first pattern PA1 with
the first exposure light beam EL1 onto the shot area S on the
substrate P by continuing the movement of the substrate stage 80 in
the -Y direction in synchronization with the movement of the mask
stage 60 in the +Y direction. The shot area S on the substrate P
passes across the first exposure area AR1 by the continuous
movement of the substrate stage 80 in the -Y direction.
[0137] Then, the illumination for the first pattern PA1 with the
first exposure light beam EL1 is completed at the point of time at
which the edge, of the first pattern formation area SA1, on the -Y
side of the first mask M1 arrives at edge, of the first
illumination area IA1, on the +Y side. With reference to FIG. 6,
the edge G2 of the shot area S on the substrate P on the +Y side
arrives at the edge of the first exposure area AR1 on the -Y side
at the point of time at which the edge, of the first pattern
formation area SA1 of the first mask M1, on the -Y side arrives at
the edge, of the first illumination area IA1, on the +Y side; and
the radiation of the first exposure light beam EL1 onto the first
exposure area AR1 is stopped at the point of time at which the edge
G2 of the shot area S on the +Y side arrives at the edge of the
first exposure area AR1 on the -Y side. With this, the exposure of
the shot area S with the first exposure light beam EL1 radiated
onto the first exposure area AR1, namely the projection of the
image of the first pattern PA1 with the first exposure light beam
EL1 onto the shot area S comes to an end.
[0138] The edge on the +Y side of the second pattern formation area
SA2 of the second mask M2 arrives at the edge on the -Y side of the
second illumination area IA2 at a predetermined timing during the
period of time in which the first pattern formation area SA1 of the
first mask M1 is passing across the first illumination area IA1;
and the illumination for the second pattern PA2 with the second
exposure light beam EL2 is started. With reference to FIG. 6, the
edge G1 on the -Y side of the shot area S on the substrate P
arrives at the edge on the +Y side of the second exposure area AR2
at the point of time at which the edge on the +Y side of the second
pattern formation area SA2 of the second mask M2 arrives at the
second illumination area IA2; and the radiation of the second
exposure light beam EL2 onto the second exposure area AR2 is
started. That is, the edge G1 on the -Y side of the shot area S
arrives at the second exposure area AR2 at a predetermined timing
during the period of time in which the shot area S on the substrate
P is passing across the first exposure area AR1; and the projection
of the image of the second pattern PA2 with the second exposure
light beam EL2 onto the shot area S is started.
[0139] The controller 30 continuously illuminates the second
pattern PA2 with the second exposure light beam EL2 by continuing
the movement of the mask stage 60 (main stage 61) in the +Y
direction. The second pattern PA2 passes across the second
illumination area IA2 by the continuous movement of the mask stage
60 in the +Y direction.
[0140] The controller 30 continuously performs the projection of
the image of the second pattern PA2 with the second exposure light
beam EL2 onto the shot area S on the substrate P by continuing the
movement of the substrate stage 80 in the -Y direction in
synchronization with the movement of the mask stage 60 in the +Y
direction. The shot area S on the substrate P passes across the
second exposure area AR2 by the continuous movement of the
substrate stage 80 in the -Y direction.
[0141] The illumination with the second exposure light beam EL2 for
the second pattern PA2 is completed at the point of time at which
the edge, of the second pattern formation area SA2, on the -Y side
of the second mask M2 arrives at edge, of the second illumination
area IA2, on the +Y side. With reference to FIG. 6, the edge G2, of
the shot area S on the substrate P, on the +Y side arrives at the
edge, of the second exposure area AR2, on the -Y side at the point
of time at which the edge, of the second pattern formation area SA2
of the second mask M2, on the -Y side arrives at the edge, of the
second illumination area IA2, on the +Y side; and the radiation of
the second exposure light beam EL2 onto the second exposure area
AR2 is stopped at the point of time at which the edge G2 of the
shot area S on the +Y side arrives at the edge of the second
exposure area AR2 on the -Y side. With this, the exposure of the
shot area S with the second exposure light beam EL2 radiated onto
the second exposure area AR2, namely the projection of the image of
the second pattern PA2 with the second exposure light beam EL2 onto
the shot area S comes to an end.
[0142] Thus, the photosensitive material layer of the shot area S
on the substrate P, which has been exposed with the first exposure
light beam EL1 radiated onto the first exposure area AR1, is
exposed again (subjected to the double exposure) with the second
exposure light beam EL2 radiated onto the second exposure area AR2
without performing, for example, the developing step and the
like.
[0143] The illumination with the first exposure light beam EL1 for
the first pattern PA1 is completed at the predetermined timing
during the period of time in which the second pattern formation
area SA2 is passing across the second illumination area IA2. The
radiation of the first exposure light beam EL1 onto the shot area S
is completed at the predetermined timing during the period of time
in which the shot area S on the substrate P is passing across the
second exposure area AR2.
[0144] As described above, in this embodiment, one shot area S on
the substrate P can be subjected to the multiple exposure (double
exposure) with the image of the first pattern PA1 and the image of
the second pattern PA2 by one time of the scanning operation.
[0145] FIG. 7 shows a plan view illustrating the substrate stage 80
and the measuring stage 90. As shown in FIG. 7, a plurality of shot
areas S1 to S21 as exposure-objective areas are set in a matrix
form on the substrate P. Further, a plurality of alignment marks AM
are provided corresponding to the shot areas S1 to S21
respectively. When the shot areas S1 to S21 of the substrate P are
subjected to the exposure respectively, the controller 30 radiates
the first and second exposure light beams EL1, EL2 onto the
substrate P by radiating the exposure light beams EL1, EL2 onto the
first and second exposure areas AR1, AR2 respectively while
relatively moving the first and second exposure areas AR1, AR2 and
the substrate P, for example, as indicated by arrows y1 in FIG. 7.
The controller 30 controls the operation of the substrate stage 80
so that the first and second exposure areas AR1, AR2 are moved
along the arrows y1 with respect to the substrate P.
[0146] A reference plate 50, on which a plurality of reference
marks are formed, is provided as one of the measuring instrument
(measuring member) at a predetermined position of the upper surface
of the measuring stage 90. The reference marks FM to be detected by
the first detecting system 10 and the reference mark FP to be
detected by the second detecting system 20 as described above are
formed in the predetermined positional relationship on the upper
surface of the reference plate 50.
[0147] An aperture 158, through which a light beam is passable, is
formed on the upper surface of the measuring stage 90 at a position
separated and away from the reference plate 50. At least a part of
a wave front aberration-measuring instrument 159, which is as
disclosed, for example, in International Publication No. 99/60361
(corresponding to European Patent No. 1,079,223), is arranged at a
position below or under the aperture 158 (in the -Z direction).
[0148] Although not shown, the measuring stage 90 is provided with
an exposure light beam-measuring instrument arranged thereon which
measures information (for example, light amount, illuminance, and
uneven illuminance) about the exposure energy of the first and
second exposure light beams EL1, EL2 radiated onto the measuring
stage 90 via the projection optical system PL. Instruments usable
as the exposure light beam-measuring instrument include an
unevenness measuring instrument for measuring the uneven
illuminance as disclosed, for example, in Japanese Patent
Application Laid-open No. 57-117238 (corresponding to U.S. Pat. No.
4,465,368) or for measuring the fluctuation amount of the
transmittance of the projection optical system PL with respect to
the exposure light beam EL as disclosed in Japanese Patent
Application Laid-open No. 2001-267239, and an radiation amount
measuring instrument (illuminance measuring instrument) as
disclosed, for example, in Japanese Patent Application Laid-open
No. 11-16816 (corresponding to United States Patent Application
Publication No. 2002/0061469).
[0149] A plate member 50' is arranged on the upper surface of the
measuring stage 90 at a position separated and away from the
reference plate 50. An aperture 161, through the light beam is
passable, is formed at a substantially central portion of the plate
member 50'. At least a part of a spatial image-measuring instrument
162, which is as disclosed, for example, in Japanese Patent
Application Laid-open No. 2002-14005 (corresponding to United
States Patent Application Publication No. 2002/0041377) and U.S.
Pat. No. 4,629,313, is arranged at a position below or under the
aperture 161 (in the -Z direction). The spatial image-measuring
instrument 162 is capable of measuring the position of the first
image plane IS1 on which the image of the first pattern PA1 is
formed and the position of the second image plane IS2 on which the
image of the second pattern PA2 is formed. The contents of U.S.
Pat. No. 4,465,368, United States Patent Application Publication
No. 2002/0061469, United States Patent Application Publication No.
2002/0041377, and U.S. Pat. No. 4,629,313, which disclose the
measuring instrument as described above, are incorporated herein by
reference within a range of permission of the domestic laws and
ordinances of the designated or selected state.
[0150] FIG. 8 schematically shows the spatial image-measuring
instrument 162. In FIG. 8, the first, second, and third optical
systems 41, 42, 43 of the projection optical system PL are
schematically shown.
[0151] The spatial image-measuring instrument 162 is provided for
the measuring stage 90 (measuring table 90T) arrangeable on the
side of the image plane of the projection optical system PL. As
described above, the aperture 161, through the light beam is
passable, is formed in the measuring stage 90. In this embodiment,
the aperture 161 is formed in the plate member 50' provided on the
measuring stage 90. The plate member 50' is formed of a material
such as silica glass through which the light beam is transmissive.
A substantially entire region of the surface of the plate member
50' is a light-shielding area covered with a metal such as chromium
(Cr) or the like. The aperture 161 is an aperture formed through a
part of the light-shielding area, through which the light beam is
transmissive. In this embodiment, the aperture 161 is a slit
pattern. In this embodiment, the upper surface (light-shielding
area) of the plate member 50' has a function as the reference
reflecting surface for defining the measurement reference surface
of the focus/leveling-detecting system 130. The reference
reflecting surface of the upper surface of the plate member 50' is
an ideal plane having a predetermined reflectance capable of
reflecting the detecting light beam of the focus/leveling-detecting
system 130, and has such an area size that both of the first
exposure area AR1 and the second exposure area AR2 can be
simultaneously arranged therein.
[0152] An internal space 58 of the measuring stage 90 is defined
below or under the plate member 50' (in the -Z direction). A part
of the spatial image-measuring instrument 162, which measures a
spatial image projected onto the measuring stage 90 by the
projection optical system PL, is provided in the internal space 58.
The spatial image-measuring instrument 162 is provided with an
optical system 163 which is provided below or under the plate
member 50', and a light-receiving element 164 which receives the
light beam via the optical system 163.
[0153] The aperture 161 is formed to have such a size that an image
of the measuring mark formed at a predetermined point in each of
the first and second exposure areas AR1 and AR2 via the projection
optical system PL can be detected, the size being smaller than the
first exposure area AR1 and the second exposure area AR2. The
controller 30 is capable of arranging the aperture 161 in each of
the first exposure area AR1 and the second exposure area AR2 to
adjust the position in the XY directions of the measuring stage 90
by using the measuring stage-driving device 90D. The aperture 161
is capable of receiving the first and second exposure light beams
EL1, EL2 radiated onto the first and second exposure areas AR1, AR2
respectively on the side of the image plane of the projection
optical system PL. The light beam, which is radiated onto the
aperture 161 of the plate member 50' and which is allowed to pass
through the aperture 161, is received by the light-receiving
element 164 via the optical system 163 of the spatial
image-measuring instrument 162. The controller 30 can determine the
position information about the first image plane IS1 on which the
image of the first pattern PA1 is formed and the position
information about the second image plane IS2 on which the image of
the second pattern PA2 is formed, on the basis of the measurement
result of the spatial image-measuring instrument 162.
[0154] Next, an explanation will be made with reference to FIGS. 8,
9A, and 9B about an example of the operation for measuring the
position information about the first image plane IS1 and the
position information about the second image plane IS2 by using the
spatial image-measuring instrument 162. FIGS. 8 and 9A show a state
in which the position of the first image plane IS1 is measured by
using the spatial image-measuring instrument 162. FIG. 9B shows a
state in which the position of the second image plane IS2 is
measured.
[0155] As described above, the positions of the first exposure area
AR1 and the second exposure area AR2 are determined depending on,
for example, the position of the fixed blind included in the
illumination system IL, the arrangement of the respective optical
elements such as the intermediate optical member 40 for
constructing the projection optical system PL, and the like. The
position information about the first exposure area AR1 and the
second exposure area AR2 in the XY coordinate system defined by the
measuring system 70 is known (obtained). The aperture 161 is formed
to be smaller than the first and second exposure areas AR1, AR2.
Therefore, the controller 30 is capable of arranging the aperture
161 on the measuring stage 90 at an arbitrary position in the first
exposure area AR1 and the second exposure area AR2 by driving the
measuring stage-driving device 70D while measuring the position of
the measuring stage 90 (measuring table 90T) by using the measuring
system 70 (laser interferometer 77).
[0156] When the position of the first image plane IS1 is measured
by using the spatial image-measuring instrument 162, the controller
30 adjusts the position of the measuring stage 90 in the XY
directions by using the measuring stage-driving device 90D to
arrange the aperture 161 in the first exposure area AR1 while
measuring the position information about the measuring stage 70 by
using the laser interferometer 77 of the measuring system 70 as
shown in FIGS. 8 and 9A. When the position of the first image plane
IS1 is measured by using the spatial image-measuring instrument
162, the first mask M1 is placed on the first substage 62 of the
mask stage 60.
[0157] After the first mask M1 is held by the first substage 62 of
the mask stage 60, the controller 30 adjusts the position of the
mask stage 60 so that the first pattern PA1 of the first mask M1 is
arranged on the optical path for the first exposure light beam EL1.
The controller 30 controls the mask stage 60 (first substage 62) so
that the first pattern formation surface K1 of the first mask M1 is
arranged at a predetermined position in relation to the Z axis
direction. The controller 30 radiates the first exposure light beam
EL1 onto the first mask M1 by the illumination system IL. A
measuring mark is formed on the lower surface of the first mask M1
(pattern formation surface K1), and by radiating the first exposure
light beam EL1 onto the first mask M1, a spatial image (projected
image) of the measuring mark is formed in the first exposure area
AR1 via the projection optical system PL. In this embodiment, the
measuring mark is arranged at a position in the first illumination
area IA1 corresponding to a certain measuring point among a
plurality of measuring points for which the image plane positions
are to be measured in the first exposure area AR1, so that the
spatial image is formed at the certain measuring point. The
aperture 161 is arranged in the first exposure area AR1. The
controller 30 moves the substrate stage 90 in the X axis direction
or the Y axis direction to perform the relative scanning for the
aperture 161 and the spatial image of the measuring mark formed at
the certain measuring point. The first exposure light beam EL1,
which passes through the aperture 161 during the relative scanning,
is received by the light-receiving element 164 of the spatial
image-measuring instrument 162. That is, the spatial image of the
measuring mark is measured by the spatial image-measuring
instrument 162. The spatial image-measuring instrument 162 outputs
the measurement result (light intensity signal of the spatial
image) to the controller 30.
[0158] When the position of the first image plane IS1 is measured
by using the spatial image-measuring instrument 162, the controller
30 repeatedly performs the measurement of the spatial image of the
measuring mark a plurality of times while moving the measuring
table 90T (upper surface of the plate member 50') at predetermined
pitches in the Z axis direction by using the actuators 93A, 93B,
93C of the measuring stage-driving device 90D to thereby store a
plurality of light intensity signals (photoelectric conversion
signals) for the measurements performed respectively. The
controller CONT 30 determines the contrast of each of the light
intensity signals obtained by the measurement repeatedly performed
the plurality of times. The controller 30 determines a position of
the measuring table 90T (upper surface of the plate member 50') in
the Z axis direction corresponding to a light intensity signal,
among the light intensity signals, at which the contrast is
maximized. The position is determined as the position at which the
first image plane IS1 is formed, namely the best focus position of
the projection optical system PL among the measuring points in the
first exposure area AR1. Here, the controller 30 measures the
spatial image by moving the measuring table 90T in the Z axis
direction at the predetermined pitch while measuring the driving
amounts of the actuators 93A, 93B, 93C by using the encoders 94A,
94B, 94C provided for the measuring stage 90. The encoders 94A,
94B, 94C are capable of measuring the driving amounts of the
actuators 93A, 93B, 93C in the Z axis direction with respect to the
predetermined reference position. Therefore, the controller 30 can
determine the position in the Z axis direction of the measuring
table 90T (upper surface of the plate member 50') with respect to
the predetermined reference position during the measurement of the
spatial image on the basis of the measurement results of the
encoders 94A, 94B, 94C. Therefore, the controller 30 can determine
the position of the first image plane IS1 (position in the Z axis
direction) on the basis of the measurement result of the spatial
image-measuring instrument 162 and the measurement results of the
encoders 94A, 94B, 94C. The plurality of measuring marks are
provided on the pattern formation surface K1 of the mask M1. The
plurality of measuring marks are arranged at the plurality of
positions in the first illumination area IA1 corresponding to the
plurality of measuring points in the first exposure area AR1
respectively. Accordingly, by detecting the spatial images of the
respective measuring marks with the spatial image-measuring
instrument 162 in the same manner as described above, the position
of the first image plane IS1 (i.e., the best focus position of the
projection optical system PL) can be determined at the plurality of
measuring points in the first exposure area AR1 respectively.
