U.S. patent application number 11/624703 was filed with the patent office on 2007-05-24 for method for patterning hfo2-containing dielectric.
Invention is credited to Jeng-Huey Hwang, Jiunn-Ren Hwang, Chien-Ting Lin, Wei-Tsun Shiau.
Application Number | 20070117304 11/624703 |
Document ID | / |
Family ID | 35657768 |
Filed Date | 2007-05-24 |
United States Patent
Application |
20070117304 |
Kind Code |
A1 |
Hwang; Jeng-Huey ; et
al. |
May 24, 2007 |
METHOD FOR PATTERNING HFO2-CONTAINING DIELECTRIC
Abstract
A wafer has a trench, a STI layer formed in the trench, an
HfO2-containing gate dielectric covering the wafer and the STI
layer, a gate electrode formed on the HfO2-containing gate
dielectric, and at least a spacer formed beside the gate electrode.
An ion bombardment utilizing Ar, He, O2, CHF3 or mixture thereof is
performed to convert the exposed HfO2-containing gate dielectric to
an intergraded layer, and a wet chemical is utilized to remove the
intergraded layer.
Inventors: |
Hwang; Jeng-Huey; (Hsin-Chu,
TW) ; Shiau; Wei-Tsun; (Kao-Hsiung Hsien, TW)
; Lin; Chien-Ting; (Hsin-Chu City, TW) ; Hwang;
Jiunn-Ren; (Hsin-Chu City, TW) |
Correspondence
Address: |
NORTH AMERICA INTELLECTUAL PROPERTY CORPORATION
P.O. BOX 506
MERRIFIELD
VA
22116
US
|
Family ID: |
35657768 |
Appl. No.: |
11/624703 |
Filed: |
January 19, 2007 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
11160629 |
Jun 30, 2005 |
7186657 |
|
|
11624703 |
Jan 19, 2007 |
|
|
|
10710581 |
Jul 22, 2004 |
|
|
|
11160629 |
Jun 30, 2005 |
|
|
|
Current U.S.
Class: |
438/216 ;
257/E21.251; 257/E21.253; 257/E21.625; 257/E21.628; 257/E29.255;
438/785 |
Current CPC
Class: |
H01L 21/31122 20130101;
H01L 21/823481 20130101; H01L 29/78 20130101; H01L 21/31116
20130101; H01L 21/31111 20130101; H01L 21/823462 20130101; Y10S
438/906 20130101; H01L 29/517 20130101 |
Class at
Publication: |
438/216 ;
438/785 |
International
Class: |
H01L 21/8238 20060101
H01L021/8238; H01L 21/31 20060101 H01L021/31 |
Claims
1. A method for patterning an HfO2-containing gate dielectric, the
method comprising: providing a wafer having a trench, a STI layer
formed in the trench, the HfO2-containing gate dielectric covering
the wafer and the STI layer, a gate electrode formed on the
HfO2-containing gate dielectric, and at least a spacer formed
beside the gate electrode; performing an ion bombardment with Ar,
He, O2, CHF3or mixture thereof to convert the exposed
HfO2-containing gate dielectric to an intergraded layer having a
higher etching selectivity than HfO2; and utilizing a wet chemical
to remove the intergraded layer.
2. The method of claim 1 wherein the STI layer comprises SiO2.
3. The method of claim 1 wherein the spacer comprises SiO2.
4. The method of claim 1 wherein the gate electrode comprises TaN
or TiN.
5. The method of claim 1 wherein the method comprises utilizing a
nitrogen gas or a nitrogen-contained gas to perform the ion
bombardment.
6. The method of claim 1 wherein the intergraded layer is removed
at temperature between 50.degree. C. and 300.degree. C.
7. A method for etching an HfO2-containing dielectric, the method
comprising: providing a wafer having the HfO2-containing
dielectric; performing an ion bombardment with Ar, He, O2, CHF3or
mixture thereof to convert portions of the HfO2-containing
dielectric to an intergraded layer; and utilizing a wet chemical to
remove the intergraded layer.
8. The method of claim 7 wherein the method comprises utilizing a
nitrogen gas or a nitrogen-contained gas to perform the ion
bombardment.
9. The method of claim 7 wherein the intergraded layer is removed
at temperature between 50.degree. C. and 300.degree. C.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This is a continuation application of U.S. patent
application Ser. No. 11/160,629, filed Jun. 30, 2005, which itself
is a divisional of application Ser. No. 10/710,581 filed Jul. 22,
2004.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The invention relates to a method for patterning an
HfO2-containing dielectric, and more particularly, to a method for
patterning an HfO2-containing gate dielectric without damaging STI
positioned on the same wafer.
[0004] 2. Description of the Prior Art
[0005] For realizing the low power MOS transistor at the 65 nm node
and beyond, it is necessary to reduce the gate leakage current for
thinner gate dielectrics. The introduction of high-k gate material
would be advantageous for extending current MOS technology. After
several years of work, many research groups are now focusing on
hafnium (Hf) based material and are evaluating the natural of these
materials extensively. Among the considerable Hf-based materials,
HfO2 is often evaluated to be combined into a metal gate
structure.
