U.S. patent application number 11/192997 was filed with the patent office on 2007-02-08 for chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same.
Invention is credited to Virinder Grewal, Ajay Kumar, Wai-Fan Yau.
Application Number | 20070031609 11/192997 |
Document ID | / |
Family ID | 37198983 |
Filed Date | 2007-02-08 |
United States Patent
Application |
20070031609 |
Kind Code |
A1 |
Kumar; Ajay ; et
al. |
February 8, 2007 |
Chemical vapor deposition chamber with dual frequency bias and
method for manufacturing a photomask using the same
Abstract
A method and apparatus for process integration in manufacture of
a photomask are disclosed. In one embodiment, a cluster tool
suitable for process integration in manufacture of a photomask
including a vacuum transfer chamber having coupled thereto at least
one hard mask deposition chamber and at least one plasma chamber
configured for etching chromium. In another embodiment, a method
for process integration in manufacture of a photomask includes
depositing a hard mask on a substrate in a first processing
chamber, depositing a resist layer on the substrate, patterning the
resist layer, etching the hard mask through apertures formed in the
patterned resist layer in a second chamber; and etching a chromium
layer through apertures formed in the hard mask in a third
chamber.
Inventors: |
Kumar; Ajay; (Cupertino,
CA) ; Grewal; Virinder; (Ebersberg, DE) ; Yau;
Wai-Fan; (Los Altos, CA) |
Correspondence
Address: |
PATTERSON & SHERIDAN, LLP
3040 POST OAK BOULEVARD, SUITE 1500
HOUSTON
TX
77056
US
|
Family ID: |
37198983 |
Appl. No.: |
11/192997 |
Filed: |
July 29, 2005 |
Current U.S.
Class: |
427/569 ;
118/300; 118/326; 118/50; 118/723R; 427/294; 427/585; 430/5 |
Current CPC
Class: |
C23C 16/509 20130101;
H01L 21/67069 20130101; H01J 37/321 20130101; H01L 21/67207
20130101; C23C 16/56 20130101; H01J 37/32706 20130101; H01J
37/32082 20130101; H01J 37/32357 20130101 |
Class at
Publication: |
427/569 ;
427/294; 427/585; 118/050; 118/723.00R; 118/300; 118/326 |
International
Class: |
C23C 16/00 20060101
C23C016/00; C23C 14/00 20060101 C23C014/00; B05C 5/00 20060101
B05C005/00; B05D 3/00 20060101 B05D003/00 |
Claims
1. A chemical vapor deposition (CVD) chamber comprising: a chamber
body; a substrate support disposed in an interior volume of the
chamber body; an electrode embedded in the substrate support; a
first RF power source coupled to the electrode; a second RF power
source coupled to the electrode; a showerhead disposed in the
interior volume of the chamber body; and a third RF power source
coupled to the showerhead.
2. The CVD chamber of claim 1, further comprising: a reticle
adapter disposed on the substrate support.
3. The CVD chamber of claim 2, wherein the reticle adapter further
comprises: a cover ring disposed on the substrate support; and a
capture ring disposed on the cover ring and defining a substrate
receiving pocket therewith.
4. The CVD chamber of claim 1, further comprising; a matching
circuit coupled to the first and second RF sources; and a single
feed coupling the matching circuit to the first electrode.
5. The CVD chamber of claim 1, wherein a power applied to the
showerhead is greater than a power applied to the electrode.
6. The CVD chamber of claim 1, wherein the first RF power source is
adapted to provide a higher frequency than the second RF power.
7. A chemical vapor deposition (CVD) comprising: a chamber body; a
showerhead disposed in an interior volume of the chamber body; a
substrate support disposed in the interior volume of the chamber
body; an electrode embedded in the substrate support; a first RF
source for providing a first RF signal coupled to the electrode
through a matching circuit; a second RF source for providing a
second RF signal coupled to the electrode through the matching
circuit; a third RF power source coupled to the showerhead; and a
reticle adapter disposed on the substrate support.
8. The CVD chamber of claim 7, wherein the reticle adapter further
comprises: a cover ring disposed on the substrate support; and a
capture ring disposed on the cover ring and defining a substrate
receiving pocket therewith.
9. The CVD chamber of claim 7, further comprising: a single feed
coupling the matching circuit first and second RF sources to the
first electrode.
10. A method of depositing a hard mask layer, comprising: providing
a substrate on a substrate support disposed in a chemical vapor
deposition chamber, wherein the substrate includes a quartz layer
and a chromium layer; flowing a hard mask precursor gas into the
chemical vapor deposition chamber; a supplying a first RF signal to
an electrode disposed in the substrate support; supplying a second
RF signal to the electrode disposed in the substrate support,
wherein the first and second RF signals have difference
frequencies; and depositing a hard mask layer on the substrate.
11. The method of claim 10 further comprising: coupling a third RF
signal to a showerhead disposed above the substrate support.
12. The method of claim 13, wherein the first and second RF signals
have a combined power less than the third RF signal.
13. The method of claim 12, wherein the third RF signal maintains a
plasma between the substrate support and showerhead.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention generally relates to a method for
photomask fabrication using a hard mask, and to a cluster tool and
method for process integration in manufacturing of a photomask.
[0003] 2. Description of the Related Art
[0004] In the manufacture of integrated circuits (IC), or chips,
patterns representing different layers of the chip are created by a
chip designer. A series of reusable masks, or photomasks, are
created from these patterns in order to transfer the design of each
chip layer onto a semiconductor substrate during the manufacturing
process. Mask pattern generation systems use precision lasers or
electron beams to image the design of each layer of the chip onto a
respective mask. The masks are then used much like photographic
negatives to transfer the circuit patterns for each layer onto a
semiconductor substrate. These layers are built up using a sequence
of processes and translate into the tiny transistors and electrical
circuits that comprise each completed chip. Thus, any defects in
the mask may be transferred to the chip, potentially adversely
affecting performance. Defects that are severe enough may render
the mask completely useless. Typically, a set of 15 to 30 masks is
used to construct a chip and can be used repeatedly.
[0005] A mask is typically a glass or a quartz substrate that has a
layer of chromium on one side. The mask may also contain a layer of
silicon nitride (SiN) doped with molybdenum (Mb). The chromium
layer is covered with an anti-reflective coating and a
photosensitive resist. During a patterning process, the circuit
design is written onto the mask by exposing portions of the resist
to ultraviolet light, making the exposed portions soluble in a
developing solution. The soluble portion of the resist is then
removed, allowing the exposed underlying chromium to be etched. The
etch process removes the chromium and anti-reflective layers from
the mask at locations where the resist was removed, i.e., the
exposed chromium is removed.
