U.S. patent application number 11/824527 was filed with the patent office on 2007-11-01 for semiconductor device, electronic device, electronic apparatus, and method of manufacturing semiconductor device.
Invention is credited to Akiyoshi Aoyagi, Masakuni Shiozawa.
Application Number | 20070252285 11/824527 |
Document ID | / |
Family ID | 33455417 |
Filed Date | 2007-11-01 |
United States Patent
Application |
20070252285 |
Kind Code |
A1 |
Shiozawa; Masakuni ; et
al. |
November 1, 2007 |
Semiconductor device, electronic device, electronic apparatus, and
method of manufacturing semiconductor device
Abstract
A method is provided to suppress detachment between
semiconductor packages while preventing dislocation at the time of
mounting a stacked semiconductor package on a motherboard.
Semiconductor packages PK1 and PK2 are bonded to each other through
protruding electrodes and resin is provided between the
semiconductor packages PK1 and PK2. The resin is provided in the
peripheries of the protruding electrodes so as to contact each of
the protruding electrodes while not contacting a semiconductor
chip.
Inventors: |
Shiozawa; Masakuni; (Sakata,
JP) ; Aoyagi; Akiyoshi; (Atsugi, JP) |
Correspondence
Address: |
HARNESS, DICKEY & PIERCE, P.L.C.
P.O. BOX 828
BLOOMFIELD HILLS
MI
48303
US
|
Family ID: |
33455417 |
Appl. No.: |
11/824527 |
Filed: |
June 29, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11346533 |
Feb 2, 2006 |
7256072 |
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11824527 |
Jun 29, 2007 |
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11093128 |
Mar 29, 2005 |
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11346533 |
Feb 2, 2006 |
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10807541 |
Mar 23, 2004 |
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11093128 |
Mar 29, 2005 |
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Current U.S.
Class: |
257/777 ;
257/E23.021; 257/E23.141; 257/E25.023 |
Current CPC
Class: |
H01L 24/73 20130101;
H01L 2224/45099 20130101; H01L 2924/01079 20130101; H05K 2203/0545
20130101; H01L 2224/85399 20130101; H01L 2225/06593 20130101; H01L
2924/15331 20130101; H01L 24/83 20130101; H01L 2924/01033 20130101;
H01L 24/16 20130101; H01L 24/48 20130101; H01L 2224/13155 20130101;
H01L 2924/01029 20130101; H05K 3/305 20130101; H05K 2201/10977
20130101; H01L 24/10 20130101; H01L 25/0657 20130101; H01L 2224/13
20130101; H01L 2224/48465 20130101; Y02P 70/50 20151101; H01L
2924/181 20130101; H01L 2224/13099 20130101; H01L 2224/13147
20130101; H01L 2225/1023 20130101; H01L 2224/05599 20130101; H01L
2224/32145 20130101; H01L 2224/73253 20130101; H01L 25/50 20130101;
H01L 2224/73204 20130101; H01L 2924/01005 20130101; H05K 2201/10734
20130101; H05K 3/3489 20130101; H01L 2224/2929 20130101; Y02P
70/613 20151101; H01L 23/3114 20130101; H01L 25/105 20130101; H01L
2225/1058 20130101; H01L 2924/00011 20130101; H01L 24/13 20130101;
H01L 2924/01074 20130101; H05K 2201/10674 20130101; H01L 2224/16225
20130101; H01L 2224/32225 20130101; H01L 2924/01075 20130101; H01L
2924/15311 20130101; H01L 2924/00014 20130101; H01L 24/31 20130101;
H01L 2224/13144 20130101; H01L 23/3128 20130101; H01L 2924/01006
20130101; H01L 2924/014 20130101; H05K 1/141 20130101; H01L
2224/48227 20130101; H01L 2224/83851 20130101; H01L 2224/293
20130101; H05K 2201/10515 20130101; H01L 2224/73265 20130101; H05K
3/3436 20130101; H01L 2224/73204 20130101; H01L 2224/16225
20130101; H01L 2224/32225 20130101; H01L 2224/48465 20130101; H01L
2224/48227 20130101; H01L 2224/48465 20130101; H01L 2224/48227
20130101; H01L 2924/00 20130101; H01L 2224/16225 20130101; H01L
2224/13144 20130101; H01L 2924/00 20130101; H01L 2224/16225
20130101; H01L 2224/13147 20130101; H01L 2924/00 20130101; H01L
2224/16225 20130101; H01L 2224/13155 20130101; H01L 2924/00
20130101; H01L 2924/15311 20130101; H01L 2224/73204 20130101; H01L
2224/16225 20130101; H01L 2224/32225 20130101; H01L 2924/00
20130101; H01L 2224/73204 20130101; H01L 2224/16225 20130101; H01L
2224/32225 20130101; H01L 2924/00012 20130101; H01L 2224/73265
20130101; H01L 2224/32225 20130101; H01L 2224/48227 20130101; H01L
2924/00012 20130101; H01L 2224/73265 20130101; H01L 2224/32145
20130101; H01L 2224/48227 20130101; H01L 2924/00012 20130101; H01L
2924/15311 20130101; H01L 2224/73265 20130101; H01L 2224/32225
20130101; H01L 2224/48227 20130101; H01L 2924/00 20130101; H01L
2924/00011 20130101; H01L 2224/29075 20130101; H01L 2224/83851
20130101; H01L 2924/00014 20130101; H01L 2224/2929 20130101; H01L
2924/00014 20130101; H01L 2224/293 20130101; H01L 2924/00014
20130101; H01L 2224/85399 20130101; H01L 2924/00014 20130101; H01L
2224/05599 20130101; H01L 2924/00014 20130101; H01L 2224/13
20130101; H01L 2924/00 20130101; H01L 2924/00014 20130101; H01L
2224/45015 20130101; H01L 2924/207 20130101; H01L 2924/00014
20130101; H01L 2224/45099 20130101; H01L 2924/181 20130101; H01L
2924/00012 20130101 |
Class at
Publication: |
257/777 ;
257/E23.141 |
International
Class: |
H01L 23/52 20060101
H01L023/52 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 25, 2003 |
JP |
2003-083070 |
May 22, 2003 |
JP |
2003-145199 |
Claims
1. A semiconductor device, comprising: a first carrier substrate
having a first land and a second land; a first semiconductor chip
mounted on the first carrier substrate; a second carrier substrate
having a third land and a fourth land and disposed above the first
semiconductor chip; a first protruding electrode disposed between
the first land and the third land; and a second protruding
electrode disposed between the second land and the fourth land, the
second land being disposed between the first land and the first
semiconductor chip.
2. The semiconductor device according to claim 1, wherein the
fourth land is disposed between the third land and the first
semiconductor chip.
