U.S. patent application number 10/825795 was filed with the patent office on 2007-07-19 for nanoengineered thermal materials based on carbon nanotube array composites.
Invention is credited to Carlos Dangelo, Jun Li, Meyya Meyyappan.
Application Number | 20070163769 10/825795 |
Document ID | / |
Family ID | 35059376 |
Filed Date | 2007-07-19 |
United States Patent
Application |
20070163769 |
Kind Code |
A9 |
Li; Jun ; et al. |
July 19, 2007 |
NANOENGINEERED THERMAL MATERIALS BASED ON CARBON NANOTUBE ARRAY
COMPOSITES
Abstract
A method for providing for thermal conduction using an array of
carbon nanotubes (CNTs). An array of vertically oriented CNTs is
grown on a substrate having high thermal conductivity, and
interstitial regions between adjacent CNTs in the array are partly
or wholly filled with a filler material having a high thermal
conductivity so that at least one end of each CNT is exposed. The
exposed end of each CNT is pressed against a surface of an object
from which heat is to be removed. The CNT-filler composite adjacent
to the substrate provides improved mechanical strength to anchor
CNTs in place and also serves as a heat spreader to improve
diffusion of heat flux from the smaller volume (CNTs) to a larger
heat sink.
Inventors: |
Li; Jun; (Sunnyvale, CA)
; Meyyappan; Meyya; (San Jose, CA) ; Dangelo;
Carlos; (Los Gatos, CA) |
Correspondence
Address: |
NASA AMES RESEARCH CENTER;ATTN: PATENT COUNSEL
MAIL STOP 202A-4
MOFFETT FIELD
CA
94035-1000
US
|
Prior
Publication: |
|
Document Identifier |
Publication Date |
|
US 20050224220 A1 |
October 13, 2005 |
|
|
Family ID: |
35059376 |
Appl. No.: |
10/825795 |
Filed: |
April 13, 2004 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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10390254 |
Mar 11, 2003 |
7094679 |
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10825795 |
Apr 13, 2004 |
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Current U.S.
Class: |
165/185 ;
257/E23.11; 361/705 |
Current CPC
Class: |
B82Y 30/00 20130101;
H01L 2924/01322 20130101; H01L 2924/15312 20130101; H01L 2224/16
20130101; H01L 2924/01046 20130101; H01L 2924/01079 20130101; H01L
2924/01019 20130101; H01L 23/373 20130101; B82Y 10/00 20130101;
H01L 2224/73253 20130101; H01L 2924/01078 20130101 |
Class at
Publication: |
165/185 ;
361/705 |
International
Class: |
H05K 7/20 20060101
H05K007/20 |
Goverment Interests
ORIGIN OF THE INVENTION
[0002] The invention described herein was made by employees of the
United States Government and may be manufactured and used by or for
the Government for governmental purposes without the payment of any
royalties thereon or therefor.
Claims
1. A method for providing for transport of thermal energy from an
object, the method comprising: providing an array of carbon
nanotubes, referred to herein as "CNTs," on a selected surface of a
selected substrate having high thermal conductivity, where at least
first and second CNTs in the array are oriented substantially
perpendicular to the selected surface; filling at least a portion
of an interstitial space between at least two adjacent CNTs in the
array with a selected filler material that has high thermal
conductivity so that the filler material makes contact with the
selected substrate surface at a first end of each of the at least
first and second CNTs and a second end of each of the at least
first and second CNTs is exposed and is not fully covered by the
filler material; and causing the exposed second end of at least one
of the first and second CNTs to make contact with a surface of an
object for which transport of thermal energy is to be provided.
2. The method of claim 1, further comprising causing said exposed
second ends of said at least first and second CNTs to make contact
with a surface of said object so that at least one of said exposed
second ends of said CNTs bends or buckles.
3. The method of claim 1, further comprising selecting said filler
material to include at least one of Cu, Ag, Au, Pt, Pd and a
metal-doped silicide.