[0006] Another mask utilized for patterning is known as a quartz
phase shift mask. The quartz phase shift mask is similar to the
mask described above, except that alternating adjacent areas of
quartz regions exposed through the patterned chromium layer are
etched to a depth about equal to half the wavelength of light which
will be utilized to transfer the circuit patterns to a substrate
during fabrication. Thus, as the light is shown through the quartz
phase shift mask to expose resist disposed on the substrate, the
light impinging in the resist through one opening in the mask is
180 degrees out of phase relative to the light passing through the
immediately adjacent opening. Therefore, light that may be
scattered at the edges of the mask opening is cancelled out by the
180 degree light scattering at the edge of the adjacent opening,
causing a tighter distribution of light in a predefined region of
the resist. The tighter distribution of light facilitates writing
of features having smaller critical dimensions. Similarly, masks
used for chromeless etch lithography also utilize the phase shift
of light passing through quartz portions of two masks to
sequentially image the resist, thereby improving the light
distribution utilized to develop the resist pattern.
[0007] A photoresist etch mask is used during plasma etching of at
least one layer during the fabrication of the photomask. As the
photoresist is slightly etched during the etching process,
dimensional control of the critical dimensions of the photomask
layers being etched suffers. In structures having critical
dimensions in excess of 10 .mu.m, roughness along the edge of an
aperture of the photoresist through which the structure is etched
is not of a magnitude to cause significant concern. However, as
critical dimensions, particularly of the photomask itself, are
reduced below about 5 .mu.m and into the nanometer regime, edge
roughness of photoresist apertures is of a magnitude equal to that
of the critical dimension itself, and thus, even slight variation
is roughness may cause the critical dimensions to become out of
specification. Moreover, since etching using a photoresist mask is
subject to etch bias (enlargement of the resist aperture during
etching), the use of photoresist masks for fabricating critical
dimensions less than about 5 .mu.m is extremely challenging to the
fabricator as these problems result in non-uniformity of the etched
features of the photomask and correspondingly diminishes the
ability to produce features having small critical dimensions using
the mask. As the critical dimensions of mask continue to shrink,
the importance of etch uniformity increases.
[0008] Therefore, there is a need in the art for an improved
process and apparatus for photomask fabrication. To compliment the
improved photomask fabrication process, there is also a need for an
improved cluster tool and method for process integration in
manufacture of photomasks.
[0009] To improve photomask fabrication, an improved etch process
utilizing a masking technique was developed and results in better
dimensional control of features formed in a photomask. In order to
realize the benefits of the improved etch process, the fabrication
process requires additional layers of materials to be deposited and
processed as compared to convention tools utilized in photomask
fabrication. However, as additional tools and the space consumed by
the tools within the FAB greatly increase the cost of ownership, a
system having the capability of performing all of the additional
fabrication steps with minimal financial investment is also
provided.
SUMMARY OF THE INVENTION
[0010] In one embodiment, a photomask fabrication process includes
patterning a hard mask on a filmstack including chromium, etching
the chromium layer through the patterned photomask in a processing
chamber, and removing the hard mask within the processing chamber
in which the chromium layer was etched.
[0011] In other embodiments, a integrated substrate processing
system (e.g., cluster tool) and method for process integration in
manufacture of a photomask are provided. In one embodiment, a
cluster tool suitable for process integration in manufacture of a
photomask includes a vacuum transfer chamber having coupled thereto
at least one hard mask deposition chamber and at least one plasma
chamber configured for etching chromium.
[0012] In another embodiment, a method for process integration in
manufacture of a photomask includes depositing a hard mask on a
substrate in a first processing chamber coupled to a cluster tool,
depositing a resist layer on the substrate, patterning the resist
layer, etching the hard mask through apertures formed in the
patterned resist layer in a second chamber coupled to the cluster
tool, and etching a chromium layer through apertures formed in the
hard mask in a third chamber coupled to the cluster tool. In a
further embodiment of the invention, the hard mask is removed in at
least one of the second or third chambers using a plasma formed
form an oxygen containing gas.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The teachings of the present invention can be readily
understood by considering the following detailed description in
conjunction with the accompanying drawings, in which:
[0014] FIG. 1 depicts a schematic plan view of one embodiment of an
integrated semiconductor substrate processing system (e.g., cluster
tool) suitable for practicing one embodiment of a method for
fabricating a photomask;
[0015] FIG. 2 depicts one embodiment of a flow diagram for a method
of fabricating a photomask in accordance with one embodiment of the
present invention;
[0016] FIGS. 3A-3G depict a series of schematic, partial
cross-sectional views of a film stack fabricated into a photomask
accordance with the method of FIG. 2;
[0017] FIGS. 3H-3J depict a series of schematic, partial
cross-sectional views of a film stack fabricated into a photomask
accordance with a method of FIG. 4;
[0018] FIG. 4 depicts one embodiment of a flow diagram for another
method of fabricating a photomask;
[0019] FIG. 5 depicts a schematic cross sectional view of one
embodiment of a chemical vapor deposition chamber that may be
utilized with the system of FIG. 1;
[0020] FIG. 6 is a perspective view of a substrate support and
reticle adapter of the chemical vapor deposition chamber of FIG.
5;
[0021] FIG. 7 depicts a schematic cross sectional view of one
embodiment of an etch reactor that may be utilized with the system
of FIG. 1; and
[0022] FIG. 8 depicts a schematic cross sectional view of one
embodiment of a ashing reactor that may be utilized with the system
of FIG. 1.
[0023] To facilitate understanding, identical reference numerals
have been used, where possible, to designate identical elements
that are common to the figures. It is contemplated that elements
and features of one embodiment may be beneficially incorporated in
other embodiments without further recitation.
[0024] It is to be noted, however, that the appended drawings
illustrate only exemplary embodiments of this invention and are
therefore not to be considered limiting of its scope, for the
invention may admit to other equally effective embodiments.
DETAILED DESCRIPTION
[0025] Embodiments of the present invention include an improved
process for photomask fabrication, and an improved cluster tool and
method for process integration in manufacture of photomasks. The
photomask fabrication method includes forming an ultra-thin hard
mask upon a film stack that is processed into a photomask. The film
stack generally includes a chromium containing layer and a quartz
layer. The film stack may additionally include a light-attenuating
layer, such as a layer containing molybdenum. In one embodiment,
the hard mask material may be chosen from a material having a high
selectivity to the underlying layer being etched, such as quartz
and/or chromium containing layers. In another embodiment, the hard
mask material may be chosen from a material having an etch rate
comparable to that of the underlying layer to be etched through the
hard mask. As the hard masks of the present invention are not
laterally etched using the chemistries described herein,
dimensional stability of apertures formed in the hard mask enable
photomask structures having critical dimensions in the order of
less than 5 .mu.m and into the nanometer regime to be accurately
fabricated.
[0026] FIG. 1 depicts a schematic plan view of an exemplary
integrated semiconductor substrate processing system (e.g., cluster
tool) 100 suitable for practicing one embodiment of a method for
fabricating a photomask of the present invention. The system 100
illustratively includes a vacuum-tight central transfer chamber
104, an input/output module (e.g., factory interface) 102, and a
system controller 140. In one embodiment, the transfer chamber 104
includes a plurality of processing chambers and at least one load
lock chamber 106 (two are shown in FIG. 1), which are coupled
around a periphery of a central transfer chamber 104.