3. The semiconductor device according to claim 1, wherein the first
land is separated from the second land.
4. The semiconductor device according to claim 1, wherein the third
land is separated from the fourth land.
5. The semiconductor device according to claim 1, further
comprising: a first resin disposed between the first carrier
substrate and the second carrier substrate and in contact with the
first protruding electrode.
6. The semiconductor device according to claim 1, further
comprising: a second resin disposed between the first carrier
substrate and the second carrier substrate and in contact with the
second protruding electrode.
7. The semiconductor device according to claim 1, further
comprising: a first resin disposed between the first carrier
substrate and the second carrier substrate and in contact with the
first protruding electrode; and a second resin disposed between the
first carrier substrate and the second carrier substrate and in
contact with the second protruding electrode, the second resin
being separated from the first resin.
8. The semiconductor device according to claim 1, further
comprising: a resin disposed between the first carrier substrate
and the second carrier substrate.
9. The semiconductor device according to claim 8, wherein the resin
is spaced apart from the first protruding electrode and the second
protruding electrode.
10. The semiconductor device according to claim 9, wherein the
resin is disposed along at least one side of the first carrier
substrate.
11. The semiconductor device according to claim 9, wherein the
resin is disposed around a perimeter of the first carrier
substrate.
12. The semiconductor device according to claim 9, wherein the
resin is disposed between the second land and the first
semiconductor chip.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional patent application of U.S.
Ser. No. 11/346,533 filed Feb. 2, 2006, which is a divisional
patent application of U.S. Ser. No. 11/093,128 filed Mar. 29, 2005
(now abandoned), which is a divisional patent application of U.S.
Ser. No. 10/807,541 filed Mar. 23, 2004 (now abandoned), claiming
priority to Japanese Patent Application Nos. 2003-083070 filed Mar.
25, 2003 and 2003-145199 filed May 22, 2003 which are hereby
expressly incorporated by reference herein in their entireties.
BACKGROUND
[0002] 1. Field of the Invention
[0003] The present invention relates to a semiconductor device, an
electronic device, an electronic apparatus, and a method of
manufacturing a semiconductor device, and particularly to those
suitable for being applied to a stacked structure of a
semiconductor package.
[0004] 2. Description of the Related Art
[0005] As for the conventional semiconductor package, there has
been attempting to save space by stacking semiconductor packages
through solder balls, for example, as disclosed in Japanese
laid-open patent publication No. 6-13541. In order to prevent
displacement caused by solder balls between the semiconductor
packages being re-melted at the time of mounting a stacked
semiconductor package on a motherboard, resin is filled between
stacked semiconductor packages.
[0006] However, as for a conventional semiconductor package, resin
is filled in the whole gap between semiconductor packages that are
stacked through solder balls. For this reason, when curing the
resin that is filled between semiconductor packages, moisture
contained in the resin does not fully drain out, and thus the
moisture remains in the resin that is filled between the
semiconductor packages. Therefore, when executing re-reflow at the
time of mounting a stacked semiconductor package on a motherboard,
there has been a problem in that moisture contained in the resin,
which is filled between the semiconductor packages, evaporates to
expand, thereby causing detachment between the semiconductor
packages.
[0007] The present invention is intended to provide a semiconductor
device, an electronic device, an electronic apparatus, and a method
of manufacturing a semiconductor device, which can prevent
detachment between semiconductor packages while preventing
displacement at the time of mounting a stacked semiconductor
package on the motherboard.
SUMMARY
[0008] In order to solve the above-described problem, a
semiconductor device according to the present invention includes a
first semiconductor package where a first semiconductor chip is
mounted, a second semiconductor package where a second
semiconductor chip is mounted, and a protruding electrode bonding
the first semiconductor package and the second semiconductor
package so that the second semiconductor package is held above the
first semiconductor chip. The semiconductor device also includes
resin that is provided so as to avoid at least, a part of the
surface of the first semiconductor chip and provided between the
first semiconductor package and the second semiconductor
package.
[0009] Accordingly, the resin can be filled between the first
semiconductor package and the second semiconductor package so as to
leave a gap between the first semiconductor package and the second
semiconductor package, which are bonded through the protruding
electrodes. Therefore, the moisture contained in the resin between
the first semiconductor package and the second semiconductor
package can be easily drained out, thereby expansion of the resin
between the first semiconductor package and the second
semiconductor package can be suppressed when executing re-reflow at
the time of mounting a first semiconductor package on a
motherboard. As a result, detachment between the first
semiconductor package and the second semiconductor package can be
prevented, while enabling the first semiconductor package to be
fixed to the second semiconductor package by resin. Moreover, even
when executing re-reflow of the protruding electrodes at the time
of mounting the first semiconductor package on the mother board,
displacement between the first semiconductor package and the second
semiconductor package can be prevented.
[0010] Moreover, as for a semiconductor device according to an
embodiment of the present invention, the protruding electrode is a
solder ball. Accordingly, the first semiconductor package can be
electrically coupled to the second semiconductor package by
executing a reflow process, thereby enabling the second
semiconductor package to be efficiently mounted on the first
semiconductor package.
[0011] Moreover, as for a semiconductor device according to an
embodiment of the present invention, the resin is arranged between
the first semiconductor package and the second semiconductor
package so as not to contact the protruding electrodes.
Accordingly, the resin can be filled between the first
semiconductor package and the second semiconductor package, leaving
a gap between the first semiconductor package and the second
semiconductor package that are bonded through the protruding
electrodes. Moreover, thermal damage can be suppressed even when
executing a reflow process of the protruding electrode. Therefore,
the resin having lower thermal resistance can be selected and low
hygroscopic resin can be selected, thereby suppressing detachment
between semiconductor packages while preventing displacement of the
stacked semiconductor package at the time of mounting the stacked
semiconductor package on a mother board.
[0012] Moreover, as for a semiconductor device according to an
embodiment of the present invention, the resin is arranged only at
the corners of the second semiconductor package. Accordingly, even
when the gap between the first semiconductor package and the second
semiconductor package is narrow, resin can be filled between the
first semiconductor package and the second semiconductor package.
Therefore, displacement of a stacked semiconductor package at the
time of mounting the first semiconductor package on a mother board
can be prevented, and detachment between semiconductor packages can
be suppressed, while suppressing complication of the manufacturing
process.
[0013] As for a semiconductor device according to an embodiment of
the present invention, on the first semiconductor package and the
second semiconductor package, a region without a protruding
electrode corresponding to the positions for arranging the resin is
provided. Accordingly, even when a protruding electrode is densely
arranged, resin can be filled between the first semiconductor
package and the second semiconductor package without contacting the
protruding electrode. Therefore, multi-pin packaging can be
supported, while enabling the prevention of displacement of the
stacked semiconductor package at the time of mounting the stacked
semiconductor package on a mother board, and detachment between
semiconductor packages can be suppressed.