Therefore, even when the first image plane IS1 is inclined and/or
curved in the first exposure area AR1, the position of the first
image plane IS1 can be measured accurately.
[0159] When the position of the second image plane IS2 is measured
by using the spatial image-measuring instrument 162, the controller
30 adjusts the position of the measuring stage 90 in the XY
directions, by using the measuring stage-driving device 90D, on the
basis of the positional relationship between the first exposure
area AR1 and the second exposure area AR2 to arrange the aperture
161 in the second exposure area AR2 while measuring the position
information about the measuring stage 70 by using the laser
interferometer 77 of the measuring system 70, as shown in FIG. 9B.
When the position of the second image plane IS2 is measured by
using the spatial image-measuring instrument 162, the second mask
M2 is placed on the second substage 63 of the mask stage 60.
[0160] After the second mask M2 is held by the second substage 63
of the mask stage 60, the controller 30 adjusts the position of the
mask stage 60 so that the second pattern PA2 of the second mask M2
is arranged on the optical path for the second exposure light beam
EL2. The controller 30 controls the mask stage 60 (second substage
63) so that the second pattern formation surface K2 of the second
mask M2 is arranged at a predetermined position in relation to the
Z axis direction. The controller 30 radiates the second exposure
light beam EL2 onto the second mask M2 by the illumination system
IL. A measuring mark is also formed on the lower surface of the
second mask M2 (pattern formation surface K2), and by radiating the
second exposure light beam EL2 onto the second mask M2, a spatial
image of the measuring mark is formed in the second exposure area
AR2 via the projection optical system PL. In this embodiment, the
measuring mark is arranged at a position in the second illumination
area IA2 corresponding to a certain measuring point among a
plurality of measuring points for which the image plane positions
are to be measured in the second exposure area AR2, so that the
spatial image is formed at the certain measuring point. The
aperture 161 is arranged in the second exposure area AR2. The
controller 30 moves the substrate stage 90 in the X axis direction
or the Y axis direction to perform the relative scanning for the
aperture 161 and the spatial image of the measuring mark formed at
the certain measuring point. The second exposure light beam EL2,
which passes through the aperture 161 during the relative scanning,
is received by the light-receiving element 164 of the spatial
image-measuring instrument 162. That is, the spatial image of the
measuring mark is measured by the spatial image-measuring
instrument 162. The spatial image-measuring instrument 162 outputs
the measurement result (light intensity signal of the spatial
image) to the controller 30.
[0161] When the position of the second image plane IS2 is measured
by using the spatial image-measuring instrument 162, the controller
30 repeatedly performs the measurement of the spatial image of the
measuring mark a plurality of times while moving the measuring
table 90T (upper surface of the plate member 50') at predetermined
pitches in the Z axis direction by using the actuators 93A, 93B,
93C of the measuring stage-driving device 90D to store the light
intensity signals (photoelectric conversion signals) for the
measurements performed respectively in the same manner as in the
procedure for measuring the position of the first image plane IS1
described above. The controller CONT 30 determines the contrast for
each of the plurality of light intensity signals obtained by the
measurement repeatedly performed the plurality of times. The
controller 30 determines a position of the measuring table 90T
(upper surface of the plate member 50') in the Z axis direction
corresponding to a light intensity signal, among the light
intensity signals, at which the contrast is maximized; and the
controller 30 determines the position as the position at which the
second image plane IS2 is formed, namely the best focus position of
the projection optical system PL among the measuring points in the
second exposure area AR2. The controller 30 can determine the
position of the second image plane IS2 (position in the Z axis
direction) on the basis of the measurement result of the spatial
image-measuring instrument 162 and the measurement results of the
encoders 94A, 94B, 94C. A plurality of measuring marks are also
provided on the pattern formation surface K2 of the mask M2. The
plurality of measuring marks are arranged at a plurality of
positions in the second illumination area IA2 corresponding to the
plurality of measuring points in the second exposure area AR2
respectively. Accordingly, by detecting the spatial images of the
respective measuring marks with the spatial image-measuring
instrument 162 in the same manner as described above, the position
of the second image plane IS2 (i.e., the best focus position of the
projection optical system PL) can be determined at the plurality of
measuring points in the second exposure area AR2 respectively.
Therefore, even when the second image plane IS2 is inclined and/or
curved in the second exposure area AR2, the position of the second
image plane IS2 can be measured accurately.
[0162] As described above, in this embodiment, the spatial
image-measuring instrument 162, which receives the first and second
exposure light beams EL1, EL2 on the light-exit side of the
projection optical system PL, can be used to determine the position
(position in the Z axis, .theta.X, and .theta.Y directions) of the
first image plane IS1 on which the image of the first pattern PA1
is formed and the position (position in the Z axis, .theta.X, and
.theta.Y directions) of the second image plane IS2 on which the
image of the second pattern PA2 is formed.
[0163] A plurality of apertures 161 may be provided to the plate
member 50' of the measuring stage 90 on the basis of the positional
relationship between the first exposure area AR1 and the second
exposure area AR2. A part of the plurality of apertures may be
arranged in the first exposure area AR1, and the remaining part of
the apertures may be arranged in the second exposure area AR2. The
spatial image of the measuring mark of the first mask M1 and the
spatial image of the measuring mark of the second mask M2 may be
detected substantially simultaneously by using the spatial
image-measuring instrument 162 to obtain the position information
about the first image plane IS1 in the first exposure area AR1 and
the position information about the second image plane IS2 in the
second exposure area AR2. For example, the reference marks provided
for the mask stage 60 may be used, instead of the measuring marks
of the first and second masks M1, M2, to measure the position
information about the first and second image planes IS1, IS2. In
this embodiment, the same number of the measuring marks (or the
reference marks) as that of the plurality of measuring points
described above are arranged on the object plane of the projection
optical system PL to measure the position information about the
first image plane IS1 or the second image plane IS2. However, a
number of measuring marks (or reference marks) fewer than a number
of measuring points may be used to measure the position information
about the first and second image planes IS1, IS2. In this case, the
mask stage 60 may be moved to arrange the measuring marks (or the
reference marks) at a plurality of positions in the illumination
area corresponding to the plurality of measuring points
respectively. The position of the upper surface of the plate member
50' in the Z axis direction may be measured by using the
focus/leveling-detecting system 130 instead of using the encoders
94A, 94B, 94C.
[0164] In this embodiment, the shot area S on the substrate P is
subjected to the multiple exposure with the image of the first
pattern PA1 and the image of the second pattern PA2. Accordingly,
it is important to satisfactorily adjust the positional
relationship among the surface of the substrate P, the first image
plane IS1 on which the image of the first pattern PA1 is formed,
and the second image plane IS2 on which the image of the second
pattern PA2 is formed, in relation to the first exposure area AR1
and the second exposure area AR2 respectively, in order to form a
desired pattern on the substrate P. That is, the multiple exposure
for the shot area S on the substrate P includes a first scanning
exposure for the shot area S with the first exposure light beam EL1
radiated onto the first exposure area AR1 and a second scanning
exposure for the shot area S with the second exposure light beam
EL2 radiated onto the second exposure area AR2. Accordingly, it is
important to substantially match the first image plane IS1 and the
surface of the shot area S in the first exposure area AR1 during
the first scanning exposure (i.e., maintain the surface of the shot
area S within the depth of focus of the projection optical system
PL in the first exposure area AR1) and substantially match the
second image plane IS2 and the surface of the shot area S in the
second exposure area AR2 during the second scanning exposure (i.e.,
maintain the surface of the shot area S within the depth of focus
of the projection optical system PL in the second exposure area
AR2). In this embodiment, the first exposure area AR1 in which the
image of the first pattern PA1 is formed in the field of the
projection optical system PL and the second exposure area AR2 in
which the image of the second pattern PA2 is formed in the field of
the projection optical system PL are set at different positions.
Therefore, there is such a possibility that during the multiple
exposure for the shot area S the position of the surface of the
substrate P in the Z direction, .theta.X direction, and .theta.Y
direction in the first exposure area AR1 may be different from the
position of the surface of the substrate P in the Z direction,
.theta.X direction, and .theta.Y direction in the second exposure
area AR2. This is caused, for example, by the low flatness of the
surface of the substrate P and the presence of concave/convex
portions (unevenness, irregularities) on the surface of the
substrate. Therefore, it is important to adjust the surface
positional relationship among the first image plane IS1, the second
image plane IS2, and the surface of the substrate P so that the
desired pattern image is formed in each of the first exposure area
AR1 and the second exposure area AR2 in order to form the desired
pattern on the substrate P by the multiple exposure for the shot
area S of the substrate P.
[0165] When the shot area S on the substrate P is subjected to the
multiple exposure with the image of the first pattern PA1 and the
image of the second pattern PA2, the controller 30 adjusts at least
one of the positions of the first pattern formation surface K1 of
the first mask M1 and the second pattern formation surface K2 of
the second mask M2 by using the mask stage 60 to adjust at least
one of the positions of the first image plane IS1 and the second
image plane IS2. By doing so, the controller 30 is capable of
adjusting the surface positional relationship among the first image
plane IS1 on which the image of the first pattern PA1 is formed,
the second image plane IS2 on which the image of the second pattern
PA2 is formed, and the surface of the substrate P.
[0166] FIG. 10 schematically illustrates an example of the
positional relationship between the position of the first pattern
formation surface K1 of the first mask M1 and the position of the
first image plane IS1 on which the image of the first pattern PA1
is formed by the projection optical system PL. As shown in FIG. 10,
it is assumed that the first pattern formation surface K1 of the
first mask M1 is arranged at a first position Z1 in relation to the
Z axis direction, and the first image plane IS1, on which the image
of the first pattern PA1 of the first pattern formation surface K1
is formed, is formed at a second position Z2 in relation to the Z
axis direction. On this assumption, when the first pattern
formation surface K1 is displaced by a value .DELTA.ZK in the -Z
direction from the first position Z1 to be arranged at a third
position Z3, then the first image plane IS1 is also displaced by a
value .DELTA.ZI corresponding to the value .DELTA.ZK in the -Z
direction to be formed at a fourth position Z4. As described above,
when the first pattern formation surface K1 is moved in the -Z
direction, the first image plane IS1 is also moved in the -Z
direction. When the first pattern formation surface K1 is moved in
the +Z direction, the first image plane IS1 is also moved in the +Z
direction. When the first pattern formation surface K1 is inclined
in the .theta.X direction, the first image plane IS1 is also
inclined in the .theta.X direction. When the first pattern
formation surface K1 is inclined in the .theta.Y direction, the
first image plane IS1 is also inclined in the .theta.Y
direction.
[0167] As described above, the Z driving mechanism 67 of the first
substage-driving device 65 provided for the mask stage 60 is
capable of adjusting the position of the first mask M1 held by the
first substage 62 in the Z axis, .theta.X, and .theta.Y directions
as well as the position of the first pattern formation surface K1
in the Z axis, .theta.X, and .theta.Y directions. Therefore, the
controller 30 is capable of adjusting the position of the first
image plane IS1 by adjusting the position of the first pattern
formation surface K1 of the first mask M1 held by the first
substage 62 by using the Z driving mechanism 67 of the first
substage-driving device 65.
[0168] The relationship between the position of the first pattern
formation surface K1 and the position of the first image plane IS1
(for example, the relationship between the movement amount of the
first pattern formation surface K1 and the change amount of the
first image plane IS1) can be determined by using the spatial
image-measuring instrument 162 described above. For example, the
controller 30 can determine the position of the first image plane
IS1 corresponding to each of the positions of the first pattern
formation surface K1 in the Z axis direction by measuring the
spatial image of the measuring mark of the first mask M1 in
accordance with the same procedure as the procedure explained with
reference to FIGS. 8 and 9A while changing the position in the Z
axis direction of the first pattern formation surface K1 of the
first mask M1 at the predetermined pitch in the state shown in
FIGS. 8 and 9A.
[0169] Similarly, when the second pattern formation surface K2 is
moved in the -Z direction, the second image plane IS2 is also moved
in the -Z direction. When the second pattern formation surface K2
is moved in the +Z direction, the second image plane IS2 is also
moved in the +Z direction. When the second pattern formation
surface K2 is inclined in the .theta.X direction, the second image
plane IS2 is also inclined in the .theta.X direction. When the
second pattern formation surface K2 is inclined in the .theta.Y
direction, the second image plane IS2 is also inclined in the
.theta.Y direction. The Z driving mechanism 67 of the second
substage-driving device 66 provided for the mask stage 60 is
capable of adjusting the position of the second mask M2 held by the
second substage 63 in the Z axis, .theta.X, and .theta.Y directions
as well as the position of the second pattern formation surface K2
in the Z axis, .theta.X, and .theta.Y directions. Therefore, the
controller 30 is capable of adjusting the position of the second
image plane IS2 by adjusting the position of the second pattern
formation surface K2 of the second mask M2 held by the second
substage 63 by using the Z driving mechanism 67 of the second
substage-driving device 66. The relationship between the position
of the second pattern formation surface K2 and the position of the
second image plane IS2 (for example, the relationship between the
movement amount of the second pattern formation surface K2 and the
change amount of the second image plane IS2) can be also determined
by using the spatial image-measuring instrument 162.
[0170] The controller 30 can also determine in advance, for
example, the relationship between the positions of the first and
second pattern formation surfaces K1, K2 and the positions of the
first and second image planes IS1, IS2 by using, for example,
simulation or the like, on the basis of the optical characteristic
(imaging characteristic) of the projection optical system PL.
[0171] The relationship between the positions of the first and
second pattern formation surfaces K1, K2 and the positions of the
first and second image planes IS1, IS2 is stored in the controller
30.
[0172] Next, an explanation will be made with reference to a flow
chart shown in FIG. 11 about a method for exposing the substrate P
by using the exposure apparatus EX constructed as described
above.
[0173] At first, the controller 30 determines the position of the
first image plane IS1 and the position of the second image plane
IS2 at the initial state (for example, immediately after the first
mask M1 and the second mask M2 are placed on the mask stage 60)
(Step SA1). As described above, the positions in the Z axis,
.theta.X, and .theta.Y directions of the first image plane IS1 and
the second image plane IS2 at the initial state are detected
respectively by detecting the spatial image of the measuring mark
formed on the first pattern formation surface K1 and the spatial
image of the measuring mark formed on the second pattern formation
surface K2 by using the spatial image-measuring instrument 162
provided for the measuring stage 90.
[0174] Next, the controller 30 adjusts at least one of the position
of the first image plane IS1 and the position of the second image
plane IS2 (Step SA2). More specifically, the controller 30 moves at
least one of the first pattern formation surface K1 and the second
pattern formation surface K2 by controlling the Z driving mechanism
67 to adjust at least one of the position of the first image plane
IS1 and the position of the second image plane IS2. In this
embodiment, the controller 30 adjusts for example, the position of
the first image plane IS1 so that the first image plane IS1 and the
second image plane IS2 are substantially parallel to the XY plane,
and that the positions of the first image plane IS1 and the second
image plane IS2 in the Z axis direction are substantially
coincident with each other. That is, in this embodiment, the
adjustment is performed such that the first image plane IS1 and the
second image plane IS2 are formed in a same plane, and that the
position of the first image plane IS1 is matched to the position of
the second image plane IS2. However, only the position of the
second image plane IS2 may be adjusted, or the positions of both of
the first image plane IS1 and the second image plane IS2 may be
adjusted, so that the first image plane IS1 and the second image
plane IS2 are formed in the same plane. At least one of the
position of the first image plane IS1 and the position of the
second image plane IS2 may be adjusted by using at least one of the
first and second imaging characteristic-adjusting devices LC1, LC2
instead of using the Z driving mechanism 67, or to be used together
with the Z driving mechanism 67. The positions (positions in the Z
axis, .theta.X, and .theta.Y directions) of the first image plane
IS1 and the second image plane IS2 after the adjustment are stored
in the memory 31. The positions of the first and second image
planes IS1, IS2 may be measured again after the adjustment, and the
measured positions may be stored in the memory 31. When only one of
the positions of the first and second image planes IS1, IS2 is
adjusted during the adjustment as described above, it is also
allowable to only measure the position of the image plane of one of
the first image plane IS1 and the second image plane IS2.