[0027] The load lock chambers 106 are utilized to transfer
substrates between a substantially atmospheric environment of the
factory interface 102 and a vacuum environment of the transfer
chamber 104. The transfer chamber 104 has a vacuum robot 130
disposed therein configured to transfer substrates between the load
lock chambers 106 and the various process chambers coupled to the
transfer chamber 104.
[0028] The processing chambers coupled to the transfer chamber 104
generally include at least one etch chamber configured to etch a
hard mask, at least one etch chamber configured to etch a chromium
layer, and at least one chemical vapor deposition chamber. In one
embodiment, at least one of the chemical vapor deposition chamber
and the etch chambers, and/or another processing chamber is capable
of performing an ashing process, such as removal of the hard mask
by exposure to a plasma formed from an oxygen containing gas. In
the embodiment depicted in FIG. 1, four processing chambers are
coupled to the transfer chamber 104 and include a first chamber 110
configured to deposit a hard mask material, a second chamber 112
configured to etch the hard mask material, a third chamber 114
configured to etch chromium, and a fourth chamber 116 configured to
remove the hard mask material. Examples of etch chambers and ashing
chambers suitable for use in the invention include TETRA.RTM.,
TETRA.RTM. II, DPS.RTM. II, DPS.RTM. II HT, and AXIOM.TM.
processing chambers available from Applied Materials, Inc. of Santa
Clara, Calif. Exemplary descriptions of respective exemplary
embodiments of the processing chambers 110, 112, 114, 116 are
discussed below with reference to FIGS. 5-7.
[0029] In one embodiment, the factory interface 102 includes a
metrology module 126, at least one docking station to accept at
least one front opening unified pod (FOUP) 108 and at least one
substrate transfer (FI) robot 132. Two FOUPs 108 are shown in the
embodiment depicted in FIG. 1. The metrology module 126 employs at
least one non-destructive measuring technique suitable for
measuring critical dimensions of structures formed on the
substrate. One suitable metrology module that may be adapted to
benefit from the invention optically measures critical dimensions
and is available from Nanometrics, located in Milpitas, Calif. It
is contemplated that other measuring tools suitable for measuring
critical dimensions may be alternatively employed. The FI robot 132
is configured to transfer pre-processed and post-processed
substrates between the FOUPs 108, the metrology module 126, and the
load lock chambers 106, and may be positionable along a track 118
to increase the robots range of motion.
[0030] Alternatively, the metrology module 126 may be coupled
directly to the transfer chamber 104, for example, in place of one
of the processing chambers 110, 112, 114, 116, or to another facet
of the transfer chamber 104. This configuration facilitates
gathering critical dimension data without having to transfer the
substrate out of the vacuum environment. It is also contemplated
that two or more metrology modules 126 may be utilized, and that at
least one metrology module may be positioned in the atmospheric and
vacuum sides of the system 100.
[0031] The system controller 140 is coupled to and controls the
integrated processing system 100. The system controller 140
controls all aspects of operation of the system 100 using a direct
control of chamber and apparatus of the system 100 or,
alternatively, by controlling the computers (or controllers)
associated with these chamber and apparatus. In operation, the
system controller 140 enables data collection, along with
feedforward and/or feedback of data obtained from the metrology
module 126 to optimize the performance of the system 100 and
facilitate holding design tolerances of photomask CDs.
[0032] The system controller 140 generally includes a central
processing unit (CPU) 142, a memory 144, and support circuits 146.
The CPU 142 may be one of any form of a general purpose computer
processor that can be used in an industrial setting. The support
circuits 146 are conventionally coupled to the CPU 142 and may
comprise cache, clock circuits, input/output subsystems, power
supplies, and the like. The software routines, when executed by the
CPU 142, transform the CPU into a specific purpose computer
(controller) 140. The software routines may also be stored and/or
executed by a second controller (not shown) that is located
remotely from the system 100.
[0033] FIG. 2 depicts one embodiment of a flow diagram for a method
200 of fabricating a photomask 320 as shown in FIGS. 3A-G in
accordance with one embodiment of the present invention. The method
200 is generally stored in the memory 144, typically as a software
routine. Although the method 200 of the present invention is
discussed as being implemented as a software routine, some or all
of the method steps that are disclosed therein may be performed in
hardware as well as by the software controller. As such, the
invention may be implemented in software as executed upon a
computer system, in hardware as an application specific integrated
circuit or other type of hardware implementation, or a combination
of software and hardware.
[0034] The method 200 begins at step 202, where a substrate 122 is
transferred from one of the FOUP's 108 to the first process chamber
110 through one of the load lock chambers 106. The substrate 122
generally comprises a film stack 300 of the photomask structure
being fabricated. The film stack 300 includes an optically
transparent silicon based material, such as a quartz (i.e., silicon
dioxide (SiO.sub.2)) layer 302, having an opaque light-shielding
chromium layer 304, known as a photomask material, forming a
patterned mask on the surface of the quartz layer 302. The chromium
layer 304 may be chromium and/or chromium oxynitride. The substrate
122 may also include an attenuating layer 306 (shown in phantom),
such as silicon nitride (SiN) doped with molybdenum (Mo) or
molybdenum silicon (MoSi), interposed between the quartz layer 302
and chromium layer 304, as shown in FIG. 3A.
[0035] At step 204, a hard mask layer 306 is deposited on the
substrate 122 utilizing a chemical vapor depositing process
performed in the first processing chamber 110, as shown in FIG. 3B.
The hard mask layer 306 has a thickness of, but not limited to,
about 50 .ANG. to about 1000 .ANG.. The hard mask layer 306 may be
chrome oxynitride, silicon oxynitride, silicon-rich oxide,
silicon-rich nitride, silicon-rich oxy-nitride, titanium nitride,
molybdenum silicide, and silicon carbide, including: SiC; SiCH;
SiCOH; SiCNH; SiCONH; diamond-like carbon, carbon, tungsten,
SiO.sub.2, and Si.sub.3N.sub.4, among other suitable materials. The
hard mask layer 306 may also be a high-temperature inorganic carbon
material, referred to as .alpha.-carbon. One process for depositing
.alpha.-carbon material is available from Applied Materials, Inc.
under the trade name Advanced Patterning Film (APF.TM.). Another
.alpha.-carbon material is disclosed in commonly assigned U.S.
patent application Ser. No. 09/590,322, filed Jun. 8, 2000, which
is incorporated by reference in it entirety. The .alpha.-carbon
material may be further doped with nitrogen (N.sub.2) to improve
the etch selectivity of the .alpha.-carbon material versus other
materials used in the film stack 300.
[0036] In one embodiment, hard mask layer 306 is deposited by
heating a gas mixture comprising one or more hydrocarbon compounds
and an inert gas to thermally decompose the one or more hydrocarbon
compounds in the gas mixture to form an amorphous carbon layer.