[0014] As for a semiconductor device according to an embodiment of
the present invention, the resin is arranged to contact the
peripheries of the protruding electrodes. Accordingly, even when
resin is provided between the first semiconductor package and the
second semiconductor package so as to leave a gap between the first
semiconductor package and the second semiconductor package, it is
not necessary to provide a gap between the resin and the protruding
electrode. For this reason, it is not necessary to secure a
separate region for arranging resin against the protruding
electrode, and thus the resin can be filled between the first
semiconductor package and the second semiconductor package without
affecting the arrangement of the protruding electrode.
Consequently, displacement at the time of mounting a stacked
semiconductor package on a motherboard can be prevented and
detachment between semiconductor packages can be suppressed, while
suppressing the reduction of the number of the arranged protruding
electrodes.
[0015] Moreover, as for a semiconductor device according to an
embodiment of the present invention, the resin includes flux. This
enables the resin to crawl (e.g., move, migrate, etc.) up the
periphery of the solder at the time of solder reflow, while
enabling the stable execution of solder bonding. For this reason,
resin can be arranged to contact the peripheries of the protruding
electrode, and thus detachment between the semiconductor packages
can be suppressed while enabling the prevention of displacement at
the time of mounting the stacked semiconductor package on a
motherboard without complicating the manufacturing process.
[0016] Moreover, as for a semiconductor device according to an
embodiment of the present invention, the first semiconductor
package includes a first carrier substrate and the first
semiconductor chip that is flip-chip mounted on the first carrier
substrate, and the second semiconductor package includes a second
carrier substrate mounted on the first carrier substrate through
the protruding electrode so as to be held above the first
semiconductor chip, a second semiconductor chip that is mounted on
the second carrier substrate and sealing agent that seals the
second semiconductor chip.
[0017] Accordingly, even when the first semiconductor package and
the second semiconductor package are different types, detachment
between the first semiconductor package and the second
semiconductor package can be suppressed while preventing
displacement at the time of secondary packaging of the stacked
semiconductor package. Furthermore, connection reliability between
the first semiconductor package and the second semiconductor
package can be improved while enabling space savings.
[0018] As for a semiconductor device according to an embodiment of
the present invention, the first semiconductor package is a ball
grid array where the first semiconductor chip is flip-chip mounted
on the first carrier substrate, and the second semiconductor
package is a ball grid array or a chip-size package where the
second semiconductor chip mounted on the second carrier substrate
is mold-sealed.
[0019] Accordingly, even when using a general-purpose package,
detachment between the first semiconductor package and the second
semiconductor package can be suppressed while preventing
displacement at the time of secondary packaging of the stacked
semiconductor package, thereby the connection reliability between
different types of packages can be improved without deteriorating
production efficiency.
[0020] Moreover, an electronic device according to an embodiment of
the present invention includes a first package where a first
electronic component is mounted, a second package where a second
electronic component is mounted, and a protruding electrode bonding
the first package to the second package so that the second package
is held above the first electronic component. The electronic device
also includes resin that is provided so as to avoid at least a part
of the surface of a first electronic component and is provided
between the first package and the second package.
[0021] For this reason, the resin can be filled between the first
semiconductor package and the second semiconductor package, leaving
a gap between the first semiconductor package and the second
semiconductor package that are bonded through the protruding
electrode. For this reason, detachment between the first package
and the second package can be suppressed, while enabling the first
package and the second package to be closely fixed with the resin,
and thus displacement between the first package and the second
package can be suppressed even when executing re-reflow of the
protruding electrodes at the time of mounting the first
semiconductor package on a mother board.
[0022] Moreover, an electronic apparatus according to an embodiment
of the present invention includes a first semiconductor package
where a first semiconductor chip is mounted, a second semiconductor
package where a second semiconductor chip is mounted, and a
protruding electrode bonding the first semiconductor package and
the second semiconductor package so that the second semiconductor
package is held above the first semiconductor chip. The electronic
apparatus also includes resin that is provided so as to avoid at
least a part of the surface of the first semiconductor chip and is
provided between the first semiconductor package and the second
semiconductor package, a motherboard that mounts the first
semiconductor package bonded to the second semiconductor package,
and an electronic component bonded to the first semiconductor chip
and the second semiconductor chip through the motherboard.
[0023] Accordingly, displacement of the semiconductor package at
the time of mounting the first semiconductor package on the board
can be prevented while suppressing the degradation of the
reliability of the stacked semiconductor package, thereby the
reliability of the electronic apparatus can be improved while
enabling miniaturization and weight savings in the electronic
apparatus.
[0024] Moreover, a method of manufacturing a semiconductor device
according to an embodiment of the present invention includes:
bonding a first semiconductor package where a first semiconductor
chip is mounted and a second semiconductor package where a second
semiconductor chip is mounted through protruding electrodes; and
providing resin between the first semiconductor package and the
second semiconductor package so as to avoid at least a part of the
surface of the first semiconductor chip.
[0025] Accordingly a gap can be left between the first
semiconductor package and the second semiconductor package that are
bonded through the protruding electrodes even when resin is filled
between the first semiconductor package and the second
semiconductor package, thereby detachment between the first
semiconductor package and the second semiconductor package can be
suppressed while preventing displacement of the stacked
semiconductor package at the time of mounting the stacked
semiconductor package on a motherboard.
[0026] Moreover, as for a method of manufacturing a semiconductor
device according to an embodiment of the present invention, the
resin is arranged between the first semiconductor package and the
second semiconductor package so as not to contact the protruding
electrode. Accordingly, thermal damage can be suppressed even when
executing a reflow process of the protruding electrode, thereby the
thermal resistance of the resin can be lowered and low hygroscopic
resin can be selected.
[0027] Moreover, as for a method of manufacturing a semiconductor
device according to an embodiment of the present invention, the
resin is arranged only at corners of the second semiconductor
package. Accordingly, even when the gap between the first
semiconductor package and the second semiconductor package is
narrow, the resin can be filled between the first semiconductor
package and the second semiconductor package, while suppressing
complication of the manufacturing process.
[0028] A method of manufacturing a semiconductor device according
to an embodiment of the present invention includes: providing flux
that contains resin on lands formed on the first semiconductor
package; arranging solder balls provided on a second semiconductor
package on lands provided with the flux that contains resin; and
melting the solder balls to bond the solder balls to the lands by
executing a reflow process while making the resin, contained in the
flux that contains resin, crawl up the surface of the solder
balls.