[0175] The controller 30 moves the substrate stage 80 to a
substrate-exchange position (loading position) separated and away
from the projection optical system PL concurrently with at least a
part or parts of Step SA1 and Step SA2 described above.
[0176] FIG. 12 schematically shows those disposed in the vicinity
of the substrate-exchange position RP. As shown in FIG. 12, the
controller 30 leads at the substrate-exchange position RP the
substrate P to be subjected to the exposure onto the substrate
stage 80 by using a transport system 300.
[0177] Subsequently, the controller 30 obtains the surface
information about the substrate P held by the substrate holder 80H
of the substrate stage 80 by using the focus/leveling-detecting
system 130 (Step SA3). As shown in FIG. 12, the
focus/leveling-detecting system 130 is arranged away from the
projection optical system PL. In this embodiment, the
focus/leveling-detecting system 130 is arranged between the
substrate-exchange position RP and an exposure process position EP
disposed just below the projection optical system PL. The
focus/leveling-detecting system 130 obtains the surface information
about the substrate P before starting the exposure operation for
the substrate P.
[0178] As described above, the focus/leveling-detecting system 130
of this embodiment is provided with the light-emitting system 131
which radiates the detecting light beam La onto the surface of the
substrate P, and the light-receiving system 132 which is capable of
receiving the reflected light beam of the detecting light beam La
radiated onto the surface of the substrate P. The
focus/leveling-detecting system 130 is capable of determining the
position information about the surface of the substrate P onto
which the detecting light beam La is radiated, on the basis of the
light-receiving result of the light-receiving system 132. In this
embodiment, the focus/leveling-detecting system 130 outputs the
positional relationship between the position of the first image
plane IS1 adjusted in Step SA2 and the position of the surface of
the substrate P (information about the positional deviation of the
surface of the substrate P with respect to the first image plane
IS1). In this embodiment, the adjustment is made in Step SA2 so
that the first image plane IS1 and the second image plane IS2 are
positioned on the same plane. Therefore, the surface information
about the substrate P obtained by using the
focus/leveling-detecting system 130 is also the positional
relationship between the second image plane IS2 and the surface of
the substrate P (information about the positional deviation of the
surface of the substrate P with respect to the second image plane
IS2).
[0179] It is possible to confirm whether or not the
focus/leveling-detecting system 130 outputs the positional
relationship between the first image plane IS1 adjusted in Step SA2
and the surface of the substrate P (information about the
positional deviation of the surface of the substrate P with respect
to the first image plane IS1) by determining the position
information about the reference reflecting surface formed on the
upper surface of the plate member 50' used to detect the positions
of the first and second image planes IS1, IS2 with the
focus/leveling-detecting system 130.
[0180] The focus/leveling-detecting system 130 may output the
positional relationship between the second image plane IS2 adjusted
in Step SA2 and the surface of the substrate P (information about
the positional deviation of the surface of the substrate P with
respect to the second image plane IS2), or the
focus/leveling-detecting system 130 may output the positional
relationship between the surface of the substrate P and any
reference surface with a known surface positional relationship with
respect to the first image plane IS1 and the second image plane IS2
(surface information about the surface of the substrate P with
respect to the reference surface).
[0181] The controller 30 radiates the detecting light beam La onto
the surface of the substrate P from the light-emitting system 131
of the focus/leveling-detecting system 130 while moving the
substrate stage 80 which holds the substrate P in the XY directions
while measuring the position information about the substrate stage
80 by using the measuring system 70 (laser interferometer 75). The
reflected light beam of the detecting light beam La reflected by
the surface of the substrate P is received by the light-receiving
system 132. That is, the controller 30 moves the substrate stage 80
so that the detecting light beam La from the
focus/leveling-detecting system 130 is radiated onto the
substantially entire region of the surface of the substrate P, and
the reflected light beam of the detecting light beam La reflected
by the surface of the substrate P is received by the
light-receiving system 132. Accordingly, the controller 30 can
determine the surface information about the substrate P on the
basis of the light-receiving result of the light-receiving system
132 of the focus/leveling-detecting system 130. As described above,
the surface information about the substrate P includes the position
information about the surface of the substrate P (positional
deviation information in the Z axis, .theta.X, and .theta.Y
directions about the surface of the substrate P with respect to the
first image plane IS1) and the information about the shape of the
surface of the substrate P (irregularity information about the
surface of the substrate P with respect to the first image plane
IS1).
[0182] The position information about the substrate table 80T
during the operation for obtaining the surface information about
the substrate P by the focus/leveling-detecting system 130 is
measured by the encoders 84A, 84B, 84C provided for the substrate
stage 80. The controller 30 can obtain the surface information
about the substrate P with respect to the first image plane IS1 on
the basis of the detection result of the focus/leveling-detecting
system 130 and the measurement results of the encoders 84A, 84B,
84C. In this embodiment, it is preferable that the surface
information is determined on the substantially entire region of the
substrate P. However, it is also enough that the surface
information is determined about only a part of the substrate P.
[0183] Next, the controller 30 determines a movement profile in the
Z axis direction of the first substage 62 which holds the first
mask M1 during the exposure for the substrate P (for example,
information indicating the relationship between the position in the
Y axis direction of the first mask M1 and a target position in the
Z axis direction of the first substage 62); a movement profile in
the Z axis direction of the second substage 63 which holds the
second mask M2 during the exposure for the substrate P (for
example, information indicating the relationship between the
position in the Y axis direction of the second mask M2 and the
target position in the Z axis direction of the second substage 63);
and a movement profile in the Z axis direction of the substrate
stage 80 which holds the substrate P during the exposure for the
substrate P (for example, information indicating the relationship
between a position of the substrate P in the XY coordinate system
and a target position of the substrate stage 80 in the Z axis
direction), before starting the exposure for the shot area S on the
substrate P on the basis of the position information about the
first and second image planes IS1, IS2 and the surface information
about the substrate P (Step SA4).
[0184] That is, the controller 30 determines, on the basis of the
position information about the first and second image planes IS1,
IS2 and the surface information about the substrate P, a position
adjustment amount in the Z axis direction for the first image plane
IS1 and the second image plane IS2 and/or the surface of the
substrate P so that the first image plane IS1 and the surface of
the substrate P are in the predetermined positional relationship in
the first exposure area AR1 and the second image plane IS2 and the
surface of the substrate P are in the predetermined positional
relationship in the second exposure area AR2 during the multiple
exposure for each of the shot areas on the substrate P. The
determined position adjustment amount can be used to adjust the
surface positional relationship between the first image plane IS1
and the surface of the substrate P and the surface positional
relationship between the second image plane IS2 and the surface of
the substrate P respectively. The position adjustment amount may
also include at least one of the position adjustment amounts in the
.theta.X and .theta.Y directions, in addition to in the Z-axis
direction.
[0185] In the first embodiment, the controller 30 adjusts the
positional relationship between the surface of the substrate P and
the first image plane IS1 in the first exposure area AR1 only by
the positional adjustment for the first image plane IS1; and the
controller 30 adjusts the positional relationship between the
surface of the substrate P and the second image plane IS2 in the
second exposure area AR2 only by the positional adjustment for the
surface of the substrate P. That is, in this embodiment, the
controller 30 moves the first image plane IS1 so that the first
image plane IS1 and the surface of the substrate P are in the
predetermined positional relationship in the first exposure area
AR1 on the basis of the surface information about the substrate P
determined in Step SA3, and the controller 30 moves the surface of
the substrate P so that the second image plane IS2 and the surface
of the substrate P are in the predetermined positional relationship
in the second exposure area AR2.
[0186] An explanation will now be made about a method for adjusting
the surface positional relationship between the positions of the
first and second image planes IS1, IS2 and the position of the
surface of the substrate P according to this embodiment with
reference to schematic drawings shown in FIGS. 13A, 13B, and 14.
FIGS. 13A and 13B schematically show an example of the surface
positional relationship among the first image plane IS1, the second
image plane IS2, and the surface of the substrate P. FIG. 14
schematically shows an example of the exposure apparatus EX in a
state in which the surface positional relationship is adjusted for
the first and second image planes IS1, IS2 and the surface of the
substrate P during the multiple exposure for the shot area S on the
substrate P.
[0187] FIG. 13A schematically shows the relationship between the
positions of the first and second image planes IS1, IS2 and the
surface of the substrate P when the first and second pattern
formation surfaces K1, K2 are arranged at the predetermined
positions in the Z axis direction (in the same plane) immediately
after Step SA2 described above. Although not shown in FIG. 13A, the
horizontal axis indicates the position in the Y axis direction
(scanning direction), and the vertical axis indicates the position
in the Z axis direction (this assumption is applied to FIG. 13B as
well). In the state shown in FIG. 13A, the surface positional
relationship is not adjusted for the first image plane IS1, the
second image plane IS2, and the surface of the substrate P. As
shown in FIG. 13A, the position in the Z axis direction differs
between a partial area of the surface of the substrate P desired to
be matched to the first image plane IS1 in the first exposure area
AR1 and another partial area of the surface of the substrate P
which is desired to be matched to the second image plane IS2 in the
second exposure area AR2. In this embodiment, the controller 30
moves the first image plane IS1 and the substrate P so that the
first image plane IS1 and the surface of the substrate P are
matched to each other or consistent with each other in the first
exposure area AR1, and that the second image plane IS2 and the
surface of the substrate P are matched to each other or consistent
with each other in the second exposure area AR2.
[0188] That is, as shown in FIG. 13B, the controller 30 moves the
first image plane IS1 in the Z axis direction so that the first
image plane IS1 and the surface of the substrate P are matched to
each other in the first exposure area AR1, and the controller 30
moves the substrate P in the Z axis direction so that the second
image plane IS2 and the surface of the substrate P are matched to
each other in the second exposure area AR2. In the example shown in
FIG. 13B, the first image plane IS1 is moved in the -Z direction
from the state shown in FIG. 13A, and the surface of the substrate
P is moved in the +Z direction from the state shown in FIG.
13A.
[0189] In order to adjust the position of the first image plane IS1
in the Z axis direction, the controller 30 moves the first substage
62 which holds the first mask M1 in the Z axis direction. That is,
the controller 30 controls the first substrate 62 to adjust the
position in the Z axis direction of the first pattern formation
surface K1 of the first mask M1 as schematically shown in FIG. 14.
The position of the first image plane IS1 can be moved in the -Z
direction as shown in FIG. 13B by moving the first pattern
formation surface K1 of the first mask M1 in the -Z direction from
the predetermined position indicated by broken lines as shown in
FIG. 14. The controller 30 can provide the desired positional
relationship for the surface of the substrate P and the first image
plane IS1 in the first exposure area AR1 by adjusting the position
in the Z axis direction of the first pattern formation surface K1
to adjust the position of the first image plane IS1 in the Z axis
direction.
[0190] The controller 30 can provide the desired positional
relationship for the surface of the substrate P and the second
image plane IS2 in the second exposure area AR2 by controlling the
substrate stage 80 to adjust the position of the surface of the
substrate P in the Z axis direction. In this embodiment, the
controller 30 makes the control such that the position in the Z
axis direction of the second substage 63 which holds the second
mask M2 is substantially unmoved.
[0191] The relationship between the position of the first pattern
formation surface K1 and the position of the first image plane IS1
is previously stored in the controller 30. The positions of the
first image plane IS1 and the second image plane IS2 before the
start of the exposure for the substrate P are measured in Step SA1,
and are adjusted in Step SA2. The positions of the first and second
image planes IS1, IS2 after the adjustment are also stored in the
controller 30. The surface information of the substrate P is
determined in Step SA3. Therefore, the controller 30 can know an
appropriate extent of the movement of the first pattern formation
surface K1 of the first mask M1 in the Z axis direction in order
that the first image plane IS1 is matched to the surface of the
substrate P in the first exposure area AR1 on the basis of the
results of Steps SA1, SA2, and SA3. Similarly, the controller 30
can know an appropriate extent of the movement of the surface of
the substrate P in the Z axis direction in order that the surface
of the substrate P is matched to the second image plane IS2 in the
second exposure area AR2 on the basis of the results of Steps SA1,
SA2, and SA3.
[0192] The explanation has been made above with reference to FIGS.
13A, 13B, and 14 about the method for adjusting the surface
positional relationship between the first and second image planes
IS1, IS2 and the surface of the substrate P according to this
embodiment. The controller 30 of this embodiment determines the
amounts of positional adjustment of the first image plane IS1 and
the surface of the substrate P during the scanning exposure so that
the first image plane IS1 and the surface of the substrate P are in
the desired positional relationship in the first exposure area AR1,
and that the second image plane IS2 and the surface of the
substrate P are in the desired positional relationship in the
second exposure area AR2 during the scanning exposure for the shot
area S of the substrate P. That is, in this step (Step SA4), the
controller 30 determines the movement profile in the Z axis
direction of the first substage 62 which holds the first mask M1
during the exposure for the substrate P, the movement profile in
the Z axis direction of the second substage 63 which holds the
second mask M2 during the exposure for the substrate P, and the
movement profile in the Z axis direction of the substrate stage 80
which holds the substrate P during the exposure for the substrate
P, before the start of the exposure for the shot area S on the
substrate P on the basis of the position information about the
first and second image planes IS1, IS2 and the surface information
about the substrate P.
[0193] The exposure apparatus EX of this embodiment successively
performs the multiple exposure for each of the plurality of shot
areas S(S1 to S21) on the substrate P with the image of the first
pattern PA1 and the image of the second pattern PA2 while
synchronously moving the first mask M1, the second mask M2, and the
substrate P in the Y axis direction. Therefore, the controller 30
prepares the movement profiles in the Z axis direction of the first
substage 62, the second substage 63, and the substrate stage 80 for
each of the shot areas on the substrate P.
[0194] FIGS. 15A, 15B schematically show an example of the
relationship among the surface information of the substrate P, the
movement profile in the Z axis direction of the first substage 62,
and the movement profile in the Z axis direction of the substrate
table 80T. As described above, in this embodiment, the second
substage 63 is not moved in the Z axis direction during the
exposure for the substrate P. Therefore, the movement profile in
the Z axis direction of the second substage 63 is not shown in
FIGS. 15A and 15B. FIG. 15A shows the surface information about one
shot area S of the substrate P (distribution of positions in the Z
axis direction of the surface of the substrate P in relation to the
Y axis direction). FIG. 15B shows the movement profile in the Z
axis direction of the substrate table 80T during the scanning
exposure for the shot area S, and the movement profile in the Z
axis direction of the first substage 62. FIGS. 15A and 15B shows a
state in which the exposure is performed while moving the shot area
S on the substrate P in the -Y direction with respect to the first
and second exposure areas AR1, AR2.
[0195] As shown in FIGS. 15A and 15B, the controller 30 determines
the movement profile of the first substage 62 in the Z axis
direction when the main stage 61 and the substrate stage 80 are
synchronously moved in the Y axis direction so that the first image
plane IS1 is matched to the surface of the substrate P in the first
exposure area AR1 during the scanning exposure for the shot area S
of the substrate P. Further, the controller 30 determines the
movement profile of the substrate stage 80 in the Z axis direction
when the main stage 61 and the substrate stage 80 are synchronously
moved in the Y axis direction so that the surface of the substrate
P is matched to the second image plane IS2 in the second exposure
area AR2 during the scanning exposure for the shot area S of the
substrate P.
[0196] In FIG. 15B, a point of time, at which the projection of the
image of the first pattern PA1 with the first exposure light beam
EL1 onto the shot area S on the substrate P is started, is regarded
as the origin. The movement of the substrate stage 80 in the Z axis
direction is started to allow the surface of the substrate P to be
matched to the second image plane IS2 in the second exposure area
AR2 with a delay of the time .DELTA.T corresponding to the movement
velocity of the substrate stage 80 in the Y axis direction and the
distance between the first exposure area AR1 and the second
exposure area AR2.