Suitable hydrocarbon compounds include gases having the general
formula C.sub.xH.sub.y, wherein x has a range of 2 to 4 and y has a
range of 2 to 10. The gas mixture may be heated to a temperature
between about 100 to about 700.degree. C. During deposition, a bias
power may be configured to engineer the stress of the deposited
material to improve adhesion of the hard mask layer 306 to the
underlying film. Particularly, as the critical dimensions of the
photomask approach the 45 nm range, poor adherence of the hard mask
layer 306 which promotes etch bias will result in unacceptable
transfer of CDs from the masking materials to the photomask.
[0037] In one embodiment, bias power at different frequencies
supplied from two power sources may be provided during deposition
to engineer the stress of the deposited material, thereby improving
the adhesion of the hard mask layer 306 to the underlying film.
Particularly, as the critical dimensions of the photomask approach
the 45 nm range, poor adherence of the hard mask layer 306 which
promotes etch bias will result in unacceptable transfer of CDs from
the masking materials to the photomask. For example, a total bias
power of up to about 1000 Watts may be provided in a frequency
range between about 2 to about 27 MHz. The ratio of power between
the higher frequency power source and the lower frequency power
source may range from 100 percent to about zero percent, and from
about zero percent to about 100 percent. It is also contemplated
that the frequency may be tuned to higher and/or lower frequencies,
depending on the film stack composition, the hard mask material to
be deposited, and the desired stress level in the deposited hard
mask film.
[0038] In one embodiment, the hard mask layer 306 may include a
dielectric anti-reflective coating (DARC) layer is used to control
the reflection of light during a lithographic patterning process.
Typically, the DARC layer comprises silicon dioxide (SiO.sub.2),
silicon oxynitride (SiON), silicon nitride (Si.sub.3N.sub.4), and
the like. In one illustrative embodiment, a hard mask layer
includes .alpha.-carbon film and a DARC layer having a combined
thickness of about 1800 Angstroms.
[0039] At step 206, the substrate 122 having the hard mask layer
306 disposed thereon is removed from the first processing chamber
110 and transferred back through one of the load lock chambers 106
to one of the FOUP's 108. At step 208, the substrate 122 is removed
from the system 100 to have a patterned photoresist mask 308 formed
on the hard mask layer 306, as commonly known in the art. At step
210, the substrate 122 having the patterned photoresist mask 308
disposed thereon is returned to the system 100, as shown in Figure
C.
[0040] Optionally, the substrate 122 having the patterned
photoresist mask 308 disposed thereon may be transferred from the
FOUP 108 to the metrology module 126, at step 212. In the metrology
module 126, the dimensions of structures defining the photoresist
mask 308 are measured at step 214. To perform the measurements, the
measuring tool may use at least non-destructive optical measuring
techniques, such as spectroscopy, interferometry, scatterometry,
reflectometry, ellipsometry, and the like. The measured dimensions
may include topographic dimensions, critical dimensions (CDs),
thickness, profile angle, and the like. The term "critical
dimensions" refers herein to the minimal widths of the structure of
the patterned mask 308 that define the apertures through which the
hard mask layer 306 will be etched. The measurements may be
performed on each substrate of a batch of the substrates, as well
as with pre-defined periodicity. In one embodiment, the metrology
module 126 obtains critical dimension measurements of the
photoresist mask 308 on each substrate 122. The measurements may be
performed in a plurality of regions of the substrate to obtain a
statistically valid average CD measurement. The results of these
measurements may be used in the integrated semiconductor substrate
processing system to determine the recipe of a trimming process, or
may be used as feedback information for modifying the photoresist
mask forming process, may be used as feedforwad information for
modifying the chromium etching process, for monitoring the process
performance, quality control, or for other use. Examples of methods
for controlling dimensions of the etched features using the
pre-trim measurements of the photoresist patterned masks are
disclosed in commonly assigned U.S. patent application Ser. No.
10/428,145, filed May 1, 2003 and U.S. patent application Ser. No.
10/666,317, filed Sep. 19, 2003, which are herein incorporated by
reference in there entireties. It is contemplated that CD
measurements may be taken and used as described above after any of
the etching steps described herein.
[0041] At step 216, the substrate 122 having the patterned
photoresist mask 308 disposed thereon is transferred from the FOUP
108 (or metrology module 126) to the second process chamber 112
through one of the load lock chambers 106. At step 218, the hard
mask layer 306 is etched using the patterned photoresist mask 308
layer as an etch mask, as shown in FIG. 3D.
[0042] In one embodiment wherein the hard mask layer 306 is formed
from SiON, the hard mask layer 306 may be etched by providing
tetrafluoride (CF.sub.4) at a rate of 20 to 200 sccm, argon (Ar) at
a rate of 20 to 200 sccm (i.e., a CF.sub.4:Ar flow ratio ranging
from 1:10 to 10:1), applying power to an inductively coupled
antenna between 200 to 1500 W, applying a cathode bias power
between 20 and 150 W, and maintaining a wafer temperature between
50 and 200 degrees Celsius at a pressure in the process chamber
between 2 and 20 mTorr. One process recipe provides CF.sub.4 at a
rate of 120 sccm, Ar at a rate of 120 sccm (i.e., a CF.sub.4:Ar
flow ratio of about 1:1), applies 360 W of power to the antenna, 60
W of a bias power, maintains a wafer temperature of 80 degrees
Celsius, and maintains a pressure of 4 mTorr.
[0043] In another embodiment wherein the hard mask layer 306 is
formed from a carbon-based material, the hard mask layer 306 may be
etched by providing hydrogen bromide (HBr) at a rate of 20 to 200
sccm, oxygen (O.sub.2) at a rate of 10 to 40 sccm (i.e., a
HBr:O.sub.2 flow ratio ranging from 1:2 to 20:1), and argon (Ar) at
a rate of 20 to 200 sccm, applying power to an inductively coupled
antenna between 200 to 1500 W, applying a cathode bias power
between 50 and 200 W, and maintaining a wafer temperature between
50 and 200 degrees Celsius at a pressure in the process chamber
between 2 and 20 mTorr. One process recipe provides HBr at a rate
of 60 sccm, O.sub.2 at a rate of 26 sccm, (i.e., a HBr:O.sub.2 flow
ratio of about 2.3:1), and Ar at a rate of 60 sccm, applies 600 W
of power to the antenna, 60 W of a bias power, maintains a wafer
temperature of 80 degrees Celsius, and maintains a pressure of 4
mTorr.
[0044] At optional step 220, the photoresist mask 308 is removed
from the hard mask layer 306, as shown in FIG. 3E. In one
embodiment, the photoresist mask 308 may be removed contemporarily
with the etching of the hard mask layer 306 at step 218. In another
embodiment, the photoresist mask 308 may be removed in-situ the
second processing chamber 112 in that the hard mask etching step
218 was performed. For example, a photoresist mask 308 may be
removed in-situ the hard mask etch chamber by exposure to an oxygen
containing plasma. In another embodiment, the photoresist mask 308
may be removed in the fourth processing chamber 116 configured as a
stripping chamber that provides a plasma containing oxygen, which
may be formed with in the processing chamber or provided by a
remote plasma source.