[0029] Accordingly, by executing a reflow process of the solder
balls, the resin can be arranged to contact the peripheries of the
protruding electrodes, and thus detachment between the first
semiconductor package and the second semiconductor package can be
suppressed while the displacement at the time of mounting a stacked
semiconductor package on a motherboard can be prevented without
complicating the manufacturing process.
BRIEF DESCRIPTION OF THE DRAWINGS
[0030] FIG. 1 shows a sectional view illustrating a schematic
structure of a semiconductor device according to a first
embodiment.
[0031] FIGS. 2A-D show sectional views illustrating an example of a
method of manufacturing a semiconductor device of FIG. 1.
[0032] FIG. 3 shows a sectional view illustrating a schematic
structure of a semiconductor device acceding to a second
embodiment.
[0033] FIG. 4 shows a sectional view illustrating a schematic
structure of a semiconductor device according to a third
embodiment.
[0034] FIG. 5 shows a sectional view illustrating a schematic
structure of a semiconductor device according to a fourth
embodiment.
[0035] FIG. 6 shows a sectional view illustrating a schematic
structure of a semiconductor device according to a fifth
embodiment.
[0036] FIGS. 7A-D show sectional views illustrating an example of a
method of manufacturing a semiconductor device of FIG. 6.
[0037] FIGS. 8A-B show plan views illustrating schematic structures
of semiconductor devices according to a sixth and a seventh
embodiments.
[0038] FIGS. 9A-C show sectional views illustrating an example of a
method of manufacturing a semiconductor device according to an
eighth embodiment.
DETAILED DESCRIPTION
[0039] Hereinafter, a semiconductor device and a method of
manufacturing the same according to embodiments of the present
invention will be described with reference to drawings. FIG. 1
shows a sectional view illustrating an outline structure of a
semiconductor device according to a first embodiment of the present
invention.
[0040] In FIG. 1, a semiconductor package PK1 has a carrier
substrate 1 provided therein, and lands 2a and 2b are formed on
both surfaces of the carrier substrate 1. Then, on the carrier
substrate 1, a semiconductor chip 3 is flip-chip mounted, and
protruding electrodes 4 for flip-chip mounting are formed on the
semiconductor chip 3. Then, the protruding electrodes 4, which are
formed on the semiconductor chip 3, are bonded by ACF (Anisotropic
Conductive Film) bonding to the lands 2b through an anisotropic
conductive sheet 5.
[0041] On the other hand, a semiconductor package PK2 has a carrier
substrate 11 provided therein, and lands 12 are formed on the back
surface of the carrier substrate 11, and protruding electrodes 13
are formed on the lands 12. Moreover, a semiconductor chip (hidden
from view) is mounted on the carrier substrate 11, and the carrier
substrate 11, where the semiconductor chip is mounted, is sealed by
sealing resin 14. In addition, on the carrier substrate 11, a
semiconductor chip that is wire bonded may be mounted, or the
semiconductor chip may be flip-chip mounted, or a stacked structure
of semiconductor chips may be mounted.
[0042] Then, by bonding the protruding electrodes 13 to the lands
2b that are formed on the carrier substrate 1, the semiconductor
package PK2 is mounted on the semiconductor package PK1 so that the
carrier substrate 11 is arranged above the semiconductor chip 3.
Moreover, resin 15 is provided between the semiconductor packages
PK1 and PK2 so as not to contact the semiconductor chip 3. The
resin 15 may be provided in the peripheries of the protruding
electrodes 13 so as to contact each of the protruding electrodes
13.
[0043] Accordingly, the resin 15 can be filled between the
semiconductor packages PK1 and PK2, leaving a gap between the
semiconductor packages PK1 and PK2, which are bonded through the
protruding electrodes 13. For this reason, the moisture contained
in the resin between the semiconductor packages PK1 and PK2 can be
easily drained out, thereby suppressing the resin 15 between the
semiconductor packages PK1 and PK2 from expanding when executing
re-reflow at the time of mounting the semiconductor package on a
motherboard. Consequently, detachment between the semiconductor
packages PK1 and PK2 can be suppressed, while enabling the
semiconductor packages PK1 and PK2 to be firmly fixed with resin
15, and thus displacement between the semiconductor packages PK1
and PK2 can be suppressed even when executing re-reflow of the
protruding electrodes 13 at the time of mounting the semiconductor
package on a motherboard.
[0044] Moreover, even when the resin 15 is provided between the
semiconductor packages PK 1 and PK2 so as to leave a gap between
the semiconductor packages PK1 and PK2 by providing the resin 15 in
the peripheries of the protruding electrodes 13 while contacting
each of the protruding electrodes 13, it is not necessary to leave
a gap between the resin 15 and the protruding electrodes 13. For
this reason, it is not necessary to secure a separate region for
arranging the resin 15 against each of the protruding electrodes 13
between the semiconductor packages PK1 and PK2, and thus the resin
15 can be provided between the semiconductor packages PK1 and PK2
while suppressing the reduction of the number of arranged
protruding electrodes 13.
[0045] In addition, as for the carrier substrates 1 and 11, for
example, a double-sided substrate, a multilayer-interconnection
substrate, a build-up substrate, a tape substrate, or a film
substrate or the like can be used. As for the material of the
carrier substrates 1 and 11, for example, a polyimide resin, a
glass epoxy resin, BT resin, a composite of aramid and epoxy, a
ceramic or the like can be used. Moreover, as for the protruding
electrodes 4, 6 and 13, for example, Au bump, Cu bump and Ni bump
covered with a solder material or the like, or a solder ball can be
used.
[0046] Furthermore, when bonding the semiconductor packages PK1 and
PK2 to each other through the protruding electrodes 13, metal
bonding such as solder bonding and alloy bonding may be used or
pressure-welding bonding such as ACF bonding, NCF (Nonconductive
Film) bonding, ACP (Anisotropic Conductive Paste) bonding, and NCP
(Nonconductive Paste) bonding may be used.
[0047] FIGS. 2A-D show sectional views illustrating an example of a
method of manufacturing the semiconductor device of FIG. 1. In FIG.
2(a), when stacking the semiconductor package PK2 on the
semiconductor package PK1, underfill flux 7 is provided on lands 2b
of the carrier substrate 1, while forming solder balls as the
protruding electrodes 13 on lands 12 of the semiconductor package
PK2. The underfill flux 7 is resin mixed flux, and soldering and
bonding can be executed simultaneously using thermosetting resin as
a base.
[0048] Next, as shown in FIG. 2(b), the semiconductor package PK2
is mounted on the semiconductor package PK1. Then, by executing a
reflow process of the protruding electrodes 13, the protruding
electrodes 13 are melted and the protruding electrodes 13 are
bonded to the lands 2b, while making the resin contained in the
underfill flux 7 crawl up (e.g., move, migrate, or the like) along
the electrodes 13 so as to contact the peripheries of the
protruding electrodes 13, thereby the resin 15 is formed between
the semiconductor packages PK1 and PK2.