[0197] The controller 30 starts the multiple exposure for the shot
area S on the substrate P with the image of the first pattern PA1
and the image of the second pattern PA2 while controlling the mask
stage 60 and the substrate stage 80 on the basis of the movement
profiles determined in Step SA4 (Step SA5).
[0198] The projection position of the image of the first pattern
PA1, the projection position of the image of the second pattern
PA2, and the positions of the respective shot areas on the
substrate P (positional relationship between each of the shot areas
and the respective projection positions) are determined in the XY
coordinate system defined by the measuring system 70 by using the
first detecting system 10 and the second detecting system 20 prior
to the exposure for the substrate P. The multiple exposure is
performed for each of the shot areas while adjusting the positional
relationship among the image of the first pattern PA1, the image of
the second pattern PA2, and the substrate P during the exposure for
each of the shot areas on the substrate P.
[0199] The controller 30 synchronously moves the main stage 61 and
the substrate stage 80 in the Y axis direction while moving the
first substage 62 in the Z axis direction by using the Z driving
mechanism 67 of the first substage-driving device 65 on the basis
of the movement profile determined in Step SA4 so that the first
image plane IS1 is matched to the surface of the substrate P in the
first exposure area AR1 during the scanning exposure for the shot
area S of the substrate P. Further, the controller 30 synchronously
moves the main stage 61 and the substrate stage 80 in the Y axis
direction while moving the substrate table 80T in the Z axis
direction by using the Z driving mechanism 82 of the substrate
stage-driving device 80D on the basis of the movement profile
determined in Step SA4 so that the surface of the substrate P is
matched to the second image plane IS2 in the second exposure area
AR2 during the scanning exposure for the shot area S of the
substrate P.
[0200] The controller 30 performs the scanning exposure for the
shot area S on the substrate P while measuring the position
information about the first mask M1 (first pattern formation
surface K1) by using the Z measuring device 70A (first mask
measuring device 171) provided for the mask stage 60 and measuring
the position information about the substrate table 80T (surface of
the substrate P) by using the encoders 84A, 84B, 84C provided for
the substrate stage 80. The controller 30 exposes the shot area S
on the substrate P while adjusting the position of the first mask
M1 by using the Z driving mechanism 67 of the first
substage-driving device 65 on the basis of the measurement result
of the Z measuring device 70A (first mask measuring device 171) by
using the movement profile determined in Step SA3 as the target
value and adjusting the position of the substrate P by using the Z
driving mechanism 82 of the substrate stage-driving device 80D on
the basis of the measurement results of the encoders 84A, 84B, 84C.
With this, the controller 30 can perform the multiple exposure for
the shot area S on the substrate P while providing the desired
states of the surface positional relationship between the surface
of the substrate P and the first image plane IS1 in the first
exposure area AR1 and the surface positional relationship between
the surface of the substrate P and the second image plane IS2 in
the second exposure area AR2.
[0201] It is also possible to adjust the relative inclination
(adjust the position in the .theta.X and .theta.Y directions)
between the first and second image planes IS1, IS2 and the surface
of the substrate P during the scanning exposure for the shot area S
of the substrate P. In this case, it is appropriate that the
movement profiles in the .theta.X and .theta.Y directions of the
first substage 62, the second substage 63, and the substrate stage
80 are prepared in Step SA4.
[0202] For example, when the surface of the substrate P is inclined
with respect to the first image plane IS1 in the first exposure
area AR1, the controller 30 can match the first image plane IS1
with respect to the surface of the substrate P in the first
exposure area AR1 by inclining the first pattern formation surface
K1 by using the Z driving mechanism 67 of the first
substage-driving device 65 depending on the inclination information
about the surface of the substrate P (position information in the
.theta.X and .theta.Y directions) and the position information
about the first image plane IS1 in the .theta.X and .theta.Y
directions.
[0203] Further, the controller 30 can incline the surface of the
substrate P by inclining the substrate table 80T by using the Z
driving mechanism 82 depending on the position information in the
.theta.X and .theta.Y directions about the surface of the substrate
P and the second image plane IS2 so that the surface of the
substrate P is matched to the second image plane IS2 in the second
exposure area AR2.
[0204] As explained above, the shot area S of the substrate P can
be subjected to the multiple exposure efficiently by radiating the
first exposure light beam EL1 and the second exposure light beam
EL2 onto the first exposure area AR1 and the second exposure area
AR2 respectively and by moving the substrate P in the Y axis
direction so that the shot area S on the substrate P passes across
the first exposure area AR1 and the second exposure area AR2. In
this embodiment, each of the plurality of shot areas S on the
substrate P is processed such that each of shot areas S can be
subjected to the multiple exposure (double exposure) with the image
of the first pattern PA1 and the image of the second pattern PA2 by
one time of the scanning operation, thereby making it possible to
improve the throughput. The plurality of shot areas S on the
substrate P can be efficiently subjected to the multiple exposure
by repeating the scanning operation in the -Y direction and the
scanning operation in the +Y direction for the substrate P. The
image of the first pattern PA1 and the image of the second pattern
PA2 can be formed in the desired positional relationship in each of
the shot areas S, because each of the shot areas S can be subjected
to the multiple exposure by one time of the scanning operation.
[0205] In this embodiment, the shot area S of the substrate P is
subjected to the multiple exposure by adjusting the surface
positional relationship among the first image plane IS1, the second
image plane IS2, and the surface of the substrate P. Therefore,
even when the position of the surface of the substrate P differs
between the first and second exposure areas AR1, AR2, the first
image plane IS1 and the surface of the substrate P can be in the
desired positional relationship in the first exposure area AR1, and
the second image plane IS2 and the surface of the substrate P can
be in the desired positional relationship in the second exposure
area AR2. Therefore, it is possible to form the desired pattern on
the substrate P.
[0206] In this embodiment, the adjustment of the positional
relationship between the surface of the substrate P and the second
image plane IS2 in the second exposure area AR2 is executed only by
the adjustment of the surface position of the substrate P (movement
of the substrate stage 80); and the adjustment of the positional
relationship between the surface of the substrate P and the first
image plane in the first exposure area AR1 is executed only by the
positional adjustment of the first pattern formation surface K1 of
the first mask M1 in the first illumination area IA1 conjugate with
the first exposure area AR1. Therefore, the image planes (IS1, IS2)
and the surface of the substrate P can be matched to one another or
consistent with each other by the relatively easy control in both
of the first and second exposure areas AR1, AR2.
[0207] In this embodiment, the first exposure light beam EL1
radiated onto the first exposure area AR1 and the second exposure
light beam EL2 radiated onto the second exposure area AR2 are
radiated onto the substrate P via one final optical element FL.
Therefore, it is possible to simplify the structure of the
projection optical system PL. In addition, since the first exposure
area AR1 and the second exposure area AR2 are defined at the
different positions in the field of the projection optical system
PL, the first exposure light beam EL1 from the first mask M1 and
the second exposure light beam EL2 from the second mask M2 can be
guided to the third optical system 43 by arranging the reflecting
surfaces 40A, 40B in the vicinity of the positions optically
conjugate with the first and second exposure areas AR1, AR2. Thus,
the first exposure light beam EL1 and the second exposure light
beam EL2 can be radiated onto the first and second exposure areas
AR1, AR2 respectively.
[0208] In this embodiment, the adjustment of the positional
relationship between the surface of the substrate P and the first
image plane IS1 in the first exposure area AR1 is performed only by
the positional adjustment of the first image plane IS1 effected by
the positional adjustment of the first pattern formation surface
K1; and the adjustment of the positional relationship between the
surface of the substrate P and the second image plane IS2 in the
second exposure area AR2 is performed only by the positional
adjustment of the surface of the substrate P. However, the
adjustment of the positional relationship between the surface of
the substrate P and the first image plane IS1 in the first exposure
area AR1 may be performed only by the positional adjustment of the
surface of the substrate P; and the adjustment of the positional
relationship between the surface of the substrate P and the second
image plane IS2 in the second exposure area AR2 may be performed
only by the positional adjustment of the second image plane IS2
effected by the positional adjustment of the second pattern
formation surface K2 using the second substage-driving device 66.
In this case, for example, the controller 30 can adjust the
position of the second mask M2 (second pattern formation surface
K2) by using the Z driving mechanism 67 of the second
substage-driving device 66 while detecting the position information
about the second pattern formation surface K2 of the second mask M2
by using the Z measuring device 70A (second mask measuring device
172). Further, in this case, the controller 30 can incline the
second pattern formation surface K2 by using the Z driving
mechanism 67 of the second substage-driving device 66 depending on
the inclination information about the surface of the substrate P in
the second exposure area AR2 during the scanning exposure for the
shot area S of the substrate P; and the controller 30 can incline
the surface of the substrate P by using the Z driving mechanism 82
of the substrate stage 80 so that the surface of the substrate P is
matched to the first image plane IS1 in the first exposure area
AR1. In this embodiment, the position (and the inclination) of the
image plane may be adjusted in one of the first and second exposure
areas AR1, AR2, and the position (and the inclination) of the
substrate may be adjusted in the other of the first and second
exposure areas AR1, AR2 so that the surface of the substrate is
arranged within the depth of focus of the projection optical system
in the first and second exposure areas AR1, AR2 respectively. That
is, it is also allowable that the surface of the substrate is not
matched to the image plane in at least one of the first and second
exposure areas AR1, AR2.
Second Embodiment
[0209] The second embodiment will be explained. In the first
embodiment described above, the controller 30 performs the
adjustment of the positional relationship between the surface of
the substrate P and the first image plane IS1 in the first exposure
area AR1 only by the positional adjustment of the first image plane
IS1, and the controller 30 performs the adjustment of the
positional relationship between the surface of the substrate P and
the second image plane IS2 only by the positional adjustment of the
surface of the substrate P. However, the feature of the second
embodiment is that the controller 30 performs the adjustment of the
positional relationship between the surface of the substrate P and
the first image plane IS1 in the first exposure area AR1 and the
adjustment of the positional relationship between the surface of
the substrate P and the second image plane IS2 in the second
exposure area AR2 only by the positional adjustment of the first
image plane IS1 and the second image plane IS2 without performing
the positional adjustment of the surface of the substrate P.
[0210] In the following description, the constitutive parts or
components, which are same as or equivalent to those of the
embodiment described above, are designated by the same reference
numerals, any explanation of which will be simplified or
omitted.
[0211] FIGS. 16A and 16B schematically illustrate a method for
adjusting the surface positional relationship among the first and
second image planes IS1, IS2 and the surface of the substrate P
according to the second embodiment. FIG. 16A schematically shows
the positional relationship among the positions of the first and
second image planes IS1, IS2 and the surface of the substrate P in
the same manner as FIG. 13A. The surface positional relationship
among the first and second image planes IS1, IS2 and the surface of
the substrate P is not adjusted in the state shown in FIG. 16A.
[0212] In this embodiment, as shown in FIG. 16B, the controller 30
moves the first image plane IS1 in the Z axis direction so that the
first image plane IS1 and the surface of the substrate P are
matched to each other in the first exposure area AR1, and the
controller 30 moves the second image plane IS2 in the Z axis
direction so that the second image plane IS2 and the surface of the
substrate P are matched to each other in the second exposure area
AR2. In the example shown in FIG. 16B, the first image plane IS1 is
moved in the -Z direction from the state shown in FIG. 16A, and the
second image plane IS2 is also moved in the -Z direction from the
state shown in FIG. 16A.
[0213] The controller 30 moves the first substage 62 which holds
the first mask M1 in the Z axis direction in order to adjust the
position of the first image plane IS1 in the Z axis direction in
the first exposure area AR1. That is, the controller 30 controls
the first substage 62 to adjust the position of the first pattern
formation surface K1 of the first mask M1 in the Z axis direction.
The controller 30 moves the second substage 63 which holds the
second mask M2 in the Z axis direction in order to adjust the
position of the second image plane IS2 in the Z axis direction in
the second exposure area AR2. That is, the controller 30 controls
the second substage 63 to adjust the position of the second pattern
formation surface K2 of the second mask M2 in the Z axis direction.
In this embodiment, the controller 30 controls the substrate stage
80 so that the position in the Z axis direction of the surface of
the substrate P is substantially unmoved. Accordingly, the
controller 30 can provide the desired positional relationship
between the surface of the substrate P and the first image plane
IS1 in the first exposure area AR1, and the controller 30 can
provide the desired positional relationship between the surface of
the substrate P and the second image plane IS2 in the second
exposure area AR2.
[0214] The controller 30 prepares the movement profiles in the Z
axis direction of the first substage 62, the second substage 63,
and the substrate stage 80 prior to the scanning exposure for the
substrate P in the same manner as in the first embodiment described
above. The controller 30 determines the movement profile of the
first substage 62 in the Z axis direction so that the first image
plane IS1 is matched to the surface of the substrate P in the first
exposure area AR1 during the scanning exposure for the shot area S
of the substrate P. Further, the controller 30 determines the
movement profile of the second substage 63 in the Z axis direction
so that the second image plane IS2 is matched to the surface of the
substrate P in the second exposure area AR2 during the scanning
exposure for the shot area S of the substrate P. When the movement
profiles of the first and second substages 62, 63 are determined,
the position information about the first and second image planes
IS1, IS2 and the surface information about the substrate P are
used. The movement profile of the substrate stage 80 is determined
so that the position of the surface of the substrate P in the Z
axis direction is not changed during the exposure for the substrate
P.
[0215] The controller 30 performs the multiple exposure for the
shot area S on the substrate P with the image of the first pattern
PA1 and the image of the second pattern PA2 while controlling the
mask stage 60 and the substrate stage 80 on the basis of the
determined movement profiles.
[0216] Also in this embodiment, the adjustment of the relative
inclination of the first and second image planes IS1, IS2 and the
surface of the substrate P (positional adjustment in the .theta.X
and .theta.Y directions) can be performed during the scanning
exposure for the shot area S of the substrate P.
[0217] Also in this embodiment, even when the position of the
surface of the substrate P differs between the first and second
exposure areas AR1, AR2, the desired positional relationship can be
provided between the surface of the substrate P and the first image
plane IS1 in the first exposure area AR1, and the desired
positional relationship can be provided between the surface of the
substrate P and the second image plane IS2 in the second exposure
area AR2. Therefore, it is possible to form the desired pattern on
the substrate P. Also in this embodiment, the positions (and the
inclinations) of the first and second image planes IS1, IS2 may be
adjusted so that the surface of the substrate is arranged within
the depth of focus of the projection optical system PL in the first
and second exposure areas AR1, AR2 respectively. That is, it is
also allowable that the image plane is not matched to the surface
of the substrate in at least one of the first and second exposure
areas AR1, AR2.
Third Embodiment
[0218] The third embodiment will be explained. The feature of this
embodiment is that the controller 30 performs the adjustment of the
positional relationship between the surface of the substrate P and
the first image plane IS1 in the first exposure area AR1 and the
adjustment of the positional relationship between the surface of
the substrate P and the second image plane IS2 in the second
exposure area AR2 only by the positional adjustment of the surface
of the substrate P without performing the positional adjustment of
the first image plane IS1 and the second image plane IS2. In the
following description, the constitutive parts or components, which
are the same as or equivalent to those of the embodiment described
above, are designated by the same reference numerals, any
explanation of which will be simplified or omitted.
[0219] FIGS. 17A and 17B schematically illustrate a method for
adjusting the surface positional relationship among the first and
second image planes IS1, IS2 and the surface of the substrate P
according to the third embodiment. FIG. 17A schematically shows the
relationship among the positions of the first and second image
planes IS1, IS2 and the surface of the substrate P in the same
manner as FIG. 13A. The surface positional relationship among the
first and second image planes IS1, IS2 and the surface of the
substrate P is not adjusted in the state shown in FIG. 17A.
[0220] In this embodiment, as shown in FIG. 17B, the controller 30
adjusts the position of the surface of the substrate P so that the
first image plane IS1 and the surface of the substrate P are
matched to each other in the first exposure area AR1. In the
example shown in FIG. 17B, the surface of the substrate P is moved
in the +Z direction from the state shown in FIG. 17A.
[0221] The controller 30 controls the substrate stage 80 to adjust
the position of the surface of the substrate P in the Z axis
direction in the first exposure area AR1. In this embodiment, the
controller 30 controls the first and second substages 62, 63 so
that the positions of the first image plane IS1 and the second
image plane IS2 are not changed, and that the position in the Z
axis direction of the first substage 62 which holds the first mask
M1 and the position in the Z axis direction of the second substage
63 which holds the second mask M2 are substantially unmoved.