[0045] The photoresist mask 308 may alternatively be left on the
film stack 300. The photoresist mask 308 will eventually be
consumed during subsequent etch processes, or be removed with the
patterned hard mask layer 306 at step 226 as described below.
[0046] At step 222, the substrate 112 is transferred from the
second processing chamber 112 to the third processing chamber 114
wherein the chromium layer 304 is etched using the patterned hard
mask layer 306 as an etch mask, at step 224. FIG. 3F depicts the
film stack 300 with the chromium layer 304 etched. In one
embodiment, the etch step 224 utilizes a plasma formed from one or
more halogen containing process gases introduced into the process
chamber 114. Exemplary process gases may include one or more of a
fluorocarbon gas, Cl.sub.2, HBr, HCl, CF.sub.4 and CHF.sub.3, among
others. The processing gas may also include O.sub.2. The processing
gas may further include an inert gas, such as He, Ar, Xe, Ne, and
Kr.
[0047] In another embodiment, the chromium layer 304 is etched at
step 224 by providing CF.sub.4 at a rate of 2 to 50 standard cubic
centimeters per minute (sccm) and CFH.sub.3 at a rate of 10 to 50
sccm. One specific process recipe provides CF.sub.4 at a rate of 9
sccm, CHF.sub.3 at a rate of 26 sccm. The pressure in the process
chamber is controlled to less than about 40 mTorr, and in one
embodiment, between about 1.5 and about 15 mTorr.
[0048] In another embodiment of the chromium etch step 224, a
pulsed bias power of less than about 600 W is applied to the
support pedestal 124 to bias the substrate 122. In a first example,
the substrate 112 is biased with a pulsed RF power of less than
about 150 W, and in a second example, the substrate 112 is biased
with a pulsed RF of about 10 W. The bias power may be pulsed with a
frequency and duty cycle as described above, for example, with a
frequency in the range of about 1 to about 10 kHz, and with a duty
cycle between about 10 to about 95 percent. The pulsed bias power
may be DC and/or RF. In another embodiment, the biasing source 140
is provides pulsed RF power between about 10 to about 150 W, at a
frequency between about 2 to about 5 kHz, with a duty cycle between
about 80 to about 95 percent. In yet another embodiment, the
biasing source provides a pulsed RF power of about 10 W.
[0049] During step 224, plasma, formed from the process gases, is
maintained by applying RF power of between about 250 to about 600 W
from the plasma power source 112 to the antenna 110. It is
contemplated that the plasma may be ignited by any number of
methods.
[0050] The chromium layer 304 exposed on the substrate 122 through
the patterned hard mask layer 306 is etched until an endpoint is
reached. The endpoint may be determined by time, optical
interferometry, chamber gas emission spectrography or by other
suitable methods.
[0051] At step 226, the hard mask layer 306 is removed to form a
photomask 320. In one embodiment, the hard mask layer 306 may be
removed contemporarily with the etching of the chromium layer 304
at step 242. For example, a hard mask layer 306 fabricated from
SiON will be etched at a rate close to the rate of the chromium
layer. Thus, by depositing the SiON hard mask layer to a thickness
equal to or slightly greater than a thickness of the chromium
layer, substantially all of the SiON hard mask layer will be
removed while etching the chromium layer. A short overetch period
may be required to clear the remaining hard mask layer 306.
[0052] In another embodiment, the hard mask layer 306 may be
removed in-situ the third processing chamber 114 in which the
etching step 224 was performed. For example, a hard mask layer 306
fabricated from a carbon material may be removed by exposure to an
oxygen containing plasma in-situ the third chamber 114 following
the chromium layer etch.
[0053] In another embodiment, the hard mask layer 306 may be
removed in the fourth processing chamber 116 after a transfer step
228. In this embodiment, the fourth processing chamber 116 may be
configured as a stripping chamber that provide a plasma containing
oxygen, which may be formed within the processing chamber or
provided by a remote plasma source.
[0054] In an embodiment having an .alpha.-carbon hard mask layer
308, the hard mask layer 308 may be removed (or stripped) from the
film stack 300 using plasma containing oxygen. In another
embodiment, an .alpha.-carbon hard mask layer 308 is removed using
a plasma formed from hydrogen bromide and oxygen. A HBr:O.sub.2
flow ratio may range between about 1:10 to 10:1. Argon may also be
present in the plasma. In another embodiment, the plasma is
energized with a source power of 200 to 1000 W and a bias power of
0 to 300 W, while the temperature of the substrate is maintained
between about 20 to about 80 degrees Celsius. Alternatively, a
plasma formed from hydrogen (H.sub.2) or a mixture of oxygen and a
diluent gas such as argon (Ar) may be used to removed the
.alpha.-carbon film hard mask layer 308.
[0055] After the hard mask removal step 226, the substrate 122 (now
fabricated into the photomask 320) is transferred through the load
lock chamber 106 to the factory interface 102 at step 230. In the
factory interface 102, the substrate 122 is loaded into one of the
FOUP's 108 at step 234, or into the metrology module 126 at an
optional step 232.
[0056] In the metrology module 126 the critical dimensions CDs of
the photomask 320 may be measured. CD measurement information may
be utilized as a feedback to modify photoresist patterning on
incoming substrates for photomask processing, as a feed forward to
modify etching and/or lithographic processing on production
substrates that utilize the photomask 320, and/or to monitor
quality and/or process control, among others. After the metrology
step 232, the substrate is loaded into one of the FOUP's 108 at
step 232.
[0057] Optionally, the substrate 112 may be further processed as
illustrated in the flow diagram of FIG. 4 that depicts one
embodiment of a method 400 of fabricating a phase shift photomask
340 as shown in FIGS. 3G-J in accordance with aother embodiment of
the present invention. The method 400 may begin after hard mask
stripping step 222 or the metrology step 230 of the sequence
described in the method 200 above.
[0058] The method 400 begins step 402 by transferring the substrate
to one of the FOUP's 108. At step 404, the substrate 122 is removed
from the system 100 to have a second patterned photoresist mask 320
formed on the film stack 300 as shown in FIG. 3H. At step 406, the
substrate 122 having the patterned photoresist mask 320 disposed
thereon is returned to the system 100.
[0059] Optionally, the substrate 122 having the patterned
photoresist mask 320 disposed thereon may be transferred from the
FOUP 108 to the metrology module 126, at step 408. In the metrology
module 126, the dimensions of structures defining the photoresist
mask 320 are measured at step 410. CD measurements of the
photoresist mask 320 may be taken and utilized as described
above.
[0060] At step 412, the substrate 122 having the patterned
photoresist mask 320 disposed thereon is transferred from the FOUP
108 (or metrology module 126) to the one of the process chamber
112, 114, 116 through one of the load lock chambers 106. At step
414, the quartz layer 302 is etched using the patterned photoresist
mask 320 layer as an etch mask.