[0049] The resin 15 can be arranged to contact the peripheries of
the protruding electrodes 13 by executing the reflow process of the
protruding electrodes 13 by using the underfill flux 7, thereby
enabling the resin 15 to be formed between the semiconductor
packages PK1 and PK2 without complicating the manufacturing
process. Moreover, underfill paste (solder paste containing
thermosetting resin) may be used besides the underfill flux 7.
[0050] Moreover, by providing the resin 15 in the peripheries of
the protruding electrodes 13, the resin 15 can be provided between
the semiconductor packages PK1 and PK2 while securing space for
releasing moisture contained in the resin 15, thereby the residual
amount of moisture contained in the resin 15 can be reduced. Next,
as shown in FIG. 2(c), protruding electrodes 6 for mounting the
carrier substrate 1 on a motherboard 8 are formed on the lands 2a
provided on the back surface of the carrier substrate 1.
[0051] Next, as shown in FIG. 2(d), the carrier substrate 1 where
the protruding electrodes 6 are formed is mounted on the
motherboard 8. Then, the protruding electrodes 6 are bonded to
lands 9 of the motherboard 8 by executing a reflow process of the
protruding electrodes 6. In a condition that moisture contained in
the resin 15 between the semiconductor packages PK1 and PK2 is
almost all removed, the reflow process of the protruding electrodes
6 can be executed. Accordingly, the expansion of the resin 15 can
be suppressed at the time of reflow of the protruding electrodes 6,
thereby the semiconductor packages PK1 and PK2 can be prevented
from being detached from each other. Moreover, even when executing
re-reflow of the protruding electrodes 13 at the time of the reflow
of the protruding electrodes 6, the condition that the
semiconductor packages PK1 and PK2 are fixed to each other by the
resin 15 can be maintained, and thus displacement between the
semiconductor packages PK1 and PK2 can be prevented.
[0052] Moreover, although in the above-described embodiment, in
order to mount the semiconductor package PK2 on the semiconductor
package PK1,
[0053] a method of forming the electrodes 13 on the land 12 of the
carrier substrate 11, while providing the underfill flux on the
lands 2b of the carrier substrate 1 has been described, underfill
flux 7 may be provided on the lands 12 of the carrier substrate 11
while forming the protruding electrodes 13 on the lands 2b of the
carrier substrate. Moreover, although in the above-described
embodiment, a method of providing the resin 15 in the peripheries
of the protruding electrodes 13 so as to contact each of the
protruding electrodes 13 by using the underfill flux 7 has been
described, the underfill flux 7 is not necessarily so needed. For
example, resin may be filled in the peripheries of the protruding
electrodes 13 after having bonded the semiconductor packages PK1
and PK2 through the protruding electrodes 13. Moreover, although in
the above-described embodiment, a method of providing the resin 15
in the peripheries of the protruding electrodes 13 so that the
resin 15 is divided between the protruding electrodes 13 has been
described, the resin may be connected between a plurality of the
protruding electrodes 13. Moreover, although in the above-described
embodiment, a method of providing the resin 15 in the peripheries
of all the protruding electrodes 13 provided between the
semiconductor packages PK1 and PK2 has been described, the resin
may be provided in the peripheries of only some of the protruding
electrodes 13 provided between the semiconductor packages PK1 and
PK2. Furthermore, when providing the resin in the peripheries of
the protruding electrodes 13, the protruding electrodes 13 may be
bonded through a resin sheet, which has been formed corresponding
to the positions for arranging the protruding electrodes 13.
[0054] FIG. 3 shows a sectional view illustrating an outline
structure of a semiconductor device according to a second
embodiment of the present invention. In FIG. 3, a semiconductor
package PK11 has a carrier substrate 21 provided therein and lands
22a and 22c are formed on both surfaces of the carrier substrate
21, and internal wirings 22b are formed inside the carrier
substrate 21. Then, on the carrier substrate 21, a semiconductor
chip 23 is flip-chip mounted, and protruding electrodes 24 for
flip-chip mounting are formed on the semiconductor chip 23. Then,
protruding electrodes 24, which are formed on the semiconductor
chip 23, are bonded to the lands 22c by ACF bonding through an
anisotropic conductive sheet 25. Moreover, on lands 22a formed on
the back surface of the carrier substrate 21, protruding electrodes
26 for mounting the carrier substrate 21 on a motherboard are
formed.
[0055] On the other hand, a semiconductor package PK12 has a
carrier substrate 31 provided therein and lands 32a and 32c are
formed on both surfaces of the carrier substrate 31, while internal
wirings 32b are formed inside the carrier substrate 31. Then, on
the carrier substrate 31, a semiconductor chip 33a is face-up
mounted through a bonding layer 34a, and the semiconductor chip 33a
is wire bonded to the lands 32c through_wire 35a. Furthermore, on
the semiconductor chip 33a, a semiconductor chip 33b is face-up
mounted, avoiding the conductive wire 35a, and the semiconductor
chips 33b is fixed on the semiconductor chips 33a through an
bonding layer 34b, while being wire-bonded to the lands 32c through
conductive wire 35b.
[0056] Moreover, on the lands 32a formed on the back surface of the
carrier substrate 31, protruding electrodes 36 for mounting the
carrier substrate 31 on the carrier substrate 21 are formed so as
to hold the carrier substrate 31 above the semiconductor chip 23.
The protruding electrodes 36 are arranged to avoid the region for
mounting the semiconductor chip 23, and for example, the protruding
electrodes 36 may be arranged in the periphery of the back surface
of the carrier substrate 31. Then, the carrier substrate 31 is
mounted on the carrier substrate 21 by bonding the protruding
electrodes 36 to the lands 22c formed on the carrier substrate
21.
[0057] Moreover, sealing resin 37 is provided on a surface of the
carrier substrate 31, which is the mounting side of the
semiconductor chips 33a and 33b, and the semiconductor chips 33a
and 33b are sealed by the sealing resin 37. When sealing the
semiconductor chips 33a and 33b by the sealing resin 37, molding,
which uses a thermosetting resin such as an epoxy resin, can be
executed.