4. The method of claim 1, further comprising providing a layer of a
selected catalyst, including at least one of Ni, Fe, Co, Pt and Al,
for growth of said array of said CNTs, on said selected surface of
said catalyst.
5. The method of claim 1, further comprising filling said portion
of said interstitial space with said filler material by a process
comprising at least one of chemical vapor deposition, physical
vapor deposition, plasma deposition, ion sputtering,
electrochemical deposition and casting from a liquid phase.
6. The method of claim 1, further comprising providing said exposed
second ends of said at least first and second CNTs by a process
comprising at least one of mechanical polishing,
chemical-mechanical polishing, wet chemical etching,
electrochemical etching and dry plasma etching.
7. Apparatus for providing for transport of thermal energy from an
object, the apparatus comprising: an array of carbon nanotubes,
referred to herein as "CNTs," on a selected surface of a selected
substrate having high thermal conductivity, where at least first
and second CNTs in the array are oriented substantially
perpendicular to the selected surface; a high thermal conductivity
material that fills at least a portion of an interstitial space
between at least two adjacent CNTs in the array so that the filler
material makes contact with the selected substrate surface at a
first end of each of the at least first and second CNTs and a
second end of each of the at least first and second CNTs is exposed
and is not fully covered by the filler material; and wherein the
exposed second end of at least one of the first and second CNTs
make contact with a surface of an object for which transport of
thermal energy is to be provided.
8. The apparatus of claim 7, wherein said exposed second ends of
said at least first and second CNTs make contact with a surface of
said object so that at least one of said exposed second ends of
said CNTs bends or buckles.
9. The apparatus of claim 7, wherein said filler material includes
at least one of Cu, Ag, Au, Pt, Pd and a metal-doped silicide.
10. The apparatus of claim 7, further comprising a layer of a
selected catalyst, including at least one of Ni, Fe, Co, Pt and Al,
deposited on said selected substrate surface for growth of said
array of said CNTs, on said selected substrate.
11. The apparatus of claim 7, wherein said portion of said
interstitial space is filled with said filler material by a process
comprising at least one of chemical vapor deposition, physical
vapor deposition, plasma deposition, ion sputtering,
electrochemical deposition and casting from a liquid phase.
12. The apparatus of claim 7, wherein said exposed second ends of
said at least first and second CNTs are provided by a process
comprising at least one of mechanical polishing,
chemical-mechanical polishing, wet chemical etching,
electrochemical etching and dry plasma etching.
13. The method of claim 1, further comprising providing said
exposed ends of said first and second CNTs in said array with an
exposed first length and an exposed second length, respectively,
that are not covered by said filler material, where the exposed
first length and the exposed second length are substantially
equal.
14. The method of claim 1, further comprising providing said
exposed ends of said first and second CNTs in said array with an
exposed first length and an exposed second length, respectively,
that are not covered by said filler material, where the exposed
first length is greater than the exposed second length.
15. The method of claim 14, further comprising causing said exposed
second end of said first CNT to make contact with a surface of said
object so that said exposed second end of said first CNT bends or
buckles.
16. The method of claim 14, further comprising causing said exposed
second ends of said first and second CNTs to make contact with a
surface of said object so that each of said exposed second ends of
said first and second CNTs bends or buckles.
17. The method of claim 1, further comprising: causing heat to be
removed directly from said object for which transport of thermal
energy is to be provided through said at least first and second
CNTs; and distributing a portion of the heat removed directly
through said at least first and second CNTs to said filler
material.
18. The method of claim 1, further comprising providing for said
transport of said thermal energy from said object with an
associated thermal resistance of no more than about 8
cm.sup.2-K/Watt.
19. The method of claim 1, further comprising providing for said
transport of said thermal energy from said object with an
associated thermal resistance of no more than about 0.1
cm.sup.2-K/Watt.