[0061] In one embodiment, the etch step 414 utilizes a plasma
formed from one or more fluorinated process gases. Exemplary
process gases may include CF.sub.4 and CHF.sub.3, among others. The
processing gas may further include an inert gas, such as He, Ar,
Xe, Ne, and Kr. During etching of the quartz layer 302, the bias
power applied to the substrate may be pulsed as described
above.
[0062] The endpoint of the quartz etch step 414 is selected such
that a depth 330 of an etched quartz trench 322 illustrated in FIG.
31 is about equal to the length of 180 degrees phase shift through
the quartz layer 302 for a predefined wavelength of light intended
for use with the quartz phase shift mask. Typical wavelengths are
193 and 248 nm. Thus, the depth 322 is typically about either 172
or 240 nm, although other depths may be utilized for masks intended
for use with different lithographic light wavelengths. After the
quartz trench 322 is etched at step 414, the photoresist mask 320
is removed at step 416, for example, by ashing, such that the
remaining film stack 300 forms a quartz phase shift mask 320 as
shown in FIG. 3J.
[0063] After the photoresist mask removal step 416, the substrate
122 (now fabricated into the photomask 340) is transferred through
the load lock chamber 106 to the factory interface 102 at step 418.
In the factory interface 102, the substrate 122 is loaded into one
of the FOUP's 108 at step 424, or into the metrology module 422 at
an optional step 230.
[0064] In the metrology module 126 the critical dimensions CDs of
the photomask 340 may be measured. CD measurement information may
be utilized as a feedback to modify photoresist patterning on
incoming substrates for photomask processing, as a feed forward to
modify etching and/or lithographic processing on production
substrates that utilize the photomask 340, and/or to monitor
quality and/or process control, among others. After the metrology
step 226, the substrate is loaded into one of the FOUP's 108 at
step 232.
[0065] FIG. 5 depicts a chemical vapor deposition chamber 500 that
may be utilized as the first processing chamber 110 in the system
100 of FIG. 1. The chamber 500 coupled to a chamber body 502 having
a substrate support 518 disposed within a processing region
512.
[0066] The exemplary chamber body 502 generally includes a lid 506,
a bottom 508 and sidewalls 510. An exhaust port 546 disposed
through the chamber body 502 and couples the processing region 512
to a pumping system 530. Typically, the exhaust port 546 is
disposed through the bottom 508 of the chamber body 502, but may be
located in other portions of the chamber body 502. The pumping
system 530 generally includes a throttle valve and vacuum pump
(both not shown) utilized to evacuate interior region 512 of the
chamber body 502, remove deposition by-products and control the
pressure within the chamber body 502.
[0067] A showerhead 520 is coupled to the lid 506 to provide
uniform distribution of gas provided from a gas panel 526 to the
processing region 512 of the chamber body 502. In one embodiment
for depositing a carbon containing head mask layer, the gas panel
526 provided one or more hydrocarbon compounds, or derivatives
thereof, to the processing chamber 500. Additionally, oxygen
containing and/or fluorine containing compounds may be used. The
hydrocarbon compounds may optionally contain nitrogen or be
deposited with a nitrogen-containing gas, such as ammonia. Also,
the hydrocarbon compounds may have substituents such as fluorine
and oxygen. One hydrocarbon compound or its derivative that may be
utilized has a formula C.sub.AH.sub.BO.sub.CF.sub.D, where A has a
range of between 1 and 24, B has a range of between 0 and 50, C has
a range of 0 to 10, D has a range of 0 to 50, and the sum of B and
D is at least 2.
[0068] The showerhead 520 is coupled to an RF power source 522 and
matching circuit 524. The power source 522 is generally capable of
producing an RF signal having a frequency in the about 50 kHz to
about 13.56 MHz range and a power up to about 10,000 Watts. In one
embodiment, the source 522 produces an RF signal coupled to the
showerhead 520 at a frequency of about 13.56 MHz 100 at a power of
about 600 W.
[0069] The substrate pedestal (cathode) 124 is coupled through a
second matching network 142 to a biasing power source 140. The
biasing source 140 provides a signal having a frequency of between
about 50 kHz to about 100 MHz and a power of between about 0 and
about 10,000 Watts. The RF energy, supplied by the source 522 to
the showerhead 520, is used to facilitate dissociation and
ionization of gases in the plasma, which generally facilitates
lower processing temperatures with increased deposition rates. A
dielectric isolator 538 is disposed between the showerhead 520 and
the lid 506 of the chamber body 502 to electrically isolate the RF
hot showerhead 520 from the chamber body 502. Plasma enhanced
processing also provides additional process flexibility and
provides a capability for the system 500 to be used for varied
types of deposition processes.
[0070] A cleaning agent generator 528 may also be coupled through
the showerhead to the processing region 512. In one embodiment, the
cleaning agent generator 528 provides a cleaning agent, such as
atomic fluorine, that removes unwanted deposition and other
contaminants from the chamber components. One such generator is
available from Azte Corporation.
[0071] The substrate support 518 is disposed in interior region 512
of the chamber body 502. The substrate support 518 includes a
reticle adapter 582 that retains the substrate 122 during
processing, a heating element 544 utilized to thermally control
substrate temperature, and an electrode 590 for biasing the
substrate during processing. The heating element 544 may be a
resistive heater, a fluid conduit for flowing a heat transfer
fluid, a resistive heating element or a thermoelectric device among
other temperature control devices. In one embodiment, the heating
element 544 is a resistive heater coupled to a power source 548 and
is capable of heating and maintaining the substrate 122 at a
temperature of about 100 to about 500 degrees Celsius, and in one
embodiment the substrate temperature is maintain at less than about
450 degrees Celsius.
[0072] The electrode 590 is generally coupled to a pair of RF bias
sources 592, 594 through a matching network 596. The bias sources
592, 594 are generally capable of producing an RF signal having a
frequency of from about 50 kHz to about 27 MHz and a power of
between about 0 and about 1,000 Watts. The matching network 596
matches the impedance of the sources 592, 594 to the plasma
impedance. A single feed 598 couples energy from both sources to
the electrode 590 disposed in the substrate support 518.
Alternatively, each source 592, 594 can be coupled to the electrode
590 via a separate feed.
[0073] The reticle adapter 582 retains the substrate 122 on the
substrate support 518. The reticle adapter 582 may be fabricated
from aluminum or aluminum oxide, or other suitable material.
[0074] FIG. 6 depicts a perspective view of one embodiment of a
reticle adapter 582. The reticle adapter 582 generally includes a
capture ring 602 and a cover ring 604. Together, the capture ring
602 and the cover ring 604 define a substrate receiving pocket
612.
[0075] The cover ring 604 generally covers and protects the upper
surface of the substrate support 518 from deposition. The cover
ring 604 includes a plurality of holes 620 that allow lift pins 608
to selectively project therethrough, thereby lifting the capture
ring 604 from the cover ring 602. The cover ring 602 a raised
alignment feature 610 that functions both the provide one boundary
of the substrate receiving pocket 612 and an alignment feature that
engages the capture ring 602 when the capture ring is in a lower
position.