[0058] Moreover, resin 38 is provided between the carrier
substrates 21 and 31, which are bonded through the protruding
electrodes 36 so as to leave space between the carrier substrates
21 and 31. The resin 38 can be provided in the peripheries of the
protruding electrodes 36 so as to contact each of the protruding
electrodes 36. Accordingly, when stacking different types of
packages, the resin 38 can be provided between the carrier
substrates 21 and 31 in a condition that the gap is left between
the carrier substrates 21 and 31, which are bonded through the
protruding electrodes 36. Therefore, space savings at the time of
mounting different sizes or types of semiconductor chips 23, 33a,
and 33b can be attained. Furthermore, detachment between the
semiconductor packages PK11 and P12 can be suppressed, while
preventing displacement at the time of mounting the stacked
semiconductor packages PK11 and P12 on a motherboard.
[0059] FIG. 4 shows a sectional view illustrating an outline
structure of a semiconductor device according to a third embodiment
of the present invention. In FIG. 4, a semiconductor package PK31
has a carrier substrate 41 provided therein and lands 42a and 42c
are formed on both surfaces of the carrier substrate 41, and
internal wirings 42b are formed inside the carrier substrate 41.
Then, on the carrier substrate 41, a semiconductor chip 43 is
flip-chip mounted, and protruding electrodes 44 for flip-chip
mounting are formed on the semiconductor chip 43. Then, the
protruding electrodes 44, which are formed on the semiconductor
chip 43, are bonded to the lands 42c by ACF bonding through an
anisotropic conductive sheet 45. Moreover, on the lands 42a formed
on the back surface of the carrier substrate 41, protruding
electrodes 46 for mounting the carrier substrate 41 on a
motherboard are formed.
[0060] On the other hand, a semiconductor package PK32 has a
semiconductor chip 51 provided therein and the semiconductor chip
51 has electrode pads 52 provided thereon, while an insulating
layer 53 is formed so that the electrode pads 52 are exposed. Then,
on the semiconductor chip 51, a stress-relieving layer 54 is formed
so that the electrode pads 52 are exposed. Furthermore, on the
electrode pads 52, re-routing wirings 55, which are extended on the
stress-relieving layer 54, are formed. Then, on the re-routing
wirings 55, a solder-resist film 56 is formed, and on the
solder-resist film 56, an opening 57, which exposes the re-routing
wirings 55 on the stress-relieving layers 54, is formed. Then, on
the re-routing wirings 55, which are exposed through the opening
57, protruding electrodes 58 for face-down mounting the
semiconductor chip 51 on the carrier substrate 41 are formed so
that the semiconductor package PK32 is held above the semiconductor
chip 43.
[0061] The protruding electrodes 58 can be arranged to avoid the
region for mounting the semiconductor chip 43. For example, the
protruding electrodes 58 can be arranged in the periphery of the
semiconductor chip 51. Then, the protruding electrodes 58 are
bonded on the lands 42c formed on the carrier substrate 41, and the
semiconductor package PK32 is mounted on the carrier substrate 41.
Moreover, resin 59 is provided between the carrier substrate 41 and
the semiconductor chip 51, which are bonded through the protruding
electrodes 58, so as to leave space between the carrier substrate
41 and the semiconductor chip 51. The resin 59 may be provided in
the peripheries of the protruding electrodes 58, contacting each of
the protruding electrodes 58.
[0062] Accordingly, even when stacking a W-CSP (wafer
level-chip-size package) on the semiconductor package PK31, the
resin 59 can be provided between the carrier substrate 41 and the
semiconductor chip 51 in a condition that a gap is left between the
carrier substrates 41 and the semiconductor chips 51, which are
bonded through protruding electrodes 58. Therefore, even in the
case that types or sizes of the semiconductor chips 43 and 51 are
different, the semiconductor chip 51 can be three-dimensionally
mounted above the semiconductor chip 43 without interposing a
carrier substrate between the semiconductor chips 43 and 51.
Furthermore, this enables the suppression of detachment between the
semiconductor packages PK31 and PK32, while preventing displacement
of the stacked semiconductor packages PK31 and PK32 at the time of
mounting on a motherboard. Consequently, degradation of the
reliability of the semiconductor chips 43 and 51, which are
three-dimensionally mounted, can be suppressed, and increase of the
height at the time of stacking the semiconductor chips 43 and 51
can be suppressed, thereby space savings at the time of mounting
the semiconductor chips 43 and 51 can be attained.
[0063] FIG. 5 shows a sectional view illustrating an outline
structure of a semiconductor device according to a fourth
embodiment of the present invention. In FIG. 5, a semiconductor
package PK41 has a carrier substrate 61 provided therein, and lands
62a and 62b are formed on both surfaces of the carrier substrate
61. Then, on the carrier substrate 61, a semiconductor chip 63 is
flip-chip mounted, and protruding electrodes 64 for flip-chip
mounting are formed on the semiconductor chip 63. Then, protruding
electrodes 64, which are formed on the semiconductor chip 63, are
bonded to the lands 62b by ACF bonding through an anisotropic
conductive sheet 65.
[0064] On the other hand, a semiconductor package PK42 has a
carrier substrate 71 provided therein, and lands 72 are formed on
the back surface of the carrier substrate 71, and protruding
electrodes 73 are formed on the lands 72. Moreover, a semiconductor
chip (hidden from view) is mounted on the carrier substrate 71, and
the carrier substrate 71 where the semiconductor chip is mounted is
sealed by sealing resin 74. On the carrier substrate 71, a
semiconductor chip which is wire bonded may be mounted, or a
semiconductor chip may be flip-chip mounted, or a stacked structure
of semiconductor chips may be mounted.
[0065] Then, by bonding the protruding electrodes 73 on the lands
62b that are formed on the carrier substrate 61, the semiconductor
package PK42 is mounted on the semiconductor package PK41 so that
the carrier substrate 71 is arranged above the semiconductor chip
63. Resin 76 is provided between the semiconductor package PK42 and
the semiconductor chip 63, and the semiconductor package PK42 and
the semiconductor chip 63 are fixed through the resin 76.
[0066] Moreover, resin 75 is provided between the semiconductor
packages PK41 and PK42, and the resin 75 can be provided in the
peripheries of the protruding electrodes 73, contacting each of the
protruding electrodes 73. Accordingly, the resin 75 can be provided
between the semiconductor packages PK41 and PK42 in a condition
that a gap is left between the semiconductor packages PK41 and
PK42, which are bonded through the protruding electrodes 73, and
the bonding strength between the semiconductor packages PK41 and
PK42 can be reinforced by the resin 76. For this reason, even in
the case where quantity of the resin 75 provided between the
semiconductor packages PK41 and PK42 is small, displacement between
the semiconductor packages PK41 and PK42 can be prevented when
executing re-reflow of the protruding electrodes 73 at the time of
mounting on a motherboard. Moreover, detachment between the
semiconductor packages PK41 and PK42 can be suppressed by
suppressing the resin 75 between the semiconductor packages PK41
and PK42 from expanding when executing a reflow of the protruding
electrodes 66 at the time of mounting on a motherboard.