[0006] However, HfO2-containing dielectric (including HfO2, HfSiO,
HfSiON, HfAIO, and so on) is known for more difficult to be pattern
etched comparing to SiO2 based dielectric. The conventional method
of etching the HfO2-containing dielectric involves using a strong
acid, such as 49% HF solution. When using the 49% HF solution to
etch the HfO2-containing dielectric, a SiO2 layer, such as a
shallow trench isolation (STI) layer, will be also removed.
Furthermore, the etching rate of the SiO2 layer is much higher than
that of the HfO2-containing dielectric, and the SiO2 layer will be
seriously damaged while patterning the HfO2-containing
dielectric.
[0007] Another conventional method of etching the HfO2-containing
dielectric is using a high insert gas plasma with more than 60% Ar.
The insert gas plasma has no selectivity while etching, and may
also result in the SiO2 layer being damaged during over-etch.
[0008] Please refer to FIGS. 1 and 2, which show a conventional
etching process of the HfO2-containing dielectric. An STI layer 18
is formed on a wafer 10, and an HfO2-containing gate dielectric 12
covers the wafer 10 and the STI layer 18. A gate electrode 16 is
formed on the HfO2-containing gate dielectric 12, and two spacers
14 are formed beside the gate electrode 16. As shown in FIG. 2, the
conventional etching process such as using the strong acid or the
insert gas plasma is performed to remove portions of the
HfO2-containing gate dielectric 12. The etching selectively between
the HfO2-containing gate dielectric 12 and the STI layer 18 is too
low to bring serious damages atop the STI layer 18. As a result,
the isolation effect of the STI layer 18 is reduced.
SUMMARY OF THE INVENTION
[0009] It is therefore a primary objective of the claimed invention
to provide a method for patterning the HfO2-containing gate
dielectric without damaging the SiO2 layer to solve the
above-mentioned problem.
[0010] According to the claimed invention, a method for patterning
an HfO2-containing gate dielectric comprises providing a wafer
having a trench, a STI layer formed in the trench, the
HfO2-containing gate dielectric covering the wafer and the STI
layer, a gate electrode formed on the HfO2-containing gate
dielectric, and at least a spacer formed beside the gate electrode.
Following that, the wafer is preheated and a bromine-rich gas
plasma is provided to remove portions of the HfO2-containing gate
dielectric.
[0011] According to the claimed invention, a method for patterning
an HfO2-containing gate dielectric comprises providing a wafer
having a trench, a STI layer formed in the trench, the
HfO2-containing gate dielectric covering the wafer and the STI
layer, a gate electrode formed on the HfO2-containing gate
dielectric, and at least a spacer formed beside the gate electrode.
Following that, an ion bombardment utilizing Ar, He, O2, CHF3, or
mixture thereof is used to convert the exposed HfO2-containing gate
dielectric to an intergraded layer. A wet chemical is used to
remove the intergraded layer.
[0012] It is an advantage of the claimed invention that the
bromine-rich gas plasma has a high selectivity between the
HfO2-containing dielectric and the SiO2layer, so that the
HfO2-containing dielectric can be etched without damaging the
SiO2layer.
[0013] It is another advantage of the claimed invention that the
nitrogen ion bombardment can convert the HfO2-containing dielectric
to the Hf3N4 layer and the wet chemical has a high selectivity
between the Hf3N4 and SiO2layers, so that the HfO2-containing
dielectric can be etched without damaging the SiO2layers.
[0014] These and other objectives of the present invention will no
doubt become obvious to those of ordinary skill in the art after
reading the following detailed description of the preferred
embodiment that is illustrated in the various figures and
drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 is a schematic diagram of a wafer before performing a
gate dielectric patterning process thereon according to the prior
art;
[0016] FIG. 2 is a schematic diagram of a wafer after performing a
gate dielectric patterning process thereon according to the prior
art;
[0017] FIG. 3 is a schematic diagram of a wafer after performing a
gate dielectric patterning process thereon according to the present
invention; and
[0018] FIG. 4 is a schematic diagram of a wafer after performing a
gate dielectric patterning process thereon according to a second
embodiment of the present invention.
DETAILED DESCRIPTION
[0019] Please refer to FIG. 3, which shows a result of performing a
patterning process according to a first embodiment of the present
invention. In the first embodiment of the present invention, a
bromine-rich gas plasma is utilized to accomplish the requirement
of etching the HfO2-containing dielectric with a high selectivity.
In this embodiment, a MOS transistor fabrication is used to explain
the present invention. Before the etching process, the
half-manufactured wafer is similar to that of the prior art as
shown in FIG. 1. For example, the STI layer 18 is formed on the
wafer 10, and the HfO2-containing gate dielectric 12 covers the
wafer 10 and the STI layer 18. The gate electrode 16 is formed on
the HfO2-containing gate dielectric 12, and two spacers 14 are
formed beside the gate electrode 16. The STI layer 18 and the
spacer 14 may be formed of SiO2, and the gate electrode 16 may be
formed of TaN or TiN.