Accordingly, the controller 30 can match the first image plane IS1
and the surface of the substrate P in the first exposure area AR1.
Further, the predetermined positional relationship can be provided
between the second image plane IS2 and the surface of the substrate
P in the second exposure area AR2.
[0222] The controller 30 prepares the movement profiles in the Z
axis direction of the first substage 62, the second substage 63,
and the substrate stage 80 prior to the scanning exposure for the
substrate P in the same manner as in the respective embodiments
described above. The controller 30 determines the movement profile
of the substrate stage 80 (substrate table 80T) in the Z axis
direction so that the first image plane IS1 is matched to the
surface of the substrate P in the first exposure area AR1 during
the scanning exposure for the shot area S of the substrate P. The
movement profiles of the first and second substages 62, 63 are
determined so that the positions of the first image plane IS1 and
the second image plane IS2 in the Z axis direction are not changed
during the scanning exposure for the shot area S of the substrate
P.
[0223] The controller 30 performs the multiple exposure for the
shot area S on the substrate P with the image of the first pattern
PA1 and the image of the second pattern PA2 while controlling the
mask stage 60 and the substrate stage 80 on the basis of the
determined movement profiles.
[0224] In this embodiment, the first image plane IS1 and the
surface of the substrate P are successfully allowed to be in the
desired positional relationship in the first exposure area AR1. The
shot area S of the substrate P can be subjected to the multiple
exposure by using the method of this embodiment, for example, when
the highly accurate adjustment of the positional relationship is
required for the first pattern PA1 between the first image plane
IS1 and the surface of the substrate P, and the highly accurate
adjustment of the positional relationship is not required for the
second pattern PA2 between the second image plane IS2 and the
surface of the substrate P, or when the projection condition
differs between the first pattern PA1 and the second pattern PA2,
and the image of the second pattern PA2 is projected with a large
depth of focus as compared with the image of the first pattern PA1,
or when the surface of the substrate P is relatively flat, and the
difference is small between the position of the surface of the
substrate P in the first exposure area AR1 and the position of the
surface of the substrate P in the second exposure area AR2. In this
embodiment, even when the position of the substrate P is adjusted
so that the first image plane IS1 and the surface of the substrate
P are matched to each other in the first exposure area AR1, the
surface of the substrate P is substantially maintained within the
depth of focus of the projection optical system PL in the second
exposure area AR2, and any defective resolution or the like is not
caused for the second pattern PA2.
[0225] In this embodiment, the positional relationship between the
first image plane IS1 and the surface of the substrate P is
adjusted by using only the substrate stage 80 in only the first
exposure area AR1. Therefore, it is possible to allow the first
image plane IS1 and the surface of the substrate P to be in the
desired state with ease. Further, in this embodiment, it is
possible to simplify the apparatus, and it is possible to realize
the low cost, for example, such that the Z driving mechanism 67 of
the second substage-driving device 66 for driving the second
substage 63 can be simplified or omitted.
[0226] In this embodiment, the positional adjustment of the surface
of the substrate P is performed so that the first image plane IS1
and the surface of the substrate P are matched to each other in the
first exposure area AR1 without performing the adjustment of the
positional relationship between the second image plane IS2 and the
surface of the substrate P in the second exposure area AR2.
However, the positional adjustment of the surface of the substrate
P may be performed so that the second image plane IS2 and the
surface of the substrate P are matched to each other in the second
exposure area AR2 without performing the adjustment of the
positional relationship between the first image plane IS1 and the
surface of the substrate P in the first exposure area AR1.
[0227] The adjustment of the positional relationship between the
image plane (IS1 or IS2) and the surface of the substrate P, which
is to be performed in one of the exposure areas (AR1 or AR2), may
be executed only by the positional adjustment of the image plane
(IS1 or IS2) without performing the positional adjustment of the
surface of the substrate P. Alternatively, the adjustment of the
positional relationship between the image plane (IS1 or IS2) and
the surface of the substrate P, which is to be performed in one of
the exposure areas (AR1 or AR2), may be executed by both of the
positional adjustment of the surface of the substrate P and the
positional adjustment of the image plane (IS1 or IS2).
[0228] Also in this embodiment, the adjustment of the relative
inclination between the image plane (IS1 or IS2) and the surface of
the substrate P (positional adjustment in the .theta.X and .theta.Y
directions) can be performed in one of the exposure areas (AR1 or
AR2). Also in this embodiment, at least one of the positions (and
the inclinations) of the image plane and the substrate may be
adjusted in one of the first and second exposure areas AR1, AR2 so
that the surface of the substrate is arranged within the depth of
focus of the projection optical system PL in the first and second
exposure areas AR1, AR2 respectively. That is, it is also allowable
that the image plane and the surface of the substrate are not
matched to each other in one of the exposure areas.
Fourth Embodiment
[0229] The fourth embodiment will be explained. The feature of this
embodiment is that the controller 30 performs the positional
adjustment of the surface of the substrate P so that an error
between the first image plane IS1 and the surface of the substrate
P in the first exposure area AR1 and an error between the second
image plane IS2 and the surface of the substrate P in the second
exposure area AR2 are approximately identical with each other. In
the following description, the constitutive parts or components,
which are the same as or equivalent to those of the embodiment
described above, are designated by the same reference numerals, any
explanation of which will be simplified or omitted.
[0230] FIGS. 18A and 18B schematically illustrate a method for
adjusting the surface positional relationship among the first and
second image planes IS1, IS2 and the surface of the substrate P
according to the fourth embodiment. FIG. 18A schematically shows
the relationship among the positions of the first and second image
planes IS1, IS2 and the surface of the substrate P in the same
manner as FIG. 13A. The surface positional relationship among the
first image plane IS1, the second image plane IS2, and the surface
of the substrate P is not adjusted in the state shown in FIG.
18A.
[0231] In this embodiment, as shown in FIG. 18B, the controller 30
moves the surface of the substrate P in the Z axis direction P so
that the error between the first image plane IS1 and the surface of
the substrate P in the first exposure area AR1 and the error
between the second image plane IS2 and the surface of the substrate
P in the second exposure area AR2 are substantially equal to one
another, to thereby perform the positional adjustment of the
surface of the substrate P. The controller 30 performs the
adjustment of the positional relationship between the first image
plane IS1 and the surface of the substrate P in the first exposure
area AR1 and the adjustment of the positional relationship between
the second image plane IS2 and the surface of the substrate P in
the second exposure area AR2 only by the positional adjustment of
the surface of the substrate P without performing the positional
adjustment of the first image plane IS1 and the second image plane
IS2.
[0232] Also in this embodiment, the positions in the Z axis
direction of the first image plane IS1 and the second image plane
IS2 are substantially identical with each other. Therefore, the
controller 30 performs the positional adjustment of the surface of
the substrate P so that an intermediate position (average position)
CT between the position in the Z axis direction of the surface of
the substrate P in the first exposure area AR1 and the position in
the Z axis direction of the surface of the substrate P in the
second exposure area AR2 is matched to the first image plane IS1
and the second image plane IS2. In the example shown in FIG. 18B,
the substrate P is moved in the +Z direction from the state shown
in FIG. 18A so that the intermediate position CT between the
position in the Z axis direction of the surface of the substrate P
in the first exposure area AR1 and the position in the Z axis
direction of the surface of the substrate P in the second exposure
area AR2 is matched to the first image plane IS1 and the second
image plane IS2.
[0233] The controller 30 controls the substrate stage 80 to adjust
the position in the Z axis direction of the surface of the
substrate P in the first exposure area AR1 and second exposure area
AR2. The controller 30 controls the first and second substages 62,
63 so that the positions of the first image plane IS1 and the
second image plane IS2 are not changed, and that the position in
the Z axis direction of the first substage 62 which holds the first
mask M1 and the position in the Z axis direction of the second
substage 63 which holds the second mask M2 are substantially
unmoved.
[0234] The controller 30 prepares the movement profiles in the Z
axis direction of the first substage 62, the second substage 63,
and the substrate stage 80 prior to the scanning exposure for the
substrate P in the same manner as in the respective embodiments
described above. The controller 30 determines the movement profile
of the substrate stage 80 in the Z axis direction so that the
intermediate position CT of the surface of the substrate P is
matched to the first and second image planes IS1, IS2 during the
scanning exposure for the shot area S of the substrate P. The
movement profiles of the first and second substages 62, 63 are
determined so that the positions of the first and second image
planes IS1, IS2 in the Z axis direction are not changed during the
scanning exposure for the shot area S of the substrate P.
[0235] The controller 30 performs the multiple exposure for the
shot area S on the substrate P with the image of the first pattern
PA1 and the image of the second pattern PA2 while controlling the
mask stage 60 and the substrate stage 80 on the basis of the
determined movement profiles.
[0236] The shot area S of the substrate P can be subjected to the
multiple exposure by using the method for adjusting the surface
position of this embodiment, for example, when the highly accurate
adjustment of the positional relationship is not required for both
of the image of the first pattern PA1 and the image of the second
pattern PA2 between the image planes (IS1, IS2) and the surface of
the substrate P, or when the surface of the substrate P is
relatively flat, and the difference is small between the position
of the surface of the substrate P in the first exposure area AR1
and the position of the surface of the substrate P in the second
exposure area AR2. In this embodiment, even when the image plane
and the surface of the substrate are not matched to each other in
the first and second exposure areas AR1, AR2 respectively, the
surface of the substrate is maintained within the depth of focus of
the projection optical system PL.
[0237] According to this embodiment, the first image plane IS1 and
the surface of the substrate P are successfully allowed to be in
the predetermined positional relationship in the first exposure
area AR1, and the second image plane IS2 and the surface of the
substrate P are successfully allowed to be in the predetermined
positional relationship in the second exposure area AR2 without
performing the positional adjustment of the first image plane IS1
and the second image plane IS2. Further, it is possible to simplify
or omit the Z driving mechanism 67 of the first and second
substage-driving devices 65, 66 for performing the positional
adjustment of the first and second image planes IS1, IS2.
[0238] Also in this embodiment, it is also allowable that the
adjustment of the relative inclination between the image plane
(IS1, IS2) and the surface of the substrate P (positional
adjustment in the .theta.X and .theta.Y directions) is performed in
the first exposure area AR1 and the second exposure area AR2. In
this embodiment, it is also allowable that the intermediate
position CT of the position of the surface of the substrate is not
matched to the first and second image planes IS1, IS2 in the first
and second exposure areas AR1, AR2.
Fifth Embodiment
[0239] The controller 30 can also perform the positional adjustment
of the first image plane IS1 and the second image plane IS2 in
addition to the positional adjustment of the surface of the
substrate P so that the state shown in FIG. 19 is obtained from the
state shown in FIG. 18B, i.e., the first image plane IS1 and the
surface of the substrate P are matched to each other in the first
exposure area AR1, and that the second image plane IS2 and the
surface of the substrate P are matched to each other in the second
exposure area AR2.
[0240] In the example shown in FIG. 19, the positions of the first
image plane IS1 and the second image plane IS2 in the Z axis
direction are adjusted respectively so that the first image plane
IS1 is consistent in the first exposure area AR1, and the second
image plane IS2 is consistent in the second exposure area AR2, in
addition to the positional adjustment of the surface of the
substrate P as explained in the fourth embodiment.
[0241] The controller 30 prepares the movement profiles in the Z
axis direction of the first substage 62, the second substage 63,
and the substrate stage 80 prior to the scanning exposure for the
substrate P in the same manner as in the respective embodiments
described above. The controller 30 determines the movement profiles
in the Z axis direction of the first substage 62, the second
substage 63, and the substrate table 80T respectively so that the
surface of the substrate P and the first image plane IS1 are
matched to each other in the first exposure area AR1, and the
surface of the substrate P and the second image plane IS2 are
matched to each other in the second exposure area AR2 during the
scanning exposure for the shot area S of the substrate P.
[0242] In this embodiment, the first image plane IS1 and the second
image plane IS2 are defined on a same plane after the initial
adjustment (immediately after Step SA2 shown in FIG. 11 of the
first embodiment). Therefore, the positional adjustment of the
surface of the substrate P is performed as shown in FIG. 18B so
that the intermediate position CT of the surface of the substrate P
is matched to the first and second image planes IS1, IS2 which are
substantially flush with each other as shown in FIG. 18A.
Additionally, as shown in FIG. 19, the positional adjustment is
performed for the first and second image planes IS1, IS2
respectively so that the first image plane IS1 is matched to the
surface of the substrate P subjected to the positional adjustment
as shown in FIG. 18B in the first exposure area AR1, and that the
second image plane IS2 is matched to the surface of the substrate P
subjected to the positional adjustment as shown in FIG. 18B in the
second exposure area AR2. That is, the positional adjustment
amounts of the first and second image planes IS1, IS2 moved from
the state shown in FIG. 18B to the state shown in FIG. 19 are
substantially equal to each other. That is, the controller 30
performs the positional adjustment of the surface of the substrate
P so that the positional adjustment amount of the first image plane
IS1 and the positional adjustment amount of the second image plane
IS2 are substantially equal to each other in the positional
adjustment from the state shown in FIG. 18A to the state shown in
FIG. 18B.
[0243] As described above, the controller 30 can also perform the
positional adjustment for the first image plane IS1, the second
image plane IS2, and the surface of the substrate P respectively in
both of the first exposure area AR1 and the second exposure area
AR2. In this embodiment, the controller 30 performs the positional
adjustment of the surface of the substrate P so that the error
between the first image plane IS1 and the surface of the substrate
P after the initial adjustment in the first exposure area AR1 is
substantially same with the error between the second image plane
IS2 and the surface of the substrate P after the initial adjustment
in the second exposure area AR2. Accordingly, the positional
adjustment amount of the first image plane IS1 is substantially
equal to the positional adjustment amount of the second image plane
IS2. By performing the positional adjustment for the first and
second image planes IS1, IS2, the surface positional relationship
between the first image plane IS1 and the surface of the substrate
P can be in the desired state in the first exposure area AR1 and
the surface positional relationship between the second image plane
IS2 and the surface of the substrate P can be in the desired state
in the second exposure area AR2.
[0244] Also in the fifth embodiment, it is possible to perform the
adjustment of the relative inclination between the image plane
(IS1, IS2) and the surface of the substrate P (positional
adjustment in the .theta.X and .theta.Y directions) in the first
and second exposure areas AR1, AR2.
[0245] In the fifth embodiment, the positional adjustment amount of
the first image plane IS1 may be different from the positional
adjustment amount of the second image plane IS2. That is, in this
embodiment, the positional relationship among the image plane IS1,
the image plane IS2, and the surface of the substrate P can be
appropriately adjusted so that the image planes (IS1, IS2) are
matched to the surface of the substrate P in the first exposure
area AR1 and the second exposure area AR2, respectively. Further,
in the fifth embodiment, it is also allowable that the image plane
and the surface of the substrate are not matched to each other in
the first and second exposure areas AR1, AR2. That is, it is also
enough that both the first and second image planes IS1, IS2 are
merely allowed to approach the surface of the substrate than the
state shown in FIG. 18B.
[0246] In the first to fifth embodiments described above, the first
image plane IS1 and the second image plane IS2 are subjected to the
positional adjustment so that the first image plane IS1 and the
second image plane IS2 are formed in the substantially same plane
in the initial adjustment (Step SA2 shown in FIG. 11 of the first
embodiment). However, the adjustment may be made such that the
first image plane IS1 and the second image plane IS2 are formed in
mutually different planes. Alternatively, it is also allowable that
the positional adjustment (Step SA2) is not performed for the first
and second image planes IS1, IS2. That is, it is also allowable
that the position in the Z axis direction differs between the first
image plane IS1 and the second image plane IS2. In this case, as
explained in Step SA1 shown in FIG. 10 of the first embodiment, the
position information (including the inclination information) is
measured for the first image plane IS1 and the second image plane
IS2 respectively, and the positional relationship therebetween is
known as well. Therefore, when the surface positional relationship
between the first image plane IS1 and the second image plane IS2 is
taken into consideration, it is possible to carry out the surface
positional adjustment as explained in the first to fifth
embodiments described above.
[0247] In the first to fifth embodiments described above, the first
exposure area AR1 and the second exposure area AR2 are separated
and away from each other in the Y axis direction. However, even
when the first exposure area AR1 and the second exposure area AR2
are partially overlapped with each other in the Y axis direction,
it is possible to carry out the surface positional adjustment as
explained in the first to fifth embodiments described above. It is
also enough that the exposure apparatus EX can execute only any one
of all of the surface positional adjustment methods as explained in
the first to fifth embodiments described above. Alternatively, it
is also allowable to select any one of the plurality of surface
positional adjustment methods depending on, for example, the
surface information about the substrate P, the characteristic or
feature of the pattern (for example, pattern line width, pattern
pitch, pattern cluster degree, and the like), the exposure
condition for the pattern (for example, dimension of the depth of
focus and the like), and the like.