[0067] FIG. 6 shows a sectional view illustrating an outline
structure of a semiconductor device according to a fifth embodiment
of the present invention. In FIG. 6, a semiconductor package PK51
has a carrier substrate 81 provided therein, and lands 82a and 82b
are formed on both surfaces of the carrier substrate 81. Then, on
the carrier substrate 81, a semiconductor chip 83 is flip-chip
mounted, and protruding electrodes 84 for flip-chip mounting are
formed on the semiconductor chip 83. Then, the protruding
electrodes 84, which are formed on the semiconductor chip 83, are
bonded to the lands 82b by ACF bonding through an anisotropic
conductive sheet 85.
[0068] On the other hand, a semiconductor package PK52 has a
carrier substrate 91 provided therein, and lands 92 are formed on
the back surface of the carrier substrate 91, and protruding
electrodes 93 are formed on the lands 92. Moreover, a semiconductor
chip (hidden from view) is mounted on the carrier substrate 91, and
the carrier substrate 91 where the semiconductor chip is mounted is
sealed by sealing resin 94. On the carrier substrate 91, a
semiconductor chip which is wire bonded may be mounted, or a
semiconductor chip may be flip-chip mounted, or a stacked structure
of semiconductor chips may be mounted.
[0069] Then, by bonding protruding electrodes 93 on the lands 82b
that are formed on a carrier substrate 81, the semiconductor
package PK52 is mounted on the semiconductor package PK51 so that
the carrier substrate 91 is arranged above the semiconductor chip
83. Moreover, resin 95 is provided between the semiconductor
packages PK51 and PK52 so as not to contact the protruding
electrodes 93, and the resin 95 can be arranged only at the four
corners of the semiconductor package PK52, for example. The resin
95 may also be arranged along the sides of the semiconductor
package PK52.
[0070] Accordingly, in a condition that a gap is left between the
semiconductor packages PK51 and PK52, which are bonded through the
protruding electrodes 93, the resin 95 can be provided between the
semiconductor packages PK51 and PK52, while thermal damage to the
resin 95 can be suppressed even when executing a reflow process of
the protruding electrodes 93. Therefore, thermal resistance of the
resin 95 can be reduced and a low hygroscopic resin can be
selected, thereby the reliability of the stacked semiconductor
packages PK51 and PK52 can be improved.
[0071] In addition, in order to provide the resin 95 between the
semiconductor packages PK51 and PK52 so as not to contact the
protruding electrodes 93, a region without a protruding electrode
corresponding to the positions for arranging the resin 95 can be
provided. Accordingly, even when the protruding electrodes 93 are
densely arranged, the resin 95 can be filled between the
semiconductor packages PK51 and PK52 without contacting the
protruding electrodes 93. For this reason, multi-pin packaging of
the semiconductor packages PK51 and PK52 can be supported, while
displacement of the stacked semiconductor packages PK51 and PK52 at
the time of mounting on a motherboard can be prevented.
Furthermore, detachment between the semiconductor packages PK51 and
PK52 can be suppressed.
[0072] FIGS. 7A-D show sectional views illustrating an example of a
method of manufacturing the semiconductor device of FIG. 6. In FIG.
7(a), when stacking the semiconductor package PK52 on the
semiconductor package PK51, solder balls are formed on the lands 92
of the semiconductor package PK52, while flux 87 is provided on
lands 82b of the carrier substrate 81. Solder paste instead of the
flux 87 may be provided on the land 82b of the carrier substrate
81.
[0073] Next, as shown in FIG. 7(b), the semiconductor package PK52
is mounted on the semiconductor package PK51. Then, the protruding
electrodes 93 are melted by executing a reflow process of the
protruding electrodes 93, thereby the protruding electrodes 93 are
bonded on the lands 82b. Next, as shown in FIG. 7(c), by using a
dispenser or the like, the resin 95 is injected between the
semiconductor packages PK51 and PK52 so as not to contact the
protruding electrodes 93, and then resin 95 is cured.
[0074] By providing the resin 95 between the semiconductor packages
PK51 and PK52 so as not to contact the protruding electrodes 93, a
gap for accommodating and releasing moisture contained in the resin
95 can be secured, thereby the residual amount of moisture
contained in the resin 15 can be reduced, while the semiconductor
package of PK51 and PK52 can be fixed by the resin 95.
[0075] Next, as shown in FIG. 7(d), protruding electrodes 86 for
mounting the carrier substrate 81 on a motherboard are formed on
the lands 82a formed on the back surface of the carrier substrate
81. Then, the stacked structure of the semiconductor packages PK51
and PK52 can be mounted on the motherboard by mounting the carrier
substrate 81, where the protruding electrodes 86 are formed, on the
motherboard, and executing a reflow process of the protruding
electrodes 86.
[0076] The reflow process of the protruding electrodes 86 can be
executed in a condition that moisture contained in the resin 95
between the semiconductor packages PK51 and PK52 is almost all
removed. Accordingly, the expansion of the resin 95 can be
suppressed at the time of reflow of the protruding electrodes 86,
thereby the semiconductor packages PK51 and PK52 can be prevented
from being detached from each other. Moreover, even when executing
re-reflow of the protruding electrodes 93 at the time of the reflow
of the protruding electrodes 86, a condition that the semiconductor
packages PK51 and PK52 are fixed to each other by the resin 95 can
be maintained, and thus displacement between the semiconductor
packages PK51 and PK52 can be prevented.
[0077] FIG. 8(a) shows a plan view illustrating an outline
structure of a semiconductor device according to a sixth
embodiment. FIG. 8(b) shows a plan view illustrating an outline
structure of a semiconductor device according to a seventh
embodiment of the present invention. In FIG. 8(a), a semiconductor
chip 102 is mounted on a semiconductor package 101. Then, a
semiconductor package 103 is mounted on the semiconductor package
101 so as to be held above the semiconductor chip 102 through
protruding electrodes 104.
[0078] Moreover, resin 105 is provided between the semiconductor
packages 101 and 103, and the resin 105 is provided at the four
corners of the semiconductor package 103 so as not to contact the
protruding electrodes 104. Moreover, the protruding electrodes 104
are arranged on the semiconductor package 103, avoiding the region
for arranging the resin 105. Accordingly, even when the gap between
the semiconductor packages 101 and 103 is narrow, the resin 105 can
be easily filled between the semiconductor packages 101 and 103.
For this reason, displacement of the stacked semiconductor package
of 101 and 103 at the time of mounting on a motherboard can be
prevented, while suppressing complication of the manufacturing
process, thereby detachment between the semiconductor packages 101
and 103 can be suppressed. Moreover, by arranging the resin 105 at
the four corners of the semiconductor package 103, stress applied
to the semiconductor package 103 can be efficiently absorbed by the
resin 105, thereby impact resistance of the semiconductor package
103 can be improved.