[0076] The capture ring 602 includes an arcuate base plate 606
having general "C-shape" having an inner edge 614 that defines a
portion of the substrate receiving pocket 612. One or more of
substrate supports, such as support ledges 616, 618 are disposed on
the inner edge 614. The substrate supports ledges 616, 618 allow
the capture ring 602 to lift the substrate 122 from the cover ring
602 when lifted by the lift pins 608. An open end 622 of "C-shape"
base plate 606 facilitates the blade of a robot (not shown) to
exchange the substrate 122 with the raised capture ring 602.
[0077] Returning to FIG. 5, the substrate support 518 is coupled to
a lift mechanism 552 that controls the elevation of the substrate
support 518 relative to the showerhead 520. The substrate support
518 may be lowered by the lift mechanism 552 to facilitate
substrate transfer through substrate access port (not shown)
disposed in the sidewalls 510 of the chamber body 502. Conversely,
the substrate support 518 may be raised towards the showerhead 520
to set a gap (or spacing) between the substrate 122 and the
showerhead 520. Bellows 550 are coupled between the lift mechanism
552 and the chamber bottom 508 to prevent vacuum leakage.
[0078] In operation, the substrate 122 is disposed in the
processing chamber 500 on the substrate support 518. A process gas
is introduced into the chamber body 502 through the showerhead 520
from the gas panel 526. In one embodiment, the RF source 522
provides about 600 Watts of RF voltage at 13.56 MHz to the
showerhead 520, thereby exciting the gas inside the chamber body
502 and forming a plasma 598. The RF bias source 592 is selected to
generate power at a frequency of about 2 MHz and the RF bias source
594 is selected to generate power at a frequency of about 13.56
MHz. The RF bias sources bias sources 592, 594 provide up to about
1,000 Watts of total RF power in a predetermined power ratio from
the bias source 592 to the bias source 594 of between 1:0 and 0:1.
These RF bias sources 592, 594 provide bias power that both
self-biases the substrate and modulates the plasma sheath.
Adjusting the ratio between the bias sources 592, 594 controls the
characteristics of the plasma, which enables the properties of the
deposited film to be engineered. For example, a SiON or carbon
containing hard mask layer may be deposited in a manner that
reduces the stress of the deposited film, thereby improving
adhesion between the hard mask film and an underlying layer, such
as a chromium containing layer. One carbon containing hard mask
layer deposition process that may be adapted to benefit from the
application of dual frequency bias is described in U.S. patent
application Ser. No. 11/065,464, filed Feb. 24, 2005, which is
incorporated by reference in its entirety.
[0079] In one embodiment, the frequencies on the electrode 590 are
selected such that they are of a low enough frequency so as to
provide a strong self-biasing sheath in the plasma discharge above
the powered surface. The first frequency provides a broad ion
energy distribution (i.e., lower frequency). The second frequency
provides a peaked, well defined ion energy distribution (i.e.,
higher frequency). Typically, the first frequency is selected such
that its' cycle time is much larger than the transit time of an ion
in the sheath, while the second frequency is selected such that
it's period approaches or surpasses the transit time of the ion in
the sheath. These frequencies are also selected such that when used
in conjunction with a third power source provided by an
independently driven electrode (e.g., the showerhead 520), they are
not the primary power contributor for plasma ionization and
dissociation.
[0080] The combined applied voltage of the two frequency sources is
used to control the peak-to-peak sheath voltage as well as the
self-biased DC potential that is used for driving the deposition
process. The mixing of the two frequencies is used to tune the
energy distribution about this average acceleration generated by
this DC potential. Thus, utilizing a plasma enhanced processing
chamber with a dual frequency cathode as described above, the ion
energy distribution within the plasma can be controlled in a manner
that enables film properties, such as stress and adherence, to be
engineered by tuning the bias frequency.
[0081] FIG. 7 depicts a schematic diagram of one embodiment of an
etch reactor 700 suitable for use as one of the processing chambers
712, 714, 716. Suitable reactors that may be adapted for use with
the teachings disclosed herein include, for example, the Decoupled
Plasma Source (DPS.RTM.) II reactor, or the Tetra I and Tetra II
Photomask etch systems, all of which are available from Applied
Materials, Inc. of Santa Clara, Calif. The particular embodiment of
the etch reactor 700 shown herein is provided for illustrative
purposes and should not be used to limit the scope of the
invention.
[0082] The etch reactor 700 generally comprises a process chamber
702 having a substrate pedestal 724 within a conductive body (wall)
704, and a controller 746. The chamber 702 has a substantially flat
dielectric ceiling 708. Other modifications of the chamber 702 may
have other types of ceilings, e.g., a dome-shaped ceiling. An
antenna 710 is disposed above the ceiling 708. The antenna 710
comprises one or more inductive coil elements that may be
selectively controlled (two co-axial elements 710a and 710b are
shown in FIG. 7). The antenna 710 is coupled through a first
matching network 714 to a plasma power source 712. The plasma power
source 712 is typically capable of producing up to about 3000 Watts
(W) at a tunable frequency in a range from about 50 kHz to about
13.56 MHz. In one embodiment, the plasma power source 712 provides
about 300 to about 600 W of inductively coupled RF power.
[0083] The substrate pedestal (cathode) 724 is coupled through a
second matching network 742 to a biasing power source 740. The
biasing source 740 provides between about zero to about 600 W at a
tunable pulse frequency in the range of about 1 to about 10 kHz.
The biasing source 740 produces pulsed RF power output.
Alternatively, the biasing source 740 may produce pulsed DC power
output. It is contemplated that the source 740 may also provide a
constant power output.
[0084] In one embodiment, the biasing source 740 is configured to
provide RF power less than about 700 Watts at a frequency between
about 1 to about 10 kHz, with a duty cycle between about 10 to
about 95 percent. In another embodiment, the biasing source 740 is
configured to provide RF power between about 20 to about 150 Watts,
at a frequency between about 2 to about 5 kHz, with a duty cycle
between about 80 to about 95 percent.
[0085] In one embodiment as in a DPS.RTM. II reactor, the substrate
support pedestal 724 may include an electrostatic chuck 760. The
electrostatic chuck 760 comprises at least one clamping electrode
732 and is controlled by a chuck power supply 766. In alternative
embodiments, the substrate pedestal 724 may comprise substrate
retention mechanisms such as a susceptor clamp ring, a mechanical
chuck, and the like.
[0086] A gas panel 720 is coupled to the process chamber 702 to
provide process and/or other gases to the interior of the process
chamber 702. In the embodiment depicted in FIG. 7, the gas panel
720 is coupled to one or more inlets 716 formed in a channel 718 in
the sidewall 704 of the chamber 702. It is contemplated that the
one or more inlets 716 may be provided in other locations, for
example, in the ceiling 708 of the process chamber 702.