[0248] In the first to fifth embodiments described above, the
controller 30 prepares the movement profiles of the first substage
62, the second substage 63, and the substrate stage 80 respectively
prior to the scanning exposure for the substrate P. However, it is
also allowable that the movement profile is not prepared for a
stage among the stages which does not perform the surface
positional adjustment operation in at least one of the directions
of the Z axis direction, the .theta.X direction, and the .theta.Y
direction (for example, the second substage 63 in the first
embodiment). It is also possible to omit the driving mechanism for
the stage which does not perform the surface positional adjustment
operation. The method for adjusting at least one of the positions
of the first and second image planes IS1, IS2 is not limited to the
positional adjustment of the mask. It is also allowable to use any
other method including, for example, the adjustment of the imaging
characteristic of the projection optical system PL or the like,
instead of the positional adjustment of the mask or in combination
with the positional adjustment of the mask.
Sixth Embodiment
[0249] The sixth embodiment will be explained. In the respective
embodiments described above, the focus/leveling-detecting system
130, which is capable of obtaining the surface information about
the substrate P, is arranged separately and away from the
projection optical system PL. However, the feature of this
embodiment is that a focus/leveling-detecting system 130' obtains
the surface information about the substrate P on the side of the
image plane of the projection optical system PL, i.e., in the
vicinity of the first and second exposure areas AR1, AR2. In this
embodiment, the focus/leveling-detecting system 130' is constructed
in substantially the same manner as the focus/leveling-detecting
system 130 described above. In the following description, the
constitutive parts or components, which are the same as or
equivalent to those of the embodiment described above, are
designated by the same reference numerals, any explanation of which
will be simplified or omitted.
[0250] FIG. 20 shows a schematic arrangement view illustrating an
exposure apparatus EX according to the sixth embodiment. As shown
in FIG. 20, the focus/leveling-detecting system 130' has a
plurality of detection points which are arranged in a predetermined
range including the exposure process position EP disposed just
below the projection optical system PL. In this embodiment, the
controller 30 performs the multiple exposure for the shot area S of
the substrate P while obtaining the surface information about the
substrate P by using the focus/leveling-detecting system 130'.
[0251] FIG. 21 schematically shows the relationship between the
radiation positions (detection points) of the detecting light beam
La of the focus/leveling-detecting system 130' and the first and
second exposure areas AR1, AR2. FIG. 21 shows a state in which the
first and second exposure areas AR1, AR2 are set on the shot area
S. A light-emitting system 131' of the focus/leveling-detecting
system 130' radiates the detecting light beam La onto the plurality
of positions on the substrate P respectively. The light-emitting
system 131' radiates the detecting light beam La onto the
substantially entire region of the shot area S. The light-emitting
system 131' also radiates the detecting light beam La onto the
inner portions of the first and second exposure areas AR1, AR2
respectively.
[0252] As described above, the focus/leveling-detecting system 130'
radiates the detecting light beam La onto the substantially entire
region of the shot area S of the substrate P. The
focus/leveling-detecting system 130' can determine the surface
information about the shot area S on the basis of the
light-receiving result. The focus/leveling-detecting system 130' of
this embodiment outputs the positional relationship between the
surface of the substrate P irradiated with the detecting light beam
La and the first image plane IS1 after the initial adjustment
(after Step SA2 shown in FIG. 11) (information about the positional
deviation of the surface of the substrate P with respect to the
first image plane IS1).
[0253] The controller 30 can obtain the surface information about
the substrate P by using the focus/leveling-detecting system 130'
concurrently with the multiple exposure operation for the substrate
P. Further, the controller 30 can perform the multiple exposure
while adjusting the surface positional relationship among the first
image plane IS1, the second image plane IS2, and the surface of the
substrate P on the basis of the detection result of the
focus/leveling-detecting system 130'.
[0254] In this embodiment, the focus/leveling-detecting system 130'
obtains the surface information about the substrate P concurrently
with the multiple exposure operation for the substrate P. However,
the surface information about the entire surface of the substrate P
may be obtained before starting the multiple exposure operation for
the substrate P. In this case, the positional relationship among
the first image plane IS1, the second image plane IS2, and the
surface of the substrate P may be adjusted in the same manner as in
the respective embodiments described above. In this embodiment, the
detection points of the focus/leveling-detecting system 130' are
arranged over the range which is approximately equivalent to the
size of the shot area S. However, it is also allowable that the
range, in which the detection points are arranged, is narrower than
the case shown in FIG. 21, and/or the number of detection points is
decreased. For example, it is also allowable that a plurality of
detection points are arranged in only the inner portions of the
first and second exposure areas AR1, AR2.
Seventh Embodiment
[0255] The seventh embodiment will be explained. FIG. 22 shows a
schematic arrangement view illustrating an exposure apparatus EX
according to this embodiment. The feature of this embodiment, which
is different from those of the respective embodiments described
above, is that the first exposure area AR1 is overlapped at least
partially with the second exposure area AR2 (is overlapped at least
a part of the second exposure area AR2). Specifically, in this
embodiment, the setting is made such that the first exposure area
AR1 and the second exposure area AR2 are set to be overlapped with
each other at a same position. In the following description, the
constitutive parts or components, which are the same as or
equivalent to those of the embodiment described above, are
designated by the same reference numerals, any explanation of which
will be simplified or omitted.
[0256] Also in this embodiment, the controller 30 illuminates the
first pattern PA1 and the second pattern PA2 with the first
exposure light beam EL1 and the second exposure light beam EL2 from
the illumination system IL respectively while moving the first mask
M1 and the second mask M2 in the same scanning direction (for
example, in the +Y direction) by using the mask stage 60 which has
the main stage 61. The controller 30 performs the scanning exposure
for the shot area S on the substrate P by moving the substrate
stage 80 which holds the substrate P in the Y axis direction in
synchronization with the movement of the first mask M1 and the
second mask M2 in the Y axis direction. The shot area S on the
substrate P is subjected to the multiple exposure (double exposure)
with the image of the first pattern PA1 formed with the first
exposure light beam EL1 radiated onto the first exposure area AR1
and the image of the second pattern PA2 formed with the second
exposure light beam EL2 radiated onto the second exposure area
AR2.
[0257] The projection optical system PL' of this embodiment is
provided with a beam splitter 124 into which the first exposure
light beam EL1 from the first mask M1 and the second exposure light
beam EL2 from the second mask M2 are allowed to come. The
projection optical system PL' includes a first imaging optical
system 120A which is provided on an optical path for the first
exposure light beam EL1 between the first mask M1 and the beam
splitter 124, a second imaging optical system 120B which is
provided on an optical path for the second exposure light beam EL2
between the second mask M2 and the beam splitter 124, and an
optical system 120C which is arranged between the beam splitter 124
and the substrate P. The first and second imaging optical systems
120A, 120B of this embodiment are 1.times. magnification imaging
optical systems. Each of the first and second imaging optical
systems 120A, 120B has the function to invert the image of the
object once.
[0258] The first imaging optical system 120A and a first reflecting
mirror 121 are provided between the first mask M1 and the beam
splitter 124. The first exposure light beam EL1 from the first mask
M1 passes through the first imaging optical system 120A, and then
the first exposure light beam EL1 comes into the beam splitter 124
via the first reflecting mirror 121. A second reflecting mirror
122, the second imaging optical system 120B, and a third reflecting
mirror 123 are provided between the second mask M2 and the beam
splitter 124. The second exposure light beam EL2 from the second
mask M2 is reflected by the second reflecting mirror 122, and then
passes through the second imaging optical system 120B. Afterwards,
the second exposure light beam EL2 is reflected by the third
reflecting mirror 123, and then comes into the beam splitter 124.
The first exposure light beam EL1 and the second exposure light
beam EL2, which are allowed to come into the beam splitter 124,
come into the optical system 120C via the beam splitter 124.
[0259] In this embodiment, the image of the first pattern PA1 is
inverted once by the first imaging optical system 120A between the
first mask M1 and the beam splitter 124. In this embodiment, the
optical system 120C inverts the image of the object once.
Therefore, the image of the first pattern PA1 is inverted twice
(even number of times) between the first mask M1 and the first
exposure area AR1. The image of the second pattern PA2 is inverted
once by the second imaging optical system 120B between the second
mask M2 and the beam splitter 120C. Therefore, the image of the
second pattern PA2 is inverted twice (even number of times) between
the second mask M2 and the second exposure area AR2.
[0260] As described above, in the projection optical system PL' of
this embodiment, the image of the first pattern PA1 is inverted an
even number of times between the first mask M1 and the first
exposure area AR1, and the image of the second pattern PA2 is
inverted an even number of times between the second mask M2 and the
second exposure area AR2. Therefore, even when the first pattern
PA1 and the second pattern PA2 are illuminated with the first
exposure light beam EL1 and the second exposure light beam EL2
respectively while moving the first mask M1 and the second mask M2
in the same scanning direction (for example, in the +Y direction),
desired images of the first and second patterns PA1, PA2 can be
projected onto the shot area S on the substrate P.
[0261] FIG. 23 shows the positional relationship among the first
exposure area AR1, the second exposure area AR2, and the shot area
S according to the seventh embodiment. As shown in FIG. 23, in this
embodiment, the setting is made such that the first exposure area
AR1 and the second exposure area AR2 are set to be overlapped with
each other at a same position.
[0262] Also in this embodiment, the operation, in which the
position of the first image plane IS1 and the position of the
second image plane IS2 are measured by using the spatial
image-measuring instrument 162, is executed before starting the
exposure operation for the substrate P. When the position of the
first image plane IS1 is measured by using the spatial
image-measuring instrument 162, the controller 30 arranges the
aperture 161 on the measuring stage 90 in the first exposure area
AR1, and the controller 30 detects the spatial image of the
measuring mark of the first mask M1 arranged in the first
illumination area IA1 with the spatial image-measuring instrument
162 to measure the position of the first image plane IS1, in the
same manner as in the embodiment described above. In this
embodiment, the first exposure area AR1 and the second exposure
area AR2 are overlapped with each other. When the position of the
first image plane IS1 is measured, the radiation of the second
exposure light beam EL2 is stopped. When the position of the second
image plane IS2 is measured by using the spatial image-measuring
instrument 162, the controller 30 arranges the aperture 161 on the
measuring stage 90 in the second exposure area AR2, and the
controller 30 detects the spatial image of the measuring mark of
the second mask M2 arranged in the second illumination area IA2
with the spatial image-measuring instrument 162 to measure the
position of the second image plane IS2, in the same manner as in
the embodiment described above. When the position of the second
image plane IS2 is measured, the radiation of the first exposure
light beam EL1 is stopped.
[0263] Also in this embodiment, the controller 30 starts the
exposure for the substrate P after allowing the position of the
first image plane IS1 and the position of the second image plane
IS2 to be matched to each other on the basis of the measurement
result of the spatial image-measuring instrument 162. In order to
allow the position of the first image plane IS1 and the position of
the second image plane IS2 to be matched to each other, for
example, it is allowable to adjust at least one of the positions of
the first pattern formation surface K1 and the second pattern
formation surface K2. In this case, for example, it is also
allowable to use the optical adjustment of the projection optical
system PL' and/or the adjustment of the wavelength of the exposure
light beam, instead of or in combination with the positional
adjustment of at least one of the first pattern formation surface
K1 and the second pattern formation surface K2.
[0264] The controller 30 performs the exposure for the substrate P
while maintaining the adjusted surface positions of the first
pattern formation surface K1 and the second pattern formation
surface K2 so that the first and second image planes IS1, IS2 are
not moved. By doing so, it is unnecessary to move the first and
second masks M1, M2 during the exposure for the substrate P; and
the first and second image planes IS1, IS2 and the surface of the
substrate P can be adjusted to be in the desired positional
relationship only by moving the substrate table 80T.
[0265] A part or parts of the optical elements of the projection
optical system PL' may be moved so that the first image plane IS1
and the second image plane IS2 are formed in the substantially same
plane.
[0266] In the respective embodiments described above, the position
information about the first image plane IS1 and the second image
plane IS2 is obtained by detecting the spatial image of the
measuring marks provided for the first and second masks M1, M2 by
using the spatial image-measuring instrument 162. However, the
reference marks provided for the mask stage 60 may be arranged in
the first and second illumination areas IA1, IA2, and the spatial
images thereof may be detected with the spatial image-measuring
instrument 162. The mask stage provided with the reference mark is
disclosed, for example, in Japanese Patent Application Laid-open
Nos. 8-78313 and 8-78314 (each corresponding to U.S. Pat. No.
6,018,384) and Japanese Patent Application Laid-open No. 8-227847
(corresponding to U.S. Pat. No. 6,169,602).
Eighth Embodiment
[0267] The eighth embodiment will be explained. The feature of the
exposure apparatus EX of this embodiment is that a surface
detecting system capable of obtaining the surface information about
a pattern formation surface of the mask is provided as disclosed,
for example, in Japanese Patent Application Laid-open No. 11-45846
(corresponding to U.S. Pat. No. 6,549,271). In the following
description, the constitutive parts or components, which are the
same as or equivalent to those of the embodiment described above,
are designated by the same reference numerals, any explanation of
which will be simplified or omitted.
[0268] FIG. 24 shows schematically shows main components of the
exposure apparatus EX according to the eighth embodiment. As shown
in FIG. 24, the exposure apparatus EX according to this embodiment
includes a surface detecting system 140 which is capable obtaining
the surface information about the first and second pattern
formation surfaces K1, K2 of the first and second masks M1, M2. The
surface detecting system 140 includes a light-emitting system 141
which radiates a detecting light beam Lb onto the first and second
pattern formation surfaces K1, K2, and a light-receiving system 142
which is capable of receiving the reflected light beam of the
detecting light beam Lb radiated from the light-emitting system 141
onto the first and second pattern formation surfaces K1, K2. The
surface detecting system 140 is capable of determining the surface
information about the first and second pattern formation surfaces
K1, K2 on the basis of the light-receiving result of the
light-receiving system 142. The surface information about the first
and second pattern formation surfaces K1, K2 includes the position
information about the first and second pattern formation surfaces
K1, K2 (position information in the Z axis, .theta.X, and .theta.Y
directions) and an information about the shapes of the first and
second pattern formation surfaces K1, K2 (irregularity or
unevenness information).
[0269] For example, when the spatial image-measuring instrument 162
measures the position of the first image plane IS1 on the basis of
the first exposure light beam EL1 from the measuring mark of the
first pattern formation surface K1, the controller 30 can determine
the position of the first image plane IS1 corresponding to each of
the positions of the first pattern formation surface K1 on the
basis of the measurement result of the spatial image-measuring
instrument 162 and the detection result of the surface detecting
system 140. That is, as indicated by broken lines shown in FIG. 24,
when any warpage appears on the first pattern formation surface K1,
the position of the first image plane IS1 formed by the first
exposure light beam EL1 allowed to pass through the central area of
the first pattern formation surface K1 is different from the
position of the first image plane IS1 formed by the first exposure
light beam EL1 allowed to pass through the circumferential edge
area (for example, the area in which the measuring mark is formed)
of the first pattern formation surface K1. Even when the spatial
image-measuring instrument 162 measures the position of the first
image plane IS1 on the basis of the first exposure light beam EL1
allowed to pass through the circumferential edge area of the first
pattern formation surface K1, the controller 30 can determine the
position of the first image plane IS1 formed by the first exposure
light beam EL1 allowed to pass through the central area of the
first pattern formation surface K1 on the basis of the measurement
result of the spatial image-measuring instrument 162 and the
detection result of the surface detecting system 140.
[0270] In the first to seventh embodiments described above, the
positional relationship between the image plane (IS1 and/or IS2)
and the surface of the substrate P can be adjusted highly
accurately in the exposure area (AR1 and/or AR2) by adjusting at
least one of the first image plane IS1, the second image plane IS2,
and the surface of the substrate P while considering the detection
result of the surface detecting system 140 as well.
[0271] When the surface information about the first and second
pattern formation surfaces K1, K2 can be measured during the
exposure for the substrate P by using the surface detecting system
140, the surface detecting system 140 may be used instead of the Z
measuring device 70A described above. The surface detecting system
140 is not limited to the structure shown in FIG. 24.