20. The apparatus of claim 7, wherein said exposed ends of said
first and second CNTs in said array have an exposed first length
and an exposed second length, respectively, that are not covered by
said filler material, where the exposed first length and the
exposed second length are substantially equal.
21. The apparatus of claim 7, wherein said exposed ends of said
first and second CNTs in said array have an exposed first length
and an exposed second length, respectively, that are not covered by
said filler material, where the exposed first length is greater
than the exposed second length.
22. The apparatus of claim 21, wherein said exposed second end of
said first CNT makes contact with a surface of said object so that
said exposed second end of said first CNT bends or buckles.
23. The apparatus of claim 21, wherein said exposed second ends of
said first and second CNTs make contact with a surface of said
object so that each of said exposed second ends of said first and
second CNTs bends or buckles.
24. The apparatus of claim 7, wherein: heat is removed directly
from said object for which transport of thermal energy is to be
provided through said at least first and second CNTs; and a portion
of the heat removed directly through said at least first and second
CNTs is distributed to said filler material.
25. The apparatus of claim 7, wherein said transport of said
thermal energy from said object occurs with an associated thermal
resistance of no more than about 8 cm.sup.2-K/Watt.
26. The apparatus of claim 7, wherein said transport of said
thermal energy from said object occurs with an associated thermal
resistance of no more than about 0.1 cm.sup.2-K/Watt.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. patent
application Ser. No. ______(ARC-15042-1), which is incorporated by
reference herein.
TECHNICAL FIELD
[0003] The present invention provides thermal conductors for small
components and devices, using carbon nanotube arrays.
BACKGROUND OF THE INVENTION
[0004] State-of-the-art integrated circuits (ICs) for
microprocessors routinely dissipate power densities on the order of
50 Watts/cm.sup.2. This large power is due to the localized heating
of ICs operating at high frequencies, and must be managed for
future high-frequency microelectronic applications. As the size of
components and devices for ICs and other appliances becomes
smaller, it becomes more difficult to provide heat dissipation and
transport for such components and devices. A thermal conductor for
a macro size thermal conductor is generally inadequate for use with
a micro size component or device, in part due to scaling
problems.
[0005] One consequence of increased component density in, and
compactness of, ICs manifests itself in the form of locally high
power consumption. An alarming rise in power density with respect
to each advancing technology generation has been observed in
mainstream microprocessor technologies. The need for addressing
this problem is imperative for next-generation IC packaging
technology. One potential solution is to find new packaging
materials that exhibit high thermal conductivity and that can
transfer heat from a local hot spot to a larger heat sink.
[0006] The cooling of an object by attaching it to a cold reservoir
is normally limited by the heat transfer rate across the interface.
Except for objects with atomically flat surfaces, practical objects
normally have only a very small portion of surface in contact with
other solid surfaces. Eutectic bonding materials or thermal
conducting pastes/films are normally applied at the interface to
increase the contact area. However, the thermal conductivities of
these eutectic bonding materials are normally orders of magnitude
lower than those of solid materials such as Cu and Si. The
interface thus remains the bottleneck for heat dissipation. Metal
film can be used to improve the thermal conductivity but is only
applicable for high pressure loading.
[0007] What is needed is a compliant thermal interface material
that efficiently and promptly dissipates or conducts heat from a
micro size component or device, preferably down to nanometer scale
systems, to a heat sink with a heat transfer rate that is
comparable to rates for macro size components and devices.
Preferably, the thermal conductor should be reusable and should
work with any surface, rough or smooth.