[0087] In one embodiment, the gas panel 720 is adapted to provide
fluorinated process gas through the inlets 716 and into the
interior of the process chamber 702. During processing, a plasma is
formed from the process gas and maintained through inductive
coupling of power from the plasma power source 712. The plasma may
alternatively be formed remotely or ignited by other methods. In
one embodiment, the process gas provided from the gas panel 720
includes at least CHF.sub.3 and/or CF.sub.4. Other fluorinated
gases may include one or more of C.sub.2F, C.sub.4F.sub.6,
C.sub.3F.sub.8 and C.sub.5F.sub.8.
[0088] The pressure in the chamber 702 is controlled using a
throttle valve 762 and a vacuum pump 764. The vacuum pump 764 and
throttle valve 762 are capable of maintaining chamber pressures in
the range of about 1 to about 20 mTorr.
[0089] The temperature of the wall 704 may be controlled using
liquid-containing conduits (not shown) that run through the wall
704. Wall temperature is generally maintained at about 65 degrees
Celsius. Typically, the chamber wall 704 is formed from a metal
(e.g., aluminum, stainless steel, and the like) and is coupled to
an electrical ground 706. The process chamber 702 also comprises
conventional systems for process control, internal diagnostic, end
point detection, and the like. Such systems are collectively shown
as support systems 754.
[0090] A reticle adapter 782 is used to secure a substrate (such as
a reticle or other workpiece) 722 onto the substrate support
pedestal 724. The reticle adapter 782 generally includes a lower
portion 784 milled to cover an upper surface of the pedestal 724
(for example, the electrostatic chuck 760) and a top portion 786
having an opening 788 that is sized and shaped to hold the
substrate 722. The opening 788 is generally substantially centered
with respect to the pedestal 724. The adapter 782 is generally
formed from a single piece of etch resistant, high temperature
resistant material such as polyimide ceramic or quartz. A suitable
reticle adapter is disclosed in U.S. Pat. No. 6,251,217, issued on
Jun. 26, 2001, and incorporated herein by reference. An edge ring
726 may cover and/or secure the adapter 782 to the pedestal
724.
[0091] A lift mechanism 738 is used to lower or raise the adapter
782, and hence, the substrate 722, onto or off of the substrate
support pedestal 724. Generally, the lift mechanism 738 comprises a
plurality of lift pins (one lift pin 730 is shown) that travel
through respective guide holes 736.
[0092] In operation, the temperature of the substrate 722 is
controlled by stabilizing the temperature of the substrate pedestal
724. In one embodiment, the substrate support pedestal 724
comprises a heater 744 and an optional heat sink 728. The heater
744 may be one or more fluid conduits configured to flow a heat
transfer fluid therethrough. In another embodiment, the heater 744
may include at least one heating element 734 that is regulated by a
heater power supply 768. Optionally, a backside gas (e.g., helium
(He)) from a gas source 756 is provided via a gas conduit 758 to
channels that are formed in the pedestal surface under the
substrate 722. The backside gas is used to facilitate heat transfer
between the pedestal 724 and the substrate 722. During processing,
the pedestal 724 may be heated by the embedded heater 744 to a
steady-state temperature, which in combination with the helium
backside gas, facilitates uniform heating of the substrate 722.
[0093] FIG. 8 depicts a schematic diagram of an exemplary ashing
reactor 800 of the kind that may be used as a fourth 114 processing
chamber when a dedicated chamber for mask removal is desired. An
example of a suitable ashing reactor is described in detail in U.S.
patent application Ser. No. 10/264,664, filed Oct. 4, 2002
(Attorney Docket No. 6094), which is herein incorporated by
reference. Salient features of the reactor 800 are briefly
described below.
[0094] The reactor 800 reactor comprises a process chamber 802, a
remote plasma source 806, and a controller 808. The process chamber
802 generally is a vacuum vessel, which comprises a first portion
810 and a second portion 812. In one embodiment, the first portion
810 comprises a substrate pedestal 804, a sidewall 816 and a vacuum
pump 814. The second portion 812 comprises a lid 818 and a gas
distribution plate (showerhead) 820, which defines a gas mixing
volume 822 and a reaction volume 824. The lid 818 and sidewall 816
are generally formed from a metal (e.g., aluminum (Al), stainless
steel, and the like) and electrically coupled to a ground reference
860.
[0095] The substrate pedestal 804 supports a substrate (wafer) 826
within the reaction volume 824. In one embodiment, the substrate
pedestal 804 may comprise a source of radiant heat, such as
gas-filled lamps 828, as well as an embedded resistive heater 830
and a conduit 832. The conduit 832 provides a gas (e.g., helium)
from a source 834 to the backside of the wafer 826 through grooves
(not shown) in the wafer support surface of the pedestal 804. The
gas facilitates heat exchange between the support pedestal 804 and
the wafer 826. The temperature of the wafer 826 may be controlled
between about 20 and 400 degrees Celsius.
[0096] The vacuum pump 814 is adapted to an exhaust port 836 formed
in the sidewall 816 of the process chamber 802. The vacuum pump 814
is used to maintain a desired gas pressure in the process chamber
102, as well as evacuate the post-processing gases and other
volatile compounds from the chamber. In one embodiment, the vacuum
pump 814 comprises a throttle valve 838 to control a gas pressure
in the process chamber 802.
[0097] The process chamber 802 also comprises conventional systems
for retaining and releasing the wafer 826, detecting an end of a
process, internal diagnostics, and the like. Such systems are
collectively depicted as support systems 840.
[0098] The remote plasma source 806 comprises a power source 846, a
gas panel 844, and a remote plasma chamber 842. In one embodiment,
the power source 846 comprises a radio-frequency (RF) generator
848, a tuning assembly 850, and an applicator 852. The RF generator
848 is capable of producing of about 200 to 5000 W at a frequency
of about 200 to 700 kHz. The applicator 852 is inductively coupled
to the remote plasma chamber 842 and energizes a process gas (or
gas mixture) 864 to a plasma 862 in the chamber. In this
embodiment, the remote plasma chamber 842 has a toroidal geometry
that confines the plasma and facilitates efficient generation of
radical species, as well as lowers the electron temperature of the
plasma. In other embodiments, the remote plasma source 806 may be a
microwave plasma source, however, the stripping rates are generally
higher using the inductively coupled plasma.
[0099] The gas panel 844 uses a conduit 866 to deliver the process
gas 864 to the remote plasma chamber 842. The gas panel 844 (or
conduit 866) comprises means (not shown), such as mass flow
controllers and shut-off valves, to control gas pressure and flow
rate for each individual gas supplied to the chamber 842. In the
plasma 862, the process gas 864 is ionized and dissociated to form
reactive species.
[0100] The reactive species are directed into the mixing volume 822
through an inlet port 868 in the lid 818. To minimize charge-up
plasma damage to devices on the wafer 826, the ionic species of the
process gas 864 are substantially neutralized within the mixing
volume 822 before the gas reaches the reaction volume 824 through a
plurality of openings 870 in the showerhead 820.
[0101] While the foregoing is directed to the illustrative
embodiment of the present invention, other and further embodiments
of the invention may be devised without departing from the basic
scope thereof, and the scope thereof is determined by the claims
that follow.
* * * * *