Ninth Embodiment
[0272] The ninth embodiment will be explained. The feature of this
embodiment is that a liquid immersion area of a liquid is formed on
the substrate P, and the first exposure light beam EL1 and the
second exposure light beam EL2 are radiated through the liquid of
the liquid immersion area onto the shot area S on the substrate P.
In the following description, the constitutive parts of components,
which are the same as or equivalent to those of the embodiment
described above, are designated by the same reference numerals, any
explanation of which will be simplified or omitted.
[0273] FIG. 25 shows a schematic arrangement view illustrating the
ninth embodiment. The exposure apparatus EX of this embodiment is
an exposure apparatus to which the liquid immersion method is
applied in order that the exposure wavelength is substantially
shortened to improve the resolution and the depth of focus is
substantially widened, as disclosed, for example, in International
Publication No. 99/49504, Japanese Patent Application Laid-open No.
2004-289126 (corresponding to United States Patent Application
Publication No. 2004/0165159), and the like. The exposure apparatus
EX includes a liquid immersion system 100 for forming the liquid
immersion area LR of the liquid LQ on the substrate P. In this
embodiment, water (pure or purified water) is used as the liquid
LQ. A top coat film or the like, which protects the photosensitive
material and the base material from the liquid LQ, can be provided
on the substrate P.
[0274] The liquid immersion system 100 includes a supply member 113
having a supply port 112 for supplying the liquid LQ to an optical
path and a recovery member 115 having a recovery port 114 for
recovering the liquid LQ which are provided in the vicinity of the
optical path, the optical path being for the first and second
exposure light beams EL1, EL2 between the substrate P and a final
optical element FL closest to the image plane of the projection
optical system PL among a plurality of optical elements of the
projection optical system PL. A liquid supply device (not shown),
which is capable of feeding out the liquid LQ, is connected to the
supply member 113. The liquid supply device is capable of supplying
the liquid LQ which is clean and temperature-adjusted to the
optical path via the supply port 112. A liquid recovery device (not
shown), which includes, for example, a vacuum system and the like,
is connected to the recovery member 115. The liquid recovery device
is capable of recovering, via the recovery port 114, the liquid LQ
which fills the optical path. The operations of the liquid supply
device and the liquid recovery device are controlled by the
controller 30. The controller 30 controls the liquid immersion
system 100 to concurrently perform the liquid supply operation by
the liquid supply device and the liquid recovery operation by the
liquid recovery device, to thereby form the liquid immersion area
LR of the liquid LQ locally on a part of the substrate P so that
the optical path for the first and second exposure light beams EL1,
EL2, which is disposed between the lower surface (light-exit
surface) of the final optical element FL of the projection optical
system PL and the surface of the substrate P on the substrate stage
80, is filled with the liquid LQ. The liquid immersion area LR is
formed to be larger than the first exposure area AR1 and the second
exposure area AR2 on the substrate P. That is, the liquid immersion
area LR is formed so that all of the first exposure area AR1 and
the second exposure area AR2 are covered therewith. It is not
necessarily indispensable that a part or parts of the liquid
immersion system 100 (for example, any member for constructing the
liquid supply device and/or the liquid recovery device) are
provided for the exposure light beam EL. For example, any equipment
of the factory or the like in which the exposure apparatus is
installed may be used in place thereof. The structure of the liquid
immersion system 100 is not limited to the structure described
above. It is possible to use those disclosed, for example, in
European Patent Publication No. 1420298, International Publication
No. 2004/055803, International Publication No. 2004/057590,
International Publication No. 2005/029559 (corresponding to United
States Patent Application Publication No. 2006/0231206),
International Publication No. 2004/086468 (corresponding to United
States Patent Application Publication No. 2005/0280791), and
Japanese Patent Application Laid-open No. 2004-289126
(corresponding to U.S. Pat. No. 6,952,253). The contents of, for
example, United States Patent documents and the like are
incorporated herein by reference within a range of permission of
the domestic laws and ordinances of the designated or selected
state, in relation to the liquid immersion mechanism of the liquid
immersion exposure apparatus and the attached equipment
thereof.
[0275] The exposure apparatus EX forms the liquid immersion area LR
of the liquid LQ on the substrate P held by the substrate stage 80.
The first and second exposure light beams EL1, EL2 are radiated
onto the first and second exposure areas AR1, AR2 on the substrate
P respectively through the liquid LQ of the liquid immersion area
LR to expose the substrate P with the first and second exposure
light beams EL1, EL2.
[0276] The exposure apparatus EX radiates the first and second
exposure light beams EL1, EL2 onto the first and second exposure
areas AR1, AR2 respectively while moving the shot area S on the
substrate P in the Y axis direction with respect to the first and
second exposure areas AR1, AR2 in the state in which the liquid
immersion area LR is formed. Accordingly, the shot area S on the
substrate P is subjected to the multiple exposure (double exposure)
with the image of the first pattern PA1 formed with the first
exposure light beam EL1 radiated onto the first exposure area AR1
through the liquid LQ and the image of the second pattern PA2
formed with the second exposure light beam EL2 radiated onto the
second exposure area AR2 through the liquid LQ.
[0277] FIG. 26 schematically illustrates an example of the
operations of the substrate stage 80 and the measuring stage 90. As
shown in FIG. 26, the substrate stage 80 and the measuring stage 90
are movable on the side of the image plane of the projection
optical system PL. The liquid immersion area LR, which is formed by
the liquid immersion system 100, can be moved by the controller 30
between the upper surface of the substrate stage 80 and the upper
surface of the measuring stage 90 by moving the substrate stage 80
and the measuring stage 90 in the X axis direction and/or the Y
axis direction together in a state in which the upper surface of
the substrate stage 80 and the upper surface of the measuring stage
90 are allowed to make approach to each other or make contact with
each other in a predetermined area including a position disposed
just under or below the projection optical system PL. For example,
when the positions of the first and second image planes IS1, IS2
are measured by using the spatial image-measuring instrument 162,
the liquid immersion area LR is moved to a position on the
measuring stage 90. The controller 30 performs the measuring
operation by the spatial image-measuring instrument 162 in a state
in which the liquid immersion area LR is formed to cover the
aperture 161. The spatial image-measuring instrument 162 can
measure the positions of the first and second image planes IS1, IS2
formed via the projection optical system PL and the liquid LQ by
measuring the spatial image via the projection optical system PL
and the liquid LQ. When the substrate P is subjected to the liquid
immersion exposure, the liquid immersion area LR is moved to a
position on the substrate stage 80.
[0278] In this embodiment, water (pure or purified water) is used
as the liquid LQ. However, it is also allowable to use liquids
other than water as the liquid LQ. For example, when the exposure
light beam EL is the F.sub.2 laser beam, the F.sub.2 laser beam is
not transmitted through water. Therefore, the liquid LQ may be, for
example, a fluorine-based fluid such as fluorine-based oil and
perfluoropolyether (PFPE). Alternatively, other than the above, it
is also possible to use, as the liquid LQ, liquids (for example,
cedar oil) which have the transmittance with respect to the
exposure light beam EL, which have the refractive index as high as
possible, and which are stable against the photoresist coated on
the surface of the substrate P and the projection optical system
PL.
[0279] The liquid LQ, which has the refractive index (for example,
not less than 1.5) higher than that of pure water, includes, for
example, predetermined liquids having the C--H bond or the O--H
bond such as isopropanol having a refractive index of about 1.50
and glycerol (glycerin) having a refractive index of about 1.61;
predetermined liquids (organic solvents) such as hexane, heptane,
decane and the like; decalin (decahydronaphthalene) having a
refractive index of about 1.60; and the like. As for the liquid LQ,
it is also allowable to use liquids obtained by mixing arbitrary
two or more liquids of the foregoing liquids and liquids obtained
by adding (mixing) at least one of the foregoing liquid or liquids
to (with) pure or purified water. Further, as for the liquid LQ, it
is also allowable to use liquids obtained by adding (mixing) base
or acid such as H.sup.+, Cs.sup.+, K.sup.+, Cl.sup.-,
SO.sub.4.sup.2-, PO.sub.4.sup.2- and the like to (with) pure or
purified water, and it is also allowable to use liquids obtained by
adding (mixing) fine particles of Al oxide or the like to (with)
pure or purified water. As for the liquid LQ, it is preferable to
use liquids which have the small coefficients of light absorption,
which have the small temperature dependency, and which are stable
against the photosensitive material (or, for example, top coat film
or antireflection film) coated on the surface of the substrate P
and/or the projection systems PL, PL'. As for the liquid LQ, it is
also allowable to use liquids having refractive indexes higher than
that of water with respect to the exposure light beam EL, for
example, liquids having refractive indexes of about 1.6 to 1.8. As
for the liquid LQ, it is also possible to use supercritical
fluids.
[0280] The final optical element FL of the projection optical
system PL may be formed of silica glass (silica), or single crystal
materials of fluorine compounds such as calcium fluoride, barium
fluoride, strontium fluoride, lithium fluoride, sodium fluoride,
and the like. Alternatively, the final optical element FL may be
formed of a material having a refractive index (for example, not
less than 1.6) higher than those of silica glass and calcium
fluoride. Materials usable as the material having the refractive
index of not less than 1.6 include, for example, sapphire and
germanium dioxide as disclosed, for example, in International
Publication No. 2005/059617, and potassium chloride (refractive
index: about 1.75) as disclosed in International Publication No.
2005/059618.
[0281] In the projection optical system PL, a refractive index
n.sub.1 of the final optical element FL with respect to the
exposure light beam EL may be smaller than a refractive index
n.sub.2 of the liquid LQ with respect to the exposure light beam
(EL1, EL2). For example, the final optical element FL is formed of
silica glass (refractive index: about 1.5), and the liquid LQ to be
used has the refractive index n.sub.2 which is higher (for example,
about 1.6 to 1.8) than that of silica glass. Alternatively, in the
projection optical system PL, the refractive index n.sub.1 of the
final optical element FL may be larger than the refractive index
n.sub.2 of the liquid LQ. For example, the final optical element FL
is formed of a material having a refractive index of not less than
1.6, and the liquid LQ to be used has the refractive index n.sub.2
which is higher than that of pure water and which is smaller than
that of the final optical element FL. In this case, it is
preferable that the refractive index n.sub.2 of the liquid LQ,
which is smaller than the refractive index n.sub.1 of the final
optical element FL, is larger than the numerical aperture NA of the
projection optical system.
[0282] In the projection optical system of this embodiment, an
optical path, which is disposed on the side of the object plane of
the final optical element, may be also filled with the liquid, in
addition to the optical path which is disposed on the side of the
image plane of the final optical element, as disclosed, for
example, in International Publication No. 2004/019128
(corresponding to United States Patent Application Publication No.
2005/0248856). It is also allowable that a thin film, which has the
liquid-attractive property and/or the anti-dissolution function,
may be formed on a part (including at least a contact surface with
the liquid LQ) or all of the surface of the final optical element.
Silica glass has a high affinity for the liquid LQ, for which any
anti-dissolution film is unnecessary as well. However, it is
preferable to form at least any anti-dissolution film for calcium
fluoride.
[0283] In this embodiment, the first exposure area AR1 and the
second exposure area AR2 are covered with one liquid immersion area
LR. However, the first exposure area AR1 and the second exposure
area AR2 may be covered with distinct (separate) liquid immersion
areas respectively. In this case, a liquid of the first liquid
immersion area which covers the first exposure area AR1 may be the
same as or different from a liquid of the second liquid immersion
area which covers the second exposure area AR2 in relation to terms
of the type (physical property) thereof. For example, the first and
second liquid immersion areas may be formed with liquids of
different types (at least having mutually different refractive
indexes with respect to the exposure light beam EL) respectively.
For example, one of the first and second liquid immersion areas may
be formed with water (pure or purified water), and the other of the
liquid immersion areas may be formed with any liquid having a
refractive index with respect to the exposure light beam higher
than that of water (refractive index: about 1.44). At least one of
the viscosity of the liquid LQ, the transmittance for the exposure
light beam, and the temperature may mutually differ between the
first liquid immersion area and the second liquid immersion
area.
[0284] In the first to ninth embodiments described above, at least
one of the positions of the first image plane IS1 and the second
image plane IS2 is adjusted by adjusting at least one of the
positions of the first pattern formation surface K1 on which the
first pattern PA1 is formed and the second pattern formation
surface K2 on which the second pattern PA2 is formed. However, it
is also allowable to adjust at least one of the positions of the
first image plane IS1 and the second image plane IS2 by using the
first imaging characteristic-adjusting device LC1 and the second
imaging characteristic-adjusting device LC2 described above. As
described above, the first imaging characteristic-adjusting device
LC1 is capable of performing the positional adjustment of the first
image plane IS1 in the Z axis direction and the positional
adjustment (inclination adjustment) of the first image plane IS1 in
the .theta.X and .theta.Y directions, and the second imaging
characteristic-adjusting device LC2 is capable of performing the
positional adjustment of the second image plane IS2 in the Z axis
direction and the positional adjustment of the second image plane
IS2 in the .theta.X and .theta.Y directions. The controller 30 is
capable of adjusting at least one of the positions of the first
image plane IS1 and the second image plane IS2 by adjusting the
projection optical system PL by using the first and second imaging
characteristic-adjusting devices LC1, LC2. Of course, the
positional adjustment of the pattern formation surface (K1 and/or
K2) and the imaging characteristic-adjusting device (LC1 and/or
LC2) may be used in combination.
[0285] In the first to ninth embodiments described above, there is
such a possibility that at least one of the positions of the first
image plane IS1 and the second image plane IS2 may be changed due
to the thermal change in an optical element of the projection
optical system (PL, PL') caused by the radiation of the first
exposure light beam EL1 and the second exposure light beam EL2.
When the change as described above is caused, the light amounts (or
the energy) of the first exposure light beam EL1 and the second
exposure light beam EL2 allowed to come into the projection optical
system (PL, PL') may be monitored respectively to adjust the
surface positional relationship among the first image plane IS1,
the second image plane IS2, and the surface of the substrate P.
That is, the change in at least one of the first image plane IS1
and the second image plane IS2, which is caused by the first
exposure light beam EL1 and the second exposure light beam EL2
coming into the projection optical system, may be compensated by
performing the positional adjustment for at least one of the first
image plane IS1, the second image plane IS2, and the surface of the
substrate P. For example, it is possible to perform the positional
adjustment for at least one of the first image plane IS1 and the
second image plane IS2 by controlling at least one of the first
imaging characteristic-adjusting device LC1 and the second imaging
characteristic-adjusting device LC2 on the basis of the light
amounts (or the energy) of the first exposure light beam EL1 and
the second exposure light beam EL2 allowed to come into the
projection optical system (PL, PL'). It is also possible to perform
the positional adjustment for the surface of the substrate P by
controlling the substrate stage 80 (substrate table 80T) on the
basis of the light amounts (or the energy) of the first exposure
light beam EL1 and the second exposure light beam EL2 allowed to
come into the projection optical system (PL, PL').
[0286] In the respective embodiments described above, the plurality
of measuring members, which include, for example, the spatial
image-measuring instrument 162 to be used for measuring the
positions of the first and second image planes IS1, IS2, are
provided for the measuring stage 90. However, at least one of the
plurality of measuring members, for example, the spatial
image-measuring instrument 162 may be provided for the substrate
stage 80 (substrate table 80T). In this case, the entire spatial
image-measuring instrument 162 may be provided for the substrate
stage 80. However, it is also allowable that only a part of the
spatial image-measuring instrument 162 is provided for the
substrate stage 80. In the respective embodiments described above,
the spatial image-measuring instrument 162 is used to measure the
positions of the first and second image planes IS1, IS2. However,
the image plane-measuring device is not limited to the measuring
device or instrument as described above, and may be any device or
instrument.