SUMMARY OF THE INVENTION
[0008] These needs are met by the invention, which uses an embedded
carbon nanotube array to provide one or more high performance
thermal conductors for applications that require large heat
dissipation. This approach also improves the mechanical strength of
carbon nanotubes (CNTs) so that the CNT array can remain stable and
can make good contact to the surface of objects that generate large
amount of heat, through use of reversible buckling and bending of
exposed portions of the CNTs. The extremely high thermal
conductivity along a carbon nanotube axis is employed to transfer
heat away from hot spots in a component or device. Copper and other
high thermal conductivity materials are deposited to fill
interstitial regions or gaps in a first part of a CNT array. This
composite structure provides mechanical strength to maintain the
CNTs in position and also serves as an efficient heat transfer
material to improve diffusion of heat flux from an individual CNT
to a larger surrounding volume.
[0009] The innovation uses vertically oriented CNT arrays to
increase the effective contact area (particularly for a rough
surface) while providing an extremely large thermal conductivity
along a CNT axis and across the interface. The fabrication involves
four steps: (1) substantially vertically aligned CNT arrays with a
preferred length of from 1 to 50 microns are grown on a solid
substrate (serving as a heat sink) that has good thermal
conductivity, such as Si wafers and metal blocks/films; (2) a first
portion of, or all of, interstitial spaces between adjacent CNTs
are filled with highly thermally conductive materials such as Cu,
Ag, Au, Pt or doped Si by chemical vapor deposition (CVD), physical
vapor deposition (PVD), plasma deposition, ion sputtering,
electrochemical deposition, or casting from liquid phase; (3)
filler materials are removed from a second portion of the
interstitial spaces by mechanical polishing (MP), chemical
mechanical polishing (CMP), wet chemical etching, electrochemical
etching, or dry plasma etching so that the top portion of the CNT
array is exposed, with the bottom part remaining embedded in the
filler materials; and (4) the embedded CNT array is applied against
an object that is to be cooled. CNTs can reversibly buckle or bend
one by one under low loading pressure so that a CNT can make
maximum contact with the object to be cooled, even an object with a
very rough surface.
[0010] Heat can be effectively transferred from the contacting
spots along the tube axis to the filler materials as well as the
substrates. The filler materials plays two critical roles: (a)
improving the mechanical stability, and (b) maximizing the thermal
conductivity. Choosing highly thermal conductive materials as the
filler matrix maximizes the heat transfer from the contact spots to
the substrate (i.e. the heat sink or cooling reservoir). An
embedded CNT array can be reused without damage or compromise of
its heat transport characteristics, in contrast to an approach that
relies upon eutectic bonding.
[0011] The invention improves the mechanical stability of a CNT
array by anchoring the lower portion of the array in a solid matrix
so that the array retains the integrity when pressed against the
heated object during mounting processes. The reversible buckling
and bending properties of a CNT array ensures a maximum physical
contact under a low loading pressure with the object surface,
whether the surface is atomically flat or very rough.
[0012] For a discrete multiwall carbon nanotube (MWCNT), the
thermal conductivity is expected to surpass 3000
Watts(meter).sup.-1K.sup.-1 along the tube axis, according to P.
Kim et al, Phys. Rev. Lett., vol. 87 (2001) 215502-1. Through the
use of DC-biased, plasma-enhanced chemical vapor deposition
(PECVD), as demonstrated by B. A. Cruden et al, Jour. Appl. Phys.,
vol. 94 (2003) 4070, one can fabricate vertically aligned MWCNT
arrays (sometimes referred to as carbon nanofiber arrays) on
silicon wafers of thickness .about.500 .mu.m and demonstrate their
possible application as a heat-sink device, conducting large
amounts of heat away from a localized area, such as in critical
"hot spots" in ICs.
[0013] This innovation is an outgrowth of an earlier NASA patent
application (NASA Ref. No. ARC-15042-1) which uses a CNT array as
an electrical interconnect material embedded in an SiO.sub.2
matrix. Here, a highly thermal conductive material, such as Cu, Ag,
and/or Si, replaces SiO.sub.2, used to control electrical
conduction in the earlier innovation.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] FIG. 1 illustrates a CNT array thermal conduction system
constructed according to the invention.