[0079] In FIG. 8(b), a semiconductor chip 202 is mounted on a
semiconductor package 201. Then, a semiconductor package 203 is
mounted on the semiconductor package 201 so as to be held above the
semiconductor chip 202 through protruding electrodes 204. Then,
resin 205 is provided between the semiconductor packages 201 and
202, and the resin 205 is provided along (e.g., in the center of)
the sides of the semiconductor package 203 so as not to contact the
protruding electrodes 204. Moreover, the protruding electrodes 204
are arranged on the semiconductor package 203, avoiding the region
for arranging the resin 205.
[0080] Accordingly, even when the gap between the semiconductor
packages 201 and 203 is narrow, the resin 205 can be filled between
the semiconductor packages 201 and 203. For this reason,
displacement of the stacked semiconductor packages 201 and 203 at
the time of mounting on a motherboard can be prevented, while
suppressing complication of the manufacturing process. Furthermore
detachment between the semiconductor packages 201 and 203 can be
suppressed.
[0081] FIGS. 9A-C show sectional views illustrating an example of a
method of manufacturing a semiconductor device according to an
eighth embodiment of the present invention. In FIG. 9(a), a
semiconductor package PK61 has a carrier substrate 301 provided
therein, and lands 302a and 302b are formed on both surfaces of the
carrier substrate 301. Then, on the carrier substrate 301, a
semiconductor chip 303 is flip-chip mounted, and protruding
electrodes 304 for flip-chip mounting are formed on the
semiconductor chip 303. Then, the protruding electrodes 304, which
are formed on the semiconductor chip 303, are bonded to lands 302b
by ACF bonding through an anisotropic conductive sheet 305.
[0082] On the other hand, a semiconductor package PK62 has a
carrier substrate 311 provided therein, and lands 312 are formed on
the back surface of the carrier substrate 311, and protruding
electrodes 313 are formed on the lands 312. Moreover, a
semiconductor chip (hidden from view) is mounted on the carrier
substrate 311, and the carrier substrate 311, where the
semiconductor chip is mounted, is sealed by sealing resin 314.
[0083] Then, when stacking a semiconductor package PK62 on a
semiconductor package PK61, solder balls as protruding electrodes
313 are formed on the lands 312 of the semiconductor package PK62,
while flux 307 is provided on the lands 302b of the carrier
substrate 301. Solder paste instead of the flux 307 may be provided
on the land 302b of the carrier substrate 301. Moreover, resin 315
is provided to the region where lands 302b are not arranged on the
carrier substrate 301 by using a dispenser or the like.
[0084] Next, as shown in FIG. 9(b), the semiconductor package PK62
is mounted on the semiconductor package PK61. Then, the protruding
electrodes 313 are melted by executing a reflow process of the
protruding electrodes 313, thereby the protruding electrodes 313
are bonded to the lands 302b. When bonding the protruding
electrodes 313 to the lands 302b, it is preferable to maintain
resin 315 in an A-stage condition (a condition that resin softens
by increasing temperature), or a B-stage condition (a condition
that resin viscosity becomes high by increasing temperature).
Accordingly, the protruding electrodes 313 can be arranged relative
to the lands 302b in self-aligned manner by the surface tension
when the protruding electrodes 313 are melted, thereby the
semiconductor package PK62 can be arranged with a sufficient
precision on the semiconductor package PK61. Then, after the
protruding electrodes 313 have been bonded to the lands 302b, the
resin 315 is cured at a temperature lower than the temperature at
the time of the reflow of the protruding electrodes 313, and the
resin 315 is made to shift to a C-stage condition (a cured
condition).
[0085] By providing the resin 315 in a part of the gap between the
semiconductor packages PK61 and PK62, a gap for accommodating and
releasing moisture contained in the resin 315 can be secured,
thereby the residual amount of moisture contained in the resin 15
can be reduced, while enabling the semiconductor packages PK61 and
PK62 to be fixed by the resin 315.
[0086] Moreover, by providing the resin 315 on the semiconductor
package PK61 before stacking the semiconductor package PK62 on the
semiconductor package PK61, even in cases where the gap between the
semiconductor packages PK61 and PK62 is narrow after the stacking,
the resin 315 can be easily arranged to arbitrary positions between
the semiconductor packages PK61 and PK62. For this reason, the
resin 315 can be easily provided in a part, which is between the
semiconductor packages PK61 and PK62, considering various factors
like positions for arranging the semiconductor chip 303 and the
protruding electrodes 313, and stress applied to the semiconductor
packages PK61 and PK62 or the like, thereby the reliability of the
stacked structure of the semiconductor package of PK61 and PK62 can
be improved while suppressing complication of the manufacturing
process.
[0087] Next, as shown in FIG. 9(c), protruding electrodes 306 for
mounting a carrier substrate 301 on a motherboard are formed on the
lands 302a formed on the back surface of the carrier substrate 301.
Then, the stacked structure of the semiconductor packages PK61 and
PK62 can be mounted on the motherboard by mounting the carrier
substrate 301, where the protruding electrodes 306 are formed, on
the motherboard, and executing a reflow process of the protruding
electrodes 306.
[0088] The reflow process of the protruding electrodes 306 can be
executed in a condition that moisture contained in the resin 315
between the semiconductor packages PK61 and PK62 is almost all
removed. Accordingly, the expansion of the resin 315 can be
suppressed at the time of reflow of the protruding electrodes 306,
thereby the semiconductor packages PK61 and PK62 can be prevented
from being detached from each other. Moreover, even when executing
re-reflow of the protruding electrodes 313 at the time of the
reflow of the protruding electrodes 306, the condition that the
semiconductor packages PK61 and PK62 are fixed to each other by the
resin 315 can be maintained, and thus displacement between the
semiconductor packages PK61 and PK62 can be prevented.
[0089] The above-described semiconductor devices are applicable to
electronic apparatus such as a liquid crystal display device, a
cellular phone, Personal Digital Assistant, a video camera, a
digital camera, and an MD (Mini Disc) player, and enable
miniaturization and weight savings of the electronic apparatus to
be attained, while enabling the reliability of the electronic
apparatus to be improved. Although in the above-described
embodiments, methods of stacking semiconductor packages have been
described as examples, the present invention is not necessarily
limited to the methods of stacking semiconductor packages, and
others, including a ceramic element such as a surface acoustic wave
(SAW) element, optical elements such as a light modulator and an
optical switch, and various sensors such as a magnetic sensor, and
a bio-sensor, may be stacked, for example.
* * * * *