[0287] In the respective embodiments described above, the
explanation has been made that in some cases such that the first
and second image planes IS1, IS2 are allowed to be matched to the
surface (outermost surface) of the substrate P. However, the
surface (exposure surface), to which the first and second image
planes IS1, IS2 are to be matched in order to form the desired
pattern on the substrate P, is not necessarily limited to the
surface (outermost surface) of the substrate P. For example, as
schematically shown in FIG. 27A, when the substrate P has a base
material W which includes a semiconductor wafer and a resist film
Rg which is formed on the base material W, then the exposure
surface, to which the first and second image planes IS1, IS2 are to
be matched, is not necessarily limited to the outermost surface of
the substrate P (surface of the resist film Rg in this case). For
example, there is such a possibility that the exposure surface is
the interface between the base material W and the resist film Rg,
or any internal portion of the resist film Rg. On the other hand,
as schematically shown in FIG. 27B, when the substrate P has a base
material W which includes a semiconductor wafer, a resist film Rg
which is formed on the base material W, and a film Tc (for example,
a top coat film or an antireflection film) which is formed on the
resist film Rg, then the surface (exposure surface), to which the
first and second image planes IS1, IS2 are to be matched, is not
necessarily limited to the outermost surface of the substrate P
(surface of the film Tc in this case). The exposure surface, to
which the first and second image planes IS1, IS2 are to be matched
in order to form the desired pattern on the substrate P, can be
determined, for example, by a test exposure. The controller 30 can
adjust the positional relationship between the first and second
image planes IS1, IS2 and the substrate P so that the exposure
surface, which is determined, for example, by the test exposure, is
matched to the first and second image planes IS1, IS2.
[0288] In the respective embodiments described above, the first
mask M1 and the second mask M2 are synchronously moved with respect
to the substrate P by the main stage 61 provided on the mask stage
60. However, the movement is not limited to this. The first mask M1
and the second mask M2 can be synchronously moved with respect to
the substrate P independently as well. In this case, it is possible
to provide a first mask stage and a second mask stage which are
driven independently while placing the first mask M1 and the second
mask M2 respectively thereon. For example, the main stage 61 may be
omitted; and the first substage 62 and the second substage 63 may
be synchronously moved with respect to the substrate P
independently or in cooperation. When the first mask stage and the
second mask stage, which are driven independently, are provided as
described above, it is necessary that each of the first and second
mask stages is synchronously moved with respect to the substrate
stage. That is, it is necessary to adjust each of the positional
relationship between the first mask M1 placed on the first mask
stage and the shot area of the substrate P and the positional
relationship between the second mask M2 placed on the second mask
stage and the shot area of the substrate P. By doing so, the shot
area of the substrate P can be subjected to the multiple exposure
(double exposure) with the image of the first pattern PA1 of the
first mask M1 formed in the first exposure area AR1 and the image
of the second pattern PA2 of the second mask M2 formed in the
second exposure area AR2 in such a state that the images are
correctly overlaid with each other.
[0289] In the respective embodiments described above, when the shot
area S on the substrate P is subjected to the exposure, the first
mask M1 and the second mask M2 are moved in the same scanning
direction. However, the first mask M1 and the second mask M2 may be
moved in the mutually opposite scanning directions. For example,
when the first mask M1 is moved in the +Y direction, the second
mask M2 may be moved in the -Y direction; and when the first mask
M1 is moved in the -Y direction, the second mask M2 may be moved in
the +Y direction. Alternatively, the first mask M1 may be moved in
the XY plane, and the second mask M2 may be moved in the YZ plane
(or in the XZ plane).
[0290] In the respective embodiments described above, the first
pattern PA1 is formed on the first mask M1, and the second pattern
PA2 is formed on the second mask M2 which is distinct (separate)
from the first mask M1. However, the first pattern PA1 and the
second pattern PA2 may be formed on a single mask. The substrate P
can be subjected to the multiple exposure with the image of the
first pattern PA1 and the image of the second pattern PA2 provided
on the single mask.
[0291] In the respective embodiments described above, the
projection optical system PL (PL') is not limited to those of the
reduction system. It is also allowable to use any one of those of,
for example, the 1.times. magnification system and the magnifying
system. In the respective embodiments described above, the
explanation has been made as exemplified by the case in which the
projection optical system PL (PL') is the catadioptric system
including catoptric optical elements and dioptric optical elements
by way of example. However, the projection optical system PL (PL')
may be, for example, the dioptric system including no catoptric
optical element or the catoptric system including no dioptric
optical element. Further, the projection optical system PL (PL') is
not limited to the two-headed type catadioptric system. It is also
allowable to use the so-called inline type catadioptric system in
which a plurality of reflecting surfaces are provided; an optical
system (catoptric or dioptric system) for forming an intermediate
image at least once is provided at a part thereof; and a single
optical axis is provided, as disclosed, for example, in
International Publication No. 2004/107011 (corresponding to United
States Patent Application Publication No. 2006/0121364). The
projected image, which is generated by the projection optical
system PL (PL'), may be either an inverted image or an erecting
image.
[0292] In the respective embodiments described above, the image of
the first pattern PA1 of the first mask M1 and the image of the
second pattern PA2 of the second mask M2 are projected onto the
substrate P by using the single projection optical system PL.
However, a plurality of (two) projection optical systems may be
provided to project the image of the first pattern PA1 of the first
mask M1 and the image of the second pattern PA2 of the second mask
M2 onto the substrate P by using the distinct projection optical
systems. The present invention is also applicable to a scanning
type exposure apparatus based on the so-called multi-lens system in
which a plurality of projection optical systems are arranged so
that adjoining projection areas are displaced by a predetermined
amount in the scanning direction, and that the ends of the
adjoining projection areas are overlapped with each other in a
direction perpendicular to the scanning direction.
[0293] In the respective embodiments described above, the first
exposure area AR1 and the second exposure area AR2 can be
simultaneously arranged in one shot area S. However, it is not
necessarily indispensable that the first exposure area AR1 and the
second exposure area AR2 can be arranged simultaneously in one shot
area S. It is possible to arbitrarily set the first exposure area
AR1 and the second exposure area AR2.
[0294] In the respective embodiments described above, the first
exposure area AR1 and the second exposure area AR2 may be different
from each other in at least one of the size and the shape. For
example, the width in the X axis direction and/or the width in the
Y axis direction may differ between the first exposure area AR1 and
the second exposure area AR2. When the width in the X axis
direction differs between the first exposure area AR1 and the
second exposure area AR2, only a part in the shot area S is
subjected to the multiple (double) exposure by one time of the
scanning operation. The shape of each of the first and second
exposure areas AR1, AR2 is not limited to the rectangular shape,
and may be any other shape including, for example, circular
arc-shaped, trapezoidal, parallelogram forms, or the like.
[0295] In the respective embodiments described above, the exposure
light beams EL1, EL2 are continuously radiated onto the first
exposure area AR1 and the second exposure area AR2 respectively
during the period in which the shot area S passes across the first
exposure area AR1 and the second exposure area AR2. However, the
exposure light beam may be radiated only in a part of a period of
time during which the shot area S passes across at least one of the
exposure areas. That is, only a part of the shot area S may be
subjected to the multiple (double) exposure.
[0296] In the respective embodiments described above, the
respective shot areas S of the substrate P are subjected to the
double exposure with the image of the first pattern PA1 of the
first mask M1 and the image of the second pattern PA2 of the second
mask M2. However, it is also possible to perform the triple or more
multiple exposure in accordance with the principle of the present
invention. When the triple exposure is performed, a third mask (M3)
having a third pattern (PA3) is used in addition to the first mask
M1 and the second mask M2. The third mask (M3) is moved in
synchronization with the movement of the substrate P in the same
manner as the first mask M1 and the second mask M2. The respective
shot areas S of the substrate P can be subjected to the triple
exposure with the images of the first to third patterns. In this
case, a third exposure area AR3, on which the image is formed by
radiating the illumination light beam onto the third pattern, can
be set so that the third exposure area AR3 is distinct from the
first exposure area AR1 and the second exposure area AR2 or a part
of the third exposure area AR3 is overlapped with at least one of
the first exposure area AR1 and the second exposure area AR2. In
this case, three projection optical systems may be independently
provided corresponding to the exposure areas respectively.
Alternatively, the projection optical system PL as shown in FIG. 4
may be further provided with an optical system corresponding to the
third mask similarly to the first and second optical systems 41, 42
corresponding to the first mask M1 and the second mask M2, and the
projection optical system PL may be provided with a catoptric
and/or dioptric system for guiding the light beam from the optical
system to the third optical system. An optical system, which
includes a reflecting plate and a beam splitter for guiding the
exposure light beam allowed to pass through the third mask to the
optical system 120C, may be further provided by improving the
optical system shown in FIG. 22. The third mask (M3) may be placed
on the mask stage 60 on which the first mask M1 and the second mask
M2 are placed, or the third mask (M3) may be placed on any distinct
(separate) mask stage.
[0297] In the respective embodiments described above, the
interferometer system is used to measure the position information
about the mask stage and the substrate stage. However, the
measurement is not limited to this. For example, it is also
allowable to use an encoder system for detecting a scale
(diffraction grating) provided on the upper surface of the
substrate stage. In this case, it is preferable that a hybrid
system including both of the interferometer system and the encoder
system is provided, and that the measurement result of the encoder
system is calibrated (subjected to the calibration) by using the
measurement result of the interferometer system. The position
control of the substrate stage may be performed by switching and
using the interferometer system and the encoder system or using
both of them.
[0298] In the respective embodiments described above, an ArF
excimer laser may be used as a light source device for generating
an ArF excimer laser beam as the exposure light beam. However, it
is also allowable to use a high harmonic wave-generating device
which includes, for example, a solid laser light source such as a
DFB semiconductor laser or a fiber laser, a light-amplifying
section having a fiber amplifier or the like, and a
wavelength-converting section and which outputs a pulse light beam
having a wavelength of 193 nm as disclosed, for example, in
International Publication No. 1999/46835 (corresponding to U.S.
Pat. No. 7,023,610).
[0299] The substrate P, which is usable in the respective
embodiments described above, is not limited only to the
semiconductor wafer for producing the semiconductor device.
Applicable substrates include, for example, a glass substrate for
the display device, a ceramic wafer for the thin film magnetic
head, a master plate (synthetic silica glass, silicon wafer) for
the mask or the reticle to be used for the exposure apparatus, or a
film member. The shape of the substrate P is not limited only to
the circular shape, and it is also allowable to use other shapes
such as a rectangular shape.
[0300] The present invention is also applicable to an exposure
apparatus in which the measuring stage is not provided and only one
substrate stage is provided.
[0301] The present invention is also applicable to an exposure
apparatus of the multistage type (twine-stage type) provided with a
plurality of substrate stages as disclosed, for example, in
Japanese Patent Application Laid-open Nos. 10-163099 and 10-214783
(corresponding to U.S. Pat. Nos. 6,341,007, 6,400,441, 6,549,269,
and 6,590,634) and Published Japanese Translation of PCT
International Publication for Patent Application No. 2000-505958
(corresponding to U.S. Pat. No. 5,969,441). In this case, the
information about the substrate P is obtained in the measuring
station, and the positional adjustment between the image plane and
the surface of the substrate is performed in at least one of the
first exposure area AR1 and the second exposure area AR2 as
described above in the exposure station. The contents of U.S. Pat.
Nos. 6,341,007, 6,400,441, 6,549,269, 6,590,634, and 5,969,441
described above are incorporated herein by reference within a range
of permission of the domestic laws and ordinances of the designated
or selected state, in relation to the exposure apparatus of the
multistage type.
[0302] The embodiment, which is included in the respective
embodiments described above and in which the optical path for the
exposure light beam EL is filled with the liquid, adopts the
exposure apparatus in which the space between the projection
optical system and the substrate P is locally filled with the
liquid. However, the present invention is also applicable to a
liquid immersion exposure apparatus which performs the exposure in
a state in which the entire surface of the substrate as the
exposure-objective is immersed in the liquid as disclosed, for
example, in Japanese Patent Application Laid-open Nos. 6-124873 and
10-303114 and U.S. Pat. No. 5,825,043.
[0303] In the respective embodiments described above, the first and
second masks M1, M2 are used in order to form the first and second
patterns. However, instead of the first and second masks M1, M2, it
is possible to use an electronic mask (also referred to as
"variably shaped mask", "active mask", or "pattern generator")
which generates a variable pattern. As the electronic mask as
described above, it is possible to use DMD (Deformable Micro-mirror
Device or Digital Micro-mirror Device) which is a type of the no
light-emitting image display device (also referred to as "spatial
light modulator" (SLM)). DMD has a plurality of reflecting elements
(micromirrors) which are driven on the basis of predetermined
electronic data. The plurality of reflecting elements are arranged
in a two-dimensional matrix form on a surface of DMD, and each of
the elements is driven independently (is driven by element by
element) to reflect and deflect the exposure light beam. The
respective reflecting elements have reflecting surfaces for which
the angles are adjusted. The operation of DMD may be controlled by
the controller 30. The controller 30 drives the respective
reflecting elements of DMD on the basis of the electronic data
(pattern information) corresponding to the first pattern and the
second pattern to be formed on the substrate P. The exposure light
beam, which is radiated from the illumination system IL, is
patterned by the reflecting elements. When DMD is used, it is
possible to perform the multiple exposure more efficiently, because
it is unnecessary to perform the operation for exchanging the mask
and the positional adjustment operation for the mask on the mask
stage when the pattern is changed, as compared with the case in
which the exposure is performed with the mask (reticle) on which
the pattern is formed. It is also allowable for the exposure
apparatus using the electronic mask that the substrate is merely
moved in the X axis direction and the Y axis direction by the
substrate stage without providing the mask stage. In order to
adjust the relative positions of the images of the first and second
patterns on the substrate, for example, an actuator is used to
adjust the relative positions of the two electronic masks for
generating the first and second patterns respectively. However, in
any one of the two electronic masks, a timing for generating the
pattern may be adjusted, or the pattern formation position on the
electronic mask may be deviated. The exposure apparatus using DMD
is disclosed, for example, in Japanese Patent Application Laid-open
Nos. 8-313842 and 2004-304135 and U.S. Pat. No. 6,778,257. The
disclosure of U.S. Pat. No. 6,778,257 is incorporated herein by
reference within a range of permission of the domestic laws and
ordinances of the designated or selected state.
[0304] The type of the exposure apparatus EX is not limited to the
exposure apparatus for producing the semiconductor element for
exposing the semiconductor element pattern on the substrate P. The
present invention is also widely applicable, for example, to an
exposure apparatus for producing the liquid crystal display device
or producing the display as well as to an exposure apparatus for
producing, for example, the thin film magnetic head, the
micromachine, MEMS, the DNA chip, the image pickup element (CCD),
the reticle, the mask, or the like.
[0305] The contents of various United States Patents and various
United States patent application Publications referred to in this
specification, which are not included in those having been
specifically incorporated herein explicitly, are also incorporated
herein by reference within a range of permission of the domestic
laws and ordinances of the designated or selected state.
[0306] As described above, the exposure apparatus EX according to
the embodiments of the present invention is produced by assembling
the various subsystems including the respective constitutive
elements as defined in claims so that the predetermined mechanical
accuracy, the electric accuracy, and the optical accuracy are
maintained. In order to secure the various accuracies, those
performed before and after the assembling include the adjustment
for achieving the optical accuracy for the various optical systems,
the adjustment for achieving the mechanical accuracy for the
various mechanical systems, and the adjustment for achieving the
electric accuracy for the various electric systems. The steps of
assembling the various subsystems into the exposure apparatus
include, for example, the mechanical connection, the wiring
connection of the electric circuits, and the piping connection of
the air pressure circuits in correlation with the various
subsystems. It goes without saying that the steps of assembling the
respective individual subsystems are performed before performing
the steps of assembling the various subsystems into the exposure
apparatus. When the steps of assembling the various subsystems into
the exposure apparatus are completed, the overall adjustment is
performed to secure the various accuracies as the entire exposure
apparatus. It is desirable that the exposure apparatus is produced
in a clean room in which, for example, the temperature, the
cleanness and the like are managed.
[0307] As shown in FIG. 28, a microdevice such as the semiconductor
device is produced by performing, for example, a step 201 of
designing the function and the performance of the microdevice, a
step 202 of producing a mask (reticle) based on the designing step,
a step 203 of manufacturing a substrate as a base material for the
device, a substrate-processing step 204 including an exposure step
of performing the multiple exposure for the substrate with
pattern(s) of the mask by using the exposure apparatus EX of the
embodiment described above and a development step of developing the
exposed substrate, a step 205 of assembling the device (including
processing processes such as a dicing step, a bonding step, and a
packaging step), and an inspection step 206.
[0308] According to the present invention, the multiple exposure
for the substrate can be performed correctly and highly
efficiently. Therefore, it is possible to produce, at the high
throughput, the device having a highly integrated and complicated
circuit pattern. Therefore, the present invention will contribute
to the development of the high technology industry and the IT
industry including the semiconductor industry in our country.
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