[0015] FIG. 2 schematically illustrates use of the invention.
[0016] FIGS. 3A and 3C illustrates apparatus used for thermal
resistance measurements.
[0017] FIG. 3B illustrates a packaging archotecture used in the
prior art.
[0018] FIGS. 4A and 4B are scanning electron microscope (SEM) cross
sectional and top-down microphotographs, respectively, of an
as-grown multiwall carbon nanotube array.
[0019] FIGS. 5A and 5B are SEM cross sectional and top-down
photomicrographs, respectively, of a CNT-Cu composite film.
[0020] FIGS. 6A and 6B are graphical views of thermal resistance
versus electrical power measurements for a first control sample and
Microfaze (FIG. 6A) and for a CNT-only film and for two different
CNT-Cu films (FIG. 6B).
[0021] FIGS. 7A and 7B are SEM photomicrographs of a CNT-Cu film,
taken before and after compressive thermal resistance measurements,
respectively.
DESCRIPTION OF BEST MODES OF THE INVENTION
[0022] FIG. 1 illustrates a procedure for practicing an embodiment
of the invention. In step 11, an array of substantially vertically
oriented CNTs is grown on a selected surface of a substrate that
has good thermal conductivity. The substrate may be a metal-doped
silicide, a diamond film, or a metallic substance having a maximum
electrical or thermal conductivity. Whether the array is patterned
or not, it is preferable to provide a thin CNT catalyst layer
(e.g., Ni, Fe, Co, Pd or Al or a combination thereof) having a
layer thickness of 2-50 nanometers (nm), or more if desired. When
the CNT is grown in an electrical field oriented substantially
perpendicular to the selected substrate surface, the CNTs can be
grown in greater lengths (1-50 .mu.m or more) in a direction
substantially parallel to the electrical field direction.
[0023] In step 12, interstitial spaces between adjacent CNTs are
partly or fully filled with a selected filler material that is
preferably a good thermal conductor (e.g., Cu, Ag, Au or
metal-doped silicon), in order to augment the transport of heat,
using chemical vapor deposition (CVD), physical vapor deposition
(PVD), plasma deposition, ion sputtering, electrochemical
deposition, or casting from liquid phase. Depending upon the
density of CNTs in the array and the filler material, the thermal
conductivity of the system is estimated to be in a range of
100-3000 Watts/(meter)-K, which is comparable to the thermal
conductivity of oriented graphite.
[0024] In step 13, a top portion of the filler material is removed
by mechanical polishing (MP), chemical mechanical polishing (CMP),
wet chemical etching, electrochemical etching, dry plasma etching,
or a combination thereof so that the top portion of the CNT array
is exposed.
[0025] In step 14 (optional), the thermal conduction system
provided by the steps 11, 12 and 13 is pressed or otherwise applied
to a surface (atomically smooth, rough or somewhere in between) of
an object from which heat is to be removed so that the exposed
portions of the CNTs will bend or buckle.
[0026] FIG. 2 schematically illustrates use of the system produced
by the procedure of FIG. 1 to remove heat from an object 25. An
array of CNTs 23-i (i=, . . . , I (I=8 in FIG. 2) is grown or
otherwise provided on a selected surface of a substrate 21 having
an optional catalyst layer 22. A layer of filler material 24,
having a depth that allows exposure of an upper portion of each CNT
23-i, is provided, for mechanical strengthening of the CNTs and for
improved diffusion of heat that initially travels only along the
CNTs (from the object 25). The CNTs 23-i are pressed against a
surface of an object 25, from which heat is to be removed, so that
many or all of the CNTs make contact with the (rough) object
surface and either bend (23-1, 23-3 and 23-7) or buckle (23-4, 23-6
and 24-8) in order to improve heat transport from the object.