[0020] Then, the wafer 10 is placed into a reactor and is preheated
to 200.degree. C. or over 200.degree. C. The reactor can be any
type of plasma reactors, such as the parallel plate, the reactive
ion etcher (RIE), the inductively coupled plasma (ICP), or the
electron cyclotron resonance etcher (ECR), and the preheating
procedure can utilize a lamp tray or a non-reactive gas plasma to
preheat the wafer 10.
[0021] After the wafer 10 is preheated to 200.degree. C. or over
200.degree. C., the bromine-rich gas plasma is supplied into the
reactor to remove portions of the HfO2-containing gate dielectric
12. The bromine-rich gas plasma can be a Br2 plasma, a HBr plasma,
or a mixture of a Br2 plasma and a HBr plasma, and concentration of
the bromine-rich gas plasma is higher than 30%. On the wafer
surface, the bromine-rich gas plasma will react with the
HfO2-containing gate dielectric 12 and produce a volatile product
HfBr4. At the elevated temperature (.gtoreq.200.degree. C.), HfBr4
is volatile and can be taken out by the pumping system. After
removing portions of the HfO2-containing gate dielectric 12, the
STI layer 18 is exposed. Since the bromine-rich gas plasma etches
the SiO2material of the STI layer 18 much slower than the
HfO2-containing gate dielectric 12, the STI layer 18 will be almost
undamaged. In addition, a sacrifice layer (not shown) can be
further formed on the gate electrode 16 before performing the
patterning process to protect the gate electrode 16. The sacrifice
layer may be formed of SiO2.
[0022] Furthermore, in other embodiments of the present invention,
additive gases, such as Ar, N2, He, O2, CHF3, etc., can be
introduced into the reactor to assist uniform etching of the
HfO2-containing gate dielectric 12. It is also worthy of notice
that the present invention is not limited to pattern the
HfO2-containing gate dielectric. The present invention is also
applicable in any etching process relating to pattern
HfO2-containing dielectric. For example, a wafer having an
HfO2-containing dielectric is provided, and the wafer is preheated
to a predetermined temperature. Following that, a bromine-rich gas
plasma is provided to remove portions of the HfO2-containing
dielectric, thus providing a high etching selectivity in etching
HfO2.
[0023] Another embodiment of the present invention is utilizing a
nitrogen ion bombardment to convert the exposed HfO2-containing
dielectric to an Hf3N4 (Hafnium Nitride) layer and then utilizing a
wet chemical, such as phosphoric acid, to remove the Hf3N4 layer.
Please refer to FIG. 4, which shows the patterning process of the
second embodiment. A nitrogen ion bombardment is performed on the
half-manufactured wafer 10, and the exposed HfO2-containing gate
dielectric 12 is converted to an Hf3N4 layer 20. While performing
the nitrogen ion bombardment, a nitrogen gas or a
nitrogen-contained gas can be used to produce the nitrogen ions.
The regions covered by the gate electrode 16 and the spacers 14 are
protected and retain the HfO2-containing material. Selectively, a
sacrifice layer (not shown) can be also formed on the gate
electrode 1 6 before performing the nitrogen ion bombardment to
protect the gate electrode 16.
[0024] After the nitrogen ion bombardment, the Hf3N4 layers 20 are
formed beside the portion of HfO2-containing gate dielectrics 12
under the gate electrode 16 and the spacers 14. The Hf3N4 layers 20
are easily etched by the phosphoric acid. In this embodiment, a
H3PO4 solution is utilized to remove the Hf3N4 layers 20, but the
H3PO4 solution etches neither the SiO2layer nor the Si layer. The
STI layers 18 will be almost undamaged after the Hf3N4 layers 20 is
removed. In addition, for speeding the removing process, the H3PO4
solution can be maintained at the temperature 50.degree.
C.-300.degree. C. It is also worthy of notice that the present
invention is not limited to pattern the HfO2-containing gate
dielectric. The present invention is also applicable in any etching
process relating to pattern HfO2-containing dielectric. For
example, a wafer having an HfO2-containing dielectric is provided,
and a nitrogen ion bombardment is used to convert portions of the
HfO2-containing dielectric to an Hf3N4 layer. Following that, a wet
chemical such as phosphoric acid is used to remove the Hf3N4 layer,
thus providing a high etching selectivity in etching HfO2.
[0025] In contrast to the prior art, the present invention has a
high etching selectivity between the HfO2-containing material and
the SiO2material, so that the STI layer can be retained complete
after the gate dielectric is removed.
[0026] Those skilled in the art will readily observe that numerous
modifications and alterations of the device and method may be made
while retaining the teachings of the invention. Accordingly, the
above disclosure should be construed as limited only by the metes
and bounds of the appended claims.
* * * * *