[0027] A measurement apparatus, illustrated in FIG. 3A, including
two copper blocks, 31 and 32, four resistive cartridge heaters (not
shown) embedded in the upper block, and a cooling bath 33, is used
to measure the thermal resistance of a given material. The upper
copper block 31 is preferably surrounded by insulation (not shown)
to minimize heat loss to the ambient, with the exception of the one
square inch section designed to contact the material 34 to be
measured. The clamping pressure on the sample is controlled by
pneumatically manipulating the upper block. Heat is delivered to
the system by applying a constant power to the cartridge heaters.
The steady state temperature difference (.DELTA.T=T.sub.B-T.sub.C)
between the two blocks, 31 and 32, with the intervening sample 34,
was measured. From these data, the thermal resistance R of the
sample is calculated, as in Eq. (1), where Q is the total power (in
Watts), A is the sample cross-sectional area, CL is the constant
heat transfer coefficient and T.sub.B, T.sub.C, and T.sub.amb
represent the temperature of the upper block 31, the chilled lower
block 32 (T.sub.c=20.degree. C.), and the ambient environment,
respectively. The heat transfer coefficient C.sub.L is used to
estimate the heat loss to the ambient environment in this
measurement configuration and is determined by placing a thick
insulator between the two blocks and measuring the steady state
.DELTA.T at a variety of applied powers. This analysis yields a
constant heat transfer coefficient of C.sub.L=0.0939 Watts/K, which
is factored into the final determination of the measured thermal
resistance R. This coefficient C.sub.L represents the heat power
lost (in Watts) per degree Kelvin to the ambient environment. R = A
.function. ( T B - T C ) Q - C L .function. ( T B - T amb ) ( 1 )
##EQU1##
[0028] The dominant thermal resistance mechanism in this
measurement configuration is that of the contact interfaces between
the sample 34 and the copper blocks, 31 and 32. To minimize this
contact resistance, two steps were taken: (1) polishing both copper
blocks, 31 and 32, to reduce the effect of surface roughness and
(2) making use of a high thermally conductive, conformal material,
Microfaze A6 (available from AOS Thermal Compounds, LLC, New
Jersey) to reduce contact resistance on the backside of a silicon
wafer, the substrate on which the investigated films were
fabricated.
Sample Preparation
[0029] Carbon nanotubes were synthesized using the procedure and
reactor conditions reported by B. A. Cruden et al, op cit. The
resulting as-grown tubes are shown in cross section and top views
in FIGS. 4A and 4B, respectively. Using scanning electron
microscope (SEM) data, we estimate the length of the MWCNTs to be
about 7.5 .mu.m, with a possible range of 1-50 .mu.m.
[0030] Following nanotube synthesis, a high thermal conductivity
metal-like substance (e.g., Cu, Ag, Au, Pt or Pd) between
individual MWCNTs (also referred to as nanotube trenches) was
deposited through electrodeposition, using a three-electrode setup
with a one cm.sup.2 MWCNT array as the working electrode, a
Saturated Calomel Electrode (SCE) as the reference electrode, and a
one square inch platinum foil as the counter electrode (CE), set in
parallel with the MWCNT sample. Both the Cu substrate and the
MWCNTs serve as electrodes during the electrodeposition.
[0031] Various additives are optionally added to the solution to
achieve optimum gap filling into the high-aspect-ratio, forest-like
MWCNT arrays. The recipe of the electrolyte solution used in this
study is based on the methodology reported for deep-trench filling
of Cu interconnects for damascene processes, as reported by K.
Kondo et al, Jour. Electroanalytical Chem., vol. 559 (2003) 137. We
begin with a stock solution comprised of copper sulfate
(CuSO.sub.4.5H.sub.2O), sulfuric acid (H.sub.2SO.sub.4), and sodium
chloride (NaCl). Polyethylene glycol (PEG) is added to inhibit
copper deposition at the tips of the nanotubes when in the presence
of Cl.sup.- ions. Janus Green B (JGB) is also added for its
deposition inhibiting properties. Bis(3-sulfopropyl)disulfide (SPS)
is included to increase local current density at the bottom of the
nanotube trenches, thus enhancing the superfilling of high-aspect
ratio trenches. The final solution, including concentrations used
in the bath, is shown in Table I. Typically, the Cu was deposited
at -0.20 to -0.30 V (vs. SCE) at a deposition rate of about 430
nm/min. The resulting CNT-Cu composite material is shown in FIGS.
5A and 5B.
[0032] FIG. 3C illustrates typical packaging architecture, as
discussed by R. Viswanath et al, Intel Tech. Jour Q3 (2000),
including a heat sink (fins and heat spreader) 41 are contiguous to
a thin interface (phase change film, grease, etc.) 42, which is
contiguous to a thin silicon layer 43. A heat delivery array 45
contacts the silicon array back surface 43 through a conductive gel
or epoxy 44. This system requires use of greases, phase change
films, thermally conductive gels and/or special epoxies and is
quite complex. TABLE-US-00001 TABLE I Electrochemical bath
composition for copper deposition Bath Chemical/Additive
(concentration unit) Concentration CuSO.sub.4.5H.sub.2O (mol/L) 0.6
H.sub.2SO.sub.4 (mol/L) 1.85 NaCl (ppm) 100 PEG, molar mass: 8000
(ppm) 400 JGB (ppm) 10 SPS (ppm) 10
Results and Discussion
[0033] To summarize the structure used, FIG. 3B illustrates the
equivalent thermal resistance model for the CNT-Cu composite
sample. The resistance of the CNT-Cu composite can be obtained by
de-embedding the thermal resistance contribution of the copper
block (R.sub.Cu-block), silicon wafer (R.sub.Si), and the Microfaze
material (R.sub..mu.Faze) The thermal resistance of the copper
block, R.sub.Cu-block, must be taken into account due to the
placement of the thermocouple (approximately one inch from the
copper block surface). From bulk calculations, R.sub.Cu-block for
this configuration can be estimated as 0.95 cm.sup.2K/Watt. To
summarize, one can determine the resistance of the CNT/Cu composite
film by Eq. (2).
R.sub.CNT/Cu=R.sub.total-R.sub.Cu-block-R.sub.Si-R.sub..mu.Faze.
(2)
[0034] R.sub..mu.Faze is determined using two control measurements.
The first measurement involves measuring the thermal resistance of
a piece of silicon with Microfaze on the backside of the wafer,
resulting in
R.sub.control=R.sub.Cu-block+R.sub.block-Si+R.sub..mu.Faze, where
R.sub.block-Si is the interface resistance between the copper block
and silicon wafer. The second resistance measurement involves a
piece of double-sided polished silicon, resulting in
R.sub.control,2=2R.sub.block-Si+R.sub.Si. Assuming that both Si--Cu
interfaces in the second control measurement are similar, one can
divide this value in half and use the simple relation in Eq. (3).
R.sub..mu.Faze=R.sub.control,1-(R.sub.control,2-R.sub.Si)/2-R.sub.Cu-bloc-
k. (3) The intrinsic silicon contribution (R.sub.Si) to the thermal
resistance in Eqs. (2) and (3) can be neglected. For the 500 .mu.m
thick silicon wafer used in this study, the intrinsic silicon
thermal resistance can be calculated as 0.034 cm.sup.2K/Watt, which
is two orders of magnitude less than the final measured values of
the CNT-Cu sample, and is thus negligible. One caveat to this
analysis is in regards to the thermal resistance of Microfaze with
respect to the amount of power applied to the upper block. The
thermal resistance of the first control sample decreases
approximately exponentially with increasing power, corresponding to
different temperature gradients, but can be corrected for in the
final analysis as will be demonstrated. The double-sided, polished
silicon sample shows no power dependence and exhibits a
substantially constant resistance of R=11.10 cm.sup.2K/Watt,
resulting in 5.55 cm.sup.2K/Watt per silicon interface. Subtracting
the silicon resistance, which is constant with respect to applied
power, one can also determine R.sub..mu.Faze at different powers.
The power dependence of the Microfaze is illustrated in FIG.
6A.
[0035] Now that the power dependence of the Microfaze material is
quantified, one proceeds with the analysis of the CNT/Si/Microfaze
and CNT-Cu/Si/Microfaze stacks. From the previous discussion, one
expects these samples to exhibit the same power dependence, which
indeed is the case and is clearly seen in FIG. 6B. Combining the
power dependence with the measurements in FIG. 6B we summarize the
values of measured thermal resistance in Table II. All measurements
were performed at similar clamp pressures, 6.8 psi. Errors
contributing to the standard deviation in the measurements can be
attributed primarily to two factors: (1) variations in contact area
due to varying CNT length distribution (see FIG. 4A); and (2)
variations in measurement of total power, .DELTA.T, and ambient
temperature loss. However, even at the upper bounds of the measured
thermal resistance values for the CNT-Cu composite films, this
worst-case scenario represents values that are on the order of the
thermal budgets for a variety of commercial microprocessor systems.
TABLE-US-00002 TABLE II Thermal Resistance Measurement Summary
Thermal Resistance Material (cm.sup.2K/W) .+-. STDEV CNT film 2.30
.+-. 0.33 CNT-Cu composite film (#1) 0.84 .+-. 0.22 CNT-Cu
composite film (#2) 0.92 .+-. 0.13 Bare double-sided silicon 11.10
.+-. 0.65
[0036] The Cu deposited in the MWCNT array used in this study was
not a solid film. Instead, the Cu forms a porous film with
.about.70% Cu and CNTs and .about.30% voids. This configuration
increases the mechanical strength so that the sample can be
repeatedly and reproducibly measured under different clamping
pressures. In addition, this configuration provides spaces so that
the composite film can be deformed to make maximal contact with the
hot surface. However, studies conducted on the buckling force of
discrete MWCNTs, by H Dai et al, Nature, vol. 384 (1996) 147, by H.
Dai et al, Appl. Phys. Lett. Vol. 73 (1998) 1508, and by J. Li et
al (Surf. And Interf. Analysis, vol. 28 (1999) 8, demonstrate the
tremendous amount of force per unit cross sectional area that these
structures can withstand. Based on this analysis, we speculate that
most nanotubes do not buckle under the force applied in this
preliminary study, which is roughly two orders of magnitude less
than the calculated CNT buckling force. SEM characterization before
and after the thermal resistance measurement (FIGS. 7A and 7B,
respectively) shows no effect on the CNT-Cu composite after
compressive stress. This approach assumes that most CNTs are bent
or buckled to give maximum contact under low pressure (no more than
20 psi in IC packaging), which pressure can be achieved by suitable
choice of length and diameter of exposed portions of the CNTs
[0037] The thermal resistance at the interface can be further
reduced by optimizing the invented interface materials and
packaging technology. More particularly, the contact area at low
loading pressure (less than 20 psi) can be increased by optimizing
the length of the exposed CNTs (which results in lower buckling and
bending force). The thermal conductivity of Cu filled in
interstitial space can be also increased by improving the integrity
of the Cu material. With such optimization implemented, the thermal
resistance is expected to be reduced below 0.1 cm.sup.2K/Watt which
is even better than eutectic binding used today, and can be
efficiently used for heat dissipation over 100 Watts/cm.sup.2 for
future IC chips.
[0038] These preliminary results demonstrate the fundamental
usefulness of CNTs and CNT-Cu composite films as efficient heat
conductors. Our analysis confirms that these novel thermal
conductivity layers can accomplish effective heat conduction by
increasing contact area. In addition, the CNTs provide the added
benefits of high mechanical stability and reusability.
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